TWI400192B - Core - shell structure nanowires and their production methods - Google Patents
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本發明是有關於一種奈米線及其製作方法,特別是指一種核殼結構奈米線及其製作方法。The invention relates to a nanowire and a preparation method thereof, in particular to a core-shell structure nanowire and a preparation method thereof.
奈米線是泛稱100奈米以下、且在兩個維度受到限制的奈米材料,此時因為電子在橫向受到量子束縛能級不連續,而呈現例如非連續的電阻值等特殊的物理性質,所以在例如:奈米電子元件、奈米光元件、微形半導體元件,和奈米電機元件中,具有重要的應用,目前廣為週知的,是作為量子器械中的連線、場發射器,和生物分子奈米感應器等,而近年來由於奈米電子元件的應用,因此有關奈米結構的場發射特性的研究也越來越受到重視。The nanowire is a nanomaterial that is generally called 100 nm or less and is limited in two dimensions. At this time, since the electrons are discontinuous in the lateral direction, the quantum binding energy level is discontinuous, and special physical properties such as non-continuous resistance values are exhibited. Therefore, it has important applications in, for example, nanoelectronic components, nano-optical components, micro-semiconductor components, and nano-motor components, and is widely known as a wiring and field emitter in quantum instruments. And biomolecular nanosensors, etc., and in recent years, due to the application of nanoelectronic components, research on the field emission characteristics of nanostructures has received increasing attention.
例如「Synthesis and growth mechanism of pentagonal Cu nanobats with field emission characteristics」(J-H Wang等人;Nanotechnology 17,2006,719-722)一文中揭示了一種以有機化學氣相沉積方法(MOCVD)製得的銅奈米線,且製得的銅奈米線在電流密度(current dendity)為1μA/cm2 條件下,出現導通電場(turn-on field)為4V/μm的電子特性表現;另外,在「Field emission properties of electrochemistry deposited gold nanowires」(A.Dangwal等人;Applied Physics Letters 92,063115,2008)一文中則揭示一種以電化學(electrochemically)沉積方法製作長度為6~15μm、直徑為120~265nm金奈米線的技術,且製作出的金奈米線在電流密度為0.1μA/cm2 的條 件下,導通電場表現是4V/μm。For example, "Synthesis and growth mechanism of pentagonal Cu nanobats with field emission characteristics" (J-H Wang et al.; Nanotechnology 17, 2006, 719-722) discloses an organic chemical vapor deposition method (MOCVD). The copper nanowire and the obtained copper nanowire exhibit an electronic characteristic of a turn-on field of 4 V/μm at a current dendity of 1 μA/cm 2 ; Field emission properties of electrochemistry deposited gold nanowires" (A. Dangwal et al.; Applied Physics Letters 92, 063115, 2008) discloses an electrochemically deposited method with a length of 6-15 μm and a diameter of 120-265 nm. The technique of the gold nanowire and the produced gold nanowire have a conduction electric field of 4 V/μm under the condition of a current density of 0.1 μA/cm 2 .
由上述文獻可知,經由不同成長方法可得到的由不同材料所構成,且具有場發射特性的奈米線,但如何調控、摻雜奈米線的整體結構使其達到更佳場發射性能及如何簡化製程,大量製作具場發射性能的奈米線,使其可實際運用於元件製作,則為目前該領域者積極研究發展的方向。It can be seen from the above documents that nanowires composed of different materials and having field emission characteristics can be obtained through different growth methods, but how to regulate and dope the overall structure of the nanowires to achieve better field emission performance and how Simplify the process, and produce a large number of nanowires with field emission performance, so that it can be practically used for component production, which is the direction of active research and development in this field.
因此,本發明之目的,即在提供一種核殼結構奈米線。Accordingly, it is an object of the present invention to provide a core-shell structured nanowire.
此外,本發明之另一目的,即在提供一種核殼結構奈米線的製作方法。Further, another object of the present invention is to provide a method for producing a core-shell structured nanowire.
於是,本發明一種核殼結構奈米線是包含一凸端,及一由該凸端底部向下延伸的延伸段。Thus, a core-shell structured nanowire of the present invention comprises a convex end and an extension extending downward from the bottom of the convex end.
該凸端為由單晶結構的貴重金屬構成,該延伸段具有一線狀的核心及一圍繞於該核心的殼層,該核心為由單晶結構的貴重金屬構成,該殼層由單晶的金屬氧化物構成。The convex end is composed of a precious metal of a single crystal structure having a linear core and a shell surrounding the core, the core being composed of a precious metal of a single crystal structure, the shell being composed of a single crystal Made up of metal oxides.
