TWI638384B - Wafer-chuck-cleaning method, semiconductor manufacturing method and cleaning system - Google Patents

Abstract

A method of cleaning a wafer holder. The cleaning method of the wafer holder includes: placing a cleaning device in the wafer holder in the vacuum chamber; adsorbing the polymer material layer of the cleaning device to the wafer holder through the wafer holder; and when the cleaning device is adsorbed on the wafer The cleaning device is separated from the wafer holder when the first time passes.

Description

Wafer holder cleaning method, semiconductor manufacturing method and cleaning system

Embodiments of the present invention relate to a cleaning method, and more particularly to a method of cleaning a wafer holder.

In the fabrication of some semiconductor devices, the semiconductor device is placed on a wafer chuck. Over time, the surface of the wafer holder may accumulate some contaminants such as dust particles, germanium particles or photoresist residues.

In order to reduce the impact of the above-mentioned contaminants on the semiconductor process, cleaning operations are generally performed for the wafer holder. While existing cleaning methods have been able to reduce contaminants on the wafer holder surface to some extent, there is still room for further improvement.

Embodiments of the present invention provide a method of cleaning a wafer holder. The wafer holder cleaning method includes: placing a cleaning device in the wafer holder in the vacuum chamber; adsorbing the polymer material layer of the cleaning device to the wafer holder; and when the cleaning device is adsorbed to the wafer holder and passing through the At one time, the cleaning device is separated from the wafer holder.

Embodiments of the present invention provide a method of fabricating a semiconductor. The semiconductor fabrication method includes: placing the first cleaning device on the wafer in a vacuum chamber a layer of polymeric material of the first cleaning device is adsorbed to the wafer holder; when the cleaning device is adsorbed to the wafer holder and passes the first time, the first cleaning device is separated from the wafer holder; and After the cleaning device is separated from the wafer holder, the semiconductor device is placed in the wafer holder to perform at least one semiconductor process on the semiconductor device.

Embodiments of the present invention provide a cleaning system including a vacuum chamber, a cleaning device, a wafer holder, a transfer device, and a controller. The cleaning device is disposed within the vacuum chamber. The cleaning device includes a substrate and a layer of polymeric material. A layer of polymeric material is disposed on the substrate. The wafer holder is disposed in the vacuum chamber. A transfer device is disposed within the vacuum chamber to selectively place the cleaning device in the wafer holder. A controller is disposed within the vacuum chamber to control the wafer holder and the transfer device. The wafer holder is a static adsorption cleaning device.

100‧‧‧ cleaning device

101‧‧‧ polymer material layer

102‧‧‧Base

200‧‧‧ cleaning system

201‧‧‧vacuum chamber

202‧‧‧ Wafer Holder

203‧‧‧Transfer device

204‧‧‧ Controller

205‧‧‧Detection device

300‧‧‧ Main body

301‧‧‧ protruding parts

302‧‧‧Characteristic Department

400, 400B, 400C‧‧‧ cleaning methods

401-404‧‧‧ operation

T _N ‧‧‧Time

T‧‧‧ interval

N‧‧‧ indicator

410-414‧‧‧ operation

500, 500B‧‧‧ Semiconductor Manufacturing System

501‧‧‧Optical device

510‧‧‧Semiconductor equipment

W‧‧‧Semiconductor device

S‧‧‧ light source

L‧‧‧Light

600‧‧‧Semiconductor production method

601-604‧‧‧ operation

700‧‧‧Semiconductor manufacturing methods

701-705‧‧‧ operation

Figure 1 is a schematic illustration of a cleaning apparatus in accordance with an embodiment of the present invention.

2A, 2B are schematic views of a cleaning system in accordance with an embodiment of the present invention.

3A, 3B are schematic views of a layer of polymeric material in accordance with an embodiment of the present invention.

4A-4C are schematic views of the operation of the cleaning method in accordance with an embodiment of the present invention.

5A and 5B are schematic views of a semiconductor manufacturing system in accordance with an embodiment of the present invention.

Figure 6 is a schematic view showing the operation of a semiconductor fabrication method in accordance with an embodiment of the present invention.

Figure 7 is a schematic illustration of the operation of a semiconductor fabrication method in accordance with an embodiment of the present invention. Figure.

The following disclosure provides many different embodiments or examples to implement various features of the present invention. The following disclosure sets forth specific examples of various components and their arrangement to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if a first feature is formed on or above a second feature, it may mean that the first feature is directly in contact with the second feature, and may include additional features. Formed between the first feature and the second feature described above such that the first feature and the second feature are not in direct contact with each other.

Spatially related terms used in the following, such as "below", "below", "lower", "above", "higher" and the like, are used to facilitate the description of one element in the illustration. Or the relationship between a feature and another component or feature(s). In addition to the orientation depicted in the drawings, these spatially relative terms are also meant to refer to devices that may be used in different orientations or in operation.

The same component numbers and/or characters may be repeated in the following various embodiments, which are for the purpose of simplicity and clarity, and are not intended to limit the specific relationship between the various embodiments and/or structures discussed.

The vocabulary of the first and second terms used hereinafter is for illustrative purposes only and is not intended to limit or limit the scope of the patent. In addition, the first feature and the second feature are not limited to the same or different features.

In the drawings, the shape or thickness of the structure may be enlarged to simplify or facilitate the marking. It is to be understood that elements not specifically described or illustrated may be in various forms well known to those skilled in the art.

Figure 1 is a schematic illustration of a cleaning apparatus 100 in accordance with an embodiment of the present invention. The cleaning device 100 includes a substrate 102 and a layer of polymeric material 101. In some embodiments, the cleaning device 100 can be placed on a wafer chuck to adhere contaminants (such as dust particles, germanium particles or photoresist residues, etc.) to the surface of the wafer holder. Material layer 101. Therefore, when the cleaning device 100 is separated from the wafer holder, the contaminant can be simultaneously removed from the surface of the wafer holder, thereby achieving the effect of cleaning the wafer holder. In some embodiments, the layer of polymeric material 101 may be comprised of a polymer of elastomeric polymer or a polymer that has controlled surface tack and is not transferred to the wafer holder. In some embodiments, the material of the substrate 102 can include a crucible. In some embodiments, the cleaning device 100 can be a working wafer having one of the semiconductor devices or a non-working wafer (ie, a blank wafer) having no semiconductor device.

2A is a schematic illustration of a cleaning system 200 in accordance with an embodiment of the present invention. The cleaning system 200 includes a vacuum chamber 201, a wafer holder 202, a transfer device 203, a controller 204, a detection device 205, and a cleaning device 100. The wafer holder 202 can be loaded with a semiconductor device (eg, a wafer) or a cleaning device 100. The transfer device 203 can be configured to selectively place the cleaning device 100 on the wafer holder 202 or to separate the cleaning device 100 from the wafer holder 202. The controller 204 can be configured at least to control the wafer holder 202, the transfer device 203, and the detection device 205. The detection device 205 can be configured to detect if the surface of the wafer holder 202 needs to be cleaned (eg, to detect if the surface of the wafer holder 202 has contaminants or if the surface of the wafer holder 202 is not flat).

In some embodiments, the delivery device 203 includes a robotic arm. In some embodiments, the detecting device 205 is an optical detecting device that determines the wafer holder by transmitting light to the wafer holder 202 and receiving the reflected light generated by the wafer holder 202. Whether the surface of the 202 needs to be cleaned (for example, by the angle of reflected light or the intensity of light).

In some embodiments, the controller 204 is configured to control the transfer device 203 whereby the cleaning device 100 is placed on the wafer holder 202 to perform a cleaning operation, as shown in FIG. 2B. When the cleaning device 100 is placed on the wafer holder 202, the controller 204 controls the wafer holder 202 to cause the wafer holder 202 to adsorb the polymer material layer 101 to the wafer holder 202. The polymer material layer 101 is compressed by the attraction of the wafer holder 202, thereby contacting the contaminants of the wafer holder 202, causing the contaminants to adhere (or adhere) to the polymer material layer 101. Next, when the transport device 203 separates the cleaning device 100 from the wafer holder 202, the contaminants adhering to the polymer material layer 101 are also separated from the wafer holder 202.

In some embodiments, the wafer holder 202 can adsorb the cleaning device 100 by electrostatic adsorption. In some embodiments, the polymeric material layer 101 can include a metal compound to enhance electrostatic adsorption forces with the wafer holder 202. In some embodiments, the surface of the wafer holder 202 can be completely covered by the layer of polymeric material 101. In some embodiments, the thickness of the polymeric material layer 101 can be greater than or equal to a predetermined thickness (eg, 200 [mu]m) whereby the above contaminants can be attached to the polymeric material layer 101. In some embodiments, after the wafer holder 202 stops the adsorption force applied to the polymeric material layer 101, the transfer device 203 separates the cleaning device 100 from the wafer holder 202.

In some embodiments, the cleaning device 100 can be adsorbed by the wafer holder 202 for a predetermined time (eg, 15 seconds), thereby increasing the extent to which the polymeric material layer 101 is squeezed, making the above-described contaminants more susceptible to adhesion. Or embedded in the polymer material layer 101. In some embodiments, the controller 204 can increase the adsorption force of the wafer holder 202, thereby increasing the extent to which the polymer material layer 101 is squeezed, such that The contaminants are more likely to be adhered or embedded in the polymer material layer 101.

