TW236711B - - Google Patents

Info

Publication number
TW236711B
TW236711B TW83101957A TW83101957A TW236711B TW 236711 B TW236711 B TW 236711B TW 83101957 A TW83101957 A TW 83101957A TW 83101957 A TW83101957 A TW 83101957A TW 236711 B TW236711 B TW 236711B
Authority
TW
Taiwan
Application number
TW83101957A
Other languages
Chinese (zh)
Inventor
Hongyong Zhang
Toru Takayama
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Priority to TW83101957A priority Critical patent/TW236711B/zh
Application granted granted Critical
Publication of TW236711B publication Critical patent/TW236711B/zh

Links

TW83101957A 1994-03-07 1994-03-07 TW236711B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83101957A TW236711B (en) 1994-03-07 1994-03-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83101957A TW236711B (en) 1994-03-07 1994-03-07

Publications (1)

Publication Number Publication Date
TW236711B true TW236711B (en) 1994-12-21

Family

ID=51349046

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83101957A TW236711B (en) 1994-03-07 1994-03-07

Country Status (1)

Country Link
TW (1) TW236711B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6071764A (en) * 1993-07-27 2000-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6071764A (en) * 1993-07-27 2000-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
US6077758A (en) * 1993-07-27 2000-06-20 Semiconductor Energy Laboratory Co., Ltd. Method of crystallizing thin films when manufacturing semiconductor devices
US6455401B1 (en) 1993-07-27 2002-09-24 Semiconductor Energy Laboratory Co., Ltd. Methodology for producing thin film semiconductor devices by crystallizing an amorphous film with crystallization promoting material, patterning the crystallized film, and then increasing the crystallinity with an irradiation
US6924213B2 (en) 1993-07-27 2005-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
US7056775B2 (en) 1993-07-27 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same

Similar Documents

Publication Publication Date Title
BR9508234A (en)
DK0677466T3 (en)
EP0666525A3 (en)
BRPI9507160A (en)
TW257665B (en)
IN188845B (en)
TW278223B (en)
TW285808B (en)
EP0666470A3 (en)
TW271417B (en)
EP0665261A3 (en)
TW280809B (en)
TW281771B (en)
DE69535748D1 (en)
TW281623B (en)
ITMI950695V0 (en)
EP0662420A3 (en)
IN189435B (en)
IN177851B (en)
IN190332B (en)
ECSMU940035U (en)
BR7402039U (en)
CN3027196S (en)
EP0665070A3 (en)
EP0786189A4 (en)

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees