TWI541960B - Package apparatus and manufacturing method thereof - Google Patents

Description

Packaging device and manufacturing method thereof

The present invention relates to a package device and a method of fabricating the same, and more particularly to a semiconductor package device and a method of fabricating the same.

In the new generation of electronic products, the pursuit of thinner and lighter, more demanding products with versatility and high performance, therefore, integrated circuits (IC) must accommodate more electronic components in a limited area to achieve high density With the miniaturization requirements, the electronics industry has developed a new type of packaging technology to embed electronic components in the substrate, greatly reducing the size of the package, shortening the connection path between the electronic components and the substrate, and also using the build-up technology (Build- Up) Increase the wiring area to meet the trend of light, short, and versatile.

Figure 1 shows a conventional glass fiber substrate package structure. The glass fiber substrate package structure 10 includes a glass fiber substrate 100, which may be, for example, a glass fiber epoxy copper foil substrate FR-4 model or an FR-5 model, wherein the glass fiber substrate 100 is via a laser via (Laser Via). The recess 110 and the plurality of vias 120 are formed, the electronic component 130 is fixed in the recess 110, and the metal conductive pillars 140 are disposed in the partial vias 120. The first metal conductive layers 142 and 144 are respectively disposed on the glass fiber substrate 100. The second conductive layer 150 is disposed on the insulating layer 150 and is connected to the electronic component 130 and The first metal conductive layers 142, 144 are electrically conductive.

However, the above-mentioned conventional glass fiber substrate packaging structure, which is made of a glass fiber material as a substrate, is too expensive, and a laser opening technique is used to form a laminated structure of four layers of metal layer laser blind buried holes, wherein The processing time of the plurality of laser openings is long and the process is complicated, and the cost of the four metal layers is also high. The traditional glass fiber substrate packaging structure has no industrial advantage.

The invention provides a packaging device which can use a Mold Compound Layer as a core material of a Coreless Substrate and forms a via hole and a pre-package interconnection system by using a plating pillar layer (Mold Interconnect System) The MIS) package method embeds the passive component in the substrate in the fabrication of the substrate, forming a simple two-layer metal layer with a stacked structure of buried passive components.

The invention provides a manufacturing method of a packaging device, which can replace an expensive glass fiber substrate with a lower cost Mold Compound, and replace the expensive four with a lower cost two-layer metal layer plating pillar layer process. The layer metal layer laser blind buried hole process, so the processing time is short and the process is simple.

In a first embodiment, the present invention provides a package device including a first wire layer, a metal layer, a pillar layer, a passive component, a first sealant layer, a second wire layer, and an anti-proof layer. Solder layer. The first wire layer has a first surface and a second surface. The metal layer is disposed on the first surface of the first wire layer. One end of the pillar layer is disposed on the second surface of the first wire layer and forms a concave structure with the first wire layer. The passive component is disposed and electrically coupled to the second surface of the first wire layer within the female structure. The first adhesive layer is disposed in a portion of the first wire layer and the pillar layer, and covers the passive component, wherein the first sealant layer is not exposed on the first surface of the first wire layer and one end of the pillar layer. The second wire layer is disposed on one end of the first sealant layer and the pillar layer. The solder resist layer is disposed on the first sealant layer and the second wire layer.

In a first embodiment, the present invention provides a method of fabricating a package device, the method comprising: providing a metal carrier having a first side and a second side; forming a first wire layer on the metal Forming a pillar layer on the first wire layer, wherein the pillar layer and the first wire layer form a concave structure; providing a passive component and electrically connecting to the concave shape Forming a first sealant layer over the first wire layer, the passive component, the pillar layer and the second side of the metal carrier; exposing the pillar layer One end; forming a second wire layer on the first sealant layer and one end of the exposed pillar layer Forming a solder mask on the first sealant layer and the second wire layer; and removing a portion of the metal carrier to form a window, wherein the first wire layer and the first sealant layer Exposed from this window.

In a second embodiment, the present invention provides a package device including a first wire layer, a metal layer, a first dielectric layer, a pillar layer, a passive component, a first sealant layer, and a a second wire layer and a solder resist layer. The first wire layer has a first surface and a second surface. The metal layer is disposed on the first surface of the first wire layer. The first dielectric layer is disposed in a portion of the first conductive layer, wherein the first dielectric layer is not exposed on the first surface of the first conductive layer, and the first dielectric layer is not lower than the second conductive layer surface. The pillar layer is disposed on the second surface of the first wire layer and forms a concave structure with the first wire layer. The passive component is disposed and electrically coupled to the second surface of the first wire layer within the female structure. The first adhesive layer is disposed in a portion of the pillar layer and covers the passive component, wherein the first sealant layer is not exposed at one end of the pillar layer. The second wire layer is disposed on one end of the first sealant layer and the pillar layer. The solder resist layer is disposed on the first sealant layer and the second wire layer.

In a second embodiment, the present invention provides a method of fabricating a package device, the method comprising: providing a metal carrier having a first side and a second side; forming a first dielectric layer on the metal Forming a first wire layer on the second side of the metal carrier, wherein the first dielectric layer is disposed in a portion of the first wire layer, and the first dielectric layer is not lower than the first layer a conductive layer is formed on the first conductive layer, wherein the conductive pillar layer and the first conductive layer form a concave structure; a passive component is provided and electrically connected to the first conductive layer in the concave structure; Forming a first sealant layer covering the first dielectric layer, the first wire layer, the passive component, the pillar layer and the second side of the metal carrier; exposing one end of the pillar layer; forming a second conductor layer a glue layer and one end of the exposed pillar layer; forming a solder resist layer on the first sealant layer and the second wire layer; removing a portion of the metal carrier plate to form a window, wherein the first wire layer The first dielectric layer is exposed from the window.

In a third embodiment, the present invention provides a package device including a first wire layer, a metal layer, a first dielectric layer, a second dielectric layer, a conductor layer, a pillar layer, and a Passive component, a first sealant layer, a second wire layer, and an anti-proof layer Solder layer. The first wire layer has a first surface and a second surface. The metal layer is disposed on the first surface of the first wire layer. The first dielectric layer is disposed in a portion of the first conductive layer, wherein the first dielectric layer is not exposed on the first surface of the first conductive layer, and the first dielectric layer is not lower than the second conductive layer surface. The second dielectric layer is disposed on the first dielectric layer. The pillar layer is disposed on the conductor layer and forms a concave structure with the conductor layer. The passive component is disposed and electrically coupled to the second surface of the first wire layer within the female structure. The first adhesive layer is disposed in a portion of the second dielectric layer, the conductor layer and the pillar layer, and covers the passive component, wherein the first sealant layer is not exposed at one end of the pillar layer. The second wire layer is disposed on one end of the first sealant layer and the pillar layer. The solder resist layer is disposed on the first sealant layer and the second wire layer.

