US4162185A - Utilizing saturated and unsaturated halocarbon gases in plasma etching to increase etch of SiO2 relative to Si - Google Patents

Utilizing saturated and unsaturated halocarbon gases in plasma etching to increase etch of SiO2 relative to Si Download PDF

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US4162185A
US4162185A US05/888,882 US88888278A US4162185A US 4162185 A US4162185 A US 4162185A US 88888278 A US88888278 A US 88888278A US 4162185 A US4162185 A US 4162185A
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halocarbon
unsaturated
plasma etching
saturated
sio
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US05/888,882
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John W. Coburn
Harold F. Winters
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International Business Machines Corp
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Priority to DE7979100510T priority patent/DE2963520D1/en
Priority to EP79100510A priority patent/EP0004285B1/en
Priority to IT21038/79A priority patent/IT1166707B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Definitions

  • This invention relates to plasma etching and more particularly to plasma etching with a gaseous mixture containing an unsaturated halocarbon and a saturated halocarbon.
  • Plasma etching has been recently evaluated for semiconductor processing since it promises a number of advantages over wet chemical methods in terms of terms of improved yield and resolution at lower cost. Specifically, plasma etching is used to form a window through silica (SiO 2 ) films on silcon (Si) substrates. In this type of etching it is desirable for the etchant to have a high etch rate in SiO 2 relative to the etch rate of Si substrates. Most etchants used in plasma etching, however, etch SiO 2 at a rate that is not substantially different from the etch rate of Si.
  • Heinecke U.S. Pat. No. 3,940,506 Heinecke modified the gas supplied to the plasma so as to reduce the concentration of fluorine atoms.
  • Heinecke achieved this reduced concentration of fluorine atoms was to add hydrogen to the supply of carbon tetrafluoride.
  • Another approach was to add hydrogen in the form of a chemical compound such as ammonia. Heinecke stated that the presence of a hydrogen reduced the etch rate of Si much more than the etch rate of SiO 2 .
  • the FIGURE is a figure illustrating the relative etch rates of SiO 2 and Si in a C 3 F 6 --C 2 F 6 mixture.
  • the invention includes the use of etching with a plasma from a gaseous mixture containing an unsaturated halocarbon and a saturated halocarbon.
  • the preferred halogen is fluorine.
  • a preferred embodiment is a gas mixture containing C 3 F 6 and C 2 F 6 gas.
  • An apparatus suitable for performing the etching process consists essentially of four items; a bell jar system, a gas train for leaking gases or mixtures of gases into the bell jar, an RF generator for sustaining a plasma within the bell jar, and a vacuum pump. Any conventional plasma generating system may be employed and the electrode may be either within the system or a coil surrounding the outside of the system.
  • the excitation power is delivered by an r.f. generator that capacitively applies the power to the plasma.
  • a power of 50 to 150 watts, that is between 1/2 and 11/2 watts per square centimeter is an example thereof.
  • the frequency of the applied voltages is of the order of 13.56 MHz. Direct current may also be used. Both the power and the frequency can be varied over broad ranges as is well known to those skilled in the art.
  • the plasma etching is effected by passing a mixture of gases through the etching chamber.
  • the mixture of gases include an unsaturated halocarbon and a saturated halocarbon. While both the saturated and unsaturated halocarbon may contain fluorine, bromine and/or iodine, the preferred gaseous components contain fluorine or mixtures of fluorine with another halide. In other words, the unsaturated halocarbon may contain only one halogen or it may contain a mixture of two or more halogens, for example, C 3 F 6 , C 3 F 4 Cl 2 , C 3 F 2 Cl 2 Br 2 , and so forth.
  • the saturated halocarbon may contain only one halogen or a mixture of two or more halogens, for example, CF 4 , CF 3 Cl, CF 2 ClBr, and so forth.
  • Specific examples of preferred unsaturated halocarbons are C 3 F 6 and C 2 F 4 .
  • Examples of preferred saturated halocarbons are CF 4 and C 2 F 6 .
  • the gaseous mixture contains a single unsaturated halocarbon and a single saturated halocarbon. While it is possible to use more than the two gases set forth above, the halogen/carbon ratio is easier to adjust in a two component system, however, more than two gases may be used if desired.
  • the preferred halogen/carbon ratio needs to be determined experimentally for each particular system in order to find the preferred range since it may depend on the apparatus used. In the applicants' apparatus with unsaturated halocarbons containing fluorine, the preferred halogen/carbon ratio is between 2 and 3.
  • the unsaturated gas C 3 F 6 was mixed with the saturated gas C 2 F 6 to provide a flow rate of about 2.6 cm 3 /min.
  • the generator delivered 13.5 MHz rf power which resulted in a 100 watts being applied.
  • the excitation electrode area was 185 cm 2 .
  • the data set forth below show a comparison between the etch rate of SiO 2 and Si in A/minute as the percentage of the unsaturated component C 3 F 6 is increased in the gaseous mixture.
  • the etch rate with 0% C 3 F 6 was 7.3 for Si and 10.0 for SiO 2 .
  • a number of different combinations of unsaturated halocarbon and saturated halocarbon may be used in the etchings of Si wafers.
  • a mixture of C 2 F 4 and CF 4 having a total gas flow rate of 1.3 cm 3 /min was used.
  • the total pressure in the vacuum system was about 20 millitorr.
  • a 100 watts of power was applied at 13.56 MHz.
  • the SiO 2 excitation electrode area was 100 cm 2 .
  • the following tabulation sets forth the data obtained.
  • the etch rate of SiO 2 was 21.5 and the silcon etch rate of 0.5 occurred when 45.8% C 2 F 4 was used in the mixture.

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  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

{PG,1 A method of plasma etching silica at a faster rate than silicon involves using a gaseous mixture containing an unsaturated halocarbon and a saturated halocarbon. The preferred halocarbon contains fluorine. A preferred embodiment is a gaseous mixture containing C{HD 3{L F{HD 6 {L and C{HD 2{L F{HD 6{L .

Description

DESCRIPTION Technical Field
This invention relates to plasma etching and more particularly to plasma etching with a gaseous mixture containing an unsaturated halocarbon and a saturated halocarbon.
It is a primary object of this invention to provide an improved gas system for plasma etching.
It is a further object to provide a gas system for plasma etching that etches SiO2 at a faster rate than Si.
It is another object of this invention to provide a hydrogen free gas system for plasma etching.
It is still another object of this invention to provide a two gas system for plasma etching.
It is yet still another object of this invention to provide a gas system suitable for easy adjustment of the halogen/carbon ratio.
DESCRIPTION OF THE PRIOR ART
Plasma etching has been recently evaluated for semiconductor processing since it promises a number of advantages over wet chemical methods in terms of terms of improved yield and resolution at lower cost. Specifically, plasma etching is used to form a window through silica (SiO2) films on silcon (Si) substrates. In this type of etching it is desirable for the etchant to have a high etch rate in SiO2 relative to the etch rate of Si substrates. Most etchants used in plasma etching, however, etch SiO2 at a rate that is not substantially different from the etch rate of Si.
One approach to increasing the relative etch rate of SiO2 to Si was described in the patent to Heinecke U.S. Pat. No. 3,940,506. Heinecke modified the gas supplied to the plasma so as to reduce the concentration of fluorine atoms. One way Heinecke achieved this reduced concentration of fluorine atoms was to add hydrogen to the supply of carbon tetrafluoride. Another approach was to add hydrogen in the form of a chemical compound such as ammonia. Heinecke stated that the presence of a hydrogen reduced the etch rate of Si much more than the etch rate of SiO2.
In Solid State Electronics, 1975, Vol. 18, pp 1146-1147 (printed in Great Britain) Heinecke describes the use of plasma etching with C3 F8 as the etchant in order to increase the relative etch rate of SiO2 /Si. In Solid State Electronics, 1976, Vol. 19, pp 1039-1040 (printed in Great Britain) Heincke describes the use of a single gas such as C4 F8, C5 F12, C2 F6 and CHF3 as a single gas etchant to be used in plasma etching. In the Japan J. Appl. Phys. Vol. 16 (1977), No. 1, Matsuo et al describes the use of a mixture of CF4 and C2 H4 for plasma etching. Matsuo reported that this gas mixture etches SiO2 faster than Si.
BRIEF DESCRIPTION OF THE DRAWINGS
The FIGURE is a figure illustrating the relative etch rates of SiO2 and Si in a C3 F6 --C2 F6 mixture.
DISCLOSURE OF THE INVENTION
For a further understanding of the invention, and the objects and advantages thereof, reference will be had to the following description and the accompanying drawings, and to the appended claims in which the various novel features of the invention are more particularly set forth.
Accordingly, the invention includes the use of etching with a plasma from a gaseous mixture containing an unsaturated halocarbon and a saturated halocarbon. The preferred halogen is fluorine. A preferred embodiment is a gas mixture containing C3 F6 and C2 F6 gas.
BEST MODE FOR CARRYING OUT THE INVENTION
We first describe a description of the processes embodying the invention in preferred forms.
