TWI536597B - A low cost, suitable for mass production of back contact with the battery production methods - Google Patents
A low cost, suitable for mass production of back contact with the battery production methods Download PDFInfo
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- TWI536597B TWI536597B TW103114498A TW103114498A TWI536597B TW I536597 B TWI536597 B TW I536597B TW 103114498 A TW103114498 A TW 103114498A TW 103114498 A TW103114498 A TW 103114498A TW I536597 B TWI536597 B TW I536597B
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000009792 diffusion process Methods 0.000 claims description 31
- 238000004140 cleaning Methods 0.000 claims description 12
- 239000010410 layer Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 8
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 8
- 238000007650 screen-printing Methods 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 229910019213 POCl3 Inorganic materials 0.000 claims description 4
- 229910004286 SiNxOy Inorganic materials 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 239000012188 paraffin wax Substances 0.000 claims description 3
- 229910015845 BBr3 Inorganic materials 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000969 carrier Substances 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims description 2
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
- 239000011147 inorganic material Substances 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 229920006267 polyester film Polymers 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 238000005215 recombination Methods 0.000 claims description 2
- 230000006798 recombination Effects 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000004080 punching Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 21
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 238000005553 drilling Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011031 large-scale manufacturing process Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910017107 AlOx Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Description
本發明係一種背接觸電池生產方法，特別係應用於太陽電池的生產製造。 The invention is a method for producing a back contact battery, in particular for the production of a solar cell.
如第1圖所示，現有的常規太陽電池在正反兩面各有2-4根銀主柵線作為正負電極，這些主柵線不僅引起了較多的銀漿消耗，同時因為遮擋入射光造成了電池效率的下降。而背接觸太陽電池是透過特殊的設計將常規電池正面的銀柵線移到背面，有效降低了銀柵線遮擋而引起的功率損失，提高了入射太陽光的利用率和電池的光電轉化效率。現在背接觸電池中一個比較容易實現的方法就是所謂的金屬穿孔纏繞結構，採用導電材料將電池正面產生的電流透過孔洞引到背面，典型的例子如荷蘭國家能源研究中心(ECN)研製開發的MWT電池，如第2圖所示，電池的正面細柵彙聚的電流透過孔洞內的銀漿引到背面。其工藝步驟如下：鐳射打孔、清洗制絨、雙面擴散製備pn結、去磷矽玻璃、製備減反射膜、絲網印刷電極、烘乾燒結、鐳射絕緣隔離周邊和孔洞、測試分選。 As shown in Fig. 1, the conventional conventional solar cell has 2-4 silver main gate lines as positive and negative electrodes on the front and back sides, and these main gate lines not only cause more silver paste consumption, but also block incident light. The battery efficiency has dropped. The back contact solar cell moves the silver grid line on the front side of the conventional battery to the back through a special design, which effectively reduces the power loss caused by the blockage of the silver grid line, improves the utilization of incident sunlight and the photoelectric conversion efficiency of the battery. One of the easier ways to implement a back contact battery is the so-called metal perforated winding structure, which uses a conductive material to direct the current generated by the front of the battery through the hole to the back. Typical examples are the MWT developed by the National Energy Research Center (ECN) of the Netherlands. The battery, as shown in Fig. 2, the current concentrated by the front side of the cell is led to the back through the silver paste in the hole. The process steps are as follows: laser drilling, cleaning and texturing, double-sided diffusion to prepare pn junction, dephosphorization glass, preparation of anti-reflection film, screen printing electrode, drying and sintering, laser insulation isolation perimeter and hole, and test sorting.
和常規太陽電池相比，以上的MWT電池增加了鐳射打孔和絕緣隔離兩道工序，同時需要將單面擴散改成雙面擴散，由 此需要增加一倍數量的擴散爐，這些增加的設備和工序顯著提高了產線的投資和生產的成本，並不適合低成本規模化生產的需要，這也是目前該技術產業化較慢的重要原因。 Compared with conventional solar cells, the above MWT batteries have increased the number of processes of laser drilling and insulation isolation, and it is necessary to change the single-sided diffusion to double-sided diffusion. This requires a doubling of the number of diffusion furnaces. These increased equipment and processes significantly increase the investment and production costs of the production line, and are not suitable for low-cost and large-scale production. This is also an important reason for the slow industrialization of the technology. .
