201016387 • 六、發明說明： 【發明所屬之技術領域】 本發明通常係有關於-種用以從CMP拋光墊移除材料 的CMP拋光些修整器（如整平、撤光、修整等）。因此本 發明係關於化學、物理及材料科學的領域。 【先前技術】 半導體產業目前每年耗資超過千萬美元製造矽晶圓， 該石夕晶園必須呈現非常平坦、光滑的表面，所用來製造具 Φ 有光滑且平坦之表面的石夕晶圓的方法有报多種，其中最常 用之方法係化學機械研磨（CMP)製程，其包括結合研磨漿 並使用拋光墊。在所有CMP製程中最重要的就是能在各方 面獲得高效能，如拋光後晶圓之均勻性、積體電路（丨c)電路 系統的平滑性、產率上之移除率、CMP耗材使用壽命之經 濟性等。 【發明内容】 根據一實施例，本發明提供一 CMP拋光墊修整器，包 參 括複數研磨片段。例如在一態樣中係提供一 CMP拋光墊修 整器，其包括複數刀片狀的研磨片段，其中各刀片狀研磨 片段具有一延伸的刀片狀片段基質以及一附著於該刀片狀 片段基質的研磨層，該研磨層包括超硬研磨材料。該修整 器也包括複數顆粒狀研磨基質以及附著於該顆粒片狀片段 基質的研磨層’該研磨層包括複數超研磨顆粒。再者，該 修整器包括一抛光塾修整器基材’其中各刀片狀研磨片段 以及顆粒狀研磨片段能永久性地以一交替的圖案和一方向 附著在該抛光塾修整器基材，以使得在該拋光塾修整器與 201016387 該CMP拋光墊相對移動時，能夠藉由該研磨層將材料自 CMP拋光墊移除。 在本發明另一態樣係提供修整一 CMP拋光墊表面的方 法。這種方法包括相對移動一修整器表面與該CMp拋光墊 表面’因此S亥修整器表面交替性地刮除（shave)和犁整 (furrow)該CMP拋光墊表面。 在又一特定態樣中，形成一 CMP拋光墊調整器的方法 包括以所述的交替性排列將複數刀片狀研磨片段以及複數 〇 顆粒狀研磨片段以一方向定位於一拋光墊修整器表面的面 上，使得材料在該拋光墊修整器以及該CMp拋光墊相對移 動時能從CMP拋光墊上藉由該等研磨層而移除。該方法能 在包括永久性地結合該等複數刀片狀研磨片段以及該等複 數顆粒狀研磨片段於該拋光墊修整器表面。 現在僅概括性且較廣地描述出本發明的各種特徵，因 此在接下來的詳細說明中可更進一步地理解，並且在本領 域所做的貝獻可能會有更佳的領會，而本發明的其他特徵 將會從接下來的詳細說明及其附圖和申請專利範圍中變得 更為清晰’也可能在實行本發明時得知。 【實施方式】 在揭露與敘述本發明之前，需要了解本發明並非限制 於在此所揭露之特定的結構、方法步驟以及材料，而是可 延伸至所屬技術領域具通常知識者能思及之等效結構、方 法步驟及材料，應了解的是，在此所使用專有名詞的目的 只是在敘述特定實施例，並非意欲對本發明有任何的限制。 值得注意的是在本說明書及其申請專㈣圍所使用的 201016387 單數型態字眼如「一」和「 -白的指示為單數，不然這些 對象’因此例如「一研磨片 磨片段》 該」，除非在上下文中清楚明 單數型態的先行詞亦包括複數 段」包括一個或多個這樣的研 定義 以下是在本發明的說明及專利範圍中所出現之專有名 詞的定義。 ❹ 纟部的篩孔大小除了有特別註明，否則在這裡指的都 是美國篩孔尺寸，而且，篩孔大小通常都能了解為一定量 的顆粒之平均篩孔大小’即使每個顆粒於特定的篩孔大小 實際上可能為在小分布範圍内變動。 所述的「實質上（substantia丨丨y)」是指步驟、特性、性 質、狀態、結構、項目或結果的完全、接近完全的範圍或 程度。任意舉一個例子來說，當二個或多個物體被指出彼 此之間間隔有一「實質上」一致的距離，則可得知這兩個 ® 或多個物體彼此間隔有完全不可改變的距離，或彼此之間 有著非常接近不可改變之距離，而一般人無法察知其分別。 而離絕對完全確實可允許的偏差可在不同情況下^照特定 上下文來決定。然而，通常來說接近完全就如同獲得絕對 或完整的完全具有相同的總體結果。 所述的「實質上地」在當使用於負面含意亦同等適用， 以表示完全或接近完全缺乏步驟、特性、性質、狀維、片 構、項目或結果。任意舉一個例子來說，一「實質上沒有 (substantially free of)」外來物質的凹洞可為完全沒有外來 5 201016387 物質’或者非常近乎完全沒有外來物質，而其影響會如同 - 完全缺乏外來物質一樣。換句話說，一「實質上沒有」外 來物質的凹洞只要結果在孔洞沒有可測量的影響，則實際 上依然包含微小部分的外來物質。 所述的「基材（substrate)」係指支撐研磨材料之拋光 塾修整器的一部份，可貼附於該研磨材料和/或能承載研磨 材料之片段基質（segment blank)。本發明所用的基材可為 各種形狀、厚度或材料，其可用足以讓一拋光墊修整器達 ❿成所欲達到之目的的方式承載研磨材料。基材可為實心材 料粉末材料（加工後成為實心）或可撓性材料（f|exjbie material)典型基材的例子包括但不限制於金屬、金屬合 金、陶瓷、相對硬的聚合物或其他有機材料、玻璃及其混 合物。再者，該基材可包括能幫助研磨材料附著在該基材 上的材料，包括但不限制在硬焊合金材料、燒結助劑等。 所述的片段基質「（segment b丨ank)」係指與之前所定 義之拋光墊修整器的基材相似的結構。片段基質係用於本 發明以承載研磨層：將該等研磨層附著在該拋光墊修整器 之基材通常係藉由將該片段基質附著在該拋光墊修整器的 基材，重要的是要注意各種將該等片段基質附著在基材上 的方法以及各種將該等研磨層附著在片段基質的方法皆在 此討論。需要了解的是，這些在此所述的各種附著機制皆 能交換使用，即，當討論將一片段基質附著在基材上的方 法，所討論之附著方法也能用於將一研磨層附著於一片段 基質。然而，為了要討論之任何特別的cMP拋光墊修整器， 需要了解的是，該等將研磨層附著於片段基質的附著方法 201016387 月t*與用於將片段基質附著至該椒光墊修整器基材上的附著 …方·法不同或相同^ _ 所述的「幾何構型（geometr|c c〇nfigurati〇n)」係指能 夠以很陕被了解且辨認的數學術語來描述的形狀。例如， 被形容為「幾何構型」的形狀包括但不限制在立方體形狀、 多面體（包括正多面體）形狀、三角形（包括等邊三角形）、等 腰三角形以及3D三角形、角錐形、球形、矩形、「派」形 (pie shapes)、楔形、八邊形、圓形等。 所述的「氣相沉積法」是指一種藉由氣體相將物質沉 積在基材上的方法，其包括任何方法，例如但不限制在 化學氣相沉積法（chemical vapor deposmon，CVD)和物理 氣相沉積法（physical vapor deposition，PVD)，每一個氣 相沉積法的使用皆可由於本領域具通常知識者在不改變主 要原理的情況下做變動，因此該氣相沉積法的例子包括熱 燈絲氣相沉積法（hot filament CVD)、射頻化學氣相沉積法 (rf-CVD)、雷射化學氣相沉積法（laser CVD, LCVD)、雷射 剝離法（丨aser ab丨ation)、金屬有機物化學氣相沉積法 (metal-organic CVD，MOCVD)、濺鍍、熱蒸鍍物理氣相沉 積法（thermal evaporation PVD)、離子化金屬物理氣相沉 積法（ionized metal PVD，IMPVD}、電子束物理氣相沉積法 (electron beam PVD，EBPVD)以及反應性物理氣相沉積 法（reactive PVD)等其他類似的方法。 所述的「研磨輪廓（abrasive profile)」能被了解是指藉 由能用於從CMP拋光墊移除材料之研磨材料所定義的形 狀、構型或空間。研磨輪廓的例子包括但不限制在矩形、 201016387 端漸、，、田的矩形、戴面為楔形的形狀、楔形、鑛齒（saw 輪廓等。在一些實施例中，當材料從cMp拋光墊移除，而 CMP拋光墊被定向視為一平面時，藉由本發明之研磨片段 呈現的研磨輪廓是明顯的。 所述的磨餘表面（abrading surface)或「磨蝕點 (abrading point)」」可用以指研磨片段接觸cMP拋光墊 和自CMP抛光塾移除材料的表面、邊緣、自、點或尖端。 一般而έ，該磨蝕表面或點係當該研磨片段與cMp拋光墊 © 相互接觸時，該研磨片段最先與該CMP拋光墊接觸的部 分。 所述的「超硬（Supe「hard)」係指具有任何結晶、或多 晶材料或莫氏硬度（Mohr，s hardness)大約8或大於8之 材料的混合物。在一些態樣中，莫氏硬度可大於9或大於 9，這種材料包括但不限制於鑽石、多晶鑽石（pcD)、立方 氮化硼（CBN)、多晶立方氮化硼（PcBN)、金剛砂（⑺丨叫仙㈨ 和藍寶石，以及其他所屬技術領域中具有通常知識者所知 的超硬材料《超硬材料能以各種不同的形式（包括顆粒、沙 礫、薄膜、層狀結構、片狀、片段等)與本發明結合。在一 些情形中，本發明之超硬材料係採多晶超硬材料的形式， 如PCD和PcBN材料。 所述的「有機材料（organic matehl)」係指有機化合 物的半固體或固體複合物或混合物。其中，「有機材料層」 和「有機材料基質」可互換使用，係指一層或—團有機S化·" 合物的半固體或固體無晶型混合物，包括樹脂、高分子、 膠等。較佳的是，有機材料係由一或多個單體進行= 201016387 反應所形成的聚合物或共聚合物。在一些情形中，這種有 機材料可為黏著劑。 -- ......201016387 • VI. Description of the Invention: [Technical Field of the Invention] The present invention generally relates to CMP polishing trimmers (e.g., leveling, evacuating, trimming, etc.) for removing material from a CMP pad. The invention is therefore in the field of chemistry, physics and materials science. [Prior Art] The semiconductor industry currently spends more than 10 million US dollars per year to manufacture silicon wafers. The stone garden must have a very flat and smooth surface, which is used to make a stone wafer with a smooth and flat surface. A variety of methods have been reported, the most common of which is the chemical mechanical polishing (CMP) process, which involves combining a slurry with a polishing pad. The most important thing in all CMP processes is the ability to achieve high performance in all aspects, such as wafer uniformity after polishing, smoothness of integrated circuit (丨c) circuitry, removal rate in yield, use of CMP consumables. Economics of life, etc. SUMMARY OF THE INVENTION According to one embodiment, the present invention provides a CMP pad dresser comprising a plurality of abrasive segments. For example, in one aspect, a CMP pad dresser is provided that includes a plurality of blade-shaped abrasive segments, wherein each blade-shaped abrasive segment has an extended blade-like segment substrate and an abrasive layer attached to the blade-shaped segment substrate The abrasive layer comprises a superhard abrasive material. The trimmer also includes a plurality of particulate abrasive substrates and an abrasive layer attached to the particulate sheet-like segment substrate. The abrasive layer comprises a plurality of superabrasive particles. Furthermore, the dresser includes a polishing 塾 conditioner substrate wherein each of the blade-shaped abrasive segments and the particulate abrasive segments are permanently attached to the polishing 塾 conditioner substrate in an alternating pattern and in a direction such that The material can be removed from the CMP pad by the polishing layer as the polishing pad conditioner moves relative to the 201016387 CMP pad. Another aspect of the invention provides a method of trimming the surface of a CMP pad. The method includes relatively moving a dresser surface with the CMp pad surface so that the S-Wheeler surface alternately shaves and furrows the CMP pad surface. In yet another particular aspect, a method of forming a CMP pad conditioner includes positioning the plurality of blade-shaped abrasive segments and the plurality of particle-shaped abrasive segments in a direction of a polishing pad conditioner surface in an alternating arrangement The surface is such that the material can be removed from the CMP polishing pad by the polishing layer as the polishing pad conditioner and the CMp polishing pad are relatively moved. The method can include permanently incorporating the plurality of blade shaped abrasive segments and the plurality of particulate abrasive segments on the surface of the polishing pad conditioner. The various features of the present invention are now described broadly and broadly, and thus may be further understood in the following detailed description, and may be better appreciated in the field, and the present invention Other features will become apparent from the following detailed description and the appended claims and claims. The present invention is not limited to the specific structures, method steps, and materials disclosed herein, but may be extended to those of ordinary skill in the art. The use of the proper terminology herein is for the purpose of describing particular embodiments and is not intended to limit the invention. It is worth noting that the 201016387 singular typefaces used in this specification and its application (4) are such as "one" and "-white indications are singular, otherwise these objects" are for example "one abrasive piece grinding". Unless the context clearly dictates that the singular number of the singular forms includes the plural, "including one or more such definitions." The following is a definition of the proper nouns that appear in the description of the invention and the scope of the patent.