WO2024058087A1 - Dispositif laser à semi-conducteur - Google Patents

Dispositif laser à semi-conducteur Download PDF

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Publication number
WO2024058087A1
WO2024058087A1 PCT/JP2023/032956 JP2023032956W WO2024058087A1 WO 2024058087 A1 WO2024058087 A1 WO 2024058087A1 JP 2023032956 W JP2023032956 W JP 2023032956W WO 2024058087 A1 WO2024058087 A1 WO 2024058087A1
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WIPO (PCT)
Prior art keywords
semiconductor laser
substrate
wiring
axis direction
laser device
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PCT/JP2023/032956
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English (en)
Japanese (ja)
Inventor
智一郎 外山
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ローム株式会社
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Publication of WO2024058087A1 publication Critical patent/WO2024058087A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin

Definitions

  • the present disclosure relates to a semiconductor laser device.
  • a semiconductor light emitting device including a light emitting diode (LED) as a light source is known (see, for example, Patent Document 1).
  • LED elements since semiconductor light emitting devices use LED elements, it is difficult to respond to increases in the output of the light source. Therefore, instead of the LED element, it may be possible to respond to higher output by using a semiconductor laser element such as a vertical cavity surface emitting laser (VCSEL).
  • VCSEL vertical cavity surface emitting laser
  • the laser light emitted from the semiconductor laser element has higher directivity than the light emitted from the LED element. Therefore, semiconductor laser devices are generally suitable for applications requiring high directivity. On the contrary, in fields where semiconductor light emitting devices using LED elements as light sources are applied, a wider directivity angle is generally required. For this reason, semiconductor laser elements are generally not suitable for use in semiconductor light-emitting devices that use LED elements as light sources. As described above, it is difficult to achieve both a high output light source and a wide directivity angle.
  • a semiconductor laser device that solves the above problems includes a substrate having a substrate surface, a semiconductor laser element provided on the substrate surface, a sealing surface facing the same side as the substrate surface, and a semiconductor laser device that intersects with the sealing surface. a first sealing end surface, and a translucent sealing resin for sealing the semiconductor laser element, the sealing resin includes a diffusion material that diffuses light, and the semiconductor laser element includes a first light emitting surface that emits laser light toward the first sealed end surface.
  • FIG. 1 is a perspective view of a semiconductor laser device according to a first embodiment.
  • FIG. 2 is a plan view of the semiconductor laser device of FIG. 1.
  • 3 is a plan view of the substrate of the semiconductor laser device of FIG. 2.
  • FIG. 4 is a back view of the substrate of FIG. 3.
  • FIG. 5 is a cross-sectional view of the semiconductor laser device taken along line F5-F5 in FIG.
  • FIG. 6 is a cross-sectional view showing the first light emitting surface of the semiconductor laser element in the semiconductor laser device of FIG. 5 and its surroundings.
  • FIG. 7 is a plan view schematically showing an example of the manufacturing process of the semiconductor laser device of the first embodiment.
  • FIG. 8 is a plan view schematically showing an example of the manufacturing process of the semiconductor laser device following FIG. 7.
  • FIG. 7 is a plan view schematically showing an example of the manufacturing process of the semiconductor laser device following FIG. 7.
  • FIG. 7 is a plan view schematically showing an example of the manufacturing process of the semiconductor laser device following
  • FIG. 9 is a plan view schematically showing an example of the manufacturing process of the semiconductor laser device following FIG. 8.
  • FIG. 10 is a cross-sectional view schematically showing the semiconductor laser device of FIG.
  • FIG. 11 is a plan view of a semiconductor laser device of a comparative example.
  • FIG. 12 is a cross-sectional view of a semiconductor laser device of a comparative example.
  • FIG. 13 is a plan view of the semiconductor laser device of the second embodiment.
  • FIG. 14 is a cross-sectional view of the semiconductor laser device taken along line F14-F14 in FIG.
  • FIG. 15 is a cross-sectional view showing the first light emitting surface of the semiconductor laser element and its surroundings in the semiconductor laser device of FIG. 14.
  • FIG. 16 is a plan view of the semiconductor laser device of the third embodiment.
  • FIG. 17 is a back view of the substrate of the semiconductor laser device of FIG. 16.
  • FIG. 18 is a cross-sectional view of the semiconductor laser device taken along line F18-F18 in FIG. 16.
  • FIG. 19 is a cross-sectional view showing the semiconductor laser device of FIG. 18 mounted on a circuit board.
  • FIG. 20 is a plan view of the semiconductor laser device of the fourth embodiment.
  • FIG. 21 is a plan view of the substrate of the semiconductor laser device of FIG. 20.
  • FIG. 22 is a back view of the substrate of FIG. 21.
  • FIG. 23 is a cross-sectional view of the semiconductor laser device taken along line F23-F23 in FIG.
  • FIG. 24 is a plan view of the semiconductor laser device of the fifth embodiment.
  • FIG. 25 is a back view of the substrate of the semiconductor laser device of FIG.
  • FIG. 26 is a cross-sectional view of the semiconductor laser device taken along line F26-F26 in FIG.
  • FIG. 27 is a plan view of the semiconductor laser device of the sixth embodiment.
  • FIG. 28 is a back view of the substrate of the semiconductor laser device of FIG. 27.
  • FIG. 29 is a cross-sectional view of the semiconductor laser device taken along line F29-F29 in FIG.
  • FIG. 30 is a plan view of the semiconductor laser device of the seventh embodiment.
  • FIG. 31 is a back view of the substrate of the semiconductor laser device of FIG. 30.
  • FIG. 32 is a cross-sectional view of the semiconductor laser device taken along line F32-F32 in FIG.
  • FIG. 33 is a circuit diagram of a laser system including the semiconductor laser device of FIG. 30.
  • FIG. 34 is a plan view of the semiconductor laser device of the eighth embodiment.
  • FIG. 35 is a cross-sectional view of the semiconductor laser device taken along line F35-F35 in FIG.
  • FIG. 36 is an enlarged view of the second light emitting surface of the semiconductor laser element and its surroundings in the semiconductor laser device of FIG. 35.
  • FIG. 37 is a plan view of the semiconductor laser device of the ninth embodiment.
  • FIG. 38 is a cross-sectional view of the semiconductor laser device taken along line F38-F38 in FIG.
  • FIG. 39 is a plan view schematically showing an example of the manufacturing process of the semiconductor laser device of the ninth embodiment.
  • FIG. 40 is a plan view schematically showing an example of the manufacturing process of the semiconductor laser device following FIG. 39.
  • FIG. 41 is a plan view schematically showing an example of the manufacturing process of the semiconductor laser device following FIG. 40.
  • FIG. 42 is a cross-sectional view schematically showing an example of the manufacturing process of the semiconductor laser device of FIG. 41.
  • FIG. 43 is a plan view of the semiconductor laser device of the tenth embodiment.
  • FIG. 44 is a plan view of the semiconductor laser device of FIG. 43 with the semiconductor laser element and wires omitted.
  • FIG. 45 is a cross-sectional view of the semiconductor laser device taken along line F45-F45 in FIG. 43.
  • FIG. 46 is a plan view of a semiconductor laser device according to a modification.
  • FIG. 47 is a cross-sectional view of a semiconductor laser device according to a modification.
  • FIG. 48 is a cross-sectional view of a semiconductor laser device according to a modification.
  • FIG. 49 is a cross-sectional view of a semiconductor laser device according to a modification.
  • FIG. 50 is a plan view of a semiconductor laser device according to a modification.
  • FIG. 51 is a cross-sectional view of the semiconductor laser device taken along line F51-F51 in FIG.
  • FIG. 52 is a plan view of a semiconductor laser device according to a modification.
  • FIG. 53 is a plan view of a semiconductor laser device according to a modification.
  • FIG. 54 is a cross-sectional view of the semiconductor laser device taken along line F54-F54 in FIG.
  • FIG. 55 is a cross-sectional view of a semiconductor laser device according to a modification.
  • FIG. 50 is a plan view of a semiconductor laser device according to a modification.
  • FIG. 51 is a cross-sectional view of the semiconductor laser device taken along line F51-F51 in FIG.
  • FIG. 52 is
  • FIG. 56 is a plan view of a semiconductor laser device according to a modification.
  • FIG. 57 is a cross-sectional view of a semiconductor laser device according to a modification.
  • FIG. 58 is a plan view of a semiconductor laser device according to a modification.
  • FIG. 59 is a plan view of a semiconductor laser device according to a modification.
  • FIG. 60 is a plan view of a semiconductor laser device according to a modification.
  • FIG. 61 is a cross-sectional view of a semiconductor laser device according to a modification.
  • FIG. 62 is a cross-sectional view of a semiconductor laser device according to a modification.
  • FIG. 63 is a cross-sectional view of a semiconductor laser device according to a modification.
  • FIG. 64 is a plan view of a semiconductor laser device according to a modification.
  • FIG. 65 is a cross-sectional view of the semiconductor laser device taken along line F65-F65 in FIG. 64.
  • FIG. 66 is a plan view schematically showing an example of the manufacturing process of the semiconductor laser device of FIG. 64.
  • FIG. 67 is a plan view schematically showing an example of the manufacturing process of the semiconductor laser device following FIG. 66.
  • FIG. 68 is a plan view of a semiconductor laser device according to a modification.
  • FIG. 69 is a cross-sectional view of the semiconductor laser device taken along line F69-F69 in FIG.
  • FIG. 70 is a plan view of a semiconductor laser device according to a modification.
  • FIGS. 1 to 10 show a schematic configuration of a semiconductor laser device 10 of the first embodiment
  • FIGS. 7 to 10 show an example of a method for manufacturing the semiconductor laser device 10 of the first embodiment.
  • planar view refers to viewing the semiconductor laser device 10 in the Z-axis direction of the mutually orthogonal XYZ axes shown in FIG. Further, in the semiconductor laser device 10 shown in FIG. 1, the +Z direction is defined as the top, and the -Z direction is defined as the bottom. Unless otherwise specified, “planar view” refers to viewing the semiconductor laser device 10 from above along the Z-axis.
  • FIG. 1 shows a perspective structure of a semiconductor laser device 10, and FIG. 2 shows a planar structure of the semiconductor laser device 10.
  • FIG. 3 shows a planar structure in which a semiconductor laser element 40, a wire W, a sealing resin 50, and a side wall 60, which will be described later, are omitted from FIG. 2.
  • FIG. 4 shows a backside structure of a substrate 20 of the semiconductor laser device 10, which will be described later.
  • the sealing resin 50 is omitted for easy understanding of the drawings.
  • FIG. 5 shows a schematic cross-sectional structure of the semiconductor laser device 10
  • FIG. 6 shows a schematic cross-sectional structure of a part of the semiconductor laser device 10 for explaining laser light emitted from the semiconductor laser device 10. There is. Note that in FIGS. 1 and 2, a diffusing material 57, which will be described later, is omitted for easy understanding of the drawings.
  • the semiconductor laser device 10 is formed into a rectangular flat plate shape with the thickness direction in the Z-axis direction.
  • the semiconductor laser device 10 includes a substrate 20 and a semiconductor laser element 40 arranged on the substrate 20.
  • the substrate 20 is a component that supports the semiconductor laser element 40.
  • the substrate 20 is formed into a flat plate shape with the Z-axis direction being the thickness direction.
  • planar view is synonymous with “viewed from the thickness direction of the substrate”.
  • the substrate 20 has a rectangular shape in which the X-axis direction is the lateral direction and the Y-axis direction is the longitudinal direction when viewed from above.
  • the substrate 20 includes a front surface 21, a back surface 22 opposite to the front surface 21, and first to fourth side surfaces 23 to 26 (see FIG. 2) that connect the front surface 21 and the back surface 22.
  • the first substrate side surface 23 and the second substrate side surface 24 constitute both end surfaces of the substrate 20 in the Y-axis direction
  • the third substrate side surface 25 and the fourth substrate side surface 26 constitute the end surfaces of the substrate 20 in the X-axis direction. It constitutes both end faces of.
  • each of the first substrate side surface 23 and the second substrate side surface 24 extends in the X-axis direction in plan view.
  • Each of the third substrate side surface 25 and the fourth substrate side surface 26 extends in the Y-axis direction in plan view.
  • the first substrate side surface 23 constitutes an end surface in the +Y direction of both end surfaces in the Y-axis direction of the substrate 20, and the second substrate side surface 24 constitutes an end surface in the -Y direction.
  • the third substrate side surface 25 constitutes an end surface in the +X direction of both end surfaces in the X-axis direction of the substrate 20, and the fourth substrate side surface 26 constitutes an end surface in the -X direction.
  • the substrate 20 is made of glass epoxy resin.
  • the substrate 20 may be formed of a material containing ceramic.
  • the ceramic-containing material include aluminum nitride (AlN) and alumina (Al 2 O 3 ).
  • AlN aluminum nitride
  • Al 2 O 3 alumina
  • the semiconductor laser device 10 includes a first wiring 31 and a second wiring 32 provided on the front surface 21 of the substrate, and a first electrode 33 and a second electrode 34 provided on the back surface 22 of the substrate. , a first via 35 that electrically connects the first wiring 31 and the first electrode 33, and a second via 36 that electrically connects the second wiring 32 and the second electrode 34.
  • Both the first wiring 31 and the second wiring 32 are formed on the substrate surface 21 in the first embodiment.
  • the first wiring 31 and the second wiring 32 are arranged so as to be spaced apart from each other in the longitudinal direction of the substrate 20, that is, in the Y-axis direction when viewed from above.
  • Each of the first wiring 31 and the second wiring 32 is formed of a material containing copper, for example. Note that the materials constituting each of the first wiring 31 and the second wiring 32 can be arbitrarily changed within the range of conductive materials.
  • the first wiring 31 is arranged closer to the first substrate side surface 23 with respect to the second wiring 32.
  • the first wiring 31 is arranged between the first substrate side surface 23 and the second wiring 32 in the Y-axis direction.
  • the second wiring 32 is arranged between the first wiring 31 and the second substrate side surface 24 in the Y-axis direction.
  • the first wiring 31 has a rectangular shape in which the X-axis direction is the short direction and the Y-axis direction is the long direction when viewed from above. That is, the longitudinal direction of the first wiring 31 and the longitudinal direction of the substrate 20 match, and the lateral direction of the first wiring 31 and the lateral direction of the substrate 20 match.
  • the second wiring 32 has a rectangular shape in which the X-axis direction is the longitudinal direction and the Y-axis direction is the lateral direction when viewed from above. That is, the lateral direction of the second wiring 32 coincides with the longitudinal direction of the substrate 20, and the longitudinal direction of the second wiring 32 coincides with the lateral direction of the substrate 20. It can also be said that the lateral direction of the second wiring 32 is the direction in which the first wiring 31 and the second wiring 32 are arranged.
  • the length of the first wiring 31 in the X-axis direction and the length of the second wiring 32 in the X-axis direction are equal to each other.
  • the length of the first wiring 31 in the Y-axis direction is longer than the length of the second wiring 32 in the Y-axis direction.
  • the first electrode 33 and the second electrode 34 are configured as external electrodes when the semiconductor laser device 10 is mounted on a circuit board (not shown). Both the first electrode 33 and the second electrode 34 are formed on the back surface 22 of the substrate in the first embodiment.
  • the first electrode 33 and the second electrode 34 are arranged so as to be spaced apart from each other in the longitudinal direction of the substrate 20, that is, in the Y-axis direction in a plan view.
  • Each of the first electrode 33 and the second electrode 34 is made of a material containing copper, for example. Note that each of the first electrode 33 and the second electrode 34 can be arbitrarily changed within the range of the conductive material.
  • the first electrode 33 is arranged closer to the first substrate side surface 23 than the second electrode 34 .
  • the first electrode 33 is arranged between the first substrate side surface 23 and the second electrode 34 in the Y-axis direction.
  • the second electrode 34 is arranged between the first electrode 33 and the second substrate side surface 24 in the Y-axis direction.
  • the first electrode 33 is arranged at a position overlapping the first wiring 31 in plan view.
  • the second electrode 34 is arranged at a position overlapping the second wiring 32.
  • the first electrode 33 has a rectangular shape in which the X-axis direction is the short direction and the Y-axis direction is the longitudinal direction when viewed from above.
  • the second electrode 34 has a rectangular shape in which the X-axis direction is the longitudinal direction and the Y-axis direction is the lateral direction when viewed from above.
  • the length of the first electrode 33 in the X-axis direction and the length of the second electrode 34 in the X-axis direction are equal to each other.
  • the length of the first electrode 33 in the Y-axis direction is longer than the length of the second electrode 34 in the Y-axis direction.
  • the area of the first electrode 33 is larger than the area of the first substrate side surface 23.
  • the area of the second electrode 34 is larger than the area of the second wiring 32.
  • the distance between the first electrode 33 and the second electrode 34 in the Y-axis direction is larger than the distance between the first wiring 31 and the second wiring 32 in the Y-axis direction.
  • the distance between the first electrode 33 and the second electrode 34 in the Y-axis direction can be changed arbitrarily. In one example, the distance between the first electrode 33 and the second electrode 34 in the Y-axis direction may be equal to the distance between the first wiring 31 and the second wiring 32 in the Y-axis direction.
  • a plurality of first vias 35 are provided. Each first via 35 is disposed at a position overlapping both the first wiring 31 and the first electrode 33 in a plan view. The multiple first vias 35 are arranged at a distance from each other in both the X-axis direction and the Y-axis direction. Each first via 35 penetrates the substrate 20 in the Z-axis direction. Each first via 35 is in contact with both the first wiring 31 and the first electrode 33.
  • a plurality of second vias 36 are provided. Each second via 36 is arranged at a position overlapping both the second wiring 32 and the second electrode 34 in plan view. The plurality of second vias 36 are spaced apart from each other and arranged in a line in the X-axis direction. Each second via 36 penetrates the substrate 20 in the Z-axis direction. Each second via 36 is in contact with both the second wiring 32 and the second electrode 34.
  • each of the first vias 35 and the second vias 36 can be changed arbitrarily.
  • the plurality of first vias 35 may be arranged in a region different from the region overlapping with the semiconductor laser element 40 in plan view.
  • the number of first vias 35 may be, for example, 13 or more.
  • the number of second vias 36 may be four or more.
  • the semiconductor laser element 40 is provided on the substrate surface 21.
  • the semiconductor laser element 40 is mounted on the first wiring 31.
  • the semiconductor laser element 40 is mounted on the first wiring 31. More specifically, as shown in FIG. 5, the semiconductor laser element 40 is bonded to the first wiring 31 using a conductive bonding material SD such as solder paste or silver paste. Therefore, the semiconductor laser element 40 is located closer to the first substrate side surface 23 (first sealed end surface 53) than the second wiring 32.
  • the second wiring 32 is located closer to the second substrate side surface 24 (second sealing end surface 54) than the semiconductor laser element 40 is. It can also be said that the second wiring 32 is provided at a position closer to the second sealing end surface 54 with respect to the second light emitting surface LS2 of the semiconductor laser element 40, which will be described later.
  • the semiconductor laser element 40 is a laser diode that emits light in a predetermined wavelength band, and functions as a light source of the semiconductor laser device 10.
  • the semiconductor laser device 40 is an edge-emitting laser device.
  • the configuration of the semiconductor laser device 40 as an edge-emitting laser device is not particularly limited, in the first embodiment, a Fabry-Perot laser diode device is employed.
  • the semiconductor laser element 40 is formed into a flat plate shape with the thickness direction in the Z-axis direction.
  • the semiconductor laser element 40 has a rectangular shape having a longitudinal direction and a lateral direction when viewed from above.
  • the semiconductor laser element 40 is arranged such that its longitudinal direction is along the Y-axis direction and its transversal direction is along the X-axis direction.
  • the semiconductor laser device 40 has a front surface 41, a back surface 42 facing opposite to the front surface 41, and first to fourth It has element side surfaces 43 to 46.
  • the element surface 41 faces the same side as the substrate surface 21 of the substrate 20, and the element back surface 42 faces the substrate surface 21.
  • the first element side surface 43 and the second element side surface 44 constitute both end surfaces of the semiconductor laser element 40 in the longitudinal direction
  • the third element side surface 45 and the fourth element side surface 46 constitute both end surfaces of the semiconductor laser element 40 in the lateral direction. It consists of In the first embodiment, the first device side surface 43 and the second device side surface 44 constitute both end surfaces of the semiconductor laser device 40 in the Y-axis direction
  • the third device side surface 45 and the fourth device side surface 46 constitute the semiconductor laser device 40 . It constitutes both end faces in the X-axis direction.
  • the first element side surface 43 constitutes an end surface in the +Y direction of both end surfaces in the Y-axis direction of the semiconductor laser element 40, and faces the same side as the first substrate side surface 23.
  • the second element side surface 44 constitutes an end surface in the -Y direction of both end surfaces in the Y-axis direction of the semiconductor laser element 40, and faces the same side as the second substrate side surface 24.
  • the third element side surface 45 constitutes an end surface in the +X direction of both end surfaces in the X-axis direction of the semiconductor laser element 40, and faces the same side as the third substrate side surface 25.
  • the fourth element side surface 46 constitutes an end surface in the -X direction of both end surfaces in the X-axis direction of the semiconductor laser element 40, and faces the same side as the fourth substrate side surface 26.
  • the first element side surface 43 constitutes a first light emitting surface LS1 that emits laser light. Since the first element side surface 43 faces in the direction intersecting the thickness direction of the substrate 20 (in the first embodiment, the direction perpendicular to the thickness direction of the substrate 20), the first light emitting surface LS1 faces in the thickness direction of the substrate 20. It can be said that it faces in a direction that intersects (perpendicularly) with.
  • the first element side surface 43 (first light emitting surface LS1) faces the same side as the first substrate side surface 23. Therefore, the semiconductor laser element 40 emits laser light mainly directed in the +Y direction.
  • the second element side surface 44 constitutes a second light emitting surface LS2 that emits laser light. Since the second element side surface 44 faces in the direction intersecting the thickness direction of the substrate 20 (in the first embodiment, the direction perpendicular to the thickness direction of the substrate 20), the second light emitting surface LS2 faces in the thickness direction of the substrate 20. It can be said that it faces in a direction that intersects (perpendicularly) with.
  • the second element side surface 44 (first light emitting side surface LS2) faces the same side as the second substrate side surface 24. That is, the second light emitting surface LS2 faces in the opposite direction to the first light emitting surface LS1. Therefore, the semiconductor laser element 40 emits laser light mainly directed in the -Y direction.
  • the output of the laser light emitted from the first light emitting surface LS1 and the output of the laser light emitted from the second light emitting surface LS2 may be different from each other.
  • the ratio of the output of the laser light emitted from the first light emitting surface LS1 and the output of the laser light emitted from the second light emitting surface LS2 is, for example, 9:1.
  • the output of the laser beam is adjusted, for example, by adjusting the reflectance of the reflective films formed on the first light emitting surface LS1 and the second light emitting surface LS2.
  • the reflectance of the reflective film formed on the first light emitting surface LS1 is set to be lower than the reflectance of the reflective film formed on the second light emitting surface LS2.
  • the semiconductor laser device 40 has an anode electrode 47 formed on the front surface 41 of the device, and a cathode electrode 48 formed on the back surface 42 of the device.
  • the cathode electrode 48 is in contact with the conductive bonding material SD. That is, the cathode electrode 48 is electrically connected to the first wiring 31 by the conductive bonding material SD. Therefore, the cathode electrode 48 is electrically connected to the first electrode 33 via the first wiring 31 and the plurality of first vias 35.
  • the semiconductor laser device 10 includes a wire W that electrically connects the anode electrode 47 and the second wiring 32. As shown in FIG. 2, the wire W extends along the Y-axis direction in plan view.
  • the wire W is made of, for example, gold (Au), silver (Ag), aluminum (Al), Cu, or the like.
  • the anode electrode 47 is electrically connected to the second electrode 34 via the second wiring 32 and a plurality of second vias 36 .
  • the wire W is a bonding wire formed by a wire bonding device.
  • the bonding portion of the wire W with the second wiring 32 is the first bonding
  • the bonding portion with the anode electrode 47 is the second bonding. This allows the height (maximum height) of the wire W to be lowered compared to a configuration in which the bonding portion of the wire W with the anode electrode 47 is first bonded and the bonding portion with the second wiring 32 is second bonding. can do.
  • the semiconductor laser device 10 of the first embodiment includes a transparent sealing resin 50 that seals the semiconductor laser element 40, and a side wall surrounding the sealing resin 50. 60.
  • the sealing resin 50 seals the first wiring 31, the second wiring 32, the semiconductor laser element 40, and the wire W in contact with the substrate surface 21.
  • the sealing resin 50 is provided on the substrate 20.
  • the sealing resin 50 plays a role of transmitting the laser light emitted from the semiconductor laser element 40 while refracting it.
  • the sealing resin 50 is made of a material containing at least one of silicone resin, epoxy resin, and acrylic resin. In one example, the sealing resin 50 is made of silicone resin.
  • the sealing resin 50 has a sealing surface 51 facing the same side as the substrate surface 21, and first to fourth sealing end surfaces 53 to 56 that intersect with the sealing surface 51.
  • the sealing surface 51 is a flat surface perpendicular to the thickness direction (Z-axis direction) of the substrate 20. In plan view, the area of the sealing surface 51 is smaller than the area of the substrate surface 21.
  • the first to fourth sealing end surfaces 53 to 56 are sealing end surfaces perpendicular to the sealing surface 51 in the first embodiment.
  • the first sealed end surface 53 and the second sealed end surface 54 constitute both end surfaces of the sealing resin 50 in the Y-axis direction.
  • Each of the first sealed end surface 53 and the second sealed end surface 54 extends along the X-axis direction in plan view.
  • the third sealed end surface 55 and the fourth sealed end surface 56 constitute both end surfaces of the sealing resin 50 in the X-axis direction.
  • Each of the third sealed end surface 55 and the fourth sealed end surface 56 extends along the Y-axis direction in plan view.
  • the first sealed end surface 53 faces the same side as the first substrate side surface 23, and the second sealed end surface 54 faces the same side as the second substrate side surface 24. That is, the second sealed end surface 54 is an end surface opposite to the first sealed end surface 53.
  • the first sealing end surface 53 is formed flush with the first substrate side surface 23 .
  • the first sealed end surface 53 is spaced apart from the first light emitting surface LS1 of the semiconductor laser element 40 in the +Y direction.
  • the second sealed end surface 54 is arranged closer to the first substrate side surface 23 than the second substrate side surface 24 . It can also be said that the second sealed end surface 54 is located between the semiconductor laser element 40 and the second substrate side surface 24 in the Y-axis direction.
  • the second sealing end surface 54 is spaced apart from the second light emitting surface LS2 of the semiconductor laser element 40 in the ⁇ Y direction.
  • the first sealed end surface 53 faces the same side as the first element side surface 43 of the semiconductor laser element 40. In other words, the first sealed end surface 53 faces the same side as the first light emitting surface LS1. Therefore, it can be said that the semiconductor laser element 40 includes the first light emitting surface LS1 that emits laser light toward the first sealed end surface 53.
  • the second sealed end face 54 faces the same side as the second element side surface 44 of the semiconductor laser element 40. In other words, the second sealed end surface 54 faces the same side as the second light emitting surface LS2. Therefore, it can be said that the semiconductor laser element 40 includes a second light emitting surface LS2 that emits laser light toward the second sealed end surface 54.
  • the first sealed end surface 53 is a dicing surface subjected to dicing processing. In this case, cutting marks are formed on the first sealing end surface 53 due to the dicing process.
  • first sealing end surface 53 may be rougher than sealing surface 51. Therefore, the arithmetic mean roughness (Ra) of the first sealing end surface 53 may be larger than the arithmetic mean roughness (Ra) of the sealing surface 51.
  • the third sealed end surface 55 faces the same side as the third substrate side surface 25, and the fourth sealed end surface 56 faces the same side as the fourth substrate side surface 26.
  • the third sealed end surface 55 is arranged closer to the fourth substrate side surface 26 than the third substrate side surface 25. It can also be said that the third sealed end surface 55 is located between the semiconductor laser element 40 and the third substrate side surface 25 in the X-axis direction.
  • the fourth sealed end surface 56 is arranged closer to the third substrate side surface 25 than the fourth substrate side surface 26 . It can also be said that the fourth sealed end surface 56 is located between the semiconductor laser element 40 and the fourth substrate side surface 26 in the X-axis direction.
  • the sealing resin 50 includes a diffusion material 57 that diffuses light. More specifically, the diffusion material 57 diffuses the light inside the sealing resin 50 by reflecting (scattering) the light at the interface between the resin in the sealing resin 50 and the diffusion material 57 . Thereby, the diffusion material 57 plays the role of diffusing the laser light emitted from the semiconductor laser element 40 inside the sealing resin 50 and widening the directivity angle of the laser light emitted from the sealing resin 50.
  • the material of the diffusion material 57 is not particularly limited, but for example, silica or other glass materials can be used. In the first embodiment, spherical silica filler is used as the diffusion material 57.
  • the particle size of the diffusing material 57 is not particularly limited, but is selected to be sufficiently small with respect to the wavelength of the laser light emitted from the semiconductor laser element 40, for example, so that scattering occurs dominantly.
  • the blending ratio of the diffusion material 57 to the resin of the sealing resin 50 is not particularly limited, and may be greater than 0% and less than 100%.
  • the blending ratio of the diffusion material 57 is preferably selected to be greater than 0% and less than or equal to 60%, and more preferably selected to be greater than or equal to 20% and less than or equal to 60%.
  • a material having a smaller coefficient of thermal expansion than the resin of the sealing resin 50 is selected as the diffusion material 57.
  • the diffusion material 57 is dispersed in the sealing resin 50 as fine particles.
  • the diffusion material 57 is mixed with the sealing resin 50 at a predetermined mixing ratio.
  • the diffusing material 57 is mixed into the sealing resin 50 so that the laser light of the semiconductor laser element 40 is scattered at a position different from the peak position of the laser light output of the semiconductor laser element 40.
  • the diffusion material 57 is evenly distributed within the sealing resin 50.
  • the side wall 60 is provided on the substrate 20.
  • the side wall 60 is made of, for example, a light-shielding material.
  • a black epoxy resin is used as an example of a light-shielding material.
  • a heat-resistant engineered plastic can be used as the material of the side wall 60.
  • the side wall 60 is arranged on the outer periphery of the substrate 20. Note that the material constituting the side wall 60 can be changed arbitrarily.
  • the side wall 60 may be made of a translucent material.
  • the side wall 60 may be made of a metal material, ceramic, or the like instead of the resin material.
  • the side wall 60 includes a pair of first side wall portions 61 that are spaced apart from each other, and a second side wall portion 62 that connects the pair of first side wall portions 61.
  • the pair of first side wall portions 61 and second side wall portions 62 are integrally formed.
  • the side wall 60 is formed by resin molding.
  • the pair of first side wall portions 61 are arranged to be spaced apart from each other in the X-axis direction.
  • each first side wall portion 61 extends in the Y-axis direction, that is, in the longitudinal direction of the substrate 20.
  • the second side wall portion 62 extends in the X-axis direction, that is, in the lateral direction of the substrate 20. The second side wall portion 62 is arranged closer to the second substrate side surface 24 of the substrate 20 than the semiconductor laser element 40 is.
  • the pair of first side wall portions 61 are arranged on both sides of the sealing resin 50 in the X-axis direction.
  • One of the pair of first side wall parts 61 is in contact with the third sealing end surface 55 of the sealing resin 50 , and the other one is in contact with the fourth sealing end surface 56 of the sealing resin 50 .
  • the second side wall portion 62 covers the second sealing end surface 54 of the sealing resin 50.
  • the second side wall portion 62 is in contact with the second sealing end surface 54 .
  • the side wall 60 surrounds the sealing resin 50 and has an opening that exposes the first sealing end surface 53. Therefore, it can be said that the side wall 60 surrounds the semiconductor laser element 40 and is open to expose the first light emitting surface LS1 of the semiconductor laser element 40.
  • the area of the first wiring 31 is larger than the area of the semiconductor laser element 40 in plan view. More specifically, the length of the first wiring 31 in the X-axis direction is longer than the length of the semiconductor laser element 40 in the X-axis direction, and the length of the first wiring 31 in the Y-axis direction is longer than the length of the semiconductor laser element 40 in the Y-axis direction. longer than the length in the direction.
  • the semiconductor laser element 40 is arranged in a portion of the first wiring 31 closer to the second wiring 32 (second substrate side surface 24). More specifically, the center of the semiconductor laser element 40 in the Y-axis direction is located closer to the second interconnect 32 (second substrate side surface 24) than the center of the first interconnect 31 in the Y-axis direction.
  • the first wiring 31 includes a first end surface 31A and a second end surface 31B that constitute both ends of the first wiring 31 in the Y-axis direction.
  • the first end surface 31A is the end surface of the first wiring 31 that is closer to the first substrate side surface 23, and the second end surface 31B is the end surface of the first wiring 31 that is closer to the second substrate side surface 24. It is an end face.
  • the first end surface 31A is arranged inside the first substrate side surface 23 (closer to the second substrate side surface 24).
  • the first end surface 31A is closer to the first substrate side surface 23 than the center in the Y-axis direction between the first substrate side surface 23 and the first element side surface 43 (first light emitting surface LS1) of the semiconductor laser element 40 in a plan view. It is located in
  • the first wiring 31 is connected to the first light emitting surface LS1 of the semiconductor laser element 40 and the first
  • the first extending portion 31C is a portion between the end surface 31A and the second extending portion 31D is a portion between the second light emitting surface LS2 and the second end surface 31B.
  • the first wiring 31 has a first extending portion 31C that is a portion extending from the first device side surface 43 (first light emitting surface LS1) of the semiconductor laser device 40 toward the first sealing end surface 53. It can also be said that it has.
  • the first extending portion 31C includes a first end surface 31A.
  • the second extending portion 31D includes a second end surface 31B.
  • the distance D1 between the first element side surface 43 (first light emitting surface LS1) of the semiconductor laser element 40 and the first end surface 31A of the first wiring 31 in the Y-axis direction is equal to the distance D1 between the second element side surface 44 of the semiconductor laser element 40 and It is larger than the distance D2 between the first wiring 31 and the second end surface 31B in the Y-axis direction.
  • the distance D1 can be said to be the length of the first extension part 31C in the Y-axis direction
  • the distance D2 can be said to be the length of the second extension part 31D in the Y-axis direction.
  • the laser light emitted by the semiconductor laser element 40 has higher directivity than a light emitting diode (LED).
  • Laser light from the semiconductor laser device 40 configured as a Fabry-Perot laser diode device as in the first embodiment is emitted in the +Y direction that is substantially perpendicular to the thickness direction (Z-axis direction) of the substrate 20. be done.
  • the laser light from the semiconductor laser element 40 is diffused (scattered) by the diffusing material 57.
  • the laser light includes laser light directed toward the substrate surface 21.
  • the first extension portion 31C reflects a portion of the laser beam directed toward the substrate surface 21.
  • the reflected laser light passes through the first sealing end face 53 or the sealing surface 51 and is emitted to the outside of the semiconductor laser device 10 .
  • the semiconductor laser device 10 can be said to include the first reflection section 70 that reflects a portion of the laser light emitted from the first light emitting surface LS1 of the semiconductor laser element 40 and directed toward the substrate surface 21.
  • the first extending portion 31C of the first wiring 31 constitutes the first reflecting portion 70.
  • the first wiring 31 has a portion extending from the first light emitting surface LS1 toward the first sealed end surface 53 as the first reflecting portion 70.
  • the position of the first end surface 31A in the Y-axis direction can be changed arbitrarily.
  • the first end surface 31A may be arranged flush with the first substrate side surface 23 in plan view.
  • the position of the first end surface 31A in the Y-axis direction may be such a position that the first extension portion 31C can reflect at least a portion of the laser beam directed toward the substrate surface 21.
  • FIGS. 7 to 10 show a configuration in which four semiconductor laser devices 10 can be manufactured at once for convenience, the configuration is not limited to this, and the configuration can be configured so that more semiconductor laser devices 10 can be manufactured at once. You can.
  • the method for manufacturing the semiconductor laser device 10 includes a step of preparing a substrate 820, a step of forming a side wall 860 on the substrate 820, a step of mounting the semiconductor laser element 40 on the first wiring 31, and a step of forming the wire W. , a step of forming a sealing resin 850, and a step of dividing into pieces.
  • a substrate 820 on which a first via 35 and a second via 36 are formed is prepared.
  • glass epoxy resin is used for the substrate 820.
  • the substrate 820 may be made of ceramic, for example.
  • the substrate 820 is formed in a size that includes, for example, a plurality of substrates 20, and includes first wirings 31, second wirings 32, first electrodes 33, second electrodes 34, first vias 35, and the like according to the number of substrates 20. and a second via 36 are formed. Both the first wiring 31 and the second wiring 32 are provided on the substrate surface 821 of the substrate 820. Both the first electrode 33 and the second electrode 34 are provided on the back surface 822 of the substrate 820 (see FIG. 10).
  • the sidewall 860 is formed on the substrate 820 by, for example, resin molding.
  • resin molding include transfer molding and compression molding.
  • the side wall 860 is integrated with the substrate 820.
  • the side wall 860 is a component that constitutes the side wall 60, and includes a plurality of unit side walls surrounding the first wiring 31 and the second wiring 32 in plan view.
  • the number of the plurality of unit side walls is set depending on, for example, the number of first wirings 31 on the substrate 820.
  • the side wall 860 which is a molded product previously formed by resin molding such as injection molding, may be attached onto the substrate 820 using, for example, an adhesive.
  • the side wall 860 and the substrate 820 are integrated.
  • the side wall 860 is not limited to being made of resin, and may be made of metal or ceramic. In this case as well, the preformed sidewall 860 may be bonded to the substrate 820 by adhesive or metal bonding.
  • the process of mounting the semiconductor laser element 40 on the first wiring 31 is the process of mounting the semiconductor laser element 40 on the first wiring 31 in the first embodiment.
  • the semiconductor laser element 40 is die-bonded onto the first wiring 31, for example.
  • the cathode electrode 48 (see FIG. 10) of the semiconductor laser element 40 and the first wiring 31 are electrically connected.
  • the wire W that electrically connects the anode electrode 47 of the semiconductor laser element 40 and the second wiring 32 is formed.
  • the wire W is a bonding wire formed by a wire bonding device.
  • first bonding is performed on the second wiring 32 side of the wire W, and second bonding is performed on the anode electrode 47 side of the semiconductor laser element 40.
  • the sealing resin 850 is formed in a space surrounded by the substrate 820 and the unit side walls of the side walls 860, for example, by resin molding. It can be said that the side wall 860 (unit side wall) surrounds the sealing resin 850.
  • the sealing resin 850 seals the first wiring 31, the second wiring 32, the semiconductor laser element 40, and the wire W.
  • the sealing resin 850 is made of a translucent material.
  • the sealing resin 850 is formed of a material containing at least one of silicone resin, epoxy resin, and acrylic resin.
  • the sealing resin 850 is formed by, for example, transfer molding or compression molding. Note that the sealing resin 850 may be filled in a space surrounded by the substrate 820 and the unit side walls of the side walls 860 by potting.
  • the sealing resin 850 includes the diffusion material 57 (see FIG. 10).
  • both the side wall 860 and the substrate 820 are cut along the cutting line CL in FIG. 9 by a dicing blade.
  • the substrate 20, side walls 60, and sealing resin 50 are formed.
  • the semiconductor laser element 40 is mounted on the first wiring 31 so that the first light emitting surface LS1 that emits laser light emits the laser light toward the first sealing end surface 53 of the sealing resin 50. That is, the semiconductor laser element 40 is mounted on the first wiring 31 so that the first light emitting surface LS1 faces the same side as the first sealed end surface 53.
  • the order of the manufacturing steps of the semiconductor laser device 10 can be changed arbitrarily.
  • a step of forming the side wall 860 on the substrate 820 is performed. may be implemented.
  • the side wall 860 which is a molded article previously formed by resin molding such as injection molding, may be attached onto the substrate 820 using, for example, an adhesive.
  • a step of forming the sealing resin 850 and a step of dividing into pieces are performed in this order.
  • FIG. 11 shows a planar structure of a semiconductor light emitting device 10X of a comparative example.
  • FIG. 12 shows a schematic cross-sectional structure of a semiconductor light emitting device 10X of a comparative example in a state where the semiconductor light emitting device 10X is arranged as a side-emitting type.
  • the semiconductor light emitting device 10X of the comparative example includes a flat substrate 20X, a first conductor 30XA and a second conductor 30XB provided on the substrate 20X, an LED element 40X, and a plurality of wires W. , a sealing resin 50X that seals the LED element 40X and each wire W, and a side wall 60X that surrounds the sealing resin 50X in plan view.
  • the sealing resin 50X differs from the sealing resin 50 in that it does not contain a diffusion material 57 (see FIG. 5).
  • the first conductor 30XA includes a first wiring 31X formed on the front surface 21X of the substrate 20X, a first electrode 33X formed on the back surface 22X of the substrate, and a side surface 23X of the first substrate. and a first side electrode 37X.
  • the first side electrode 37X connects the first wiring 31X and the first electrode 33X.
  • the second conductor 30XB includes a second wiring 32X formed on the front surface 21X of the substrate 20X, a second electrode 34X formed on the back surface 22X of the substrate, and a second side electrode 38X formed on the side surface 24X of the second substrate. ,including.
  • the second side electrode 38X connects the second wiring 32X and the second electrode 34X.
  • the LED element 40X is mounted on the first wiring 31X.
  • the element surface 41X serves as a light emitting surface LSX. Therefore, the LED element 40X emits light in the +Z direction in FIG. 12.
  • the LED element 40X is electrically connected to the second wiring 32X by a plurality of wires W.
  • the semiconductor light emitting device 10X of the comparative example when used as a side emission type, the first side electrode 37X is connected to the circuit board (not shown). That is, the semiconductor light emitting device 10X of the comparative example is mounted on a circuit board with the first substrate side surface 23 facing the circuit board. Therefore, the heat of the semiconductor light emitting device 10X of the comparative example mainly moves to the circuit board via the first side electrode 37X. Therefore, the semiconductor light emitting device 10X of the comparative example has low heat dissipation.
  • the semiconductor light emitting device 10X of the comparative example is arranged on the circuit board so that the direction perpendicular to the surface of the circuit board matches the Y-axis direction of the substrate 20X, the height of the semiconductor light emitting device 10X can be reduced. becomes difficult.
  • the output of the semiconductor light emitting device 10X of the comparative example increases, the amount of heat generated also increases. For this reason, when the semiconductor light emitting device 10X of the comparative example is used as a side-emitting type, the temperature of the LED element 40X may become excessively high due to poor heat dissipation.
  • a configuration using a VCSEL element in place of the LED element 40X can be considered.
  • the VCSEL element has a narrower directivity angle than the LED element 40X, it is difficult to use it as a semiconductor light emitting device 10X including the LED element 40X.
  • the semiconductor laser device 40 for increasing output is an edge-emitting laser device that emits laser light in the +Y direction perpendicular to the thickness direction (Z-axis direction) of the substrate 20. is used. That is, the semiconductor laser element 40 is mounted on the first wiring 31 formed on the substrate surface 21 of the substrate 20, with the first light emitting surface LS1 facing the +Y direction. Therefore, when the semiconductor laser device 10 is mounted on a circuit board, the first electrode 33 and the second electrode 34 formed on the back surface 22 of the board are mounted on the circuit board. Thereby, the semiconductor laser device 10 can achieve a lower height when mounted on a circuit board compared to the semiconductor light emitting device 10X of the comparative example.
  • the heat of the semiconductor laser device 10 is transferred to the circuit board via the first electrode 33 and the second electrode 34. Since the area of the first electrode 33 is larger than, for example, the area of the first substrate side surface 23, the semiconductor laser device 10 has higher heat dissipation than the semiconductor light emitting device 10X of the comparative example.
  • the sealing resin 50 that seals the semiconductor laser element 40 includes a diffusion material 57. Therefore, the laser light emitted from the first light emitting surface LS1 of the semiconductor laser element 40 is diffused (scattered) by the diffusing material 57. As a result, as shown in FIG. 6, laser light is emitted not only from the first sealing end surface 53 of the sealing resin 50 but also from the end portion of the sealing surface 51 closer to the first sealing end surface 53. Therefore, the laser light emitted by the semiconductor laser device 10 has a wide directivity angle, and can be used as a semiconductor light emitting device including an LED element.
  • the semiconductor laser device 10 includes a substrate 20 having a substrate surface 21, a semiconductor laser element 40 provided on the substrate surface 21, a sealing surface 51 facing the same side as the substrate surface 21, and a sealing surface 51 facing the same side as the substrate surface 21.
  • a transparent sealing resin 50 having a first sealing end surface 53 that intersects with the surface 51 and sealing the semiconductor laser element 40 is provided.
  • the sealing resin 50 includes a diffusion material 57 that diffuses light.
  • the semiconductor laser element 40 includes a first light emitting surface LS1 that emits laser light toward the first sealed end surface 53.
  • the laser light emitted from the semiconductor laser element 40 toward the first sealing end face 53 is diffused (scattered) inside the sealing resin 50 by the diffusion material 57.
  • the laser light emitted from the semiconductor laser device 10 has wide directivity.
  • the semiconductor laser device 10 can achieve directivity equivalent to that obtained with a semiconductor light emitting device including an LED element.
  • the semiconductor laser device 40 has high output and low power consumption compared to an LED device. Therefore, the semiconductor laser device 10 can be applied to a semiconductor light emitting device including an LED element by using the semiconductor laser device 40 which has the advantages of high output and low power consumption.
  • the semiconductor laser device 10 includes a first wiring 31 provided on the substrate surface 21.
  • the semiconductor laser element 40 is mounted on the first wiring 31 and provided on the substrate surface 21 via the first wiring 31.
  • the semiconductor laser device 10 is provided at a position on the first sealing end surface 53 side with respect to the first light emitting surface LS1 of the semiconductor laser element 40, and has a first surface that reflects a part of the laser light emitted from the first light emitting surface LS1. 1 reflection section 70 is further provided.
  • the laser light emitted from the first light emitting surface LS1 is reflected by the first reflecting section 70, the reflected laser light is directed upward from the substrate surface 21 to the first sealing end surface 53. It is emitted from. Therefore, it is possible to increase the amount of laser light emitted toward the region above the substrate surface 21.
