US3094650A - Method of making multiple layer condensers by vapor deposition and product thereof - Google Patents
Method of making multiple layer condensers by vapor deposition and product thereof Download PDFInfo
- Publication number
- US3094650A US3094650A US23955A US2395560A US3094650A US 3094650 A US3094650 A US 3094650A US 23955 A US23955 A US 23955A US 2395560 A US2395560 A US 2395560A US 3094650 A US3094650 A US 3094650A
- Authority
- US
- United States
- Prior art keywords
- film
- dielectric
- vapor deposition
- pinholes
- vaporized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007740 vapor deposition Methods 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000010408 film Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000012789 electroconductive film Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 description 13
- 239000002184 metal Substances 0.000 description 7
- 239000007795 chemical reaction product Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-NJFSPNSNSA-N silicon-30 atom Chemical compound [30Si] XUIMIQQOPSSXEZ-NJFSPNSNSA-N 0.000 description 2
- 239000011364 vaporized material Substances 0.000 description 2
- 235000013175 Crataegus laevigata Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
Definitions
- the present invention relates to a method of forming multiple layer electrical conductive objects separated by a film of dielectric, such as condensers, and also to the end product thereof.
- a vaporized electro-conductive film is first deposited on a base or substratum, a film of dielectric material is next superimposed on the former film and a second film of vaporized, conductive material is deposited over the dielectric.
- the dielectric tends to disperse forming small apertures or pinholes in the stabilized film.
- the overlying layer of vaporized, conductive material the latter in its vaporized condition enters the pinholes of the dielectric and condenses to form communication between the electro-conductive outer films sandwiching the dielectric.
- Upon impressing an electric charge across the condenser plates a short circuit is effected.
- Multiple layers of dielectric deposited one on the other are of no avail because the formed pinholes tend to register maintaining communication of the deposited and sandwiching outer walls.
- a film of semiconductive material of low intrinsic conductivity and of high purity is deposited in the formation of the product to enter and close the pinholes land to separate the dielectric from at least one of the sandwiohing electro-conductive films substantially preventing passage of electrical current through material deposited in the defined pinholes of the dielectric and thus preventing short circuiting of the end product.
- a principal object of the present invention is to provide a method of forming a sandwiched dielectric through vapor deposition which formed structure will not result in short circuiting in use of the end product.
- Another object resides in the utilization of an oxidizable high resistance material superimposed in a film over the dielectric.
- oxidation appears to occur in the high resistance material entering the pinholes, which may result from migration with the dielectric or from absorption of oxygen from the environment, and the high resistance material entering the pinholes thus appears to be converted at least in part from a non-dielectric to a dielectric.
- FIG. 1 illustrates in exaggerated perspective a condenser formed in accordance with the present invention and showing certain films broken away to reveal the pinholes in the dielectric;
- FIG. 2 is an exaggerated cross section of a produced condenser similar to PIG.1.
- the art of coating by vapor deposition comprises establishing a Zone of vaporizaiton within an evacuated chamber to vaporize material therein and thereafter ice depositing the vaporized material upon a substratum for condensation upon an article to be coated.
- a Zone of vaporizaiton within an evacuated chamber to vaporize material therein and thereafter ice depositing the vaporized material upon a substratum for condensation upon an article to be coated.
- a base material 12 which in a selected embodiment is glass, is deposited within a suitable chamber to receive vaporized material thereon.
- a vaporized film of electro-conductive material 14 such as metal is next deposited and condensed on base 12 to coat the latter.
- the vaporized dielectric 16 has been deposited on metallic film 14. Due to certain factors presently unknown to applicant, the dielectric disperses to define small pinholes 18 which have been exaggerated for purposes of illustration. If the second metallic film 20 in vaporized form were deposited immediately on dielectric 16, film 20 in its vaporized condition would enter apertures 18 establishing, when condensed, electrical communication between metallic films 14 and 20 and etfecting a short circuit in use of the formed condenser. According to the present invention a film of vaporized, semiconductive material 22 of high purity is deposited on the dielectric to completely cover the latter and fill the apertures 18. When a film 20 of vaporized metal is thereafter deposited, resistance material 22 prevents electrical communication between the metal film '14- and metal film 2t) and avoids the short circuiting in use of the end product.
