TWI681449B - Polishing method and polishing apparatus - Google Patents

Abstract

The invention relates to a polishing method and a polishing device for performing chemical treatment of a substrate in a stage before and during polishing of a substrate such as a semiconductor wafer.

In the polishing method of pressing the substrate to be polished against the polishing surface on the polishing table and polishing the substrate, when a plurality of polishing tables are used to perform the polishing process of the substrate in multiple stages, there is a chemical liquid washing processing step, which is in the multiple stages In the polishing process, a chemical liquid is used to wash the processed substrate.

Description

Grinding method and grinding device

The present invention relates to a polishing method and a polishing device, in particular to a polishing method and a polishing device that perform chemical treatment of a substrate before and during polishing of a substrate such as a semiconductor wafer.

In recent years, circuit wiring has become increasingly finer as semiconductor devices have become more integrated and denser, and the number of layers of multilayer wiring has also increased. In order to achieve circuit miniaturization and realize multilayer wiring, the step difference is larger due to the unevenness of the surface of the lower layer. Therefore, as the number of wiring layers increases, the film coverage of the step shape when forming a thin film (step coverage: step coverage Sex) becomes worse. Therefore, in order to perform multilayer wiring, it is necessary to improve the step coverage and perform a flattening process in an appropriate process. In addition, since the depth of focus becomes shallower as the photolithography becomes finer, it is necessary to planarize the surface of the semiconductor device so that the unevenness of the surface of the semiconductor device becomes less than the depth of focus.

Therefore, in the manufacturing process of semiconductor devices, the planarization technology of the surface of semiconductor devices is becoming more and more important. The most important technique in this planarization technique is chemical mechanical polishing (CMP (Chemical Mechanical Polishing)). This chemical mechanical polishing system uses a polishing device to supply a polishing liquid (Slurry: slurry) containing polishing particles such as silicon dioxide (SiO ₂ ) or ceria (CeO ₂ ) to a polishing pad while sliding a substrate such as a semiconductor wafer The person who is in contact with the polishing pad on the polishing table performs polishing.

The polishing device polishes the semiconductor wafer (substrate) by the above CMP process, and after polishing, the wafer is washed in a washing machine. Most wafers are polished using two or more polishing tables for multi-stage polishing such as two-stage polishing or three-stage polishing. In this case, the wafer is also washed in the washing machine after the last stage of polishing.

【Prior Technical Literature】 【Patent Literature】

[Patent Document 1] Japanese Patent Laid-Open No. 1-18228

[Patent Document 2] Japanese Patent Laid-Open No. 2004-87760

[Patent Document 3] Japanese Patent Laid-Open No. 2005-277396

[Patent Document 4] Japanese Patent No. 3560051

The above-mentioned past polishing method and polishing device have the problems listed below.

(1) Before polishing, a natural oxide film is formed on the film surface on the wafer. When the natural oxide film is removed at the beginning of polishing, the polishing rate is low, and the polishing process takes time to reduce the overall processing amount. In addition, during the copper (Cu) film polishing, uneven polishing occurs when the natural oxide film on the wafer surface is removed, so there is a problem that the result of in-plane uniformity is affected.

(2) When foreign substances are attached to the wafer before polishing, the foreign substances cause scratches on the wafer.

(3) After the first stage of polishing, carry out the During the second-stage polishing, scratches and defects (defects) are generated on the wafer due to the effects of abrasive particles and the chemical changes between the slurry (from alkaline to acidic and from acidic to alkaline).

(4) After the second-stage polishing, when the third-stage polishing or buffing process is performed with the slurry abrasive particles and components attached to the wafer, due to the influence of the abrasive particles and due to the chemical changes between the slurry (from (Alkaline becomes acidic, from acidic to alkaline), and scratches, contamination, and reaction products are generated on the wafer.

(5) After the completion of all polishing processes, if the slurry abrasive particles and components attached to the wafer are not completely removed, the cleaning process will contaminate the cleaning parts, resulting in a reduction in cleaning capacity and a reduction in the life of the cleaning parts. In addition, it takes processing time to perform effective washing in the washing unit, so that throughput is affected.

In view of the above circumstances, the present invention aims to provide a polishing process or a cleaning process that can prevent foreign objects adhering to the previous polishing process from being carried into the second stage when a plurality of polishing tables are used to perform multiple polishing processes on the substrate (wafer) Grinding method and grinding device.

In order to achieve the above object, the polishing method of the present invention presses the substrate to be polished against the polishing surface on the polishing table and polishes the substrate. It is characterized in that when a plurality of polishing tables are used to perform a plurality of stages of polishing treatment on the substrate, The chemical liquid washing process step is to use the chemical liquid to wash and process the substrate in the foregoing plural stages of polishing processing.

A suitable feature of the present invention is that before performing the above-mentioned multiple-stage polishing process, a pre-grinding chemical solution processing step is provided, which uses a chemical solution to process the substrate.

The suitable aspect of the present invention is characterized in that after all the grinding processes in the foregoing plural stages are completed, and before being washed by a washing machine, a pre-washing chemical liquid washing step is provided, which uses medicine Liquid to wash and process the substrate.

The suitable aspect of the present invention is characterized in that: the aforementioned chemical liquid washing processing step, the aforementioned pre-grinding chemical liquid processing step and the aforementioned pre-cleaning chemical liquid washing step are at least one position on or above the plurality of grinding tables The position below the oscillating movement path of the top ring, or the position where the substrate is loaded and unloaded from the top ring turntable, or the position on the transfer path from the polishing unit to the cleaning unit is implemented.

The characteristics of the present invention are suitable for: the step of washing the chemical solution at the position of the grinding table, the position below the swinging movement path of the upper annular turntable, and the position of loading and unloading the substrate from the upper annular turntable, the grinding The pre-chemical liquid treatment step and the aforementioned pre-cleaning chemical liquid washing step are carried out by immersing the substrate held by the upper circular turntable in the chemical liquid, or by spraying the chemical liquid from the nozzle to the upper part The substrate held by the circular turntable is implemented by sliding the sponge or abrasive cloth in contact with the substrate held by the upper circular turntable.

The feature of the present invention is that the swing range is set in such a way that the swing ranges of a plurality of upper circular turntables overlap, and a washing unit or a chemical solution is provided below the position where the swing movement paths of the upper circular turntable overlap The processing unit can perform the cleaning process of the substrate or the chemical solution process of the substrate held on more than one upper circular turntable by the aforementioned one cleaning unit or one chemical solution processing unit to perform the cleaning process before and after polishing At least one of the steps and the chemical liquid treatment step.

A suitable aspect of the present invention is characterized in that the pre-cleaning chemical solution cleaning step performed at a position on the conveying path from the polishing unit to the cleaning unit rotates the substrate by holding the peripheral edge of the substrate. Simultaneously by spraying the chemical solution from the nozzle, or by holding the substrate The peripheral portion rotates the substrate while rubbing the cleaning member.

A suitable aspect of the present invention is characterized in that the chemical solution is washed in a state where the substrate is tilted by a tilt mechanism.

A suitable aspect of the present invention is characterized in that the aforementioned nozzle is composed of a swingable nozzle or a two-fluid spray nozzle.

A suitable aspect of the present invention is characterized in that the pre-cleaning chemical liquid washing step performed at a position on the conveying path conveyed from the polishing unit to the cleaning unit is by immersing the substrate in the chemical liquid in an inclined state To implement.

The polishing device of the present invention holds the substrate to be polished by the upper circular turntable, presses the substrate against the polishing surface on the polishing table and polishes, and is characterized by having a plurality of polishing tables, which implement a plurality of stages on the substrate In the polishing process, at least one of the aforementioned plurality of polishing stations is used as a dedicated station for cleaning the chemical solution, and is used for cleaning the substrate with the chemical solution.

The feature of the present invention is that the special stage for cleaning the chemical liquid is used for the cleaning process of the substrate using the chemical liquid in the polishing process of the plural stages.

A suitable aspect of the present invention is characterized in that the substrate is held by the upper circular turntable, and the substrate chemical cleaning process is performed on the special platform for chemical cleaning.

A suitable aspect of the present invention is characterized in that: the above-mentioned special platform for cleaning and processing the chemical liquid has at least one recess or groove for holding the chemical liquid, and the substrate held by the upper circular turntable is dipped and held in the recess or groove The liquid medicine is washed in the liquid medicine.

The suitable aspect of the present invention is characterized in that: there are a plurality of the tanks on the special platform for cleaning and processing the chemical liquid, and the multiple tanks can respectively hold different chemical liquids, or can hold at least one chemical liquid respectively With DIW (deionized water: deionized water).

The suitable aspect of the present invention is characterized in that: the above-mentioned special platform for cleaning and treatment of the chemical solution can be immersed in the plurality of tanks of the chemical solution or DIW in the plurality of tanks sequentially by repeatedly rotating and stopping the substrate held by the upper circular turntable in.

A suitable aspect of the present invention is characterized in that the above-mentioned upper ring-shaped turntable has: an upper ring-shaped turntable body with a membrane holding a substrate; and a retainer ring fixed to the upper ring-shaped turntable body, and It is arranged in such a way as to surround the outer periphery of the substrate; the buckle has a groove under the buckle, which is arranged at a distance from each other in order to allow the chemical solution to flow under the substrate, and the upper ring-shaped turntable body has a medicine for discharging the medicine flowing under the substrate The port of the liquid is provided in the groove below the retaining ring, and the number of grooves away from the port portion is set to be greater than the number of grooves near the port portion.

A suitable aspect of the present invention is characterized in that a temporary table provided at a position on the conveying path from the polishing unit to the cleaning unit is provided with a cleaning mechanism, which cleans the substrate after polishing by the chemical solution, and the foregoing cleaning mechanism includes : Rotating mechanism, which keeps the outer periphery of the substrate to rotate; tilting mechanism, which tilts the rotating mechanism; and nozzle, which is arranged above the substrate tilted by the tilting mechanism and sprays on the substrate Liquid medicine.

A suitable aspect of the present invention is characterized in that the aforementioned nozzle is composed of a swingable nozzle or a two-fluid spray nozzle.