針對現有技術工藝步驟複雜、設備投入和生產成本偏高的問題，本發明提供一種增加設備少、工藝簡單的背接觸電池生產方法，適合低成本、大產能的規模化生產的需求。 In view of the problems of complicated process steps, high equipment investment and high production cost in the prior art, the present invention provides a method for producing a back contact battery with less equipment and simple process, and is suitable for large-scale production with low cost and large capacity.
一種低成本、適合規模化量產的背接觸電池生產方法，只使用一道鐳射工序(鐳射打孔)，採取常規的單面擴散，孔洞附近採取特殊的防漏電保護措施，其他工序都和常規電池一致，工藝簡單、增加設備投入低，同時產品性能和成品率優於現有方案。 A low-cost, large-scale mass production of back contact battery production method, using only one laser process (laser drilling), adopting conventional single-sided diffusion, adopting special anti-leakage protection measures near the hole, and other processes and conventional batteries Consistent, simple process, low equipment investment, and superior product performance and yield over existing solutions.
具體的方法如下步驟：(1)使用鐳射器在晶體矽片上開孔；(2)對打孔後的矽片進行前清洗與制絨，去除矽片表面和孔洞內的損傷層，降低光生載流子的複合速率，同時在矽片表面製成絨面降低反射率；(3)在上述矽片襯底澱積摻雜源並進行擴散製備PN結，矽片採取常規的背靠背的方式插在擴散爐的石英卡槽裡進行摻雜源擴散；常用的擴散源包括POCl3(針對P型矽片)和BBr3(針對N型矽片)；(4)在太陽能電池的背表面，以孔洞為中心製備一層絕緣保護層； (5)後清洗，去除太陽能電池周邊及背面未被保護的背結，去磷矽玻璃；(6)在太陽能電池的正面蒸鍍減反射膜；(7)採用絲網印刷的方法印刷正面和背面電極；(8)烘乾、燒結或者退火以形成良好的歐姆接觸。 The specific method is as follows: (1) using a laser to open a hole in the crystal cymbal; (2) pre-cleaning and texturing the punctured cymbal to remove the damaged layer on the surface of the cymbal and the hole, reducing the photogeneration The recombination rate of the carriers, while the surface of the ruthenium is made into a suede to reduce the reflectivity; (3) depositing a doping source on the ruthenium substrate and performing diffusion to prepare a PN junction, and the cymbal is inserted in a conventional back-to-back manner Doping source diffusion in the quartz card slot of the diffusion furnace; commonly used diffusion sources include POCl3 (for P-type cymbals) and BBr3 (for N-type cymbals); (4) on the back surface of solar cells, with holes Preparing a layer of insulating protective layer at the center; (5) After cleaning, remove the unprotected back junction of the solar cell and the back side, and remove the antimony glass; (6) evaporate the anti-reflection film on the front side of the solar cell; (7) print the front side by screen printing The back electrode; (8) is dried, sintered or annealed to form a good ohmic contact.
需要說明的是：在步驟(3)的擴散環節，採用了現有成熟的背靠背單面擴散工藝，在單面擴散的過程中，部分的擴散源會從孔洞中擴散到背表面，擴散的範圍為直徑10mm左右，透過步驟(4)的保護掩膜(絕緣保護層)可以保留孔洞和周邊部分PN結，防止漏電。 It should be noted that in the diffusion step of step (3), the existing mature back-to-back single-side diffusion process is adopted, and in the process of single-sided diffusion, part of the diffusion source will diffuse from the hole to the back surface, and the diffusion range is With a diameter of about 10 mm, the protective mask (insulating protective layer) of step (4) can retain the hole and the peripheral portion of the PN junction to prevent leakage.
進一步地，步驟(4)中絕緣保護層的厚度為1~10μm，保護層的材料是耐酸鹼性的有機或無機材料，製備方法包括絲網印刷、噴墨列印和鍍膜等方式。 Further, the thickness of the insulating protective layer in the step (4) is 1 to 10 μm, and the material of the protective layer is an acid- or alkaline-resistant organic or inorganic material, and the preparation methods include screen printing, inkjet printing, and coating.
另外，對步驟(4)還需要說明的是，推薦的絕緣保護材料是石蠟和聚酯薄膜等抗酸鹼性材料。這層絕緣保護也可以放在步驟(6)鍍膜工序中同時進行，因為現在的部分常規電池也開始採取正反兩面鍍膜的方式，透過調整電池反面鍍膜的類型和厚度同樣可以起到孔洞附近絕緣保護的作用。 In addition, it should be noted in the step (4) that the recommended insulating protective material is an acid-resistant alkaline material such as paraffin wax or polyester film. This layer of insulation protection can also be placed in the step (6) coating process at the same time, because some of the conventional batteries are now also adopting the method of coating on both sides of the front and back. By adjusting the type and thickness of the coating on the reverse side of the battery, it is also possible to provide insulation near the hole. The role of protection.
進一步地，步驟(6)中推薦使用氮化矽薄膜作為太陽能電池的正面蒸鍍減反射膜，可以備選的使用具有大的折射率，具有與矽處理的相容性且與矽有良好介面特性的其他材料(如可見光透明的介電材料，包括但不局限於TiO2或Al2O3、SiNxCy或SiNxOy等)；其中，SiNxCy之x係為0<x<1.33，y係為0<y<1.0， 而SiNxOy之x係為0<x<1.33，y係為0<y<2.0。 Further, in the step (6), it is recommended to use a tantalum nitride film as the front side vapor-deposited anti-reflection film of the solar cell, which may alternatively have a large refractive index, has compatibility with ruthenium treatment, and has a good interface with ruthenium. Other materials of characteristics (such as visible light transparent dielectric materials, including but not limited to TiO2 or Al2O3, SiNxCy or SiNxOy, etc.); wherein, the xN of the SiNxCy is 0<x<1.33, and the y is 0<y<1.0, The x of the SiNxOy is 0<x<1.33, and the y is 0<y<2.0.
與現有技術相比，本發明提供的低成本、適合規模化量產的背接觸電池生產方法，簡化了現有技術工藝，減少了雙面擴散和電池片周邊和孔洞附近鐳射絕緣隔離的複雜工序，也大大減少了設備的投入和生產的成本，同時減少了鐳射對電池片的損失，適合規模化的生產需要。 Compared with the prior art, the invention provides a low-cost, mass-production mass-produced back contact battery production method, which simplifies the prior art process and reduces the complicated process of double-sided diffusion and laser insulation isolation around the cell sheet and the hole. It also greatly reduces the cost of equipment investment and production, and at the same time reduces the loss of laser to the battery, suitable for large-scale production needs.
1‧‧‧電池正面主柵線電極 1‧‧‧ battery front main grid electrode
2‧‧‧電池正面細柵線 2‧‧‧Battery front fine grid line
3‧‧‧電池背面主柵線電極 3‧‧‧Battery main grid electrode on the back of the battery
4‧‧‧鋁背場 4‧‧‧Aluminum back field
21‧‧‧P型矽基片 21‧‧‧P type 矽 substrate
22‧‧‧鐳射孔洞 22‧‧‧Laser holes
23‧‧‧雙面PN結擴散層 23‧‧‧Double PN junction diffusion layer
24‧‧‧正面柵線電極 24‧‧‧Front grid electrode
25‧‧‧鋁背場 25‧‧‧Aluminum back field
26‧‧‧背電極 26‧‧‧ Back electrode
27‧‧‧鐳射絕緣隔離 27‧‧‧Laser insulation isolation
31‧‧‧P型矽基片 31‧‧‧P type 矽 substrate
32‧‧‧鐳射孔洞 32‧‧‧Laser holes
33‧‧‧PN結擴散層 33‧‧‧PN junction diffusion layer
34‧‧‧正面柵線電極 34‧‧‧Front grid electrode
35‧‧‧鋁背場 35‧‧‧Aluminum back field
36‧‧‧背電極 36‧‧‧Back electrode
41‧‧‧孔洞電極 41‧‧‧ hole electrode
42‧‧‧細柵線 42‧‧‧fine grid line
43‧‧‧背面電極 43‧‧‧Back electrode
44‧‧‧鋁背場 44‧‧‧Aluminum back field
第1圖是現有技術中常規太陽電池正反兩面平面圖。 Figure 1 is a plan view of the front and back sides of a conventional solar cell in the prior art.
第2圖是目前背接觸電池結構截面圖。 Figure 2 is a cross-sectional view of the current back contact cell structure.
第3圖是本發明所述的背接觸電池結構截面圖。 Figure 3 is a cross-sectional view showing the structure of the back contact battery of the present invention.
第4圖是本發明所述的背接觸電池正反兩面平面圖。 Fig. 4 is a plan view showing the front and back sides of the back contact battery of the present invention.
下面結合具體實施例，進一步闡明本發明，應理解這些實施例僅用於說明本發明而不用於限制本發明的範圍，在閱讀了本發明之後，本領域技術人員對本發明的各種等價形式的修改均落於本發明之申請專利範圍所限定的範圍。 The invention is further clarified by the following examples, which are to be construed as illustrative only and not to limit the scope of the invention. Modifications are within the scope defined by the scope of the invention as claimed.
透過本發明背接觸電池生產方法生產的太陽能電池如第3圖所示，在方法實施過程中，只使用一道鐳射打孔工序，採取常規的單面擴散，孔洞附近採取特殊的放漏電保護措施，其他工序都和常規電池一致，工藝簡單、增加設備投入低，同時產品性能和成品率優於現有方案，下面通過兩個具體的實施例進行說明。 The solar cell produced by the back contact battery production method of the present invention is as shown in Fig. 3. During the implementation of the method, only one laser drilling process is used, and conventional single-sided diffusion is adopted, and special leakage protection measures are taken near the hole. Other processes are consistent with conventional batteries, the process is simple, the equipment investment is increased, and the product performance and yield are superior to the existing ones. The following two specific embodiments are described.
背接觸電池生產方法，包括以下具體步驟：(1)採用太陽能級P型單晶或者多晶矽片作為襯底；(2)按照第4圖所示鐳射開孔，孔洞的形狀為圓形，直徑在0.1~0.5mm；進一步地，使用鐳射器在晶體矽片上開孔，孔洞形狀可以為圓形、方形或者錐形等，尺寸在0.05~1mm之間，孔洞的數量和分佈不限於第4圖所示；(3)使用常規化學清洗和織構化方法進行清洗和織構化；(4)使用POCl3擴散源進行高溫背靠背單面擴散，擴散方阻控制在40~120Ω/□；(5)在矽片背表面孔洞為圓心，製備直徑2~8mm的圓形石蠟掩膜，製備方法為噴墨列印法或者絲網印刷法；(6)使用化學溶液進行化學後清洗，去除周邊及背面未被有機薄層保護的背結、清洗有機薄層、去除擴散後矽襯底表面形成的磷矽玻璃；(7)用PECVD設備蒸鍍SiNx減反膜，折射率在1.9~2.1之間，膜厚在70~90nm；(8)採用絲網印刷的方法印刷背電極36、鋁背場35和正面柵線電極34；(9)在鏈式爐中進行烘乾和燒結。燒結後，正面和背面電極都形成良好的歐姆接觸。 The method for producing a back contact battery comprises the following specific steps: (1) using a solar grade P-type single crystal or a polycrystalline silicon wafer as a substrate; (2) according to the laser opening shown in FIG. 4, the shape of the hole is circular, and the diameter is 0.1~0.5mm; further, a hole is formed in the crystal cymbal by using a laser, and the shape of the hole may be circular, square or tapered, and the size is between 0.05 and 1 mm, and the number and distribution of the holes are not limited to the fourth figure. (3) cleaning and texturing using conventional chemical cleaning and texturing methods; (4) high-temperature back-to-back single-sided diffusion using a POCl3 diffusion source, with diffusion resistance controlled at 40~120 Ω/□; (5) A circular paraffin mask having a diameter of 2 to 8 mm is prepared on the back surface of the cymbal, and the preparation method is an inkjet printing method or a screen printing method; (6) chemical cleaning is performed using a chemical solution to remove the periphery and the back surface. a backing layer that is not protected by an organic thin layer, cleans the organic thin layer, and removes the phosphorous glass formed on the surface of the germanium substrate after diffusion; (7) vapor-deposits the SiNx antireflection film with a PECVD apparatus, and has a refractive index of between 1.9 and 2.1. Thickness is 70~90nm; (8) Printing backlight by screen printing 36, 35 and a front aluminum BSF gate line electrode 34; (9) in the chain by drying and sintering furnace. After sintering, both the front and back electrodes form a good ohmic contact.