- FIG. 2 illustrates a preferred embodiment of a condenser formed with specific materials superimposed one on the other through vapor deposition.
- Base 24 has been covered by a layer of metal 26 which in turn is covered by dielectric 28 formed of silicon oxide.
- dielectric 28 formed of silicon oxide.
- a film of silicon 30 of relatively high purity overlies dielectric 28' and has also entered the formed pinholes 32 in the dielectric.
- a second film of metal 34 has been deposited on dielectric 30.
- a film of silicon 30 may be deposited on metal 26 with dielectric 28 overlying it and the dielectric may or may not be superimposed by additional resistance material 30 and still prevents short circuiting in the use of the end product.
- an oxidizable material such as silicon is deposited upon dielectric 28 and permitted to enter pinholes 32, oxidation appears to occur, converting the silicon at least in part to a dielectric and eliminating the problem of leaking caused by pinholes in the dielectric.
- a method of forming multiple layer objects by vapor deposition on a base including the steps of depositing a first film of vaporized electro-conductive material on the base, depositing a film of vaporized silicon oxide upon said first film and permitting said film of silicon oxide to cure to define a plurality of pinholes, deposiitng -a film of silicon on said film of silicon oxide to cover the latter and enter the defined pinholes, and then depositing a second vaporized electro-conductive film on said film of silicon.
- a condenser formed by vapor deposition including a film of silicon oxide sandwiched by first and second electro-conductive films; said film of silicon oxide defining a plurality of pinholes, and a lamina of silicon disposed between said film of silicon oxide and one of said metallic films and penetrating said defined pinholes.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
June 18, 1963 R. P. RIEGERT 3,0 0
METHOD OF MAKING MULTIPLE LAYER CONDENSERS BY VAPOR DEPOSITION AND PRODUCT THEREOF Filed April 22, 1960 INVENTOR. R/CHARD P R/EGERT By Q W:
ATTORNEY United States Patent 3,094,650 METHOD OF MAKING MULTIPLE LAYER CON- DENSERS BY VAPOR DEPOSITION AND PROD- UCT THEREOF Richard P. Riegert, Goleta, Califi, assignor to Servemechanisms, Inc., Hawthorne, Califi, a corporation of New York Filed Apr. 22, 1960, Ser. No. 23,955 2 Claims. (Cl. 317-458) The present invention relates to a method of forming multiple layer electrical conductive objects separated by a film of dielectric, such as condensers, and also to the end product thereof.
In the art of forming such objects by vapor deposition a vaporized electro-conductive film is first deposited on a base or substratum, a film of dielectric material is next superimposed on the former film and a second film of vaporized, conductive material is deposited over the dielectric. In practice, the dielectric tends to disperse forming small apertures or pinholes in the stabilized film. Thus upon depositing the overlying layer of vaporized, conductive material, the latter in its vaporized condition enters the pinholes of the dielectric and condenses to form communication between the electro-conductive outer films sandwiching the dielectric. Upon impressing an electric charge across the condenser plates a short circuit is effected. Multiple layers of dielectric deposited one on the other are of no avail because the formed pinholes tend to register maintaining communication of the deposited and sandwiching outer walls.
In accordance with the present invention a film of semiconductive material of low intrinsic conductivity and of high purity is deposited in the formation of the product to enter and close the pinholes land to separate the dielectric from at least one of the sandwiohing electro-conductive films substantially preventing passage of electrical current through material deposited in the defined pinholes of the dielectric and thus preventing short circuiting of the end product.
A principal object of the present invention is to provide a method of forming a sandwiched dielectric through vapor deposition which formed structure will not result in short circuiting in use of the end product.
Another object resides in the utilization of an oxidizable high resistance material superimposed in a film over the dielectric. In this connection oxidation appears to occur in the high resistance material entering the pinholes, which may result from migration with the dielectric or from absorption of oxygen from the environment, and the high resistance material entering the pinholes thus appears to be converted at least in part from a non-dielectric to a dielectric.
The foregoing and other objects will be appreciated upon reading the following written description with reference to the accompanying drawings wherein:
FIG. 1 illustrates in exaggerated perspective a condenser formed in accordance with the present invention and showing certain films broken away to reveal the pinholes in the dielectric; and
FIG. 2 is an exaggerated cross section of a produced condenser similar to PIG.1.
Briefly, the art of coating by vapor deposition comprises establishing a Zone of vaporizaiton within an evacuated chamber to vaporize material therein and thereafter ice depositing the vaporized material upon a substratum for condensation upon an article to be coated. For a detailed description of a preferred means of vapor deposition the reader is referred to Ora F. Kuhlman patent application, Serial No. 568,345 filed February 28, 1956, now Patent No. 2,960,457, for Method of Vaporizing Coating Materials.
In connection with the present invention a base material 12, which in a selected embodiment is glass, is deposited within a suitable chamber to receive vaporized material thereon. A vaporized film of electro-conductive material 14 such as metal is next deposited and condensed on base 12 to coat the latter.
In the illustrated condenser, the vaporized dielectric 16 has been deposited on metallic film 14. Due to certain factors presently unknown to applicant, the dielectric disperses to define small pinholes 18 which have been exaggerated for purposes of illustration. If the second metallic film 20 in vaporized form were deposited immediately on dielectric 16, film 20 in its vaporized condition would enter apertures 18 establishing, when condensed, electrical communication between metallic films 14 and 20 and etfecting a short circuit in use of the formed condenser. According to the present invention a film of vaporized, semiconductive material 22 of high purity is deposited on the dielectric to completely cover the latter and fill the apertures 18. When a film 20 of vaporized metal is thereafter deposited, resistance material 22 prevents electrical communication between the metal film '14- and metal film 2t) and avoids the short circuiting in use of the end product.
FIG. 2 illustrates a preferred embodiment of a condenser formed with specific materials superimposed one on the other through vapor deposition. Base 24 has been covered by a layer of metal 26 which in turn is covered by dielectric 28 formed of silicon oxide. A film of silicon 30 of relatively high purity overlies dielectric 28' and has also entered the formed pinholes 32 in the dielectric. Finally a second film of metal 34 has been deposited on dielectric 30.
It will be readily apparent that a film of silicon 30 may be deposited on metal 26 with dielectric 28 overlying it and the dielectric may or may not be superimposed by additional resistance material 30 and still prevents short circuiting in the use of the end product. Where, however, an oxidizable material such as silicon is deposited upon dielectric 28 and permitted to enter pinholes 32, oxidation appears to occur, converting the silicon at least in part to a dielectric and eliminating the problem of leaking caused by pinholes in the dielectric.
The invention has been described for purposes of illustration with reference to condensers. It .will be appreciated that the invention has utility in substantially any situation where two electro-conductive layers require an interposed insulating material. For example, the invention lends admirably to the insulation of circuits printed one on another.
Thus, although the foregoing invention has been described in some detail for purposes of clarity, it will be appreciated that certain modifications may be made within the spirit of the invention as limited only by the appended claims.
What is claimed is:
1. A method of forming multiple layer objects by vapor deposition on a base including the steps of depositing a first film of vaporized electro-conductive material on the base, depositing a film of vaporized silicon oxide upon said first film and permitting said film of silicon oxide to cure to define a plurality of pinholes, deposiitng -a film of silicon on said film of silicon oxide to cover the latter and enter the defined pinholes, and then depositing a second vaporized electro-conductive film on said film of silicon.
2. A condenser formed :by vapor deposition including a film of silicon oxide sandwiched by first and second electro-conductive films; said film of silicon oxide defining a plurality of pinholes, and a lamina of silicon disposed between said film of silicon oxide and one of said metallic films and penetrating said defined pinholes.