A suitable aspect of the present invention is characterized by a cleaning mechanism provided on the outside of the plurality of polishing tables to clean the polished substrate with incoming chemical liquid; the cleaning mechanism includes: a tilting mechanism that holds the substrate and It is tilted; an immersion mechanism, which immerses the substrate in the chemical solution while the substrate is tilted; and a chemical solution supply section, which supplies the chemical solution to the substrate disposed above the inclined substrate.

The present invention achieves the effects listed below.

(1) By surely removing the abrasive grains and components attached to the wafer (substrate) after the first-stage polishing, no scratches or defects (defects) are generated on the wafer during the second-stage polishing.

(2) By surely removing the abrasive grains and components attached to the wafer (substrate) after the second-stage polishing, no scratches or defects will be generated on the wafer during the third-stage polishing or polishing process.

(3) By performing the process for removing the natural oxide film in the stage before the main polishing, the wafer processing capacity (WPH: Wafers Per Hour) can be improved. In addition, by performing oxide film removal in advance, accurate in-plane uniformity evaluation can be performed.

(4) By performing a cleaning process for the purpose of removing foreign materials adhering to the wafer surface (substrate surface) before the main polishing, no scratches are generated on the wafer.

(5) After the polishing is completed, the wafer cleaning (substrate cleaning) is carried out at the last stage to reduce the contamination of the cleaning parts during the cleaning process. In addition, by performing initial washing, the washing time of the washing unit can be shortened.

1‧‧‧Rack

1a, 1b‧‧‧ partition

2‧‧‧ Loading/Unloading Department

3‧‧‧Grinding Department

3A‧‧‧First grinding unit

3B‧‧‧Second grinding unit

3C‧‧‧The third grinding unit

3D‧‧‧4th grinding unit

4‧‧‧ Washing Department

5‧‧‧Control Department

6‧‧‧First linear conveyor

7‧‧‧Second linear conveyor

10‧‧‧Grinding pad

11‧‧‧Lift

12‧‧‧swing conveyor

13‧‧‧set ring

14‧‧‧ring guide

14a, 16a‧‧‧inclined surface

15‧‧‧drug supply nozzle

16, 17‧‧‧Guide

18‧‧‧Base

19‧‧‧Dip slot

19-1‧‧‧First Dip Slot

19-2‧‧‧Second Dip Slot

19-3‧‧‧third dip slot

20‧‧‧Front loading department

21‧‧‧Moving mechanism

22‧‧‧Transport robot

23‧‧‧drug discharge nozzle

30A, 30B, 30C, 30D

31A, 31B, 31C, 31D

32‧‧‧Upper ring turntable body

32A, 32B, 32C, 32D

32P‧‧‧Exhaust port

33‧‧‧buckle

33A, 33B, 33C, 33D

33g‧‧‧Fixed ring groove

34‧‧‧ Diaphragm

34A, 34B, 34C, 34D ‧‧‧ atomizer

35‧‧‧ pressure chamber

36‧‧‧Upper ring turntable shaft

41‧‧‧Barrel processing tank

42、44、46‧‧‧Supply piping

43‧‧‧Rainwater tubular treatment tank

43g‧‧‧Guide

45, 67, 72, 75, 79‧‧‧ nozzle

47, 49, 51‧‧‧ washing nozzle

48、50‧‧‧Body

48h‧‧‧ nozzle hole

52、87‧‧‧sponge

52a‧‧‧Liquid supply path

53‧‧‧Roll

54, 62, 68, 73, 76, 80, 84, 86 ‧‧‧ liquid supply section

60‧‧‧Upper ring turntable head

61, 71, 78, 82

65‧‧‧Roller type rotating mechanism

66‧‧‧spindle

70‧‧‧Chuck

78p‧‧‧Drain

83‧‧‧Dual fluid jet nozzle

85‧‧‧Slotted nozzle

180, 203‧‧‧ temporary station

190‧‧‧First washing room

191‧‧‧ First Transfer Room

192‧‧‧Second washing room

193‧‧‧Second transfer room

194‧‧‧ drying room

201A‧‧‧Upper side cleaning module

201B‧‧‧Lower side cleaning module

202A‧‧‧Upper secondary cleaning module

202B‧‧‧Lower secondary cleaning module

205A‧‧‧Upper drying module

205B‧‧‧Lower drying module

207‧‧‧Filter fan unit

209‧‧‧ First transport robot

210‧‧‧Second Transport Robot

211, 212‧‧‧ support shaft

TP1‧‧‧First transport position

TP2‧‧‧Second conveying position

TP3‧‧‧third transfer position

TP4‧‧‧ Fourth transport position

TP5‧‧‧Fifth transport position

TP6‧‧‧The sixth transport position

TP7‧‧‧The seventh transport position

W‧‧‧ Wafer

The first figure is a plan view showing the overall configuration of a polishing apparatus according to an embodiment of the present invention.

The second figure is a perspective view schematically showing the first grinding unit.

The third (a) and third (b) diagrams are detailed views of the washing section shown in the first diagram, the third (a) diagram is a top view, and the third (b) diagram is a side view.

FIG. 4A is a flowchart showing an example of the wafer processing steps performed by the polishing apparatus configured as shown in the first to third drawings.

FIG. 4B is a flowchart showing an example of a wafer processing step performed by the polishing apparatus configured as shown in the first to third drawings.

FIG. 5A is a flowchart showing another example of the wafer processing steps performed by the polishing apparatus configured as shown in the first to third drawings.

Fig. 5B is a flowchart showing another example of the wafer processing steps performed by the polishing apparatus configured as shown in the first to third figures.

The sixth (a) to sixth (f) diagrams are schematic diagrams showing an example of a process of performing chemical treatment of wafers on a stage.

Figures 7(a) to 7(f) are schematic diagrams showing other examples of the process of chemical treatment of wafers on the stage.

The eighth (a) to eighth (f) diagrams are schematic diagrams showing still other examples of the process of performing chemical treatment of wafers on the stage.

The ninth (a) to ninth (f) diagrams are schematic diagrams showing still other examples of the process of performing chemical treatment of wafers on the stage.

Figures 10(a) and 10(b) are diagrams showing the configuration of the upper circular turntable suitable for the chemical treatment of wafers on the stage. Figure 10(a) is a longitudinal sectional view of the upper circular turntable The tenth (b) picture is a top view of the retaining ring provided on the upper circular turntable.

The eleventh (a), eleventh (b), and eleventh (c) diagrams are schematic diagrams showing the chemical solution processing of wafers at positions other than the stage position and the wafer loading and unloading position.

The twelfth (a) and twelfth (b) diagrams are diagrams showing a state in which a cleaning nozzle for cleaning the chemical liquid is provided between the linear conveyor and the table, and the twelfth (a) diagram is a plan view. Figure 12 (b) is the XII arrow view of Figure 12 (a). The twelfth (c) picture is displayed below the swinging movement path of the upper circular turntable. It is a plan view of an example of a wafer that is held on an adjacent upper circular turntable by a cleaning unit.

The thirteenth (a) and thirteenth (b) diagrams are diagrams showing cleaning nozzles for cleaning liquid chemicals on a linear conveyor functioning as a wafer loading and unloading position. The thirteenth ( a) The top view of the graph, and the thirteenth (b) graph is the XIII arrow view of the thirteenth (a) graph.

Figures 14(a) and 14(b) are diagrams showing the state of the sponge for cleaning the chemical liquid between the linear conveyor and the table. Figure 14(a) is a plan view and 10th. The four (b) diagram is the XII arrow view of the fourteenth (a) diagram, and the fourteenth (c) diagram is a pattern diagram showing the sponge for cleaning the chemical solution on the stage.

Figure 15 (a), Figure 15 (b), and Figure 15 (c) are schematic diagrams showing an example of a configuration for performing chemical treatment of wafers at the position of the temporary table.

Figure 16 (a), Figure 16 (b), and Figure 16 (c) are schematic diagrams showing other examples of the configuration of chemical treatment of wafers at the temporary table position.

Figure 17 (a), Figure 17 (b), and Figure 17 (c) are schematic diagrams showing yet another example of the configuration for performing chemical treatment of wafers at the position of the temporary table.

Hereinafter, embodiments of the polishing method and polishing apparatus of the present invention will be described in detail with reference to the drawings. The same symbols are marked on the same or equivalent components, and repeated explanations are omitted.

The first figure is a plan view showing the overall configuration of a polishing apparatus according to an embodiment of the present invention. As shown in the first figure, the polishing apparatus is provided with a roughly rectangular housing 1. The interior of the housing 1 is divided into a loading/unloading portion 2, a polishing portion 3, and a washing portion 4 by partition walls 1a, 1b . These loading/unloading section 2, grinding section 3, and washing section 4 are independently assembled and independently exhausted. In addition, the polishing apparatus includes a control unit 5 that controls wafer processing operations.

The loading/unloading unit 2 includes a front loading unit 20 that loads two or more (four in this embodiment) of substrate cassettes storing many wafers (substrates). These front loading portions 20 are arranged adjacent to the frame 1 and are arranged along the width direction of the polishing device (direction perpendicular to the longitudinal direction). The front loading unit 20 may be equipped with an open cassette, a SMIF (Standard Manufacturing Interface) box, or a FOUP (Front Opening Unified Pod). Here, SMIF and FOUP are sealed containers that house wafer cassettes inside and are covered with partition walls, which can maintain an environment independent of the external space.

Also, in the loading/unloading section 2, a travel mechanism 21 is laid along one side of the front loading section 20, and a transport robot (loader) that can move in the array direction of the wafer cassettes is provided on the travel mechanism 21 twenty two. The transport robot 22 can access the wafer cassette mounted on the front loading section 20 by moving on the traveling mechanism 21. The transport robot 22 has two arms at the top and bottom. The upper arm is used when the processed wafer returns to the wafer cassette. The lower arm is used when removing the pre-processed wafer from the wafer cassette. The upper and lower arms can be used separately. . Furthermore, the lower arm of the transfer robot 22 is configured to reverse the wafer by rotating around its axis.

Since the loading/unloading section 2 needs to maintain the cleanest area, the inside of the loading/unloading section 2 always maintains a higher pressure than any of the outside of the polishing device, the polishing section 3, and the washing section 4. The polishing section 3 uses the slurry as the polishing liquid, so it is the dirtiest area. Therefore, a negative pressure is formed inside the polishing section 3, and a pressure lower than the internal pressure of the cleaning section 4 is maintained. The loading/unloading section 2 is provided with a filter fan having a clean air filter such as a high efficiency filter (HEPA Filter: High Efficiency Particulate Air Filter), an ultra high efficiency filter (ULPA Filter: Ultra Low Penetration Air Filter), or a chemical filter Unit (not shown), from this filter fan unit, blow clean air to remove particles, toxic vapors or toxic gases at any time.

