TW218054B - - Google Patents
Info
- Publication number
- TW218054B TW218054B TW081107916A TW81107916A TW218054B TW 218054 B TW218054 B TW 218054B TW 081107916 A TW081107916 A TW 081107916A TW 81107916 A TW81107916 A TW 81107916A TW 218054 B TW218054 B TW 218054B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910018117A KR940009648B1 (ko) | 1991-10-15 | 1991-10-15 | 전하결합소자의 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW218054B true TW218054B (zh) | 1993-12-21 |
Family
ID=19321264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW081107916A TW218054B (zh) | 1991-10-15 | 1992-10-06 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5246875A (zh) |
| JP (1) | JPH05226631A (zh) |
| KR (1) | KR940009648B1 (zh) |
| DE (1) | DE4234499C2 (zh) |
| TW (1) | TW218054B (zh) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2910394B2 (ja) * | 1992-03-19 | 1999-06-23 | 日本電気株式会社 | 固体撮像素子およびその製造方法 |
| US5341008A (en) * | 1993-09-21 | 1994-08-23 | Texas Instruments Incorporated | Bulk charge modulated device photocell with lateral charge drain |
| US5384267A (en) * | 1993-10-19 | 1995-01-24 | Texas Instruments Incorporated | Method of forming infrared detector by hydrogen plasma etching to form refractory metal interconnects |
| KR0136933B1 (ko) * | 1994-05-21 | 1998-04-24 | 문정환 | 씨씨디(ccd) 영상소자 및 제조방법 |
| KR0148734B1 (ko) * | 1995-06-22 | 1998-08-01 | 문정환 | 시시디 촬상소자 제조방법 |
| US7072650B2 (en) * | 2000-11-13 | 2006-07-04 | Meshnetworks, Inc. | Ad hoc peer-to-peer mobile radio access system interfaced to the PSTN and cellular networks |
| JP2002190586A (ja) * | 2000-12-22 | 2002-07-05 | Mitsubishi Electric Corp | 固体撮像装置およびその製造方法 |
| JP2002314063A (ja) * | 2001-02-06 | 2002-10-25 | Mitsubishi Electric Corp | Ｃｍｏｓイメージセンサ及びその製造方法 |
| KR100780246B1 (ko) * | 2006-09-26 | 2007-11-27 | 동부일렉트로닉스 주식회사 | 이미지 센서 제조방법 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1595253A (en) * | 1977-01-24 | 1981-08-12 | Hitachi Ltd | Solid-state imaging devices |
| FR2533371B1 (fr) * | 1982-09-21 | 1985-12-13 | Thomson Csf | Structure de grille pour circuit integre comportant des elements du type grille-isolant-semi-conducteur et procede de realisation d'un circuit integre utilisant une telle structure |
| DE3586452T2 (de) * | 1984-10-18 | 1993-03-18 | Matsushita Electronics Corp | Festkoerperbildsensor und verfahren zu seiner herstellung. |
| US4906584A (en) * | 1985-02-25 | 1990-03-06 | Tektronix, Inc. | Fast channel single phase buried channel CCD |
| JPS61216472A (ja) * | 1985-03-22 | 1986-09-26 | Toshiba Corp | 電荷転送装置の製造方法 |
| JPS62124771A (ja) * | 1985-11-25 | 1987-06-06 | Sharp Corp | 固体撮像装置 |
| JPH0316232A (ja) * | 1989-06-14 | 1991-01-24 | Matsushita Electron Corp | 電荷結合素子の製造方法 |
| US5135882A (en) * | 1989-07-31 | 1992-08-04 | Micron Technology, Inc. | Technique for forming high-value inter-nodal coupling resistance for rad-hard applications in a double-poly, salicide process using local interconnect |
-
1991
- 1991-10-15 KR KR1019910018117A patent/KR940009648B1/ko not_active IP Right Cessation
-
1992
- 1992-10-06 TW TW081107916A patent/TW218054B/zh not_active IP Right Cessation
- 1992-10-13 DE DE4234499A patent/DE4234499C2/de not_active Expired - Lifetime
- 1992-10-15 JP JP4301546A patent/JPH05226631A/ja active Pending
- 1992-10-15 US US07/961,476 patent/US5246875A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR940009648B1 (ko) | 1994-10-15 |
| DE4234499A1 (de) | 1993-04-22 |
| DE4234499C2 (de) | 1996-07-11 |
| JPH05226631A (ja) | 1993-09-03 |
| KR930009139A (ko) | 1993-05-22 |
| US5246875A (en) | 1993-09-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |