WO2009154058A1 - Epoxy resin molding material for semiconductor sealing purposes, epoxy resin sheet for semiconductor sealing purposes, and method for the production thereof - Google Patents

Abstract

Provided is an epoxy resin molding material for semiconductor sealing purposes, obtained by melt-milling at least (1-A) crystalline poly-a-olefin of melting point 30 to 90°C in a powder and/or spray-like form of particle diameter 75 µm or below, (1-B) epoxy resin and (1-C) inorganic filler, the epoxy resin molding material containing from 0.2 to 5 mass% of said crystalline poly-a-olefin.  Also provided are an excellent epoxy resin molding material for semiconductor sealing purposes having a very low failure rate (due to incomplete filling, wire displacement, void formation, semiconductor movement etc.) on molding the resin seal of a semiconductor element by transfer molding, and a method for producing same, wherein the epoxy resin composition for semiconductor sealing purposes is produced by spraying and adding the crystalline poly-a-olefin of melting point 30 to 90°C in the molten state.  Furthermore, provided is an epoxy resin sheet for semiconductor sealing purposes having a sealing layer comprising sealing material wherein at least (2-A) crystalline poly-a-olefin of melting point 30 to 90°C in a powder and/or spray-like form of particle diameter 50 µm or below, (2-B) epoxy resin and (2-C) inorganic filler have been melt-milled and wherein from 0.2 to 5 mass% of said crystalline poly-a-olefin is included, and a protective film on one side or both sides of said sealing layer.  Also provided are an excellent epoxy resin sheet for semiconductor sealing purposes having a very low failure rate (due to incomplete filling, wire displacement, void formation, semiconductor movement etc.) on molding the resin seal of a semiconductor element by press-bond molding, and a method for producing same, said method including a process wherein crystalline poly-a-olefin of melting point 30 to 90°C is sprayed in the molten state and a sealing material is produced, and a process wherein crystalline poly-a-olefin of melting point from 30 to 90°C is coated or sprayed in the molten state onto a protective film and a peelable layer is formed.

Description

Epoxy resin molding material for semiconductor encapsulation, epoxy resin sheet member for semiconductor encapsulation, and manufacturing method thereof

The present invention relates to an epoxy resin molding material for semiconductor encapsulation, an epoxy resin sheet member for semiconductor encapsulation, and a method for producing them. More specifically, when a semiconductor device is encapsulated with a resin by a transfer molding method, particularly when the semiconductor device is encapsulated with a resin by a collective encapsulation method, an epoxy resin molding material for encapsulating a semiconductor, a method for manufacturing the same, and a semiconductor The present invention relates to an epoxy resin sheet member for semiconductor sealing suitable for resin sealing an apparatus by a collective sealing method and a method for manufacturing the same.

In response to rapid technological progress in the information and communication field, there is a strong demand for improved performance, lighter and shorter, and lower cost of electronic equipment. This demand has spread mass production methods in which semiconductors are sealed by transfer molding using inexpensive molding materials. This method is a method of sealing a semiconductor by melting and flowing a molding material in a mold. At present, a method of individually encapsulating a large number of semiconductors with resin is the mainstream. In recent years, in order to promote further rationalization and cost reduction, a batch sealing method has been proposed and has been partly adopted. The collective sealing method here is a general term for a method of resin-sealing a child substrate on which semiconductor elements are arranged and mounted, and indicates a resin sealing method of a semiconductor device called MAP (molding array package) in the semiconductor industry. The batch sealing method is greatly superior in efficiency as compared with the conventional method. For example, there are advantages such that the use amount of the sub-substrate and the molding material can be reduced, the size of the mold can be reduced and the types can be reduced.

However, the batch sealing method has various technical problems and has not been widely used. For example, it is difficult to cut into individual semiconductor devices due to warping at the time of molding, and 3DP (laminated package) in which the gap between the external electrode connecting gold wires is narrow is likely to cause gold wire deformation. In the system in package), there is a problem that it is difficult to fill the molding material with details. That is, practical and industrial technical studies are still insufficient, and the problem has not been solved.

In the batch sealing method, the molding material is injected onto the semiconductor mounting substrate at a high temperature of 130 ° C. or higher (for example, 150 ° C. to 180 ° C.) and cured. Warpage is a phenomenon in which when a molded product is cooled to room temperature, it bends to a resin side having a large shrinkage rate. This reduction method generally reduces the coefficient of thermal expansion of the molding material and brings it closer to a semiconductor. Specifically, a method is employed in which the amount of silica added is increased and the softening point of the resin component (epoxy resin, curing agent) is lowered. However, there are problems such as molding defects due to an increase in the viscosity of the molding material (unfilled, generation of voids) and workability deterioration due to outflow of resin components to the mold surface. In addition, in 3DP and SiP in which fine filling is important, it is necessary to atomize silica, which is a solid component of the molding material, and it is difficult to avoid an increase in the viscosity of the molding material. As a result, defects such as gold wire deformation and semiconductor movement occur.

Molding material is added with a small amount of release agent to facilitate removal of the molded product from the mold. As the mold release agent, long chain fatty acid esters, long chain fatty acid metal salts, long chain fatty acids and the like are mainly used. Although there is an example in which a small amount of polyolefin is used, a modified product (oxidized polyethylene wax or the like) is used in order to improve adhesion to a semiconductor or a lead frame. In addition, an example in which thermoplastic resins are added to relieve stress caused by warpage of a molded product has been reported. In this case, a thermoplastic elastomer that is mainly excellent in flexibility but poor in fluidity is used.

Resin sealing by semiconductor transfer molding is the most popular method for sealing semiconductor devices. In the semiconductor industry, expectations for a more rational and efficient batch sealing method are extremely high, and there is a strong demand for solving the problems of this method.

On the other hand, in order to solve the above problems, a molding method for shortening the flow distance of the sealing material has been studied. In this method, the sealing material is spread over the entire semiconductor substrate and heated and melted, followed by pressure bonding and further pressure heating to manufacture a semiconductor device (hereinafter referred to as pressure bonding molding). However, the molding defect problem is not improved if the existing sealing material is used even if crimping is used. In other words, practical and industrial technical studies are still insufficient and the problem has not been solved.

As described above, in the semiconductor industry, the expectation for a rational and efficient batch sealing method is extremely high, so that there is a strong demand for solving the problems of this method. The inventors of the present invention provide a new sealing material suitable for a batch sealing method by pressure molding that enables further reduction in the thickness and cost of a semiconductor device.

Generally, a peelable film has a peelable layer formed on a thermoplastic resin film. For example, it is coated with an easily peelable resin (urethane-based, acrylic-based, polyester-based, polyvinyl alcohol-based resins) or a release agent (silicone-based, fluorine-based resins). Film materials that meet the required level of heat resistance and solvent resistance are used.

Japanese Patent Laid-Open No. 6-211963 Japanese Patent Laid-Open No. 8-012850 JP-A-10-204256 JP 2000-007885 A JP 2000-281750 A JP 2004-224849 A Japanese Patent Application Laid-Open No. 2004-3000239 Japanese Patent Laid-Open No. 11-333869 Japanese Patent Laid-Open No. 2002-212529 Japanese Patent Laid-Open No. 2004-155853 JP 2006-117919 A JP 2007-031585 A

Under the circumstances as described above, the present invention provides an excellent semiconductor encapsulation in which resin molding by transfer molding of a semiconductor element has very few defects during molding (unfilled, gold wire deformation, void generation, semiconductor movement, etc.). Epoxy resin molding material for fastening, in particular, resin sealing by crimping of semiconductor elements, with the primary purpose of providing an epoxy resin molding material for semiconductor sealing that is optimal for the transfer molding batch sealing method and its manufacturing method , Excellent epoxy resin sheet material for semiconductor encapsulation, especially the semiconductor sealing that is most suitable for the pressure-bonding batch sealing method, with very few defects during molding (unfilled, gold wire deformation, void generation, semiconductor movement, etc.) It is the second object to provide an epoxy resin sheet member for use in the present invention and a method for producing the same.

As a result of intensive research, the inventors of the present invention preferably melt-kneaded a specific amount of crystalline polyalphaolefin having a specific melting point and particle size sprayed in a molten state, an epoxy resin and an inorganic filler. The above-mentioned first object can be achieved by an epoxy resin molding material for semiconductor encapsulation, and preferably a crystalline polyalphaolefin having a specific melting point and particle size sprayed in a molten state, an epoxy resin, and It has been found that the second object can be achieved by an epoxy resin sheet member for semiconductor encapsulation formed by melt-kneading an inorganic filler. The present invention has been completed based on such findings.
That is, the present invention
1. At least (1-A) crystalline polyalphaolefin having a melting point of 30 to 90 ° C. and / or mist with a particle size of 75 μm or less, (1-B) epoxy resin, and (1-C) inorganic filler An epoxy resin molding material for semiconductor encapsulation, which is obtained by melt-kneading, and contains 0.2-5% by mass of the crystalline polyalphaolefin,
2. 2. The epoxy resin molding material for semiconductor encapsulation according to 1 above, wherein the crystalline polyalphaolefin starts melting within −15 ° C. of the melting point and ends melting within + 3 ° C.,
3. 2. The epoxy resin molding material for semiconductor encapsulation according to 1 above, wherein the (1-C) inorganic filler is silica powder,
4). 2. The epoxy resin molding material for semiconductor encapsulation according to 1 above, which contains 80% by mass or more of the (1-C) inorganic filler,
5). 2. The method for producing an epoxy resin molding material for semiconductor encapsulation according to 1 above, wherein the crystalline polyalphaolefin having a melting point of 30 to 90 ° C. is added by spraying in a molten state,
6). At least (2-A) crystalline polyalphaolefin having a melting point of 30 to 90 ° C. and / or mist with a particle size of 50 μm or less, (2-B) epoxy resin, and (2-C) inorganic filler An epoxy resin sheet member for semiconductor encapsulation having a sealing layer made of a sealing material containing 0.2 to 5% by mass of the crystalline polyalphaolefin, An epoxy resin sheet member for semiconductor encapsulation having a protective film on one or both sides of the sealing layer,
7). 7. The epoxy resin sheet member for semiconductor encapsulation according to 6 above, wherein the crystalline polyalphaolefin starts melting within −15 ° C. of the melting point and ends melting within + 3 ° C.,
8). 7. The epoxy resin sheet member for semiconductor encapsulation as described in 6 above, which has a release layer having a thickness of 0.1 to 10 μm containing crystalline polyalphaolefin having a melting point of 30 to 90 ° C. on the sealing layer side of the protective film. And 9. A process for producing a sealing material by spraying a crystalline polyalphaolefin having a melting point of 30 to 90 ° C. in a molten state, and applying or spraying a crystalline polyalphaolefin having a melting point of 30 to 90 ° C. to the protective film in a molten state And a step of forming a release layer, and the method for producing an epoxy resin sheet member for semiconductor encapsulation according to 6 above,
Is to provide.

