TW201600474A - Glass substrate manufacturing method and glass substrate - Google Patents
Glass substrate manufacturing method and glass substrate Download PDFInfo
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- TW201600474A TW201600474A TW104120841A TW104120841A TW201600474A TW 201600474 A TW201600474 A TW 201600474A TW 104120841 A TW104120841 A TW 104120841A TW 104120841 A TW104120841 A TW 104120841A TW 201600474 A TW201600474 A TW 201600474A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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Abstract
Description
本發明係關於一種包含玻璃基板之熱處理步驟之玻璃基板之製造方法及玻璃基板。 The present invention relates to a method for producing a glass substrate comprising a heat treatment step of a glass substrate, and a glass substrate.
近年來,於顯示面板領域,為了提高畫質,像素之高精細化不斷進展。伴隨該高精細化之進展,對顯示面板所使用之玻璃基板亦期望尺寸精度較高。例如,為了於顯示面板之製造步驟中,玻璃基板即便於高溫下進行熱處理,尺寸亦不易發生變化,而要求熱收縮較小之玻璃基板。 In recent years, in the field of display panels, in order to improve image quality, the definition of pixels has been progressing. Along with the progress of the high definition, the dimensional accuracy of the glass substrate used for the display panel is also expected to be high. For example, in the manufacturing process of the display panel, the glass substrate is not easily changed in size even when heat-treated at a high temperature, and a glass substrate having a small heat shrinkage is required.
一般而言,玻璃基板之熱收縮率係玻璃之應變點越高則其越小。因此,已知有為了抑制熱收縮率而以使應變點變高之方式變更玻璃組成之方法(專利文獻1)。然而,若以使應變點變高之方式變更玻璃組成,則有失透溫度變高之傾向,存在難以製造玻璃基板之問題。 In general, the thermal shrinkage of the glass substrate is such that the higher the strain point of the glass, the smaller it is. Therefore, a method of changing the glass composition so as to increase the strain point in order to suppress the heat shrinkage rate is known (Patent Document 1). However, if the glass composition is changed so that the strain point becomes high, the devitrification temperature tends to increase, and there is a problem that it is difficult to produce a glass substrate.
[專利文獻1]日本專利特表2014-503465 [Patent Document 1] Japanese Patent Special Table 2014-503465
作為不造成玻璃基板製造之困難性而使玻璃基板之熱收縮減小之方法,有對藉由將利用熔融法等所成形之平板玻璃切斷而獲得之玻璃基板以離線之方式進行熱處理(離線退火)的方法。然而,於離線退 火中,存在如下問題:於使玻璃基板升溫/降溫時,於玻璃基板之面方向產生溫度差,導致熱收縮率於玻璃基板之面方向發生不均。又,於離線退火中,存在如下問題:於使玻璃基板之溫度升溫/降溫時,若加快升溫速度/降溫速度,則玻璃基板之熱收縮率不會減小,若減慢升溫速度、降溫速度,則玻璃基板之生產效率降低。 As a method of reducing the heat shrinkage of the glass substrate without causing difficulty in the production of the glass substrate, the glass substrate obtained by cutting the flat glass formed by the melt method or the like is subjected to heat treatment off-line (offline) Annealing method. However, offline In the case of the fire, when the temperature and temperature of the glass substrate are raised and lowered, a temperature difference occurs in the surface direction of the glass substrate, and the heat shrinkage rate is uneven in the surface direction of the glass substrate. Further, in the off-line annealing, when the temperature of the glass substrate is raised or lowered, if the temperature increase rate/temperature drop rate is increased, the heat shrinkage rate of the glass substrate is not reduced, and the temperature increase rate and the temperature decrease rate are slowed down. The production efficiency of the glass substrate is lowered.
因此,本發明之目的在於提供一種玻璃基板之製造方法及玻璃基板,該玻璃基板之製造方法可提高玻璃基板之生產效率並且減小玻璃基板之熱收縮率,又,可降低熱收縮率於玻璃基板之面方向上之不均。 Therefore, an object of the present invention is to provide a method for producing a glass substrate, which can improve the production efficiency of the glass substrate and reduce the heat shrinkage rate of the glass substrate, and can reduce the heat shrinkage rate in the glass. Unevenness in the direction of the surface of the substrate.
本發明之玻璃基板之製造方法及玻璃基板包含以下形態。 The method for producing a glass substrate of the present invention and the glass substrate include the following aspects.
一種玻璃基板之製造方法,其特徵在於:其係包含玻璃基板之熱處理步驟者,且上述熱處理步驟包含以下步驟:於較應變點低60℃~260℃之溫度即熱處理溫度下對上述玻璃基板整體進行熱處理;以第1速度將上述玻璃基板整體自上述熱處理溫度冷卻至較上述熱處理溫度低50℃~300℃之中間溫度;及上述熱處理步驟後,以較上述第1速度快之第2速度將上述玻璃基板整體自上述中間溫度冷卻至室溫。 A method for producing a glass substrate, characterized in that it comprises a heat treatment step of a glass substrate, and the heat treatment step comprises the steps of: treating the entire glass substrate at a temperature lower than a strain point by a temperature of 60 ° C to 260 ° C, that is, a heat treatment temperature. Performing heat treatment; cooling the entire glass substrate from the heat treatment temperature to an intermediate temperature lower than the heat treatment temperature by 50 ° C to 300 ° C at a first speed; and after the heat treatment step, at a second speed faster than the first speed The entire glass substrate was cooled from the intermediate temperature to room temperature.
一種玻璃基板之製造方法,其特徵在於:其係包含玻璃基板之熱處理步驟者,且上述熱處理步驟包含以下步驟:於自室溫起進行熱處理直至成為較應變點低60℃~260℃之溫度 即熱處理溫度時,以第3速度將上述玻璃基板整體自上述室溫加熱至較上述熱處理溫度低50℃~300℃之中間溫度;以較上述第3速度慢之第4速度將上述玻璃基板整體自上述中間溫度加熱至上述熱處理溫度;及以上述熱處理溫度對上述玻璃基板整體進行熱處理。 A method for producing a glass substrate, characterized in that it comprises a heat treatment step of a glass substrate, and the heat treatment step comprises the steps of: heat treatment from room temperature until a temperature lower than a strain point by 60 ° C to 260 ° C That is, at the heat treatment temperature, the entire glass substrate is heated from the room temperature to an intermediate temperature lower than the heat treatment temperature by 50 ° C to 300 ° C at a third speed; and the glass substrate is entirely at a fourth speed slower than the third speed. Heating from the intermediate temperature to the heat treatment temperature; and heat treating the entire glass substrate at the heat treatment temperature.
如形態1之玻璃基板之製造方法,其中上述熱處理步驟包含以下步驟:於自室溫起進行熱處理直至成為較應變點低60℃~260℃之溫度即熱處理溫度時,以第3速度將上述玻璃基板整體自上述室溫加熱至較上述熱處理溫度低50℃~300℃之中間溫度;及以較上述第3速度慢之第4速度將上述玻璃基板整體自上述中間溫度加熱至上述熱處理溫度;且上述第1速度與上述第2速度之平均速度較上述第3速度與上述第4速度之平均速度慢。 The method for producing a glass substrate according to the first aspect, wherein the heat treatment step comprises the step of: heat-treating from room temperature until the temperature is 60 ° C to 260 ° C lower than the strain point, that is, the heat treatment temperature, and the glass substrate is driven at a third speed. Heating the whole room temperature to an intermediate temperature lower than the heat treatment temperature by 50 ° C to 300 ° C; and heating the entire glass substrate from the intermediate temperature to the heat treatment temperature at a fourth speed slower than the third speed; The average speed of the first speed and the second speed is slower than the average speed of the third speed and the fourth speed.
如形態1至3中任一項之玻璃基板之製造方法,其中上述玻璃基板之應變點為655℃以上。 The method for producing a glass substrate according to any one of aspects 1 to 3, wherein the glass substrate has a strain point of 655 ° C or higher.
如形態1至4中任一項之玻璃基板之製造方法,其中於上述熱處理步驟中,對將上述玻璃基板以夾於片材體之間之狀態於厚度方向積層複數片而成的玻璃基板之積層體進行熱處理。 The method of producing a glass substrate according to any one of the aspects of the present invention, wherein the glass substrate is formed by laminating a plurality of sheets in a thickness direction in a state in which the glass substrate is sandwiched between the sheet bodies. The laminate is heat treated.
一種玻璃基板之製造方法,其特徵在於:其係包含平板顯示器用單層玻璃基板之熱處理步驟者,且上述熱處理步驟包含: 加熱維持步驟,其係將上述玻璃基板加熱至處於400℃~600℃之範圍之熱處理溫度,並維持上述熱處理溫度;及冷卻步驟,其係以0.5℃/分鐘以上且未達10℃/分鐘之第1降溫速度,將上述玻璃基板自上述熱處理溫度冷卻至較上述熱處理溫度低50℃~150℃之溫度即中間溫度後,以10℃/分鐘以上且未達25℃/分鐘之第2降溫速度將上述玻璃基板冷卻。 A method for producing a glass substrate, comprising: a heat treatment step comprising a single-layer glass substrate for a flat panel display, wherein the heat treatment step comprises: a heating maintaining step of heating the glass substrate to a heat treatment temperature in a range of 400 ° C to 600 ° C and maintaining the heat treatment temperature; and a cooling step of 0.5 ° C / min or more and less than 10 ° C / min The first temperature drop rate is obtained by cooling the glass substrate from the heat treatment temperature to a temperature lower than the heat treatment temperature by 50 ° C to 150 ° C, that is, an intermediate temperature of 10 ° C / min or more and less than 25 ° C / min. The above glass substrate was cooled.
如形態6之玻璃基板之製造方法,其中於上述玻璃基板形成由IGZO構成之半導體層。 A method of producing a glass substrate according to aspect 6, wherein a semiconductor layer made of IGZO is formed on the glass substrate.
如形態6或7之玻璃基板之製造方法,其中於上述冷卻步驟中,以上述第2降溫速度將上述玻璃基板冷卻後,以上述第1降溫速度將上述玻璃基板進而冷卻至成為室溫。 A method of producing a glass substrate according to the aspect 6 or 7, wherein in the cooling step, the glass substrate is cooled at the second temperature drop rate, and then the glass substrate is further cooled to room temperature at the first temperature drop rate.
如形態6至8中任一項之玻璃基板之製造方法,其中於上述熱處理步驟中,於將上述玻璃基板水平載置於爐內進行上述加熱步驟之前,進行加熱直至上述爐內之環境溫度成為上述熱處理溫度。 The method for producing a glass substrate according to any one of the aspects 6 to 8, wherein in the heat treatment step, the glass substrate is horizontally placed in a furnace to perform the heating step, and heating is performed until the ambient temperature in the furnace becomes The above heat treatment temperature.
於上述熱處理步驟中,亦可為對複數片上述玻璃基板逐片進行熱處理之單片方式之熱處理。 In the above heat treatment step, a heat treatment in a single sheet in which the plurality of sheets of the glass substrate are heat-treated one by one may be used.
一種玻璃基板,其特徵在於:其係以處於400℃~600℃之範圍之熱處理溫度維持5分鐘~30分鐘而進行熱處理之液晶顯示器用玻璃基板,且將以500℃作為第1評價溫度、以450℃作為第2評價溫度、以550℃作為第3評價溫度,並將上述玻璃基板以各評價溫度維持30分鐘而再次進行熱處理時的熱收縮率分別設為第1熱收縮率C1、第2熱收縮率 C2、及第3熱收縮率C3,於該情形時,滿足|C1-C2|/|C3-C1|<0.28之關係式。 A glass substrate which is a glass substrate for liquid crystal display which is heat-treated at a heat treatment temperature in the range of 400 ° C to 600 ° C for 5 minutes to 30 minutes, and has a temperature of 500 ° C as the first evaluation temperature. 450 ° C as the second evaluation temperature, 550 ° C as the third evaluation temperature, and the glass substrate is maintained at each evaluation temperature for 30 minutes, and the heat shrinkage rate when the heat treatment is performed again is the first heat shrinkage ratio C1, the second Heat shrinkage rate C2 and the third heat shrinkage ratio C3, in this case, satisfy the relationship of |C1-C2|/|C3-C1|<0.28.
根據上述玻璃基板之製造方法及玻璃基板,可提高玻璃基板之生產效率,並且減小玻璃基板之熱收縮率,又,可降低玻璃基板之熱收縮率之不均。 According to the method for producing a glass substrate and the glass substrate, the production efficiency of the glass substrate can be improved, the heat shrinkage rate of the glass substrate can be reduced, and the unevenness of the heat shrinkage rate of the glass substrate can be reduced.
10‧‧‧積層體 10‧‧‧Layer
11‧‧‧玻璃基板 11‧‧‧ glass substrate
11a‧‧‧邊緣區域 11a‧‧‧Edge area
11b‧‧‧中央區域 11b‧‧‧Central area
12‧‧‧片材體 12‧‧‧Sheet body
15a‧‧‧絕熱板 15a‧‧‧Insulation board
15b‧‧‧絕熱板 15b‧‧‧Insulation board
20‧‧‧托板 20‧‧‧ pallet
21‧‧‧基台部 21‧‧‧Base Department
21a‧‧‧開口 21a‧‧‧ Opening
22‧‧‧載置部 22‧‧‧Loading Department
23‧‧‧背面板 23‧‧‧ Back panel
40‧‧‧爐 40‧‧‧ furnace
41‧‧‧發熱裝置 41‧‧‧heating device
112‧‧‧支持構件 112‧‧‧Support components
140‧‧‧爐 140‧‧‧ furnace
141‧‧‧發熱裝置 141‧‧‧heating device
A‧‧‧點 A‧‧‧ points
B‧‧‧點 B‧‧‧ points
C1‧‧‧第1熱收縮率 C1‧‧‧1st heat shrinkage rate
C2‧‧‧第2熱收縮率 C2‧‧‧2nd heat shrinkage rate
C3‧‧‧第3熱收縮率 C3‧‧‧3rd heat shrinkage rate
D、D1~D3‧‧‧面積 D, D1~D3‧‧‧ area
S1~S8‧‧‧步驟 S1~S8‧‧‧Steps
S1、S2‧‧‧升溫速度 S1, S2‧‧‧ heating rate
S3、S4、S5‧‧‧降溫速度 S3, S4, S5‧‧‧ cooling rate
t0~t5‧‧‧時間 T0~t5‧‧‧Time
Tm1~Tm4‧‧‧溫度 Tm1~Tm4‧‧‧ Temperature
圖1係表示本實施形態之玻璃板之製造方法之流程之一例的流程圖。 Fig. 1 is a flow chart showing an example of a flow of a method for producing a glass sheet according to the present embodiment.
圖2係表示於本實施形態中進行之熱處理中載置有玻璃基板之積層體之托板之一例的側視圖。 Fig. 2 is a side view showing an example of a pallet in which a laminate of a glass substrate is placed in a heat treatment performed in the present embodiment.
圖3(a)係表示玻璃基板上之位置的圖,(b)係表示於玻璃基板上之各位置之熱歷程之一例的圖。 Fig. 3(a) is a view showing a position on a glass substrate, and Fig. 3(b) is a view showing an example of a heat history at each position on the glass substrate.
圖4係表示揭示熱歷程差之面積與應變之關係之一例的圖表。 Fig. 4 is a graph showing an example of the relationship between the area of the heat history difference and the strain.
圖5係表示對玻璃基板進行熱處理時之溫度分佈之一例的圖。 Fig. 5 is a view showing an example of a temperature distribution when a glass substrate is subjected to heat treatment.
圖6(a)係表示於本實施形態中進行之熱處理時之玻璃基板之載置狀態之一例的側視圖,(b)係自底面側觀察(a)之玻璃基板所得的圖。 Fig. 6 (a) is a side view showing an example of a state in which the glass substrate is placed in the heat treatment performed in the embodiment, and (b) is a view of the glass substrate of (a) viewed from the bottom surface side.
圖7係表示玻璃基板之溫度歷程之一例的圖。 Fig. 7 is a view showing an example of a temperature history of a glass substrate.
圖8係表示利用評價熱處理方法對本實施形態中經熱處理之玻璃基板進行熱處理時玻璃基板之熱收縮率之結果之一例的圖。 FIG. 8 is a view showing an example of the result of heat shrinkage of the glass substrate when the glass substrate subjected to heat treatment in the present embodiment is heat-treated by the evaluation heat treatment method.
以下,對本發明之玻璃基板之製造方法進行詳細說明。 Hereinafter, a method of producing the glass substrate of the present invention will be described in detail.
圖1係表示本實施形態之玻璃板之製造方法之流程之一例的流程圖。所製造之玻璃基板並無特別限制,較佳為例如縱向尺寸及橫向尺寸分別為500mm~3500mm。較佳為玻璃基板之厚度為0.1~1.1(mm)、更佳為0.75mm以下之極薄之矩形形狀之板。 Fig. 1 is a flow chart showing an example of a flow of a method for producing a glass sheet according to the present embodiment. The glass substrate to be produced is not particularly limited, and it is preferably, for example, a longitudinal dimension and a lateral dimension of 500 mm to 3500 mm, respectively. It is preferably a plate having a very thin rectangular shape in which the thickness of the glass substrate is 0.1 to 1.1 (mm), more preferably 0.75 mm or less.
首先,藉由例如熔融法或浮式法等公知之方法,將熔融後之玻璃成形為特定厚度之帶狀玻璃即平板玻璃(步驟S1)。 First, the molten glass is formed into a sheet glass which is a specific thickness of a sheet glass by a known method such as a melting method or a floating method (step S1).
其次,將所成形之平板玻璃板狀裁切為特定長度之素板即玻璃基板(步驟S2)。使藉由板狀裁切而獲得之玻璃基板與保護玻璃基板之片材體交替地積層而製作玻璃基板之積層體(步驟S3)。其次,對該玻璃基板之積層體進行熱處理(步驟S4)。該步驟S3之處理及步驟S4之處理為本實施形態之熱處理即退火步驟。關於退火步驟之詳細情況見下文。 Next, the formed flat glass plate is cut into a glass substrate which is a plain plate of a specific length (step S2). The glass substrate obtained by cutting the sheet and the sheet body of the protective glass substrate are alternately laminated to form a laminate of the glass substrate (step S3). Next, the laminated body of the glass substrate is subjected to heat treatment (step S4). The processing of the step S3 and the processing of the step S4 are the heat treatment, that is, the annealing step of the embodiment. See below for details on the annealing step.
熱處理後之玻璃基板被搬送至切斷步驟,並被切斷成製品之尺寸而獲得玻璃基板(步驟S5)。對所獲得之玻璃基板進行包含端面之研削、研磨及切角之端面加工後,將玻璃基板洗淨(步驟S6)。進行光學檢查,確認洗淨後之玻璃基板是否存在包含劃痕、灰塵、污垢或光學缺陷之損傷(步驟S7)。根據檢查而品質適宜之玻璃基板係以與保護玻璃基板之紙交替地積層而成之積層體之形式被堆載於托板而進行捆包(步驟S8)。所捆包之玻璃基板被出貨至交納目的地之業者。 The glass substrate after the heat treatment is transferred to the cutting step, and is cut into the size of the product to obtain a glass substrate (step S5). After the surface of the obtained glass substrate is subjected to grinding, polishing, and chamfering of the end surface, the glass substrate is washed (step S6). An optical inspection is performed to confirm whether or not the glass substrate after the cleaning has damage including scratches, dust, dirt, or optical defects (step S7). The glass substrate having a suitable quality according to the inspection is stacked on the pallet in the form of a laminate which is alternately laminated with the paper of the protective glass substrate, and is bundled (step S8). The bundled glass substrate is shipped to the owner of the destination.
作為此種玻璃基板,可例示以下玻璃組成之玻璃基板。即,以製造如下玻璃組成之玻璃基板之方式調製熔融玻璃之原料。 As such a glass substrate, a glass substrate having the following glass composition can be exemplified. That is, the raw material of the molten glass is prepared so as to produce a glass substrate having the following glass composition.
SiO2 5~80莫耳%、Al2O3 8~20莫耳%、B2O3 0~12莫耳%、RO 0~17莫耳%(RO為MgO、CaO、SrO及BaO之合計量)。 SiO 2 5~80 mol%, Al 2 O 3 8-20 mol%, B 2 O 3 0~12 mol%, RO 0~17 mol% (RO is the total of MgO, CaO, SrO and BaO the amount).
就減小熱收縮率之觀點而言,SiO2較佳為60~75莫耳%,進而較佳為63~72莫耳%。 From the viewpoint of reducing the heat shrinkage ratio, SiO 2 is preferably from 60 to 75 mol%, more preferably from 63 to 72 mol%.
RO中,較佳為MgO為0~10莫耳%,CaO為0~10莫耳%,SrO為0~10%,BaO為0~10%。 In RO, it is preferable that MgO is 0 to 10 mol%, CaO is 0 to 10 mol%, SrO is 0 to 10%, and BaO is 0 to 10%.
又,亦可為至少包含SiO2、Al2O3、B2O3、及RO且莫耳比 ((2×SiO2)+Al2O3)/((2×B2O3)+RO)為4.5以上之玻璃。又,較佳為包含MgO、CaO、SrO、及BaO之至少一者,且莫耳比(BaO+SrO)/RO為0.1以上。 Further, it may be at least SiO 2 , Al 2 O 3 , B 2 O 3 , and RO, and molar ratio ((2×SiO 2 )+Al 2 O 3 )/((2×B 2 O 3 )+ RO) is a glass of 4.5 or more. Further, it is preferable to contain at least one of MgO, CaO, SrO, and BaO, and the molar ratio (BaO+SrO)/RO is 0.1 or more.
又,較佳為莫耳%表示之B2O3之含有率之2倍與莫耳%表示之RO之含有率的合計為30莫耳%以下,較佳為10~30莫耳%。 Further, the total content of B 2 O 3 expressed by mol% and the content ratio of RO represented by mol% are preferably 30 mol% or less, preferably 10 to 30 mol%.
又,上述玻璃組成之玻璃基板中之鹼金屬氧化物之含有率亦可為0莫耳%以上且0.4莫耳%以下。 Further, the content of the alkali metal oxide in the glass substrate having the glass composition may be 0 mol% or more and 0.4 mol% or less.
又,玻璃中包含合計為0.05~1.5莫耳%之價數變動之金屬之氧化物(氧化錫、氧化鐵),且並非必須實質上不含As2O3、Sb2O3及PbO而為任意。 Further, the glass contains a metal oxide (tin oxide or iron oxide) having a total valence of 0.05 to 1.5 mol%, and does not necessarily contain substantially As 2 O 3 , Sb 2 O 3 and PbO. Any.
本實施形態中製造之玻璃基板適合作為顯示器用玻璃基板、例如平板顯示器用玻璃基板、液晶顯示器用玻璃基板、或有機EL顯示器用玻璃基板。 The glass substrate produced in the present embodiment is suitable as a glass substrate for a display, for example, a glass substrate for a flat panel display, a glass substrate for a liquid crystal display, or a glass substrate for an organic EL display.
進而,本實施形態中製造之玻璃基板尤其適合作為高精細顯示器所使用之LTPS(Low-temperature poly silicon,低溫多晶矽)-TFT(Thin Film Transistor,薄膜電晶體)顯示器用玻璃基板、或IGZO(Indium-Gallium-Zinc-Oxide,銦鎵鋅氧化物)等氧化物半導體-TFT顯示器用玻璃基板。 Further, the glass substrate produced in the present embodiment is particularly suitable as a glass substrate for a LTPS (Low-temperature polysilicon)-TFT (Thin Film Transistor) display used for a high-definition display, or IGZO (Indium). An oxide semiconductor such as -Gallium-Zinc-Oxide, indium gallium zinc oxide, or a glass substrate for TFT display.
作為本實施形態中之由熔融玻璃成形平板玻璃之方法,使用浮式法或熔融法等,但於本實施形態之包含玻璃基板之以離線方式進行之熱處理的玻璃基板之製造方法中,就於熔融法(溢流下拉法)中難以使生產線上之緩冷裝置較長之方面而言,適合熔融法。藉由本實施形態之熱處理而減小熱收縮率之前之玻璃基板之熱收縮率為80ppm以下,更佳為40ppm~60ppm。 In the method of forming a flat glass from molten glass in the present embodiment, a floating method, a melting method, or the like is used. However, in the method of manufacturing a glass substrate including a glass substrate which is subjected to heat treatment in an off-line manner in the present embodiment, In the melting method (overflow down-draw method), it is difficult to make the slow cooling device on the production line long, and it is suitable for the melting method. The heat shrinkage rate of the glass substrate before the heat shrinkage rate is reduced by the heat treatment of the present embodiment is 80 ppm or less, and more preferably 40 ppm to 60 ppm.
以下,對於本實施形態之退火步驟(第1、第2實施形態)進行說明。本實施形態中所述之離線退火係指脫離製造玻璃基板之生產線而 對所製造之玻璃基板進行退火。 Hereinafter, the annealing steps (first and second embodiments) of the present embodiment will be described. The off-line annealing described in this embodiment refers to a production line that is detached from the manufacture of a glass substrate. The glass substrate produced is annealed.
繼而,對第1實施形態之退火步驟進行詳細說明。 Next, the annealing step of the first embodiment will be described in detail.
首先,將步驟S2中所板狀裁切之複數片玻璃基板11與複數個片材體12交替地逐片積層而製作玻璃基板之積層體10(步驟S3)。於本實施形態中,記載了對積層複數片玻璃基板11而成之玻璃基板之積層體10進行熱處理之情形,但亦可為一面逐片地搬送玻璃基板11一面進行熱處理之單片方式之熱處理。又,亦可為如下方法:不積層玻璃基板11而使複數片玻璃基板11彼此隔開特定距離,從而對各玻璃基板11進行熱處理。 First, the plurality of glass substrates 11 cut in a sheet shape in the step S2 and the plurality of sheet bodies 12 are alternately laminated one by one to form a laminated body 10 of a glass substrate (step S3). In the present embodiment, the laminated body 10 of the glass substrate in which the plurality of glass substrates 11 are laminated is heat-treated. However, the heat treatment may be performed in a single-piece heat treatment in which the glass substrate 11 is conveyed one by one. . Further, a method may be employed in which the glass substrates 11 are heat-treated by not stacking the glass substrates 11 and separating the plurality of glass substrates 11 by a predetermined distance.
圖2係表示載置有玻璃基板之積層體10(以下,稱為積層體10)之托板20之一例的側視圖。此處,將圖2之紙面左方向設為托板20之前方向,將圖2之紙面右方向設為托板20之後方向。將圖2之紙面上方向設為上方向,將紙面下方向設為下方向。於托板20,以積層方向作為大致前後方向而載置積層體10。載置有積層體10之托板20被搬送至爐40內,並於爐40內對積層體10進行熱處理。爐40中設置有用以對爐40之環境(空氣)進行加熱之發熱裝置41,發熱裝置41成為熱源而對爐40之環境進行加熱。進行熱處理時,爐40內成為封閉空間,環境之熱被傳遞至積層體10,而使積層體10(玻璃基板11)之熱處理得以進行。此處,積層體10之積層方向無須與前後方向完全一致。例如於圖2所示般傾斜地立起玻璃基板11之情形時,積層方向與前後方向所成之角對應於玻璃基板11相對於上下方向傾斜之角。又,亦可以積層體10之積層方向成為上下方向之方式,將積層體10平放而載置於托板20。 FIG. 2 is a side view showing an example of the pallet 20 on which the laminated body 10 (hereinafter referred to as the laminated body 10) on which the glass substrate is placed. Here, the left direction of the paper surface of FIG. 2 is set to the front direction of the pallet 20, and the right direction of the paper surface of FIG. 2 is set to the direction behind the pallet 20. The paper surface direction of FIG. 2 is set to the upper direction, and the paper surface downward direction is set to the downward direction. In the pallet 20, the laminated body 10 is placed in the stacking direction as a substantially front-rear direction. The pallet 20 on which the laminated body 10 is placed is conveyed to the furnace 40, and the laminated body 10 is heat-processed in the furnace 40. The furnace 40 is provided with a heat generating device 41 for heating the environment (air) of the furnace 40, and the heat generating device 41 serves as a heat source to heat the environment of the furnace 40. When the heat treatment is performed, the inside of the furnace 40 becomes a closed space, and the heat of the environment is transmitted to the laminated body 10, and the heat treatment of the laminated body 10 (glass substrate 11) is performed. Here, the lamination direction of the laminated body 10 does not have to be completely coincident with the front-rear direction. For example, when the glass substrate 11 is erected obliquely as shown in FIG. 2, the angle formed by the lamination direction and the front-rear direction corresponds to an angle at which the glass substrate 11 is inclined with respect to the vertical direction. In addition, the laminated body 10 may be laid flat on the pallet 20 so that the laminated direction of the laminated body 10 may be the vertical direction.
托板20具備基台部21、載置部22、及背面板23等。 The pallet 20 includes a base portion 21, a mounting portion 22, a back panel 23, and the like.
基台部21、載置部22及背面板23例如包含鋼鐵等金屬,且藉由焊接等而一體地形成。 The base portion 21, the placing portion 22, and the back surface plate 23 include, for example, a metal such as steel, and are integrally formed by welding or the like.
基台21為大致長方形之板狀,於端面設置有用以供堆高機之爪插入之開口21a。 The base 21 has a substantially rectangular plate shape, and an opening 21a for inserting the claws of the stacker is provided on the end surface.
載置部22係固定於基台21之上部,且於載置部22之上部載置玻璃基板之積層體10。此處,載置部22之上表面無須完全水平。例如於圖2所示般將玻璃基板11傾斜地立起之情形時,亦可使載置部22之上表面對應於玻璃基板11之立起角度而傾斜。 The mounting portion 22 is fixed to the upper portion of the base 21, and the laminated body 10 of the glass substrate is placed on the upper portion of the mounting portion 22. Here, the upper surface of the placing portion 22 does not need to be completely horizontal. For example, when the glass substrate 11 is erected obliquely as shown in FIG. 2, the upper surface of the mounting portion 22 may be inclined in accordance with the rising angle of the glass substrate 11.
背面板23為大致長方形之板狀,且於基台21之上部,與載置部22大致垂直地固定於載置部22之後端。背面板23支持載置於載置部22之上部之積層體10之積層方向之後端部。此處,背面板23無須完全垂直。例如於圖2所示般將玻璃基板11傾斜地立起之情形時,亦可使背面板23對應於玻璃基板11之立起角度而傾斜。 The back panel 23 has a substantially rectangular plate shape, and is fixed to the rear end of the mounting portion 22 substantially perpendicularly to the mounting portion 22 on the upper portion of the base 21 . The back panel 23 supports the end portion after the lamination direction of the laminated body 10 placed on the upper portion of the mounting portion 22. Here, the back panel 23 does not have to be completely vertical. For example, when the glass substrate 11 is erected obliquely as shown in FIG. 2, the back surface plate 23 may be inclined in accordance with the rising angle of the glass substrate 11.
其次,對積層體10進行說明。積層體10具備複數片玻璃基板11、及複數個片材體12。 Next, the laminated body 10 will be described. The laminated body 10 includes a plurality of glass substrates 11 and a plurality of sheet bodies 12.
片材體12係夾於玻璃基板11彼此之間。片材體12發揮防止所積層之玻璃基板11彼此密接之作用。因此,藉由將玻璃基板11以夾於片材體之間之狀態於厚度方向積層複數片而形成玻璃基板之積層體10。片材體12可使用具有能耐受對積層體10進行熱處理時之溫度之耐熱性的材料。片材體12較佳為具有高於玻璃基板11之熱導率。 The sheet body 12 is sandwiched between the glass substrates 11 . The sheet body 12 serves to prevent the laminated glass substrates 11 from adhering to each other. Therefore, the laminated body 10 of the glass substrate is formed by laminating a plurality of sheets in the thickness direction in a state in which the glass substrate 11 is sandwiched between the sheet bodies. The sheet body 12 can be made of a material having heat resistance to withstand the temperature at which the laminated body 10 is subjected to heat treatment. The sheet body 12 preferably has a thermal conductivity higher than that of the glass substrate 11.
作為此種片材體12之材料,例如可選擇選自碳石墨、氧化鋁纖維、氧化矽纖維、及多孔質陶瓷中之一種、或其等之組合。 As a material of such a sheet body 12, for example, one selected from the group consisting of carbon graphite, alumina fiber, cerium oxide fiber, and porous ceramic, or a combination thereof can be selected.
為了提高玻璃基板11之面內方向之熱導率,較佳為片材體12之厚度較厚。另一方面,為了減小積層體10之體積,較佳為片材體12之厚度較薄。因此,片材體12之厚度較佳為0.02mm~2mm左右。就防止玻璃基板11彼此之密接之作用而言,片材體12之面積較佳為與玻璃基板11相同程度或大於玻璃基板11之面積。 In order to increase the thermal conductivity in the in-plane direction of the glass substrate 11, it is preferable that the thickness of the sheet body 12 is thick. On the other hand, in order to reduce the volume of the laminated body 10, it is preferable that the thickness of the sheet body 12 is thin. Therefore, the thickness of the sheet body 12 is preferably about 0.02 mm to 2 mm. The area of the sheet body 12 is preferably the same as or larger than the area of the glass substrate 11 in terms of preventing the glass substrates 11 from adhering to each other.
再者,亦可於任意複數片玻璃基板11之間,介置用以加熱積層體 10之加熱板來代替片材體12,或者將加熱板與片材體12一併介置。作為加熱板,例如可使用藉由電流之流動而發熱之電極板。於此情形時,電極板之電阻值根據電極板之溫度而發生變化,因此流過電極板之電流量根據電極板之溫度而發生變化。因此,可基於流過電極板之電流量而控制加熱板之溫度。藉此,可均等地調整複數片玻璃基板11間之熱分佈。 Furthermore, it is also possible to intervene between any plurality of glass substrates 11 for heating the laminated body. A heating plate of 10 is used instead of the sheet body 12, or the heating plate is placed together with the sheet body 12. As the heating plate, for example, an electrode plate that generates heat by the flow of a current can be used. In this case, the resistance value of the electrode plate changes depending on the temperature of the electrode plate, and therefore the amount of current flowing through the electrode plate changes depending on the temperature of the electrode plate. Therefore, the temperature of the heating plate can be controlled based on the amount of current flowing through the electrode plates. Thereby, the heat distribution between the plurality of glass substrates 11 can be uniformly adjusted.
又,作為片材體12,亦可使用再生紙、紙漿紙。 Further, as the sheet body 12, recycled paper or pulp paper can also be used.
於本實施形態中,於由1對絕熱板15a、15b夾持上述積層體10之狀態.下對積層體10進行熱處理。 In the present embodiment, the laminated body 10 is heat-treated in a state in which the laminated body 10 is sandwiched between the pair of heat insulating plates 15a and 15b.
1對絕熱板15a、15b係配置於積層體10之積層方向之兩端部。圖2中,將絕熱板15a配置於後端部,將絕熱板15b配置於前端部。絕熱材15a、15b包含熱導率低於玻璃基板之材料。作為熱導率低於玻璃基板之材料,例如可選擇選自陶瓷、氧化鋁、氧化矽、及岩絨中之一種、或其等之組合。 The pair of heat insulating plates 15a and 15b are disposed at both end portions of the laminated body 10 in the stacking direction. In Fig. 2, the heat insulating plate 15a is disposed at the rear end portion, and the heat insulating plate 15b is disposed at the front end portion. The heat insulating members 15a and 15b contain a material having a lower thermal conductivity than the glass substrate. As the material having a thermal conductivity lower than that of the glass substrate, for example, one selected from the group consisting of ceramics, alumina, cerium oxide, and rock wool, or a combination thereof may be selected.
為了維持絕熱性能,絕熱板15a、15b之熱阻較佳為0.1℃/W以上。另一方面,為了不妨礙對配置於積層體10之端部之玻璃基板11進行之加熱及冷卻,絕熱板15a、15b之熱阻較佳為10℃/W以下。為了維持絕熱性能,較佳為絕熱板15a、15b之厚度較厚。另一方面,為了減小積層體10之體積,較佳為絕熱板15a、15b之厚度較薄。因此,絕熱板15a、15b之厚度較佳為10~50mm左右。就防止自積層體之積層方向之外側朝端部之玻璃基板11彼此密接之作用而言,絕熱板15a、15b之面積較佳為與玻璃基板11相同程度或大於玻璃基板11之面積。 In order to maintain the heat insulating performance, the heat resistance of the heat insulating plates 15a, 15b is preferably 0.1 ° C / W or more. On the other hand, the thermal resistance of the heat insulating plates 15a and 15b is preferably 10 ° C / W or less in order not to hinder the heating and cooling of the glass substrate 11 disposed at the end portion of the laminated body 10 . In order to maintain the heat insulating property, it is preferable that the thickness of the heat insulating plates 15a, 15b is thick. On the other hand, in order to reduce the volume of the laminated body 10, it is preferable that the thickness of the heat insulating sheets 15a and 15b is thin. Therefore, the thickness of the heat insulating plates 15a and 15b is preferably about 10 to 50 mm. The area of the heat insulating plates 15a and 15b is preferably the same as or larger than the area of the glass substrate 11 in order to prevent the glass substrates 11 from the outer side of the lamination direction from being in close contact with each other.
若由絕熱板15a、15b將積層體10之積層方向之兩端部夾入,則位於積層體10之前端(前端部)之玻璃基板11會抑制自環境經由該玻璃基板11之主表面流至玻璃基板11之熱,可設為與自位於玻璃基板11之積層方向中央之玻璃基板11之主表面之面方向外側流動之熱傳導的形態 相同之形態。即,於所積層之所有玻璃基板11中,熱自玻璃基板11之包含邊緣之端部區域進入,並朝向由端部區域包圍之中央區域傳遞熱。其結果,對所積層之複數片玻璃基板11,可於厚度方向使熱分佈均等。 When the both ends of the laminated body 10 in the laminating direction are sandwiched by the heat insulating sheets 15a and 15b, the glass substrate 11 located at the front end (front end portion) of the laminated body 10 is prevented from flowing from the environment to the main surface of the glass substrate 11 to the main surface. The heat of the glass substrate 11 can be a heat conduction pattern that flows outward from the surface of the main surface of the glass substrate 11 located in the center of the laminated direction of the glass substrate 11. The same form. That is, in all of the glass substrates 11 of the laminated layer, heat enters from the end portion including the edge of the glass substrate 11, and heat is transferred toward the central region surrounded by the end portion. As a result, the heat distribution of the plurality of laminated glass substrates 11 can be made uniform in the thickness direction.
其次,對步驟S4之熱處理進行說明。 Next, the heat treatment of step S4 will be described.
以脫離生產線之離線之方式對利用步驟S3之處理所製作之積層體10進行熱處理。該熱處理中,一面使玻璃基板之積層體旋轉一面於特定之溫度環境下放置特定時間,使玻璃基板之端部區域至由端部區域包圍之中央區域之熱分佈一致,藉此以使端部區域至中央區域之應變分佈變得一致之方式進行調整。 The layered body 10 produced by the process of step S3 is heat-treated in a manner that is off-line from the production line. In the heat treatment, the laminated body of the glass substrate is placed in a specific temperature environment for a specific period of time, and the heat distribution of the end portion of the glass substrate to the central portion surrounded by the end portion is made uniform, thereby making the end portion The strain distribution from the region to the central region is adjusted in such a manner that the strain distribution becomes uniform.
具體而言,將載置有上述積層體10之托板20搬入至進行熱處理之爐40,並控制發熱裝置41之動作而對爐40內之空氣(環境)進行加熱,藉此對玻璃基板11進行熱處理。 Specifically, the tray 20 on which the stacked body 10 is placed is carried into the furnace 40 for heat treatment, and the operation of the heat generating device 41 is controlled to heat the air (environment) in the furnace 40, thereby heating the glass substrate 11 Heat treatment is performed.
就降低熱收縮率、使玻璃基板之應變分佈一致之方面而言,熱處理之溫度較佳為處於玻璃基板11之應變點-60℃之溫度至應變點-260℃之溫度的溫度範圍。此處,所謂應變點係指普通玻璃之應變點,為相當於1014.5泊之黏度之溫度。熱處理之時間例如為0.5~120小時。熱處理時之環境中之溫度之時間歷程並無特別限制,環境之溫度處於應變點-560℃之溫度至處於應變點之溫度範圍的時間至少為0.5小時、較佳為1小時以上即可。若未達0.5小時1小時,則熱收縮率不會充分減小,若長於120小時,則雖然熱收縮率充分減小,但玻璃基板11之生產效率降低。 The heat treatment temperature is preferably in a temperature range from a strain point of the glass substrate 11 of -60 ° C to a temperature of a strain point of -260 ° C in terms of lowering the heat shrinkage rate and making the strain distribution of the glass substrate uniform. Here, the strain point refers to the strain point of ordinary glass, which is a temperature equivalent to a viscosity of 10 14.5 poise. The heat treatment time is, for example, 0.5 to 120 hours. The time history of the temperature in the environment during the heat treatment is not particularly limited, and the temperature of the environment is at a temperature of from -560 ° C at the strain point to a temperature in the range of the strain point of at least 0.5 hours, preferably at least 1 hour. If the temperature is less than 0.5 hour and 1 hour, the heat shrinkage rate is not sufficiently reduced. When the temperature is longer than 120 hours, the heat shrinkage rate is sufficiently reduced, but the production efficiency of the glass substrate 11 is lowered.
再者,應變點根據玻璃之種類而不同,為了減小熱收縮,玻璃基板11較佳為具有應變點較高之玻璃組成,玻璃基板11之玻璃之應變點較佳為600℃以上,更佳為655℃以上,例如為661℃。於此情形時,熱處理溫度為應變點(661℃)-(60℃~260℃)=601℃~401℃。為 了減小玻璃基板11之熱收縮而製成高精細顯示器用玻璃基板,並不限定於上述溫度範圍,例如,熱處理時之最高溫度、即熱處理溫度可為250℃~700℃,又,亦可為300℃~600℃,又,可為350℃~600℃,亦可為400℃~550℃。 Further, the strain point varies depending on the type of the glass. In order to reduce the heat shrinkage, the glass substrate 11 preferably has a glass composition having a higher strain point, and the glass substrate 11 has a strain point of preferably 600 ° C or more. It is 655 ° C or more, for example, 661 ° C. In this case, the heat treatment temperature is a strain point (661 ° C) - (60 ° C ~ 260 ° C) = 601 ° C ~ 401 ° C. for The glass substrate for high-definition display is reduced in heat shrinkage of the glass substrate 11, and is not limited to the above temperature range. For example, the maximum temperature during heat treatment, that is, the heat treatment temperature may be 250 ° C to 700 ° C, or It is 300 ° C ~ 600 ° C, and can be 350 ° C ~ 600 ° C, or 400 ° C ~ 550 ° C.
暴露玻璃基板之積層體之高溫環境並無特別限制,可為含氧率為5~50%之環境,亦可為例如由空氣構成之大氣環境。 The high temperature environment in which the laminate of the glass substrate is exposed is not particularly limited, and may be an environment having an oxygen content of 5 to 50%, or an atmospheric environment such as air.
圖3(a)、(b)係表示於玻璃基板11上之各位置之熱歷程之一例的圖。此處,熱歷程係表示因熱處理而發生變化之玻璃基板11之溫度之歷程。若將玻璃基板11之積層體10搬入至進行熱處理之爐40,並使爐40內之環境溫度上升,則環境之熱自積層體10之積層方向之外側傳遞至玻璃基板11。玻璃基板11之包含邊緣之邊緣區域11a自高溫之環境接受熱傳導,而較玻璃基板11之由邊緣區域11a包圍之中央區域11b更快地升溫。又,對環境降溫,將高溫狀態之玻璃基板11之邊緣區域11a暴露於成為低溫之環境而散熱,從而較玻璃基板11之中央區域11b更快地降溫。因此,如圖3(a)、(b)所示,於玻璃基板11上,點A周邊較點B周邊更快地升溫、降溫。若如此於熱歷程中產生差值,則自邊緣區域11a至中央區域11b(自點A周邊至點B周邊),熱收縮率不同而產生拉伸及壓縮應力,因此產生應變。為了使於玻璃基板11面內之熱收縮率均勻而抑制應變之產生,而必須消除玻璃基板11之邊緣區域11a至中央區域11b之溫度變化差,即,需要減小熱歷程差。 3(a) and 3(b) are views showing an example of a thermal history at each position on the glass substrate 11. Here, the thermal history indicates the history of the temperature of the glass substrate 11 which changes due to the heat treatment. When the laminated body 10 of the glass substrate 11 is carried into the furnace 40 for heat treatment, and the ambient temperature in the furnace 40 is raised, the heat of the environment is transmitted to the glass substrate 11 from the outer side in the lamination direction of the laminated body 10. The edge region 11a of the glass substrate 11 including the edge receives heat conduction from a high temperature environment, and heats up faster than the central region 11b of the glass substrate 11 surrounded by the edge region 11a. Further, the ambient temperature is lowered, and the edge region 11a of the glass substrate 11 in a high temperature state is exposed to a low temperature environment to dissipate heat, thereby lowering the temperature faster than the central region 11b of the glass substrate 11. Therefore, as shown in FIGS. 3(a) and 3(b), on the glass substrate 11, the periphery of the point A is heated and cooled more rapidly than the periphery of the point B. If a difference occurs in the thermal history, the tensile stress and the compressive stress are generated from the edge region 11a to the central region 11b (from the periphery of the point A to the periphery of the point B), and strain is generated. In order to make the heat shrinkage rate in the plane of the glass substrate 11 uniform and suppress the occurrence of strain, it is necessary to eliminate the temperature variation difference between the edge region 11a of the glass substrate 11 and the central region 11b, that is, it is necessary to reduce the thermal history difference.