  • the semiconductor laser device 10 since laser light is suppressed from being emitted from the first light emitting surface LS1 toward a region below the substrate surface 21, for example, when the semiconductor laser device 10 is mounted on a circuit board, the first light emitting surface LS1 Emission of laser light from LS1 toward the surface of the circuit board can be suppressed.
  • the first wiring 31 has a portion (first extension portion 31C) extending from the first light emitting surface LS1 toward the first sealing end surface 53 in plan view as the first reflection portion 70.
  • the first reflecting section 70 can be configured without adding any parts dedicated to the first reflecting section 70, so an increase in the number of parts of the semiconductor laser device 10 can be suppressed.
  • the semiconductor laser device 10 further includes a side wall 60 that surrounds the sealing resin 50 and has an opening that exposes the first sealing end surface 53. According to this configuration, for example, when the mounter holds the semiconductor laser device 10 when mounting the semiconductor laser device 10 on a circuit board, the external force applied to the sealing resin 50 is reduced by holding the side wall 60. Thereby, the force applied to the wire W sealed in the sealing resin 50 can be reduced.
  • the length of the first extending portion 31C in the X-axis direction is longer than the length of the semiconductor laser element 40 in the X-axis direction. According to this configuration, the laser light emitted from the first light emitting surface LS1 and diffused by the diffusing material 57 in a direction parallel to the substrate surface 21 can be reflected by the first extending portion 31C. Therefore, it is possible to increase the amount of laser light emitted toward the region above the substrate surface 21.
  • the wire W is formed so that the bonded portion with the second wiring 32 is the first bonding, and the bonded portion with the anode electrode 47 is the second bonding. According to this configuration, the height (maximum height) of the wire W from the substrate surface 21 can be reduced, in other words, the distance between the substrate surface 21 and the wire W in the Z-axis direction can be reduced, thereby making it possible to reduce the height of the semiconductor laser device 10.
  • the blending ratio of the diffusion material 57 to the sealing resin 50 is selected to be greater than 0% and less than 60%. According to this configuration, by selecting the blending ratio of the diffusing material 57 in a range greater than 0% and less than 60%, it is possible to suppress a decrease in the output of the laser light of the semiconductor laser device 10 and widen the directivity angle. Can be done.
  • the blending ratio of the diffusion material 57 to the sealing resin 50 is selected within the range of 20% to 60%. According to this configuration, by selecting the blending ratio of the diffusing material 57 in the range of 20% or more and 60% or less, it is possible to suppress a decrease in the output of the laser light of the semiconductor laser device 10 and a large decrease in the radiation intensity, and to suppress the directivity. You can widen the corners.
  • the semiconductor laser device 10 of the second embodiment will be described with reference to FIGS. 13 to 15.
  • the semiconductor laser device 10 of the second embodiment differs from the semiconductor laser device 10 of the first embodiment mainly in the configuration of the first reflection section 70.
  • the configuration of the first reflecting section 70 will be described in detail, and the same reference numerals will be given to the same components as those of the semiconductor laser device 10 of the first embodiment, and the explanation thereof will be omitted. Note that in FIG. 13, the diffusion material 57 in the sealing resin 50 is omitted for easy understanding of the drawing.
  • the semiconductor laser device 10 includes a reflector 80 as the first reflecting section 70.
  • the reflector 80 is provided on the substrate surface 21 of the substrate 20 and is at least partially covered with the sealing resin 50.
  • the reflector 80 is made of, for example, a metal material.
  • the metal material for example, Al, Cu, or an alloy thereof can be used.
  • the configuration of the reflector 80 can be changed arbitrarily.
  • the reflector 80 may have a structure in which surface plating (reflection film) is formed on the surface of a structure formed of a metal material.
  • the reflector 80 may have a structure in which surface plating (reflection film) is formed on the surface of a structure formed of a resin material.
  • the reflector 80 is arranged on the substrate surface 21 closer to the first substrate side surface 23 (closer to the first sealing end surface 53) with respect to the first element side surface 43 (first light emitting surface LS1) of the semiconductor laser element 40. More specifically, the reflector 80 is arranged on the first extending portion 31C of the first wiring 31. In the second embodiment, the first wiring 31 is formed such that the first end surface 31A is at the same position as the first substrate side surface 23 in plan view. The reflector 80 is bonded to the first wiring 31 by, for example, an adhesive (not shown).
  • the arrangement of the reflector 80 can be changed arbitrarily.
  • the reflector 80 may be placed closer to the first substrate side surface 23 than the first wiring 31 on the substrate surface 21 . That is, the substrate 20 has a space for arranging the reflector 80 between the first wiring 31 and the first substrate side surface 23 in the Y-axis direction. In this case, reflector 80 is bonded to substrate surface 21, for example by adhesive.
  • the reflector 80 extends in the X-axis direction.
  • the length of the reflector 80 in the X-axis direction is longer than the length of the semiconductor laser element 40 in the X-axis direction, for example.
  • the length of the reflector 80 in the X-axis direction is longer than the length of the first wiring 31 in the X-axis direction, for example.
  • both end surfaces of the reflector 80 in the X-axis direction are in contact with the pair of first side wall portions 61 of the side wall 60. Note that the length of the reflector 80 in the X-axis direction can be changed arbitrarily.
  • the reflector 80 has a bottom surface 81 facing the substrate surface 21, a side surface 82 extending upward from the bottom surface 81, and a reflective surface 83 connecting the bottom surface 81 and the side surface 82.
  • the bottom surface 81 is a surface in contact with the adhesive, and is formed by a flat surface perpendicular to the thickness direction (Z-axis direction) of the substrate 20.
  • the side surface 82 extends upward from the edge of the bottom surface 81 in the Y-axis direction that is closer to the first substrate side surface 23 .
  • the side surface 82 is flush with the first sealing end surface 53 of the sealing resin 50. That is, the side surface 82 is exposed from the sealing resin 50.
  • the reflective surface 83 connects the edge of the bottom surface 81 in the Y-axis direction that is closer to the semiconductor laser element 40 and the upper edge of the side surface 82 .
  • Reflective surface 83 faces in a direction intersecting substrate surface 21 . More specifically, the reflective surface 83 is an inclined surface that slopes upward toward the first substrate side surface 23 (as it moves away from the semiconductor laser element 40).
  • the inclination angle of the reflective surface 83 is set according to the range of laser light emitted from the sealing resin 50. In one example, the inclination angle of the reflective surface 83 is greater than 0° and less than 45°.
  • the inclination angle of the reflective surface 83 is an acute angle formed by the bottom surface 81 and the reflective surface 83.
  • the height dimension (size in the Z-axis direction) of the side surface 82 is greater than or equal to the thickness dimension (size in the Z-axis direction) of the semiconductor laser element 40. Therefore, when viewed from the Y-axis direction, the reflective surface 83 is formed to overlap the entire surface of the first light emitting surface LS1.
  • the laser light emitted from the first light emitting surface LS1 is diffused (scattered) by the diffusing material 57 within the sealing resin 50 and is reflected at the reflective surface 83 of the reflector 80.
  • the laser beam is emitted from the portion of the first sealing end surface 53 of the sealing resin 50 that is closer to the sealing surface 51 and from the sealing surface 51 .
  • the laser beam is reflected by the reflective surface 83 and is emitted from a portion of the sealing surface 51 that is closer to the second sealing end surface 54 than the first light emitting surface LS1 of the semiconductor laser element 40 .
  • the semiconductor laser device 10 includes a reflector 80, which is provided on the substrate surface 21 and includes a reflection surface 83 that intersects the substrate surface 21, as the first reflection section 70.
  • the laser light directed from the first light emitting surface LS1 toward the substrate surface 21 is reflected by the first reflecting section 70, the laser light emitted from the first light emitting surface LS1 is directed upward from the substrate surface 21.
  • the light is emitted from the first sealed end surface 53 toward. Therefore, it is possible to increase the amount of laser light emitted toward the region above the substrate surface 21.
  • the laser beam emitted from the first light emitting surface LS1 can be emitted from the sealing resin 50 in a desired direction in the region above the substrate surface 21. can do.
  • the inclination angle of the reflective surface 83 of the reflector 80 is greater than 0° and less than 45°. According to this configuration, a portion of the laser light emitted from the first light emitting surface LS1 can be emitted upward in the +Y direction.
  • the length of the reflector 80 in the X-axis direction is longer than the length of the semiconductor laser element 40 in the X-axis direction. According to this configuration, the laser light emitted from the first light emitting surface LS1 and diffused by the diffusing material 57 is easily reflected by the reflector 80. Therefore, it is possible to increase the amount of laser light emitted toward the region above the substrate surface 21.
  • Both end portions of the reflector 80 in the X-axis direction are in contact with the pair of first side wall portions 61 of the side wall 60. According to this configuration, the laser light emitted from the first light emitting surface LS1 and diffused by the diffusing material 57 is more easily reflected by the reflector 80. Therefore, it is possible to increase the amount of laser light emitted toward the region above the substrate surface 21.
  • a semiconductor laser device 10 according to a third embodiment will be described with reference to FIGS. 16 to 19.
  • the semiconductor laser device 10 of the third embodiment differs from the semiconductor laser device 10 of the first embodiment mainly in the configuration of the substrate 20.
  • the structure of the substrate 20 will be described in detail, and the same reference numerals will be given to the same components as those of the semiconductor laser device 10 of the first embodiment, and the explanation thereof will be omitted.
  • the diffusion material 57 in the sealing resin 50 is omitted for easy understanding of the drawing.
  • the first end surface 31A of the first wiring 31 is formed at the same position as the first substrate side surface 23 in plan view. That is, in the third embodiment, the length of the first extension part 31C in the Y-axis direction is longer than the length of the first extension part 31C in the Y-axis direction of the first embodiment.
  • the end closer to the second substrate side surface 24 is formed to be at the same position as the second substrate side surface 24 in plan view. Therefore, a portion of the second wiring 32 is formed at a position overlapping the second side wall portion 62 of the side wall 60 in plan view.
  • the length of the second wiring 32 in the Y-axis direction is longer than the length of the second wiring 32 in the Y-axis direction of the first embodiment.
  • the end closer to the first substrate side surface 23 is formed at the same position as the first substrate side surface 23 in plan view. ing. That is, in the third embodiment, the length of the first electrode 33 in the Y-axis direction is longer than the length of the first electrode 33 in the Y-axis direction of the first embodiment.
  • the end closer to the second substrate side surface 24 is formed to be at the same position as the second substrate side surface 24 in plan view. That is, in the third embodiment, the length of the second electrode 34 in the Y-axis direction is longer than the length of the second electrode 34 in the Y-axis direction of the first embodiment.
  • the substrate 20 has a first side electrode 37 formed on the first substrate side surface 23 and a second side electrode 38 formed on the second substrate side surface 24.
  • the first side electrode 37 is formed continuously from the first electrode 33. More specifically, the first side electrode 37 is connected to the end closer to the first substrate side 23 of both ends of the first electrode 33 in the Y-axis direction.
  • the length of the first side electrode 37 in the X-axis direction is, for example, equal to the length of the first electrode 33 in the X-axis direction.
  • the first side electrode 37 is connected to the first wiring 31. More specifically, the first side electrode 37 is connected to the first end surface 31A of the first wiring 31. In this way, in the third embodiment, the first side electrode 37 connects the first electrode 33 and the first wiring 31. Since the length of the first wiring 31 in the X-axis direction is equal to the length of the first electrode 33 in the X-axis direction, the length of the first side electrode 37 in the X-axis direction is, for example, equal to the length of the first wiring 31 in the X-axis direction. equal to length.
  • the second side electrode 38 is formed continuously from the second electrode 34. More specifically, the second side electrode 38 is connected to the end closer to the second substrate side surface 24 of both ends of the second electrode 34 in the Y-axis direction.
  • the length of the second side electrode 38 in the X-axis direction is, for example, equal to the length of the second electrode 34 in the X-axis direction.
  • the second side electrode 38 is connected to the second wiring 32. More specifically, the second side electrode 38 is connected to the end closer to the second substrate side 24 of both ends of the second wiring 32 in the Y-axis direction. In this manner, in the third embodiment, the second side electrode 38 connects the second electrode 34 and the second wiring 32. Since the length of the second wiring 32 in the X-axis direction is equal to the length of the second electrode 34 in the X-axis direction, the length of the second side electrode 38 in the X-axis direction is, for example, equal to the length of the second wiring 32 in the X-axis direction. equal to length.
  • the solder paste SP is applied to the first electrode 33, the second electrode 34, the first side electrode 37, and the second side surface. It is formed so as to be in contact with the electrode 38.
  • the solder paste SP forms a fillet SPA on both the first substrate side surface 23 and the second substrate side surface 24 by the first side surface electrode 37 and the second side surface electrode 38 .
  • the length of the first side electrode 37 in the X-axis direction and the length of the second side electrode 38 in the X-axis direction can be changed arbitrarily.
  • the length of the first side electrode 37 in the X-axis direction may be less than the length of the first wiring 31 in the X-axis direction, or may be longer than the length of the first wiring 31 in the X-axis direction.
  • the length of the first side electrode 37 in the X-axis direction may be less than the length of the first electrode 33 in the X-axis direction, or may be longer than the length of the first electrode 33 in the X-axis direction.
  • the length of the first side surface electrode 37 in the X-axis direction may be equal to the length of the first substrate side surface 23 in the X-axis direction.
  • the length of the second side electrode 38 in the X-axis direction may be less than the length of the second wiring 32 in the X-axis direction, or may be longer than the length of the second wiring 32 in the X-axis direction.
  • the length of the second side electrode 38 in the X-axis direction may be less than the length of the second electrode 34 in the X-axis direction, or may be longer than the length of the second electrode 34 in the X-axis direction.
  • the length of the second side surface electrode 38 in the X-axis direction may be equal to the length of the second substrate side surface 24 in the X-axis direction.
  • each of the length of the first side electrode 37 in the Z-axis direction and the length of the second side electrode 38 in the Z-axis direction can be changed arbitrarily.
  • the length of the first side surface electrode 37 in the Z-axis direction may be shorter than the length of the first substrate side surface 23 in the Z-axis direction, that is, the thickness of the substrate 20 .
  • the first side electrode 37 is not connected to the first wiring 31.
  • the length of the second side surface electrode 38 in the Z-axis direction may be shorter than the length of the second substrate side surface 24 in the Z-axis direction, that is, the thickness of the substrate 20. In this case, the second side electrode 38 is not connected to the second wiring 32.
  • the position of the first end surface 31A of the first wiring 31 can be changed arbitrarily.
  • the first end surface 31A may be located inside the first substrate side surface 23 (closer to the second substrate side surface 24). In this case, the first wiring 31 is not connected to the first side electrode 37.
  • the position of the first end surface which is the end surface closer to the second substrate side surface 24 of both end surfaces of the second wiring 32 in the Y-axis direction, can be arbitrarily changed.
  • the first end surface of the second wiring 32 may be located inside the second substrate side surface 24 (closer to the first substrate side surface 23). In this case, the second wiring 32 is not connected to the second side electrode 38.
  • each of the number of first side electrodes 37 and the number of second side electrodes 38 can be changed arbitrarily.
  • a plurality of first side electrodes 37 may be provided spaced apart from each other in the X-axis direction.
  • a plurality of second side electrodes 38 may be provided spaced apart from each other in the X-axis direction.
  • each of the first side electrode 37 and the second side electrode 38 may have any configuration as long as it can form a fillet SPA of the solder paste SP.
  • At least one of the first via 35 and the second via 36 may be omitted.
  • the configuration of the semiconductor laser device 10 can be simplified and the cost of the semiconductor laser device 10 can be reduced.
  • the cost reduction effect of the semiconductor laser device 10 can be enhanced.
  • the substrate 20 includes a first substrate side surface 23 and a second substrate side surface 24 that connect the substrate front surface 21 and the substrate back surface 22.
  • the first substrate side surface 23 faces the same side as the first light emitting surface LS1, and the second substrate side surface 24 faces the opposite side to the first substrate side surface 23.
  • a first side electrode 37 is formed on the first substrate side surface 23 and is formed continuously from the first electrode 33 .
  • a second side surface electrode 38 is formed on the second substrate side surface 24 and is formed continuously from the second electrode 34 .
  • the heat transferred from the semiconductor laser element 40 to the substrate 20 is transmitted to the first side electrode 37 and the second side electrode 38. Since both the first side electrode 37 and the second side electrode 38 are exposed to the outside of the semiconductor laser device 10 , the heat transferred to the first side electrode 37 and the second side electrode 38 is transferred to the semiconductor laser device 10 . Heat is radiated to the outside. In this way, the heat of the semiconductor laser element 40 is easily radiated to the outside of the substrate 20. Therefore, the heat dissipation performance of the semiconductor laser device 10 can be improved.
  • a fillet SPA is formed by the first side electrode 37 and the second side electrode 38. Therefore, the operator can visually confirm the mounting state of the semiconductor laser device 10 on the circuit board PCB based on the fillet SPA.
  • the fillet SPA the bonding area between the semiconductor laser device 10 and the circuit board PCB increases. Thereby, heat can be easily radiated from the semiconductor laser device 10 to the circuit board PCB, and the bonding strength between the semiconductor laser device 10 and the circuit board PCB can be improved.
  • the first side electrode 37 connects the first electrode 33 and the first wiring 31.
  • the second side electrode 38 connects the second wiring 32 and the second electrode 34. According to this configuration, the heat of the first wiring 31 moves to the first electrode 33 via the first side electrode 37. Further, the heat of the second wiring 32 moves to the second electrode 34 via the second side electrode 38. Thereby, the heat dissipation performance of the semiconductor laser device 10 can be improved.
  • the height of the fillet SPA formed by the first side electrode 37 and the second side electrode 38 can be increased, so that the operator can This makes it easier to visually confirm the mounting state of the semiconductor laser device 10 on the circuit board PCB.
  • the semiconductor laser device 10 of the fourth embodiment will be described with reference to FIGS. 20 to 23.
  • the semiconductor laser device 10 of the fourth embodiment differs from the semiconductor laser device 10 of the first embodiment mainly in the configuration of the substrate 20.
  • the structure of the substrate 20 will be described in detail, and the same reference numerals will be given to the same components as those of the semiconductor laser device 10 of the first embodiment, and the explanation thereof will be omitted. Note that in FIG. 20, the diffusion material 57 in the sealing resin 50 is omitted for easy understanding of the drawing.
  • the substrate 20 has a first end surface through hole 39A formed on the first substrate side surface 23 and a second end surface through hole 39B formed on the second substrate side surface 24.
  • the first end surface through hole 39A is formed at the center of the first substrate side surface 23 in the X-axis direction in plan view.
  • the first end surface through hole 39A is recessed from the first substrate side surface 23 toward the second substrate side surface 24.
  • the second end surface through hole 39B is formed at the center of the second substrate side surface 24 in the X-axis direction in plan view.
  • the second end surface through hole 39B is recessed from the second substrate side surface 24 toward the first substrate side surface 23.
  • each of the first end surface through hole 39A and the second end surface through hole 39B when viewed from above is approximately semicircular. Both the first end surface through hole 39A and the second end surface through hole 39B are provided so as to penetrate the substrate 20 in its thickness direction (Z-axis direction). As shown in FIG. 23, the first end surface through hole 39A connects the first wiring 31 and the first electrode 33.
  • the first end surface through hole 39A is made of a material containing copper, for example. Thereby, the first wiring 31 and the first electrode 33 are electrically connected through the first end surface through hole 39A.
  • the second end surface through hole 39B connects the second wiring 32 and the second electrode 34.
  • the second end surface through hole 39B is formed of a material containing copper, for example. Thereby, the second wiring 32 and the second electrode 34 are electrically connected by the second end surface through hole 39B.
  • a portion of the first end surface through hole 39A is provided so as to overlap the first end surface 31A of the first wiring 31. That is, a recessed portion recessed from the first end surface 31A toward the second substrate side surface 24 is formed in the center portion of the first end surface 31A in the X-axis direction.
  • the second end surface through hole 39B is provided so as to overlap the second wiring 32. That is, in the central portion of the second wiring 32 in the X-axis direction, a recessed portion is formed that is recessed from the second substrate side surface 24 toward the first substrate side surface 23.
  • a portion of the first end surface through hole 39A is provided so as to overlap the first electrode 33. That is, at the end of the first electrode 33 in the Y-axis direction that is closer to the first substrate side surface 23, the center portion in the X-axis direction is recessed from the end toward the second substrate side surface 24. A recess is formed.
  • the second end surface through hole 39B is provided so as to overlap the second electrode 34. That is, in the central portion of the second electrode 34 in the X-axis direction, a recessed portion is formed that is recessed from the second substrate side surface 24 toward the first substrate side surface 23.
  • the semiconductor laser device 10 includes a resist 90 that covers the first end surface through hole 39A.
  • the resist 90 is formed to cover the entire first end surface through hole 39A.
  • the shape of the resist 90 in a plan view is a rectangle whose longitudinal direction is in the X-axis direction and whose transverse direction is in the Y-axis direction. In plan view, the resist 90 is spaced apart from the semiconductor laser element 40 in the Y-axis direction.
  • a resist 90 is provided on the substrate surface 21.
  • a portion of the resist 90 is provided on the first wiring 31.
  • the resist 90 is made of, for example, an insulating material.
  • the length of the resist 90 in the X-axis direction is longer than the length of the semiconductor laser element 40 in the X-axis direction.
  • the length of the resist 90 in the X-axis direction can be changed arbitrarily.
  • the length of the resist 90 in the X-axis direction may be equal to or less than the length of the semiconductor laser element 40 in the X-axis direction.
  • the length of the resist 90 in the X-axis direction may be equal to or longer than the length of the first wiring 31 in the X-axis direction.
  • the resist 90 may be formed of a material with higher reflectance than the substrate 20.
  • resist 90 is formed of a white material.
  • the resist 90 constitutes the first reflecting section 70. That is, at least a portion of the laser light emitted from the first light emitting surface LS1 of the semiconductor laser element 40 and directed toward the substrate surface 21 is reflected by the resist 90 toward the first sealing end surface 53.
  • the second end surface through hole 39B is covered by the second side wall portion 62 of the side wall 60.
  • the second side wall portion 62 covers the entire second end surface through hole 39B.
  • the semiconductor laser device 10 of the fourth embodiment may include at least one of the first via 35 and the second via 36. Thereby, the heat dissipation performance of the semiconductor laser device 10 can be improved.
  • the semiconductor laser device 10 may include a second via 36 instead of the second end surface through hole 39B. Furthermore, the semiconductor laser device 10 may include a second side electrode 38 (see FIG. 18) instead of the second end surface through hole 39B.
  • the substrate 20 has a substrate back surface 22 opposite to the substrate front surface 21, and a first substrate side surface 23 that connects the substrate surface 21 and the substrate back surface 22 and faces the same side as the first light emitting surface LS1; a second substrate side surface 24 opposite to the first substrate side surface 23 .
  • the semiconductor laser device 10 further includes a first end surface through hole 39A that is recessed from the first substrate side surface 23 toward the second substrate side surface 24 and is provided so as to penetrate the substrate 20 in the thickness direction.
  • the heat of the first wiring 31 moves to the first electrode 33 via the first end surface through hole 39A.
  • the heat of the first wiring 31 is radiated to the outside of the semiconductor laser device 10 through the first end surface through hole 39A. Therefore, the heat dissipation performance of the semiconductor laser device 10 can be improved.
  • a fillet SPA is formed by the first end surface through hole 39A. Therefore, the operator can visually confirm the mounting state of the semiconductor laser device 10 on the circuit board PCB.
  • the fillet SPA the bonding area between the semiconductor laser device 10 and the circuit board PCB increases. Thereby, heat can be easily radiated from the semiconductor laser device 10 to the circuit board PCB, and the bonding strength between the semiconductor laser device 10 and the circuit board PCB can be improved.
  • the semiconductor laser device 10 further includes a resist 90 that covers the first end surface through hole 39A from the substrate surface 21 side. According to this configuration, it is possible to suppress the fillet SPA formed by the first end surface through hole 39A from protruding from the substrate surface 21.
  • the resist 90 may be made of a material with higher reflectance than the substrate 20. According to this configuration, the resist 90 can constitute the first reflecting section 70.
  • the semiconductor laser device 10 further includes a second end surface through hole 39B that is recessed from the second substrate side surface 24 toward the first substrate side surface 23 and is provided so as to penetrate the substrate 20 in the thickness direction. Be prepared. According to this configuration, the same effect as (4-1) above can be obtained.
  • the semiconductor laser device 10 of the fifth embodiment will be described with reference to FIGS. 24 to 26.
  • the semiconductor laser device 10 of the fifth embodiment differs from the semiconductor laser device 10 of the first embodiment mainly in that a photodiode 110 is added and in wiring.
  • the structure of the substrate 20 will be described in detail, and the same reference numerals will be given to the same components as those of the semiconductor laser device 10 of the first embodiment, and the explanation thereof will be omitted. Note that in FIG. 24, the diffusion material 57 in the sealing resin 50 is omitted for easy understanding of the drawing.
  • the semiconductor laser device 10 includes a third wiring 100 formed on the substrate surface 21 of the substrate 20 and a photodiode that receives laser light emitted from the second light emitting surface LS2 of the semiconductor laser element 40. 110.
  • the third wiring 100 is arranged closer to the second substrate side surface 24 with respect to the first wiring 31.
  • the third wiring 100 is arranged at a position aligned with the second wiring 32 in the Y-axis direction.
  • the third wiring 100 is arranged closer to the third substrate side surface 25 with respect to the second wiring 32. In this manner, in the fifth embodiment, the length of the second wiring 32 in the X-axis direction is shorter than that in the first embodiment in order to form a space for arranging the third wiring 100.
  • the semiconductor laser device 10 includes a third electrode 101 formed on the back surface 22 of the substrate 20, and a via 102 that electrically connects the third wiring 100 and the third electrode 101. And, it further includes.
  • the third electrode 101 is arranged closer to the second substrate side surface 24 with respect to the first electrode 33.
  • the third electrode 101 is arranged at a position aligned with the second electrode 34 in the Y-axis direction.
  • the third electrode 101 is arranged closer to the third substrate side surface 25 with respect to the second electrode 34 .
  • the third electrode 101 is arranged at a position overlapping the third wiring 100 in a plan view. In this manner, in the fifth embodiment, the length of the second electrode 34 in the X-axis direction is shorter than that in the first embodiment in order to form a space for arranging the third electrode 101.
  • the via 102 is provided at a position overlapping both the third wiring 100 and the third electrode 101 in a plan view.
  • the via 102 is provided so as to penetrate the substrate 20 in its thickness direction (Z-axis direction).
  • the via 102 is connected to both the third wiring 100 and the third electrode 101. Therefore, the third wiring 100 and the third electrode 101 are electrically connected through the via 102.
  • the number of second vias 36 in the fifth embodiment is smaller than that in the first embodiment. There are also few. In the illustrated example, two second vias 36 are provided.
  • each of the first vias 35, the second vias 36, and the vias 102 can be changed arbitrarily.
  • the number of second vias 36 may be one, or three or more.
  • the two second vias 36 may be aligned with each other in the X-axis direction and spaced apart from each other in the Y-axis direction. Further, the two second vias 36 may be arranged so as to be spaced apart from each other in a direction intersecting both the X-axis direction and the Y-axis direction in a plan view.
  • the photodiode 110 is mounted on the third wiring 100. More specifically, the photodiode 110 is bonded to the third wiring 100 using a conductive bonding material SD. That is, the photodiode 110 is mounted on the third wiring 100. Both the third wiring 100 and the photodiode 110 are sealed with a sealing resin 50.
  • the photodiode 110 is arranged closer to the second substrate side surface 24 with respect to the semiconductor laser element 40 in plan view.
  • Photodiode 110 is provided on substrate surface 21 between semiconductor laser element 40 and second sealed end surface 54 .
  • the photodiode 110 is arranged at a position overlapping the semiconductor laser element 40 when viewed from the Y-axis direction.
  • the photodiode 110 is arranged at a position partially overlapping with the semiconductor laser element 40 when viewed from the Y-axis direction.
  • the photodiode 110 may be arranged so that the semiconductor laser element 40 and the photodiode 110 entirely overlap when viewed from the Y-axis direction. In one example, the photodiode 110 may be arranged closer to the third substrate side surface 25 than the semiconductor laser element 40 when viewed from the Y-axis direction.
  • the photodiode 110 has an anode electrode 111 formed on its front surface and a cathode electrode 112 formed on its back surface.
  • the front surface of photodiode 110 faces the same side as substrate surface 21, and the back surface of photodiode 110 faces substrate surface 21.
  • the cathode electrode 112 is in contact with the conductive bonding material SD. Therefore, the cathode electrode 112 is electrically connected to the third wiring 100 by the conductive bonding material SD. Since the third wiring 100 is electrically connected to the third electrode 101, it can be said that the cathode electrode 112 is electrically connected to the third electrode 101.
  • the semiconductor laser device 10 includes a wire WD that connects the photodiode 110 and the second wiring 32.
  • the wire WD is sealed with a sealing resin 50.
  • the wire WD is made of the same material as the wire W, for example.
  • the wire WD is connected to an anode electrode 111 formed on the surface of the photodiode 110. Thereby, the anode electrode 111 is electrically connected to the second wiring 32 by the wire WD. Since the second wiring 32 is electrically connected to the second electrode 34 (see FIG. 25), it can be said that the anode electrode 111 is electrically connected to the second electrode 34.
  • the photodiode 110 When the photodiode 110 receives the laser light emitted from the second light emitting surface LS2 of the semiconductor laser element 40, a current flows from the anode electrode 111 to the cathode electrode 112. The current flowing through the photodiode 110 changes depending on, for example, the intensity of the received light.
  • control device obtains the current of the photodiode 110 through the second electrode 34 and the third electrode 101.
  • the control device can control the output of the semiconductor laser element 40 to be constant according to the current of the photodiode 110.
  • the semiconductor laser device 10 includes a photodiode that is provided between the semiconductor laser element 40 and the second sealing end surface 54 on the substrate surface 21 and receives laser light emitted from the second light emitting surface LS2. 110.
  • the control device outside the semiconductor laser device 10 receives the laser light emitted from the second light emitting surface LS2, for example. It can provide information about radiant intensity. Thereby, the control device can control the output of the semiconductor laser element 40 to be constant.
  • the second wiring 32 is a wiring common to the wire W connected to the anode electrode 47 of the semiconductor laser element 40 and the wire WD connected to the anode electrode 111 of the photodiode 110.
  • the semiconductor The laser device 10 can be made smaller.
  • the semiconductor laser device 10 of the sixth embodiment will be described with reference to FIGS. 27 to 29.
  • the semiconductor laser device 10 of the sixth embodiment differs from the semiconductor laser device 10 of the first embodiment mainly in the configuration of the semiconductor laser element and wiring.
  • the structure of the semiconductor laser element and the wiring will be explained in detail, and the same reference numerals will be given to the same components as those of the semiconductor laser device 10 of the first embodiment, and the explanation thereof will be omitted. Note that in FIG. 27, the diffusion material 57 in the sealing resin 50 is omitted for easy understanding of the drawing.
  • the semiconductor laser device 10 includes a multi-array type semiconductor laser element 120.
  • the semiconductor laser element 120 employs a Fabry-Perot type laser diode element.
  • the semiconductor laser element 120 is formed into a flat plate shape whose thickness direction is in the Z-axis direction.
  • the semiconductor laser element 120 is formed in a rectangular shape with the X-axis direction being the short direction and the Y-axis direction being the long direction.
  • Semiconductor laser element 120 includes a plurality of light emitting sections.
  • the plurality of light emitting sections include a first light emitting section PD1, a second light emitting section PD2, a third light emitting section PD3, and a fourth light emitting section PD4.
  • the first to fourth light emitting parts PD1 to PD4 are arranged in the X-axis direction on the first light emitting surface LS1.
  • the semiconductor laser device 120 has a device front surface 121, a device back surface 122 facing opposite to the device front surface 121, and first to fourth device side surfaces 123 to 126 that connect the device front surface 121 and the device back surface 122.
  • the element surface 121 faces the same side as the substrate surface 21 of the substrate 20, and the element back surface 122 faces the substrate surface 21.
  • the first element side surface 123 and the second element side surface 124 constitute both end surfaces of the semiconductor laser element 120 in the longitudinal direction
  • the third element side surface 125 and the fourth element side surface 126 constitute both end surfaces of the semiconductor laser element 120 in the lateral direction.
  • the first device side surface 123 and the second device side surface 124 constitute both end surfaces of the semiconductor laser device 120 in the Y-axis direction
  • the third device side surface 125 and the fourth device side surface 126 constitute the semiconductor laser device 40 . It constitutes both end faces in the X-axis direction.
  • the first element side surface 123 constitutes a first light emitting surface LS1 that emits the laser light of the semiconductor laser element 120.
  • the first element side surface 123 (first light emitting surface LS1) faces the same side as the first substrate side surface 23. Therefore, in plan view, the semiconductor laser element 120 emits laser light mainly directed in the +Y direction.
  • the second element side surface 124 constitutes a second light emitting surface LS2 that emits the laser light of the semiconductor laser element 120.
  • the second element side surface 124 (first light emitting surface LS2) faces the same side as the second substrate side surface 24. Therefore, in plan view, the semiconductor laser element 120 emits laser light mainly directed in the ⁇ Y direction.
  • the ratio of the output of the laser light emitted from the first light emitting surface LS1 and the output of the laser light emitted from the second light emitting surface LS2 is, for example, 9:1.
  • the ratio between the output of the laser light emitted from the first light emitting surface LS1 and the output of the laser light emitted from the second light emitting surface LS2 is, for example, 9: It is 1.
  • the semiconductor laser device 120 has anode electrodes 127A to 127D formed on the front surface 121 of the device and a cathode electrode 128 formed on the back surface 122 of the device.
  • Each of the anode electrodes 127A to 127D is formed at an end of the element surface 121 closer to the second substrate side surface 24.
  • the anode electrodes 127A to 127D are aligned with each other in the Y-axis direction and spaced apart from each other in the X-axis direction.
  • the anode electrodes 127A to 127D are arranged in the order of anode electrodes 127A, 127B, 127C, and 127D from the third element side surface 125 to the fourth element side surface 126.
  • the semiconductor laser device 10 includes second wirings 32A to 32D instead of the second wiring 32 (see FIG. 2).
  • the second wirings 32A to 32D are made of a material containing copper, for example.
  • Each of the second wirings 32A to 32D is arranged closer to the second substrate side surface 24 with respect to the first wiring 31.
  • the second wirings 32A to 32D are arranged to be aligned with each other in the Y-axis direction and spaced apart from each other in the X-axis direction.
  • the second wirings 32A to 32D are arranged in the order of second wirings 32A, 32B, 32C, and 32D from the third substrate side surface 25 toward the fourth substrate side surface 26.
  • the semiconductor laser device 10 includes second electrodes 34A to 34D instead of the second electrode 34 (see FIG. 4).
  • the second electrodes 34A to 34D are made of a material containing copper, for example.
  • Each of the second electrodes 34A to 34D is arranged closer to the second substrate side surface 24 with respect to the first electrode 33.
  • the second electrodes 34A to 34D are aligned with each other in the Y-axis direction and spaced apart from each other in the X-axis direction.
  • the second electrodes 34A to 34D are arranged in the order of second electrodes 34A, 34B, 34C, and 34D from the third substrate side surface 25 toward the fourth substrate side surface 26.
  • the second electrodes 34A to 34D are individually electrically connected to the second wirings 32A to 32D by second vias 36A to 36D. More specifically, the second wiring 32A is electrically connected to the second electrode 34A via the second via 36A. The second wiring 32B is electrically connected to the second electrode 34B via a second via 36B. The second wiring 32C is electrically connected to the second electrode 34C via a second via 36C. The second wiring 32D is electrically connected to the second electrode 34D via a second via 36D. Note that the number and arrangement of each of the second vias 36A to 36D can be changed arbitrarily.
  • the cathode electrode 128 is in contact with the conductive bonding material SD. That is, the cathode electrode 128 is electrically connected to the first wiring 31 by the conductive bonding material SD. Therefore, the cathode electrode 128 is electrically connected to the first electrode 33 via the first wiring 31 and the plurality of first vias 35.
  • the semiconductor laser device 10 includes wires W1 to W4 that individually electrically connect anode electrodes 127A to 127D and second wirings 32A to 32D.
  • the wires W1 to W4 are made of the same material as the wire W of the first embodiment (see FIG. 2).
  • the anode electrode 127A is electrically connected to the second wiring 32A by a wire W1.
  • the anode electrode 127B is electrically connected to the second wiring 32B by a wire W2.
  • the anode electrode 127C is electrically connected to the second wiring 32C by a wire W3.
  • the anode electrode 127D is electrically connected to the second wiring 32D by a wire W4.
  • the anode electrodes 127A to 127D are individually electrically connected to the second electrodes 34A to 34D via second wirings 32A to 32D and a plurality of second vias 36A to 36D, respectively.
  • the semiconductor laser element 120 has a configuration in which a plurality of light emitting parts are lined up on one light emitting surface. More specifically, the semiconductor laser device 120 has a configuration in which first to fourth light emitting parts PD1 to PD4 are arranged in the X-axis direction with respect to the first light emitting surface LS1. It can also be said that the semiconductor laser element 120 has a configuration in which the first to fourth light emitting parts PD1 to PD4 are arranged in the X-axis direction with respect to the second light emitting surface LS2.
  • the first to fourth light emitting units PD1 to PD4 may be configured to have different outputs of laser light, or may be configured to have the same output of laser light.
  • One to three of the first to fourth light emitting units PD1 to PD4 may be configured to output laser light differently from the other light emitting units.
  • the semiconductor laser device 120 can adjust the laser light output of the semiconductor laser device 120 by changing the number of light emitting sections that emit laser light among the first to fourth light emitting sections PD1 to PD4. .
  • the semiconductor laser element 120 has a plurality of light emitting parts (first to fourth light emitting parts PD1 to PD4).
  • the output of the laser light emitted from the semiconductor laser element 120 is improved compared to a configuration in which laser light is emitted from one light emitting part. can be done. Furthermore, by changing the number of light emitting sections that emit laser light, the output of the laser light emitted from the semiconductor laser element 120 can be easily adjusted.
  • a semiconductor laser device 10 according to a seventh embodiment will be described with reference to FIGS. 30 to 33.
  • the semiconductor laser device 10 of the seventh embodiment differs from the semiconductor laser device 10 of the first embodiment mainly in that it further includes a drive circuit element 130 and in the configuration of wiring.
  • the structure of the drive circuit element 130 and the structure of the wiring will be explained in detail, and the same reference numerals will be given to the same components as those of the semiconductor laser device 10 of the first embodiment, and the explanation thereof will be omitted. Note that in FIG. 30, the diffusion material 57 in the sealing resin 50 is omitted for easy understanding of the drawing.
  • the semiconductor laser device 10 further includes a drive circuit wiring 140, a gate wiring 141G, and a source wiring 141S.
  • the drive circuit wiring 140 is arranged closer to the second substrate side surface 24 with respect to the first wiring 31.
  • the drive circuit wiring 140 is arranged between the first wiring 31 and the second substrate side surface 24 in the Y-axis direction.
  • the drive circuit wiring 140 is formed in a rectangular shape, with the X-axis direction being the longitudinal direction and the Y-axis direction being the lateral direction when viewed from above.
  • Both the gate wiring 141G and the source wiring 141S are arranged closer to the second substrate side surface 24 with respect to the drive circuit wiring 140.
  • both the gate wiring 141G and the source wiring 141S are arranged between the drive circuit wiring 140 and the second substrate side surface 24 in the Y-axis direction.
  • the drive circuit wiring 140 is formed in a rectangular shape, with the X-axis direction being the longitudinal direction and the Y-axis direction being the lateral direction when viewed from above.
  • the length of the gate wiring 141G in the X-axis direction and the length of the source wiring 141S in the X-axis direction are each shorter than the length of the drive circuit wiring 140 in the X-axis direction.
  • the gate wiring 141G is arranged at the center of the substrate surface 21 in the X-axis direction.
  • the source wiring 141S is arranged closer to the third substrate side surface 25 than the gate wiring 141G in the X-axis direction. Note that the length and arrangement of each of the gate wiring 141G and the source wiring 141S in the X-axis direction can be changed arbitrarily.
  • the first wiring 31 of the seventh embodiment has a longer length in the X-axis direction to match the drive circuit wiring 140.
  • the length of the first wiring 31 in the X-axis direction is equal to the length of the drive circuit wiring 140 in the X-axis direction. Note that the length of the first wiring 31 in the X-axis direction and the length of the drive circuit wiring 140 in the X-axis direction may be different from each other.
  • the semiconductor laser device 10 further includes a drive circuit electrode 142, a gate electrode 143G, and a source electrode 143S.
  • the drive circuit electrode 142 is arranged closer to the second substrate side surface 24 than the first electrode 33 is. Both the gate electrode 143G and the source electrode 143S are arranged closer to the second substrate side surface 24 than the drive circuit electrode 142. That is, in plan view, both the gate electrode 143G and the source electrode 143S are arranged between the drive circuit electrode 142 and the second substrate side surface 24 in the Y-axis direction. In plan view, the drive circuit electrode 142 is arranged between the first electrode 33, the gate electrode 143G, and the source electrode 143S in the Y-axis direction.
  • the semiconductor laser device 10 includes a drive circuit via 144 that electrically connects a drive circuit wiring 140 and a drive circuit electrode 142, and a gate wiring 141G and a gate electrode 143G. It further includes a gate via 145G that electrically connects and a source via 145S that electrically connects the source wiring 141S and the source electrode 143S.
  • a plurality of drive circuit vias 144 are provided. Each drive circuit via 144 is arranged at a position overlapping both the drive circuit wiring 140 and the drive circuit electrode 142 in plan view. The plurality of drive circuit vias 144 are arranged to be spaced apart from each other in both the X-axis direction and the Y-axis direction. Each drive circuit via 144 penetrates the substrate 20 in the Z-axis direction. Each drive circuit via 144 is in contact with both the drive circuit wiring 140 and the drive circuit electrode 142.
  • the gate via 145G is arranged at a position overlapping both the gate wiring 141G and the gate electrode 143G in plan view.
  • the gate via 145G penetrates the substrate 20 in the Z-axis direction.
  • the gate via 145G is in contact with both the gate wiring 141G and the gate electrode 143G.
  • the source via 145S is arranged at a position overlapping both the source wiring 141S and the source electrode 143S in plan view.
  • the source via 145S penetrates the substrate 20 in the Z-axis direction.
  • the source via 145S is in contact with both the source wiring 141S and the source electrode 143S. Note that the number and arrangement of each of the drive circuit vias 144, gate vias 145G, and source vias 145S can be changed as desired.
  • the drive circuit element 130 is an element that drives the semiconductor laser element 40.
  • Drive circuit element 130 includes a switching element 131 and a capacitor 132.
  • Drive circuit element 130 is mounted on substrate surface 21 . More specifically, switching element 131 and two capacitors 132 are each mounted on substrate surface 21.
  • the switching element 131 is a semiconductor element that controls the current supplied to the semiconductor laser element 40.
  • Switching element 131 is, for example, a transistor.
  • a MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor
  • the switching element 131 includes a source electrode 131S, a drain electrode 131D (see FIG. 32), and a gate electrode 131G.
  • the switching element 131 is formed into a flat plate shape. As shown in FIG. 32, the thickness of the switching element 131 is thicker than the thickness of the semiconductor laser element 40.
  • the shape of the switching element 131 in plan view is rectangular. In the seventh embodiment, the shape of the switching element 131 in plan view is a square. Note that the shape of the switching element 131 in plan view can be arbitrarily changed. In one example, the shape of the switching element 131 in a plan view may be a rectangular shape in which the X-axis direction is the longitudinal direction and the Y-axis direction is the lateral direction.
  • the area of the switching element 131 in plan view is larger than the area of the semiconductor laser element 40.
  • the chip size of the switching element 131 is larger than the chip size of the semiconductor laser element 40.
  • the chip size of the switching element 131 can be changed arbitrarily.
  • the thickness of the switching element 131 may be less than or equal to the thickness of the semiconductor laser element 40.
  • the switching element 131 has a switching element front surface 131A and a switching element back surface 131B facing oppositely to each other in the Z-axis direction.
  • the switching element surface 131A is a surface facing the same side as the substrate surface 21.
  • a source electrode 131S and a gate electrode 131G are formed on the switching element surface 131A.
  • the source electrode 131S is formed over most of the switching element surface 131A.
  • the gate electrode 131G is formed at the end closer to the second substrate side surface 24 of both ends of the switching element surface 131A in the Y-axis direction and at the center in the X-axis direction.
  • the switching element back surface 131B is a surface facing the same side as the substrate back surface 22.
  • the switching element back surface 131B can also be said to be a surface facing the substrate surface 21.
  • a drain electrode 131D is formed on the back surface 131B of the switching element. In this way, the switching element 131 of the seventh embodiment uses a vertically structured MOSFET.
  • the back surface 131B of the switching element is bonded to the drive circuit wiring 140 using a conductive bonding material SD. Therefore, the drain electrode 131D is electrically connected to the drive circuit wiring 140 via the conductive bonding material SD.
  • the source electrode 131S and the anode electrode 47 of the semiconductor laser element 40 are connected by a wire WF. Thereby, the source electrode 131S and the anode electrode 47 are electrically connected.
  • the gate electrode 131G and the gate wiring 141G are connected by a wire WG. Thereby, the gate electrode 131G and the gate wiring 141G are electrically connected.
  • the source electrode 131S and the source wiring 141S are connected by a wire WS. Thereby, the source electrode 131S and the source wiring 141S are electrically connected.
  • the wires WF, WG, and WS are made of, for example, the same material as the wire W of the first embodiment (see FIG. 2). Note that the numbers of wires WF, WG, and WS can be changed arbitrarily.
  • the capacitor 132 is an electronic component that cooperates with the switching element 131 to supply current to the semiconductor laser element 40.
  • a plurality of capacitors 132 are provided.
  • Each capacitor 132 is formed into a substantially rectangular parallelepiped shape.
