TWI342598B - High performance system-on-chip passive device using post passivation process - Google Patents

Description

J342598 IX. Description of the Invention: [Technical Field] The present invention relates to the fabrication of a high-performance integrated circuit, and more particularly to a high-performance electronic component such as an inductor component. The method on the surface can reduce the electromagnetic losses caused by the wafer. [Prior Art] The goal pursued by semiconductor technology is to be able to manufacture semiconductor components with performance at competitive prices. With the development of semiconductor processes and materials, coupled with new and sophisticated component designs, the size of such semiconductor components can be significantly reduced. Most of the semiconductor components are used to process digital data. However, some semiconductor components are integrated with analog functions, so that semiconductor components can process new data and analog data in a timely manner, or semiconductor components can have only analog functions. One of the main difficulties in manufacturing analog circuits is that many of the electronic components used in analog circuits are very large and difficult to integrate with sub-micron φ-class electronic components, especially for capacitive and inductive components, because of capacitive components and inductors. The size of the component is too large. Generally, the η-inductive component is used in the field of mobile communication, such as 疋 帛 半导体 on a semiconductor component equipped with an RF amplification iiW amplifier. The RF amplifier mainly includes an adjustment circuit (t_dcircuit), which has an inductance in the tank circuit. Components and capacitor components. Inductive components of the young circuit * (4) New Zealand, capacitor element residual value and fresh riding material _ the impedance generated by the whole circuit, for the signal of a certain frequency, the adjustment circuit can have high impedance or low impedance. The adjustment circuit can block or direct the communication of the communication number and the adjustment circuit can amplify the analog signal according to the frequency of the component. Thus, the adjustment circuit can be used as a domain waver to remove a signal of a certain frequency or to remove noise generated by a circuit that processes analog signals. Using the principle of LC resonance, the adjustment circuit can also generate high electronic impedance, thereby offsetting the parasitic capacitance effect in some of the lines. When the inductor element is formed on the surface of the semiconductor substrate, the problem arises that the parasitic capacitance generated between the spiral inductor element and the underlying substrate has a self-resonant effect. #Use of domain components when designing high frequency circuits. In addition, the capacitive coupling between the inductive component and the underlying substrate can be reduced by the design of the inductive component. In high-frequency circuits, the electromagnetic field generated by the inductive component causes an eddy current to occur in the bottom of the base. Since the Shixia base system is a resistive conductor, the eddy current will lose electromagnetic energy and cause severe energy loss' to form an inductive component with low quality parameters, so that the resonant frequency of l/vz? limits the upper limit of the frequency. In addition, the thirsty current generated by the inductive component can interfere with the circuit performance of the component. Due to the reasons for the gold shot, the energy used to form the summary of the Jinlin Road is also expected to consume energy, which will also form a low-quality parameter inductive component. When making high-frequency analog semiconductor components, it is necessary to provide a key component, that is, an electrical component, which is borrowed into a LC ship circuit. In today's semiconductor industry, both are moving toward high-component components, and the use of shame-based filaments will increase dramatically. Even so, inductive components are formed on the surface of the minimized substrate and the inductive components are maintained at high quality parameters. In case. In general, the inductive elements formed on the surface of the substrate exhibit a spiral pattern on a plane that is parallel to the base red surface. The method of transmitting the inductor element to the surface of the substrate has the following limitations. Most of the high-quality inductance components are arranged in a hybrid component structure (hybrid devi ce confi or ration), single crystal microwave integrated circuit (M〇n〇Hthic

In Microwave Integrated Circuits (MMICas), the components of the electronic components are integrated with the basic processes of integrated circuit manufacturing. If the circuit for storing analog data and analog data is integrated with the circuit for digital data control and digital data storage and fabricated on a large semiconductor substrate, many significant advantages will be achieved. The advantages of integration include reducing manufacturing costs and reducing energy consumption. The spiral inductive component formed on the surface of the semiconductor substrate is limited by the actual size, which causes a parasitic capacitance between the circuit of the inductive component and the underlying substrate, and is affected by the resistive germanium substrate underlying. Lead to the occurrence of electromagnetic energy loss. When the resonant frequency of the trimming circuit suddenly drops, parasitic capacitance can have serious negative consequences for the LC circuit. It is worth noting that the electromagnetic field generated by the inductive component causes the thixing of the resistive material to generate a thirst. The current of the current produces a sharp energy; the energy loss of the energy can form a low-quality parameter of the inductance component. In addition, the quality parameter (Q) can be used to represent the performance of the inductor. The quality parameter is defined as Q = Es/El, where Es represents the energy stored in the reaction part of the component and E1 represents the energy lost in the reaction part of the component. When the quality of the component is higher, the resistance value of the component will become closer to zero, and the quality parameter of the component will be infinitely large. In the case of an inductive component formed on a germanium substrate, electromagnetic energy is significantly degraded due to the influence of the underlying resistive underlying substrate and the metal circuitry forming the inductive component. In terms of components, the quality parameters are used to measure the purity or susceptance of the component. However, the resistive metal circuit and dielectric loss of the base-resistance class degrade the quality parameters. In practice, the circuit is always equipped with some resistive components that waste energy, thus reducing the amount of energy that can be recovered. The quality parameter is unitless. For a separate component that is mounted on a printed circuit board (PCB), when the quality parameter is greater than 1 GG, the system is considered to have a high product f parameter; For an inductive component formed in an integrated circuit, the product f parameter is between about 3 and 10. Inductive components can be formed on large substrates with semiconductor components using conventional semiconductor processes. 'The parasitic capacitance generated by the inductive components at this time limits the upper limit of the frequency of the fiber. _ This sister is unacceptable in many ways of making money. Therefore, it is necessary to design an inductive component with a higher quality parameter, such as 50 or more. The parameter of the towel f is affected by the coaxiality of the circuit of the age c. ^Knowledge shooting 'will be lightly configured to each other _ components are missing for more than H quality parameters, tons of separate components to be integrated with the car (four) ship. However, when the inductive component and these peripheral elements are to be placed on the substrate of the material to form a large Wei road structure, the quality parameter of the wire cannot be reached. If a non-large-scale circuit structure is used, additional lines must be configured to connect the components of the device, and the lines used for connection in the form of a network also generate additional parasitic capacitance and resistance loss. In many applications of RF amplifiers, such as portable battery charging supplies, power consumption is a two important consideration at this time and the lower the better. By increasing the power consumption, the parasitic capacitance can be partially compensated for the resistance energy loss, but this method still has some limitations. All of the above problems occur in the rapidly expanding wireless products, such as mobile phones, where the integration of RF integrated circuits is one of the most important challenges. In addition, by significantly increasing the operating frequency, for example, increasing to between 10 GHz and 100 GHz, the above problem can be partially solved. However, under such a high operating frequency, the quality of the inductor element is affected by the base of the stone eve. The parameters will drop significantly. In order to enable the product to operate at this frequency, 'R&D^{large inductive components, the oblique (4) material other than shreds is used as the base for making the f-sensing components, such as sapphire or stone. Shenhua gallium (GaA_ is the base. Compared with the base substrate ι^_ some of the inductive components formed on the non-Shixia material substrate have lower substrate loss, because eddy current is not formed (eddy) There will be no loss of electromagnetic energy I. So it can be made and has an ancient. The inductive component of the parameter. And, the inductive component formed by the above method: produces less parasitic electric valley, and thus can be allowed to be higher. Operating at a frequency. However, if more complex applications are required, it is necessary to use germanium as a substrate to form the inductive component, because if a material other than germanium, such as gallium arsenide, is used, it is troublesome as a substrate. And when forming a semiconductor component, there are many technical challenges encountered. Since gallium arsenide is a semi-insulating material at a high frequency, it can be reduced because of arsenic. The electromagnetic loss caused by the gallium substrate can increase the quality parameters of the inductive component formed on the gallium arsenide substrate. However, the RF chip of gallium arsenide is very expensive, and if the KF wafer using gallium arsenide can be avoided, There is a better cost advantage in the process. Without sacrificing component performance (such as sacrificing component performance due to substrate loss), there are many ways to integrate the inductive component with the semiconductor environment. One way is to use the last name Or the micromachining method selectively removes the substrate at the bottom of the inductor element, thereby reducing the resistance of the substrate and the parasitic effect. Another method is to use a multi-layer metal layer connection. Aluminum, or copper metal layer wiring formed by damascene. Another method is to use a high-resistance tantalum substrate, which can resist loss, and the resistive loss generated by the substrate is significant. The ground affects the quality parameters of the inductance scale of the material f. In addition, the biased well (biased weli) can be placed in the job Under the components, it is possible to shout less inductive paving in the substrate. Another complicated method is to form an active inductive component, which can simulate the electronic characteristics of the inductive component. However, the inductive component can lead to high power. Consumption and «there is noise generation', so this method can be applied to low-power and high-frequency calving. All methods have the purpose of improving the quality parameters of the inductive components and reducing the thief components in manufacturing. On the table _, and the most important consideration is the part of the age of electromagnetic energy, this is because the electromagnetic energy will cause eddy currents in the Shi Xi substrate. When the volume of the integrated circuit is reduced, the cost per wafer will be reduced. And will enhance the performance of the crystal >1. The wire connection between the wire and other lines or systems becomes more important, and the integrated circuit is gradually reduced. Serious negative impact. Since the parasitic capacitance and resistance of the metal line increase, it will cause a significant drop. The most convenient consumption of the metal line is the voltage drop of the power_flow and ground bus and the delay of the resistance and capacitance of the key signal circuit (10). If it is to reduce the metal line of the electric __ wide, it will lead to a higher capacitance of the metal line.