此處,將由LTPS、IGZO構成之半導體層形成於玻璃基板11之溫度為400℃~600℃(於應變點為661℃之情形時為較應變點低約60℃~260℃之溫度),因此只要能降低該溫度範圍內之玻璃基板11之熱收縮率即可。因此,於本實施形態中,以使玻璃基板11之點A及點B周邊之最高溫度成為400℃~600℃之溫度範圍之方式進行熱處理。熱收縮率不僅隨著對玻璃基板11進行熱處理時之最高溫度發生變化,亦隨著 熱歷程而變化。尤其是如圖3(b)所示,自作為熱處理時之最高溫度之熱處理溫度(例如,500℃)至較熱處理溫度低50℃~300℃之溫度(例如,450℃~200℃)的熱歷程對熱收縮率之影響較大。關於熱收縮率,藉由以評價熱收縮率之溫度、此處為將由LTPS、IGZO構成之半導體層形成於玻璃基板11之溫度即例如400℃~500℃進行熱處理,而於該溫度區域中減小熱收縮率。又,於該溫度區域400℃~500℃以下之溫度區域中,熱收縮亦降低。即,於接近評價熱收縮率之溫度的溫度下,對熱收縮率之影響較大,越偏離該溫度,對熱收縮率之影響越小。因此,於本實施形態中,於作為熱處理時之最高溫度之熱處理溫度至成為低50℃~300℃之溫度之溫度區域中進行熱處理以使玻璃基板11之面方向上之熱歷程差得以抑制。圖3(b)示出了300℃~500℃之溫度範圍內之熱歷程差。藉由減小玻璃基板11之邊緣區域11a(點A周邊)與中央區域11b(點B周邊)之熱歷程差(圖3(b)中之面積D),可抑制玻璃基板11面上之熱收縮率之不均,而抑制應變之產生。 Here, the semiconductor layer made of LTPS or IGZO is formed on the glass substrate 11 at a temperature of 400 ° C to 600 ° C (at a strain point of 661 ° C, which is a temperature lower than the strain point by about 60 ° C to 260 ° C), It suffices that the heat shrinkage rate of the glass substrate 11 in this temperature range can be lowered. Therefore, in the present embodiment, heat treatment is performed so that the maximum temperature around the point A and the point B of the glass substrate 11 is in the temperature range of 400 ° C to 600 ° C. The heat shrinkage rate changes not only with the highest temperature when the glass substrate 11 is heat-treated, but also with The heat history changes. In particular, as shown in FIG. 3(b), heat from a heat treatment temperature (for example, 500 ° C) which is the highest temperature at the time of heat treatment to a temperature lower than the heat treatment temperature by 50 ° C to 300 ° C (for example, 450 ° C to 200 ° C) The history has a greater impact on the heat shrinkage rate. The heat shrinkage rate is heat-treated in the temperature region by heat treatment at a temperature at which the heat shrinkage rate is evaluated, in which the semiconductor layer composed of LTPS or IGZO is formed on the glass substrate 11, that is, for example, 400 ° C to 500 ° C. Small heat shrinkage rate. Further, in the temperature region of the temperature region of 400 ° C to 500 ° C or less, the heat shrinkage is also lowered. That is, the influence on the heat shrinkage rate is large at a temperature close to the temperature at which the heat shrinkage rate is evaluated, and the smaller the temperature is, the smaller the influence on the heat shrinkage rate is. Therefore, in the present embodiment, heat treatment is performed in a temperature range which is a heat treatment temperature at the highest temperature during heat treatment to a temperature lower than 50 ° C to 300 ° C to suppress a thermal history difference in the surface direction of the glass substrate 11 . Fig. 3(b) shows the thermal history difference in the temperature range of 300 °C to 500 °C. By reducing the thermal history difference (the area D in FIG. 3(b)) between the edge region 11a (the periphery of the dot A) of the glass substrate 11 and the central region 11b (the periphery of the dot B), the heat on the surface of the glass substrate 11 can be suppressed. The shrinkage rate is uneven, and the generation of strain is suppressed.
由點A之熱歷程與點B之熱歷程之差所形成之面積D越小,則應變之值越小。圖4係表示揭示熱歷程差之面積與應變之關係之一例的圖表。如該圖所示,於使應變為2kgf/cm2以下之情形時,以面積成為D1以下之方式對玻璃基板11進行熱處理。又,於使應變為4kgf/cm2以下之情形時,以使面積成為D2以下之方式對玻璃基板11進行熱處理,於使應變為9kgf/cm2以下之情形時,以使面積成為D3以下之方式對玻璃基板11進行熱處理。面積D1~D3之值對應於時間×溫度之單位。面積D1~D3之值可根據玻璃基板11之大小、厚度、組成等而任意地變更。藉此,亦可根據製造高精細顯示器之面板時所要求之應變之容許值而適當變更玻璃基板11於熱處理中之溫度、時間。 The smaller the area D formed by the difference between the thermal history of point A and the thermal history of point B, the smaller the value of strain. Fig. 4 is a graph showing an example of the relationship between the area of the heat history difference and the strain. As shown in the figure, when the strain is 2 kgf/cm 2 or less, the glass substrate 11 is heat-treated so that the area becomes D1 or less. When the strain is 4 kgf/cm 2 or less, the glass substrate 11 is heat-treated so that the area is D2 or less, and when the strain is 9 kgf/cm 2 or less, the area is made D3 or less. The glass substrate 11 is heat treated in a manner. The values of the areas D1 to D3 correspond to the units of time x temperature. The values of the areas D1 to D3 can be arbitrarily changed in accordance with the size, thickness, composition, and the like of the glass substrate 11. Thereby, the temperature and time of the glass substrate 11 in the heat treatment can be appropriately changed according to the allowable value of the strain required when manufacturing the panel of the high-definition display.
又,以使玻璃基板11之中央區域11b(點B周邊)之溫度達到與邊緣區域11a(點A周邊)之溫度相同之最高溫度之方式進行熱處理。藉由玻 璃基板11之中央區域11b(點B周邊)之溫度達到最高溫度,邊緣區域11a(點A周邊)與中央區域11b(點B周邊)之熱收縮率差變小,可減少應變之產生。中央區域11b(點B周邊)之溫度持續(保持)最高溫度之時間為任意,例如為0.5小時~4小時,更佳為1小時~2小時。為了達成特定之熱收縮率,以使邊緣區域11a(點A周邊)至中央區域11b(點B周邊)之玻璃基板11之溫度達到最高溫度之方式進行熱處理,為了抑制應變之產生,以使玻璃基板11中之面方向上之熱歷程差變小之方式進行熱處理。 Further, heat treatment is performed so that the temperature of the central region 11b (around the point B) of the glass substrate 11 reaches the highest temperature which is the same as the temperature of the edge region 11a (around the point A). By glass The temperature of the central region 11b (around the point B) of the glass substrate 11 reaches the maximum temperature, and the difference in thermal shrinkage ratio between the edge region 11a (around the point A) and the central region 11b (around the point B) becomes small, and the occurrence of strain can be reduced. The time during which the temperature of the central region 11b (around point B) continues (holds) the maximum temperature is arbitrary, and is, for example, 0.5 hours to 4 hours, more preferably 1 hour to 2 hours. In order to achieve a specific heat shrinkage rate, heat treatment is performed in such a manner that the temperature of the glass substrate 11 of the edge region 11a (around the periphery of the point A) to the central region 11b (the periphery of the dot B) reaches the highest temperature, in order to suppress the generation of strain to make the glass The heat treatment is performed in such a manner that the difference in thermal history in the surface direction of the substrate 11 becomes small.
圖5係表示對玻璃基板進行熱處理時之溫度分佈之一例的圖。如上所述,熱處理時之最高溫度即熱處理溫度(例如,較應變點低60℃~260℃之溫度)至較上述熱處理溫度低50℃~300℃之中間溫度的熱歷程對熱收縮率之影響較大。為了於所積層之玻璃基板11中抑制該溫度範圍內之熱歷程差,需要使中間溫度至最高溫度之速度(溫度梯度)較室溫至中間溫度之速度(溫度梯度)慢(平緩)。圖5中,對熱收縮之影響較小之溫度區域Tm1~Tm2中之升溫速度S1為(Tm2-Tm1)/(t1-t0),對熱收縮之影響較大之溫度區域Tm2~Tm3中之升溫速度S2為(Tm3-Tm2)/(t2-t1),最高溫度區域Tm3中之速度S3為(Tm3-Tm3)/(t3-t2)=0,對熱收縮之影響較大之溫度區域Tm3~Tm2中之降溫速度S4為(Tm2-Tm3)/(t4-t3),對熱收縮之影響較小之溫度區域Tm2~Tm1中之降溫速度S5為(Tm1-Tm2)/(t5-t4)。此處,溫度為Tm1<Tm2<Tm3,Tm1=室溫(例如,25℃),Tm2=中間溫度(例如,300℃),Tm3=最高溫度(例如,500℃)。此處,室溫並不限定於25℃,例如為1℃~30℃。又,最高溫度並不限定於500℃,可為應變點-(60℃~260℃)之任意溫度,中間溫度並不限定於300℃,可為最高溫度-(50℃~300℃)之任意溫度。中間溫度隨最高溫度而變化,但亦可將最高溫度設為應變點-(60℃~260℃)之範圍之溫度,將中間溫度固定為300℃。於此情形時,最高溫度至300℃之升溫 /冷卻速度較300℃至25℃之升溫/冷卻速度慢。又,升溫速度/降溫速度係對玻璃基板11整體進行升溫/降溫之平均速度。 Fig. 5 is a view showing an example of a temperature distribution when a glass substrate is subjected to heat treatment. As described above, the heat history at the highest temperature during heat treatment, that is, the heat treatment temperature (for example, a temperature lower than the strain point of 60 ° C to 260 ° C) to an intermediate temperature lower than the above heat treatment temperature by 50 ° C to 300 ° C, affects the heat shrinkage rate. Larger. In order to suppress the thermal history difference in the temperature range in the laminated glass substrate 11, it is necessary to make the intermediate temperature to the highest temperature (temperature gradient) slower (smooth) than the room temperature to the intermediate temperature (temperature gradient). In Fig. 5, the temperature increase rate S1 in the temperature region Tm1 to Tm2 having a small influence on the heat shrinkage is (Tm2-Tm1)/(t1-t0), and the temperature region Tm2 to Tm3 having a large influence on the heat shrinkage is The heating rate S2 is (Tm3-Tm2)/(t2-t1), and the speed S3 in the highest temperature region Tm3 is (Tm3-Tm3)/(t3-t2)=0, and the temperature region Tm3 having a large influence on the heat shrinkage The cooling rate S4 in ~Tm2 is (Tm2-Tm3)/(t4-t3), and the cooling rate S5 in the temperature region Tm2~Tm1 with less influence on heat shrinkage is (Tm1-Tm2)/(t5-t4) . Here, the temperature is Tm1 < Tm2 < Tm3, Tm1 = room temperature (for example, 25 ° C), Tm2 = intermediate temperature (for example, 300 ° C), and Tm3 = maximum temperature (for example, 500 ° C). Here, the room temperature is not limited to 25 ° C, for example, 1 ° C to 30 ° C. Further, the maximum temperature is not limited to 500 ° C, and may be any temperature of the strain point - (60 ° C to 260 ° C), the intermediate temperature is not limited to 300 ° C, and may be the highest temperature - (50 ° C ~ 300 ° C) temperature. The intermediate temperature varies with the maximum temperature, but the maximum temperature can also be set to the temperature in the range of strain point - (60 ° C ~ 260 ° C), and the intermediate temperature is fixed to 300 ° C. In this case, the maximum temperature rises to 300 ° C / Cooling rate is slower than 300 ° C to 25 ° C heating / cooling rate. Further, the temperature increase rate and the temperature decrease rate are average speeds at which the entire temperature of the glass substrate 11 is raised and lowered.
於升溫時間t0~t2,以使對熱收縮之影響較大之溫度區域Tm2~Tm3內之升溫速度S2成為升溫速度S1>升溫速度S2之方式對積層體10進行加熱處理。對熱收縮之影響較小之溫度區域內之升溫速度S1例如為60℃/h~300℃/h,更佳為80℃/h~250℃/h,對熱收縮之影響較大之溫度區域內之升溫速度S2例如為20℃/h~60℃/h,更佳為20℃/h~40℃/h。維持最高溫度Tm3之時間t3-t2例如為0.5小時~4小時,較佳為1~4小時,更佳為1小時~2小時。又,於降溫時間t3~t5,以使對熱收縮之影響較大之溫度區域Tm2~Tm3內之降溫速度S4以降溫速度之絕對值計成為降溫速度S5>降溫速度S4之方式對積層體10進行冷卻(散熱)處理。對熱收縮之影響較大之溫度區域內之降溫速度S4例如為-20℃/h~-60℃/h,更佳為-20℃/h~-40℃/h,對熱收縮之影響較小之溫度區域內之降溫速度S5例如為-60℃/h~-300℃/h,更佳為-80℃/h~-250℃/h。又,關於熱收縮,降溫時之影響較升溫時之影響大,因此亦可將速度之絕對值設為S2>S4,而使降溫速度S4較升溫速度S2慢。又,亦可以使升溫速度S1與升溫速度S2之平均速度AS1較降溫速度S3與降溫速度S4之平均速度AS2快之方式、即以成為平均速度AS1>平均速度AS2之方式使降溫速度變慢。於因對熱收縮之影響較小而不易產生應變之Tm2至Tm1(室溫)之溫度區域內使升溫速度、降溫速度變快而縮短升溫時間、降溫時間,藉此縮短對積層體10進行熱處理、冷卻處理之時間。藉此,於對熱收縮率降低之影響較小之溫度區域Tm1~Tm2中,可縮短熱處理時間,提高玻璃基板11之生產效率。另一方面,於因對熱收縮之影響較大而容易產生應變之中間溫度至熱處理時之最高溫度即熱處理溫度之溫度區域Tm2~Tm3中,使升溫速度、降溫速度變慢而延長升溫時間、降溫時間,藉此抑制應變之產生。藉此,可減少玻璃 基板11之熱收縮率之不均並且抑制應變之產生,進而,可提高玻璃基板11之生產效率。 In the temperature rise time t0 to t2, the laminated body 10 is heat-treated so that the temperature increase rate S2 in the temperature regions Tm2 to Tm3 having a large influence on the heat shrinkage becomes the temperature increase rate S1 > the temperature increase rate S2. The temperature increase rate S1 in the temperature region where the influence on the heat shrinkage is small is, for example, 60 ° C / h to 300 ° C / h, more preferably 80 ° C / h ~ 250 ° C / h, and the temperature region having a large influence on the heat shrinkage The internal temperature increase rate S2 is, for example, 20 ° C / h to 60 ° C / h, more preferably 20 ° C / h ~ 40 ° C / h. The time t3-t2 at which the maximum temperature Tm3 is maintained is, for example, 0.5 hours to 4 hours, preferably 1 to 4 hours, more preferably 1 hour to 2 hours. Further, at the temperature drop time t3 to t5, the temperature drop rate S4 in the temperature regions Tm2 to Tm3 having a large influence on the heat shrinkage is determined as the temperature drop rate S5 > the temperature drop rate S4 by the absolute value of the temperature drop rate. Perform cooling (heat dissipation) processing. The cooling rate S4 in the temperature region where the influence on the heat shrinkage is large is, for example, -20 ° C / h ~ -60 ° C / h, more preferably -20 ° C / h ~ -40 ° C / h, the effect on heat shrinkage is more The temperature drop rate S5 in the small temperature region is, for example, -60 ° C / h to -300 ° C / h, more preferably - 80 ° C / h ~ -250 ° C / h. Further, with regard to heat shrinkage, the influence at the time of temperature drop is greater than the influence at the time of temperature rise. Therefore, the absolute value of the speed can be set to S2>S4, and the temperature drop rate S4 can be made slower than the temperature increase rate S2. Further, the temperature increase rate S1 and the average speed AS1 of the temperature increase rate S2 may be made slower than the average speed AS2 of the temperature drop rate S3 and the temperature drop rate S4, that is, the average speed AS1>the average speed AS2. In the temperature region of Tm2 to Tm1 (room temperature) which is less likely to cause strain due to heat shrinkage, the temperature increase rate and the temperature decrease rate are increased, and the temperature rise time and the temperature decrease time are shortened, thereby shortening the heat treatment of the laminated body 10. , the time of cooling treatment. Thereby, in the temperature regions Tm1 to Tm2 having a small influence on the reduction in the heat shrinkage rate, the heat treatment time can be shortened, and the production efficiency of the glass substrate 11 can be improved. On the other hand, in the temperature range Tm2 to Tm3 which is the intermediate temperature which is likely to cause strain due to the influence of heat shrinkage to the highest temperature during heat treatment, that is, the heat treatment temperature, the temperature increase rate and the temperature decrease rate are slowed, and the temperature rise time is prolonged. The cooling time, thereby suppressing the generation of strain. Thereby, the glass can be reduced The substrate 11 has uneven heat shrinkage rate and suppresses generation of strain, and further, the production efficiency of the glass substrate 11 can be improved.
於熱自設置於爐40內之熱源傳遞至玻璃基板11之邊緣區域11a(點A周邊)之時間、及熱自熱源傳遞至中央區域11b(點B周邊)為止之時間內,如圖3(b)所示,熱自熱源經由邊緣區域11a(點A周邊)而傳遞至中央區域11b(點B周邊)為止之時間更為耗時。因此,於熱傳遞至邊緣區域11a(點A周邊)之時間後、即邊緣區域11a(點A周邊)成為中間溫度300℃後,使升溫速度較邊緣區域11a(點A周邊)自室溫成為中間溫度300℃為止之升溫速度慢(使溫度梯度平緩)。藉由使升溫速度變慢,而抑制邊緣區域11a(點A周邊)被熱源所加熱之速度,確保熱自邊緣區域11a(點A周邊)傳遞至中央區域11b(點B周邊)之時間,藉此,點A之熱歷程與點B之熱歷程之差變小。又,關於散熱,亦為自中央區域11b(點B周邊)經由邊緣區域11a(點A周邊)散熱之散熱時間較自區域11a(點A周邊)散熱之時間長。因此,邊緣區域11a(點A周邊)冷卻(散熱)至中間溫度300℃後,使降溫速度較邊緣區域11a(點A周邊)自最高溫度成為中間溫度300℃為止之降溫速度慢。藉由此種加熱處理/冷卻處理,可確保熱自邊緣區域11a(點A周邊)傳遞至中央區域11b(點B周邊)之時間,又,可確保將中央區域11b(點B周邊)冷卻之時間,可抑制對熱收縮造成之影響較大之中間溫度至最高溫度(300℃~500℃)之溫度區域內之熱歷程差。 The time during which heat is transferred from the heat source provided in the furnace 40 to the edge region 11a (around the point A) of the glass substrate 11 and the time when the heat is transferred from the heat source to the central region 11b (the periphery of the point B) is as shown in FIG. 3 ( b), the time from the heat source passing through the edge region 11a (around point A) to the central region 11b (around point B) is more time consuming. Therefore, after the time of heat transfer to the edge region 11a (around the point A), that is, the edge region 11a (around the point A) becomes an intermediate temperature of 300 ° C, the temperature increase rate is made intermediate from the room temperature to the edge region 11a (around the point A). The temperature rise rate is slow at 300 ° C (the temperature gradient is gentle). By slowing down the temperature increase rate, the speed at which the edge region 11a (around point A) is heated by the heat source is suppressed, and the time during which heat is transferred from the edge region 11a (around point A) to the central region 11b (around point B) is secured. Therefore, the difference between the thermal history of point A and the thermal history of point B becomes small. Further, regarding the heat dissipation, the heat dissipation time from the central region 11b (around the point B) via the edge region 11a (around the point A) is longer than the heat dissipation time from the region 11a (around the point A). Therefore, after the edge region 11a (around point A) is cooled (dissipated) to an intermediate temperature of 300 ° C, the temperature drop rate is slower than the edge region 11a (around point A) from the highest temperature to the intermediate temperature of 300 ° C. By such heat treatment/cooling treatment, it is possible to ensure the time during which heat is transmitted from the edge region 11a (around point A) to the central region 11b (around point B), and it is ensured that the central region 11b (around point B) is cooled. The time can suppress the thermal history difference in the temperature range from the intermediate temperature to the highest temperature (300 ° C ~ 500 ° C) which has a great influence on the heat shrinkage.
藉由此種熱處理,可將玻璃基板11之熱收縮率設為0~15ppm。玻璃基板11之熱收縮率較佳為設為0~12ppm,更佳為設為0~6ppm。此種熱收縮率可藉由對玻璃基板之玻璃組成、熱處理之溫度及熱處理時間進行調整而達成。 By such heat treatment, the heat shrinkage rate of the glass substrate 11 can be set to 0 to 15 ppm. The heat shrinkage rate of the glass substrate 11 is preferably from 0 to 12 ppm, more preferably from 0 to 6 ppm. Such a heat shrinkage rate can be achieved by adjusting the glass composition of the glass substrate, the temperature of the heat treatment, and the heat treatment time.
於本實施形態中,於由熱導率低於玻璃基板11之1對絕熱板15a、15b,於積層方向夾著玻璃基板11之積層體10之狀態下,將積層體10 搬入至進行熱處理之爐40,並使爐40內之環境溫度上升。關於爐40內之環境之溫度梯度,藉由使300℃至500℃之溫度梯度較室溫至300℃之溫度梯度平緩,可使複數片玻璃基板11間之熱分佈一致。因此,可降低熱處理後之各玻璃基板11之熱收縮率之不均。 In the present embodiment, the laminated body 10 is placed in a state in which the laminated body 10 of the glass substrate 11 is sandwiched between the pair of heat insulating plates 15a and 15b having a lower thermal conductivity than the glass substrate 11 in the lamination direction. The furnace 40 is carried into the heat treatment, and the ambient temperature in the furnace 40 is raised. Regarding the temperature gradient of the environment in the furnace 40, the heat distribution between the plurality of glass substrates 11 can be made uniform by making the temperature gradient from 300 ° C to 500 ° C gentler than the temperature gradient from room temperature to 300 ° C. Therefore, the unevenness of the heat shrinkage rate of each of the glass substrates 11 after the heat treatment can be reduced.
此處,亦可將加熱板配置於積層體10之積層方向之任意位置,並以使複數片玻璃基板11間之熱分佈變得一致之方式利用加熱板對積層體10進行加熱。 In this case, the heating plate may be placed at any position in the lamination direction of the laminated body 10, and the laminated body 10 may be heated by the heating plate so that the heat distribution between the plurality of glass substrates 11 is uniform.
進而,藉由使用具有高於玻璃基板11之熱導率之材料作為片材體12,可促進玻璃基板11之面內方向之傳熱,而使玻璃基板11之端部區域及中央區域之熱分佈一致。因此,玻璃基板11之面方向上之熱收縮率之不均得到抑制,因熱收縮率之差而產生之應變之產生亦得到抑制,可使玻璃基板之應變分佈一致。 Further, by using a material having a thermal conductivity higher than that of the glass substrate 11 as the sheet body 12, heat transfer in the in-plane direction of the glass substrate 11 can be promoted, and heat of the end portion and the central portion of the glass substrate 11 can be promoted. The distribution is consistent. Therefore, the unevenness of the heat shrinkage rate in the surface direction of the glass substrate 11 is suppressed, and the occurrence of strain due to the difference in the heat shrinkage rate is also suppressed, and the strain distribution of the glass substrate can be made uniform.
又,於對玻璃基板11逐片地進行熱處理之單片方式之情形時,與對將玻璃基板11積層而成之積層體10進行熱處理之情形相比,可提高升溫速度、降溫速度。於單片方式中可縮短熱處理時間,因此例如亦可設為升溫速度S1=120℃/h~400℃/h,升溫速度S2=40℃/h~120℃/h,維持最高溫度Tm3之時間t3-t2=0.5小時~2小時,降溫速度S4=-40℃/h~-120℃/h,降溫速度S5=-120℃/h~-400℃/h。 In the case of the monolithic method in which the glass substrate 11 is heat-treated one by one, the temperature increase rate and the temperature drop rate can be improved as compared with the case where the layered body 10 in which the glass substrate 11 is laminated is heat-treated. In the single-chip method, the heat treatment time can be shortened. Therefore, for example, the temperature increase rate S1=120°C/h to 400°C/h, the temperature increase rate S2=40°C/h to 120°C/h, and the maximum temperature Tm3 can be maintained. T3-t2=0.5 hours~2 hours, cooling rate S4=-40°C/h~-120°C/h, cooling rate S5=-120°C/h~-400°C/h.
又,亦可根據積層體10之積層方向上之厚度,變更升溫速度、降溫速度。例如,於積層體10之積層方向上之厚度為50cm以下之情形時,熱於積層方向上迅速地傳遞,因此亦可設為升溫速度S1=90℃/h~300℃/h,升溫速度S2=30℃/h~90℃/h,維持最高溫度Tm3之時間t3-t2=0.5小時~3小時,降溫速度S4=-30℃/h~-90℃/h,降溫速度S5=-90℃/h~-300℃/h。積層體10之積層方向上之厚度越薄,越提高升溫速度、降溫速度,於在積層方向上積層之玻璃基板11為1片、即單片方式之情形時,亦可以上述升溫速度、降溫速度進行熱處理。即 便積層體10之積層方向上之厚度變薄,亦可不改變升溫速度、降溫速度之大小關係而進行熱處理。 Further, the temperature increase rate and the temperature decrease rate can be changed according to the thickness in the stacking direction of the laminated body 10. For example, when the thickness of the laminated body 10 in the lamination direction is 50 cm or less, the heat is rapidly transferred in the lamination direction, so that the heating rate S1 = 90 ° C / h - 300 ° C / h, and the heating rate S2 can be set. =30°C/h~90°C/h, the time to maintain the highest temperature Tm3 t3-t2=0.5 hours~3 hours, the cooling rate S4=-30°C/h~-90°C/h, the cooling rate S5=-90°C /h~-300°C/h. The thinner the thickness of the laminated body 10 in the lamination direction, the higher the temperature increase rate and the lowering speed. When the glass substrate 11 laminated in the lamination direction is one piece, that is, in the case of a single piece, the temperature increase rate and the temperature drop rate may be increased. Heat treatment is performed. which is The thickness of the laminated body 10 in the lamination direction is reduced, and the heat treatment can be performed without changing the magnitude relationship between the temperature increase rate and the temperature drop rate.
其次,對第2實施形態之退火步驟進行詳細說明。第2實施形態為對玻璃基板逐片地進行熱處理之單片方式之熱處理之形態。第2實施形態中之玻璃基板之製造方法亦以圖1所示之流程進行。於此情形時,於步驟S3之玻璃基板之堆載時,以由下述圖6(a)所示之支持玻璃基板之支持構件支持之方式載置玻璃基板11。 Next, the annealing step of the second embodiment will be described in detail. The second embodiment is a form of heat treatment in a one-piece manner in which a glass substrate is heat-treated one by one. The method for producing the glass substrate in the second embodiment is also carried out in the flow shown in Fig. 1 . In this case, when the glass substrate of step S3 is stacked, the glass substrate 11 is placed so as to be supported by the supporting member for supporting the glass substrate shown in FIG. 6(a) below.
圖6(a)係表示爐內之玻璃基板11之載置狀態之一例的側視圖,圖6(b)係自底面側觀察圖6(a)之玻璃基板11所得之圖。玻璃基板11係水平載置於設置於爐140內之支持構件112上,且於爐140內進行熱處理。首先,將利用圖1所示之步驟S2所板狀裁切之玻璃基板11以由支持構件112支持之方式載置於支持構件112上(步驟S3),並於玻璃基板11載置於支持構件112上之狀態下進行熱處理(退火處理)(步驟S4)。於本實施形態中,不使複數片玻璃基板11積層,而以將一片(單層)玻璃基板11載置於支持構件112上之狀態進行熱處理。再者,亦可進行一面將載置於支持構件112上之玻璃基板11逐片搬送一面進行熱處理之單片方式之熱處理。又,可於爐內設置複數片載置於支持構件112上之玻璃基板11而對各玻璃基板11進行熱處理,又,亦可將玻璃基板11與支持構件112交替地積層,藉由支持構件112將玻璃基板11彼此隔開特定距離而對各玻璃基板11進行熱處理。 Fig. 6(a) is a side view showing an example of the state in which the glass substrate 11 in the furnace is placed, and Fig. 6(b) is a view of the glass substrate 11 of Fig. 6(a) viewed from the bottom surface side. The glass substrate 11 is placed horizontally on the support member 112 provided in the furnace 140, and is heat-treated in the furnace 140. First, the glass substrate 11 cut in a plate shape by the step S2 shown in FIG. 1 is placed on the support member 112 in a manner supported by the support member 112 (step S3), and placed on the support member in the glass substrate 11. The heat treatment (annealing treatment) is performed in the state of 112 (step S4). In the present embodiment, heat is not performed in a state in which a plurality of glass substrates 11 are laminated without placing a single (single-layer) glass substrate 11 on the support member 112. Further, a single-piece heat treatment in which the glass substrate 11 placed on the support member 112 is transferred one by one and heat-treated is performed. Further, a plurality of sheets of the glass substrate 11 placed on the support member 112 may be placed in the furnace to heat-treat the glass substrates 11, and the glass substrate 11 and the support member 112 may be alternately laminated by the support member 112. Each of the glass substrates 11 is heat-treated by separating the glass substrates 11 by a specific distance.
支持構件112例如由具有耐熱性之纖維構件、碳纖維、氧化鋁纖維、氧化矽纖維、多孔質陶瓷、碳石墨、碳氈、金屬構件、磚構件所構成,並於爐140內設置複數個。支持構件112係以使玻璃基板11大致水平之方式支持玻璃基板11之下表面(底面)。 The support member 112 is composed of, for example, a heat-resistant fiber member, carbon fiber, alumina fiber, cerium oxide fiber, porous ceramic, carbon graphite, carbon felt, metal member, or brick member, and is provided in a plurality of furnaces 140. The support member 112 supports the lower surface (bottom surface) of the glass substrate 11 in such a manner that the glass substrate 11 is substantially horizontal.
再者,支持玻璃基板11之支持構件112之數量、各支持構件112之 間隔、支持玻璃基板11之位置為任意。又,當對玻璃基板11進行熱處理時,玻璃基板11會膨脹而變形,因此支持構件112較佳為具有柔軟性。 Furthermore, the number of support members 112 supporting the glass substrate 11 and the respective support members 112 are The position of the spacer and the supporting glass substrate 11 is arbitrary. Moreover, when the glass substrate 11 is heat-treated, the glass substrate 11 expands and deforms, and therefore the support member 112 preferably has flexibility.
