WO2007126559A3 - Apparatus and method for detecting overlay errors using scatterometry - Google Patents

Apparatus and method for detecting overlay errors using scatterometry Download PDF

Info

Publication number
WO2007126559A3
WO2007126559A3 PCT/US2007/006031 US2007006031W WO2007126559A3 WO 2007126559 A3 WO2007126559 A3 WO 2007126559A3 US 2007006031 W US2007006031 W US 2007006031W WO 2007126559 A3 WO2007126559 A3 WO 2007126559A3
Authority
WO
WIPO (PCT)
Prior art keywords
target
periodic
scatterometry
cells
features
Prior art date
Application number
PCT/US2007/006031
Other languages
French (fr)
Other versions
WO2007126559A2 (en
Inventor
Daniel Kandel
Walter D Mieher
Boris Golovanevsky
Original Assignee
Kla Tencor Tech Corp
Daniel Kandel
Walter D Mieher
Boris Golovanevsky
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Tech Corp, Daniel Kandel, Walter D Mieher, Boris Golovanevsky filed Critical Kla Tencor Tech Corp
Priority to JP2009502820A priority Critical patent/JP5616627B2/en
Publication of WO2007126559A2 publication Critical patent/WO2007126559A2/en
Publication of WO2007126559A3 publication Critical patent/WO2007126559A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

Embodiments of the invention include a scatterometry target for use in determining the alignment between substrate layers. A target arrangement is formed on a substrate and comprises a plurality of target cells. Each cell has two layers of periodic features constructed such that an upper layer is arranged above a lower layer and configured so that the periodic features of the upper layer have an offset and/or different pitch than periodic features of the lower layer. The pitches are arranged to generate a periodic signal when the target is exposed to an illumination source. The target also includes disambiguation features arranged between the cells and configured to resolve ambiguities caused by the periodic signals generated by the cells when exposed to the illumination source.
PCT/US2007/006031 2006-03-31 2007-03-08 Apparatus and method for detecting overlay errors using scatterometry WO2007126559A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009502820A JP5616627B2 (en) 2006-03-31 2007-03-08 Method for determining overlay error between target and sample layers

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US78800506P 2006-03-31 2006-03-31
US60/788,005 2006-03-31
US11/525,320 2006-09-21
US11/525,320 US7616313B2 (en) 2006-03-31 2006-09-21 Apparatus and methods for detecting overlay errors using scatterometry

Publications (2)

Publication Number Publication Date
WO2007126559A2 WO2007126559A2 (en) 2007-11-08
WO2007126559A3 true WO2007126559A3 (en) 2007-12-21

Family

ID=38558396

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/006031 WO2007126559A2 (en) 2006-03-31 2007-03-08 Apparatus and method for detecting overlay errors using scatterometry

Country Status (3)