筛 The size of the mesh of the crotch is not only specified, but it refers to the size of the mesh in the United States. Moreover, the size of the mesh is usually known as the average mesh size of a certain amount of particles. The mesh size may actually vary within a small distribution. The term "substantia" refers to the complete, near-complete extent or extent of a step, characteristic, nature, state, structure, item, or result. As an example, when two or more objects are indicated to have a "substantially" consistent distance from each other, it can be known that the two or more objects are completely unchangeable from each other. Or they are very close to each other, and the average person cannot see the difference. Deviations from absolute absolute allowable deviations can be determined in different situations depending on the specific context. However, in general it is almost as complete as obtaining absolute or complete results with the same overall result. The phrase "substantially" is equally applicable when used in a negative sense to indicate complete or near complete lack of steps, characteristics, properties, dimensions, structures, items or results. As an example, a "substantially free" foreign matter can be completely free of foreign materials. 5 or 201010387 Substance' or very near no foreign matter, and its effects will be like - completely lack of foreign matter same. In other words, a pit that is "substantially free of" foreign matter will actually contain a small amount of foreign matter as long as the result has no measurable effect in the hole. By "substrate" is meant a portion of a polishing reticle that supports an abrasive material that can be attached to the abrasive material and/or a segment blank that can carry the abrasive material. The substrate used in the present invention can be of a variety of shapes, thicknesses or materials which can be used to carry the abrasive material in a manner sufficient for a polishing pad conditioner to achieve the desired purpose. The substrate may be a solid material powder material (solid after processing) or a flexible material (f|exjbie material). Examples of typical substrates include, but are not limited to, metals, metal alloys, ceramics, relatively hard polymers, or other organic materials. Materials, glass and mixtures thereof. Further, the substrate can include materials that aid in the attachment of the abrasive material to the substrate, including but not limited to brazing alloy materials, sintering aids, and the like. The segment substrate "segment b丨ank" means a structure similar to that of the substrate of the polishing pad conditioner previously defined. Fragmented substrates are used in the present invention to carry an abrasive layer: the abrasive layers are attached to the substrate of the polishing pad conditioner, typically by attaching the segment substrate to the substrate of the polishing pad conditioner, it is important to It is noted that various methods of attaching the fragment substrates to a substrate and various methods of attaching the abrasive layers to the fragment matrix are discussed herein. It will be appreciated that the various attachment mechanisms described herein can be used interchangeably, that is, when discussing the method of attaching a segment of a substrate to a substrate, the attachment method discussed can also be used to attach an abrasive layer to A fragment of the matrix. However, for any particular cMP pad dresser to be discussed, it is to be understood that the method of attaching the abrasive layer to the segment substrate is used to attach the segment substrate to the pepper pad conditioner. The attachment on the substrate is different or the same as ^ _ The "geometr|cc〇nfigurati〇n" refers to a shape that can be described in mathematical terms that are well understood and recognized. For example, shapes that are described as "geometric" include, but are not limited to, cube shapes, polyhedral (including regular polyhedron) shapes, triangles (including equilateral triangles), isosceles triangles, and 3D triangles, pyramids, spheres, rectangles, Pie shapes, wedges, octagons, circles, etc. The "vapor deposition method" refers to a method of depositing a substance on a substrate by a gas phase, which includes any method such as, but not limited to, chemical vapor deposmon (CVD) and physics. The vapor deposition method (PVD), the use of each vapor deposition method can be changed by those skilled in the art without changing the main principle, and thus examples of the vapor deposition method include heat. Hot filament CVD, radio frequency chemical vapor deposition (rf-CVD), laser chemical vapor deposition (laser CVD, LCVD), laser lift-off (丨aser ab丨ation), metal Metal-organic CVD (MOCVD), sputtering, thermal evaporation PVD, ionized metal PVD (IMPVD), electron beam Other similar methods such as electrochemical beam deposition (EBVD) and reactive physical vapor deposition (reactive PVD). The "abrasive profile" can be Refers to the shape, configuration, or space defined by the abrasive material that can be used to remove material from the CMP pad. Examples of abrasive profiles include, but are not limited to, rectangles, 201016387, and rectangles. Wedge shape, wedge shape, mineral tooth (saw profile, etc.. In some embodiments, when the material is removed from the cMp polishing pad and the CMP pad is oriented as a plane, the grinding is represented by the abrasive segments of the present invention The profile is obvious. The abrading surface or "abrading point" can be used to refer to the surface, edge, self, and point of the abrasive segment contacting the cMP polishing pad and removing material from the CMP polishing pad. Or a tip. Generally, the abraded surface or point is the portion of the abrasive segment that first contacts the CMP pad when the abrasive segment is in contact with the cMp pad. The "super hard (Supe "hard "" means a mixture of materials having any crystalline or polycrystalline material or Mohr, s hardness of about 8 or greater. In some aspects, the Mohs hardness may be greater than 9 or greater than 9, such material Materials include, but are not limited to, diamonds, polycrystalline diamonds (pcD), cubic boron nitride (CBN), polycrystalline cubic boron nitride (PcBN), silicon carbide ((7) 仙 仙 九 (9) and sapphire, and other technical fields Superhard materials known to the skilled person "Superhard materials can be combined with the present invention in a variety of forms including particles, gravel, films, layered structures, flakes, fragments, and the like. In some cases, the superhard materials of the present invention are in the form of polycrystalline superhard materials such as PCD and PcBN materials. The term "organic matehl" means a semi-solid or solid composite or mixture of organic compounds. Among them, "organic material layer" and "organic material matrix" are used interchangeably, and refer to a semi-solid or solid amorphous mixture of a layer or a group of organic S-forms, including resins, polymers, gums, and the like. Preferably, the organic material is a polymer or copolymer formed by the reaction of one or more monomers = 201016387. In some cases, the organic material can be an adhesive. -- ......
所述的「硬焊（brazing)」製程係指在超研磨顆粒/材料 之碳·原子以及硬焊材料之間化學鍵的產生。再者，續「化 學鍵」係指共價鍵，如碳化物、氮化物或硼化物鍵，而非 機械的或微弱的原子間吸引力，因此，當「硬焊」用於連 接超研磨顆粒時，就會形成真實的化學鍵。然而，當「硬 焊」被用於金屬與金屬之間的鍵結時，該詞棄即為一更傳 統之意義一冶金的連接。因此超研磨片段硬焊於工具本體 並不需要碳化物形成物的出現。 所述的「顆粒（particle)」和「砂礫（grit)」能互換使用。 所述的「研磨層（abrasive)」係指能夠從CMp拋光髮 移除（如㈣、拋光、料（sefaping))的各難構一研磨 層能包括其上或其内部具有許多切割點、脊平台的塊體。 值得注意的是這種切割點、脊、平台可形成有許多凸部或 凹部而涵蓋在該塊體裡。再者，-研磨層可包括複數個獨 立的研磨顆粒，其僅具有形成在其上或表面的一切割點、 脊或平台。-研磨層也可包括複合塊體如PCD片片我 或基質可個別包括研磨層或共同包括研磨声。 所述的「金屬的（metallic)」係指金屬、或兩種或更多 m。金屬材料的各種態樣皆可為於所屬技術領域 、有通常知識者所熟知，特別是包括但不限制在鋼、鐵 以及不鏽鋼。 们牡蜩鐵 這裡所述的複數個物 料，基於方便可出現在— 品、結構元件、 叙的常見列舉中 、、且成元素和/或材 ，然而這些列舉 201016387 可解釋為列舉中的單一構件單獨或個別地被定義，因此， 這樣列舉中的單-構件不能視為任何單獨基於在—般族群 中無相反表示之解釋的相同列舉中實際上相等的其他構 件。 濃度、數量以及其他數值上的資料可是以範圍的形式 來加以呈現或表示，而需要瞭解的是這種範圍形式的使用 僅基於方便陡以及簡潔，因此在解釋時，應具有相當的彈 性’不僅包括在範圍中明碟顯示出來以作為限制之數值， 響同時亦可包含所有個別的數值以及在數值範圍t的次範 圍，如同每一個數值以及次範圍被明確地引述出來一般❶ 例如一個數值範圍「約彳到約5」應該解釋成不僅僅 包括明確引述出來的大約！到大約5，同時還包括在此指 定範圍内的每一個數值以及次範圍，因此，包含在此一數 值範圍中的每一個數值，例如2、3及4，或例如U、2_4 以及3-5等的次範圍等，也可以是個別的】、2、 34 _ 和5。此相同原則適用在僅有引述一數值的範圍中，再者， 這樣的閣明應該能應用在無論是一範圍的幅度或所述的特 徵中。 本發明 本發明大體而言係提供一拋光墊修整器以及相關方 法，以用來修整（如整平、研磨、修整）或其他影響一 cMp 拋光墊以將材料自該CMP拋光墊移除，而提供拋光墊具有 光α、平整和/或平坦的表面。本發明之拋光墊修整器係 有助於如修整用於研磨、磨光或其他影響矽晶圓的〇Μρ拋 201016387 . 光墊。 —現已發現增進CMP拋-光墊的修整能藉由在同樣的修整 操作_交替使用切割以及犁整而達成，這樣的達成能藉由 使用一包含具呈交替性樣式排列之刀片狀研磨片段以及顆 粒狀研磨片段修整表面CMP拋光墊修整器，因此當該CMp 拋光墊修整器相對於該CMP拋光墊移動時，該CMp拋光 墊的表面能交替性地以刀片狀研磨片段切割並以顆粒狀研 磨片段荦整。 i 除此之外，藉由將顆粒狀研磨片段交錯放置於鄰近的 刀片狀研磨片段之間，則刀片狀研磨片段使該CMp拋光墊 擠壓為最小化。如一示範性的例子，與一具有較緊密相鄰 刀片研磨片段之CMP拋光墊修整器相較下，一具有遠離設 置之刀片狀研磨片段的CMP拋光墊修整器需較大之向下擠 壓以助於切割，係由於該等研磨片段之間的CMP拋光墊材 料會朝上冒出。一具有較緊密設置研磨片段之CMP拋光墊 修整器有助於該拋光墊以更少的擠壓力量就能完成切割， > 因此減少該拋光墊過度切割的傷害。藉由交錯顆粒研磨片 段於鄰近的刀片研磨片段之間，所需要修整該CMP拋光墊 的擠壓力量能夠減少，因為在研磨片段之間之拋光墊材料 的犬出係為最小化。當許多現有精密之此抛光製程需要使 用柔軟材料製成之CMP拋光墊時；此種建構將特別有效。 這種軟性材料在使用較低之修整器擠壓力量時可更有效率 地修整，係因為當自修整器施加壓力時，此材料之特性使 其可承受較高程度之變形。例如在一態樣中，該軟性材料 能如既有的聚氨酯（polyurethane)拋光墊一樣軟。在另一態 11 201016387 ’ 樣中，該軟性材料能比既有的聚氨酯（po|yu「ethane)拋光墊 二還軟。在又一態樣中’該軟性材料能至少比既有的聚氨酯 (polyurethane)拋光墊軟約10%。