The polishing section 3 is a region where wafer polishing (flattening) is performed, and includes a first polishing unit 3A, a second polishing unit 3B, a third polishing unit 3C, and a fourth polishing unit 3D. The first polishing unit 3A, the second polishing unit 3B, the third polishing unit 3C, and the fourth polishing unit 3D are arranged along the longitudinal direction of the polishing device as shown in the first figure.

As shown in the first figure, the first polishing unit 3A includes: a polishing table 30A equipped with a polishing pad 10 having a polishing surface; and a polishing pad 10 for holding a wafer and pressing the wafer against the polishing table 30A for simultaneous polishing The upper annular turntable 31A; the polishing liquid supply nozzle 32A for supplying polishing liquid or dressing liquid (for example, pure water) on the polishing pad 10; the dresser 33A for dressing the polishing surface of the polishing pad 10; and the liquid ( For example, the mixed fluid or liquid (for example, pure water) of a gas (for example, pure water) and a gas (for example, nitrogen) forms a mist and is sprayed on the atomizer 34A on the grinding surface.

Similarly, the second polishing unit 3B includes: a polishing table 30B on which the polishing pad 10 is installed, an upper annular turntable 31B, a polishing liquid supply nozzle 32B, a dresser 33B, and an atomizer 34B; and the third polishing unit 3C includes: The polishing table 30C of the polishing pad 10, the upper circular turntable 31C, the polishing liquid supply nozzle 32C, the dresser 33C, and the atomizer 34C; the fourth polishing unit 3D includes: a polishing table 30D on which the polishing pad 10 is installed, and an upper circular turntable 31D , The polishing liquid supply nozzle 32D, the dresser 33D, and the atomizer 34D.

Since the first polishing unit 3A, the second polishing unit 3B, the third polishing unit 3C, and the fourth polishing unit 3D have the same configuration, the first polishing unit 31A will be described below.

The second figure is a perspective view schematically showing the first grinding unit 3A. The upper ring turntable 31A is supported by the upper ring turntable shaft 36. A polishing pad 10 is attached to the upper surface of the polishing table 30A, and the upper surface of the polishing pad 10 constitutes a polishing surface for polishing the wafer W. In addition, fixed abrasive particles can also be used instead of polishing Pad 10. As indicated by the arrow, the upper circular turntable 31A and the polishing table 30A are configured to rotate around their axes. The wafer W is held under the upper circular turntable 31A by vacuum suction. During polishing, the polishing liquid is supplied from the polishing liquid supply nozzle 32A to the polishing surface of the polishing pad 10, and the wafer W to be polished is pressed against the polishing surface by the upper ring turntable 31A to polish.

Next, the transfer mechanism for transferring wafers will be described. As shown in the first figure, the first linear conveyor 6 is disposed adjacent to the first polishing unit 3A and the second polishing unit 3B. The first linear conveyor 6 is arranged at four transfer positions along the direction in which the polishing units 3A and 3B are arranged (sequentially from the loading/unloading section side are the first transfer position TP1, the second transfer position TP2, and the third A mechanism for transferring wafers between the transfer position TP3 and the fourth transfer position TP4).

In addition, a second linear conveyor 7 is arranged adjacent to the third polishing unit 3C and the fourth polishing unit 3D. The second linear conveyor 7 is provided at three transfer positions along the direction in which the polishing units 3C and 3D are arranged (sequentially from the loading/unloading section side to the fifth transfer position TP5, the sixth transfer position TP6, and the seventh transfer position TP7) The mechanism for transferring wafers.

The wafer is transferred to the polishing units 3A and 3B by the first linear conveyor 6. The upper circular turntable 31A of the first grinding unit 3A moves between the grinding position and the second transport position TP2 by the swinging action of the upper circular turntable head 60. Therefore, wafer transfer is performed to the upper circular turntable 31A at the second transfer position TP2. Similarly, the upper circular turntable 31B of the second grinding unit 3B moves between the grinding position and the third transport position TP3 by the swinging action of the upper circular turntable head 60, and crystallizes the upper circular turntable 31B at the third transport position TP3 Round handover. The upper circular turntable 31C of the third grinding unit 3C moves between the grinding position and the sixth transport position TP6 by the swinging action of the upper circular turntable head 60, and wafer transfer is performed to the upper circular turntable 31C at the sixth transport position TP6 . The upper circular turntable 31D of the fourth grinding unit 3D is driven by the upper circular turntable head 60 The rocking motion moves between the polishing position and the seventh transfer position TP7, and wafer transfer is performed to the upper circular turntable 31D at the seventh transfer position TP7.

At the first transfer position TP1, a lifter 11 for receiving wafers from the transfer robot 22 is arranged. The wafer is transferred from the transfer robot 22 to the first linear conveyor 6 via the elevator 11. Between the elevator 11 and the transfer robot 22, a shutter (not shown) is provided in the partition wall 1a. When the wafer is transferred, the shutter is opened, and the wafer can be transferred from the transfer robot 22 to the elevator 11. In addition, a swing conveyor 12 is arranged between the first linear conveyor 6, the second linear conveyor 7 and the washing unit 4. The swing conveyor 12 has an arm movable between a fourth transfer position TP4 and a fifth transfer position TP5, and the wafer is transferred from the first linear conveyor 6 to the second linear conveyor 7 by the swing conveyor 12 get on. The wafer is transferred to the third polishing unit 3C and/or the fourth polishing unit 3D by the second linear conveyor 7. In addition, the wafer polished by the polishing section 3 is transported to the cleaning section 4 via the swing conveyor 12.

On the side of the swing conveyor 12, a wafer W temporary stage 180 provided on a frame (not shown) is arranged. As shown in the first figure, the temporary table 180 is disposed adjacent to the first linear conveyor 6 and is located between the first linear conveyor 6 and the washing section 4.

The third (a) and third (b) diagrams are detailed views of the washing unit 4 shown in the first diagram, the third (a) diagram is a plan view, and the third (b) diagram is a side view. As shown in FIGS. 3(a) and 3(b), the washing unit 4 is divided into: a first washing room 190, a first transfer room 191, a second washing room 192, a second transfer room 193, And drying room 194. In the first washing chamber 190, an upper primary washing module 201A and a lower primary washing module 201B are arranged in the longitudinal direction. The upper primary washing module 201A is disposed above the lower primary washing module 201B. Similarly, in the second washing chamber 192, an upper secondary washing module 202A and a lower secondary washing module 202B are arranged in the longitudinal direction. Upper side secondary wash The cleaning module 202A is arranged above the lower secondary cleaning module 202B. The primary and secondary cleaning modules 201A, 201B, 202A, and 202B are cleaning machines that use a cleaning solution to clean wafers. Since these primary and secondary cleaning modules 201A, 201B, 202A, 202B are arranged along the vertical direction, the advantage of small occupied area can be obtained.

A temporary wafer stand 203 is provided between the upper secondary cleaning module 202A and the lower secondary cleaning module 202B. In the drying chamber 194, an upper drying module 205A and a lower drying module 205B are arranged in the longitudinal direction. These upper drying module 205A and lower drying module 205B are isolated from each other. Filter fan units 207 and 207 that supply clean air to the drying modules 205A and 205B are provided above the upper drying module 205A and the lower drying module 205B, respectively. Upper primary washing module 201A, lower primary washing module 201B, upper secondary washing module 202A, lower secondary washing module 202B, temporary stand 203, upper drying module 205A, and lower drying The module 205B is fixed to a frame (not shown) via bolts or the like.

A first transfer robot 209 that can move up and down is arranged in the first transfer chamber 191, and a second transfer robot 210 that can move up and down is arranged in the second transfer chamber 193. The first transport robot 209 and the second transport robot 210 are movably supported by support shafts 211 and 212 extending in the longitudinal direction, respectively. The first transport robot 209 and the second transport robot 210 have driving mechanisms such as motors inside, and can move up and down along the support shafts 211 and 212. Like the transport robot 22, the first transport robot 209 has arms in two stages, upper and lower. As indicated by the broken line in the third (a) diagram, the lower arm of the first transport robot 209 is arranged at a position accessible by the temporary table 180. When the lower arm of the first transport robot 209 accesses the temporary table 180, the shielding door (not shown) provided in the partition wall 1b is opened.

The first transfer robot 209 cleans the module once on the temporary table 180 and on the upper side 201A, the lower primary cleaning module 201B, the temporary table 203, the upper secondary cleaning module 202A, and the lower secondary cleaning module 202B move to transfer the wafer W. When transferring the wafer before cleaning (wafer to which the slurry is attached), the first transfer robot 209 uses the lower arm, and when transferring the cleaned wafer, the upper arm is used. The second transport robot 210 moves between the upper secondary cleaning module 202A, the lower secondary cleaning module 202B, the temporary table 203, the upper drying module 205A, and the lower drying module 205B to transport the wafer W. Since the second transfer robot 210 only transfers cleaned wafers, it has only one arm. The transfer robot 22 shown in the first figure uses its upper arm to take out the wafer from the upper drying module 205A or the lower drying module 205B, and returns its wafer to the wafer cassette. When the upper arm of the transport robot 22 accesses the drying modules 205A and 205B, the shield door (not shown) provided in the partition wall 1a is opened.

Since the cleaning unit 4 is provided with two primary cleaning modules and two secondary cleaning modules, it is possible to form a plurality of cleaning lines in which a plurality of wafers are juxtaposed and cleaned. The so-called "cleaning line" is a movement path when one wafer is cleaned by a plurality of cleaning modules inside the cleaning unit 4. For example, the first transport robot 209, the upper primary cleaning module 201A, the first transport robot 209, the upper secondary cleaning module 202A, the second transport robot 210, and then the upper drying module 205A may be transported in this order The wafers are arranged in parallel with the first transport robot 209, the lower primary cleaning module 201B, the first transport robot 209, the lower secondary cleaning module 202B, the second transport robot 210, and then the lower drying mold Group 205B transfers other wafers in sequence. In this way, with two parallel cleaning lines, multiple (typically 2) wafers can be washed and dried at approximately the same time.

