TW383414B - Photoresist agent processing method and photoresist agent processing system and evaluation method and processing apparatus for photoresist agent film - Google Patents

Abstract

A kind of photoresist agent processing method which is to set the substrate to be processed at a specified temperature and rotates the substrate to be processed with specified temperature and applying a resist solution onto the substrate at the same time to form the photoresist film on the substrate; heating the processed substrate with photoresist agent film formed thereon and cooling the processing substrate down to the specified temperature after the heating process. The feature is to measure the film thickness of photoresist agent film on the processing substrate between the heating and cooling processes.

Description

Printed by the Central Bureau of Standards, TW Industrial and Consumer Cooperatives, A7, B7, V. Description of the Invention (1) (Background of the Invention) The present invention relates to a method and processing system for performing photoresist treatment on a substrate to be processed, and Evaluation method of photoresist film, and particularly, 'About an evaluation method and processing device of a photoresist film formed of a chemically amplified photoresist. For example, in the process of photoresist treatment in semiconductor manufacturing, a photoresist solution is coated on the surface of a substrate to be processed, such as a semiconductor wafer (hereinafter referred to as a wafer), and a photoresist film is formed. The image liquid is subjected to a development process, but a series of processes have been performed, and a photoresist treatment system has been used in the past. The photoresist processing system, as a processing unit for a general unit, is provided with, for example, a hydrophobization treatment for improving the fixability of the photoresist, a coating treatment for coating a photoresist liquid, and the like. The substrate to be processed after the application of the agent solution is placed in a predetermined temperature atmosphere and used for heat treatment for curing the photoresist film. It is used to heat the exposed substrate to be treated in a predetermined temperature atmosphere. A plurality of processing apparatuses that perform image processing and development processing such as development processing, and carry wafers to be processed in and out of each processing apparatus by a transport mechanism such as a transport arm. Of course, the photoresist film formed on the wafer must have the desired film thickness, and good film thickness uniformity is also required. Therefore, the film thickness of the photoresist film formed by the photoresist treatment system was measured, but conventionally, the film thickness side of the photoresist film was measured in the following order. First, a photoresist film is formed on a photoresist processing system for a dummy wafer. Then, the dummy wafer is taken out of the photoresist processing system by a bracket or the like, so that the paper size conforms to the Chinese National Standard (CN'S) Λ4 specification (2 丨 0X 297 mm) ~ ^ 1 ^ 1 n ^ — · < '-— · ιΰ ^ I n ...} ♦ — (谙 Read the back page first and then fill out this page) Order A7 £ 7_.,, V. Description of the invention (2) Film thickness measurement outside the system Device to measure photoresist film thickness. According to the measurement results, the humidity in the photoresist coating device of the photoresist processing system and the wafer rotation speed of the photoresist coating device were adjusted to make the film thickness uniformity good. However, when the dummy wafer is taken out of the photoresist processing system and the film thickness is measured, the photoresist processing system is temporarily stopped. In addition, since the measurement of the film thickness of the photoresist film must be performed periodically for each batch, etc., as a result, the throughput is reduced. In addition, the environment of the photoresist processing system that is turned on after measuring the film thickness of the photoresist film and the system environment when forming the photoresist film of the virtual wafer are not exactly the same. The thick measurement results are directly applicable to the adjustment of the photoresist film formation conditions. "Printed by the Ministry of Standards and Technology Co., Ltd. of the Ministry of Standards and Industry (read the notes on the back and then fill in the lettuce page) * fm nn ， Manufacture of chemically amplified photoresist with excellent sensitivity or clarity for super LSI, but when using a chemically amplified photoresist and forming a photoresist film, the film thickness information of the photoresist film will follow Problems that change over time. For example, suppose that photoresist coating is continuously applied to 100 wafers. After the photoresist film is formed, the thickness of the entire wafer is measured one by one in the order of photoresist coating. During the period from the film thickness of one piece to the measurement of the 100th film thickness, a time period of 99 pieces must be measured. The film thickness data changes with this elapsed time. For example, when using a chemically amplified photoresist that reduces the film thickness of 8 〇 〇 A after coating by about 1 OA per hour, if 100 wafers are continuously coated in the same manner as above, The film thickness is measured one by one. If it takes 5 hours to measure the film thickness of 100 pieces, the film thickness data of the 100th photoresist film will be reduced by about 50 A compared with the first piece. Therefore, even if there is no abnormality in the coating process, the thickness of the paper is based on the paper size of the Chinese Standard (CNS) A4 (2 丨 0X 297 mm) of the paper standard ~ " Α? Β7 Central Bureau of Standards, Ministry of Economic Affairs Ordnance Industry Cooperatives Seal 1i V. Description of Invention (3) The state of decrease over time. In addition, any abnormality in the coating process changes the film thickness of the photoresist film, and the film thickness of the photoresist film to be applied thereafter decreases in order. Therefore, by investigating the relationship between the elapsed time for measuring the film thickness data and the film thickness data, it is impossible to judge whether the state of the photoresist film is good, or any abnormality causes the film thickness to change. As mentioned above, when the photoresist film is not formed by using the film thickness data through a chemically amplified photoresist that changes over time, it is difficult to determine whether the film thickness has changed due to the measurement of the film thickness of the photoresist film. Therefore, there is a problem that it cannot be accurately judged whether there is an abnormality in the coating process or the state of the photoresist film. (Summary of the invention) • An object of the present invention is to provide a method for measuring a film thickness of a photoresist film without taking out a substrate to be processed such as a wafer outside the photoresist processing system, and adjusting light according to the measurement result. The photoresist formation conditions of the photoresist treatment system, and a photoresist treatment method and photoresist treatment system with good pushing amount. The purpose of the present invention is to provide a material such as a chemically amplified photoresist, which can be used to form a photoresist film through the passage of time and film thickness data, to accurately determine the coating process or the photoresist formed. Film thickness evaluation method and processing device for abnormal film thickness of agent film. The present invention provides a photoresist processing method, which belongs to a photoresist processing method of a photoresist processing system, and is characterized by having a first process of setting a substrate to be processed at a predetermined temperature, and the above-mentioned setting of the substrate at a predetermined temperature. (Read the precautions on the back before you fill in this page). The size of the bound paper is applicable to China National Standards (CNS) A4 specifications (2 丨 〇 X 297 mm) -Θ A7 B7 Consumption cooperation. Du Yinxuan 5. Description of the invention (4) The second process of coating the photoresist liquid on the substrate while rotating the substrate and forming the photoresist film on the substrate, and heating the photoresist The third process of the substrate to be processed formed by the film, and the fourth process of cooling the processed substrate after heating to a predetermined temperature, between the third process and the fourth process, the processed process is measured in the photoresist processing system. The thickness of the photoresist film on the substrate. It is also possible to measure the film thickness of the photoresist film on the substrate after the fourth step. According to this method, the film thickness of the photoresist film of the substrate to be processed can be measured without taking the substrate to be processed out of the photoresist processing system. As a result of measuring the film thickness of the photoresist film, when the film thickness is not as expected, or when the film thickness uniformity is not within the allowable range, at least adjust the photoresist coating equipment ... The rotation speed of the substrate to be processed in the resist coating device, the predetermined temperature of the substrate to be processed in the first step :, or the temperature of the photoresist liquid. According to this method, since the film thickness of the photoresist film can be measured inside the photoresist processing system, the environment in the photoresist processing system can be maintained without stopping the photoresist processing system during the film thickness measurement. Be certain. Therefore, the results obtained by measuring the film thickness of the photoresist film can be used directly, and it is easy to adjust the conditions for forming the photoresist film. It is also possible to consider the method for measuring the film thickness of the photoresist film described above on a dedicated stand for measuring the film thickness provided in the photoresist processing system, but the transport device in the photoresist processing system holds the substrate to be processed. It can be implemented during the period. In this case, the space for the stand for measuring the film thickness can be omitted, and the compactness and refinement of the overall photoresist processing system can be expected. In addition, it becomes unnecessary to process the base----I i VI 1 IN ^^ n ^ i K \, service * (Please read the precautions on the back before filling this page) This paper size applies Chinese national standards ( CNS) A4 specification (210X 297 mm) A767 printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs, V. Description of the invention (5) The process of transporting the board to the stand for measuring film thickness. The measurement of the film thickness of the photoresist film may be performed on the substrate to be inspected held in the photoresist processing system. The substrate to be inspected is a container such as a bracket stored in a photoresist processing system. When measuring the film thickness of the photoresist film, the substrate to be inspected may be transported from the container by a transport mechanism. . In this case, the photoresist film of the substrate to be inspected for which the measurement of the film thickness is to be completed may be washed off in a photoresist coating device. The substrate to be processed for inspection for which the photoresist solution is washed off is stored in a tray in the processing system, and it may be used again for the next photoresist film thickness inspection. As a result, the substrate to be processed for inspection can be used multiple times. The invention provides a photoresist processing system, which is characterized in that: a photoresist liquid is coated on a substrate while a substrate to be processed is rotated, and a photoresist coating device is formed on the substrate. And a heating device for heating the substrate to be processed, and a conveying device for holding and processing the substrate to be processed, and a device for measuring a film thickness of a photoresist film formed on the substrate to be processed and disposed above a loading inlet of the heating device The film thickness measuring device is configured. Generally, the substrate to be processed is put into a heat treatment process for the purpose of hardening the photoresist solution after being coated with the photoresist solution. Therefore, the device for measuring the film thickness is provided above the heat treatment device, and when the substrate to be processed after the heat treatment is shipped from the heat treatment device, it is necessary to pass through the point for measuring the film thickness or the vicinity thereof. Therefore, the thickness of the photoresist film can be measured immediately after the heat treatment by the heat treatment device without moving the substrate to be processed more than necessary. As a result, the throughput can be increased. This paper is suitable for Sichuan National Standard (CNS) A4 size (210X 297mm) ~: ~: ----- „~ 丨 < \ 装 I — (_Please read the notes on the back before filling this page ), 1T printed by the Central Standards Bureau, Ministry of Economic Affairs, M Industrial Consumer Cooperative, A7, B7. 5. Description of the invention (6) In addition, the present invention provides a photoresist processing system, which is characterized in that: the substrate to be processed is rotated while the photoresist is resisted. A photoresist coating device for applying an agent solution on a substrate and forming a photoresist film on the substrate; a plurality of heating devices for heating a substrate to be processed to a first temperature; and a device for cooling at least the substrate to be processed to A plurality of temperature adjusting devices with a second temperature function, a conveying device for holding and processing a substrate to be processed, and a conveying device provided above at least one of the heating device and the temperature adjusting device, and the heating device and the temperature adjusting device are in multiple stages. The film thickness measuring device is configured to measure the film thickness of the photoresist film formed on the substrate to be superposed. The cooling here includes forced cooling through the circulation of a refrigerant, etc., and natural cooling through the temperature of the atmosphere. However, in this case, any situation after the heating treatment by the heating device or the adjustment treatment by the temperature adjustment device can be performed immediately without moving the substrate to be processed to more than necessary to measure the photoresist film. The thickness of the film can increase the throughput. The device for measuring the film thickness of the photoresist film may be provided above the conveyance path of the substrate to be processed. In this way, the light of the substrate to be processed can be measured while being conveyed by the conveyer. The film thickness of a resist film. The present invention provides a method for evaluating film thickness, which is characterized by: memory of information related to the film thickness variation of a chemically amplified photoresist film formed on the substrate to be processed over time. It consists of a process and a process of measuring the film thickness of a chemically amplified photoresist film formed on a substrate to be processed, and a process of correcting the above-mentioned measured film thickness / number in accordance with the memory data. Method 'Because it is made in accordance with the same paper size as the elapsed time, the paper standard of China (CTNS) Λ4 specification (210X297 male f) (Please read the note on the back first (Please fill in this page again for matters) — Λ'Γ installed. 、 1T printed by the Central Bureau of Standards of the Ministry of Economic Affairs β Industrial Consumer Cooperative A7 B7,-_-------... _____________ 1 5. Description of Invention (7) The data on the change in the thickness of the resist film is used to correct the structure of the film thickness of the chemically amplified photoresist film formed on the substrate to be processed. Therefore, the correct film thickness can be grasped regardless of the elapsed time.値. In the film thickness evaluation method, it is judged whether or not the film thickness of the chemically amplified photoresist film formed on the substrate to be processed is corrected according to the data related to the change in elapsed time. When the corrected film thickness is outside the allowable range, an alarm is issued. Therefore, it is possible to accurately and quickly know that the formed photoresist film is abnormal. In the film thickness evaluation method, since the film thickness of the chemically amplified photoresist film formed on the substrate to be processed is measured, and the data used for the film thickness compensation according to the measurement are used to compensate and correct the data, it can be accurate regardless of the elapsed time. Grasp the number of film thickness. The present invention provides a processing device, which is characterized by integratedly forming a mechanism for forming a chemically amplified photoresist film on a substrate to be processed, and memorizing the chemically amplified photoresist formed on the substrate to be processed over time. Mechanisms related to the film thickness variation of the film, and a mechanism to measure the film thickness of the chemically amplified photoresist film formed on the substrate to be processed, and a mechanism to correct the measured film thickness in accordance with the stored data . (Embodiment of the Invention) FIG. 1 shows the implementation of the hydrophobic treatment, the photoresist liquid coating treatment, and the like, which are performed separately for the wafer W cleaning process to improve the fixability of the photoresist. Appropriate heat treatment after processing, and a cooling processor that cools the wafer W to a predetermined temperature after the heat treatment, and after exposure (please read the precautions on the back before filling this page)-

、 1T This paper size is applicable to Chinese National Standard (CNS) Λ4 specification (210 X 297 mm) -1 〇- Printed by the Ministry of Economic Affairs Central Standards Bureau, M Industrial Consumer Cooperative, 1i A7 B7 V. Description of invention (8) Coating development processing system 1 for various processing apparatuses such as heat treatment and the like. The coating development processing system 1 includes a mounting section 2 in which a plurality of cassettes C for accommodating a plurality of wafers w are arranged and placed, and a cassette c for placing in the mounting section 2 is taken out. The wafer w is transferred to a transfer mechanism 4 of a transfer arm 3 as a transfer device. The transfer mechanism 4 is movable on a transfer path 5 provided along the arrangement direction of the cassettes C. Various processing apparatuses that perform predetermined processing on the wafer W are arranged on both sides of each of the transport paths 7, 8 with the two transport arms 3, 6 therebetween. A substrate mounting portion 9 is disposed between the transport path 7 and the transport path 8. In addition, a brush cleaning device 10 for cleaning the surface of the wafer W taken out of the cassette C by rotating the wafer W while brushing the wafer W is provided, and the wafer W is subjected to high-pressure jet cleaning water. Washing device 1 Γ, hydrophobizing treatment device 12 for hydrophobizing the surface of wafer W and improving the fixability of the photoresist, cooling devices 1 3 and 16 for cooling wafer W to a predetermined temperature, and photoresist liquid The photoresist coating device 14 coated on the surface of the rotating wafer W, heating the wafer W coated with the photoresist solution, or heating the heating device 15 after exposure to the wafer W, will expose the photoresist. The developing wafer processing apparatus 17 supplies the developing liquid to the surface of the subsequent wafer while rotating on its surface while developing. A film thickness measuring device 18 is provided above the heating device 15. The processing through these processing devices is intensified to a certain extent, and these processing devices are concentrated into an appropriate processing device group to reduce the installation space and improve the processing efficiency. The loading and unloading of the wafers W in these processing apparatuses is carried out by two transfer arms 3,6. In addition, these processing devices are arranged on the shell of the paper, the size of which is the state of China (CNS) Λ4 specification (2 丨 〇 X 297 mm) -11- (Please read the precautions on the back before filling this page) ',-° ΑΊ B7 Printed by the Ministry of Industry and Standards, M Co., Ltd. Consumer Cooperatives. 5. Description of Invention (9) 2 0. The photoresist coating device 14 is housed in a container 14a, and has a structure shown in Fig. 2. In other words, the cup 21 containing the crystal wafer W is provided with a rotary chuck 2 2 that holds the wafer W in a horizontal state by vacuum suction. The rotary chuck 2 2 is provided below the cup 21. The drive mechanism 23 such as a pulse motor is freely rotatable. The rotation speed can also be arbitrarily controlled via the control device 24. The atmosphere in the cup 21 is evacuated from the center of the bottom of the cup 21 by an exhaust device (not shown) such as a vacuum pump provided outside. The photoresist liquid or solvent is discharged through a drain pipe 25 provided at the bottom of the cup 21 to a drain tank 26 provided below the cup 21. The photoresist liquid ejected from the wafer W is ejected from the photoresist liquid ejection nozzle N. The nozzle N is held on the nozzle holder 31. The photoresist liquid discharge nozzle N is supplied from a photoresist liquid supply source R provided in a photoresist liquid tank or the like through a photoresist liquid supply pipe 41 and supplies a predetermined photoresist liquid. The photoresist liquid supply tube 41 and the filtrater 42 are installed in the middle to remove impurities such as particles. In addition, the supply of the photoresist liquid is performed by a supply mechanism 4 3 such as a diaphragm pump, and a certain amount of the photoresist liquid is discharged. The nozzle handle 3 1 is provided with a forward path 3 5 a and a multiple path 3 5 b constituted by a pipe for circulating a temperature-adjusting fluid, considering that the temperature-regulating fluid supplied from the outside through the forward path 3 5 a passes through the forward path. 3 5 3 circulates in the complex circuit 3 5 b, and can maintain the photoresist liquid flowing in the photoresist liquid supply pipe 41 at a certain temperature, so that the discharged photoresist liquid often reaches a predetermined temperature. ----- IM --'-.— 装-(谙 Please read the notes on the back before filling in this page) The size of the paper is applicable to China National Standard (CNS) A4 specifications_ (210X297mm) · 12 -Printed by A7 ____E_, a member of the Central Bureau of Standards and Consumer Cooperatives, V. Description of the invention (10) On the one hand, the solvent from the solvent supply source T of the solvent tank, etc. The tube 4 5 is supplied to the solvent nozzle S, and the nozzle 3 is provided. In order to maintain the solvent flowing in the solvent tube 4 5 at a predetermined temperature, a route 3 6 is formed by a pipe for circulating a temperature regulating fluid. a and compound road 3 6 b. As described above, the nozzle holder 3 1 that holds the photoresist liquid discharge nozzle N and the solvent nozzle S in a group is moved to a predetermined position on the wafer W by the scanning arm 37 7 a of the scanning mechanism 37. The scanning arm 3 7 a is configured to be able to move in three ways, that is, it can move in the X, Y, and Z directions. A chamber 5 1 is formed in the upper part of the outer shell 1 4 a constituting the outer wall of the photoresist coating device 14. The temperature and humidity adjusted air is adjusted in the temperature and humidity adjustment device 5 2 through a high-performance air filter 5 4. Supply air into the room 51. The temperature and humidity adjustment device 5 2 is controlled by a control device 24. The downflow air purified from the spout 5 5 of the chamber 5 1 is sent into the cup 2 1. The atmosphere in the photoresist coating device 14 is exhausted to the outside through a separately provided exhaust port 56. The hydrophobic treatment device 12, the cooling device 13, and the heating device 15 are shown in Figures 3 and 4 and have a laminated structure. That is, a cooling device 13 for cooling the wafer W to a predetermined temperature is provided in the lower stage, and a hydrophobic treatment for hydrophobizing the surface of the wafer W and improving the fixing property of the photoresist is stacked on the cooling device 13. The device 12 and the hydrophobizing treatment device 12 are stacked with a wafer W coated with a photoresist liquid by the photoresist coating device 14 to heat the hardened wafer. Photoresist liquid heating device 15. This paper size applies Chinese National Standard + (CNS) A4 specification (210X297mm I)-13-(Please read the precautions on the back before filling in this page).

, 1T A7 B7 Printed by Nugong Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5.Invention (11) Hydrophobization treatment device 12, cooling device 13 and heating device 15 The wafers W are imported and exported 12a, 13a, 15a is set on the front side of each processing device, that is, on the conveying path 7 side, and a conveying arm 3 is provided at a position opposite to such a conveying exit 12a, 13a, 15a. The transport arm 3 is provided with two recorders 3 a, 3b 3 c 'which directly hold the wafer w above and below, and each of the three tweezers 3 a, 3b' 3 c slides in a direction along the base 3 d. , That is, sliding in the X direction. The base platform 3 s supports the lifting and lowering ability of the conveying arm 3 60 in the upward + direction. The state of freedom of movement ', that is, the state of freedom of movement in the Z direction. Therefore, the wafers W held by the tweezers 3a, 3b, and 3c of the transport arm 3 are brought into and out of the hydrophobizing treatment device 12, cooling device 13 and heating device 15 freely. In addition, the conveying arm 3 is in a state of free rotation in the 0 direction by an appropriate driving mechanism. As shown in Figs. 3 and 4, a film thickness measuring device 18 is provided above the loading inlet 15a of the heating device 15. An optical sensor head 18 a is installed at the front end of these measurement conveying arms 18, and light with an appropriate frequency is radiated downward from the sensor head 18 a, that is, toward the surface of the wafer w. The thickness of the photoresist film formed on the wafer W is measured by the reflected light obtained by reflecting the irradiated light on the surface of the wafer W. This measurement data is sent to the control device 24 and used to correct the conditions for forming the photoresist film. That is, the film thickness of the photoresist film can be adjusted as the measurement data is adjusted by adjusting the rotation speed of the wafer. That is, the measurement data is input to the control device 24, and the control device 24 determines the rotation speed of the wafer based on the relationship between the film thickness of the measurement data and the desired film thickness, and the rotation speed ----- = --Γ Set-(Read the notes on the back side and fill in this page first),-° This paper size applies to China's 1S Standard (CNS) A4 (210X 297 mm) -14- Central Bureau of Standards, Ministry of Economic Affairs Printed by the Ordnance and Consumer Cooperative ¾ A7 B7, V. Description of the invention (12) The data is transmitted to the drive mechanism 23. Thus, the drive mechanism 23 rotates the wafer with the rotation speed data. Therefore, it is coated on the wafer The photoresist solution is expanded with the rotation speed of the wafer, and a photoresist film having a desired film thickness can be formed on the wafer. The coating development processing system 1 of the embodiment of the present invention has the above-mentioned For example, when the carrier C of the virtual wafer W of the substrate to be processed for measuring the film thickness of the photoresist film is placed on the mounting section 2 by a transport robot (not shown), the transport is performed. The mechanism 9 takes out the wafer W in the carriage C and delivers it to the transport arm 3. The transport arm 3 is sequentially transported and loaded The received wafer W goes to the brush cleaning device 10 and the water cleaning device 1 Γ. The brush cleaning device 10 and the water cleaning device 1 1 perform a predetermined cleaning process on the wafer W. After the processing is completed, the wafer W is transported. The arm 3 takes out the wafer W that has been processed, and transports the wafer W to the hydrophobization processing device 12 and loads it in the device. The wafer W that is subjected to the hydrophobization treatment on the surface in the hydrophobization processing device 12 is transported by the transport arm. 3 is mounted on the cooling device 1 3 and set at a predetermined temperature. Then, the + wafer W is transported to the photoresist coating device 1 4 by the transport arm 3, and in this device, the wafer W is supplied while rotating. The photoresist solution is subjected to photoresist treatment. When the photoresist coating process is completed, the wafer W is unloaded from the photoresist coating device 1 4 by the transport arm 3 and is transported to the heating device 1 5 In this device, a predetermined heat treatment is applied, and the photoresist liquid system is hardened so that a photoresist film is formed on the wafer W. The wafer W after the heat treatment is completed is transferred from the heating device 15 by the transport arm 3. At this time, at the same time as the wafer W is being carried out, it is carried in and out by the heating device 15 1 5 a Upper film thickness measuring device 1 8 For this paper size, the Chinese National Standard (CNS) Λ4 specification (210X297 mm) — · 15_ 'n 1-m · rt n -—button clothes n I • .. ., —. (Please read the precautions on the back before filling this page), 11 A7 B7 Printed by the Shell Standard Consumer Cooperative of the Ministry of Economic Affairs of the People ’s Republic of China 5. Description of the invention (13) Film thickness of the photoresist film. The thickness of the resist film can be determined arbitrarily on the X axis when the wafer W is shipped from the heating device 15. The measurement position is not particularly limited in the present invention, but it is, for example, about five. The measurement distance, that is, the distance between the film thickness measuring device 18 and the wafer W is set to the distance from the surface of the wafer W when the wafer W is transported out from the inlet 15 a of the heating device 15 and is carried out. It is not necessary to move the conveying arm 3 to the Z direction when the film thickness is formed, and it is more ideal for simplifying the measurement process. When the measurement distance cannot be adjusted on the surface of the wafer W carried out as described above, the wafer W that has completed the heat treatment is fully pulled out from the heating device 15 in the X direction by the transport arm 3 until it enters the measurement film. Raise the wafer W in the Z direction up to the thickness range, and measure the film thickness of the photoresist film while moving in the X direction. According to the coating development processing system 1 of the above embodiment, the film thickness of the photoresist film can be measured without transporting the wafer W to the outside of the coating development processing system 1. Therefore, in order to measure the film thickness of the photoresist film, the process of transporting the wafer W to the outside of the coating development processing system 1 can be simplified, and it is not necessary to stop the coating development processing system 1 when measuring the film thickness, and the result becomes Can increase push volume. In addition, since the film thickness of the photoresist film is measured in the coating development processing system 1, the environment inside the system is kept constant, and the measurement result of the film thickness of the photoresist film can be directly used to adjust the light. It becomes easy to form a strip of the resist film. The measurement of the film thickness of the photoresist film formed on or above the wafer W is carried out while the transport arm 3 is holding the wafer w. Therefore, when the film thickness measurement is performed, it is a dedicated space that does not require the wafer W to be placed. This makes it possible to additionally measure the film thickness without increasing the overall size of the coating development processing system 1. In addition ----- 〇 ---, >-.!-Packing ------ order --- ^ --- (Please read the notes on the back before filling this page) This paper size is applicable to China National Standard (CNS) Λ4 specification (210X297 mm) · 16 · Printed A7 £ 7_ by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, 'V. Description of the invention (14) No additional photoresist for wafer W The special transport process of the film thickness. In addition, since it is not necessary to install a film thickness measuring device outside the coating development processing system 1, it is possible to save space in a clean room. In the above embodiment, a measuring film thickness device 18 is provided above the inlet 15 a of the heating device 15 and the measuring film thickness of the photoresist film is attached to the wafer W from the heating device 15 There are about 5 places on one straight line in the X direction, but generally, in this measurement, about 25 of the wafer W are used as the measurement points. Therefore, as shown in FIG. 5, the heating device 1 5 Above the inlet 15 a, five measuring film thicknesses 18 can be set side by side. With such a structure, it is possible to measure the film thickness of 5 X 5 = 25 only by performing the same process as the measurement of the above-mentioned embodiment. In addition, if the conveying arm 3 is rotated in the 0 direction, the film thickness of the photoresist film can be measured in more places, and a more detailed film thickness result can be obtained. 'The film thickness of the photoresist film for measuring wafer W is not limited to the heat treatment performed by the heating device 15 according to the above embodiment, and may also be measured after the cooling treatment of the cooling device 13 after the heat treatment. can. In the same way as after the heat treatment, the wafer W that has been cooled down is transported from the cooling device 13 by the transport arm 3, but at this time, the wafer 3 is carried out from the cooling device 13 with the wafer W. However, at this time, the film thickness of the photoresist film can be measured using the film thickness measuring device 13 on the upper part of the loading inlet 15 a of the heating device 15 simultaneously with the process of carrying out the wafer W. In addition, a film thickness measuring device 1 8 is provided above the conveying path 7 or above the conveying path 8 (not shown), and the film of the photoresist film is measured while the wafer W is being conveyed through the conveying arms 3 and 6. Thick too. This paper size applies to " China S Standard (CNS) A4 Specification (210X297 mm) ~~ -17-~ ~ ----- "-'' 1 Packing ------- Order-- ----- ^ 』line (read the notes on the back and then fill out this page)

AY B7 V. Description of the invention (15) After measuring the film thickness of the photoresist film, the wafer W is transported into the photoresist coating device 14 through the transport arm 3, and while the device W rotates the wafer W, The solvent is supplied from the solvent nozzle 5 and the photoresist film is removed. The wafer W from which the photoresist film has been removed is transported back to the carriage C by the transport mechanism 4 and stored until the next measurement of the film thickness of the photoresist film. As a result, the wafer W for measuring the film thickness can be used a plurality of times, and it is not necessary to prepare a wafer for measuring the film thickness of the photoresist film each time, thereby reducing costs. The photoresist film formed on the wafer W is a photoresist stripping device (not shown) in a photoresist stripping device (not shown) except that the photoresist coating device 14 is removed as described above. It may be removed. As a result of measuring the film thickness of the photoresist film, as shown in FIG. 6, the film thickness of the photoresist film 70 formed on the wafer W is within an allowable range (the upper film thickness tma X to the lower film thickness tmi η ), It is not necessary to adjust the conditions for forming the photoresist film of the coating development processing system 1, but when the photoresist film 70 exceeds the upper limit film thickness tma X as shown in FIG. 7, or as shown in FIG. When the ground photoresist film 70 is lower than the lower limit film thickness. Tmi η, at least the temperature of the wafer immediately before the photoresist liquid is coated, or the temperature of the photoresist liquid discharged from the photoresist nozzle N Any temperature will be adjusted by the following mechanism. Thereby, conditions for forming a resist film with a desired film thickness can be obtained. On the one hand, as shown in FIG. 9, the upper limit of the allowable range of the photoresist film 10 formed on the wafer W on the line L is thicker, and when the lower limit of the other allowable ranges is thinner, first, At least changing the number of wafer W rotations during photoresist solution coating or adjusting the humidity in the photoresist coating device can improve the uniformity of the film thickness, and then, if necessary, exceed the above

This paper size applies Chinese National Standard (CNS) Α4 size (210 X 297 mm) -IS (谙 Please read the precautions on the back before filling this page) -Packing ·

