TW480616B - Chemical mechanical polishing system and apparatus - Google Patents
Chemical mechanical polishing system and apparatus Download PDFInfo
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- TW480616B TW480616B TW90104644A TW90104644A TW480616B TW 480616 B TW480616 B TW 480616B TW 90104644 A TW90104644 A TW 90104644A TW 90104644 A TW90104644 A TW 90104644A TW 480616 B TW480616 B TW 480616B
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480616 — 五、發明說明(1) 5 - 1發明領域: 本發明係有關於/種化學機械研磨設備系統,特別是 有關於一種在化學機械研磨設備系統中的晶圓架(carrl er )裝置。 5-2發明背景: 半導體積體電路的製造是一具有許多複雜步驟的製程 ,其因應不同的電性產生許多微小的結構,這些微小的結 構組合起來便成為應用的元件。當在石夕晶圓上堆憂產生越 來越多層時,不平整的表面所產生的問題則越來越嚴重,480616 — V. Description of the Invention (1) 5-1 Field of the Invention: The present invention relates to a chemical mechanical polishing equipment system, and more particularly to a wafer carrier device in a chemical mechanical polishing equipment system. 5-2 Background of the Invention: The fabrication of a semiconductor integrated circuit is a process with many complicated steps. It generates many tiny structures in response to different electrical properties. These tiny structures combine to become an applied component. As the accumulation of worries on Shixi wafers becomes more and more multi-layered, the problems caused by uneven surfaces become more and more serious.
並且對於晶圓的表現與產量造成重大的衝擊。在製造過程 中,需要將多餘的材質移除的步驟稱為一平坦化過程。 CMP 1 ^ f來平坦化矽晶圓表面的技術為化學機械研磨( % 光台i的ί機械研磨技術一般涉及到使用一固定在圓形拋 向下力旦用光墊(pollshlng pad)與一支撐器提供晶圓一 化學添二墊,含研磨劑… 括 參照第_ m π + 晶圓架模t m ,一化學機械研磨系、统110傳統上包 拉、,且12〇、 一供應模組13〇、—拋光墊模組14〇And it has a major impact on wafer performance and yield. In the manufacturing process, the step of removing excess material is called a planarization process. The technology of CMP 1 ^ f to planarize the surface of a silicon wafer is chemical mechanical polishing (% mechanical polishing technology of the optical table i generally involves the use of a fixed, circular polishing pad and a pollshlng pad) and a The supporter provides a wafer with two chemical pads, including abrasive ... Including the _ m π + wafer frame mold tm, a chemical mechanical polishing system, the traditional 110 is drawn and drawn, and 12, a supply module 13〇 、 —Polishing pad module 14〇
第4頁 480616 五、發明說明(2) 及一整理模組1 5 0。拋光墊模組1 4 〇中在圓形拋光台上的拋 光墊傳統上由包含許多微小洞孔、聚脲(b 1 〇 w η polyurethane)製成的毯狀表面,以促使研磨液流至其下 的晶圓中研磨。晶圓架模組1 2 0提供一持架(h ο 1 d e r )以把 持晶圓使其朝下抵抗旋轉墊。在晶圓架模組1 2 〇中傳統的 牽制環(retaining ring) 12 5可以防止晶圓邊緣與拋光墊 接觸部分研磨變形。 另一方面,供應模組1 3 〇包括一旋轉系統(3 2、一壓力 系統1 3 4及一化學用品系統1 3 6。旋轉系統1 3 2通常用來負 責晶圓架模組1 2 0的旋轉運動。壓力系統1 3 4負責提供晶圓 架1 2 0的向下力量以使晶圓與拋光墊接觸。化學用品系統 1 3 6負責供應含有侵蝕與添加劑的研磨劑。再者,整理模 組1 5 0包括整理用化學品系統(c 0 n d ^ t i 〇 n i n g c h e m i c a 1Page 4 480616 V. Description of the invention (2) and a finishing module 150. The polishing pad on the circular polishing table in the polishing pad module 14 is traditionally made of a blanket-like surface made of polyurea (b 1 〇w η polyurethane) containing many tiny holes to promote the flow of abrasive fluid to it. Under the wafer. The wafer rack module 1 2 0 provides a holder (h ο 1 d e r) to hold the wafer downward to resist the rotation pad. The conventional retaining ring 12 5 in the wafer rack module 120 can prevent the wafer edge from being deformed by contact with the polishing pad. On the other hand, the supply module 130 includes a rotation system (32, a pressure system 134, and a chemical system 1 36. The rotation system 1 3 2 is generally used for the wafer rack module 1 2 0 The rotary motion of the pressure system 1 3 4 is responsible for providing the downward force of the wafer holder 120 to bring the wafer into contact with the polishing pad. The chemical supply system 1 3 6 is responsible for supplying abrasives containing erosion and additives. Furthermore, finishing Module 1 50 includes a finishing chemical system (c 0 nd ^ ti 〇ningchemica 1
Sy^tem) 154與機械手臂系統155。整理用化學品系統154 負貝i、應正理液’機械手臂系統1 5 5則負責整理過程的機 械動作。、 對於化學機械研磨系統1 1 〇而言,提供變化流暢且 可控,的拋光速率是非常重要的。然而,傳統的化學機械 ;^磨系、’先1 1 〇/、忐在非同時(e χ 一 s i t U )或同時但非真正同步 _ , ^ lme〜 in - situ)的墊整理(pad conditioning 過f王中維持叔力杏、由 九速率;也就是說,墊整理步驟無法與拋光 舌7的名構無法完成尺寸更小的I C製造。另一 I 口j η寺進行〇 士篆Sytem) 154 and robotic arm system 155. The finishing chemical system 154 Negative shell fluid, Ying Zhengli fluid ’robot arm system 1 5 5 is responsible for the mechanical actions of the finishing process. For the chemical mechanical polishing system 110, it is very important to provide a smooth and controlled change in polishing rate. However, the traditional chemical machinery; ^ grinding system, 'first 1 1 〇 /, 忐 in non-simultaneous (e χ a sit U) or simultaneous but not really synchronous _, ^ lme ~ in-situ) pad conditioning (pad conditioning Wang Fangzhong maintained Shu Li Xing, and the speed was nine; that is, the pad finishing step could not be completed with the polishing structure of the famous structure of the tongue 7. The smaller I can be manufactured in the temple.
480616 五、發明說明(3) 機 磨 研 械 機 學 化 成。 造本 它成 ,的 間高 空較 的費 大花 很中 用廠 佔工 組造 模製 理體 整導 ,半 面在 方台 5 - 3發明目的及概述: 研活。 械供步 機提同 學以正 化可真 種環驟 一 制步 供牽的 提的圓 明能晶 發功光 本理拋 ,整與 中合驟 景結牛:Ν 背種的 明一墊 發。光 之統)½ 述系e 上與 a V 於置i 鑒裝 c a 的c 磨化 圓制 晶牵 與^: 統製 系質 磨材 研⑽。 械er)f'J aone^ 學i統 t 化i系 種η力 ο 一 C壓 供彳下 提器與 的理轉 目整旋 一統的 另傳立 的用獨 明利由 發。可 本置並 裝, 架環 根據以上所述之目的,揭露一種在化學機械研磨設備 中晶圓架(c a r r i e r )的裝置,其至少包括一晶圓架模組用 以抓持一晶圓使其面朝下;一牵制環與整理模組與晶圓架 模組相連接,其用以保護晶圓邊緣避免與一拋光墊相接觸 部分產生研磨變形,並且執行拋光墊的一整理步驟( c ο n d i t i ο n i n g);及一第一供應模組與牽制環與整理模組 相連接,其用以使牽制環與整理模組旋轉、下壓,並供應 牽制環與整理模組整理用化學物品。480616 V. Description of the invention (3) Mechanical grinding research The cost is relatively high, the cost of space is relatively high, and the cost is very high. The factory uses the factory's construction team to mold the physical structure, and it is halfway in the square platform. 5-3 Purpose and summary of the invention: research. Mechanical steps and machine learning and learning to normalize the real kind of steps. One step to provide the perfect circle of Mingming crystal to give power to the principle, throwing the whole principle, and the whole scene of the United States and the United States: the mingling of the back of the seed. The system of light) is described on the system e and a v is placed on i and the c is polished by c. (Machine er) f'J aone ^ learn the system, t, the system, and the force ο a C pressure to supply the lifter and the turn of the head of the reunification of the unified and other independent use of the independent and independent development. According to the purpose described above, a rack carrier is disclosed for a wafer carrier device in a chemical mechanical polishing device, which includes at least a wafer rack module for holding a wafer so that Face down; a pinch ring is connected to the finishing module and the wafer rack module, which is used to protect the edge of the wafer from grinding deformation of the part in contact with a polishing pad, and performs a finishing step of the polishing pad (c ο nditi ο ning); and a first supply module connected to the pinning ring and the finishing module, which is used to rotate, press down the pinning ring and the finishing module, and supply chemicals for the pinning ring and the finishing module finishing.
480616 五、發明說明(4) 5 - 4發明詳細說明: 本發明的設計可被廣泛地應用到許多半導體設計中, 當本發明以一較佳實施例來說明本發明方法時,習知此領 域的人士應有的認知是許多的模組可以改變,這些一般的 替換無疑地亦不脫離本發明的精神及範疇。 其次,本發明用示意圖詳細描述如下,在詳述本發明 實施例時,表示系統的架構示意圖在會不依一般比例作局 部放大以利說明,然不應以此作為有限定的認知。 在此實施例中,揭露一種在化學機械研磨設備中晶圓 架(c a r r i e r )的裝置,其至少包括一晶圓架模組用以抓持 一晶圓使其面朝下;一牽制環與整理模組與晶圓架模組相 連接,其用以保護晶圓邊緣避免與一拋光墊相接觸部分產 生研磨變形,並且執行拋光墊的一整理步驟( c ο n d i t i οn i n g);及一第一供應模組與牽制環與整理模組 相連接,其用以使牽制環與整理模組旋轉、下壓,並供應 牽制環與整理模組整理用化學物品。一種化學機械研磨系 統至少包括一晶圓架模組至少包括一持架(holder )用以抓 持一晶圓使其面朝下;一拋光面模組至少包括一拋光墊, 用以提供拋光墊運動與固定;一牽制環與整理模組與晶圓 架模組相連接,其用以保護晶圓避免與拋光墊相接觸,並 且執行拋光墊的一整理步驟(conditioning); —第一供應480616 V. Description of the invention (4) 5-4 Detailed description of the invention: The design of the present invention can be widely used in many semiconductor designs. When the present invention is described by a preferred embodiment of the method of the present invention, it is known in this field. Those skilled in the art should recognize that many modules can be changed, and these general replacements undoubtedly do not depart from the spirit and scope of the present invention. Second, the present invention is described in detail with schematic diagrams below. In detailing the embodiments of the present invention, the schematic diagram of the architecture of the system will not be partially enlarged according to the general scale for the convenience of explanation, but it should not be used as a limited recognition. In this embodiment, a wafer carrier device in a chemical mechanical polishing device is disclosed, which includes at least a wafer rack module for holding a wafer with its face down; a pinning ring and finishing The module is connected to the wafer rack module, which is used to protect the edge of the wafer from abrasion deformation caused by contact with a polishing pad, and a finishing step (c ο nditi οn ing) of the polishing pad is performed; and a first The supply module is connected with the pinning ring and the finishing module, and is used for rotating and pressing the pinting ring and the finishing module, and supplying the chemicals for the pinning ring and the finishing module. A chemical mechanical polishing system includes at least a wafer frame module including at least a holder for holding a wafer with its face down; a polishing surface module includes at least a polishing pad for providing a polishing pad. Movement and fixation; a pinch ring is connected with the finishing module and the wafer rack module, which is used to protect the wafer from contact with the polishing pad, and performs a conditioning step of the polishing pad; first supply
480616 I五、發明說明(5) 模組與牽制環邀敕 '^^-— 模組旋轉、下壓Γ ΐ 連接,其用以使臺如班 ° ' Sl — W, ,並供應牵制環與整ίΐ ϋ & 彳環與整理 口口,及弟二供肩桓細傲曰门正理輪組整理用仆風仏 圓架模組旋轉、^:…,二日日圓架模組相連接,复 干物 。 下屋,並供應晶圓架模组抱#田、用以使晶 抛先用化學物品 第二 示意圖。 一晶圓 模組5 0及 一持架用 圓架模組 3 4與一化 圖所示 一化學 架模紐 一拋光 以抓持 2 0連接 學品供 組2 0的 向下的 晶圓架模 k供晶圓 責提供抛光相 模組4 0則包括一 為根據 機械研 20、一 墊模組 P曰圓使 ’其包 應、糸統 持架之 力量用 關的化 固定在 本發明 磨系統 牽制環 40。晶 之面朝 括一旋 3 6 〇旋 旋轉動 以抵抗 學添加 線性或 的化學 1 〇包括 與整理 圓架模 下。晶 轉糸統 轉糸統 作。壓 拋光墊 劑,例 旋轉台 機械 研磨系 一晶圓架供 模組2 5、— 組2 0包括才目 圓架供應模 32、一壓力 3 2負責在抛 力供應系統 。化學品供 如研磨劑等 上的抛光塾 統的架構 應模組3 0 整理供應 關電路與 組3G與晶 供應系統 光過程中 3 4則負責 應糸統3 6 。抛光塾 本發明的關鍵在於牽制與整理模組2 5。牽制與整理模 組2 5不只扮演牽制的角色,同時也兼具整理的功能。牵= 與整理模組2 5包括一與晶圓架模組2 〇連接的牽制環( retaining ring);牽制環是利用傳統整理器的材質所製 成的,例如鑽石平面磨砂(diamond planar grit),取^ 了傳統牽制環的材質,如此則可將牽制環視為整理哭。合480616 I V. Description of the invention (5) Module and pinning ring 敕 '^^ -— The module rotates and presses Γ ΐ to connect, which is used to make the platform °' Sl — W, and supply the pinning ring and Ϊ́ ΐ ϋ & 彳 与 and finishing mouth, and the second two for the shoulders 桓 桓 桓 傲 门 门 门 门 门 正 正 正 正 架 架 架 架 架……: ..., two-day yen frame module connection, complex Dry things. Get out of the house and supply the wafer rack module hug field, which is used to make the crystal first use chemicals. Second schematic. A wafer module 50 and a round frame module 3 4 for holding and a chemical frame mold shown in a schematic diagram for polishing to hold 20 downward wafer racks connected to a school for group 20 The die k is used to provide the polishing phase module 40 for the wafer, and it includes a module that is based on the mechanical research 20 and a pad module P, which is used to fix the strength of the package and the system holder in the present invention. System pin down ring 40. The face of the crystal is directed to include a spin of 360 ° rotation to resist the addition of linear or chemical chemistry, including 10 ° and finishing under the round frame mold. Crystal transfer system transfer system operation. Pressure polishing pad, such as rotary table, mechanical polishing system, a wafer rack for module 2 5, — group 2 0 includes Caimu round frame supply mold 32, a pressure 3 2 is responsible for the polishing force supply system. The structure of the polishing system on the supply of chemicals, such as abrasives, etc. Module 3 0 organizes the supply and closes the circuit and the 3G and crystal supply system. During the light process 3 4 is responsible for the system 36. Polishing 塾 The key of the present invention lies in pinning and finishing the module 25. The pinning and sorting module group 2 5 not only plays the role of pinning, but also has the function of sorting. The pinch = the finishing module 2 5 includes a retaining ring connected to the wafer rack module 2 0; the retaining ring is made of the material of a traditional finisher, such as diamond planar grit The material of the traditional restraint ring is taken ^, so the restraint ring can be regarded as a finishing cry. Close
480616 五、發明說明(6) 然,本發明中的牽制環具有與製程相配合的彈性,故其材 質亦不限定於傳統整理器的材質。而將牽制環結合整理的 功能的優點是使化學機械研磨系統1 0所佔的空間縮小,因 為機械手臂系統就可以被省略。 另一方面,整理供應模組5 0與牽制與整理模組2 5相連 接,在整理供應模組5 0中的環旋轉系統5 4與環壓力供應系 統5 6負責牵制環旋轉的動作與下壓的力量。環壓力供應系 統5 6可以供應氣壓或油壓的力量下壓牽制環。如此,牽制 環旋轉的動作與下壓的力量與晶圓架模組2 0中的持架是獨 立分開的。再者,一整理用化學品系統5 6用以供應整理過 程中需要的化學劑。整理供應模組5 0與牵制與整理模組2 5 的結合可以在拋光晶圓同時活化拋光墊(同時同步r ea 1 - i η -s i t u),使其與晶圓拋光結合在一起(r e a 1 t i m e )。再者 ,固定的拋光速率可以確保拋光墊的表面情形始終如一。 本發明的一個目的在於提供附加整理器功能的牽制環 。牽制環以傳統整理器的材質製成,可以執行整理的程序 ;另一方面,有別於持架的供應系統可以使牽制器更有彈 性地執行整理工作。 第三圖說明本發明之化學機械研磨設備的剖面示意圖 。一晶圓架模組7 8包括一持架7 5可以抓持一晶圓7 4。一牽 制環7 2與一整理供應模組7 6相連接,整理供應模組7 6用以480616 V. Description of the invention (6) Of course, the pinning ring in the present invention has the flexibility to match the manufacturing process, so its material is not limited to the material of the traditional finisher. The advantage of combining the restraint ring with the finishing function is that the space occupied by the chemical mechanical polishing system 10 is reduced, because the robot arm system can be omitted. On the other hand, the finishing supply module 50 is connected to the pinning and finishing module 25, and the ring rotation system 54 and the ring pressure supply system 56 in the finishing supply module 50 are responsible for the action and restraint of the ring rotation. The power of pressure. The ring pressure supply system 56 can supply the force of air pressure or oil pressure to push down the pinch ring. In this way, the rotation of the containment ring and the pressing force are separated from the holder in the wafer rack module 20 independently. Furthermore, a finishing chemical system 56 is used to supply chemicals required during the finishing process. The combination of the finishing supply module 50 and the pinning and finishing module 2 5 can activate the polishing pad at the same time as polishing the wafer (simultaneously synchronize r ea 1-i η -situ) to combine it with wafer polishing (rea 1 time). Furthermore, a fixed polishing rate ensures that the surface of the polishing pad is consistent. It is an object of the present invention to provide a restraint ring with an additional finisher function. The pinning ring is made of the material of a conventional finisher and can perform the finishing process; on the other hand, a supply system different from the holder can make the gripper perform the finishing work more elastically. The third figure illustrates a schematic cross-sectional view of the chemical mechanical polishing equipment of the present invention. A wafer rack module 7 8 includes a holder 7 5 capable of holding a wafer 74. A holding ring 7 2 is connected to a finishing supply module 7 6. The finishing supply module 7 6 is used for