In addition, in the two parallel cleaning lines, a specified time difference can also be set to wash and dry a plurality of wafers. The advantages of washing at a specified time difference are as follows. The first transport robot 209 and the second transport robot 210 are used by a plurality of washing lines. Therefore, when a plurality of washing or drying treatment At the same time, these transfer robots are unable to transfer wafers immediately, resulting in deterioration of production volume. In order to avoid such problems, by washing and drying a plurality of wafers with a specified time difference, the processed wafers can be quickly transferred by the transfer robots 209 and 210.

Slurry is attached to the polished wafer, and the wafer should not be left unattended in this state for a long time. For this reason, copper as a wiring metal will be corroded by the slurry. When this cleaning section 4 is used, since two primary cleaning modules are provided, even if the previous wafer is cleaned by either the upper primary cleaning module 201A or the lower primary cleaning module 201B, It can still be cleaned by moving wafers into the one-time cleaning module of the other party. Therefore, not only high throughput can be achieved, but also copper corrosion caused by the immediately cleaned and polished wafers can be prevented.

In addition, when only one washing is required, the first transport robot 209, the upper primary cleaning module 201A, the first transport robot 209, the temporary table 203, the second transport robot 210, and then the upper drying module 205A can be transported in this order For the wafer, the second cleaning in the second cleaning chamber 192 can be omitted. Furthermore, when the lower secondary cleaning module 202B fails, the wafer can be transferred to the upper secondary cleaning module 202A. In this way, the first transfer robot 209 and the second transfer robot 210 can distribute wafers to a designated cleaning line as needed. The selection of such a washing line is determined by the control unit 5.

Next, the wafer processing steps performed by the polishing apparatus configured as shown in the first to third drawings will be described with reference to the fourth A, fourth B, fifth A, and fifth B drawings. In the following description, in the polishing tables 30A, 30B, 30C, and 30D shown in the first figure, the polishing process may not be performed, but only the chemical treatment process or the cleaning process may be performed. Therefore, it is simply referred to as the tables 30A, 30B, 30C, 30D.

FIGS. 4A and 4B are flowcharts showing an example of the wafer processing steps performed by the polishing apparatus configured as shown in FIGS. 1 to 3. As shown in Figure 4A, start wafer processing, The wafers taken out of the wafer cassette of the front loading unit 20 are transferred (moved) to the first polishing unit 3A by the transfer mechanism (step S1). The wafer transferred to the first polishing unit 3A is held under the upper circular turntable 31A by vacuum suction (step S2). The wafer held by the upper circular turntable 31A is processed by any of the following three processes.

(1) The first processing step

The upper circular carousel 31A holding the wafer moves from the position of the first linear conveyor 6 to the position of the stage 30A (step S3-1), the upper circular carousel 31A descends (step S3-2), and the wafer is aligned on the stage 30A The circle is subjected to chemical liquid grinding (step S3-3A) or Dip (dipping) treatment (step S3-3B). After the processing, the upper ring carousel rises (step S3-4), and the upper ring carousel 31A moves from the position of the table 30A to the position of the first linear conveyor 6 (step S3-5).

(2) Second processing step

The upper circular turntable 31A holding the wafer moves from the position of the first linear conveyor 6 to the processing position (step S3-1). The processing position is a position other than the table position and the wafer loading and unloading position (described later). The wafer is washed at the processing position (step S3-2A) or Dip processing (step S3-2B), and after processing, the upper circular turntable 31A moves from the processing position to the position of the first linear conveyor 6 (step S3- 3).

(3) The third processing step

The wafer held by the upper circular turntable 31A is washed (step S3-1A) or Dip processing (step S3-1B) at the wafer loading and unloading position.

The wafer that has completed any of the first to third processing steps above is detached from the upper circular turntable 31A (step S4). Thereafter, the wafer is transferred (moved) from the first polishing unit 3A to the second polishing unit 3B by the transfer mechanism (step S5). In the second polishing unit 3B, the wafer It is vacuum-sucked and held under the upper circular turntable 31B (step S6). The upper circular carousel 31B holding the wafer moves from the position of the first linear conveyor 6 to the position of the stage 30B (step S7), and the upper circular carousel 31B descends (step S8). The wafer held by the upper circular turntable 31B is pressed against the polishing pad 10 on the stage 30B to perform the first-stage polishing (step S9). After the first stage of grinding is completed, the upper ring carousel 31B rises (step S10), and thereafter, the upper ring carousel 31B moves from the processing position to the position of the first linear conveyor 6 (step S11). At the position of the first linear conveyor 6, the wafer is separated from the upper circular turntable 31B (step S12). Next, the wafer is transferred (moved) from the second polishing unit 3B to the third polishing unit 3C by the transfer mechanism (step S13).

As shown in FIG. 4B, the wafer transferred to the third polishing unit 3C is held under the upper circular turntable 31C by vacuum suction (step S14). The upper circular carousel 31C holding the wafer moves from the position of the second linear conveyor 7 to the position of the stage 30C (step S15), and the upper circular carousel 31C descends (step S16). The wafer held by the upper circular turntable 31C is pressed against the polishing pad 10 on the table 30C to perform the second-stage polishing (step S17). After the second stage of grinding is completed, the upper circular turntable 31C rises (step S18), and thereafter, the upper circular turntable 31C moves from the processing position to the position of the second linear conveyor 7 (step S19). At the position of the second linear conveyor 7, the wafer is separated from the upper circular turntable 31C (step S20). Next, the wafer is transferred (moved) from the third polishing unit 3C to the fourth polishing unit 3D by the transfer mechanism (step S21).

As shown in FIG. 4B, the wafer transferred to the fourth polishing unit 3D is held under the upper circular turntable 31D by vacuum suction (step S22). The upper circular carousel 31D holding the wafer moves from the position of the second linear conveyor 7 to the position of the stage 30D (step S23), and the upper circular carousel 31D descends (step S24). The wafer held by the upper circular turntable 31D is subjected to the third stage polishing (step S25A) or polishing process (step S25B) on the stage 30D. After processing, the upper ring The carousel rises (step S26), and the upper ring carousel 31D moves from the processing position to the position of the second linear conveyor 7 (step S27). At the position of the second linear conveyor 7, the wafer is separated from the upper circular turntable 31D (step S28). The polished wafer detached from the upper circular turntable 31D is transferred from the fourth polishing unit 3D to the washing machine (step S29). Thereafter, the wafer is cleaned by a plurality of cleaning modules 201A, 201B, 202A, and 202B (step S30). The cleaned wafer is transported (moved) by the transport mechanism and returned to the wafer cassette of the front loading unit 20 (step S31). In this way, the wafer processing is completed.

Figures 5A and 5B are flowcharts showing other examples of wafer processing steps performed by the polishing apparatus configured as shown in the first to third figures. As shown in FIG. 5A, wafer processing is started, and the wafer taken out from the wafer cassette of the front loading unit 20 is transferred (moved) to the first polishing unit 3A by the transfer mechanism (step S1). The wafer transferred to the first polishing unit 3A is held under the upper circular turntable 31A by vacuum suction (step S2). The upper circular turntable 31A holding the wafer moves to the position of the stage 30A (step S3), and the upper circular turntable 31A descends (step S4). The wafer is polished on the stage 30A using acidic slurry (step S5A) or alkaline slurry (step S5B). The polished wafer is water polished (step S6). In water polishing, the DIW is supplied to the polishing pad 10, and the wafer is in sliding contact with the polishing pad 10 to clean the wafer. Since the attachment on the wafer does not need to be completely removed, the cleaning time can be shortened. Thereafter, the upper circular carousel 31A rises (step S7), and the upper circular carousel 31A moves to the position of the first linear conveyor 6 (step S8). At the position of the first linear conveyor 6, the wafer is detached from the upper circular turntable 31A (step S9). Next, the wafer is transferred (moved) from the first polishing unit 3A to the second polishing unit 3B by the transfer mechanism (step S10).

As shown in FIG. 5A, the wafer transferred (moved) to the second polishing unit 3B is held under the upper circular turntable 31B by vacuum suction (step S11). By turning round The wafer held by the tray 31B is processed by any of the following three processes.

(1) The first processing step

The upper circular carousel 31B holding the wafer moves from the position of the first linear conveyor 6 to the position of the stage 30B (step S12-1), the upper circular carousel 31B descends (step S12-2), and the upper circular carousel 31B The held wafer is washed on the stage 30B using the chemical solution and DIW (step S12-3). After washing, the upper circular carousel 31B rises (step S12-4), and the upper circular carousel 31B moves from the position of the table 30B to the position of the first linear conveyor 6 (step S12-5).

(2) Second processing step

The upper circular turntable 31B holding the wafer moves from the position of the first linear conveyor 6 to the processing position (step S12-1). The processing position is a position other than the table position and the wafer loading and unloading position (described later). The chemical solution and DIW are used to clean the wafer at the processing position (step S12-2). After the processing, the upper circular carousel 31B moves from the processing position to the position of the first linear conveyor 6 (step S12-3).

(3) The third processing step

The wafer held by the upper circular turntable 31B is cleaned using a chemical solution and DIW at the wafer loading and unloading position (step S12-1).

After completion of any of the first to third processing steps, the wafer is detached from the upper circular turntable 31B (step S13). Thereafter, the wafer is transferred (moved) from the second polishing unit 3B to the third polishing unit 3C by the transfer mechanism (step S14).

As shown in FIG. 5B, the wafer transferred to the third polishing unit 3C is held under the upper circular turntable 31C by vacuum suction (step S15). The upper circular turntable 31C holding the wafer moves to the processing position (step S16), and the upper circular turntable 31C descends (step S17). Wafer grinding on the stage 30C using alkaline slurry (step S18A) or using acid slurry (step S18B). After grinding, the upper circular carousel 31C rises (step S19), and the upper circular carousel 31C moves to the position of the second linear conveyor 7 (step S20). At the position of the second linear conveyor 7, the wafer is separated from the upper circular turntable 31C (step S21). The polished wafer detached from the upper circular turntable 31C is transferred from the third polishing unit 3C to the washing machine (step S22). Thereafter, the wafers are cleaned by a plurality of cleaning modules 201A, 201B, 202A, and 202B (step S23). The cleaned wafer is transported (moved) by the transport mechanism and returned to the wafer cassette of the front loading section 20 (step S24). In this way, the wafer processing is completed.