曰 In today's technology, when the inductive component is about 1342598% on the rotating substrate, fine-line technology can be used, and the inductive component is formed under the protective layer. This causes the inductive component to be in close proximity to the surface of the substrate, and the distance between the inductive component and the surface of the substrate is substantially less than 10 microns, which results in high electromagnetic losses in the crucible substrate and reduces the quality parameters of the resistive component. U.S. Patent No. 5,212,403 (Nakanishi) discloses a method of forming a line connection in which internal and external line connections are formed in a circuit substrate on a wafer, and the design of the logic line depends on the length of the line connection. . U.S. Patent Publication No. 5,5,1,6 ((1,111,Jr.) discloses a structure having an insulating layer between an integrated circuit and a circuit substrate, and by dispersing the (four) legs, it may be crystal. The contact of the wire is electrically connected. U.S. Patent No. 5,055,907 (Jacobs) discloses an integrated semiconductor structure that allows a manufacturer to form a thin film multilayer circuit on a support substrate or on a wafer. In order to integrate the circuit outside the wafer. Wu Guo Patent Publication No. 5, 1G6, 461 (V〇lfs〇n et al.) discloses a multilayer wiring structure which utilizes a TAB structure and utilizes polyimine ( The dielectric layer and the Wei layer of the polyimide are superimposed on the wafer. US Special #! Announcement No. 5, No. 767 (wenzei et al.) discloses a method for reducing the resistance and capacitance in the PBGA, 'σ structure. The method of mitigating effect, wherein the multi-layer metal layer is separately configured. The national patent report 苐 5, 686, 764 (Fulcher) discloses a flip chip 12 substrate 'by separating the power line from the wheel input and output leads, which can be reduced Resistor-capacitor slow effect. US _ tells the sixth, _, moving number (Α1_ et al.) A spiral-shaped inductor element formed by using two metal layers, wherein the two metal layers can be connected by via holes. U.S. Patent No. 5,372,967 (Sunda et al.) discloses a spiral Inductive components. U.S. Patent Nos. 5,576, _ (1) and 5,884,990 (Burghartz et al.) disclose another form of inductive component. [SUMMARY OF THE INVENTION] It is to provide a high-performance wafer structure, and in particular to improve the performance of RF. The second object of the present invention is to provide a method for manufacturing an inductor element having a high quality coefficient. The second object of the present invention is to replace the stone wafer. A gallium wafer is used in the stone, and a high-quality inductance element can be fabricated on the Shi Xi wafer. The fourth object of the present invention is to extend the frequency of the inductance element formed on the surface of the crucible substrate. It is possible to form a high-quality passive component on the surface of the germanium substrate. A thick dielectric layer polymer layer is formed on the protective layer and a thick dielectric polymer layer is formed thereon. A process for making a wide and thick metal line can be found in U.S. Patent No. 6,383,916, the disclosure of which is incorporated herein by reference. The electronic component is on the protective layer or on the thick dielectric layer polymer layer, wherein the electronic component is, for example, an inductive component, a capacitive component or a hybrid component, and the device also provides a bedding component that has been fabricated. The method of the above-mentioned and other objects, features, and advantages of the present invention can be more clearly understood. The following is a detailed description of the following: [Embodiment] U.S. Patent No. 6,383,916 is assigned to the same assignee as the present invention, which discloses a wafer structure having a reconfigured wiring layer and a metal wiring layer disposed in a dielectric junction. The upper dielectric layer of the towel is located on the protective layer of the conventional wafer. The protective layer is on the integrated circuit, while the thick polymer layer is selectively overlaid on the protective layer and the wide or thick metal wiring is tied to the protective layer. U.S. Patent Publication No. 6,303,423 is assigned to the same assignee as the present invention to provide a structure for forming an inductive component having a high quality parameter on a protective layer of a wafer. Recording thief elements with high quality parameters can be applied in high frequency circuits' and can reduce the loss of Wei. Also disclosed in this case are capacitive elements and resistive elements that can be (10) formed on the surface of the crucible substrate to reduce parasitic effects caused by electronic components located beneath the crucible substrate. Referring to Figure 1, the wafer structure is shown in accordance with Patent Publication No. 6, 383, 916. The surface of the Weidi semiconductor substrate m, such as the chopped base, has a crystal „ and Wei Shu (tree is shown in Fig. 2). The bottom of the semi-conducting county is covered with an internal dielectric layer miLD). On the electronic component, the metal/dielectric layer μ is on the inner dielectric layer 12, and the metal/dielectric layer 14 includes at least one dielectric layer and at least one metal wiring 13 is in the metal/dielectric layer 14. The metal connection 13 is electrically connected to the electronic circuit. The metal handle of the upper layer has a material region defined as an electrical contact 16, and the electronic contacts 16 can be electrically connected to or on the surface of the stone substrate 1G. The crystal u or other components are electrically connected. The protective layer 18 is located on the metal/dielectric layer 14 to avoid moving ions (such as nano ions), moisture, transition metals (such as gold, silver, copper) or other pollution. The material enters the wafer, wherein the protective layer 18 is, for example, a composite layer composed of an oxygen oxide compound or a nitrogen cerium compound. The protective layer 18 is used to protect the underlying layer such as a transistor, a polysilicon resistor or a polysilicon. Electrons of polycrystalline tantalum capacitor elements Components and fine metal lines. The key step in U.S. Patent Publication No. 6 '383, 916 begins with the deposition of a thick polymer layer 20 in which a polymer layer 2 is deposited on a protective layer 18. The contacts 16 are connected, and the openings 22, 36, 38 pass through the polymer layer 20 and the protective layer 18, and are aligned with the electronic contacts 16. Through the polymer layer 2 of the polyimide layer The openings 22, 36, 38, the electronic contacts 16 can extend electrically into the polymer layer 20. In the preferred case, the material of the polymer layer 20 is, for example, a polyimide layer and a polymer layer. 20 is, for example, a photosensitive material, and the material of the polymer layer 20 may also be benzocyclobutene (BCB), polyarylene ether (pary 1 ene) or epoxy-based material such as ruthenium. SU-8 epoxy resin (available from Sotec M crosysterns, Renens, Switzerland). After forming the openings 22, 36, 38, a metallization process can be performed to form patterned wide metal layer metal connection lines 26, 28 And the electronic contact 16 can be connected. The line metal connection lines 26, 28 may be of any design in width and thickness to conform to the desired circuit design, and the line metal connection lines 26, 28 may serve as a power bus, ground bus or signal sink IL The wire metal connection lines 26, 28 can be connected to the circuit outside the wafer via wire bonding wires or bumps. The electronic contacts 16 are tied to the thin dielectric metal/dielectric layer 14 (as shown in Figure j). The top, and the size of the electronic contacts 16 can be reduced to reduce the capacitance of the underlying metal layer. If the size of the electronic contact 16 t is too large, it will affect the winding of the metal layer. After hardening, the thickness of the polymeric dielectric layer polymer layer 20, such as polyimine, may exceed 2 microns' and the thickness of the polymeric dielectric layer 2, such as between 2 microns and (10) microns. Between, depending on the needs of electronic design.峨 Thicker ton of postal amine layer polymerization (10) 2 "In other words, it can be used for multiple spin coating and Wei Qiao, the application of the sub-filament film. US Patent No. 6,383, 916 discloses a thick or wide metal-metal connection, The path of 30, 32, 34' can be used as the electrical connection between the circuits. Compared with the fine line in the lower layer, the gold line 14 _ gold line 13, Lai Kuan The metal metal connection line 28 has a small resistance value and a capacitance value, and is relatively easy to manufacture and has a low cost. n. Refer to FIG. 2, which is modified from U.S. Patent No. 6,383,916, and also Forming the inductive component 40 on the polymer layer of the thick polyimide layer. The inductor wire 4G is in a flat form and can lie away from the surface of the base semiconductor substrate 1 through the plurality of layers 2, 14, 18, The height of the structure of the structure 20 can make the inductance element 4 〇 away from the surface of the base semiconductor substrate 1 。. The green diagram of the second embodiment shows the inductance τ of the surface 40 perpendicular to the surface of the base conductor substrate 10 Structure 40. With the design of wide and thick metal, the resistance can be reduced The amount of loss, radiation, can be formed into a low-resistance metal such as gold, silver or copper, and its golden stalk is, for example, about 20 microns. Compared with the conventional method of forming an inductor element under a protective layer. The technique, by increasing the distance between the inductor 70 and the crucible substrate, can reduce the electromagnetic field generated by the crucible substrate 1 and the number of components of the moieties can be high. The inductive component can be formed on the Lay layer' or It can be formed on a thick dielectric layer polymer layer (such as silk fibroimine). In addition, a wide and thick metal is killed> into an inductive component having a small parasitic resistance. Another important point is that the width of the opening 19 of the protective layer 18 can be as small as 0.1 micron. Therefore, the 'electronic contact 16 can be small, so that the winding capability of the fine-line metal layer at the top layer can be improved, and A lower capacitance value. Another important feature of the present invention is that the openings 22, 36, 38 of the polymer layer 20 can be larger than the opening 19 of the protective layer ι8, and the openings 22, 36, 38 of the polymer layer 2 Aligned with the opening of the protective layer 18 1 9 ^ The polymer layer 2〇 is designed with a larger opening 22, 36, 38 as a selective design, and is easier to install than the valley, and the polymer layer 2〇 is designed with a larger opening a 36, 38 can be used in conjunction with the design of the thick metal layer to complete the metal deposition process of the present invention after forming the conformal layer 18. The second figure shows the metal structure of the connection structure 26 and the inductance component 4, wherein the inductance component 40 includes two contacts 41, 43 through which the polymer layer 2 can be electrically connected to the electronic contact 16. In addition, referring to Fig. 2, another polymer layer can be formed according to another aspect of the present invention. In the structure as shown in Fig. 2. The 24th and 24b shoulders illustrate another feature of the present invention, wherein the connection to the 1; the contact of the sense is different from the second Connected contacts down 1342598. As shown in Fig. 24a, the dielectric layer polymer layer 35 is formed on the metal wiring metal connection line 26 and the inductance element 4, and the material of the dielectric layer polymer layer 35 is, for example, a polyimide. The open contact opening is applied to the end of the inductor 7G member 40, and one end of the transducible inductor element is exposed. Qiangeng 4G has a H-connected joint and a downward-connected joint 39, which is a structure of "-up-down,". Figure 24b shows an alternate structure in which two upwards are connected. The point opening and tearing exposes the inductive component 40, which is a "all upwards" structure. In Figures 24a and 24b, the contact of the inductive component can be wired or The way of forming the bumps is electrically connected to the external components. In terms of the wire bonding process, the upper surface of the component of the inductor component 4Q must form a metal that can be bonded to the wire bonding wire, and the material thereof is, for example, gold or gold. έ, the under bump metal (UBM) may be formed in the upward contact opening to form the bump. In the 24th and 24bth, the paste is formed in the same manner as the structural metal connection 26 and the inductive component 40. To form the connection line, the inductance element 40 can be electrically connected to other contacts on the wafer or external components as described above via the contact openings 36a, 38a. Referring to Figure 24c, another embodiment of the present invention is illustrated. Feature, one of the extension lines 89 will be connected to the electricity The sensing element 4〇' and the contact opening 36b expose the extension line 89', wherein the position of the contact opening 36b is, for example, at the edge of the wafer, and the wire bonding process can be facilitated, so that the inductance element 4 can be changed through the extension line 89. The position of the connection. The arrangement of the contact opening 38b is as described above. The extension line 89, the metal structure metal connection line .26 and the inductance element 40 are simultaneously fabricated. The extension line 89 can be connected to the inductance element 4〇 to change the electricity. The location where the salty component 40 is externally connected, wherein the extension line 89 can have a connector that is connected downward (not shown, but this concept has been previously described) instead of the connector 36b that is connected upwards. § The contact system of the inductor component In the middle region, for example, the contact exposed by the opening contact opening 38b of Fig. 24c, the contact located in the middle portion of the inductor element 4〇 cannot change the position of the external connection by the extension line 89. However, the contacts located in the middle of the inductive component 40 may be connected upwards or downwards. Figure 3 is a view of the spiral inductor component 4〇 The inductive component 40 is located on the surface of the dielectric layer polymer layer 2, and the inductive component 40 shown in FIG. 2 is a cross-sectional view along the section line 2-2 in FIG. 3. FIG. The cross-sectional view of the inductive component 4A can be used to insulate the influence of the inductive component 40 on the base semiconductor substrate 1 by adding a conductive strip 44a, wherein the conductive strip 44a is substantially above the inductive component 4, and the conductive strip 44a is, for example, copper. Or a conductive material of gold. The conductive sheet 44a extends over the surface 20^42598 of the protective layer 18, and the inductive element 4 is aligned with the conductive sheet 44a and is positioned on the conductive sheet 44a. The conductive sheet 44a may slightly exceed the inductance The boundary region of the component 40 is thus more capable of enhancing the ability to shield the base semiconductor substrate 1 , to prevent the base semiconductor substrate 1 from being affected by the electromagnetic field of the inductive component 40. Referring to FIG. 4, a conductive sheet 44a' is present between the region of the inductor element 4 〇 at least 50% or more and the semiconductor substrate 10. In the preferred case, the inductor element 40 is at least 80% or more. The conductive sheet 44a is present between the region and the semiconductor substrate 10, which further enhances the ability to shield the base semiconductor substrate 10. The conductive sheet 44a can be electrically connected to one of the electrodes of the inductive component 40 (as shown in FIG. 4, the conductive strip 44a can be electrically connected to the contact 43 of the rightmost end of the inductive component 4A as an electrode), and the conductive sheet 44a can be at the level of the floating voltage 'or other brittle connection, depending on the electronic design of the system. The method and material for producing the conductive sheet 44a may be a method and a material for producing the metal connection member 26 and the spacer member 40 as will be described later. The conductor 44 can be formed simultaneously in the fabrication of the conductive sheet 44a, and the thick metal in the upper layer can be connected to the electronic contact 16 by the conductor 44, as shown in Fig. 4. The second polymer layer 47 can be selectively formed on the element 4 and on the metal junction 26 to provide additional protection. Referring to Figures 12 through 23, there is shown a method of forming an inductive component or other passive component on a protective layer 21 in accordance with the present invention. As shown in Fig. 12, the substrate 80 is a dielectric layer located on the lower layer, and the material of the metal contact 81 is, for example, aluminum. The opening 82 can be formed by a patterning step through the protective layer 84, and the opening 82 can expose the metal contacts 81. For example, the polymer layer 86 of the polyimide may be formed on the protective layer 84 and the metal contact 81, and the polymer layer 86 such as the polyimide may be completed by spin coating, for example, or This can be done by screen printing, or it can be done by pressing the polymer dry film. Figure 13 is a diagram showing the process of forming the opening 87 of the polymer layer 86, wherein the maximum width of the opening 87 of the polymer layer 86 is greater than the maximum width of the opening 82 of the protective layer 84 (see Figure 12, Figure 12), opening 87 has a sloped side wall 85. At the beginning, 'the opening 87 of the polymer layer 86 has a vertical side wall 85'. However, after the hardening step, the side wall 85 will assume a slanted pattern, while the opening 87 may be in the form of a semi-tapered shape, while the side wall 85 The tilt angle is, for example, 45 degrees or more 'substantially between about 5 degrees and 6 degrees. Further, the angle of inclination of the side wall 85 may be as small as 20 degrees. In this embodiment, the 'large vias may be through the polymer layer 86, such as a poly-imine, and aligned with the opening 82' of the lower layer of the protective layer 84. And also connected to the sub-micron metal layer in the lower layer. The size of the via lines of the sub-micron metal may gradually increase as the sub-micron metal layer is oriented toward the wide metal level. 1342598 Continuing to refer to Fig. 13, there is shown a method and metal structure for forming a connection line and an inductor member on a protective layer in accordance with the present invention. Firstly, (4) forming an adhesion/barrier layer 88 by means of an extinguishing bond, the material of which includes a contact alloy, a titanium nitride compound, a neon or a nitrogen compound, and the thickness of the adhesion/barrier layer 88 is, for example, 500 Å. (angStrom) to 5000 angstroms. Next, a seed layer 90, such as gold, may be formed by sputtering to the adhesion/barrier layer, wherein the thickness of the seed layer 90 is, for example, between 300 angstroms and 3 angstroms. Referring to Figure 14, a thick metal layer 92 may be formed by electroplating, such as gold, wherein the thickness of the thick metal layer is, for example, > m between 1 and 20 microns. Before the electroplating process is performed, a thick photoresist 94 is formed, and the thickness of the photoresist 94 is greater than or equal to the thickness of the thick metal layer. Through the lithography step, the photoresist 94 exposes the seed layer 9〇, and then The thick metal layer 92 is formed by electroplating. After the electroplating process, the photoresist 94 can be removed, as shown in FIG. The adhesion/barrier layer 88 and the seed layer 90 can be removed by a thick film, as shown in Fig. 16. In the illustration, only one of the coils of the inductive component 40 is not shown, but it will be appreciated by those skilled in the art that the entire inductive component 40 can be completed in this step. As shown in Figs. 17 and 18, the thick metal layer 92 may be a portion of the region which is only filled in the opening 87. Thus, an inductance element having a high line density and a fine line can be designed. In the present embodiment, the size D of the opening 87 23 1342598 of the polymer layer 86 is, for example, about 15 microns. The gate pitch of the metal line of the inductor element 40 is as small as 4 microns. Therefore, patterning the n-metals located in the polymer layer 86 is also an important feature of the present invention. As described above, an adhesion/barrier screen 88 and a seed layer 9G such as gold may be formed by sputtering, and also formed as a photoresist %, such as ^

The figure shows. A thick metal layer 92, such as gold, can then be formed electrically. Thereafter, the fine 95 can be removed and the adhesive/barrier layer 88 and the seed layer 9 previously positioned below the level 95 are removed, as shown in FIG.

In another embodiment of the invention, copper may be utilized as the material for the thick metal layer of the metal deposited on the protective layer. · The structure of the beginning is as shown in Fig. 13 'Next, please refer to Figure 19, which can be formed in a way such as chrome or a bonding/barrier layer (10), the thickness of which is, for example, between 20,000 Å and 2,000 Å. The 'then' can be formed by sputtering, for example, a copper seed layer 102 having a thickness of, for example, between 2 ga and (10) (8) angstroms. Then, a thick metal layer such as copper can be formed by means of electric ore, and the thickness thereof is, for example, between 3 micrometers and 20 micrometers, and the photoresist can be defined by the photoresist and the conventional lithography process. Area. Next, a metal top layer 1 比如 6 such as nickel may be selectively formed by electroplating, wherein the metal top layer 106 has a thickness of, for example, between oj and 3 micro. Referring to Figure 20, the photoresist 94a can then be removed and exposed to a seed layer 102 such as copper. Next, a thick metal layer 1 〇 4 24 such as copper may be used as an etch mask, and the adhesion/barrier layer 100 and the seed layer 102 such as copper may be removed by etching, as shown in FIG. If a metal top layer 1〇6 such as nickel is formed, the metal top layer 1〇6 can serve as an etch stop layer during the etching of the adhesion/barrier layer 100 and the seed layer 1〇2. Etching the faster etchant to etch the seed layer 102' can reduce the consumption of copper metal of the thick metal layer 1〇4. In the illustration, only one of the inductor elements 4A is shown, but it is known to those skilled in the art that the entire inductor element 4 can be completed in this step. As shown in FIGS. 22 and 23, the thick metal layer 104 may also be a portion filled only in the opening 87, as shown by a portion of the thick metal layer 92 in which the thick metal layer 1〇4 is filled in the opening 87. As previously described, an adhesion/barrier layer 1 and a seed layer 102 such as copper may be formed by sputtering, and a photoresist 95a' may also be formed as shown in FIG. A thick metal layer 1 比如 4 such as copper can then be formed by electroplating. Thereafter, the photoresist 95a can be removed, and the adhesion/barrier layer 1 and the seed layer 1〇2 are etched away, as shown in Fig. 23. Referring to Figure 5a, the metal structure is as described above. It is noted that a polymer layer such as polyimide is not formed on the protective layer 18 in this embodiment. The inductive element 19a is formed directly on the protective layer 18, wherein the lower the resistance of the metal line used to form the inductive element 19a, the better, in order to achieve the above purpose, when the inductive element 19a is fabricated, it can be formed, for example, 25 A thick metal layer of gold. In the above design, the quality parameter of the electronic component 19a can be raised from 5 to 2 for the application of 2.4 GHz. As mentioned above, the inductive component 19a of FIG. 5a can be connected to other components, such as a contact located at a lower layer, as shown in FIG. 4, and the connecting direction of the inductive component 19a can be "one." The structure of the structure, as shown in the figure, or the connection direction of the inductance element 19a may be a "all upwards" structure, as shown in Fig. 24b. A polymer layer (not shown) may be selected. Formed on the inductive component 19a. In addition, the polymer may be formed under the inductive component and not formed elsewhere on the protective layer, so that the polymer block of a small area is larger than the polymer layer having a larger area. Having a lower internal stress, as shown in FIG. 5b or FIG. 5c, which respectively show a cross-sectional view and a top view of an inductance element formed on a polymer block according to the present invention. Each polymer block has at least one Inductive component, wherein FIG. 5c illustrates the first inductive component 40a and the second inductive component 40b. Referring to FIG. 5b, the polymer block 20a is formed by depositing a polymer layer and then patterning the polymer layer. So shaped The polymer block 20a can be formed by screen printing or by pressing a dry film. After forming the polymer block 20a, the inductive elements 40a, 40b can be formed on the polymer block. 20a. The external connection method of the inductive elements 40a, 40b of FIG. 5b may be as described in 1342598, wherein the inductive element 40b has, for example, two contacts facing downward, 43a 'which can be connected to the electronic contacts 16 * Domain element does not have: a contact, but can be connected up to the external circuit, as described above, , Figure 5c depicts a top view of the inductive component not in accordance with the present invention, and the -5b system A cross-sectional view along section line 5b-5b in Fig. 5c. As shown in Fig. 5c, the polymer blocks 20a are isolated from each other, and the polymer block 20a is formed only under the inductance element, and the other The germanium region of the polymer block 2〇a is not formed, and the protective layer 18 may be exposed to the outside. Another polymer protective layer (not shown) may be selectively formed on the inductive elements 40a, 40b. The polymer block shown in Figure 5c can also be shaped Other components, for example, may be formed under passive components such as resistive components and capacitive components. Figures 6a and 6b illustrate another preferred embodiment in accordance with the present invention. #如图6a The dielectric layer polymer layer 47 is shown to be between the bottom layer coil 60 and the upper layer coil 62, while the polymer layers 20, 47, 64 may be made of the material described above. In the uppermost polymer layer 64, the upper layer coil 62 may be exposed. Fig. 6b is a cross-sectional view showing the structure of the wafer in accordance with another preferred embodiment of the present invention, wherein the bottom layer coil 60 may be formed directly on the protective layer 18. Figure 6c shows that the inductive component 19a is a perspective view of a solenoid in the form of a solenoid, wherein the inductive component 19a is formed on the protective layer 18, and the inductive component 19a includes the via metal 23 and the underlying metal structure. 25 and top metal structure 27, wherein the t-via metal 23 is in the thick polymer layer polymer layer 20, which is a vertical metal structure. The underlying metal structure 25 and the top metal structure 27 can be electrically connected through the via metal 23. Figure 6d is a perspective view showing the inductance element 19a in the form of a solenoid, wherein the inductance element 19a is formed on the first polymer layer 29, and the inductance element 19a has the via hole metal 23, which is formed in the first polymerization. In the second polymer layer on the layer 29. Fig. 6e is a top plan view showing the inductor element in the form of a solenoid in Fig. 6c and the figure, wherein the underlying metal structure 25 and the top metal structure 27 are electrically connected through the via metal 23. Fig. 6f is a cross-sectional view showing the inductance elements of Figs. 6c to 6e, wherein Fig. 6f is a cross-sectional view taken along line 6f_6f of Fig. 6e. Referring to Figures 6g and 6h, there are shown schematic views of a toroidal form of an inductive component in accordance with the present invention, wherein the inductive component is similar to a wrap around a shape. In Fig. 6g, a schematic perspective view of the inductive component is shown, wherein the inductive component 68 includes a via metal 23a, an underlying metal structure 25a and a top metal structure 27a', and the via metal 23a is connected to the underlying metal structure 25a and the top metal. Structure 27a. 28 1342598 The first view of the inductive component 68 in the form of a torus (t〇r〇idai) in the 6th diagram is not intended. The winding characteristics of the inductive component 68 have been described in the prior preferred embodiment and will not be described here. Fig. 7a is a schematic cross-sectional view showing the formation of a capacitor element on a base semiconductor substrate ίο according to the present invention, the rim layer of which is located on the layer ΐδ. The conductive connection, the wiring layer metal/dielectric layer 14 and the contact electronic contact 16 are on the base semiconductor substrate 10, and the Laminated layer 18 is formed on the conductive connection layer metal/dielectric layer 14 and the protective layer 18 With an open σ, the contact electronic contact 16 can be exposed. As is well known to those skilled in the art, the capacitive element is composed of a lower electrode, a capacitor dielectric layer and an upper electrode, and the capacitor dielectric layer is located between the upper electrode and the lower electrode. The capacitive element shown in Fig. 7a has a lower electrode 42, a dielectric dielectric layer 46 and an upper electrode 45. The upper electrode 45 and the lower electrode 42 are formed, for example, by forming a thick metal layer of gold or copper by electroplating as described above, and a polymer protective layer such as polyimide may be selectively formed on the capacitor element. The contact of the capacitive element to the external connection is as described above, (the contact of the capacitive element is, for example, a downward connection, a top-to-bottom connection or an upward connection). The thickness of the lower electrode 42 is, for example, between 微米. 5 μm and 20 μm, and the thickness of the dielectric layer 46 is, for example, between 500 Å and 50,000 Å, and the thickness of the upper electrode 45 is, for example. It is between 〇.5 levy to 20 microns. 29 1342598 If the structure of the capacitive element is formed on the protective layer as shown in Fig. 7a, it has the following advantages: 1. The loss of the memory and the parasitic capacitance of the underlying substrate can be reduced. 2. _ _ thick wire layer of the capacitor element of the electrode, so can reduce, less, the resistance value of the capacitor component, especially in the field of wireless. 3. It can form a high dielectric constant and continue to replenish the money between the electrode and the lower hiding. The material is, for example, titanium dioxide (Ti〇2), pentoxide oxide (Ta2〇5), high molecular polymer, nitrogen. The ruthenium compound (S·) or the oxonium compound (Si〇2) or the like can increase the capacitance value of the capacitor element. The capacitive element as shown in Fig. 7a can also be formed on the polymer layer on the protective layer 18, the concept of which is similar to that of the polymer element 40 formed on the protective layer is as described in Fig. 4. The structure on layer 2〇. Dielectric layer 46 is a material of surface dielectric constant, such as deposition of nitrogen bismuth compounds (3 groups) by chemical meteorological deposition, tetraethane oxymethane (TEGS), pentoxide 5 | ), titanium dioxide (TiQ2), iron titanate SrTi〇3) or oxynitride compound (Si〇N). 7b and 7c are schematic cross-sectional views showing the capacitor element. As shown in FIG. 7b, a thick polymer layer polymer layer 20 may be formed on the protective layer 18, and the thick polymer layer polymer layer 2 may be exposed through the patterning process to expose the contact electronic contacts 16 The diameter of the via of the polymer layer 2 is smaller than the diameter of the opening of the layer. However, in the case of a good combination, the conductive layer 20 is in contact with the opening of the protective layer, and the diameter of the via hole of the polymer layer 20 is larger than the diameter of the opening of the protective layer. By the configuration of the thick polymer layer polymer layer 20, the arrangement of the lower electrode 42, the upper electrode 45 and the dielectric layer 46 can be moved upwards to be equal to the thickness of the polymer 2G, so that the capacitive element configuration can be on a more heterogeneous substrate. local. As previously mentioned, the thickness of the polymer layer 20, such as _imine, can be between 2 microns and 150 microns. In this way, the distance between the capacitor element and the metal wiring structure and the dream substrate can be increased, so that the occurrence of parasitic capacitance can be greatly reduced. Figures 7a and 7c show that the contacts of the capacitive element are connected downwards, and the capacitor 7L can also be connected in an up-down manner, as shown in Figure 25, or the capacitive elements are facing upwards. Connect, as shown in Figure 24b. The upper electrode 45 of the capacitive element as shown in FIGS. 7a to 7c can be electrically connected to a circuit via the opening 37 of the polymer layer 35 on the upper electrode 45, as shown in the cross-sectional structure of FIG. Show. The dielectric layer polymer layer 35 is formed on the upper electrode 45 of the capacitor element, and the upper electrode 45 of the capacitor element is exposed through the opening 37 of the polymer layer 35 of the dielectric layer, so that the upper electrode 45 and an external line are formed. Electrical connection. A polymer protective layer (not shown) can be selectively formed on the capacitor elements as shown in Figs. 7a to 7c. The δth diagram shows a schematic cross-sectional view of the base semiconductor substrate 1'. A protective layer 18 is formed on the base semiconductor substrate 10, and the resistive element 48 is tied to the layer 31 of the protective 31 1342598. As will be appreciated by those skilled in the art, the resistive element 48 is constructed of a material that provides electrical resistance and current can flow through the material. The material of the resistive element 48 is, for example, a nitrogen compound (TaN), a nickel-chromium alloy (NiCr), a nickel-tin alloy (NiSn), a tungsten (W), a titanium-titanium alloy (Tiw), a titanium nitride compound (TiN), and a complex (Cr). ), Chin (Ti), nickel (Ni) or button compound (TaSi). Among the above materials, 'nickel-chromium alloys provide the best temperature coefficient of resistance, which can be as small as 5 ppm/C. The length, thickness and width of the resistive element 48 can be designed for different applications. Instead, the resistive element 48 as shown in Fig. 8 can be configured by applying the concept of arranging capacitive elements as shown in Figs. 7a to 7c, wherein the resistive element 48 is formed on the protective layer 18. Figures 9a and 9b illustrate the formation of a thick polymer layer in accordance with the present invention. A schematic cross-sectional view of resistive element 48 on object layer 20, wherein resistive element 48 can be coupled to contact electronic contact 16. By increasing the distance between the resistive element and the substrate (the increased distance is substantially equal to the thickness of the polymer layer 2〇), the parasitic capacitance effect between the resistive element and the substrate can be reduced, thus improving the resistance of the resistive element. (Because the loss of the private capacitor can be called, the electrical performance under high frequency operation can be improved). The contacts of the resistive element 48 as shown in Fig. 8, Fig. 9a and Fig. % are all connected downward. However, the resistive element 48 can also be an up-down connection, as shown in FIG. 26 or the contacts of the resistive element 48 are connected upwards, and the 32 can refer to the inductive component 40 as shown in FIG. 24b. The concept of connection. The other polymer layer can be selectively formed on the resistive element 48 as shown in Fig. 8, the 9a and 9b, thereby protecting the resistive element 48. Referring to Figures 10 and 11, there is shown another process on the protective layer in accordance with the present invention. In this embodiment, the contact electronic contact 16 can be electrically connected to the electronic component located thereon by forming a bump, such as an inductive component, a capacitive component, a resistive component or other passive components. The components are electrically connected. And connecting the metal bump underlying metal 5〇 can be formed in the opening of the polymer layer 20, wherein the opening of the polymer layer 20 is aligned with the opening of the smaller protective layer 18, so that the metal bump underlying metal 50 can be connected with The contact electronic contacts 16 are connected for use as bump underlying metal (UBM). The step of reflowing can be performed after the flux is formed on the bumps 52 by a conventional electrical recording process, a ball placement process, or a screen printing process. Next, the finished electronic component 54 can be attached to the bump 52. The electronic component 54 that has been fabricated has solder 53 so that the bondability can be improved. The above process is similar to the surface bonding technique commonly used in the bonding of electronic components to printed circuit boards. The finished electronic component 54 is, for example, an inductive component, a capacitive component or a resistive component. Fig. 11 is a view showing the structure in which the completed electronic component 54 is directly formed on the protective layer 18 by using the bump 56 and the bump underlayer metal 50. Since the electronic component 54 that has been fabricated is not formed on a printed circuit board as in the prior art, the electronic tree 54 which has been completed as shown in the 10th is a healthy performance and has a high cost. The bump underlayer metal 50 may be a gold auditory structure as shown in Figures 12 to 23 of the present invention. However, if it is a thick mask, the thickness of the under bump metal 50 may be between 〇. Between 2 〇 micrometers, in the preferred case, the under bump metal 50 is a relatively thin size, so that after the 7G is formed, the bump material near the interface of the under bump metal 50 can be prevented from having a south. The concentration of gold β The configuration of the passive components described above has at least the following advantages: 1. Passive components of the present invention are provided because the fabricated electronic components can provide appropriate parameters and can be bonded to locations near the circuitry in the wafer. The design concept can achieve the performance of a truly systematic wafer. 2. Since the fabricated electronic component can be bonded to a position close to the line in the wafer, the occurrence of parasitic phenomena can be reduced. 3. In the present invention, since the fabricated electronic component having the appropriate design parameters can be selected to be mounted on the protective layer, such a design can reduce the resistance effect of the fabricated capacitor component and the completed inductor component, in order to reduce the resistance effect of the fabricated capacitor component and the completed inductor component. More clearly, 'the following is a description of the prior art and the present invention: The prior art uses a thin metal wire to make an inductive component, and if it is to reduce the resistance effect, a wider coil must be made, which would The surface area of the inductor 34 丄^42598 component increases. In addition, conventional techniques can have a phenomenon of parasitic capacitance of a large inductive component and have a severe thirst current loss in the substrate. However, the present invention uses a metal layer as a line, so that the resistance effect can be reduced. In addition, the polymer can also be placed between the passive component and the underlying structure. Thus, the parasitic effect can be reduced, and the resonance frequency can be increased due to the reduction of the parasitic effect, so that it is suitable for the operation of the high-frequency circuit. While the present invention has been described above in terms of the preferred embodiments thereof, it is not intended to limit the invention, and the invention may be modified and retouched without departing from the spirit and scope of the invention. The scope of isolation is subject to the definition of the scope of the patent application. [Simple description of the drawings] The first ride shows a cross-sectional view of the connection line structure according to US Patent Publication No. 6, No. 916. Fig. 2 shows a schematic cross-sectional circle formed on the thick polyimide layer in accordance with the inductive component of the present invention. Figure 3 is a top plan view of an inductive component in accordance with the present invention. Figure 4 is a schematic cross-sectional view of the wafer structure in accordance with the present invention, wherein the inductive component is formed on the thick polyimide layer and the conductive material is used to prevent the inductive tree from affecting the underlying layer. The cross-sectional view of the inductive component not in accordance with the present invention formed on the protective layer is shown. Figure 5b is a schematic cross-sectional view showing the formation of a plurality of inductive elements in accordance with the present invention on a layer of a barrier layer such as 35 1342598 South Molecular Polymer. Figure 5c depicts a top view of a plurality of inductive elements not in accordance with the present invention formed on an insulating layer such as a two molecule polymer. Figure 6a is a cross-sectional view showing the transformer according to the present invention formed on a layer of a polymer such as a polymer layer, wherein the insulating layer is hidden on the protective layer. The line in the lower position is on the protective layer. Fig. 6c is a diagram showing the shape of a solenoid in the shape of a solenoid which is not in accordance with another preferred embodiment of the present invention. Figure 6d is a perspective view of a solenoid-shaped inductive component not in accordance with another embodiment of the present invention, wherein the inductive component of the towel is on an insulating layer such as a polymer, and the insulating layer is in the health On the floor. Figure 6e is a top plan view of the inductive components of Figures 6c and 6d. Figure 6f is a schematic cross-sectional view along section line 6f 6f in Figure 6e. Fig. 6g is a perspective view showing the inductance of the toroidal coil in accordance with the present invention. The 6h'' indicates that the inductive element of the toroidal coil shape in Fig. 6g is not intended. Fig. 7a is a schematic cross-sectional view showing the 36 Ϊ 342598 formed on the protective layer by the capacitor element according to the present invention.

