TWI256724B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TWI256724B
TWI256724B TW093120316A TW93120316A TWI256724B TW I256724 B TWI256724 B TW I256724B TW 093120316 A TW093120316 A TW 093120316A TW 93120316 A TW93120316 A TW 93120316A TW I256724 B TWI256724 B TW I256724B
Authority
TW
Taiwan
Prior art keywords
type well
deep
type
well
semiconductor device
Prior art date
Application number
TW093120316A
Other languages
English (en)
Other versions
TW200507236A (en
Inventor
Ryoichi Ando
Akira Uemoto
Toshio Kakiuchi
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Publication of TW200507236A publication Critical patent/TW200507236A/zh
Application granted granted Critical
Publication of TWI256724B publication Critical patent/TWI256724B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW093120316A 2003-08-06 2004-07-07 Semiconductor device TWI256724B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003288153 2003-08-06

Publications (2)

Publication Number Publication Date
TW200507236A TW200507236A (en) 2005-02-16
TWI256724B true TWI256724B (en) 2006-06-11

Family

ID=34213282

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093120316A TWI256724B (en) 2003-08-06 2004-07-07 Semiconductor device

Country Status (5)

Country Link
US (1) US7345345B2 (zh)
JP (1) JP5079974B2 (zh)
KR (1) KR100749231B1 (zh)
CN (1) CN100435240C (zh)
TW (1) TWI256724B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7902634B2 (en) 2006-07-07 2011-03-08 Mitsubishi Electric Corporation Semiconductor device

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* Cited by examiner, † Cited by third party
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JP4530823B2 (ja) * 2004-12-02 2010-08-25 三洋電機株式会社 半導体装置及びその製造方法
US20070041144A1 (en) * 2005-05-23 2007-02-22 Clement Szeto Method for reducing substrate noise from penetrating noise sensitive circuits
CN101238580B (zh) * 2005-08-18 2010-06-16 富士通微电子株式会社 半导体器件及其制造方法
KR100688588B1 (ko) 2006-02-27 2007-03-02 삼성전자주식회사 래치-업의 발생을 방지할 수 있는 ｃｍｏｓ 반도체 장치
US7847581B2 (en) * 2008-04-03 2010-12-07 Stmicroelectronics (Rousset) Sas Device for protecting an integrated circuit against a laser attack
JP5259246B2 (ja) * 2008-05-09 2013-08-07 ルネサスエレクトロニクス株式会社 半導体装置
DE102008047850B4 (de) * 2008-09-18 2015-08-20 Austriamicrosystems Ag Halbleiterkörper mit einer Schutzstruktur und Verfahren zum Herstellen derselben
JP5896682B2 (ja) * 2011-10-18 2016-03-30 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US9287253B2 (en) 2011-11-04 2016-03-15 Synopsys, Inc. Method and apparatus for floating or applying voltage to a well of an integrated circuit
JP5725230B2 (ja) * 2014-04-09 2015-05-27 株式会社デンソー 半導体装置
JP6118923B2 (ja) * 2016-01-26 2017-04-19 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US9633992B1 (en) * 2016-02-23 2017-04-25 Vanguard International Semiconductor Corporation Electrostatic discharge protection device
CN108878417B (zh) * 2018-07-05 2020-10-30 江南大学 一种高维持mos辅助触发scr结构的瞬态电压抑制器
KR102482194B1 (ko) * 2018-08-24 2022-12-27 삼성전기주식회사 삽입손실이 개선된 cmos 트랜지스터의 배치 구조
CN110534512B (zh) * 2019-09-07 2023-02-07 电子科技大学 一种抗闩锁版图结构
CN118213372B (zh) * 2024-05-21 2024-08-23 天水天光半导体有限责任公司 16位透明锁存器

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JPS62155555A (ja) * 1985-09-18 1987-07-10 Sony Corp 相補型ｍｏｓトランジスタ
US4761571A (en) * 1985-12-19 1988-08-02 Honeywell Inc. Memory circuit enchancement to stablize the signal lines with additional capacitance
JPH05326862A (ja) * 1992-05-14 1993-12-10 Fujitsu Ltd 半導体装置
KR940003026A (ko) * 1992-07-13 1994-02-19 김광호 트리플웰을 이용한 반도체장치
JPH06232355A (ja) * 1993-02-02 1994-08-19 Hitachi Ltd Ｍｏｓ半導体製造装置
JPH08149011A (ja) * 1994-11-18 1996-06-07 Mitsubishi Electric Corp 電流加算型ディジタル／アナログ変換器
JP3419672B2 (ja) 1997-12-19 2003-06-23 富士通株式会社 半導体装置及びその製造方法
JP3196714B2 (ja) * 1998-03-05 2001-08-06 日本電気株式会社 トリプルウェル構造の半導体集積回路の製造方法
JP2000101045A (ja) * 1998-07-23 2000-04-07 Mitsubishi Electric Corp 半導体装置
KR20000041323A (ko) * 1998-12-22 2000-07-15 윤종용 트리플 웰 구조를 갖는 반도체 장치의 제조 방법
US6432761B1 (en) * 1999-10-01 2002-08-13 Microchip Technology Incorporated Apparatus and method for independent threshold voltage control of memory cell and select gate in a split-EEPROM
US6376870B1 (en) * 2000-09-08 2002-04-23 Texas Instruments Incorporated Low voltage transistors with increased breakdown voltage to substrate
JP2002222869A (ja) 2001-01-23 2002-08-09 Fuji Electric Co Ltd 半導体集積回路装置およびその製造方法
US6791883B2 (en) * 2002-06-24 2004-09-14 Freescale Semiconductor, Inc. Program and erase in a thin film storage non-volatile memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7902634B2 (en) 2006-07-07 2011-03-08 Mitsubishi Electric Corporation Semiconductor device

Also Published As

Publication number Publication date
CN1581354A (zh) 2005-02-16
KR100749231B1 (ko) 2007-08-13
TW200507236A (en) 2005-02-16
KR20050016107A (ko) 2005-02-21
JP5079974B2 (ja) 2012-11-21
JP2005072566A (ja) 2005-03-17
US20050045953A1 (en) 2005-03-03
CN100435240C (zh) 2008-11-19
US7345345B2 (en) 2008-03-18

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MM4A Annulment or lapse of patent due to non-payment of fees