WO2019073864A1 - 赤色蛍光体及び発光装置 - Google Patents
赤色蛍光体及び発光装置 Download PDFInfo
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- WO2019073864A1 WO2019073864A1 PCT/JP2018/036942 JP2018036942W WO2019073864A1 WO 2019073864 A1 WO2019073864 A1 WO 2019073864A1 JP 2018036942 W JP2018036942 W JP 2018036942W WO 2019073864 A1 WO2019073864 A1 WO 2019073864A1
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 115
- 239000013078 crystal Substances 0.000 claims abstract description 39
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 25
- 229910052788 barium Inorganic materials 0.000 claims abstract description 6
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 6
- 238000000137 annealing Methods 0.000 claims description 34
- 238000010304 firing Methods 0.000 claims description 30
- 239000002994 raw material Substances 0.000 claims description 23
- 238000002156 mixing Methods 0.000 claims description 15
- 239000012298 atmosphere Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 238000000295 emission spectrum Methods 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 5
- 238000009877 rendering Methods 0.000 abstract description 16
- 229910052712 strontium Inorganic materials 0.000 abstract description 5
- 230000000052 comparative effect Effects 0.000 description 35
- 239000011575 calcium Substances 0.000 description 29
- 239000000843 powder Substances 0.000 description 22
- 230000007547 defect Effects 0.000 description 13
- 230000005284 excitation Effects 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000011812 mixed powder Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- -1 calcium nitride Chemical class 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 238000002189 fluorescence spectrum Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000634 powder X-ray diffraction Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- PSBUJOCDKOWAGJ-UHFFFAOYSA-N azanylidyneeuropium Chemical compound [Eu]#N PSBUJOCDKOWAGJ-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229920000995 Spectralon Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910001940 europium oxide Inorganic materials 0.000 description 2
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 238000000790 scattering method Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 229940043267 rhodamine b Drugs 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/64—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Definitions
- the present invention relates to a red phosphor, and a light emitting member and a light emitting device using the red phosphor. More specifically, the present invention relates to a red phosphor with high brightness that can be preferably used for LEDs (also referred to as light emitting diodes) or LDs (also referred to as laser diodes), and light emitting members and light emitting devices using the red phosphors.
- LEDs also referred to as light emitting diodes
- LDs also referred to as laser diodes
- a white LED is a device that emits pseudo white light by a combination of a semiconductor light emitting element and a phosphor, and a combination of a blue LED and a YAG yellow phosphor is known as a representative example thereof.
- this type of white LED falls within the white region as its chromaticity coordinate value, the red light emitting component is insufficient, so the color rendering property is low in lighting applications, and an image display device such as a liquid crystal backlight
- Patent Document 1 proposes using a nitride or oxynitride phosphor that emits red light together with the YAG phosphor.
- An inorganic compound having the same crystal structure as CaAlSiN 3 (generally described as CASN) as a red light emitting nitride phosphor was activated with an optically active element such as Eu 2+ as a host crystal.
- CASN phosphor One is known as a CASN phosphor.
- Patent Document 2 describes that a host crystal of CASN is activated with Eu 2+ to form a phosphor (that is, an Eu-activated CASN phosphor) emits light with high brightness.
- the emission color of the CASN phosphor contains a large amount of spectral components on the longer wavelength side even in the red region, so high color depth can be realized, but on the other hand, there are also many low spectral components. Is required to further improve the brightness.
- the emission peak wavelength is shifted to the short wavelength side, and the half width of the emission spectrum is narrowed. Therefore, while the luminance is improved due to the narrowing of the half width, there is a problem that the color rendering property with depth can not be realized as in the CASN phosphor because it is shifted to the short wavelength side.
- the present inventors define the Eu content rate, the Sr content rate, and the Ca content rate in a specific composition range in the Eu-activated SCASN phosphor, and a specific value.
- the present invention can be controlled, and the present invention has been completed. Therefore, when this phosphor is used for a light emitting device, high luminance can be achieved without impairing the color rendering property.
- the embodiment of the present invention can provide the following.
- M in the above general formula is an element group consisting of at least three or more elements essentially consisting of Eu, Sr and Ca, selected from among Eu, Sr, Mg, Ca and Ba, and the Eu content is 4 .5% by mass or more and 7.0% by mass or less
- Sr content rate is 34.0% by mass or more and 42.0% by mass or less
- Ca content rate is 0.8% by mass or more and 3.0% by mass or less
- the red phosphor according to (1) which absorbs light in the range from ultraviolet light to visible light, emits light with an emission peak wavelength in the range of 635 nm to 650 nm, and has a half width of the emission spectrum of 80 nm or less .
- a light emitting member comprising the red phosphor according to any one of (1) to (3).
