TWI353395B - Method and apparatus for maintaining parallelism o - Google Patents

Description

Nine, invention description: t Ming genus 】 Related application information This application claims the interest of 60/534,183 in the US temporary patent application filed on December 31, 2003. This reference application, if presented in its food, is hereby incorporated by reference. FIELD OF THE INVENTION This invention relates to the field of general electrochemical fabrication and relates to the formation of three-dimensional structures, such as microscale or mesoscale structures. More particularly, the present invention relates to an improved method and apparatus for achieving a desired degree of parallelism between layers and/or for achieving the desired thickness of the structural layer. [Prior Art 3 Background of the Invention A technique for forming a two-dimensional structure (e.g., parts, components, devices, and the like) from a plurality of layers of adhesion layers has been invented by Adam L. Cohen. It is well known for electrochemical manufacturing. It has been owned by Micr〇fabrica InC. (formerly known as 金&η8 Corporation) by Burif, Calif〇rnia. The name of EFABTM is engaged in commercial manufacturing. This technique is described in U.S. Patent No. 6,027,630, issued Feb. 22, 2000. The electrochemical deposition technique can use a single-masking technique to selectively deposit a material comprising a mask using an on-cut structure, the mask comprising a patterned conformal material, and the structure is When the substrate on which (10) is performed is not subjected to electrodeposition, the conformal portion of the mask is brought into contact with a substrate, and in the presence of the electric clock solution, the mask can be Contact of the conformal portion with the substrate inhibits deposition at the selected location. For convenience, these masks are often referred to as conformal contact masks; this masking technique is commonly referred to as a conformal contact mask plating method. More specifically, in the terminology of Microfabrika Limited (formerly known as Menkin® Co., Ltd.) of Burbank, Calif., this mask is known as INSTANT MASKSTM, and This method is well known as immediate INSTANT MASKINGTM or immediate MaerskTM QNSTANT MASKTM plating. A single layer of material may be formed using a selective deposition (which has been plated using a conformal contact mask) or may be used to form a multilayer structure. The teachings of the '630 patent are hereby incorporated by reference in its entirety in its entirety herein in its entirety. Because of the application for the patent application of the above mentioned patent, there have been a number of publications on conformal contact mask plating (ie, INSTANT MASKING) and electrochemical fabrication: (1) A. Gu Han, G. Zhang, F. Qian (Tseng), F. Mensfeld, U. Frodis and P_Will, "Iefeibo : Batch manufacturing of functional, fully dense metal parts with micro-scale configuration", Proc. 9th Solid Freeform 20 Fabrication, August 1998 in Austin, Texas The University of Texas, p 161 〇 (2) A. Guhan, G. Zhang, F. Money, F. Mensfield, U. Vladis and P. Will, “Ifei Bo: High depth ratio, fast, low-cost desktop micromachining of real 3D MEMS, Proc., January 1999, 12th 6 1353395 IEEE Micro Electro Mechanical Systems Symposium (12th IEEE Micro Electro Mechanical Systems) Workshop), IEEE, p 244. (3) A. Guhan, “Using Electrochemical Manufacturing 3D Micromachining,” March 1999 Micromachine Devices. 5 (4) G·Zhang, A. Guhan 'U. Vladis' F. Money, F. Mensfield and P. Will, “Ifeibo: Real 3D Microstructure Quick Table "Top-of-the-line manufacturing", April 1999, Pr〇C_ 2nd International Conference on Integrated MicroNanotechnology for Space Applications, The Aerospace. (5) F_Money, U. Vladis, G. Zhang, A. Guhan, F. Mensfield, and Wei Wei, “Yi Feibo: Using low-cost, automated, batch methods High depth ratio, arbitrary 3D metal microstructures, June 3rd, International Workshop on 15 High Aspect Ratio MicroStructure (HARMST'99). (6) A. Guhan, U. Vladis, F. Money, G. Zhang, F. Mensfield, and Wei Weir, “Ifeibo: Low Cost, Automated, Electrochemical Batch Any of the 3D microstructures manufactured, Micromachining and Microfabrication 20 Process Technology, September 1999, SPIE 1999 Symposium on Micromaching and Microfabrication . (7) F. Qian, G. Zhang, U. Vladis, Α·Guhan, F. Mensfield, and P. Will, “Ifeibo: Using low-cost, automated, batch methods Height 7 1353395 Depth Ratio, Arbitrary 3D Metal Microstructure", MEMS Symposium 'International Mechanical Engineering Congress and Exposition in November 1999 ° 5 (8) A. Guhan , "Electrochemical Manufacturing (IberberTM)", Chapter 19 of the MEMS Handbook, edited by Mohamed Gad-EI-Hak, CRC Press, 2002. (9) “Fat-manufacturing and lethal application of rapid prototyping”, Rapid Prototyping Report, June 1999, page 1-5, CAD/CAM, 10th Edition. The disclosures of these nine announcements are hereby incorporated by reference in its entirety in its entirety herein by reference. The electrochemical deposition method can be carried out in several different ways as proposed in the above patents and publications. In one form, the method includes performing three separate operations during the formation of each of the layers of the desired structure: 1. Selectively depositing at least one material on one of the substrates by electrodeposition or multiple On the area. Lu 2. Then, using electrodeposition to mask deposition of at least one other material 'so that this other deposit covers the previously selectively deposited 20 region of the substrate and the region that has not previously received any selective deposition coating - this region on. Finally flattening the material deposited during the first and second operations to produce - a first layer having a smooth surface having a desired thickness > a region comprising at least one material, and at least one region comprising 8 At least one other material. After the first layer is formed, one or more other layers may be formed which immediately adjoin the layer and adhere to the smooth surface of the layer. These other layers may be formed by repeating the first to third operations - or multiple times, wherein the formation of subsequent layers of each layer treats the previously formed layer and the starting substrate as a new and thickened substrate. Once formed, all layers are formed. Typically, at least a portion of the deposited at least one material is removed to expose or release the desired three-dimensional structure. A preferred method of selective electrodeposition included in the first operation is to electroplate a conformal contact mask. In this plating pattern, 'first or = conformal contact (cc) mask. The paper mask includes—the support knot is adhered or formed—the pattern can be entered.” The shape of each mask can be shaped according to the material of the electric shovel: shaping the shape. - The cross-section pattern requires at least one: mask. u Shielding, =^^=7, material. In this case, the typical method is the anode. In another method, the effect in the μ = hole material 'the deposition material During the electricity "Working Period 2: It passes through the square handle of the surface of the (4) (4) through the anode, the cc mask can share - the common branch, that is, the conformable dielectric material pattern of the method can be located in a single ' When the cc^ floor structure includes multiple electric ore patterns, the overall structure refers to 2 fortunately, and at the same time, the respective plating masks may be referred to as "sub-masks." Used in this application. 26 Do not place the mask of the mask on the substrate to be deposited only when it is associated with the specific location to be produced. The selected part is in position two," and is pressed against it (or onto the previously formed layer or to the first point of J 1 of the first layer). To allow the insurable part of the CC to be covered. All of them are in the form of a plating solution, and the CC mask is pressed together with the substrate. When a suitable voltage and/or current is supplied, the CC mask can be contacted with the substrate (4). An obstacle that will be deposited as the f, while the opening in the C-mask and filled with the plating solution acts as an uncontacted portion that transfers material from the anode (1), such as a CC masking branch, to the substrate (its The route acting as a cathode during the plating operation. An example of CC mask & CC mask plating is shown in Figure 1A-1C. Figure 1A shows a side view of the CC mask 8, which is covered by a It is composed of a conformable or deformable (e.g., elastomeric) insulator patterned on the anode. The anode has two functions. Also depicted is a substrate 6 that is spaced apart from the mask 8. One of the functions of the anode is as a support material for the patterned insulator 1 to maintain its integrity and alignment because the pattern can have a topology Learning complexity (for example, including an isolated "island" of insulating material). Another function is as an anode for this plating operation. This (:^ mask plating can selectively deposit material 22 onto substrate 6 by: : by simply pressing the insulator against the substrate ' and then depositing a material by gaps 26a and 26b in the insulator, as shown in Figure 1B. After deposition, the cc mask is separated from the substrate 6. (preferably non-destructive), as shown in the first (: Figure.): (the mask plating method is different from the "through-mask" plating method, in the penetration mask plating In the method, the separation of the masking material from the substrate will be destructively performed. If using a penetrating mask plating, the CC mask plating can selectively and simultaneously deposit material over the entire layer. One or more separate plating areas, of which The separated electroplated regions may belong to a single structure to be formed or may belong to multiple structures that will be formed simultaneously. During the removal process, the CC mask plating, such as separate masks, is not intentionally destroyed, so they can be used in many In the second plating operation, another example of CC mask and CC mask plating is shown in the 1D1F diagram. The ID diagram shows an anode 12 separated from the mask 8', the mask package ', two patterns The conformable material 1〇' and a support structure 2〇. The figure also depicts the substrate 6 and the mask 8 separated. Figure 1E illustrates the mask 8 being brought into contact with the substrate 6. Figure 1F illustrates the deposit 22 from the anode 12 that conducts current to the substrate 6. The first layer, after separation from the mask 8, is deposited on the substrate 6. In this example, an ionic current from one or both of the solution and the anode placed between the substrate 6 and the anode 12 is conducted through the opening in the mask to the substrate on which the material will be deposited. This mask type can be referred to as an anode-free instant mascar tm (aim) or as an anode-free conformable contact (ACC) mask. Unlike through-mask plating, cc mask plating allows the resulting cc mask to be completely separated from the substrate being fabricated for electroplating, for example, from the formed dimensional (3D) structure. There are a number of ways to form a cc mask. For example, 1353395 can use a light micro-shadow correction method. All masks can be produced simultaneously before the structure is manufactured (and during the manufacturing process). This separation can result in a simple, low-cost, automated, self-contained and internally cleaned "small tool machine factory (deskt叩.fact〇ry)", 'to ask for a service or similar monolithic bribery · 5 To fabricate 3D structures without any clean room process (such as photolithographic lithography to be performed). Examples of electrochemical fabrication methods discussed above are illustrated in Figures 2A-2F. Each graphic shows this The method includes depositing a first material 2 as a sacrificial material and a second material 4 as a structural material. In this example, the CC mask 8 includes a patterned conformal material (eg, an elastomeric interface). Electrical material) 10 and a support 12 made of deposited material 2. The conformal portion of the CC mask is pressed against the substrate 6, and the electric clock solution 14 is located at the opening σ of the conformable material 10. Then, the current from the power supply port 8 is electroplated with the solution 14 via the (4) baffle 12 (which also serves as the anode) and (b) the substrate 6 (which also serves as the cathode). Figure 2A illustrates a The monthly current passes through the material 2 in the plating solution and the material 2, and is selectively transferred from the anode 12 Electroplating on the cathode 6. After the first deposition material 2 is electroplated onto the substrate 6 using the CC mask 8, the CC mask 8 is removed, as shown in Figure 2B. Figure 2C depicts the second The deposition material 4 masks the deposition (i.e., unselected deposition) on the pre-deposited first deposited 20 material 2 and on other portions of the substrate 6. This masking deposition can be made from the second material The anode (not shown) is electroplated via a suitable plating solution (not shown) to the cathode/substrate 6. Then, the two materials are planarized. The layers are all 'to obtain precise thickness and flatness, as shown in the 2D After repeating this process for all layers, the multilayer structure 20 formed by the second material 4 (ie, structural material) 12 1353395 has been buried in the first material 2 (ie, the sacrificial material), as shown in the second 2E. The buried structure is etched to produce the desired device (ie, structure 20) as shown in Figure 2. 10 15 The various components of a typical manual electrochemical manufacturing system 32 are shown in Figure 3A-3C. The system 32 consists of several subsystems 34, 36 38 and 4 s. 34 is depicted in the upper portion of each of Figures 3A-3C, which includes several components: (1) carrier 48; (2) metal substrate 6 on which the layers are to be deposited, and (3) linear slider 42. The substrate 6 can be moved up and down relative to the carrier 48 in response to the driving force from the actuator 44. The subsystem 34 also includes an indicator 46 that can be used to measure the vertical position difference of the substrate, which can be used The layer thickness and/or deposit thickness is set or measured. The secondary line 34 includes a foot 68 of = 48 to accurately mount it on the secondary system 36. The cc mask is shown in the lower portion of Figure 3A. The system % includes several components: (1) CC mask 8, which is actually composed of CC masks (ie, sub-masks) that share the common-common object/anode 12; (2) precise χ-stage 54 accurate The magazine 56; (4) a frame 72 on which the legs 68 of the subsystem 34 can be mounted, and (5) used to contain the slot % of the electrolyte 16. The secondary system "and % also includes the electrical connection of the shot (no display to connect to the appropriate power supply to this CC shielding method.