Figures 6(a) to 6(f) are schematic diagrams showing an example of a chemical treatment process of wafers on a stage. The steps shown in Figures 6(a) to 6(f) for wafer chemical solution processing are applicable to the Dip processing of the first processing step in Figure 4A (step S3-3B). In the following description, the table system will describe the case of the table 30A of the first polishing unit 3A, but other tables 30B, 30C, and 30D may be used.

The sixth (a) diagram is a schematic cross-sectional view of a platform for chemical liquid treatment. As shown in the sixth (a) diagram, the stage 30A is fixed by the stage fixing ring 13. The ring guide 14 is attached to the outside of the table 30A, and the polishing pad 10 is spread on the top of the table 30A and the ring guide 14. The upper surface of the ring-shaped guide 14 is an inclined surface 14a, and the inclined surface 14a is inclined obliquely upward when going from the radially inner side toward the outer side. The right part in the sixth (a) figure shows the ring guide 14 as a perspective view. In the state where the ring guide 14 is installed outside the table 30A, the inner diameter portion of the ring guide 14 is equal to the height of the table 30A, and the outer peripheral portion of the ring guide 14 is higher than the table 30A. Therefore, when the chemical liquid is supplied from the chemical liquid supply nozzle 15 on the upper surface of the polishing pad 10, since the outer peripheral portion of the ring-shaped guide 14 is high, the chemical liquid can be held on the surface of the polishing pad. The chemical liquid Dip is performed by immersing the wafer W held by the upper circular turntable 31A in the held chemical liquid portion.

Figure 6(b) ~ Figure 6(f) show the platform using the structure shown in Figure 6(a) 30A is a process diagram when chemical treatment is performed. As shown in the sixth (b) diagram, the chemical liquid is supplied onto the polishing pad 10 from the chemical liquid supply nozzle 15. When the recessed portion of the polishing pad 10 is filled with the chemical solution by the chemical solution supply nozzle 15, as shown in the sixth (c) diagram, the upper circular turntable 31A that has adsorbed the wafer W is moved to the processing position . Next, as shown in the sixth (d) diagram, the upper circular turntable 31A is lowered, and the wafer W is immersed (Dip) in the chemical solution. At this time, the table 30A and the upper ring turntable 31A are not rotated. The wafer W is attracted by the upper circular turntable 31A, and the wafer W is processed while floating from the polishing pad 10. After the chemical treatment is completed, as shown in the sixth (e) diagram, the upper circular turntable 31A is raised, and the wafer W is moved to the wafer loading and unloading position, and the wafer after the chemical treatment is detached from the upper circular turntable 31A And transported to the next process. After raising the upper ring turntable 31A, as shown in the sixth (f) diagram, the table 30A is rotated, and the chemical liquid filled on the polishing pad is discharged out of the table through the inclined surface of the outer peripheral portion of the polishing pad 10 by centrifugal force. In the next wafer processing, the rotation of the stage 30A is stopped, and the chemical liquid processing shown in the sixth (b) to sixth (f) diagrams is similarly performed.

The seventh (a) to seventh (f) diagrams are schematic diagrams showing other examples of the chemical liquid treatment process of wafers on the stage. The process of performing chemical liquid treatment on the wafers shown in the seventh (a) to seventh (f) figures is applicable to the Dip process of the first processing step of the fourth A figure (step S3-3B).

The seventh (a) diagram is a schematic cross-sectional view of a platform for chemical liquid treatment. As shown in the seventh (a) diagram, a guide 16 composed of a circular plate having an H-shaped cross section is mounted on the table 30A. At this time, the guide 16 covers the surface of the stage 30A. The upper surface of the outer periphery of the guide 16 is an inclined surface 16a, and the inclined surface 16a is inclined obliquely upward when going from the radially inner side toward the outer side. A guide 16 is shown as a perspective view on the right part in the seventh (a) figure. When the chemical liquid is supplied from the chemical liquid supply nozzle 15 on the upper surface of the guide 16, the chemical liquid can be held. The chemical liquid Dip is performed by immersing the wafer W held by the upper circular turntable 31A in the held chemical liquid portion.

The seventh (b) to seventh (f) diagrams are process diagrams when the chemical treatment is performed using the stage 30A of the configuration shown in the seventh (a) diagram. As shown in the seventh (b) diagram, the chemical liquid is supplied onto the guide 16 from the chemical liquid supply nozzle 15. When the concave portion of the guide 16 is filled with the chemical liquid by the chemical liquid supply nozzle 15, as shown in the seventh (c) diagram, the upper circular turntable 31A that has adsorbed the wafer W is moved to the process position. Next, as shown in the seventh (d) diagram, the upper circular turntable 31A is lowered, and the wafer is immersed (Dip) in the chemical solution. At this time, the table 30A and the upper ring turntable 31A are not rotated. The wafer W is sucked by the upper circular turntable 31A, and the wafer W is processed while floating from the upper surface of the guide 16. After the chemical treatment is completed, as shown in the seventh (e) diagram, the upper circular turntable 31A is raised, and the wafer W is moved to the wafer loading and unloading position, and the wafer after the chemical treatment is detached from the upper circular turntable 31A And transported to the next process. After raising the upper ring turntable 31A, as shown in the seventh (f) diagram, the stage 30A is rotated, and the chemical liquid filled on the guide 16 is discharged out of the stage through the inclined surface 16a by centrifugal force. In the next wafer processing, the rotation of the stage 30A is stopped, and the chemical liquid processing shown in the seventh (b) to seventh (f) diagrams is similarly performed.

The eighth (a) to eighth (f) diagrams are schematic diagrams showing still other examples of the chemical liquid treatment process of wafers on the stage. The processes of the wafers shown in the eighth (a) to eighth (f) wafers for chemical liquid treatment are applicable to the Dip processing of the first processing step of the fourth A graph (step S3-3B).

The eighth (a) figure is a schematic cross-sectional view of a stage for chemical liquid treatment. As shown in the eighth (a) diagram, a guide 17 composed of a circular plate having an H-shaped cross section is mounted on the table 30A. At this time, the guide 17 covers the surface of the table 30A. The right part in the eighth (a) figure is shown with a guide 17 as a perspective view. When the chemical liquid is supplied from the chemical liquid supply nozzle 15 on the upper surface of the guide 17, the chemical liquid can be held. The chemical liquid Dip is performed by immersing the wafer W held by the upper circular turntable 31A in the held chemical liquid portion.

Figure 8(b) ~ Figure 8(f) show the platform using the structure shown in Figure 8(a) 30A is a process diagram when chemical treatment is performed. As shown in the eighth (b) diagram, the chemical liquid is supplied from the chemical liquid supply nozzle 15 to the guide 17. When the concave portion of the guide 17 is filled with the chemical liquid by the chemical liquid supply nozzle 15, as shown in the eighth (c) diagram, the upper circular turntable 31A that has adsorbed the wafer W is moved to processing position. Next, as shown in the eighth (d) diagram, the upper circular turntable 31A is lowered, and the wafer is immersed (Dip) in the chemical solution. At this time, the table 30A and the upper ring turntable 31A are not rotated. The wafer W is attracted by the upper circular turntable 31A, and the wafer W is processed while floating from the upper surface of the guide 17. After the chemical treatment is completed, as shown in the eighth (e) diagram, the upper circular turntable 31A is raised, and the wafer W is moved to the wafer loading and unloading position, and the wafer after the chemical treatment is detached from the upper circular turntable 31A And transported to the next process. After raising the upper ring turntable 31A, as shown in the eighth (f) diagram, the chemical liquid supply nozzle 15 is lowered, and the chemical liquid supply nozzle 15 is used to suck the chemical liquid filled on the guide 17 by a pump or the like and to the stage. Outside discharge. The following wafers are similarly processed with the chemical solutions shown in Figures 8(b) to 8(f).

The ninth (a) to ninth (f) diagrams are schematic diagrams showing still other examples of the chemical liquid treatment process of wafers on the stage. The process of performing chemical treatment on the wafers shown in Figure 9(a) to Figure 9(f) is applicable to the cleaning process by chemical solution and DIW in the first process of Figure 5A (step S12- 3).

The ninth (a) diagram is a schematic cross-sectional view of a platform for chemical liquid treatment. As shown in the ninth (a) diagram, a disk-shaped base 18 is fixed to the table 30B, and a plurality of cylindrical container-shaped Dip grooves 19 are provided on the base 18. In the following, when it is necessary to make a distinction between a plurality of Dip slots, the words 1, 2, and 3 will be used for explanation. As shown in the ninth (b) diagram, in the present embodiment, three Dip grooves composed of a first Dip groove 19-1, a second Dip groove 19-2, and a third Dip groove 19-3 are provided. In addition, the illustrated example shows a Dip tank in the shape of a cylindrical container, but it can also be divided into two or more Dip tanks by division. Will rotate in a circle from above When the wafer held by the tray 31B is immersed in the Dip slot 19, the stage 30B is rotated and the angle of the stage 30B is positioned by the positioning mechanism, and then the upper circular turntable 31B is lowered, and any one of a plurality of Dip slots can be selected.

The ninth (b) to ninth (f) diagrams are process diagrams when the liquid chemical treatment is carried out using the stage shown in the ninth (a) diagram. As shown in the ninth (b) diagram, the first chemical liquid is supplied from the chemical liquid supply nozzle 15 to the first dip tank 19-1. After the first dip tank 19-1 is filled with the chemical liquid by the chemical liquid supply nozzle 15, as shown in the ninth (c) diagram, the upper circular turntable 31B that has adsorbed the wafer W is moved to The processing position, and the stage 30B is rotated (120 degrees) at the position where the first chemical solution is processed. Next, as shown in the ninth (d) diagram, the upper circular turntable 31B is lowered, and the wafer is immersed (Dip) in the first chemical solution in the first Dip tank 19-1. At this time, the table 30B and the upper ring turntable 31B are not rotated. The wafer W is in a state of being attracted by the upper circular turntable 31B, and the wafer W is processed in a state of floating from the bottom surface of the dip tank. At this time, the DIW is supplied from the chemical solution supply nozzle 15 in the second Dip tank 19-2. After the treatment of the chemical solution is completed, as shown in the ninth (e) diagram, the upper circular turntable 31B is raised, the table 30B is rotated (120 degrees), and the second dip tank 19-2 is moved to the processing position. Next, as shown in the ninth (f) diagram, the upper circular turntable 31B is lowered, and the wafer is immersed in the DIW in the second dip tank 19-2, while rotating the upper circular turntable 31B around its own axis. Wafer cleaning. In addition, the first Dip tank 19-1 lowers the chemical liquid discharge nozzle 23 to discharge the first chemical liquid in the first Dip tank 19-1. In addition, the second chemical liquid is supplied from the chemical liquid supply nozzle 15 in the third dip tank 19-3. After that, the upper circular turntable 31B is temporarily raised, and the table 30B is rotated (120 degrees) to the position where the second chemical solution is processed. Thereafter, the upper circular turntable 31B is lowered, and the wafer is immersed (Dip) in the second chemical solution.

Figures 10(a) and 10(b) are diagrams showing the configuration of the upper circular turntable suitable for the chemical treatment of wafers on the stage. Figure 10(a) is a longitudinal sectional view of the upper circular turntable. First Figure 10(b) is a top view of the retaining ring provided on the upper circular turntable. Use the upper circular turntable shown in Figure 10(a) and Figure 10(b) to process the chemical solution of the wafer, which is suitable for cleaning with the chemical solution and DIW in the first processing step of Figure 5A Processing (step S12-3).

As shown in the tenth (a) diagram, the upper ring turntable 31B includes a substantially disc-shaped upper ring turntable body 32, and a buckle 33 is fixed below the outer peripheral portion of the upper ring turntable body 32. A diaphragm 34 is laid at a position radially inward of the retaining ring 33 and below the upper ring turntable body 32, and a pressure chamber 35 is formed between the diaphragm 34 and the upper ring turntable body 32.

As shown in the tenth (b) figure, a plurality of grooves 33g are formed under the buckle 33. As shown in FIG. 10 (a), the upper annular turntable body 32 is provided with a discharge port 32P communicating with the space between the inner peripheral surface of the upper annular turntable body 32 and the outer peripheral surface of the diaphragm 34. The discharge port 32P is connected to a vacuum source (Vac). As shown in the tenth (b) figure, the buckle grooves 33g are not arranged at equal intervals, but are distributed at a portion close to the discharge port 32P and densely arranged at a portion far from the discharge port 32P.

When the chemical treatment of the wafer is performed by the upper circular turntable 31B configured as shown in the tenth (a) and tenth (b) diagrams, the pressure chamber 35 is negatively pressured, and the diaphragm 34 is raised. The wafer is lifted from the table, and the surface of the wafer is easily exposed to the chemical liquid. A plurality of buckle grooves 33g are provided below the buckle 33. The buckle grooves 33g are not arranged at equal intervals, but are densely arranged at a portion away from the discharge port 32P. Therefore, the chemical liquid flows in efficiently from the plurality of retaining grooves 33g formed in the portion away from the discharge port 32P and contacts the surface of the wafer, while being sucked from the discharge port 32P toward the discharge port 32P by negative pressure (see arrow) , And quickly discharged from the discharge port 32P located on the side where the number of buckle grooves 33g is small. In this way, the inflow of the chemical solution to the wafer surface and the discharge of the chemical solution after the treatment can be promoted, and the etching effect can be improved.

The eleventh (a), eleventh (b), eleventh (c) diagrams are displayed on the table and Schematic diagram showing the structure of wafer chemical treatment at a position other than the wafer loading and unloading position. The positions other than the stage position and the wafer loading and unloading position are, for example, positions below the moving path of the upper circular turntable performing the swinging operation. The configurations shown in Figure 11 (a), Figure 11 (b), and Figure 11 (c) are suitable for cleaning in the second processing step of Figure 4 (step S3-2A) or Dip Processing (step S3-2B) and washing in the second processing step of the fifth figure A (step S12-2). Figures 11 (a), 11 (b), and 11 (c) show the second processing step applicable to Figure 4A.

The eleventh (a) is a perspective view showing a state in which a barrel-shaped processing tank 41 for cleaning chemical liquid is provided. As shown in the eleventh (a), a supply pipe 42 is connected to the bottom surface of the barrel-shaped processing tank 41, and the mixing ratio (dilution rate) and flow rate can be freely changed from the bottom surface of the barrel-shaped processing tank 41 through the supply pipeline 42. The mixed liquid of DIW and DIW. In addition, the liquid medicine with adjustable flow rate and DIW can also be supplied in different systems. As shown in the eleventh (a), in a state where the barrel-shaped processing tank 41 is filled with the mixed liquid of the chemical liquid and the DIW, the upper circular turntable 31A is lowered, by dipping the wafer in the drug In the mixed solution of liquid and DIW, the liquid medicine can be washed.

The eleventh (b) is a perspective view showing a state in which the rainwater tubular treatment tank 43 for cleaning the chemical liquid is provided. As shown in FIG. 11 (b), the rainwater tubular treatment tank 43 is arranged to be inclined downward, and the guides 43g, 43g of the treatment tank 43 are formed upright by bending both ends of the flat plate. A supply pipe 44 is arranged at one end of the rainwater tubular treatment tank 43, and the supply pipe 44 can supply the mixture of the chemical liquid and the DIW that can freely change the mixing ratio (dilution ratio) and flow rate to the treatment tank 43. In addition, the liquid medicine and DIW with adjustable flow rates can be supplied in different systems. The mixed liquid of the chemical liquid and DIW supplied to one end side of the rainwater tubular treatment tank 43 may flow to the other end side along the inclined surface of the rainwater tubular treatment tank 43. As shown in the eleventh (b), in a state where the mixed liquid of the chemical liquid and DIW flows into the rainwater tubular treatment tank 43, the wafer is dipped by lowering the upper ring turntable 31A (Dip) In the mixed liquid of chemical liquid and DIW, the chemical liquid can be washed.

The eleventh (c) view is a perspective view showing a state where the nozzle 45 for cleaning the chemical liquid is provided. As shown in FIG. 11 (c), a nozzle 45 with a nozzle opening upward is provided, and a mixed liquid of the chemical liquid and DIW is supplied from the supply pipe 46 in the nozzle 45. When the upper circular turntable 31A holding the wafer is located above the nozzle 45, by spraying the mixed liquid of the chemical liquid and the DIW that freely change the mixing ratio (dilution rate) and flow rate from the nozzle 45 to the wafer, the chemical liquid can be washed deal with. In addition, different systems can be used to spray the liquid medicine and DIW with adjustable flow rates.

The twelfth (a) and twelfth (b) diagrams are diagrams showing a cleaning nozzle for cleaning the chemical liquid between the linear conveyor and the table, and the twelfth (a) diagram is a plan view. Figure 12 (b) is the XII arrow view of Figure 12 (a). The configuration shown in Figures 12(a) and 12(b) is applicable to the cleaning in the second processing step of Figure 4A (step S3-2A) and the second processing step in Figure 5A Washing in step (step S12-2). The twelfth (a) and twelfth (b) diagrams show the conditions applicable to the second processing step of the fourth A diagram. As shown in FIGS. 12(a) and 12(b), a cleaning nozzle 47 is provided between the first linear conveyor 6 and the table 30A. The cleaning nozzle 47 is formed by forming a plurality of nozzle holes 48h on the body portion 48 of the rectangular tube, and the body portion 48 extends in the horizontal direction so as to have substantially the same length as the diameter of the upper ring turntable 31A. The washing nozzle 47 is arranged below the moving path of the upper ring carousel moved by the swing action of the upper ring carousel head 60. When the upper circular carousel 31A moves between the first linear conveyor 6 and the table 30A, it can be stopped above the cleaning nozzle 47, and the mixed liquid of the chemical liquid and DIW is sprayed from the cleaning nozzle 47 during the stop to make the wafer Wash with liquid medicine. When the mixed liquid of the chemical liquid and the DIW is sprayed from the cleaning nozzle 47 toward the wafer, the upper circular turntable 31A rotates around its own axis to clean the entire wafer with the chemical liquid.

The twelfth (c) image is displayed below the swing movement path of the upper circular turntable Position, a plan view of an example of cleaning a wafer held on an adjacent upper circular turntable by a cleaning unit. The example shown in the twelfth (c) figure shows a state where a chemical liquid washing unit is provided between two adjacent stations 30A (or 30C) and 30B (or 30D), however, two adjacent There is a chemical liquid washing unit between the table and the linear conveyor. In the twelfth (c) figure, a cleaning nozzle 47 is provided as a chemical solution cleaning unit. The configuration of the cleaning nozzle 47 and the cleaning method of the cleaning nozzle 47 are as described in the description of FIG. 12(a). In addition, a chemical solution processing unit may be provided at the location of the chemical solution washing unit.

In this way, by setting the swing range in such a manner that the swing ranges of the adjacent upper circular turntables partially overlap, a washing unit or a chemical solution processing unit can be provided below the position where the swing movement paths of the upper circular turntable overlap The wafers held on more than one upper circular turntable are subjected to cleaning treatment or chemical treatment.

Figures 13 (a) and 13 (b) are diagrams showing cleaning nozzles for cleaning liquid chemicals at the position of a linear conveyor functioning as a wafer loading and unloading position. (a) The graph is a top view, and the thirteenth (b) graph is the XIII arrow view of the thirteenth (a) graph. The configurations shown in Figures 13(a) and 13(b) are applicable to the cleaning in the third processing step of Figure 4A (step S3-1A) and the third processing step in Figure 5A Washing in step (step S12-1). Figures 13(a) and 13(b) show the conditions applicable to the third process in Figure 4A. As shown in Figures 13(a) and 13(b), a cleaning nozzle 49 is provided at the position of the first linear conveyor 6. The cleaning nozzle 49 is formed by fixing a plurality of cleaning nozzles 51 on the body portion 50 of a rectangular parallelepiped, and a plurality of (two in the illustrated example) cleaning nozzles 51 are used to diffuse the mixed liquid of the chemical liquid and DIW into a fan shape The method is formed by spraying toward the wafer. The upper ring carousel 31A swings from the stage side to the linear conveyor side. When the upper ring carousel 31A stops at the linear conveyor side, the mixed liquid of the chemical liquid and DIW can be sprayed from the cleaning nozzle 51 to clean the wafer through the chemical liquid . The mixing of the chemical liquid and DIW is sprayed from the cleaning nozzle 51 toward the wafer During liquid mixing, the entire wafer can be washed with the chemical liquid by rotating the upper ring turntable 31A around its own axis.