- a light emitting device having the light emitting member according to (4).
- a method for producing a red phosphor wherein the main crystal phase has the same crystal structure as CaAlSiN 3 and the general formula is represented by MAlSiN 3 , A mixing step of mixing the raw materials, Firing the raw material after the mixing step to form a red phosphor; M in the above general formula is an element group consisting of at least three or more elements essentially consisting of Eu, Sr and Ca, selected from Eu, Sr, Mg, Ca and Ba, In the red phosphor to be obtained, the content of Eu is 4.5% to 7.0% by mass, the content of Sr is 34.0% to 42.0% by mass, the content of Ca is 0.8% % To 3.0 mass% or less, The method for producing a red phosphor, wherein the obtained red phosphor has an internal quantum efficiency of 71% or more when excited by light of a wavelength of 455 nm.
- the red phosphor to be obtained absorbs light in the range of ultraviolet light to visible light to emit light with an emission peak wavelength in the range of 635 nm to 650 nm, and the half width of the emission spectrum is 80 nm or less 6).
- a Eu-activated SCASN-based phosphor having high luminance can be provided, and a light-emitting member (also referred to as a light-emitting element) having high luminance and high color rendering can be obtained by combining with a light emitting light source such as an LED.
- a light emitting light source such as an LED.
- Such light emitting devices include, for example, lighting devices, backlight devices, image display devices and signal devices.
- the red phosphor according to the embodiment of the present invention is a phosphor whose main crystal phase has the same crystal structure as CaAlSiN 3 and whose general formula is represented by MAlSiN 3 . It can be confirmed by powder X-ray diffraction whether the main crystal phase of the phosphor has the same crystal structure as the CaAlSiN 3 crystal. When the crystal structure is different from that of CaAlSiN 3 , the light emission color is not red and the luminance is significantly reduced, which is not preferable. Therefore, it is preferable that the present red phosphor is a single phase in which crystal phases other than the main crystal phase (also referred to as heterophase) are not mixed as much as possible. You may include it.
- M in the general formula MAlSiN 3 is an element group consisting of at least three or more elements essentially consisting of Eu, Sr and Ca, selected from Eu, Sr, Mg, Ca and Ba.
- M in the above general formula is not attached with a suffix indicating the number of atoms, it is a notation for convenience because there is a range in selection of the element species, and indicates that it is necessarily 1 Please note that it does not mean that
- the Eu content relative to the entire composition of the phosphor is 4.5% by mass or more and 7.0% by mass
- the Sr content is 34.0% by mass or more and 42.0% by mass
- Ca is contained.
- a ratio of 0.8% by mass or more and 3.0% by mass or less is required in order to obtain the desired characteristics, and when this condition is exceeded, problems such as inferior luminance and color rendering occur.
- the Eu content can be in the range of 5.0% by mass or more and 7.0% by mass or less, more preferably in the range of 5.0% by mass or more and 6.7% by mass or less.
- the Sr content can be in the range of 34.0% to 41.0% by mass, more preferably in the range of 36.0% to 40.0% by mass.
- the Ca content can be in the range of 0.8% by mass to 2.9% by mass, more preferably in the range of 0.8% by mass to 2.8% by mass.
- the crystal defect is reduced by setting the Ca content to 0.8% by mass or more and 1.0% by mass or less, more preferably 0.8% by mass or more and 0.9% by mass or less. Can also be achieved.
- the content as extremely low results in insufficient luminance as a phosphor and a light emission peak
- the wavelength shifts to the short wavelength side deep color rendering can not be realized.
- the emission peak wavelength is shifted to the long wavelength side while maintaining high luminance, so that the emission peak in the 635 nm to 650 nm range becomes high color rendering when it is packaged It is preferable because a wavelength can be obtained.
- the content of Eu is too high (for example, the content is more than 7.0% by mass), it does not form a solid solution in the phosphor and volatilizes during the synthesis, or Eu to a heterophase such as Sr 2 Si 5 N 8 It has been difficult to dissolve excess Eu in the SCASN phosphor because the solid solution proceeds. Also, if the content of Eu is too high, 1) a loss phenomenon known as concentration quenching of the phosphor occurs due to energy transfer between Eu atoms, 2) the phosphor is conversely generated due to the formation of crystalline defects etc. There is also a tendency for the brightness to decrease because the brightness of the light is likely to decrease.
- the content of Eu can be reduced without reducing the luminance of the phosphor by reducing crystal defects (for example, by annealing treatment under a specific annealing condition or a specific elemental composition). It is possible to raise it.
- the luminance of the phosphor decreases with the broadening of the emission spectrum, and when it exceeds 42.0% by mass, the emission peak wavelength is largely shifted to the short wavelength side. , Can not achieve deep color rendering.