The epoxy resin molding material for semiconductor encapsulation of the present invention is excellent in the occurrence of defects during molding (unfilled, gold wire deformation, void generation, semiconductor movement, etc.) in resin sealing by transfer molding of semiconductor elements. It is an epoxy resin molding material for semiconductor encapsulation. In addition, the epoxy resin sheet member for semiconductor sealing of the present invention has very little occurrence of defects during molding (unfilled, gold wire deformation, void generation, semiconductor movement, etc.) in resin sealing by pressure-bonding molding of semiconductor elements. It is an excellent epoxy resin sheet member for semiconductor encapsulation.

It is a figure which shows the example of a packaged semiconductor device. FIG. 6 is a graph showing melting characteristics of crystalline polyalphaolefin and paraffin wax obtained in Production Example 1-3 and Production Example 2-5. FIG. 6 is a graph showing the melting characteristics of crystalline polyalphaolefins having different melting points obtained in Production Examples 1-2 to 1-4 and Production Examples 2-2, 2-5, and 2-6.

1: Molding material 2: Semiconductor 3: Gold wire 4: Substrate 5: Semiconductor device

(First invention)
The epoxy resin molding material for semiconductor encapsulation of the present invention comprises at least (1-A) powder and / or mist of crystalline polyalphaolefin having a melting point of 30 to 90 ° C. and having a particle size of 75 μm or less, ) An epoxy resin molding material for semiconductor encapsulation obtained by melt-kneading an epoxy resin and (1-C) inorganic filler, containing 0.2 to 5% by mass of the crystalline polyalphaolefin.

The crystalline polyalphaolefin having a melting point of 30 to 90 ° C. (hereinafter sometimes abbreviated as crystalline polyalphaolefin) used in the component (1-A) is not particularly limited as long as it satisfies the above requirements. However, it is obtained by polymerizing one or more α-olefin monomers having 10 or more carbon atoms or polymerizing one or more α-olefin monomers having 10 or more carbon atoms with other olefins. Are preferred.
Specific examples of the α-olefin monomer having 10 or more carbon atoms include 1-decene, 1-undecene, 1-dodecene, 1-tridecene, 1-tetradecene, 1-pentadecene, 1-hexadecene, 1-heptadecene, 1-octadecene, 1-nonadecene, 1-eicosene, 1-henecocene, 1-docosene, 1-tricosene, 1-tetracocene, 1-pentacocene, 1-hexacocene, 1-heptacocene, 1-octacocene, 1-nonacocene, 1- Tria content, 1-Hentria content, 1-Dotria content, 1-Tritria content, 1-Tetratria content, 1-Pentatria content, 1-Hexatria content, 1-Tetra content, 1-Penta content, 1 -Hexacontene, 1-heptaconten, 1-octaconten, 1- Nakonten, 1-octa nona contency, 1 Nonanonakonten, 1 Hekuten, 1 Henhekuten, 1 Dohekuten, 1 Torihekuten and the like, these things of carbon atoms 18-40 are preferably used.
The above α-olefin monomers can be used alone, or a mixture of two or more α-olefin monomers can also be used.
Also, as two or more kinds of α-olefin monomers, it is possible to use commercial products of blended monomers or commercial products of mixtures, such as Linearlen 2024 [manufactured by Idemitsu Kosan Co., Ltd .: Commodity Name] etc. can be used.

In the present invention, when polymerizing the α-olefin monomer to obtain a crystalline polyalphaolefin, a metallocene compound or a Ti—Mg compound is preferably used as a catalyst.
Examples of the metallocene compound include dimethylsilylene bis (2-methyl-4,5-benzoindenyl) zirconium dichloride, dimethylsilylene bis (2-methyl-4-phenylindenyl) zirconium dichloride, dimethylsilylene bis (2-methyl-4). -Naphthylindenyl) zirconium dichloride, dimethylsilylenebis (2-methylindenyl) zirconium dichloride, ethylenebis (2-methylindenyl) zirconium dichloride, (1,2'-dimethylsilylene) (2,1'-dimethylsilylene) ) Bis (3-trimethylsilylmethyl-indenyl) zirconium dichloride, (1,2'-dimethylsilylene) (2,1'-dimethylsilylene) (3-trimethylsilylmethyl-indenyl) (indenyl) zirconium Dichloride, (1,2'-dimethylsilylene) (2,1'-dimethylsilylene) bis (indenyl) zirconium dichloride, (1,2'-dimethylsilylene) (2,1'-dimethylsilylene) bis (3-n -Butyl-indenyl) zirconium dichloride, (1,2'-dimethylsilylene) (2,1'-dimethylsilylene) (n-butyl-indenyl) (indenyl) zirconium dichloride, (1,2'-dimethylsilylene) (2 , 1′-dimethylsilylene) bis (indenyl) zirconium dichloride, 1,1′-dimethylsilylenebis (2-ethyl-4- (2-fluoro-4-biphenylyl) -4H-azurenyl) zirconium dichloride, and dimethylsilylene ( Cyclopentadienyl) (2,4-dimethyl-4H-1-azuleni ) Zirconium dichloride compounds such as zirconium dichloride; and zirconium compounds such as compounds obtained by substituting dichloride of these zirconium dichloride compounds with dimethyl or dibenzyl; and titanium compounds or hafnium compounds obtained by substituting zirconium of these zirconium compounds with titanium or hafnium. Is mentioned. These metallocene compounds may be used in combination of two or more.
In addition to the metallocene compound, an organoaluminum compound such as triisobutylaluminum and an organoboron compound such as dimethylanilinium tetrakispentafluorophenylborate are usually used as the catalyst.

The epoxy resin molding material for semiconductor encapsulation of the present invention contains 0.2 to 5% by mass, preferably 0.5 to 3% by mass of the crystalline polyalphaolefin, so that it has excellent fluidity. If the content of the crystalline polyalphaolefin is less than 0.2% by mass, the effect of improving the fluidity cannot be obtained, and if it exceeds 5% by mass, problems such as a decrease in strength of the molded product occur.
As the crystalline polyalphaolefin, one having a melting point of 30 to 90 ° C., preferably 40 to 80 ° C. is used. If the melting point of the crystalline polyalphaolefin is less than 30 ° C., problems such as fusion during pulverization or tableting occur, so the workability during the production of the epoxy resin molding material for semiconductor encapsulation deteriorates, and the above melting point If the temperature exceeds 90 ° C., the fluidity during molding decreases, and molding defects due to unfilling and voids are likely to occur.
The crystalline polyalphaolefin is used as a powder and / or mist having a particle size of 75 μm or less, preferably 25 μm or less. If the particle size exceeds 75 μm, there is a possibility that problems such as elution occur during molding.
When a crystalline polyalphaolefin powder is used as the component (1-A), for example, the raw crystalline polyalphaolefin is finely pulverized using a cutter mill or the like, and a sieve having a predetermined mesh is used. By using, a powder having a desired particle size or less can be obtained. In addition, when using a crystalline polyalphaolefin mist, the crystalline polyalphaolefin can be melt sprayed and added to other raw materials. The particle size can be arbitrarily controlled by appropriately adjusting the diameter, spraying pressure, etc.), so the use of a mist is preferred. The particle size of the atomized crystalline polyalphaolefin can be confirmed by spraying the crystalline polyalphaolefin on a transparent film and measuring the particle size of droplets on the film.
It is preferable to use a crystalline polyalphaolefin having a narrow melting temperature range, and specifically, one that starts melting within −15 ° C. of the melting point and ends melting within + 3 ° C. is preferable. Here, the temperature at which the crystalline polyalphaolefin starts to melt was determined by using a differential scanning calorimeter (DSC-7) manufactured by PerkinElmer, Inc., holding the sample at 190 ° C. for 5 minutes in a nitrogen atmosphere, and then −30 The temperature is decreased to 5 ° C / min to 5 ° C / min, held at -30 ° C for 5 min, and then the endothermic temperature is started when the temperature is increased to 190 ° C at 10 ° C / min. The temperature at which the temperature disappeared.