  • the shape of the capacitor 132 in a plan view is a rectangular shape in which the Y-axis direction is the longitudinal direction and the X-axis direction is the lateral direction.
  • the capacitor 132 includes a first electrode 132A and a second electrode 132B.
  • the first electrode 132A and the second electrode 132B are formed apart from each other in the longitudinal direction of the capacitor 132, that is, in the Y-axis direction.
  • the first electrode 132A is provided at the end of the capacitor 132 in the Y-axis direction that is closer to the first substrate side surface 23, and the second electrode 132B is provided in the Y-axis direction of the capacitor 132. It is provided at the end closer to the second substrate side surface 24 of both ends.
  • the shapes and sizes of the plurality of capacitors 132 are the same. Furthermore, the capacitances of the plurality of capacitors 132 are equal to each other.
  • Each capacitor 132 is arranged so as to straddle the first wiring 31 and the drive circuit wiring 140 in the Y-axis direction.
  • the first electrode 132A of each capacitor 132 is bonded to the first wiring 31 with a conductive bonding material (not shown). Thereby, the first electrode 132A of each capacitor 132 is electrically connected to the first wiring 31. Since the cathode electrode 48 (see FIG. 32) of the semiconductor laser element 40 is electrically connected to the first wiring 31, the first electrode 132A is electrically connected to the cathode electrode 48 via the first wiring 31. It can be said that there are. Since the first wiring 31 is electrically connected to the first electrode 33 (see FIG. 32), both the first electrode 132A of each capacitor 132 and the cathode electrode 48 of the semiconductor laser element 40 are connected to the first electrode 33. electrically connected.
  • the second electrode 132B of each capacitor 132 is bonded to the drive circuit wiring 140 with a conductive bonding material (not shown). More specifically, the second electrode 132B of each capacitor 132 is electrically connected to the drive circuit wiring 140. Since the drain electrode 131D (see FIG. 32) of the switching element 131 is electrically connected to the drive circuit wiring 140, the second electrode 132B of each capacitor 132 is electrically connected to the drain electrode 131D. Since the drive circuit wiring 140 is electrically connected to the drive circuit electrode 142, both the second electrode 132B and the drain electrode 131D of each capacitor 132 are electrically connected to the drive circuit electrode 142. . Note that the conductive bonding material used for mounting the capacitor 132 is, for example, the same conductive bonding material SD used for mounting the semiconductor laser element 40.
  • the plurality of capacitors 132 are arranged spaced apart from each other in the X-axis direction. For this reason, the plurality of capacitors 132 are arranged so that the arrangement direction thereof is the lateral direction of the capacitors 132. The plurality of capacitors 132 are distributed and arranged on both sides of the switching element 131 in the X-axis direction.
  • Each capacitor 132 is arranged at a position overlapping both the semiconductor laser element 40 and the switching element 131 when viewed from the X-axis direction. More specifically, the first electrode 132A of each capacitor 132 is arranged at a position overlapping the semiconductor laser element 40 when viewed from the X-axis direction. The second electrode 132B of each capacitor 132 is arranged at a position overlapping the switching element 131 when viewed from the X-axis direction.
  • the first electrode 132A of each capacitor 132 is arranged to be shifted toward the switching element 131 with respect to the semiconductor laser element 40.
  • the first electrode 132A of each capacitor 132 is arranged to be shifted closer to the switching element 131 than the center of the semiconductor laser element 40 in the Y-axis direction.
  • the plurality of capacitors 132 are arranged symmetrically with respect to the semiconductor laser element 40 and the switching element 131 in plan view. This creates a loop-shaped first wiring path through which current flows from the capacitor 132 disposed on one side of the switching element 131 in the X-axis direction to the semiconductor laser element 40 via the switching element 131, and A loop-shaped second wiring path through which current flows from the capacitor 132 disposed on the other side to the semiconductor laser element 40 via the switching element 131 is formed symmetrically with respect to the semiconductor laser element 40 and the switching element 131.
  • the sealing resin 50 in addition to the semiconductor laser element 40 and the first wiring 31, the sealing resin 50 includes a drive circuit element 130 (switching element 131 and a capacitor 132), a drive circuit wiring 140, The gate wiring 141G and wires WF and WG are sealed.
  • the side wall 60 (see FIG. 2) is omitted from the semiconductor laser device 10.
  • a sealing resin 50 is formed over the entire substrate surface 21. Therefore, the first sealed end surface 53 and the first substrate side surface 23 are flush with each other, the second sealed end surface 54 is flush with the second substrate side surface 24, and the third sealed end surface 55 and the third substrate side surface 25 are flush with each other. are flush with each other, and the fourth sealing end surface 56 and the fourth substrate side surface 26 are flush with each other.
  • the size of the sealing resin 50 can be changed arbitrarily.
  • the sealing resin 50 may be one size smaller than the substrate 20 in plan view.
  • the first to fourth sealing end surfaces 53 to 56 are located inside the first to fourth substrate side surfaces 23 to 26.
  • FIG. 33 shows a circuit configuration of a laser system LS using the semiconductor laser device 10.
  • the laser system LS includes a semiconductor laser device 10, a drive power source DV, a resistance element R, a diode D, and a driver circuit PM.
  • Each of the drive power supply DV, the resistance element R, the diode D, and the driver circuit PM is provided outside the semiconductor laser device 10.
  • the drive power supply DV is, for example, a DC power supply.
  • the drain electrode 131D of the switching element 131 and the second electrode 132B of the capacitor 132 are electrically connected to the positive electrode of the drive power supply DV via the resistance element R.
  • the source electrode 131S of the switching element 131 is electrically connected to the anode electrode 47 of the semiconductor laser element 40. Further, the source electrode 131S is electrically connected to the negative electrode of the drive power source DV.
  • the cathode electrode 48 of the semiconductor laser element 40 is electrically connected to the first electrode 132A of the capacitor 132.
  • the gate electrode 131G of the switching element 131 is electrically connected to the driver circuit PM.
  • the driver circuit PM includes, for example, a rectangular wave oscillation circuit that generates a pulsed signal, and a gate driver IC (Integrated Circuit) provided between the rectangular wave oscillation circuit and the semiconductor laser device 10.
  • the gate driver IC generates a control signal for the switching element 131 based on a signal from the rectangular wave oscillation circuit.
  • a diode D is connected in antiparallel to the semiconductor laser element 40.
  • the semiconductor laser device 10 operates as follows. That is, when the switching element 131 is turned off by the control signal of the driver circuit PM, the capacitor 132 is charged by the drive power supply DV. When the switching element 131 is turned on by the control signal from the driver circuit PM, the capacitor 132 is discharged and current flows through the semiconductor laser element 40. Thereby, the semiconductor laser element 40 emits pulsed laser light.
  • the semiconductor laser device 10 further includes a drive circuit element 130 that is mounted on the substrate surface 21 and drives the semiconductor laser element 40.
  • a drive circuit element 130 that is mounted on the substrate surface 21 and drives the semiconductor laser element 40.
  • the semiconductor laser device 10 of the eighth embodiment will be described with reference to FIGS. 34 to 36.
  • the semiconductor laser device 10 of the eighth embodiment differs from the semiconductor laser device 10 of the first embodiment mainly in the configurations of the semiconductor laser element 40 and the sidewalls 60.
  • the configurations of the semiconductor laser element 40 and the side wall 60 will be described in detail, and the same reference numerals will be given to the same components as those of the semiconductor laser device 10 of the first embodiment, and the description thereof will be omitted. Note that in FIG. 34, the diffusion material 57 in the sealing resin 50 is omitted for easy understanding of the drawing.
  • the output of the laser light emitted from the first light emitting surface LS1 is adjusted to be equal to the output of the laser light emitted from the second light emitting surface LS2, for example.
  • the reflectance of the reflective film formed on the first light emitting surface LS1 and the reflectance of the reflective film formed on the second light emitting surface LS2 are set to be equal to each other.
  • the relationship between the output of the laser light emitted from the first light emitting surface LS1 and the output of the laser light emitted from the second light emitting surface LS2 can be arbitrarily changed.
  • the output of the laser light emitted from the first light emitting surface LS1 may be greater than the output of the laser light emitted from the second light emitting surface LS2.
  • the output of the laser light emitted from the second light emitting surface LS2 may be greater than the output of the laser light emitted from the first light emitting surface LS1.
  • the side wall 60 differs from the first embodiment in that the second side wall portion 62 (see FIG. 2) is omitted. That is, the side wall 60 is composed of a pair of first side wall parts 61. In other words, the side wall 60 has an opening that exposes the second sealing end surface 54 of the sealing resin 50. That is, the side wall 60 has openings that expose the first sealed end surface 53 and the second sealed end surface 54, respectively.
  • the second sealed end surface 54 is flush with the second substrate side surface 24.
  • the second sealing end surface 54 may be rougher than the sealing surface 51.
  • the arithmetic mean roughness of the second sealing end surface 54 may be larger than the arithmetic mean roughness of the sealing surface 51, similarly to the first sealing end surface 53.
  • the second sealed end surface 54 is a dicing surface formed by dicing. In this case, cutting marks are formed on the second sealing end surface 54 by the dicing process.
  • the first laser light emitted from the first light emitting surface LS1 of the semiconductor laser element 40 is diffused (scattered) by the diffusing material 57.
  • the first laser light includes laser light directed toward the substrate surface 21.
  • the first extension portion 31C reflects at least a portion of the laser beam directed toward the substrate surface 21.
  • the reflected laser light passes through the first sealing end face 53 or the sealing surface 51 and is emitted to the outside of the semiconductor laser device 10 .
  • the semiconductor laser device 10 can be said to include the first reflecting section 70 that reflects at least a portion of the laser light emitted from the first light emitting surface LS1 of the semiconductor laser element 40 and directed toward the substrate surface 21.
  • the first extending portion 31C of the first wiring 31 constitutes the first reflecting portion 70.
  • the first wiring 31 can be said to have a portion extending from the first light emitting surface LS1 toward the first sealed end surface 53 as the first reflecting portion 70.
  • the second laser light emitted from the second light emitting surface LS2 of the semiconductor laser element 40 is diffused (scattered) by the diffusing material 57.
  • the second laser light includes laser light directed toward the substrate surface 21.
  • the second wiring 32 reflects at least a portion of the laser beam directed toward the substrate surface 21.
  • the reflected laser light passes through the second sealing end face 54 or the sealing surface 51 and is emitted to the outside of the semiconductor laser device 10 .
  • the semiconductor laser device 10 can be said to include the second reflection section 150 that reflects at least a portion of the laser light emitted from the second light emitting surface LS2 of the semiconductor laser element 40 and directed toward the substrate surface 21.
  • the second wiring 32 constitutes the second reflection section 150.
  • the position of the end surface of the second wiring 32 in the Y-axis direction that is closer to the second substrate side surface 24 can be changed arbitrarily.
  • the end surface may be located closer to the second substrate side surface 24 than the position shown in FIG. 34 in plan view, or may be located at the same position as the second substrate side surface 24. This makes it easier to reflect the laser beam directed toward the substrate surface 21 among the second laser beams.
  • the sealing resin 50 includes a second sealing end surface 54 opposite to the first sealing end surface 53.
  • the semiconductor laser element 40 includes a second light emitting surface LS2 that emits laser light toward the second sealed end surface 54.
  • the semiconductor laser device 10 emits a first laser beam with a wide directivity angle that is emitted in the +Y direction and a second laser beam with a wide directivity angle that is emitted in the -Y direction. can do. Therefore, the directivity angle of the laser light emitted from the semiconductor laser device 10 can be further expanded.
  • the semiconductor laser device 10 further includes a second reflection section 150 that reflects at least a portion of the laser light emitted from the second light emitting surface LS2 and directed toward the substrate surface 21.
  • the second reflecting section 150 is provided at a position closer to the second sealing end surface 54 with respect to the second light emitting surface LS2.
  • the laser light directed from the second light emitting surface LS2 toward the substrate surface 21 is reflected by the second reflecting section 150, the laser light emitted from the second light emitting surface LS2 is directed upward from the substrate surface 21.
  • the light is emitted from the second sealed end surface 54 toward. Therefore, for example, when the semiconductor laser device 10 is mounted on a circuit board, laser light can be suppressed from being emitted from the second light emitting surface LS2 toward the surface of the circuit board.
  • the semiconductor laser device 10 further includes a second wiring 32 provided on the substrate 20 and electrically connected to the semiconductor laser element 40 by a wire W.
  • the second wiring 32 is arranged at a position closer to the second sealing end surface 54 with respect to the second light emitting surface LS2 of the semiconductor laser element 40.
  • the second reflective section 150 is configured by the second wiring 32.
  • the second reflecting section 150 can be configured without adding any parts dedicated to the second reflecting section 150. Therefore, an increase in the number of parts of the semiconductor laser device 10 can be suppressed.
  • the semiconductor laser device 10 of the ninth embodiment will be described with reference to FIGS. 37 to 42.
  • the semiconductor laser device 10 of the ninth embodiment differs from the semiconductor laser device 10 of the first embodiment mainly in the structure of the substrate.
  • the structure of the substrate 20 will be described in detail, and the same reference numerals will be given to the same components as those of the semiconductor laser device 10 of the first embodiment, and the explanation thereof will be omitted. Note that in FIG. 37, the diffusion material 57 in the sealing resin 50 is omitted for easy understanding of the drawing.
  • the semiconductor laser device 10 includes a substrate 20, a first wiring 31, a second wiring 32, a first electrode 33, a second electrode 34, a first via 35, and a second via 36 (both shown in FIG. (see), a substrate 160 is provided.
  • the substrate 160 is configured as a component that supports the semiconductor laser element 40.
  • the substrate 160 includes an insulating substrate 160A made of, for example, black epoxy resin.
  • the insulating substrate 160A can be formed of a heat-resistant material such as engineered plastic.
  • the structure formed on the substrate surface 21 such as the wiring such as the first wiring 31 of the first embodiment (see FIG. 2), and the external electrode (such as the first electrode 33) are described.
  • the substrate 160 includes a first conductive part 180 and a second conductive part 190 formed of a conductive material in place of the above-mentioned wiring and external electrode configuration.
  • the first conductive part 180 and the second conductive part 190 are formed of, for example, a metal frame. In one example, a copper frame is used for the first conductive part 180 and the second conductive part 190.
  • a plating film may be provided on the surface of the frame configured as the first conductive part 180 and the second conductive part 190.
  • the plating film include Ag plating and Ni/Pd/Au plating.
  • the first conductive part 180 and the second conductive part 190 are provided on the insulating substrate 160A.
  • the substrate 160 of the ninth embodiment includes the first conductive part 180, the second conductive part 190, and the insulating substrate 160A.
  • the substrate 160 has a rectangular outer shape with the X-axis direction being the lateral direction and the Y-axis direction being the longitudinal direction.
  • the substrate 160 has a substrate front surface 161 and a substrate back surface 162 facing oppositely to each other in the Z-axis direction, and first to fourth substrate side surfaces 163 to 166 that connect the substrate front surface 161 and the substrate back surface 162.
  • the first substrate side surface 163 and the second substrate side surface 164 constitute both end surfaces of the substrate 160 in the Y-axis direction.
  • each of the first substrate side surface 163 and the second substrate side surface 164 extends in the X-axis direction.
  • the third substrate side surface 165 and the fourth substrate side surface 166 constitute both end surfaces of the substrate 160 in the X-axis direction. In plan view, each of the third substrate side surface 165 and the fourth substrate side surface 166 extends in the Y-axis direction.
  • the insulating substrate 160A holds both the first conductive part 180 and the second conductive part 190.
  • the insulating substrate 160A is integrally formed with the first conductive part 180 and the second conductive part 190 by resin molding. That is, the insulating substrate 160A is a molded resin that holds both the first conductive part 180 and the second conductive part 190.
  • the insulating substrate 160A has a bottom wall portion 171 and a side wall portion 172.
  • the bottom wall portion 171 and the side wall portion 172 are integrally formed.
  • the bottom wall portion 171 is formed into a flat plate shape whose thickness direction is in the Z-axis direction. In other words, the Z-axis direction can also be said to be the thickness direction of the substrate 160.
  • the bottom wall portion 171 has a substrate front surface 161 and a substrate back surface 162.
  • the substrate surface 161 is configured as a surface of the bottom wall portion 171 facing in the +Z direction.
  • the substrate back surface 162 is configured as a surface of the bottom wall portion 171 facing in the ⁇ Z direction.
  • the bottom wall portion 171 is provided with a first conductive portion 180 and a second conductive portion 190.
  • the first conductive part 180 and the second conductive part 190 penetrate the bottom wall part 171 in the Z-axis direction.
  • the side wall portion 172 is provided on the bottom wall portion 171. As shown in FIG. 37, the side wall portion 172 surrounds the semiconductor laser element 40 in plan view.
  • the side wall portion 172 includes a pair of first side wall portions 172A that are spaced apart from each other, and a second side wall portion 172B that connects the pair of first side wall portions 172A.
  • the pair of first side wall portions 172A and second side wall portions 172B are integrally formed.
  • the pair of first side wall portions 172A are spaced apart from each other in the X-axis direction. In plan view, each first side wall portion 172A extends in the Y-axis direction, that is, in the longitudinal direction of the substrate 160.
  • the second side wall portion 172B extends in the X-axis direction, that is, in the lateral direction of the substrate 160.
  • the second side wall portion 172B is arranged closer to the second substrate side surface 164 of the substrate 160 than the semiconductor laser element 40 is.
  • the insulating substrate 160A of the ninth embodiment has a structure in which a portion corresponding to the substrate 20 (see FIG. 5) of the first embodiment and a portion corresponding to the side wall 60 (see FIG. 5) are integrated. It is.
  • the first conductive part 180 provided on the bottom wall part 171 has a first conductive surface 181 and a first conductive back surface 182 facing oppositely to each other in the Z-axis direction.
  • the first conductive surface 181 faces the same side as the substrate front surface 161 and the first conductive back surface 182 faces the same side as the substrate back surface 162.
  • the first conductive surface 181 is exposed from the bottom wall portion 171 and is formed flush with the substrate surface 161 in the illustrated example.
  • the first conductive back surface 182 is exposed from the bottom wall portion 171 and is formed flush with the substrate back surface 162 in the illustrated example.
  • the first conductive surface 181 corresponds to a "conductive surface".
  • the first conductive part 180 includes a first mounting part 183 and a plurality (for example, three) of first hanging lead parts 184 extending from the side edge of the first mounting part 183.
  • first mounting portion 183 is a portion of the first conductive portion 180 exposed from the substrate surface 161, and corresponds to the first wiring in the first embodiment. Therefore, it can be said that the first conductive section 180 includes the first wiring.
  • the first conductive back surface 182 exposed from the substrate back surface 162 corresponds to the first electrode of the first embodiment. Therefore, it can be said that the first conductive part 180 includes the first electrode.
  • the semiconductor laser element 40 is mounted on the first mounting section 183 (first conductive surface 181) of the first conductive section 180. More specifically, the semiconductor laser element 40 is bonded to the surface of the first conductive surface 181 of the first mounting portion 183 exposed from the bottom wall portion 171 using a conductive bonding material SD. Therefore, it can be said that the semiconductor laser element 40 is mounted on the first conductive section 180 (first mounting section 183).
  • the three first hanging lead parts 184 extend from the side edge of the first mounting part 183 on the first board side surface 163 side, the side edge part on the third board side surface 165 side, and the side edge on the fourth board side surface 166 side. It is extending. Therefore, the three first suspension lead parts 184 are exposed from the first substrate side surface 163, the third substrate side surface 165, and the fourth substrate side surface 166.
  • the first suspension lead portion 184 extending from the side edge of the first mounting portion 183 on the side of the first substrate side surface 163 is also exposed from the substrate surface 161 of the bottom wall portion 171 .
  • the first hanging lead portion 184 extending from the side edge portions on the side of the third substrate side surface 165 and the fourth substrate side surface 166 is provided at a position overlapping with the side wall portion 172 in plan view.
  • the second conductive part 190 is arranged closer to the second substrate side surface 164 than the first conductive part 180. As shown in FIG. 38, the second conductive part 190 has a second conductive surface 191 and a second conductive back surface 192 facing oppositely to each other in the Z-axis direction.
  • the second conductive surface 191 faces the same side as the substrate front surface 161 and the second conductive back surface 192 faces the same side as the substrate back surface 162.
  • the second conductive surface 191 is exposed from the bottom wall portion 171 and is formed flush with the substrate surface 161 in the illustrated example.
  • the second conductive back surface 192 is exposed from the bottom wall portion 171 and is formed flush with the substrate back surface 162 in the illustrated example.
  • the substrate surface 161 of the substrate 160 includes the insulating substrate surface of the insulating substrate 160A, the first conductive surface 181 of the first conductive part 180, and the second conductive surface 191 of the second conductive part 190.
  • the insulating substrate surface is a surface of the bottom wall portion 171 of the insulating substrate 160A that faces the same side as the substrate surface 161.
  • the substrate back surface 162 of the substrate 160 includes the insulating substrate back surface of the insulating substrate 160A, the first conductive back surface 182 of the first conductive part 180, and the second conductive back surface 192 of the second conductive part 190.
  • the insulating substrate back surface is a surface of the bottom wall portion 171 of the insulating substrate 160A that faces the same side as the substrate back surface 162.
  • the second conductive part 190 includes a second mounting part 193 and a plurality (for example, three) of second hanging lead parts 194 extending from the side edge of the second mounting part 193.
  • the second mounting portion 193 is a portion of the second conductive portion 190 exposed from the substrate surface 161, and corresponds to the second wiring in the first embodiment. Therefore, it can be said that the second conductive section 190 includes the second wiring.
  • the second conductive back surface 192 exposed from the substrate back surface 162 corresponds to the second electrode of the first embodiment. Therefore, it can be said that the second conductive part 190 includes a second electrode.
  • the anode electrode 47 of the semiconductor laser element 40 is electrically connected to the second mounting portion 193 by a wire W. More specifically, the wire W connected to the anode electrode 47 is joined to the surface of the second conductive surface 191 of the second mounting section 193 exposed from the bottom wall section 171.
  • the wire W is made of the same material as the wire W of the first embodiment, for example.
  • the three second hanging lead parts 194 extend from the side edge of the second mounting part 193 on the second board side surface 164 side, the side edge part on the third board side surface 165 side, and the side edge on the fourth board side surface 166 side. It is extending. Therefore, the three second hanging lead portions 194 are exposed from the second substrate side surface 164, the third substrate side surface 165, and the fourth substrate side surface 166.
  • the second suspension lead portion 194 extending from the side edges of the second substrate side surface 164, the third substrate side surface 165, and the fourth substrate side surface 166 is provided at a position overlapping with the side wall portion 172 in plan view.
  • the semiconductor laser element 40 is sealed with a sealing resin 50.
  • the sealing resin 50 is provided in a space surrounded by the bottom wall part 171 and the side wall part 172. Therefore, the second sealing end surface 54 of the sealing resin 50 is in contact with the second side wall portion 172B, and both the third sealing end surface 55 and the fourth sealing end surface 56 are in contact with the pair of first side wall portions 172A. ing.
  • the first sealed end surface 53 is exposed from the side wall portion 172. In the illustrated example, the first sealing end surface 53 is formed flush with the first substrate side surface 163. Further, the sealing resin 50 is mixed with a diffusion material 57 as in the first embodiment.
  • the area of the portion of the first mounting portion 183 exposed from the bottom wall portion 171 is larger than the area of the semiconductor laser element 40 in plan view. More specifically, the length of the first mounting portion 183 in the X-axis direction is longer than the length of the semiconductor laser device 40 in the X-axis direction, and the length of the first mounting portion 183 in the Y-axis direction is longer than the length of the semiconductor laser device 40 in the X-axis direction. It is longer than the length in the Y-axis direction.
  • the semiconductor laser element 40 is arranged in a portion of the first mounting section 183 closer to the second mounting section 193 (second substrate side surface 164). More specifically, the center of the semiconductor laser element 40 in the Y-axis direction is located closer to the second mounting portion 193 (second substrate side surface 164) than the center of the first mounting portion 183 in the Y-axis direction.
  • the first mounting section 183 includes a first end surface 183A and a second end surface 183B that constitute both ends of the first mounting section 183 in the Y-axis direction.
  • the first end surface 183A is the end surface of the first mounting section 183 that is closer to the first board side surface 163, and the second end surface 183B is the end surface of the first mounting section 183 that is closer to the second board side surface 164.
  • the first end surface 183A is arranged inside the first substrate side surface 163 (closer to the second substrate side surface 164).
  • the first end surface 183A is closer to the first substrate side surface 163 than the center between the first substrate side surface 163 and the first element side surface 43 (first light emitting surface LS1) of the semiconductor laser element 40 in the Y-axis direction in a plan view. It is located in
  • the length of the first mounting portion 183 in the Y-axis direction is longer than the length of the semiconductor laser device 40 in the Y-axis direction, so the first mounting portion 183 is connected to the first light emitting surface LS1 of the semiconductor laser device 40. It includes a first extending portion 183C that is a portion between the first end surface 183A and a second extending portion 183D that is a portion between the second light emitting surface LS2 and the second end surface 183B.
  • the first mounting portion 183 (first conductive surface 181) is a portion extending from the first device side surface 43 (first light emitting surface LS1) of the semiconductor laser device 40 toward the first sealing end surface 53. It can also be said that it has a certain first extending portion 183C.
  • the first extending portion 183C includes a first end surface 183A.
  • the second extending portion 183D includes a second end surface 183B.
  • the distance DA1 between the first element side surface 43 (first light emitting surface LS1) of the semiconductor laser element 40 and the first end surface 183A of the first mounting section 183 in the Y-axis direction is equal to the second element side surface 44 of the semiconductor laser element 40. and the second end surface 183B of the first mounting portion 183 in the Y-axis direction.
  • the distance DA1 can be said to be the length of the first extension part 183C in the Y-axis direction
  • the distance DA2 can be said to be the length of the second extension part 183D in the Y-axis direction.
  • the first light emitting surface LS1 of the semiconductor laser element 40 faces the same side as the first sealing end surface 53.
  • the laser light emitted from the first light emitting surface LS1 of the semiconductor laser element 40 is diffused (scattered) by the diffusing material 57.
  • the laser light includes laser light directed toward the substrate surface 161.
  • the first extension portion 183C reflects at least a portion of the laser beam directed toward the substrate surface 161.
  • the reflected laser light passes through the first sealing end face 53 or the sealing surface 51 and is emitted to the outside of the semiconductor laser device 10 .
  • the semiconductor laser device 10 can be said to include the first reflecting section 70 that reflects at least a portion of the laser light emitted from the first light emitting surface LS1 of the semiconductor laser element 40 and directed toward the substrate surface 161.
  • the first extending portion 183C of the first mounting portion 183 constitutes the first reflecting portion 70.
  • the first mounting section 183 has a portion extending from the first light emitting surface LS1 toward the first sealing end surface 53 as the first reflecting section 70.
  • FIGS. 39 to 42 show a configuration in which four semiconductor laser devices 10 can be manufactured at once for convenience, the present invention is not limited to this, and the configuration can be configured so that more semiconductor laser devices 10 can be manufactured at once. You can.
  • the method for manufacturing the semiconductor laser device 10 includes a step of preparing a lead frame 980, a step of forming an insulating substrate 960, a step of mounting the semiconductor laser element 40, a step of forming the wire W, and a step of forming the sealing resin 950. It includes a step of forming and a step of singulating.
  • a lead frame 980 including a plurality of first conductive parts 180 and a plurality of second conductive parts 190 is prepared.
  • Lead frame 980 is made of a material containing Cu, for example.
  • the lead frame 980 includes a plurality of first conductive parts 180 and a plurality of second conductive parts 190. Two first conductive parts 180 adjacent in the X-axis direction are connected to each other by a first hanging lead part 184. Two second conductive parts 190 adjacent in the X-axis direction are connected by a second hanging lead part 194. The first conductive part 180 and the second conductive part 190 that are adjacent in the Y-axis direction are connected by a first hanging lead part 184 and a second hanging lead part 194.
  • the lead frame 980 has a frame portion. The frame portion connects the plurality of first conductive parts 180 and the plurality of second conductive parts 190.
  • the insulating substrate 960 is formed by resin molding so as to be integrated with the lead frame 980.
  • Insulating substrate 960 supports lead frame 980.
  • the insulating substrate 960 is formed in a size that includes a plurality of substrates 160 (insulating substrates 160A).
  • the insulating substrate 960 is made of, for example, black epoxy resin.
  • Insulating substrate 960 includes a plurality of bottom wall sections 971 and a plurality of side wall sections 972. The number of each of the bottom wall part 971 and the side wall part 972 is set according to the number of substrates 160 (insulating substrates 160A) in the insulating substrate 960.
  • a unit side wall surrounding the first mounting section 183 and the second mounting section 193 is formed by side wall sections 972 that are adjacent in plan view.
  • the step of mounting the semiconductor laser device 40 is a step of mounting the semiconductor laser device 40 on the first mounting portion 183 of the first conductive portion 180.
  • the semiconductor laser element 40 is die-bonded to the first mounting section 183 of the first conductive section 180, for example.
  • the cathode electrode 48 of the semiconductor laser element 40 and the first conductive part 180 are electrically connected.
  • the wire W that electrically connects the anode electrode 47 of the semiconductor laser element 40 and the second mounting section 193 of the second conductive section 190 is formed.
  • the wire W is a bonding wire formed by a wire bonding device.
  • first bonding is performed on the second mounting portion 193 side of the wire W, and second bonding is performed on the anode electrode 47 side of the semiconductor laser element 40.
  • the sealing resin 950 is formed in a space surrounded by an insulating substrate 960 and a unit side wall formed by a plurality of side wall parts 972. It can be said that the side wall portion 972 (unit side wall) surrounds the sealing resin 950.
  • the sealing resin 950 is formed by resin molding, for example.
  • the sealing resin 950 seals the first mounting section 183, the second mounting section 193, the semiconductor laser element 40, and the wire W.
  • the sealing resin 950 is made of a translucent material.
  • the sealing resin 950 is formed of a material containing at least one of silicone resin, epoxy resin, and acrylic resin.
  • the sealing resin 950 is formed by, for example, transfer molding or compression molding. Note that the sealing resin 950 may be filled in a space surrounded by the bottom wall portion 971 of the insulating substrate 960 and the unit side walls of the side wall portions 972 by potting. Note that the sealing resin 950 includes a diffusion material 57 (see FIG. 42).
  • both the side wall portion 972 and the bottom wall portion 971 are cut along the cutting line CL in FIG. 41 by a dicing blade.
  • the substrate 160 and the sealing resin 50 are formed.
  • the semiconductor laser element 40 is mounted on the first wiring 31 so that the first light emitting surface LS1 that emits laser light emits the laser light toward the first sealing end surface 53 of the sealing resin 50. That is, the semiconductor laser element 40 is mounted on the first wiring 31 so that the first light emitting surface LS1 faces the same side as the first sealed end surface 53.
  • the semiconductor laser device 10 includes a first conductive section 180.
  • the insulating substrate 160A is a molded resin that holds the first conductive part 180.
  • the insulating substrate 160A is integrally formed with a bottom wall portion 171 that holds the first conductive portion 180 and a side wall portion 172 that rises from the bottom wall portion 171 and surrounds the sealing resin 50 in a plan view.
  • the number of man-hours for manufacturing the insulating substrate 160A can be reduced compared to a configuration in which the bottom wall portion 171 and the side wall portion 172 are formed individually and then bonded together. , the substrate 160 can be easily manufactured.
  • the first conductive surface 181 (first mounting portion 183) of the first conductive portion 180 serves as the first reflective portion 70, and the first conductive surface 181 (first mounting portion 183) of the first conductive portion 180 is connected to It has a portion extending toward the sealing end surface 53.
  • the first reflecting section 70 can be configured by the first conductive section 180 without adding any parts dedicated to the first reflecting section 70. Therefore, an increase in the number of parts of the semiconductor laser device 10 can be suppressed.
  • a semiconductor laser device 10 according to a tenth embodiment will be described with reference to FIGS. 43 to 45.
  • the semiconductor laser device 10 of the tenth embodiment differs from the semiconductor laser device 10 of the first embodiment in that a submount substrate is interposed between the semiconductor laser element 40 and the first wiring 31.
  • points different from the first embodiment will be described in detail, and components common to those of the semiconductor laser device 10 of the first embodiment are denoted by the same reference numerals, and their explanations will be omitted. Note that in FIG. 43, the diffusion material 57 in the sealing resin 50 is omitted for easy understanding of the drawing.
  • a submount substrate 200 is interposed between the semiconductor laser element 40 and the first wiring 31.
  • the submount substrate 200 electrically connects the semiconductor laser element 40 and the first wiring 31. More specifically, the submount substrate 200 electrically connects the cathode electrode 48 of the semiconductor laser element 40 and the first wiring 31.
  • the submount substrate 200 is made of a material having a coefficient of thermal expansion closer to that of the semiconductor laser element 40 than that of the first wiring 31, for example. That is, the difference in thermal expansion coefficient between the submount substrate 200 and the semiconductor laser element 40 is smaller than the difference in the thermal expansion coefficient between the first wiring 31 and the semiconductor laser element 40.
  • the semiconductor laser element 40 is formed of a Si substrate, its thermal expansion coefficient is approximately 2.6 ⁇ 10 ⁇ 6 /K.
  • the first wiring 31 is formed of a material containing copper, its coefficient of thermal expansion is approximately 16.5 ⁇ 10 ⁇ 6 /K. Therefore, the submount substrate 200 is formed of a material with a coefficient of thermal expansion smaller than 16.5 ⁇ 10 ⁇ 6 /K.
  • submount substrate 200 is made of alumina. In this case, the coefficient of thermal expansion of the submount substrate 200 is approximately 7.2 ⁇ 10 ⁇ 6 /K. Furthermore, the submount substrate 200 may be made of aluminum nitride. In this case, the coefficient of thermal expansion of the submount substrate 200 is approximately 4.6 ⁇ 10 ⁇ 6 /K.
  • the submount substrate 200 is formed into a flat plate shape with the thickness direction in the Z-axis direction.
  • the shape of the submount substrate 200 in plan view is a rectangular shape with the Y-axis direction as the longitudinal direction and the X-axis direction as the lateral direction.
  • the submount substrate 200 is formed to be one size larger than the semiconductor laser element 40 in plan view.
  • the submount substrate 200 has a front surface 201, a back surface 202, and first to fourth side surfaces 203 to 206 connecting the front surface 201 and the back surface 202.
  • the front surface 201 faces the same side as the substrate front surface 21, and the back surface 202 faces the same side as the substrate back surface 22.
  • the back surface 202 faces the first wiring 31.
  • the first to fourth side surfaces 203 to 206 are surfaces that intersect with both the front surface 201 and the back surface 202.
  • each of the first to fourth side surfaces 203 to 206 is a surface that is perpendicular to the front surface 201 and the back surface 202.
  • the first side surface 203 and the second side surface 204 constitute both end surfaces of the submount substrate 200 in the Y-axis direction.
  • the first side surface 203 faces the same side as the first substrate side surface 23, and the second side surface 204 faces the same side as the second substrate side surface 24.
  • the third side surface 205 and the fourth side surface 206 constitute both end surfaces in the X-axis direction of the submount substrate 200.
  • the third side surface 205 faces the same side as the third substrate side surface 25, and the fourth side surface 206 faces the same side as the fourth substrate side surface 26.
  • the semiconductor laser device 10 includes a front side wiring 207 provided on the front side 201 of the submount substrate 200, a back side wiring 208 provided on the back side 202, and a via 209 connecting the front side wiring 207 and the back side wiring 208. and.
  • Each of the front side wiring 207 and the back side wiring 208 is formed of a material containing copper, for example.
  • Via 209 is formed of a material containing Cu, for example.
  • the front-side wiring 207 is formed into a rectangular shape that is one size smaller than the submount substrate 200 in plan view.
  • the back side wiring 208 is formed in a rectangular shape with the same size as the front side wiring 207 in plan view.
  • the front side wiring 207 is formed on the front surface 201 of the submount substrate 200.
  • a plurality of vias 209 are provided, for example.
  • the vias 209 are formed by two rows of four vias 209 arranged in a row spaced apart from each other in the Y-axis direction and spaced apart from each other in the X-axis direction.
  • each of the front-side wiring 207 and the back-side wiring 208 can be changed arbitrarily.
  • the area of the front-side wiring 207 and the area of the back-side wiring 208 may be different from each other in plan view.
  • the number of vias 209 can be changed arbitrarily.
  • the submount substrate 200 is bonded to the first wiring 31 using a conductive bonding material SD. That is, the submount substrate 200 is mounted on the first wiring 31.
  • the submount substrate 200 is arranged closer to the second end surface 31B of the first wiring 31 in the Y-axis direction.
  • the distance DB1 between the submount board 200 and the first end surface 31A of the first wiring 31 in the Y-axis direction is equal to the distance DB1 between the submount board 200 and the second end surface 31B of the first wiring 31.
  • the distance between DB2 and DB2 in the Y-axis direction is greater than DB2.
  • the semiconductor laser element 40 is mounted on a submount substrate 200. More specifically, the cathode electrode 48 of the semiconductor laser element 40 is bonded to the front side wiring 207 of the submount substrate 200 using a conductive bonding material SD. Thereby, the cathode electrode 48 is electrically connected to the front side wiring 207. Since the front side wiring 207 is electrically connected to the back side wiring 208 via the via 209, the cathode electrode 48 is electrically connected to the back side wiring 208. Since the back side wiring 208 is electrically connected to the first wiring 31 by the conductive bonding material SD, the cathode electrode 48 is electrically connected to the first wiring 31. In the tenth embodiment, the semiconductor laser element 40 is arranged at the center of the submount substrate 200 in the Y-axis direction.
  • the submount substrate 200, the semiconductor laser element 40, and the wire W are sealed with a sealing resin 50.
  • the first side surface 203 of the submount substrate 200 is arranged inside the first sealing end surface 53 of the sealing resin 50 (closer to the semiconductor laser element 40).
  • the semiconductor laser device 10 does not include the first reflection section 70 (see FIG. 5). That is, the laser light emitted from the first light emitting surface LS1 of the semiconductor laser element 40 is emitted from the first sealing end surface 53 and the sealing surface 51 via the sealing resin 50.
  • the semiconductor laser device 10 further includes a submount substrate 200 that is interposed between the first wiring 31 and the semiconductor laser element 40 and electrically connects the first wiring 31 and the semiconductor laser element 40.
  • the submount substrate 200 is made of a material having a coefficient of thermal expansion closer to that of the semiconductor laser element 40 than that of the first wiring 31.
  • the force applied to the semiconductor laser element 40 due to the difference in thermal expansion coefficient between the first wiring 31 and the semiconductor laser element 40 can be reduced. Therefore, it is possible to reduce the influence on the electrical characteristics of the semiconductor laser element 40 due to temperature changes.
  • the distance DB1 between the submount board 200 and the first end surface 31A of the first wiring 31 in the Y-axis direction is the distance DB1 between the submount board 200 and the second end surface 31B of the first wiring 31 in the Y-axis direction.
  • the distance between DB2 is greater than DB2.
  • the semiconductor laser element 40 can be further separated from the first sealed end surface 53. Therefore, the laser light emitted from the first light emitting surface LS1 of the semiconductor laser element 40 is easily diffused (scattered) by the diffusion material 57 within the sealing resin 50. Therefore, the directivity angle of the laser light emitted from the semiconductor laser device 10 can be further expanded.
  • the first side electrode 37 and the second side electrode 38 of the third embodiment may be added to the second and fourth to tenth embodiments.
  • the first side electrode 37 and the first end surface through hole 39A are connected to each other.
  • the second side electrode 38 and the second end surface through hole 39B are connected to each other.
  • the second side electrode 38 is connected to the third substrate side surface 25 and the fourth substrate side surface 26, for example, continuously with the drive circuit electrode 142. It may be formed on at least one of the following.
  • the semiconductor laser device 10 may further include a gate side electrode formed on the second substrate side surface 24 continuously with the gate electrode 143G.
  • At least one of the first end surface through hole 39A and the second end surface through hole 39B of the fourth embodiment may be added to the second and fifth to tenth embodiments.
  • a reflector 80 may be placed on the first end surface through hole 39A.
  • the resist 90 may be omitted.
  • the first end surface through hole 39A may be provided on at least one of the first substrate side surface 23 and the second substrate side surface 24.
  • the second, fifth, sixth, and eighth to tenth embodiments include the drive circuit element 130 of the seventh embodiment, the drive circuit wiring 140, the gate wiring 141G, the source wiring 141S, the drive circuit electrode 142, and the gate An electrode 143G and a source electrode 143S may be added.
  • the semiconductor laser device 10 may include, for example, a drive circuit via 144 as a configuration for electrically connecting the drive circuit wiring 140 and the drive circuit electrode 142.
  • the semiconductor laser device 10 may include, for example, a gate via 145G to electrically connect the gate wiring 141G and the gate electrode 143G.
  • the semiconductor laser device 10 may include, for example, a source via 145S to electrically connect the source wiring 141S and the source electrode 143S.
  • the photodiode 110, third wiring 100, and third electrode 101 of the fifth embodiment may be added to the sixth to ninth embodiments.
  • the semiconductor laser device 10 may include a via 102 to electrically connect the third wiring 100 and the third electrode 101.
  • the semiconductor laser device 120 of the sixth embodiment may be applied instead of the semiconductor laser device 40 of the seventh to tenth embodiments.
  • the configuration of the side wall 60 of the eighth embodiment may be applied to the ninth and tenth embodiments. That is, in the ninth embodiment, the second side wall portion 172B may be omitted from the side wall portion 172.
  • the submount substrate 200 of the tenth embodiment may be applied to the ninth embodiment.
  • the submount substrate 200 is bonded to the first mounting portion 183 using the conductive bonding material SD.
  • the semiconductor laser element 40 is bonded to the submount substrate 200 using a conductive bonding material SD.
  • a reflective film 210 may be formed on the substrate surface 21 as the first reflective section 70.
  • the semiconductor laser device 10 includes the reflective film 210 formed on the substrate surface 21 as the first reflective section 70 .
  • the reflective film 210 is disposed closer to the first substrate side surface 23 than the first wiring 31 on the substrate surface 21 .
  • the reflective film 210 is arranged apart from the first wiring 31 in the Y-axis direction.
  • the reflective film 210 may be formed of a material containing copper like the first wiring 31, or may be formed of a material different from the material of the first wiring 31 (for example, Al).
  • the reflective film 210 may be in an electrically floating state, for example.
  • the length of the first extending portion 31C of the first wiring 31 in the Y-axis direction is shorter than the length of the first extending portion 31C of the first embodiment in the Y-axis direction. Further, the first extending portion 31C may be omitted.
  • the thickness of the reflective film 210 is equal to the thickness of the first wiring 31. Note that the thickness of the reflective film 210 can be changed arbitrarily, and may be thicker than the thickness of the first wiring 31, for example.
  • the length of the reflective film 210 in the X-axis direction is equal to the length of the first wiring 31 in the X-axis direction. Note that the length of the reflective film 210 in the X-axis direction can be changed arbitrarily. The length of the reflective film 210 in the X-axis direction may be longer than the length of the first wiring 31 in the X-axis direction. Further, the length of the reflective film 210 in the X-axis direction may be shorter than the length of the first wiring 31 in the X-axis direction.
  • the length of the reflective film 210 in the X-axis direction is shorter than the length of the first wiring 31 in the X-axis direction, for example, the length of the reflective film 210 in the X-axis direction is equal to the length of the semiconductor laser element 40 in the X-axis direction. It is good if it is above.
  • the position of the reflector 80 can be changed arbitrarily.
  • the reflector 80 may be disposed between the first light emitting surface LS1 of the semiconductor laser element 40 and the first substrate side surface 23 of the substrate 20 in the Y-axis direction in plan view. good.
  • the reflector 80 may be arranged between the first light emitting surface LS1 and the first sealing end surface 53 of the sealing resin 50 in the Y-axis direction in a plan view. That is, the reflector 80 may be entirely sealed with the sealing resin 50.
  • the reflector 80 may be arranged so that a portion thereof protrudes from the first substrate side surface 23. Further, the reflector 80 may be arranged so that a portion thereof protrudes from the first sealed end surface 53.
  • the height dimension of the reflector 80 (the size of the reflector 80 in the Z-axis direction) can be changed arbitrarily.
  • the height dimension of the reflector 80 may be smaller than the thickness of the semiconductor laser element 40 (the size of the semiconductor laser element 40 in the Z-axis direction).
  • the substrate 160 may have a reflector section 173.
  • the reflector section 173 is formed on the bottom wall section 171.
  • the reflector portion 173 may be formed integrally with the bottom wall portion 171.
  • the reflector section 173 is made of, for example, black epoxy resin, like the bottom wall section 171.
  • the reflector portion 173 has an inclined surface 173A.
  • the inclined surface 173A is inclined upward toward the first substrate side surface 23.
  • a reflective film 174 is formed on the inclined surface 173A.
  • the reflective film 174 is formed of, for example, a metal film. Examples of the metal film include a Cu film and an Al film. Note that for the reflective film 174, a resist with high reflectance may be used instead of a metal film. As the resist with high reflectance, for example, a white resist may be used.
  • the reflector 80 may be integrated with the first mounting section 183. That is, in the method for manufacturing the semiconductor laser device 10, the reflector 80 may be integrally formed with the lead frame 980 in the step of preparing the lead frame 980. More specifically, the reflector 80 is integrally formed with each first conductive part 180.
  • the length of the submount substrate 200 in the Y-axis direction may be increased.
  • the semiconductor laser element 40 is arranged closer to the second side surface 204 with respect to the submount substrate 200 in plan view. That is, in plan view, the distance between the first light emitting surface LS1 of the semiconductor laser device 40 and the first side surface 203 of the submount substrate 200 in the Y-axis direction is This is larger than the distance between the light emitting surface LS2) and the second side surface 204 of the submount substrate 200 in the Y-axis direction.
  • the front side wiring 207 can have a long first extension portion 207A extending from the first light emitting surface LS1 to the first side surface 203 in plan view.
  • the first extending portion 207A constitutes the first reflecting portion 70.
  • the front side wiring 207 has a portion (first extension portion 207A) extending from the first light emitting surface LS1 toward the first sealing end surface 53 as the first reflection portion 70.
