US6165311A
(en)
*
|
1991-06-27 |
2000-12-26 |
Applied Materials, Inc. |
Inductively coupled RF plasma reactor having an overhead solenoidal antenna
|
JP3365067B2
(ja)
*
|
1994-02-10 |
2003-01-08 |
ソニー株式会社 |
プラズマ装置およびこれを用いたプラズマ処理方法
|
US5874704A
(en)
*
|
1995-06-30 |
1999-02-23 |
Lam Research Corporation |
Low inductance large area coil for an inductively coupled plasma source
|
US5653811A
(en)
*
|
1995-07-19 |
1997-08-05 |
Chan; Chung |
System for the plasma treatment of large area substrates
|
US5759280A
(en)
*
|
1996-06-10 |
1998-06-02 |
Lam Research Corporation |
Inductively coupled source for deriving substantially uniform plasma flux
|
US6000360A
(en)
*
|
1996-07-03 |
1999-12-14 |
Tokyo Electron Limited |
Plasma processing apparatus
|
TW349234B
(en)
*
|
1996-07-15 |
1999-01-01 |
Applied Materials Inc |
RF plasma reactor with hybrid conductor and multi-radius dome ceiling
|
US6534922B2
(en)
|
1996-09-27 |
2003-03-18 |
Surface Technology Systems, Plc |
Plasma processing apparatus
|
DE69736081T2
(de)
*
|
1996-09-27 |
2007-01-11 |
Surface Technoloy Systems Plc |
Plasmabearbeitungsvorrichtung
|
US5800621A
(en)
*
|
1997-02-10 |
1998-09-01 |
Applied Materials, Inc. |
Plasma source for HDP-CVD chamber
|
TW376547B
(en)
*
|
1997-03-27 |
1999-12-11 |
Matsushita Electric Ind Co Ltd |
Method and apparatus for plasma processing
|
US6210539B1
(en)
|
1997-05-14 |
2001-04-03 |
Applied Materials, Inc. |
Method and apparatus for producing a uniform density plasma above a substrate
|
US6579426B1
(en)
|
1997-05-16 |
2003-06-17 |
Applied Materials, Inc. |
Use of variable impedance to control coil sputter distribution
|
US6652717B1
(en)
|
1997-05-16 |
2003-11-25 |
Applied Materials, Inc. |
Use of variable impedance to control coil sputter distribution
|
US6077402A
(en)
*
|
1997-05-16 |
2000-06-20 |
Applied Materials, Inc. |
Central coil design for ionized metal plasma deposition
|
US6361661B2
(en)
|
1997-05-16 |
2002-03-26 |
Applies Materials, Inc. |
Hybrid coil design for ionized deposition
|
US6345588B1
(en)
|
1997-08-07 |
2002-02-12 |
Applied Materials, Inc. |
Use of variable RF generator to control coil voltage distribution
|
US6216632B1
(en)
*
|
1998-01-29 |
2001-04-17 |
Anelva Corporation |
Plasma processing system
|
US5944942A
(en)
*
|
1998-03-04 |
1999-08-31 |
Ogle; John Seldon |
Varying multipole plasma source
|
US6254738B1
(en)
*
|
1998-03-31 |
2001-07-03 |
Applied Materials, Inc. |
Use of variable impedance having rotating core to control coil sputter distribution
|
US6146508A
(en)
*
|
1998-04-22 |
2000-11-14 |
Applied Materials, Inc. |
Sputtering method and apparatus with small diameter RF coil
|
US6204607B1
(en)
*
|
1998-05-28 |
2001-03-20 |
Applied Komatsu Technology, Inc. |
Plasma source with multiple magnetic flux sources each having a ferromagnetic core
|
TW434636B
(en)
|
1998-07-13 |
2001-05-16 |
Applied Komatsu Technology Inc |
RF matching network with distributed outputs
|
US6132575A
(en)
*
|
1998-09-28 |
2000-10-17 |
Alcatel |
Magnetron reactor for providing a high density, inductively coupled plasma source for sputtering metal and dielectric films
|
US6319355B1
(en)
|
1999-06-30 |
2001-11-20 |
Lam Research Corporation |
Plasma processor with coil responsive to variable amplitude rf envelope
|
JP2001023959A
(ja)
*
|
1999-07-05 |
2001-01-26 |
Mitsubishi Electric Corp |
プラズマ処理装置
|
US6244210B1
(en)
*
|
1999-10-29 |
2001-06-12 |
Advanced Micro Devices, Inc. |
Strength coil for ionized copper plasma deposition
|
EP1230664B1
(en)
*
|
1999-11-15 |
2008-05-07 |
Lam Research Corporation |
Processing systems
|