Generally, paraffin wax having a similar melting point is known as a competitor of crystalline polyalphaolefin. Comparing the melting characteristics of the two, the crystalline polyalphaolefin used in the present invention is crystalline, and thus has a characteristic that the melting temperature range is extremely narrow as described above. Comparing both with a melting point of about 40 ° C., paraffin wax begins to melt at room temperature and is therefore not suitable for room temperature processing of the molding material. However, crystalline polyalphaolefin is solid at room temperature, so there is no problem. In addition, the crystalline polyalphaolefin is immediately melted at 40 ° C. and the viscosity is lowered. That is, the crystalline polyalphaolefin used in the present invention has a feature that the melting temperature range is extremely narrow, and thus the workability during the manufacturing process of the molding material and the fluidity during molding are excellent.

Crystalline polyalphaolefin is excellent in thermal stability and has less quality change (oxidation, etc.) at high temperature storage than general-purpose polyolefin wax. Usually, the polyolefin wax has a high melting point of 100 ° C. or higher, and is used as a release agent for a thermoplastic resin molding material. In the case of a thermosetting resin molding material, the effect of releasability cannot be expected so much and it is used as an additive for improving adhesion and tackiness. In this case as well, quality stability in the molding material is maintained by using an oxidized product that has been altered in advance. That is, crystalline polyalphaolefin has different characteristics from polyolefin wax used as a conventional release agent.

Examples of the (1-B) epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin and the like (bisphenol A diglycidyl ether, bisphenol AD diglycidyl ether, bisphenol S diglycidyl ether, Bisphenol F diglycidyl ether, bisphenol G diglycidyl ether, tetramethylbisphenol A diglycidyl ether, bisphenol hexafluoroacetone diglycidyl ether, bisphenol C diglycidyl ether, etc.), novolaks such as phenol novolac type epoxy resin and cresol novolac type epoxy resin Type epoxy resin, 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexylcarboxylate Biphenyl type, which is the mainstream of nitrogen-containing ring epoxy resins such as alicyclic epoxy resins such as triglycidyl isocyanurate, hydantoin epoxy resins, hydrogenated bisphenol A type epoxy resins, aliphatic epoxy resins, and low water absorption rate cured type Epoxy resin, dicyclocyclic epoxy resin, naphthalene type epoxy resin, trimethylolpropane polyglycidyl ether, glycerol polyglycidyl ether, polyfunctional epoxy resin such as pentaerythritol polyglycidyl ether, fluorine-containing epoxy resin such as bisphenol AF type epoxy resin, Examples include (meth) acrylic acid glycidyl ester. These may be used alone or in combination of two or more.
Specific examples of the (1-B) epoxy resin include various products that are commercially available for semiconductor encapsulating materials. Examples include epoxy resins manufactured by Nippon Kayaku, Dainippon Ink and Chemicals, and JER. be able to. In the encapsulating molding material, polyaromatic low molecular weight products are mainly used as epoxy resins.
The (1-B) epoxy resin may be solid or liquid at room temperature, but in general, the (1-B) epoxy resin used preferably has an average epoxy equivalent of 100 to 2000. When the average epoxy equivalent is less than 100, the cured product of the epoxy resin molding material for semiconductor encapsulation may become brittle. Moreover, when an average epoxy equivalent exceeds 2000, the glass transition temperature (Tg) of the hardening body may become low.

Examples of the (1-C) inorganic filler include silica, alumina, silicon nitride, silicon carbide, talc, calcium silicate, calcium carbonate, mica, clay, titanium white and other powders, and short fibers such as glass and carbon. Illustrated. Among these, silica, alumina, silicon nitride, and silicon carbide powder are preferable from the viewpoint of thermal expansion coefficient and thermal conductivity, and silica powder is particularly preferable. The epoxy resin molding material for semiconductor encapsulation of the present invention is excellent in fluidity, but if it contains silica powder, the effect of improving fluidity is remarkably obtained. Furthermore, considering the fluidity of the epoxy resin molding material for semiconductor encapsulation of the present invention, the shape is preferably spherical or a mixture of spherical and irregular shapes. As said silica powder, it can select arbitrarily from the product marketed as an object for semiconductor sealing materials, for example. Specifically, silica powder made by Tatsumori, Denki Kagaku Kogyo, or Micron Corporation can be mentioned, and a sprayed spherical product from which coarse particles are removed is mainly used.
The epoxy resin molding material for semiconductor encapsulation of the present invention preferably contains 80 to 98% by mass of (1-C) inorganic filler, more preferably 85 to 95% by mass.

The epoxy resin molding material for semiconductor encapsulation of the present invention has an epoxy resin curing agent, an epoxy resin curing accelerator, a modifier, a flame retardant, a pigment, a mold release agent, and the like as long as the effects of the present invention are not adversely affected. As these components, those having usable characteristics can be used as appropriate, and can be arbitrarily selected from products commercially available for semiconductor sealing materials, etc. . Specific examples of these components include: Dainippon Ink and Chemicals, Gunei Chemical Industry, Meiwa Kasei Co., Ltd., epoxy resin curing agent, Shikoku Chemicals, Hokuko Chemical Industry, San Apro Co., Ltd. epoxy resin curing accelerator. it can. In the encapsulating molding material, a polyaromatic low molecular weight product is mainly used as an epoxy resin curing agent, and a phosphorus compound is mainly used as an epoxy resin curing accelerator.

The method for producing the epoxy resin molding material for semiconductor encapsulation of the present invention is not particularly limited, but it is preferable to uniformly disperse the component (1-A). Particularly, the epoxy for semiconductor encapsulation of the present invention shown below is particularly preferable. According to the method for producing a resin molding material, the (1-A) component can be uniformly dispersed, which is preferable.

The present invention also provides a method for producing an epoxy resin molding material for semiconductor encapsulation, wherein the crystalline polyalphaolefin having a melting point of 30 to 90 ° C. is sprayed and added in a molten state.
The spraying conditions such as the melting temperature, the nozzle diameter, and the spraying pressure when adding the crystalline polyalphaolefin in a molten state are particularly limited as long as the atomized crystalline polyalphaolefin has a desired particle size or less. In addition, for example, the melting temperature is about 50 to 200 ° C., the nozzle diameter is about 0.001 to 0.1 mm, and the spraying pressure is about 0.1 to 10 atm, depending on the properties of the crystalline polyalphaolefin used.
In the method for producing an epoxy resin molding material for semiconductor encapsulation of the present invention, crystalline polyalphaolefin is added by spraying in a molten state, but at least (1-B) epoxy resin and (1-C) inorganic filling A method of adding the crystalline polyalphaolefin while mixing the raw materials containing the material is preferable, and a method of adding the crystalline polyalphaolefin while mixing all the raw materials other than the crystalline polyalphaolefin is particularly preferable.

(Second invention)
The epoxy resin sheet member for semiconductor encapsulation of the present invention comprises at least (2-A) powder and / or mist of crystalline polyalphaolefin having a melting point of 30 to 90 ° C. and a particle size of 50 μm or less, (2-B A semiconductor encapsulant having an encapsulating layer formed by melt-kneading an epoxy resin and (2-C) an inorganic filler and comprising an encapsulating material containing 0.2 to 5% by mass of the crystalline polyalphaolefin An epoxy resin sheet member for stopping, further having a protective film on one or both sides of the sealing layer.

The crystalline polyalphaolefin having a melting point of 30 to 90 ° C. (hereinafter sometimes abbreviated as crystalline polyalphaolefin) is not particularly limited as long as it satisfies the above-mentioned regulations. A polymer obtained by polymerizing at least one olefin monomer or polymerizing at least one α-olefin monomer having 10 or more carbon atoms with another olefin is preferred.
Specific examples of the α-olefin monomer having 10 or more carbon atoms include 1-decene, 1-undecene, 1-dodecene, 1-tridecene, 1-tetradecene, 1-pentadecene, 1-hexadecene, 1-heptadecene, 1-octadecene, 1-nonadecene, 1-eicosene, 1-henecocene, 1-docosene, 1-tricosene, 1-tetracocene, 1-pentacocene, 1-hexacocene, 1-heptacocene, 1-octacocene, 1-nonacocene, 1- Tria content, 1-Hentria content, 1-Dotria content, 1-Tritria content, 1-Tetratria content, 1-Pentatria content, 1-Hexatria content, 1-Tetra content, 1-Penta content, 1 -Hexacontene, 1-heptaconten, 1-octaconten, 1- Nakonten, 1-octa nona contency, 1 Nonanonakonten, 1 Hekuten, 1 Henhekuten, 1 Dohekuten, 1 Torihekuten and the like, these things of carbon atoms 18-40 are preferably used.
The above α-olefin monomers can be used alone, or a mixture of two or more α-olefin monomers can also be used.
Also, as two or more kinds of α-olefin monomers, it is possible to use commercial products of blended monomers or commercial products of mixtures, such as Linearlen 2024 [manufactured by Idemitsu Kosan Co., Ltd .: Commodity Name] etc. can be used.