According to the 2A, 2B and the described embodiments, the embodiment of the present invention does not require the wafer holder 202 to be removed from the vacuum chamber 201 for cleaning when cleaning the wafer holder 202. In general, if the wafer holder 202 is removed from the vacuum chamber 201 for cleaning, additional work time for disassembly, installation, shipping, and environmental maintenance is required. For example, when the wafer holder 202 is moved out of the vacuum chamber 201, the vacuum environment needs to be broken, so that it takes a long time to maintain the vacuum environment. Therefore, since the embodiment of the present invention does not need to remove the wafer holder 202 from the vacuum chamber 201 for cleaning, it is not necessary to consume the working time for restoring the vacuum environment, so that the time for cleaning the wafer holder 202 can be shortened, and the other time can be shortened. In one aspect, the semiconductor process that can be performed in the vacuum chamber 201 is not forced to stop due to the wafer holder 202 being removed from the vacuum chamber 201, thereby improving the efficiency of the overall semiconductor process.

Figure 3A is a schematic illustration of a layer of polymeric material 101 in accordance with an embodiment of the present invention. The polymer material layer 101 includes a body portion 300 and a protrusion portion 301. In some embodiments, the location of the projections 301 can correspond to the location of the holes in the surface of the wafer holder 202. When the cleaning device 100 is adsorbed to the wafer holder 202, the cleaning effect of the above holes can be increased. In certain embodiments, the polymeric material layer 101 includes only the body portion 300, but does not include the projections 301.

Figure 3B is a schematic illustration of a layer of polymeric material 101 in accordance with an embodiment of the present invention. The polymeric material layer 101 includes a body portion 300 and features 302. In some embodiments, feature 302 can be a toroidal projection that engages an annular groove of wafer holder 202. In some embodiments, the feature 302 can be a toroidal groove that engages the annular projection of the wafer holder 202. In some embodiments, the feature 302 can be any groove corresponding to the protrusion of the surface of the wafer holder 202, or any corresponding crystal. A projection of the groove on the surface of the round seat 202. In certain embodiments, the polymeric material layer 101 includes only the body portion 300, but does not include the features 302.

4A is a schematic illustration of the operation of cleaning method 400 in accordance with an embodiment of the present invention. In some embodiments, the cleaning method 400 can be applied to the cleaning system 200 of Figures 2A, 2B.

Operation 401 depicts placing a cleaning device in a wafer holder in a vacuum chamber. In operation 402, the layer of polymeric material of the cleaning device is adsorbed to the wafer holder through the wafer holder. In operation 403, the cleaning device is separated from the wafer holder when the cleaning device is adsorbed to the wafer holder and passes a first time.

The cleaning method 400 does not require the wafer holder (eg, wafer holder 202) to be removed from the vacuum chamber (eg, vacuum chamber 201) for cleaning. Therefore, the time for cleaning the wafer holder can be shortened, and the semiconductor process that can be performed in the vacuum chamber is not forced to stop due to the wafer holder being removed from the vacuum chamber, thereby improving the efficiency of the overall semiconductor process.

In some embodiments, contaminants on the surface of a cleaned wafer holder (eg, wafer holder 202) may still accumulate over time. Accumulated contaminants can cause damage to the wafer holder or prevent the wafer from being placed flat on the wafer holder.

In some embodiments, after operation 403 is completed, detection device 205 detects if wafer holder 202 needs to be cleaned. If the detecting device 205 determines that the wafer holder 202 needs to be cleaned, the controller 204 determines the time point at which the cleaning method 400 is executed again according to the detection result.

Another embodiment of the present invention provides a cleaning method for repeatedly cleaning a wafer holder, such as the cleaning method 400B shown in FIG. 4B. In some embodiments, cleaning method 400B can be applied to cleaning system 200 of Figures 2A, 2B. Cleaning method 400B The difference from the cleaning method 400 is operation 404. In operation 404, when the cleaning device is separated from the wafer holder and the interval time T elapses, operation 401 is again entered.

In some embodiments, the cleaning method 400B uses different interval times T for different semiconductor processes. In other words, since the speed at which the semiconductor process accumulates contaminants on the wafer holder is different, the cleaning method 400B is performed using different interval times T according to different semiconductor processes, so as to avoid excessively frequent cleaning of the wafer holder. The effect, or the time interval between avoiding cleaning operations, is too long to cause excessive accumulation of contaminants on the wafer holder.

Figure 4C is a schematic illustration of the operation of the cleaning method 400C in accordance with an embodiment of the present invention. In some embodiments, the cleaning method 400C can be applied to the cleaning system 200 of Figures 2A, 2B.