In a third embodiment, the present invention provides a method of fabricating a package device, the method comprising: providing a metal carrier having a first side and a second side; forming a first dielectric layer on the metal Forming a first wire layer on the second side of the metal carrier, wherein the first dielectric layer is disposed in a portion of the first wire layer, and the first dielectric layer is not lower than the first layer a conductive layer; forming a second dielectric layer on the first dielectric layer; forming a conductor layer on the first conductive layer; forming a pillar layer on the conductor layer, wherein the pillar layer and the conductor layer form a concave shape a passive component is disposed and electrically connected to the first wire layer in the concave structure; forming a first sealing layer covering the first dielectric layer, the second dielectric layer, the first wire layer, and the conductor layer a passive component, a pillar layer and a second side of the metal carrier; exposing one end of the pillar layer; forming a second conductor layer on one end of the first sealant layer and the exposed pillar layer; forming a solder resist layer On the first sealant layer and the second wire layer; removing the metal carrier plate Sub-region to form a window, wherein the first dielectric layer and the first conductor layer is exposed from the window.

10‧‧‧glass fiber substrate package structure

100‧‧‧glass fiber substrate

110‧‧‧ Groove

120‧‧‧vias

130‧‧‧Electronic components

140‧‧‧Metal conductive column

142, 144‧‧‧ first metal conductive layer

146, 148‧‧‧Second metal conductive layer

150‧‧‧Insulation

20, 40, 60‧‧‧ packaged devices

200‧‧‧First wire layer

202‧‧‧ first surface

204‧‧‧Second surface

210‧‧‧metal layer

220‧‧‧ Guide column

222‧‧‧ concave structure

224‧‧‧Partial areas

226‧‧‧ one end of the guide column

230‧‧‧ Passive components

240‧‧‧First adhesive layer

250‧‧‧Second wire layer

260‧‧‧ solder mask

270‧‧‧External components

280‧‧‧Second sealant

290‧‧‧metal ball

30, 50, 70‧‧‧ Production methods

Step S302‧‧‧Step S334

Step S502‧‧‧Step S534

Step S702‧‧‧Step S740

300‧‧‧Metal carrier board

302‧‧‧ first side

304‧‧‧ second side

306‧‧‧ window

310‧‧‧First photoresist layer

320‧‧‧Second photoresist layer

330‧‧‧ Third photoresist layer

340‧‧‧fourth photoresist layer

350‧‧‧ Fifth photoresist layer

360‧‧‧ sixth photoresist layer

370‧‧‧ seventh photoresist layer

380‧‧‧ eighth photoresist layer

410‧‧‧First dielectric layer

610‧‧‧Second dielectric layer

620‧‧‧ conductor layer

C‧‧‧ cutting process

Figure 1 shows a conventional glass fiber substrate package structure.

2 is a schematic view of a packaging device according to a first embodiment of the present invention.

3 is a flow chart of a method of fabricating a packaging device according to a first embodiment of the present invention.

4A to 4Q are schematic views showing the fabrication of a packaging device according to a first embodiment of the present invention.

FIG. 5 is a schematic diagram of a packaging device according to a second embodiment of the present invention.

FIG. 6 is a flow chart of a method for fabricating a packaging device according to a second embodiment of the present invention.

7A to 7Q are schematic views showing the fabrication of a packaging device according to a second embodiment of the present invention.

FIG. 8 is a schematic diagram of a packaging device according to a third embodiment of the present invention.

9 is a flow chart of a method of fabricating a package device according to a third embodiment of the present invention.

10A to 10T are schematic views showing the fabrication of a packaging device according to a third embodiment of the present invention.

2 is a schematic view of a packaging device according to a first embodiment of the present invention. The package device 20 includes a first wire layer 200, a metal layer 210, a pillar layer 220, a passive component 230, a first sealant layer 240, a second wire layer 250, and a solder resist layer 260. The first wire layer 200 has a first surface 202 and a second surface 204 opposite to each other. The metal layer 210 is disposed on the first surface 202 of the first wire layer 200. The pillar layer 220 is disposed on the second surface 204 of the first wire layer 200 and forms a concave structure 222 with the first wire layer 200. The passive component 230 is disposed and electrically coupled to the second surface 204 of the first wire layer 200 within the concave structure 222. The first adhesive layer 240 is disposed in the partial region 224 of the first wire layer 200 and the pillar layer 220, and covers the passive component 230, wherein the first sealant layer 240 is not exposed on the first surface of the first wire layer 200. 202 and one end 226 of the pillar layer 220. In this embodiment, the first sealing layer 240 is disposed in the entire area of the first wire layer 200 and the pillar layer 220, but is not limited thereto. In addition, the first sealant layer 240 has a phenolic resin (Novolac-Based Resin), an epoxy resin (Epoxy-Based Resin), a Silicone-Based Resin or other suitable coating agent, but Not limited to this. The second wire layer 250 is disposed on one end 226 of the first sealant layer 240 and the pillar layer 220. The solder resist layer 260 is disposed on the first sealant layer 240 and the second wire layer 250.

The packaging device 20 further includes an external component 270, a second sealing layer 280, and a plurality of metal balls 290. The external component 270 is disposed and electrically coupled to the first surface 202 of the first wire layer 200. The second sealant layer 280 is disposed on the first surface 202 of the external component 270 and the first wire layer 200. A plurality of metal balls 290 are disposed on the second wire layer 250. In an embodiment, the external component 270 is an active component, a passive component, a semiconductor chip, or a flexible circuit board, but This is limited.

3 is a flow chart of a method for fabricating a packaging device according to a first embodiment of the present invention, and FIGS. 4A to 4Q are schematic diagrams showing the manufacturing of a packaging device according to a first embodiment of the present invention. The manufacturing method 30 of the packaging device 20 includes the following steps:

Step S302, as shown in FIG. 4A, provides a metal carrier 300 having a first side 302 and a second side 304.

Step S304, as shown in FIG. 4B, a first photoresist layer 310 is formed on the second side 304 of the metal carrier 300 and a second photoresist layer 320 on the first side 302 of the metal carrier 300. In this embodiment, the first photoresist layer 310 is formed by using a photolithography technique, but is not limited thereto.