又於另一態樣中，該軟性 材料能至少比既有的聚氨酯（P〇|yurethane)拋光墊軟約 25%。再於一態樣中，該軟性材料能至少比既有的聚氨酯 (polyurethane)抛光墊軟約50%。在一特定態樣中，如第一 圖所示係提供一拋光墊修整器（10)，該拋光墊修整器包括 複數刀片狀研磨片段（12)以及複數顆粒狀研磨片段（14)交替 〇 排列定位於一拋光墊修整器基材（16)。可考慮多種交替性 的排列，包括但不限制在如第一圖所示的放射狀（「adja丨）排 列。應注意的是，在此所提及的該等刀片狀研磨片段以及 該顆粒狀研磨片段為了簡潔的目的而總稱為「研磨片段」； 同樣地，為了簡潔的緣故，「研磨層」之用語可用於總稱 該等刀片狀研磨層以及該等顆粒狀研磨層。 該CMP拋光墊修整器亦能包含複數環狀研磨片段，相 對於如第一圖所示的單環結構。再者，應注意的是交替的 參 研磨片段也能包括聚集複數具有一或多個研磨片段之圖案 的排列，例如在一態樣中，該研磨片段能包含二個或更多 交替於各對顆粒研磨片段之間的刀片狀研磨片段。在另一 態樣中，該研磨片段的圖案包括三個或更多交替於各對顆 粒研磨片段之間的刀片狀研磨片段。除此之外，在一些態 樣中’複數顆粒研磨片段能聚集且交替於刀片狀研磨片段 或片段群組（group)之間。 該拋光墊修整器基材（1 6)能依照設計之拋光墊修整器 的應用而有所不同’但在一態樣中係包括一研磨片段固定 12 201016387 於其上之面’以提供該拋光墊修整器可用於研磨、切割或 其他將材料從一 CMP搬光塾（圖中未示）移除材料的面。該 等研磨片段能永久性地以一方向結合於該拋光墊修整器 (16)，以至於在該拋光墊修整器以及該拋光墊相對移動時 能夠將該CMP拋光墊藉由該研磨層移除材料。例如，第一 圖所描述且顯示的，該等研磨片段（12，14)係放射狀地沿著 實質上圓形的拋光墊修整器基材邊緣排列，這種排列已發 現在該拋光墊修整器基材相對於該拋光墊轉動時，適於將 © 材料從一 CMP拋光墊移除（當「修整」該拋光墊時）。 本發明提供許多優於既有裝置的優點，其中一項優點 係能夠依照指定規格將該研磨層附著於該片段基質的方 法，係獨立於將該片段基質或該等基質附著於該拋光墊修 整器基材的方法。例如，當所試圖使用的拋光墊修整器具 有大的或複雜的表面積時，而各種附著方法可能涉及很高 的溫度和/或壓力、很高要求的環境條件、或單純要求高密 集勞力，以明顯、簡單操作的片段基質執行該附著方法能 霧 改善附著程序的成本、效能以及完整性；另外，若將片段 基質分離而呈相對小的部份，則能更容易將各片段基質上 之研磨層的構成物整平，所產生的複數研磨片段也同樣地 更容易在研磨層個別附著於各研磨片段後，於該拋光墊修 整器基材之面上被定位、整平、形成間隔、定向等。 此外’藉由獲得複數研磨片段，各具有一研磨層已附 著於其上，該拋光墊修整器基材的面上之一研磨圖案係被 設計為能最有效地進行各種修整程序。例如，在鄰近的研 磨片段之間之間隔能謹慎地選擇而有助於或更能控制各種 13 201016387 流體（如研磨漿）在該等研磨片段周圍或穿過該等研磨片段的 流動1以增加材料移徐製程的破率及效能。而且，如第一 圖所不，具有不同研磨輪廓（如不同尺寸、形狀、研磨侵入 等）的片段基質能用於一單一基材上，以能夠客製化該拋光 墊修整器之磨蝕輪廓的整體。 研磨片段的多種構型係依照CMp拋光墊之特性或依預 期之修整特性做為考量。在一態樣中，其係示範於第二A 圖，各顆粒研磨片段（14)包括一片段基質（18)以及附著於該 ❹ 片段基質的一研磨層（20)，該研磨層（20)能包括一超硬研磨 材料.如第二A圖所例示的實施例，該超硬研磨材料包括 複數超研磨顆粒（22)。 在又一態樣中，其係例示於第二B圖，一刀片狀研磨 片段（12)包括一片段基質（24)以及一附著於該片段基質的研 磨層（26)，以作為延伸切割刀片。這些刀片係包括明顯比 寬度長的長度’其係類似於既有刀具上之刀片，在本發明 之此態樣中，該刀片能用於從該CMP拋光墊切割、刮除 ❹ （scraPe)或切刻（carve)—相對寬之長條狀（swath)材料。該 刀片狀研磨片段的研磨層（26)包括一連續性切割邊緣（28)。 在另一態樣中，例示於第二C圖，一刀片狀研磨片段（12) 包括一片段基質（30)以及一附著於該片段基質的研磨層 (32) ’以作為延伸切割刀片。與此態樣相比，示於第二b 圖中的該片段基質之研磨層（32)包括一系列形成在該研磨 層中的切割鋸齒（34)。更進一步關於結構上之細節以及刀 片狀研磨片段的使用揭露於2007年11月13曰提出申請 之美國專利申請案第60/987,687號，其可合併於此作為參 14 201016387 考。 該刀片狀研磨片我的切割動作現顯示有利於一 CMP拋 光墊的修整。例如第三A至三c圖所示，一實施例顯示幫 助關於一 CMP拋光墊（例示性的顯示且以剖面圖顯示為42) 可塑性變形所產生的問題。此實施例減少在該拋光墊調整 器以及該CMP拋光墊之間所需的下壓力，因此，CMp拋 光墊留下一具有被修整之表面，其係比使用既有方法所得 到的更加平滑且平整》 ® 在第二A至三C圖所示的修整器係包括一研磨層 (44)(僅顯示部分），該研磨層包括一切割面（46),其相對於 該CMP拋光墊之被研磨表面呈9〇度或更小之角度（如該切 割面相對移動遠離該被研磨表面—係有時作為一正向切割 角）。該研磨層（44)的面（46)能被定向，以使得該拋光墊修 整器（在第三A圖所標的方向48)以及該CMP拋光墊（42)相 對移動時能使切割面將材料從CMP拋光墊移除乾淨，以修 整該CMP拋光墊。 禱 藉由調整該切割面（46)相對於該拋光墊（42)之被研磨表 面呈90度或更小的角度，該修整製程能乾淨地自該拋光墊 刮除一層拋光墊材料，在該拋光墊上所產生的表面係能安 全地用於CMP製成中，而不會破壞昂貴的矽晶圓。本發明 之拋光墊修整器甚至能用來刮除該拋光墊上非常淺、薄的 材料層’而在該拋光墊上留下乾淨、平滑以及更平坦的表 面。此技術能用於移除薄層的硬化層，該硬化劑係形成在 該CMP拋光墊的表面上。 顯示於第二A及二B圖的切割面（46)係定向於相對节 15 201016387 GMP拋光墊被研磨表面呈大約9〇度的角度^彳，第三c圖 …的切割面—（5〇)係定命於相—對該「拋光墊被研磨表面1小 於90度的角度αζ’約為60度。該切割面能定向於各種角 度，且在一實施例中係相對該CMP拋光墊被研磨表面為約 45度至約90度。已發現縮小角度能夠在該切割元件與該 拋光墊之間產生更尖銳的切割界面。 這些顯不於圖式中的實施例包括調整過角度的切割 面，各調整過角度的切割面包括形成具有該對應角度的一 β 切割面。然而，在-些實施例中，應該了解能使用相對直 角（如90度）的切割面，但具有切割面形成其上的切割片段 在附著於該基材時會形成「傾斜（川ted)」的情形除外；換 句話說，該切割表面不能相對於該研磨片段呈現角度，而 是該研磨片段本身的角度而產生該切割表面的角度，以此 方式長1供調整過角度的切割面，而無須要求該研磨片段 上（或其中）形成參考角度。 纟本發明中所使用額外且多樣之研磨片段亦被考量， 例如，在使用上而考量各種切割元件/研磨片段的使用能詳 細地參考於2006年2月17日提出申請之美國申請案第 1’357,713號’其係能合併於本案作為參考。除此之外， 在片段基質上形成之研磨層能藉由各種不同的技術來達 成’包括但不限制在氣相沉積技術，其係與概略於2006年 8月29日提出申請之美國專利申請案第號相 似，且其可合併於此作為參考。除此之外該研磨片段之 構成係使用陶究材料元件（如同該片段基質和/或研磨層任一 或二者）、電鑛技術等。 16 201016387 如第四圖所示的實施例係供一系列的研磨層（54 54， --54’’)，各包括一—定位於不同高度-的切割尖端。於本發明之 一態樣中，在前的研磨片段（研磨層（54)形成一部分）通常係 相對於在後的研磨層（54'，54">處於較高的位置，而該在 後的研磨層於該在前的刀片通過後仍無法接觸存留的拋光 塾材料。該具有研磨層（54，54·，54")之研磨片段能以各種 方法形成，且具有各種形狀、尺寸以及構型，更詳細地， 如在2007年11月16曰提出申請之美國暫時申請案第 ^ 60/988,643號能夠整體合併於此作為參考。此實施例能刻 意地使用階梯狀（cascaded)的切割元件以達到所要的切割 效果。 很多材料以及製造方法皆能考慮用以建構本發明之 CMP拋光墊修整器。應該注意的是在此所揭露的該等材料 以及技術皆為例示性的，且額外的材料以及技術皆能使用 而不脫離本發明之範疇。 藝在此所顯不及討論的各種片段基質能以各種材料所製 成，包括但不限制在金屬材料（如鋁、銅、鋼、金屬合金等）、 陶瓷材料、玻璃、高分子、複合材料等。一般而言，實際 上任何能讓研磨片段附著的材料就能夠使用。 在一些實施例中，在將該研磨層附著片段基質之製程 中；其材料之選擇係為提供更優越的效果。該研磨層能以 各種不同的方式附著於該片段基質，包括環氧樹脂接合 (bonding)法（如有機接合方法）、金屬硬焊燒結、電沉積 等，能依照所預設的附著方法而選擇片段基質的材料，例 如，部分或全部由鎳或不鏽鋼所組成的片段基質能使用在 17 201016387 一些有關硬焊和/或燒結製程，而陶瓷材料或金屬材料可用 於有機附著^法中。一 —— 一..... _ 本發明各種實施例使用各種附著該研磨層至該片段基 質的方法。在一態樣中，一有機材料層能沉積於該片段基 質，且一或多個研磨顆粒、片、片段等能藉由該有機材料 層固定在該片段基質。適合之有機材料的範例包括但不限 制在胺基樹脂（amino resins)、丙烯酸酯樹脂（acry|ate resins)、醇酸樹脂（alkyd resins)、聚酯樹脂（p〇|yeSter resins)、聚醯胺樹脂（polyamide resins)、聚亞醯胺樹脂 (polyimide resins)、聚氨酯樹脂（po 丨 yurethane resins)、紛 醛樹脂（phenolic resins)、酚醛/乳膠樹脂（phenolic/latex resins)、環氧樹脂（epoxy resins)、異氰酸酯樹脂（isocy£mate resins)、異氰尿酸酯樹脂（isocyanurate resins)、聚矽氧烷 樹脂（polysiloxane resins)、反應型乙烯基樹脂（reactive vinyl resins)、聚乙烯樹脂（polyethylene resins)、聚丙稀 樹脂（polypropylene resins)、聚苯乙烯樹脂（polystyrene resins)、苯氧樹脂（phenoxy resins)、二萘嵌苯樹脂 (perylene resins)、聚石風樹月旨（polysulfone resins)、丙烤腈 -丁二稀-苯乙烯共聚物（acrylonitrile-butadiene-styrene resins)、丙烯酸樹脂（acrylic resins)、聚碳酸酯樹脂 (polycarbonate resins)及其混合物。 所謂的「逆澆注（reverse casting)」法能夠用於準確且 可控制地將該研磨材料定向及附著在該片段基質上（且將該 片段基質定位和附著於該拋光墊修整器基材），這種方法包 括首先使用一「光罩」材料固定一超研磨材料（如複數超研 18 201016387 磨顆粒）至一基材上’接著部分突出於光罩材料的顆粒使用 -在此所討論過的方法附著於該拋光墊修整器基材，在此之 後或在此期間能移除該光罩材料。 適合的逆洗注法能夠在本案發明人的各種專利及專利 申請案中找到，包括在2007年12月6曰申請的美國申請 案第60/992,966號、在2007年5月16日申請的美國申 凊案第11/804,221號、以及在2007年5月22曰申請的 美國申請案第1 1/805,549號，其皆可合併於此作為參考， 當將本發明該等研磨片段附著於拋光墊修整器基材時、當 將本發明該等研磨層附著於該等片段基質時皆能使用這些 技術。這種技術可提供非常準確地控制該等研磨片段或研 磨層的橫向設置，也能非常準確地控制該等研磨片段或研 磨層的相對高度。 當使用一有機結合材料層時，於所屬技術領域中具有 通常知識者能夠知道各種硬化該有機材料層的方法，以使 參有機材料產生相變化而從至少一柔軟的狀態到至少一堅硬 的狀態，硬化能夠藉由但不限制在將該有機材料接觸熱形 式的能量、電磁輻射（如紫外線、紅外線以及微波幅射）、粒 子撞擊（如電子束）、有機觸媒、無機觸媒或其他於所屬技術 領域中具有通常知識者所熟知的硬化技術。 於本發明之一態樣中，該有機材料層可為熱塑性材料， 熱塑性材料能可逆地分別藉由冷卻和加熱而硬化或軟化。 在另一態樣中，該有機材料層可為熱固性材料，熱固性材 料無法像熱塑性材料一樣可逆地硬化和軟化；換句話說， 一旦產生硬化現象’該製程實質上為不可逆。 19 201016387 有機材料更細節之表如下所列，有機材料在本發明之 --實施例中係有甩的，包括但不限制在胺基樹腊具有烷基化 脲醛樹脂（alkylated urea-formaldehyde resins)、三聚氰胺 甲醛樹脂（melamine_forma丨dehyde resins)以及烧基化笨 代三聚氰胺甲搭樹脂（alkylated benzoguanamine-formaldehyde resins);丙烯酸酯樹脂（acrylate resins)包 括乙稀丙稀酸酯（vinyl acrylates)、環氧丙稀酸酯（acrylated epoxies)、聚敦醋丙稀酸西旨（acrylated urethanes)、、丙稀 © 酸酯樹脂（acrylate resins)、聚酯丙稀酸酯（aery丨ated polyethers)、乙烯醚（vinyl ethers)、丙烯酸油（aery 丨 ated oils)、梦酮丙烯酸酯（aery lated silicons)以及相關的丙稀酸 酯（methacry丨ates);醇酸樹脂（alkyd resins)如聚氨酯酸醇 樹月旨（urethane alkyd resins);聚酯樹脂（polyester resins); 聚酿胺樹脂（polyamide resins);聚亞醯胺樹脂（polyimide resins);反應型氨酉旨樹脂（reactive urethane resins);聚 氨酯樹脂（polyurethane resins);盼搭樹脂（phenolic . resins)，如盼少醒多的酚搭樹月旨（resole resins)以及盼多搭 少的酚链樹脂（novolac resins);酚酿/乳膠樹脂 (phenolic/latex resins);環氧樹脂（epoxy resins)，如二酚 環氧樹脂（bisphenol epoxy resins);異氰酸酯樹脂 (isocyanate resins);異氰尿酸酯樹脂（isocyanurate resins);聚石夕氧炫樹脂（polysiloxane resins)包括烧基燒氧 基矽樹脂（3丨1^丨3丨1<(^731丨3116「631(15);反應型乙烯基樹脂 (reactive vinyl resins);標有 BakeliteTM 商標的樹脂，包 括聚乙烯樹脂（polyethy丨ene resins)、聚丙烯樹脂 20 201016387 (polypropylene resins)、環氧樹脂（epoxy resins)、酚醛樹 音（phenolic resins)、聚某匕烯樹脂（polystyrene cesins)、 苯氧樹脂（phenoxy resins)、二萘嵌笨樹脂（pery|ene resins)、聚颯樹脂（polysulfone resins)、氣乙烯共聚合物 樹脂（ethylene copolymer resins)、丙婦腈-丁二烯 _笨乙烯 共聚物（acrylonitrile-butadiene-styrene resins, ABS)、乙 烯基樹脂（vinyl resins);丙烯酸樹脂（acrylic resins);聚碳 酸酯樹脂（polycarbonate resins)以及其混合物或組合物。 ® 在本發明之一態樣中，該有機材料可為環氧樹脂。在另一 態樣中，該有機材料可為聚亞酿胺樹脂。又一態樣中，該 有機材料可為聚氨酯樹脂。 很多添加物能包含在該有機材料中以幫助其使用。例 如’能使用額外的交聯劑以及填充劑以改善該有機材料層 硬化的特性。除此之外，可使用溶劑已改變該有機材料在 未硬化狀態的特性。也能配置一強化材料於至少部份之硬 ❹化有機材料層令，此種強化材料可用於增加該有機材料層 的強度，且因此更進一部增加各別研磨片段的保持度；在 一態樣中，該強化材料可包括陶材、金屬或其組合物陶 材的範例包括氧化鋁、碳化鋁、二氧化矽、碳化矽、氧化 錯、碳化錘及其混合物。 此外，在一態樣中，可將耦合劑或有機金屬化合物塗 佈於各研磨材料的表面上，以藉由化學鍵結而幫助該超研 磨材料保持在該有機材料層中。於所屬技術領域中具有通 常知識者能知道且能使用各種有機和有機金屬化合物。有 機金屬麵合劑能在該等超研磨材料以及該有機材料基質之 21 201016387 間產生化學鍵’因而增加該等超研磨材料在其中的保持度。 如此，該有機麵射祕作為__橋樑而在該有機材料基 質以及該超研磨材料表面之間形成鍵結。在本發明之—態 樣中’該有機金屬耦合劑可為欽酸_咖）、錯酸醋 (zirconate)、石夕甲垸或其混合物。所用之有機金屬偶合劑 的量係依㈣合劑的種類以及該超研磨材料的表面積而 疋，通常必須是該有機材料層重量之〇 〇5%至1〇%才會足 夠0The "brazing" process refers to the generation of chemical bonds between the carbon atoms of the superabrasive particles/material and the brazing material. Furthermore, the continued "chemical bond" refers to a covalent bond, such as a carbide, nitride or boride bond, rather than a mechanical or weak interatomic attraction, so when "hard soldering" is used to join the superabrasive particles. , will form a real chemical bond. However, when "hard soldering" is used for the bonding between metal and metal, the word is a more traditional meaning-metallurgical connection. Therefore, the superabrasive segments are hard soldered to the tool body and do not require the appearance of carbide formers. The "particle" and "grit" are used interchangeably. By "abrasive" is meant that each of the hard-to-wear layers that can be removed from the CMp polishing (eg, four, polishing, sefaping) can include a plurality of cutting points, ridges thereon or therein. The block of the platform. It is worth noting that such cutting points, ridges, and platforms can be formed with a plurality of protrusions or recesses to be encompassed in the block. Further, the abrasive layer can comprise a plurality of individual abrasive particles having only one