- the emission peak wavelength is largely shifted to the short wavelength side, so that deep color rendering can not be realized, and when it exceeds 3.0% by mass, the emission spectrum is broadened. There is a problem that the decrease in the luminance of the phosphor associated with the problem becomes significant.
- the present red phosphor may contain a small amount of oxygen (O) as an unavoidable component, it does not cause any problem unless the characteristics as the phosphor are impaired, and the red phosphor has a crystal structure.
- the content ratio of M element, Si / Al ratio, N / O ratio, etc. can be adjusted so that electrical neutrality can be maintained as a whole while maintaining
- the half width of the emission spectrum of the present red phosphor is preferably narrow in order to obtain high emission intensity.
- the half width is preferably 80 nm or less, more preferably 78 nm or less, and still more preferably 76 nm or less.
- the half width exceeds 80 nm, the emission intensity of the obtained phosphor may be reduced.
- the present red phosphor can have a structure with few crystal defects, which has an effect of efficiently converting light in the blue region into red light.
- an annealing (treatment) step may be performed after the firing step when producing a phosphor, or in elemental composition. It is considered that this can be realized by suppressing the amount of Ca to about 0.8 to 1.0% by mass.
- the number of crystal defects can be quantitatively evaluated by the internal quantum efficiency.
- the internal quantum efficiency at the time of excitation with light of a wavelength of 455 nm needs to be 71% or more, preferably 73% or more, and more preferably 75% or more. If the internal quantum efficiency is less than 71%, there is a problem that the luminance decreases.
- the present red phosphor is used as fine particles, but if the median diameter (also described as d50) is too small, the fluorescence luminance tends to be low, and if too large, the phosphor is mounted on the light emitting surface of the LED. It is preferable that d50 is 1 ⁇ m or more and 50 ⁇ m or less because there is a tendency for variations in chromaticity of light emission colors or unevenness in light emission colors to occur. In addition, said d50 is the value calculated from the volume average diameter measured by the laser diffraction scattering method according to JISR1622: 1995 and R1629: 1997.
- the present red phosphor has a 10 volume% diameter (also described as d10) in a volume-based particle size distribution measured by laser diffraction scattering method of 4 ⁇ m or more, and a 90 volume% diameter (also described as d90) of 55 ⁇ m or less Is preferred.
- the manufacturing method of the present red phosphor needs to include a mixing step of mixing the raw materials and a baking step of firing the raw materials after the mixing step to form a red phosphor.
- an annealing process may be further included which performs annealing after the baking process.
- powders of nitrides of elements constituting the red phosphor that is, powders of calcium nitride, silicon nitride, aluminum nitride, strontium nitride, and europium nitride are suitably used as the raw materials. It is also possible to use the oxides of For example, as a source of europium having a very low content in the phosphor, powder of europium oxide which is more easily available than europium nitride may be used.
- the method of mixing the raw materials is not particularly limited, but in particular, calcium nitride, strontium nitride and europium nitride, which react violently with moisture and oxygen in the air, are mixed in such a manner that they are handled in a glove box substituted with an inert atmosphere. It is suitable to carry out the filling of the raw material mixed powder into the firing container in the glove box. In addition, it is preferable that, after taking out the firing container filled with the raw material mixed powder from the glove box, immediately set it in the firing furnace and start firing.
- the atmosphere and the firing temperature are not particularly limited.
- a nitrogen atmosphere for example, usually 1600 ° C. or more and 2000 ° C. or less, preferably 1700 ° C. or more and 2000 ° C.
- the raw material mixed powder can be fired under the following conditions. If the firing temperature is lower than 1600 ° C., the amount of unreacted residues increases, and if the temperature exceeds 2000 ° C., the main phase having the same crystal structure as CaAlSiN 3 decomposes, which may not be preferable.
- the firing time of the raw material mixed powder in the above firing step is not particularly limited, but a range of the firing time is selected as appropriate without causing problems such as a large amount of unreacted material, insufficient grain growth or a decrease in productivity. In general, it is preferably 2 hours or more and 24 hours or less.
- the pressure of the atmosphere in the firing step can increase the decomposition temperature of the phosphor as the atmospheric pressure is set higher, but it is preferable to be less than 1 MPaG (gauge pressure) in consideration of industrial productivity.
- the atmospheric pressure can be, for example, 0.7 MPaG or more, preferably 0.8 MPaG or more.
- the firing container used in the firing step is preferably made of a material which is stable in a high-temperature nitrogen atmosphere and which hardly reacts with the raw material mixed powder and its reaction product, and is made of boron nitride such as molybdenum, tantalum, tungsten And other containers made of high melting point metal such as carbon, etc.
- the baking container is preferably a container with a lid.
- the state of the red phosphor obtained by firing is various, such as powdery, massive, and sintered, depending on the raw material combination and firing conditions.
- the phosphor is formed into a powder of a predetermined size by combining crushing, pulverizing and / or classification operations.
- the crushing, pulverizing and / or classification operations can be appropriately performed after the firing step, after the annealing step, or after the other steps.
- the atmosphere pressure is preferably in the range of 0.65 MPaG or less under vacuum or an inert gas atmosphere. If the atmospheric pressure exceeds 0.65 MPaG, crystal defects generated at the time of firing can not be reduced, which may be undesirable. On the other hand, in general, the lower the atmospheric pressure, the more preferable since crystal defects can be reduced. By reducing the crystal defects, higher luminance of the phosphor can be expected. Further, as an inert gas used as the atmosphere gas, there are hydrogen, nitrogen, argon and helium, and hydrogen and argon are particularly preferable.
- the annealing temperature in the annealing step is preferably 1100 ° C. or more and 1650 ° C. or less. If the annealing temperature is lower than 1100 ° C., the crystal defects generated at the time of firing can not be reduced, and if the temperature exceeds 1650 ° C., the main phase of SCASN is obtained under the pressure range of 0.65 MPaG or less under vacuum or inert gas atmosphere. It is not preferable because it decomposes.
- the holding time of the annealing step can be set arbitrarily, it is preferable to increase the holding time to the extent that the effect of the annealing can be exhibited, for example, may be in the range of 4 to 24 hours.
- the container used in the annealing step is preferably made of a material which is stable in a high temperature inert atmosphere and hardly reacts with the reaction product obtained by firing, and has a high melting point such as molybdenum, tantalum, tungsten, etc. It is made of metal. Also, a container with a lid is preferred.
- an acid treatment step may be carried out after the annealing step for the purpose of removing the impurities in the phosphor.
- the light emitting member is sealed with a sealing material containing the red phosphor of the present invention, and can be used for a light emitting member in combination with an excitation light source, for example, a semiconductor light emitting device. it can.
- a light emitting device having the light emitting member can also be provided.
- this red fluorescent substance is excited by irradiating the ultraviolet light and visible light which contain the wavelength of 350 nm or more and 500 nm or less, since it has the characteristic to emit the fluorescence which has a peak in the wavelength range of 635 nm or more and 650 nm or less
- An ultraviolet LED or a blue LED is preferably used as the semiconductor light emitting device.
- a phosphor that emits green to yellow and / or a blue phosphor may be added to the sealing material containing the present red phosphor, whereby white light can be obtained as a whole. It will be.
- Comparative example a1 The method for producing the phosphor of the present invention and the method for evaluating the same according to the examples and the comparative examples will be specifically described below.
- the phosphor of Comparative Example a1 is manufactured by passing through the mixing process and the baking process of the raw materials, and is manufactured without imposing the annealing process.
- the container filled with the raw material mixed powder was taken out of the glove box, quickly set in an electric furnace equipped with a carbon heater, and the inside of the furnace was sufficiently evacuated to 0.1 PaG or less. Heating was started while vacuum evacuation was continued, and after reaching 600 ° C., nitrogen gas was introduced into the furnace to set the atmosphere pressure in the furnace to 0.9 MPaG. Even after the start of the introduction of nitrogen gas, the temperature was continued to rise to 1950 ° C., firing was carried out for 8 hours at the holding temperature of this firing, and then the heating was completed and cooled.
- the Eu, Sr, and Ca contents in the obtained phosphor are determined using an ICP emission spectrophotometer (CIROS-120, manufactured by Rigaku Corporation) after dissolving the phosphor by pressurized acid decomposition method. analyzed.
- ICP emission spectrophotometer CROS-120, manufactured by Rigaku Corporation
- the Eu content in the phosphor of Comparative Example a1 was 5.1% by mass
- the Sr content was 40.0% by mass
- the Ca content was 2.2% by mass.
- the half width was measured as follows. First, a standard reflector with a reflectance of 99% (Labsphere, CSRT-99-020, Spectralon) is attached to the integrating sphere, and this integrating sphere is a monochromatic light separated into a wavelength of 455 nm from a light emission source (Xe lamp) The light was introduced using an optical fiber. The excitation spectrum using this monochromatic light as an excitation source was measured using a spectrophotometer (MCPD-7000 manufactured by Otsuka Electronics Co., Ltd.). At that time, the excitation light photon number (Qex) was calculated from the spectrum in the wavelength range of 445 to 465 nm.
- MCPD-7000 spectrophotometer
- the fluorescence characteristics of the fluorescent substance were evaluated using a spectrofluorimeter (F-7000 manufactured by Hitachi High-Technologies Corporation) corrected by Rhodamine B and a substandard light source.