In the present invention, when polymerizing the α-olefin monomer to obtain a crystalline polyalphaolefin, a metallocene compound or a Ti—Mg compound is preferably used as a catalyst.
Examples of the metallocene compound include dimethylsilylene bis (2-methyl-4,5-benzoindenyl) zirconium dichloride, dimethylsilylene bis (2-methyl-4-phenylindenyl) zirconium dichloride, dimethylsilylene bis (2-methyl-4). -Naphthylindenyl) zirconium dichloride, dimethylsilylenebis (2-methylindenyl) zirconium dichloride, ethylenebis (2-methylindenyl) zirconium dichloride, (1,2'-dimethylsilylene) (2,1'-dimethylsilylene) ) Bis (3-trimethylsilylmethyl-indenyl) zirconium dichloride, (1,2'-dimethylsilylene) (2,1'-dimethylsilylene) (3-trimethylsilylmethyl-indenyl) (indenyl) zirconium Dichloride, (1,2'-dimethylsilylene) (2,1'-dimethylsilylene) bis (indenyl) zirconium dichloride, (1,2'-dimethylsilylene) (2,1'-dimethylsilylene) bis (3-n -Butyl-indenyl) zirconium dichloride, (1,2'-dimethylsilylene) (2,1'-dimethylsilylene) (n-butyl-indenyl) (indenyl) zirconium dichloride, (1,2'-dimethylsilylene) (2 , 1′-dimethylsilylene) bis (indenyl) zirconium dichloride, 1,1′-dimethylsilylenebis (2-ethyl-4- (2-fluoro-4-biphenylyl) -4H-azurenyl) zirconium dichloride, and dimethylsilylene ( Cyclopentadienyl) (2,4-dimethyl-4H-1-azuleni Z) Zirconium dichloride compounds such as zirconium dichloride; and zirconium compounds such as compounds obtained by substituting dichloride of these zirconium dichloride compounds with dimethyl or dibenzyl; and titanium compounds or hafnium compounds obtained by substituting zirconium of these zirconium compounds with titanium or hafnium. Etc. These metallocene compounds may be used in combination of two or more.
In addition to the metallocene compound, an organoaluminum compound such as triisobutylaluminum and an organoboron compound such as dimethylanilinium tetrakispentafluorophenylborate are usually used as the catalyst.

The sealing material used for the epoxy resin sheet member for semiconductor encapsulation of the present invention contains 0.2 to 5% by mass, preferably 0.5 to 3% by mass of the crystalline polyalphaolefin, so that the fluidity is obtained. It is excellent. If the content of the crystalline polyalphaolefin is less than 0.2% by mass, the effect of improving the fluidity cannot be obtained, and if it exceeds 5% by mass, problems such as a decrease in strength of the molded product occur.
As the crystalline polyalphaolefin, one having a melting point of 30 to 90 ° C., preferably 40 to 80 ° C. is used. If the melting point of the crystalline polyalphaolefin is less than 30 ° C., problems such as fusion during pulverization or tableting occur, so the workability during the production of the epoxy resin sheet member for semiconductor encapsulation deteriorates. Crystalline polyalphaolefin is separated and eluted from the sealing material. When the melting point exceeds 90 ° C., the fluidity during molding is lowered, and thus problems such as variations in the quality of the sealing material may occur.
The crystalline polyalphaolefin is used as a powder and / or mist having a particle size of 50 μm or less, preferably 20 μm or less. When the particle diameter exceeds 50 μm, there is a possibility that problems such as elution during molding may occur.
When the crystalline polyalphaolefin powder is used as the component (2-A), for example, the raw material polyalphaolefin is finely pulverized using a cutter mill or the like, and a sieve having a predetermined opening is used. A powder having a desired particle size or less can be obtained. When a crystalline polyalphaolefin mist is used, the crystalline polyalphaolefin is melt-sprayed and added, but the spraying conditions (melting temperature, nozzle diameter, spraying pressure, etc.) during melt spraying are appropriately set. Since the particle size can be arbitrarily controlled by adjusting, the use of a mist is preferred. The particle size of the atomized (2-A) crystalline polyalphaolefin can be confirmed by spraying the crystalline polyalphaolefin on a transparent film and measuring the particle size of droplets on the film.
The (2-A) crystalline polyalphaolefin preferably has a narrow melting temperature range. Specifically, the melting starts within −15 ° C. of the melting point and ends within + 3 ° C. Is preferred. Here, the temperature at which the (2-A) crystalline polyalphaolefin starts to melt was determined by using a differential scanning calorimeter (DSC-7) manufactured by PerkinElmer and holding the sample at 190 ° C. for 5 minutes in a nitrogen atmosphere. After that, the temperature is lowered to −30 ° C. at 5 ° C./minute, held at −30 ° C. for 5 minutes, and then the endothermic temperature is started when the temperature is raised to 190 ° C. at 10 ° C./minute, and the melting is completed. The temperature was a temperature at which the endotherm was completely eliminated.

Generally, paraffin wax having a similar melting point is known as a competitor of crystalline polyalphaolefin. Comparing the melting characteristics of the two, the crystalline polyalphaolefin used in the present invention is crystalline, and thus has a characteristic that the melting temperature range is extremely narrow as described above. Comparing both with a melting point of about 40 ° C., paraffin wax begins to melt at room temperature and is therefore not suitable for room temperature processing of the molding material. However, crystalline polyalphaolefin is solid at room temperature, so there is no problem. In addition, the crystalline polyalphaolefin is immediately melted at 40 ° C. and the viscosity is lowered. That is, the crystalline polyalphaolefin used in the present invention has a feature that it has excellent workability at the time of manufacturing processing of the molding material and fluidity at the time of molding because the melting temperature range is extremely narrow.

Crystalline polyalphaolefin is excellent in thermal stability and has less quality change (oxidation, etc.) at high temperature storage than general-purpose polyolefin wax. Usually, the polyolefin wax has a high melting point of 100 ° C. or higher, and is used as a release agent for a thermoplastic resin molding material. In the case of a thermosetting resin molding material, the effect of releasability cannot be expected so much and it is used as an additive for improving adhesion and tackiness. In this case as well, quality stability in the molding material is maintained by using an oxidized product that has been altered in advance. That is, crystalline polyalphaolefin has different characteristics from polyolefin wax used as a conventional release agent.

Examples of the (2-B) epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin and the like (bisphenol A diglycidyl ether, bisphenol AD diglycidyl ether, bisphenol S diglycidyl ether, Bisphenol F diglycidyl ether, bisphenol G diglycidyl ether, tetramethylbisphenol A diglycidyl ether, bisphenol hexafluoroacetone diglycidyl ether, bisphenol C diglycidyl ether, etc.), novolaks such as phenol novolac type epoxy resin and cresol novolac type epoxy resin Type epoxy resin, 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexylcarboxylate Biphenyl type, which is the mainstream of nitrogen-containing ring epoxy resins such as alicyclic epoxy resins such as triglycidyl isocyanurate, hydantoin epoxy resins, hydrogenated bisphenol A type epoxy resins, aliphatic epoxy resins, and low water absorption rate cured type Epoxy resin, dicyclocyclic epoxy resin, naphthalene type epoxy resin, trimethylolpropane polyglycidyl ether, glycerol polyglycidyl ether, polyfunctional epoxy resin such as pentaerythritol polyglycidyl ether, fluorine-containing epoxy resin such as bisphenol AF type epoxy resin, Examples include (meth) acrylic acid glycidyl ester. These may be used alone or in combination of two or more.
Specific examples of the (2-B) epoxy resin include various products that are commercially available for semiconductor sealing materials. For example, there are epoxy resins manufactured by Nippon Kayaku, Dainippon Ink and Chemicals, and JER. be able to. In the encapsulating molding material, polyaromatic low molecular weight products are mainly used as epoxy resins.
The (2-B) epoxy resin may be solid or liquid at room temperature, but in general, the (2-B) epoxy resin used preferably has an average epoxy equivalent of 100 to 2000. When the average epoxy equivalent is less than 100, the cured body of the epoxy resin sheet member for semiconductor encapsulation may become brittle. Moreover, when an average epoxy equivalent exceeds 2000, the glass transition temperature (Tg) of the hardening body may become low.

Examples of the (2-C) inorganic filler include silica, alumina, silicon nitride, silicon carbide, talc, calcium silicate, calcium carbonate, mica, clay, titanium white powder and the like, and short fibers such as glass and carbon. Illustrated. Among these, silica, alumina, silicon nitride, and silicon carbide powder are preferable from the viewpoint of thermal expansion coefficient and thermal conductivity, and silica powder is particularly preferable. The sealing material used for the epoxy resin sheet member for semiconductor encapsulation of the present invention is excellent in fluidity, but if it contains silica powder, the effect of improving fluidity is remarkably obtained. Furthermore, considering the fluidity of the sealing material, the shape is preferably spherical or a mixture of spherical and irregular shapes. As said silica, it can select arbitrarily from the product marketed as an object for semiconductor sealing materials, for example. Specifically, silica powder made by Tatsumori, Denki Kagaku Kogyo, or Micron Corporation can be mentioned, and a sprayed spherical product from which coarse particles are removed is mainly used.
The sealing material used for the epoxy resin sheet member for semiconductor encapsulation of the present invention preferably contains 80 to 98% by mass of (2-C) inorganic filler, more preferably 85 to 95% by mass. In particular, when the encapsulating material contains 85% by mass or more of silica having a particle size of 50 μm or less, the viscosity of the encapsulating material has been extremely high in the past, making it difficult to encapsulate the semiconductor device. Since the sealing material used in the process contains crystalline polyalphaolefin, a remarkable effect of excellent fluidity is exhibited.

The sealing material used for the epoxy resin sheet member for semiconductor encapsulation of the present invention is an epoxy resin curing agent, epoxy resin curing accelerator, modifier, flame retardant, and pigment as long as the effects of the present invention are not adversely affected. , May contain mold release agents and other additives, and as these components, those having usable properties can be used as appropriate, and products that are commercially available for semiconductor sealing materials Etc. can be arbitrarily selected. Specific examples of these components include: Dainippon Ink and Chemicals, Gunei Chemical Industry, Meiwa Kasei Co., Ltd., epoxy resin curing agent, Shikoku Chemicals, Hokuko Chemical Industry, San Apro Co., Ltd. epoxy resin curing accelerator. it can. In the encapsulating molding material, the epoxy resin curing agent is mainly a polyaromatic low molecular weight product, and the epoxy resin curing accelerator is mainly a phosphorus compound.

