TW201834132A - Electrostatic chuck device and electrostatic adsorption method which can electrostatically adsorb an object to be held under an atmospheric pressure environment - Google Patents

Electrostatic chuck device and electrostatic adsorption method which can electrostatically adsorb an object to be held under an atmospheric pressure environment Download PDF

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TW201834132A
TW201834132A TW106138573A TW106138573A TW201834132A TW 201834132 A TW201834132 A TW 201834132A TW 106138573 A TW106138573 A TW 106138573A TW 106138573 A TW106138573 A TW 106138573A TW 201834132 A TW201834132 A TW 201834132A
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held
electrostatic chuck
charge
electrode
electrostatic
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TW106138573A
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TWI745481B (en
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松崎栄
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日商迪思科股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15Devices for holding work using magnetic or electric force acting directly on the work
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

An object of the present invention is related to an electrostatic adsorption of an object to be held, such as semiconductors, insulators or others, even under an atmospheric pressure environment. The present invention provides an electrostatic chuck device that electrostatically adsorbs an object to be held under an atmospheric pressure environment. The electrostatic chuck device comprises an electrostatic chuck table including an electrode and a holding surface, and an ionized air supply unit for supplying the ionized air to an exposed surface of the object held by the holding surface, wherein the electrode has a function in that an electric charge is supplied when the object to be held is electrostatically adsorbed, and the ionized air supply unit has charged ions with a polarity opposite to a polarity of a charge supplied to the electrode to be supplied to the exposed surface of the object to be held and maintains the charge on the exposed surface side of the object to be held. The object to be held can be provided with a protective member on one surface thereof, and the object to be held can be electrostatically adsorbed to the holding surface via the protective member at the buildup area. The electrostatic adsorption method of the present invention comprises the steps of holding the object to be held on the holding surface of the electrostatic chuck table having the electrode and the holding surface, supplying charge to the electrode for generating a suction control of electrostatic attraction force, and supplying an ionized air with a polar charge opposite to the polarity of the charge supplying and supplied to the electrode to the exposed surface of the object to be held for maintaining the charge on the exposed surface of the object to be held and assisting the suction control of electrostatic attraction force.

Description

靜電吸盤裝置及靜電吸附方法Electrostatic chuck device and electrostatic adsorption method

[0001] 本發明係關於靜電吸盤裝置及靜電吸附方法。[0001] The present invention relates to an electrostatic chuck device and an electrostatic adsorption method.

[0002] 保持半導體晶圓等的被保持物來進行加工之電漿蝕刻裝置等的加工裝置,係具有靜電吸附該被保持物之靜電吸盤台等的靜電吸盤裝置,被保持物被加工裝置的靜電吸盤裝置固定來進行加工。   [0003] 靜電吸盤裝置係具有電極,與該電極上的介電體(絕緣體)。被保持物隔著該介電體而被載置於電極的上方,之後,該電極被設為所定電位的話,藉由從電極產生的電場(electric field),於被保持物中產生靜電感應或靜電分極。然後,藉由被保持物中的電荷或分極與靜電吸盤裝置的電極之間的庫倫力(靜電力),被保持物被固定於靜電吸盤裝置。   [0004] 庫侖力所致之靜電吸附,係在被保持物是具有自由電子的導體時會產生靜電感應而特別強。另一方面,被保持物是半導體或絕緣體時雖產生靜電分極,但該靜電分極所致之靜電吸引力比較弱。因此,例如將加工裝置內之靜電吸盤裝置的電極設為所定低電位來保持半導體及絕緣體的被保持物時,將加工裝置的內部設為真空而使加工裝置的內部產生電漿,從該電漿對被保持物供給陽離子。   [0005] 於是,於該被保持物的上面側,產生靜電分極。該分極係以於上配置負的電荷,於下配置正的電荷的電偶極子所構成。對靜電吸盤裝置的電極供給低電位的直流電壓時所產生之該被保持物的下面側的靜電分極,也以於上配置負的電荷,於下配置正的電荷的電偶極子所構成。因此,藉由於被保持物的上側所產生的靜電分極來輔助下側的靜電分極,增強庫侖力所致之靜電吸附。   [0006] 此時,即使停止靜電吸盤裝置對電極的供電,吸附力也難以完全消失,所以,剝離被保持物時,需要停止供電之後產生電漿,從該電漿對被保持物的上面(露出面)供給電子,消滅殘留於被保持物的電位。但是,對於為了利用電漿來說,必需將靜電吸盤裝置置於真空環境,在大氣壓環境下無法進行電漿所致之靜電吸附的控制。   [0007] 因此,以於大氣壓環境下也可保持半導體及絕緣體的被保持物之方式,對靜電吸盤裝置所具有之電極的形狀下功夫,開發出可藉由梯度力來保持被保持物的靜電吸盤裝置。又,開發出提升保持面的平坦性,即使停止供電後也可維持吸附力的靜電吸盤裝置。 [先前技術文獻] [專利文獻]   [0008] [專利文獻1] 日本特開2016-51836號公報[0002] Processing devices such as plasma etching devices that hold objects to be held such as semiconductor wafers for processing are electrostatic chuck devices having an electrostatic chuck table such as an electrostatic chuck table that electrostatically adsorbs the objects to be held. The electrostatic chuck device is fixed for processing. [0003] An electrostatic chuck device includes an electrode and a dielectric (insulator) on the electrode. The object to be held is placed above the electrode with the dielectric interposed therebetween. After the electrode is set to a predetermined potential, an electrostatic field or static electricity is generated in the object by the electric field generated from the electrode. Divided. Then, the object to be held is fixed to the electrostatic chuck device by a charge or a coulomb force (electrostatic force) between the electrode and the electrode of the electrostatic chuck device. [0004] The electrostatic adsorption caused by Coulomb force is particularly strong when the object being held is a conductor with free electrons. On the other hand, although the object to be held is a semiconductor or an insulator, although electrostatic polarization is generated, the electrostatic attraction caused by the electrostatic polarization is relatively weak. Therefore, for example, when the electrodes of the electrostatic chuck device in the processing device are set to a predetermined low potential to hold the semiconductor and insulator to be held, the inside of the processing device is set to a vacuum to generate a plasma in the processing device. The slurry supplies cations to the substrate. [0005] Then, an electrostatic polarization is generated on the upper side of the object to be held. This polarization is constituted by an electric dipole having a negative charge disposed above and a positive charge disposed below. The electrostatic polarization on the lower side of the held object, which is generated when a low-potential DC voltage is supplied to the electrodes of the electrostatic chuck device, is also composed of an electric dipole having a negative charge disposed above and a positive charge disposed below. Therefore, the electrostatic polarization at the lower side is assisted by the electrostatic polarization at the upper side of the object to be held, and the electrostatic adsorption caused by the Coulomb force is enhanced. [0006] At this time, even if the power supply of the electrostatic chuck device to the electrode is stopped, the adsorption force is difficult to completely disappear. Therefore, when the object to be held is peeled off, it is necessary to generate a plasma after stopping the power supply. Surface) to supply electrons to eliminate the potential remaining in the object. However, in order to use the plasma, it is necessary to place the electrostatic chuck device in a vacuum environment, and the control of electrostatic adsorption by the plasma cannot be performed under an atmospheric pressure environment. [0007] Therefore, in order to maintain the semiconductor and insulator holding objects under atmospheric pressure, the shape of the electrodes of the electrostatic chuck device has been worked on, and the static electricity of the holding objects can be maintained by the gradient force. Suction device. In addition, an electrostatic chuck device has been developed that improves the flatness of the holding surface and maintains the suction power even after the power supply is stopped. [Prior Art Document] [Patent Document] [0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-51836