cutting point, ridge or platform formed thereon or on the surface. The abrasive layer may also comprise a composite block such as a PCD sheet or the substrate may individually comprise an abrasive layer or collectively comprise a grinding sound. The term "metallic" means metal, or two or more m. Various aspects of metallic materials are well known to those skilled in the art and include, but are not limited to, steel, iron, and stainless steel. Oyster Iron The plurality of materials described herein may be present in a common list of articles, structural elements, and articles, and elements and/or materials based on convenience. However, these enumerations 201016387 may be interpreted as a single component in the list. Individually or individually defined, therefore, the single-members in such an enumeration should not be considered as any other component that is substantially equivalent based on the same list in the ordinary group without the opposite representation. Concentrations, quantities, and other numerical data may be presented or represented in a range, and it is important to understand that the use of this range of forms is based on convenience and simplicity, and therefore should be fairly flexible when interpreted. Including the value displayed in the range as a limit, the sound can also contain all the individual values and the sub-range of the value range t, as each value and sub-range are explicitly quoted. ❶ For example, a range of values "About about 5" should be interpreted as including not only the explicit quoted! Up to about 5, including every value and sub-range within the specified range, therefore, each value included in this range of values, such as 2, 3, and 4, or such as U, 2_4, and 3-5 The sub-range of the equals, etc., may also be individual, 2, 34 _, and 5. This same principle applies to the range in which only one value is recited. Further, such a cabinet should be applicable to either a range of magnitudes or the characteristics described. The present invention generally provides a polishing pad conditioner and associated method for trimming (e.g., leveling, grinding, trimming) or otherwise affecting a cMp polishing pad to remove material from the CMP pad. The polishing pad is provided with a light alpha, flat and/or flat surface. The polishing pad conditioner of the present invention is useful for trimming, polishing or otherwise affecting the wafer. 201016387. Light pad. - It has been found that the improvement of the CMP polishing pad can be achieved by the same finishing operation _ alternating cutting and plowing, which can be achieved by using a blade-like grinding piece arranged in an alternating pattern. And a granulated abrasive segment trimming surface CMP pad dresser such that when the CMp pad conditioner is moved relative to the CMP pad, the surface of the CMp pad can be alternately cut with a blade-like abrasive segment and in a granular shape Grinding the pieces. i In addition to this, by interlacing the particulate abrasive segments between adjacent blade-like abrasive segments, the blade-like abrasive segments squeeze the CMp polishing pad to a minimum. As an exemplary example, a CMP pad dresser having a blade-like abrasive segment that is remote from the set needs to be squeezed down to a greater extent than a CMP pad dresser having a closer adjacent blade abrading segment. Helps cutting because the CMP pad material between the abrasive segments will rise upwards. A CMP pad dresser with a tighter set of abrasive segments helps the pad to complete the cutting with less squeezing force, > thus reducing the damage of the polishing pad from overcutting. By interlacing the particle-milling segments between adjacent blade-milling segments, the squeezing force required to condition the CMP pad can be reduced because the dog-out of the polishing pad material between the abrasive segments is minimized. This construction is particularly effective when many existing precision polishing processes require the use of CMP polishing pads made of soft materials. This soft material can be more effectively trimmed when using a lower dresser squeezing force because the material is subjected to a higher degree of deformation when the self-dressing device applies pressure. For example, in one aspect, the soft material can be as soft as an existing polyurethane polishing pad. In the other state 11 201016387 ', the soft material can be softer than the existing polyurethane (po|yu "ethane) polishing pad 2. In another aspect, the soft material can at least be more than the existing polyurethane ( The polishing pad is about 10% softer. In another aspect, the soft material can be at least about 25% softer than the existing polyurethane (P〇|yurethane) polishing pad. In one aspect, the soft material It can be at least about 50% softer than an existing polyurethane polishing pad. In a particular aspect, as shown in the first figure, a polishing pad conditioner (10) is provided, the pad dresser comprising a plurality of blades The abrasive segment (12) and the plurality of particulate abrasive segments (14) are alternately arranged in a polishing pad substrate (16). A variety of alternating arrangements are contemplated, including but not limited to those shown in the first figure. Radial ("adja丨" arrangement. It should be noted that the blade-like abrasive segments and the granular abrasive segments referred to herein are collectively referred to as "abrasive segments" for the sake of brevity; likewise, for the sake of brevity For the sake of the term "abrasive layer" A generic term for such a blade-like polishing layer and polishing such a particulate layer. The CMP pad dresser can also comprise a plurality of annular abrasive segments, as opposed to a single ring structure as shown in the first figure. Furthermore, it should be noted that alternating reference grinding fragments can also include an arrangement of a plurality of patterns having one or more abrasive segments, for example, in one aspect, the abrasive segments can comprise two or more alternating pairs. A blade-like abrasive segment between the particles of the abrasive segments. In another aspect, the pattern of the abrasive segments comprises three or more blade-like abrasive segments alternating between the respective pairs of abrasive segments. In addition, in some aspects, the 'plural particle abrasive segments can aggregate and alternate between blade-like abrasive segments or group of segments. The polishing pad conditioner substrate (16) can vary depending on the application of the polishing pad conditioner designed to be 'but in one aspect includes an abrasive segment mounting 12 201016387 on top of it' to provide the polishing The pad conditioner can be used to grind, cut or otherwise remove material from a CMP transfer (not shown). The abrasive segments can be permanently bonded to the polishing pad conditioner (16) in a direction such that the polishing pad can be removed by the polishing layer while the polishing pad conditioner and the polishing pad are relatively moved material. For example, as depicted and shown in the first figure, the abrasive segments (12, 14) are radially aligned along the edge of a substantially circular polishing pad conditioner substrate that has been found to be trimmed on the polishing pad. When the substrate is rotated relative to the polishing pad, it is adapted to remove the © material from a CMP polishing pad (when "trimming" the polishing pad). The present invention provides a number of advantages over existing devices, one of which is the ability to attach the abrasive layer to the segment substrate in accordance with a specified specification, independently of attaching the segment substrate or the substrate to the polishing pad. The method of the substrate. For example, when the polishing pad conditioner that is intended to be used has a large or complex surface area, various attachment methods may involve high temperatures and/or pressures, highly demanding environmental conditions, or simply require high intensive labor to The apparently simple operation of the fragment matrix to perform the attachment method can improve the cost, efficacy and integrity of the attachment procedure; in addition, if the fragment matrix is separated into relatively small portions, it is easier to grind the fragments on each of the fragments. The composition of the layer is leveled, and the resulting plurality of abrasive segments are also more easily positioned, leveled, spaced, oriented on the surface of the polishing pad conditioner substrate after the polishing layer is individually attached to each of the abrasive segments. Wait. Further, by obtaining a plurality of abrasive segments each having an abrasive layer attached thereto, one of the polishing patterns on the face of the polishing pad conditioner substrate is designed to perform various finishing procedures most efficiently. For example, the spacing between adjacent abrasive segments can be carefully selected to facilitate or more control the flow of various 13 201016387 fluids (eg, slurry) around or through the abrasive segments to increase The rate and efficiency of the material migration process. Moreover, as in the first figure, a segmented substrate having different abrasive profiles (e.g., different sizes, shapes, abrasive intrusions, etc.) can be used on a single substrate to be able to customize the abrasive profile of the polishing pad conditioner. overall. The various configurations of the abrasive segments are based on the characteristics of the CMp polishing pad or on the expected conditioning properties. In one aspect, which is illustrated in Figure 2A, each particle abrasive segment (14) includes a segment matrix (18) and an abrasive layer (20) attached to the matrix of the matrix, the abrasive layer (20) A superhard abrasive material can be included. As exemplified in Figure 2A, the superabrasive material comprises a plurality of superabrasive particles (22). In another aspect, which is illustrated in Figure 2B, a blade-shaped abrasive segment (12) includes a segment substrate (24) and an abrasive layer (26) attached to the segment substrate to serve as an extended cutting blade. . These inserts include a length that is significantly longer than the width 'which is similar to the insert on an existing tool. In this aspect of the invention, the insert can be used to cut, scrape, or scrape from the CMP pad. Carve—a relatively wide swath material. The abrasive layer (26) of the blade-like abrasive segment includes a continuous cutting edge (28). In another aspect, illustrated in Figure 2C, a blade-shaped abrasive segment (12) includes a segment substrate (30) and an abrasive layer (32)' attached to the segment substrate to serve as an extended cutting blade. In contrast to this aspect, the abrasive layer (32) of the segment substrate shown in Figure 2b includes a series of cutting serrations (34) formed in the abrasive layer. Further details regarding the structural details and the use of the blade-like abrasive segments are disclosed in U.S. Patent Application Serial No. 60/987,687, filed on Nov. 13, 2007, which is incorporated herein by reference. The cutting action of the blade-shaped abrasive sheet now shows that it is advantageous for the trimming of a CMP polishing pad. For example, as shown in Figures 3A through 3c, an embodiment shows the problems associated with plastic deformation associated with a CMP pad (exemplary display and shown as 42 in cross-section). This embodiment reduces the downforce required between the pad conditioner and the CMP pad, so that the CMp pad leaves a surface that is trimmed, which is smoother than that obtained using existing methods. The finisher shown in Figures 2A through 3C includes a polishing layer (44) (display portion only) that includes a cutting face (46) that is opposite to the CMP pad The abrasive surface is at an angle of 9 degrees or less (e.g., the cutting surface is relatively moved away from the surface being polished - sometimes as a positive cutting angle). The face (46) of the abrasive layer (44) can be oriented such that the polishing pad conditioner (in the direction 48 indicated in Figure A) and the CMP pad (42) are relatively movable to enable the material to be cut The CMP pad is removed from the CMP pad to trim the CMP pad. Praying by adjusting the cutting surface (46) at an angle of 90 degrees or less with respect to the surface to be polished of the polishing pad (42), the trimming process can cleanly scrape a layer of polishing pad material from the polishing pad, The surface created on the polishing pad can be safely used in CMP fabrication without damaging expensive silicon wafers. The polishing pad conditioner of the present invention can even be used to scrape a very shallow, thin layer of material on the polishing pad while leaving a clean, smooth, and flatter surface on the polishing pad. This technique can be used to remove a thin layer of hardened layer formed on the surface of the CMP pad. The cutting faces (46) shown in Figures 2A and 2B are oriented at opposite segments 15 201016387. The GMP polishing pad is angled at an angle of about 9 degrees to the surface being polished, and the cutting surface of the third c-plane...(5〇 The system is destined to the phase - the angle α ζ ' of the polishing pad surface 1 being less than 90 degrees is about 60 degrees. The cutting surface can be oriented at various angles, and in one embodiment is ground relative to the CMP pad The surface is from about 45 degrees to about 90 degrees. It has been found that the reduced angle creates a sharper cutting interface between the cutting element and the polishing pad. These embodiments, which are not shown in the drawings, include an angled cutting surface. Each of the angled cutting faces includes forming a beta cut surface having the corresponding angle. However, in some embodiments, it should be understood that a cut face that is relatively right angle (e.g., 90 degrees) can be used, but with a cut face formed thereon Except for the case where the cut piece forms a "tilt" when attached to the substrate; in other words, the cut surface cannot be angled with respect to the abrasive segment, but the angle of the abrasive segment itself produces the Cutting The angle of the face, adjusted in this manner for the length 1 of the cut surface through an angle, without requiring the milling segment (or) forming a reference angle. The additional and varied abrasive segments used in the present invention are also contemplated, for example, the use of various cutting elements/grinding segments in use can be referred to in detail in U.S. Application Serial No. 1 filed on Feb. 17, 2006. '357, 713' can be incorporated in this case for reference. In addition, the abrasive layer formed on the segment substrate can be achieved by a variety of different techniques, including but not limited to vapor deposition techniques, which are related to U.S. patent applications filed on August 29, 2006. The number of the case is similar and can be incorporated herein by reference. In addition to this, the abrasive segments are constructed using ceramic material elements (as with either or both of the segment substrates and/or abrasive layers), electrominening techniques, and the like. 16 201016387 The embodiment as shown in the fourth figure is for a series of abrasive layers (54 54, - 54''), each comprising a cutting tip positioned at a different height. In one aspect of the invention, the preceding abrasive segment (the portion of the abrasive layer (54) is formed) is generally in a higher position relative to the subsequent abrasive layer (54', 54"> The abrasive layer is still inaccessible to the retained polishing material after the preceding blade passes. The abrasive segment having the abrasive layer (54, 54·, 54") can be formed in various ways and has various shapes, sizes, and configurations. </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; To achieve the desired cutting effect. Many materials and manufacturing methods can be considered to construct the CMP pad dresser of the present invention. It should be noted that the materials and techniques disclosed herein are exemplary and additional. Materials and techniques can be used without departing from the scope of the invention. The various fragment matrices that are not discussed herein can be made from a variety of materials including, but not limited to, metallic materials ( Aluminum, copper, steel, metal alloys, etc., ceramic materials, glass, polymers, composite materials, etc. In general, virtually any material that allows the abrasive segments to adhere can be used. In some embodiments, The polishing layer is attached to the substrate of the segment; the material is selected to provide a superior effect. The polishing layer can be attached to the segment substrate in various different ways, including epoxy bonding methods (such as organic bonding methods). ), metal brazing, electrodeposition, etc., can select the material of the segment matrix according to the preset adhesion method, for example, a segment matrix partially or entirely composed of nickel or stainless steel can be used in 17 201016387 some related to brazing and / or