TWI698291B - Substrate cleaning method and cleaning device - Google Patents

Abstract

The present invention discloses a method for cleaning a substrate without damaging the patterned structure on the substrate by using a super/megasonic device. The method includes: spraying liquid into the gap between the substrate and the super/megasonic device; The frequency of the megasonic power supply is f ₁ , and the power is P ₁ to drive the super/megasonic device; after the bubble implosion produces micro-jets and before the micro-jets generated by bubble implosion damage the patterned structure on the substrate, The frequency of the megasonic power supply is f ₂ and the power is P ₂ to drive the super/megasonic device; after the temperature in the bubble cools to the set temperature, the frequency of the megasonic power supply is set to f ₁ and the power is P ₁ ; Repeat the above steps until the substrate is cleaned.

Description

Substrate cleaning method and cleaning device

The present invention relates to a method and device for cleaning a substrate, and in particular to controlling the cavitation oscillation generated by an ultrasonic/megasonic device during the cleaning process to obtain stable or controllable cavitation oscillation on the entire substrate, effectively removing particles, and Does not damage the device structure on the substrate.

Semiconductor devices are formed on a semiconductor substrate through a series of different processing steps to form transistors and interconnects. Recently, the establishment of transistors has developed from two-dimensional to three-dimensional, such as fin-type field effect transistors and 3D NAND memory. In order to electrically connect the transistor terminal and the semiconductor substrate, it is necessary to make conductive (for example, metal) grooves, holes and other similar structures in the dielectric material of the semiconductor substrate as a part of the device. Slots and holes can transmit electrical signals and energy between transistors, internal circuits and external circuits.

In order to form a fin-type field effect transistor and an interconnect structure on a semiconductor substrate, the semiconductor substrate needs to go through multiple steps, such as masking, etching, and deposition to form the required electronic circuits. In particular, the multi-layer mask and plasma etching step can form a fin-type field effect transistor on the dielectric layer of the semiconductor substrate, and the 3D NAND flash memory cell and/or the pattern of the recessed area can be used as the fin and/or of the transistor Slots and vias of interconnect structure. In order to go In addition to particles and contamination generated in the fin structure and/or grooves and through holes during the etching or photoresist ashing process, wet cleaning must be performed. In particular, when the device manufacturing node is constantly approaching or smaller than 14 or 16 nm, the sidewall loss of fins and/or grooves and vias is the key to maintaining critical dimensions. In order to reduce or eliminate sidewall loss, it is very important to use mild, diluted chemical reagents, or sometimes only deionized water. However, diluted chemical reagents or deionized water usually cannot effectively remove the particles in the fin structure, 3D NAND holes and/or grooves and through holes. Therefore, mechanical force is required to effectively remove these particles, such as ultrasound/megasonic waves. Ultrasonic/megasonic waves can generate cavitation oscillations to provide mechanical force for the substrate structure. Violent cavitation oscillations such as unstable cavitation oscillations or micro-jets can damage these patterned structures. Maintaining stable or controllable cavitation oscillation is a key parameter to control the limit of mechanical damage and effectively remove particles. In the 3D NAND hole structure, the unsteady cavitation oscillation may not damage the hole structure, but the saturation of the bubbles in the hole will stop or reduce the cleaning effect.

In U.S. Patent No. 4,326,553, it is mentioned that megasonic energy can be combined with nozzles to clean semiconductor substrates. The fluid is pressurized, and megasonic energy is applied to the fluid through the megasonic sensor. A nozzle of a specific shape ejects a strip of liquid, which vibrates at a megasonic frequency on the surface of the substrate.

In U.S. Patent No. 6,039,059, it is mentioned that an energy source vibrates an elongated probe to transfer sound wave energy into the fluid. In one example, the fluid is sprayed on both sides of the substrate, and a probe is placed close to the upper surface of the substrate. In another example, a short probe tip is placed close to the substrate surface, and the probe moves on the substrate surface during the rotation of the substrate.

In U.S. Patent No. 6,843,257 B2, it is mentioned that an energy source causes a rod to vibrate about an axis parallel to the surface of the substrate. The surface of the rod is etched into curvilinear dendritic shapes, such as spiral grooves.

In order to effectively remove particles without damaging the device structure on the substrate, a good method is needed to control the cavitation oscillation generated by the ultrasonic/megasonic device during the cleaning process to obtain stable or controllable air on the entire substrate. Cavitation.

The present invention proposes a method for cleaning the patterned structure on the substrate without damage by maintaining stable air cavity oscillation when cleaning the substrate using ultrasonic/megasonic waves. Stable cavitation oscillation is achieved by setting the power of the sonic power supply to P ₁ when the time interval is less than τ ₁ and setting the power of the sonic power supply to P ₂ when the time interval is greater than τ _2. Repeat the above steps until the substrate is cleaned. P ₂ is equal to 0 or much less than the power P ₁ , τ ₁ is the time interval for the temperature in the bubble to rise to the critical implosion temperature, and τ ₂ is the time interval for the temperature in the bubble to drop far below the critical implosion temperature.

The present invention proposes another method for cleaning the patterned structure on the substrate without damage by maintaining stable air cavity oscillation when cleaning the substrate using ultrasonic/megasonic waves. Stable cavitation oscillations is provided through the acoustic power at _a frequency less than the time interval of τ f _1, is provided at the acoustic power is greater than the time interval τ ₂ for the frequency F _2, repeating the above steps until the substrate is cleaned, wherein, f _{2 is} much larger than f ₁ , preferably 2 or 4 times of f ₁ , τ ₁ is the time interval for the temperature in the bubble to rise to the critical implosion temperature, and τ ₂ is the temperature in the bubble drops far below the critical implosion The temperature interval.

The present invention also proposes a method for cleaning the patterned structure on the substrate without damage by maintaining stable air cavity oscillation when cleaning the substrate using ultrasonic/megasonic waves. The size of the bubbles is smaller than the spacing in the patterned structure. Stable bubble having a size smaller than a pitch within the patterned structure cavitation oscillations is provided an acoustic wave transmission power in the time interval τ ₁ is less than the internal strength ratio P _1, is provided at the acoustic power is greater than the time interval τ ₂ internal strength ratio P _2, repeat the above Step until the substrate is cleaned, where the power P ₂ is equal to 0 or much less than the power P ₁ , and τ ₁ is the time interval for the bubble size to increase to a critical size, which is equal to or greater than the pitch in the patterned structure, τ ₂ is the time interval at which the size of the bubble decreases to a value much smaller than the pitch in the patterned structure.

The present invention also proposes a method for cleaning the patterned structure on the substrate without damage by maintaining stable air cavity oscillation when cleaning the substrate using ultrasonic/megasonic waves. The size of the bubbles is smaller than the spacing in the patterned structure. Bubbles having a size of less than stable pitch within the patterned structure cavitation oscillations through the provided acoustic power at time intervals of less than ₁ frequency τ is f _1, provided acoustic power in the time interval is greater than τ ₂ frequency f _2, repeat the above Step until the substrate is cleaned, where f _{2 is} much larger than f ₁ , preferably 2 or 4 times of f ₁ , τ ₁ is the time interval for the bubble size to increase to the critical size, and the critical size is equal to or greater than The pitch in the patterned structure, τ ₂ is the time interval at which the size of the bubble is reduced to a value much smaller than the pitch in the patterned structure.