Step S306, as shown in FIG. 4C, a first wire layer 200 is formed on the second side 304 of the metal carrier 300. In the present embodiment, the first wire layer 200 is formed by electroplating (Electrolytic Plating) technology, but is not limited thereto. The first wire layer 200 may be a patterned wire layer including at least one trace and at least one wafer holder. The material of the first wire layer 200 may be metal, such as copper.

Step S308, as shown in FIG. 4D, a third photoresist layer 330 is formed on the first photoresist layer 310 and the first wiring layer 200. In this embodiment, the third photoresist layer 330 is formed by using a dry film photoresist process, but is not limited thereto.

Step S310, as shown in FIG. 4E, a portion of the third photoresist layer 330 is removed to expose the first wiring layer 200. In this embodiment, the partial region of the third photoresist layer 330 is removed by using a photolithography technique, but is not limited thereto.

Step S312, as shown in FIG. 4F, a pillar layer 220 is formed on the first wiring layer 200. In the present embodiment, the pillar layer 220 is formed by electroplating (Electrolytic Plating) technology, but is not limited thereto. The pillar layer 220 includes at least one conductive pillar formed on the trace corresponding to the first conductive layer 200 and the wafer holder. The material of the pillar layer 220 may be metal, such as copper.

Step S314, as shown in FIG. 4G, removing the first photoresist layer 310, the second photoresist layer 320, and the third photoresist layer 330 to form the first wiring layer 200 on the second side 304 of the metal carrier 300. And forming a pillar layer 220 on the first wire layer 200, The pillar layer 220 and the first wire layer 200 form a concave structure 222.

Step S316, as shown in FIG. 4H, a passive component 230 is provided and electrically connected to the first wire layer 200 in the concave structure 222.

Step S318, as shown in FIG. 4I, a first sealing layer 240 is formed to cover the first wire layer 200, the passive component 230, the pillar layer 220 and the second side 304 of the metal carrier 300. In this embodiment, the first sealant layer 240 is formed by a transfer molding technique, and the material of the first sealant layer 240 may include a phenolic resin (Novolac-Based Resin), an epoxy resin. (Epoxy-Based Resin), Silicone-Based Resin or other suitable coating agent, covering the first wire layer 200, the passive component 230 and the pillar layer 220 in a liquid state under high temperature and high pressure, After curing, a first sealant layer 240 is formed. The first adhesive layer 240 may also include a suitable filler such as powdered cerium oxide.

In another embodiment, the first encapsulation layer 240 may also be formed using an injection molding or compression molding technique.

The step of forming the first sealant layer 240 may include: providing a coating agent, wherein the coating agent has a resin and powdered cerium oxide. The coating agent is heated to a liquid state. A coating agent in a liquid state is injected onto the second side 304 of the metal carrier 300, and the coating agent coats the first wiring layer 200, the passive component 230, and the pillar layer 220 under high temperature and high pressure. The coating agent is cured to form the first sealing layer 240, but the step of forming the first sealing layer 240 is not limited thereto.

Step S320, as shown in FIG. 4J, exposes one end 226 of the pillar layer 220. In the present embodiment, the exposed pillar layer 220 is subjected to a Grinding method to remove a portion of the first sealant layer 240 to expose one end 226 of the pillar layer 220. Preferably, but not limited to, one end 226 of the pillar layer 220 is substantially aligned with the first sealant layer 240, such as coplanar. In another embodiment, one end 226 of the pillar layer 220 may be exposed while forming the first sealant layer 240 without removing any portion of the first sealant layer 240.

Step S322, as shown in FIG. 4K, a second wire layer 250 is formed on one end 226 of the first sealant layer 240 and the exposed pillar layer 220. In an embodiment, the second wire layer 250 is applicable to electroless plating (electroplating), sputtering (Sputtering Coating) technology or thermal coating technology is formed, but not limited to this. The second wire layer 250 may be a patterned wire layer including at least one trace and formed on one end 226 corresponding to the exposed pillar layer 220. The material of the second wire layer 250 may be metal, such as copper.

Step S324, as shown in FIG. 4L, a solder resist layer 260 is formed on the first sealant layer 240 and the second wire layer 250, and a portion of the second wire layer 250 is exposed. Wherein, the solder resist layer 260 has the effect of insulating the electrical properties of the traces of the second wire layer 250.

Step S326, as shown in FIG. 4M, a portion of the metal carrier 300 is removed to form a window 306, wherein the first wire layer 200 and the first sealant layer 240 are exposed from the window 306. In this embodiment, part of the removal of the metal carrier 300 is achieved by applying a lithography process and an etching technique. The traces and wafer holders of the first wiring layer 200 may also be exposed from the window 306. In addition, the metal carrier 300 is provided. A portion of the area left is formed as a metal layer 210.

Step S328, as shown in FIG. 4N, an external component 270 is disposed and electrically connected to the first surface 202 of the first wire layer 200. In an embodiment, the external component 270 is an active component, a passive component, a semiconductor chip, or a flexible circuit board, but is not limited thereto.

Step S330, as shown in FIG. 4O, a second encapsulation layer 280 is formed on the first surface 202 of the external component 270 and the first wiring layer 200. In this embodiment, the second sealant layer 280 is formed by a transfer molding technique, and the second sealant layer 280 may include a phenolic resin (Novolac-Based Resin) and an epoxy resin. (Epoxy-Based Resin), Silicone-Based Resin or other suitable coating agent, covering the external component 270 and the first surface 202 of the first wire layer 200 in a liquid state under high temperature and high pressure. After curing, a second sealant layer 280 is formed. The second sealant layer 280 may also include a suitable filler such as powdered cerium oxide.

In another embodiment, the second encapsulation layer 280 can also be formed using an injection molding or compression molding technique.

Step S332, as shown in FIG. 4P, a plurality of metal balls 290 are formed on the second wire layer 250. The material of each of the metal balls 290 may be a metal such as copper.

Step S334, as shown in FIG. 4Q, finally performing the cutting process C on at least the first wire layer 200, the metal layer 210, the pillar layer 220, the first sealant layer 240, the second wire layer 250, or the solder resist layer 260. One of the layers forms a package device 20 as shown in FIG.

Specifically, the packaging device 20 of the first embodiment of the present invention replaces the expensive conventional glass fiber substrate with the first sealing material as the main material of the coreless substrate, and has two layers at a lower cost. The metal layer plating pillar layer process replaces the expensive traditional four-layer metal layer laser blind buried hole process, so the processing time is short and the flow is simple, so the production cost can be greatly reduced.