7a-7b to 7c are schematic cross-sectional views on the insulating layer of the polymer according to the present invention on the protective layer. The capacitive element is formed in the ratio

Figure 8 is a schematic view showing the formation of a resistive element in accordance with the present invention on a protective layer. The Fig. 9a and 帛% diagrams show that the resistive element according to the present invention is formed on a thick insulating layer such as a polymer, in which the thick insulating layer is tied to the protective layer.

Figure 10 is a schematic cross-sectional view of a wafer structure in accordance with the present invention in which the fabricated electronic components are interspersed with a thick insulating layer such as a high molecular polymer using surface bonds. 11th is a schematic cross-sectional view of the wafer structure of the present invention, in which the completed electronic component _ wire transfer technology is adhered to the protective layer.

Figs. 12 to 18 show the metal structure of the metal material in accordance with the present invention. The metal structure of the metal is passed through an insulating layer such as a polymer. 19 to 23 are schematic views showing the surface of a metal crucible made of copper in accordance with the present invention, wherein the metal structure is passed through an insulating layer such as a polymer. 37 1342598 Figures 24a through 24c illustrate another method of connecting an inductive component in accordance with the present invention. 25 and 26 respectively illustrate another method of connecting a capacitor* element and a resistor element in accordance with the present invention. [Main component symbol description] 10: germanium base semiconductor substrate 11: transistor 12: inner dielectric layer 13: metal wiring • 14: metal/dielectric layer 16: electronic contact 18: protective layer 19: opening. 19a: Inductive element 20: polymer layer 22: opening 20a: polymer block 23: via metal 23a: via metal 25: underlying metal structure 25a: underlying metal structure 27: top metal structure 27a: top metal structure • 26: line metal Connection line 28: line metal connection line 29: first polymer layer 22: opening '30: path 32: path - 34: path 35: dielectric layer polymer layer 36: opening 36a: open contact opening - - . .. · ... 36b: contact opening 37: opening. . . . . ' : ί 38 : opening 38a : open contact opening 38b : contact opening 39 : contact 38 1342598 40 : inductive element 40a : first Inductive component 40b: second inductive component 40c: inductive component 41: contact 41a: contact j·0 42: lower electrode 43: contact. 43a: contact 44: conductor 44a: conductive sheet 45: upper electrode 46: Electrical layer 47: second polymer layer • 48: resistance element 50: connecting metal bump underlying metal 52: bump 53: solder 54: fabricated electronic component 56: bump 60: bottom layer coil 62: upper layer coil 64: polymer layer 66: opening 68: inductive element 80: substrate 81: metal contact • 82: opening 84: protective layer 85: side wall 86: polymer layer 87: opening 88: adhesion/barrier layer 89: extension line 90: seed layer - 92: thick metal layer 94: photoresist 4 94a : photoresist 95 : photoresist 4 i 95a : photoresist 100 : adhesion / barrier layer 39 1342598 102 : seed layer 104 : thick metal layer 106 : metal top layer

Claims (1)

1342598 * Announcement No. 096100433 Patent Application Chinese Patent Application Renewal (January 100) X. Patent Application Range: 1. An electronic component comprising: a substrate; a transistor 'on the surface of the substrate A metal line structure is positioned above the germanium substrate. A protective layer is positioned above the transistor above the metal line structure; a first polymer layer is positioned over the protective layer, the thickness of the first layer Between 2 microns and 150 microns, the thickness of the first polymer layer is greater than the thickness of the protective layer; A an inductive component comprising a coil on the polymer layer, the inductive component The invention comprises a titanium-containing metal layer, a gold layer and a second full layer having a thickness between 1 micrometer and 20 micrometers, wherein the first gold layer is on the titanium-containing metal layer, and the second gold layer is in the a gold layer; and a second polymer layer on the inductive element. 2. For the electronic component described in claim 1 of the patent application, the φ-wire wire is connected to the inductance component. 3. Connect the inductive component as a bump as described in the patent application scope.电感4. The inductive component according to the scope of claim 2 includes: a first electronic contact of the circuit structure exposed by the first opening connected to the first opening of the protective layer And a second contact connecting a second electronic contact of the metal circuit structure exposed by one of the second openings in the protective layer. 5. The electronic component of claim 1, wherein the I43018-1000H4.doc 1342598 inductive component comprises: a first contact 'connecting the protective layer - the electronic contact of the metal circuit structure; And the structure m connection of the σ violent road _ the external electric service is not connected to the electronic component described in the metal line electric second, the (four) and the second contact are connected to a foreign brother-connected f 'and... Point structure. 9B boundary 4 is not connected to the gold I line junction / please refer to the electronic component described in the patent (4), the thickness of the 3 titanium metal layer is between 500 angstroms and 5 angstroms. ', ° Chu Ru as applied for the electronic (4) mentioned in the first paragraph of the patent scope, the thickness of the first gold layer is between 300 angstroms and 3000 angstroms. VIII. The protection of the electronic component of claim 1, further comprising a transistor in or on the substrate. An electronic component comprising: a semiconductor substrate; a transistor disposed on a surface of the semiconductor substrate; a metal wiring structure positioned over the semiconductor substrate; "a protective layer positioned above the metal wiring structure and Above the electric day-day peptide, and the protective layer comprises a Nitrogen compound, the upper surface of the protective layer has a first region and a second region; a first polymer block is located in the first region And contacting the first domain. The first region of the first layer is not located below the first polymer block, the first polymer block has a flat upper surface and a side wall, the side 143018-1000H4.doc • 2· Connected, the lower end of the side wall and the first element of the insulative element - the electric component is located on the flat upper surface of the electronic component described in the second and second items, more on the block, element = The second polymer includes a polymer layer on the inductive component; a kilogram: an electronic component of the package, and further comprises: I4. The electrical component as described in claim U includes; a contact, and the contact Connect the protective layer: the metal wire from the road Structure 15. Day 15. The two inductive components mentioned in the scope of patents include the thickness from 1 micron to the core 4: 16. The electrical energy as described in the scope of claim 5! L: Inductive components including thickness 3 micrometers to 2. micrometers 4: ^ 17. The electronic component as described in the scope of claim 5, the sidewall of the s-hai is an inclined side wall. /, medium ^ 18. As described in claim 1 of the patent scope The electronic component, the tilt angle of the sidewall of the crucible is about 5 to 6 degrees. 19. The semiconductor substrate according to the scope of claim 5 is a substrate. The component comprises: a germanium substrate, 143018-I000114.doc 1342598 - a transistor disposed on a surface of the germanium substrate; a metal wiring structure located above the substrate; a transistor layer located on the gold I line Above the structure and in the second layer of the character "on the protective layer, and the thickness of the first-poly-layer layer is greater than the thickness of the protective layer; and the member includes", located at the first On the polymer layer, the inductor element is all line =, and the two contacts The external component is connected without the metal wiring structure, and the inductive component includes a coil. The electronic component described in the 20th patent of the "Patent", the thickness of the M U ^ layer in the basin is between 2 microns and 15 G microns. The electronic component of the second aspect of the invention is further characterized in that the layer is disposed above the inductive component. The electronic component of claim 22, wherein the two contacts respectively expose the two contacts. A set of wire conductors is connected to the external component disk f package 25. For example, one of the application vehicles 4, the outer, and the 4th contact. An electronic component as described in the second paragraph of the target, and one of the external component and the two contacts. The inductor is a 1': factory!, the electronic component described in item 20, wherein the layer. A gilt is a gold between 1 micrometer and 20 micrometers. The inductor element: surrounds the electronic component described in item 20, above the layer. 3 a layer of titanium metal and a layer of gold in the titanium-containing metal; a layer of copper 143018-1000114.doc 1342598 between 3 micrometers and 20 micrometers. 29. The electronic component of claim 20, wherein the protective layer comprises a nitrogen hydrazine compound. 30. The electronic component of claim 20, wherein the first polymer layer has a sloped sidewall. The electronic component of claim 20, wherein the first polymer layer has a sidewall having an oblique angle of between about 5 ft and 6 〇. 32. An electronic component comprising: a germanium substrate; a transistor 'disposed on a surface of the germanium substrate; a metal wiring structure' positioned above the germanium substrate; a protective layer positioned above the metal wiring structure and Above the transistor; an inductive component positioned above the protective layer, the inductive component comprising a coil; and a wire conducting wire connecting a first contact of the inductive component. 33. The electronic component of claim 3, further comprising a polymer layer between the protective layer and the inductive component. 34. The electronic component of claim 32, further comprising = above the inductive component, and an opening in the polymer layer exposing the first contact. The in-layer-opening is exposed to two points and the point is connected to the protection 36. The inductive element according to claim 32 includes a second contact bun component, wherein the second contact is connected to an external I43018 .1000114.doc The component is not connected to the metal wiring structure.兮雷3咸7. For example, please refer to the electronic component described in claim 32, wherein the layer=the case includes a titanium-containing metal layer and a gold layer in the titanium-containing metal, as described in claim 32. The electronic component, the mid-layer germanium inductor 7L, includes a thickness of between 1 micron and 2. A gold element between the micrometers. 39. The electronic component according to claim 32, wherein the inductive component comprises a thickness of between 3 micrometers and 2 micrometers. The electronic component described in the bean 5 hai protective layer includes a nitrogen compound. 41. An electronic component comprising: a substrate; a first polymer block positioned above the germanium substrate; and a first inductive component positioned above the first polymer block, the first polymer block The shortest distance from each point on the edge to the first inductive component is less than the maximum lateral dimension of the first inductive component, the first inductive component comprising a coil. 42. The electronic component of claim 41, wherein the first polymer block of the shai is between 2 micrometers in thickness! Between 5 〇 micron. 43. The electronic component of claim 41, further comprising a second polymer block above the germanium substrate, and a second inductive component positioned above the second polymer block, and the second The polymer block and the first polymer block are separated from one another. 44. The electronic component of claim 43, wherein the second polymer block has a thickness between 2 microns and 15 microns. 143018-1000114.doc • 6 - 1342598 Included - I5·: The electronic component # μ ♦ compound layer described in item 41 of the patent application is located above the first inductance element, and further includes 46. The 41st first inductance element comprises a titanium-containing gold eyebrow element, wherein the metal element is above the metal layer. ,,, (3) and - gold layer in the titanium-containing, the 47's application of the electronic range 1 described in the scope of the electronic component 1 by - gold layer.丨, 1 imitation is less than 20 microns 48. As claimed in the scope of the 4th 5th - inductance elements include thicknesses of 3, ^ ^ λ sub-pieces, of which - copper layer. In addition, the 〜 3 3 3 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = 3 3 3 3 3 3 The inner-opening is connected to the metal circuit block and the protective layer. The electronic component described in the 49th item of the patent application, the second electric device has a contact, and the contact is connected. The metal wiring structure is not connected. A few pieces of divination 52. The electron far protective layer as described in claim 49 includes a nitrogen hydrazine compound. In the case of the burdock 53. The electronic component of claim 41, wherein a transistor is disposed on the surface of the substrate. 54_ - an electronic component comprising: a stone substrate; 143018-1000114.doc 1342598 a first polymer block positioned above the substrate, and the first polymer block having two parallel two first edges and two parallel a second edge; and an inductive component positioned first above the first polymer block, '^ 〜 八 厶 y yj, the shortest distance from the first edge to the first inductive component is less than the first The maximum lateral dimension of the inductive component, the shortest distance from the second edge to the first inductive component is less than the maximum lateral dimension of the first inductive component. The first inductive component includes a coil. 55. The electronic component of claim 54, wherein the first polymer block has a thickness between 2 microns and 15 microns. 5: The electronic component of claim 54, wherein the first inductive component is located on the first polymer block, and the shortest distance from the second edge to the second inductive component is less than the first The maximum lateral dimension of the two electrical components, wherein the second edge-to-piece shortest distance is less than the maximum cross-section of the second inductive component, as described in claim 54 of the second inductive component, including a second polymer block Above the crucible substrate, and a component is positioned above the second polymer block, an inductive first polymer block separates the polymer block from each other and the 58. The second polymerization is as described in claim 57. The thickness of the block is "the same; the polymer layer is in the first inductive component, and the package is included in the first inductive component." The metal layer and a: η' metal layer above. Meng layer in shai Hanqin 61. As claimed in the patent element, the electronic components described in the article, I430I8-10001J4.doc !342598 between 1 micron and 20 micrometers, 3 micron to 20 micron The first inductive element between the two comprises a thickness of - gold layer. 62. The scope of claim 54 is that the first inductive component comprises a thickness of between - a copper layer. = If the electronic component of the 54th item of the application for the special rhyme is included, a metal circuit structure is located above the base of the crucible, and = is above the line structure, and the first polymer block is at = 64. The electronic component described in claim 63, the hole-inductive element is transmitted through the first polymer block and the protection One of the openings is connected to the metal wiring structure.曰 65. The electronic component of claim 63, wherein the first inductive component has a contact, and the contact is connected to the open, and the metal wiring structure is not connected. 66. The electronic component of claim 63, wherein the protective layer comprises a nitrogen hydrazine compound. 〃 T 67. The electronic component of claim 54, wherein a transistor is disposed on a surface of the crucible substrate.匕68. An electronic component, comprising: a germanium substrate; a polymer block positioned above the germanium substrate; and a plurality of first inductive components 'located above the first polymer block, the first inductive component Is the all-component above the first polymer block, and the shortest distance from the edge of the first polymer block to one of the first inductive elements is smaller than the most & dimension of the first inductive elements The first inductive component includes a coil. The electronic component of claim 68, wherein the first polymer block has a thickness of between 2 micrometers and 丨5 micrometers. 70. The electronic component of claim 68, further comprising a second polymer block above the germanium substrate, and a second inductor 70 positioned above the second polymer block, and the first The two polymer blocks are separated from the first polymer block from each other. The electronic component of claim 7, wherein the second polymer block has a thickness of between 2 micrometers and 15 micrometers. The electronic component of claim 68, further comprising a polymer layer above the first inductive component. The electronic component of claim 68, wherein the far-inductive component comprises a titanium-containing metal layer and a gold layer over the metal-containing layer. 4 I- = · As claimed in claim 68, the j-inductive element comprises a gold layer having a thickness of between 1 micrometer and 2 microseconds. J. The electronic component described in item 68 of the patent application scope, the electronic component described in item 68 of the patent scope including thickness between 3 micrometers and 2 micrometers. Above the base of the stone eve, and -: 镬t = above the line structure, and the first polymer block is electrically connected to the item, wherein the block and the block are in the The first polymer 781ΐ is open to connect the metal wiring structure. The electronic component described in claim 76 of the patent scope, wherein 143018-l〇〇〇n4.doc ° some of the first-inductive components are one of t and the right one is connected to an external component and t, g /, The contact is connected to the edge of the metal circuit structure. As described in the scope of claim 76, the protective layer includes a nitrogen hydrazine compound. , the electronic components of the jin, 80. If the scope of the patent application is 68, +, 々 + — - the crystal is placed on the surface of the stone 基底 substrate, and the package 8j · a method of forming electronic components, The method comprises: providing a substrate, a metal line located on the base structure and a metal line above the gold light path structure, wherein the polymer layer is formed on the protective layer: The step of spin coating and the electro-deductive element are above the first polymer layer, and there is no component in the first polymer layer between the two; The inductive element forms a first metal layer on the first polymer layer; the first metal layer on the first metal layer in the resist layer and the opening in the opening of the optical gate exposes the first metal layer; The first metal layer exposed by the opening of the second metal layer is removed; and the second element is not removed under the second metal layer. 'Where the formation of the first-metal layer includes - splash (four) process; ^ square 83. If the patent application Item 81 of the electronic ',, Charon formed in the second metal layer comprising - an electroplating process. 7: The electronic component forming method 143018-1 〇〇〇 η 4.doc -11 · 1342598, wherein the forming the first metal layer comprises the first polymer layer. The method of claim 81, wherein the forming the second metal layer comprises forming the second metal layer over the first metal layer exposed by the member. The ninth-gold layer is in the opening 8 ′′: the electronic element method described in claim 81, wherein the second metal layer is formed over the first metal layer exposed by the cladding. Correction - Copper layer In the opening method, the electronic component described in item 81 is formed into a second polymer layer on the inductance element. The method further encloses the electronic component forming component described in item 81. The inductive method is formed by a wire-forming process-wire bonding wire. The electronic component forming body described in claim 81 is also formed as a bump on a contact point of the inductor component. The protective layer of the electronic component described in Item 81 of the Patent Application No. 81, which is incorporated herein by reference. The method of claim 91, wherein the electronic component forming body according to claim 81 further comprises a transistor disposed on a surface of the crucible substrate. 92. An electronic component comprising: a germanium substrate; a metal wiring structure positioned over the germanium substrate; a protective layer positioned over the metal wiring structure; and a germanium-inductive component 'located above the protective layer' The inductive component includes a gold layer having a thickness between 1 micrometer and 20 micrometers, and the inductive component includes a coil. 93. The electronic component according to claim 92, further comprising (4) 018. 丨 GGG114.doc -12- including a layer of the compound layer in the protective layer and the gate of the electric component Between 2 micron and 2%, such as the application of the patent range, the first polymer layer is above the inductive component, wherein the inductive component comprises a first connector. The first layer of the protective layer is exposed by the first opening of the first opening of the first layer of the first layer of the first layer of the first layer of the first layer of the first layer of the first layer of the protective layer: a second electronic contact. One open 97. As claimed in claim 92, the inductive component includes a first connection: a sub-;:, a structure, the second junction i2:; the metal circuit structure. (4) The external component is not connected to the electronic component described in item 92 of the metal circuit junction, and the t-inductance component includes a first contact and a second contact, and the midpoint is connected to the second contact. __ q first connection. - connecting the external reading without connecting the metal wiring junction as described in claim 92. The electronic sensing element comprises - a metal containing layer, the containing metal: in i: 100. A wire harness is connected to the inductor (4). The electrons as described in claim 92 include a bump located at a junction of the inductor component.