1290342 玖、發明說明： 【發明所屬之技術領域】 本發明說明一種半導體材料之薄膜轉移技術，尤其是轉移與該原始基板等面積、納 米等級厚度、高度膜厚均勻度、低缺陷密度的薄膜轉移技術。 【先前技術】 晶圓鍵合技術(Wafer Bonding Technology)能將兩晶格常數相差甚遠的單晶晶圓片 相結合，中間的鍵合介面不需使用任何膠，保持完全潔淨，卻仍能得到和基板一樣強度 的鍵合強度(Bonding Strength)，滿足電子及光電材料對介面屬性嚴苛的要求。 一九八八年美國的馬舒拉(Dr.W.Maszara)應用一P+型腐触停止層（EtchStop Layer)，來製作次微米厚度的鍵合式絕緣層砂晶圓（Bonding Etch-Back Silicon on Insulator; BESOI)，使得該技術（BESOI)應用範圍擴充至電子材料、光電材料及微機 電系統（MEMS)領域。然而該技術仍然有腐蝕停止層在各點之停止腐蝕機構工作時間 不一，影響膜厚均勻度（Total Thickness Variation, TTV)的缺點，成爲該材料應用於高度 積體電路製作最大的障礙。此外，該制程十分費時，不但浪費原始基板，而且其所産生 之廢棄溶液也易造成環境污染問題，使得製作成本居高不下。同一時期，IBM應用氧離 子直接植入法（Separation by Implantation Oxygen，SIM0X)來製作SOI材料方法，也得到 迅速發展。由於SIM0X有絕佳的薄膜厚度均勻度，使得BES0嵌術在製作高度積體電路 領域之應用幾乎被淘汰。 一九九二年，法國的布魯爾(Dr·M.Brnel)發明一種薄膜轉移技術，即「智切法」 (Smart Cut® Process)。智切法能使鍵合式SOI材料薄膜厚度亦具有如SIM0X優異的均勻 度。依據布魯爾於美國專利文件(U.S· Patent 5,374,564)所請求之專利範圍（Claims)描 述’該制程步驟是先於一原始基板中植入高劑量如氫、鈍氣等氣體的離子’然後與另一 目標基板鍵合成一體’接著再施以加熱處理〈heating)，使該等離子在植入層中聚合，産 生許多微氣泡（microbubbles)。隨後這些微氣泡連成一片，進而分離上下材質，産出薄膜。 由於智切法所得之薄膜均勻度十分良好，缺陷密度小，且無腐触液産生，氫氣逸出後也 無毒無害，沒有環境污染問題，且可以回收原始基板材料。但是該專利在專利範圍專案 1290342 上有些專案在技術上無法實行，致使在與Silicon Genesis公司在專利侵權宵司上敗訴 (SOITec S.A. v. Silicon Genesis Corporation, Case No. 99 CV 10826 NG). 智切法伴隨有高溫加熱處理所産生的熱應力以及低生産效率等缺失問題。因爲在智 切法的薄膜轉移技術中的升溫加熱處理，系利用各種加熱源，輸入熱能來升高基板溫 度，藉以激發該等植入之氫離子的動能，進而聚合成氣泡，終致撕裂開分離層，達到薄 膜轉移目的。 造成下列四項較爲重大的缺失： (1) 在鍵合強度未達足以抵抗氫離子在植入層聚合産生微氣泡，生成巨大剝離力之 前，溫度需控制在使氫離子産生氣泡的溫度之下（約450°C)。因此初步鍵合之 晶圓對需控制於一低溫狀態下進行退火，這將使得該退火加熱的等待時間滯 長，消耗大量時間，成爲整個薄膜轉移制程的瓶頸，影響産能(throughput); (2) 該試料需整體在高溫中加熱，需約在500°C之上，才能確保有預期之薄膜分離的 結果。假若兩鍵合材料之熱膨脹係數存在差異，易在高溫下産生一極大的熱應 力，破壞兩材料的鍵合結構；此法在轉移異材質材料過程中，往往在尙未産生 薄膜分離前，即因熱應力過大而使鍵合構造體破裂； (3) 以退火方式將熱能轉換成動能的熱效率低，須耗大量外加能量來進行，增加營 運成本； (4) 對某些材料而言，如氧化銘或氧化鋁鑭基板等等，利用智切法所揭露之制程來 進行氫離子植入以及後續的高溫加熱處理等步驟時，無法産生明顯的微細氣泡 來達到分離薄膜的目的。 在2000年臺灣的李天錫（Dr.TT.-H.Lee)發展一種非熱制程（Non-thermalProcess; 即Nova Cut ® Process)，利用高頻交替電場或磁場，例如微波（Microwave)，來直接 激發基板內部植入離子或分子離子（Molecular Ions)，産生動能，增加碰撞頻率，使微 細氣泡急劇産生且膨脹，發生植入層撕裂效應，進而將薄膜自原始基板中分離轉移至目 標基板表面（U.S. Patent 6,486,008)。這種方法能有效提高産能、降低時間成本。但是應 用此種制程在大面積晶圓片，因(1)各點産生突發性高熱點不均勻，使得試料內部各點産 生之瞬間溫度有差距，導致在各瞬間薄膜分離點的分離時間不一致’生成內部應力，造 1290342 成轉移面粗糙化，甚至産生許多的細微裂縫；（2)微波照射均勻度不易控制，伴隨産生之 溫度分佈不均勻，對制程穩定性有一定的負面影響；（3)植入之離子彼此分佈間距大，能 量吸收效率低。因此這制程被局限於小尺寸晶圓製作。 1290342 發明槪述 本發明之目的是提供一種薄膜轉移技術。這種技術能夠具備轉移大尺寸晶圓片等面 積大小、納米等級厚度、高均勻度膜厚、維持原有晶體結構的半導體材料薄膜能力。 本發明之方法是：（1)先進行一離子布植制程，將離子或分子離子植入該原始基板 表面，形成一由植入離子分隔之薄膜層，接著(2)利用晶圓鍵合法，將該原始基板與該目 標基板鍵結成一鍵合構造體，然後(3)將此鍵合構造體置於能調整溫度的高頻交替電場或 磁場裝置之中，升高該鍵合構造體至一高於室溫的使介電係數（dielectric constant)及消 散因素（dissipation factor)産生正向轉變的恒溫溫度(在本專利文獻中簡稱爲”轉變溫度 ”），在這轉變溫度（>150°C ;矽晶體材料）退火過程中，能有效轉變、增加原始基板的 微波介電係數及消散因素，大幅增進能量吸收效率；但是該溫度保持低於執行智切法所 需的溫度。（根據U.S. Patent5,374,564，約爲攝氏450度；矽晶體材料），以避免該制程的 啓動，産生上述該制程伴隨的缺陷。待溫度穩定一設定時間後，啓動高頻交替電場或磁 場，進行離子激化處理，藉由如微波(Microwave)、高周波（Radio Frequency)或電感應 耦合（Inductive Coupled)場等非熱（Non-thermal)能量場作用，産生感應能量，一部份 由植入離子直接吸收，短時間內大幅增加微氣泡成核數目，另一部分由基板有效率吸 收，$#移該能量至植入離子，增加動能，使該等植入之離子進入上述成核點，大量聚合 成爲氣體分子，塡充于該氣體分子所造成之裂縫中，進而融合形成一分離膜，分離該氣 膜以上的薄膜層並轉移至該目標基板上。 對於低介電損失値（Dielectric Loss)的氧化物之類原始基板之薄膜轉移，如 srTi〇3、ai2o3、Si02等等，本發明之方法則系利用分段式離子植入方法，先於高溫下植 入離子，藉以産生晶界間裂紋，接著再於低溫下植入離子到該裂紋中，避免植入離子大 量擴散損失，進而有效補充劑量，達到足夠離子濃度以産生微細氣泡及聚合而成分離 膜。然後將該離子植入原始基板加熱至一轉變溫度（>15〇°C)，再啓動高頻交替電場或磁 場來進行一離子激化處理，産生感應能量並轉移至該等植入離子及其聚合而成的分子 中，增加動能，使該等植入之離子聚合成氣體分子並造成裂縫’進而達成薄膜分離之目 的。如此不但有效降低所需之離子植入總劑量，而且更有節省成本'減少薄膜缺陷密度 129034之 的效果。 此外，本發明之方法可應用在薄膜的切割制程上。例如先利用一離子植入法，以於 一薄膜內形成一層或一層以上的離子分離層，接著升高該基板溫度置轉變溫度點以上， 待溫度平衡穩定後，啓動高頻交替電場或磁場照射該薄膜，使該離子分離層中的植入離 子聚合爲氣體分子，形成一分離膜，分離該薄膜，完成薄膜切割。 本發明是利用熱（thermal)及非熱（non-thermal)複合制程來進行薄膜轉移。此種 複合制程的反應過程及生産結果，皆有異於熱或非熱單一制程。以微波爲傳送能量手段 爲例，一般物質，特別是氫-矽複和體（hydrogen-silicon complex)及矽基板的微波吸收率 (即正比例於消散因素及介電係數乘績），常隨周圍溫度上升而大幅度上升。在此制程， 在未施加微波前預熱基板制轉變溫度，目的是增高原始基板的有效微波吸收率，讓之在 隨後的微波照射中能夠大量吸收，並轉移能量至內部的植入離子。而內部的植入離子也 直接吸收微波，激化而産生成核反應，生成許多微細核點，在定點有效率轉換並聚集離 子成爲分子，長大擴展成爲分離氣膜。這種熱及非熱複合制程明顯優於純熱制程或純非 熱制程。在制程時間上集産出結果的差異，更能看出。以氫離子植入八吋矽原始基板(氫 離子(H+)劑量爲8X1016/cm2，植入能量爲80KeV)，且此原始基板以與目標基板，經適當 晶圓鍵合步驟，鍵合完成一鍵合構造體爲例。首先，以純熱方式脚Smart-Cut ® Process) 轉移薄膜。加熱該鍵合構造體在450°C，需要約10分鐘，才能100%完整轉移整片薄膜層 至目標基板；其次，以純非熱制程（即Nova Cut ® Process)轉移薄膜。以1000W，2.4GHz 微波照射，約三至四分鐘，此結合體便自動分離。但是只有約30%〜65%薄膜層成功轉移 至目標基板，且有産生許多撕裂平面邊界産生；最後，以本發明之熱及非熱複合制程來 轉移薄膜，將此鍵合構造體加熱至200°C，15分鐘，然後再施加1000W，2.4GHz微波照 射。需要約1〜2分鐘，就能100%完整轉移整片薄膜層至目標基板。而在此低溫下 (200°C)，智切法（Smart-Cut ® Process)，單一熱制程，無法執行；在室溫下，Nova-Cut ® Process ,單一非熱制程也無法達到如此結果，足以證明本發明的熱及非熱複合制程有 異于單一熱或非熱制程。 以在執行溫度上差異造成之制程上差異，而被認證爲新技術亦在這類制程專利出 現。如前述智切法專利（U.S. Patent 5,374,560)，因在離子植入時溫度上之差異 1290342 (250°C)，造成制程反應之差異，也産出新專利（U.S. Patents 5,877,070 & 6,150,239)。 【發明內容】 本發明之目的是提供一種薄膜轉移技術。這種技術能夠具備轉移大尺寸晶圓片等面 積大小、納米等級厚度、高均勻度膜厚、維持原有晶體結構的半導體材料薄膜能力。 本發明之方法是：（1)先進行一離子布植制程，將離子或分子離子植入該原始基板 表面，形成一由植入離子分隔之薄膜層，接著(2)利用晶圓鍵合法，將該原始基板與該目 標基板鍵結成一鍵合構造體，然後(3)將此鍵合構造體置於能調整溫度的高頻交替電場或 磁場裝置之中，升高該鍵合構造體至一高於室溫的使介電係數（dielectric constant)及消 散因素（dissipation factor)産生正向轉變的恒溫溫度(在本專利文獻中簡稱爲”轉變溫度 ")，在這轉變溫度（>150°C ;矽晶體材料）退火過程中，能有效轉變、增加原始基板的 微波介電係數及消散因素，大幅增進能量吸收效率；但是該溫度保持低於執行智切法所、 需的溫度。（根據U.S. Patent 5,374,564，約爲攝氏450度；矽晶體材料），以避免該制程的 啓動，産生上述該制程伴隨的缺陷。待溫度穩定一設定時間後，啓動高頻交替電場或磁 場，進行離子激化處理，藉由如微波(Microwave)、高周波（Radio Frequency)或電感應 親合（Inductive Coupled)場等非熱（Non-thermal)能量場作用，産生感應能量，一部份 由植入離子直接吸收，短時間內大幅增加微氣泡成核數目，另一部分由基板有效率吸 收，轉移該能量至植入離子，增加動能，使該等植入之離子進入上述成核點，大量聚合 成爲氣體分子，塡充于該氣體分子所造成之裂縫中，進而融合形成一分離膜，分離該氣 膜以上的薄膜層並轉移至該目標基板上。 對於低介電損失値（Dielectric Loss)的氧化物之類原始基板之薄膜轉移，如 SrTi〇3、ai2o3、Si02等等，本發明之方法則系利用分段式離子植入方法，先於高溫下植 入離子，藉以産生晶界間裂紋，接著再於低溫下植入離子到該裂紋中，避免植入離子大 量擴散損失，進而有效補充劑量，達到足夠離子濃度以産生微細氣泡及聚合而成分離 膜。然後將該離子植入原始基板加熱至一轉變溫度（>150°C)，再啓動高頻交替電場或磁 場來進行一離子激化處理，産生感應能量並轉移至該等植入離子及其聚合而成的分子 10 1290342 中，增加動能，使該等植入之離子聚合成氣體分子並造成裂縫，進而達成薄膜分離之目 的。如此不但有效降低所需之離子植入總劑量，而且更有節省成本、減少薄膜缺陷密度 的效果。 此外，本發明之方法可應用在薄膜的切割制程上。例如先利用一離子植入法，以於 一薄膜內形成一層或一層以上的離子分離層，接著升高該基板溫度置轉變溫度點以上， 待溫度平衡穩定後，啓動高頻交替電場或磁場照射該薄膜，使該離子分離層中的植入離 子聚合爲氣體分子，形成一分離膜，分離該薄膜，完成薄膜切割。 本發明是利用熱（thermal)及非熱（non-thermal)複合制程來進行薄膜轉移。此種 複合制程的反應過程及生産結果，皆有異於熱或非熱單一制程。以微波爲傳送能量手段 爲例，一般物質，特別是氧-砂複和體（hydrogen-silicon complex)及砂基板的微波吸收率 (即正比例於消散因素及介電係數乘績），常隨周圍溫度上升而大幅度上升。在此制程， 在未施加微波前預熱基板制轉變溫度，目的是增高原始基板的有效微波吸收率，讓之在 隨後的微波照射中能夠大量吸收，並轉移能量至內部的植入離子。而內部的植入離子也 直接吸收微波，激化而産生成核反應，生成許多微細核點，在定點有效率轉換並聚集離 子成爲分子，長大擴展成爲分離氣膜。這種熱及非熱複合制程明顯優於純熱制程或純非 熱制程。在制程時間上集産出結果的差異，更能看出。以氫離子植入八吋矽原始基板(氫 離子(H+)劑量爲8X1016/cm2，植入能量爲80KeV)，且此原始基板以與目標基板，經適當 晶圓鍵合步驟，鍵合完成一鍵合構造體爲例。首先，以純熱方式（gpSmart-Cut ® Process) 轉移薄膜。加熱該鍵合構造體在45(^(3，需要約10分鐘，才能100%完整轉移整片薄膜層 至目標基板；其次，以純非熱制程（S卩Nova Cut® Process)轉移薄膜。以1000W，2.4GHz 微波照射，約三至四分鐘，此結合體便自動分離。但是只有約30%〜65%薄膜層成功轉移 至目標基板，且有産生許多撕裂平面邊界産生；最後，以本發明之熱及非熱複合制程來 轉移薄膜，將此鍵合構造體加熱至200°C，15分鐘，然後再施加1000W，2.4GHz微波照 射。需要約1〜2分鐘，就能100%完整轉移整片薄膜層至目標基板。而在此低溫下 (200°C)，智切法（Smart-Cut ® Process)，單一熱制程，無法執行；在室溫下，Nova-Cut ® Process ’單一非熱制程也無法達到如此結果，足以證明本發明的熱及非熱複合制程有 異于單一熱或非熱制程。 1290342 以在執行溫度上差異造成之制程上差異，而被認證爲新技術亦在這類制程專利出 現。如前述智切法專利（U.s. Patent 5,374,560)，因在離子植入時溫度上之差異 (250°C)，造成制程反應之差異，也産出新專利（U.S. Patents 5,877,070 & 6,150,239)。1290342 玖, the invention description: [Technical Field] The present invention describes a thin film transfer technique of a semiconductor material, in particular, transferring a film with an area equal to the original substrate, a nanometer-thickness, a high film thickness uniformity, and a low defect density. technology. [Prior Art] Wafer Bonding Technology combines two single crystal wafers with very different lattice constants. The middle bonding interface does not require any glue and remains completely clean, but still can be obtained. The bonding strength of the same strength as the substrate meets the stringent requirements of the interface properties of electronic and optoelectronic materials. In 1988, Dr. W. Maszara of the United States applied a P+ type of EtchStop Layer to fabricate sub-micron-thick bonded insulating sand wafers (Bonding Etch-Back Silicon on). Insulator; BESOI) extends the range of applications for this technology (BESOI) to the fields of electronic materials, optoelectronic materials and microelectromechanical systems (MEMS). However, this technology still has the disadvantage that the corrosion stop layer has different working time at each point, which affects the film thickness uniformity (TTV), and becomes the biggest obstacle for the material to be applied to the high-level integrated circuit. In addition, the process is very time consuming, not only wastes the original