US5759748A - Method for forming photoresist pattern - Google Patents

Method for forming photoresist pattern Download PDF

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Publication number
US5759748A
US5759748A US08/816,479 US81647997A US5759748A US 5759748 A US5759748 A US 5759748A US 81647997 A US81647997 A US 81647997A US 5759748 A US5759748 A US 5759748A
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Prior art keywords
silicon
photoresist film
silicon monomer
layer
exposing
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Expired - Lifetime
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US08/816,479
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Jun Sung Chun
Yong Suk Lee
Ki Ho Baik
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SK Hynix Inc
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Hyundai Electronics Industries Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates, in general, to a method for forming photoresist patterns and, more particularly, to a simple diffusion enhanced silylated resist (hereinafter referred to as "DESIRE") method in which silicon injection processing is unnecessary.
  • DESIRE diffusion enhanced silylated resist
  • FIG. 1A is a cross sectional view after a chemically enhanced photoresist 3 coated on a lower layer 1 was exposed to light through a mask 4, to form exposed regions 5.
  • FIG. 1B is a cross sectional view after silicon was injected into the exposed regions 5 by a silylation process, to form silylated resist regions 6.
  • FIG. 1C is a cross sectional view after an oxygen plasma development process was carried out to form silicon oxide films 7 through the reaction of oxygen with the silicon of the silylated resist regions 6 and to form photoresist patterns 3' through etch of the unexposed regions of the photoresist 3, simultaneously.
  • a significant problem of this conventional DESIRE method is that critical dimension is changed, which is attributed to the fact that hydrolysis arises owing to the delay time between processes, causing the our-diffusion of silicon. And, this conventional method is problematic in pattern substantiality. That is, swelling occurs when using tetramethyl disilazane (TMDS), a compound comprising dimethyl silicon or hexamethyl disilazane (HMDS), a compound comprising trimethyl silicon because of bulkiness of the compounds. As a result, pattern deformation occurs.
  • TMDS tetramethyl disilazane
  • HMDS hexamethyl disilazane
  • the above object is accomplished by providing a method for forming photoresist patterns, comprising the steps of: coating a chemically enhanced photoresist film on a lower layer; forming a silicon monomer layer on the chemically enhanced photoresist film; exposing the monomer layer to light through a mask, to selectively polymerize the silicon monomer; removing the unexposed regions of the monomer layer by development; and subjecting the remaining polymerized regions to oxygen plasma developing process to form oxide films through reaction of oxygen with the silicon contained in the polymerized regions and to form photoresist patterns through selective etching of the photoresist film, with said oxide films serving as a mask.
  • exposure of silicon monomers generates protons from the chemical enhanced photoresist film which trigger the polymerization of silicon monomers.
  • the polymer thus formed is not removed by typical developing solutions and serves as a mask when etching the photoresist film with oxygen plasma because a thin silicon oxide (SiO 2 ) is formed on the polymer, which contains silicon.
  • FIGS. 1A to 1C are schematic cross sectional views showing a conventional DESIRE method for forming photoresist film patterns
  • FIGS. 2A to 2C are schematic cross sectional views showing a DESIRE method for forming photoresist film patterns, according to the present invention
  • FIGS. 3A and 3B show structural formulas of silicon monomers useful in the present invention.
  • FIGS. 4A and 4B show structural formulas of the polymers which are formed from the silicon monomers of FIG. 3A and 3B, respectively.
  • FIG. 2 there is illustrated a method for forming photoresist patterns according to the present invention.
  • FIG. 2A is a schematic cross section after a silicon monomer layer 2 is formed on a chemically enhanced photoresist film 3 coated on a lower layer 1, followed by exposure of the monomer layer to light through a mask 4, to change the exposed regions of the monomer layer 2 into polymeric films 7 containing silicon.
  • This polymer results from the polymerization of the silicon monomers themselves, which is triggered by acid (H + ).
  • H + is generated by a photo acid generator contained in the photoresist film 3 upon exposure.
  • the monomer is CR 2 CRSi(OR) 3 in which R is an alkyl or aryl.
  • the monomer is R 2 Si(OR) 2 where R is an alkyl or aryl.
  • FIG. 2B is a cross section after a developing process using a typical solution is carried out to remove the unexposed monomer regions 2 while leaving the polymeric regions 5.
  • FIG. 2C is a cross section after the resulting structure of FIG. 2B is subjected to oxygen plasma development, to form silicon oxide layers 7 through the reaction of oxygen with silicon contained in the polymer 5 and to form photoresist patterns 3' through the selective etch of the photoresist film 3 with the silicon oxide layers 7 serving as a mask.
  • Deep ultra violet, electron beams or X-rays can be used for exposing the monomers layer 2.
  • the present invention can be applied to a positive type chemically enhanced photoresist film.
  • R represents an alkyl or aryl.
  • FIG. 4 there are formulas showing the polymerization of the silicon monomers of FIG. 3.
  • the aforementioned problems of the conventional DESIRE method that is, the unstable critical dimension which is caused by the out-diffusion of silicon attributable to hydrolysis because of the time delay between processes that allows water to be formed, and corresponding poor pattern substantiality, are solved by the present invention.
  • the method according to the present invention exhibits the effect of silicon injection without requiring a silicon injection process.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Silicon Polymers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A method for forming photoresist patterns, comprising the steps of: coating a chemically enhanced photoresist film on a lower layer; forming a silicon monomer layer on the chemically enhanced photoresist film; exposing the monomer layer through a mask, to selectively polymerize the silicon monomer; removing the unexposed regions of the monomer layer by development; and subjecting the remaining polymerized regions to oxygen plasma developing process to form oxide films through reaction of oxygen with the silicon contained in the polymerized regions and to form photoresist patterns through selective etching of the photoresist film, with the oxide films serving as a mask. Exposure of the silicon monomer generates protons from the chemically enhanced photoresist film which trigger the polymerization of the silicon monomer. The polymer thus formed is not removed by typical developing solutions and serves as a mask when etching the photoresist film with oxygen plasma because a thin silicon oxide (SiO2) is formed on the silicon contained polymer.