US6518190B1
(en)
*
|
1999-12-23 |
2003-02-11 |
Applied Materials Inc. |
Plasma reactor with dry clean apparatus and method
|
JP3567855B2
(ja)
*
|
2000-01-20 |
2004-09-22 |
住友電気工業株式会社 |
半導体製造装置用ウェハ保持体
|
TW484187B
(en)
*
|
2000-02-14 |
2002-04-21 |
Tokyo Electron Ltd |
Apparatus and method for plasma treatment
|
US6441555B1
(en)
|
2000-03-31 |
2002-08-27 |
Lam Research Corporation |
Plasma excitation coil
|
JP4677654B2
(ja)
*
|
2000-04-19 |
2011-04-27 |
日本電気株式会社 |
透過型液晶表示装置及びその製造方法
|
TW454429B
(en)
*
|
2000-05-31 |
2001-09-11 |
Nanya Technology Corp |
Plasma generator
|
JP2002008996A
(ja)
*
|
2000-06-23 |
2002-01-11 |
Mitsubishi Heavy Ind Ltd |
給電アンテナ及び給電方法
|
US6632322B1
(en)
|
2000-06-30 |
2003-10-14 |
Lam Research Corporation |
Switched uniformity control
|
US6471830B1
(en)
|
2000-10-03 |
2002-10-29 |
Veeco/Cvc, Inc. |
Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system
|
FR2815176B1
(fr)
*
|
2000-10-11 |
2003-01-10 |
A S K |
Antenne spirale d'emission et/ou reception a coupures
|
US6716303B1
(en)
*
|
2000-10-13 |
2004-04-06 |
Lam Research Corporation |
Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same
|
DE10104613A1
(de)
*
|
2001-02-02 |
2002-08-22 |
Bosch Gmbh Robert |
Plasmaanlage und Verfahren zur Erzeugung einer Funktionsbeschichtung
|
DE10104614A1
(de)
*
|
2001-02-02 |
2002-08-22 |
Bosch Gmbh Robert |
Plasmaanlage und Verfahren zur Erzeugung einer Funktionsbeschichtung
|
JP3591642B2
(ja)
*
|
2001-02-07 |
2004-11-24 |
株式会社日立製作所 |
プラズマ処理装置
|
JP2002237486A
(ja)
*
|
2001-02-08 |
2002-08-23 |
Tokyo Electron Ltd |
プラズマ処理装置およびプラズマ処理方法
|
TW466595B
(en)
*
|
2001-02-20 |
2001-12-01 |
Macronix Int Co Ltd |
Reaction chamber of high density plasma chemical vapor deposition
|
US6583572B2
(en)
|
2001-03-30 |
2003-06-24 |
Lam Research Corporation |
Inductive plasma processor including current sensor for plasma excitation coil
|
US6527912B2
(en)
|
2001-03-30 |
2003-03-04 |
Lam Research Corporation |
Stacked RF excitation coil for inductive plasma processor
|
US7096819B2
(en)
*
|
2001-03-30 |
2006-08-29 |
Lam Research Corporation |
Inductive plasma processor having coil with plural windings and method of controlling plasma density
|
KR200253559Y1
(ko)
*
|
2001-07-30 |
2001-11-22 |
주식회사 플라즈마트 |
회전방향으로 균일한 플라즈마 밀도를 발생시키는유도결합형 플라즈마 발생장치의 안테나구조
|
US7033514B2
(en)
*
|
2001-08-27 |
2006-04-25 |
Micron Technology, Inc. |
Method and apparatus for micromachining using a magnetic field and plasma etching
|
KR100685947B1
(ko)
*
|
2001-09-08 |
2007-02-23 |
엘지.필립스 엘시디 주식회사 |
액정표시소자의 제조방법
|
WO2003030239A1
(fr)
*
|
2001-09-28 |
2003-04-10 |
Sumitomo Precision Products Co., Ltd. |
Procede de gravure de substrat de silicium et appareil de gravure
|
US20030082920A1
(en)
*
|
2001-11-01 |
2003-05-01 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Chamber-reversed dry etching
|
US6597117B2
(en)
*
|
2001-11-30 |
2003-07-22 |
Samsung Austin Semiconductor, L.P. |
Plasma coil
|
US20030168012A1
(en)
*
|
2002-03-07 |
2003-09-11 |
Hitoshi Tamura |
Plasma processing device and plasma processing method
|
FR2839242B1
(fr)
*
|
2002-04-25 |
2004-10-15 |
Rasar Holding N V |
Procede pour generer un plasma froid destine a la sterilisation de milieu gazeux et dispositif pour mettre en oeuvre ce procede
|
JP3820188B2
(ja)
*
|
2002-06-19 |
2006-09-13 |
三菱重工業株式会社 |
プラズマ処理装置及びプラズマ処理方法
|
KR100486724B1
(ko)
*
|
2002-10-15 |
2005-05-03 |
삼성전자주식회사 |
사행 코일 안테나를 구비한 유도결합 플라즈마 발생장치
|
TWI391035B
(zh)
*
|
2002-12-16 |
2013-03-21 |
Japan Science & Tech Agency |
Plasma generation device, plasma control method and substrate manufacturing method (1)
|