* 1T The staff of the Central Bureau of Standards of the Ministry of Economic Affairs has printed A7 B7__ for cooperatives. V. In the case where the upper limit film thickness tma X of the invention description (16) is the same as the lower limit film thickness tmi η, at least Either the temperature of the wafer before the resist liquid, or the temperature of the photoresist liquid discharged from the photoresist liquid nozzle N. Thereby, with a desired film thickness, film formation conditions of a photoresist film having good film thickness uniformity can be obtained. The temperature of the wafer immediately before the photoresist liquid is adjusted through the cooling device 13, and the temperature of the photoresist liquid discharged from the photoresist liquid discharge nozzle N is provided through the nozzle The temperature regulating fluid is adjustable. The number of rotations of the wafer W when the photoresist liquid is applied is adjustable by a driving mechanism 23 such as a pulse motor controlled by the control device 24, and the humidity in the photoresist coating device 1 4 is borrowed. The temperature and humidity adjustment device 52 controlled by the same control device 24 can be adjusted. As described above, after the adjustment of the coating development processing system 1, the thickness of the photoresist film may be measured in order to confirm the adjustment contents. At this time, the film thickness of the previous photoresist film may be measured, and the wafer W for measuring the film thickness stored in the cassette C may be used. It is also possible to measure the film thickness of the photoresist film and adjust the coating development processing system 1 based on the measurement results to repeat the process until the film thickness and film thickness uniformity of the photoresist film are within acceptable ranges. _ In the above embodiments, the substrate to be processed is embodied as a wafer, but it is not limited to this. For example, a glass substrate for L C D may be used. According to the photoresist treatment method according to the embodiment of the present invention, the thickness of the photoresist film can be measured without transporting the substrate to be processed to the outside of the photoresist processing system. Therefore, in order to determine the film thickness of the photoresist film, the process of transporting the processed substrate out of the photoresist processing system can be omitted. At the same time, this paper size applies the national standard (CNS) Α4 specification (210X 297 mm) 19-------.-- " installed-(read the precautions on the back before filling (This page), 1T ο line printed by A7 __ ^ _ B7___ of the Central Standards Bureau Shellfisher Consumer Cooperative. 'V. Description of the invention (17) It is not necessary to stop the photoresist treatment device, as a result, the amount of push can be increased. In particular, when the film thickness of the photoresist film is measured inside the photoresist processing device, the measurement result can be used directly, and it becomes easy to adjust the photoresist film formation conditions. In addition, when measuring the film thickness of the photoresist film while the transport device is holding the substrate to be processed, the measurement of the film thickness of the photoresist film becomes a dedicated space without placing the substrate to be processed, so there is no need to increase the overall size. The size of the photoresist treatment system can be added to determine the film thickness process. Furthermore, it is not necessary to add a special transportation process for measuring the film thickness of the photoresist film of the substrate to be processed. In addition, when measuring the film thickness of the inspection target substrate stored in the photoresist processing system, it is not necessary to transport the measurement substrate to the photoresist processing system every time the film thickness of the photoresist film is measured. It can be expected to improve the operating rate of the photoresist treatment system. In particular, the photoresist film of the substrate to be inspected for inspection and measurement of the film thickness after washing off, and the substrate for the film thickness measurement can be used multiple times, and it becomes a film that does not need to measure the photoresist film every time. The prepared plural substrates to be processed can reduce costs. A film thickness measuring device for measuring a film thickness of a photoresist film formed on a substrate to be processed is provided above a loading port of a heating device. Since it eliminates the need for a conventional film thickness measuring device that was externally installed outside the photoresist processing system, it is possible to save space in the clean room. Hereinafter, as another example, an evaluation method of a photoresist film formed on a semiconductor wafer will be described, and in particular, a method and an apparatus for evaluating a film thickness of a photoresist film formed of a chemically amplified photoresist will be described. The evaluation method and processing device according to the embodiment can be applied to the coating development processing system configured as described above, but in this embodiment, it is explained that the paper standards are applicable to the national standard (for the vertical coating development) ( CMS) A4 specification (210X 297 mm) -20-_ ----- U— — '; ya installed ------ ^-order ---.--- ^ b line (read first read Note on the back, please fill out this page again) Printed by the Central Ministry of Economic Affairs to the Consumer Consumption Cooperative of the Bureau A7 _B7,, V. Description of Invention (19) Multi-stage configuration of G3, G4, G5; Groups 1 and 2 G1, G2 The multi-segment devices are arranged on the front side of the system (directly in front of Figure 10). The multi-segment devices of Group 3 G 3 are adjacent to the cassette station 1 10, and the multi-segment devices of Group 4 G 4 are adjacent to the interface. The multi-stage device of the fifth group G5 is arranged on the back side. As shown in FIG. 11, in the first group G 1, the semiconductor wafer W is placed in a rotating chuck in a cup CP and stacked in two stages from below to serve as a rotary processing device for performing a predetermined process. The photoresist processing device (COT) and the developing device (DEV) according to this embodiment. In the second group G 2, a photoresist coating device (COT) and a developing device (DEV) according to this embodiment are also overlapped in two steps from below. In the photoresist coating unit (C ◦ T ), Because the drainage of the photoresist liquid is also complicated in terms of mechanism or maintenance, it is ideal to arrange it in the lower stage as described above. However, it may be configured in the upper section if necessary. As shown in FIG. 12, the third group G 3 is an open type processing device that stacks the semiconductor wafers W on the placement section SP and executes predetermined processing in an order of eight steps from below; for example, a cooling device (C 0 L), hydrophobization device (AD), alignment device (ALIM), expansion device (EXT), pre-baking (PREBAKE) and post-baking device (P 0 BAKE). In the fourth group, G 4 also overlaps the open type processing device sequentially from below, for example, 8 sections; cooling device (COL), expansion, cooling device (EXTCOL), expansion device (EXT), cooling device (C0L), pre-baking Drying device (PREBAKE) and after-drying device (P 0 BAKE). The size of this paper is in accordance with the National Standard of China (CNS) Λ4 Specification (210 × 297 mm) -22-------- installed ---- ^ --- ordered --- ^ --- ^ Ο line (Read the precautions on the back before filling in this page) A7 printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs __B7 _. V. Description of the invention (20) Cooling device (C ◦ L) that will lower the processing temperature, ( EXTCOL) is arranged in the lower section, and the pre-drying device (PREBAKE), post-drying device (POBAKE) and hydrophobicization device (AD) with high humidity are arranged in the upper section, which can reduce the thermal interference between the devices. However, it can also be a random multi-stage configuration. The mesial portion 1 4 is the same size as the processing station 12 in the depth direction, but is made small in the width direction. Transportable pick-up cassettes CR and fixed-type buffer cassettes BR are arranged in two sections on the front surface of the mesial surface portion 14. A peripheral exposure device 12 8 is disposed on the back portion, and wafer transport is disposed on the center portion.体 126. The wafer carrier 126 is moved in the X and Z directions and stored in the two cassettes CR, BR and the peripheral exposure device 1 2 8. The wafer carrier 1 2 6 is an extension device (EXT) that can be rotated in the β direction, and is a multi-stage device belonging to the fourth group G 4 of the processing station 12 side, and a wafer transfer adjacent to the exposure device side. The station (not shown) also becomes accessible. In the coating development processing system configured as described above, for example, the semiconductor wafer W is sequentially transported and each process is performed as described below. First, the semiconductor wafers W before processing are carried out one by one from the wafer cassette CR by a wafer carrier 1 2 and carried into an alignment device (ALIM). The semiconductor wafer W positioned in the device is transported out through the main wafer transport mechanism 1 2 4 and transported to a hydrophobization device (AD) for water repellent treatment. After the hydrophobization treatment is completed, the semiconductor wafer W is transported out via the main wafer transport mechanism 124 and transported to a cooling device (COL), where the device is cooled. In the following, the semiconductor wafer W is coated with a photoresist on this paper. The size of the paper applies to the Chinese standard (CNS) A4 (210X297 mm) ~ -23-: ~ (谙 Please read the precautions on the back before filling this page) Binding A7 B7. V. Description of the invention (21) cloth device (C Ο T), pre-drying device (PR R Ε Β A Κ Ε), expansion of the 'cooling device (EXTCOL), the interface part 11 4 transported to the exposure device, and then Transported to the expansion unit (EXT) of the fourth group G4, the development device (D E V), the post-drying device (POBA KE), the expansion device of the third group G 3 (E XT), etc. and processed them Then, the processed semiconductor wafer W is housed in a wafer cassette CR. Hereinafter, the photoresist coating device (C 0 T) of this embodiment will be described with reference to FIG. 13. In the photoresist coating sheet (C 0 T) of this embodiment, a chemically amplified photoresist film is formed on the wafer W as a prerequisite. Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs --------. "Package-I (read the precautions on the back and fill in this page) in the photoresist coating device (COT), The ring-shaped cup CP is arranged at the center of the bottom of the device, and the rotary chuck 1 5 2 is arranged on the inside. The rotary chuck 1 5 2 is configured to hold the semiconductor wafer W in a fixed state by vacuum adsorption. The chuck rotation control unit 1 8 is controlled to rotate by the rotational driving force of the driving motor 15 4. The driving motor 1 5 4 can be screen-movably disposed in the opening 15 0 provided on the bottom plate of the device 15 0 a. A cap-like flange member 15 made of aluminum is coupled to a lift driving device 160 made of, for example, an air cylinder and a lift guide mechanism 16 2. For example, SUS is mounted on the side of the drive motor 154. The formed cylindrical cooling jacket 1 6 4 and the flange member 15 8 are installed so as to cover the upper half of the cooling jacket 1 6 4. When the photoresist is applied, as shown in FIG. 13 'Flange The lower end 1 5 8 a of the component 1 5 8 is in close contact with the bottom plate 150 of the device near the outer periphery of the opening 150 a and seals the inside of the device. When transferring the semiconductor wafer W between the chuck 152 and the tweezers 1 2 4 a of the main wafer transport mechanism, the paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -24-Central of the Ministry of Economic Affairs Standard Bureau si Industrial Consumer Cooperative Society ¾ A7 _ B7, V. Description of the invention (22), because the lifting drive device raises the drive motor 1 5 4 or the rotating chuck 1 5 2 upwards, so the flange member 1. 5 8 The lower end floats from the device bottom plate 150. In Fig. 14, a photoresist nozzle for supplying the photoresist liquid to the wafer surface of the semiconductor wafer W. 1 8 6 is supplied through the photoresist The tube 1 8 8 is connected to the photoresist supply unit (not shown). The photoresist nozzle 1 8 6 is a photoresist waiting portion 1 90 which is arranged outside the cup 2 0 and is detachably mounted on the light. The front end of the resist scanning arm 19 2 can be moved to a predetermined photoresist liquid discharge position provided above the rotating chuck 1 5 2. The resist scanning arm 1 9 2 is installed on the bottom plate 1 50 of the device and faces upward. One direction (Y direction). The upper end of the vertical support member 1 9 6 that can be moved horizontally on the laid rail 1 9 4 is in the Y direction (not shown). The moving mechanism and the vertical support member 196 can move in the body direction in the body. In addition, the photoresist nozzle scanning arm 192 is attached to the photoresist nozzle waiting section 190 to selectively install the photoresist nozzle. 1 8 6 can also be moved in the X direction at right angles to the Y direction, and also in the X direction by an X-direction drive mechanism (not shown). A photoresist is applied to the photoresist coating unit (C ◦ T). For coating, first, the photoresist nozzle scanning arm 1 9 2 moves to the X direction and moves to a position corresponding to the photoresist nozzle 1 8 6 used, moves to the upper part of the figure in the Y direction and installs the used light. Resist nozzle 1 8 6. Attach a suitable photoresist nozzle. At 186 o'clock, the photoresist nozzle scanning arm 19 2 moves to the lower part of the figure in the Y direction and moves above the wafer W to a proper position near its center. On the one hand, the wafer W is rotated through a motor not shown in the figure. From the photoresist nozzle 1 8 6 stopped at the above position, the diluted liquid is first dropped to the size of this paper. The China S standard (CNS) is applied. A4 specifications (210X 297).-1 (Please read the notes on the back before filling out this page) • Binding and binding. Printed by the Consumers ’Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 __, __ V. Invention Explanation (23) on the rotating wafer W. This diluent is used for the surface of the wafer w familiar with the photoresist material. The diluent dripped on the surface of the wafer W is instantaneously extended to the outside in the radial direction of the wafer W via the centrifugal force of the wafer W, and gradually covers the entire surface of the wafer W. Excess diluent is fly to the outside of wafer W by centrifugal force, and is recovered through cup CP.