於爐140設置有複數個用以對爐140之環境(空氣)進行加熱之發熱裝置141,發熱裝置141成為熱源而對爐140之環境進行加熱。發熱裝置141例如由陶瓷加熱器、遠紅外線加熱器、鹵素加熱器所構成,並以使玻璃基板11之溫度成為下述熱歷程之方式對玻璃基板11及爐140之環境進行加熱。環境之熱傳遞至玻璃基板11,又,藉由遠紅外線、紅外線對玻璃基板11進行加熱,從而進行熱處理以使玻璃基板11之溫度成為400℃~600℃之範圍之溫度。進行熱處理時,爐140內成為封閉空間,不易受到爐140外之影響。發熱裝置141係以使爐140內之溫度分佈變得大致一致之方式對發熱量、發熱時間進行控制。只要爐140內之溫度分佈變得大致一致即可,將發熱裝置141設置於爐140內之位置、數量為任意。玻璃基板11係由支持構件112支持,並於玻璃基板11之下表面設置有特定之空間。由於爐140內之溫度分佈大致一致,故而於玻璃基板11之上表面、及由支持構件112支持之玻璃基板11之下表面,熱歷程相同。若於玻璃基板11之上表面與下表面之間產生熱歷程差,則熱收縮率於上表面及下表面不同而產生拉伸及壓縮應力,故而產生翹曲。因此,消除玻璃基板11之上表面與下表面之溫度變化之差,即,減小熱歷程之差。 The furnace 140 is provided with a plurality of heat generating devices 141 for heating the environment (air) of the furnace 140, and the heat generating device 141 serves as a heat source to heat the environment of the furnace 140. The heat generating device 141 is composed of, for example, a ceramic heater, a far-infrared heater, or a halogen heater, and heats the environment of the glass substrate 11 and the furnace 140 so that the temperature of the glass substrate 11 becomes the following thermal history. The heat of the environment is transmitted to the glass substrate 11, and the glass substrate 11 is heated by far infrared rays and infrared rays to heat the glass substrate 11 to a temperature in the range of 400 ° C to 600 ° C. When the heat treatment is performed, the inside of the furnace 140 becomes a closed space and is not easily affected by the outside of the furnace 140. The heat generating device 141 controls the amount of heat generation and the heat generation time so that the temperature distribution in the furnace 140 is substantially uniform. The temperature distribution in the furnace 140 may be substantially uniform, and the position and number of the heat generating device 141 in the furnace 140 may be arbitrary. The glass substrate 11 is supported by the support member 112, and a specific space is provided on the lower surface of the glass substrate 11. Since the temperature distribution in the furnace 140 is substantially uniform, the thermal history is the same on the upper surface of the glass substrate 11 and the lower surface of the glass substrate 11 supported by the support member 112. When a thermal history difference occurs between the upper surface and the lower surface of the glass substrate 11, the heat shrinkage rate is different between the upper surface and the lower surface, and tensile and compressive stresses are generated, so that warpage occurs. Therefore, the difference in temperature variation between the upper surface and the lower surface of the glass substrate 11 is eliminated, that is, the difference in thermal history is reduced.
其次,對步驟S4之熱處理進行說明。 Next, the heat treatment of step S4 will be described.
首先,控制發熱裝置141,以使爐140內之環境溫度成為熱處理溫度之方式進行處理。此處,所謂熱處理溫度係指將高精細顯示器所使用之由LTPS、IGZO構成之半導體層形成於玻璃基板11之形成溫度,具體而言為400℃~600℃之範圍之溫度。製造高精細顯示器時之玻璃基板11之加工處理溫度為低於玻璃之應變點(相當於1014.5泊之黏 度之溫度、例如6601℃)之溫度。若於較該加工處理溫度低之溫度區域中,玻璃基板之熱收縮率較大,則玻璃基板不適合作為用以製造高精細顯示器之玻璃基板。因此,於與製造高精細顯示器之玻璃基板之加工處理溫度大致相等之溫度區域即400℃~600℃之範圍之熱處理溫度下,對玻璃基板11進行熱處理,於熱處理溫度以下之溫度區域中,使熱收縮率成為0~15ppm,較佳為成為0~10ppm,更佳為成為0~6ppm,進而較佳為成為0~3ppm。 First, the heat generating device 141 is controlled so that the ambient temperature in the furnace 140 becomes the heat treatment temperature. Here, the heat treatment temperature refers to a temperature at which the semiconductor layer composed of LTPS or IGZO used in the high-definition display is formed on the glass substrate 11, specifically, a temperature in the range of 400 ° C to 600 ° C. The processing temperature of the glass substrate 11 when manufacturing a high-definition display is a temperature lower than the strain point of the glass (corresponding to a temperature of 10 14.5 poise, for example, 6601 ° C). If the heat shrinkage rate of the glass substrate is large in a temperature region lower than the processing temperature, the glass substrate is not suitable as a glass substrate for manufacturing a high-definition display. Therefore, the glass substrate 11 is heat-treated at a heat treatment temperature in a temperature range substantially equal to the processing temperature of the glass substrate on which the high-definition display is manufactured, that is, in the range of 400 ° C to 600 ° C, in a temperature region below the heat treatment temperature. The heat shrinkage ratio is 0 to 15 ppm, preferably 0 to 10 ppm, more preferably 0 to 6 ppm, and still more preferably 0 to 3 ppm.
其次,於爐140內之環境溫度成為熱處理溫度後,將玻璃基板11大致水平載置於爐140內之支持構件112上,並將爐140中之玻璃基板11之投入口封閉而使爐140內成為封閉空間。於使爐140內之環境溫度成為熱處理溫度之狀態下,將玻璃基板11投入至爐140內,藉此能以短時間對玻璃基板11進行加熱。 Next, after the ambient temperature in the furnace 140 becomes the heat treatment temperature, the glass substrate 11 is placed substantially horizontally on the support member 112 in the furnace 140, and the input port of the glass substrate 11 in the furnace 140 is closed to the inside of the furnace 140. Become a closed space. The glass substrate 11 is placed in the furnace 140 in a state where the ambient temperature in the furnace 140 is the heat treatment temperature, whereby the glass substrate 11 can be heated in a short time.
再者,於存在玻璃基板11之溫度與爐140內之環境溫度之差,導致將玻璃基板11載置於爐140內時玻璃基板11急遽地熱變形(熱膨脹)之情形時,亦可預先對玻璃基板11進行加熱後再載置於爐140內。藉由預先對玻璃基板11進行加熱,可抑制玻璃基板11急遽地熱變形,可減少產生於玻璃基板11之應變、翹曲、凹處等。又,亦可抑制因玻璃基板11與支持構件112摩擦而產生於玻璃基板11之損傷。 Furthermore, when there is a difference between the temperature of the glass substrate 11 and the ambient temperature in the furnace 140, the glass substrate 11 is thermally deformed (thermally expanded) when the glass substrate 11 is placed in the furnace 140, and the glass may be preliminarily The substrate 11 is heated and then placed in the furnace 140. By heating the glass substrate 11 in advance, it is possible to suppress the glass substrate 11 from being thermally deformed rapidly, and it is possible to reduce strain, warpage, recesses, and the like which are generated in the glass substrate 11. Moreover, damage to the glass substrate 11 due to friction between the glass substrate 11 and the support member 112 can also be suppressed.
其次,控制發熱裝置141,以20℃/分鐘以上~未達120℃/分鐘之升溫速度對玻璃基板11進行加熱,直至成為處於400℃~600℃之範圍之熱處理時之最高溫度即熱處理溫度。將玻璃基板11之溫度加熱至熱處理溫度之步驟為加熱步驟。經由加熱步驟後,將玻璃基板11之溫度以熱處理溫度維持5分鐘~120分鐘。以熱處理溫度之狀態持續維持玻璃基板11之溫度之步驟為維持步驟。於維持步驟中,玻璃基板11之溫度可於400℃~600℃之範圍內發生變化,玻璃基板11之溫度亦可不固定。例如,亦可以較20℃/分鐘~120℃/分鐘之升溫速度慢之速度、或 較0.5℃/分鐘~10℃/分鐘之第1降溫速度慢之速度,以使玻璃基板11之溫度成為400℃~600℃之範圍之方式加以維持。經由維持步驟後,以0.5℃/分鐘以上~未達10℃/分鐘之第1降溫速度,將玻璃基板11自熱處理溫度冷卻至較熱處理溫度低50℃~150℃之第1中間溫度。以第1降溫速度將玻璃基板11冷卻之後,以10℃/分鐘以上~未達25℃/分鐘之第2降溫速度,將玻璃基板11自第1中間溫度冷卻至第2中間溫度。以第2降溫速度將玻璃基板11冷卻後,以第1降溫速度進而將玻璃基板11自第2中間溫度冷卻至室溫。將玻璃基板11之溫度自熱處理溫度冷卻至室溫之步驟為冷卻步驟,熱處理溫度至第1中間溫度之冷卻為第1冷卻步驟,第1中間溫度至第2中間溫度之冷卻為第2冷卻步驟,第2中間溫度至室溫之冷卻為第3冷卻步驟。 Next, the heat generating device 141 is controlled to heat the glass substrate 11 at a temperature increase rate of 20 ° C / min or more to less than 120 ° C / min until the heat treatment temperature is the highest temperature at the time of heat treatment in the range of 400 ° C to 600 ° C. The step of heating the temperature of the glass substrate 11 to the heat treatment temperature is a heating step. After the heating step, the temperature of the glass substrate 11 is maintained at the heat treatment temperature for 5 minutes to 120 minutes. The step of continuously maintaining the temperature of the glass substrate 11 in the state of the heat treatment temperature is a maintaining step. In the maintaining step, the temperature of the glass substrate 11 may vary from 400 ° C to 600 ° C, and the temperature of the glass substrate 11 may not be fixed. For example, it can also be slower than the temperature increase rate of 20 ° C / min to 120 ° C / min, or The speed at which the first temperature drop rate is slower than 0.5 ° C / min to 10 ° C / min is maintained so that the temperature of the glass substrate 11 is in the range of 400 ° C to 600 ° C. After the maintenance step, the glass substrate 11 is cooled from the heat treatment temperature to a first intermediate temperature lower than the heat treatment temperature by 50 ° C to 150 ° C at a first temperature drop rate of 0.5 ° C / min or more to less than 10 ° C / min. After the glass substrate 11 is cooled at the first temperature drop rate, the glass substrate 11 is cooled from the first intermediate temperature to the second intermediate temperature at a second temperature drop rate of 10 ° C / min or more to less than 25 ° C / min. After the glass substrate 11 was cooled at the second temperature drop rate, the glass substrate 11 was further cooled from the second intermediate temperature to room temperature at the first temperature drop rate. The step of cooling the temperature of the glass substrate 11 from the heat treatment temperature to room temperature is a cooling step, and the cooling at the heat treatment temperature to the first intermediate temperature is the first cooling step, and the cooling from the first intermediate temperature to the second intermediate temperature is the second cooling step. The cooling from the second intermediate temperature to room temperature is the third cooling step.
圖7係表示玻璃基板11之熱歷程之圖。此處,熱歷程係表示隨著爐140內之熱處理而變化之玻璃基板11之溫度之歷程。圖中所示之溫度為Tm1<Tm2<Tm3<Tm4,Tm1=室溫(例如,25℃),Tm2=第2中間溫度(例如,200℃),Tm3=第1中間溫度(例如,400℃),Tm4=熱處理溫度(例如,500℃)。 FIG. 7 is a view showing the heat history of the glass substrate 11. Here, the thermal history represents the history of the temperature of the glass substrate 11 which varies with the heat treatment in the furnace 140. The temperature shown in the figure is Tm1 < Tm2 < Tm3 < Tm4, Tm1 = room temperature (for example, 25 ° C), Tm2 = second intermediate temperature (for example, 200 ° C), and Tm3 = first intermediate temperature (for example, 400 ° C) ), Tm4 = heat treatment temperature (for example, 500 ° C).
將加熱步驟、維持步驟、各冷卻步驟中之速度、時間之範圍示於下文。 The heating step, the maintaining step, the speed in each cooling step, and the range of time are shown below.
(1)加熱步驟:t1-t0=5分鐘~20分鐘、Tm4-Tm1=400℃~600℃、升溫速度S1=(Tm4-Tm1)/(t1-t0)=20℃/分鐘~120℃/分鐘;(2)維持步驟:t2-t1=5分鐘~120分鐘、Tm4-Tm4=0、速度S2=(Tm4-Tm4)/(t2-t1)=0℃/分鐘;(3)第1冷卻步驟:t3-t2=15分鐘~100分鐘、Tm4-Tm3=50℃~150℃、降溫速度S3(第1降溫速度)=(Tm4-Tm3)/(t3-t2)=0.5℃/分鐘~10℃/分鐘;(4)第2冷卻步驟:t4-t3=10分鐘~15分鐘、Tm3-Tm2=150℃~250℃、 降溫速度S4(第2降溫速度)為(Tm3-Tm2)/(t4-t3)=10℃/分鐘~25℃/分鐘;(5)第3冷卻步驟:t5-t4=15分鐘~100分鐘、Tm2-Tm1=50℃~150℃、降溫速度S5(第1降溫速度)=(Tm2-Tm1)/(t5-t4)=0.5℃/分鐘~10℃/分鐘。 (1) Heating step: t1-t0=5 minutes~20 minutes, Tm4-Tm1=400°C~600°C, heating rate S1=(Tm4-Tm1)/(t1-t0)=20°C/min~120°C/ Minutes; (2) Maintenance steps: t2-t1=5 minutes to 120 minutes, Tm4-Tm4=0, speed S2=(Tm4-Tm4)/(t2-t1)=0°C/min; (3) first cooling Step: t3-t2=15 minutes~100 minutes, Tm4-Tm3=50°C~150°C, cooling rate S3 (first cooling rate)=(Tm4-Tm3)/(t3-t2)=0.5°C/min~10 °C/min; (4) second cooling step: t4-t3=10 minutes~15 minutes, Tm3-Tm2=150°C~250°C, The cooling rate S4 (second cooling rate) is (Tm3-Tm2)/(t4-t3)=10°C/min~25°C/min; (5) the third cooling step: t5-t4=15 minutes~100 minutes, Tm2-Tm1=50°C~150°C, cooling rate S5 (first cooling rate)=(Tm2-Tm1)/(t5-t4)=0.5°C/min~10°C/min.
此處,室溫並不限定於25℃,例如為0℃~30℃。又,熱處理溫度並不限定於500℃,可為400℃~600℃之任意溫度,第1中間溫度並不限定於400℃,可為熱處理溫度-(50℃~150℃)之任意溫度。第2中間溫度為150℃~250℃之範圍之溫度,亦可固定為200℃。又,升溫速度/降溫速度係對玻璃基板11整體進行升溫/降溫之平均速度。 Here, the room temperature is not limited to 25 ° C, for example, 0 ° C to 30 ° C. Further, the heat treatment temperature is not limited to 500 ° C, and may be any temperature of 400 ° C to 600 ° C, and the first intermediate temperature is not limited to 400 ° C, and may be any temperature of the heat treatment temperature - (50 ° C to 150 ° C). The second intermediate temperature is a temperature in the range of 150 ° C to 250 ° C, and may be fixed at 200 ° C. Further, the temperature increase rate and the temperature decrease rate are average speeds at which the entire temperature of the glass substrate 11 is raised and lowered.
若將加熱步驟與維持步驟、冷卻步驟加以比較,則對玻璃基板11之熱收縮之影響較小,不易產生因熱收縮率之不均而產生之應變,因此處理時間(=Tm4-Tm1)亦可較短,亦可使升溫速度較快。於加熱步驟中,藉由縮短處理時間而提高升溫速度,可提高玻璃基板11之生產效率。 When the heating step is compared with the maintenance step and the cooling step, the influence on the heat shrinkage of the glass substrate 11 is small, and the strain due to the unevenness of the heat shrinkage rate is less likely to occur, so the processing time (=Tm4-Tm1) is also It can be shorter, and it can also make the heating rate faster. In the heating step, the heating rate is increased by shortening the processing time, and the production efficiency of the glass substrate 11 can be improved.