US6876155B2
(en)
|
2002-12-31 |
2005-04-05 |
Lam Research Corporation |
Plasma processor apparatus and method, and antenna
|
KR100964398B1
(ko)
*
|
2003-01-03 |
2010-06-17 |
삼성전자주식회사 |
유도결합형 안테나 및 이를 채용한 플라즈마 처리장치
|
US20040163595A1
(en)
*
|
2003-02-26 |
2004-08-26 |
Manabu Edamura |
Plasma processing apparatus
|
KR100513163B1
(ko)
*
|
2003-06-18 |
2005-09-08 |
삼성전자주식회사 |
Icp 안테나 및 이를 사용하는 플라즈마 발생장치
|
US20050205210A1
(en)
*
|
2004-01-06 |
2005-09-22 |
Devine Daniel J |
Advanced multi-pressure workpiece processing
|
US20050205211A1
(en)
*
|
2004-03-22 |
2005-09-22 |
Vikram Singh |
Plasma immersion ion implantion apparatus and method
|
US7400096B1
(en)
|
2004-07-19 |
2008-07-15 |
The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration |
Large area plasma source
|
US7962918B2
(en)
*
|
2004-08-03 |
2011-06-14 |
Microsoft Corporation |
System and method for controlling inter-application association through contextual policy control
|
US7305935B1
(en)
|
2004-08-25 |
2007-12-11 |
The United States Of America As Represented By The Administration Of Nasa |
Slotted antenna waveguide plasma source
|
US20080124254A1
(en)
*
|
2006-05-22 |
2008-05-29 |
Dae-Kyu Choi |
Inductively Coupled Plasma Reactor
|
US20080078506A1
(en)
*
|
2006-09-29 |
2008-04-03 |
Zyvex Corporation |
RF Coil Plasma Generation
|
US9137884B2
(en)
*
|
2006-11-29 |
2015-09-15 |
Lam Research Corporation |
Apparatus and method for plasma processing
|
CN101640091B
(zh)
*
|
2008-07-28 |
2011-06-15 |
北京北方微电子基地设备工艺研究中心有限责任公司 |
电感耦合线圈及采用该电感耦合线圈的等离子体处理装置
|
KR101143742B1
(ko)
|
2008-10-27 |
2012-05-11 |
도쿄엘렉트론가부시키가이샤 |
유도 결합 플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체
|
KR101037917B1
(ko)
|
2008-11-03 |
2011-05-31 |
주식회사 유진테크 |
플라즈마 처리장치 및 플라즈마 안테나
|
JP5479867B2
(ja)
*
|
2009-01-14 |
2014-04-23 |
東京エレクトロン株式会社 |
誘導結合プラズマ処理装置
|
US7994724B2
(en)
*
|
2009-03-27 |
2011-08-09 |
Ecole Polytechnique |
Inductive plasma applicator
|
WO2011041087A2
(en)
*
|
2009-09-29 |
2011-04-07 |
Applied Materials, Inc. |
Inductively-coupled plasma (icp) resonant source element
|
JP5554047B2
(ja)
*
|
2009-10-27 |
2014-07-23 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
JP2011258622A
(ja)
*
|
2010-06-07 |
2011-12-22 |
Tokyo Electron Ltd |
プラズマ処理装置及びその誘電体窓構造
|
JP5800532B2
(ja)
*
|
2011-03-03 |
2015-10-28 |
東京エレクトロン株式会社 |
プラズマ処理装置及びプラズマ処理方法
|
JP5727281B2
(ja)
|
2011-04-21 |
2015-06-03 |
東京エレクトロン株式会社 |
誘導結合プラズマ処理装置
|
US20130015766A1
(en)
*
|
2011-05-12 |
2013-01-17 |
The George Washington University |
Apparatus for generating mini and micro plasmas and methods of use
|
US20120291955A1
(en)
*
|
2011-05-17 |
2012-11-22 |
Cho Young Kyu |
Large area icp source for plasma application
|
KR101969077B1
(ko)
|
2011-08-18 |
2019-04-15 |
세메스 주식회사 |
플라즈마 안테나 및 이를 이용한 기판 처리 장치
|
US9034143B2
(en)
|
2011-10-05 |
2015-05-19 |
Intevac, Inc. |
Inductive/capacitive hybrid plasma source and system with such chamber
|
JP2016530699A
(ja)
*
|
2013-05-31 |
2016-09-29 |
アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated |
プラズマ処理システムのためのアンテナアレイ構成
|
US20160049279A1
(en)
*
|
2014-08-14 |
2016-02-18 |
Allied Techfinders Co., Ltd. |
Plasma device
|
US10300551B2
(en)
*
|
2016-11-14 |
2019-05-28 |
Matthew Fagan |
Metal analyzing plasma CNC cutting machine and associated methods
|
US10854448B2
(en)
|
2017-01-31 |
2020-12-01 |
Tohoku University |
Plasma generating device, plasma sputtering device, and plasma sputtering method
|
KR102015381B1
(ko)
*
|
2017-03-29 |
2019-08-29 |
세메스 주식회사 |
플라즈마 발생 유닛 및 이를 포함하는 기판 처리 장치
|
CN108017123A
(zh)
*
|
2017-12-20 |
2018-05-11 |
广西加加汇软件技术有限公司 |
多变螺旋涡旋电场系统装置
|