- a solid sample holder attached to a photometer was used to obtain a fluorescence spectrum at an excitation wavelength of 455 nm.
- the peak wavelength of the fluorescence spectrum emitted by the phosphor of Comparative Example a1 was 640 nm.
- the value of the peak intensity of the fluorescence spectrum of comparative example a1 was made into 100%, and it was set as the evaluation standard of the other Example and the comparative example.
- the phosphor of Comparative Example a1 is added to the silicone resin together with the LuAG yellow phosphor (peak wavelength of emission at 535 nm when receiving excitation light of wavelength 455 nm) to the silicone resin, defoamed and kneaded, and then blue of peak wavelength 450 nm
- a white LED was produced by potting the LED element to a bonded surface mount type package and then heat curing it.
- the additive amount ratio of the SCASN phosphor to the LuAG phosphor was adjusted so that the chromaticity coordinates (x, y) of the white LED would be (0.45, 0.41) at the time of current emission.
- the obtained white LED was measured by an Otsuka Electronics total luminous flux measurement device (a combination of a 300 mm diameter integrating hemisphere and a spectrophotometer / MCPD-9800).
- the average color rendering index (Ra) of the obtained white LED package was 90.
- the value of the total luminous flux value in Example 1 was made into 100%, and it was set as the evaluation standard of the other Example and the comparative example.
- the internal quantum efficiency was measured as follows. A standard reflector (Spectralon, manufactured by Labsphere, Inc.) having a reflectance of 99% was set at the side opening ( ⁇ 10 mm) of the integrating sphere ( ⁇ 60 mm) at normal temperature. A monochromatic light split to a wavelength of 455 nm from a light emitting light source (Xe lamp) was introduced to this integrating sphere through an optical fiber, and the spectrum of the reflected light was measured by a spectrophotometer (MCPD-7000 manufactured by Otsuka Electronics Co., Ltd.). At that time, the excitation light photon number (Qex) was calculated from the spectrum in the wavelength range of 445 to 465 nm.
- MCPD-7000 manufactured by Otsuka Electronics Co., Ltd.
- a concave cell filled with a fluorescent substance so as to have a smooth surface is set at the opening of the integrating sphere, and monochromatic light of wavelength 455 nm is irradiated, and the spectrum of the reflected light and fluorescence of the excitation is spectrophotometric It measured by the meter.
- the excitation reflected light photon number (Qref) and the fluorescence photon number (Qem) were calculated from the obtained spectrum data.
- the number of excitation reflected light photons was calculated in the same wavelength range as the number of excitation light photons, and the number of fluorescence photons was calculated in the range of 465 to 800 nm.
- Comparative Examples a2 to a7, Example a1 The phosphors of Comparative Examples a2 to a7 and Example a1 were produced under the same production conditions as Comparative Example a1 except that the same raw material powder as Comparative Example a1 was used, and the Eu, Sr and Ca contents in the phosphor were changed. A powder was made. The powder X-ray diffraction patterns of the obtained samples all showed the same diffraction pattern as that of the CaAlSiN 3 crystal.
- the red phosphors in which the Eu, Sr, and Ca contents in the phosphors are defined in a specific range have half widths at emission peak wavelengths in the range of 635 nm to 650 nm. Is as narrow as 80 nm or less.
- the composition was as shown in Comparative Examples a4 and a5
- the emission peak wavelength in the range of 635 nm to 650 nm was achieved, there was a problem that the half width became wide.
- the problem of the emission peak wavelength being shifted to a shorter wavelength side than 635 nm occurred when the compositions of Comparative Examples a6 and a7 were obtained.
- Example b1 was manufactured as follows as a fluorescent substance manufactured through the mixing process of a raw material, a baking process, and an annealing process.
- the sintered powder obtained in Comparative Example a1 was filled in a tungsten container, and was quickly set in an electric furnace equipped with a carbon heater, and the inside of the furnace was sufficiently evacuated to 0.1 PaG or less. Heating was started while vacuum evacuation was continued, and after reaching 600 ° C., argon gas was introduced into the furnace to set the atmosphere pressure in the furnace to 0.2 MPaG. After the start of the introduction of argon gas, the temperature was continuously raised to 1300 ° C., and after the temperature rise, annealing treatment was performed at 1300 ° C.
- Example b1 The internal quantum efficiency, peak wavelength, half width, peak emission intensity, and package characteristics were evaluated for the phosphor according to Example b1 in the same manner as in Example a1 described above.
- Eu, Sr, and Ca content rate of Example b1 are the same as that of comparative example a1.
- Example b2 to b4 Comparative Example b1
- Examples b2 to b4 were prepared under the same conditions as Example b1 except that the fired powders obtained in Comparative Example a2, Comparative Example a3, and Example a1 were used instead of the fired powder used in Example b1. did.
- Comparative Example b1 was produced under the same conditions as Example b1, except that the fired powder obtained in Comparative Example a4 was used instead of the fired powder used in Example b1.
- Example b5 and b6 were produced under the same conditions as Example b1 except that the holding temperatures of the annealing were 1200 ° C. and 1500 ° C., respectively.
- Example b7 and b8 were fabricated under the same conditions as Example b1 except that the atmosphere pressure in the furnace at the time of annealing was 0.01 MPaG and 0.6 MPaG, respectively.
- Example b9, b10 were fabricated under the same conditions as Example b1 except that the atmosphere gas at the time of the annealing was hydrogen and nitrogen, respectively.
- Example b11 was produced under the same conditions as Example b1, except that the fired powder obtained in Comparative Example a5 was used instead of the fired powder used in Example b1.
- Comparative examples b2 and b3 were produced under the same conditions as Example b1 except that the holding temperature at the time of annealing was 1000 ° C. and 1700 ° C., respectively.
- Comparative example b4 The comparative example b4 was produced on the same conditions as Example b1 except the furnace atmospheric pressure at the time of annealing processing having been 0.7 MpaG.
- the SCASN phosphor having a specific range of elemental composition and internal quantum efficiency has relatively high luminous intensity and color rendering when packaged. Further, it can also be seen from Tables 1 and 2 that with the SCASN phosphor in a specific composition range, the light emission intensity is significantly increased when the annealing treatment is performed. In particular, comparing the comparative example in which the annealing step is not performed with the embodiment in which the annealing step is performed, the crystal defect is reduced by the annealing step, the internal quantum efficiency is dramatically improved, and the peak emission intensity is also sufficient. It can be confirmed that the color rendering property is not impaired.
- the present SCASN-based red phosphor is preferably excited as blue light, exhibits high luminance red light emission, and exhibits high color rendering when packaged, and thus is suitable as a phosphor for white LED using blue light as a light source. It can be used and can be suitably used for light-emitting devices such as lighting fixtures and image display devices.