Operation 410 depicts placing a cleaning device in a wafer holder in a vacuum chamber. In operation 411, the layer of polymeric material of the cleaning device is adsorbed to the wafer holder through the wafer holder. In operation 412, the cleaning device is separated from the wafer holder when the cleaning device is adsorbed to the wafer holder and the time _TN elapses. In some embodiments, the preset value of the indicator N is 0, that is, the preset value of the time T _N is the time T ₀ .

In operation 413, it is determined whether the wafer holder surface needs to be cleaned. If the wafer holder surface needs to be cleaned, the time T _N in operation 412 is changed to time T _N+1 (i.e., the value of index N is incremented by 1) and operations 410 through 413 are performed again.

For example, in some embodiments, cleaning method 400C performs operations 410, 411. In operation 412, when the cleaning device is adsorbed to the wafer holder and the time T ₀ is elapsed (ie, the value of the index N is zero), the cleaning device is separated from the wafer holder. In operation 413, it is determined whether the wafer holder surface needs to be cleaned. If the wafer holder surface needs to be cleaned, operations 410, 411 are performed again, and in operation 412, when the cleaning device is adsorbed to the wafer holder and the time T ₁ is elapsed (ie, the value of the index N is increased by one), The cleaning device is separated from the wafer holder, and so on.

In some embodiments, the greater the value of the time index N T _N, T _N longer representative of the. In this case, after the cleaning method 400C performs the operations 410 to 412, if it is determined that the wafer holder needs to be cleaned (there are still contaminants), the cleaning method 400C will again operate 410 to operation 412, and at operation 410 to operation 412 with a longer time (e.g., using time T greater than time T _{0. 1),} the suction cleaning device in the wafer stage, thereby increasing the degree of the cleaning device of layers of polymeric material being extruded, and more contaminants It is easily adhered or embedded in the layer of polymeric material of the cleaning device, thereby further removing contaminants that have not been removed from the wafer holder. In some embodiments, time T ₀ is a first time (length) and time T ₁ is a second time (length).

On the other hand, if the wafer holder surface does not need to be cleaned, the time T _{N is} restored to a preset value (for example, time T ₀ ). In operation 414, operation 410 is again entered when the cleaning device is separated from the wafer holder and an interval time T has elapsed.

In some embodiments, the content of operation 414 can be changed to re-enter operation 410 when a detection device within the vacuum chamber determines that the wafer holder needs to be cleaned.

Figure 5A is a schematic illustration of a semiconductor fabrication system 500 in accordance with an embodiment of the present invention. The semiconductor manufacturing system 500 includes a vacuum chamber 201, a wafer holder 202, a transfer device 203, a controller 204, a detecting device 205, a cleaning device 100, a semiconductor device W, and a semiconductor device 510. Wafer holder 202 can be configured to carry a semiconductor device (eg, semiconductor device W). The transmitting device 203 can be configured to select The cleaning device 100 (or the semiconductor device W) is placed on the wafer holder 202 or the cleaning device 100 (or the semiconductor device W) is separated from the wafer holder 202. Controller 204 is at least configured to control wafer holder 202, transfer device 203, detection device 205, and semiconductor device 510. The detection device 205 can be configured to detect the presence or absence of contaminants on the surface of the wafer holder 202 to determine if the surface of the wafer holder 202 needs to be cleaned. The semiconductor device 510 can be configured to perform at least one semiconductor process on the semiconductor device W (eg, a lithography process, but is not limited thereto).

In some embodiments, after the semiconductor device 510 completes the semiconductor process applied to the semiconductor device W, the transfer device 203 carries the semiconductor device W away from the wafer holder 202. Next, the transfer device 203 can place the cleaning device 100 on the wafer holder 202 to perform a cleaning operation on the wafer holder 202.

Figure 5B is a schematic illustration of a semiconductor fabrication system 500B in accordance with an embodiment of the present invention. The semiconductor manufacturing system 500B includes a vacuum chamber 201, a wafer holder 202, a transfer device 203, a controller 204, a detecting device 205, a cleaning device 100, and a semiconductor device 510. Wafer holder 202 can be loaded with a semiconductor device or cleaning device 100. The transfer device 203 can selectively place the cleaning device 100 on the wafer holder 202 or separate the cleaning device from the wafer holder 202. The controller 204 can control at least the wafer holder 202, the transfer device 203, the detection device 205, and the semiconductor device 510. The detecting device 205 can detect whether there is contaminant on the surface of the wafer holder 202, thereby judging whether the surface of the wafer holder 202 needs to be cleaned. The semiconductor device 510 includes a light source S and an optical device 501. The optical device 501 can guide the light L from the light source S to the cleaning device 100. In some embodiments, semiconductor device 510 can perform a lithography process (eg, an ultra-violet extreme ultra-violet (EUV) lithography process) on a layer of material of substrate 102 of cleaning device 100.