Country Link
US (1) US7616313B2 (en)
JP (2) JP5616627B2 (en)
WO (1) WO2007126559A2 (en)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4839127B2 (en) * 2006-05-10 2011-12-21 株式会社日立ハイテクノロジーズ Standard member for calibration, calibration method and electron beam apparatus using the same
US7911612B2 (en) * 2007-06-13 2011-03-22 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7808638B2 (en) * 2007-07-13 2010-10-05 Kla-Tencor Corporation Scatterometry target and method
US8004679B2 (en) * 2008-05-09 2011-08-23 Kla-Tencor Corporation Target design and methods for scatterometry overlay determination
TWI364784B (en) * 2008-06-13 2012-05-21 Ind Tech Res Inst Method for designing overlay targets and method and system for measuring overlay error using the same
US8441639B2 (en) * 2009-09-03 2013-05-14 Kla-Tencor Corp. Metrology systems and methods
US9927718B2 (en) 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US9007584B2 (en) * 2010-12-27 2015-04-14 Nanometrics Incorporated Simultaneous measurement of multiple overlay errors using diffraction based overlay
TWI539250B (en) * 2011-03-15 2016-06-21 Orc Mfg Co Ltd A registration device and an exposure device having a registration device
US10890436B2 (en) 2011-07-19 2021-01-12 Kla Corporation Overlay targets with orthogonal underlayer dummyfill
CN103748515A (en) * 2011-08-23 2014-04-23 Asml荷兰有限公司 Metrology method and apparatus, and device manufacturing method
US10107621B2 (en) * 2012-02-15 2018-10-23 Nanometrics Incorporated Image based overlay measurement with finite gratings
KR101759608B1 (en) 2012-05-29 2017-07-20 에이에스엠엘 네델란즈 비.브이. Metrology method and apparatus, substrate, lithographic system and device manufacturing method
WO2014004555A1 (en) 2012-06-26 2014-01-03 Kla-Tencor Corporation Near field metrology
CN104471484B (en) * 2012-07-05 2018-02-06 Asml荷兰有限公司 Measurement for photolithography
WO2014074873A1 (en) 2012-11-09 2014-05-15 Kla-Tencor Corporation Reducing algorithmic inaccuracy in scatterometry overlay metrology
WO2014194095A1 (en) 2013-05-30 2014-12-04 Kla-Tencor Corporation Combined imaging and scatterometry metrology
US9885962B2 (en) 2013-10-28 2018-02-06 Kla-Tencor Corporation Methods and apparatus for measuring semiconductor device overlay using X-ray metrology
JP2015095631A (en) * 2013-11-14 2015-05-18 マイクロン テクノロジー， インク． Semiconductor device
CN106030414B (en) 2014-02-21 2018-10-09 Asml荷兰有限公司 The optimization of target arrangement and relevant target
WO2015157464A1 (en) * 2014-04-09 2015-10-15 Kla-Tencor Corporation Estimating and eliminating inter-cell process variation inaccuracy
US10415963B2 (en) 2014-04-09 2019-09-17 Kla-Tencor Corporation Estimating and eliminating inter-cell process variation inaccuracy
US10352876B2 (en) 2014-05-09 2019-07-16 KLA—Tencor Corporation Signal response metrology for scatterometry based overlay measurements
WO2016030255A2 (en) 2014-08-29 2016-03-03 Asml Netherlands B.V. Metrology method, target and substrate
SG11201704036UA (en) 2014-11-26 2017-06-29 Asml Netherlands Bv Metrology method, computer product and system
KR20160066448A (en) 2014-12-02 2016-06-10 삼성전자주식회사 Method for inspecting surface
KR20160121206A (en) 2015-04-10 2016-10-19 삼성전자주식회사 Method for detecting an overlay error and method for manufacturing semiconductor using the same
WO2016176502A1 (en) 2015-04-28 2016-11-03 Kla-Tencor Corporation Computationally efficient x-ray based overlay measurement
WO2017178220A1 (en) 2016-04-11 2017-10-19 Asml Netherlands B.V. Metrology target, method and apparatus, target design method, computer program and lithographic system
US10527952B2 (en) 2016-10-25 2020-01-07 Kla-Tencor Corporation Fault discrimination and calibration of scatterometry overlay targets
WO2018081147A1 (en) * 2016-10-25 2018-05-03 Kla-Tencor Corporation Fault discrimination and calibration of scatterometry overlay targets
WO2018147938A1 (en) * 2017-02-10 2018-08-16 Kla-Tencor Corporation Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements
US10204867B1 (en) * 2017-08-31 2019-02-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor metrology target and manufacturing method thereof
US10990022B2 (en) * 2018-12-20 2021-04-27 Kla Corporation Field-to-field corrections using overlay targets
US11874102B2 (en) 2019-12-30 2024-01-16 Kla Corporation Thick photo resist layer metrology target
CN115428139B (en) * 2020-04-15 2024-04-12 科磊股份有限公司 Offset targets with device level features useful for measuring semiconductor device offset
US20230176491A1 (en) * 2020-05-07 2023-06-08 Asml Netherlands B.V. A substrate comprising a target arrangement, and associated at least one patterning device, lithographic method and metrology method
US12044982B2 (en) * 2021-12-02 2024-07-23 Micron Technology, Inc. Apparatuses and methods for diffraction base overlay measurements