The epoxy resin sheet member for semiconductor encapsulation of the present invention has a protective film on one side or both sides of the sealing layer. The protective film is not particularly limited as long as it is a material having high purity and can withstand pressure forming, and examples thereof include polyethylene terephthalate (PET), liquid crystal polymer, and polyimide (PI). Moreover, since peelability is not particularly required, it can be arbitrarily selected in consideration of quality and cost.
The protective film is preferably provided with a release layer containing crystalline polyalphaolefin having a thickness of about 0.1 to 10 μm on the surface on the sealing layer side, and a release layer made of crystalline polyalphaolefin is provided. More preferably. When the thickness of the release layer is 0.1 μm or more, the protective film can be easily peeled from the sealing layer, and when it is 10 μm or less, problems such as poor appearance of the molded product hardly occur.

The method for producing the sealing material used for the epoxy resin sheet member for semiconductor encapsulation of the present invention is not particularly limited. However, since it is preferable to uniformly disperse the crystalline polyalphaolefin, the crystalline polyalphaolefin is finely pulverized. And a method of spraying in a molten state, but according to the process for producing a sealing material in the method for producing an epoxy resin sheet member for semiconductor encapsulation of the present invention shown below, crystalline polyalphaolefin Is particularly preferable because it can be uniformly dispersed.
In addition, the method of forming a release layer using crystalline polyalphaolefin on the protective film is also particularly limited as long as the crystalline polyalphaolefin is uniformly dispersed on the surface of the protective film on the sealing layer side. Alternatively, after dissolving crystalline polyalphaolefin in a solvent and applying the obtained solution to a protective film, a method of removing the solvent by drying can be used. According to the process of applying or spraying the crystalline polyalphaolefin in the molten state in the production method of the epoxy resin sheet member, it is possible to uniformly disperse the crystalline polyalphaolefin, it is simple, and there is a problem of contamination with foreign matter. Hard to happen.

The present invention also includes a step of producing a sealing material by spraying a crystalline polyalphaolefin having a melting point of 30 to 90 ° C. in a molten state, and melting the crystalline polyalphaolefin having a melting point of 30 to 90 ° C. in the protective film. The manufacturing method of the said epoxy resin sheet member for semiconductor sealing including the process of apply | coating or spraying in a state and forming a peeling layer is also provided.
The spraying conditions such as the melting temperature, the nozzle diameter, and the spraying pressure in the step of spraying the crystalline polyalphaolefin in a molten state are particularly limited as long as the particle size of the crystalline polyalphaolefin mist is 50 μm or less. The melting temperature is about 50 to 200 ° C., the nozzle diameter is about 0.001 to 0.1 mm, and the spraying pressure is about 0.1 to 10 atm. .
In the above process, a crystalline polyalphaolefin is sprayed in a molten state to produce a sealing material, while mixing at least a raw material containing (2-B) epoxy resin and (2-C) inorganic filler. The method of spraying and adding the crystalline polyalphaolefin is preferred, and the method of spraying and adding the crystalline polyalphaolefin while mixing all the raw materials other than the crystalline polyalphaolefin is particularly preferred.

In the step of applying or spraying the crystalline polyalphaolefin in a molten state on the protective film, for example, the crystalline polyalphaolefin in a molten state is applied onto the protective film by a known method such as knife coater, bar coater or roll coating. It can apply | coat so that it may become a desired film thickness by spraying by well-known methods, such as a spray.

FIG. 1 is a schematic view showing an example of a semiconductor device (3DP, SiP) in which semiconductor elements are sealed with a resin by a batch sealing method. 1 is a molding material, 2 is a semiconductor element, 3 is a gold wire, 4 is a child substrate, and 5 is a semiconductor device. 3DP in this figure has a structure in which three semiconductors are stacked and electrically connected to a daughter board with a gold wire. The SiP is a semiconductor, an inverted semiconductor, and a semiconductor device mounted on a child substrate from the left. Since these 3DP and SiP have a very narrow gap between semiconductor components, when a molding material with high viscosity is injected, there is a high possibility that defects (gold wire deformation, unfilling, semiconductor movement, etc.) will occur during molding.

Hereinafter, the molding material of the present invention and the production method thereof will be specifically described with reference to Examples and Comparative Examples, but the present invention is not limited to these.

Production Example 1-1 (Production of (1,2′-dimethylsilylene) (2,1′-dimethylsilylene) -bis (3-trimethylsilylmethylindenyl) zirconium dichloride)
In a Schlenk bottle, 3.0 g (6.97 mmol) of a lithium salt of (1,2′-dimethylsilylene) (2,1′-dimethylsilylene) -bis (indene) was dissolved in 50 ml of THF (tetrahydrofuran). Cooled to ° C.
2.1 ml (14.2 mmol) of iodomethyltrimethylsilane was slowly added dropwise and stirred at room temperature for 12 hours.
The solvent was distilled off, 50 ml of ether was added, and the mixture was washed with a saturated ammonium chloride solution.
After liquid separation, the organic phase was dried to remove the solvent, and 3.04 g (5.88 mmol) of (1,2′-dimethylsilylene) (2,1′-dimethylsilylene) -bis (3-trimethylsilylmethylindene) was obtained. ) Was obtained (yield 84%).
Next, 3.04 g (5.88) of (1,2′-dimethylsilylene) (2,1′-dimethylsilylene) -bis (3-trimethylsilylmethylindene) obtained above in a Schlenk bottle under a nitrogen stream. Millimoles) and 50 milliliters of ether.
After cooling to −78 ° C., a hexane solution of n-BuLi (1.54 mol / L, 7.6 ml (11.7 mmol)) was added dropwise.
After stirring at room temperature for 12 hours, ether was distilled off.
The obtained solid was washed with 40 ml of hexane to obtain 3.06 g (5.07 mmol) of lithium salt as an ether adduct (yield 73%).
The results of measurement by ¹ H-NMR (90 MHz, THF-d ₈ ) are as follows: δ: 0.04 (s, 18H, trimethylsilyl); 0.48 (s, 12H, dimethylsilylene); 1.10 (t, 6H) , Methyl); 2.59 (s, 4H, methylene); 3.38 (q, 4H, methylene), 6.2-7.7 (m, 8H, Ar-H).

The lithium salt obtained under a nitrogen stream was dissolved in 50 ml of toluene.
After cooling to −78 ° C., a suspension of 1.2 g (5.1 mmol) of zirconium tetrachloride, which had been cooled to −78 ° C. in advance, in toluene (20 ml) was added dropwise.
After dropping, the mixture was stirred at room temperature for 6 hours. The solvent of the reaction solution was distilled off.
The obtained residue was recrystallized from dichloromethane to obtain 0.9 g (1 ') of (1,2'-dimethylsilylene) (2,1'-dimethylsilylene) -bis (3-trimethylsilylmethylindenyl) zirconium dichloride. .33 mmol) was obtained (yield 26%).
The results of measurement by ¹ H-NMR (90 MHz, CDCl ₃ ) are as follows: δ: 0.0 (s, 18H, trimethylsilyl); 1.02, 1.12 (s, 12H, dimethylsilylene); 2.51 (dd 4H, methylene); 7.1-7.6 (m, 8H, Ar-H).

Production Example 1-2 (Production of CPAO-70)
To a heat-dried 1 liter autoclave was added 400 ml of a mixture containing an α-olefin having 26 and 28 carbon atoms (C26: 56.9 wt%, C28: 39.4 wt%) and 0.5 mmol of triisobutylaluminum, The temperature was raised to 110 ° C. Then, 1.0 μmol of (1,2′-dimethylsilylene) (2,1′-dimethylsilylene) bis (3-trimethylsilylmethylindenyl) zirconium dichloride obtained in Production Example 1 was added to dimethylaniline while stirring. Nitroborate was added in an amount of 4.0 μmol, and 0.2 MPa of hydrogen was further introduced, followed by polymerization for 240 minutes. After completion of the polymerization reaction, the reaction product was precipitated by repeating the reprecipitation operation with acetone, followed by heat drying under reduced pressure to obtain 195.0 g of a higher α-olefin polymer (CPAO-70).

For CPAO-70, a differential scanning calorimeter (DSC-7) manufactured by PerkinElmer was used, and the sample was held at 190 ° C. for 5 minutes in a nitrogen atmosphere, and then decreased to −30 ° C. at 5 ° C./minute. The peak top observed from the melting endotherm curve obtained by maintaining the temperature at −30 ° C. for 5 minutes and then increasing the temperature to 190 ° C. at 10 ° C./min was measured, and the melting point was determined to be 70 ° C. It was. Further, the temperature at which the melting was started was 55 ° C., and the temperature at which the melting was completed was determined to be 71 ° C.

Production Example 1-3 (Production of CPAO-40)
To a heat-dried 1 liter autoclave, 400 ml of 1-octadecene (C18) and 0.5 mmol of triisobutylaluminum were added, and the temperature was raised to 110 ° C. Then, 1.0 μmol of (1,2′-dimethylsilylene) (2,1′-dimethylsilylene) bis (3-trimethylsilylmethylindenyl) zirconium dichloride obtained in Production Example 1 was added to dimethylaniline while stirring. 4.0 micromol of nium borate was added, and 0.2 MPa of hydrogen was further introduced, followed by polymerization for 240 minutes. After the completion of the polymerization reaction, the reaction product was precipitated by repeating the reprecipitation operation with acetone, followed by heat drying under reduced pressure to obtain 211.0 g of a higher α-olefin polymer (CPAO-40).
For CPAO-40, the melting point was determined in the same manner as in Production Example 1-2, and it was 42 ° C. The temperature at which melting was started was 30 ° C., and the temperature at which melting was completed was determined. As a result, it was 43 ° C.