另外,本發明一種核殼結構奈米線的製作方法包含以下兩步驟。In addition, the method for fabricating a core-shell structured nanowire of the present invention comprises the following two steps.
首先,將複數平均粒徑分佈均勻,且為奈米尺度範圍的貴重金屬微粒分散於一具有非晶態二氧化矽的載板上。First, the complex average particle size distribution is uniform, and the precious metal particles in the nanometer scale range are dispersed on a carrier plate having amorphous ceria.
接著,將該具有貴重金屬微粒的載板與複數高純度且融點不高於400℃的金屬粉末置於一低壓環境中,並以一預設的昇溫速率加熱到一不低於700℃的反應溫度下持溫至少15分鐘,使金屬粉末與該載板反應生成線狀的單晶金屬氧化物,且同時貴重金屬微粒自線狀之金屬氧化物一端向另一端 軸向垂流延伸形成一線狀的核心與一位於該線狀單晶金屬氧化物外的凸端,即可製得該核殼結構奈米線。本發明之功效在於:提供易於控制、製程簡便,且可大量生產製造的方法,製作具有凸端與延伸段之結構的異質核殼結構奈米線,且製得之異質核殼結構奈米線利用延伸段的殼層降低電子導通時的電子散射效應,並以凸端使經由核心導通的電流集中後而向外發出,而具有較目前之奈米線更優越的場發射特性。Next, the carrier plate with precious metal particles and a plurality of high-purity metal powders having a melting point of not higher than 400 ° C are placed in a low-pressure environment and heated to a temperature of not less than 700 ° C at a predetermined heating rate. Holding the temperature at the reaction temperature for at least 15 minutes, the metal powder is reacted with the carrier to form a linear single crystal metal oxide, and at the same time, the precious metal particles are from one end of the linear metal oxide to the other end. The axially perpendicular flow extends to form a linear core and a convex end located outside the linear single crystal metal oxide, thereby preparing the core-shell structured nanowire. The invention has the advantages of providing a method which is easy to control, simple in process, and can be mass-produced, and a heterogeneous core-shell nanowire having a structure of a convex end and an extended section, and a heterogeneous core-shell nanowire prepared. The shell layer of the extended section reduces the electron scattering effect when the electron is turned on, and concentrates the current conducted through the core with the convex end to be emitted outward, and has a superior field emission characteristic than the current nanowire.
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之一個較佳實施例的詳細說明中,將可清楚的呈現。The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments.
參閱圖1,本發明一種核殼結構奈米線的一較佳實施例為包含一凸端2,及一由該凸端2底面向下延伸的延伸段3,該延伸段3具有一線狀的核心31及一圍繞於該核心31的殼層32。Referring to Figure 1, a preferred embodiment of a core-shell nanowire of the present invention comprises a convex end 2 and an extension 3 extending downward from the bottom surface of the convex end 2, the extension 3 having a linear shape. The core 31 and a shell 32 surrounding the core 31.
該凸端2是選自金、銀等單晶結構的貴重金屬為材料所構成;該核心31是由與該凸端2相同的貴重金屬材料所構成;該殼層32是選自低融點金屬構成的金屬氧化物,例如:三氧化二鎵(Ga2 O3 )、二氧化錫(SnO2 ),或三氧化二銦(In2 O3 )。The convex end 2 is made of a precious metal selected from a single crystal structure such as gold or silver; the core 31 is composed of the same precious metal material as the convex end 2; the shell 32 is selected from a low melting point. A metal oxide composed of a metal, for example, gallium dioxide (Ga 2 O 3 ), tin dioxide (SnO 2 ), or indium trioxide (In 2 O 3 ).
當施以外加電場時,電流由該核心31導通,該圍繞於該核心31的殼層32可視為隔絕層,避免電流於該核心31導通時的電子散射效應,因此可讓產生的電流沿著該核心31集中至該凸端2而向外發出,因此,可得到極佳的場發射特 性。When an electric field is applied, the current is conducted by the core 31, and the shell 32 surrounding the core 31 can be regarded as an isolation layer, thereby avoiding the electron scattering effect when the current is turned on by the core 31, thereby allowing the generated current to follow The core 31 is concentrated to the convex end 2 and is emitted outward, so that excellent field emission is obtained. Sex.