substrate, but also the waste solution generated by it is also liable to cause environmental pollution problems, resulting in high production costs. During the same period, IBM's method of making SOI materials using Separation by Implantation Oxygen (SIM0X) was also rapidly developed. Due to the excellent film thickness uniformity of SIM0X, the application of BES0 inlay in the field of making highly integrated circuits is almost eliminated. In 1992, Dr. M. Brnel of France invented a film transfer technology called the Smart Cut® Process. The wisdom cutting method enables the thickness of the bonded SOI material film to have excellent uniformity as SIM0X. According to the patent scope (Claims) requested by Brewer in U.S. Patent No. 5,374,564, the process step is to implant a high dose of ions such as hydrogen, gas, etc. in an original substrate and then Another target substrate is integrated into a 'subsequent' heat treatment to cause the plasma to polymerize in the implant layer, resulting in a plurality of microbubbles. These microbubbles are then joined together to separate the upper and lower materials to produce a film. Since the film uniformity obtained by the wisdom cutting method is very good, the defect density is small, and no corrosion of the liquid is generated, the hydrogen gas is non-toxic and harmless after being escaped, there is no environmental pollution problem, and the original substrate material can be recovered. However, the patent was not technically feasible in the patent scope project 1290342, resulting in a loss of patent infringement with Silicon Genesis (SOITec SA v. Silicon Genesis Corporation, Case No. 99 CV 10826 NG). The method is accompanied by the lack of thermal stress generated by high-temperature heat treatment and low production efficiency. Because the heating process in the thin film transfer technology of the wisdom cutting method uses various heating sources to input thermal energy to raise the substrate temperature, thereby exciting the kinetic energy of the implanted hydrogen ions, thereby polymerizing into bubbles, and finally tearing. The separation layer is opened to achieve the purpose of film transfer. The following four major defects are caused: (1) Before the bonding strength is insufficient to resist the hydrogen ions in the implant layer to generate microbubbles and generate a large peeling force, the temperature is controlled at a temperature at which the hydrogen ions generate bubbles. Lower (about 450 ° C). Therefore, the initially bonded wafer is controlled to be annealed at a low temperature, which will make the waiting time of the annealing heating lag and consume a large amount of time, which becomes a bottleneck of the entire film transfer process and affects the throughput; The sample needs to be heated at a high temperature as a whole, and needs to be above about 500 ° C to ensure the expected separation of the film. If there is a difference in the thermal expansion coefficient of the two-bonded material, it is easy to generate a great thermal stress at high temperature, which destroys the bonding structure of the two materials; in the process of transferring the different material materials, the method is often used before the film separation occurs. The bond structure is broken due to excessive thermal stress; (3) The thermal efficiency of converting thermal energy into kinetic energy by annealing is low, and it takes a lot of additional energy to increase the operating cost; (4) For some materials, such as Oxidation or alumina crucible substrates, etc., using the process disclosed by the wisdom cutting method for hydrogen ion implantation and subsequent high-temperature heat treatment, etc., can not produce significant micro-bubbles to achieve the purpose of separating the film. In 2000, Dr. TT.-H. Lee of Taiwan developed a non-thermal process (Nova-Cut Process), which uses a high-frequency alternating electric field or a magnetic field, such as microwave (Microwave), to directly excite Implantation of ions or molecular ions (Molecular Ions) inside the substrate generates kinetic energy, increases the collision frequency, causes the microbubbles to rapidly generate and expand, and causes the tearing effect of the implant layer, thereby separating and transferring the film from the original substrate to the surface of the target substrate ( US Patent 6,486,008). This method can effectively increase productivity and reduce time costs. However, when such a process is applied to a large-area wafer, (1) a sudden high hot spot is uneven at each point, which causes a difference in the instantaneous temperature generated at each point inside the sample, resulting in inconsistent separation time of the film separation point at each instant. 'Generating internal stress, making 1290342 into a roughening of the transfer surface, and even producing many fine cracks; (2) Uniformity of microwave irradiation is difficult to control, and the temperature distribution accompanying it is uneven, which has a certain negative impact on process stability; The implanted ions are distributed at a large distance from each other, and the energy absorption efficiency is low. Therefore, this process is limited to small-size wafer fabrication. 1290342 SUMMARY OF THE INVENTION It is an object of the present invention to provide a film transfer technique. This technology has the ability to transfer a large-size wafer, such as a wafer size, a nano-scale thickness, a high uniformity film thickness, and a semiconductor material film that maintains the original crystal structure. The method of the present invention is: (1) first performing an ion implantation process, implanting ions or molecular ions on the surface of the original substrate to form a thin film layer separated by implanted ions, and then (2) using wafer bonding, Bonding the original substrate to the target substrate to form a bonding structure, and then (3) placing the bonding structure in a high-frequency alternating electric field or magnetic field device capable of adjusting temperature, and raising the bonding structure to A thermostatic temperature (referred to as "transition temperature" in this patent document) that causes a forward transition (dielectric constant) and a dissipation factor to be higher than room temperature, at which the transition temperature (> 150 °C; 矽 crystal material) During the annealing process, the microwave dielectric constant and dissipation factor of the original substrate can be effectively converted and increased, and the energy absorption efficiency is greatly improved; however, the temperature is kept lower than the temperature required for performing the wisdom cutting method. (According to U.S. Patent 5,374,564, approximately 450 degrees Celsius; 矽 crystal material) to avoid the initiation of the process, resulting in the aforementioned drawbacks associated with the process. After the temperature is stabilized for a set period, a high-frequency alternating electric field or magnetic field is activated to perform ionization treatment, such as non-thermal (Non-thermal) such as microwave (wave), high frequency (Radio Frequency) or inductive Coupled (Inductive Coupled) field. The energy field acts to generate the inductive energy, which is directly absorbed by the implanted ions, which greatly increases the number of microbubble nucleation in a short time, and the other part is efficiently absorbed by the substrate, and the energy is transferred to the implanted ions to increase the kinetic energy. The implanted ions enter the nucleation site, are polymerized in a large amount into gas molecules, are filled in the cracks caused by the gas molecules, and then fused to form a separation membrane, and the membrane layer above the gas membrane is separated and transferred to On the target substrate. For thin film transfer of original substrates such as oxides of low dielectric loss, such as srTi〇3, ai2o3, SiO2, etc., the method of the present invention