Production Example 1-4 (Production of CPAO-28)
To a heat-dried 1 liter autoclave, 400 ml of 1-hexadecene (C16) and 0.5 mmol of triisobutylaluminum were added, and the temperature was raised to 110 ° C. Subsequently, 1.0 μmol of (1,2′-dimethylsilylene) (2,1′-dimethylsilylene) bis (3-trimethylsilylmethylindenyl) zirconium dichloride obtained in Production Example 1-1 was stirred, 4.0 micromol of dimethylanilinium borate was added, 0.2 MPa of hydrogen was further introduced, and polymerization was performed for 240 minutes. After completion of the polymerization reaction, the reprecipitation operation was repeated with acetone to precipitate the reaction product, followed by heating and drying under reduced pressure to obtain 205.0 g of a higher α-olefin polymer (CPAO-28).
Further, the melting point of CPAO-28 was determined in the same manner as in Production Example 1-2, and it was 28 ° C. The temperature at which melting was started was 15 ° C., and the temperature at which melting was finished was determined. As a result, it was 30 degreeC.

FIG. 2 shows the melting characteristics of the crystalline polyalphaolefin obtained in Production Example 1-3 and paraffin wax (manufactured by Nippon Seiki Co., Ltd .: Paraffin Wax 115). Compared with the melting characteristics of the crystalline polyalphaolefin (CPAO-40) having a melting point of 42 ° C. obtained in Production Example 3 and paraffin wax shown in FIG. 2, the melting temperature range of the crystalline polyalphaolefin is narrow. This is obvious. FIG. 3 is a graph showing melting characteristics of crystalline polyalphaolefins (28 ° C., 40 ° C., 70 ° C.) having different melting points. The characteristic that the melting temperature width is narrow is the same even if the melting point changes.

Example 1-1
85 mass% spherical silica powder (MSR-8030, manufactured by Tatsumori Co., Ltd., average particle size 12 μm), epoxy resin (NC-3000, manufactured by Nippon Kayaku Co., Ltd.) 8 based on the epoxy resin molding material for semiconductor encapsulation 4% by mass, epoxy resin curing agent (Kayahard GPH, manufactured by Nippon Kayaku Co., Ltd.), 0.5% by mass of epoxy resin curing accelerator (TPP-K, manufactured by Hokuko Chemical Co., Ltd.), modifier (KBM303) (Manufactured by Shin-Etsu Chemical Co., Ltd.) 0.3 mass% and mold release agent (Hoechst S, manufactured by Hoechst) 0.2 mass% were put into a Henschel type mixer, and CPAO-70 obtained in Production Example 1-2. 2% by mass (melting point: 70 ° C.) was stirred and mixed while being melt sprayed. The particle diameter of the sprayed CPAO-70 was 25 μm or less when CPAO-70 was sprayed on the transparent film and the particle diameter of the droplets on the film was measured. Next, the mixture was kneaded with an extruder (SK1, manufactured by Kurimoto Seiko Co., Ltd.), and then subjected to cooling, pulverization, and tableting to obtain an epoxy resin molding material for semiconductor encapsulation. Simulated semiconductor parts (chip size 10mm x 10mm, 176pinLQFP, outer dimensions 24mm x 24mm x 1.4mm) are sealed by transfer molding (mold temperature 165 ° C, curing time 3 minutes) with the material obtained, appearance and filling And the gold wire deformation was evaluated by the following method. The simulated semiconductor parts used for the appearance, fillability, and gold wire deformation evaluation were processed with pseudo circuit wiring to arrange the semiconductors on a single-sided copper foil substrate, and the semiconductor equivalent parts and external connection terminals were not mounted. The part is connected with a gold wire.

(appearance)
The appearance of the simulated semiconductor component sealed by molding was observed with a microscope and evaluated according to the following criteria.
A: There is no abnormality in appearance (breaking, chipping, dent, foreign matter, etc.) of 10 μm or more.
○: Appearance abnormality of 10-30 μm is 2 or less / molded product, and there is no appearance abnormality of 30 μm or more.
Δ: Appearance abnormality of 10 to 30 μm is 5 or less / molded product, and there is no appearance abnormality of 30 μm or more.
×: Appearance abnormality of 10 to 30 μm is 6 or more / molded product, or appearance abnormality of 30 μm or more.
(Fillability)
The simulated semiconductor component sealed by molding was polished by 0.1 mm, the surface was observed with a microscope, and evaluated according to the same criteria as the appearance.
A: There is no abnormality in appearance (breaking, chipping, dent, foreign matter, etc.) of 10 μm or more.
○: Appearance abnormality of 10-30 μm is 2 or less / molded product, and there is no appearance abnormality of 30 μm or more.
Δ: Appearance abnormality of 10 to 30 μm is 5 or less / molded product, and there is no appearance abnormality of 30 μm or more.
×: Appearance abnormality of 10 to 30 μm is 6 or more / molded product, or appearance abnormality of 30 μm or more.
(Gold wire deformation)
The simulated semiconductor component sealed by molding was observed with a soft X-ray apparatus and evaluated according to the following criteria.
None: Gold wire deformation rate (gold wire flow width / gold wire length, expressed in%) <2%
Small: Gold wire deformation rate <5%
Large: Gold wire deformation rate ≧ 5%

Example 1-2
Semiconductor encapsulation in the same manner as in Example 1-1 except that CPAO-40 (melting point: 42 ° C.) obtained in Production Example 1-3 was used instead of CPAO-70 obtained in Production Example 1-2. Epoxy resin molding materials were manufactured and evaluated for appearance, fillability and gold wire deformation.

Example 1-3
The epoxy for semiconductor encapsulation was changed in the same manner as in Example 1-1 except that the blending amount in Example 1-1 was changed to 81% by mass of spherical silica powder, 11% by mass of epoxy resin, and 5% by mass of epoxy resin curing agent. Resin molding materials were manufactured and evaluated for appearance, fillability and gold wire deformation.

Example 1-4
CPAO-70 was not pulverized with CPAO-70, but CPAO-70 was pulverized with a cutter mill, and passed through a circular sieve (aperture 50 μm) to obtain a finely pulverized product, which was charged into the mixer simultaneously with other components. Except for the above, an epoxy resin molding material for semiconductor encapsulation was produced in the same manner as in Example 1-1, and the appearance, fillability, and gold wire deformation were evaluated.

Comparative Example 1-1
The amount of spherical silica powder was changed to 87% by mass without using crystalline polyalphaolefin, and the others were produced in the same manner as in Example 1-1, and the appearance, fillability, and gold wire deformation were determined. evaluated. The obtained molding material had a high melt viscosity, and the workability during materialization and the fluidity during molding were very poor.

Comparative Example 1-2
A molding material is produced in the same manner as in Example 1-1 except that CPAO-28 (melting point: 28 ° C.) obtained in Production Example 1-4 is used instead of CPAO-70 obtained in Production Example 1-2. The appearance, fillability, and gold wire deformation were evaluated.

Comparative Example 1-3
A molding material was produced in the same manner as in Example 1-4 except that coarse particles were used in place of the finely pulverized product of CPAO-70, and the appearance, fillability and gold wire deformation were evaluated. As coarse particles, CPAO-70 was pulverized in the same manner as in Example 1-4, and the one remaining on the sieve screen of a circular sieve (aperture 75 μm) was used.

Comparative Example 1-4
A molding material was produced in the same manner as in Example 1-1 except that the amount of CPAO-70 added was increased to 6% by mass. The cured product of the obtained molding material was insufficient in strength locally, and a normal molded product could not be obtained. Therefore, the appearance, fillability and gold wire deformation could not be evaluated.

Comparative Example 1-5
In Example 1-1, materialization was performed in the same manner as in Example 1-1 except that paraffin wax (Nippon Seiki Co., Ltd., paraffin wax 115) was used instead of CPAO-70. Since the obtained molding material was extremely sticky and a molded product having a normal shape could not be obtained, the appearance, fillability and gold wire deformation could not be evaluated.

Table 1 shows the contents and results of Examples 1-1 to 1-4 and Comparative Examples 1-1 to 1-5. When the appearance, filling property and gold wire deformation of the molding materials obtained in Examples 1-1 to 1-4 and Comparative Examples 1-1 to 1-5 were compared, the evaluation results of Examples 1-1 to 1-5 It is understood that is excellent. In addition, the molding materials of Comparative Examples 1-2 and 1-3 had large variations in appearance, fillability, and gold wire deformation evaluation.