Figures 14(a) and 14(b) are diagrams showing the state of the sponge 52 for cleaning liquid chemicals between the linear conveyor and the table. Figure 14(a) is a plan view of the Figure 14 (b) is the XIV arrow view of Figure 14 (a). The configurations shown in Figure 14(a) and Figure 14(b) are applicable to the cleaning in the second processing step of Figure 4A (step S3-2A) and the second processing step in Figure 5A Washing in step (step S12-2). The fourteenth (a) and fourteenth (b) diagrams show the conditions applicable to the second processing step of the fourth diagram A. As shown in FIG. 14(a), a sponge 52 for cleaning the chemical solution is provided between the first linear conveyor 6 and the table 30A. As shown in FIG. 14(b), the cylindrical sponge 52 can be rotated around its own axis by a plurality of rollers 53 provided on the outer periphery of the sponge 52. Thereby, the upper surface of the sponge 52 can be in sliding contact with the wafer. In addition, a liquid supply path 52a is formed in the center of the sponge 52. Below the sponge 52, a liquid supply portion 54 is arranged. The mixed liquid of the chemical liquid and the DIW is supplied to the liquid supply path 52a of the sponge 52 via the liquid supply portion 54 and is supplied to the sliding contact surface of the sponge 52 and the wafer from the upper opening of the liquid supply path 52a. Thereby, the slurry abrasive grains can be removed by the physical removal action of the sponge 52 and the washing with flowing water supplied from the center of the sponge, so as to reduce the carrying of the slurry abrasive grains to the rear stage. In addition, the sponge 52 can also be replaced with an abrasive cloth.

The fourteenth (c) image is a perspective view showing a state where the sponge 52 for cleaning the chemical liquid is provided on the table. As shown in FIG. 14(c), a sponge 52 for cleaning the chemical solution is provided on the table 30A. The configuration of the sponge 52 shown in FIG. 14(c) is the same as that shown in FIG. 14(b). When the sponge 52 is installed on the table, the slurry abrasive grains can also be removed by the physical removal action of the sponge and the running water washing with the liquid supplied from the center of the sponge, so as to reduce the carrying of the slurry abrasive grains to the rear stage.

Figure 15 (a), Figure 15 (b), and Figure 15 (c) are displayed on the temporary stand 180 A schematic diagram of a configuration example of chemical liquid processing of a wafer in progress. The configuration shown in Figure 15 (a), Figure 15 (b), and Figure 15 (c) applies to the step of washing the chemical solution before washing.

Figure 15(a) is a front view showing the state of a processing section having a tilt mechanism provided outside the table. As shown in FIG. 15(a), the processing section includes a stage 61 that supports the wafer W, and the stage 61 can be tilted by a tilt mechanism. The chemical liquid or DIW is supplied from the liquid supply part 62 to the upper end side of the inclined stage 61. In addition, a stopper and the like to prevent the wafer from slipping are provided on the lower end side of the inclined stage 61. The wafer W is processed in the following steps. After the wafer W is placed on the stage 61, the stage 61 is tilted, and a liquid such as a chemical solution or DIW flows out to the upper end side of the inclined stage 61 to perform the cleaning process of the chemical solution of the wafer. After processing, the stage 61 is returned to the level. In this way, by tilting the wafer, the liquid on the wafer can be effectively discharged. By improving the discharge of liquid, the amount of liquid retained can be reduced.

Figure 15(b) is a front view showing the state of the processing section having a rotating mechanism (roller type). As shown in FIG. 15(b), the peripheral portion of the wafer W is supported by a plurality of roller-type rotating mechanisms 65. Each roller-type rotating mechanism 65 is supported on a spindle 66. The wafer W can be rotated around its own axis in a horizontal posture by the rotation of each roller-type rotating mechanism 65. A liquid supply portion 68 having a plurality of nozzles 67 is arranged above the wafer W. The wafer W is processed in the following steps. A plurality of roller-type rotating mechanisms 65 support the outer periphery of the wafer W and rotate the wafer W, and a liquid such as a chemical solution or DIW flows out from the plurality of nozzles 67 onto the wafer W for wafer processing.

In this way, the roller-type rotating mechanism 65 can effectively discharge the liquid on the wafer. By improving the discharge of liquid, the amount of liquid retained can be reduced. By using the roller type of the rotating mechanism 65, it can be flushed to the periphery of the wafer.

The fifteenth (c) figure is a front view showing the state of the processing section having a rotating mechanism (chuck type). As shown in the fifteenth (c), the peripheral portion of the wafer W is chucked by a plurality of 70 support. Each chuck 70 is supported on a rotatable stage 71. The wafer W is held by the chuck 70 and can be rotated in a horizontal posture around its own axis by the rotation of the stage 71. The chuck 70 and the stage 71 constitute a chuck-type rotating mechanism. A liquid supply part 73 having a plurality of nozzles 72 is arranged above the wafer W. The wafer W is processed in the following steps. A plurality of chuck-type rotating mechanisms support the outer periphery of the wafer W and rotate the wafer W, and a liquid such as a chemical liquid or DIW flows out from the plurality of nozzles 72 onto the wafer W to perform wafer processing.

In this way, by using a chuck type rotation mechanism, the rotation speed (rotation speed) of the wafer is larger than that of the roller type rotation mechanism, which can expand the process margin and can also be applied to a tilt mechanism.

Figure 16 (a), Figure 16 (b), and Figure 16 (c) are schematic diagrams showing other examples of the configuration in which the chemical treatment of wafers is performed on the temporary stage 180. The configurations shown in Figure 16 (a), Figure 16 (b), and Figure 16 (c) apply to the step of washing the chemical solution before washing.

FIG. 16(a) is a front view showing a state of a processing section having a tilt mechanism that tilts the rotation mechanism in addition to the rotation mechanism (chuck type). As shown in FIG. 16(a), the peripheral portion of the wafer W is supported by a plurality of chucks 70. Each chuck 70 is supported on a rotatable stage 71. The stage 71 can be tilted by the tilt mechanism. The wafer W can be held by the chuck 70 and rotated around its own axis in an inclined posture by the rotation of the stage 71. The chuck 70 and the stage 71 constitute a chuck-type rotating mechanism. A liquid supply part 73 having a plurality of nozzles 72 is arranged above the wafer W. The wafer W is processed in the following steps. The outer periphery of the wafer W is held by a plurality of chucks 70, and the stage 71 is tilted. Then, the stage 71 is rotated to rotate the wafer W, and a liquid such as a chemical liquid or DIW flows out from the plurality of nozzles 72 onto the wafer W to perform wafer processing. In this way, the wafer is rotated by the chuck type rotating mechanism, and the wafer is tilted by the tilting mechanism, which can effectively discharge the liquid on the wafer. By further improving the discharge of liquid, the amount of liquid retained can be further reduced.

Fig. 16(b) is a front view showing a state in which a processing part having a nozzle shaking mechanism is provided in addition to a rotating mechanism (chuck type). As shown in FIG. 16(b), the peripheral portion of the wafer W is supported by a plurality of chucks 70. Each chuck 70 is supported on a rotatable stage 71. The wafer W can be held by the chuck 70 and rotated around its own axis by the rotation of the stage 71. Above the wafer W, a liquid supply part 76 having a nozzle 75 that can be rocked by a rocking mechanism is arranged. The wafer W is processed in the following steps. The wafer W is held by the plurality of chucks 70 holding the outer periphery of the wafer W, the stage 71 is rotated to rotate the wafer W, and the nozzle 75 is shaken by the shaking mechanism while the liquid such as the chemical liquid and DIW flows out from the nozzle 75 to the wafer W The wafer W is processed. When the nozzle is fixed, the position from the nozzle to the wafer is fixed. When the nozzle 75 that can be shaken is used, since the settings of the shaking range and the shaking speed of the nozzle 75 can be adjusted in each process, it is possible to design the process. degree.

Figure 16(c) is a front view showing the state of a processing section having a dipping mechanism in addition to a chuck type wafer holding mechanism and a tilt mechanism. As shown in FIG. 16(c), the peripheral portion of the wafer W is supported by a plurality of chucks 70. Each chuck 70 is supported on the stage 78. The stage 78 has an immersion mechanism for immersing the wafer, and can be tilted by the tilt mechanism. A liquid supply portion 80 having a plurality of nozzles 79 is arranged above the wafer W. The wafer W is processed in the following steps. The outer periphery of the wafer W is held by a plurality of chucks 70, and the stage 78 is tilted by the tilt mechanism. A liquid such as a chemical liquid or DIW is supplied from a plurality of nozzles 79 to the immersion mechanism of the stage 78 to immerse the wafer in the liquid. In this way, the wafer is immersed in the liquid on the stage 78. The liquid continues to flow to suppress liquid retention. After treatment, the liquid is discharged from the discharge port 78p, and the clean chemical liquid or DIW can be continuously supplied at any time.

Figures 17(a), 17(b), and 17(c) are schematic diagrams showing yet another example of the configuration for performing chemical treatment of wafers on the temporary stage 180. The configurations shown in Figure 17 (a), Figure 17 (b), and Figure 17 (c) apply to the step of washing the chemical solution before washing.

Figure 17(a) is a front view showing the state of the processing section of the swing mechanism having a two-fluid ejection nozzle in addition to the rotation mechanism (roller type). As shown in FIG. 17(a), the peripheral portion of the wafer W is supported by a plurality of roller-type rotating mechanisms 65. Each roller-type rotating mechanism 65 is supported on the stage 82. The wafer W can be rotated around its own axis in a horizontal posture by the rotation of the stage 82. Above the wafer W, a liquid supply part 84 having a two-fluid ejection nozzle 83 that can be rocked by a rocking mechanism is provided. The wafer W is processed in the following steps. A plurality of roller-type rotating mechanisms 65 support the outer periphery of the wafer W and rotate the wafer W, and a liquid such as a chemical liquid or DIW is supplied from the two-fluid ejection nozzle 83 to the wafer W to process the wafer. At this time, by shaking the two-fluid spray nozzle 83, the slurry is removed as much as possible before going to the next stage of the cleaning module. With this, it is possible to reduce the washing load of the washing module.