20 The masking deposition subsystem 38 is shown in the lower portion of the map, the components of which are: (1) the anode 62; (2) the electrolyte tank 64, which uses ^(4) 66; and (3) the frame 74, which can be placed on top of it. The system (4) 68 is also included with a suitable electrical connection (not shown) to connect the anode to a suitable power supply to drive the mask deposition method. The 13 1353395 planarization subsystem 40 is shown in the lower portion of Figure 3C and includes a polishing pad 52 and an associated movement and control system (not shown) for planarizing the deposit. The '630 patent further illustrates that the electroplating process and S article disclosed therein can be fabricated from a thin layer of material such as, for example, 'metal, polymer, ceramic, and semiconductor materials. It is further illustrated that although the specific embodiment of electroplating described therein has been described with respect to the use of two metals, a plurality of materials may be deposited by an electrical bonding method therein or a separate process performed throughout the electrominening process, for example Polymer, ceramic and semiconductor materials and any number of metals. It has been shown that a thin plated substrate can be deposited (e.g., by sputtering) on a less conductive deposit (e.g., by an insulating layer) for subsequent plating. It also illustrates that a plurality of branch materials (i.e., sacrificial materials) can be included in the electrode assembly to selectively remove the support material.

15 20 is a method of forming a microstructure by κm-plated metal (ie, 4 electrochemical manufacturing techniques) teaching the name of Henry Guekd's 'Special Case No. 5, 19G, 637. ''Make a microstructure by sacrificing a metal layer by multi-step deep (four)'. This patent teaches 12 exposure to form a metal structure. The first layer of the main metal is electroplated. 'To fill the voids in the photoresist and then transfer the secondary metal on the first layer and the key substrate. Then the exposed surface of the secondary metal is machined down to - can be exposed] The spacing of the genus to create a "p-surface" that extends across both the primary and secondary metals. Then, the formation of the second layer can be started, and the process of manufacturing the germanium layer by the first "light-retardant layer"

After 14 1353395, the process is repeated until the entire structure is formed and the secondary metal is removed by etching. Forming the photoresist on the electroplated substrate or the previous layer by casting, and the void in the photoresist can be exposed through the patterned mask to expose the photoresist via X-ray or UV light radiation. form. 5 Even if the electrochemical fabrication as taught and practiced so far has greatly improved the microfabrication capability, in particular the number of metal layers that can be incorporated into the structure and the speed and simplicity of the structure that can be made, there are still It can increase the space for electrochemical manufacturing. In particular, there is a need for an enhancement technique that can be used to measure the completion of the planarization operation (i.e., endpoint detection), and to achieve a layer thickness within a desired tolerance or to add a layer having a thickness equal to a layer thickness. The height of the target structure. There is also a need for an enhancement technique that can be used to measure the parallelism of a deposited layer relative to a previously deposited layer or substrate. SUMMARY OF THE INVENTION The object of one or more embodiments of the present invention is to provide a substrate modification technique that includes an improved endpoint detection method and apparatus. It is an object of one or more embodiments of the present invention to provide a substrate upgrading technique that includes an improved method and apparatus for maintaining parallelism. It is an object of one or more embodiments of the present invention to provide a multilayer 20 electrochemical fabrication technique having an improved endpoint detection method and apparatus. It is an object of one or more embodiments of the present invention to provide a multilayer electrochemical fabrication technique having an improved method and apparatus for maintaining parallelism. Other objects and advantages of the various embodiments of the present invention will be apparent to those skilled in the <RTIgt; Different specific embodiments and aspects of the invention (as explicitly set forth herein or otherwise identifiable from the teachings herein) may satisfy one or more of the above objectives, alone or in combination; or alternatively, they may satisfy the teachings herein. Certain other objects of the invention identified. It is not necessary to satisfy all of the objectives by any single point of view of the invention, even though it may be an example of some of the relevant points. In a first aspect of the invention, a method of forming a multilayer three-dimensional structure includes: (a) forming a layer of material and adhering it to a previously formed layer and/or to a substrate, wherein the layer comprises at least A preferred embodiment of a material wherein one or more contact pads are present on the substrate or previously formed layer; (b) subjecting the at least one material to a planarization operation; (c) placing a measurement probe The needle is disposed in contact with the one or more contact pads and in contact with the material that will undergo the planarization operation, and is related to the height measured at at least one location relative to the desired reference position or plane from the planarized material Fixture 15 (fixture) selects the material; (d) compares the height measured by the material with the desired height of the material; (e) if the measured and desired height is not within the desired tolerance, then Overlay operations (b)-(d) until the measured and desired heights are within the desired tolerance; (1) repeating the forming and adhering operation (a) - or multiple times to form the layer from the plurality of adhesion layers Three-dimensional structure. In a second aspect of the invention, a method of forming a multilayer three-dimensional structure includes: (a) forming a layer of material and adhering it to a previously formed layer and/or to a substrate, wherein the layer comprises a desired pattern of at least one material; (b) subjecting the at least one material to a planarization operation comprising: (1) mounting the substrate to a polishing fixture via a porous vacuum chuck; (ii) loading the same 16 To the fixing member, the deposited material is subjected to polishing to the surface of the desired material and the height of the deposited material is complexed:::::=1, 5 10 to form a layer forming a multi-layered three-dimensional structure and/or Or to a substrate, a layer and depending on the previously formed case, wherein the desired pattern on the substrate or at least one material is present on the at least one of the layers: - or a plurality of connections (1) via a planarization operation, comprising: simultaneously mounting the substrate to the "polishing fixture"; (9) operating the light to positive/the solid member, allowing the deposited material to be thrown * To phase I to the surface of the 4 material and the height of the deposited material 15 : and: two (4) Set the fixture to be in contact with - or multiple contact pads (4) ^ flattening operation X (four) contact, Wei and flattened =:::: reference position or plane at least - position location 20 The right piece selects the data; (d) compares the desired height of the itch II material measured by the material, and (4) repeats the operation (b) if the measured and desired sorghum is within the desired valley difference. (d) until the measured and imaginary, X is within the desired difference; (1) repeating the forming and adhering operations (4) - 3 乂 forming the three-dimensional structure from the complex layer attachment layer. η In the fourth aspect of the invention, the method for forming (4) a multi-layer three-dimensional structure comprises: (4) forming a layer of material and simplifying it to a previously formed layer and/or to a layer thereof, The layer comprises a desired pattern of at least one material 'wherein - or a plurality of 17 1353395 contact pads are present on the substrate or on a previously formed layer; (b) subjecting the at least one material to a planarization The operation comprises: (1) mounting the substrate to a polishing fixture via a porous vacuum chuck; (ii) simultaneously mounting the substrate to the fixture, and subjecting the deposited material to a polishing operation to planarize The surface of the material is brought to the desired value by the height 5 of the deposited material; (c) the forming and adhering operation (a) is repeated - or multiple times to form the three-dimensional structure from the plurality of layers of adhesion. In a fifth aspect of the invention, a method of fabricating a multilayer three-dimensional structure includes: (a) forming a layer of material and adhering it to a previously formed layer and/or to a substrate, wherein the layer comprises at least A preferred embodiment of a material wherein one or more contact pads are present on the substrate or on a previously formed layer; (b) subjecting the at least one material to a planarization operation; (c) allowing the At least one material is inspected to measure the height of at least two of the deposit relative to a desired reference point, the planarity of the deposit, and the orientation of the deposit relative to a desired reference point; (d) repeated The forming and adhering operation (a) - or more than 15 times - is to form the three-dimensional structure from a plurality of layers of adhesion layers. In a sixth aspect of the invention, a method of forming a multilayer three-dimensional structure includes: (a) forming a layer of material and adhering it to a previously formed layer and/or to a substrate, wherein the layer comprises at least a desired pattern of a material, wherein one or more ginseng pads are present on the substrate or on a previously formed layer that can be used to ascertain at least one of the planarized deposited material deposits The height at which it is, the planarity of the planarized material and/or the orientation of the planarized material; (b) repeating the formation and adhesion operations (a) - or multiple times to adhere from multiple layers The three-dimensional structure is formed. In a seventh aspect of the invention, a method of manufacturing 18 1353395 for forming a multilayer three-dimensional structure comprises: (a) forming a layer of material and adhering it to a previously formed layer and/or to a substrate, wherein the layer a desired pattern comprising at least one material; (b) subjecting the at least one material to a planarization operation comprising: (1) mounting the substrate to a fixture in a high speed cutting machine; (ii) simultaneously, 5 Mounting the substrate to the fixture, subjecting the deposited material to a rotary cutting tool to planarize the surface of the material and bring the height of the deposited material to a desired value; (c) repeating the formation And the adhesion operation (a) - or multiple times to form the three-dimensional structure from a plurality of layers of adhesion layers. In an eighth aspect of the invention, a method of fabricating a multilayer three-dimensional structure comprises: (a) forming a layer of material and adhering it to a previously formed layer and/or to a substrate, wherein the layer comprises a desired pattern of at least one material, wherein one or more contact pads are present on the substrate or on a previously formed layer; (b) subjecting the at least one material to a planarization operation comprising: (1) The substrate is mounted to a fixture in a high speed cutting machine; (ii) when the substrate is mounted to the fixture, the deposited material is subjected to a rotary cutting tool to planarize the surface of the material and Bringing the height of the deposited material to a desired value; (c) placing a fixture in contact with one or more contact pads and in contact with the material that will undergo the planarization operation, and from the planarized material The fixture is selected in relation to the height measured at at least one location 20 of the desired reference position or plane; (d) the height measured by the material is compared to the desired height of the material; (e) If measured and thought If the height is not within the desired tolerance, repeat operations (b)-(d) until the measured and desired height is within the desired tolerance; (f) repeat the forming and adhering operation (a) One or more times to form the three-dimensional structure from a plurality of layers of adhesion layers. 19 1353395 5 10 4 In a ninth aspect of the invention, a method for forming a multilayer three-dimensional structure comprises: (4) forming a layer of (-) and adhering it to a previously formed layer and/or to a substrate, wherein the layer A desired pattern comprising at least one of the materials wherein one or more contact pads are present on the substrate or on a previously formed layer, (b) subjecting the at least one material to a planarization operation comprising: (1) Mounting the substrate to a fixture in a high speed cutting machine wherein the fixture has the ability to flatten the plane of the substrate relative to the plane of the cutting machine; (8) adjust the plane of the substrate to The plane is matched on the high-speed cutting machine; then (when the substrate is mounted to the tamping element, the deposited material is subjected to a rotary cutting tool to planarize the surface of the material, the deposited material The height is brought to the desired value; (4) Repeated and adhered operation (4) - or multiple times 'to form the three-dimensional structure from the plurality of layers of adhesion layers.

The progress of the 15th December will be understood by those who are familiar with the art after reviewing the teachings. Other aspects of the invention may include apparatus that can be used to perform 'or a plurality of the above-described methods. Further, the present invention may be further developed to provide different combinations of the above-described viewpoints, and to provide configurations, structures, functional relationships, and methods not specifically mentioned in the above. It is a further point of view that can provide a flattening device that can flatten the deposits on the substrate. Even when R, it can provide a fixture that can be used with the device. The first AlC diagram shows the different stages of CC mask plating method 3 side view; fij _ g Le 1 diagram depicting the use of different types of CCii

20 1353395 Cover cc mask plating method, its side view at different stages. 2A-2F is a schematic diagram depicting an electrochemical fabrication process, when applied to form a standby structure, at a different side view thereof, wherein a sacrificial material can be selectively deposited while masking deposition of a structural material. . 5 Figures 3A-3C are diagrammatic views depicting various examples of combinations that can be used to manually perform the electrochemical fabrication methods depicted in Figures 2A-2F. 4A-4I is a drawing depicting the use of an adhesive mask plating to form a first layer of a structure, wherein the masking deposition of the second material will cover both the deposition site of the first material and the first material itself On the opening. 10 Figure 5A provides a flow chart for a method for forming a multi-layer three-dimensional structure in accordance with a first embodiment of the present invention using an end point indicating fixture and a respective flattening fixture. The 5B-5G diagram provides an example of an operational setting that may be used for methods associated with Figure 5A or methods associated with others. 15 Figures 6 and 7 provide different perspective views of a polishing fixture suitable for use in the first embodiment of the present invention. Figure 8 provides a cross-sectional view cut from the cutting plane of the polishing fixture of Figure 6 extending vertically through the center of the fastener. Figures 9 and 10 provide different perspective views of an end point indicating fixture suitable for use in the first embodiment of the present invention. Figure 11 is a top plan view of a substrate having three end point measurement pads. Fig. 12 is a perspective perspective view showing the mounting of the end point indicating device of Figs. 9 and 12 on the substrate of Fig. 11. 21 1353395 Figure 13 provides a perspective view of a high speed cutting machine design in accordance with some embodiments of the present invention. Figure 14 provides a close-up perspective view of the machine-designed measuring fixture and substrate holding and planar adjustment fasteners of Figure 12. 5 Figure 15 provides a perspective view of a measurement fixture focused on Figure 14. Figure 16 provides a perspective view of a substrate holding and planar adjustment fastener focused on Figure 14. Figure 17 provides a perspective view of a perspective adjustment of the planar adjustment fixture of Figure 14 which has removed the motion plate of the substrate holding fixture and the substrate itself. Figure 18 provides a perspective view of a particular component focused on a planar setting fixture, including a truncated spherical member, an adjustment arm bending point, a vacuum chuck attachment bracket, and a clip for tensioning Hold the spring load lever of the vacuum chuck 15. Fig. 19 is a perspective view showing the back of the plane setting fixing member of Fig. 14. Figure 20 provides a block diagram of a sample operation that can be used to match the zeroing plane of the measurement fixture and probe of Figures 13-15 with the plane cut by the high speed cutting tool 20. Figure 21 provides a block diagram showing a front surface that can be used to calibrate the substrate (in which the layer material has been deposited and/or to be deposited) or the deposited material itself, as opposed to being cut by a diamond tool Sample operation of the parallelism of the plane. 22 Ϊ 353395 Figure 22 provides a block diagram of an operation for trimming the material deposited on the substrate to the desired height using the apparatus of the 13th beer. t Depletion mode j DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT 5 10 Figures 1A-1G, 2A-2F and 3A-3C illustrate different configurations of the well-known forms of electrified wind. Other electrochemical fabrication techniques have been proposed: the proposed 630 patent, in various previously incorporated publications, by reference, and in various other patents and patent applications herein; Combinations of the various methods described in the publications, patents, and applications, or other teachings that are well known or can be made by those skilled in the art from the teachings herein. All of these techniques can be combined with various embodiments of the present invention to produce enhanced specific embodiments. Other embodiments may still be derived from combinations of different specific embodiments as set forth herein.

15 20 Figures 4A-4I illustrate differences in the formation of a single layer in a multilayer fabrication process in which a first metal is deposited on a first metal and in an opening of the first metal, wherein the deposit forms the layer portion. A side view of the substrate 82 is shown in Figure 4A; a patterned photoresist 84 is cast onto the substrate as shown in Figure 4B. In Figure 4C, the photoresist can be cured, exposed, and patterned to produce the displayed photoresist pattern. The pattern of the photoresist 84 can create openings or voids 92(8)-92(c) from which the light The surface of the resist 86 extends through the thickness of the photoresist to the surface 88 of the substrate 82. In Figure 4D, the metal 94 (e.g., nickel) is electroplated to the openings 92(a)-92(c). In Figure 4E, pi, the photoresist has been removed from the substrate (ie, chemically stripped), and the exposed base

23 1353395 The material 82 does not cover the area of the first metal 94. In Fig. 4F, it is shown that a second metal 96 has been masked on the entire exposed portion of the substrate 82 (which is electrically conductive) and on the first gold-gear (which is also electrically conductive) (for example, silver 4G) The figure depicts a first layer of the completed structure that can be created by planarizing the first and fifth metals downwardly to expose the first metal and setting the height to the first layer Thickness. In the figure, it shows the results of the multilayer structure formed by repeating the process steps of Figure 4B-4G several times, each layer consisting of two materials. For most applications, One of the materials is removed as shown in Figure 41 to produce a desired 3D structure 98 (e.g., component 10 or device). The various embodiments, alternatives, and techniques disclosed herein may be all A single patterning technique can be used on the layer, or a different layering structure can be formed on different layers to form a multi-layer structure. For example, different types of graphic masking and masking techniques can be used, or even without shielding 15 techniques for selective deposition. For example, A conformable contact mask or a non-conformal contact mask can be used on different layers. Proximity masking and masking operations can be used (ie a masking operation because the mask is adjacent to the substrate, ® Even at least partially contacting the substrate without causing contact; and/or using an adhesive mask and a masking operation (a mask and a masking operation, wherein the mask will adhere to a substrate, While selective deposition or etching will be performed - only in opposition to the location in which it is in contact.) Certain embodiments of the present invention provide a method and apparatus for electrochemically fabricating a multilayer structure, such as a mesoscale or microscale structure, Parallelism with a modified endpoint detection and maintenance of planarization of 24 1353395 material (eg, layers) during electrochemical manufacturing methods. Some methods include the use of a solid part during planarization to ensure the material is The parallelism of the planarized plane to other planarized/integral materials is within the tolerances provided. Some methods include the use of ', point detection fixtures that ensure the deposited material For the starting surface of the substrate 5, relative to the first deposited layer or relative to some of the other layers formed in the manufacturing process, in some embodiments, / flattening may be performed via polishing And the planarization fixture can include a

The multi-sub, ink vacuum chuck is mounted on a stage that can be moved perpendicular to a flat = defined by the honing pad, which will pick up the stencil during the polishing operation. In some embodiments, the end point indicating fixture can include three or more lengths of feet and/or a plurality (e.g., 3-4) of height measuring probes. The use of the fastener can include contacting the feet against the exposed pad. The surface of the substrate is then adjusted to the position of the contact element of the height measuring probe until it contacts the deposit to be measured. The difference in height between the zeroing or correction measurement and the deposit measurement may be due to the height of the deposit and may be the plane orientation of the deposit and/or

Yes: to read the flatness of the sediment. In some embodiments, the positive motion can be bridged if the flatness, planarity, and/or orientation are out of the desired tolerance range. 20 帛 5 is a flowchart provided by a method for forming a multilayer three-dimensional structure in accordance with a first embodiment of the present invention, which uses an end point indicating a fixed two and a flattened fastener. The block lG2f of Fig. 5 is to provide a flattening @piece which can be used to prepare the flattening fixing to be used during the flattening operation by depositing the silk material in the material of the material 25 of the 1st, 25, 353, 395. Pieces. This preparation may include sizing the suction cups that will be used to lose the substrate in order to obtain a surface that will be parallel to the surface of the crucible that will be placed on the fixture during the flattening operation.

Block 106 is required to provide an end point test fixture; at the same time block 108 needs to prepare the solid member&apos; so that it can be used. The preparation may include setting the fixture on a flat surface, and then (4) the probes are in contact with the same flat surface as the fixed length metal locating studs on which the device is removed, Or the output of multiple detection probes is zeroed. Preparation operations 104 and 108 can be performed at the beginning of a build process; or, alternatively, it can be performed periodically throughout a build process. For example, the zeroing of the probe at the end point device can be performed each time the end point detection S] is used.