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Abstract
Description
前記一般式中のMは、Eu、Sr、Mg、Ca、Baの中から選ばれる、EuとSrとCaを必須とする少なくとも3種以上の元素からなる元素群であり、Eu含有率が4.5質量%以上7.0質量%以下、Sr含有率が34.0質量%以上42.0質量%以下、Ca含有率が0.8質量%以上3.0質量%以下であり、
455nmの波長の光により励起される際の内部量子効率が71%以上である
ことを特徴とする赤色蛍光体。
原料を混合する混合工程と、
混合工程後の原料を焼成して赤色蛍光体を形成する焼成工程と
を含み、
前記一般式中のMは、Eu、Sr、Mg、Ca、Baの中から選ばれる、EuとSrとCaを必須とする少なくとも3種以上の元素からなる元素群であり、
得られる前記赤色蛍光体において、Eu含有率が4.5質量%以上7.0質量%以下、Sr含有率が34.0質量%以上42.0質量%以下、Ca含有率が0.8質量%以上3.0質量%以下であり、
得られる前記赤色蛍光体の、455nmの波長の光により励起される際の内部量子効率が71%以上である
ことを特徴とする、赤色蛍光体の製造方法。
以下に実施例と比較例で示す本発明蛍光体の製造方法、評価方法について、具体的に説明する。比較例a1の蛍光体は、原料の混合工程および焼成工程を経ることによって製造され、アニール工程は課さずに製造されたものである。
比較例a1の蛍光体の原料として、α型窒化ケイ素粉末(Si3N4、SN-E10グレード、宇部興産社製)63.1g、窒化アルミニウム粉末(AlN、Eグレード、トクヤマ社製)55.3g、酸化ユーロピウム粉末(Eu2O3、RUグレード、信越化学工業社製)14.3gを予め予備混合し、次いで水分が1質量ppm以下、酸素分が1質量ppm以下である窒素雰囲気に保持したグローブボックス中で窒化カルシウム粉末(Ca3N2、Materion社製)6.0g、窒化ストロンチウム粉末(Sr3N2、純度2N、高純度化学研究所社製)111.3g、をさらに加えて乾式混合し、原料混合粉末を得た。この原料混合粉末250gを、タングステン製の蓋付き容器に充填した。
得られた蛍光体について、X線回折装置(株式会社リガク製UltimaIV)を用い、CuKα線を用いた粉末X線回折パターンによりその結晶構造を確認した。この結果、得られた比較例a1の蛍光体の粉末X線回折パターンには、CaAlSiN3結晶と同一の回折パターンが認められた。
得られた蛍光体中のEu、Sr、Ca含有率は、加圧酸分解法により前記蛍光体を溶解させた後、ICP発光分光分析装置(株式会社リガク製、CIROS-120)を用いて定量分析した。その結果、比較例a1の蛍光体中のEu含有率は5.1質量%、Sr含有率は40.0質量%、Ca含有率は2.2質量%であった。
半値幅は次の様に測定を行った。まず、反射率が99%の標準反射板(Labsphere社製、CSRT-99-020、スペクトラロン)を積分球に取り付け、この積分球に、発光光源(Xeランプ)から455nmの波長に分光した単色光を光ファイバーを用いて導入した。この単色光を励起源とした励起スペクトルを分光光度計(大塚電子社製、MCPD-7000)を用いて測定した。その際、445~465nmの波長範囲のスペクトルから励起光フォトン数(Qex)を算出した。次いで、標準反射板の代わりに凹部のセルに表面が平滑になる様に充填した蛍光体をセットし、蛍光体の蛍光スペクトルを測定、得られたスペクトルデータから半値幅を得た。この結果、比較例a1の蛍光体が発した発光スペクトルの半値幅は75nmであった。
蛍光体の蛍光特性は、ローダミンBと副標準光源により補正した分光蛍光光度計(日立ハイテクノロジーズ社製、F-7000)を用いて評価した。測定には、光度計に付属の固体試料ホルダーを使用し、励起波長455nmでの蛍光スペクトルを求めた。この結果、比較例a1の蛍光体が発した蛍光スペクトルのピーク波長は640nmであった。なお蛍光体の輝度は、測定装置や条件によって変化するため、比較例a1の蛍光スペクトルのピーク強度の値を100%として、他の実施例と比較例の評価基準とした。
上記比較例a1の蛍光体をそれぞれLuAG黄色蛍光体(波長455nmの励起光を受けた際の発光のピーク波長が535nm)と共にシリコーン樹脂に添加し、脱泡・混練した後、ピーク波長450nmの青色LED素子を接合した表面実装タイプのパッケージにポッティングし、更にそれを熱硬化させることによって白色LEDを作製した。SCASN蛍光体とLuAG蛍光体との添加量比は、通電発光時に白色LEDの色度座標(x、y)が(0.45、0.41)になるように調整した。
内部量子効率は次の様に測定を行った。常温下で、積分球(φ60mm)の側面開口部(φ10mm)に反射率が99%の標準反射板(Labsphere社製、スペクトラロン)をセットした。この積分球に、発光光源(Xeランプ)から455nmの波長に分光した単色光を光ファイバーにより導入し、反射光のスペクトルを分光光度計(大塚電子社製、MCPD-7000)により測定した。その際、445~465nmの波長範囲のスペクトルから励起光フォトン数(Qex)を算出した。次に、凹型のセルに表面が平滑になるように蛍光体を充填したものを積分球の開口部にセットし、波長455nmの単色光を照射し、励起の反射光及び蛍光のスペクトルを分光光度計により測定した。得られたスペクトルデータから励起反射光フォトン数(Qref)及び蛍光フォトン数(Qem)を算出した。励起反射光フォトン数は、励起光フォトン数と同じ波長範囲で、蛍光フォトン数は、465~800nmの範囲で算出した。得られた三種類のフォトン数から外部量子効率(=Qem/Qex×100)、吸収率(=(Qex-Qref)/Qex×100)、内部量子効率(=Qem/(Qex-Qref)×100)を求めた。