utilizes a segmented ion implantation method prior to high temperature. The ions are implanted underneath to generate intergranular cracks, and then ions are implanted into the cracks at a low temperature to avoid a large amount of diffusion loss of the implanted ions, thereby effectively replenishing the dose to achieve sufficient ion concentration to generate fine bubbles and polymerization. Separation membrane. The ions are then implanted into the original substrate to a transition temperature (> 15 ° C), and then a high frequency alternating electric field or magnetic field is activated to perform an ionization process to generate inductive energy and transfer to the implanted ions and In the polymerized molecule, kinetic energy is increased, and the implanted ions are polymerized into gas molecules and cause cracks, thereby achieving the purpose of film separation. This not only effectively reduces the total ion implantation dose required, but also saves the cost of reducing the film defect density 129034. Further, the method of the present invention can be applied to a cutting process of a film. For example, an ion implantation method is first used to form one or more ion separation layers in a film, and then the substrate temperature is raised above a temperature transition point. After the temperature balance is stabilized, a high frequency alternating electric field or magnetic field irradiation is started. The film polymerizes the implanted ions in the ion separation layer into gas molecules to form a separation membrane, and separates the film to complete the film cutting. The present invention utilizes thermal and non-thermal composite processes for film transfer. The reaction process and production results of this composite process are different from the single process of heat or non-heat. Taking microwave as the means of transmitting energy, for example, the microwave absorption rate of a general substance, especially a hydrogen-silicon complex and a germanium substrate (that is, proportional to the dissipation factor and the dielectric coefficient), often follows the surroundings. The temperature rises and rises sharply. In this process, the substrate transition temperature is preheated before the microwave is applied, in order to increase the effective microwave absorption of the original substrate, allowing it to be absorbed in a large amount in subsequent microwave irradiation, and transferring energy to the internal implanted ions. The internal implanted ions also directly absorb the microwaves, intensifying and generating a nucleation reaction, generating a plurality of fine nuclear dots, efficiently converting at a fixed point and collecting the ions into molecules, and expanding into a separation gas film. This thermal and non-thermal composite process is significantly better than a pure hot process or a pure non-thermal process. The difference in output results in the process time is more visible. The original substrate (the hydrogen ion (H+) dose is 8×10 16 /cm 2 and the implantation energy is 80 KeV) is implanted with hydrogen ions, and the original substrate is bonded to the target substrate through a suitable wafer bonding step. The bonded structure is taken as an example. First, transfer the film in a pure thermal foot (Smart-Cut ® Process). Heating the bonded structure at 450 ° C takes about 10 minutes to completely transfer the entire film layer to the target substrate 100%; secondly, transfer the film in a pure non-thermal process (ie Nova Cut ® Process). The combination is automatically separated by 1000 W, 2.4 GHz microwave irradiation for about three to four minutes. However, only about 30% to 65% of the film layer is successfully transferred to the target substrate, and many tear plane boundaries are generated. Finally, the film is transferred by the thermal and non-thermal composite process of the present invention, and the bonded structure is heated to 200 ° C, 15 minutes, then apply 1000W, 2.4GHz microwave irradiation. It takes about 1 to 2 minutes to completely transfer the entire film layer to the target substrate 100%. At this low temperature (200 ° C), Smart-Cut ® Process, a single hot process, can not be performed; at room temperature, Nova-Cut ® Process, a single non-thermal process can not achieve this result, It is sufficient to demonstrate that the thermal and non-thermal composite processes of the present invention differ from a single thermal or non-thermal process. In the case of differences in process temperatures caused by differences in execution temperatures, certifications for new technologies are also found in such process patents. As described in the aforementioned patented method (U.S. Patent 5, 374, 560), the difference in process temperature due to the difference in temperature at the time of ion implantation is 1290342 (250 ° C), and a new patent is also produced (U.S. Patent 5,877,070 & 6,150,239). SUMMARY OF THE INVENTION It is an object of the present invention to provide a film transfer technique. This technology has the ability to transfer a large-size wafer, such as a wafer size, a nano-scale thickness, a high uniformity film thickness, and a semiconductor material film that maintains the original crystal structure. The method of the present invention is: (1) first performing an ion implantation process, implanting ions or molecular ions on the surface of the original substrate to form a thin film layer separated by implanted ions, and then (2) using wafer bonding, Bonding the original substrate to the target substrate to form a bonding structure, and then (3) placing the bonding structure in a high-frequency alternating electric field or magnetic field device capable of adjusting temperature, and raising the bonding structure to A thermostatic temperature (referred to as "transition temperature" in this patent document) that causes a forward transition (dielectric constant) and a dissipation factor above room temperature, at which the transition temperature (> 150 ° C; 矽 crystal material) during the annealing process, can effectively transform, increase the microwave dielectric coefficient and dissipation factor of the original substrate, greatly improve the energy absorption efficiency; but the temperature is kept below the temperature required to perform the wisdom cutting method. (According to US Patent 5,374,564, approximately 450 degrees Celsius; 矽 crystal material) to avoid the start of the process, resulting in the defects associated with the above process. After the temperature is stable for a set time, start The alternating electric field or magnetic field is subjected to ionization treatment to generate induced energy by a non-thermal energy field such as a microwave, a radio frequency, or an inductive coupled field. A part is directly absorbed by the implanted ions, which greatly increases the number of microbubble nucleation in a short time, and the other part is efficiently absorbed by the substrate, transferring the energy to the implanted ions, increasing the kinetic energy, and allowing the implanted ions to enter the above-mentioned formation. The core is polymerized in a large amount into a gas molecule, which is filled in the crack caused by the gas molecule, and then fused to form a separation membrane, and the thin film layer above the gas film is separated and transferred to the target substrate. For low dielectric loss値(Dielectric Loss) film transfer of the original substrate such as oxide, such as SrTi〇3, ai2o3, SiO2, etc., the method of the present invention uses a segmented ion implantation method to implant ions prior to high temperature. Cracks between the intergranular boundaries are generated, and then ions are implanted into the cracks at a low temperature to avoid a large amount of diffusion loss of the implanted ions, thereby effectively replenishing the dose. The ion concentration is sufficient to generate fine bubbles and polymerize to form a separation membrane. The ions are then implanted into the original substrate to a transition temperature (>150 ° C), and then a high-frequency alternating electric field or magnetic field is activated to perform an ionization treatment. Inductive energy is generated and transferred to the implanted ions and their polymerized molecules 10 1290342, which increases the kinetic energy, causes the implanted ions to polymerize into gas molecules and cause cracks, thereby achieving the purpose of film separation. The total ion implantation dose required is reduced, and the effect of saving cost and reducing the defect density of the film is further improved. Further, the method of the present invention can be applied to a film cutting process. For example, an ion implantation method is first used to form one or more ion separation layers in a film, and then the substrate temperature is raised above a temperature transition point. After the temperature balance is stabilized, a high frequency alternating electric field or magnetic field irradiation is started. The film polymerizes the implanted ions in the ion separation layer into gas molecules to form a separation membrane, and separates the film to complete the film cutting. The present invention utilizes thermal and non-thermal composite processes for film transfer. The reaction process and production results of this composite process are different from the single process of heat or non-heat. Taking microwave as a means of transmitting energy, for example, the microwave absorption rate of a general substance, especially a hydrogen-silicon complex and a sand substrate (that is, proportional to the dissipation factor and the dielectric coefficient), often follows the surroundings. The temperature rises and rises sharply. In this process, the substrate transition temperature is preheated before the microwave is applied, in order to increase the effective microwave absorption of the original substrate, allowing it to be absorbed in a large amount in subsequent microwave irradiation, and transferring energy to the internal implanted ions. The internal implanted ions also directly absorb the microwaves, intensifying and generating a nucleation reaction, generating a plurality of fine nuclear dots, efficiently converting at a fixed point and collecting the ions into molecules, and expanding into a separation gas film. This thermal and non-thermal composite process is significantly better than a pure hot process or a pure non-thermal process. The difference in output results in the process time is more visible. The original substrate (the hydrogen ion (H+) dose is 8×10 16 /cm 2 and the implantation energy is 80 KeV) is implanted with hydrogen ions, and the original substrate is bonded to the target substrate through a suitable wafer bonding step. The bonded structure is taken as an example. First, transfer the film in pure heat (gpSmart-Cut ® Process). Heating the bonded structure at 45 (^ (3, it takes about 10 minutes to completely transfer the entire film layer to the target substrate 100%; secondly, transfer the film in a pure non-thermal process (S卩Nova Cut® Process). 1000 W , 2.4GHz microwave irradiation, about three to four minutes, the combination is automatically separated. However, only about 30% ~ 65% of the film layer is successfully transferred to the target substrate, and there are many tear plane boundaries generated; finally, with the present invention The thermal and non-thermal composite process is used to transfer the film, and the bonded structure is heated to 200 ° C for 15 minutes, and then 1000 W, 2.4 GHz microwave irradiation is applied. It takes about 1 to 2 minutes to completely transfer 100%. Film layer to the target substrate. At this low temperature (200 ° C), Smart-Cut ® Process, single thermal process, can not be performed; at room temperature, Nova-Cut ® Process 'single non-heat The process also fails to achieve such results, which is sufficient to demonstrate that the thermal and non-thermal composite processes of the present invention differ from a single thermal or non-thermal process. 1290342 is also certified as a new technology due to differences in process temperatures due to differences in temperature performance. Class process patent As the cutting method Chilean Patent (U.s. Patent 5,374,560), due to the difference (250 ° C) temperature on the ion implantation, resulting in the difference of the reaction process, but also output new patents (U.S. Patents 5,877,070 & 6,150,239).
12 1290342 【實施方式】 請參閱圖一至圖五，圖一至圖五爲本發明之薄膜轉移方法的制程示意圖。本發明是 提供一種將薄膜02自原始基板01中分離，並轉移至一目標基板07上的方法。 如圖一所示，本發明是先利用一離子植入(Ion Implantation)法，將離子或分子離子 06對著一原始基板01的正表面05植入，形成一植入離子分離層03。植入離子分離層03將 原始基板01上、下分隔爲兩區：一爲含有植入離子或分子離子06的植入區域，此爲薄膜 層02 ; —爲不含植入離子或分子離子06的區域，其定義爲餘質層(Remnant Substrate) 02。 由於薄膜層02植入深度系由離子植入能量決定，因此吾人能精確地控制原始基板〇1的擬 轉移之薄膜層02的厚度。其中該離子植入法可爲一以電漿浸泡離子植入法(Plasma i〇n Implantation Immersion)或以相異植入溫度的分段植入離子法，而該離子植入法中所植入 之離子包含有氫的離子或者是分子離子(Molecular Ions)。 進行該離子植入法之目的是爲了將大量離子或分子離子06植入原始基板01的表 層，藉以離子産生撞擊，撞開原有存在於原始基板01晶體結構中的原子，打斷該原子與 其鄰近原子間的鍵結’甚至取代原有的原子與其他鄰近原子形成新的微弱鍵··氫-矽複 合結構。植入離子分離層03中的植入離子或分子離子〇6在原始基板〇1內系處於一不穩定 狀態，其餘過多植入劑量的離子或一些未因撞擊而分裂成爲單原子的被植入分子離子 06，亦嵌入晶格空隙中，産生體積應變，致使植入離子分離層03變成一應力集中區。而 且植入有離子之晶界間的凝聚力也相對的較低，更造成原始基板01在植入離子分離層〇3 附近之處的機械性質脆弱，如同氫脆現象（Hydrogen Embrittlement)。 接著如圖二所示，利用晶圓鍵合法（Wafer Bonding Technology)，並配合一適當的 表面電漿處理，使原始基板01與目標基板07的鍵合面能夠獲致足夠的鍵合強度（Bonding Strength)，以將原始基板〇1與目標基板07相接合成一鍵合結構體1〇(B〇nded structure)。 其中該晶圓鍵合法可爲一直接鍵合法（Direct Bonding)、陽極鍵合法（Anodic Bonding)、 低溫鍵合法（Low Temperature Bonding)、真空鍵合法（Vacuum Bonding)或電漿強化鍵合 法（Plasma Enhanced Bonding) 〇 13 1290342 如圖三所示，此薄膜分離效應重點在植入離子分離層03的吸收能量能力，故在未啓 動非熱量，如微波，照射時，先將鍵合結構體10的溫度升溫至轉變溫度，能夠增高植入 離子分離層〇3的微波吸收效率(或介電係數及消散因素乘積），同時也增高原始基板01對 微波之吸收，以利轉移能量至植入離子分離層03，造成大面積且均勻有效率的薄膜轉 移。在此增加介電係數及消散因素步驟中，使原始基板01與目標基板04的鍵合構造體10 適當地保持在一小於40(TC的溫度狀態之下，以防止執行智切法，避免該法之副作用所 導致的巨大熱應力，進而擴大本發明之薄膜轉移方法的應用範圍。 如圖四所示，隨後將在穩定轉變溫度下的原始基板01與目標基板07的鍵合結構體 10，施以一高頻交替電場或磁場照射08處理。由於植入的離子、分子離子〇6或經撞擊後 分裂産生的離子，會與原始基板01原子産生微弱鍵結生成的原子鍵結對，因具有陰電性 差，産生電耦極，故能對高頻交替電場或磁場照射08感應，進而使得植入離子分離層〇3 附近之原子的震蕩頻率劇烈增快，終致斷鍵脫離，其並可與由其他處分裂出來的相同的 原子相結合’再度形成氣體分子，在該處形成充滿氣體分子的核種。以這些核種爲基地， 捕捉在晶格間遊移的原子，聚合成氣泡。 如圖五所示，原始基板01經由介電係數及消散因素增加，有效使攙雜原子所産生之 載子(電子或電洞)在高頻交替電場或磁場中感應成伴隨電流，快速流動，而産生大量的 熱能’以非彈性碰撞方式，直接轉移該熱量至周圍環繞的植入離子氣體分子，快速提升 該氣體分子動能，將原有氣泡造成之體積應變急劇加大。此效應將使在植入離子分離層 03中的由前述産生之氣泡所引起的裂縫，受到由體積應變快速增大而來的拉伸應力，沿 著斷裂尖端’急速延伸擴大，倂吞鄰近氣泡，産生撕裂效應，將薄膜層02自原始基板01 中與餘質層04分離，$專移至目標基板〇7上。 14 1290342 由於高頻交替電場或磁場裝置所形成之離子激化效應可使植入離子與承受植入離 子原始基板原子間的鍵結産生電耦極化效應，進而加速斷鍵形成裂縫，並使該等植入離 子急劇聚合成氣體分子。而植入之離子或分子離子，在離子分離層所聚合成的分子及其 造成之晶界裂縫介面，於基板內之作用宛如活性種（Activated Species)，吸引這些帶著 能量、快速流動的載子，發生集膚效應（Skin Effect)效果，在該層集中流動，使得該感 應能，得以藉由載子與離子分離層中的分子作非彈性碰撞，直接轉換至該分子，增加其· 動能。但是由於這種動能傳輸往往瞬間集中在某點，使得瞬間高溫點産生，進而影響整 體制程溫度分佈均勻度，帶來負面的智切法效應：某點面積因集膚效應在瞬間已有薄膜 轉移現象，但是在其他點卻未有轉移現象，造成轉移薄膜破碎。 本發明根據學術界在微波傳導吸收上的文獻報告，得知一般物質微波吸收量與介電 係數（dielectric constant)與消散因素（dissipation factor)乘積成正比例關係。而介電係 數及消散因素在低溫加熱時，常隨溫度上升而變化，特別是物質在可移動態與不可移動 態的差距，呈現跳躍方式轉變。例如冰與水在攝氏零度時的介電係數^及消散因素 tan3，即由sr = 4; tan3 = 0.0009 跳躍到 εΓ = 81; tan5 = 0.15700，呈現3,532倍的增加轉 變。氫原子在砂晶體中亦有類似現象：在約攝氏150度以下時爲不可移動態，而在約攝 氏150度以上時爲可移動態。根據此原理，本發明在啓動微波照射氫離子植入原始基板 前，先加熱至轉變溫度(約攝氏150度似上，使植入之氫離子與原始基板的微波吸收效率 大幅增加（控制溫度在高於攝氏150度，低於攝氏400度之間），不啓動智切法，但能妥善 控制微波制程穩定性。 以H+植入矽基板用8xl016/cm2劑量，80KeV植入能量爲例，就植入氫原子體積密度 與砂原子體積密度比例言，約爲1:50。故若矽原子能夠有效吸收微波能量並轉讓氫原 子，將十分有助於大尺寸面積轉移。除此之外，本發明並能在植入劑量爲臨界植入劑量 (Critical Dosage)時，有效執行薄膜分離制程，大量節省植入成本。例如使用Nova Cut Process®，臨界植入劑量約爲5.5X1016/cm2，而且在低於此植入臨界劑量的條件下，無 論微波照射時間多長，不能看出薄膜轉移現象。而在SmartCutProcess®中，臨界植入 劑量約爲4X1016，且在此劑量執行薄膜分離制程所需要之時間溫度，皆遠大于正常執行 之時間溫度。但在本發明中，在臨界植入劑量約爲3.5X1016〜5X1016的樣品中，仍能夠 正常執行薄膜分離制程。 15 129034212 1290342 [Embodiment] Please refer to FIG. 1 to FIG. 5 , and FIG. 1 to FIG. 5 are schematic diagrams showing the process of the film transfer method of the present invention. The present invention provides a method of separating the film 02 from the original substrate 01 and transferring it to a target substrate 07. As shown in Fig. 1, the present invention first implants an ion or molecular ion 06 against a front surface 05 of an original substrate 01 by an Ion Implantation method to form an implanted ion separation layer 03. Implanting the ion separation layer 03 separates the original substrate 01 into two regions: one is an implanted region containing implanted ions or molecular ions 06, which is a thin film layer 02; - is free of implanted ions or molecular ions 06 The area, which is defined as the Remnant Substrate 02. Since the depth of implantation of the film layer 02 is determined by the ion implantation energy, it is possible to precisely control the thickness of the film layer 02 to be transferred of the original substrate 〇1. The ion implantation method may be a plasma ion implantation ion implantation method (Plasma i〇n Implantation Immersion) or a segment implantation ion method at a different implantation temperature, and the ion implantation method is implanted in the ion implantation method. The ions contain ions of hydrogen or molecular ions (Molecular Ions). The purpose of the ion implantation method is to implant a large amount of ions or molecular ions 06 into the surface layer of the original substrate 01, whereby ions collide and break the atoms existing in the crystal structure of the original substrate 01, interrupting the atoms and their neighbors. The bond between atoms 'even replaces the original atom with other neighboring atoms to form a new weak bond · hydrogen-矽 composite structure. The implanted ions or molecular ions 植入6 implanted in the ion separation layer 03 are in an unstable state in the original substrate 〇1, and the remaining excessively implanted ions or some are not implanted into single atoms by impact. The molecular ion 06 is also embedded in the lattice gap, causing a volume strain, causing the implanted ion separation layer 03 to become a stress concentration region. Moreover, the cohesive force between the grain boundaries implanted with ions is relatively low, and the mechanical properties of the original substrate 01 near the ion separation layer 〇3 are weak, like the hydrogen embrittlement phenomenon. Then, as shown in FIG. 2, using Wafer Bonding Technology and a suitable surface plasma treatment, the bonding surface of the original substrate 01 and the target substrate 07 can be obtained with sufficient bonding strength (Bonding Strength). ), the original substrate 〇 1 and the target substrate 07 are joined to form a bonded structure 1 〇 ed 。 structure. The wafer bonding method may be Direct Bonding, Anodic Bonding, Low Temperature Bonding, Vacuum Bonding or Plasma Enhanced (Plasma Enhanced). Bonding) 〇13 1290342 As shown in Fig. 3, the film separation effect focuses on the energy absorbing ability of the ion separation layer 03, so that the temperature of the bonded structure 10 is first set when the non-heat, such as microwave, is not activated. Heating to the transition temperature can increase the microwave absorption efficiency (or the product of dielectric constant and dissipation factor) of the implanted ion separation layer ,3, and also increase the absorption of the microwave by the original substrate 01, so as to transfer energy to the implanted ion separation layer. 03, resulting in a large area and uniform and efficient film transfer. In the step of increasing the dielectric constant and the dissipating factor, the bonding structure 10 of the original substrate 01 and the target substrate 04 is appropriately maintained at a temperature lower than 40 (TC) to prevent the wisdom cutting method from being performed. The large thermal stress caused by the side effect of the method further expands the application range of the film transfer method of the present invention. As shown in FIG. 4, the bonded structure 10 of the original substrate 01 and the target substrate 07 at a stable transition temperature is subsequently Applying a high-frequency alternating electric field or magnetic field irradiation to 08. Since the implanted ions, molecular ions 〇6 or ions generated by the splitting after impact, the atomic bond pairs generated by the weak bond of the original substrate 01 atoms are obtained. Poor electro-opticality, resulting in an electric coupling pole, so it can induce 08 high-frequency alternating electric field or magnetic field irradiation, so that the oscillation frequency of the atom implanted near the ion separation layer 〇3 is sharply increased, and the broken bond is finally detached. In combination with the same atoms split from other parts, 'gas molecules are formed again, where nuclear species filled with gas molecules are formed. Based on these nuclear species, trapped in the crystal lattice The atoms moving between them are aggregated into bubbles. As shown in Fig. 5, the original substrate 01 is increased by the dielectric constant and the dissipation factor, so that the carriers (electrons or holes) generated by the doping atoms are effectively exchanged in a high-frequency alternating electric field or a magnetic field. Inductively accommodating current, rapid flow, and generating a large amount of heat energy. In the non-elastic collision mode, directly transferring the heat to the surrounding implanted ion gas molecules, rapidly increasing the kinetic energy of the gas molecule, causing the volumetric strain caused by the original bubble to be sharp This effect will cause the crack caused by the bubble generated in the ion separation layer 03 to be subjected to the tensile stress rapidly increasing from the volume strain, and rapidly expand and expand along the fracture tip. The adjacent layer of bubbles is swollen to produce a tearing effect, and the film layer 02 is separated from the remaining layer 04 from the original substrate 01, and is exclusively transferred to the target substrate 〇 7. 14 1290342 Ionization due to high frequency alternating electric field or magnetic field device The effect can cause an electrocoupled polarization effect between the implanted ions and the bond between the atoms that are implanted with the original ions of the implanted ions, thereby accelerating the crack formation and causing the cracks. The implanted ions are rapidly polymerized into gas molecules, and the implanted ions or molecular ions, which are polymerized in the ion separation layer and the interfacial crack interface formed by them, function in the substrate like Activated Species, attracting These energetic, fast-flowing carriers have a skin effect effect, and the concentrated flow in the layer enables the inductive energy to be indirectly collided with the molecules in the ion separation layer by the carrier. Switching to the molecule increases its kinetic energy. However, since this kinetic energy transmission tends to be concentrated at a certain point in an instant, the instantaneous high temperature point is generated, which in turn affects the uniformity of the overall process temperature distribution, resulting in a negative wisdom cut effect: a certain area The film transfer phenomenon occurs in an instant due to the skin effect, but there is no transfer phenomenon at other points, causing the transfer film to be broken. According to the literature report of the microwave conduction absorption in the academic field, the microwave absorption amount of the general substance is known. The electric constant is proportional to the product of the dissipation factor. When the dielectric constant and the dissipation factor are heated at low temperature, they often change with the temperature rise, especially the gap between the movable state and the immobile state, which shows a transition mode. For example, the dielectric constant of ice and water at zero degrees Celsius and the dissipation factor tan3, that is, sr = 4; tan3 = 0.0009 jumps to εΓ = 81; tan5 = 0.15700, which shows an increase of 3,532 times. Hydrogen atoms have a similar phenomenon in sand crystals: they are immovable when they are below about 150 degrees Celsius, and are movable when they are above about 150 degrees Celsius. According to this principle, the present invention heats the transition temperature to about 150 degrees Celsius before the microwave irradiation of hydrogen ions is implanted into the original substrate, so that the microwave absorption efficiency of the implanted hydrogen ions and the original substrate is greatly increased (the temperature is controlled at Above 150 degrees Celsius, less than 400 degrees Celsius), the wisdom cutting method is not activated, but the microwave process stability can be properly controlled. The H+ implanted 矽 substrate is implanted with 8xl016/cm2 and 80KeV energy. The ratio of the bulk density of the implanted hydrogen atom to the bulk density of the sand atom is about 1:50. Therefore, if the helium atom can effectively absorb the microwave energy and transfer the hydrogen atom, it will greatly facilitate the transfer of large-sized areas. The invention can effectively perform the membrane separation process when the implantation dose is a critical dosage, which greatly saves the implantation cost. For example, using the Nova Cut Process®, the critical implantation dose is about 5.5×10 16 /cm 2 , and Below this critical dose of implantation, no matter how long the microwave irradiation time is, the film transfer phenomenon cannot be seen. In SmartCutProcess®, the critical implant dose is about 4×1016, and The time and temperature required for performing the film separation process at this dose is much greater than the time temperature for normal execution. However, in the present invention, the film separation process can still be normally performed in the sample having a critical implantation dose of about 3.5×10 16 to 5×1016. 15 1290342
這種利用在轉變溫度上以高頻交替電場或磁場來激發分子動能的方法，可以有效地 大幅改進加熱點瞬間薄膜分離溫度不均勻的重大缺失。因此本發明即利用這種在轉變溫 度上，施以高頻交替電場或磁場來激發分子動能的方法配合晶圓鍵合技術及離子植入制 程，由一大尺寸基板切下等面積、厚薄均勻、低缺陷密度的薄膜，轉移至另一基板上， 結合形成一新穎材料，或單純地用來製作納米等級厚度的鍵合式絕緣層砂晶圓(Silicon on Insulator; SOI) 〇 此外’對於低介電損失値（Dielectric Loss)、氧化物原始基板之薄膜轉移，如SrTi03、 ai2o3、Si02等’因其氫離子植入若在低溫環境下執行，雖然有後續之高溫加熱處理，並 無明顯離子聚合以産生微細氣泡現象，致無法分離薄膜。該項基板雖能經由高溫環境下 植入離子後，再經高溫退火處理，能産生氣泡。但該項辦法離子聚合效率不佳，需提高 植入離子的劑量，以補充在高溫下植入過程中，大量擴散損失之離子。而本發明則可利 用分段離子植入方法，先在高溫下植入離子，産生晶界間裂紋，再於低溫下植入離子到 該裂紋中，避免大量擴散損失，有效率補充劑量，使之達到足夠濃度，施以轉變溫度以 上之微波照射’産生微細氣泡及聚合而成分離膜，其所需之離子植入總劑量較習知方法 爲低，有降低成本及薄膜缺陷密度效果，並能達到分離薄膜目的。 綜合上述說明，本發明之方法可歸納成下列三種操作方法： 一·先在高溫下植入離子，在植入時立即産生晶界裂紋，但植入之劑量還不能夠引發表 面氣泡産生。接著再於較低溫下持續植入離子，補充劑量，然後將此原始基板01 與目標基板07鍵合成爲一鍵合結構1〇。使鍵合結構10在轉變溫度以上，施以高頻交 替電場或磁場照射08處理時，原始基板01內的植入離子或分子離子〇6，有足夠能量 聚合分離薄膜層〇2。 二·在原始基板01內離子植入形成植入離子分離層03之後，便將原始基板〇1作一預熱 (pre-baking)處理’使植入離子或分子離子〇6，在植入層作初步聚合，增大內壓， 産生晶界裂紋，使原始基板〇1表面處於一欲分離之高應力臨界狀態。然後將原始基 板〇1與目標基板14鍵合，最後再將此鍵合結構在轉變溫度以上施以高頻交替電場或 磁場照射08處理，使其吸收能量，産生膨脹壓力，斷裂植入離子分離層〇3，分離薄 膜層02 〇 16 1290342 在本發明中，溫度升高現象乃本發明制程中産出的副産品’非如在傳統加熱方法 中，爲主要使用手段。且溫度突然升高現象，不利薄膜轉移。所以本發明利用一加熱裝 置，升高鍵合結構體10至一轉變溫度以上，此溫度低於智切法所需之溫度，達到穩定均 勻化制程溫度目的，減少整體鍵合結構的熱應力。 相較于習知之薄膜轉移制程，本發明之方法是在轉變溫度上施以一高頻交替電場或 磁場，如微波，高周波，電感應耦合場等裝置産生之交替電磁場照射處理，利用電磁感 應方式，直接激發該等植入離子或離子分子的動能，取代以傳統加熱制程的升溫，間接 激發植入離子或離子分子之動能方法，進而能有效率地輸入所需的能量，減少能源消 耗。而且透過層的每一層可以同時均一地激發，使動能被激發後所出現的溫度上升效應 所産生的加熱溫度分佈均勻，達到改善生産品質效果。除此之外，本發明之電磁感應激 發動能方式，還能大幅節省制程時間，縮短生産周期，與傳統升溫加熱方式相較，更有 降低時間成本，制程潔淨，操作方便等優勢。 此外，本發明之方法更可應用在薄膜的切割制程上。例如先利用一離子植入法，以 於一薄膜內形成一層或一層以上的離子分離層，接著在轉變溫度以上，施以一高頻交替 電場或磁場照射該薄膜，使該離子分離層中的植入離子聚合爲氣體分子，分離該薄膜， 完成薄膜切割。 以下本發明更提供一些較佳之具體實施例，藉以進一步說明本發明的架構製作方法 與特點。 首先應用微波輻射激發離子分離層中的分子動能爲例，說明本發明以電磁感應方 式，激發植入離子或離子分子動能，達到薄膜轉移目的的原理。 第一實施例實施時，原始基板爲一 P型，晶格方向(100)，電阻値爲10-50 ohm-cm， 表面覆蓋2000人二氧化矽(Si02)，單面拋光，8”矽晶圓片，經過劑量爲4.0X 1016/cm2， 植入能量爲200 KeV，氫分子離子(H2+)植入。目標基板爲一 P型，晶格方向(100)，電阻 値爲10-50 ohm-cm，單面拋光矽晶圓片。兩矽晶圓片於室溫經電漿力_鍵合法鍵合爲一 17 1290342 鍵合結構體，置於一商用可調溫度微波爐內，以轉變溫度設定爲200°C退火處理十五 分鐘，然後緊接在此溫度之下以2.45 GHz頻率，l〇〇〇w輸出功率，15分鐘的微波照射 後，一矽薄膜自原始基板分離轉移至目標基板，厚度約爲0.6//in，合成一以二氧化砂爲 絕緣層之SOI晶圓材料。 第二實施例實施時，原始基板爲一 P型，晶格方向(100)，電阻値爲10-50 ohm-cm， 單面拋光，8”砂晶圓片，經過兩次氫分子離子(Η/)植入制程，第一次氫分子離子植入之 植入溫度爲550°C，劑量爲1.0Χ l〇16/cm2，植入能量爲200KeV ;緊接第二次氫分子離子 植入’植入溫度爲室溫’劑墓爲4 X 10 /cm ’植入能量爲200 KeV。目標基板爲一‘罕面 拋光玻璃晶圓片。兩矽晶圓片於室溫經電漿加強鍵合法鍵合爲一鍵合構造體，置於一商 用可調溫度微波爐內，以轉變溫度定爲200°C退火處理十五分鐘，然後緊接在此溫度 之下以2.45 GHz頻率，1000W輸出功率，15分鐘的微波照射後，一矽薄膜自原始基板 分離轉移至目標基板，厚度約爲0.5//m，合成一以玻璃基板爲主體之S0I晶圓材料。 第三實施例實施時，原始基板爲一 P型，晶格方向(100)，電阻値爲10-50 ohm-cm， 單面拋光矽晶圓片，經過兩次離子植入制程。首先植入劑量爲1 X l〇14/cm2，植入能量 爲180 KeV，硼離子(B+);其次植入劑量爲5 X 1016/cm2，植入能量爲129 KeV，氫分子 離子(H/)。目標基板爲一單面拋光玻璃晶圓片。兩晶圓片於室溫經電漿加強鍵合法鍵合 爲一鍵合構造體，置於一商用可調溫度微波爐內，以轉變溫度定爲120°C退火處理十 分鐘，然後緊接在此溫度之下以2.45 GHz頻率，1000W輸出功率，5分鐘的微波照射 後，一矽薄膜自原始基板分離轉移至目標基板，厚度約爲0.35//m，合成一以玻璃基板 爲主體之SOI晶圓材料。 第四實施例實施時，原始基板爲一內建具有厚度爲1.5 //m濃度爲（B/Ge: 2.0 X 102()/2.0X 1021/cm力硼鍺摻雜之高濃度磊晶層，其上有一〇·35 /zm厚度之無摻雜矽磊 晶層之晶格方向(100)，單面拋光矽晶圓片，經過劑量爲5 X 1016/cm2，植入能量爲12〇 KeV ’氫分子離子(H2+)植入。目標基板爲一單面拋光玻璃晶圓片。兩晶圓片於室溫經電 漿加強鍵合法鍵合爲一鍵合構造體，置於一商用可調溫度微波爐內，以轉變溫度定爲 120°C退火處理十分鐘，然後緊接在此溫度之下以2.45 GHz頻率，l〇〇〇W輸出功率， 18 1290342 5分鐘的微波照射後，一矽薄膜自原始基板分離轉移至目標基板，厚度約爲0.3//m，合 成—以玻璃基板爲主體之SOI晶圓材料。 第五實施例實施時，原始基板爲一晶格方向(0001)，雙面拋光氧化鋁晶圓片，經過 第—次劑量爲3 X 10I6/cm2，植入能量爲200 KeV，氫分子離子(Η2+)在65(TC溫度下植入。 緊接第二次氫分子離子植入，植入溫度爲室溫，劑量爲3 X 1016/cm2，植入能量爲200 KeV°目標基板爲一單面拋光一晶格方向(100)砂晶圓片。兩晶圓片於室溫經電漿加強鍵 合法鍵合爲一鍵合構造體，置於一商用可調溫度微波爐內，以轉變溫度定爲450°C退 火處理十五分鐘，然後緊接在此溫度之下以2.45 GHz頻率，1000W輸出功率，5分鐘 的微波照射後，一矽薄膜自原始基板分離轉移至目標基板，厚度約爲0.6//m，合成一以 覆蓋單晶氧化鋁薄膜爲表面的矽晶圓基板材料。 由於微波本身並不生熱，其系爲一種電磁波，波長在lcm-lm (頻率30GHz-300MHz) 的區域內，介於紅外和無線電波之間。微波在空間中産生電場與磁場的變化，能均勻地 透過物質，它産生的正極和物質裏的極性分子中的負極相吸，然後在極高的頻率引發物 質內的極性分子跟著電場交互的改變極化方向，繞一軸作加速旋轉振動。由於微波輻射 引起的吸收極化作用，使極性分子在極高速頻率下振動（每秒二十四億五千萬次,2.45 GHz)，動能增加迅速，而鄰近分子也跟著加速運動，因互相摩擦，產生摩擦熱，使得 溫度上升。雖然微波的穿透力只有2.5—3.5釐米(cm)左右，但已足夠應付現今半導體晶 圓材料的厚度需求。 本發明中將鍵合構造體升溫至一轉變溫度，然後緊接在此溫度之下以微波照射，除 了應用以上所述極性分子電耦極化原理，還運用激發基板原子作爲微波吸收材料，協助 能量轉移。因基板爲半導體材料，電阻値高，吸收微波後將使基板內載子運動加速，産 生大伴隨電流，致該伴隨感應電流依電阻加熱原理(Resistive Heating)産生能量，藉由 非彈性碰撞，直接迅速轉移該能量至植入的離子或分子離子形成之分子，增加其分子動 能，而不需經過加熱過程來提高鍵合基板對的溫度，間接激發分子動能。 因著在轉變溫度下操作微波照射，有效增強植入離子或分子離子吸收微波能力，加 19 1290342 速動能，逃脫鄰近基板原子的束縛，打斷與其形成的鍵結，和另一脫離之植入離子相遇’ 結合形成氣體分子及其對應之成核機構，在擴大成核機構産生之微細氣泡，導致的裂縫 長大過程中，合倂其他微細氣泡而形成氣膜。植入離子或分子離子動能的增強’ 一方面 直接吸收照射之微波的能量，一方面藉由與基板吸收微波導致的載子的非彈性碰撞’大 量快速轉移載子因電磁感應所産生的能量，轉化成爲分子動能，增加氣體碰撞頻率，産 生足夠內壓，擴大氣體體積，將薄膜自基板分離。本發明所提供之實施例一即是應用以 上表面極性分子簇團電磁感應制程産出之成果，驗證本發明之立論正確。 本發明藉由表面處理獲得表面極性分子簇團(Polar Molecular Cluster)，如矽晶圓經 標準潔淨（RCA cleaning method)處理得到在晶圓表面的水分子聚合體，或經氧電漿處 理的表面得到的氧離子聚合體，激化欲鍵合之晶圓表面狀態，能夠在短時間內增加鍵合 後鍵合構造體中兩晶圓接觸面原子間的反應速率，而與對方互相形成化學鍵，快速增強 鍵合能量（Bonding Energy)，使之在後續照射處理中，將薄膜自原始基板分離之前，能 達到一定要求的強度，避免在進行薄膜分離時，因氣泡之形成而與原始基板脫落。 本發明將鍵合構造體升溫至轉變溫度以上，改變物質特性，增高微波吸收係數，在 相關化學反應中做出本質上的變化，變更微波反應作用模式，並達到控制制程穩定性目 的。 以上所述僅爲說明本發明之較佳實施例，並非用以限定本發明之申請專利範圍；凡 其他未脫離發明所揭示之精神下所完成之等效改變或修飾，均應包含在下述之申請 專利範圍內。 【圖式簡單說明】 圖一至圖五爲本發明之薄膜轉移方法的制程示意圖。 圖示之符號說明 01原始基板 02 薄膜 03植入離子分離層 04 餘質層 20 1290342This method of utilizing a high-frequency alternating electric field or a magnetic field to excite molecular kinetic energy at a transition temperature can effectively greatly improve the significant lack of uniformity of the film separation temperature at the heating point. Therefore, the present invention utilizes such a method of exciting a molecular kinetic energy by applying a high-frequency alternating electric field or a magnetic field at a transition temperature, and is coupled with a wafer bonding technique and an ion implantation process to cut an equal area and a uniform thickness from a large-sized substrate. A film with a low defect density, transferred to another substrate, combined to form a novel material, or simply used to make a nano-scale thickness of a bonded-on-insulator (SOI) 〇 in addition to 'low-medium Dielectric loss Di (Dielectric Loss), thin film transfer of oxide original substrate, such as SrTi03, ai2o3, SiO2, etc. 'Because its hydrogen ion implantation is performed in a low temperature environment, although there is subsequent high temperature heat treatment, there is no obvious ion polymerization. In order to generate microbubbles, the film cannot be separated. Although the substrate can be implanted with ions in a high temperature environment and then annealed at a high temperature, bubbles can be generated. However, the ionic polymerization efficiency of this method is not good, and the dose of implanted ions needs to be increased to supplement the ions which are largely diffused and lost during implantation at a high temperature. The invention can utilize the segmented ion implantation method to first implant ions at a high temperature to generate intergranular cracks, and then implant ions into the crack at a low temperature, thereby avoiding a large amount of diffusion loss and efficiently replenishing the dose. A sufficient concentration is applied, and microwave irradiation above the transition temperature is applied to generate fine bubbles and polymerize to form a separation membrane, which requires a lower total ion implantation dose than conventional methods, and has the effect of reducing cost and film defect density, and Can achieve the purpose of separating the film. Based on the above description, the method of the present invention can be summarized into the following three operation methods: 1. First, ions are implanted at a high temperature, and grain boundary cracks are generated immediately upon implantation, but the implanted dose is not able to cause surface bubble generation. Then, the ions are continuously implanted at a lower temperature, the dose is replenished, and then the original substrate 01 and the target substrate 07 are bonded to form a bonding structure. When the bonding structure 10 is subjected to a high-frequency alternating electric field or a magnetic field irradiation 08 at a transition temperature or higher, the implanted ions or molecular ions 〇6 in the original substrate 01 have sufficient energy to polymerize and separate the thin film layer 〇2. 2. After ion implantation in the original substrate 01 to form the implanted ion separation layer 03, the original substrate 〇1 is subjected to a pre-baking process to cause implantation of ions or molecular ions 〇6 in the implantation layer. As a preliminary polymerization, the internal pressure is increased, and grain boundary cracks are generated, so that the surface of the original substrate 〇1 is in a high stress critical state to be separated. Then, the original substrate 〇1 is bonded to the target substrate 14, and finally the bonding structure is subjected to high-frequency alternating electric field or magnetic field irradiation 08 above the transition temperature to absorb energy, generate expansion pressure, and break implant ion separation. Layer 3, Separated Film Layer 02 〇16 1290342 In the present invention, the phenomenon of temperature rise is a by-product produced in the process of the present invention, which is not the main means of use in the conventional heating method. And the sudden rise in temperature is unfavorable for film transfer. Therefore, the present invention utilizes a heating device to raise the bonding structure 10 to a transition temperature or higher, which is lower than the temperature required for the wisdom cutting method, to achieve a stable uniformizing process temperature, and to reduce the thermal stress of the overall bonding structure. Compared with the conventional film transfer process, the method of the present invention applies a high-frequency alternating electric field or a magnetic field at a transition temperature, such as microwave, high-frequency, electric induction coupling field and the like, and alternate electromagnetic field irradiation treatment, using electromagnetic induction method. Directly stimulating the kinetic energy of the implanted ions or ion molecules, instead of inducing the kinetic energy of implanting ions or ion molecules by the temperature rise of the conventional heating process, thereby efficiently inputting the required energy and reducing energy consumption. Moreover, each layer of the transmission layer can be uniformly excited at the same time, so that the heating temperature distribution generated by the temperature rise effect which is generated after the kinetic energy is excited is uniform, and the production quality effect is improved. In addition, the electromagnetic induction kinetic energy mode of the invention can greatly save the process time and shorten the production cycle, and has the advantages of lowering the time cost, the process being clean and the operation being convenient, compared with the conventional heating method. In addition, the method of the present invention is more applicable to the cutting process of a film. For example, an ion implantation method is first used to form one or more ion separation layers in a film, and then a high frequency alternating electric field or a magnetic field is applied to irradiate the film above the transition temperature to make the ion separation layer The implanted ion is polymerized into gas molecules, the film is separated, and the film is cut. The following invention further provides some preferred embodiments to further illustrate the method and features of the architecture of the present invention. Firstly, the application of microwave radiation to excite the molecular kinetic energy in the ion separation layer is taken as an example to illustrate the principle of the invention for exciting the kinetic energy of implanted ions or ion molecules by electromagnetic induction to achieve the purpose of film transfer. When the first embodiment is implemented, the original substrate is a P-type, lattice direction (100), resistance 値 is 10-50 ohm-cm, surface covers 2000 people of cerium oxide (SiO 2 ), single-sided polishing, 8" twin The wafer has a dose of 4.0X 1016/cm2, an implantation energy of 200 KeV, and hydrogen molecular ion (H2+) implantation. The target substrate is a P-type, the lattice direction (100), and the resistance 値 is 10-50 ohm- Cm, single-sided polished 矽 wafer. Two 矽 wafers are bonded to a 17 1290342 bonded structure at room temperature by plasma force, placed in a commercial adjustable temperature microwave oven to change the temperature setting. Annealing at 200 ° C for fifteen minutes, and then immediately below this temperature at a frequency of 2.45 GHz, l 〇〇〇 w output power, after 15 minutes of microwave irradiation, a film is separated from the original substrate and transferred to the target substrate, The thickness is about 0.6//in, and a SOI wafer material with silica sand as the insulating layer is synthesized. When the second embodiment is implemented, the original substrate is a P-type, the lattice direction (100), and the resistance 値 is 10-50. Ohm-cm, single-sided polished, 8" sand wafer, after two hydrogen molecular ion (Η/) implantation processes, the first hydrogen molecular ion The implantation temperature is 550 ° C, the dose is 1.0 Χ l 〇 16 / cm 2 , the implantation energy is 200 KeV; next to the second hydrogen ion ion implantation 'implantation temperature is room temperature' agent tomb is 4 X 10 / cm ' implant energy is 200 KeV. The target substrate is a 'rare polished glass wafer. The two wafers are bonded to a bonded structure at room temperature by plasma reinforced bonding, placed in a commercial adjustable temperature microwave oven, and the annealing temperature is set at 200 ° C for 15 minutes, and then immediately Under this temperature, at a frequency of 2.45 GHz, 1000W output power, after 15 minutes of microwave irradiation, a film is separated from the original substrate and transferred to the target substrate, the thickness is about 0.5//m, and a S0I based on a glass substrate is synthesized. Wafer material. When the third embodiment is implemented, the original substrate is a P-type, lattice direction (100), and the resistance 値 is 10-50 ohm-cm. The wafer is polished on one side and subjected to two ion implantation processes. First implant dose is 1 X l〇14/cm2, implant energy is 180 KeV, boron ion (B+); second implant dose is 5 X 1016/cm2, implant energy is 129 KeV, hydrogen molecular ion (H/ ). The target substrate is a single-sided polished glass wafer. The two wafers are bonded to a bonded structure at room temperature by plasma reinforced bonding, placed in a commercial adjustable temperature microwave oven, and the annealing temperature is set to 120 ° C for annealing for ten minutes, and then immediately thereafter. Under the temperature of 2.45 GHz, 1000W output power, after 5 minutes of microwave irradiation, a film is separated from the original substrate and transferred to the target substrate, the thickness is about 0.35 / / m, and a SOI wafer based on a glass substrate is synthesized. material. When the fourth embodiment is implemented, the original substrate is a built-in high-concentration epitaxial layer having a thickness of 1.5 //m and a concentration of B/Ge: 2.0 X 102()/2.0X 1021/cm. It has a lattice orientation (100) of an undoped erbium epitaxial layer with a thickness of 〇·35 /zm, and a single-sided polished 矽 wafer with a dose of 5×1016/cm2 and an implantation energy of 12〇KeV. 