Production Example 2-1 (Production of (1,2′-dimethylsilylene) (2,1′-dimethylsilylene) -bis (3-trimethylsilylmethylindenyl) zirconium dichloride)
In a Schlenk bottle, 3.0 g (6.97 mmol) of a lithium salt of (1,2′-dimethylsilylene) (2,1′-dimethylsilylene) -bis (indene) was dissolved in 50 ml of THF (tetrahydrofuran). Cooled to ° C.
2.1 ml (14.2 mmol) of iodomethyltrimethylsilane was slowly added dropwise and stirred at room temperature for 12 hours.
The solvent was distilled off, 50 ml of ether was added, and the mixture was washed with a saturated ammonium chloride solution.
After liquid separation, the organic phase was dried to remove the solvent, and 3.04 g (5.88 mmol) of (1,2′-dimethylsilylene) (2,1′-dimethylsilylene) -bis (3-trimethylsilylmethylindene) was obtained. ) Was obtained (yield 84%).
Next, 3.04 g (5.88) of (1,2′-dimethylsilylene) (2,1′-dimethylsilylene) -bis (3-trimethylsilylmethylindene) obtained above in a Schlenk bottle under a nitrogen stream. Millimoles) and 50 milliliters of ether.
After cooling to −78 ° C., a hexane solution of n-BuLi (1.54 mol / L, 7.6 ml (11.7 mmol)) was added dropwise.
After stirring at room temperature for 12 hours, ether was distilled off.
The obtained solid was washed with 40 ml of hexane to obtain 3.06 g (5.07 mmol) of lithium salt as an ether adduct (yield 73%).
The results of measurement by ¹ H-NMR (90 MHz, THF-d ₈ ) are as follows: δ: 0.04 (s, 18H, trimethylsilyl); 0.48 (s, 12H, dimethylsilylene); 1.10 (t, 6H) , Methyl); 2.59 (s, 4H, methylene); 3.38 (q, 4H, methylene), 6.2-7.7 (m, 8H, Ar-H).

The lithium salt obtained under a nitrogen stream was dissolved in 50 ml of toluene.
After cooling to −78 ° C., a suspension of 1.2 g (5.1 mmol) of zirconium tetrachloride, which had been cooled to −78 ° C. in advance, in toluene (20 ml) was added dropwise.
After dropping, the mixture was stirred at room temperature for 6 hours. The solvent of the reaction solution was distilled off.
The obtained residue was recrystallized from dichloromethane to obtain 0.9 g (1 ') of (1,2'-dimethylsilylene) (2,1'-dimethylsilylene) -bis (3-trimethylsilylmethylindenyl) zirconium dichloride. .33 mmol) was obtained (yield 26%).
The results of measurement by ¹ H-NMR (90 MHz, CDCl ₃ ) are as follows: δ: 0.0 (s, 18H, trimethylsilyl); 1.02, 1.12 (s, 12H, dimethylsilylene); 2.51 (dd 4H, methylene); 7.1-7.6 (m, 8H, Ar-H).

Production Example 2-2 (Production of CPAO-70)
400 mL of alpha olefin C26-28 manufactured by Chevron Phillips Chemical Co. and 0.5 mmol of triisobutylaluminum were added to a heat-dried 1 liter autoclave, and the temperature was raised to 110 ° C. Then, 1.0 μmol of (1,2′-dimethylsilylene) (2,1′-dimethylsilylene) bis (3-trimethylsilylmethylindenyl) zirconium dichloride obtained in Production Example 1 was added to dimethylaniline while stirring. Nitroborate was added in an amount of 4.0 μmol, and 0.2 MPa of hydrogen was further introduced, followed by polymerization for 240 minutes. After completion of the polymerization reaction, the reaction product was precipitated by repeating the reprecipitation operation with acetone, followed by heat drying under reduced pressure to obtain 195 g of a higher α-olefin polymer (CPAO-70).

For CPAO-70, a differential scanning calorimeter (DSC-7) manufactured by PerkinElmer was used, and the sample was held at 190 ° C. for 5 minutes in a nitrogen atmosphere, and then decreased to −30 ° C. at 5 ° C./minute. The peak top observed from the melting endotherm curve obtained by maintaining the temperature at −30 ° C. for 5 minutes and then increasing the temperature to 190 ° C. at 10 ° C./min was measured, and the melting point was determined to be 70 ° C. It was. Moreover, the temperature which starts melting | dissolving is 55 degreeC, It was 71 degreeC when the temperature which complete | finishes melting | dissolving was calculated | required.

Production Example 2-3 (Production of CPAO-60)
400 mL of alpha olefin C20-24 manufactured by Chevron Phillips Chemical Co., and 0.5 mmol of triisobutylaluminum were added to a 1 liter autoclave that had been dried by heating, and the temperature was raised to 110 ° C. Then, 1.0 μmol of (1,2′-dimethylsilylene) (2,1′-dimethylsilylene) bis (3-trimethylsilylmethylindenyl) zirconium dichloride obtained in Production Example 1 was added to dimethylaniline while stirring. Nitroborate was added in an amount of 4.0 μmol, and 0.2 MPa of hydrogen was further introduced, followed by polymerization for 240 minutes. After the completion of the polymerization reaction, the reaction product was precipitated by repeating the reprecipitation operation with acetone, and heat dried under reduced pressure to obtain 203 g of a higher α-olefin polymer (CPAO-60).
For CPAO-60, the melting point was determined in the same manner as in Production Example 2-2, and it was 60 ° C. The temperature at which melting was started was 45 ° C., and the temperature at which melting was completed was determined. As a result, it was 61 ° C.

Production Example 2-4 (Production of CPAO-50)
Idemitsu Kosan Co., Ltd. “Linearene 2024” 40
0 ml and 0.5 mmol of triisobutylaluminum were added, and the temperature was raised to 110 ° C. Subsequently, 1.0 μmol of (1,2′-dimethylsilylene) (2,1′-dimethylsilylene) bis (3-trimethylsilylmethylindenyl) zirconium dichloride obtained in Production Example 2-1 was stirred, while stirring. 4.0 micromol of dimethylanilinium borate was added, 0.2 MPa of hydrogen was further introduced, and polymerization was performed for 240 minutes.
After completion of the polymerization reaction, the reprecipitation operation was repeated with acetone to precipitate the reaction product, followed by heating and drying under reduced pressure to obtain 210 g of a higher α-olefin polymer (CPAO-50).
For CPAO-50, the melting point was determined in the same manner as in Production Example 2-2, and it was 52 ° C. The temperature at which melting was started was 37 ° C., and the temperature at which melting was completed was determined. As a result, it was 53 ° C.

Production Example 2-5 (Production of CPAO-40)
To a heat-dried 1 liter autoclave, 400 ml of 1-octadecene (C18) and 0.5 mmol of triisobutylaluminum were added, and the temperature was raised to 110 ° C. Subsequently, 1.0 μmol of (1,2′-dimethylsilylene) (2,1′-dimethylsilylene) bis (3-trimethylsilylmethylindenyl) zirconium dichloride obtained in Production Example 2-1 was stirred, while stirring. 4.0 micromol of dimethylanilinium borate was added, 0.2 MPa of hydrogen was further introduced, and polymerization was performed for 240 minutes. After completion of the polymerization reaction, the reaction product was precipitated by repeating the reprecipitation operation with acetone, and heat dried under reduced pressure to obtain 211 g of a higher α-olefin polymer (CPAO-40).
For CPAO-40, the melting point was determined in the same manner as in Production Example 2-2, and it was 42 ° C. The temperature at which melting was started was 30 ° C., and the temperature at which melting was completed was determined. As a result, it was 45 degreeC.

Production Example 2-6 (Production of CPAO-28)
To a heat-dried 1 liter autoclave, 400 ml of 1-hexadecene (C16) and 0.5 mmol of triisobutylaluminum were added, and the temperature was raised to 110 ° C. Subsequently, 1.0 μmol of (1,2′-dimethylsilylene) (2,1′-dimethylsilylene) bis (3-trimethylsilylmethylindenyl) zirconium dichloride obtained in Production Example 2-1 was stirred, while stirring. 4.0 micromol of dimethylanilinium borate was added, and 0.2 MPa of hydrogen was further introduced, followed by polymerization for 240 minutes. After completion of the polymerization reaction, the reaction product was precipitated by repeating the reprecipitation operation with acetone, and heat dried under reduced pressure to obtain 205 g of a higher α-olefin polymer (CPAO-28).
For CPAO-28, the melting point was determined in the same manner as in Production Example 2-2, and it was 28 ° C. The temperature at which melting was started was 15 ° C., and the temperature at which melting was completed was determined. As a result, it was 30 degreeC.

FIG. 2 shows the melting characteristics of the crystalline polyalphaolefin obtained in Production Example 2-5 and paraffin wax (manufactured by Nippon Seiki Co., Ltd .: Paraffin Wax 115). Compared with the melting characteristics of crystalline polyalphaolefin (CPAO-40) having a melting point of 42 ° C. obtained in Production Example 2-5 and paraffin wax shown in FIG. It is obvious that is narrow. FIG. 3 is a graph showing melting characteristics of crystalline polyalphaolefins (28 ° C., 40 ° C., 70 ° C.) having different melting points. The characteristic that the melting temperature width is narrow is the same even if the melting point changes.