FIG. 5 is a schematic diagram of a packaging device according to a second embodiment of the present invention. The package device 40 is substantially similar to the structure of the package device 20 of the first embodiment of the present invention, and includes a first wire layer 200, a metal layer 210, a first dielectric layer 410, a pillar layer 220, and a passive The component 230, a first sealant layer 240, a second wire layer 250, and a solder resist layer 260. The first wire layer 200 has a first surface 202 and a second surface 204 opposite to each other. The metal layer 210 is disposed on the first surface 202 of the first wire layer 200. The first dielectric layer 410 is disposed in a portion of the first conductive layer 200, wherein the first dielectric layer 410 is not exposed on the first surface 202 of the first conductive layer 200, and the first dielectric layer 410 is not lower than the first dielectric layer 410. A second surface 204 of a wire layer 200. The pillar layer 220 is disposed on the second surface 204 of the first wire layer 200 and forms a concave structure 222 with the first wire layer 200. The passive component 230 is disposed and electrically coupled to the second surface 204 of the first wire layer 200 within the concave structure 222. The first adhesive layer 240 is disposed in a portion 224 of the pillar layer 220 and encases the passive component 230, wherein the first sealant layer 240 is not exposed to one end 226 of the pillar layer 220. In this embodiment, the first sealant layer 240 is disposed in the entire area of the pillar layer 220, but is not limited thereto. In addition, the first sealant layer 240 has a phenolic resin (Novolac-Based Resin), an epoxy resin (Epoxy-Based Resin), a Silicone-Based Resin or other suitable coating agent, but Not limited to this. The second wire layer 250 is disposed on one end 226 of the first sealant layer 240 and the pillar layer 220. The solder resist layer 260 is disposed on the first sealant layer 240 and the second wire layer 250.

The packaging device 40 further includes an external component 270 and a second sealing layer. 280 and a plurality of metal balls 290. The external component 270 is disposed and electrically coupled to the first surface 202 of the first wire layer 200. The second sealant layer 280 is disposed on the first surface 202 of the external component 270 and the first wire layer 200. A plurality of metal balls 290 are disposed on the second wire layer 250. In an embodiment, the external component 270 is an active component, a passive component, a semiconductor chip, or a flexible circuit board, but is not limited thereto. 6 is a flow chart of a method for fabricating a package device according to a second embodiment of the present invention, and FIGS. 7A to 7Q are schematic views showing the manufacture of a package device according to a second embodiment of the present invention. The manufacturing method 50 of the packaging device 40 includes the following steps:

Step S502, as shown in FIG. 7A, provides a metal carrier 300 having a first side 302 and a second side 304 opposite to each other.

Step S504, as shown in FIG. 7B, a first dielectric layer 410 is formed on the second side 304 of the metal carrier 300 and a fourth photoresist layer 340 on the first side 302 of the metal carrier. In this embodiment, the first dielectric layer 410 is applied by a coating process, and then formed by a photolithography process and an Etch process. The fourth photoresist layer 340 is applied with a dry film photoresist. The process is formed, but not limited to this.

Step S506, as shown in FIG. 7C, a first conductive layer 200 is formed on the second side 304 of the metal carrier 300, wherein the first dielectric layer 410 is disposed in a portion of the first conductive layer 200. The electrical layer 410 is not lower than the first wiring layer 200. In the present embodiment, the first wire layer 200 is formed by electroplating (Electrolytic Plating) technology, but is not limited thereto. The first wire layer 200 may be a patterned wire layer including at least one trace and at least one wafer holder. The material of the first wire layer 200 may be metal, such as copper.

Step S508, as shown in FIG. 7D, a fifth photoresist layer 350 is formed on the first dielectric layer 410 and the first wiring layer 200. In the embodiment, the fifth photoresist layer 350 is formed by using a dry film photoresist process, but is not limited thereto.

Step S510, as shown in FIG. 7E, a portion of the fifth photoresist layer 350 is removed to expose the first wiring layer 200. In this embodiment, the removal of a portion of the fifth photoresist layer 350 is achieved by using a photolithography technique, but is not limited thereto.

Step S512, as shown in FIG. 7F, a pillar layer 220 is formed on the first wiring layer 200. In the present embodiment, the pillar layer 220 is formed by electroplating (Electrolytic Plating) technology, but is not limited thereto. The pillar layer 220 includes at least one conductive pillar formed on the trace corresponding to the first conductive layer 200 and the wafer holder. The material of the pillar layer 220 may be metal, such as copper.

Step S514, as shown in FIG. 7G, the fourth photoresist layer 340 and the fifth photoresist layer 350 are removed to form a first dielectric layer 410 on the second side 304 of the metal carrier 300 to form the first wiring layer 200. On the second side 302 of the metal carrier 300, wherein the first dielectric layer 410 is disposed in a portion of the first wiring layer 200, the first dielectric layer 410 is not lower than the first wiring layer 200, and the pillar is formed. The layer 220 is on the first wire layer 200, wherein the pillar layer 220 and the first wire layer 200 form a concave structure 222.

Step S516, as shown in FIG. 7H, a passive component 230 is provided and electrically connected to the first wire layer 200 in the concave structure 222.

Step S518, as shown in FIG. 7I, forming a first sealing layer 240 covering the first dielectric layer 410, the first wiring layer 200, the passive component 230, the pillar layer 220 and the second side 304 of the metal carrier 300 . In this embodiment, the first sealant layer 240 is formed by a transfer molding technique, and the material of the first sealant layer 240 may include a phenolic resin (Novolac-Based Resin), an epoxy resin. (Epoxy-Based Resin), Silicone-Based Resin or other suitable coating agent, covering the first dielectric layer 410, the first wiring layer 200, and the passive component in a liquid state under high temperature and high pressure. 230 and pillar layer 220, which forms a first sealant layer 240 after curing. The first adhesive layer 240 may also include a suitable filler such as powdered cerium oxide.

In another embodiment, the first encapsulation layer 240 may also be formed using an injection molding or compression molding technique.

The step of forming the first sealant layer 240 may include: providing a coating agent, wherein the coating agent has a resin and powdered cerium oxide. The coating agent is heated to a liquid state. Injecting a liquid coating agent onto the second side 304 of the metal carrier 300, the coating agent coating the first dielectric layer 410, the first wiring layer 200, and the high temperature and high pressure The moving element 230 and the pillar layer 220. The coating agent is cured to form the first sealing layer 240, but the step of forming the first sealing layer 240 is not limited thereto.

In step S520, as shown in FIG. 7J, one end 226 of the pillar layer 220 is exposed. In the present embodiment, the exposed pillar layer 220 is subjected to a Grinding method to remove a portion of the first sealant layer 240 to expose one end 226 of the pillar layer 220. Preferably, but not limited to, one end 226 of the pillar layer 220 is substantially aligned with the first sealant layer 240, such as coplanar. In another embodiment, one end 226 of the pillar layer 220 may be exposed while forming the first sealant layer 240 without removing any portion of the first sealant layer 240.

Step S522, as shown in FIG. 7K, a second wire layer 250 is formed on one end 226 of the first sealant layer 240 and the exposed pillar layer 220. In one embodiment, the second wire layer 250 can be formed by using an electroless plating technique, a sputtering technique, or a thermal coating technique, but is not limited thereto. The second wire layer 250 may be a patterned wire layer including at least one trace and formed on one end 226 corresponding to the exposed pillar layer 220. The material of the second wire layer 250 may be metal, such as copper.

Step S524, as shown in FIG. 7L, a solder resist layer 260 is formed on the first sealant layer 240 and the second wire layer 250, and a portion of the second wire layer 250 is exposed. Wherein, the solder resist layer 260 has the effect of insulating the electrical properties of the traces of the second wire layer 250.

Step S526, as shown in FIG. 7M, a portion of the metal carrier 300 is removed to form a window 306, wherein the first conductive layer 200 and the first dielectric layer 410 are exposed from the window 306. In this embodiment, part of the removal of the metal carrier 300 is achieved by applying a lithography process and an etching technique. The traces and wafer holders of the first wiring layer 200 may also be exposed from the window 306. In addition, the metal carrier 300 is provided. A portion of the area left is formed as a metal layer 210.

Step S528, as shown in FIG. 7N, an external component 270 is disposed and electrically connected to the first surface 202 of the first wire layer 200. In an embodiment, the external component 270 is an active component, a passive component, a semiconductor chip, or a flexible circuit board, but is not limited thereto.

Step S530, as shown in FIG. 7O, forming a second sealant layer 280 covering the outside The component 270 is coupled to the first surface 202 of the first wire layer 200. In this embodiment, the second sealant layer 280 is formed by a transfer molding technique, and the second sealant layer 280 may include a phenolic resin (Novolac-Based Resin) and an epoxy resin. (Epoxy-Based Resin), Silicone-Based Resin or other suitable coating agent, covering the external component 270 and the first surface 202 of the first wire layer 200 in a liquid state under high temperature and high pressure. After curing, a second sealant layer 280 is formed. The second sealant layer 280 may also include a suitable filler such as powdered cerium oxide.

In another embodiment, the second encapsulation layer 280 can also be formed using an injection molding or compression molding technique.

Step S532, as shown in FIG. 7P, a plurality of metal balls 290 are formed on the second wire layer 250. The material of each of the metal balls 290 may be a metal such as copper.

Step S534, as shown in FIG. 7Q, finally performing the cutting process C on at least the first wire layer 200, the metal layer 210, the pillar layer 220, the first sealant layer 240, the second wire layer 250, or the solder resist layer 260. One of the layers forms a package device 40 as shown in FIG.

It should be particularly noted that the packaging device 40 of the second embodiment of the present invention replaces the first photoresist layer with the first dielectric layer compared to the packaging device 20 of the first embodiment of the present invention, thereby reducing two The secondary dry film pressing process and the one-time stripping process are used to avoid the risk caused by the uncleaning process. In addition, when the first sealant layer is formed, since the line gap between the first wire layers is filled by the first dielectric layer, the line due to insufficient filling of the first sealant layer can be reduced. The risk of voiding in the gap.

FIG. 8 is a schematic diagram of a packaging device according to a third embodiment of the present invention. The package device 60 is substantially similar to the structure of the package device 40 of the second embodiment of the present invention, and includes a first wire layer 200, a metal layer 210, a first dielectric layer 410, and a second dielectric layer 610. A conductor layer 620, a pillar layer 220, a passive component 230, a first sealant layer 240, a second conductor layer 250, and a solder resist layer 260. The first wire layer 200 has a first surface 202 and a second surface 204 opposite to each other. The metal layer 210 is disposed on the first surface 202 of the first wire layer 200. First dielectric layer 410 is set In a partial region of the first wire layer 200, wherein the first dielectric layer 410 is not exposed on the first surface 202 of the first wire layer 200, and the first dielectric layer 410 is not lower than the second layer of the first wire layer 200 Surface 204. The second dielectric layer 610 is disposed on the first dielectric layer 410. The pillar layer 220 is disposed on the conductor layer 620 and forms a concave structure 222 with the conductor layer 620. The passive component 230 is disposed and electrically coupled to the second surface 204 of the first wire layer 200 within the concave structure 222. The first adhesive layer 240 is disposed in the second dielectric layer 610 , the conductor layer 620 and the partial region 224 of the pillar layer 220 , and covers the passive component 230 , wherein the first sealant layer 240 is not exposed to the pillar layer 220 . One end 226. In the present embodiment, the first sealant layer 240 is disposed in the entire area of the second dielectric layer 610, the conductor layer 620, and the pillar layer 220, but is not limited thereto. In addition, the first sealant layer 240 has a phenolic resin (Novolac-Based Resin), an epoxy resin (Epoxy-Based Resin), a Silicone-Based Resin or other suitable coating agent, but Not limited to this. The second wire layer 250 is disposed on one end 226 of the first sealant layer 240 and the pillar layer 220. The solder resist layer 260 is disposed on the first sealant layer 240 and the second wire layer 250.

The packaging device 60 further includes an external component 270, a second sealing layer 280, and a plurality of metal balls 290. The external component 270 is disposed and electrically coupled to the first surface 202 of the first wire layer 200. The second sealant layer 280 is disposed on the first surface 202 of the external component 270 and the first wire layer 200. A plurality of metal balls 290 are disposed on the second wire layer 250. In an embodiment, the external component 270 is an active component, a passive component, a semiconductor chip, or a flexible circuit board, but is not limited thereto.

9 is a flow chart of a method for fabricating a package device according to a third embodiment of the present invention, and FIGS. 10A to 10R are schematic views showing the manufacture of a package device according to a third embodiment of the present invention. The manufacturing method 70 of the packaging device 60 includes the following steps:

Step S702, as shown in FIG. 10A, provides a metal carrier 300 having a first side 302 and a second side 304.

Step S704, as shown in FIG. 10B, a first dielectric layer 410 is formed on the second side 304 of the metal carrier 300 and a sixth photoresist layer 360 on the first side 302 of the metal carrier. In this embodiment, the first dielectric layer 410 is applied by a coating process. The photolithography layer and the Etch process are formed, and the sixth photoresist layer 360 is formed by using a dry film photoresist process, but is not limited thereto.

Step S706, as shown in FIG. 10C, a first conductive layer 200 is formed on the second side 304 of the metal carrier 300, wherein the first dielectric layer 410 is disposed in a portion of the first conductive layer 200. The electrical layer 410 is not lower than the first wiring layer 200. In the present embodiment, the first wire layer 200 is formed by electroplating (Electrolytic Plating) technology, but is not limited thereto. The first wire layer 200 may be a patterned wire layer including at least one trace and at least one wafer holder. The material of the first wire layer 200 may be metal, such as copper.

Step S708, as shown in FIG. 10D, a second dielectric layer 610 is formed on the first dielectric layer 410. In this embodiment, the second dielectric layer 610 is formed by a coating process, and then formed by a photolithography process and an etching process (Etch Process), but is not limited thereto.

Step S710, as shown in FIG. 10E, a seventh photoresist layer 370 is formed on the first dielectric layer 410 and the first wiring layer 200, wherein the second dielectric layer 610 is not lower than the seventh photoresist layer 370. In this embodiment, the seventh photoresist layer 370 is formed by using a photolithography technique, but is not limited thereto.

Step S712, as shown in FIG. 10F, a conductor layer 620 is formed on the first wiring layer 200, wherein the second dielectric layer 610 is not lower than the conductor layer 620. In the present embodiment, the conductor layer 620 is formed by electroplating (Electrolytic Plating) technology, but is not limited thereto. The material of the conductor layer 620 may be metal, such as copper.

Step S714, as shown in FIG. 10G, an eighth photoresist layer 380 is formed on the second dielectric layer 610, the seventh photoresist layer 370, and the conductor layer 620. In the embodiment, the eighth photoresist layer 380 is formed by using a dry film photoresist process, but is not limited thereto. Step S716, as shown in FIG. 10H, a portion of the eighth photoresist layer 380 is removed to expose the conductor layer 620. In this embodiment, the removal of a portion of the eighth photoresist layer 380 is achieved by using a photolithography technique, but is not limited thereto.

Step S718, as shown in FIG. 10I, forming a pillar layer 220 on the conductor layer 620. on. In the present embodiment, the pillar layer 220 is formed by electroplating (Electrolytic Plating) technology, but is not limited thereto. The pillar layer 220 includes at least one conductive pillar formed on the trace corresponding to the conductor layer 620 and the wafer holder. The material of the pillar layer 220 may be metal, such as copper.

Step S720, as shown in FIG. 10J, removing the sixth photoresist layer 360, the seventh photoresist layer 370, and the eighth photoresist layer 380 to form the first dielectric layer 410 on the second side 304 of the metal carrier 300. Forming a first wire layer 200 on the second side 304 of the metal carrier 300, wherein the first dielectric layer 410 is disposed in a portion of the first wire layer 200, and the first dielectric layer 410 is not lower than the first wire The second dielectric layer 610 is formed on the first dielectric layer 410, and a conductive layer 620 is formed on the first conductive layer 200, and a pillar layer 220 is formed on the conductive layer 620, wherein the pillar layer 220 is Conductor layer 620 forms a concave structure 222.

Step S722, as shown in FIG. 10K, a passive component 230 is provided and electrically connected to the first wire layer 200 in the concave structure 222.

Step S724, as shown in FIG. 10L, forming a first sealing layer 240 to cover the first dielectric layer 410, the second dielectric layer 610, the first wiring layer 200, the conductor layer 620, the passive component 230, and the pillar layer 220 and the second side 304 of the metal carrier 300. In this embodiment, the first sealant layer 240 is formed by a transfer molding technique, and the material of the first sealant layer 240 may include a phenolic resin (Novolac-Based Resin), an epoxy resin. (Epoxy-Based Resin), Silicone-Based Resin or other suitable coating agent, covering the first dielectric layer 410, the second dielectric layer 610, and the liquid state under high temperature and high pressure A wire layer 200, a conductor layer 620, a passive component 230 and a pillar layer 220 are cured to form a first sealant layer 240. The first adhesive layer 240 may also include a suitable filler such as powdered cerium oxide.

In another embodiment, the first encapsulation layer 240 may also be formed using an injection molding or compression molding technique.

The step of forming the first sealant layer 240 may include: providing a coating agent, wherein the coating agent has a resin and powdered cerium oxide. The coating agent is heated to a liquid state. Injecting a coating agent in a liquid state on the second side 304 of the metal carrier 300, The coating coats the first dielectric layer 410, the second dielectric layer 610, the first wiring layer 200, the conductor layer 620, the passive component 230, and the pillar layer 220 under high temperature and high pressure. The coating agent is cured to form the first sealing layer 240, but the step of forming the first sealing layer 240 is not limited thereto.

Step S726, as shown in FIG. 10M, exposes one end 226 of the pillar layer 220. In the present embodiment, the exposed pillar layer 220 is subjected to a Grinding method to remove a portion of the first sealant layer 240 to expose one end 226 of the pillar layer 220. Preferably, but not limited to, one end 226 of the pillar layer 220 is substantially aligned with the first sealant layer 240, such as coplanar. In another embodiment, one end 226 of the pillar layer 220 may be exposed while forming the first sealant layer 240 without removing any portion of the first sealant layer 240.

Step S728, as shown in FIG. 10N, a second wire layer 250 is formed on one end 226 of the first sealant layer 240 and the exposed pillar layer 220. In one embodiment, the second wire layer 250 can be formed by using an electroless plating technique, a sputtering technique, or a thermal coating technique, but is not limited thereto. The second wire layer 250 may be a patterned wire layer including at least one trace and formed on one end 226 corresponding to the exposed pillar layer 220. The material of the second wire layer 250 may be metal, such as copper.

Step S730, as shown in FIG. 10O, a solder resist layer 260 is formed on the first sealant layer 240 and the second wire layer 250, and a portion of the second wire layer 250 is exposed. Wherein, the solder resist layer 260 has the effect of insulating the electrical properties of the traces of the second wire layer 250.

Step S732, as shown in FIG. 10P, a portion of the metal carrier 300 is removed to form a window 306, wherein the first conductive layer 200 and the first dielectric layer 410 are exposed from the window 306. In this embodiment, part of the removal of the metal carrier 300 is achieved by applying a lithography process and an etching technique. The traces and wafer holders of the first wiring layer 200 may also be exposed from the window 306. In addition, the metal carrier 300 is provided. A portion of the area left is formed as a metal layer 210.

Step S734, as shown in FIG. 10Q, an external component 270 is disposed and electrically connected to the first surface 202 of the first wire layer 200. In an embodiment, the external component 270 is an active component, a passive component, a semiconductor wafer or a soft device. Sex board, but not limited to this.

Step S736, as shown in FIG. 10R, a second encapsulation layer 280 is formed on the first surface 202 of the external component 270 and the first wiring layer 200. In this embodiment, the second sealant layer 280 is formed by a transfer molding technique, and the second sealant layer 280 may include a phenolic resin (Novolac-Based Resin) and an epoxy resin. (Epoxy-Based Resin), Silicone-Based Resin or other suitable coating agent, covering the external component 270 and the first surface 202 of the first wire layer 200 in a liquid state under high temperature and high pressure. After curing, a second sealant layer 280 is formed. The second sealant layer 280 may also include a suitable filler such as powdered cerium oxide.

In another embodiment, the second encapsulation layer 280 can also be formed using an injection molding or compression molding technique.

Step S738, as shown in FIG. 10S, a plurality of metal balls 290 are formed on the second wire layer 250. The material of each of the metal balls 290 may be a metal such as copper.

Step S740, as shown in FIG. 10T, finally performing the cutting process C on the first wire layer 200, the metal layer 210, the pillar layer 220, the first sealant layer 240, the second wire layer 250, or the solder resist layer 260, etc. One of the layers forms a package device 60 as shown in FIG.

It is to be noted that the packaging device 60 of the third embodiment of the present invention has a conductor layer structure added to reduce the height and process difficulty of the electroplated pillar layer compared to the packaging device 40 of the second embodiment of the present invention. In addition, the thickness of the first sealant layer and the thickness of the first sealant layer can be reduced, which makes the production simpler and cost-effective.

In summary, the packaging device of the first embodiment of the present invention replaces the expensive conventional glass fiber substrate with the first sealing material as the main material of the coreless substrate, and the two metal layers are used at a lower cost. The electroplating guide layer process replaces the expensive traditional four-layer metal layer laser blind buried hole process, so the processing time is short and the process is simple, which can greatly reduce the production cost.

Furthermore, the packaging device of the second embodiment of the present invention replaces the first photoresist layer with the first dielectric layer, thereby reducing the two dry film bonding processes and the one-time film removal process. Cheng, to avoid the risk caused by the unclean process. In addition, when the first sealant layer is formed, since the line gap between the first wire layers is filled by the first dielectric layer, the line due to insufficient filling of the first sealant layer can be reduced. The risk of voiding in the gap.

In addition, the packaging device of the third embodiment of the present invention further adds a conductor layer structure to reduce the height of the electroplated pillar layer and the process difficulty. In addition, the thickness of the first sealant layer and the thickness of the first sealant layer can be reduced, which makes the production simpler and cost-effective.

However, the specific embodiments described above are merely used to exemplify the features and functions of the present invention, and are not intended to limit the scope of the present invention, and may be applied without departing from the spirit and scope of the present invention. Equivalent changes and modifications made to the disclosure of the present invention are still covered by the scope of the following claims.

20‧‧‧Package

200‧‧‧First wire layer

202‧‧‧ first surface

204‧‧‧Second surface

210‧‧‧metal layer

220‧‧‧ Guide column

222‧‧‧ concave structure

224‧‧‧Partial areas

226‧‧‧ one end of the guide column

230‧‧‧ Passive components

240‧‧‧First adhesive layer

250‧‧‧Second wire layer

260‧‧‧ solder mask

270‧‧‧External components

280‧‧‧Second sealant

290‧‧‧metal ball

Claims (21)