References Cited in the file of this patent UNITED STATES PATENTS 2,497,066 Brennan Feb. 14, 1950 2,685,728 Ohl Aug. 10, 1954 2,740,928 Ward Apr. 3, 1956 FOREIGN PATENTS 1,043,537 Germany Nov. 13, 1958
Claims (1)
- 2. CONDENSER FORMED BY VAPOR DEPOSITION INCLUDING A FILM OF SILICON OXIDE SANDWICHED BY FIRST AND SECOND ELECTRO-CONDUCTIVE FILMS, SAID FILM OF SILICON OXIDE DEFINING A PLURALITY OF PINHOLES, AND A LAMINA OF SILICON DISPOSED
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23955A US3094650A (en) | 1960-04-22 | 1960-04-22 | Method of making multiple layer condensers by vapor deposition and product thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23955A US3094650A (en) | 1960-04-22 | 1960-04-22 | Method of making multiple layer condensers by vapor deposition and product thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3094650A true US3094650A (en) | 1963-06-18 |
Family
ID=21818119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US23955A Expired - Lifetime US3094650A (en) | 1960-04-22 | 1960-04-22 | Method of making multiple layer condensers by vapor deposition and product thereof |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US3094650A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3182376A (en) * | 1963-02-21 | 1965-05-11 | Sprague Electric Co | Silicon dioxide capacitor |
| US3201667A (en) * | 1960-12-20 | 1965-08-17 | Texas Instruments Inc | Titanium dioxide capacitor and method for making same |
| US3267342A (en) * | 1965-05-18 | 1966-08-16 | Corning Glass Works | Electrical capacitor |
| US3271718A (en) * | 1962-08-06 | 1966-09-06 | Tyco Laboratories Inc | Magnetic cores for electrical devices and method of manufacture |
| US3271201A (en) * | 1962-10-30 | 1966-09-06 | Itt | Planar semiconductor devices |
| US3273033A (en) * | 1963-08-29 | 1966-09-13 | Litton Systems Inc | Multidielectric thin film capacitors |
| US3274025A (en) * | 1963-12-13 | 1966-09-20 | Corning Glass Works | Method of forming an electrical capacitor |
| US3304469A (en) * | 1964-03-03 | 1967-02-14 | Rca Corp | Field effect solid state device having a partially insulated electrode |
| US3334002A (en) * | 1964-11-12 | 1967-08-01 | Siemens Ag | Method of manufacturing capacitor strips |
| US3372069A (en) * | 1963-10-22 | 1968-03-05 | Texas Instruments Inc | Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor |
| US3386864A (en) * | 1963-12-09 | 1968-06-04 | Ibm | Semiconductor-metal-semiconductor structure |
| US3691631A (en) * | 1970-01-29 | 1972-09-19 | Conductron Corp | Method of making a voltage actuatable switch |
| US4101200A (en) * | 1975-03-07 | 1978-07-18 | Balzers Patent-Und Beteiligungs-Aktiengesellschaft | Coating composition for a light transmitting absorbing coating on substrates |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2497066A (en) * | 1944-04-14 | 1950-02-14 | Everett D Mccurdy | Method of making condensers |
| US2685728A (en) * | 1949-02-21 | 1954-08-10 | Bell Telephone Labor Inc | Translating material and method of manufacture |
| US2740928A (en) * | 1956-04-03 | Manufacture of electric capacitors | ||
| DE1043537B (en) * | 1957-05-10 | 1958-11-13 | Licentia Gmbh | Process for the production of crystalline silicon layers for photoelectric purposes |
-
1960
- 1960-04-22 US US23955A patent/US3094650A/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2740928A (en) * | 1956-04-03 | Manufacture of electric capacitors | ||
| US2497066A (en) * | 1944-04-14 | 1950-02-14 | Everett D Mccurdy | Method of making condensers |
| US2685728A (en) * | 1949-02-21 | 1954-08-10 | Bell Telephone Labor Inc | Translating material and method of manufacture |
| DE1043537B (en) * | 1957-05-10 | 1958-11-13 | Licentia Gmbh | Process for the production of crystalline silicon layers for photoelectric purposes |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3201667A (en) * | 1960-12-20 | 1965-08-17 | Texas Instruments Inc | Titanium dioxide capacitor and method for making same |
| US3271718A (en) * | 1962-08-06 | 1966-09-06 | Tyco Laboratories Inc | Magnetic cores for electrical devices and method of manufacture |
| US3271201A (en) * | 1962-10-30 | 1966-09-06 | Itt | Planar semiconductor devices |
| US3182376A (en) * | 1963-02-21 | 1965-05-11 | Sprague Electric Co | Silicon dioxide capacitor |
| US3273033A (en) * | 1963-08-29 | 1966-09-13 | Litton Systems Inc | Multidielectric thin film capacitors |
| US3372069A (en) * | 1963-10-22 | 1968-03-05 | Texas Instruments Inc | Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor |
| US3386864A (en) * | 1963-12-09 | 1968-06-04 | Ibm | Semiconductor-metal-semiconductor structure |
| US3274025A (en) * | 1963-12-13 | 1966-09-20 | Corning Glass Works | Method of forming an electrical capacitor |
| US3304469A (en) * | 1964-03-03 | 1967-02-14 | Rca Corp | Field effect solid state device having a partially insulated electrode |
| US3334002A (en) * | 1964-11-12 | 1967-08-01 | Siemens Ag | Method of manufacturing capacitor strips |
| US3267342A (en) * | 1965-05-18 | 1966-08-16 | Corning Glass Works | Electrical capacitor |
| US3691631A (en) * | 1970-01-29 | 1972-09-19 | Conductron Corp | Method of making a voltage actuatable switch |
| US4101200A (en) * | 1975-03-07 | 1978-07-18 | Balzers Patent-Und Beteiligungs-Aktiengesellschaft | Coating composition for a light transmitting absorbing coating on substrates |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3094650A (en) | Method of making multiple layer condensers by vapor deposition and product thereof | |
| US3138744A (en) | Miniaturized self-contained circuit modules and method of fabrication | |
| GB1082106A (en) | Improvements in and relating to electrical circuits | |
| SE7513853L (en) | PROCEDURE FOR MANUFACTURE OF ELECTRICAL CONDUCTORS ON AN INSULATING SUBSTRATE | |
| US3457478A (en) | Wound film capacitors | |
| US3326718A (en) | Method for making an electrical capacitor | |
| US3380156A (en) | Method of fabricating thin film resistors | |
| US4628405A (en) | Integrated circuit precision capacitor | |
| US3759798A (en) | Method of producing electrically insulated aluminum contacts | |
| US3489953A (en) | Stabilized integrated circuit and process for fabricating same | |
| US3387952A (en) | Multilayer thin-film coated substrate with metallic parting layer to permit selectiveequential etching | |
| US3543102A (en) | Composite semiconductor device composed of a plurality of similar elements and means connecting together only those elements having substantially identical electrical characteristics | |
| GB974667A (en) | Improvements in and relating to the manufacture of multi-layer thin film electrical devices | |
| US3200326A (en) | Resistance-capacitance device employing conductive and non conductive iridized oxidefilms | |
| US3203830A (en) | Electrical resistor | |
| US3184329A (en) | Insulation | |
| US3158502A (en) | Method of manufacturing electrically insulated devices | |
| US3258723A (en) | Osafune ia | |
| US3359466A (en) | Method of improving the electrical characteristics of thin film metalinsulator-metalstructures | |
| US3350222A (en) | Hermetic seal for planar transistors and method | |
| KR850004344A (en) | Built-in resistor of cathode ray tube | |
| US3239731A (en) | Self-healing thin-film capacitor | |
| US3360688A (en) | Thin film resistor composed of chromium and vanadium | |
| US3324362A (en) | Electrical components formed by thin metallic form on solid substrates | |
| US6563191B1 (en) | Interdigitated capacitor with dielectric overlay |