Figure 17(b) is a front view showing the state of a processing section having a slit nozzle capable of swinging in addition to a rotating mechanism (chuck type). As shown in FIG. 17(b), the peripheral portion of the wafer W is supported by a plurality of chucks 70. Each chuck 70 is supported on a rotatable stage 71. The wafer W can be held by the chuck 70 and rotated around its own axis in a horizontal posture by the rotation of the stage 71. Above the wafer W, a liquid supply part 86 having a slit nozzle 85 that can be shaken is arranged. The wafer W is processed in the following steps. A plurality of chucks 70 hold the outer periphery of the wafer W and rotate the wafer W, and a liquid such as a chemical liquid or DIW flows out from the oscillating slit nozzle 85 onto the wafer W to process the wafer. The entire surface of the wafer can be rinsed by swinging the slit nozzle 85. Because the entire surface of the wafer can be wetted, the discharge effect of the slurry is improved. Without shaking the slit nozzle, it is only necessary to make the length of the slit nozzle reach the length of the radius of the wafer. In addition, when the wafer is not rotated, it is only necessary to make the length of the slit nozzle reach the length of the diameter portion of the wafer.

Figure 17(c) shows that in addition to the rotating mechanism (roller type), Front view of scrubbing the treatment part of the sponge for cleaning. As shown in FIG. 17(c), the peripheral portion of the wafer W is supported by a plurality of roller-type rotating mechanisms 65. Each roller-type rotating mechanism 65 is supported on the stage 71. The wafer W can be rotated around its own axis in a horizontal posture by the rotation of the stage 71. Above the wafer W, a disc-shaped sponge 87 for friction cleaning is arranged. The wafer W is processed in the following steps. A plurality of roller-type rotating mechanisms 65 support the outer periphery of the wafer W and rotate the wafer W, and a liquid such as a chemical liquid or DIW is supplied to the wafer W by friction cleaning the sponge 87 to carry out the crystal Wash with round friction. In this way, by rubbing and cleaning with a sponge, the slurry can be removed as much as possible before going to the cleaning module. With this, it is possible to reduce the washing load of the washing module.

As shown in Figure 15 (a), Figure 15 (b), Figure 15 (c) to Figure 17 (a), Figure 17 (b), Figure 17 (c) In the aspect of each processing section (however, the aspect of figure 16 (c) is not included), the premise is to process the wafer face up (Face Up). However, by facing the wafer Face Down, Figure 15 (a), Figure 15 (b), Figure 15 (c) to Figure 17 (a), Figure 17 (b), Figure 17 ( c) The appearance of each processing section shown in the figure (however, the aspect of figure 16 (c) is not included) can still be implemented at the position of the upper ring turntable mechanism. That is, when the wafer is held face-down by the upper circular turntable, it is only necessary to arrange the nozzle or the sponge for friction cleaning under the upper circular turntable.

The embodiments of the present invention have been described above. However, the present invention is not limited to the above-mentioned embodiments, and of course can be implemented in various forms within the scope of the technical idea.

[Industry availability]

The present invention can be applied to a polishing method and a polishing device for performing chemical treatment of a substrate before and during polishing of a substrate such as a semiconductor wafer.

1‧‧‧Rack

1a, 1b‧‧‧ partition

2‧‧‧ Loading/Unloading Department

3‧‧‧Grinding Department

3A‧‧‧First grinding unit

3B‧‧‧Second grinding unit

3C‧‧‧The third grinding unit

3D‧‧‧4th grinding unit

4‧‧‧ Washing Department

5‧‧‧Control Department

6‧‧‧First linear conveyor

7‧‧‧Second linear conveyor

10‧‧‧Grinding pad

11‧‧‧Lift

12‧‧‧swing conveyor

20‧‧‧Front loading department

21‧‧‧Moving mechanism

22‧‧‧Transport robot

30A, 30B, 30C, 30D Grinding table

31A, 31B, 31C, 31D

32A, 32B, 32C, 32D

33A, 33B, 33C, 33D

34A, 34B, 34C, 34D ‧‧‧ atomizer

60‧‧‧Upper ring turntable head

180‧‧‧ temporary station

190‧‧‧First washing room

191‧‧‧ First Transfer Room

192‧‧‧Second washing room

193‧‧‧Second transfer room

194‧‧‧ drying room

TP1‧‧‧First transport position

TP2‧‧‧Second conveying position

TP3‧‧‧third transfer position

TP4‧‧‧ Fourth transport position

TP5‧‧‧Fifth transport position

TP6‧‧‧The sixth transport position

TP7‧‧‧The seventh transport position

Claims (16)

A polishing method is to press the substrate to be polished on the polishing surface of the polishing table and polish the substrate, characterized in that when a plurality of polishing tables are used to perform the polishing treatment of the substrate in a plurality of stages, a chemical liquid cleaning treatment step is provided , Which uses the chemical solution to clean the processing substrate in the above-mentioned multiple-stage polishing process; the chemical solution cleaning process step is to hold the chemical solution in the recess or groove on the rotatable table, and will pass the upper circular turntable The held substrate is immersed in the chemical solution held in the recess or groove to perform the chemical solution cleaning process. For example, the polishing method according to item 1 of the patent application scope, wherein before performing the above-mentioned plural stages of polishing processing, a pre-polishing chemical solution processing step is provided, which uses a chemical solution to process the substrate. For example, the polishing method according to item 2 of the patent application scope, in which after all the polishing treatments in the aforementioned plural sections are completed, and before washing by a washing machine, there is a pre-washing chemical liquid washing step, which uses Wash the substrate. The polishing method according to item 3 of the patent application scope, wherein the aforementioned chemical liquid washing processing step, the aforementioned pre-grinding chemical liquid processing step and the aforementioned pre-cleaning chemical liquid washing step are at least one position of the plurality of grinding tables , Or the position below the swinging movement path of the upper ring turntable, or the position of loading and unloading the substrate from the upper ring turntable, or the position on the transfer path from the grinding unit to the washing unit. The polishing method according to item 4 of the patent application scope, wherein the chemical solution cleaning process steps are performed at the position of the polishing table, the position below the swinging movement path of the upper circular turntable, and the position of loading and unloading the substrate from the upper circular turntable 、The aforementioned processing steps of chemical solution before grinding The steps and the aforementioned pre-cleaning step of washing the chemical solution are carried out by immersing the substrate held by the upper circular turntable in the chemical solution, or by spraying the chemical solution from the nozzle to be held by the upper circular turntable The substrate is implemented by sliding the sponge or abrasive cloth in contact with the substrate held by the upper circular turntable. A polishing method is to press the substrate to be polished on the polishing surface of the polishing table and polish the substrate, characterized in that when a plurality of polishing tables are used to perform the polishing treatment of the substrate in a plurality of stages, a chemical liquid cleaning treatment step is provided , Which uses a chemical solution to clean the processing substrate in the foregoing multiple stages of polishing process; wherein the swing range is set in such a way that the swing ranges of the plurality of upper ring turntables overlap, and the positions where the swing movement paths of the upper ring turntables overlap A cleaning unit or a chemical solution processing unit is provided below, and the cleaning or chemical treatment of the substrate held on more than one upper circular turntable can be performed by the aforementioned one cleaning unit or a chemical solution processing unit , To perform at least one of the cleaning process step before and after polishing, and the chemical solution processing step. The polishing method according to item 4 of the patent application scope, wherein the pre-cleaning chemical liquid cleaning step performed at a position on the conveying path from the polishing unit to the cleaning unit is performed by holding the peripheral portion of the substrate The rotation of the substrate is carried out while spraying the chemical solution from the nozzle, or by holding the peripheral portion of the substrate to rotate the substrate while rubbing the cleaning member. The polishing method according to item 7 of the patent application scope is to wash the chemical solution in a state where the substrate is tilted by a tilting mechanism. For example, the polishing method according to item 7 of the patent application, wherein the aforementioned nozzle is composed of a oscillating nozzle or a two-fluid spray nozzle. A polishing device that holds a substrate to be polished by an upper circular turntable, presses the substrate against the polishing surface on the polishing table and polishes it, is characterized by having a plurality of polishing tables, which perform a plurality of stages of polishing on the substrate Processing, and at least one of the plurality of polishing tables is used as a dedicated cleaning solution for chemical solution for cleaning the substrate using the chemical solution. For example, in the polishing device according to item 10 of the patent application scope, wherein the dedicated station for cleaning the chemical liquid is used for cleaning the substrate using the chemical liquid in the polishing process in the plural stages. The polishing device according to item 10 of the patent application scope, wherein the substrate is held by the upper circular turntable, and the substrate chemical cleaning process is performed on the special platform for chemical cleaning. A polishing device as claimed in item 12 of the patent application, wherein the dedicated platform for cleaning and processing the chemical solution has at least one recess or groove for holding the chemical solution, and the substrate held by the upper ring-shaped turntable is dipped and held in the recess Or wash the chemical liquid in the chemical liquid in the tank. For example, the polishing device according to item 13 of the patent application, wherein there are a plurality of the tanks on the special platform for cleaning and processing the chemical liquid, and the plurality of tanks can respectively hold different chemical liquids, or can hold at least one chemical liquid respectively With DIW. For example, the polishing device according to item 14 of the patent application scope, wherein the special platform for cleaning and processing of the chemical solution can be sequentially immersed in the plurality of tanks by sequentially rotating and stopping the substrate held by the upper circular turntable Liquid or DIW. The polishing device according to any one of the items 10 to 15 of the patent application scope, wherein the above-mentioned upper ring-shaped turntable has: an upper ring-shaped turntable body having a diaphragm holding the substrate; And a retaining ring, which is fixed to the upper ring-shaped turntable body and is arranged in such a way as to surround the outer periphery of the substrate; the aforementioned retaining ring has a groove under the retaining ring, which is spaced apart from each other in order to allow the chemical solution to flow under the substrate It is assumed that the upper ring-shaped turntable body has ports for discharging the chemical liquid flowing into the substrate, and the grooves provided under the retaining ring are set to have more grooves away from the port portion than there are grooves near the port portion.

Images