Law, 1961 - Google Patents

Surface Electrical Changes Caused by the Adsorption of Hydrogen and Oxygen on Silicon

Law, 1961

Document ID
11264198008907335613
Author
Law J
Publication year
Publication venue
Journal of Applied Physics

External Links

Snippet

Measurements of conductance, lifetime, change in contact potential with light, and contact potential have been carried out on bombardment‐cleaned silicon surfaces and during the adsorption of molecular oxygen and atomic hydrogen. In the case of oxygen adsorption, the …
Continue reading at pubs.aip.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material
    • G01N27/04—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material by investigating resistance
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L47/00—Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof

Similar Documents

Publication Publication Date Title
Bemski Recombination in semiconductors
Hartke Drift mobilities of electrons and holes and space-charge-limited currents in amorphous selenium films
Fiory et al. Superconducting phase transitions in indium/indium-oxide thin-film composites
Van Lint The physics of radiation damage in particle detectors
McGarrity et al. Silicon carbide JFET radiation response
Shockley et al. Mobile electric charges on insulating oxides with application to oxide covered silicon pn junctions
Martini et al. Trapping and detrapping effects in lithium-drifted germanium and silicon detectors
Street et al. Electronic transport in polycrystalline Pbl 2 films
Bardeen Semiconductor research leading to the point contact transistor
Law Surface Electrical Changes Caused by the Adsorption of Hydrogen and Oxygen on Silicon
Elliot Thick junction radiation detectors made by ion drift
Raut et al. Development of low-threshold detectors for low-mass dark matter searches with a p-type germanium detector operated at cryogenic temperature
Mac Rae et al. Surface-Dependent 1 f Noise in Germanium
Bhattarai et al. Development of low-threshold detectors for low-mass dark matter searches using an n-type germanium detector at 5.2 K
Kenny et al. Bias-induced nonlinearities in the dc I-V characteristics of neutron-transmutation-doped germanium at liquid− 4 He temperatures
Gädda et al. Cadmium Telluride X-ray pad detectors with different passivation dielectrics
Walter et al. Large Area Germanium Surface‐Barrier Counters
Watkins 1/f noise in germanium devices
DiMaria Room‐temperature conductivity and location of mobile sodium ions in the thermal silicon dioxide layer of a metal–silicon dioxide–silicon structure
Reddi Majority carrier surface mobilities in thermally oxidized silicon
Tuzzolino et al. Thermal-vacuum behavior of lithium-drifted silicon detectors
Tove The role of contacts to nuclear radiation detectors
Eernisse et al. Electrical effects of clustered defects in heteroepitaxial Si films
US3449177A (en) Radiation detector
Blakemore et al. Semiconductor circuit elements