Description

This is a continuation of U.S. application Ser. No. 08/541,968 filed Oct. 10, 1995, now abandoned.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates, in general, to a method for forming photoresist patterns and, more particularly, to a simple diffusion enhanced silylated resist (hereinafter referred to as "DESIRE") method in which silicon injection processing is unnecessary.
2. Description of the Prior Art
In order to better understand the background of the invention, a description of a conventional method utilizing DESIRE processing will be given below, in connection with FIG. 1.
FIG. 1A is a cross sectional view after a chemically enhanced photoresist 3 coated on a lower layer 1 was exposed to light through a mask 4, to form exposed regions 5.
FIG. 1B is a cross sectional view after silicon was injected into the exposed regions 5 by a silylation process, to form silylated resist regions 6.
FIG. 1C is a cross sectional view after an oxygen plasma development process was carried out to form silicon oxide films 7 through the reaction of oxygen with the silicon of the silylated resist regions 6 and to form photoresist patterns 3' through etch of the unexposed regions of the photoresist 3, simultaneously.
A significant problem of this conventional DESIRE method is that critical dimension is changed, which is attributed to the fact that hydrolysis arises owing to the delay time between processes, causing the our-diffusion of silicon. And, this conventional method is problematic in pattern substantiality. That is, swelling occurs when using tetramethyl disilazane (TMDS), a compound comprising dimethyl silicon or hexamethyl disilazane (HMDS), a compound comprising trimethyl silicon because of bulkiness of the compounds. As a result, pattern deformation occurs.
SUMMARY OF THE INVENTION
Accordingly, it is a principal object of the present invention to overcome the above problems encountered in the prior art and to provide a simple method for forming photoresist patterns, which is capable of showing the effect of silicon injection without requiring a silicon injection process.
Based on intensive and thorough research by the present inventors, the above object is accomplished by providing a method for forming photoresist patterns, comprising the steps of: coating a chemically enhanced photoresist film on a lower layer; forming a silicon monomer layer on the chemically enhanced photoresist film; exposing the monomer layer to light through a mask, to selectively polymerize the silicon monomer; removing the unexposed regions of the monomer layer by development; and subjecting the remaining polymerized regions to oxygen plasma developing process to form oxide films through reaction of oxygen with the silicon contained in the polymerized regions and to form photoresist patterns through selective etching of the photoresist film, with said oxide films serving as a mask.
According to the present invention, exposure of silicon monomers generates protons from the chemical enhanced photoresist film which trigger the polymerization of silicon monomers. The polymer thus formed is not removed by typical developing solutions and serves as a mask when etching the photoresist film with oxygen plasma because a thin silicon oxide (SiO2) is formed on the polymer, which contains silicon.
BRIEF DESCRIPTION OF THE DRAWINGS
The above object and other advantages of the present invention will become more apparent by describing in detail the preferred embodiments of the present invention with reference to the attached drawings in which:
FIGS. 1A to 1C are schematic cross sectional views showing a conventional DESIRE method for forming photoresist film patterns;
FIGS. 2A to 2C are schematic cross sectional views showing a DESIRE method for forming photoresist film patterns, according to the present invention;
FIGS. 3A and 3B show structural formulas of silicon monomers useful in the present invention; and
FIGS. 4A and 4B show structural formulas of the polymers which are formed from the silicon monomers of FIG. 3A and 3B, respectively.
DETAILED DESCRIPTION OF THE INVENTION
The application of the preferred embodiments of the present invention is best understood with reference to the accompanying drawings, wherein like reference numerals are used for like and corresponding parts, respectively.
Referring to FIG. 2, there is illustrated a method for forming photoresist patterns according to the present invention.
First, FIG. 2A is a schematic cross section after a silicon monomer layer 2 is formed on a chemically enhanced photoresist film 3 coated on a lower layer 1, followed by exposure of the monomer layer to light through a mask 4, to change the exposed regions of the monomer layer 2 into polymeric films 7 containing silicon. This polymer results from the polymerization of the silicon monomers themselves, which is triggered by acid (H+). H+ is generated by a photo acid generator contained in the photoresist film 3 upon exposure. In one preferred embodiment the monomer is CR2 CRSi(OR)3 in which R is an alkyl or aryl. In another preferred embodiment the monomer is R2 Si(OR)2 where R is an alkyl or aryl.
FIG. 2B is a cross section after a developing process using a typical solution is carried out to remove the unexposed monomer regions 2 while leaving the polymeric regions 5.
FIG. 2C is a cross section after the resulting structure of FIG. 2B is subjected to oxygen plasma development, to form silicon oxide layers 7 through the reaction of oxygen with silicon contained in the polymer 5 and to form photoresist patterns 3' through the selective etch of the photoresist film 3 with the silicon oxide layers 7 serving as a mask.
Deep ultra violet, electron beams or X-rays can be used for exposing the monomers layer 2. Although only negative type chemically enhanced photoresist film is stated, the present invention can be applied to a positive type chemically enhanced photoresist film.
Referring to FIG. 3, molecular structures of the silicon monomers used for the invention are shown. In the molecular structures, R represents an alkyl or aryl.
Referring to FIG. 4, there are formulas showing the polymerization of the silicon monomers of FIG. 3.
The aforementioned problems of the conventional DESIRE method, that is, the unstable critical dimension which is caused by the out-diffusion of silicon attributable to hydrolysis because of the time delay between processes that allows water to be formed, and corresponding poor pattern substantiality, are solved by the present invention. In addition, the method according to the present invention exhibits the effect of silicon injection without requiring a silicon injection process.
Other features, advantages and embodiments of the invention disclosed herein will be readily apparent to those exercising ordinary skill after reading the foregoing disclosures. In this regard, while specific embodiments of the invention have been described in considerable detail, variations and modifications of these embodiments can be effected without departing from the spirit and scope of the invention as described and claimed.