A manufacturing method of a packaging device, comprising: providing a metal carrier having a first side and a second side; forming a first wire layer on the second side of the metal carrier; forming a pillar layer is formed on the first wire layer, wherein the pillar layer and the first wire layer form a concave structure; a passive component is disposed and electrically connected to the first wire layer in the concave structure; Forming a first sealant layer covering the first wire layer, the passive component, the pillar layer and the second side of the metal carrier; exposing one end of the pillar layer; forming a second wire layer thereon a first adhesive layer and one of the exposed pillar layers; forming a solder resist layer on the first sealant layer and the second conductor layer; and removing a portion of the metal carrier to form a window The first wire layer and the first sealing layer are exposed from the window; wherein the step of forming the pillar layer on the first wire layer comprises: forming a first photoresist layer on the metal carrier The second side surface and a second photoresist layer on the metal Forming the first wire layer on the second side of the metal carrier; forming a third photoresist layer on the first photoresist layer and the first wire layer; removing the a portion of the third photoresist layer to expose the first wire layer; forming a pillar layer on the first wire layer; and removing the first photoresist layer, the second photoresist layer and the third light Resistance layer. The manufacturing method of claim 1, further comprising: providing an external component and electrically connecting to the first surface of the first wire layer; forming a second sealing layer covering the An external component and the first surface of the first wire layer; and a plurality of metal balls are formed on the second wire layer. The manufacturing method of claim 1, wherein the step of forming the first sealant layer comprises: providing a coating agent, wherein the coating agent has a resin and powdered cerium oxide; heating the coating a coating to a liquid state; injecting the coating agent in a liquid state on the second side of the metal carrier, the coating agent coating the first wire layer, the passive component and the pillar layer under high temperature and high pressure And curing the coating agent to form the first encapsulant layer. The manufacturing method of claim 2, wherein the external component is an active component, a passive component, a semiconductor wafer or a flexible circuit board. The manufacturing method according to claim 1, wherein the first sealant layer has a phenolic resin (Novolac-Based Resin), an epoxy resin (Epoxy-Based Resin), and a sulfhydryl resin (Silicone- Based on Resin) or other suitable coating agents. A method for fabricating a package device, comprising: providing a metal carrier having a first side and a second side; forming a first dielectric layer on the second side of the metal carrier; Forming a first wire layer on the second side of the metal carrier, wherein the first dielectric layer is disposed in a portion of the first wire layer, the first dielectric layer is not lower than the first wire Forming a pillar layer on the first wire layer, wherein the pillar layer and the first wire layer form a concave structure; providing a passive component and electrically connecting the first wire in the concave structure Forming a first sealant layer covering the first dielectric layer, the first wire layer, the passive component, the pillar layer and the second side of the metal carrier; exposing the pillar layer Forming a second wire layer on the first sealant layer and one end of the exposed pillar layer; forming a solder resist layer on the first sealant layer and the second wire layer; A portion of the metal carrier is removed to form a window, wherein the first conductive layer and the first dielectric layer are exposed from the window. The manufacturing method of claim 6, further comprising: providing an external component and electrically connecting to the first surface of the first wire layer; forming a second sealing layer covering the An external component and the first surface of the first wire layer; and a plurality of metal balls are formed on the second wire layer. The manufacturing method of claim 6, wherein the step of forming the pillar layer on the first wire layer comprises: forming the first dielectric layer on the second side of the metal carrier a fourth photoresist layer is disposed on the first side of the metal carrier; the first conductive layer is formed on the second side of the metal carrier, wherein the first dielectric layer is disposed on the first conductive layer a portion of the region is formed on the first dielectric layer and the first wire layer; removing a portion of the fifth photoresist layer to expose the first wire layer; forming a pillar Laminating on the first wire layer; and removing the fourth photoresist layer and the fifth photoresist layer. The manufacturing method of claim 6, wherein the step of forming the first sealant layer comprises: providing a coating agent, wherein the coating agent has a resin and powdered cerium oxide; heating the coating a coating to a liquid state; injecting the coating agent in a liquid state on the second side of the metal carrier, the coating agent coating the first dielectric layer, the first wiring layer, and the high temperature and high pressure a passive component and the pillar layer; and curing the coating agent to form the first sealant layer. The manufacturing method of claim 7, wherein the external component is an active component, a passive component, a semiconductor wafer or a flexible circuit board. The manufacturing method according to claim 6, wherein the first sealant layer has a phenolic resin (Novolac-Based Resin), an epoxy resin. (Epoxy-Based Resin), Silicone-Based Resin or other suitable coating agents. A package device comprising: a first wire layer having a first surface and a second surface; a metal layer disposed on the first surface of the first wire layer; An electrical layer disposed in a portion of the first wire layer, wherein the first dielectric layer is not exposed on the first surface of the first wire layer, and the first dielectric layer is not lower than the first wire a second surface of the layer; a second dielectric layer disposed on the first dielectric layer; a conductor layer disposed on the first wire layer; and a pillar layer disposed on the conductor layer And forming a concave structure with the conductor layer; a passive component disposed and electrically coupled to the second surface of the first wire layer in the concave structure; a first sealant layer disposed on a portion of the second dielectric layer, the conductor layer and the pillar layer, and covering the passive component, wherein the first sealant layer is not exposed at one end of the pillar layer; a second conductor layer, And disposed on one end of the first sealant layer and the pillar layer; and a solder resist layer, the setting thereof The first encapsulation layer and the second conductive layer. The package device of claim 12, further comprising: an external component disposed on the first surface of the first wire layer; and a second sealing layer disposed on the first sealing layer The external component and the first surface of the first wire layer; and a plurality of metal balls disposed on the second wire layer. The package device of claim 13, wherein the external component is an active component, a passive component, a semiconductor wafer or a flexible circuit board. The packaging device according to claim 12, wherein the first sealant layer has a phenolic resin (Novolac-Based Resin), an epoxy resin. (Epoxy-Based Resin), Silicone-Based Resin or other suitable coating agents. A method for fabricating a package device, comprising: providing a metal carrier having a first side and a second side; forming a first dielectric layer on the second side of the metal carrier; Forming a first wire layer on the second side of the metal carrier, wherein the first dielectric layer is disposed in a portion of the first wire layer, the first dielectric layer is not lower than the first wire Forming a second dielectric layer on the first dielectric layer; forming a conductor layer on the first wire layer; forming a pillar layer on the conductor layer, wherein the pillar layer and the conductor layer Forming a concave structure; providing a passive component and electrically connecting to the first wire layer in the concave structure; forming a first sealing layer covering the first dielectric layer, the second dielectric layer, The first wire layer, the conductor layer, the passive component, the pillar layer and the second side of the metal carrier; exposing one end of the pillar layer; forming a second wire layer on the first sealant layer And exposing one end of the pillar layer; forming a solder resist layer on the first sealant layer The second wire layer; and removing the metal of the partial area of the carrier plate to form a window, wherein the first conductor layer and the first dielectric layer is exposed from the window. The manufacturing method of claim 16, further comprising: providing an external component and electrically connecting to the first surface of the first wire layer; forming a second sealing layer covering the An external component and the first surface of the first wire layer; and a plurality of metal balls are formed on the second wire layer. The manufacturing method of claim 16, wherein the pillar layer is formed The previous step on the conductor layer includes: forming the first dielectric layer on the second side of the metal carrier and a sixth photoresist layer on the first side of the metal carrier; forming the first The wire layer is disposed on the second side of the metal carrier, wherein the first dielectric layer is disposed in a portion of the first wire layer, the first dielectric layer is not lower than the first wire layer; a second dielectric layer is formed on the first dielectric layer; a seventh photoresist layer is formed on the first dielectric layer and the first conductive layer, wherein the second dielectric layer is not lower than the seventh light a resist layer; forming a conductor layer on the first wire layer, wherein the second dielectric layer is not lower than the conductor layer; forming an eighth photoresist layer on the second dielectric layer, the seventh photoresist layer And the conductor layer; removing a portion of the eighth photoresist layer to expose the conductor layer; forming a pillar layer on the conductor layer; and removing the sixth photoresist layer, the seventh photoresist layer And the eighth photoresist layer. The manufacturing method of claim 16, wherein the step of forming the first sealant layer comprises: providing a coating agent, wherein the coating agent has a resin and powdered cerium oxide; heating the coating a coating to a liquid state; injecting the coating agent in a liquid state on the second side of the metal carrier, the coating agent coating the first dielectric layer, the second dielectric layer under high temperature and high pressure, The first wire layer, the conductor layer, the passive component and the pillar layer; and curing the coating agent to form the first sealant layer. The manufacturing method of claim 17, wherein the external component is an active component, a passive component, a semiconductor wafer or a flexible circuit board. The manufacturing method according to claim 16, wherein the first sealant layer has a phenolic resin (Novolac-Based Resin), an epoxy resin (Epoxy-Based Resin), and a sulfhydryl resin (Silicone- Based on Resin) or other suitable coating agents.