比較例a1と同じ原料粉末を使用し、蛍光体中のEu、Sr、Ca含有率を変えた以外は、比較例a1と同じ製造条件で、比較例a2~a7、実施例a1の蛍光体の粉末を作製した。得られたサンプルの粉末X線回折パターンには、いずれもCaAlSiN3結晶と同一の回折パターンが認められた。
原料の混合工程、焼成工程、およびアニール工程を経て製造する蛍光体として、実施例b1を以下のように製造した。比較例a1で得られた焼成粉をタングステン容器に充填し、カーボンヒーターを備えた電気炉内に速やかにセットして、炉内を0.1PaG以下まで十分に真空排気した。真空排気を継続したまま加熱を開始し、600℃到達後からは炉内にアルゴンガスを導入し、炉内雰囲気圧力を0.2MPaGとした。アルゴンガスの導入開始後も1300℃まで昇温を続け、昇温後1300℃で8時間のアニール処理を行い、その後加熱を終了して冷却させた。室温まで冷却した後、容器から回収して、目開き75μmの篩を通過した粉末を得た。得られた粉末を実施例b1に係る蛍光体とした。実施例b1に係る蛍光体に対して、上述した実施例a1と同様に、内部量子効率、ピーク波長、半値幅、ピーク発光強度、パッケージ特性の評価を行った。なおアニール工程によって組成は変化しないと考えられるため、実施例b1のEu、Sr、Ca含有率は比較例a1と同様である。
実施例b2~b4は、実施例b1で使用した焼成粉末の代わりに、それぞれ比較例a2、比較例a3、実施例a1で得られた焼成粉末を使用した以外は実施例b1と同じ条件で作製した。また比較例b1は、実施例b1で使用した焼成粉末の代わりに、比較例a4で得られた焼成粉末を使用した以外は実施例b1と同じ条件で作製した。
実施例b5、b6は、アニール処理の保持温度をそれぞれ1200℃、1500℃とした以外は実施例b1と同じ条件で作製した。
実施例b7、b8は、アニール処理時の炉内雰囲気圧力をそれぞれ0.01MPaG、0.6MPaGとした以外は実施例b1と同じ条件で作製した。
実施例b9、b10は、アニール処理時の雰囲気ガスをそれぞれ水素、窒素にした以外は実施例b1と同じ条件で作製した。
実施例b11は、実施例b1で使用した焼成粉末の代わりに、比較例a5で得られた焼成粉末を使用した以外は実施例b1と同じ条件で作製した。
比較例b2、b3は、アニール処理時の保持温度をそれぞれ1000℃、1700℃とした以外は実施例b1と同じ条件で作製した。
比較例b4は、アニール処理時の炉内雰囲気圧力を0.7MPaGとした以外は実施例b1と同じ条件で作製した。
Claims (9)
- 主結晶相がCaAlSiN3と同一の結晶構造を有する、一般式がMAlSiN3で示される赤色蛍光体であって、
前記一般式中のMは、Eu、Sr、Mg、Ca、Baの中から選ばれる、EuとSrとCaを必須とする少なくとも3種以上の元素からなる元素群であり、Eu含有率が4.5質量%以上7.0質量%以下、Sr含有率が34.0質量%以上42.0質量%以下、Ca含有率が0.8質量%以上3.0質量%以下であり、
455nmの波長の光により励起される際の内部量子効率が71%以上である
ことを特徴とする赤色蛍光体。 - 紫外線から可視光の領域の光を吸収して、発光ピーク波長が635nm~650nmの範囲で発光し、かつ発光スペクトルの半値幅が80nm以下である、請求項1に記載の赤色蛍光体。
- 前記一般式中のMが、Eu、Sr、およびCaからなる元素群である、請求項1または2に記載の赤色蛍光体。
- 請求項1~3のいずれか一項に記載の赤色蛍光体を含む発光部材。
- 請求項4に記載の発光部材を有する発光装置。
- 主結晶相がCaAlSiN3と同一の結晶構造を有する、一般式がMAlSiN3で示される赤色蛍光体の製造方法であって、
原料を混合する混合工程と、
混合工程後の原料を焼成して赤色蛍光体を形成する焼成工程と
を含み、
前記一般式中のMは、Eu、Sr、Mg、Ca、Baの中から選ばれる、EuとSrとCaを必須とする少なくとも3種以上の元素からなる元素群であり、
得られる前記赤色蛍光体において、Eu含有率が4.5質量%以上7.0質量%以下、Sr含有率が34.0質量%以上42.0質量%以下、Ca含有率が0.8質量%以上3.0質量%以下であり、
得られる前記赤色蛍光体の、455nmの波長の光により励起される際の内部量子効率が71%以上である
ことを特徴とする、赤色蛍光体の製造方法。 - 得られる前記赤色蛍光体が、紫外線から可視光の領域の光を吸収して、発光ピーク波長が635nm~650nmの範囲で発光し、かつ発光スペクトルの半値幅が80nm以下である、請求項6に記載の製造方法。
- 前記焼成工程の後にさらに、アニール焼成を実施するアニール処理工程を含む、請求項6または7に記載の製造方法。
- 前記アニール処理工程が、不活性ガス雰囲気下、温度1100℃以上1650℃以下、圧力0.65MPaG以下の条件で行われる、請求項8に記載の製造方法。
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JPWO2019073864A1 (ja) | 2020-11-05 |
KR102620016B1 (ko) | 2024-01-03 |
US20200251619A1 (en) | 2020-08-06 |
TW201923038A (zh) | 2019-06-16 |
US11380822B2 (en) | 2022-07-05 |
TWI796370B (zh) | 2023-03-21 |
JP7217709B2 (ja) | 2023-02-03 |
KR20200066337A (ko) | 2020-06-09 |
CN111201304A (zh) | 2020-05-26 |
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