sintering process, and ceramic materials or metal materials can be used in the organic adhesion method. One - one ..... - Various embodiments of the invention use various methods of attaching the abrasive layer to the segment substrate. In the sample, an organic material layer can be deposited on the segment substrate, and one or more abrasive particles, sheets, fragments, etc. can be fixed to the sheet by the organic material layer. Matrix. Examples of suitable organic materials include, but are not limited to, amino resins, acry|ate resins, alkyd resins, polyester resins (p〇|yeSter resins), Polyamide resins, polyimide resins, po 丨yurethane resins, phenolic resins, phenolic/latex resins, epoxy resins (epoxy resins), isocyanate resins, isocyanurate resins, polysiloxane resins, reactive vinyl resins, polyethylene resins (reactive vinyl resins) Polyethylene resins), polypropylene resins, polystyrene resins, phenoxy resins, perylene resins, polysulfone resins, C Acryliconitrile-butadiene-styrene resins, acrylic resins, polycarbonate Fat (polycarbonate resins), and mixtures thereof. The so-called "reverse casting" method can be used to accurately and controllably orient and adhere the abrasive material to the segment substrate (and to position and attach the segment substrate to the polishing pad conditioner substrate), This method involves first using a "mask" material to hold a superabrasive material (such as a plurality of super-grinding 18 201016387 abrasive particles) onto a substrate - followed by partial use of the particles of the reticle material - as discussed herein The method is attached to the polishing pad conditioner substrate, after which the reticle material can be removed. Suitable backwashing methods can be found in various patents and patent applications of the inventor of the present application, including U.S. Application No. 60/992,966, filed on December 6, 2007, and filed on May 16, 2007. U.S. Patent Application Serial No. 11/804, 221, the entire disclosure of which is incorporated herein by reference in its entirety, the entire disclosure of the entire disclosure of the disclosure of the disclosure of These techniques can be used when the substrate is trimmed and when the abrasive layers of the present invention are attached to the segment substrates. This technique provides very precise control of the lateral placement of the abrasive segments or abrasive layers and also allows for very precise control of the relative height of the abrasive segments or abrasive layers. When an organic bonding material layer is used, those having ordinary skill in the art can know various methods of hardening the organic material layer to cause the phase change of the reference organic material from at least a soft state to at least a hard state. Hardening can be achieved by, but not limited to, contacting the organic material with heat in the form of heat, electromagnetic radiation (such as ultraviolet light, infrared light, and microwave radiation), particle impact (such as electron beam), organic catalyst, inorganic catalyst, or other Hardening techniques well known to those skilled in the art are known in the art. In one aspect of the invention, the organic material layer can be a thermoplastic material that can be reversibly hardened or softened by cooling and heating, respectively. In another aspect, the layer of organic material can be a thermoset material that does not reversibly harden and soften like a thermoplastic material; in other words, once a hardening phenomenon occurs, the process is substantially irreversible. 19 201016387 A more detailed list of organic materials is listed below. The organic materials are entangled in the examples of the present invention, including but not limited to, alkylated urea-form aldehyde resins, Melamine_forma丨dehyde resins and alkylated benzoguanamine-formaldehyde resins; acrylate resins including vinyl acrylates, epoxy propylene Acrylates epoxies, acrylated urethanes, acrylate resins, aery丨ated polyethers, vinyl ethers ), aery 丨ated oils, aery lated silicons and related methacry 丨ates; alkyd resins such as urethane alkyd Resins);polyester resins;polyethylene resins;reactive ammonia hydrazine Reactive urethane resins; polyurethane resins; phenolic resins, such as resole resins and phenolic resin (novolac resins) ); phenolic/latex resins; epoxy resins such as bisphenol epoxy resins; isocyanate resins; isocyanurate resins Polysiloxane resins include calcined alkoxy oxime resin (3丨1^丨3丨1<(^731丨3116"631(15); reactive vinyl resins) ); BakeliteTM branded resin, including polyethy丨ene resins, polypropylene resin 20 201016387 (polypropylene resins), epoxy resins, phenolic resins, polydecene Polystyrene cesins, phenoxy resins, pery|ene resins, polysulfone resins, ethylene copolymers Acryliconitrile-butadiene-styrene resins (ABS), vinyl resins; acrylic resins; polycarbonate resins and a mixture or composition thereof. ® In one aspect of the invention, the organic material can be an epoxy resin. In another aspect, the organic material can be a poly-styliamine resin. In another aspect, the organic material can be a polyurethane resin. Many additives can be included in the organic material to aid its use. For example, an additional crosslinking agent and a filler can be used to improve the hardening characteristics of the organic material layer. In addition to this, the use of a solvent has changed the properties of the organic material in an uncured state. A reinforcing material can also be disposed on at least a portion of the hardened organic material layer, the reinforcing material can be used to increase the strength of the organic material layer, and thus further increase the retention of the individual abrasive segments; Examples of the reinforcing material may include ceramic materials, metals or combinations thereof. Examples of ceramic materials include alumina, aluminum carbide, cerium oxide, cerium carbide, oxidized oxidized, carbonized hammer, and mixtures thereof. Further, in one aspect, a coupling agent or an organometallic compound may be applied to the surface of each of the abrasive materials to assist in maintaining the superabrasive material in the organic material layer by chemical bonding. A wide variety of organic and organometallic compounds can be known and used by those of ordinary skill in the art. The organic metal facing agent can create a chemical bond between the superabrasive material and the organic material matrix 21 201016387 thereby increasing the retention of the superabrasive material therein. Thus, the organic surface acts as a bridge to form a bond between the organic material matrix and the surface of the superabrasive material. In the aspect of the invention, the organometallic coupling agent may be caprylic acid, zirconate, orthoquinone or a mixture thereof. The amount of the organometallic coupling agent used depends on the type of the (IV) mixture and the surface area of the superabrasive material, and usually must be 〇 5% to 1% by weight of the organic material layer to be sufficient.
適合用於本發明之矽曱烷特定但非限制的範例包括3_ 甲基三乙醯氧基矽甲烷〔3_ g|ydd〇xypr〇py|tr|meth〇xy silane，購自道康寧公司（D〇w Corning)，型號為z-6040〕、 曱基丙烯醯氧基丙基三甲氧基矽甲烷〔^-methacry丨〇xy propy丨trimethoxy silane，購自聯合碳化公司（union Carbide Chemicals Company)，型號為 A-174〕、石-(3,4-环氧環 己烧）乙基三甲氧基石夕甲烧 〔β -(3,4-epoxycyclohexyl)ethyltrimethoxy silane〕、r-氨丙基三 乙氧基矽曱烧〔r - aminopropyltriethoxy si丨ane)、N- ( /3 -氨乙基）-T-氨丙基甲基二曱氧基矽甲烷（N-(冷-aminoethyl)- γ -aminopropylmethyldimethoxy silane，購 自聯合碳化物公司（Union Carbide)、信越化學工業株式會 社（Shin-etsu Kagaku Kogyo K.K.)等〕。 適合用於本發明之鈦酸鹽耦合劑特定但非限制的範例 包括異丙基三硬酯酸鈦酸酯 〔isopropy丨triisostearoyl titanate〕、二（異丙苯基）氧乙酸酯鈦酸酯〔 di(cumylphenylate)oxyacetate titanate〕、4-氨基笨磺醢 22 201016387 氟十 二烷基 苯磺酸 鈦酸酯 〔4-amtnobenzenes^ulfonyldodeey4benzenesulfonyl· -44tanate 〕、四辛基雙（二三葵基亞磷酸）鈥酸酯〔tetraoctylbis (ditridecylphosphite) titanate〕、異丙基三（N-氨基乙基-氨基乙基）鈦酸酯〔isopropyltri(N-ethylamino-ethylamino) titanate，購自美國肯瑞奇石油化工有限公司（Kenrich Petrochemicals, Inc.)〕、新烷氧基鈦酸酯（neoalkyoxy titanates)，例如型號 LICA-01、LICA-09、LICA-28、LICA-44 ❹ 以及LICA-97(也是購自Kenrich)等。 銘耦合劑特定但非限制的範例係包括醋酸烷氧基二異 丙氧基銘〔acetoalkoxy aluminum diisopropylate，購自橘 生藥品工業株式會社（Ajinomoto K.K.)〕等。 錯酸醋耦合劑特定但非限制的範例係包括新烷氧基鍅 酸醋〔neoalkoxy Zirconates，型號為 lz-〇1、LZ-09、LZ- 12、 LZ-38、LZ-44、LZ-97 ’全部皆購自美國肯瑞奇石油化工有 限公司（Kenrich Petrochemicals，lnc_}〕等，其他已知的 ❹有機金屬耦合劑〔如硫醇基化合物（thiolate based compounds)〕能用於本發明且被考慮在本發明之範疇中。 金屬硬焊法也能應用於將該研磨層附著至片段基質， 於所屬技術領域中具有通常知識者係熟知金屬硬焊法，例 如’在製作鑽石顆粒研磨片段時，該製程包括混合鑽石顆 粒（如40/50美i網目（mesh)之磨料）以及適當的金屬支 基質（結合）粉末（如具有1·5微米㈣粉末）；接著該混合物 係壓在:模具中，以形成一預期的形狀（如-鑛子片段）；該 工具的「生胚」接著係在溫度為购2〇『c之間燒結而： 23 201016387 化’並形成具有複數研磨顆粒設置於其中的單一塊體；最 -·- 後’.該硬化的塊體係(如以硬焊方式）拊著於該工具主體，如 鋸子的圓形刀片，以形成最終產品。