'Hydrogen molecular ion (H2+) implantation. The target substrate is a single-sided polished glass wafer. The two wafers are bonded to a bonded structure at room temperature by plasma reinforcement bonding, and placed in a commercially adjustable In the temperature microwave oven, the annealing temperature is set to 120 ° C for annealing for 10 minutes, and then immediately below this temperature at 2.45 GHz frequency, l〇〇〇W output power, 18 1290342 5 minutes after microwave irradiation, a film Separating and transferring from the original substrate to the target substrate, the thickness is about 0.3//m, and synthesizing the SOI wafer material mainly composed of the glass substrate. When the fifth embodiment is implemented, the original substrate is in a lattice direction (0001), double-sided Polished alumina wafer, with a first dose of 3 X 10I6/cm2, implant energy of 200 KeV, hydrogen molecular ion (Η2+) 65 ( implanted at TC temperature. Immediately after the second hydrogen ion implantation, the implantation temperature is room temperature, the dose is 3 X 1016/cm2, and the implantation energy is 200 KeV. The target substrate is a single-sided polished crystal. Grain-oriented (100) sand wafer. The two wafers are bonded to a bonded structure at room temperature by plasma-enhanced bonding, and placed in a commercial adjustable temperature microwave oven with a transition temperature of 450 °C. Annealing for fifteen minutes, then immediately below this temperature at a frequency of 2.45 GHz, 1000W output power, after 5 minutes of microwave irradiation, a film is separated from the original substrate and transferred to the target substrate, the thickness is about 0.6 / / m, Synthesizing a germanium wafer substrate material covering the surface of a single crystal alumina film. Since the microwave itself does not generate heat, it is an electromagnetic wave having a wavelength of lcm-lm (frequency 30 GHz-300 MHz) in the infrared region. Between the radio wave and the microwave wave, the microwave generates a change in the electric field and the magnetic field in the space, and can uniformly permeate the substance, and the positive electrode and the negative electrode in the polar molecule in the substance are attracted to each other, and then the polarity in the substance is induced at a very high frequency. The change of the molecule along with the electric field Variable polarization direction, accelerating rotational vibration around an axis. Due to the absorption polarization caused by microwave radiation, the polar molecules vibrate at extremely high speed (2.45 million times per second, 2.45 GHz), and the kinetic energy increases rapidly. The neighboring molecules also follow the acceleration motion, which generates frictional heat due to mutual friction, which causes the temperature to rise. Although the penetration force of the microwave is only about 2.5-3.5 cm (cm), it is sufficient to meet the thickness requirements of today's semiconductor wafer materials. In the present invention, the bonding structure is heated to a transition temperature, and then irradiated with microwaves immediately below this temperature, in addition to applying the polar molecular electrocoupling polarization principle described above, and also using the excitation substrate atom as a microwave absorbing material to assist power change. Since the substrate is a semiconductor material, the resistance is high, and after absorbing the microwave, the carrier movement in the substrate is accelerated, and a large accompanying current is generated, so that the accompanying induced current generates energy according to the resistance heating principle (Resistive Heating), and the non-elastic collision directly The energy is rapidly transferred to the molecules formed by the implanted ions or molecular ions, and the molecular kinetic energy is increased without heating the substrate to increase the temperature of the bonded substrate pair, thereby indirectly exciting the molecular kinetic energy. Due to the operation of microwave irradiation at the transition temperature, it effectively enhances the ability of implanted ions or molecular ions to absorb microwaves, adding 19 1290342 kinetic energy, escaping the binding of adjacent substrate atoms, interrupting the bond formed with it, and implanting another detachment The ionic encounter ' combines to form a gas molecule and its corresponding nucleation mechanism, and expands the fine bubbles generated by the nucleation mechanism, causing the formation of a gas film by combining other fine bubbles during the growth of the crack. The enhancement of implanted ion or molecular ion kinetic energy directly absorbs the energy of the irradiated microwave, on the one hand, the inelastic collision of the carrier caused by the absorption of microwaves with the substrate, and the rapid transfer of the energy generated by the electromagnetic induction by the carrier. It is converted into molecular kinetic energy, increasing the gas collision frequency, generating enough internal pressure, expanding the gas volume, and separating the film from the substrate. The first embodiment provided by the present invention is to apply the results of the upper surface polar molecular cluster electromagnetic induction process to verify that the invention is correct. The present invention obtains a surface polar molecular cluster by surface treatment, such as a silicon wafer subjected to a standard clean (RCA cleaning method) to obtain a water molecular polymer on the surface of the wafer, or an oxygen plasma treated surface. The obtained oxygen ion polymer excites the surface state of the wafer to be bonded, and can increase the reaction rate between the atoms of the two wafer contact faces in the bonded structure after bonding in a short time, and form a chemical bond with each other, which is fast. Bonding Energy is used to achieve a certain strength before the film is separated from the original substrate in the subsequent irradiation treatment, and to avoid falling off from the original substrate due to bubble formation during film separation. The invention raises the bonding structure to above the transition temperature, changes the material properties, increases the microwave absorption coefficient, makes an essential change in the relevant chemical reaction, changes the microwave reaction mode, and achieves the purpose of controlling the process stability. The above description is only intended to illustrate the preferred embodiments of the present invention, and is not intended to limit the scope of the claims of the present invention; all other equivalent changes or modifications which are not departing from the spirit of the invention should be included in the following Within the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 to Fig. 5 are schematic diagrams showing the process of the film transfer method of the present invention. Symbol description shown 01 Original substrate 02 Thin film 03 Implanted ion separation layer 04 Residual layer 20 1290342
05原始基板正表面 06 植入離子或分子離子 07目標基板 08 高頻交替電場或磁場照射 09溫度增高器 10 鍵合結構體05 Original substrate front surface 06 Implanted ion or molecular ion 07 target substrate 08 High frequency alternating electric field or magnetic field irradiation 09 Temperature increaser 10 Bonded structure
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