本實施例中採用的多晶矽片製備的背接觸太陽電池經測試，電池的轉換效率提高了0.5%。 The back contact solar cell prepared by the polycrystalline silicon wafer used in this embodiment was tested, and the conversion efficiency of the battery was improved by 0.5%.
背接觸電池生產方法，包括以下具體步驟：(1)採用太陽能級的P型單晶或者多晶矽片作為襯底；(2)按照第4圖所示鐳射開孔，孔洞的形狀為圓形，直徑在0.1~0.5mm；(3)使用常規化學清洗和織構化方法進行清洗和織構化；(4)使用POCl3擴散源進行高溫背靠背單面擴散，擴散方阻控制在40~120Ω/□；(5)使用化學溶液進行化學後清洗，去除周邊及背面pn結、去除擴散後矽襯底表面形成的磷矽玻璃；(6)在電池片正面蒸鍍SiNx減反膜，折射率在1.9~2.1之間，膜厚在70~90nm；在電池片背面蒸鍍AlOx/SiNx疊層鈍化保護膜，AlOx厚度為5~50nm，SiNx為50~200nm，和常規背面鈍化電池製備工序一致；(7)採用絲網印刷的方法印製正面和背面電極43，和常規背面鈍化電池製備方法相同；(8)在鏈式爐中進行烘乾、燒結。燒結後，正面和背面電極43都形成良好的歐姆接觸；本實施例中採用的多晶矽片製備的背接觸太陽電池經測試，電池的轉換效率提高1%。 The method for producing a back contact battery comprises the following specific steps: (1) using a solar-grade P-type single crystal or a polycrystalline silicon wafer as a substrate; (2) according to the laser opening shown in FIG. 4, the shape of the hole is circular, and the diameter (0.1) using conventional chemical cleaning and texturing methods for cleaning and texturing; (4) using POCl3 diffusion source for high-temperature back-to-back single-sided diffusion, diffusion resistance is controlled at 40~120Ω/□; (5) chemical cleaning after chemical cleaning, removing the peripheral and back pn junctions, removing the phosphorous glass formed on the surface of the germanium substrate after diffusion; (6) vapor-depositing the SiNx anti-reflection film on the front side of the cell sheet, the refractive index is 1.9~2.1 Between the film thickness of 70~90nm; AlOx/SiNx laminated passivation protective film is deposited on the back side of the cell sheet, AlOx thickness is 5~50nm, SiNx is 50~200nm, which is consistent with the conventional back passivation cell preparation process; (7) The front and back electrodes 43 are printed by screen printing in the same manner as the conventional back passivation battery; (8) drying and sintering are carried out in a chain furnace. After sintering, both the front and back electrodes 43 form a good ohmic contact; the back contact solar cell prepared by the polycrystalline silicon wafer used in this embodiment was tested, and the conversion efficiency of the battery was increased by 1%.
1‧‧‧P型矽基片 1‧‧‧P type 矽 substrate
2‧‧‧鐳射孔洞 2‧‧‧Laser holes
3‧‧‧PN結擴散層 3‧‧‧PN junction diffusion layer
4‧‧‧正面柵線電極 4‧‧‧Front grid electrode
5‧‧‧鋁背場 5‧‧‧Aluminum back field
6‧‧‧背電極 6‧‧‧Back electrode
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