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050195398A1 (en) * 2002-12-05 2005-09-08 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923041A (en) * 1995-02-03 1999-07-13 Us Commerce Overlay target and measurement procedure to enable self-correction for wafer-induced tool-induced shift by imaging sensor means
WO2001084382A1 (en) 2000-05-04 2001-11-08 Kla-Tencor, Inc. Methods and systems for lithography process control
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
WO2002065545A2 (en) * 2001-02-12 2002-08-22 Sensys Instruments Corporation Overlay alignment metrology using diffraction gratings
US20030002043A1 (en) 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
DE10142317B4 (en) * 2001-08-30 2010-07-01 Advanced Micro Devices, Inc., Sunnyvale Device for determining an overlay error and critical dimensions in a semiconductor structure by means of scatter measurement
US6982793B1 (en) * 2002-04-04 2006-01-03 Nanometrics Incorporated Method and apparatus for using an alignment target with designed in offset
US7170604B2 (en) * 2002-07-03 2007-01-30 Tokyo Electron Limited Overlay metrology method and apparatus using more than one grating per measurement direction
SG125923A1 (en) * 2002-09-20 2006-10-30 Asml Netherlands Bv Lithographic marker structure, lithographic projection apparatus comprising such a lithographic marker structure and method for substrate alignment using such a lithographic marker structure
JP4746987B2 (en) * 2002-12-05 2011-08-10 ケーエルエー−テンカー コーポレイション Apparatus and method for detecting overlay error using scatterometry
US7230704B2 (en) * 2003-06-06 2007-06-12 Tokyo Electron Limited Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay
US7230703B2 (en) * 2003-07-17 2007-06-12 Tokyo Electron Limited Apparatus and method for measuring overlay by diffraction gratings
JP4734261B2 (en) * 2004-02-18 2011-07-27 ケーエルエー−テンカー コーポレイション Continuously changing offset mark and overlay determination method
US20060012779A1 (en) * 2004-07-13 2006-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379184B2 (en) * 2004-10-18 2008-05-27 Nanometrics Incorporated Overlay measurement target

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050195398A1 (en) * 2002-12-05 2005-09-08 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay

Also Published As

Publication number Publication date
US7616313B2 (en) 2009-11-10
JP5616627B2 (en) 2014-10-29
JP2014030047A (en) 2014-02-13
WO2007126559A2 (en) 2007-11-08
JP2009532862A (en) 2009-09-10
US20070229829A1 (en) 2007-10-04

Similar Documents

Publication Publication Date Title
WO2007126559A3 (en) Apparatus and method for detecting overlay errors using scatterometry
ATE504862T1 (en) METHOD FOR DETECTING SUPERMEDIATION ERRORS USING SCATTEROMETRY
TW200741173A (en) Method and apparatus for measuring dimensional changes in transparent substrates
WO2007008473A3 (en) Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
NZ596559A (en) Dry coating thickness measurement and instrument
AU2003300005A1 (en) Differential critical dimension and overlay metrology apparatus and measurement method
SG157350A1 (en) Lithographic apparatus and device manufacturing method
IL234539B (en) Metrology method and apparatus, lithographic system and device manufacturing method
TW200732858A (en) Method and device for determining processing conditions, display and displaying method, processor, measuring instrument and aligner, substrate processing system, and program and information recording medium
JP2009532862A5 (en)
ATE548688T1 (en) TOUCH SCREEN PANEL AND METHOD FOR PRODUCING THEREOF
WO2005081069A8 (en) Method to determine the value of process parameters based on scatterometry data
EP2458441A3 (en) Measuring method, apparatus and substrate
SG139628A1 (en) Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
JP2013187206A5 (en)
ATE554387T1 (en) BIOSENSOR WITH INTERDIGITAL ELECTRODE SENSOR UNITS
WO2008063314A3 (en) Device and method for measuring gap between members of a structure for manufacture of a shim
WO2008114471A1 (en) Film thickness measuring method, its apparatus, and manufacturing system for thin-film device
CN101697001A (en) Method for detecting positional deviation among layers of multilayer printed circuit board
WO2008106015A3 (en) A method for quantifying defects in a transparent substrate
SG158187A1 (en) Lithographic apparatus with multiple alignment arrangements and alignment measurement method
WO2008157619A3 (en) Total internal reflection displacement scale
WO2005079304A3 (en) Method and system to measure characteristics of a film disposed on a substrate
JP2015520377A5 (en)
JP2011040434A5 (en) Surface inspection apparatus and surface inspection method

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07752713

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2009502820

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07752713

Country of ref document: EP

Kind code of ref document: A2