  • the front side wiring 207 corresponds to the "connection wiring".
  • the semiconductor laser device 10 may include a reflector 80 as the first reflecting section 70.
  • the reflector 80 may be mounted on the surface 201 of the submount substrate 200, for example. Further, the reflector 80 may be mounted, for example, on the front side wiring 207 of the submount substrate 200.
  • the semiconductor laser device 10 may include a reflective film formed on the surface 201 of the submount substrate 200 as the first reflective section 70.
  • the reflective film is formed of a metal film such as a Cu film or an Al film.
  • the reflective film is arranged closer to the first side surface 203 than the front side wiring 207, for example.
  • the reflective film is, for example, in an electrically floating state.
  • the first reflecting section 70 may be omitted from the semiconductor laser device 10. More specifically, the first extension portion 31C of the first wiring 31 may be formed so that the laser light directed toward the substrate surface 21 out of the laser light from the semiconductor laser element 40 does not hit the first extension portion 31C. Alternatively, the first extending portion 31C may be omitted from the first wiring 31. In this case, of the laser light from the semiconductor laser element 40, the laser light directed toward the substrate surface 21 may be emitted from the first sealing end surface 53 of the sealing resin 50 without being reflected on the substrate surface 21.
  • the distance D2 in the X-axis direction from the second light-emitting surface LS2 of the semiconductor laser element 40 to the second end surface 31B of the first wire 31 is the distance D2 in the X-axis direction from the first light-emitting surface LS1 to the first end surface 31A of the first wire 31. It is equal to the distance D1 in the direction.
  • the second extending portion 31D constitutes the second reflecting portion 150.
  • the second laser light emitted from the second light emitting surface LS2 of the semiconductor laser element 40 is diffused (scattered) by the diffusing material 57.
  • the second laser light includes laser light directed toward the substrate surface 21.
  • the second extension 31D of the first wiring 31 reflects at least a portion of the laser beam directed toward the substrate surface 21.
  • the reflected laser light passes through the second sealing end face 54 or the sealing surface 51 and is emitted to the outside of the semiconductor laser device 10 .
  • the semiconductor laser device 10 can be said to include the second reflection section 150 that reflects at least a portion of the laser light emitted from the second light emitting surface LS2 of the semiconductor laser element 40 and directed toward the substrate surface 21.
  • the second extending portion 31D of the first wiring 31 constitutes the second reflecting portion 150. That is, it can be said that the first wiring 31 has a portion extending from the second light emitting surface LS2 toward the second sealing end surface 54 as the second reflecting portion 150 in plan view.
  • the laser beam of the second laser beam that is directed toward the substrate surface 21 is also reflected by the second wiring 32 .
  • the reflected laser light passes through the second sealing end face 54 or the sealing surface 51 and is emitted to the outside of the semiconductor laser device 10 . Therefore, it can be said that the second wiring 32 also constitutes the second reflection section 150.
  • a reflective film 220 may be formed on the substrate surface 21 between the first wiring 31 and the second wiring 32 in the Y-axis direction.
  • the reflective film 220 constitutes the second reflective section 150.
  • the reflective film 220 may be formed of a material containing copper like the first wiring 31 and the second wiring 32, or may be formed of a material different from the material of the first wiring 31 and the second wiring 32 (for example, Al). may be done.
  • the reflective film 220 may be in an electrically floating state, for example.
  • the area of the reflective film 220 in plan view is equal to the area of the second wiring 32. More specifically, the length of the reflective film 220 in the X-axis direction is equal to the length of the second wiring 32 in the X-axis direction. The length of the reflective film 220 in the Y-axis direction is equal to the length of the second wiring 32 in the Y-axis direction.
  • the length of the reflective film 220 in the X-axis direction can be changed arbitrarily.
  • the length of the reflective film 220 in the X-axis direction may be longer than the length of the second wiring 32 in the X-axis direction.
  • the length of the reflective film 220 in the X-axis direction may be longer than the length of the first wiring 31 in the X-axis direction.
  • the length of the reflective film 220 in the X-axis direction may be shorter than the length of the second wiring 32 in the X-axis direction.
  • the length of the reflective film 220 in the X-axis direction may be shorter than the length of the first wiring 31 in the X-axis direction.
  • the length of the reflective film 220 in the X-axis direction is preferably equal to or longer than the length of the semiconductor laser element 40 in the X-axis direction.
  • the length of the reflective film 220 in the Y-axis direction can be changed arbitrarily.
  • the length of the reflective film 220 in the Y-axis direction may be longer than the length of the second wiring 32 in the Y-axis direction.
  • the length of the reflective film 220 in the Y-axis direction may be shorter than the length of the second wiring 32 in the Y-axis direction.
  • a reflector 230 as the second reflection section 150 may be arranged between the semiconductor laser element 40 and the second wiring 32 in the Y-axis direction.
  • Reflector 230 is provided on substrate surface 21 .
  • the reflector 230 is arranged on the first wiring 31, as shown in FIG. More specifically, the reflector 230 is arranged on the second extending portion 31D of the first wiring 31.
  • the reflector 230 is not limited to being placed on the first wiring 31, but may be placed on the substrate surface 21. In this case, the reflector 230 is arranged in a portion of the substrate surface 21 between the first wiring 31 and the second wiring 32 in the Y-axis direction.
  • the reflector 230 is made of a metal material such as Cu or Al.
  • the reflector 230 is bonded to the first wiring 31 with adhesive, for example.
  • the reflector 230 is sealed with a sealing resin 50.
  • the reflector 230 has a bottom surface 231 facing the substrate surface 21 (first wiring 31), a side surface 232 extending upward from the bottom surface 231, and a reflective surface 233 connecting the bottom surface 231 and the side surface 232.
  • the bottom surface 231 is a surface in contact with the adhesive, and is formed by a flat surface perpendicular to the thickness direction (Z-axis direction) of the substrate 20.
  • the side surface 232 extends upward from the edge of the bottom surface 231 in the Y-axis direction that is closer to the second substrate side surface 24 .
  • the reflective surface 233 connects the edge of the bottom surface 231 in the Y-axis direction that is closer to the semiconductor laser element 40 and the upper edge of the side surface 232 . Reflective surface 233 faces in a direction intersecting substrate surface 21 .
  • the reflective surface 233 is an inclined surface that slopes upward toward the second substrate side surface 24 (as it moves away from the semiconductor laser element 40).
  • the angle of inclination of the reflective surface 233 is set according to the range of laser light emitted from the sealing resin 50. In one example, the inclination angle of the reflective surface 233 is greater than 0° and less than 45°. Here, the inclination angle of the reflective surface 233 is an acute angle formed by the bottom surface 231 and the reflective surface 233.
  • the height dimension (size in the Z-axis direction) of the side surface 232 is equal to the thickness dimension (size in the Z-axis direction) of the semiconductor laser element 40. Therefore, when viewed from the Y-axis direction, the reflective surface 233 is formed to overlap the entire surface of the first light emitting surface LS1.
  • the shape of the reflector 230 can be changed arbitrarily.
  • the height dimension of the reflector 230 (the size of the reflector 230 in the Z-axis direction) may be smaller than the thickness of the semiconductor laser element 40.
  • the angle of inclination of the reflector 230 may be smaller than the angle of inclination of the reflector 80 as the first reflecting section 70. That is, the inclination angles of the reflectors 80 and 230 may be set individually. As a result, the angle of inclination of reflector 80 and the angle of inclination of reflector 230 may be different from each other.
  • the arrangement position of the reflector 230 can be changed arbitrarily.
  • the reflector 230 may be arranged closer to the second substrate side surface 24 than the second wiring 32.
  • Reflector 230 is arranged, for example, on substrate surface 21. In this case, reflector 230 is bonded to substrate surface 21, for example by adhesive.
  • the reflector 230 may be arranged such that its side surface 232 is inside the second substrate side surface 24 (closer to the second wiring 32). When the reflector 230 is arranged closer to the second substrate side surface 24 than the second wiring 32, it can be said that the reflector 230 is arranged between the second wiring 32 and the second substrate side surface 24 in the Y-axis direction.
  • the reflector 230 is not limited to being placed on the substrate surface 21, but may be placed on the second wiring 32. In this case, the length of the second wiring 32 in the Y-axis direction is increased, and the reflector 230 is arranged in a portion of the second wiring 32 closer to the second substrate side surface 24 than the area where the wire W is bonded. You can.
  • the reflector 230 is bonded to the second wiring 32 with adhesive, for example.
  • the length of the submount substrate 200 in the Y-axis direction may be increased.
  • the semiconductor laser element 40 is arranged at the center of the submount substrate 200 in the Y-axis direction in plan view. That is, in plan view, the distance between the first light emitting surface LS1 of the semiconductor laser device 40 and the first side surface 203 of the submount substrate 200 in the Y-axis direction is It is equal to the distance between the light emitting surface LS2) and the second side surface 204 of the submount substrate 200 in the Y-axis direction.
  • the front side wiring 207 has a first extending portion 207A extending from the first light emitting surface LS1 to the first side surface 203 and a second extending portion 207B extending from the second light emitting surface LS2 to the second side surface 204 in plan view. Both can be kept for a long time.
  • the first extending portion 207A constitutes the first reflecting portion 70
  • the second extending portion 207B constitutes the second reflecting portion 150. That is, it can be said that the front-side wiring 207 has a portion (second extending portion 207B) extending from the second light emitting surface LS2 toward the second sealing end surface 54 as the second reflecting portion 150.
  • the front side wiring 207 corresponds to the "connection wiring".
  • the semiconductor laser device 10 may include a reflector 230 as the second reflection section 150.
  • the reflector 230 may be mounted on the surface 201 of the submount substrate 200, for example. Further, the reflector 230 may be mounted, for example, on the front side wiring 207 of the submount substrate 200.
  • the semiconductor laser device 10 may include a reflective film formed on the surface 201 of the submount substrate 200 as the second reflective section 150.
  • the reflective film is formed of a metal film such as a Cu film or an Al film.
  • the reflective film may be formed of a white insulating film with high reflectance.
  • the reflective film is arranged closer to the second side surface 204 than the front side wiring 207, for example.
  • the reflective film is, for example, in an electrically floating state.
  • the semiconductor laser device 10 may include a reflector 230 shown in FIG. 54 as the second reflection section 150.
  • the reflector 230 may have the shape shown in FIG. 55. Further, the reflector 230 may be arranged closer to the second substrate side surface 24 than the second wiring 32, as shown in FIG.
  • the semiconductor laser device 10 may include a reflector 80 (see FIG. 14) as the first reflecting section 70.
  • the reflector 80 may be placed closer to the first substrate side surface 23 (first sealed end surface 53) than the semiconductor laser element 40. Further, as shown in FIG. 47, the reflector 80 is arranged between the semiconductor laser element 40 and the first substrate side surface 23 (first sealing end surface 53) in the Y-axis direction. Good too.
  • the semiconductor laser device 10 may include a reflector 80 as the first reflective section 70.
  • the reflector 80 may be arranged so that its side surface 82 is flush with the first sealed end surface 53 (first substrate side surface 23). Further, the side surface 82 of the reflector 80 may be arranged inside (closer to the semiconductor laser element 40) than the first sealed end surface 53 (first substrate side surface 23). In this case, it can be said that the reflector 80 is disposed between the first sealed end surface 53 (first substrate side surface 23) and the semiconductor laser element 40 in the Y-axis direction.
  • the semiconductor laser device 10 may include a reflective film 210 (see FIG. 46) as the first reflective section 70.
  • the semiconductor laser device 10 of the present disclosure may include both the first reflecting section 70 and the second reflecting section 150.
  • Each of the configurations of the first reflecting section 70 and the second reflecting section 150 can be changed arbitrarily.
  • the semiconductor laser device 10 of the present disclosure may not include the first reflecting section 70 but may include the second reflecting section 150, or may include both the first reflecting section 70 and the second reflecting section 150. It is not necessary to have
  • the shape of the semiconductor laser element 40 in plan view can be arbitrarily changed.
  • the shape of the semiconductor laser element 40 in plan view may be square, or may be rectangular with the Y-axis direction being the short direction and the X-axis direction being the long direction.
  • the semiconductor laser device 10 may include a plurality of semiconductor laser elements 40.
  • the semiconductor laser device 10 includes three semiconductor laser elements 40A, 40B, and 40C. These semiconductor laser elements 40A to 40C are arranged spaced apart from each other in the X-axis direction. In other words, the semiconductor laser elements 40A to 40C are arranged side by side in a direction perpendicular to the direction in which the laser beams of the semiconductor laser elements 40A to 40C emit when viewed in plan.
  • the semiconductor laser elements 40A to 40C may be configured such that the wavelengths of the laser beams of the semiconductor laser elements 40A to 40C are different from each other.
  • the semiconductor laser element 40A is configured to emit red laser light
  • the semiconductor laser element 40B is configured to emit green laser light
  • the semiconductor laser element 40C is configured to emit blue laser light. ing.
  • the position of the wire W can be changed arbitrarily.
  • the wire W may be formed so as not to overlap the second light emitting surface LS2 of the semiconductor laser element 40 when viewed from the Y-axis direction.
  • the wire W includes a joint WX connected to the second wiring 32. This joint portion WX is provided at a position shifted from the second light emitting surface LS2 in the direction along the second light emitting surface LS2 (the X-axis direction in FIG. 59).
  • the joint WX is located closer to the fourth substrate side surface 26 than the second light emitting surface LS2.
  • the bonding portion WX of the wire W may be arranged, for example, at a position closer to the third substrate side surface 25 than the second light emitting surface LS2.
  • the number of wires W can be changed arbitrarily.
  • the anode electrode 47 of the semiconductor laser element 40 and the second wiring 32 (second mounting portion 193) may be connected by a plurality of wires W.
  • the part of the wire W that is connected to the anode electrode 47 of the semiconductor laser element 40 is the first bonding, and the part that is connected to the second wiring 32 is the second bonded.
  • the wire W may be formed as shown in FIG.
  • the wires are arranged such that the bonding portions of the wires W1 to W4 with the anode electrodes 127A to 127D of the semiconductor laser element 120 are the first bonding, and the bonding portions of the second wirings 32A to 32D are the second bonding.
  • W1 to W4 may be formed.
  • the number and position of the first end surface through holes 39A can be changed arbitrarily.
  • the two first end surface through-holes 39A are formed dispersedly on both sides of the first substrate side surface 23 in the X-axis direction of the semiconductor laser element 40. That is, one of the two first end surface through holes 39A is arranged closer to the third substrate side surface 25 than the semiconductor laser element 40 when viewed from the Y-axis direction. The other one of the two first end surface through holes 39A is arranged closer to the fourth substrate side surface 26 than the semiconductor laser element 40 when viewed from the Y-axis direction.
  • a resist 90 is provided on each first end surface through hole 39A to cover the corresponding first end surface through hole 39A from above.
  • the resist 90 is not placed in a position overlapping with the semiconductor laser element 40 in the X-axis direction when viewed from the Y-axis direction, and the first wiring 31 (first extension portion 31C) is exposed.
  • the first wiring 31 (the first extension portion 31C) reflects at least a portion of the laser light directed toward the substrate surface 21 among the laser light emitted from the first light emitting surface LS1 of the semiconductor laser element 40.
  • the reflected laser light passes through the first sealing end face 53 or the sealing surface 51 and is emitted to the outside of the semiconductor laser device 10 . Therefore, the directivity angle of the laser light emitted by the semiconductor laser device 10 can be widened.
  • the first end surface through hole 39A is not limited to the first substrate side surface 23, and may be formed on at least one of the third substrate side surface 25 and the fourth substrate side surface 26.
  • the first end surface through hole 39A formed in the third substrate side surface 25 is formed to be connected to the end of the first wiring 31 on the third substrate side surface 25 side.
  • the first end surface through hole 39A formed in the fourth substrate side surface 26 is formed so as to be connected to the end of the first wiring 31 on the fourth substrate side surface 26 side. In such a case, by increasing the length of the first wiring 31 in the X-axis direction, the first end surface through hole 39A formed in at least one of the third substrate side surface 25 and the fourth substrate side surface 26 is connected to the first wiring 31.
  • the first end surface through hole 39A only needs to be formed in at least one of the first substrate side surface 23, the third substrate side surface 25, and the fourth substrate side surface 26.
  • the resist 90 may be omitted. good.
  • the number and position of the second end surface through-holes 39B can be changed arbitrarily.
  • the plurality of second end surface through holes 39B may be formed in the second substrate side surface 24 to be spaced apart in the X-axis direction.
  • the second end surface through hole 39B is not limited to the second substrate side surface 24, and may be formed on at least one of the third substrate side surface 25 and the fourth substrate side surface 26.
  • the second end surface through hole 39B formed in the third substrate side surface 25 is formed to be connected to the end of the second wiring 32 on the third substrate side surface 25 side.
  • the second end surface through hole 39B formed in the fourth substrate side surface 26 is formed to be connected to the end of the second wiring 32 on the fourth substrate side surface 26 side.
  • the second end surface through hole 39B formed in at least one of the third substrate side surface 25 and the fourth substrate side surface 26 is connected to the second wiring 32. easier to connect to.
  • the second end surface through hole 39B only needs to be formed in at least one of the first substrate side surface 23, the third substrate side surface 25, and the fourth substrate side surface 26.
  • the shape of the sealing resin 50 is not limited to a rectangular parallelepiped, and can be arbitrarily changed.
  • the first sealing end surface 53 may be an inclined surface that is inclined toward the second substrate side surface 24 as the distance from the substrate surface 21 increases.
  • the second sealing end surface 54 may be an inclined surface that is inclined toward the first substrate side surface 23 as the second sealing end surface 54 moves away from the substrate surface 21 .
  • the third sealing end surface 55 may be an inclined surface that is inclined toward the fourth substrate side surface 26 as the third sealing end surface 55 moves away from the substrate surface 21 .
  • the fourth sealing end surface 56 may be an inclined surface that is inclined toward the third substrate side surface 25 as the fourth sealing end surface 56 moves away from the substrate surface 21 .
  • the sealing surface 51 may be formed as a spherical surface that curves upward toward the center of the substrate surface 21.
  • the sealing surface 51 may be formed as a curved surface that becomes upwardly curved and convex toward the center of the substrate surface 21 in the Y-axis direction.
  • the sealing surface 51 may be formed in a hemispherical shape.
  • the position of the first sealed end surface 53 in the Y-axis direction can be changed arbitrarily.
  • the first sealed end surface 53 may be located inside the first substrate side surface 23 (closer to the semiconductor laser element 40).
  • the position of the second sealed end surface 54 in the Y-axis direction can be changed arbitrarily.
  • the second sealed end surface 54 may be located inside the second substrate side surface 24 (closer to the semiconductor laser element 40).
  • the sealing resin 50 may include a phosphor 240 mixed into the resin in addition to the diffusion material 57.
  • the phosphor 240 is configured to absorb the light from the semiconductor laser element 40 and emit light in a wavelength range different from that of the light from the semiconductor laser element 40.
  • the semiconductor laser element 40 may be configured to emit blue laser light.
  • the phosphor 240 may be configured to absorb blue laser light and emit yellow light. In this way, white laser light can be emitted to the outside of the semiconductor laser device 10 by using the blue laser light and the phosphor 240 that emits yellow light.
  • the configuration of the phosphor 240 can be arbitrarily changed, and may be configured to absorb light and emit infrared light.
  • the shape of the second side wall portion 62 of the side wall 60 can be changed arbitrarily.
  • the inner surface 62A of the second side wall portion 62 may be an inclined surface that slopes upward (away from the substrate surface 21 in the Z-axis direction) as it approaches the second substrate side surface 24.
  • a reflective film 250 may be formed on the inner surface 62A.
  • the reflective film 250 is formed of a metal film such as a Cu film or an Al film.
  • the bonding structure between the side wall 60 and the substrate 20 can be arbitrarily changed.
  • the bonding structure between the sidewall 60 and the substrate 20 may be configured such that the sidewall 60 formed in advance is bonded to the substrate surface 21 of the substrate 20 using an adhesive.
  • the joining structure between the side wall part 172 and the bottom wall part 171 is such that the side wall part 172 is formed separately from the bottom wall part 171, and then the bottom wall part 171 and the side wall part 172 are connected. It may also be configured to be joined using an adhesive.
  • the semiconductor laser device 10 may include a side wall 60.
  • the side wall 60 is formed to surround both the semiconductor laser element 40 and the drive circuit element 130 in plan view.
  • the side wall 60 may be omitted from the semiconductor laser device 10.
  • the first sealing end surface 53 of the sealing resin 50 is flush with the first substrate side surface 23 of the substrate 20, and the second sealing end surface 54 is flush with the first substrate side surface 23 of the substrate 20. It is formed so that it is flush with the second substrate side surface 24, the third sealed end surface 55 is flush with the third substrate side surface 25, and the fourth sealed end surface 56 is flush with the fourth substrate side surface 26. Good too.
  • FIGS. 66 and 67 show a configuration in which four semiconductor laser devices 10 can be manufactured at once for convenience, the present invention is not limited to this, and the configuration can be configured so that more semiconductor laser devices 10 can be manufactured at once. You can.
  • FIG. 67 in order to easily understand the drawing, the diffusion material 57 in the sealing resin 850, which will be described later, is omitted.
  • the method for manufacturing the semiconductor laser device 10 includes a step of preparing a substrate 820, a step of mounting the semiconductor laser element 40, a step of forming the wire W, a step of forming the sealing resin 850, and a step of singulating. and, including.
  • the process of preparing the substrate 820 is the same as the process of preparing the substrate 820 of the first embodiment.
  • the step of mounting the semiconductor laser element 40 is performed in a state where the side wall 860 (see FIG. 8) is not provided on the substrate 820, as shown in FIG. be done.
  • the process of mounting the semiconductor laser element 40 includes the process of mounting the semiconductor laser element 40 on the first wiring 31. In this step, the semiconductor laser element 40 is die-bonded to the first wiring 31. Subsequently, in the step of forming the wire W, the wire W is formed by a wire bonding device as in the first embodiment.
  • a frame 870 is first provided on the substrate 820.
  • the frame 870 is formed to surround the four first wirings 31, the four second wirings 32, and the four semiconductor laser elements 40 in a plan view.
  • the sealing resin 850 is formed by filling the frame 870 with a translucent resin material by, for example, potting.
  • the resin material is made of, for example, a material containing at least one of silicone resin, epoxy resin, and acrylic resin.
  • the sealing resin 50 is made of silicone resin.
  • the sealing resin 850 includes the diffusion material 57 (see FIG. 65).
  • the method of forming the sealing resin 850 is not limited to this, and the sealing resin 850 may be formed on the substrate 820 by resin molding.
  • resin molding include transfer molding and compression molding. After the sealing resin 850 is formed, the frame 870 is removed.
  • both the sealing resin 850 and the substrate 820 are cut along the cutting line CL in FIG. 67 using a dicing blade. Thereby, the sealing resin 50 and the substrate 20 are formed. Through the above steps, the semiconductor laser device 10 is manufactured.
  • the material of the submount substrate 200 can be changed arbitrarily.
  • the submount substrate 200 may be formed of a Si substrate. Further, in one example, the submount substrate 200 may be made of glass epoxy resin like the substrate 20.
  • the submount substrate 200 may be made of a conductive material instead of an insulating material such as alumina.