上述核殼結構奈米線在配合以下核殼結構奈米線製作方法的一較佳實施例說明後,當可更清楚明白。The core-shell nanowires described above can be more clearly understood after being described in conjunction with a preferred embodiment of the core-shell nanowire fabrication method.
參閱圖2,首先進行步驟101,滴取含有貴重金屬微粒的溶液於一鍍有非晶態二氧化矽的矽載板上,讓溶劑揮發後,使該貴重金屬微粒均勻地佈設於該載板上,該等貴重金屬微粒的平均粒徑介於80奈米到250奈米尺度範圍,且具有類似之表面電漿共振效應(Surface Plasmon Resonance Effects,SPR Effects),較佳地,該等貴重金屬微粒是由平均粒徑為介於80~250nm的金,或銀為材料所構成。Referring to FIG. 2, step 101 is first performed, and a solution containing precious metal particles is dripped on a crucible plate coated with amorphous ceria, and after the solvent is volatilized, the precious metal particles are uniformly disposed on the carrier. The average particle size of the precious metal particles ranges from 80 nm to 250 nm, and has similar surface Plasmon Resonance Effects (SPR Effects). Preferably, the precious metals The microparticles are composed of gold having an average particle diameter of 80 to 250 nm or silver.
接著進行步驟102,將該佈設有貴重金屬顆粒之非晶態二氧化矽載板與純度不小於99.99%且熔點不高於400℃的金屬粉末置於一低壓(不大於10-2 Torr)的加熱環境中,以700℃~800℃的溫度持溫不低於15分鐘。此時,由該金屬粉末產生的蒸氣與該非晶態二氧化矽載板反應生成第一金屬氧化物,然後該第一金屬氧化物沿著該多數貴重金屬微粒與該非晶態二氧化矽載板交界的周緣,經過非均勻過飽和作用過程,轉換成呈奈米線型態之單晶金屬氧化物,形成該殼層,且同時將該貴重金屬微粒向遠離該二氧化矽載板方向推升,並讓該貴重金屬微粒向該非晶態二氧化矽載板方向垂流延伸形成該線狀的核心,殘留的貴重金屬微粒部分則形成該凸端,製得該核殼結構奈米線。Next, in step 102, the amorphous ceria carrier plate provided with the precious metal particles and the metal powder having a purity of not less than 99.99% and a melting point of not higher than 400 ° C are placed at a low pressure (not more than 10 -2 Torr). In a heated environment, the temperature is maintained at a temperature of 700 ° C to 800 ° C for not less than 15 minutes. At this time, the vapor generated by the metal powder reacts with the amorphous ceria carrier to form a first metal oxide, and then the first metal oxide is along the majority of the precious metal particles and the amorphous ceria carrier The periphery of the boundary is converted into a single crystal metal oxide in a nanowire form through a non-uniform supersaturation process to form the shell layer, and simultaneously pushes the precious metal particles away from the ceria carrier plate. And the precious metal particles are vertically extended in the direction of the amorphous ceria carrier plate to form the linear core, and the residual precious metal particle portion forms the convex end to obtain the core-shell structure nanowire.
上述本發明核殼結構奈米線的較佳實施例,在配合以下具體例的說明後,當可更加清楚的明白。The preferred embodiment of the above-described core-shell structured nanowire of the present invention will be more clearly understood in conjunction with the following description of specific examples.
在本具體例中,該貴重金屬微粒4是選自平均粒徑為200~250nm的金,滴取該含有平均粒徑為250nm的貴重金屬微粒4的溶液在一鍍有非晶態二氧化矽52的矽載板51上,待溶劑揮發後,即可使該等貴重金屬微粒4均勻地佈設於該非晶態二氧化矽52上。In this embodiment, the precious metal fine particles 4 are selected from gold having an average particle diameter of 200 to 250 nm, and the solution containing the precious metal fine particles 4 having an average particle diameter of 250 nm is dropped on an amorphous cerium oxide plate. On the crucible plate 51 of 52, after the solvent is volatilized, the precious metal particles 4 are uniformly disposed on the amorphous ceria 52.