The setup process begins at block 112 and then moves forward to block Μ m, which requires the definition of several variables and parameters. In particular, define the current layer variable, 'V'; define the last layer parameter, "N"; define the number of operations for the layer η 'οη", and define the parameter for the layer_last operation number, "〇 η". After defining the variables and parameters, the process moves forward to block u6, which needs to provide a substrate to form the structure. 2〇#次' The process moves forward to block U8, which sets the current layer number variable η equal to _(n=1); then moves forward to block 12〇, which sets the current number of operations on layer η The variable is equal to one (0η=1). Second, the process moves forward to block 124, which asks if the current operation (related to (10)) is a flattening operation. If the answer is no, then the system 26^ moves forward to block 126, which needs to operate. n, and then it will move forward to block 148, which will be discussed later in this article. For the inquiry block m, the answer is "Yes", the process will move forward to the zone rope 128' which requires the substrate to be mounted to the flattening fixture (which has been ready for use in block 104) Secondly, the process moves forward to block 13〇, which requires - or multiple flattening operations. For example, this can be done using different types of abrasive materials and/or contact pressure, polishing plate speed And the polishing operation of similar conditions. After the desired flattening operation is completed, the process will move forward to block 132', which requires the use of a secret detection@fixing to perform the end point measurement. In variations of the embodiments, different planarization fixtures can be used, and planarization operations other than polishing can be performed, such as in some alternative embodiments, rough-joining machines can be added and/or Perform precise diamond machining (diamond turning or Next, the process moves forward to block 134, which needs to analyze the data generated from the endpoint detection measurement. This analysis can simply include comparing a measured value to a target value and then determining based on the comparison. Subsequent operations of interest. Again, the analysis may include a more complex mathematical analysis of a plurality of measurement data points, such as to derive a plane from the least squares fit of the data. The analysis may then include derivation The resulting plane is compared to the intended plane height to determine if the target height has been reached. The analysis may also include determining the parallelism of the punctured plane to the desired plane to determine if the desired parallelism specification has been met. Further analysis may include determining if the planarity of the surface satisfies the defined specifications. 1353395 After the analysis has been performed, the process moves forward to block 136, which will ask if the desired target is reached. If a negative reaction occurs, the process will move forward to block 138, which will ask if further planarization is to be made to produce the desired target. The answer to the inquiry is "Yes,,, 5, the process will loop back to block 13 for other flattening operations. In some implementations of this particular embodiment, the planarization parameters may be changed during the planarization process during which the second or subsequent cycle passes, depending on the analysis of the block, even the planarization process itself. If block 138 produces: a negative reaction, the process moves forward to block 14(), which requires three or three actions - (1) to start the bridge and then jump to any suitable position in the process. To continue the establishment; (2) ignore the failure and continue the process; or (3) suspend the establishment process and restart the establishment if necessary. If the interrogation of block 136 produces a positive response or if the second option of block 14 is selected, then the process moves forward to block 142^15 15 Block 142 to ask if another flattening operation is desired. If the response to this inquiry is "NO", then the process moves to block (10) which requires removal of the substrate from the δH flattening fixture. After the substrate is removed from the planarization fixture, the 5 ga process will move to block 148. In some implementations, multiple flattening operations are required to achieve the desired goal of 20 (eg 'initial polishing with coarse-grained slurry, and then after entering the initial goal', the other is called fine (four)) . Interrogation of the block 142 during this execution may result in _ or multiple positive reactions. In this event, the process will move forward to block 144, which requires an increase in the number of operations (〇n-on+1), but the partial process will loop back to the block (10), which needs to complete 28 1353395 other flat Operation. The planarization variables, parameters, and even the planarization process can all be changed during this second or subsequent planarization process. Once the interrogation of block 142 has a negative response, the substrate is removed as required in block 146 (as mentioned above) and then the process moves forward to block 5 148. As previously mentioned, after the desired operation 〇n is performed in block 126, block 148' is also entered. In this example, operation 〇n is not a flattening operation. Block 148 needs to increase the number of operations variable one (〇n=〇n+1), and then the process moves to block 15〇' which will ask if the current number of operations variable is greater than the last number of operations associated with layer n. parameter. If the query produces a negative 1 〇 response, the process loops back to block 124 for another layer η related operation. If the interrogation of block 15 产生 produces a positive response, then the number of variables η will increase by one (η = η + 1), and then the process moves forward to block 154. Block 154 will ask if the current layer number variable η is greater than the last number of layers parameter η(η&gt;Ν?). If the answer to this inquiry is "Yes", then all layers 15 have been formed and the process will move forward to block 156 and terminate. If the answer is no, the process loops back to block 12 and begins the next level of operation. Block I56 requires a layer forming process to terminate the structure, but it is not necessary to complete the entire structure forming process. A variety of post-processing operations can be performed to complete the formation of the desired structure, as will be more fully discussed elsewhere herein and in various patent applications that have been incorporated herein by reference. Figures 5B-5G provide different examples of operational settings that can be used to form the individual layers of the structure. In some embodiments, the operation of a single pattern may be repeated to form each layer of the structure; while, in other embodiments, the formation of the same layer may include an overview of the operations in the different figures. In other embodiments, other layers may be used to form the operation and/or may be used; layering = implementation. The procedure outlined in Figure 5A can be modified in many different ways, . 5 can be performed using different device components. The process can be performed by a single-automatic machine; or it can use different machines to perform a partially formed structure to transfer the structure between machines to analyze the processability of the process being performed. And similar actions. In some embodiments, the present invention may take the form of a device, such as a fully exercised or semi-automated device, to repair a substrate or fabricate a three-dimensional structure, for example, which may include (a) a substrate on which one or more materials are continuously deposited; one or more materials; (a mask comprising at least one void and at least one surrounding material protrusion; (c) a plant The table 'is used to bring at least one protrusion of the mask to or near the substrate 15 to form at least one electrochemical process bag (having a desired orientation associated with any previous deposit) And providing a desired electrolyte in the at least one electrochemical process bag; (d) a power supply to at least one electrode (which may be part of the mask or a separate electrode) Applying the desired electrical start between the substrates to perform the desired substrate modification; (e) 20 a planarization system (eg polishing, high speed cutting or other mechanical or chemical mechanical systems) and detection systems Trimming too much material and detecting if it has Sufficient material is removed; and in some embodiments '(f) at least one controller to control the stage and power supply. In an alternative embodiment, 'the element (b) The mask and the stage of the element 30 1353395 (C) can be arranged by an adhesive mask (for example, a laminator or applicator for dry film sheets and a centrifugal coater for liquid-based photoresist), graphics Systems such as selective exposure systems that use patterned reticle or scanning laser and possible developer and removal systems (eg stripping solution, tank 5 and/or sprinkler and the like) The substrate can be, for example, in the form of a conductive material (eg, a selected metal or the like), a moderately conductive material (eg, doped germanium or the like), a dielectric or a dielectric. / Conductor/semiconductor hybrid substrate on which a conductive seed layer has been formed. The stage can include a linear stage that can be driven by a linear motor or step motor or other swing motor that can be driven a ball screw or other will convert the rotational movement into The mechanism of sexual movement, which may additionally or additionally include a pressure-driven expansion or contraction bellows mechanism. The stage may include a position encoder and may include multiple stages, such as a coarse stage (course) Movement stage) and fine 15 m〇vement stage. The stage can be moved 'on the air bearing or the like to move smoothly. It allows linear movement and/or rotation in all three directions. Movement. In particular, the stage can provide the ability to tilt the substrate or contact the mask to achieve the desired degree of non-parallelism or non-planarity between the interface of the mask and the interface of the substrate. The power supply can take the appropriate form to drive any of the provided reactions. For example, it can be a galvanic or pulsed DC power supply; it can be controlled to output - fixed current or fixed voltage or Variable current or variable voltage ^ ^ can include feedback 'for accurate control. The controller can take a variety of forms. For example, it can be a computer that is programmed in a way to control its 31 P pieces in a desired manner (#|such as heavy_some operations multiple times to establish a multi-layer structure); or, can be used for different The control elements of the device components, each of which can be controlled by the f author. The computer may include a monitor or a (four) indicator and/or a machine for providing a message to an operator or a user; a memory for storing a parameter _ value; a keyboard, a mouse, a touch Camp or - analog 'to accept the author's input. The computer can be connected to the network to allow the terminal to control the system or to control multiple systems from a single computer. Many other device components can also be combined in some specific embodiments: (1) two rigid frames for holding the (four) components with appropriate quasi-heavy; and a protective panel to allow the presence of a controlled environment; 2) controlled air or gas system; (3) temperature control (four) system; (4) substrate purification line; (5) substrate activation system; (6) electric material system and electrolyte replacement or purification system; (7) air filter and circulation system; Process monitoring equipment, such as cameras, data acquisition and storage H (9) access to population and panels; (10) observation of f or camera and monitor; (11) operator warning system, including light and audible signals; (12) heating a system for performing diffusion bonding, smashing selected building materials and the like, or allowing them to flow; and the like. The parallelism of a layer relative to a substrate or a continuous layer can be maintained by the aid of a polishing fixture 2〇2 as shown in Figure 6-8. The fixture comprises a porous graphite vacuum chuck 2〇4 (Figs. 7 and 8) which is used to properly clamp a substrate on which the structure is to be formed to reduce the back of the substrate. The uneven distribution of vacuum minimizes deformation of the substrate. Before the polishing fixture is used to fabricate the structure, the vacuum chuck can be attached to the polishing fixture while being flattened to achieve a coplanar 053395 tense between the planes of the pad blades 2〇6, wherein the pads It will be seated on the polishing pad during the planarization operation and it will be mounted on the wear ring 208. The preparation of the polishing fixture additionally removes any deformation that has been caused by the fastener 212 in the surface of the vacuum chuck 204, wherein the fastener will hold the vacuum chuck to the taxi track 214. The taxiway 214 can move up and down for riding the outer cover 216 (whose money is on the wear cycle). The upward movement of the taxi track 214 (and thus the vacuum chuck 204) produces a self-upward spring force (e.g., a spring from an adjustable tension pattern) that balances the downward gravitational forces acting on the track, the suction cup, and the substrate. The tension spring type counterweight 228 allows the operator to set the effective contact pressure between the flattened surface and the polishing pad. The Venturi type vacuum generator 218 can provide the vacuum required to hold the substrate to the suction cup 204. Vacuum valve 222 allows the operator to switch vacuum to install and remove the substrate. The taxi track 214 and the taxi cover 216 include an air bearing type of machine to ensure frictionless movement when moving in a very fixed and straight path of travel. 15 During operation, the two components are separated by a film of compressed air (provided by a rotary adapter 224) that is held by the bracket 226 and allows the polishing fixture to rotate without blocking air flow. In some embodiments, the taxi track can be a square tube with a circular aperture through its center. The outer square dimension of the glide track is commensurate with the inner square 2 pupil that penetrates the sliding outer cover. The outer cover or slide track may include a porous graphite pad or the like on its side walls, which may usefully allow smooth movement of the slide relative to the outer cover, particularly when a film air is supplied through the porous pads. The wear ring 208 provides a fixed and stable cylindrical surface upon which a lap pad can be worn and which can be engaged with a stopper on the polishing machine and the like 33 1353395 for winding the polishing fixture The purpose of rotating the fixed axis. An honing sheet (e.g., polycrystalline diamond) is attached to the bottom surface of the wear ring and defines a plane on which the stable polishing fixture will rotate. The honing blade wears very slowly and ensures that the plane defined by the polishing fixture 5 remains stable throughout the manufacturing structure as compared to the material on the substrate to be planarized. A seal 232 is also provided (e.g., an annulus ring that pushes against the surface of the wear ring during cleaning, for example, when the fixture is prepared, the upper side is measured downward by 1). The air bearing can be contaminated during normal operation and can also be protected during substrate cleaning operations. The material purple protection 0 and the sliding top 2 3 6 provide similar functions to the top edge of the fixture. The polishing fixture can be loaded into a displacement sensor to measure the relative movement of the sliding outer cover 216 with the 'Pak Choi 214'. Monitoring this displacement during the polishing operation provides an instant measurement tool that removes material from the build process. The signal from the displacement sensing H can be transmitted by a wireless 15^ radio (four) frequency or infrared device mounted to the polishing fixture. Furthermore, electrospinning can be used for the same purpose. In some embodiments, the calibrated or corrected position can be measured from the displacement sensor, such that in some embodiments the displacement sensor can be used for absolute end point or evaluable. The state of the trimming process. A plurality of holes 242 can also be provided for the mounting operation, which allows the operator to manipulate the polishing fixture during operation. During the preparation of the fixture used, the vacuum chuck can be polished using, for example, H (four) money light; after the shape, the vacuum chuck is known to be positively pressurized and the porous material 34 can be rinsed out using isopropyl alcohol or the like. 1353395 to clean the debris. The use of this polishing fixture achieves a very high degree of flatness on the planarized surface (eg, over a surface of 100 mm &lt; 0.5 microns) while maintaining a high degree of parallelism across all established layers (eg, over 100 mm) The surface of 5 is within 0.5 microns). The fixture is designed to remove the portion of the structure from the fixture for other processing operations, and then to mount and planarize the substrate while maintaining a high level of flatness and parallelism. The use of the porous vacuum chuck described above provides some distinguishable advantages in reducing substrate deformation. In some embodiments, the vacuum chuck 10 has a discontinuous surface that is slightly smaller than the diameter of the substrate. In some embodiments, the preferred graphite chuck can be easily polished to a flat (better than 0.3 microns on a 98 mm surface) while achieving specular reflectance sufficient to measure flatness using a laser interferometer. The use of a porous material distributes the vacuum throughout the surface and draws contaminants into the porous material to avoid becoming a source of deformation. In some embodiments, other vacuum chuck types, such as annular grooves, can be used. In some embodiments, the porous graphite material can be incorporated into a support (e.g., an aluminum outer cover) that supports and seals the porous material. The porous material can be seated at a location slightly above the outer cover material to allow the surface to be polished without interfering with the presence of the outer cover to the 20 rows of the substrate, and without apparently leaking the surface region. There are a variety of alternative flattening fixtures. For example, some alternative fasteners may use an adjustable base to mount the vacuum chuck to the sliding housing. These adjustable mounts can have a calibrated adjustment mechanism to adjust the plane of the chuck relative to the plane of the pad. These adjustable bases of 35 1353395 can be used to calibrate the plane of the vacuum chuck so that the outer side surface of the substrate can be made parallel to the plane of the honing pad. This adjustment can be made after the initial deposit of material is placed on the substrate, the deposit being polished to be parallel to the surface of the pad, the plane of the substrate being relative to the planarized 5 deposit The plane is measured. One or more additional planarization operations and potentially one or more additional deposition operations may be used to confirm or adjust the parallelism of the substrate surface relative to the pad surface. In some embodiments, the front and back surfaces of the substrate are polished parallel to each other (within about 2 microns) prior to initiation of establishment. In these embodiments, the parallelism of the major substrate surface (i.e., the front surface) to the plane defined by the metal locating studs may be as much as 2 microns. This error can be absorbed by the first layer of the part (which can be intentionally made thicker if desired), and the parallelism of the parallelism between the subsequent layer and the surface of the substrate can be used as a basis for consideration. In other embodiments, the degree of parallelism can be a comparison between the plane of the first layer and the plane of the subsequent layer. In some such embodiments, the substrate may be planar or scored, which may be aligned to a mark on the polishing fixture and at the end measuring fixture so that angular positioning is reasonably maintained fixed. In some alternative embodiments, the mounted substrate 2 can be polished to have a surface parallel to the surface of the pad to replace the polishing pad with the surface of the pad. parallel. In these embodiments, it is desirable or even necessary to perform the planarization or measurement operation each time the substrate on the vacuum chuck has the same orientation. In some embodiments, it is desirable to planarize the vacuum chuck and then the 36 1353395 substrate so that each is parallel to the plane of the pad, in this example, not required for each polishing operation or When the polishing operation is set, the substrate and the vacuum chuck are mounted to have the same orientation. Figures 9-12 illustrate perspective perspective views of an example of an end point indicating assembly of certain embodiments of the present invention. The endpoint indicating device or fixture can be used to measure the planarized height of the deposit relative to the major surface of the substrate from which the structure is to be fabricated during periodic interruptions in the planarization operation. Figure 11 depicts a substrate 272 having three (3) pads 274, 276 and 278 on its surface, where no deposits will be maintained throughout the manufacturing process. These 10 pads will be used as a required reference and the height measurement of the deposit can be based on it. In certain embodiments (eg, illustrated in Figures 9-12), three endpoint detection pads can be used and are preferably maintained in an undeposited state throughout the build process and remain exposed throughout the process or When it is necessary to make a measurement, it can be made to expose 15%. In some embodiments, the pads can be disposed adjacent the edge of the wafer and spaced 120 apart from the coordinate axis at the center of the substrate. . A variety of methods can be used to prevent deposition on the endpoint detection pad, such as when a dielectric substrate coated with an adhesion layer and a seed layer is used, the pad can be photoresist, wax, lacquer, before being coated with a metal layer. Covering with tape or the like, then 20 can remove the cover to expose the pad for measurement. If one or more metal layers have been deposited in the pad region, they can be removed by selective etching. In some embodiments, the pad region can be surrounded by a structural material "pad" having an inner diameter defining the diameter of the pad; then, selective silver etching can be performed within the gasket (eg, using a soak The swab of the surname of the engraving agent is exposed to four cockroaches as required by 37. The substrate on the right is a metal that can be used for electricity, and the paddle-machi is made of photoresist 1, lacquer, tape, and deposited dielectric before deposition (for example, 'poly(p-xylylene), dioxide dioxide, Nitrile eve) and the like can be applied and the retort can be removed before the enthalpy measurement. On the other hand, the wire covering material is a dielectric material and if it is thin enough (to avoid being flattened) and hard enough, it is properly left over for 4 times and the entire build process. Again, this dielectric coating can be added before the clock and removed prior to measurement. In still other embodiments, a dielectric (e.g., oxygen-only) interposer m can be provided in the wafer adjacent to the pads in a dish form that can be embedded in the wafer and suitably glued. (It can also be -μ, but it must be stable during thermal cycling of the wafer). The insert may be coplanar with the wafer; or if not juxtaposed, the crucible is measured relative to the common wafer surface and recorded and used to measure the height and parallelism of the layer deposited later. Figure 9 shows a perspective perspective view of an end point indicating device 3''''''''''''''''''''''' In some embodiments, the relationship between the metal positioning screw and the pad needs to be fixed (for example, the metal positioning screw 284 must always be mounted on the pad 274, and the metal positioning screw 286 must always be mounted on the pad 286, etc. Etc.) This view will determine how the material from the end point measurement fixture will be used and whether the front surface of the substrate is parallel to the plane of the pad. The tip of the metal locating stud is preferably made of a hard material that does not deform significantly during the measurement process to avoid introducing potential sources of measurement error. The end point indicating device 300 also includes a processing ring 304 and a fixing member clamping plate attached to the metal positioning screw column of the fixing 1353395. The fastener clamping plate is also attached with one or more measuring probes (as depicted in Figures 9, 10 and 12, which depict four probes 292-298 including tips 292'-298) having The measurement probe tip that can be controlled and measured can be retracted to contact the 5 flattened deposits on the surface of the substrate. In some embodiments, the probe tip is extended by air pressure&apos; and a precise air pressure regulator is used to ensure reproducible and equal pressure applied to all four probes. The weight of the fixture is preferably significantly higher than the bonding force applied by the four probes (but not necessarily