The present invention proposes a method of cleaning the substrate using ultrasonic/megasonic waves by maintaining a controllable unsteady air cavity oscillation to achieve a damage-free cleaning of the patterned structure on the substrate. Unsteady controlled cavitation oscillations is provided an acoustic wave transmission power in the time interval τ ₁ is less than the internal strength ratio P _1, is provided at the acoustic power is greater than the time interval τ ₂ internal strength ratio P _2, repeating the above steps until the substrate was washed Clean, where the power P ₂ is equal to 0 or much less than the power P ₁ , τ ₁ is the time interval for the temperature in the bubble to rise above the critical implosion temperature, and τ ₂ is the temperature within the bubble to fall far below the critical implosion The temperature interval. Controllable unsteady cavitation oscillation will provide higher PRE (particle removal efficiency) without damage to the patterned structure.

The present invention also proposes a method to achieve non-damaging cleaning of the patterned structure on the substrate by maintaining a controllable unsteady air cavity oscillation when cleaning the substrate using ultrasonic/megasonic waves. Unsteady controlled cavitation oscillations is provided an acoustic wave transmission power in the time interval τ ₁ is less than the frequency f _1, is provided at the acoustic power is greater than the time interval τ ₂ to frequency F _2, repeating the above steps until the substrate was washed Clean, where f _{2 is} much greater than f ₁ , preferably 2 or 4 times of f ₁ , τ ₁ is the time interval for the temperature in the bubble to rise above the critical implosion temperature, and τ ₂ is the temperature drop in the bubble Time interval well below the critical implosion temperature. Controllable unsteady cavitation oscillation will provide higher PRE (particle removal efficiency) without damage to the patterned structure.

1003‧‧‧Ultrasonic/Megasonic Device

1004‧‧‧Piezoelectric sensor

1008‧‧‧Acoustic Resonator

1010‧‧‧wafer

1012‧‧‧Nozzle

1014‧‧‧wafer chuck

1016‧‧‧Rotating drive device

1032‧‧‧Deionized water

2003‧‧‧Ultrasonic/Megasonic Device

4034‧‧‧Fine structure

6080‧‧‧Micro jet

6082‧‧‧Bubble

15034‧‧‧Pattern structure

15046‧‧‧Bubble

15048‧‧‧Bubble

16010‧‧‧wafer

16014‧‧‧wafer chuck

16016‧‧‧Rotating drive device

16060‧‧‧Deionized water (deionized water column)

16062‧‧‧Ultrasonic/Megasonic Device

16064‧‧‧Nozzle

17010‧‧‧wafer

17070‧‧‧Cleaning liquid chemical reagent

17072‧‧‧Ultrasonic/Megasonic Device

17074‧‧‧Solution tank

17076‧‧‧wafer box

20010‧‧‧Substrate

20034‧‧‧Through hole

20036‧‧‧Slot

1A-1B are exemplary embodiments of a wafer cleaning device using an ultrasonic/megasonic device; Figures 2A-2G show the various shapes of ultrasonic/megasonic sensors; Figure 3 shows the cavitation oscillation during wafer cleaning; Figure 4A-4B shows the pattern of unstable cavitation oscillation damage during the cleaning process on the wafer 5A-5C are changes in the internal thermal energy of the bubbles during the cleaning process; FIGS. 6A-6C are exemplary embodiments of the wafer cleaning method; FIGS. 7A-7C are still another exemplary embodiment of the wafer cleaning method; 8A-8D are still another exemplary embodiment of a wafer cleaning method; FIGS. 9A-9D are still another exemplary embodiment of a wafer cleaning method; FIGS. 10A-10B are still another exemplary embodiment of a wafer cleaning method 11A-11B is another exemplary embodiment of a wafer cleaning method; FIGS. 12A-12B are another exemplary embodiment of a wafer cleaning method; FIGS. 13A-13B are another exemplary implementation of a wafer cleaning method Examples; Figures 14A-14B are another exemplary embodiment of the wafer cleaning method; Figures 15A-15C are stable cavitation oscillations during the cleaning process to damage the patterned structure on the wafer; Figure 16 is the use of ultrasonic / megasonic wave Another exemplary embodiment of the wafer cleaning device of the device; FIG. 17 is an embodiment of a wafer cleaning device using an ultrasonic/megasonic device; FIGS. 18A-18C are another exemplary embodiment of a wafer cleaning method; 19 is another exemplary embodiment of the wafer cleaning method; FIGS. 20A-20D show that the bubble implosion occurs during the cleaning process without damaging the patterned structure on the wafer; 21A-21B are still another exemplary embodiment of a wafer cleaning method.

Figures 1A-1B illustrate a wafer cleaning device using an ultrasonic/megasonic device. The wafer cleaning device includes a wafer 1010, a wafer chuck 1014 driven and rotated by a rotating drive device 1016, a nozzle 1012 spraying cleaning liquid chemicals or deionized water 1032, an ultrasonic/megasonic device 1003, and an ultrasonic/megasonic power supply . The ultrasonic/megasonic device 1003 further includes a piezoelectric sensor 1004 and an acoustic resonator 1008 paired therewith. The sensor 1004 vibrates after being energized, and the resonator 1008 transfers high-frequency sound energy into the liquid. The cavitation oscillation generated by the ultrasonic/megasonic energy loosens the particles on the surface of the wafer 1010, so that the contaminants are separated from the surface of the wafer 1010, and then removed from the surface of the wafer through the flowing liquid 1032 provided by the shower head 1012.

Figures 2A-2G illustrate top views of the ultrasonic/megasonic device of the present invention. The ultrasonic/megasonic device 1003 shown in FIG. 1 can be replaced by an ultrasonic/megasonic device 2003 of different shapes, such as a triangle or pie shape as shown in FIG. 2A, a rectangle as shown in FIG. 2B, and an eighth as shown in FIG. 2C. The polygonal shape is the ellipse shown in Fig. 2D, the semicircle shown in Fig. 2E, the quarter circle shown in Fig. 2F, and the circle shown in Fig. 2G.

Figure 3 illustrates cavitation oscillations during compression. The shape of the bubble is gradually compressed from spherical A to apple-shaped G, and finally the bubble reaches implosion state I and forms a microjet. As shown in Figures 4A and 4B, the micro-jet is very violent (can reach thousands of atmospheres and thousands of degrees Celsius), which will damage the fine structure 4034 on the semiconductor wafer 1010, especially when the feature size is reduced to 70nm and more hour.

Figures 5A-5C illustrate simplified models of cavitation oscillations of the present invention. When the positive pressure of sound waves acts on the bubble, the bubble reduces its volume. In the volume reduction process, the acoustic pressure P _M is the bubble work, mechanical work converted to heat inside of the bubble, and therefore, the gas inside the bubble and / or the temperature of the steam increases.

The ideal gas equation can be expressed as follows: p ₀ v ₀ /T ₀ =pv/T (1)

Among them, P ₀ is the pressure inside the bubble before compression, V ₀ is the initial volume of the bubble before compression, T ₀ is the gas temperature inside the bubble before compression, P is the pressure inside the bubble under pressure, and V is the pressure inside the bubble under pressure. Volume, T is the gas temperature inside the bubble under pressure.

In order to simplify the calculation, it is assumed that the temperature of the gas does not change when the compression or compression is very slow. Since the liquid surrounds the bubbles, the temperature increase can be ignored. Thus, a bubble process (unit amount N from the volume to a volume of 1 unit or a compression ratio of the amount of N), the sound pressure P _M doing mechanical work W _m can be expressed as follows Compression:

Among them, S is the area of the cylinder section, x ₀ is the length of the cylinder, and p ₀ is the pressure of the gas in the cylinder before compression. Equation (2) does not consider the factor of temperature rise during compression. Therefore, due to the increase of temperature, the actual pressure in the bubble will be higher. In fact, the mechanical work done by sound pressure is greater than the value calculated by equation (2).

Suppose that the mechanical work done by sound pressure is partly converted into heat energy, and partly converted into the mechanical energy of the high-pressure gas and steam in the bubble. These heat energy completely promote the increase of the gas temperature inside the bubble (no energy is transferred to the liquid molecules around the bubble). The quality of the gas in the bubble remains unchanged. After the bubble is compressed once, the temperature increase △T can be expressed by the following equation: △T=Q/(mc)=β w _m /(mc)=β Sx ₀ p ₀ ln(x ₀ )/(mc) (3)

Among them, Q is the thermal energy converted from mechanical work, β is the ratio of thermal energy to the total mechanical work done by sound pressure, m is the gas mass in the bubble, and c is the specific heat coefficient of the gas. Set β=0.65, S=1E-12 m ² , x ₀ =1000μm=1E-3 m (compression ratio N=1000), p ₀ =1kg/cm ² =1E4 kg/m ² , m=8.9E-17kg for hydrogen gas, c=9.9E3 J/(kg ⁰ k) is substituted into equation (3), then △T=50.9℃.

The gas temperature T ₁ in the bubble after one compression can be calculated: T ₁ =T ₀ +△T=20℃+50.9℃=70.9℃ (4)

When the bubble reaches a minimum of 1 micron, as shown in Figure 5B. At such a high temperature, the liquid around the bubbles evaporates, and then the sound pressure becomes negative and the bubbles begin to increase. In this reverse process, the hot gas and steam with pressure P _G will do work on the surrounding liquid surface. Meanwhile, the sound pressure P _M stretching bubble toward the direction of expansion, shown in Figure 5C. Therefore, the negative sound pressure _PM also does some work on the surrounding liquid. As a result of the interaction, the heat energy in the bubble cannot be completely released or converted into mechanical energy. Therefore, the gas temperature in the bubble cannot be reduced to the initial gas temperature T ₀ or the liquid temperature. As shown in Fig. 6B, after the first period of cavitation oscillation is completed, the gas temperature T ₂ in the bubble will be between T ₀ and T ₁ . T ₂ can be expressed as follows: T ₂ =T1-δT=T ₀ +△T-δT (5)

Among them, δT is the temperature reduction after the bubble expands once, and δT is less than ΔT.

When the second period of cavitation oscillation reaches the minimum bubble size, the temperature T3 of the gas or vapor in the bubble is: T3=T2+△T=T ₀ +△T-δT+△T=T ₀ +2△T-δT ( 6)

When the second period of cavitation oscillation is completed, the temperature T4 of the gas or vapor in the bubble is: T4=T3-δT=T ₀ +2△T-δT-δT=T ₀ +2△T-2δT (7)

Similarly, when the nth cycle of cavitation oscillation reaches the minimum bubble size, the temperature T _2n-1 of the gas or vapor in the bubble is: T _2n-1 =T ₀ +n△T-(n-1)δT (8)

When the nth cycle of cavitation oscillation is completed, the temperature T _2n of the gas or steam in the bubble is: T _2n = T ₀ +n△T-nδT=T ₀ +n(△T-δT) (9)

As the number of cycles n of cavitation oscillation increases, the temperature of the gas and steam will also increase. Therefore, more and more molecules on the surface of the bubble evaporate into the bubble 6082, and the bubble 6082 becomes larger, as shown in FIG. 6C. Finally, the temperature of the compressed gas bubbles within the implosion process will reach a temperature T _i (T _i temperature implosion typically up to several thousand degrees Celsius) to form a heavy microprojection 6080, shown in Figure 6C.

According to formula (8), the number of implosion cycles n _i can be expressed as follows: n _i =(T _i -T ₀ -△T)/(△T-δT)+1 (10)

According to formula (10), the implosion time τ _i can be expressed as follows: τ _i =n _i t ₁ =t ₁ ((T _i -T ₀ -△T)/(△T-δT)+1) =n _i / f ₁ =((T _i -T ₀ -△T)/(△T-δT)+1)/f ₁ (11)

Among them, t ₁ is the cycle period, and f ₁ is the frequency of ultrasonic wave/megasonic wave.

According to formulas (10) and (11), the number of implosion cycles n _i and the implosion time τ _i can be calculated. Table 1 shows the relationship between the number of implosion cycles n _i , implosion time τ _i and (△T-δT), assuming Ti=3000℃, △T=50.9℃, T ₀ =20℃, f ₁ =500KHz, f ₁ =1MHz, and f ₁ =2MHz.

In order to avoid damage to the patterned structure on the wafer, it is necessary to maintain stable cavitation oscillation to avoid micro-jetting caused by bubble implosion. FIGS. 7A-7C show a patterned structure on the wafer without damaging the patterned structure by maintaining stable air cavity oscillation when cleaning the wafer with ultrasonic/megasonic waves according to the present invention. Fig. 7A is the output waveform of the power supply; Fig. 7B is the temperature curve corresponding to each cavitation oscillation period; Fig. 7C is the expansion size of the bubble corresponding to each cavitation oscillation period.

The process steps for avoiding bubble implosion according to the present invention are as follows:

Step 1: Place the ultrasonic/megasonic device near the surface of the wafer or substrate set on the chuck or in the solution tank;

Step 2: Fill the space between the wafer and the ultrasonic/megasonic device with chemical liquid or water mixed with gas (hydrogen, nitrogen, oxygen or carbon dioxide);

Step 3: Spin the chuck or vibrate the wafer;

Step 4: Set the power frequency to f ₁ and the power to P ₁ ;

Step 5: Before the gas or steam temperature in the bubble reaches the implosion temperature T _i (or the time reaches τ ₁ <τ _i , τ _i is calculated by formula (11)), set the output power of the power supply to 0 watts. Therefore, Since the temperature of the liquid or water is much lower than the temperature of the gas, the temperature of the gas inside the bubble begins to drop.

Step 6: After the gas temperature in the bubble is reduced to normal temperature T ₀ or the time (time of zero power) reaches τ ₂ , set the power supply frequency to f ₁ and power to P _{1 again} .

Step 7: Repeat step 1 to step 6 until the wafer is cleaned.

Step 5, in order to prevent the bubble burst, it must be less than the time τ ₁ τ _i, τ _i can be calculated by equation (11).

In step 6, the temperature of the gas in the bubble does not have to be cooled to the normal temperature or the temperature of the liquid. It can be a specific temperature higher than the normal temperature or the temperature of the liquid, but it is better to be much lower than the implosion temperature τ _i .

According to formulas (8) and (9), if (△T-δT) is known, τ _i can be calculated. But generally speaking, (△T-δT) is not easy to be calculated or obtained directly. The following steps can be used to obtain the implosion time τ _i through experiments.

Step 1: Based on Table 1, select five different times τ ₁ as the conditions set by the DOE experiment;

Step 2: Choose a time τ ₂ that is at least ten times τ ₁ , preferably 100 times τ ₁ in the first test.

Step 3: Use the determined power P _{0 to} run the above five conditions to clean the wafers with the patterned structure respectively. Here, P ₀ is the power determined to cause damage to the patterned structure of the wafer in a continuous uninterrupted mode (non-pulse mode).

Step 4: Use SEMS or wafer pattern damage viewing tools to check the damage of the above five types of wafers, such as AMAT SEM view or Hitachi IS3000, and then the implosion time τ _i can be determined in a certain range.

Repeat steps 1 to 4 to narrow the range of implosion time τ _i . Knowing the implosion time τ _i , τ ₁ can be set to a value less than 0.5τ _i under the safety factor. The following is an example to describe the experimental data: the patterned structure is a 55nm polysilicon grid line, the ultrasonic/megasonic frequency is 1MHZ, the ultrasonic/megasonic device manufactured by Prosys is used, in a spacing oscillation mode (PCT/CN2008/073471 published) Operate to achieve better uniform energy within and between wafers. Table 2 below summarizes other test parameters and the final pattern damage data:

It can be seen from the above table that under the feature size of 55nm, when τ ₁ =2ms (or the number of cycles is 2000), the damage to the patterned structure is as high as 1216 points; but τ ₁ =0.1ms (or the number of cycles is 100), the damage to the patterned structure is zero. Therefore, τ ₁ is a value between 0.1 ms and 2 ms, and further experiments are needed to reduce this range. Obviously, the number of cycles is related to the power density and frequency of ultrasonic/megasonic waves. The greater the power density, the smaller the number of cycles; the lower the frequency, the smaller the number of cycles. From the above experimental results, it can be predicted that the number of cycles without damage should be less than 2000, assuming that the power density of ultrasonic/megasonic waves is greater than 0.1w/cm ² and the frequency is less than or equal to 1MHZ. If the frequency is increased to more than 1MHZ or the power density is less than 0.1w/cm ² , it can be predicted that the number of cycles will increase.

Knowing the time τ ₁ , τ ₂ can be shortened based on the DEO method similar to the above. Determine the time τ ₁ and gradually shorten the time τ ₂ to run the DOE until it can be observed that the patterned structure is damaged. Since the time τ ₂ is shortened, the temperature of the gas or steam in the bubble cannot be sufficiently cooled, which will cause the average temperature of the gas or steam in the bubble to rise gradually, and eventually trigger the bubble implosion. The trigger time is called critical cooling time. After knowing the critical cooling time τ _c , in order to increase the safety factor, the time τ ₂ can be set to a value greater than 2τ _c .

Figures 8A-8D illustrate a method of cleaning a wafer using an ultrasonic/megasonic device according to the present invention. This method is similar to the method illustrated in FIG. 7A, except that in step 4, the frequency of the ultrasonic/megasonic power supply is set to f ₁ , and the power has a waveform with varying amplitude. Fig. 8A illustrates another cleaning method. In step 4, the frequency of the ultrasonic/megasonic power supply is set to f ₁ , and the power has a waveform with increasing amplitude. FIG. 8B illustrates another cleaning method. In step 4, the frequency of the ultrasonic/megasonic power supply is set to f ₁ , and the power has a waveform with a decreasing amplitude. Fig. 8C illustrates another cleaning method. In step 4, the frequency of the ultrasonic/megasonic power supply is set to f ₁ , and the power has a waveform whose amplitude first decreases and then increases. Fig. 8D illustrates another cleaning method. In step 4, the frequency of the ultrasonic/megasonic power supply is set to f ₁ , and the power has a waveform whose amplitude first increases and then decreases.

Figures 9A-9D illustrate a method of cleaning a wafer using an ultrasonic/megasonic device according to the present invention. This method is similar to the method illustrated in FIG. 7A, except that step 4 sets the frequency of the ultrasonic/megasonic power supply to a constantly changing frequency. Figure 9A illustrates another cleaning method. In step 4, the frequency of the ultrasonic/megasonic power supply is set to f _{1 first} , then f ₃ , and f _{1 is} higher than f ₃ . Fig. 9B illustrates another cleaning method. In step 4, the frequency of the ultrasonic/megasonic power supply is set to f ₃ first, then f ₁ , and f _{1 is} higher than f ₃ . Figure 9C illustrates another cleaning method. In step 4, the frequency of the ultrasonic/megasonic power supply is set to f ₃ first, then f ₁ , and finally f ₃ , and f _{1 is} higher than f ₃ . Fig. 9D illustrates another cleaning method. In step 4, the frequency of the ultrasonic/megasonic power supply is set to f _{1 first} , then f ₃ , and finally f ₁ , and f _{1 is} higher than f ₃ .

Similar to the method illustrated in Fig. 9C, in step 4, the frequency of the ultrasonic/megasonic power supply is set to f _{1 first} , then f ₃ , and finally f ₄ , and f _{4 is} smaller than f ₃ , and f _{3 is} smaller than f ₁ .

Similar to the method shown in Fig. 9C, in step 4, the frequency of the ultrasonic/megasonic power supply is set to f ₄ first, then f ₃ , and finally f ₁ , and f _{4 is} smaller than f ₃ , and f _{3 is} smaller than f ₁ .

Similar to the method shown in Fig. 9C, in step 4, the frequency of the ultrasonic/megasonic power supply is set to f _{1 first} , then f ₄ , and finally f ₃ , and f _{4 is} smaller than f ₃ , and f _{3 is} smaller than f ₁ .

Similar to the method shown in Fig. 9C, in step 4, the frequency of the ultrasonic/megasonic power supply is set to f ₃ first, then f ₄ , and finally f ₁ , and f _{4 is} smaller than f ₃ , and f _{3 is} smaller than f ₁ .

Similar to the method illustrated in Fig. 9C, in step 4, the frequency of the ultrasonic/megasonic power supply is set to f ₃ first, then f ₁ , and finally f ₄ , and f _{4 is} smaller than f ₃ , and f _{3 is} smaller than f ₁ .

Similar to the method illustrated in Fig. 9C, in step 4, the frequency of the ultrasonic/megasonic power supply is set to f ₄ first, then f ₁ , and finally f ₃ , and f _{4 is} smaller than f ₃ , and f _{3 is} smaller than f ₁ .

10A-10B illustrate the use of ultrasonic/megasonic waves to clean a wafer according to the present invention to achieve zero damage cleaning of the patterned structure on the wafer by maintaining stable air cavity oscillation. Fig. 10A is a waveform of the power supply output, and Fig. 10B is a temperature curve corresponding to each cycle of cavitation oscillation.

The operation process steps proposed by the present invention are as follows:

Step 1: Place the ultrasonic/megasonic device near the surface of the wafer or substrate set on the chuck or in the solution tank;

Step 2: Fill the space between the wafer and the ultrasonic/megasonic device with chemical liquid or water mixed with gas;

Step 3: Spin the chuck or vibrate the wafer;

Step 4: Set the power frequency to f ₁ and the power to P ₁ ;

Step 5: Before temperature in the gas or vapor bubbles implode reaches temperature T _i (total elapsed time τ _1), set the power of the output frequency f _1, power P _2, and P ₂ is less than P _1. Therefore, since the temperature of the liquid or water is much lower than the temperature of the gas, the temperature of the gas inside the bubble begins to drop.

Step 6: The temperature of the gas in the bubble is reduced to close to normal temperature T ₀ or the time (time of zero power) reaches τ ₂ , and the power supply frequency is set to f ₁ and the power to P _{1 again} .

Step 7: Repeat step 1 to step 6 until the wafer is cleaned.

In step 6, since the power is P ₂ , the temperature of the gas in the bubble cannot fall to room temperature, and a temperature difference ΔT _{2 needs to} exist in the time interval τ ₂ , as shown in Fig. 10B.

11A-11B illustrate a wafer cleaning method using an ultrasonic/megasonic device according to the present invention. It is similar to the method illustrated in FIG. 10A, except that step 5 sets the frequency of the ultrasonic/megasonic power supply to f ₂ and the power to P ₂ , where f _{2 is} less than f ₁ and P _{2 is} less than P ₁ . Since f _{2 is} smaller than f ₁ , the temperature of the gas or steam in the bubble rises rapidly, so P ₂ should be much smaller than P _1. In order to reduce the temperature of the gas or steam in the bubble, the difference between the two is preferably 5 or 10 times.

Figures 12A-12B illustrate a wafer cleaning method using an ultrasonic/megasonic device according to the present invention. It is similar to the method illustrated in FIG. 10A, except that step 5 sets the frequency of the ultrasonic/megasonic power supply to f ₂ and the power to P ₂ , where f _{2 is} greater than f ₁ and P ₂ is equal to P ₁ .

13A-13B illustrate a wafer cleaning method using an ultrasonic/megasonic device according to the present invention. It is similar to the method illustrated in FIG. 10A, except that step 5 sets the frequency of the ultrasonic/megasonic power supply to f ₂ and the power to P ₂ , where f _{2 is} greater than f ₁ and P _{2 is} less than P ₁ .

14A-14B illustrate a wafer cleaning method using an ultrasonic/megasonic device according to the present invention. It is similar to the method illustrated in FIG. 10A, except that step 5 sets the frequency of the ultrasonic/megasonic power supply to f ₂ and the power to P ₂ , where f _{2 is} greater than f ₁ and P _{2 is} greater than P ₁ . Since f _{2 is} greater than f ₁ , the temperature of the gas or vapor in the bubble rises slowly, so P ₂ can be slightly greater than P ₁ , but it must be ensured that the temperature of the gas or vapor in the bubble in the time interval τ ₂ is more than the time interval τ ₁ Decrease, as shown in Figure 14B.

Figures 4A-4B illustrate that the patterned structure is damaged by violent micro-jetting. Figures 15A-15B illustrate that stable cavitation oscillation can also damage the patterned structure on the wafer. As the cavitation oscillation continues, the temperature of the gas or vapor in the bubble rises, so the size of the bubble 15046 is also increasing, as shown in FIG. 15A. When the size of the bubble 15048 becomes larger than the spacing W in the patterned structure shown in FIG. 15B, the expansion of the air cavity oscillation will cause damage to the patterned structure 15034, as shown in FIG. 15C.

The following is another cleaning method proposed by the present invention:

Step 1: Place the ultrasonic/megasonic device near the surface of the wafer or substrate set on the chuck or in the solution tank;

Step 2: Fill the space between the wafer and the ultrasonic/megasonic device with chemical liquid or water mixed with gas;

Step 3: Spin the chuck or vibrate the wafer;

Step 4: Set the power frequency to f ₁ and the power to P ₁ ;

Step 5: Before the size of the bubble reaches the spacing W in the patterned structure (time τ ₁ elapses), set the output power of the power supply to 0 watts. Since the temperature of the liquid or water is much lower than the gas temperature, the gas temperature in the bubble starts decline.

Step 6: After the temperature of the gas in the bubble is cooled to normal temperature T ₀ or the time (time of zero power) reaches τ ₂ , set the power frequency to f ₁ and the power to P _{1 again} .

Step 7: Repeat step 1 to step 6 until the wafer is cleaned.

In step 6, the temperature of the gas in the bubble does not have to drop to room temperature, it can be any temperature, but it is better to be much lower than the implosion temperature T _i . In step 5, the size of the bubbles can be slightly larger than the size of the spacing in the patterned structure, as long as the expansion force of the bubbles does not damage the patterned structure.

The time τ ₁ can be determined by the following method:

Step 1: Similar to Table 1, select 5 different times τ ₁ as the conditions of the DOE experiment;

Step 2: selecting at least ten times τ ₁ is a time τ _2, the best choice for the initial test 100 times;

Step 3: Use the determined power P _{0 to} run the above five conditions to clean the wafers with patterned structures. Here, P ₀ is to determine the patterning of the wafer in the continuous uninterrupted mode (non-pulse mode) The power at which the structure causes damage.

Step 4: Use SEMS or wafer pattern damage viewing tools to check the damage degree of the above five wafers, such as AMAT SEM view or Hitachi IS3000, and then the damage time τ _i can be determined in a certain range.

Repeat steps 1 to 4 to narrow the range of damage time τ _d . Knowing the damage time τ _d , τ ₁ can be set to a value less than 0.5τ _d under the safety factor.

All the methods described in FIGS. 7 to 14 are applicable to this or combined with the method described in FIG. 15.

Figure 16 shows a wafer cleaning using an ultrasonic/megasonic device Example of washing device. The wafer cleaning device includes a wafer 16010, a wafer chuck 16014 driven and rotated by a rotating drive device 16016, a nozzle 16064 spraying cleaning liquid chemicals or deionized water 16060, an ultrasonic/megasonic device 16062 combined with a nozzle 16064, and ultrasonic/ Megasonic power supply. The ultrasonic/megasonic wave generated by the ultrasonic/megasonic device 16062 is transmitted to the wafer through the chemical reagent or the deionized water column 16060. All the cleaning methods described in FIGS. 7 to 15 are applicable to the cleaning device shown in FIG. 16.

Fig. 17 shows an embodiment of a wafer cleaning device using an ultrasonic/megasonic device. The wafer cleaning device includes a wafer 17010, a solution tank 17074, a wafer cassette 17076 placed in the solution tank 17074 to support the wafer 17010, a cleaning solution chemical reagent 17070, and an ultrasonic/megasonic wave set on the outer wall of the solution tank 17074 Device 17072 and ultrasonic/megasonic power supply. At least one inlet is used to fill the cleaning solution chemical reagent 17070 into the solution tank 17074 to immerse the wafer 17010. All the cleaning methods described in FIGS. 7 to 15 are applicable to the cleaning device shown in FIG. 17.

18A-18C illustrate an embodiment of a method for cleaning a wafer using an ultrasonic/megasonic device according to the present invention. This method is similar to the method shown in Figure 7A, except that in step 5, before the gas or vapor temperature in the bubble reaches the implosion temperature T _i (or the time reaches τ ₁ <τ _i , τ _i is calculated by equation (11)), Set the output value of the power supply to a positive or negative DC value to maintain or stop the vibration of the ultrasonic/megasonic device. Therefore, because the temperature of the liquid or water is much lower than the gas temperature, the gas temperature in the bubble begins to drop. The positive or negative value here can be greater than, equal to, or less than the power P ₁ .

FIG. 19 illustrates an embodiment of a method for cleaning a wafer using an ultrasonic/megasonic device according to the present invention. Similar to the method shown in Figure 7A, except that in step 5, before the gas or vapor temperature in the bubble reaches the implosion temperature T _i (or the time reaches τ ₁ <τ _i , τ _i is calculated by formula (11)), the power supply is set The output frequency of is the same as f ₁ , and the phase is opposite to that of f ₁ to quickly stop the bubble’s cavitation oscillation. Therefore, since the temperature of the liquid or water is much lower than the temperature of the gas, the temperature of the gas inside the bubble starts to drop. The positive or negative value here can be greater than, equal to, or less than the power P ₁ . During the above operation, the output frequency of the power supply can be different from the frequency f ₁ but the phase is opposite to the phase of f ₁ to quickly stop the cavitation oscillation of the bubbles.

Figures 20A-20D illustrate the occurrence of bubble implosion during cavitation oscillation caused by ultrasonic or megasonic waves without damaging the patterned structure on the wafer. In some cases, the patterned structures on the wafer 20010, such as through holes 20034 and grooves 20036, have a certain mechanical strength. In this way, the size of the bubbles generated by the high-frequency sound wave power is controlled to a relatively small size, which is much smaller than the patterned structure. Therefore, the force generated by the implosion of these small bubbles has very little effect on the patterned structure with a large size, or the material properties of the patterned structure itself can withstand a certain intensity of mechanical force. If the micro-jet force generated by bubble implosion is controlled within the strength that the patterned structure can withstand, the patterned structure will not be damaged. In addition, the mechanical force of the micro-jet generated by the bubble implosion helps to remove particles or residues on the surface of the wafer and in the patterned structure of the through holes and/or grooves to achieve higher cleaning efficiency. The micro-jet with controllable intensity, higher than the implosion point but lower than the damage point, is expected to obtain better cleaning performance and efficiency in the cleaning process.

Figures 21A-21B show that the sound wave power P ₁ acts on the bubble within time τ _1. When the temperature of the first bubble reaches its implosion temperature T _i , bubble implosion begins to occur, and then the temperature rises from T _i to During the temperature T _n (within the time Δτ), some bubble implosion continues to occur, and then, within the time interval τ ₂ , the sound wave power is turned off, and the temperature of the bubble cools from T _n to the initial temperature T ₀ . T _i is determined as the temperature threshold of the bubble implosion in the patterned structure of the via and/or groove, which triggers the first bubble implosion.

Since the heat transfer structure in the pattern is not completely uniform, the temperature reaches T _i, the more bubbles burst will continue to occur. When the implosion temperature T increases, the bubble implosion strength will become stronger and stronger. However, by controlling the temperature T _n below the temperature T _d (control time △τ), the bubble implosion can be controlled below the implosion intensity that will cause damage to the patterned structure, where T _n is the super/mega sound wave to the bubble The highest bubble temperature value obtained after continuous action for n cycles, T _d is the temperature at which a certain amount of bubble implosion accumulates, and the accumulated amount of bubble implosion has a high intensity (energy) that causes damage to the patterned structure. In the cleaning process, control the bubble implosion strength by controlling the time △τ after the first bubble implosion starts, so as to achieve the required cleaning performance and efficiency, and prevent the implosion strength from being too high to cause patterning Structural damage.

21A-21B illustrate another exemplary embodiment of the wafer cleaning method using the ultra/megasonic device of the present invention. In order to improve the particle removal efficiency (PRE), in the megasonic cleaning process, controllable unsteady cavitation oscillation is required. Unsteady controlled cavitation oscillations is provided an acoustic wave transmission power in the time interval τ ₁ is less than the internal strength ratio P _1, provided acoustic power was greater than the internal strength τ ₂ P _2, repeat the above steps in the time interval until the wafer is cleaned Clean, where the power P ₂ is equal to 0 or much less than the power P ₁ , τ ₁ is the time interval for the temperature in the bubble to rise above the critical implosion temperature, and τ ₂ is the temperature within the bubble to fall far below the critical implosion The temperature interval. Since the controllable unsteady cavitation oscillation has a certain bubble implosion during the cleaning process, the controllable unsteady cavitation oscillation will provide higher PRE (particle removal efficiency). There is no damage to the patterned structure. The critical implosion temperature is the lowest temperature inside the bubble, which will cause the first bubble to implode. In order to further increase the PRE, it is necessary to further increase the temperature of the bubbles, so a longer time τ _{1 is required} . Increase the bubble temperature by shortening the time τ ₂ . The frequency of supersonic waves is another parameter that controls the intensity of implosion. Generally, the higher the frequency, the lower the intensity of the implosion.

The present invention also proposes a method to achieve non-damaging cleaning of the patterned structure on the wafer by maintaining a controllable unsteady air cavity oscillation when cleaning the wafer using ultrasonic/megasonic waves. Unsteady controlled cavitation oscillations is provided an acoustic wave transmission power in the time interval τ ₁ is less than the frequency f _1, is provided at the acoustic power is greater than the time interval τ ₂ to frequency F _2, repeating the above steps until the wafer is cleaned Clean, where f _{2 is} much greater than f ₁ , preferably 2 or 4 times of f ₁ , τ ₁ is the time interval for the temperature in the bubble to rise above the critical implosion temperature, and τ ₂ is the temperature drop in the bubble Time interval well below the critical implosion temperature. Controllable unsteady cavitation oscillation will provide higher PRE (particle removal efficiency) without damage to the patterned structure. The critical implosion temperature is the lowest temperature inside the bubble, which will cause the first bubble to implode. In order to further increase the PRE, it is necessary to further increase the temperature of the bubbles, so a longer time τ _{1 is required} . Increase the bubble temperature by shortening the time τ ₂ . The frequency of supersonic waves is another parameter that controls the intensity of implosion. Generally, the higher the frequency, the lower the intensity of the implosion.

In summary, the present invention proposes a method for cleaning a substrate without damaging the patterned structure on the substrate using an ultra/megasonic device, which includes: spraying liquid into the gap between the substrate and the ultra/megasonic device ; Set the frequency of the super/megasonic power supply to f ₁ and the power to P ₁ to drive the super/megasonic device; after the bubble implosion produces micro jets and the micro jets produced by the bubble implosion damage the patterned structure on the substrate Previously, set the frequency of the ultra/megasonic power supply to f ₂ and the power to P ₂ to drive the ultra/megasonic device; after the temperature in the bubble cools to the set temperature, set the frequency of the ultra/megasonic power supply to f _{1 again} , The power is P ₁ ; repeat the above steps until the substrate is cleaned.

In one embodiment, the present invention provides a device for cleaning a substrate using an ultra/megasonic device, which includes a chuck, an ultra/megasonic device, at least one nozzle, an ultra/megasonic power supply, and a controller. The chuck supports the substrate. The ultra/megasonic device is placed near the substrate. At least one spray head sprays chemical liquid onto the substrate and into the gap between the substrate and the ultra/megasonic device. The controller sets the frequency of the super/megasonic power supply to f ₁ and the power to P ₁ to drive the super/megasonic device; after the bubble implosion produces micro jets and the micro jets produced by the bubble implosion damage the patterning on the substrate Before the structure, set the frequency of the ultra/megasonic power supply to f ₂ and the power to P ₂ to drive the ultra/megasonic device; after the temperature in the bubble cools to the set temperature, set the frequency of the ultra/megasonic power supply to f _{1 again} , The power is P ₁ ; repeat the above steps until the substrate is cleaned.

In another embodiment, the present invention provides a device for cleaning a substrate using an ultra/megasonic device, which includes a box, a solution tank, an ultra/megasonic device, at least one inlet, an ultra/megasonic power supply, and a controller. The box supports at least one substrate. The solution tank contains the box. The ultra/megasonic device is arranged on the outer wall of the solution tank. At least one inlet fills the solution tank with chemical liquid to immerse the substrate. The controller sets the frequency of the super/megasonic power supply to f ₁ and the power to P ₁ to drive the super/megasonic device; after the bubble implosion produces micro jets and the micro jets produced by the bubble implosion damage the patterning on the substrate Before the structure, set the frequency of the ultra/megasonic power supply to f ₂ and the power to P ₂ to drive the ultra/megasonic device; after the temperature in the bubble cools to the set temperature, set the frequency of the ultra/megasonic power supply to f _{1 again} , The power is P ₁ ; repeat the above steps until the substrate is cleaned.

In another embodiment, the present invention provides a device for cleaning a substrate using an ultra/megasonic device, including a chuck, an ultra/megasonic device, a spray head, an ultra/megasonic power supply, and a controller. The chuck supports the substrate. A super/megasonic device with a spray head is placed near the substrate, and the spray head sprays chemical liquid onto the substrate. The controller sets the frequency of the super/megasonic power supply to f ₁ and the power to P ₁ to drive the super/megasonic device; after the bubble implosion produces micro jets and the micro jets produced by the bubble implosion damage the patterning on the substrate Before the structure, set the frequency of the ultra/megasonic power supply to f ₂ and the power to P ₂ to drive the ultra/megasonic device; after the temperature in the bubble cools to the set temperature, set the frequency of the ultra/megasonic power supply to f _{1 again} , The power is P ₁ ; repeat the above steps until the substrate is cleaned.

The embodiments disclosed in FIGS. 8 to 19 are all applicable to the embodiment disclosed in FIG. 21.

Generally speaking, ultrasonic/megasonic waves with a frequency range of 0.1MHZ-10MHZ can be applied to the method proposed by the present invention.

Although the present invention uses specific embodiments, examples, and applications It is noted that obvious changes and replacements in this field will still fall into the protection scope of the present invention.

1003‧‧‧Ultrasonic/Megasonic Device

1004‧‧‧Piezoelectric sensor

1008‧‧‧Acoustic Resonator

1010‧‧‧wafer

1012‧‧‧Nozzle

1014‧‧‧wafer chuck

1016‧‧‧Rotating drive device

1032‧‧‧Deionized water

Claims (64)

A method for cleaning a substrate without damaging a patterned structure on the substrate using a super/megasonic device, which is characterized in that it comprises: spraying liquid into the gap between the substrate and the super/megasonic device; The frequency of the megasonic power supply is f ₁ , and the power is P ₁ to drive the super/megasonic device; after the bubble implosion generates micro-jets and before the micro-jets generated by bubble implosion damage the patterned structure on the substrate, Set the frequency of the ultra/megasonic power supply to f ₂ and the power to P ₂ to drive the ultra/megasonic device; after the temperature in the bubble cools to the set temperature, set the frequency of the ultra/megasonic power supply again Is f ₁ and the power is P ₁ ; repeat the above steps until the substrate is cleaned. The method according to a request, wherein, under controlled through the temperature below the temperature T _n T _d (control time △ τ) to the burst control in the bubble implosion strength cause damage patterned structure , Where T _n is the highest bubble temperature value obtained after the super/megasonic wave continuously acts on the bubble for n cycles, and T _d is the temperature at which a certain amount of bubble implosion accumulates, and the accumulated amount of bubble implosion has a patterned structure The high intensity (energy) of the damage. The method according to claim 1, characterized in that the frequency of the super/megasonic power supply is set to f ₁ and the power is P ₁ and the frequency of the super/megasonic power supply is set to f ₂ and the power is P ₂ the time interval between the frequency f is less than 2000 times of ₁ cycle of the waveform. The method according to claim 1, characterized in that the frequency of the super/megasonic power supply is set to f ₁ and the power is P ₁ and the frequency of the super/megasonic power supply is set to f ₂ and the power is P ₂ The time interval between is less than ((T _i -T ₀ -△T)/(△T-δT)+1)/f ₁ , where T _i is the temperature of gas and steam inside the bubble when the bubble imploses, T ₀ is the temperature of the liquid, ΔT is the temperature increase after the bubble once compressed, and δT is the temperature decrease after the bubble expands once. The method according to claim 1, wherein the set temperature is close to the temperature of the liquid. The method according to claim 1, characterized in that the value of the power P ₂ is set to zero. The method according to claim ₁ , wherein the frequency f ₁ is equal to the frequency f ₂ , and the power P _{2 is} less than the power P ₁ . The method according to claim ₁ , wherein the frequency f _{1 is} higher than the frequency f ₂ , and the power P _{2 is} smaller than the power P ₁ . The method according to claim ₁ , wherein the frequency f _{1 is} less than the frequency f ₂ , and the power P ₁ is equal to the power P ₂ . The method according to claim ₁ , wherein the frequency f _{1 is} less than the frequency f ₂ , and the power P _{1 is} greater than the power P ₂ . The method according to claim ₁ , wherein the frequency f _{1 is} smaller than the frequency f ₂ , and the power P _{1 is} smaller than the power P ₂ . The method according to claim 1, wherein the output power P _{1 of} the super/megasonic power source has a gradually increasing amplitude. The method according to claim 1, wherein the output power P _{1 of} the super/megasonic power source has a gradually decreasing amplitude. The method according to claim 1, wherein the output power P _{1 of} the super/megasonic power source has an amplitude that first increases and then decreases. The method according to claim 1, wherein the output power P _{1 of} the super/megasonic power source has an amplitude that first decreases and then increases. The method according to claim 1, characterized in that the frequency of the output power P _{1 of} the super/megasonic power source is f _{1 first and} then f ₃ , and f _{3 is} less than f ₁ . The method according to claim 1, characterized in that the frequency of the output power P _{1 of} the super/megasonic power source is f ₃ first and then f ₁ , and f _{3 is} less than f ₁ . The method according to claim 1, characterized in that the frequency of the output power P _{1 of} the super/megasonic power source is f ₃ first, then f _{1 and} finally f ₃ , and f _{3 is} less than f ₁ . The method according to claim 1, characterized in that the frequency of the output power P _{1 of} the super/megasonic power source is first f _1, then f _{3 and} finally f ₁ , and f _{3 is} less than f ₁ . The method according to claim 1, characterized in that the frequency of the output power P _{1 of} the super/megasonic power source is f _{1 first,} then f _{3 and} finally f ₄ , f _{4 is} less than f ₃ , and f _{3 is} less than f ₁ . The method according to claim 1, characterized in that the frequency of the output power P _{1 of} the super/megasonic power source is f ₄ first, then f _{3 and} finally f ₁ , f _{4 is} less than f ₃ , and f _{3 is} less than f ₁ . The method according to claim 1, characterized in that the frequency of the output power P _{1 of} the super/megasonic power supply is f _{1 first,} then f _{4 and} finally f ₃ , f _{4 is} less than f ₃ , and f _{3 is} less than f ₁ . The method according to claim 1, characterized in that the frequency of the output power P _{1 of} the super/megasonic power source is f ₃ first, then f _{4 and} finally f ₁ , f _{4 is} less than f ₃ , and f _{3 is} less than f ₁ . The method according to claim 1, characterized in that the frequency of the output power P _{1 of} the super/megasonic power source is f ₃ first, then f _{1 and} finally f ₄ , f _{4 is} less than f ₃ , and f _{3 is} less than f ₁ . The method according to claim 1, characterized in that the frequency of the output power P _{1 of} the super/megasonic power source is f ₄ first, then f _{1 and} finally f ₃ , f _{4 is} less than f ₃ , and f _{3 is} less than f ₁ . The method according to claim 1, wherein the frequency f ₂ is 0 and the power P ₂ is a positive value. The method according to claim 1, wherein the frequency f ₂ is 0, and the power P ₂ is a negative value. The method according to a request, wherein the frequency f ₂ is equal to _1, the phase of the phase f ₂ F ₁ opposite to f. The method according to a request, wherein the frequency f ₂ is different than f _1, f ₂ opposite phase to the phase of the f _1. A device for cleaning a substrate using an ultra/megasonic device, including: a chuck supporting the substrate; an ultra/megasonic device placed near the substrate; at least one spray head spraying chemical liquid onto the substrate and the substrate and the ultra /Megasonic device; Ultra/Megasonic power supply; The controller sets the frequency of the Ultra/Megasonic power supply to f ₁ and the power to P ₁ to drive the Ultra/Megasonic device; After spraying and before the micro-jet generated by bubble implosion damages the patterned structure on the substrate, set the frequency of the super/megasonic power supply to f ₂ and the power to P ₂ to drive the super/megasonic device; After cooling down to the set temperature, set the frequency of the ultra/megasonic power supply to f ₁ and the power to P _{1 again} ; repeat the above steps until the substrate is cleaned. The apparatus 30 according to the request, wherein, through the controlled temperature below the temperature T _n T _d (control time △ τ) to the burst control in the bubble will cause an implosion under the intensity pattern of structural damage , Where T _n is the highest bubble temperature value obtained after the super/megasonic wave continuously