480616 五、發明說明(7) 負責本發明牽制環7 2的旋轉動作、壓力供應與整理用化學 品的供應。牽制環7 6可與一拋光墊7 0接觸,並執行抛光墊 7 0的整理工作。另一方面,晶圓架模組7 8與一晶圓架供應 模組80相連接,晶圓架供應模組80用以負責晶圓架模組78 的的旋轉動作、壓力供應與拋光用化學品的供應。 以上所述僅為本發明之較佳實施例而已,並非用以限 定本發明之申請專利範圍;凡其它未脫離本發明所揭示之 精神下所完成之等效改變或修飾,均應包含在下述之申請480616 V. Description of the invention (7) Responsible for the rotation action, pressure supply and supply of chemicals for the pinch ring 72 of the present invention. The pinch ring 76 can be in contact with a polishing pad 70 and perform the finishing work of the polishing pad 70. On the other hand, the wafer rack module 78 is connected to a wafer rack supply module 80. The wafer rack supply module 80 is responsible for the rotation of the wafer rack module 78, pressure supply and polishing chemistry. Supply of goods. The above are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention shall be included in the following Application
第10頁 480616 圖式簡單說明 第一圖為傳統CMP設備的一架構示意圖; 第二圖為本發明CMP設備的架構示意圖;及 第三圖說明本發明之化學機械研磨設備的剖面示意圖 主要部分之代表符號: 10 化學機械研磨系統 2 0 晶圓架核組 25 牽制環與整理模組 30 晶圓架供應模組 3 2 旋轉系統 34 壓力供應系統 36 化學品供應系統 4 0 拋光墊模組 50 整理供應模組 54 環旋轉系統 5 6 環壓力供應系統 7 0 抛光塾 72 牽制環 7 4 晶圓 75 持架 7 6 整理供應模組Page 10 480616 Brief description of the diagram The first diagram is a schematic diagram of the structure of a conventional CMP equipment; the second diagram is a schematic diagram of the structure of a CMP equipment of the present invention; Representative symbols: 10 Chemical mechanical polishing system 2 0 Wafer frame core group 25 Retaining ring and finishing module 30 Wafer frame supply module 3 2 Rotating system 34 Pressure supply system 36 Chemical supply system 4 0 Polishing pad module 50 Finishing Supply module 54 ring rotation system 5 6 ring pressure supply system 7 0 polishing ring 72 pin ring 7 4 wafer 75 holder 7 6 finishing supply module
第11頁 480616 圖式簡單說明 7 8 晶圓架核組 80 晶圓架供應模組 1 1 0化學機械研磨系統 1 2 0晶圓架模組 125 牽制環(retaining ring) 1 3 0供應模組 1 3 2旋轉系統 1 3 4壓力系統 1 3 6化學用品系統 1 4 0拋光墊模組 1 5 0整理模組 154整理用化學品系統(conditioning chemical system) 1 5 5機械手臂糸統Page 11 480616 Brief description of drawings 7 8 Wafer cores 80 Wafer supply modules 1 1 0 Chemical mechanical polishing system 1 2 0 Wafer modules 125 Retaining ring 1 3 0 Supply modules 1 3 2 Rotary system 1 3 4 Pressure system 1 3 6 Chemical supplies system 1 4 0 Polishing pad module 1 5 0 Finishing module 154 conditioning chemical system 1 5 5 Robotic arm system
第12頁Page 12
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TW90104644A TW480616B (en) | 2001-03-01 | 2001-03-01 | Chemical mechanical polishing system and apparatus |
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TW90104644A TW480616B (en) | 2001-03-01 | 2001-03-01 | Chemical mechanical polishing system and apparatus |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7425172B2 (en) | 2003-03-25 | 2008-09-16 | Nexplanar Corporation | Customized polish pads for chemical mechanical planarization |
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2001
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7425172B2 (en) | 2003-03-25 | 2008-09-16 | Nexplanar Corporation | Customized polish pads for chemical mechanical planarization |
US7704122B2 (en) | 2003-03-25 | 2010-04-27 | Nexplanar Corporation | Customized polish pads for chemical mechanical planarization |
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