牛更1〇2. The electronic layer described in claim 2, the protective layer of the 143018-1000H4.doc -13- 1342598 includes a nitrogen ruthenium compound. 103. The electronic component of claim 92, comprising a transistor disposed on a surface of the crucible substrate. 104. A method of forming an electronic component, comprising: providing a germanium substrate, a metal wiring structure positioned above the germanium substrate and a protective layer positioned above the metal wiring structure; and σ forming an inductive component in the protection Above the layer, the inductive component comprises a coil, wherein the method of forming the inductive component comprises: raising a metal layer over the protective layer; forming a photoresist layer on the metal layer and opening the opening Exposing the metal layer; forming a germanium layer having a thickness between 1 micrometer and 20 micrometers above the metal layer exposed by the opening; removing the photoresist layer; and removing the gold layer not under the gold layer The metal layer. The electronic component method of claim 1, wherein the forming the metal layer comprises a sputtering process. The electronic component method of claim 104, wherein the forming the gold layer comprises an electroplating process. / 107. The electron element = layer 所述 as described in claim 1 〇 4: the formation of the metal layer comprises forming a titanium-containing metal layer in the 108. The electrons as recited in claim 1 〇 4 The method further includes forming a polymer layer on the protective layer: forming the inductive component on the polymer layer. The method of claim 109. The method of claim 1, wherein the forming of the polymer layer comprises a plurality of spin coating steps f 143018-1000114.doc -14 - 1342598 • in the inductive component There is no metal layer in the polymer layer between the protective layers. 110. The electronic component forming method of claim 108, further comprising forming a polymer layer on the inductive component. y 111. The electronic component forming method of claim 104, further comprising forming a wire bonding wire to connect the sensing component by using a wire bonding process. 112. The electronic component forming method of claim 1, further comprising forming a bump on a contact of the inductor component. 113. The method of forming an electronic component as described in claim 1 wherein the protective layer comprises a nitrogen hydrazine compound. 114. The electronic component forming method of claim 1, further comprising a transistor disposed on a surface of the germanium substrate. 115. A method of forming an electronic component, comprising: providing a germanium substrate, a metal wiring structure positioned above the germanium substrate, and a protective layer positioned above the metal wiring structure; 'σ forming an inductive component in the protective layer Above, the inductive component φ is a coil; a first polymer layer is above the inductive component, and a first opening in the first polymer layer exposes the inductive component point; After the polymer layer, a bump underlayer metal (UBM) is formed in the first opening; and after the under bump metal is formed, a bump is formed to connect the joint. 116. The electronic component forming method of claim 115, wherein the method of forming the inductor component comprises: I430JS-I000J 14.doc • 15- forming a first metal layer above the protective layer; On the first metal layer, and on the light p and the layer, an opening violently exits the first metal layer; the metal ϊ: the second metal layer is exposed at the second opening to remove the light a resist layer; and removing the first metal method not under the second metal layer. The electrical component formation 118 described in claim 116, + forming the first metal layer includes a sputtering process. 118. The method of claim 116, wherein the forming the second metal layer package==piece shape* method forms the first metal layer package over the protective layer. Forming - Titanium-Containing Metal Layer The material described in the scope of claim 116 is formed. The forming of the second metal layer includes forming a gold layer over the first metal layer exposed by an opening. The electronic side of the invention is described in paragraph 121 of the application of the fourth metal layer, wherein the second metal layer is formed over the first metal layer exposed by the opening. The method of claim 122, wherein the method of forming the inductive component comprises: depositing a portion of a titanium-containing metal layer over the protective layer; sputtering a first gold layer at The titanium-containing metal layer is on the first gold layer: and one of the second openings exposes the first gold layer; the thickness of the electric clock in the nine-resist layer is between 1 micrometer and 2 〇micron H second gold layer 143018-1000114.doc •16· on the first gold layer exposed by the second second opening D; removing the photoresist layer; removing the first layer not under the second gold layer a gold layer; and removing the titanium-containing metal layer not under the second gold layer. Method. 23. The electronic component formation of claim 115, further comprising forming a second polymer layer over the protective layer, the technique forming the inductive component on the second polymer layer. The method of forming an electronic component according to claim 123, wherein the forming the second polymer layer comprises multiple spin coating steps and is located between the inductor component and the protective layer There are no metal layers in the two layers. "Identity 125. The electronic component of claim 115, wherein the protective layer comprises a nitrogen ruthenium compound. 126. The electronic component according to claim 115, wherein the electronic component is formed, further comprising a transistor 127. An electronic component comprising: a germanium substrate; a transistor 'on the surface of the germanium substrate; a metal wiring structure positioned above the germanium substrate; Positioned above the metal line structure and above the electric day body; a first polymer layer located above the protective layer, the thickness of the layer is between 2 microns and 1 5G microns, ^^ The polysilicon layer is greater than the thickness of the protective layer, and the first polymer layer has an inclined sidewall; and an inductive component is disposed on the first polymer layer, the inductive component comprising a thickness of between 3 micrometers and 2 ― Between the micron-copper layer, the electric 1430J8-I000114.doc -17- Sense element includes the coil 128. As claimed in the 127th - including - wire bonding wire to the inductive component. ... hair clips 'more scoop 1 -29, such as the electronic component described in the scope of S 127, and more specifically, the bump is located at a junction of the inductive component. a first contact connecting the first-electrode contact of the illuminating circuit structure in the protective layer to extract the second electronic contact of the metal circuit structure, the violent road Φ 4 Φ is as stated The electronic component of claim 127, wherein the inductor component comprises: a first contact of the first layer, an electronic contact connecting the metal circuit structure in the protective layer; and a structure of the violent road The second contact is connected to an external component without being connected to the metal line 132. As in the electronic component described in claim 127, the inductive component includes a - contact and a second contact. And the second contact is connected to the second contact with an external component and is not connected to the metal circuit structure. The electronic component of claim 127, further comprising a component located on the inductor component Second polymer layer. 134' as claimed in the 127th article The electronic component, wherein the inductive component further comprises a copper-containing metal layer under the copper layer. 135. The electronic component of claim 127, wherein the protective layer comprises nitrogen shi Compound, 1430l8-1000H4.doc • 18-1342598 = 6. An electronic component forming method, comprising: providing a germanium substrate, a structure above the germanium substrate and a (four) layer above the metal wiring structure; The wire red germanium element is above the protective layer, and the inductive component comprises a coil. The method for forming the inductive component comprises: forming a metal layer over the protective layer; and forming a photoresist layer on the metal layer , ^• is located in the opening of one of the photoresist sounds violently out of the metal layer; 曰η gate two ίίΐ between 3 microns and 20 microns - the copper layer is above the metal layer Removing the photoresist layer; and removing the metal layer not under the copper layer. 137. The electronic method of claim 136, wherein the forming the metal layer comprises an axis process. y 138. The method of claim 136, wherein the forming the copper layer comprises a plating process.凡. 139. The electronic rut described in the scope of claim 136 includes forming a polymer layer over the protective layer, and then forming a S-shaped inductor 70 on the polymer layer. The electric method of claim 139, wherein the forming of the polymer layer comprises the polymer between the plurality of wide-sensing elements and the protective layer = yes, square, and The method of forming an electronic component according to Item 136 further comprises forming a polymer layer on the inductor element. 142. If the method of applying for patent scope 136 is used, it also includes the use of a dozen 峻 鼗 忐 忐 电 电 电 电 电 电 电 电 打 打 打 打 打 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 Method Method The electronic component described in the Japanese Patent Application No. 136 forms a bump on the contact of the electric component. 44. The electronic component described in claim 146, wherein the protective layer comprises a nitrogen hydrazine compound. (4) The electronic component described in the wide range of the patent application is disclosed in the above, and a transistor is disposed on the surface of the base of the stone. 143018·10 (8) 114.doc -20- Ί342598 Announcement fi -1' Ge. Replacement page of Chinese manual for patent application No. 096100433 (July 99) VII. Designation of representative representatives: (1) The representative figure of this case is: Figure 5c. (b), the representative symbol of the representative figure in this case is a simple description: 20a: polymer block 40b: second inductance element 41a: contact 18: protective layer '' 40a: first inductance element 40c: inductance element 43a :Contacts 8. Eight, if there is a chemical formula in this case, please reveal the chemical formula that best shows the characteristics of the invention: 143018-990728.doc