Viheriälä et al., 2019 - Google Patents

Classifications

• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
  • H01S3/09—Processes or apparatus for excitation, e.g. pumping
  • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
  • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
  • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
  • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
  • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
  • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
  • H01S5/06255—Controlling the frequency of the radiation
  • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
  • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
  • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
  • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/18—Surface-emitting lasers (SE-lasers)
  • H01S5/183—Surface-emitting lasers (SE-lasers) having a vertical cavity (VCSE-lasers)
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
  • H01S5/042—Electrical excitation; Circuits therefor
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
  • H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
  • H01S3/06—Construction or shape of active medium
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
  • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/005—Optical devices external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/20—Structure or shape of the semi-conductor body to guide the optical wave; Confining structures perpendicular to the optical axis, e.g. index- or gain-guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
  • H01S5/2004—Confining in the direction perpendicular to the layer structure
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
  • H01S3/14—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves characterised by the material used as the active medium
  • H01S3/16—Solid materials
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S2301/00—Functional characteristics

Similar Documents