維持步驟與冷卻步驟同樣地對玻璃基板11之熱收縮之影響較大,藉由使冷卻步驟之處理時間(=t5-t2)較維持步驟之處理時間(=t2-t1)長,可減小熱收縮率。因此,藉由使維持步驟之處理時間較冷卻步驟之處理時間短,可提高玻璃基板11之生產效率。藉由延長維持步驟之處理時間,可實現玻璃基板11之低熱收縮率,因此,根據對玻璃基板11所要求之熱收縮率而任意地變更維持步驟之處理時間,藉此可實現玻璃基板11之生產效率之提高、熱收縮率之減小。又,玻璃基板11之板厚越薄,則熱越快地傳遞至玻璃基板11之內部,因此可根據玻璃基板11之板厚之薄度而縮短維持步驟之處理時間。又,維持步驟之溫度、即熱處理溫度係基於將高精細顯示器使用之由LTPS、IGZO構成之半導體層形成於玻璃基板11之形成溫度而設定的溫度,因此只要為 與形成溫度同等之溫度範圍即可,亦可為低於玻璃之應變點之溫度。由於無需使爐40內之溫度上升至玻璃之應變點,故而加熱成本變得較低,可以低成本減小玻璃基板11之熱收縮率。 The maintenance step has a large influence on the heat shrinkage of the glass substrate 11 in the same manner as the cooling step, and can be reduced by making the processing time of the cooling step (= t5 - t2) longer than the processing time (= t2 - t1) of the sustaining step. Heat shrinkage rate. Therefore, the production efficiency of the glass substrate 11 can be improved by making the processing time of the maintaining step shorter than the processing time of the cooling step. By extending the processing time of the maintenance step, the low heat shrinkage rate of the glass substrate 11 can be achieved. Therefore, the processing time of the maintenance step can be arbitrarily changed according to the heat shrinkage ratio required for the glass substrate 11, whereby the glass substrate 11 can be realized. Increased production efficiency and reduced heat shrinkage. Further, the thinner the thickness of the glass substrate 11, the faster the heat is transferred to the inside of the glass substrate 11, so that the processing time of the maintenance step can be shortened according to the thinness of the thickness of the glass substrate 11. In addition, the temperature of the maintenance step, that is, the heat treatment temperature is based on the temperature at which the semiconductor layer made of LTPS or IGZO used in the high-definition display is formed on the glass substrate 11, and therefore It may be the same temperature range as the formation temperature, or may be a temperature lower than the strain point of the glass. Since it is not necessary to raise the temperature in the furnace 40 to the strain point of the glass, the heating cost becomes low, and the heat shrinkage rate of the glass substrate 11 can be reduced at a low cost.
再者,應變點根據玻璃之種類而不同,為了減小熱收縮,玻璃基板11較佳為具有應變點較高之玻璃組成,玻璃基板11之玻璃之應變點較佳為600℃以上,更佳為655℃以上,例如為661℃。 Further, the strain point varies depending on the type of the glass. In order to reduce the heat shrinkage, the glass substrate 11 preferably has a glass composition having a higher strain point, and the glass substrate 11 has a strain point of preferably 600 ° C or more. It is 655 ° C or more, for example, 661 ° C.
第1冷卻步驟對玻璃基板11之熱收縮之影響較大,因此,處理時間(=t3-t2)較第2冷卻步驟之處理時間(=t4-t3)長,降溫速度S3較第2冷卻步驟之降溫速度S4慢。於對玻璃基板11之熱收縮之影響較大的熱處理溫度至第1中間溫度(例如,400℃)之熱處理中,使處理時間較其他步驟長而使降溫速度變慢,藉此可減少玻璃基板11之熱收縮率之不均,可抑制應變之產生。 Since the first cooling step has a large influence on the heat shrinkage of the glass substrate 11, the processing time (=t3-t2) is longer than the processing time (=t4-t3) of the second cooling step, and the cooling rate S3 is lower than the second cooling step. The cooling rate S4 is slow. In the heat treatment of the heat treatment temperature to the first intermediate temperature (for example, 400 ° C) which has a large influence on the heat shrinkage of the glass substrate 11, the treatment time is made longer than the other steps, and the temperature drop rate is slowed, whereby the glass substrate can be reduced. The uneven heat shrinkage rate of 11 can suppress the generation of strain.
第2冷卻步驟對玻璃基板11之熱收縮之影響較小,因此處理時間(=t4-t3)較第1冷卻步驟之處理時間(=t3-t2)短,降溫速度S4較第1冷卻步驟之降溫速度S3快。與熱處理溫度至第1中間溫度之溫度區域相比,第1中間溫度至第2中間溫度之區域對玻璃基板11之熱收縮之影響較小,不易產生因熱收縮率之不均而產生之應變。因此,於第2冷卻步驟中,使處理時間較第1冷卻步驟短而提高降溫速度,藉此可提高玻璃基板11之生產效率。 Since the second cooling step has a small influence on the heat shrinkage of the glass substrate 11, the processing time (=t4-t3) is shorter than the processing time (=t3-t2) of the first cooling step, and the cooling rate S4 is lower than the first cooling step. The cooling rate S3 is fast. The region from the first intermediate temperature to the second intermediate temperature has less influence on the heat shrinkage of the glass substrate 11 than the temperature region in which the heat treatment temperature is to the first intermediate temperature, and strain which is not generated due to unevenness in heat shrinkage rate is less likely to occur. . Therefore, in the second cooling step, the processing time is made shorter than the first cooling step, and the temperature drop rate is increased, whereby the production efficiency of the glass substrate 11 can be improved.
第3冷卻步驟對玻璃基板11之熱收縮之影響較小,因此可藉由任意之降溫速度將玻璃基板11冷卻。藉由使第3冷卻步驟之降溫速度S5較第2冷卻步驟之降溫速度S4慢,可抑制玻璃基板11之熱變形,從而抑制因玻璃基板11與支持構件12摩擦而產生於玻璃基板11之損傷。 Since the third cooling step has a small influence on the heat shrinkage of the glass substrate 11, the glass substrate 11 can be cooled by any cooling rate. By lowering the temperature drop rate S5 of the third cooling step than the temperature decreasing rate S4 of the second cooling step, thermal deformation of the glass substrate 11 can be suppressed, and damage to the glass substrate 11 due to friction between the glass substrate 11 and the support member 12 can be suppressed. .
再者,第3冷卻步驟對玻璃基板11之熱收縮之影響較小,因此亦可以第2冷卻步驟之降溫速度S4將玻璃基板11冷卻。藉由在第3冷卻步驟中以降溫速度S4進行冷卻,可提高玻璃基板11之生產效率。 Further, since the third cooling step has little influence on the heat shrinkage of the glass substrate 11, the glass substrate 11 can be cooled by the cooling rate S4 of the second cooling step. By cooling at the temperature decreasing rate S4 in the third cooling step, the production efficiency of the glass substrate 11 can be improved.
藉由此種熱處理,可將玻璃基板11之熱收縮率設為0~15ppm。玻璃基板11之熱收縮率較佳為設為0~10ppm,更佳為設為0~6ppm。此種熱收縮率可藉由對玻璃基板之玻璃組成、熱處理之溫度及熱處理時間進行調整而達成。又,於對玻璃基板之熱收縮之影響較小之溫度區域中,縮短處理時間而提高升溫速度/降溫速度,藉此可提高玻璃基板11之生產效率。又,於單片玻璃基板11之情形時,熱容易於玻璃基板11之面方向均等地傳遞,因此,藉由利用本實施形態之熱處理步驟對玻璃基板11進行處理,可提高玻璃基板11之生產效率,並且減小熱收縮率。 By such heat treatment, the heat shrinkage rate of the glass substrate 11 can be set to 0 to 15 ppm. The heat shrinkage rate of the glass substrate 11 is preferably from 0 to 10 ppm, more preferably from 0 to 6 ppm. Such a heat shrinkage rate can be achieved by adjusting the glass composition of the glass substrate, the temperature of the heat treatment, and the heat treatment time. Further, in the temperature region where the influence on the heat shrinkage of the glass substrate is small, the processing time is shortened and the temperature increase rate and the temperature decrease rate are increased, whereby the production efficiency of the glass substrate 11 can be improved. Further, in the case of the single-piece glass substrate 11, heat is easily transferred to the surface of the glass substrate 11 uniformly. Therefore, by processing the glass substrate 11 by the heat treatment step of the present embodiment, the production of the glass substrate 11 can be improved. Efficiency and reduce heat shrinkage.
其次,對上述第1實施形態或第2實施形態之經熱處理(離線退火)之玻璃基板11之評價及評價結果進行說明。此時之玻璃基板11係將以處於400℃~600℃之範圍之熱處理溫度維持5分鐘~30分鐘而進行熱處理之液晶顯示器用玻璃基板作為對象。 Next, the evaluation and evaluation results of the heat-treated (offline annealing) glass substrate 11 of the first embodiment or the second embodiment will be described. In this case, the glass substrate 11 is a glass substrate for a liquid crystal display which is heat-treated at a heat treatment temperature in the range of 400 ° C to 600 ° C for 5 minutes to 30 minutes.
於熱處理結束之玻璃基板11之評價中,投入至熱處理爐而再次進行熱處理。評價之溫度為(1)500℃即第1評價溫度、(2)較第1評價溫度低50℃之第2評價溫度(450℃)、(3)較第1評價溫度高50℃之第3評價溫度(550℃)。離線退火後之熱收縮率視情形存在不適於將高精細顯示器使用之由LTPS、IGZO構成之半導體層形成於玻璃基板11之情況。尤其,重要的是抑制於與製造高精細顯示器之玻璃基板11之半導體層形成時之溫度(將該溫度稱為加工處理溫度)大致相等之溫度區域即400℃~600℃之範圍附近的玻璃基板11之熱收縮率。因此,於與製造高精細顯示器之玻璃基板11中之半導體層形成時之溫度相等之溫度區域中對玻璃基板11之熱收縮率進行評價。 In the evaluation of the glass substrate 11 after the heat treatment, the heat treatment furnace was introduced and heat treatment was again performed. The temperature to be evaluated is (1) 500 ° C, that is, the first evaluation temperature, (2) the second evaluation temperature (450 ° C) lower than the first evaluation temperature by 50 ° C, and (3) the third higher than the first evaluation temperature by 50 ° C. The temperature was evaluated (550 ° C). The heat shrinkage rate after off-line annealing may be a case where a semiconductor layer composed of LTPS or IGZO which is not used for a high-definition display is formed on the glass substrate 11 as the case may be. In particular, it is important to suppress a glass substrate in the vicinity of a temperature range of 400 ° C to 600 ° C which is a temperature region at which the temperature at which the semiconductor layer of the glass substrate 11 of the high-definition display is formed (this temperature is referred to as a processing temperature) is substantially equal. 11 heat shrinkage rate. Therefore, the heat shrinkage ratio of the glass substrate 11 is evaluated in a temperature region equal to the temperature at which the semiconductor layer in the glass substrate 11 of the high-definition display is formed.
關於用以評價玻璃基板11之評價熱處理方法,以使熱處理爐內之溫度成為第1評價溫度、第2評價溫度、第3評價溫度之方式進行設定,將玻璃基板11投入至已設定為各評價溫度之熱處理爐,於熱處理 爐內進行30分鐘之熱處理後,自熱處理爐取出而自然冷卻。將藉由該方法進行評價熱處理時之玻璃基板11之熱收縮率分別設為第1熱收縮率C1、第2熱收縮率C2、第3熱收縮率C3。此時,適於製造高精細顯示器之玻璃基板11為滿足以下關係式之玻璃基板。 The evaluation heat treatment method for evaluating the glass substrate 11 is set so that the temperature in the heat treatment furnace becomes the first evaluation temperature, the second evaluation temperature, and the third evaluation temperature, and the glass substrate 11 is put into the evaluation. Temperature heat treatment furnace, heat treatment After heat treatment in the furnace for 30 minutes, it was taken out from the heat treatment furnace and naturally cooled. The heat shrinkage ratio of the glass substrate 11 at the time of the evaluation heat treatment by this method is made into the 1st heat-shrinkage rate C1, the 2nd heat-shrinkage rate C2, and the 3rd heat-shrinkage rate C3, respectively. At this time, the glass substrate 11 suitable for manufacturing a high-definition display is a glass substrate satisfying the following relational expression.
關係式:|C1-C2|/|C3-C1|<0.28 Relational formula: |C1-C2|/|C3-C1|<0.28
其中,C1=以第1評價溫度維持30分鐘時之第1熱收縮率,C2=以第2評價溫度維持30分鐘時之第2熱收縮率,C3=以第3評價溫度維持30分鐘時之第3熱收縮率。 Here, C1 = the first heat shrinkage rate when the first evaluation temperature is maintained for 30 minutes, C2 = the second heat shrinkage rate when the second evaluation temperature is maintained for 30 minutes, and C3 = when the third evaluation temperature is maintained for 30 minutes. The third heat shrinkage rate.
圖8係表示利用評價熱處理方法對第1實施形態中經熱處理之玻璃基板11進行熱處理時玻璃基板11之熱收縮率之結果之一例的圖。於適於製造高精細顯示器之玻璃基板中,於高精細顯示器之加工處理溫度以下,熱收縮率較小。因此,藉由使第1評價溫度至第2評價溫度之溫度區域內之熱收縮率(C1~C2)小於第1評價溫度至第3評價溫度之溫度區域內之熱收縮率(C1~C3),可實現適於製造高精細顯示器之玻璃基板。玻璃基板11於第1實施形態之熱處理中係以熱處理溫度Tm3(400℃~600℃)進行處理,因此,如圖8所示,自第1評價溫度至第2評價溫度之熱處理溫度以下之溫度區域內之熱收縮率減小至15ppm以下。然而,自第1評價溫度至第3評價溫度之熱處理溫度以上之溫度區域內之熱收縮率之降低較小,成為接近熱處理前之熱收縮率(例如,80ppm)之熱收縮率。玻璃基板11由於對製造高精細顯示器造成影響之溫度區域內之熱收縮率與不影響高精細顯示器之製造之溫度區域相比變得極低,因此適於製造高精細顯示器。又,於超過熱處理溫度之溫度區域中,藉由抑制玻璃基板11之熱收縮率之降低,可抑制熱收縮之不均、玻璃基板11內之應變。 FIG. 8 is a view showing an example of a result of heat shrinkage of the glass substrate 11 when the glass substrate 11 subjected to heat treatment in the first embodiment is heat-treated by the evaluation heat treatment method. In a glass substrate suitable for manufacturing a high-definition display, the heat shrinkage rate is small below the processing temperature of the high-definition display. Therefore, the heat shrinkage ratio (C1 to C3) in the temperature range from the first evaluation temperature to the third evaluation temperature is lower than the heat shrinkage ratio (C1 to C2) in the temperature range from the first evaluation temperature to the second evaluation temperature. A glass substrate suitable for manufacturing a high-definition display can be realized. In the heat treatment of the first embodiment, the glass substrate 11 is treated at a heat treatment temperature Tm3 (400 ° C to 600 ° C). Therefore, as shown in FIG. 8 , the temperature is lower than the heat treatment temperature from the first evaluation temperature to the second evaluation temperature. The heat shrinkage rate in the region is reduced to less than 15 ppm. However, the decrease in the heat shrinkage rate in the temperature region from the first evaluation temperature to the heat treatment temperature of the third evaluation temperature is small, and the heat shrinkage ratio close to the heat shrinkage ratio (for example, 80 ppm) before the heat treatment is obtained. The glass substrate 11 is extremely suitable for manufacturing a high-definition display because the heat shrinkage rate in the temperature region which affects the manufacture of the high-definition display becomes extremely low as compared with the temperature region which does not affect the manufacture of the high-definition display. Moreover, by suppressing the decrease in the heat shrinkage rate of the glass substrate 11 in the temperature region exceeding the heat treatment temperature, unevenness in heat shrinkage and strain in the glass substrate 11 can be suppressed.
為了確認第1實施形態之效果,藉由作為熔融法之1種之溢流下 拉法而製作複數片具有下述玻璃組成之玻璃基板。玻璃基板之應變點為660℃。 In order to confirm the effect of the first embodiment, it is overflowed by one type of the melting method. A glass substrate having the following glass composition was produced by pulling. The strain point of the glass substrate was 660 °C.
‧玻璃組成 ‧ glass composition
SiO2 67.0莫耳%、Al2O3 10.6莫耳%、B2O3 11.0莫耳%、RO 11.4莫耳%(RO為MgO、CaO、SrO及BaO之合計量)。 SiO 2 67.0 mol%, Al 2 O 3 10.6 mol %, B 2 O 3 11.0 mol %, RO 11.4 mol % (RO is the total amount of MgO, CaO, SrO and BaO).
‧退火 ‧annealing
利用第1實施形態之方法對該玻璃基板進行熱處理(亦稱為退火)。實施例中,將玻璃基板積層,以於300℃至熱處理溫度之最高溫度500℃之溫度區域中,使升溫速度、降溫速度較300℃至室溫之溫度區域中慢而使升溫時間、降溫時間變長之方式進行熱處理。比較例中,形成玻璃基板之積層體,不使升溫速度、降溫速度根據溫度區域發生變化、即將升溫速度及降溫速度分別固定為一定速度而進行熱處理(先前例)。 The glass substrate is subjected to heat treatment (also referred to as annealing) by the method of the first embodiment. In the embodiment, the glass substrate is laminated, and the temperature rise rate and the temperature drop rate are slower than the temperature range of 300 ° C to room temperature in the temperature range of 300 ° C to the highest temperature of the heat treatment temperature of 500 ° C, and the temperature rise time and the temperature decrease time are made. The heat treatment is carried out in a manner of lengthening. In the comparative example, the laminated body of the glass substrate was formed, and the temperature increase rate and the temperature decrease rate were not changed according to the temperature region, and the temperature increase rate and the temperature decrease rate were fixed at a constant speed, respectively, and heat treatment was performed (previous example).
‧熱收縮率之測定 ‧ Determination of heat shrinkage rate
於熱處理前將玻璃基板切割成特定尺寸之長方形,於長邊兩端部劃出標記線,並於短邊中央部切斷成兩半而獲得2個玻璃樣品。對其中一個玻璃樣品進行熱處理(升溫速度為10℃/分鐘,於450℃下放置1小時)。對不進行熱處理之另一玻璃樣品之長度進行測定。進而,使經熱處理之玻璃樣品與未經處理之玻璃樣品緊挨,利用雷射顯微鏡測定標記線之偏移量,從而求出玻璃樣品之長度之差量,藉此可求出樣品之熱收縮量。使用作為該熱收縮量之差量、及熱處理前之玻璃樣品之長度,藉由下式求出熱收縮率。將該玻璃樣品之熱收縮率設為玻璃基板之熱收縮率。 Before the heat treatment, the glass substrate was cut into a rectangular shape of a specific size, and a mark line was drawn at both end portions of the long side, and cut into two halves at the center of the short side to obtain two glass samples. One of the glass samples was subjected to heat treatment (temperature up rate was 10 ° C / min, and left at 450 ° C for 1 hour). The length of another glass sample that was not heat treated was measured. Further, the heat-treated glass sample is placed next to the untreated glass sample, and the offset of the mark line is measured by a laser microscope to determine the difference between the lengths of the glass samples, thereby obtaining the heat shrinkage of the sample. the amount. Using the difference between the amount of heat shrinkage and the length of the glass sample before the heat treatment, the heat shrinkage ratio was determined by the following formula. The heat shrinkage rate of the glass sample was defined as the heat shrinkage ratio of the glass substrate.
熱收縮率(ppm)=(差量)/(熱處理前之玻璃樣品之長度)×106 Heat shrinkage rate (ppm) = (difference) / (length of glass sample before heat treatment) × 10 6
對退火前之玻璃基板之熱收縮率進行研究,結果為50ppm。 The heat shrinkage rate of the glass substrate before annealing was examined and found to be 50 ppm.
對退火後之玻璃基板之熱收縮率進行研究,結果於實施例中,積層方向之端部之玻璃基板之熱收縮率為2ppm,積層方向之中央部之玻璃基板之熱收縮率為3ppm。另一方面,於先前例中,積層方向之端部之玻璃基板之熱收縮率為10ppm,積層方向之中央部之玻璃基板之熱收縮率為18ppm。 The heat shrinkage rate of the glass substrate after the annealing was examined. As a result, in the examples, the heat shrinkage rate of the glass substrate at the end portion in the stacking direction was 2 ppm, and the heat shrinkage rate of the glass substrate at the center portion in the stacking direction was 3 ppm. On the other hand, in the prior art, the heat shrinkage rate of the glass substrate at the end portion in the stacking direction was 10 ppm, and the heat shrinkage rate of the glass substrate at the center portion in the stacking direction was 18 ppm.
又,實施例中,玻璃基板之邊緣區域與中央區域之熱歷程差減小,邊緣區域之熱收縮率為2ppm,中央區域之熱收縮率為3ppm。另一方面,於先前例中,邊緣區域之熱收縮率為11ppm,中央區域之熱收縮率為18ppm。 Further, in the examples, the thermal history difference between the edge region and the central region of the glass substrate was reduced, the thermal contraction rate of the edge region was 2 ppm, and the thermal contraction rate of the central region was 3 ppm. On the other hand, in the previous example, the heat shrinkage rate in the edge region was 11 ppm, and the heat shrinkage ratio in the center region was 18 ppm.
如此,藉由根據溫度區域使升溫速度、降溫速度發生變化,而於熱處理步驟中均等地調整複數片玻璃基板間之熱分佈,藉此可減小熱處理後之玻璃基板之熱收縮率之不均。 In this manner, by changing the temperature increase rate and the temperature decrease rate in accordance with the temperature region, the heat distribution between the plurality of glass substrates is uniformly adjusted in the heat treatment step, whereby the unevenness of the heat shrinkage rate of the glass substrate after the heat treatment can be reduced. .
為了確認第2實施形態之效果,藉由溢流下拉法制作複數片具有與第1實施形態之實驗例相同之玻璃組成之玻璃基板。玻璃基板之板厚為0.5mm,玻璃基板之應變點為660℃。 In order to confirm the effect of the second embodiment, a glass substrate having a glass composition similar to that of the experimental example of the first embodiment was produced by an overflow down-draw method. The thickness of the glass substrate was 0.5 mm, and the strain point of the glass substrate was 660 °C.
‧退火 ‧annealing
利用第2實施形態之熱處理之方法對該玻璃基板進行熱處理。實施例中,將一片玻璃基板載置於支持構件上,並以與第1中間溫度至第2中間溫度之溫度區域相比,熱處理溫度500℃至第1中間溫度之溫度區域之降溫速度變慢之方式進行熱處理。比較例中,與實施例同樣地將一片玻璃基板載置於支持構件上,並以與第1中間溫度至第2中間溫度之溫度區域相比,熱處理溫度500℃至第1中間溫度之溫度區域之降溫速度變快之方式進行熱處理。 The glass substrate is subjected to heat treatment by the method of heat treatment in the second embodiment. In the embodiment, a piece of the glass substrate is placed on the supporting member, and the temperature decreasing rate of the temperature range of the heat treatment temperature of 500 ° C to the first intermediate temperature is slower than the temperature range of the first intermediate temperature to the second intermediate temperature. The heat treatment is performed in the same manner. In the comparative example, a glass substrate was placed on the support member in the same manner as in the example, and the temperature range of the heat treatment temperature of 500 ° C to the first intermediate temperature was compared with the temperature range from the first intermediate temperature to the second intermediate temperature. The heat treatment is performed in such a manner that the cooling rate is increased.
熱收縮率之測定係利用與第1實施形態中之熱收縮率之測定相同 之方法進行。熱處理前之玻璃樣品之熱收縮率為40~50ppm。 The measurement of the heat shrinkage rate is the same as the measurement of the heat shrinkage ratio in the first embodiment. The method is carried out. The heat shrinkage rate of the glass sample before the heat treatment was 40 to 50 ppm.
設為熱處理溫度=500℃、第1中間溫度=400℃、第2中間溫度=200℃、維持時間=10分鐘,使升溫速度、第1降溫速度、第2降溫速度變化,並將玻璃樣品之熱收縮率進行比較。將其結果示於表1。 The heat treatment temperature = 500 ° C, the first intermediate temperature = 400 ° C, the second intermediate temperature = 200 ° C, and the maintenance time = 10 minutes, and the temperature increase rate, the first temperature drop rate, and the second temperature drop rate were changed, and the glass sample was The heat shrinkage ratio is compared. The results are shown in Table 1.
如表1之實施例1、2所示,於第1降溫速度較第2降溫速度慢且升溫速度為20℃/分鐘以上~未達120℃/分鐘之範圍內,可減小玻璃基板之熱收縮率,熱收縮率之不均亦較小。又,如實施例1~6所示,於第1降溫速度為0.5℃/分鐘以上~未達10℃/分鐘、第2降溫速度為10℃/分鐘以上~未達25℃/分鐘之範圍內,可將玻璃基板之熱收縮率減小至15ppm以下,熱收縮率之不均亦較小。而且,藉由使對熱收縮率之影響較大之第1降溫速度更慢,可進一步減小熱收縮率。又,如比較例1~3所示,於本實施形態之速度範圍外且第1降溫速度>第2降溫速度之情形時,雖然玻璃基板之熱收縮率減小,但超過15ppm,因此判明並非有效之熱處理。 As shown in the first and second embodiments of Table 1, the heat of the glass substrate can be reduced in the range where the first temperature drop rate is slower than the second temperature drop rate and the temperature increase rate is 20 ° C / min or more to less than 120 ° C / min. The shrinkage rate and the unevenness of the heat shrinkage rate are also small. Further, as shown in Examples 1 to 6, the first temperature drop rate is 0.5 ° C / min or more to less than 10 ° C / min, and the second temperature drop rate is 10 ° C / min or more to less than 25 ° C / min. The heat shrinkage rate of the glass substrate can be reduced to 15 ppm or less, and the unevenness of the heat shrinkage rate is also small. Further, by making the first temperature drop rate having a large influence on the heat shrinkage rate slower, the heat shrinkage rate can be further reduced. Further, as shown in Comparative Examples 1 to 3, when the first temperature drop rate and the second temperature drop rate were outside the speed range of the present embodiment, the heat shrinkage rate of the glass substrate was reduced, but it exceeded 15 ppm, so that it was found that Effective heat treatment.
其次,對將第2實施形態之熱處理中之維持時間設定為0分鐘、2分鐘、5分鐘、30分鐘、60分鐘、120分鐘、150分鐘之情形時的玻璃樣品之熱收縮率進行比較。再者,設為熱處理溫度=500℃、第1中間溫度=400℃、第2中間溫度=200℃、升溫速度=50℃/分鐘、第1降溫速 度=3℃/分鐘、第2降溫速度=13℃/分鐘。將其結果示於表2。 Next, the heat shrinkage ratio of the glass samples when the maintenance time in the heat treatment of the second embodiment was set to 0 minutes, 2 minutes, 5 minutes, 30 minutes, 60 minutes, 120 minutes, and 150 minutes was compared. Further, heat treatment temperature = 500 ° C, first intermediate temperature = 400 ° C, second intermediate temperature = 200 ° C, temperature increase rate = 50 ° C / minute, and first temperature drop rate Degree = 3 ° C / min, and second cooling rate = 13 ° C / min. The results are shown in Table 2.
如表2之實施例1~6所示,藉由設置維持時間,可使玻璃基板之熱收縮率為10ppm以下,熱收縮率之不均亦較小。藉由將維持時間設為5~150分鐘,可使熱收縮率降低至10ppm以下。尤其是於維持時間為20~120分鐘之實施例3~5中,顯示出熱收縮率為7±1ppm以下之優異之效果。 As shown in Examples 1 to 6 of Table 2, by setting the holding time, the heat shrinkage rate of the glass substrate was 10 ppm or less, and the unevenness of the heat shrinkage rate was also small. By setting the maintenance time to 5 to 150 minutes, the heat shrinkage rate can be reduced to 10 ppm or less. In particular, in Examples 3 to 5 in which the holding time was 20 to 120 minutes, an excellent effect of a heat shrinkage rate of 7 ± 1 ppm or less was exhibited.
其次,對將第2實施形態之熱處理時之熱處理溫度設定為350℃、400℃、500℃、600℃、650℃之情形時的玻璃樣品之熱收縮率進行比較。再者,設為維持時間=10分鐘、第1中間溫度=400℃、第2中間溫度=200℃、升溫速度=50℃、第1降溫速度=3℃/分鐘、第2降溫速度=13℃/分鐘。將其結果示於表3。 Next, the heat shrinkage ratio of the glass sample when the heat treatment temperature in the heat treatment in the second embodiment was set to 350 ° C, 400 ° C, 500 ° C, 600 ° C, and 650 ° C was compared. Further, the maintenance time = 10 minutes, the first intermediate temperature = 400 ° C, the second intermediate temperature = 200 ° C, the temperature increase rate = 50 ° C, the first temperature drop rate = 3 ° C / minute, and the second temperature drop rate = 13 ° C /minute. The results are shown in Table 3.
如表3之實施例1~3所示,藉由使熱處理溫度為400℃以上至600℃以下,可使玻璃基板之熱收縮率大致為10ppm以下,熱收縮率之不均亦較小。另一方面,如比較例1所示,於熱處理溫度為350℃之情形時,玻璃基板之熱收縮率超過15ppm,因此判明為並非有效之熱處 理。又,如比較例2所示,於熱處理溫度為650℃之情形時,雖然可使玻璃基板之熱收縮率為15ppm以下,但認為就熱效率之觀點而言並非有效之熱處理。 As shown in Examples 1 to 3 of Table 3, when the heat treatment temperature is 400 ° C or more to 600 ° C or less, the heat shrinkage rate of the glass substrate can be made substantially 10 ppm or less, and the unevenness of the heat shrinkage rate is also small. On the other hand, as shown in Comparative Example 1, when the heat treatment temperature was 350 ° C, the heat shrinkage rate of the glass substrate exceeded 15 ppm, and thus it was found that it was not an effective heat. Reason. Further, as shown in Comparative Example 2, when the heat treatment temperature is 650 ° C, the heat shrinkage rate of the glass substrate can be 15 ppm or less, but it is considered that the heat treatment is not effective from the viewpoint of thermal efficiency.
如上所示,藉由使降溫速度根據溫度區域發生變化,可減小熱處理後之玻璃基板之熱收縮率。 As described above, by changing the temperature drop rate depending on the temperature region, the heat shrinkage rate of the glass substrate after the heat treatment can be reduced.
以上,對本發明之玻璃基板之製造方法進行了詳細說明,當然,本發明並不限定於上述實施形態及實施例等,亦可於不脫離本發明之主旨之範圍內進行各種改良或變更。 In the above, the method of manufacturing the glass substrate of the present invention is described in detail. The present invention is not limited to the above-described embodiments and examples, and various modifications and changes can be made without departing from the spirit and scope of the invention.
S1~S8‧‧‧步驟 S1~S8‧‧‧Steps
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