許多其他的範例皆能 用此技術，且為於所屬技術領域中具有通常知識者所熟知 的。 應該注意的是也能使用各種燒結方法將該研磨層附著 於該片段基質，於所屬技術領域中具有通常知識者在擁有 本發明内容後就能輕易地了解合適的燒結方法。 β 該研磨層也能藉由已知的電鍍和/或電沉積法附著於該 片段基質。如一個在電沉積之前或同時定位並保持該研磨 材料的適合方法之範例，係使用一包括能夠有效防止電沉 積材料累積在模具表面上之絕緣材料的模具，在電沉基時， 研磨顆粒能保持在該模具之模具表面上，因此，能防止電 沉積材料累積在顆粒尖端以及該拋光墊修整器基材之工作 表面上。這種技術係如於2005年12月2曰所提出之美國 專利申請案第11/292,938號中所描述的，其係能合併於本 ® 案作參考。 一個或多個孔延伸進該絕緣材料中，以供電解液從模 具外的區域經過該模具而循環至該拋光墊修整器的表面， 以幫助電沉積。這種循環有利於在電沉積位置上其電解液 中一般需要保持足夠之離子濃度◊也可使用其他已知的技 術’且能了解上述所提供的範例僅為多種適合技術中的其 申之一。 該片段基質能以各種方法類似地附著於該拋光墊修整 益基材，依據片段基質形成之材料，而能夠使用各種方法 24 201016387 固定該片段基質至該拋光墊修整器基材。適合的附著方法 包括但-不限制在有機鍵結—tiding)、硬焊s焊接 (welding)等。 該研磨片段的幾何構型可為各式各樣的。例如在—態 樣中’該研磨片段包括具有研磨材料層結合於一般矩形或 梯型之片段基質，該片段基質可為各種尺寸，在本發明之 一態樣中，片段尺寸能夠調整以達到鑽石顆粒/或切割刀片 均勻分布為一環型排列，各片段包括高違約一千顆鑽石顆 粒’在顆粒研磨片段中’各片段可包含複數鑽石顆粒；其 一組尖端間隔係為3至1 0倍之鑽石粒徑。較小的片段較能 夠分攤在修整時的負載力量。 本發明糸統的模組化性質（modular nature)使得將該研 磨層附著於片段基質時可提供很大的彈性。由於片段基質 能夠與該拋光墊修整器基材分開製備，所以當將該研磨層 施加至片段基質時，可以了解各種製作優勢，而無需在意 最後與該片段基質附著於其上之拋光墊修整器的尺寸、形 狀、質量、材料等。 在一態樣t，排列於該修整器基材之面上的研磨片段 係各別在尺寸、形狀、研磨物組成、與另一研磨片段之相 對高度等實質上相肖。在另—態樣中，尺寸、形狀、研磨 物組成、與另一研磨片段之相對高度等能有目的地不同， 以達到任何特定應用最適當的設計彈性（flexjbiMty);各前 述的品質也能夠在各個片段中有所不同，㈣隔的片段係 包括PCD研磨片、碎片、板’而相鄰的片段係包含研磨顆 粒0 25 201016387 該研磨片段在該拋光墊修整器基材上的保持度能夠藉 •…一由排列該等研—邊片段而改進，以使得在缶何個別之研磨片 段上的機械應力衝擊最小化。藉由減少在各研磨片段的應 力衝擊，該等研磨片段能夠輕易地保持在該基材上之適當 4置特別能應用在需精細處理的狀況中，各片段之間應 力變化之最小化能夠藉由均勻地（或一致地）間隔該等片段、 將各片段最高部分整平至均句的高度（相對於該拋光塾修整 斋的面）、將該等片段放射狀地排列在該拋光墊修整器基材 的面上而達成。各種其他高度以及間隔方法皆能使用以 達到預期的效果。 於本發明之另一實施例中，該等研磨片段的間隔能調 整而改變各片段之接觸部分的接觸壓力（如接觸並該cMp 拋光墊移除材料的部分片段）。通常，片段之間彼此間隔越 遠，在該片段與該CMP拋光墊之間的接觸壓力越高，因此， 在一些情況中，若於該拋光墊修整器基材面上之研磨片段 _ 具較南之密度’則在該拋光墊修整器基材以及該Cmp拋光 墊之間能提供一較理想之研磨界面。在其他應用中，較小 岔度之研磨片段可能是有益的。在任一情況中，本發明提 供很大的設計彈性以獲得最佳的研磨輪廓。 藉由形成具有特定幾何形狀之研磨片段於個別單元 中’該研磨片段以非常精確的方式來排列會變得更簡單， 當該明確幾何形狀從一片段至另一片段完全精確地被複 製’如此’各研磨片段在該拋光墊修整器面上應力衝擊的 位置可達完全一致，’例如，利用先前技術的研磨顆粒， 各複數顆粒的整體形狀以及尺寸可能與另一個顆粒有相當 26 201016387 大的不同，所以很難完成精確的顆粒排列。這些問題皆於 ·_ -本發明‘之優_點善徵中.充分地提也。 已發現商用的鑽石拋光墊修整器通常含有約一萬顆鑽 石顆粒，特別當一碟盤在用高溫製程（如硬焊）製作時，由於 該基材的扭曲以及該顆粒尺寸的分佈與鑽石定向，該切割 尖端會處於不同的高度；當該等切割尖端接觸一拋光墊時， 只有約1%的凸出鑽石能夠與該拋光墊接觸，此會增加鑽石 的應力而深入地切至該拋光墊内，且該鑽石可能會破裂而 Ο 在昂責的晶圓上造成嚴重的刮痕。 藉由使用如上所述之逆澆鑄方法，在顆粒之間的高度 差能夠顯著地降低。於本發明之一態樣中，該研磨片段係 設置於一具有在一保持環上形成設置之間隔的平坦金屬（如 不鏽鋼）模具上，與硬化劑充分混和之環氧樹脂被倒入該保 持環中以填滿並覆蓋於全部的片段，於該模具上的鑽石顆 粒能藉由環氧樹脂流的滲透而被遮蓋，在硬化（有加熱或無 加熱）後，移除該保持環以及該模具，該鑽石片段因此穩固 參地埋設於該環氧樹脂基質中，藉由該平坦模具對於鑽^'的 整平，使得最高之鑽石顆粒的尖端高度差異達最小化。 實施例 以下實施例提供各種製造本發明之拋光墊修整器的方 法。需要了解這種實施例僅供說明，並非用以限制本發明。 例1 ° 拋光墊修整器係藉由：首先將鑽石顆粒（如5〇/6〇網 目）排列在具有一黏結層（如丙烯酸樹脂）的不鏽鋼平板模具 27 201016387 上（有輕微的凸面或輪廊的模具也可以使用），使用—硬橡膠 ’材質以將個別的鑽石顆粒壓入該黏結層中，且顆粒的尖端 藉由該平板模具而整平，接著將環氧樹脂以及硬化劑的混 合物傾倒在突出於黏結層外的顆粒上（一擋止環定向於該模 具之外側以保留該環氧樹脂），硬化後，移除該模具，且剝 除該黏結層，所留下的有機鑽石碟（_)包括突出於該硬 化之環氧樹脂基材外的鑽石顆粒，而該環氧樹脂的背面係 以機械加工處理，且該碟盤黏附在具有為設置在CMP拋光 ^ 機而形成之固定孔的一不鏽鋼（如316不鏞鋼）平板。 例2 一拋光墊修整器係藉由放射狀地排列於具有鋸齒的 PCD刀片上所形成’如前述例子，該pcD刀片的鑛齒係以 模具而整平，以定位於該拋光墊修整器的底部或頂部， 接著如前述例子澆鑄環氧樹脂，在此情況中，該模具係於 頂部，而該刀片係稍微壓入一基材的狹長孔中，而該狹長 孔係由壞乳樹脂或梦膠封住。 例3 一密切結合於以上所述之例1與例2的複合設計’該 設計具有例1中許多切割尖端之平整性以及例2中的切割 效率。在例3中’藉由通常比環氧樹脂硬的纖維強化高分 子所形成之有機研磨片段，接著該有機片段放射性地排列 於一具有例2之刀片散置其中的拋光墊修整器基材，該等 刀片的切割尖端係被整平’以使其高出該有機研磨片段之 28 201016387 尖端力20微米。如此，藉此能控制該刀片切割錯齒的穿透 深度’而該有機切割鋸齒在修整拋光墊時係扮演次要的角 色，以有效地移除硬化層（g|aze)，且使該拋光墊形成凹槽。 需要瞭解的是以上所述之排列皆僅是在描述本發明原 則的應用，許多改變及不同的排列亦可以在不脫離本發明 之精神和範圍的情況下被於本領域具通常知識者所設想出 來’而申請範圍也涵蓋上述的改變和排列。因此，儘管本 發明被特定及詳述地描述呈上述最實用和最佳實施例於 〇 本領域具通常知識者可在不偏離本發明的原則和觀點的情 況下做許多如尺寸、材料、形狀、樣式、功能、操作方法、 組裝和使用等變動。 【圖式簡單說明】 第一圖係本發明一實施例示範性之拋光墊修整器的俯 視不意圖。 第二A圖係能用於第一圖之拋光墊修整器之示範性研 磨片段的放大立體示意圖。 ® 第一 B圖係係能用於第一圖之拋光塾修整器之示範性 研磨片段的放大立體示意圖。 第三A圖係具有切割面之研磨片段的側視示意圖，以 顯示從部分CMP拋光墊移除材料。 第三B圖係一具有不同構型之切割面的研磨片段的側 視示意圖，以顯示從部分CMP拋光墊移除材料。 第三C圖係一具有不同構型之切割面的研磨片段的側 視示意圖’以顯示從部分CMP拋光塾移除材料。 第四圖係具有一連串排列在不同高度的研磨片段之部 29 201016387 分CMP拋光墊修整器的側視示意圖。 •一 一 需要了解的是所附圖式僅是為進一步了解本發明而 為描述用途，該圖式並非依照尺寸繪製或顯示，因此在作 寸、粒徑大小以及其他態樣可能且通常是有誇飾情形，= 更清楚敘述本發明，例如，一研磨層係以一些包括複數研 磨顆粒的圖示來表示，然而，許多在此揭露之特定的實施 例並不需要包含研磨顆粒。因此，為製造本發明拋光墊修 整器，顯示於圖中之特定尺寸和態樣是會出現偏差的。 β 【主要元件符號說明】 (10)拋光墊修整器 (12)刀片狀研磨片段 (14)顆粒狀研磨片段 (16)拋光墊修整器基材 (18) (24) (30)片段基質 (20) (26) (32) (44) (54, 54·，54，·）研磨層 (22)超研磨顆粒 ® (28)切割邊緣 (34)切割鋸齒 (42) CMP拋光墊 (46) (50)切割面 (48)方向 30Specific but non-limiting examples of decane suitable for use in the present invention include 3-methyltriethoxy oxime methane [3_g|ydd〇xypr〇py|tr|meth〇xy silane, available from Dow Corning Corporation (D〇) w Corning), model z-6040, 曱-methacry丨〇xy propy丨trimethoxy silane, purchased from Union Carbide Chemicals Company, model number A-174], stone-(3,4-epoxycyclohexane)ethyl-trimethylsulfonylethyltrimethoxysilane,r-aminopropyltriethoxysilane (r-aminopropyltriethoxy si丨ane), N-( /3 -aminoethyl)-T-aminopropylmethyldimethoxyoxymethane (N-(col-aminoethyl)- γ-aminopropylmethyldimethoxy silane, purchased From Union Carbide, Shin-etsu Kagaku Kogyo KK, etc. A specific but non-limiting example of a titanate coupling agent suitable for use in the present invention includes isopropyl tristearate. Acidic titanate (isopropy丨triisostearoyl titanate), di(isopropylphenyl)oxyacetic acid Di(cumylphenylate)oxyacetate titanate, 4-amino sulfonate 22 201016387 Fluoric dodecylbenzenesulfonate titanate [4-amtnobenzenes^ulfonyldodeey4benzenesulfonyl·-44tanate], tetraoctyl double (two or three Tetradecylbis (ditridecylphosphite) titanate, isopropyltri(N-ethylamino-ethylamino) titanate, purchased from the United States (Kenrich Petrochemicals, Inc.), neoalkyoxy titanates, such as models LICA-01, LICA-09, LICA-28, LICA-44, and LICA-97 (also It is commercially available from Kenrich et al. The specific but non-limiting examples of the couplant include acetoalkoxy aluminum diisopropylate (available from Ajinomoto KK). Specific but non-limiting examples of the wrong vinegar coupling agent include neoalkoxy Zirconates (models lz-〇1, LZ-09, LZ-12, LZ-38, LZ-44, LZ-97) 'All purchased from Kenrich Petrochemicals (lnc_}), etc., other known bismuth organometallic coupling agents [such as thiolate based compounds) can be used in the present invention and It is contemplated within the scope of the present invention. Metal brazing can also be applied to attaching the abrasive layer to a segmented substrate, which is well known to those skilled in the art, such as 'in the making of diamond particle grinding segments The process includes mixing diamond particles (such as 40/50 US mesh mesh abrasives) and a suitable metal matrix (combined) powder (such as having a 1.5 micron (four) powder); then the mixture is pressed at: mold Medium to form a desired shape (eg, a mineral fragment); the "green embryo" of the tool is then sintered at a temperature between 2 and cc: 23 201016387 and formed with a plurality of abrasive particles disposed at its a single block; most -·- after '. The hardened block system (eg, brazed) squats on the tool body, such as a circular blade of a saw to form the final product. Many other examples can This technique is used and is well known to those of ordinary skill in the art. It should be noted that the abrasive layer can also be attached to the segment substrate using a variety of sintering methods, which are common to those skilled in the art. A suitable sintering method can be readily understood after the present invention. β The abrasive layer can also be attached to the segment substrate by known electroplating and/or electrodeposition methods, such as positioning and maintaining the electrode prior to or simultaneously with electrodeposition. An example of a suitable method for the abrasive material is to use a mold comprising an insulating material capable of effectively preventing the electrodeposited material from accumulating on the surface of the mold, and the abrasive particles can be held on the mold surface of the mold at the time of the sinking, thereby enabling Preventing the deposition of electrodeposited material on the tip of the particle and the working surface of the pad of the pad conditioner. This technique is as described on December 2, 2005. It is described in the patent application No. 11/292,938, which is incorporated herein by reference. Circulating to the surface of the pad conditioner to aid in electrodeposition. This cycle facilitates the general need to maintain sufficient ion concentration in the electrolyte at the electrodeposition site. Other known techniques can be used. The examples provided are only one of many suitable techniques. The segment substrate can be similarly attached to the polishing pad finishing substrate in various ways, depending on the material from which the segment matrix is formed, and can be fixed using various methods 24 201016387 The fragment is matrixed to the polishing pad conditioner substrate. Suitable attachment methods include, but are not limited to, organic bonding (tiding), brazing, welding, and the like. The geometry of the abrasive segments can be varied. For example, in the aspect - the abrasive segment comprises a segmented substrate having a layer of abrasive material