[發明所欲解決之課題]   [0009] 然而,利用梯度力之狀況和提升保持面的平坦性之狀況,在被保持物不是導體之狀況及未維持對電極的供電之狀況中,靜電吸盤裝置的吸附力也難謂已足夠。   [0010] 本發明係有鑑於相關問題點所發明者,其目的係提供即使於大氣壓環境下也可靜電吸附半導體及絕緣體等之被保持物的靜電吸盤裝置、及靜電吸附方法。 [用以解決課題之手段]   [0011] 依據本發明,提供一種靜電吸盤裝置,係在大氣壓環境下靜電吸附被保持物的靜電吸盤裝置,其特徵為:具有:靜電吸盤台,係具備電極與保持面;及離子化空氣供給單元,係對該保持面所保持之該被保持物的露出面供給離子化空氣;該電極,係具有在被保持物的靜電吸附時被供給電荷的功能;該離子化空氣供給單元,係具有將與供給至該電極之電荷的極性相反之極性的電荷的離子,供給至該被保持物的露出面,維持該被保持物之該露出面側的電荷的功能。   [0012] 於本發明的一樣態中,該被保持物,係於一方之面設置保護構件,隔著該保護構件,將該被保持物靜電吸附於該保持面亦可。   [0013] 又,依據本發明的另一樣態,提供一種靜電吸附方法,其特徵為具備:於具備電極與保持面的靜電吸盤台的該保持面,載置被保持物的載置步驟;對該電極供給電荷,產生靜電吸引力的吸引控制步驟;及對該被保持物的露出面,供給與被供給至該電極之電荷的極性相反之極性的電荷的離子化空氣,以維持該被保持物的該露出面的電荷,輔助靜電吸引力的控制的吸引輔助步驟。 [發明的效果]   [0014] 本發明的靜電吸盤裝置,係具有具備電極與保持面的靜電吸盤台,與可供給離子化空氣的離子化空氣供給單元。使該靜電吸盤裝置靜電保持被保持物時,讓該靜電吸盤裝置之靜電吸盤台的保持面接觸被保持物,對該靜電吸盤台的電極供給電荷。   [0015] 於是,藉由從該電荷所產生的電場,與該電荷的極性相反之極性的電荷等被誘導至該被保持物中朝向該保持面的面側。或者,於朝向該保持面的面側產生分極。該分極係藉由與該電極之電荷的極性相反之極性的電荷配置於該保持面側,與該電極之電荷的極性相同之極性的電荷配置於與該保持面側相反側的電偶極子所構成。然後,藉由被保持物中的電荷或分極與靜電吸盤裝置的電極之間的庫倫力(靜電力),被保持物被固定於靜電吸盤裝置。   [0016] 進而,該靜電吸盤裝置可從離子化空氣供給單元對被保持物的露出面(未朝向該保持面之面)供給離子化空氣。此時,從離子化空氣供給單元,與被供給至該電極之電荷的極性相反的極性的離子化空氣被供給至被保持物。於是,於被保持物的該露出面側,激發與該離子化空氣的極性相反之極性的電荷。或者,產生以與該被保持物中之朝向該保持面的面側之分極的電偶極子相同的電偶極子所構成的分極。   [0017] 所以,在被保持物之朝向該保持面的面側,與該露出面側所分別激發的電荷的極性成為相反。或者,在被保持物中之朝向該保持面的面側,與該露出面側所分別產生的分極的方向一致。因此,被保持物中的帶電狀態藉由從該離子化空氣所供給的電荷而增強。亦即,離子化空氣供給單元輔助了庫侖力所致之被保持物的靜電吸附。   [0018] 又,解除靜電吸附而從該靜電吸盤台剝離被保持物時,將與在靜電吸附時供給至靜電吸盤台的電荷相反之極性的電荷供給至該電極。   [0019] 此時,藉由從離子化空氣供給單元供給,殘留於被保持物的該露出面的離子化空氣,維持被保持物中的帶電狀態,故被保持物朝向該保持面之面的電荷等的極性,與新供給至該電極之電荷的極性會一致。於是,在該電極與該被保持物之間相互排斥的方向產生力,故容易從該靜電吸盤台剝離被保持物。   [0020] 因此,依據本發明,提供即使在大氣壓環境下也可靜電吸附半導體及絕緣體等之被保持物的靜電吸盤裝置,及靜電吸盤台的吸引控制方法。[Problems to be Solved by the Invention] 000 [0009] However, in the situation where the gradient force is used and the flatness of the holding surface is improved, in the case where the object to be held is not a conductor and the power supply to the electrode is not maintained, the electrostatic chuck device It is difficult to say that the adsorption force is sufficient. [0010] The present invention was conceived by the inventor in view of the related problems, and its object is to provide an electrostatic chuck device and an electrostatic adsorption method that can electrostatically adsorb a substrate such as a semiconductor and an insulator even in an atmospheric pressure environment. [Means to Solve the Problem] 1 [0011] According to the present invention, an electrostatic chuck device is provided, which is an electrostatic chuck device that electrostatically adsorbs an object to be held in an atmospheric pressure environment, which is characterized by having an electrostatic chuck table, which is provided with electrodes and A holding surface; and an ionized air supply unit for supplying ionized air to the exposed surface of the object to be held held by the holding surface; the electrode having a function of supplying a charge during electrostatic adsorption of the object to be held; The ionized air supply unit has a function of supplying ions having a charge of a polarity opposite to the polarity of the charge supplied to the electrode to the exposed surface of the object to maintain the charge on the exposed surface side of the object. . [0012] In the aspect of the present invention, the object to be held may be provided with a protective member on one side, and the object to be held may be electrostatically adsorbed to the holding surface via the protective member. [0013] Furthermore, according to another aspect of the present invention, an electrostatic adsorption method is provided, comprising: a step of placing an object to be held on the holding surface of an electrostatic chuck table having an electrode and a holding surface; A suction control step in which the electrode supplies electric charges to generate an electrostatic attractive force; and an exposed surface of the held object is supplied with ionized air having a polarity opposite to the polarity of the charges supplied to the electrode to maintain the held The charge of the exposed surface of the object is a suction assisting step that assists in controlling the electrostatic attractive force. [Effects of the Invention] [0014] The electrostatic chuck device of the present invention includes an electrostatic chuck table including an electrode and a holding surface, and an ionized air supply unit capable of supplying ionized air. When electrostatically holding the electrostatic chuck device to the object to be held, the holding surface of the electrostatic chuck table of the electrostatic chuck device is brought into contact with the object to be charged, and the electrodes of the electrostatic chuck table are charged. [0015] Then, by an electric field generated from the charge, a charge or the like having a polarity opposite to the polarity of the charge is induced to a surface side of the held object facing the holding surface. Alternatively, polarization is generated on the side of the surface facing the holding surface. The polarization is arranged on the holding surface side by a charge having a polarity opposite to the polarity of the charge on the electrode, and a charge having the same polarity as the polarity of the charge on the electrode is arranged on the opposite side of the holding surface. Make up. Then, the object to be held is fixed to the electrostatic chuck device by a charge or a coulomb force (electrostatic force) between the electrode and the electrode of the electrostatic chuck device. [0016] Furthermore, the electrostatic chuck device can supply ionized air from the ionized air supply unit to the exposed surface (the surface not facing the holding surface) of the object to be held. At this time, from the ionized air supply unit, ionized air having a polarity opposite to the polarity of the electric charge supplied to the electrode is supplied to the object. Then, a charge having a polarity opposite to that of the ionized air is excited on the exposed surface side of the object to be held. Alternatively, a divided pole composed of the same electric dipole as the electric dipole of the polarized side of the object to be held facing the side of the holding surface is generated. [0017] Therefore, on the surface side of the object to be held facing the holding surface, the polarities of the charges excited respectively on the exposed surface side are opposite. Alternatively, the surface side of the object to be held facing the holding surface coincides with the direction of the polarizations generated on the exposed surface side. Therefore, the charged state of the object to be held is enhanced by the electric charge supplied from the ionized air. That is, the ionized air supply unit assists electrostatic adsorption of the object by Coulomb force. [0018] When the electrostatic adsorption is released and the object to be held is peeled from the electrostatic chuck table, a charge having a polarity opposite to the electric charge supplied to the electrostatic chuck table during electrostatic adsorption is supplied to the electrode. [0019] At this time, the ionized air remaining on the exposed surface of the object to be held is maintained by the ionized air supplied from the ionized air supply unit, so the object to be held faces the surface of the holding surface. The polarity of the electric charge and the like will coincide with the polarity of the electric charge newly supplied to the electrode. Then, a force is generated in a direction in which the electrode and the held object repel each other, so the held object is easily peeled from the electrostatic chuck table. [0020] Therefore, according to the present invention, an electrostatic chuck device capable of electrostatically adsorbing a holding object such as a semiconductor and an insulator even under an atmospheric pressure environment, and a suction control method for the electrostatic chuck table are provided.

[0022] 參照添附圖面,針對本發明的實施形態進行說明。圖1(A)係模式說明本實施形態的靜電吸盤裝置所靜電吸附之被保持物的一例的立體圖。如圖1(A)所示,本實施形態的靜電吸盤裝置所靜電吸附之被保持物係例如以半導體所成的晶圓1。   [0023] 該晶圓1係大略圓板狀,在藉由於表面1a格子狀地排列之複數預定分割線3所區劃的各區域,形成IC或LSI等的裝置5。該晶圓1係利用從背面1b側研磨加工而薄化。然後,沿著該預定分割線3分割該晶圓1的話,可形成各個裝置晶片。   [0024] 但是,本實施形態的靜電吸盤裝置所靜電吸附之被保持物並不限於以半導體所成的晶圓,作為以金屬等的導電體或玻璃等的絕緣體所成之圓板狀的基板亦可。在本實施形態的靜電吸盤裝置中,不管被保持物是導電體、絕緣體、或半導體之任一,都可靜電吸附被保持物。又,於晶圓1等之被保持物的一方之面設置保護構件亦可,此時,該被保持物隔著該保護構件被靜電吸盤裝置靜電吸附。   [0025] 接著,針對本實施形態的靜電吸盤裝置進行說明。圖1(B)係模式說明本實施形態的靜電吸盤裝置2的立體圖。如圖1(B)所示,該靜電吸盤裝置2係具備靜電吸盤台4,與設置於該靜電吸盤台4之上方的離子化空氣供給單元6。   [0026] 圖2(A)係模式說明靜電吸盤裝置2的剖面圖。靜電吸盤台4係具有可靜電吸附被載置其上側的保持面4a上之晶圓1等的被保持物的功能。於該靜電吸盤台4的保持面4a側,設置有電極4c,與包圍該電極4c的絕緣體4b。該電極4c係電性連接於電源4d,該電源4d係具有對該電極4c供給正或負的電荷的功能。   [0027] 離子化空氣供給單元6係例如靜電去除器,具有可向靜電吸盤台4的保持面4a供給正或負帶電之離子化空氣的功能。如圖1(B)所示,離子化空氣供給單元6係於靜電吸盤台4的上方,具有離子化空氣供給頭6a、對該離子化空氣供給頭6a供給正或負帶電之離子化空氣的離子化空氣供給源6b。   [0028] 一般來說,將靜電去除器使用於所定對象的除電時,以產生大略相同量的正帶電的離子化空氣,與負帶電的離子化空氣之方式使用。相對於此,在本實施形態的靜電吸盤裝置2之靜電去除器等的離子化空氣供給單元6中,產生正帶電的離子化空氣,或負帶電的離子化空氣之一方,供給至靜電吸盤台上。   [0029] 離子化空氣供給源6b係例如具有連接於高壓電源的放電針。使該離子化空氣供給源6b從外部擷取空氣,從該放電針施加交流電壓或直流電壓,進行電暈放電,使空氣正帶電或負帶電以產生離子化空氣。   [0030] 於離子化空氣供給源6b例如使用連接於交流電源的放電針時,以供給至該放電針之交流電壓的最低電壓為正之方式,使該交流電壓升壓至大於該交流電壓的振幅。或者,以交流電壓的最高電壓為負之方式,使該交流電壓降壓至大於該交流電壓的振幅。然後,產生正帶電的離子化空氣,或負帶電的離子化空氣之一方。   [0031] 又,於離子化空氣供給源6b,使用連接於直流電源的正極側的放電針,與連接於直流電源的負極側的放電針之兩個放電針時,僅對一方的放電針供給直流電壓。然後,產生正帶電的離子化空氣,或負帶電的離子化空氣之一方。   [0032] 離子化空氣供給源6b中所產生的離子化空氣,係被供給至離子化空氣供給頭6a,從設置於該離子化空氣供給頭6a之下面的供給口6c,向靜電吸盤台4的保持面4a放出。   [0033] 接著,針對使本實施形態的靜電吸盤裝置靜電吸引被保持物的方法進行說明。圖2(B)係模式揭示使該靜電吸盤裝置2靜電吸引晶圓1之狀態的剖面圖。   [0034] 如圖2(B)所示,在該方法中首先實施將晶圓1載置於靜電吸盤台4的保持面4a的載置步驟。載置步驟之後,實施對靜電吸盤台4的電極4c供給電荷,產生靜電吸引力的吸引控制步驟。又,在載置步驟之後,實施對晶圓1的露出面,供給與被供給至該電極4c之電荷的極性相反之極性的電荷的離子化空氣8,以維持該晶圓1的該露出面的電荷,輔助靜電吸引力的控制的吸引輔助步驟。   [0035] 針對使靜電吸盤裝置2靜電吸引晶圓1的方法之各步驟詳細說明。在載置步驟中,以不是對於晶圓1進行加工的對象之側的面接觸該保持面4a之方式,將晶圓1載置於靜電吸盤台4之上。於是,對於晶圓1之加工的對象之側的面成為露出面,可對該面實施所定加工。   [0036] 接著,針對吸引控制步驟進行說明。在該吸引控制步驟中,從電源4d對靜電吸盤台4的電極4c供給電荷,產生對於晶圓1的靜電吸引力。該電極4c成為所定電位的話,藉由從電極4c產生的電場,於晶圓1中產生靜電感應或靜電分極。然後,藉由晶圓1中的電荷或分極與靜電吸盤台4之間的庫倫力(靜電力),晶圓1被固定於靜電吸盤台4。   [0037] 但是,庫侖力所致之靜電吸附的吸附力,係在晶圓1是具有自由電子的導體時變強,但被保持物是半導體或絕緣體的話比較弱,例如,停止對於電極4c之電荷的供給的話則吸附力會大幅減少。因此,實施吸引輔助步驟。   [0038] 接著,針對吸引輔助步驟進行說明。在該吸引輔助步驟中,從離子化空氣供給單元6將與供給至該電極4c的電荷相反的極性帶電的離子化空氣8供給晶圓1的露出面。例如,對該電極4c供給正電荷時,則從離子化空氣供給頭6a放出負帶電的離子化空氣8,在對該電極4c供給負電荷時,則從離子化空氣供給頭6a放出正帶電的離子化空氣8。   [0039] 圖3(A)係模式說明被保持物之靜電吸附時的電荷等的剖面圖。於圖3(A)模式揭示電極4c的電荷、晶圓1的電荷等、及離子化空氣所致之電荷10的各別極性的關係。於圖3(A)中表示電荷等之圓的顏色係表示該電荷等的極性。同色的圓是同極性的電荷等。兩個圓相互不同顏色時,則表示相互相反之極性的電荷。又,晶圓1的圓係作為電荷而模式表現靜電感應或靜電分極所致之電性偏差者。   [0040] 供給至靜電吸盤台4的電極4c之電荷12的極性為正時,則將離子化空氣所致之電荷10的極性設為負。於是,起因於電極4c所產生之晶圓下面的電荷7b的極性為負之外,起因於離子化空氣所致之電荷10所產生之晶圓上面的電荷7a的極性為正。因此,晶圓上面的電荷7a與晶圓下面的電荷7b成為相互相反的極性。   [0041] 相較於晶圓上面的電荷7a與晶圓下面的電荷7b成為相同極性之狀況,在成為相反極性之狀況中,靜電感應或靜電分極更容易變強。又,即使停止對電極4c之電荷(電壓)的供給,藉由離子化空氣所致之電荷10,晶圓1的內部的電荷或分級也不會消解,可庫侖力依然作用於晶圓1。因此,晶圓1持續被靜電吸盤台4靜電吸附。   [0042] 接著,針對解除晶圓1的靜電吸附,從靜電吸盤台4剝離晶圓1之狀況進行說明。從靜電吸盤台4剝離晶圓1時,對靜電吸盤台4的電極4c,將與靜電吸引時所供給之電荷的極性相反之極性的電荷供給至該電極4c。圖3(B)係模式說明從該靜電吸盤台4剝離晶圓1之狀態的剖面圖。   [0043] 如圖3(B)所示,並未藉由離子化空氣所致之電荷10,消解晶圓1的內部的電荷或分極。例如,靜電吸引時供給至電極4c之電荷12的極性為正時,起因於電極4c所產生之晶圓下面的電荷7b的極性為負。   [0044] 然後,對電極4c供給負電荷。於是,晶圓下面的電荷7b與供給至電極4c的電荷14成為相互相同極性。因此,在電極4c與晶圓1之間產生斥力而容易剝離晶圓1。   [0045] 如以上所說明般,本實施形態的靜電吸盤裝置2係具有具備電極1c的靜電吸盤台4與離子化空氣供給單元6,故容易實施晶圓1的靜電吸附與剝離。此時,因為不利用電漿,靜電吸盤裝置2即使在大氣壓環境下也可靜電吸附晶圓1。   [0046] 對於被靜電吸盤裝置2靜電吸附的晶圓1,實施所定加工。例如,靜電吸盤裝置2被組入磨削晶圓1的磨削裝置時,則對於晶圓1實施磨削加工。又,靜電吸盤裝置2被組入切削晶圓1的切削裝置時,則對於晶圓1實施切削加工。如此,靜電吸盤裝置2即使不在真空環境下也可靜電吸附晶圓1,故實施於晶圓1的加工並不限於在真空中進行的加工。   [0047] 再者,本發明並不限定於前述實施形態的記載,可進行各種變更來實施。例如,靜電吸盤台4與離子化空氣供給單元6係相互分離而獨立使用亦可,分別使用於其他用途亦可。例如,離子化空氣供給單元6是靜電去除器時,可供給包含雙方極性的離子化空氣大略等量的離子化空氣亦可,使用於對象的除電用亦可。   [0048] 相互獨立之靜電吸盤台4與離子化空氣供給單元6為了晶圓1等的被保持物的靜電保持,如前述的實施形態所說明般使用時,兩者係構成靜電吸盤裝置2。   [0049] 此外,前述實施形態的構造、方法等只要不脫離本發明的目的的範圍,可適當變更來實施。[0022] An embodiment of the present invention will be described with reference to the accompanying drawings. FIG. 1 (A) is a perspective view schematically illustrating an example of an object to be electrostatically attracted by the electrostatic chuck device according to the embodiment. As shown in FIG. 1 (A), the object to be held which is electrostatically adsorbed by the electrostatic chuck device of this embodiment is, for example, a wafer 1 made of a semiconductor. [0023] This wafer 1 has a substantially circular plate shape, and devices 5 such as ICs or LSIs are formed in each area divided by a plurality of predetermined dividing lines 3 arranged in a grid pattern on the surface 1a. This wafer 1 is thinned by polishing from the back surface 1b side. When the wafer 1 is divided along the predetermined dividing line 3, each device wafer can be formed. [0024] However, the object to be electrostatically attracted by the electrostatic chuck device according to this embodiment is not limited to a wafer formed of a semiconductor, and a disc-shaped substrate formed of a conductor such as a metal or an insulator such as glass. Yes. In the electrostatic chuck device of this embodiment, the object to be held can be electrostatically adsorbed regardless of whether the object to be held is a conductor, an insulator, or a semiconductor. In addition, a protection member may be provided on one side of the object to be held such as the wafer 1. In this case, the object to be held is electrostatically attracted to the electrostatic chuck device via the protection member. [0025] Next, an electrostatic chuck device according to this embodiment will be described. FIG. 1 (B) is a perspective view schematically illustrating an electrostatic chuck device 2 according to this embodiment. As shown in FIG. 1 (B), the electrostatic chuck device 2 includes an electrostatic chuck table 4 and an ionized air supply unit 6 provided above the electrostatic chuck table 4. [0026] FIG. 2 (A) is a schematic cross-sectional view illustrating the electrostatic chuck device 2. The electrostatic chuck table 4 has a function of electrostatically adsorbing objects to be held such as the wafer 1 on the holding surface 4a placed on the upper surface. An electrode 4c and an insulator 4b surrounding the electrode 4c are provided on the holding surface 4a side of the electrostatic chuck table 4. The electrode 4c is electrically connected to a power source 4d, and the power source 4d has a function of supplying a positive or negative charge to the electrode 4c. [0027] The ionized air supply unit 6 is, for example, a static eliminator, and has a function of supplying positive or negatively charged ionized air to the holding surface 4a of the electrostatic chuck table 4. As shown in FIG. 1 (B), the ionized air supply unit 6 is located above the electrostatic chuck table 4, and has an ionized air supply head 6a, and a positive or negatively charged ionized air is supplied to the ionized air supply head 6a. Ionized air supply source 6b. [0028] Generally, when a static eliminator is used for the static elimination of a given object, it is used in a manner that generates approximately the same amount of positively charged ionized air and negatively charged ionized air. On the other hand, in the ionized air supply unit 6 such as the electrostatic eliminator of the electrostatic chuck device 2 of the present embodiment, either positively charged ionized air or negatively charged ionized air is generated and supplied to the electrostatic chuck table. on. [0029] The ionized air supply source 6b has, for example, a discharge needle connected to a high-voltage power supply. The ionized air supply source 6b is configured to capture air from the outside, apply an AC voltage or a DC voltage from the discharge needle, and perform a corona discharge to positively or negatively charge the air to generate ionized air. [0030] When the ionized air supply source 6b uses, for example, a discharge pin connected to an AC power source, the AC voltage is boosted to an amplitude greater than the AC voltage so that the minimum voltage of the AC voltage supplied to the discharge pin is positive. . Alternatively, in a manner that the highest voltage of the AC voltage is negative, the AC voltage is stepped down to an amplitude greater than the AC voltage. Then, either positively charged ionized air or negatively charged ionized air is generated. [0031] In the ionized air supply source 6b, when two discharge needles connected to the positive electrode side of the DC power supply and the discharge needle connected to the negative side of the DC power supply are used, only one discharge needle is supplied. DC voltage. Then, either positively charged ionized air or negatively charged ionized air is generated. [0032] The ionized air generated in the ionized air supply source 6b is supplied to the ionized air supply head 6a, and from the supply port 6c provided below the ionized air supply head 6a to the electrostatic chuck table 4 The holding surface 4a is released. [0033] Next, a method for electrostatically attracting an object to be held by the electrostatic chuck device of this embodiment will be described. FIG. 2 (B) is a cross-sectional view schematically showing a state where the electrostatic chuck device 2 electrostatically attracts the wafer 1. [0034] As shown in FIG. 2 (B), in this method, first, a mounting step of placing the wafer 1 on the holding surface 4a of the electrostatic chuck table 4 is performed. After the mounting step, a suction control step of supplying electric charges to the electrodes 4c of the electrostatic chuck table 4 to generate an electrostatic attractive force is performed. After the placing step, the exposed surface of the wafer 1 is supplied with ionized air 8 having a polarity opposite to the polarity of the charge supplied to the electrode 4 c to maintain the exposed surface of the wafer 1. The charge-assisted assisted step assists the control of electrostatic attraction. [0035] Each step of the method of electrostatically attracting the wafer 1 to the electrostatic chuck device 2 will be described in detail. In the mounting step, the wafer 1 is placed on the electrostatic chuck table 4 such that a surface on the side that is not an object of processing the wafer 1 contacts the holding surface 4 a. Then, the surface on the processing object side of the wafer 1 becomes an exposed surface, and a predetermined processing can be performed on the surface. [0036] Next, a suction control procedure will be described. In this attraction control step, an electric charge is supplied from the power source 4d to the electrode 4c of the electrostatic chuck table 4, and an electrostatic attraction force to the wafer 1 is generated. When the electrode 4c has a predetermined potential, an electrostatic induction or electrostatic polarization is generated in the wafer 1 by an electric field generated from the electrode 4c. Then, the wafer 1 is fixed to the electrostatic chuck table 4 by the Coulomb force (electrostatic force) between the electric charge or the poles in the wafer 1 and the electrostatic chuck table 4. [0037] However, the adsorption force of electrostatic adsorption due to Coulomb force becomes stronger when the wafer 1 is a conductor with free electrons, but it is weaker when the substrate is a semiconductor or an insulator. When the electric charge is supplied, the adsorption force is greatly reduced. Therefore, a suction assisting step is implemented. [0038] Next, a suction assisting step will be described. In this suction assisting step, the ionized air supply unit 6 supplies ionized air 8 having a polarity opposite to the electric charge supplied to the electrode 4 c to the exposed surface of the wafer 1. For example, when a positive charge is supplied to the electrode 4c, negatively charged ionized air 8 is discharged from the ionized air supply head 6a, and when a negative charge is supplied to the electrode 4c, positively charged air is discharged from the ionized air supply head 6a. Ionized air 8. [0039] FIG. 3 (A) is a cross-sectional view schematically illustrating electric charges and the like during electrostatic adsorption of an object to be held. The relationship between the charge of the electrode 4c, the charge of the wafer 1, and the like, and the respective polarities of the charge 10 due to ionized air are revealed in the mode of FIG. 3 (A). The color of the circle showing the charge and the like in FIG. 3 (A) shows the polarity of the charge and the like. Circles of the same color are charges of the same polarity. When the two circles have different colors, they represent charges of opposite polarities. In addition, the circle system of the wafer 1 is a model of electric deviation due to electrostatic induction or electrostatic polarization as a charge. [0040] When the polarity of the charge 12 supplied to the electrode 4c of the electrostatic chuck table 4 is positive, the polarity of the charge 10 caused by the ionized air is set to negative. Thus, in addition to the negative polarity of the charge 7b under the wafer generated by the electrode 4c, the polarity of the charge 7a on the wafer due to the charge 10 caused by ionized air is positive. Therefore, the charges 7a on the wafer and the charges 7b on the wafer have opposite polarities. [0041] Compared with the situation where the electric charge 7a on the wafer and the electric charge 7b on the wafer have the same polarity, in a situation of the opposite polarity, the electrostatic induction or electrostatic polarization is more likely to become stronger. In addition, even if the supply of the electric charge (voltage) to the electrode 4c is stopped, the electric charge or classification in the wafer 1 will not be dissipated by the electric charge 10 caused by the ionized air, and the Coulomb force will still act on the wafer 1. Therefore, the wafer 1 is continuously electrostatically attracted by the electrostatic chuck table 4. [0042] Next, a description will be given of a state where the electrostatic adsorption of the wafer 1 is released and the wafer 1 is peeled from the electrostatic chuck table 4. When the wafer 1 is peeled from the electrostatic chuck table 4, the electrode 4 c of the electrostatic chuck table 4 is supplied with a charge having a polarity opposite to the polarity of the charge supplied during the electrostatic attraction to the electrode 4 c. FIG. 3 (B) is a cross-sectional view schematically illustrating a state where the wafer 1 is peeled from the electrostatic chuck table 4. [0043] As shown in FIG. 3 (B), the charge or polarization in the wafer 1 is not dissipated by the charge 10 caused by the ionized air. For example, when the polarity of the charge 12 supplied to the electrode 4c during electrostatic attraction is positive, the polarity of the charge 7b under the wafer caused by the electrode 4c is negative. [0044] Then, a negative charge is supplied to the electrode 4c. Then, the electric charges 7b on the lower surface of the wafer and the electric charges 14 supplied to the electrodes 4c have the same polarity as each other. Therefore, a repulsive force is generated between the electrode 4c and the wafer 1, and the wafer 1 is easily peeled. [0045] As described above, since the electrostatic chuck device 2 of this embodiment includes the electrostatic chuck table 4 including the electrode 1c and the ionized air supply unit 6, it is easy to perform electrostatic adsorption and peeling of the wafer 1. At this time, since no plasma is used, the electrostatic chuck device 2 can electrostatically adsorb the wafer 1 even under an atmospheric pressure environment. [0046] The wafer 1 electrostatically attracted by the electrostatic chuck device 2 is subjected to a predetermined process. For example, when the electrostatic chuck device 2 is incorporated into a grinding device for grinding the wafer 1, the wafer 1 is subjected to a grinding process. When the electrostatic chuck device 2 is incorporated into a cutting device for cutting the wafer 1, the wafer 1 is subjected to a cutting process. As described above, the electrostatic chuck device 2 can electrostatically adsorb the wafer 1 even when the electrostatic chuck device 2 is not in a vacuum environment. Therefore, the processing performed on the wafer 1 is not limited to processing performed in a vacuum. [0047] In addition, the present invention is not limited to the description of the aforementioned embodiment, and can be implemented with various changes. For example, the electrostatic chuck table 4 and the ionized air supply unit 6 may be used separately from each other, and may be used separately for other purposes. For example, when the ionized air supply unit 6 is an electrostatic eliminator, it may supply approximately the same amount of ionized air including ionized air of both polarities, and it may be used for static electricity removal of an object. [0048] The electrostatic chuck table 4 and the ionized air supply unit 6 which are independent of each other are used for electrostatic holding of the objects to be held such as the wafer 1, and when used as described in the foregoing embodiment, they constitute the electrostatic chuck device 2. [0049] The structures, methods, and the like of the aforementioned embodiments can be appropriately modified and implemented as long as they do not depart from the scope of the object of the present invention.

[0050][0050]

1‧‧‧晶圓1‧‧‧ wafer

1a‧‧‧表面1a‧‧‧ surface

1b‧‧‧背面1b‧‧‧ back

2‧‧‧靜電吸盤裝置2‧‧‧ electrostatic chuck device

3‧‧‧預定分割線3‧‧‧ Scheduled dividing line

4‧‧‧靜電吸盤台4‧‧‧ electrostatic chuck table

4a‧‧‧保持面4a‧‧‧ keep face

4b‧‧‧絕緣體4b‧‧‧ insulator

4c‧‧‧電極4c‧‧‧electrode

4d‧‧‧電源4d‧‧‧ Power

5‧‧‧裝置5‧‧‧ device

6‧‧‧離子化空氣供給單元6‧‧‧ ionized air supply unit

6a‧‧‧離子化空氣供給頭6a‧‧‧ ionized air supply head

6b‧‧‧離子化空氣供給源6b‧‧‧Ionized air supply source

6c‧‧‧供給口6c‧‧‧Supply

7a‧‧‧晶圓上面的電荷7a‧‧‧ Charge on wafer

7b‧‧‧晶圓下面的電荷7b‧‧‧ Charge under the wafer

8‧‧‧離子化空氣8‧‧‧ ionized air

10‧‧‧離子化空氣所致之電荷10‧‧‧ Charge due to ionized air

12,14‧‧‧供給至電極的電荷12, 14‧‧‧ Charge supplied to the electrode

[0021]   [圖1] 圖1(A)係模式揭示靜電吸盤裝置所靜電吸附之被保持物的一例的立體圖,圖1(B)係模式揭示靜電吸盤裝置的立體圖。   [圖2] 圖2(A)係模式揭示靜電吸盤裝置的剖面圖,圖2(B)係模式揭示靜電吸盤裝置之被保持物的靜電吸附的剖面圖。   [圖3] 圖3(A)係模式地說明被保持物之靜電吸引時的電荷等的剖面圖,圖3(B)係模式地說明被保持物之剝離時的電荷等的剖面圖。[0021] [FIG. 1] FIG. 1 (A) is a perspective view showing an example of an object to be electrostatically attracted by an electrostatic chuck device, and FIG. 1 (B) is a perspective view showing an electrostatic chuck device. [Fig. 2] Fig. 2 (A) is a cross-sectional view showing the electrostatic chuck device in a mode, and Fig. 2 (B) is a cross-sectional view showing the electrostatic adsorption of a held object in the electrostatic chuck device. [FIG. 3] FIG. 3 (A) is a cross-sectional view schematically illustrating electric charges and the like when the object to be held is electrostatically attracted, and FIG. 3 (B) is a cross-sectional view schematically illustrating electric charges and the like when the object is peeled.

Claims (3)

一種靜電吸盤裝置,係在大氣壓環境下靜電吸附被保持物的靜電吸盤裝置,其特徵為:   具有:   靜電吸盤台,係具備電極與保持面;及   離子化空氣供給單元,係對該保持面所保持之該被保持物的露出面供給離子化空氣;   該電極,係具有在被保持物的靜電吸附時被供給電荷的功能;   該離子化空氣供給單元,係具有將與供給至該電極之電荷的極性相反之極性的電荷的離子,供給至該被保持物的露出面,維持該被保持物之該露出面側的電荷的功能。An electrostatic chuck device is an electrostatic chuck device that electrostatically adsorbs an object to be held under an atmospheric pressure environment, and is characterized by: having: an electrostatic chuck table with electrodes and a holding surface; and an ionized air supply unit for the holding surface The exposed surface of the object to be held supplies ionized air; 电极 The electrode has a function of supplying a charge during electrostatic adsorption of the object; 离子 The ionized air supply unit has a charge to be supplied to the electrode. The charged ions with opposite polarities are supplied to the exposed surface of the object to maintain the function of the charges on the exposed surface side of the object. 如申請專利範圍第1項所記載之靜電吸盤裝置,其中,   該被保持物,係於一方之面設置保護構件;   隔著該保護構件,將該被保持物靜電吸附於該保持面。According to the electrostatic chuck device described in item 1 of the scope of patent application, the object to be held is provided with a protective member on one side; and the object to be held is electrostatically adsorbed to the holding surface via the protective member. 一種靜電吸附方法,其特徵為具備:   於具備電極與保持面的靜電吸盤台的該保持面,載置被保持物的載置步驟;   對該電極供給電荷,產生靜電吸引力的吸引控制步驟;及   對該被保持物的露出面,供給與被供給至該電極之電荷的極性相反之極性的電荷的離子化空氣,以維持該被保持物的該露出面的電荷,輔助靜電吸引力的控制的吸引輔助步驟。An electrostatic adsorption method, comprising: (1) a mounting step of placing an object to be held on the holding surface of an electrostatic chuck table having an electrode and a holding surface; and (2) an attraction control step of supplying an electric charge to the electrode to generate an electrostatic attractive force; And an ionized air having a polarity opposite to the polarity of the charge supplied to the electrode to the exposed surface of the object to maintain the charge on the exposed surface of the object and assist in controlling electrostatic attraction Attracting auxiliary steps.
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