Example 2-1
85.5% by mass of spherical silica powder (FB9454FD, particle size ≦ 45 μm, manufactured by Denki Kagaku Kogyo Co., Ltd.), 7% by mass of epoxy resin (YX4000H, manufactured by Japan Epoxy Resin Co., Ltd.), cured epoxy resin 5% by mass of an agent (MEH7800, manufactured by Meiwa Kasei Co., Ltd.), 0.2% by mass of an epoxy resin curing accelerator (TPP, manufactured by KAI Kasei Co., Ltd.) and 0.3% by mass of a modifier (S530, manufactured by Chisso Corporation) Was added to a Henschel type mixer, and 2 mass% of CPAO-50 (melting point: 52 ° C.) obtained in Production Example 2-4 was stirred and mixed while melt spraying while adjusting the particle size to 15 ± 5 μm. Thus, a sealing material was obtained. The particle diameter of CPAO-50 was 25 μm or less when CPAO-50 was sprayed on a transparent film and the particle diameter of droplets on the film was measured. Next, the mixture was kneaded with an extruder (SK1, manufactured by Kurimoto Seiko Co., Ltd.), and then a protective film (PET, 75 μm thickness, Toray Industries, Inc.) melt-coated with CPAO-40 obtained in Production Example 2-5 was used. The epoxy resin sheet member for semiconductor encapsulation was obtained by sandwiching the product into a product made by company. The thickness of CPAO-40 at the time of melt coating was adjusted to 6 ± 3 μm. After removing the protective film on one side of this member, a simulated semiconductor substrate (chip size: 10 mm × 10 mm, 176 pin LQFP, outer dimensions: 24 mm × 24 mm × 1.4 mm) is sealed by pressure molding (mold temperature 150 ° C., curing time 3 minutes). The following methods were used for evaluation of stoppage, peelability, fillability, gold wire deformation, and appearance. The simulated semiconductor parts used for peelability, fillability, gold wire deformation, and appearance evaluation were processed with pseudo circuit wiring that aligned semiconductors on a single-sided copper foil substrate. The connection terminal portion is connected with a gold wire.

(Peelability)
The film was peeled off from the epoxy resin sheet member, the sealing material adhering to the film was visually confirmed, and evaluated according to the following criteria.
A: Adhesion of sealing material is not recognized.
○: Adhesion of the sealing material was 1% or less (area) of the whole, and the sealing material retained the original sheet.
Δ: Less than 5% of the sealing material adhered, and the sealing material retained the original sheet.
X: Adhesion of sealing material is 5% or more of the whole, or the sealing material does not hold the original pattern.
(appearance)
The appearance of the simulated semiconductor component sealed by molding was observed with a microscope and evaluated according to the following criteria.
A: There is no abnormality in appearance (breaking, chipping, dent, foreign matter, etc.) of 10 μm or more.
○: Appearance abnormality of 10-30 μm is 2 or less / molded product, and there is no appearance abnormality of 30 μm or more.
Δ: Appearance abnormality of 10 to 30 μm is 5 or less / molded product, and there is no appearance abnormality of 30 μm or more.
×: Appearance abnormality of 10 to 30 μm is 6 or more / molded product, or appearance abnormality of 30 μm or more.
(Fillability)
The simulated semiconductor component sealed by molding was polished by 0.1 mm, the surface was observed with a microscope, and evaluated according to the same criteria as the appearance.
A: There is no abnormality in appearance (breaking, chipping, dent, foreign matter, etc.) of 10 μm or more.
○: Appearance abnormality of 10-30 μm is 2 or less / molded product, and there is no appearance abnormality of 30 μm or more.
Δ: Appearance abnormality of 10 to 30 μm is 5 or less / molded product, and there is no appearance abnormality of 30 μm or more.
×: Appearance abnormality of 10 to 30 μm is 6 or more / molded product, or appearance abnormality of 30 μm or more.
(Gold wire deformation)
The simulated semiconductor component sealed by molding was observed with a soft X-ray apparatus and evaluated according to the following criteria.
None: Gold wire deformation rate (gold wire flow width / gold wire length, expressed in%) <2%
Small: Gold wire deformation rate <5%
Large: Gold wire deformation rate ≧ 5%

Example 2-2
Instead of CPAO-50 obtained in Production Example 2-4, CPAO-70 obtained in Production Example 2-2 (melting point 70 ° C.) was melted and sprayed in the same manner as in Example 2-1, but the semiconductor encapsulation was performed. A stop epoxy resin sheet member was produced and evaluated for peelability, fillability, gold wire deformation, and appearance.

Example 2-3
Instead of CPAO-40 obtained in Production Example 2-5, CPAO-60 (melting point 60 ° C.) obtained in Production Example 2-3 was melt-coated on a protective film in the same manner as in Example 2-1. Then, an epoxy resin sheet member for semiconductor encapsulation was manufactured and evaluated for peelability, fillability, gold wire deformation, and appearance.

Example 2-4
Epoxy resin for semiconductor encapsulation in the same manner as in Example 2-1, except that CPAO-40 obtained in Production Example 2-5 was melted and sprayed onto a protective film to form a coating film having a thickness of 12 ± 4 μm. Sheet members were manufactured and evaluated for peelability, fillability, gold wire deformation, and appearance.

Comparative Example 2-1
In Example 2-1, a sheet member was produced without using crystalline polyalphaolefin and the blending amount of the spherical silica powder was 87.5% by mass, and the peelability, fillability, gold wire deformation, and appearance were evaluated. . The peelability of the obtained member was very poor, and a part of the sealing material adhered to the protective film. Further, the melt viscosity of the sealing material was high, the injection property was very poor, and a normal molded product could not be obtained.

Comparative Example 2-2
A sheet member was produced in the same manner as in Example 2-1, except that CPAO-28 (melting point 28 ° C.) obtained in Production Example 2-6 was used instead of CPAO-50 obtained in Production Example 2-4. Then, the peelability, fillability, gold wire deformation, and appearance were evaluated.

Comparative Example 2-3
In Example 2-2, instead of the method of melt spraying CPAO-70 obtained in Production Example 2-2, coarse particles of CPAO-70 (particle size of 50 μm or more) were used. Example 2-2 In the same manner as above, sheet members were produced and evaluated for peelability, fillability, gold wire deformation, and appearance. As the coarse particles of CPAO-70, CPAO-70 was finely pulverized and sieved using a sieve mesh having an opening of 50 μm, and the particles remaining on the sieve mesh were used.

Comparative Example 2-4
A sheet member was prepared in the same manner as in Example 2-1, except that the amount of CPAO-50 obtained in Production Example 2-4 was increased to 6% by mass and the amount of spherical silica powder was decreased to 81.5% by mass. Manufactured and evaluated for peelability, fillability, gold wire deformation, and appearance. Although the film peelability of this material was good, variation in the molded product was very large, and a correct evaluation result could not be obtained.

The contents and evaluation results of Examples 2-1 to 2-4 and Comparative Examples 2-1 to 2-4 are shown in Table 2. When the peelability, fillability, gold wire deformation, and appearance of the sheet members obtained in Examples 2-1 to 2-4 and Comparative Examples 2-1 to 2-4 were compared, the semiconductor encapsulation of Examples 1 to 4 was compared. It can be seen that the epoxy resin sheet member for use is excellent. Further, the sealing materials of Comparative Example 2-2 and Comparative Example 2-3 had large variations in peelability, fillability, gold wire deformation, and appearance evaluation.

The epoxy resin molding material for semiconductor encapsulation of the present invention is excellent in moldability when used as a transfer molding material for semiconductor encapsulation, and particularly exhibits excellent performance in the collective sealing method. It is a molding material that enables resin sealing of cutting-edge semiconductor devices that were difficult to put into practical use due to various problems during molding. Industrially producing cutting-edge semiconductor devices using existing equipment Enable.
Moreover, the epoxy resin sheet member for semiconductor encapsulation of the present invention is excellent in moldability when used as a pressure-molding sheet member for semiconductor encapsulation, and particularly exhibits excellent performance in the collective sealing method. It is a sheet member that enables resin sealing of cutting-edge semiconductor devices that were difficult to put into practical use due to various problems during molding. Industrially producing cutting-edge semiconductor devices using existing equipment Enable.

Claims (9)

1. At least (1-A) crystalline polyalphaolefin having a melting point of 30 to 90 ° C. and / or mist with a particle size of 75 μm or less, (1-B) epoxy resin, and (1-C) inorganic filler An epoxy resin molding material for semiconductor encapsulation, which is obtained by melt-kneading and containing 0.2 to 5% by mass of the crystalline polyalphaolefin.
2. 2. The epoxy resin molding material for semiconductor encapsulation according to claim 1, wherein the crystalline polyalphaolefin starts melting within −15 ° C. of the melting point and ends melting within + 3 ° C.
3. 2. The epoxy resin molding material for semiconductor encapsulation according to claim 1, wherein the (1-C) inorganic filler is silica powder.
4. 2. The epoxy resin molding material for semiconductor encapsulation according to claim 1, comprising 80% by mass or more of the (1-C) inorganic filler.
5. 2. The method for producing an epoxy resin molding material for semiconductor encapsulation according to claim 1, wherein the crystalline polyalphaolefin having a melting point of 30 to 90 ° C. is added by spraying in a molten state.
6. At least (2-A) crystalline polyalphaolefin having a melting point of 30 to 90 ° C. and / or mist with a particle size of 50 μm or less, (2-B) epoxy resin, and (2-C) inorganic filler An epoxy resin sheet member for semiconductor encapsulation having a sealing layer made of a sealing material containing 0.2 to 5% by mass of the crystalline polyalphaolefin, An epoxy resin sheet member for semiconductor encapsulation having a protective film on one or both sides of the sealing layer.
7. 7. The epoxy resin sheet member for semiconductor encapsulation according to claim 6, wherein the crystalline polyalphaolefin starts melting within −15 ° C. of the melting point and ends melting within + 3 ° C.
8. 7. The epoxy resin sheet member for semiconductor encapsulation according to claim 6, further comprising a release layer having a thickness of 0.1 to 10 μm containing crystalline polyalphaolefin having a melting point of 30 to 90 ° C. on the sealing layer side of the protective film. .
9. A process for producing a sealing material by spraying a crystalline polyalphaolefin having a melting point of 30 to 90 ° C. in a molten state, and applying or spraying a crystalline polyalphaolefin having a melting point of 30 to 90 ° C. to the protective film in a molten state And a step of forming a release layer. The method for producing an epoxy resin sheet member for semiconductor encapsulation according to claim 6.

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