Then, the photoresist solution was dropped from the photoresist nozzle 186 onto the surface of the wafer W. The dropped photoresist solution is at the same lambda as the above-mentioned diluent, and instantly spreads to the outside of the wafer W in the radial direction via the centrifugal force of the wafer W, gradually covering the entire surface of the wafer W. The excess photoresist solution was flying out of the wafer W with centrifugal force, and was recovered through the cup CP. The photoresist solution covering the surface of the wafer W is dried instantaneously through the airflow causing the rotation of the wafer W and the airflow flowing for drying. When the dripping of the photoresist solution is completed, the photoresist nozzle scanning arm 1 9 2 moves to the upper part of the figure in the Y direction and returns to the photoresist nozzle waiting portion 1 900. At the same time, the nozzle scanning arm 2 2 is washed. 0 moves to the upper part of the figure in the Y direction, and stops immediately when it touches the upper part of the peripheral edge of the wafer W. The cleaning nozzle scanning arm 2 2 0 is used to remove a photoresist film thickly formed on the peripheral edge portion of the wafer W. A washing nozzle 2 2 2 is installed at the front end of the washing nozzle scanning arm 2 2 0, and a dilution liquid is discharged from the washing nozzle 2 2 2. The diluted solution discharged from the washing nozzle 2 2 2 is formed by dissolving a photoresist film in a thick film shape on the peripheral edge portion of the wafer W and removing it. As mentioned above, the size of each paper coated with diluent, photoresist, and washed is subject to Chinese National Standard (CNS) A4 (210X 297 mm). 26-(Read the notes on the back first (Fill in this page again.)

1. 1T printed by the Central Standards Bureau of the Ministry of Economic Affairs, M Industrial and Consumer Cooperatives A7 B7_. .__, V. Description of the invention (24) The process of formation has been completed after consideration. At the end of the forming process, the wafer W with a photoresist film formed on the surface is sequentially transported to the mesial surface side, and is simultaneously contained in the wafer cassette c R. Thereafter, when the fetched number of the formed wafers W contained in the wafer cassette CR becomes, for example, a predetermined number of 25, the formed wafers W are transported for each wafer cassette CR housed therein Instead, it is set in the film thickness measuring device 'and the film thickness is measured in this device. > However, as described above, since a chemically amplified photoresist is used as the photoresist film, the film thickness data changes with the passage of time after formation. Therefore, if the photoresist is formed on the wafer W, If the time until the film thickness is measured after that is too long, the film thickness 値 of the above-mentioned film thickness measuring device becomes incorrect. In particular, when each wafer cassette c is transported and the film thickness is to be measured in a certain batch unit, for example, the film thickness 値 of the first wafer W and the film thickness 最后 of the last wafer W are measured. A considerable phase difference will occur in the measurement results. As described above, in this embodiment, the film thickness 値 is corrected by the following method. Fig. 15A shows a schematic configuration of a film thickness measuring device to which this method is applied. As shown in FIG. 15A, the film thickness measuring device is composed of a detection unit 101, a CPU 102, a display unit 103, and a memory device 104. A sample (wafer W) for measuring the film thickness is fixed to the arrangement. A sample table 105 near the detection section 101. The detection unit 101 touches the sample (wafer W is formed) with light and detects the reflected light. c PU 1 0 2 implements the instructions for the detection section 101, and calculates the film thickness according to the signal from the detection section 1. The Chinese national standard (CNS) A4 specification (210X29 · / mm) is applied to the paper size of the memory paper. ) ~. 27-~~ • ~》 必 -r in nn I -r ··-----Aw Γ— taxi 《一 I ^^ 1 »km mm 一 OJ --- 1- —M · (read first (Please read the notes on the back and fill in this page.) In the Ministry of Economic Affairs * Standards Bureau, Consumers Cooperatives, printed A7 _ _ B7, 'V. Description of the invention (25) Writing or reading of data between 1 0 4 , Correction of film thickness 値, instructions for display section 103, etc. The display unit 103 displays various parameters or data such as the results of measurement of film thickness or conditions during measurement. The memory device 10 4 stores data related to changes in the film thickness of the chemically amplified photoresist film formed on the wafer W as a function of elapsed time, as shown in FIG. 15B. The thickness of the photoresist film is measured via, for example, the following principle. As shown in FIG. 16, when light is emitted from the light-emitting portion 1 15 a of the sensor 1 15, the light enters the photoresist film R at an angle of incidence 0 to the surface of the wafer W :. When light enters the photoresist film R from the air, the light is refracted at the interface R 1. When the refraction angle at this time is A and the refractive index of the photoresist film is η, the following relationship is established between the incident angle α, the refraction angle / S, and the refractive index η. .n = sina / sin / 3 Then, once the light entering the photoresist film advances inside the photoresist film R, it is reflected at the interface R 2 with the wafer W. The reflected light travels inside the photoresist film R toward the interface R 1 and is refracted when passing through the interface R 1 and proceeds in the air at an incident angle α, and the light receiving part 1 1 5 of the detector 1 1 5 b capture. As described above, the light emitted from the light-emitting portion 1 1 5 a of the detector 1 1 5 passes through the photoresist film R, is reflected at the interface R 2, and then passes through the air to be detected by the light-receiving portion of the sensor 1 1 5. The path up to 11 5 b capture is shown in Figure 16 ', and becomes symmetrical to the normal line shown by the dotted line. It can be seen from the figure 16 that the number of the film thickness d of the photoresist film R is below the paper size applicable to the Chinese Gardener Standard (CNS) Λ4 specification (210X 297 mm) -28--II--«I --8 ....... ^ 1—II n. (Xu Xianwen read the notes on the back before filling in this page)

, 1T • PM B7 Printed by Bei Gongxiao Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. The invention description (.26) is given. d = l / 2tan / 3 and ′, since the above-mentioned relationship of n = s i ηα / 8 i n is established, d 値 is given as d = l s i τν a / 2 (n2-s i η2〇;) 1/2. Therefore, 'α and n 値 are known', so 1 値 can be detected by the detector 1 1 5 to obtain the film thickness d 値. In addition, when a chemically amplified photoresist material is used to form a photoresist film, the reason why the film thickness measurement 値 changes with the passage of time since its formation is based on the fact that the film thickness d is obtained in accordance with the above principle. Therefore, it is considered that the refractive index η of the photoresist film R changes with the elapse of time since the formation. The data stored in the memory device 104 is collected as described below. That is, about one to several wafers W are used as samples for preliminary testing, and a photoresist film is formed on the surface using the photoresist coating device under the same conditions as the product. The film thickness is measured by using a film thickness measuring device after a certain period of time, and the measurement results are used to collect information on the change in film thickness of the chemically amplified photoresist film formed on the substrate as a function of elapsed time. Figure 18 It is a graph showing the relationship between the film thickness 値 collected in this way and the elapsed time. Figure 19 is enlarged to 0 ～ 7 of the chart in Figure 18 (read the precautions on the back of the board before filling in this page). Binding. Order · This paper size applies the Chinese National Standard (CNS) Α4 specification (210X29 * 7 mm) -29-Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs ^ A7 __ ^ _ B7___, Part of the (27) hours of the invention description. The black dots in Fig. 19 are those that actually obtained the data obtained by measuring the film thickness, and the dashed lines in Fig. 19 are curves approximated by these actual measurements. Examples of the approximation method include a least square method. Hereinafter, a method for evaluating the film thickness of the device according to FIG. 17 will be described. For example, a wafer cassette CR containing 25 wafers W formed every second to form a photoresist film is transported from the coating development processing system side to the film thickness measuring device side. Then, one wafer cassette CR The wafers W are taken out one by one and set in a film thickness measuring device (step 801) to measure the film thickness (step 802). According to the relationship between the measured film thickness 値 and the elapsed time, obtain the film thickness 变动 which changes with the elapsed time (hereinafter, this film thickness will be referred to as “fluctuation”). The change is removed or added and corrected to obtain the correct film thickness (step 803). As described above, according to this embodiment, since the film thickness of the chemically amplified photoresist film to be formed on the substrate to be processed is corrected according to the data related to the change in the elapsed time of the film thickness of the same photoresist film Therefore, even when a chemically amplified photoresist is used, the film thickness can be accurately evaluated regardless of the elapsed time. Hereinafter, other embodiments of the present invention will be described. In this example, the device for measuring the film thickness is used as part of the coating and development process and assembled inside it to be linearized, and the allowable range of the film thickness is specified in advance according to the data to determine whether the film thickness 修正 corrected according to the data is within Outside the allowable range, the paper size of the paper device with an alarm device that emits an alarm when it is outside the allowable range applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) _ 3〇- '~ -----, 1-- -'「Install ------ Order ----- // 1, (Read the precautions on the back and fill in this page first) A7 B7 Printed by the Consumer Standards Cooperative of the Central Standards Bureau of Didi Ministry 5. Description of the Invention Except for the configuration (28), it is a device having the same configuration as that used in the first embodiment. In this embodiment, the film thickness measuring device is disposed near the peripheral exposure device 1 2 8 in FIG. 10. From the buffer cassettes BR accommodated in the wafer that has completed the formation process of the photoresist film, one by one, the wafer carrier 1 2 6 is set on the sample table of the film thickness measuring device to measure the formed crystals. The thickness of the photoresist film on the circle. At this time, it is the same as the first embodiment. As the first wafer has been formed, and the second, third, and twenty-fifth wafers become more and more, the film thickness measurement period deviates back and forth, and the variation in film thickness becomes larger. Therefore, from the preliminary test, The result is based on the data obtained through the correction of the film thickness measurement, so that the correct film thickness can be grasped. In this implementation, the results of the preliminary test stipulate that the film thickness of the chemically amplified photoresist film is related to the change in elapsed time. The allowable range of the film thickness 値 after the correction of the data determines whether the corrected film thickness 在 is outside the allowable range, and if it is outside the range, it will constitute an alarm. Therefore, any abnormality in the process of forming the photoresist film will When the film thickness is out of the above range, an abnormal situation can be quickly detected. In the above-mentioned embodiment, a case where a chemically amplified photoresist is applied to a wafer is exemplified. However, the present invention is not only a wafer but also a wafer. It can be applied to other substrates such as LCDs. As described above, according to the above-mentioned film thickness evaluation method, the film thickness of the chemically amplified photoresist film formed on the substrate to be processed is based on the same photoresist film. The film thickness is a structure that corrects the data related to the change of elapsed time, so that the correct film thickness can be grasped regardless of the elapsed time. (Read the precautions on the back before filling this page) -Package, ιτ This paper size Applicable to China National Standard (CNS) A4 specification (210X297mm.) _ 31 A7 B7 Buyers and Consumers Cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs. Printed by the agency V. Invention Description (29) In addition, according to the formed on the substrate being processed The film thickness of chemical amplification type photoresist film is corrected based on the information related to the change of elapsed time. The film is judged whether it is outside the allowable range specified in advance according to the above data. The alarm, so that the abnormality of the formed photoresist film can be accurately and quickly detected. In addition, since the film thickness of the chemically amplified photoresist film formed on the substrate to be processed is measured, and the data used for the correction is compensated according to the film thickness 値 obtained from the measurement, it can accurately be used regardless of the elapsed time. Grasp the film thickness. Since the evaluation device is configured in the processing device, the accurate film thickness can be grasped more quickly, and the substrate can be prevented from being attached to the substrate. Since it is determined whether the film thickness is within an allowable range, it is possible to accurately and quickly know that the formed photoresist film is abnormal, and to prevent particles from adhering to the substrate to be processed. Since a mechanism for compensating the memory data is provided according to the measured film thickness, the data can be compensated on time, and particles can be prevented from being attached to the substrate to be processed. When the photoresist film thickness is measured as described above, the thickness of the photoresist film is adjusted by the rotation chuck rotation control section 1 8 4 according to the measurement film thickness, and the rotation speed of the rotation chuck 1 5 2 can be adjusted. (Brief description of the drawings) Figure 1 shows the coating development processing system of the embodiment of the present invention (read the precautions on the back and then fill out this page). ·· r This paper size applies Chinese national standards (CNS) A4 specification (210X297 mm) -32 · Printed on the A7 ___B7__ of the M Industrial Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy, V. Description of the invention (30) An oblique view of the appearance. Fig. 2 is an explanatory diagram showing the configuration of a photoresist coating apparatus incorporated in the first coating processing system. Fig. 3 is an explanatory view showing a side of a device for measuring a film thickness of a photoresist film according to an example of the present invention. Fig. 4 is a perspective view showing an apparatus for measuring a film thickness of a photoresist film according to an example of the present invention. Fig. 5 is a perspective view showing a device for measuring i-thickness of a photoresist film in another example. Fig. 6 is a cross-sectional view of a film formed when a photoresist film is formed on a wafer using the coating development processing system of Fig. 1; Fig. 7 is a cross-sectional view showing a film formed when a photoresist film is formed on a wafer using the coating development processing system of Fig. 1; Fig. 8 is a cross-sectional view of a film formed when a photoresist film is formed on a wafer using the coating development processing system of Fig. 1; Fig. 9 is a cross-sectional view of a film formed when a photoresist film is formed on a wafer using the coating development processing system of Fig. 1; Fig. 10 is a plan view showing the overall configuration of a coating development processing system including the photoresist coating device of the present invention. Fig. 11 is a rear view showing the overall configuration of a coating development processing system including the photoresist coating device of the present invention. Fig. 12 is a front view showing the overall configuration of a coating development processing system including the photoresist coating device of the present invention. Figure 13 shows the overall composition of the photoresist coating device (COT). The paper size is applicable to the Chinese Prisoner's Standard (CNS) A4 specification (210X297 mm) -33----- ^-i-- 乂,; 1 Pack ------ Order ----- (Please read the notes on the back before filling the% page) A7 B7 V. Brief description of the invention (). FIG. 14 is a plan view showing a photoresist coating device (C Ο T)

It is a schematic configuration diagram showing a thick device used in the photoresist film evaluation method of the present invention. Fig. 15B is a diagram showing the information stored in the RAM shown in Fig. 5A. Fig. 16 is an & large diagram showing a photoresist-coated wafer W cross-section. Fig. 17 is a schematic diagram showing a procedure for implementing the film thickness evaluation method of the present invention. Fig. 18 is a graph showing the relationship between the film thickness 値 and the elapsed time as a curve. Figure 19 is a graph showing the relationship between film thickness and elapsed time. (Description of Symbols) 1 Coating development processing system 2 Mounting section 3, 6 Transport arm 4 Transport mechanism 5 Transport path 7, '8 Transport path 9 Substrate mounting section This paper applies the Chinese National Standard (CNS) Λ4 Specifications (210X 297mm) -34-A7 B7 V. Description of the invention (32) 10 Brush cleaning device 11 Water cleaning device Printed by the Central Bureau of Standards and Quarantine, Shellfish Consumer Cooperative 1 1 Hydrophobic treatment device 1 3 1 6 Cooling device 1 4 Photoresist coating device 1 5 > 1 9 Heating device 1 7 Imaging processing device 1 8 Measuring film thickness device 2 4 Control device 2 5 Drain tube 2 6 Drain tank 3 1 Nozzle 4 1 Photoresist liquid supply tube 4 3 Supply mechanism 4 5 Solvent tube 5 2 Temperature and humidity Rentian m Complete device 6 0 Lifting column 7 0 Photoresist film 1 0 1 Detection unit 1 0 2 CPU 1 0 3 Display 1 0 4 Memory device 1 0 5 Sample stand 1 1 0 Cassette station (read the precautions on the back before filling this page) -pack_

、 1T This paper size is applicable to Chinese National Standard (CNS) A4 specification (210 X 297 mm) -35-V. Description of invention (33) A7 B7 Jingfan Department of the Central Standards Bureau, Consumer Consumption Cooperative, India 1 1 2 Processing Station 1 1 4 Interface part 1 2 4 Wafer conveyance mechanism 1 2 6 Wafer conveyance body 1 2 8 Peripheral exposure device 1 5 2 Rotary chuck 1 5 4 Drive motor 1 5 8 Flange member 1 6 0 Lifting drive device 1 8 6 Photoresist Nozzle 1 9 2 Photoresist Nozzle Scanning Arm 2 2 0 Wash Nozzle Scanning Arm 2 2 2 Wash Nozzle W Wafer C Cassette N Photoresist Liquid Discharge Nozzle R Photoresist Liquid Supply Source S Solvent Nozzle T Solvent Supply source CR pickup cassette Β R buffer cassette (please read the precautions on the back before filling this page).

、 1T This paper size is applicable to China National Standard (CNS) A4 specification (210 × 297 mm) -36-

Claims (1)

Patent application scope A8 B8 C8 D8 1. A photoresist treatment method, which belongs to a photoresist treatment method, is characterized by having a first process of setting a substrate to be processed at a predetermined temperature, and setting the substrate at a predetermined temperature. A photoresist solution on one side of the substrate to be processed is coated on the substrate and a photoresist film is formed on the second process, and the above-mentioned basic process of heating the photoresist film is formed, and The process of cooling the substrate to be processed to the fourth process, and the process of measuring the film thickness of the photoresist film on the substrate to be processed between the third process and the fourth process in the photoresist. • 2 • The photoresist described in item 1 of the scope of the patent application, which includes the results of measuring the film thickness of the photoresist film, the humidity in the photoresist coating device of the photoresist treatment system, and the photoresist system. On the light and rotating sides, the third agent processing system processing method of the plate on the substrate will be described, and the rotation speed of the substrate to be processed in the photoresist coating device described above is adjusted. Photoresist liquid temperature at least one process is (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 3. As described in item 2 of the scope of patent application; 4 ^ \ Resist Wm Wherein, the above adjustment process includes: the upper limit of the first allowed range of the photoresist film measurement processing substrate is thick; when the lower limit of the second allowed range of the plate is thin, change the humidity and A process in which at least one of the substrates to be processed of the photoresist coating device changes at least one of the temperature of the * solution of the substrate in the first process. Processing method, film thickness, temperature and photoresistance at the rotation speed and photoresist applied on the above-mentioned base resist. The paper size applies the Chinese National Standard (CNS) M specification (210X297 mm)-37. Consumption by the Central Bureau of Standards of the Ministry of Economic Affairs Cooperative printed A8 B8 C8 D8. I 6. Application for patent scope 4. The photoresist treatment method as described in item 2 of the patent application scope, wherein the step of measuring the film thickness is in the transport device of the photoresist treatment system Performed while holding the substrate to be processed. 5. The photoresist processing method according to item 2 of the scope of the patent application, wherein the step of measuring the film thickness is performed by a substrate processing inspector who holds the photoresist processing system. 6. The photoresist processing method according to item 1 of the scope of the patent application, wherein the step of measuring the film thickness is performed while the substrate of the photoresist processing system is held by the processing device. 7. The photoresist processing method according to item 1 of the scope of the patent application, wherein the step of measuring the film thickness is performed by an & processing substrate holder for inspection contained in the photoresist processing system. 8. A photoresist processing method, which belongs to a photoresist processing method of a photoresist processing system, and is characterized by having a first process of heating a substrate to be processed to a first temperature, and setting the first temperature to the first temperature. The second process of coating the photoresist liquid on the substrate while rotating the substrate to be processed and forming the photoresist film on the substrate is a second step of heating the third process of the substrate to be processed formed by the photoresist film. Process, and the fourth process of cooling the heated slab to the second temperature after the heating, and after the fourth process, the photoresist film on the processed substrate is measured in the photoresist processing system. Film thickness process. This paper size applies to China National Standard (CNS) A4 specification (210X297 cm) —- 38-a ---- ^ ----- i— Λ'pack-I (please read the precautions on the back before filling in this Page) Order. Lr. 8 8 8 8 ABCD VI. Application for patent scope 9. The photoresist treatment method described in item 8 of the scope of application for patent, which has the adjustment according to the result of measuring the film thickness of the photoresist film The humidity in the photoresist coating device, the rotation speed of the substrate to be processed in the photoresist coating device of the photoresist processing system, the first temperature of the substrate to be processed in the first process, and the temperature of the photoresist liquid. At least one of them. 1 〇. The photoresist treatment method described in item 9 of the scope of the patent application, wherein the above adjustment process includes: measuring the film thickness of the photoresist film, and the ratio of the first allowed range on the substrate to be processed. When the upper limit is thicker and the lower limit is lower than the second allowable range, change at least one of the humidity in the photoresist coating device of the photoresist processing system and the rotation speed of the substrate to be processed in the photoresist coating device. At the same time, at least one of the predetermined temperature of the substrate to be processed and the temperature of the photoresist liquid in the first process is changed. 1 1. The photoresist processing method according to item 8 of the patent application, wherein the step of measuring the film thickness is performed while the transporting device of the photoresist processing system is holding the substrate to be processed. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) 1 2. The photoresist treatment method described in item 8 of the scope of patent application, in which the above steps of measuring the film thickness are For those who hold the substrate to be processed for inspection in the photoresist processing system. 1 3. The photoresist treatment method according to item 12 of the scope of the patent application, further comprising the step of washing the photoresist film on the photoresist film of the substrate to be processed for inspection after the photoresist coating device has been washed. 1 4. A photoresist processing system, comprising: a photoresist coating device for coating a photoresist liquid on a substrate while rotating a substrate to be processed while forming a photoresist film on the substrate, And this paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) " " " -39-: Printed by the Consumer Cooperatives of the Central Standardization Bureau of the Ministry of Economic Affairs A heating device, a conveying device holding and processing the substrate to be processed, and a film thickness measuring device for measuring a film thickness of a photoresist film formed on the substrate to be processed and provided above a loading inlet of the heating device Make up. 15 photoresist processing systems, comprising: a photoresist coating device for coating a photoresist liquid on a substrate while rotating a substrate to be processed while forming a photoresist film on the substrate, and A plurality of heating devices for heating the substrate to be processed to a first temperature, a plurality of temperature adjusting devices having a function of cooling at least the substrate to be processed to a second temperature, and a transport device that holds and transports the substrate to be processed, and It is provided above at least one of the inlet of the heating device and the temperature adjustment device, and the heating device and the temperature adjustment device are multi-layered to measure the film thickness of the photoresist film formed on the substrate to be processed. Film thickness device. 16. A photoresist processing system, which is characterized in that: a photoresist liquid is coated on a substrate while a substrate to be processed is rotated, and a photoresist film is formed on the substrate. And a heating device that heats the substrate to be processed to the first temperature, a transporting device that holds and transports the substrate to be processed, and measures the film thickness of a photoresist film formed on the substrate to be processed and is provided on the substrate The paper thickness measurement above the transport path of the transport device is based on the Chinese paper standard (CNS) A4 size (210X29? Mm) ~~ -40- (Please read the precautions on the back before filling this page) Economy A8 B8 C8 D8 printed by employees' cooperatives of the Ministry of Standards and Technology, and the scope of patent application. 1 7. —A kind of film thickness evaluation method, which is characterized by: a process of memorizing data related to a change in film thickness of a chemically amplified photoresist film formed on the substrate to be processed over time, and measuring the formation of The process of the film thickness of the chemically amplified photoresist film on the substrate to be processed as described above, and the process of correcting the measured thickness of the film thickness according to the data of the memory described above. 18. The method for evaluating film thickness as described in item 17 of the scope of patent application, which includes the process of issuing a warning when the above-mentioned corrected film thickness is outside the above-mentioned allowable range. 19. The method for evaluating the film thickness as described in item 17 of the scope of the patent application, which includes a process of compensating the memorized data according to the film thickness 测定 determined above. Twenty types of processing apparatuses are characterized by integrally forming a mechanism for forming a chemically amplified photoresist film on a substrate to be processed, and a film that memorizes the chemically amplified photoresist film formed on the substrate to be processed over time. A mechanism for data related to thickness variation, a mechanism for measuring the film thickness of the chemically amplified photoresist film formed on the substrate to be processed, and a mechanism for correcting the measured thickness of the film thickness in accordance with the memory data . 2 1. The processing device as described in Item 20 of the scope of patent application, which includes determining whether the above-mentioned corrected film thickness is within the allowable range specified in advance. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm). ) -41 、 -β (Please read the precautions on the back before filling this page) A8 B8 C8 D8 6. Institutions outside the scope of patent application, and institutions that issue warnings when the film thickness of the above correction is outside the above-mentioned allowable range. 2 2. The processing device as described in Item 20 of the scope of patent application, which includes a mechanism for compensating the above-mentioned memorized data according to the measured film thickness 値 (please read the precautions on the back before filling this page). * 1T line _ Printed on the paper by the Employees' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. The paper size applies to the Chinese National Standard (CNS) A4 specification (210 × 297 mm)