參閱圖3、圖4,將佈設有該等貴重金屬微粒4的非晶態二氧化矽52的矽載板51,與多數純度不低於99.9999%的鎵粉末6置於石英管中,並放入加熱爐內,在真空度10-2 Torr的條件下,以20℃/min的昇溫速率加熱到800℃,接著在800℃的溫度下持溫30分鐘;此時,鎵粉末6產生的蒸氣與該非晶態二氧化矽52反應生成一氧化二鎵(4Ga(g) +SiO2(s) →2Ga2 O(g) +Si(s) ),該一氧化二鎵再進一步沿著該等貴重金屬微粒4與該非晶態二氧化矽52交界的周緣反應,形成固態三氧化二鎵的單晶金屬氧化物7(3Ga2 O(g) →Ga2 O3(s) +4Ga(s,1) ),並將該等貴重金屬微粒4向遠離該矽載板51方向堆升,該三氧化二鎵的單晶金屬氧化物7是以單晶斜方(monoclinic)堆積,形成一殼層結構並產生一雙晶界(twin boundary),同時,於此溫度下,該等貴重金屬微粒4會以類似熔融狀態,沿著該雙晶界向該非晶態二氧化矽52方向垂流延伸,逐漸形成線狀的核心結構,最後未垂流的貴重金屬微粒的殘留部分凸出於殼層結構外,即製得如圖4所示,包含有一凸端2,及一由該凸端2底面向下延伸並成一線狀的核心31,及一圍繞於該核心31之殼層32,的該核殼結構奈 米線。Referring to FIG. 3 and FIG. 4, the crucible carrier 51 of the amorphous ceria 52 provided with the precious metal particles 4 is placed in a quartz tube with a plurality of gallium powders having a purity of not less than 99.9999%, and placed in a quartz tube. Into the heating furnace, under the condition of a vacuum degree of 10 -2 Torr, heated to 800 ° C at a heating rate of 20 ° C / min, and then held at a temperature of 800 ° C for 30 minutes; at this time, the vapor generated by the gallium powder 6 Reacting with the amorphous ceria 52 to form digallium monoxide (4Ga (g) + SiO 2(s) → 2Ga 2 O (g) + Si (s) ), the gallium monoxide further along the precious metals The periphery of the boundary between the fine particles 4 and the amorphous ceria 52 forms a solid single crystal metal oxide of gallium oxide (7Ga 2 O (g) → Ga 2 O 3 (s) + 4Ga (s, 1) ) And stacking the precious metal particles 4 away from the buffer plate 51, and the single crystal metal oxide 7 of the gallium trioxide is stacked in a monoclinic form to form a shell structure and generate a twin boundary, at the same time, at this temperature, the precious metal particles 4 will be in a similar molten state along the twin boundary to the amorphous dioxygen The 垂52 direction of the vertical flow extends, gradually forming a linear core structure, and finally the remaining portion of the non-recumbent precious metal particles protrudes out of the shell structure, that is, as shown in FIG. 4, including a convex end 2, and A core 31 extending downward from the bottom surface of the convex end 2 and forming a line, and a core-shell nanowire surrounding the shell layer 32 of the core 31.
參閱圖5,圖5為該具體例的穿透式電子顯微鏡(以下簡稱TEM)的高角度環狀暗視野(HAADF)影像,由該影像分析可知,該核殼結構奈米線的核心直徑約為60~100nm,殼層直徑約為250nm,且該凸端的直徑約為100~200nm。Referring to FIG. 5, FIG. 5 is a high angle annular dark field (HAADF) image of the transmission electron microscope (hereinafter referred to as TEM) of the specific example. From the image analysis, the core diameter of the core-shell nanowire is about It is 60-100 nm, the shell diameter is about 250 nm, and the convex end has a diameter of about 100-200 nm.
參閱圖6、圖7,由該具體例的TEM影像可確知該核殼結構奈米線的結構,以及該核殼結構奈米線的凸端詳細影像。Referring to FIG. 6 and FIG. 7, the structure of the core-shell nanowire and the detailed image of the convex end of the core-shell nanowire are confirmed by the TEM image of the specific example.
參閱圖8、圖9,及附件1,圖8、圖9分別是圖6中點框標示區域的能量散射光譜(EDX)元素分析圖,以及高解析度穿透式電子顯微鏡影像,附件一則為圖8的彩色圖片,由圖8及附件一可更清楚的看到該標示區域內的氧、鎵,及金元素的分布情形,其中,氧元素以及鎵元素在殼層分布較多,而金元素則是在中間核心分布較多。由圖9中可以清楚的看到核心與殼層的高解析電子顯微鏡圖,內層核心為金元素,外面包覆著三氧化二鎵殼層Referring to Fig. 8, Fig. 9, and Annex 1, Fig. 8 and Fig. 9 are energy dispersive spectroscopy (EDX) elemental analysis diagrams of the dot-framed area in Fig. 6, and high-resolution transmissive electron microscope images, respectively. In the color picture of FIG. 8, the distribution of oxygen, gallium, and gold in the marked area can be more clearly seen from FIG. 8 and Annex I, wherein oxygen and gallium are more distributed in the shell layer, and gold is The elements are more distributed in the middle core. A high-resolution electron micrograph of the core and the shell layer can be clearly seen in Figure 9. The inner core is gold and the outer layer is covered with a gallium trioxide shell.
