201218467 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種發光元件，特別是指一種半導體發光元 件。 【先前技術·】 [0002] 發光二極體憑藉其高光效、低能耗、無污染等優點，已 被應用於越來越多的場合之中，大有取代傳統光源的趨 勢。 0 [0003] 由於熱量對於發光晶片的工作影響較大，如若得不到及 時地散發，將會導致發光晶片的發光效率顯著下降，並 對發光晶片的壽命造成影響。然而，習知的發光二極體 的承載發光晶片用的基板通常是採用塑膠製成，其熱傳 導率較低（通常不到10W/mK)，顯然難以滿足發光晶片的 散熱需求。特別是對於當前發熱量越來越大的大功率發 光二極體而言，習知的塑膠基板的散熱瓶頸更顯突出。 【發明内容】 〇 [0004] 因此，有必要提供一種散熱較好的發光元件。 [0005] —種發光元件，包括半導體光源及承載半導體光源的基 板，基板内具有導熱通道，導熱通道的熱傳導率高於基 板的熱傳導率。 [0006] 由於在基板内設有熱傳導率較高的材料，可以有效地提 升基板的熱傳導能力，從而加快半導體光源的散熱，使 其能夠穩定的進行工作。 【實施方式】 099137173 表單編號A0101 第3頁/共17頁 0992064852-0 201218467 [0007] 請參閱圖1，示出了本發明第一實施例的發光元件10。本 實施例中發光元件10為一發光二極體，其包括一基板20 、固定在基板20表面的二引腳30、電連接二引腳30的一 半導體光源40及覆蓋半導體光源40的一封裝體50。該基 板20由塑膠（如玻璃環氧樹脂、玻璃苯樹脂等）或者陶瓷（ 如氧化鋁、氧化鍅、氮化矽等）所製成。根據所選用的材 料，基板2 0的熱傳導率也不盡相同，其範圍介於 0. l~30W/mK之間。基板2 0開設有多個均勻分佈的槽道（ 圖未標），其中每一槽道均沿基板20的厚度方向貫穿基板 20的頂面及底面。每一槽道内填充有高導熱材料，如金 、銀、銅、銘等，而形成多條導熱通道22。設定基板20 的熱傳導率為\，導熱通道22内的導熱材料的熱傳導率 為〖2，基板20上單位體積（lmm*lmm*lmm)的熱傳導率可 用下式進行表示： [〇〇〇8] κ=κ1ν1+κ2ν2 [0009] 其中為單位體積内基板2 0材料所占的體積百分比，V2 為單位體積内導熱材料所占的體積百分比。201218467 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a light-emitting element, and more particularly to a semiconductor light-emitting element. [Prior Art·] [0002] Light-emitting diodes have been used in more and more occasions due to their high luminous efficiency, low energy consumption, and no pollution. They have a tendency to replace traditional light sources. 0 [0003] Since heat has a great influence on the operation of the light-emitting chip, if it is not released in time, the light-emitting efficiency of the light-emitting chip is significantly lowered, and the life of the light-emitting chip is affected. However, the conventional light-emitting diode substrate for carrying a light-emitting chip is usually made of plastic, and its heat conductivity is low (usually less than 10 W/mK), which is obviously difficult to meet the heat-dissipating demand of the light-emitting chip. Especially for the high-power light-emitting diodes with increasing heat generation, the heat-dissipation bottleneck of the conventional plastic substrate is more prominent. SUMMARY OF THE INVENTION [0004] Therefore, it is necessary to provide a light-emitting element having better heat dissipation. [0005] A light-emitting element comprising a semiconductor light source and a substrate carrying a semiconductor light source, wherein the substrate has a heat conduction channel, and the thermal conductivity of the heat conduction channel is higher than the thermal conductivity of the substrate. [0006] Since a material having a high thermal conductivity is provided in the substrate, the heat conduction capability of the substrate can be effectively improved, thereby accelerating the heat dissipation of the semiconductor light source, so that it can work stably. [Embodiment] 099137173 Form No. A0101 Page 3 of 17 0992064852-0 201218467 [0007] Referring to Fig. 1, a light-emitting element 10 of a first embodiment of the present invention is shown. In this embodiment, the light-emitting element 10 is a light-emitting diode, and includes a substrate 20, two pins 30 fixed on the surface of the substrate 20, a semiconductor light source 40 electrically connecting the two pins 30, and a package covering the semiconductor light source 40. Body 50. The substrate 20 is made of plastic (e.g., glass epoxy