  • the submount substrate 200 may be made of a material containing Cu.
  • the submount substrate 200 may be formed of a material containing conductive Si. In this way, when the submount substrate 200 is formed of a conductive material, the vias 209 may be omitted from the submount substrate 200.
  • the semiconductor laser device 10 is provided with a submount substrate 200 that is provided to penetrate the submount substrate 200 in the thickness direction (Z-axis direction) instead of the front side wiring 207, the back side wiring 208, and the via 209.
  • the conductive portion may be provided with a conductive portion.
  • a semiconductor laser element 40 is mounted on a surface of the conductive portion exposed from the surface 201 of the submount substrate 200 using a conductive bonding material SD.
  • a surface of the conductive portion exposed from the back surface 202 of the submount substrate 200 is bonded to the first wiring 31 using a conductive bonding material SD.
  • the electrical connection structure between the semiconductor laser element 40 and the first wiring 31 can be changed arbitrarily.
  • the submount substrate 200 may have a configuration in which the semiconductor laser element 40 and the first wiring 31 are not electrically connected.
  • the backside wiring 208 and the vias 209 may be omitted from the submount substrate 200.
  • the semiconductor laser device 10 includes a wire that connects the front side wiring 207 and the first wiring 31. In this way, the semiconductor laser element 40 and the first wiring 31 are electrically connected by the front side wiring 207 and the wire.
  • the semiconductor laser device 10 may further include a protection element 260 that protects the semiconductor laser element 40.
  • 68 and 69 show an example of the configuration of a semiconductor laser device 10 including a protection element 260. Note that in FIG. 69, the wires WA and WB are omitted for convenience.
  • the semiconductor laser device 10 includes a fourth wiring 270 provided on the front surface 21 of the substrate 20, a fourth electrode 271 provided on the back surface 22 of the substrate 20, and a fourth It further includes a via 272 that electrically connects the wiring 270 and the fourth electrode 271.
  • the fourth wiring 270 is formed on the front surface 21 of the substrate
  • the fourth electrode 271 is formed on the back surface 22 of the substrate.
  • the fourth wiring 270 is arranged closer to the second substrate side surface 24 with respect to the first wiring 31.
  • the fourth wiring 270 is arranged at a position aligned with the second wiring 32 in the Y-axis direction.
  • the fourth wiring 270 is arranged closer to the third substrate side surface 25 with respect to the second wiring 32.
  • the length of the second wiring 32 in the X-axis direction is shorter than in the first embodiment in order to form a space for arranging the fourth wiring 270.
  • the fourth electrode 271 is arranged closer to the second substrate side surface 24 with respect to the first electrode 33.
  • the fourth electrode 271 is arranged at a position overlapping the fourth wiring 270 in plan view.
  • the length of the second electrode 34 (not shown) in the X-axis direction is shorter than that of the first embodiment in order to form a space for arranging the fourth electrode 271.
  • the via 272 is provided to penetrate the substrate 20 in its thickness direction (Z-axis direction).
  • the via 272 is connected to both the fourth wiring 270 and the fourth electrode 271. Therefore, the fourth wiring 270 and the fourth electrode 271 are electrically connected through the via 272.
  • the protection element 260 is mounted on the fourth wiring 270. More specifically, the protection element 260 is bonded to the fourth wiring 270 using a conductive bonding material SD. That is, the protection element 260 is mounted on the fourth wiring 270. Both the fourth wiring 270 and the protection element 260 are sealed with the sealing resin 50.
  • the protection element 260 is arranged closer to the second substrate side surface 24 with respect to the semiconductor laser element 40 in plan view.
  • Protective element 260 is provided between semiconductor laser element 40 and second sealing end surface 54 on substrate surface 21 .
  • the protection element 260 is arranged at a position overlapping the semiconductor laser element 40 when viewed from the Y-axis direction. Note that the arrangement position of the protection element 260 can be changed arbitrarily.
  • the protection element 260 For example, a diode is used as the protection element 260.
  • the protection element 260 has an anode electrode 261 formed on its front surface and a cathode electrode 262 formed on its back surface.
  • the front surface of the protection element 260 faces the same side as the substrate surface 21, and the back surface of the protection element 260 faces the substrate surface 21.
  • the cathode electrode 262 is in contact with the conductive bonding material SD. Therefore, the cathode electrode 262 is electrically connected to the fourth wiring 270 by the conductive bonding material SD. Since the fourth wiring 270 is electrically connected to the fourth electrode 271, it can be said that the cathode electrode 262 is electrically connected to the fourth electrode 271.
  • the semiconductor laser device 10 includes a wire WA that connects the semiconductor laser element 40 and the fourth wiring 270, and a wire WB that connects the protection element 260 and the first wiring 31.
  • Each of the wires WA and WB is sealed with a sealing resin 50.
  • Each of the wires WA and WB is made of the same material as the wire W, for example.
  • the wire WA is connected to the anode electrode 47 of the semiconductor laser element 40.
  • the anode electrode 47 of the semiconductor laser element 40 is electrically connected to the fourth wiring 270 by the wire WA. Since the fourth wiring 270 is electrically connected to the cathode electrode 262 of the protection element 260, it can be said that the anode electrode 47 of the semiconductor laser element 40 is electrically connected to the cathode electrode 262 of the protection element 260.
  • the wire WB is connected to the anode electrode 261 of the protection element 260.
  • the anode electrode 261 of the protection element 260 is electrically connected to the first wiring 31 by the wire WB. Since the first wiring 31 is electrically connected to the cathode electrode 48 of the semiconductor laser element 40 (see FIG. 69), the anode electrode 261 of the protection element 260 is electrically connected to the cathode electrode 48 of the semiconductor laser element 40. It can be said that this has been done. In this way, the protection element 260 is connected in antiparallel to the semiconductor laser element 40.
  • a laser via 280 may be formed on the first substrate side surface 23 of the substrate 20.
  • the laser via 280 includes a recess that is curved from the first substrate side surface 23 toward the second substrate side surface 24 and that penetrates the substrate 20 in the thickness direction (Z-axis direction), and a conductor embedded in the recess. It is made up of. For example, Cu is used as the conductor.
  • a plurality of laser vias 280 (six in the illustrated example) are provided. The plurality of laser vias 280 are spaced apart from each other in the X-axis direction. Each laser via 280 connects the first wiring 31 and the first electrode 33 (see FIG. 5).
  • the term “on” includes the meanings of “on” and “over” unless the context clearly dictates otherwise. Therefore, the expression “A is formed on B” means that in each of the above embodiments, A can be placed directly on B by contacting B, but as a modification, A can be placed directly on B without contacting B. It is contemplated that it may be placed above the. That is, the term “on” does not exclude structures in which other members are formed between A and B.
  • the Z-axis direction used in the present disclosure does not necessarily need to be a vertical direction, nor does it need to completely coincide with the vertical direction. Therefore, various structures according to the present disclosure are not limited to the "upper” and “lower” in the Z-axis direction described herein being “upper” and “lower” in the vertical direction.
  • the X-axis direction may be a vertical direction
  • the Y-axis direction may be a vertical direction.
  • the sealing resin (50) includes a diffusion material (57) that diffuses light,
  • the semiconductor laser device (10) includes a first light emitting surface (LS1) that emits laser light toward the first sealed end surface (53).
  • Appendix A2 comprising a first wiring (31) provided on the substrate surface (21),
  • the semiconductor laser element (40) is mounted on the first wiring (31) and provided on the substrate surface (21) via the first wiring (31),
  • a first reflector that is provided at a position closer to the first sealing end surface (53) with respect to the first light emitting surface (LS1) and reflects a part of the laser light emitted from the first light emitting surface (LS1).
  • the first wiring (31) has a portion (31C) extending from the first light emitting surface (LS1) toward the first sealing end surface (53) in plan view as the first reflecting portion (70).
  • Appendix A4 The semiconductor laser device according to appendix A2, wherein the first reflective portion (70) includes a reflective film (210) formed on the substrate surface (21) separately from the first wiring (31).
  • the first reflecting section (70) includes a reflector (80) provided on the substrate surface (21) and including a reflecting surface (83) facing in a direction intersecting the substrate surface (21). semiconductor laser equipment.
  • connection wiring (207) provided on the surface (201) of the submount substrate (200) on the side facing the semiconductor laser element (40); A first reflector that is provided at a position closer to the first sealing end surface (53) with respect to the first light emitting surface (LS1) and reflects a part of the laser light emitted from the first light emitting surface (LS1). further comprising a part (70);
  • the connection wiring (207) has a portion (207A) extending from the first light emitting surface (LS1) toward the first sealing end surface (53) as the first reflective portion (70).
  • the substrate (160) includes a conductive part (180) made of a conductive material,
  • the substrate surface (161) includes a conductive surface (181) configured by the surface of the conductive part (180),
  • the semiconductor laser element (40) is mounted on the conductive surface (181),
  • a first reflector that is provided at a position closer to the first sealing end surface (53) with respect to the first light emitting surface (LS1) and reflects a part of the laser light emitted from the first light emitting surface (LS1).
  • the conductive surface (181) has a portion extending from the first light emitting surface (LS1) toward the first sealing end surface (53) in plan view as the first reflecting portion (70).
  • Appendix A8 The semiconductor laser device described in .
  • Appendix A10 The semiconductor laser according to any one of appendices A1 to A9, further comprising a side wall (60) that surrounds the sealing resin (50) and has an opening that exposes the first sealing end surface (53). Device.
  • the sealing resin (50) includes a second sealing end surface (54) opposite to the first sealing end surface (53),
  • the semiconductor laser device according to any one of appendices A1 to A10, wherein the semiconductor laser element (40) includes a second light emitting surface (LS2) that emits laser light toward the second sealed end surface (54). .
  • Appendix A12 a second reflection that is provided at a position closer to the second sealing end surface (54) with respect to the second light emitting surface (LS2) and reflects a part of the laser light emitted from the second light emitting surface (LS2);
  • Appendix A13 further comprising a second wiring (32) provided on the substrate surface (21) and electrically connected to the semiconductor laser element (40) by a wire (W),
  • the second wiring (32) is arranged at a position closer to the second sealing end surface (54) with respect to the second light emitting surface (LS2),
  • a first wiring (31) is provided on the substrate surface (21),
  • the semiconductor laser element (40) is mounted on the first wiring (31) and is provided on the substrate surface (21) via the first wiring (31);
  • the second reflecting portion (150) includes a reflector (230) provided on the substrate surface (21) and including a reflecting surface (233) facing in a direction intersecting the substrate surface (21). semiconductor laser equipment.
  • the semiconductor laser element (40) is mounted on the submount substrate (200),
  • the submount substrate (200) electrically connects the first wiring (31) and the semiconductor laser element (40),
  • the connection wiring (207) has a portion (207B) extending from the second light emitting surface (LS2) toward the second sealing end surface (54) as the second reflective portion (150).
  • Appendix A11 The semiconductor laser device described in .
  • a photoreceptor is provided on the substrate surface (21) between the semiconductor laser element (40) and the second sealing end surface (LS2) and receives the laser light emitted from the second light emitting surface (LS2).
  • the semiconductor laser device according to any one of appendices A11 to A16, further comprising a diode (110).
  • Appendix A18 The semiconductor laser device according to any one of Appendices A1 to A10, further comprising a drive circuit element (130) mounted on the substrate surface (21) and driving the semiconductor laser element (40).
  • the sealing resin (50) further includes a phosphor (240), The semiconductor laser device according to any one of appendices A1 to A19, wherein the phosphor (240) is configured to absorb light from the semiconductor laser element (40) and emit infrared light.
  • Appendix A22 The semiconductor laser device according to any one of Appendices A1 to A20, wherein the first sealing end surface (53) is rougher than the sealing surface (51).
  • the substrate (20) includes a substrate back surface (22) opposite to the substrate surface (21), a second wiring (32) provided on the substrate surface (21) and electrically connected to the semiconductor laser element (40) by a wire (W); a first electrode (33) provided on the back surface (22) of the substrate; a second electrode (34) provided on the back surface (22) of the substrate; a first via (35) that penetrates the substrate (20) and connects the first wiring (31) and the first electrode (33); A second via (36) that penetrates the substrate (20) and connects the second wiring (32) and the second electrode (34) is described in any one of Appendices A2 to A7. semiconductor laser equipment.
  • the substrate (20) includes a first substrate side surface (23) and a second substrate side surface (24) that connect the substrate front surface (21) and the substrate back surface (22),
  • the first substrate side surface (23) faces the same side as the first light emitting surface (LS1)
  • the second substrate side surface (24) faces opposite to the first substrate side surface (23)
  • a first side electrode (37) formed continuously from the first electrode (33) is formed on the first substrate side surface (23)
  • the first side electrode (37) connects the first electrode (33) and the first wiring (31), The semiconductor laser device according to appendix A26, wherein the second side electrode (38) connects the second electrode (34) and the second wiring (32).
  • [Appendix A28] a second wiring (32) provided on the substrate surface (21) and electrically connected to the semiconductor laser element (40) by a wire (W);
  • the first wiring (31) is electrically connected to the cathode electrode (48) of the semiconductor laser element (40),
  • the semiconductor laser device according to any one of appendices A2 to A7, wherein the second wiring (32) is electrically connected to the anode electrode (47) of the semiconductor laser element (40).
  • the substrate (20) connects the back surface (22) of the substrate opposite to the front surface (21) of the substrate, the front surface (21) of the substrate, and the back surface (22) of the substrate, and the first light emitting surface (LS1). a first substrate side surface (23) facing the same side as the first substrate side surface (23), and a second substrate side surface (24) opposite to the first substrate side surface (23), An end surface through hole (39) is recessed from the first substrate side surface (23) toward the second substrate side surface (24) and is provided so as to penetrate the substrate (20) in the thickness direction (Z-axis direction). )
  • the semiconductor laser device according to any one of Appendices A1 to A28.
  • Appendix A30 The semiconductor laser device according to appendix A29, further comprising a resist (90) that covers the end surface through hole (39) from the substrate surface (21) side.
  • Appendix A31 The semiconductor laser device according to appendix A30, wherein the resist (90) is made of a material with higher reflectance than the substrate (20).
  • the end surface through hole (39) is provided at a position shifted from the first light emitting surface (LS1) in the direction (X-axis direction) along the first sealed end surface (53) in plan view.
  • Appendix A33 The semiconductor laser device according to any one of Appendices A29 to A31, wherein a plurality of end face through holes (39) are provided.
  • the sealing resin (50) includes a second sealing end surface (54) opposite to the first sealing end surface (53),
  • the semiconductor laser element (40) includes a second light emitting surface (LS2) that emits laser light toward the second sealed end surface (54), Further comprising a wire (W) electrically connecting the semiconductor laser element (40) and the second wiring (32),
  • the wire (W) includes a joint part joined to the second wiring (32),
  • the bonding portion is arranged to connect the second light emitting surface (LS2) in a direction along the second light emitting surface (LS2) (X-axis direction) in a direction perpendicular to the thickness direction (Z-axis direction) of the substrate (20). ), the semiconductor laser device according to any one of appendices A25 to A27.
  • Appendix A35 Further comprising a wire (W) electrically connecting the semiconductor laser element (40) and the second wiring (32),
  • the wire (W) is a bonding wire
  • the bonding portion of the wire (W) with the second wiring (32) is first bonded
  • the semiconductor laser device according to any one of appendices A25 to A27, wherein a bonding portion of the wire (W) with the semiconductor laser element (40) is a second bonding.
  • the substrate (160) includes: a first conductive part (180) formed of a conductive material;
  • the semiconductor laser device according to Appendix A1 further comprising: an insulating substrate (160A) that is a molded resin that holds the first conductive part (180).
  • the insulating substrate (160A) includes a bottom wall portion (171) that holds the first conductive portion (180), and a side wall that rises from the bottom wall portion (171) and surrounds the sealing resin (50) in plan view.
  • Appendix A38 The semiconductor laser device according to any one of appendices A1 to A35, wherein the substrate (20) is formed of a material containing ceramic.
  • Appendix A40 The semiconductor laser device according to appendix A6, wherein the submount substrate (200) is formed of a material having a coefficient of thermal expansion closer to that of the semiconductor laser element (40) than that of the first wiring (31).
  • Appendix A42 The semiconductor laser device according to any one of appendices A1 to A41, wherein a plurality of the semiconductor laser elements (40P, 40Q, 40R) are provided.
  • [Appendix B1] a step of preparing a substrate (820) with a first wiring (31) provided on the substrate surface (821); a step of mounting a semiconductor laser element (40) on the first wiring (31); forming a translucent sealing resin (850) for sealing the semiconductor laser element (40),
  • the sealing resin (850) has a sealing surface (51) facing the same side as the substrate surface (821), a first sealing end surface (53) that intersects the sealing surface (51), and a first sealing end surface (53) that allows light to pass through.
  • the semiconductor laser element (40) includes a first light emitting surface (LS1) that emits laser light, A semiconductor laser device in which the semiconductor laser element (40) is mounted on the first wiring (31) so that the first light emitting surface (LS1) emits laser light toward the first sealing end surface (53). (10) Manufacturing method.
  • Appendix B2 further comprising forming a side wall (860) on the substrate (820) by resin molding, The method for manufacturing a semiconductor laser device according to Appendix B1, wherein the side wall (860) surrounds the sealing resin (850) in plan view.
  • Appendix B3 The method for manufacturing a semiconductor laser device according to appendix B2, wherein the sealing resin (850) is filled into a space surrounded by the side wall (860) and the substrate (820) by potting or resin molding.
  • [Appendix B4] preparing a lead frame (980) including a first mounting portion (183); forming an insulating substrate (960) that supports the lead frame (980) by resin molding; a step of mounting a semiconductor laser element (40) on the first mounting section (183); forming a translucent sealing resin (950) for sealing the semiconductor laser element (40),
  • the sealing resin (950) has a sealing surface (51) facing the same side as the substrate surface (21), a first sealing end surface (53) that intersects the sealing surface (51), and a first sealing end surface (53) that allows light to pass through.
  • the semiconductor laser element (40) includes a first light emitting surface (LS1) that emits laser light,
  • the semiconductor laser element (40) is mounted on the first mounting portion (183) so that the first light emitting surface (LS1) emits laser light toward the first sealing end surface (53). Method of manufacturing the device.
  • Cathode electrode 50 Sealing resin 51... Sealing surface 53-56... First to fourth sealing end surfaces 57... Diffusion material 60... Side wall 61... First side wall portion 62... Second side wall portion 62A...Inner surface 70...First reflective part 80...Reflector 81...Bottom surface 82...Side surface 83...Reflective surface 90...Resist 100...Third wiring 101...Third electrode 102...Via 110...Photodiode 111...Anode electrode 112...Cathode electrode 120... Semiconductor laser element 121... Element surface 122... Element back surface 123-126... First to fourth element side surfaces 127A-127D... Anode electrode 128... Cathode electrode 32A-32D...
  • Insulating substrate 161 ...Substrate surface 162...Board back surface 163-166...First to fourth board side surfaces 171...Bottom wall portion 172...Side wall portion 180...First conductive portion 181...First conductive surface 182...First conductive back surface 183...First mounting Part 183A...First end face 183B...Second end face 183C...First extension part 184...First hanging lead part 190...Second conductive part 191...Second conductive surface 192...Second conductive back surface 193...Second mounting part 194 ...Second hanging lead part 210...Reflection film 173...Reflector part 173A...Slanted surface 174...Reflection film 200...Submount board 201...Front surface 202...Back surface 203-206...First to fourth side surfaces 207...Front side wiring 207A...

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Ce dispositif laser à semi-conducteur comprend un substrat qui a une surface de substrat, un élément laser à semi-conducteur qui est disposé sur la surface de substrat, et une résine de scellement translucide qui scelle l'élément laser à semi-conducteur. La résine de scellement a une surface de scellement qui fait face au même côté que la surface de substrat, et une première surface d'extrémité de scellement qui croise la surface de scellement. La résine de scellement comprend un matériau de diffusion qui diffuse la lumière. L'élément laser à semi-conducteur comprend une première surface d'émission de lumière qui émet une lumière laser vers la première surface d'extrémité de scellement.
PCT/JP2023/032956 2022-09-12 2023-09-11 Dispositif laser à semi-conducteur WO2024058087A1 (fr)

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JP2022144644 2022-09-12

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Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005311364A (ja) * 2004-04-17 2005-11-04 Lg Electronics Inc 発光装置とその製造方法、及びそれを利用した発光システム
JP2010002522A (ja) * 2008-06-18 2010-01-07 Fuji Xerox Co Ltd 光モジュール
JP2013089791A (ja) * 2011-10-19 2013-05-13 Rohm Co Ltd マルチビーム半導体レーザ装置
JP2013258434A (ja) * 2013-10-01 2013-12-26 Japan Oclaro Inc マルチビーム半導体レーザ装置
JP2019165127A (ja) * 2018-03-20 2019-09-26 住友電気工業株式会社 フィルタおよび光モジュール
WO2019240150A1 (fr) * 2018-06-12 2019-12-19 国立研究開発法人産業技術総合研究所 Dispositif électroluminescent
JP2021150577A (ja) * 2020-03-23 2021-09-27 株式会社ジャパンディスプレイ 電極基板及び発光装置
JP2022013030A (ja) * 2020-07-03 2022-01-18 日本電気株式会社 光学モジュール実装基板、光学モジュール、光学モジュール実装基板の製造方法、および光学モジュールの製造方法
JP2022052552A (ja) * 2020-09-23 2022-04-04 日亜化学工業株式会社 成形体の製造方法、成形体及び発光装置
JP2022101471A (ja) * 2020-12-24 2022-07-06 日亜化学工業株式会社 発光装置
JP2022109722A (ja) * 2021-01-15 2022-07-28 ローム株式会社 半導体レーザ装置

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005311364A (ja) * 2004-04-17 2005-11-04 Lg Electronics Inc 発光装置とその製造方法、及びそれを利用した発光システム
JP2010002522A (ja) * 2008-06-18 2010-01-07 Fuji Xerox Co Ltd 光モジュール
JP2013089791A (ja) * 2011-10-19 2013-05-13 Rohm Co Ltd マルチビーム半導体レーザ装置
JP2013258434A (ja) * 2013-10-01 2013-12-26 Japan Oclaro Inc マルチビーム半導体レーザ装置
JP2019165127A (ja) * 2018-03-20 2019-09-26 住友電気工業株式会社 フィルタおよび光モジュール
WO2019240150A1 (fr) * 2018-06-12 2019-12-19 国立研究開発法人産業技術総合研究所 Dispositif électroluminescent
JP2021150577A (ja) * 2020-03-23 2021-09-27 株式会社ジャパンディスプレイ 電極基板及び発光装置
JP2022013030A (ja) * 2020-07-03 2022-01-18 日本電気株式会社 光学モジュール実装基板、光学モジュール、光学モジュール実装基板の製造方法、および光学モジュールの製造方法
JP2022052552A (ja) * 2020-09-23 2022-04-04 日亜化学工業株式会社 成形体の製造方法、成形体及び発光装置
JP2022101471A (ja) * 2020-12-24 2022-07-06 日亜化学工業株式会社 発光装置
JP2022109722A (ja) * 2021-01-15 2022-07-28 ローム株式会社 半導体レーザ装置

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