Required) so as not to affect accuracy. A valve is used to extend and retract the probe tip 10 end. The tip is normally retracted and extended outward to obtain a zero return reading or to obtain a measured value. In some embodiments, a Heidenhain Metro MT 1287 length measuring instrument can be used; meanwhile, in other embodiments, a 15 20 LVDT type sensing with a possible increased measurement accuracy TJ can be used. Device. In some embodiments, probe retraction can be performed by using a combination of elastic and reduced tensile pressure. In other specific embodiments, a probe that provides a non-contact measurement of the height of the deposit can be used. ^ In still other embodiments, a fixed length probe (ie, a metal positioning screw) can contact the deposited material, and an adjustable length probe or contactless # needle can be used to contact or make the end point indicator pad. Have to measure. / The fixture clamps the plate 306 with the proper hardness and clamping force ^ From the testimony accurate measurement. In some embodiments, the processing ring can be made from a material that transfers a very small amount of heat to ensure that the heat from the operator's hand causes dimensional distortion in the measurement fixture. In other embodiments, the fixture may have fewer or more metal positioning studs and/or

39 1353395 or more probes] When the probes touch the plate on which the metal positioning screw is placed during the calibration process and when they contact the surface to be measured, the difference in the measured displacement values will be generated. The thickness of the planarized material, and the ability to potentially ascertain the surface of the surface relative to the previously detected planar surface or substrate surface, and the potential to ascertain the overall planarity of the surface. Fig. 12 is a perspective perspective view of an end point measuring device or a fixing member 300 which is placed on a substrate to be measured, in which three metal positioning screw posts have been placed on the measuring pad. In some embodiments, each of the measurement probes 292-298 (each having a movable tip 292, -298,) can be an encoder-based measurement device, the accuracy of which allows for appropriate Tolerance standards (for example, they operate on a 12 mm movement with a resolution of 0_01 micron and a reproducibility of +/ 〇〇 5 microns and +M). 2 micron accuracy). The movable probe tip 15 can be hoisted back, but can be based on the contact area of the probe and potentially its own weight 'by air pressure with a settable contact force or to: one suitable for measurement The power of the desired material extends. The four-probe device 292-298 of the preferred device can be seen more clearly in Figure 10, while the four associated probes 20 major ends 292-298 can be more clearly seen in the first. In some embodiments, all four (4) probes are zeroed in the extended position prior to the measurement, while the authoring member is seated on a reference plane (e.g., an optical plane). In other embodiments, it may be simple. The position values of the probes placed on the plate 4 and the difference between these values are recorded. When measuring, (4) the sedimentation of the deuterated deposit, the value taken is used to determine the sediment height and 40 1353395. Possible parallelism and planarity. In some embodiments, the measurements taken by the four probes from the planarized deposits can be used to calculate (using a least squares fit) the plane of the surface of the table. The X and Y slopes are calculated (the slope of the plane along the χ&amp; γ axis (which is assumed to be two axes perpendicular to the plane of the substrate surface) and 2 intercepts. The 2 intercept can be used as a measure of the thickness of the planarized deposit (e.g., the total extent of all deposits) relative to the surface of the primary substrate. The 乂 and ¥ slope values can be used to determine if the measured plane has deviated too far from the main substrate surface or parallel to the hypothetical surface of Table 10. A large value of the X or Y slope may indicate the planarization device or its contamination problem (eg, uneven pad wear, interference with dirt suitably mounted on a vacuum chuck or the like, slurry particles, or the like) ). In fact, if the front surface of the substrate is not made parallel to the back surface of the substrate, there will be a significant difference in the plane orientation between the deposited material and the front surface of the substrate; and 15 = Example 2 can be beneficially compared. The orientation of the plane is related to the first ==== of the material to some other layer of the deposited material or to the assumption that the initially coatable-flattened layer of material will define the measurement zone thereon. Sediment thickness and plane orientation. [20] In some embodiments, whether the plane of use can function properly. The rate can be used to determine parallel control of 0.01 microns, which is equivalent to 1 (K^T tolerance (eg 'per millimeter in some specific embodiments, as described above: 1 micron). The piece can be exposed to the deposited The material, at the same time I's a fixed length of the element or a probe that is hyperactive with the previously formed layer 2 can be in contact with the contact pad on the substrate material. 41 1353395 replaced in some specific examples Use the probe of the endpoint measuring device to measure the planarity'. A laser interferometer can be used to check that proper flatness (for example, 0.3 micron) has been achieved. If the flatness is out of specification, it indicates that the polishing plate needs to be re-planarized. 5 In some embodiments, the measurement is based on a time-limited amount of polishing that is estimated by the operator to be less than the desired target to reach. The iterative step through flattening and measurement (which converges in positive Media value) to achieve the final layer thickness value. In some embodiments, as shown in Example 5B and the example of the redundancy diagram, a flattening operation can be used to achieve the desired layer thickness or partial rise. Structure thickness. Rough The light step can include the use of coarse abrasive particles (eg, 9 micron abrasive particles) that can be polished to a value equal to, for example, the thickness of all previous layers plus the current layer thickness plus 4 micron compensation, tolerance at + /-0.1 microns. Fine abrasive particles (eg 2 microns of ground 15 particles) can then be used 'for example to bring the thickness to a value greater than the last desired surface position 0.1 +/- 0.05 microns. All these measurements can be The substrate is still being held by the fixture. In some embodiments, a - final grinding step can be used, where it is assumed that some amount of material will be removed (e.g., 1 micron). To perform this operation. In some embodiments, the substrate is removed from the fixture and is intended to be measured, which increases the risk of substrate deflection and the like. In these embodiments, the final measurement after grinding may or may not be performed. In some embodiments, a single planarization process and, if desired, repeating until the desired surface level is reached. 42 1353395 In some embodiments, thick substrates such as wafers having a thickness ranging from 1 mm to 10 mm, wafers having a diameter of 15 mm, and the like can be used. This thick substrate provides the following advantages: (1) Even when metal films with high stress are deposited thereon, they are still flat; (7) they are less affected by the flatness of vacuum chucks or other fixtures during planarization; (3) they are easier to flatten to a high degree of flatness And parallelism to the opposite side; and/or (4) they are stronger for processing during the process. This wafer can be thinned after the layer is fabricated (eg, in its -__) A thick substrate is obtained by bonding a -thick "carrier" to a thinner substrate of -1" to provide the thicker wafer effect. The specific embodiment and pair of the method of Figure 5A of 4' above There are a number of enhancements and alternatives to the polishing fixture arrangement of Figure 6_8 and the endpoint detection device of Figure 9.12. For example, in some alternative embodiments, the displacement value 15 ascertained from the polishing fixture can be used to provide endpoint detection for some or all of the layers. In some embodiments, the substrate can be amplied to the polishing fixture during measurement; while in other embodiments, the measurement can be made after the substrate is separated from the fixture. In some embodiments, non-porous vacuum chucks (e.g., vacuum chucks having mechanically formed openings or the like) may be used; while in other embodiments, materials other than graphite may be used. Porous vacuum chuck. In some specific embodiments, the vacuum source for the substrate to the vacuum chuck can be a Venturi hair generator that provides the same air supply capacity as provided between the taxi track and the outer cover as discussed above. For maintenance, at the same time, other types of vacuum generators and/or 43 1353395 may be used for other air pressure sources. * There are many other specific embodiments of the invention. Some of these specific embodiments can be combined based on the teachings herein and in the various teachings herein. Some embodiments may use no masking deposition process and/or they may not use a planarization process. Some embodiments may include selectively depositing a plurality of different materials on a single layer or on different layers. Some embodiments may use a selective deposition process or a mask deposition process that is not an electrodeposition process on certain layers. Some embodiments may use nickel as the structural material&apos; while other embodiments may use different materials. Some specific embodiments may use steel as the structural material with or without sacrificial materials. Some specific embodiments may remove the sacrificial material while other embodiments may not be removed. In some embodiments, the anode (used during electrodeposition) can be different from the conformable contact mask support, and the support can be a porous structure or other porous structure. Some embodiments may use a mask-based selective lithography operation and along with a mask deposition operation. Some embodiments may form a structure on a layer-by-layer basis, but deviate from the rigorous planar layer created by the planar layer to facilitate interleaving of the material between the layers. This alternate process is disclosed in U.S. Application Serial No. 1/434,519, the entire disclosure of which is incorporated herein by reference. And the device", if it is. Its Wang Wen it out, by reference to this article and here. While the various embodiments set forth above have focused on the use of polishing as a preferred planarization technique, the techniques disclosed herein may have other applications. 'When the planarization technique is used in addition to polishing, for example, chemical machinery may be used. 44 1353395 Flattening, grinding, high-speed diamond cutting or similar. In particular, when the flattening process is a technique other than polishing, it is appropriate to terminate the indicating fixing member and method. The teaching of a flat 5 canal operation using diamond high speed cutting during an electrochemical manufacturing process can be found in U.S. Patent Application Serial No. 60/534,159, the entire disclosure of which is hereby incorporated by reference. An electrochemical fabrication process for the fabrication of a multilayer structure, including the use of a diamond machine for the planarization of a deposited material, which is hereby incorporated by reference in its entirety herein by reference in its entirety in its entirety. DETAILED DESCRIPTION OF THE INVENTION The present invention is directed to a method and apparatus for constructing a multi-layer or single-layer structure or apparatus that is planarized on a high speed cutting machine (e.g., the high speed cutting machine of Fig. 13) in a single point diamond machining process. The apparatus and methods discussed below allow the operator to measure and adjust the primary plane of the substrate such that a new plane created during high speed cutting can be parallel to the major plane of the substrate. 15 The same device also allows the operator to measure an approximation. Entering the thickness of the deposited layer. The operator can then perform an initial high speed cutting step to create a substrate with the substrate A flat surface that is intended to compete for the surface of the substrate. In some embodiments, the operator can determine how much material needs to be removed to achieve the desired layer thickness by measuring the thickness of the parallelized surface. The 20 machine is ordered to remove the determined amount of material. In some embodiments, one or more inspections can be made to ensure that the newly defined plane is parallel to the major substrate surface. The unique height and the height of the flattened sound. 