An apparatus suitable for performing the etching process consists essentially of four items; a bell jar system, a gas train for leaking gases or mixtures of gases into the bell jar, an RF generator for sustaining a plasma within the bell jar, and a vacuum pump. Any conventional plasma generating system may be employed and the electrode may be either within the system or a coil surrounding the outside of the system. The excitation power is delivered by an r.f. generator that capacitively applies the power to the plasma. A power of 50 to 150 watts, that is between 1/2 and 11/2 watts per square centimeter is an example thereof. The frequency of the applied voltages is of the order of 13.56 MHz. Direct current may also be used. Both the power and the frequency can be varied over broad ranges as is well known to those skilled in the art.
In accordance with this invention, the plasma etching is effected by passing a mixture of gases through the etching chamber. The mixture of gases include an unsaturated halocarbon and a saturated halocarbon. While both the saturated and unsaturated halocarbon may contain fluorine, bromine and/or iodine, the preferred gaseous components contain fluorine or mixtures of fluorine with another halide. In other words, the unsaturated halocarbon may contain only one halogen or it may contain a mixture of two or more halogens, for example, C3 F6, C3 F4 Cl2, C3 F2 Cl2 Br2, and so forth. Similarly, the saturated halocarbon may contain only one halogen or a mixture of two or more halogens, for example, CF4, CF3 Cl, CF2 ClBr, and so forth. Specific examples of preferred unsaturated halocarbons are C3 F6 and C2 F4. Examples of preferred saturated halocarbons are CF4 and C2 F6.
Preferably the gaseous mixture contains a single unsaturated halocarbon and a single saturated halocarbon. While it is possible to use more than the two gases set forth above, the halogen/carbon ratio is easier to adjust in a two component system, however, more than two gases may be used if desired. The preferred halogen/carbon ratio needs to be determined experimentally for each particular system in order to find the preferred range since it may depend on the apparatus used. In the applicants' apparatus with unsaturated halocarbons containing fluorine, the preferred halogen/carbon ratio is between 2 and 3.
EXAMPLE 1
In a plasma etching system in which the total pressure was 20 millitorr, the unsaturated gas C3 F6 was mixed with the saturated gas C2 F6 to provide a flow rate of about 2.6 cm3 /min. The generator delivered 13.5 MHz rf power which resulted in a 100 watts being applied. The excitation electrode area was 185 cm2. The data set forth below show a comparison between the etch rate of SiO2 and Si in A/minute as the percentage of the unsaturated component C3 F6 is increased in the gaseous mixture. The etch rate with 0% C3 F6 was 7.3 for Si and 10.0 for SiO2. At a concentration of 5.9% C3 F6 the etch rate of Si had gone down to 2.0 whereas the etch rate of SiO2 was 9.3. For concentrations of 8.4 to 13.0, the Si had a negative etch rate, that is, a polymer formation occurred on the wafer. The data are illustrated in FIG. 1 which clearly show the faster etch rate of SiO2 over Si for the concentration range set forth.
______________________________________                                    
Percentage C.sub.3 F.sub.6                                                
                Si Etch     SiO.sub.2 Etch                                
in C.sub.2 F.sub.6 -C.sub.3 F.sub.6                                       
                Rate+       Rate+                                         
Mixture         (A/min)     (A/min)                                       
______________________________________                                    
0               7.3         10.0                                          
1.5             6.3         10.0                                          
3.8             4.1         10.6                                          
5.9             2.0         9.3                                           
8.4             -0.7*       9.0                                           
11.7            -3.2*       8.5                                           
13.0            -5.1*       2.7                                           