Claims (9)

What is claimed is:
1. A method for forming a photoresist pattern, comprising the steps of:
coating a chemically enhanced photoresist film on a lower layer;
forming a silicon monomer layer comprising CR2 CRSi(OR)3 wherein R is alkyl or aryl on the chemically enhanced photoresist film;
exposing the silicon monomer layer through a mask, to selectively polymerize the silicon monomer layer and form polymerized regions containing silicon;
removing the unexposed, unpolymerized regions of the silicon monomer layer by development;
subjecting the remaining polymerized regions to an oxygen plasma developing process to form a silicon oxide film on the polymerized regions through reaction of oxygen with the silicon contained in the polymerized regions; and
selectively etching the photoresist film using the silicon oxide film as a mask to form the photoresist pattern.
2. A method in accordance with claim 1, wherein the step of exposing the silicon monomer is performed by exposing the silicon monomer layer to light or an electron beam.
3. The method in accordance with claim 2, wherein the step of exposing the silicon monomer is performed by exposing the silicon monomer layer to deep ultraviolet, electron beam or x-ray radiation.
4. A method in accordance with claim 1, wherein the polymerization of the silicon monomer layer is triggered by a proton which is generated by a photo acid generator contained in the photoresist film upon exposure of the silicon monomer layer.
5. A method for forming a photoresist pattern, comprising the steps of:
coating a chemically enhanced photoresist film on a lower layer;
forming a layer on the chemically enhanced photoresist film, said layer consisting essentially of silicon monomer;
exposing the silicon monomer layer and chemically enhanced photoresist film through a mask to light or an electron beam, to selectively polymerize the silicon monomer layer and form polymerized regions containing silicon;
removing the unexposed, unpolymerized regions of the silicon monomer layer by development;
subjecting the remaining polymerized regions to an oxygen plasma development process to form a silicon oxide film on the polymerized regions through reaction of oxygen with the silicon contained in the polymerized regions; and
selectively etching the photoresist film using the silicon oxide film as a mask to form the photoresist pattern.
6. The method of claim 5, wherein the step of exposing the silicon monomer and chemically enhanced photoresist film is performed by exposing the silicon monomer layer to ultraviolet, electron beam or x-ray radiation.
7. The method of claim 6, wherein said silicon monomer is selected from the group consisting of CR2 CRSi(OR)3 and R2 Si(OR)2 wherein R is alkyl or aryl.
8. The method of claim 5, wherein the polymerization of the silicon monomer layer is triggered by protons that are generated by a photo acid generator contained in the chemically enhanced photoresist film upon exposure to the light or electron beam.
9. The method of claim 8, wherein the step of exposing the silicon monomer and chemically enhanced photoresist film is performed by exposing the silicon monomer layer to ultraviolet, electron beam or x-ray radiation.
US08/816,479 1994-10-12 1997-03-13 Method for forming photoresist pattern Expired - Lifetime US5759748A (en)

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KR1019940026082A KR0140472B1 (en) 1994-10-12 1994-10-12 Method for forming a photoresist pattern
KR94-26082 1994-10-12
US54196895A 1995-10-10 1995-10-10
US08/816,479 US5759748A (en) 1994-10-12 1997-03-13 Method for forming photoresist pattern