As shown in FIG. 5B, the semiconductor manufacturing system 500B can fabricate a semiconductor device on the substrate 102 of the cleaning device 100, and simultaneously clean the wafer holder 202 during the fabrication of the semiconductor device, thereby reducing the fabrication of the semiconductor device and the cleaning wafer. The overall time of the seat.

Figure 6 is a schematic illustration of the operation of a semiconductor fabrication method 600 in accordance with an embodiment of the present invention. In some embodiments, semiconductor fabrication method 600 can be applied to semiconductor fabrication system 500 of 5A or semiconductor fabrication system 500B of 5B.

Operation 601 depicts placing a first cleaning device in a wafer holder in a vacuum chamber. In operation 602, the polymeric material layer of the first cleaning device is adsorbed to the wafer holder through the wafer holder. In operation 603, the first cleaning device is separated from the wafer holder when the first cleaning device is adsorbed to the wafer holder and passes a first time. In operation 604, each semiconductor device in a semiconductor device batch is placed at a wafer holder at different points in time to individually perform at least one semiconductor process on the semiconductor device, and at least one semiconductor is performed on the semiconductor device. The semiconductor device is separated from the wafer holder after the process.

In some embodiments, the semiconductor device batch described above includes one or more semiconductor devices. The semiconductor fabrication method 600 can perform at least one semiconductor process on the semiconductor device in the semiconductor device batch after the wafer holder (eg, wafer holder 202) is cleaned, thereby reducing contaminants on the wafer holder surface to the semiconductor process The impact. In some embodiments, the semiconductor fabrication method 600 does not require the wafer holder to be removed from the vacuum chamber (eg, vacuum chamber 201) for cleaning, the time to clean the wafer holder can be shortened, and the semiconductor in the vacuum chamber can be performed The process is not forced to stop due to the wafer holder being removed from the vacuum chamber, thereby improving the overall semiconductor process s efficiency.

In some embodiments, the semiconductor fabrication process 600 can be performed individually for different semiconductor device batches, thereby reducing the effects of contaminants on the wafer holder surface on each semiconductor device batch, such as causing a semiconductor The back side of the device is damaged or affects the effects of the semiconductor process. For example, after performing the semiconductor fabrication method 600 on a first semiconductor device batch, if the semiconductor fabrication method 600 is to be performed on a second semiconductor device batch, the operation 601 performed on the second semiconductor device batch will This is followed by operation 604 performed on the first semiconductor device batch.

In some embodiments, the number of semiconductor devices in the first semiconductor batch is different than the number of semiconductor devices in the second semiconductor batch. In some embodiments, the number of semiconductor devices in the first semiconductor batch and the number of semiconductor devices in the second semiconductor batch are both a predetermined number.

In some embodiments, in the case where the semiconductor fabrication method 600 is performed for the first semiconductor device batch and the operation 603 has been completed, if a detection device in the vacuum chamber completes the semiconductor process and crystallizes in a first number of semiconductor devices After the wafer is separated, it is determined that the wafer holder needs to be cleaned, and the semiconductor fabrication method 600 has been completed on behalf of the first semiconductor device batch (i.e., operation 604 is completed). In this case, the number of semiconductor devices of the first semiconductor device batch is equal to the first number. Successor, semiconductor fabrication method 600 can then be performed for a second semiconductor device batch.

In some embodiments, a first cleaning device can be used when performing the semiconductor fabrication method 600 on the first semiconductor device batch; and a second cleaning device can be used when performing the semiconductor fabrication method 600 on the second semiconductor device batch, Wherein the structures of the first cleaning device and the second cleaning device individually have a substrate and a layer of polymer material (as shown in FIG. 1).

In some embodiments, when the semiconductor fabrication method 600 is performed on the first semiconductor device batch, a lithography process (eg, an extreme ultraviolet lithography process) can be performed on the first cleaning device between operation 602 and operation 603, or When the semiconductor fabrication method 600 is performed on the second semiconductor device batch, a lithography process (eg, an extreme ultraviolet lithography process) may be performed on the second cleaning device between operation 602 and operation 603, whereby the lithography process is performed Clean the wafer holder at the same time. Thereby reducing the overall time for semiconductor device fabrication and wafer holder cleaning.

FIG. 7 is a schematic diagram of the operation of a semiconductor fabrication method 700 in accordance with an embodiment of the present invention. In some embodiments, semiconductor fabrication method 700 can be applied to semiconductor fabrication system 500 of 5A or semiconductor fabrication system 500B of 5B.