'This high-speed cutting can remove all the required materials in a single pass of the cutter through each of the surfaces. p 5? Multiple passes may be made without or without intermediate measurement 45 1353395. The planar cut may be periodically inspected and any desired orientation modification of the substrate performed to ensure that the continuous layers are still parallel to one another and of appropriate thickness. The thickness of the layer and the plane of the new surface can be determined during the final high speed cutting step. 5 As discussed above, a polishing-based planarization embodiment, the measurement and planarization operation preferably is based on the major surface of the substrate. The primary (eg, the surface of the substrate to be added to the layer of material) can be measured, for example, from three gauges (eg, detection, contact pads, and the like) disposed on the substrate, as shown in FIG. In a preferred embodiment, the pads can be maintained throughout each manufacturing process. It should be understood by those skilled in the art that in certain alternative embodiments, these may be The pad is disposed on the back surface of the substrate instead of using a pad on the front surface of the substrate. In still other alternative embodiments, it may be formed on each layer or on portions of the continuous layer. The pad replaces the pad that remains fixed on the surface of the substrate to ascertain the planarity and set the height of one or more subsequent layers to be formed. Figure 13 provides a perspective view of the main components of a high speed cutting machine. The substrate 404, to which the electrochemical fabrication structure has been established, is attached to a substrate plane adjuster 406' which is in turn mounted to a z-axis stage 408 (which is movable in the Z direction defined by arrow 410). The z-axis is an axis that extends substantially perpendicular to the plane scanned by the high 20-speed cutting tool. The Z-axis stage 408 and the X-axis stage 418 are mounted to a vibrating isolation body (not shown) which provides a mechanically stable platform for the entire apparatus. The X-axis extends in a direction perpendicular to the z-axis and allows movement back in the direction indicated by arrow 420. The X-axis stage holds the high speed cutting spindle 422, which in turn holds the high speed cutting tool 46 1353395 bracket 424, which in turn holds the high speed cutting tool itself (no display). In some embodiments, the tool mounted to the tool holder is an early diamond, while in other embodiments other tool materials may be used. A measurement fixture 426 is attached to the spindle housing. 5 Rotary shaft 422 uses a very hard and stable high-speed air bearing. The X-axis and z-axis stages 408 and 418 are extremely accurate and hard and use oi1 hydrostatic bearings. The rotating shaft of the device, the X stage and the Z stage portion (excluding the substrate plane adjusting fixture, the substrate holder and the measuring fixture) and the computer controlled hardware, the soft body, the vibration isolation body and the protective cover The class 10 can be purchased, for example, from Moore Nanotechnology Systems, LLC, of Keene, New Hampshire, such as the Nanotech 350UPL. These components are combined to provide a 15 machine system with a position resolution of 10 nm and the ability to cut surfaces at high speeds with a flat 1 〇〇 nanometer diameter of 1 mm. The substrate can be positioned by the Z-axis stage&apos; while the measurement fixtures can be positioned by the X-axis stage to enable them to be measured so that height, plane orientation and the like can be measured. The boring stage and the z-axis stage can be used to transfer the path of the substrate and the high speed cutting tool. The free rotation of the high speed cutting tool holder 2 〇 relative to the rotating shaft allows the high speed cutting tool to be rotated in the substrate path: while the boring stage can be moved forward to allow for occurrence during set operations and the like. Contact between the tool and the substrate. In Fig. 14, the two measuring probe finger tips 434-1, 434-2 and 434 3 form a computer controllable and readable measuring probe device 4, 47 1353395 432-2 and 432-3 Contact part. The probes can be driven along the ice and provide an electronic readout position as they contact the surface to be measured. The probe read value can be reset to zero when the desired position and/or the surface is encountered, so that a reference plane is set. During certain uses, when the substrate is set to a predetermined position of 5 and is supported by the holder in a predetermined position, the probe tips are positioned along the X axis so that they can be aligned and contacted. Three measuring pads 274'276 and 278 on the substrate. In other uses, the position of the probe can be defined such that it is too close to the area on the substrate that she is exposed to or from the hair. In still other uses, the substrate can be placed in a non-standard orientation to the ruthenium. On the stand so that the tip does not align with the pad. This non-standard bit orientation can be used to generate information about the parallelism of the front and back surfaces of the substrate. The probe tip can be extended using air pressure provided by a high precision air pressure regulator so that all probes can be contacted with equal and repeated contact forces. In a typical operation, the substrate and probe are brought to the x-axis position while the probe tip is retracted to D. Once in position, the probe tip extends and takes three measurements. The plane of the surface of the primary substrate can be ascertained from the readings taken by the two measuring pads. If the position of the measured plane does not match the desired plane orientation, then the plane of the reference surface of the substrate can be adjusted to any flat surface within the range allowed by the plane adjustment fixture. When planarizing a surface, the plane of the reference surface is typically adjusted to have a zero slope relative to the machine's X-Y plane, which is also the plane produced by the high speed cutting tool. Practically, after adjusting the plane using two linear actuators 446-1 and 6-2, the probe tip can again contact the reference pad to measure and confirm that the plane of the substrate has been properly adjusted. In some example 48, repeating the measurement and adjustment may improve alignment on the object achieved by a single pass; however, 'this has typically been found to not require 0 after the measurement, the probe tip (four) shrinks Does not occur not small (four) substrate to injury. Figure 15 shows a detailed view of the measurement fixture. The measuring probe 132 is slightly 132-3 clamped by the probe clamp 133_M33_3 and attached to the water plate 135 in turn and attached to the vertical plate 137 in sequence, which in turn is attached to the shaft cover 422, as shown in Fig. 13. Figure 5 shows the mounting of the substrate to the substrate planar adjustment fixture using a 4-hole carbon vacuum chuck 454. After the porous carbon (4) is mounted to the fixture, the vacuum chuck 454 is subjected to high speed cutting on the machine such that it has the same slope as the cut surface (for example, throughout the 〇 mm meter® its flatness to Within 03 microns). This ability can be used to remove any of the imported (four) shapes that are installed in the vacuum chuck. . . The vacuum chuck is controllably coupled to both the vacuum supply and the air pressure supply such that the substrate is controllably attached, released and the position relative to the suction cup can be easily changed. On the lower side bottom of the vacuum chuck, three substrates were used to set the brackets 458-1-458-2 to help position the substrate. The bottom bracket 々π·2 provides a flat surface that allows a flat surface (e.g., a flat edge of 18 mm) on the edge of the substrate to be viewed on the flat brain surface to help provide rotation before opening the vacuum. The moving plate provides a stable basis for attaching the moving components to the back side. The seventh substrate shows the substrate plane adjustment fixing member 406 from which the moving plate has been removed. Three truncated spheres 462. Μ 62·3 are attached to the moving plate such that they are rotatably engaged with the three grooved brackets. In Fig. 17, three spheres are shown not to be connected to the moving plate. One of the groove brackets is disposed on a fixed vertical plate 466 that has been mounted to the base 467, which in turn is mounted to the load stage; while the other two brackets are disposed on the two curved arms, which are movable to adjust 5 The plane of the substrate when mounted on a vacuum chuck. Three spring biased tension bolts 464-1-464-3 extend through the fixed vertical plate 466 and attach and pull the moving plate with a large preload force (eg, 5 lbs preload) The trough is joined against the groove, thus creating a rigid mechanism. Figure 18 shows a partial enlarged view of the moving assembly, including the spherical 462-1 and 462-3 of the wearer 10, the associated groove brackets 468_1 and 468-2, the tension bolt 464-2, and the attachment bracket. Rack 472-1 (which attaches curved arm 474-1 to fixed vertical plate 466). The flattened spheres and grooves are constructed of hard steel to ensure that the geometric appearance of the assembly remains stable. Figure 19 shows the back side of the substrate planar adjustment fixture 454 which has removed the side plate 477-1 to reveal some other components. There are three tension compression springs 465-1 through 465-3 that produce the large preload on the motion plate with the tightening screwing operations. There are two bending arm arms 474·i and 474 2, each of which is attached to a grooved bracket. When the linear actuators and 446_2 have been driven (which have been mounted by the parent support bar 479 to the side panels (10)-^ and the tip 2) to 20 new positions, the curved points 473] and 473_2 can provide bending damage bars respectively. The points of rotation of arms 474 1 and 474 2 are used. The attachment bracket (also shown at the first level) connects the spine cup body to the vertical panel shown in Fig. 19. Each linear actuator can be used to drive each curved arm. The mechanical advantage obtained from the actuation point compensated by the groove and the truncated spherical motion contact can achieve 50 goals. (1) Provide mechanical leverage, otherwise the linear actuator will be; large pre-(4) It must be more powerful, expensive, and/or less accurate; and (2) ; This mechanism provides a mechanical advantage of 10 to 1 in this embodiment, but in other embodiments, smaller or larger mechanical benefits may be used. The present actuator (e.g., diamond movement actuator N100DC) has a resolution of 0.1 micron, which provides a resolution of 10 nanometers for the sub-plane adjustment of the system. Also visible in Fig. 19 is a carbonized pigeon 182-1 used at the point of contact between the linear actuator and the curved lever arm. Figure 20 provides a proposed sample operation flow diagram that allows the zero plane of the measurement fixture and probe of Figures 13-15 to be matched to the plane cut by the high speed cutting tool. Figure 21 provides a proposed sample operation flow diagram that can be used to set the front surface of the substrate (on which the material layer has been deposited and/or to be deposited) or the deposition material itself, as opposed to being cut by a diamond tool. The parallelism of the plane. Figure 22 provides a proposed operational flow diagram that can be used to trim the deposited material on the substrate to a desired height using the apparatus of Figure 13. The other methods set forth in Figures 20-22 will be apparent to those of ordinary skill in the art in reviewing this disclosure. In some of the alternatives, multiple operations can be eliminated, other operations can be added, and/or multiple replacement operations can be employed. A teaching regarding the formation of a structure on a dielectric substrate and/or the incorporation of a dielectric material into the formation process and possibly incorporating it into the final structure as formed, is filed on December 31, 2003. Some patent applications are in 1353395. The first file of these documents is US Patent Application (10), which is entitled "Electrochemical Manufacturing Method Combining Dielectric Materials and/or Using Dielectric Materials. These archived documents are the second US patent application case. Case No. 60/533,932, issued under the name "Electrochemical 5 Manufacturing Method Using Dielectric Substrate". The third document is the U.S. Patent Application Serial No. 34,157, entitled "Combined Dielectric Materials" The fourth step of the electrochemical fabrication method is U.S. Patent Application Serial No. 60/533,891, entitled "Electrochemistry of a Structure That Combines Dielectric Substrates and/or Seed Layers That Can Be Partially Removed by Planarization" The manufacturing method, the fifth of these documents is US Patent Application No. 6〇/533,895, which is entitled Electrochemical Manufacturing Method for Manufacturing Multilayer Three-Dimensional Structures in Less Holes. Each of the patented documents is hereby incorporated by reference in its entirety herein in its entirety in its entirety in its entirety in its entirety in the the the the the the the The invention is not limited to the specific embodiments, alternatives and uses described above, but rather to the extent of the patent application that appears thereafter. [Limited by Circular] 20 The 1A-lc diagram depicts a side view of the CC mask plating method at different stages, while the 11}_1 (3 diagram depicts the use of different types of cc masks) CC mask plating method, its side view at different stages. 2A-2F diagram depicts an electrochemical manufacturing method, when applied to form a special structure, its side view at different stages, Wherein 52 1353395 selectively deposits a sacrificial material while masking deposition of a structural material. Figures 3A-3C depict a variety of aspects that can be used to manually perform the example sub-combination of the electrochemical fabrication methods depicted in Figures 2A-2F. 4A-4I is a drawing depicting the use of an adhesive mask plating to form a first layer of a junction structure, wherein the masking deposition of the second material will cover the deposition site of the first material and The first material is on the opening between itself. Figure 5A provides a flow chart for the method for forming a multi-layer three-dimensional structure according to the first embodiment of the present invention, which uses an end point indicating fixture and a separate The flattening fixture.