resin, glass benzene resin, etc.) or ceramic (e.g., alumina, yttria, tantalum nitride, etc.). Depending on the material selected, the thermal conductivity of the substrate 20 is also different, and the range is between 0.1 and 30 W/mK. The substrate 20 is provided with a plurality of uniformly distributed channels (not shown), wherein each of the channels penetrates the top surface and the bottom surface of the substrate 20 in the thickness direction of the substrate 20. Each channel is filled with a highly thermally conductive material such as gold, silver, copper, or the like to form a plurality of thermally conductive passages 22. The thermal conductivity of the substrate 20 is set to \, and the thermal conductivity of the thermally conductive material in the heat conduction passage 22 is [2], and the thermal conductivity per unit volume (lmm*lmm*lmm) on the substrate 20 can be expressed by the following formula: [〇〇〇8] κ=κ1ν1+κ2ν2 [0009] where is the volume percentage of the substrate 20 material per unit volume, and V2 is the volume percentage of the heat conductive material per unit volume.
[0010] 如基板20的單位體積内有η條槽道，每條槽道的半徑為R ，上式可變換為： [0011] K = n^R2K2 + (l-n^R2)K1[0010] If there are n channels in the unit volume of the substrate 20, and the radius of each channel is R, the above formula can be converted into: [0011] K = n^R2K2 + (l-n^R2) K1
[0012] 可見基板20單位體積的熱傳導率與槽道的數量、孔徑及 導熱材料的熱傳導率均有關聯。舉例而言，設K^SW/mK ，K2 = 428W/mk(選取金作為導熱材料），n = 9，R = 0. 15mm ，代入上式，可得出K = 273W/mK。顯然，填充有導熱材 099137173 表單編號A0101 第4頁/共17頁 0992064852-0 201218467 料的基板20的熱傳導率要遠高於未填充導熱材料的基板 20。因此，通過在基板20内填充導熱材料，可大幅度提 升基板20的傳熱能力，從而可確保半導體光源4〇的正常 工作。 [0013] Ο ο [0014] 該二引腳30貼設於基板20上並彼此隔開。每一引腳3〇包 括一固定於基板20頂面的輸入段32、從基板2〇側面水準 向外突出的一外接段34及一連接輸入段32及外接段34的 連接段36。該外接段34用於與外部的電路結構（圖未示） 連接以將電流通過連接段36傳輸至輸入段32。該連接段 36貼設於基板20側φ，其垂直於相互平括的外接段34及 輸入段32。該輸入段32用於與半導體光源4〇電連接以將 電流輸入進半導體光源40内》該半導體光源4〇粘接於基 板20頂面並位於二引腳30的輸入段32之間。本實施例中 半導體光源40為一發光晶片’其可由氛:化嫁、氮化銦嫁 、砷化鎵等半導體發光材料所製成，以向外輕射出所需 的光線。半導體光源40通译二金線60分別連接至二引腳 30的輸入段32，以完成與引腳30的電連接。封裳體5〇由 玻璃、環氧樹脂、聚碳酸酯、聚甲基丙稀酸曱醋等透明 的材料所製成。封裝體50的輪廓與基板20的輪廓相當， 其覆蓋住半導體光源40及金線60以起到保護作用。 由於靠近半導體光源40位置處的熱量要高於遠離半導體 光源40處的熱量’因此上述均勻分佈的導熱通道22的尺 寸及排布還可作相應的變化以提供更好的散熱性能。比 如可如圖2所示將靠近半導體光源40的導熱通道22之間的 距離減小’使靠近半導體光源40位置處的導熱通道22的 099137173 表單編號Α0101 第5頁/共17頁 0992064852-0 201218467 分佈密度要大於遠離半導體光源4〇位置處的導熱通道22 分佈密度；或者如圖3所示將靠近半導體光源40的導熱通 道22加粗’使靠近半導體光源4〇位置處的導熱通道22的 直徑要大於遠離半導體光源4〇位置處的導熱通道22直徑 〇 [0015] 當採用金屬作為導熱材料時，由於這些導熱通道22貫通 基板20並其中有部分頂部直接與引腳30連接，有可能會 受各種外界因素影響導致二引腳3〇通過導熱通道22相互 導通而造成短路（比如在基板2〇底面塗覆面積較大的可導 電的導熱膠時）。因此，為避免此種情況，上述導熱通道 22還可作進一步的改進。參見圖4，此基板2〇内的導熱通 道22包括兩種不同的第一導熱通道220及第二導熱通道 222。第一導熱通道220從基板20頂面向下延伸並終止於 基板20内部靠近基板20底面的位置處，第二導熱通道222 從基板20底面向上延伸並終止於基板2〇内部靠近基板20 頂面的位置處《第一導熱通道220與第二導熱通道222交 替設置在基板20内部並彼此隔開。由於第一導熱通道220 及第二導熱通道222均未貫通基板20，因此即使基板20底 面貼有導電材料，也不會發生與引腳3〇導通的情況，從 而使發光一極體的應用更加安全。 [0016] 當然，由於導熱通道22本身就具備導電性，其也可如圖5 所示直接作為發光元件10的導電通道以取代原有的引腳 30結構。靠近基板20每側的多條導熱通道22的頂端及底 端分別通過二個接墊24連接起來，以分別與半導體光源 40及外界進行連接。 099137173 表單編號A0101 第6頁/共17頁 0992064852-0 201218467 [0017] 可以理解地，上述導熱通道22的結構並不限於發光二極 體的封敦基板，其同樣可適用於接合發光二極體的電路 板參見圖6 ’示出了與前述各實施不同的發光元件1〇。 該發光tl件1〇包括基板2〇a及固定於基板2〇a上的半導體 光源i〇b。該半導體光源1〇b可為前述各實施例中的任一 極體也可以為不具備導熱通道22的發光二極體 本只施中所採用的是後者。