Operation 701 depicts placing a first cleaning device in a wafer holder in a vacuum chamber. In operation 702, the polymer material layer of the first cleaning device is adsorbed to the wafer holder through the wafer holder. In operation 703, the first cleaning device is separated from the wafer holder when the first cleaning device is adsorbed to the wafer holder and the time _TN elapses. In some embodiments, the preset value of the indicator N is 0, that is, the preset value of the time T _N is the time T ₀ .

In operation 704, it is determined whether the wafer holder surface needs to be cleaned. If the wafer holder surface needs to be cleaned, the time T _N in operation 703 is changed to time T _N+1 (i.e., the value of the index N is incremented by 1) and operations 701 to 704 are performed again.

For example, in some embodiments, semiconductor fabrication method 700 performs operations 701, 702. In operation 703, when the first cleaning device is adsorbed to the wafer holder and the time T ₀ is elapsed (ie, the value of the index N is 0), the first cleaning device is separated from the wafer holder. In operation 704, it is determined whether the wafer holder surface needs to be cleaned. If the wafer holder surface needs to be cleaned, operations 701, 702 are performed again, and in operation 703, when the first cleaning device is adsorbed to the wafer holder and the time T ₁ is elapsed (ie, the value of the index N is increased by one) , separating the first cleaning device from the wafer holder, and so on.

In some embodiments, the greater the value of the time index N T _N, T _N longer representative of the. In this case, after performing the operations 701 to 703, the semiconductor fabrication method 700, if it is determined that the wafer holder needs to be cleaned (there are still contaminants), the semiconductor fabrication method 700 will again operate 701 to operation 703, and operate. 701 to 703 to adsorb the first cleaning device to the wafer table for a longer period of time (eg, using time T ₁ greater than time T ₀ ), thereby increasing the layer of polymer material of the first cleaning device being squeezed To the extent that the contaminants are more easily adhered or embedded in the layer of polymeric material of the first cleaning device, thereby further cleaning contaminants that have not been removed from the wafer holder. In some embodiments, time T ₀ is a first time (length) and time T ₁ is a second time (length).

Then, if the wafer holder surface does not need to be cleaned, the time T _{N is} restored to a preset value (eg, time T ₀ ). In operation 705, each semiconductor device in a semiconductor device batch is placed at a wafer holder at different time points to individually perform at least one semiconductor process on the semiconductor device, and at least one semiconductor is executed on the semiconductor device. The semiconductor device is separated from the wafer holder after the process.

In some embodiments, the semiconductor device batch described above includes one or more semiconductor devices. The semiconductor fabrication method 700 can confirm the wafer holder (eg, crystal After the wafer 202) has been cleaned, at least one semiconductor process is performed on each of the semiconductor device batches, thereby reducing the effects of contaminants on the wafer holder surface on the semiconductor process. In some embodiments, the semiconductor fabrication method 700 does not require the wafer holder to be moved out of the vacuum chamber (eg, vacuum chamber 201) for cleaning, the time to clean the wafer holder can be shortened, and the semiconductor in the vacuum chamber can be performed The process is not forced to stop due to the wafer holder being removed from the vacuum chamber, thereby improving the efficiency of the overall semiconductor process.

In some embodiments, semiconductor fabrication method 700 can be performed individually for different semiconductor device batches, thereby reducing the effects of contaminants on the wafer holder surface on each semiconductor device batch. For example, after performing the semiconductor fabrication method 700 on a first semiconductor device batch, if the semiconductor fabrication method 700 is to be performed on a second semiconductor device batch, the operation 701 performed on the second semiconductor device batch will This is followed by operation 705 performed on the first semiconductor device batch.

In some embodiments, the number of semiconductor devices in the first semiconductor batch is different than the number of semiconductor devices in the second semiconductor batch. In some embodiments, the number of semiconductor devices in the first semiconductor batch and the number of semiconductor devices in the second semiconductor batch are both a predetermined number.

In some embodiments, the semiconductor fabrication method 700 is performed for a first semiconductor device batch. In operation 704, it is determined that the surface of the wafer holder does not need to be cleaned. If a detecting device in the vacuum chamber completes the semiconductor process and is separated from the wafer holder after a first number of semiconductor devices, the wafer holder needs to be determined. The semiconductor fabrication method 700 is completed (i.e., operation 705 is completed) on behalf of the first semiconductor device batch. In this case, the first semiconductor device batch The number of semiconductor devices is equal to the first number. Successor, semiconductor fabrication method 700 can then be performed for a second semiconductor device batch.

In some embodiments, a first cleaning device can be used when performing the semiconductor fabrication method 700 on the first semiconductor device batch, and a second cleaning device can be used when performing the semiconductor fabrication method 700 on the second semiconductor device batch, wherein The structure of a cleaning device and a second cleaning device individually has a base and a layer of polymeric material (as shown in Figure 1).

In some embodiments, when the semiconductor fabrication method 700 is performed on the first semiconductor device batch, a lithography process (eg, an extreme ultraviolet lithography process) can be performed on the first cleaning device between operation 702 and operation 703, or When the semiconductor fabrication method 700 is performed on the second semiconductor device batch, a lithography process (eg, an extreme ultraviolet lithography process) may be performed on the second cleaning device between operation 702 and operation 703, whereby the lithography process is performed. The wafer holder is simultaneously cleaned during the process, thereby reducing the overall time for semiconductor device fabrication and wafer holder cleaning.

Embodiments of the present invention provide a method of cleaning a wafer holder. The cleaning method of the wafer holder includes: placing a cleaning device in the wafer holder in the vacuum chamber; adsorbing the polymer material layer of the cleaning device to the wafer holder through the wafer holder; and when the cleaning device is adsorbed on the wafer The cleaning device is separated from the wafer holder when the first time passes.

According to some embodiments, when the cleaning device is separated from the wafer holder and passes an interval time, the cleaning device is placed in the wafer holder and the polymer material layer of the cleaning device is adsorbed to the wafer holder through the wafer holder, and when cleaning When the device is adsorbed to the wafer holder and the first time passes, the cleaning device is separated from the wafer holder.

According to some embodiments, the cleaning device is separated from the wafer holder After that, it is judged whether the surface of the wafer holder needs to be cleaned. If the surface of the wafer holder needs to be cleaned, the cleaning device is placed in the wafer holder, and the polymer material layer of the cleaning device is adsorbed to the wafer holder through the wafer holder. The cleaning device is separated from the wafer holder when the cleaning device is adsorbed to the wafer holder and passes the second time. In some embodiments, the second time is greater than the first time.

According to some embodiments, if the surface of the wafer holder does not need to be cleaned, the cleaning device is placed in the wafer holder when the cleaning device is separated from the wafer holder and passes through an interval, and the polymer of the cleaning device is passed through the wafer holder. The material layer is adsorbed to the wafer holder. The cleaning device is separated from the wafer holder when the cleaning device is adsorbed to the wafer holder and passes the first time.

Embodiments of the present invention provide a method of fabricating a semiconductor. The semiconductor manufacturing method comprises: placing a first cleaning device in a wafer holder in a vacuum chamber; adsorbing a polymer material layer of the first cleaning device to the wafer holder through the wafer holder; and when the cleaning device is adsorbed on the wafer Separating the first cleaning device from the wafer holder when the first time passes; and after the first cleaning device is separated from the wafer holder, placing the semiconductor device in the wafer holder to perform at least one semiconductor process on the semiconductor device .

According to some embodiments, after the semiconductor device is separated from the wafer holder, the first cleaning device is placed on the wafer holder, and the polymer material layer of the first cleaning device is adsorbed to the wafer holder through the wafer holder. The first cleaning device is separated from the wafer holder when the first cleaning device is adsorbed to the wafer holder and the first time passes.

According to some embodiments, the wafer holder surface needs to be cleaned after the first cleaning device is separated from the wafer holder and the semiconductor device is placed in the wafer holder. If the surface of the wafer holder needs to be cleaned, place the first cleaning device Placed in the wafer holder, the polymer material layer of the first cleaning device is adsorbed to the wafer holder through the wafer holder, and the first cleaning device is combined with the crystal when the cleaning device is adsorbed to the wafer holder and passes the second time The round seat is separated. If the wafer holder surface does not need to be cleaned, the semiconductor device is placed in the wafer holder to perform at least one semiconductor process on the semiconductor device. In some embodiments, the second time is greater than the first time.

According to some embodiments, after the semiconductor device is separated from the wafer holder, the second cleaning device is placed on the wafer holder, and the polymer material layer of the second cleaning device is adsorbed to the wafer holder through the wafer holder. The second cleaning device is separated from the wafer holder when the second cleaning device is adsorbed to the wafer holder and the first time passes.

According to some embodiments, when the wafer holder adsorbs the polymer material layer of the first cleaning device to the wafer holder, performing a first lithography process on the first material layer of the first cleaning device, or When the polymer material layer of the second cleaning device is adsorbed to the wafer holder, the second lithography process is performed on the second material layer of the second cleaning device.

Embodiments of the present invention provide a cleaning system including a vacuum chamber, a cleaning device, a wafer holder, a transfer device, and a controller. The cleaning device is disposed within the vacuum chamber. The cleaning device includes a substrate and a layer of polymeric material. A layer of polymeric material is disposed on the substrate. The wafer holder is disposed in the vacuum chamber. A transfer device is disposed within the vacuum chamber to selectively place the cleaning device in the wafer holder. A controller is disposed within the vacuum chamber to control the wafer holder and the transfer device. The wafer holder is a static adsorption cleaning device.

The foregoing summary of the invention is inferred by the claims It should be understood by those of ordinary skill in the art and can be easily based on the disclosure. The other processes and structures are designed or modified to achieve the same objectives and/or achieve the same advantages as the embodiments described herein. Those of ordinary skill in the art should also understand that such equivalent structures are not departing from the spirit and scope of the invention. Various changes, permutations, or alterations may be made in the present disclosure without departing from the spirit and scope of the invention.

Claims (10)

A method of cleaning a wafer holder, comprising: placing a cleaning device in a wafer holder in a vacuum chamber; adsorbing a polymer material layer of the cleaning device to the wafer holder; and when the cleaning device is The cleaning device is separated from the wafer holder when adsorbed to the wafer holder and after a first time. The method for cleaning a wafer holder according to claim 1, further comprising: placing the cleaning device in the wafer holder when the cleaning device is separated from the wafer holder and after an interval of time A layer of polymeric material of the cleaning device is adsorbed to the wafer holder, and the cleaning device is separated from the wafer holder when the cleaning device is adsorbed to the wafer holder and the first time passes. The method for cleaning a wafer holder according to claim 1, further comprising: determining whether the wafer holder surface needs to be cleaned; and if the wafer holder surface needs to be cleaned, placing the cleaning device on the a wafer holder through which the polymer material layer of the cleaning device is adsorbed to the wafer holder, and when the cleaning device is adsorbed to the wafer holder and passes a second time, the cleaning device is The wafer holder is separated; wherein the second time is greater than the first time. The method for cleaning a wafer holder according to claim 3, further comprising: if the surface of the wafer holder does not need to be cleaned, when the cleaning device is separated from the wafer holder and passes an interval, The cleaning device is placed on the wafer holder, the polymer material layer of the cleaning device is adsorbed to the wafer holder through the wafer holder, and when the cleaning device is adsorbed to the wafer holder and passes the first time The cleaning device is separated from the wafer holder. A semiconductor fabrication method comprising: placing a first cleaning device in a wafer holder in a vacuum chamber; adsorbing a polymer material layer of the first cleaning device to the wafer holder; when the first cleaning Separating the first cleaning device from the wafer holder when the device is adsorbed to the wafer holder and after a first time; and placing a semiconductor device after separating the first cleaning device from the wafer holder At the wafer holder, at least one semiconductor process is performed on the semiconductor device. The semiconductor manufacturing method according to claim 5, further comprising: after the semiconductor device is separated from the wafer holder, the first cleaning device is placed on the wafer holder, and the wafer holder is passed through the wafer holder A layer of polymeric material of a cleaning device is adsorbed to the wafer holder, and the first cleaning device is separated from the wafer holder when the first cleaning device is adsorbed to the wafer holder and passes the first time. The semiconductor manufacturing method of claim 5, further comprising: determining the surface of the wafer holder after separating the first cleaning device from the wafer holder and placing the semiconductor device on the wafer holder Whether it needs to be cleaned; if the surface of the wafer holder needs to be cleaned, the first cleaning device is placed on the wafer holder, and the polymer material layer of the first cleaning device is adsorbed to the wafer through the wafer holder a seat, and separating the first cleaning device from the wafer holder when the first cleaning device is adsorbed to the wafer holder and after a second time; and if the wafer holder surface does not need to be cleaned, Depositing the semiconductor device in the wafer holder to perform the at least one semiconductor process on the semiconductor device; The second time is greater than the first time. The semiconductor manufacturing method of claim 7, further comprising: after the semiconductor device is separated from the wafer holder, placing a second cleaning device on the wafer holder; and transmitting the wafer holder through the wafer holder The polymer material layer of the second cleaning device is adsorbed to the wafer holder; and when the second cleaning device is adsorbed to the wafer holder and passes the first time, the second cleaning device is separated from the wafer holder. The semiconductor manufacturing method of claim 8, further comprising: when the polymer material layer of the first cleaning device is adsorbed to the wafer holder at the wafer holder, the first cleaning device is Performing a first lithography process on a material layer, or performing a second material layer on one of the second cleaning devices when the wafer holder adsorbs the polymer material layer of the second cleaning device to the wafer holder The second lithography process. A cleaning system comprising: a vacuum chamber; a cleaning device disposed in the vacuum chamber, the cleaning device comprising: a substrate; and a layer of polymer material disposed on the substrate; a wafer holder, Arranged in the vacuum chamber; a transfer device disposed in the vacuum chamber to selectively place the cleaning device in the wafer holder; and a controller disposed in the vacuum chamber to control the crystal a round seat and the conveyor; The wafer holder is electrostatically adsorbed to the polymer material layer of the cleaning device.