10 Figure 5B-5G provides an example of an operational setting that may be used for methods associated with Figure 5A or methods associated with others. Figures 6 and 7 provide different perspective views of a polishing fixture suitable for use in the first embodiment of the present invention. Figure 8 provides a cross-sectional view cut from the cutting plane of the polishing fixture of Figure 6 extending perpendicularly through the center of the fastener. Figures 9 and 10 provide different perspective views of an end point indicating fixture suitable for use in the first embodiment of the present invention. Figure 11 is a top plan view of a substrate having three end point measurement pads. 20 Fig. 12 is a perspective perspective view showing the mounting of the end point indicating device of Figs. 9 and 12 on the substrate of Fig. 11. Figure 13 is a perspective view of a high speed cutting machine design in accordance with some embodiments of the present invention. Figure 14 provides a close-up perspective view of the machine-designed measurement fixture and substrate holder 53 1353395 and the planar adjustment fixture. Figure 15 provides a perspective view of a measurement fixture focused on Figure 14. Figure 16 provides a perspective view of a substrate holding and planar adjustment of the fixing member of Fig. 14. Figure 17 provides a perspective view of a planar adjustment fixture focused on Figure 14 with the moving plate of the substrate holding fixture removed and the substrate itself removed. Figure 18 provides a perspective view of a 10 focusing on a particular component of the planar setting fixture, including a truncated spherical member, an adjustment arm bending point, a vacuum chuck attachment bracket, and a used under tension A spring load bar that holds the vacuum chuck. Fig. 19 is a perspective view showing the back of the plane setting fixing member of Fig. 14. 15 Figure 20 provides a block diagram of a sample operation that can be used to match the zeroing plane of the measurement fixture and probe of Figures 13-15 with the plane cut by the high speed cutting tool. Figure 21 provides a block diagram proposing a material that can be used to calibrate the front surface of the substrate (in which the layer material has been deposited and/or to be deposited) or deposited material 20 itself, relative to the diamond tool Sample manipulation of the parallelism of the plane of the cut. Figure 22 provides a block diagram of an operation for trimming the material deposited on the substrate to a desired height using the apparatus of Figure 13. [Main component symbol description] 54 1353395 2...first material 44...actuator 4...second material 46...indicator 6...substrate 48...carrier 8... CC mask 52...polishing plate 8'...mask 54...X stage 10...insulator 56...Y stage 10'...formable material 58...groove 12...anode 62...anode 12(2A)...support 64...electrolyte tank 12'...anode 66...plating solution 14...plating solution 68...foot 16(1)...opening 72 ...frame 16 (3A)...electrolyte 74...frame 20(1)...support structure 82...substrate 20(2F)...multilayer structure 84...resistance 22...material 86...surface 22'...sediment 92(8)...void 26a...void 92(b)..void 26b...void 92(c)...void 32...manual electrochemical manufacturing system 94... The first metal 34...the holding substrate of the secondary system 96...the second metal 36...the CC mask subsystem 98...3D structure 38...masking the deposition subsystem 102...block 40...flattening subsystems 104...blocks 42...linear sliders 106...blocks

55 1353395 r 108.. . Block 112.. Block 114... Block 116.. Block 118.. Block 120.. Block 124.. Block 126.. Block 128 .. . Block 130.. Block 132.. Block 132-1... Measurement Probe 132-2... Measurement Probe 132-3... Measurement Probe 133- 1... Probe Clamp 133-2... Probe Clamp 133-3... Probe Clamp 134.. Block 135.. Horizontal Plate 136.. Block 137.. Vertical Plate 138.. Block 140... Block 142.. Block 144.. Block 146.. Block 148.. Block 150.. Block 152.. Block 154.. Block 156 .. Block 182-1...Tungsten Carbide Die 202.. Polishing Fixture 204.. Porous Graphite Vacuum Suction Disk 206.. Pad Grinding Plate 208.. Abrasion Ring 212.. Fastener 214 .. .gliding track 216.. sliding housing _ 218... Venturi type vacuum generator 222.. vacuum valve 224... rotating adapter 226.. bracket 228.. tension spring type counterweight 232. . slurry seal 234.. slurry protection · 236.. . sliding top - 242.. hole 272.. substrate 274.. end point measuring pad 56 1353395 276.. end point measuring pad 278. . End point measurement pad 300.. . End point indicator 284.. .Metal positioning screw column 286.. metal positioning screw column 288.·. metal positioning screw column 292.. probe 294.. probe 296.. probe 298.. probe 292' ...tip 294'...tip 296'...tip 298'...tip 304.. processing ring 306.. fixing member clamping plate 404.. substrate 406.. substrate plane Adjusting fixture 408.. Z-axis stage 410.. . Arrow 418.. X-axis stage 420.. . Arrow 422.. . High-speed cutting shaft 424.. High-speed cutting tool holder 426. . Measurement Fixing Member 432-1... Measuring Probe Device 432-2... Measuring Probe Device 432-3... Measuring Probe Device 434-1... Measuring Probe Finger Tip 434-2.. Measurement Probe Finger Tip 434-3... Measurement Probe Finger Tip 446-1... Linear Actuator 446-2... Linear Actuator 454 (16).. Porous Carbon Vacuum Suction Cup 454 (19).. substrate flat adjustment fixture 456.. sports plate 458-1... substrate setting bracket 458-2... substrate setting bracket 462-1... truncated Spherical 462-2... Truncated spherical 462-3... Truncated spherical 464-1... Spring biased tensioning bolt 464-2... Spring biased tightening bolt 464- 3.. ·Spring biased tension bolt 465 - 1...Tighten compression spring 465-2...Tighten compression spring 465-3...Tighten compression spring 466.. Fix vertical plate 467...Basic 468-1...groove bracket frame

57 1353395 468-2...Tray bracket 472-1... Attachment bracket 473-1... Bending point 473-2... Bending point 474-1... Bending lever arm 474-2... Bending lever arm 478-1...side board 478-2...side board 479...cross support rod

58

Claims (1)

1353395 Patent Application No. 93141486 Patent Application Revision No. 2007.12, 28 X. Patent Application: 1. A manufacturing method for forming a multilayer three-dimensional structure comprising: (a) forming a material layer and adhering it to the previous a layer formed and/or 5 to a substrate, wherein the layer comprises a desired pattern of at least one material, wherein one or more contact pads are present on the substrate or on a previously formed layer; (b) The at least one material is subjected to a planarization operation; (c) placing a measurement probe in contact with one or more contact pads and 10 contacting the material to be subjected to the planarization operation, and selecting data from a fixture, the The fixture is related to the height of the planarized material measured at at least one point relative to the desired reference point or face; (d) comparing the height measured by the material to the desired height of the material; 15 (e) If the measured and desired height is not within the desired tolerance, repeat operations (b)-(d) until the measured and desired height is within the desired tolerance; (f) repeating the formation And adhesion operations (a) - or multiple times, Adhesion layer is formed from the plural attaching the three-dimensional structure. The method of claim 1, wherein the one or more contact pads comprise at least three contact pads. 3. The method of claim 1, wherein the fixture comprises at least three fixed length metal locating studs and at least one movable probe. The method of claim 3, wherein the at least one movable probe comprises at least three movable probes. 5. The method of claim 3, wherein the at least one movable probe comprises at least four movable probes. The method of claim 3, wherein the at least three fixed metal positioning screw posts are made to contact the pads, and the at least one movable probe is made to contact the deposited material. 7. The method of claim 3, wherein the at least three fixed metal positioning screw posts are made in contact with the deposited material, and the at least one movable probe is made to contact the contacts One of the pads. 8. A method of making a multilayer three-dimensional structure comprising: (a) forming a layer of material and adhering it to a previously formed layer and/or to a substrate, wherein the layer comprises at least one material (b) subjecting the at least one material to a planarization operation comprising: 15 (i) mounting the substrate to a polishing fixture via a porous vacuum chuck; (ii) mounting the substrate to The fixing member simultaneously subjects the deposited material to a polishing operation to planarize the surface of the material and bring the height of the deposited material to a desired value; 20 (c) repeating the forming and adhering operation (a) One or more times to form the three-dimensional structure from a plurality of adhesion layers. 9. A method of fabricating a multilayer three-dimensional structure comprising: (a) forming a layer of material and adhering it to a previously formed layer and/or to a substrate, wherein the layer comprises at least one material a pattern having one or more contact pads on the substrate or on a previously formed layer in 60 1353395; (b) subjecting the at least one material to a planarization operation comprising: (i) via one more a hole vacuum chuck mounting the substrate to a polishing 5 fixture; (ii) mounting the substrate to the fixture while subjecting the deposited material to a polishing operation to planarize the surface of the material and deposit the deposited material The height of the material is brought to the desired value; (c) a fixing member is placed in contact with one or more contact pads and in contact with the material that will be subjected to the planarization operation, and the data is selected from the fixing member, the fixing The piece is related to the height of the planarized material measured at at least one point relative to the desired reference point or face; (d) comparing the height measured by the material to the desired height of the material; 15 (e) if The measured and desired height is not Within the desired tolerance, repeat operations (b)-(d) until the measured and desired height is within the desired tolerance; (1) repeat the forming and adhering operation (a) - or multiple times, The three-dimensional structure is formed from a plurality of adhesive layers. 20 10. A method of making a multilayer three-dimensional structure comprising: (a) forming a layer of material and adhering it to a previously formed layer and/or to a substrate, wherein the layer comprises at least one material a desired pattern in which one or more contact pads are present on the substrate or on a previously formed layer; 61 1353395 (b) subjecting the at least one material to a planarization operation comprising: (i) via a a porous vacuum chuck mounting the substrate to a polishing fixture; (ii) simultaneously mounting the substrate to the fixture, subjecting the deposited material to a polishing operation to planarize the surface of the material and The height of the deposited material is brought to a desired value; (c) repeating the forming and adhering operation (a) - or multiple times to form the three-dimensional structure from a plurality of layers of adhesion layers. 11. A method of making a multilayer three-dimensional structure comprising: 10 (a) forming a layer of material and adhering it to a previously formed layer and/or to a substrate, wherein the layer comprises at least one material a pattern in which one or more contact pads are present on the substrate or on a previously formed layer; (b) subjecting the at least one material to a planarization operation; 15 (C) subjecting the at least one material to inspection, To measure the height of the deposit relative to at least two of the desired reference member, the planarity of the deposit, and the orientation of the deposit relative to the desired reference member; (d) repeating the forming and adhering operations (a) - or multiple times to form the three-dimensional structure from a plurality of adhesion layers. 20 12. A method of making a multilayer three-dimensional structure comprising: (a) forming a layer of material and adhering it to a previously formed layer and/or to a substrate, wherein the layer comprises at least one material a desired pattern in which one or more reference pads are present on the substrate or on a previously formed layer that can be used to ascertain the height of at least one of the planarized and deposited deposits 62 The planarity of the planarized material and/or the orientation of the planarized material; (b) repeating the forming and adhering operation (a) - or multiple times to form the three-dimensional structure from a plurality of adhesion layers. The method of any one of claims 1 to 12, wherein the forming and adhering the layer of material comprises selectively depositing a first material and masking deposition of the second material. 14. The method of any one of claims 1 to 12, wherein the forming and adhering the layer of material comprises selectively depositing a first material, masking deposition of a second material, wherein at least the first or second material One is deposited via an electroplating operation. The method of any one of claims 1 to 12, wherein the flattening operation comprises a polishing operation. 16. The method of any of claims 1-12, wherein the flattening operation comprises a diamond machining operation. 17. A method of making a multilayer three-dimensional structure comprising: (a) forming a layer of material and adhering it to a previously formed layer and/or to a substrate, wherein the layer comprises at least one material (b) subjecting the at least one material to a planarization operation comprising: (i) mounting the substrate to a fixture in a high speed cutting machine; (ii) mounting the substrate to the fixture And let the deposited material receive a rotary cutting tool to flatten the surface of the material and bring the height of the material to the desired value; ~ 1353395 (c) repeat the formation and adhesion operation (a - or multiple times to form the three-dimensional structure from a plurality of adhesion layers. 18. A method of making a multilayer three-dimensional structure comprising: (a) forming a layer of material and adhering it to a previously formed layer and/or 5 to a substrate, the layer comprising at least one material a desired pattern in which one or more contact pads are present on the substrate or on a previously formed layer; (b) subjecting the at least one material to a planarization operation comprising: (i) the substrate Mounted to a fixed 10 piece in a high speed cutting machine; (ii) mounting the substrate to the fixture while allowing the deposited material to receive a rotary cutting tool to planarize the surface of the material and deposit the deposited material The height of the material is brought to the desired value; (c) a fixing member is placed in contact with one or more contact pads and in contact with the material that will be subjected to the planarization operation, and the data is selected from the fixing member, the fixing The piece is related to the height of the planarized material measured at at least one point relative to the desired reference point or face; (d) comparing the height measured by the material to the desired height of the material; 20 (e) if The measured and desired height is not what you want Within the tolerance, repeat operations (b)-(d) until the measured and desired height is within the desired tolerance; (1) repeat the forming and adhering operation (a) - or multiple times to A plurality of adhesive layers form the three-dimensional structure. 64 1353395 19. A method of making a multilayer three-dimensional structure comprising: (a) forming a layer of material and adhering it to a previously formed layer and/or to a substrate, wherein the layer comprises at least one material. a desired pattern in which one or more contact 5 pads are present on the substrate or on a previously formed layer; (b) subjecting the at least one material to a planarization operation comprising: (i) the substrate Mounting to a fixture in a high speed cutting machine, wherein the fixture has the ability to adjust the plane of the substrate relative to the cutting plane of the high speed cutting machine; 10 (ii) adjusting the plane of the substrate to The cutting plane of the high speed cutting machine is matched; then (iii) the substrate is mounted to the fixture while the deposited material is subjected to a rotary cutting tool to planarize the surface of the material and the height of the deposited material Bringing to the desired value; 15 (c) repeating the forming and adhering operation (a) - or multiple times to form the three-dimensional structure from the plurality of adhesive layers. 65