acts on the bubble for n cycles, and T _d is the temperature at which a certain amount of bubble implosion accumulates, and the accumulated amount of bubble implosion has a patterned structure The high intensity (energy) of the damage. The device according to claim 30, characterized in that the frequency of the super/megasonic power supply is set to f ₁ and the power is P ₁ and the frequency of the super/megasonic power supply is set to f ₂ and the power is P ₂ the time interval between the frequency f is less than 2000 times of ₁ cycle of the waveform. The device according to claim 30, characterized in that the frequency of the super/megasonic power supply is set to f ₁ and the power is P ₁ and the frequency of the super/megasonic power supply is set to f ₂ and the power is P ₂ The time interval between is less than ((T _i -T ₀ -△T)/(△T-δT)+1)/f ₁ , where T _i is the temperature of gas and steam inside the bubble when the bubble imploses, T ₀ is the temperature of the liquid, ΔT is the temperature increase after the bubble once compressed, and δT is the temperature decrease after the bubble expands once. The device according to claim 30, wherein the set temperature is close to the temperature of the liquid. The device according to claim 30, wherein the value of the power P ₂ is zero. The apparatus according to claim 30, wherein the frequency f ₁ is equal to the frequency f ₂ , and the power P _{2 is} less than the power P ₁ . The apparatus according to claim 30, wherein the frequency f _{1 is} higher than the frequency f ₂ , and the power P _{2 is} smaller than the power P ₁ . The apparatus according to claim 30, wherein the frequency f _{1 is} less than the frequency f ₂ , and the power P ₁ is equal to the power P ₂ . The apparatus according to claim 30, wherein the frequency f _{1 is} less than the frequency f ₂ , and the power P _{1 is} greater than the power P ₂ . The device according to claim 30, wherein the frequency f _{1 is} smaller than the frequency f ₂ , and the power P _{1 is} smaller than the power P ₂ . The device according to claim 30, wherein the output power P _{1 of} the super/megasonic power source has a gradually increasing amplitude. The apparatus according to claim 30, wherein the output power P _{1 of} the super/megasonic power source has a gradually decreasing amplitude. The device according to claim 30, wherein the output power P _{1 of} the super/megasonic power source has an amplitude that first increases and then decreases. The device according to claim 30, wherein the output power P _{1 of} the super/megasonic power source has an amplitude that first decreases and then increases. The device according to claim 30, wherein the frequency of the output power P _{1 of} the super/megasonic power source is f _{1 first and} then f ₃ , and f _{3 is} less than f ₁ . The device according to claim 30, wherein the frequency of the output power P _{1 of} the super/megasonic power source is f ₃ first and then f ₁ , and f _{3 is} less than f ₁ . The device according to claim 30, wherein the frequency of the output power P _{1 of} the super/megasonic power supply is f ₃ first, then f _{1 and} finally f ₃ , and f _{3 is} less than f ₁ . The device according to claim 30, wherein the frequency of the output power P _{1 of} the super/megasonic power supply is f _{1 first,} then f _{3 and} finally f ₁ , and f _{3 is} less than f ₁ . The device according to claim 30, characterized in that, the frequency of the output power P _{1 of} the super/megasonic power source is f _{1 first,} then f _{3 and} finally f ₄ , f _{4 is} less than f ₃ , and f _{3 is} less than f ₁ . The device according to claim 30, wherein the frequency of the output power P _{1 of} the super/megasonic power supply is f ₄ first, then f _{3 and} finally f ₁ , f _{4 is} smaller than f ₃ , and f _{3 is} smaller than f ₁ . The device according to claim 30, wherein the frequency of the output power P _{1 of} the super/megasonic power supply is f _{1 first,} then f _{4 and} finally f ₃ , f _{4 is} less than f ₃ , and f _{3 is} less than f ₁ . The device according to claim 30, wherein the frequency of the output power P _{1 of} the super/megasonic power source is f ₃ first, then f _{4 and} finally f ₁ , f _{4 is} less than f ₃ , and f _{3 is} less than f ₁ . The device according to claim 30, wherein the frequency of the output power P _{1 of} the super/megasonic power source is f ₃ first, then f _{1 and} finally f ₄ , f _{4 is} smaller than f ₃ , and f _{3 is} smaller than f ₁ . The device according to claim 30, wherein the frequency of the output power P _{1 of} the super/megasonic power source is f ₄ first, then f _{1 and} finally f ₃ , f _{4 is} less than f ₃ , and f _{3 is} less than f ₁ . The device according to claim 30, wherein the frequency f ₂ is 0, and the power P ₂ is a positive value. The device according to claim 30, wherein the frequency f ₂ is 0, and the power P ₂ is a negative value. The apparatus of claim 30 requests, wherein said frequency f ₂ is equal to _1, the phase of the phase f ₂ F ₁ opposite to f. The apparatus of claim 30 requests, wherein said frequency f ₂ is different than f _1, f ₂ phases with a phase opposite to f _1. A device for cleaning a substrate using an ultra/megasonic device, comprising: a box supporting at least one substrate; a solution tank containing the box; an ultra/megasonic device arranged on the outer wall of the solution tank; The solution tank is filled with chemical liquid to immerse the substrate; the ultra/megasonic power supply; the controller sets the frequency of the ultra/megasonic power to f ₁ and the power to P ₁ to drive the ultra/megasonic device; After the implosion produces the micro-jet and before the micro-jet generated by the bubble implosion damages the patterned structure on the substrate, the frequency of the super/megasonic power supply is set to f ₂ and the power is P ₂ to drive the super/megasonic device ; After the temperature in the bubble cools to the set temperature, set the frequency of the super/megasonic power supply to f ₁ and the power to P _{1 again} ; repeat the above steps until the substrate is cleaned. The apparatus 59 according to the request, wherein, through the controlled temperature below the temperature T _n T _d (control time △ τ) to the burst control in the bubble will cause an implosion under the intensity pattern of structural damage , Where T _n is the highest bubble temperature value obtained after the super/megasonic wave continuously acts on the bubble for n cycles, and T _d is the temperature at which a certain amount of bubble implosion accumulates, and the accumulated amount of bubble implosion has a patterned structure The high intensity (energy) of the damage. The device according to claim 59, wherein the power P ₂ is zero. A device for cleaning a substrate using a super/mega sonic device, including a chuck supporting the substrate; a super/mega sonic device with a nozzle placed near the substrate, the nozzle spraying chemical liquid on the substrate; Megasonic power supply; the controller sets the frequency of the ultra/megasonic power supply to f ₁ and the power to P ₁ to drive the ultra/megasonic device; micro-jet damage after the bubble implosion produces micro-jet Before patterning the structure on the substrate, set the frequency of the ultra/megasonic power supply to f ₂ and the power to P ₂ to drive the ultra/megasonic device; after the temperature in the bubble cools to the set temperature, set the ultra/megasonic wave again. The frequency of the megasonic power supply is f ₁ and the power is P ₁ ; repeat the above steps until the substrate is cleaned. The apparatus 62 according to the request, wherein, through the controlled temperature below the temperature T _n T _d (control time △ τ) to the burst control in the bubble will cause an implosion under the intensity pattern of structural damage , Where T _n is the highest bubble temperature value obtained after the super/megasonic wave continuously acts on the bubble for n cycles, and T _d is the temperature at which a certain amount of bubble implosion accumulates, and the accumulated amount of bubble implosion has a patterned structure The high intensity (energy) of the damage. The device according to claim 62, wherein the power P ₂ is zero.

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