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6140023A (en) * 1998-12-01 2000-10-31 Advanced Micro Devices, Inc. Method for transferring patterns created by lithography
US6566280B1 (en) * 2002-08-26 2003-05-20 Intel Corporation Forming polymer features on a substrate
US6627378B1 (en) * 1999-11-12 2003-09-30 Hyundai Electronics Industries Co., Ltd Photoresist composition for top-surface imaging process by silylation
US20040014326A1 (en) * 2002-07-17 2004-01-22 Kuen-Sane Din Bi-layer resist process
US20040048200A1 (en) * 2002-09-11 2004-03-11 Renesas Technology Corp. Method for forming fine pattern on substrate by using resist pattern, and resist surface treatment agent
US20040126715A1 (en) * 2002-12-30 2004-07-01 International Business Machines Corporation Method for employing vertical acid transport for lithographic imaging applications

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US20020039809A1 (en) * 1998-09-03 2002-04-04 Bradley J. Howard Process for using photo-definable layers in the manufacture of semiconductor devices and resulting structures of same
KR100694422B1 (en) * 2000-07-31 2007-03-12 주식회사 하이닉스반도체 Manufacturing method for semiconductor device
DE10114861B4 (en) * 2001-03-26 2004-02-26 Infineon Technologies Ag Method and device for removing paint from an area on a mask substrate
US7867688B2 (en) * 2006-05-30 2011-01-11 Eastman Kodak Company Laser ablation resist
CN102478762B (en) * 2010-11-24 2014-02-26 中芯国际集成电路制造(上海)有限公司 Photoetching method

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US4560641A (en) * 1982-03-26 1985-12-24 Hitachi, Ltd. Method for forming fine multilayer resist patterns
US4657843A (en) * 1984-05-30 1987-04-14 Fujitsu Limited Use of polysilsesquioxane without hydroxyl group for forming mask
US4908299A (en) * 1984-07-03 1990-03-13 Matsushita Electric Industrial Co., Ltd. Pattern forming method
DE3537626A1 (en) * 1984-10-26 1986-04-30 Merck Patent Gmbh, 6100 Darmstadt Coating solutions
US5093224A (en) * 1989-03-27 1992-03-03 Matsushita Electric Industrial Co., Ltd. Process for producing fine patterns using cyclocarbosilane
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6140023A (en) * 1998-12-01 2000-10-31 Advanced Micro Devices, Inc. Method for transferring patterns created by lithography
US6627378B1 (en) * 1999-11-12 2003-09-30 Hyundai Electronics Industries Co., Ltd Photoresist composition for top-surface imaging process by silylation
US20040014326A1 (en) * 2002-07-17 2004-01-22 Kuen-Sane Din Bi-layer resist process
US6743734B2 (en) * 2002-07-17 2004-06-01 Macronix International Co., Ltd. Bi-layer resist process
US6566280B1 (en) * 2002-08-26 2003-05-20 Intel Corporation Forming polymer features on a substrate
US20040048200A1 (en) * 2002-09-11 2004-03-11 Renesas Technology Corp. Method for forming fine pattern on substrate by using resist pattern, and resist surface treatment agent
US20040126715A1 (en) * 2002-12-30 2004-07-01 International Business Machines Corporation Method for employing vertical acid transport for lithographic imaging applications
US20060257786A1 (en) * 2002-12-30 2006-11-16 International Business Machines Corporation Method for employing vertical acid transport for lithographic imaging applications
US7160665B2 (en) * 2002-12-30 2007-01-09 International Business Machines Corporation Method for employing vertical acid transport for lithographic imaging applications
US7585609B2 (en) 2002-12-30 2009-09-08 International Business Machines Corporation Bilayer film including an underlayer having vertical acid transport properties

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GB2294124B (en) 1998-06-10
CN1144344A (en) 1997-03-05
KR960015075A (en) 1996-05-22
GB2294124A (en) 1996-04-17
CN1074550C (en) 2001-11-07
JP2840052B2 (en) 1998-12-24
JPH08240913A (en) 1996-09-17
GB9520610D0 (en) 1995-12-13
DE19537716A1 (en) 1996-04-18
DE19537716C2 (en) 2000-03-09
KR0140472B1 (en) 1998-06-15

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