參閱圖10、圖11,圖10、圖11分別是為圖9的下方點框標示區域的快速傅立葉轉換(fast Fourier transformation,簡稱FFT),及反向快速傅立葉轉換(inverse fast Fourier transformation,簡稱IFFT)的分析影像圖,由圖中的微結構影像可清楚的看到沿[112]晶帶軸(zone axis)的態樣,且經鑑定後可確認殼層為單斜方晶(monoclinic)的β-Ga2 O3 ,且可得到(201)及(110)面的間距分別為0.46nm及0.29nm。Referring to FIG. 10, FIG. 11, FIG. 10 and FIG. 11 respectively, fast Fourier transformation (FFT) for the lower dotted frame of FIG. 9, and inverse fast Fourier transformation (IFFT) The analysis image map, the microstructure along the [112] zone axis can be clearly seen from the microstructure image in the figure, and the shell layer is confirmed to be monoclinic. β-Ga 2 O 3 , and the pitches of the (201) and (110) planes were 0.46 nm and 0.29 nm, respectively.
關於該具體例的場發射特性分析,簡單的說明如下。A brief description of the field emission characteristics of this specific example is as follows.
將該具體例製得的核殼結構奈米線,及一當成對照實驗的純三氧化鎵奈米線,分別置入真空腔體內,並保持壓力在10-6 torr下量測該核殼結構奈米線,及該三氧化鎵奈米線的場發射特性。The core-shell nanowire prepared by the specific example and the pure aluminum oxide nanowire as a control experiment were respectively placed in a vacuum chamber, and the core-shell structure was measured while maintaining the pressure at 10 -6 torr. The nanowire, and the field emission characteristics of the gallium trioxide nanowire.
參閱圖12、圖13,圖12是該核殼結構奈米線,與該三氧化鎵奈米線的發射表面與該電極的間距為100nm時,所分別量測的施加電場(applied field)與發射電流密度(emission current density)曲線圖,圖13則是圖12的部分放大圖。由圖中曲線得知,該具體例製得的核殼結構奈米線的導通電場為0.12~2.4V/μm,與目前發展中之奈米線(例如:矽奈米線(導通電場為:7.4~11.5V/μm)、銅奈米結構(導通電場為:4V/μm)、金奈米線(導通電場為:4V/μm),及奈米碳管(導通電場為:0.94~2.77V/μm)的場發射特性相較均具有較佳的場發射特性。Referring to FIG. 12 and FIG. 13, FIG. 12 is an applied electric field of the core-shell structure nanowire and the emission surface of the gallium trioxide nanowire and the electrode spacing of 100 nm, respectively. The emission current density curve, and FIG. 13 is a partial enlarged view of FIG. It is known from the graph that the conduction electric field of the core-shell nanowire prepared by the specific example is 0.12~2.4V/μm, and the currently developing nanowire (for example, the nanowire (the conduction electric field is: 7.4~11.5V/μm), copper nanostructure (conduction electric field: 4V/μm), gold nanowire (conduction electric field: 4V/μm), and carbon nanotubes (conduction electric field: 0.94~2.77V) /μm) has better field emission characteristics than field emission characteristics.
縱上所述,本發明提供一種製程簡單的一階段成長方法,以易於控制、製程簡便,且可大量生產的過程製作異質核殼結構奈米線,製得的該異質核殼結構奈米線藉由單晶結構金屬構成的核心進行電流的導通,並利用圍繞於該核心的殼層來降低電子導通時的電子散射效應,且利用單晶金屬構成的凸端使導通的電流集中後向外發出,而可得到比目前發展的奈米線更優越的場發射特性,確實達成本發明的創作目的。In summary, the present invention provides a one-stage growth method with simple process, which is easy to control, simple in process, and can be produced in a mass production process to produce a heterogeneous core-shell nanowire. Conducting current through a core made of a single crystal structure metal, and utilizing a shell surrounding the core to reduce the electron scattering effect when the electron is turned on, and using the convex end of the single crystal metal to concentrate the conduction current and then outward The field emission characteristics superior to the currently developed nanowires are obtained, and the inventive object of the present invention is indeed achieved.
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍 及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。However, the above is only the preferred embodiment of the present invention, and the scope of the present invention cannot be limited thereto, that is, the scope of patent application according to the present invention. And the simple equivalent changes and modifications made by the description of the invention are still within the scope of the invention.
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2‧‧‧凸端2‧‧‧ convex end
3‧‧‧延伸段3‧‧‧Extension
31‧‧‧核心31‧‧‧ core
32‧‧‧殼層32‧‧‧ Shell
4‧‧‧貴重金屬微粒4‧‧‧ precious metal particles
51‧‧‧矽載板51‧‧‧矽carrier board
52‧‧‧非晶態二氧化矽52‧‧‧Amorphous cerium oxide
6‧‧‧鎵粉末6‧‧‧Gallium powder
7‧‧‧三氧化二鎵單晶金屬氧化物7‧‧‧Dioxide-series single crystal metal oxide
圖1是一示意圖,說明本發明核殼結構奈米線的較佳實施例;圖2是一流程圖,說明圖1本發明較佳實施例的製作方法;圖3是一示意圖,說明鎵粉末與非晶態二氧化矽反應的過程;圖4是一示意圖,說明鎵粉末與非晶態二氧化矽反應生成本發明核殼結構奈米線;圖5是一TEM(HAADF)影像,說明本發明該具體例製得的核殼結構奈米線;圖6是一穿透式電子顯微鏡影像,說明該具體例製得的核殼結構奈米線;圖7是一穿透式電子顯微鏡影像,補充說明圖5該具體例製得的核殼結構奈米線的端部結構;圖8是一EDX影像,補充說明圖6點框處的元素分析影像;圖9是一高解析度穿透式電子顯微鏡影像,補充說明圖6點框處的細部結構分析影像;圖10是一快速傅立葉轉換分析影像,補充說明圖9點框處的細部結構分析影像;圖11是一反向快速傅立葉轉換分析影像,補充說明圖9 點框處的細部結構分析影像;圖12是一施加電場與發射電流密度曲線圖,說明本發明該具體例製得的核殼結構奈米線的場發射特性;及圖13是一施加電場與發射電流密度曲線圖,為圖12的部分放大圖。1 is a schematic view showing a preferred embodiment of the core-shell structure nanowire of the present invention; FIG. 2 is a flow chart showing the manufacturing method of the preferred embodiment of the present invention; FIG. 3 is a schematic view showing a gallium powder The process of reacting with amorphous ceria; FIG. 4 is a schematic diagram showing the reaction of gallium powder with amorphous ceria to form the core-shell nanowire of the present invention; FIG. 5 is a TEM (HAADF) image, illustrating The core-shell structured nanowire prepared by the specific example is shown in FIG. 6; FIG. 6 is a transmission electron microscope image illustrating the core-shell structure nanowire prepared by the specific example; FIG. 7 is a transmission electron microscope image. 5 is an end view of the core-shell nanowire prepared in the specific example; FIG. 8 is an EDX image, which supplements the elemental analysis image at the point frame of FIG. 6; FIG. 9 is a high-resolution transmissive image. The electron microscope image supplements the detailed structure analysis image at the point frame of Fig. 6; Fig. 10 is a fast Fourier transform analysis image, which supplements the detailed structure analysis image at the point frame of Fig. 9; Fig. 11 is an inverse fast Fourier transform analysis Image, supplementary explanation Figure 9 The detailed structure analysis image at the point frame; FIG. 12 is a graph of applied electric field and emission current density, illustrating the field emission characteristics of the core-shell structure nanowire prepared by the specific example of the present invention; and FIG. 13 is an applied electric field and The emission current density curve is a partial enlarged view of FIG.
附件一:說明圖8EDX的彩色圖片。Annex 1: Description of the color picture of Figure 8EDX.
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Chin-Hua Hsieh, Mu-Tung Chang, Yu-Jen Chien, Li-Jen Chou, Lih-Juann Chen, and Chii-Dong Chen, "Coaxial Metal-Oxide-Semiconductor (MOS) Au/Ga2O3/GaN Nanowires", Nano Letters, Sep. 2008, vol.8, No.10, page 3288~3292 * |
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