本實施例中的基板20a為用 於與半導體光源l〇b電連接的電路板，其在對應於半導體[0012] It can be seen that the thermal conductivity per unit volume of the substrate 20 is related to the number of channels, the pore diameter, and the thermal conductivity of the thermally conductive material. For example, let K^SW/mK, K2 = 428W/mk (select gold as the heat conductive material), n = 9, R = 0.15mm, substituting into the above formula, we can get K = 273W/mK. Obviously, the thermal conductivity of the substrate 20 filled with the heat conductive material 099137173 Form No. A0101 Page 4 / 17 page 0992064852-0 201218467 is much higher than that of the substrate 20 which is not filled with the heat conductive material. Therefore, by filling the substrate 20 with the heat conductive material, the heat transfer capability of the substrate 20 can be greatly improved, and the normal operation of the semiconductor light source 4 can be ensured. [0013] The two pins 30 are attached to the substrate 20 and spaced apart from each other. Each of the pins 3 includes an input section 32 fixed to the top surface of the substrate 20, an external section 34 projecting outwardly from the side of the substrate 2, and a connecting section 36 connecting the input section 32 and the external section 34. The circumscribed section 34 is for connection to an external circuit structure (not shown) for transmitting current through the connecting section 36 to the input section 32. The connecting section 36 is attached to the side φ of the substrate 20, which is perpendicular to the circumscribed external section 34 and the input section 32. The input section 32 is for electrically connecting to the semiconductor light source 4 to input current into the semiconductor light source 40. The semiconductor light source 4 is bonded to the top surface of the substrate 20 and between the input sections 32 of the two pins 30. In this embodiment, the semiconductor light source 40 is a light-emitting chip, which can be made of a semiconductor luminescent material such as a smear, an indium nitride, or a gallium arsenide to lightly emit light. The semiconductor light source 40 interprets the two gold wires 60 to the input segments 32 of the two pins 30, respectively, to complete the electrical connection to the pins 30. The sealing body is made of transparent materials such as glass, epoxy resin, polycarbonate, and polymethyl methacrylate vinegar. The outline of the package 50 is comparable to the outline of the substrate 20, which covers the semiconductor light source 40 and the gold wire 60 for protection. Since the heat at the location near the semiconductor light source 40 is higher than the heat away from the semiconductor light source 40, the size and arrangement of the uniformly distributed thermally conductive passages 22 described above can be varied to provide better heat dissipation. For example, the distance between the heat-conducting channels 22 near the semiconductor light source 40 can be reduced as shown in FIG. 2 '099137173 close to the heat-conducting channel 22 at the position of the semiconductor light source 40. Form number Α 0101 Page 5 / 17 pages 0992064852-0 201218467 The distribution density is greater than the distribution density of the heat-conducting channel 22 at a position away from the semiconductor light source; or the heat-conducting channel 22 near the semiconductor light source 40 is thickened as shown in FIG. 3 to make the diameter of the heat-conducting channel 22 near the position of the semiconductor light source 4? It is larger than the diameter of the heat conduction channel 22 at a position away from the semiconductor light source 4〇 [0015] When metal is used as the heat conductive material, since these heat conduction channels 22 penetrate the substrate 20 and some of the top portions thereof are directly connected to the pins 30, there is a possibility that The influence of various external factors causes the two pins 3〇 to be electrically connected to each other through the heat conduction channel 22 to cause a short circuit (for example, when a conductive conductive paste having a large area is coated on the bottom surface of the substrate 2). Therefore, in order to avoid this, the above heat conduction passage 22 can be further improved. Referring to Figure 4, the thermally conductive channel 22 in the substrate 2 includes two different first thermally conductive channels 220 and a second thermally conductive channel 222. The first heat conduction channel 220 extends downward from the top surface of the substrate 20 and terminates at a position inside the substrate 20 near the bottom surface of the substrate 20. The second heat conduction channel 222 extends upward from the bottom surface of the substrate 20 and terminates near the top surface of the substrate 20 inside the substrate 2 The first heat conduction passage 220 and the second heat conduction passage 222 are alternately disposed inside the substrate 20 and spaced apart from each other. Since neither the first heat conduction channel 220 nor the second heat conduction channel 222 penetrates through the substrate 20, even if a conductive material is adhered to the bottom surface of the substrate 20, the conduction with the lead 3〇 does not occur, so that the application of the light-emitting body is further improved. Safety. [0016] Of course, since the heat conduction channel 22 itself has electrical conductivity, it can also directly serve as a conductive path of the light-emitting element 10 as shown in FIG. 5 instead of the original pin 30 structure. The top end and the bottom end of the plurality of heat conduction channels 22 on each side of the substrate 20 are respectively connected by two pads 24 to be respectively connected to the semiconductor light source 40 and the outside. 099137173 Form No. A0101 Page 6 of 17 0992064852-0 201218467 [0017] It can be understood that the structure of the above heat conduction channel 22 is not limited to the LED substrate of the light emitting diode, and the same is applicable to the bonding LED. The circuit board shown in Fig. 6' shows a light-emitting element 1 different from the foregoing embodiments. The light-emitting element 1 includes a substrate 2A and a semiconductor light source i〇b fixed to the substrate 2A. The semiconductor light source 1b may be any one of the above-described embodiments or a light-emitting diode which does not have the heat-conducting passage 22. The latter is used in the present embodiment. The substrate 20a in this embodiment is a circuit board for electrically connecting to the semiconductor light source 10b, which corresponds to the semiconductor
光原1 Ob的位置處開設多個貫穿的通孔（圖未示），並在各 通孔内填充有形成導熱通道22a的高導熱材料，如金、銀 、銅、銘等。該基板2〇a與半導艘光源1〇b的基板貼A plurality of through holes (not shown) are formed at the position of the light source 1 Ob, and each of the through holes is filled with a highly thermally conductive material such as gold, silver, copper, or the like which forms the heat conduction path 22a. The substrate 2〇a is attached to the substrate of the semi-conducting light source 1〇b
以將半導體光㈣“作所1生的熱H過其導熱通 道22a快速進行傳輪，從而加速半導體光腦&的散熱。 基板20a同時與半導體光源⑽的引腳咖相接合，以將 電流傳輸進半導體光源1動。該基板2Ga内的導熱通道 22a並不局限於圖6中所揭示的結構，其還可以根據需求 變化為與圖2 - 5中各實施例所揭露的相同的結構。 [0018] 綜上所述，本發明符合發明專利要件，美依法提出專利 申請。惟’以上所述者僅為本發明之較佳實施例，舉凡 熟悉本案技藝之人士，在爰依本發明精神所作之等效修 飾或變化’皆應涵蓋於以下之申請專利範圍内。 【圖式簡單說明】 酬圖1示出了本發明第_實施例的發光元件的剖面圖 _冑2示出了本發明第二實施例的發光元件的剖面圖 [0021]圖3示出了本發明第三實施例的發光元件的固 099137173 表單編號A0101 笫7百/丛17百 曲圖 0992064852-0 201218467 [0022] 圖4示出了本發明第四實施例的發光元件的剖面圖。 [0023] 圖5示出了本發明第五實施例的發光元件的剖面圖。 [0024] 圖6示出了本發明第六實施例的發光元件的剖面圖。 [0025] 【主要元件符號說明】 發光元件：10 [0026] 半導體光源：10b [0027] 基板：20 [0028] 基板：20a [0029] 基板：20b [0030] 導熱通道：22 [0031] 導熱通道：22a [0032] 第一導熱通道：220 [0033] 第二導熱通道：222 [0034] 接墊：24 [0035] 引腳：30 [0036] 引腳：30b [0037] 輸入段：32 [0038] 外接段：34 [0039] 連接段：36 [0040] 半導體光源：40 表單編號A0101 099137173 第8頁/共17頁 0992064852-0 201218467 [0041] 封裝體：50 [0042] 金線：60The heat of the semiconductor light (4) is rapidly propagated through its heat conduction path 22a, thereby accelerating the heat dissipation of the semiconductor light brain & the substrate 20a is simultaneously bonded to the pin of the semiconductor light source (10) to carry current The heat transfer passage 22a in the substrate 2Ga is not limited to the structure disclosed in FIG. 6, and may be changed to the same structure as that disclosed in the respective embodiments of FIGS. [0018] In summary, the present invention meets the requirements of the invention patent, and the United States legally filed a patent application. However, the above description is only a preferred embodiment of the present invention, and those who are familiar with the skill of the present invention are in the spirit of the present invention. Equivalent modifications or variations are to be included in the scope of the following claims. [Simplified Description of the Drawings] FIG. 1 shows a cross-sectional view of a light-emitting element of the first embodiment of the present invention. Cross-sectional view of a light-emitting element according to a second embodiment of the invention [0021] FIG. 3 shows a solid-state 099137173 of a light-emitting element according to a third embodiment of the present invention. Form No. A0101 笫7/Bundle 17-Hundred Diagram 0992064852-0 201218467 [0022] Figure 4 Fig. 5 is a cross-sectional view showing a light-emitting element according to a fifth embodiment of the present invention. [0024] Figure 6 is a view showing a sixth embodiment of the present invention. [0025] [Main element symbol description] Light-emitting element: 10 [0026] Semiconductor light source: 10b [0027] Substrate: 20 [0028] Substrate: 20a [0029] Substrate: 20b [0030] Thermal conduction channel : 22 [0031] Thermal conduction channel: 22a [0032] First thermal conduction channel: 220 [0033] Second thermal conduction channel: 222 [0034] Pad: 24 [0035] Pin: 30 [0036] Pin: 30b [0037 Input section: 32 [0038] External section: 34 [0039] Connection section: 36 [0040] Semiconductor light source: 40 Form number A0101 099137173 Page 8 of 17 0992064852-0 201218467 [0041] Package: 50 [0042 ] Gold line: 60
099137173 表單編號A0101 第9頁/共17頁 0992064852-0099137173 Form No. A0101 Page 9 of 17 0992064852-0