______________________________________                                    
 +Each rate measured on grounded wafers.                                  
 *A negative etch rate means polymer formation.
INDUSTRIAL APPLICABILITY
A number of different combinations of unsaturated halocarbon and saturated halocarbon may be used in the etchings of Si wafers.
EXAMPLE 2
A mixture of C3 F6 and CF4 was made under a total pressure of 20 millitorr. The gas flow rate was 1.6 cm3 /min. A power of 50 watts was applied at 13.5 MHz. The SiO2 excitation electrode area was 185 cm2. The following tabulation set forth the data obtained.
______________________________________                                    
Percentage of   Si Etch     SiO.sub.2 Etch                                
C.sub.3 F.sub.6 in CF.sub.4 -C.sub.3 F.sub.6                              
                Rate+       Rate+                                         
Mixture         (A/min)     (A/min)                                       
______________________________________                                    
0               16.9        11.7                                          
5.3             14.1        11.3                                          
10.5            10.9        11.0                                          
15.8            7.2         10.1                                          
20.9            2.1         8.5                                           
26.2            -1.3*       4.1                                           
32.0            -2.0*       -3.0*                                         
______________________________________                                    
 +Etch rate measured on grounded wafers.                                  
 *A negative etch rate means polymer formation.
In this system a gaseous mixture containing 20.9% C3 F6 had an SiO2 etch rate of 8.5 compared to a Si etch rate of 2.1 at this concentration.
EXAMPLE 3
A mixture of C2 F4 and CF4 having a total gas flow rate of 1.3 cm3 /min was used. The total pressure in the vacuum system was about 20 millitorr. A 100 watts of power was applied at 13.56 MHz. The SiO2 excitation electrode area was 100 cm2. The following tabulation sets forth the data obtained. The etch rate of SiO2 was 21.5 and the silcon etch rate of 0.5 occurred when 45.8% C2 F4 was used in the mixture.
______________________________________                                    
Percentage C.sub.2 F.sub.4                                                
                Si Etch     SiO.sub.2 Etch                                
in CF.sub.4 --C.sub.2 F.sub.4                                             
                Rate+       Rate+                                         
Mixture         (A/min)     (A/min)                                       
______________________________________                                    
0               63.5        46.3                                          
9.2             68.5        44.2                                          
19.9            21.2        43.0                                          
29.1            3.2         35.2                                          
37.3            7.5         29.5                                          
45.8            0.5         21.5                                          
53.6            -0.7*       -2.4*                                         
61.8            -42.5*      -35.9*                                        
69.5            -118.0*     -41.6*                                        
______________________________________                                    
 +Etch rate measured on grounded wafers.                                  
 *Negative etch rate means polymer formation.
While I have illustrated and described the preferred embodiment of my invention, it is understood that I do not limit myself to the precise compositions herein and the right is reserved to allow changes and modifications coming within the scope of the invention as defined in the appended claims.

Claims (9)

We claim:
1. A method of adjusting the SiO2 /Si etch rate ratio in an article having both SiO2 and Si in a plasma etching system comprising the steps of
introducing a controllable flow rate of a saturated halocarbon gas into a plasma etching system,
introducing a controllable flow rate of an unsaturated halocarbon gas into said plasma etching system to mix with the saturated hydrocarbon gas and form a plasma, and
adjusting the relative flow rates of the saturated halocarbon and the unsaturated halocarbon gases to control the SiO2 /Si etch rate ratio.
2. A method as described in claim 1 whereby the relative flow rates are adjusted by increasing the flow rate of the unsaturated hydrocarbon.
3. A method as described in claim 1 whereby the saturated halocarbon gas and the unsaturated halocarbon gas are mixed together prior to being introduced into the plasma etching system.
4. A method as described in claim 1 whereby said unsaturated halocarbon is C3 F6.
5. A method as described in claim 1 whereby said unsaturated halocarbon is C2 F4.
6. A method as described in claim 1 whereby said unsaturated halocarbon is C3 F4 and said saturated halocarbon is CF4.
7. A method as described in claim 1 whereby said unsaturated halocarbon contains fluorine.
8. A method as described in claim 7 whereby said saturated halocarbon contains fluorine.
9. A method as described in claim 8 whereby the relative flow rates of the gases are adjusted so that the halogen/carbon ratio of the gaseous mixture is a value between 2 and 3.
US05/888,882 1978-03-21 1978-03-21 Utilizing saturated and unsaturated halocarbon gases in plasma etching to increase etch of SiO2 relative to Si Expired - Lifetime US4162185A (en)

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US05/888,882 US4162185A (en) 1978-03-21 1978-03-21 Utilizing saturated and unsaturated halocarbon gases in plasma etching to increase etch of SiO2 relative to Si
CA314,409A CA1113352A (en) 1978-03-21 1978-10-26 Saturated and unsaturated halocarbon gases in plasma etching
JP974479A JPS54128285A (en) 1978-03-21 1979-02-01 Plasma etching method
DE7979100510T DE2963520D1 (en) 1978-03-21 1979-02-21 A method of plasma etching silica at a faster rate than silicon in an article comprising both
EP79100510A EP0004285B1 (en) 1978-03-21 1979-02-21 A method of plasma etching silica at a faster rate than silicon in an article comprising both
IT21038/79A IT1166707B (en) 1978-03-21 1979-03-16 SATURATED AND UNSATURED HALOGEN-CARBON COMPOUNDS GAS FOR PLASMA ATTACK

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IT (1) IT1166707B (en)

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EP0034041A1 (en) * 1980-02-06 1981-08-19 The University Of Dayton Method for cleaning metal parts
US4314875A (en) * 1980-05-13 1982-02-09 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4353777A (en) * 1981-04-20 1982-10-12 Lfe Corporation Selective plasma polysilicon etching
US4444617A (en) * 1983-01-06 1984-04-24 Rockwell International Corporation Reactive ion etching of molybdenum silicide and N+ polysilicon
US4473435A (en) * 1983-03-23 1984-09-25 Drytek Plasma etchant mixture
US4521275A (en) * 1982-07-06 1985-06-04 Texas Instruments Incorporated Plasma etch chemistry for anisotropic etching of silicon
US5338399A (en) * 1991-02-12 1994-08-16 Sony Corporation Dry etching method
US5366590A (en) * 1993-03-19 1994-11-22 Sony Corporation Dry etching method
US5597444A (en) * 1996-01-29 1997-01-28 Micron Technology, Inc. Method for etching semiconductor wafers
US5830807A (en) * 1994-03-18 1998-11-03 Fujitsu Limited Successive dry etching of alternating laminate
WO1999016110A2 (en) * 1997-09-19 1999-04-01 Applied Materials, Inc. Plasma process for selectively etching oxide using fluoropropane or fluoropropylene
US6074957A (en) * 1998-02-26 2000-06-13 Micron Technology, Inc. Methods of forming openings and methods of controlling the degree of taper of openings
US6103137A (en) * 1997-12-16 2000-08-15 Lg Semicon Co., Ltd. Method for etching oxide film in plasma etching system
US6387287B1 (en) 1998-03-27 2002-05-14 Applied Materials, Inc. Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window
US20030000913A1 (en) * 1999-03-25 2003-01-02 Hoiman Hung Highly selective process for etching oxide over nitride using hexafluorobutadiene
US6602434B1 (en) 1998-03-27 2003-08-05 Applied Materials, Inc. Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window
US10276439B2 (en) 2017-06-02 2019-04-30 International Business Machines Corporation Rapid oxide etch for manufacturing through dielectric via structures

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JPS6178113U (en) * 1984-10-25 1986-05-26
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EP0034041A1 (en) * 1980-02-06 1981-08-19 The University Of Dayton Method for cleaning metal parts
US4314875A (en) * 1980-05-13 1982-02-09 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4353777A (en) * 1981-04-20 1982-10-12 Lfe Corporation Selective plasma polysilicon etching
US4521275A (en) * 1982-07-06 1985-06-04 Texas Instruments Incorporated Plasma etch chemistry for anisotropic etching of silicon
US4444617A (en) * 1983-01-06 1984-04-24 Rockwell International Corporation Reactive ion etching of molybdenum silicide and N+ polysilicon
US4473435A (en) * 1983-03-23 1984-09-25 Drytek Plasma etchant mixture
US5338399A (en) * 1991-02-12 1994-08-16 Sony Corporation Dry etching method
US5366590A (en) * 1993-03-19 1994-11-22 Sony Corporation Dry etching method
US5830807A (en) * 1994-03-18 1998-11-03 Fujitsu Limited Successive dry etching of alternating laminate
US5597444A (en) * 1996-01-29 1997-01-28 Micron Technology, Inc. Method for etching semiconductor wafers
WO1999016110A2 (en) * 1997-09-19 1999-04-01 Applied Materials, Inc. Plasma process for selectively etching oxide using fluoropropane or fluoropropylene
WO1999016110A3 (en) * 1997-09-19 1999-06-10 Applied Materials Inc Plasma process for selectively etching oxide using fluoropropane or fluoropropylene
US6361705B1 (en) 1997-09-19 2002-03-26 Applied Materials, Inc. Plasma process for selectively etching oxide using fluoropropane or fluoropropylene
US6103137A (en) * 1997-12-16 2000-08-15 Lg Semicon Co., Ltd. Method for etching oxide film in plasma etching system
US6074957A (en) * 1998-02-26 2000-06-13 Micron Technology, Inc. Methods of forming openings and methods of controlling the degree of taper of openings
US6291359B1 (en) 1998-02-26 2001-09-18 Micron Technology, Inc. Methods of forming openings and methods of controlling the degree of taper of openings
US6387287B1 (en) 1998-03-27 2002-05-14 Applied Materials, Inc. Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window
US6602434B1 (en) 1998-03-27 2003-08-05 Applied Materials, Inc. Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window
US20030000913A1 (en) * 1999-03-25 2003-01-02 Hoiman Hung Highly selective process for etching oxide over nitride using hexafluorobutadiene
US6849193B2 (en) 1999-03-25 2005-02-01 Hoiman Hung Highly selective process for etching oxide over nitride using hexafluorobutadiene
US10276439B2 (en) 2017-06-02 2019-04-30 International Business Machines Corporation Rapid oxide etch for manufacturing through dielectric via structures

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DE2963520D1 (en) 1982-10-07
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IT7921038A0 (en) 1979-03-16
JPS5741817B2 (en) 1982-09-04
IT1166707B (en) 1987-05-06
CA1113352A (en) 1981-12-01
EP0004285A1 (en) 1979-10-03

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