bonded to a generally rectangular or ladder type, the segmented substrate can be of various sizes, and in one aspect of the invention, the segment size can be adjusted to achieve a diamond The particles/or cutting blades are evenly distributed in a ring-shaped arrangement, each segment comprising a high-definition of one thousand diamond particles 'in the particle-milled segment' each segment may comprise a plurality of diamond particles; a set of tip spacing is 3 to 10 times Diamond particle size. Smaller segments are more able to share the load power during trimming. The modular nature of the system of the present invention provides great flexibility in attaching the abrasive layer to the segment substrate. Since the segment substrate can be prepared separately from the polishing pad conditioner substrate, when the polishing layer is applied to the segment substrate, various manufacturing advantages can be understood without the need to care about the polishing pad conditioner to which the segment substrate is attached. Size, shape, quality, materials, etc. In one aspect t, the abrasive segments arranged on the surface of the conditioner substrate are substantially similar in size, shape, composition of the abrasive, relative height to another abrasive segment, and the like. In another aspect, the size, shape, composition of the abrasive, and the relative height of the other abrasive segments can be purposely different to achieve the most appropriate design flexibility (flexjbiMty) for any particular application; In each segment, the (four) septum segments include PCD abrasive sheets, chips, plates' and adjacent segments contain abrasive particles. 0 25 201016387 The retention of the abrasive segments on the polishing pad conditioner substrate can The ... is improved by arranging the grinding-edge segments to minimize mechanical stress shocks on any individual abrasive segments. By reducing the stress impact on each of the abrasive segments, the appropriate placement of the abrasive segments on the substrate can be particularly useful in situations where fine processing is required, and the minimization of stress variations between the segments can be The segments are evenly (or uniformly) spaced, the highest portion of each segment is leveled to the height of the uniform sentence (relative to the surface of the polished enamel), and the segments are radially arranged on the polishing pad. The surface of the substrate is achieved. Various other height and spacing methods can be used to achieve the desired results. In another embodiment of the invention, the spacing of the abrasive segments can be adjusted to change the contact pressure of the contact portions of the segments (e.g., contact with a portion of the cMp polishing pad to remove material). Generally, the farther apart the segments are from each other, the higher the contact pressure between the segments and the CMP pad, and therefore, in some cases, if the abrasive segments on the surface of the pad conditioner substrate are The South Density' provides a desirable abrasive interface between the polishing pad conditioner substrate and the Cmp polishing pad. In other applications, smaller lengths of abrasive segments may be beneficial. In either case, the present invention provides great design flexibility to achieve an optimum abrasive profile. By forming an abrasive segment having a specific geometry in an individual unit, it would be easier to arrange the abrasive segments in a very precise manner, when the explicit geometry is completely accurately copied from one segment to another. 'The position of the stress impact of each abrasive segment on the surface of the polishing pad finisher can be exactly the same, 'for example, using the abrasive particles of the prior art, the overall shape and size of each of the plurality of particles may be comparable to another particle 26 201016387 Different, so it is difficult to complete the precise particle arrangement. These problems are all in the _ _ the best _ point of the invention. Commercial diamond polishing pad conditioners have been found to typically contain about 10,000 diamond particles, especially when a disk is made in a high temperature process (such as brazing) due to the distortion of the substrate and the particle size distribution and diamond orientation. The cutting tips are at different heights; when the cutting tips contact a polishing pad, only about 1% of the protruding diamonds can contact the polishing pad, which increases the stress of the diamond and cuts deeply into the polishing pad. Inside, and the diamond may rupture and cause severe scratches on the reliant wafer. By using the reverse casting method as described above, the difference in height between the particles can be remarkably lowered. In one aspect of the invention, the abrasive segment is disposed on a flat metal (e.g., stainless steel) mold having a spacing formed on a retaining ring, and the epoxy resin sufficiently mixed with the hardener is poured into the retaining Filling and covering all the segments in the ring, the diamond particles on the mold can be covered by the penetration of the epoxy stream, after hardening (with or without heating), the retaining ring is removed and The mold, which is thus firmly embedded in the epoxy matrix, is flattened by the flat mold to minimize the difference in tip height of the highest diamond particles. EXAMPLES The following examples provide various methods of making the polishing pad conditioner of the present invention. It is to be understood that the examples are for illustrative purposes only and are not intended to limit the invention. Example 1 ° Polishing pad conditioner is by first arranging diamond particles (such as 5〇/6〇 mesh) on a stainless steel flat plate mold 27 201016387 with a bonding layer (such as acrylic resin) (with a slight convex or porch) The mold can also be used), using a hard rubber material to press individual diamond particles into the bonding layer, and the tip of the particle is leveled by the flat mold, then the mixture of epoxy resin and hardener is poured On the particles protruding beyond the bonding layer (a stop ring is oriented on the outer side of the mold to retain the epoxy resin), after hardening, the mold is removed, and the bonding layer is peeled off, leaving the organic diamond dish (_) includes diamond particles protruding beyond the hardened epoxy substrate, and the back side of the epoxy is mechanically processed, and the disc is adhered to have a fixing formed in the CMP polishing machine A stainless steel (such as 316 stainless steel) plate with holes. Example 2 A polishing pad conditioner is formed by radially arranging on a PCD blade having serrations. As in the foregoing example, the ore teeth of the pcD blade are leveled by a mold to be positioned in the pad conditioner. Bottom or top, followed by casting the epoxy as in the previous example, in which case the mold is attached to the top and the blade is slightly pressed into the elongated hole of a substrate which is made up of bad cream or dream Sealed with glue. Example 3 A composite design in which the above-described Examples 1 and 2 were closely combined. The design had the flatness of many cutting tips in Example 1 and the cutting efficiency in Example 2. In Example 3, 'the organic abrasive segment formed by the fiber-reinforced polymer which is usually harder than the epoxy resin, and then the organic segment is radioactively arranged in a polishing pad conditioner substrate having the blade of Example 2 interspersed therein, The cutting tips of the blades are flattened 'to make them 20 microns higher than the tip of the organic abrasive segment 201016387. In this way, the penetration depth of the cutting tooth of the cutting blade can be controlled, and the organic cutting sawtooth plays a secondary role in dressing the polishing pad to effectively remove the hardened layer (g|aze) and make the polishing The pad forms a groove. It is to be understood that the above-described arrangements are merely illustrative of the application of the principles of the present invention, and many variations and different arrangements can be conceived by those skilled in the art without departing from the spirit and scope of the invention. Come out' and the scope of the application also covers the above changes and arrangements. Accordingly, the present invention has been described with respect to the details of the embodiments of the invention and Changes in style, function, method of operation, assembly and use. BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a schematic view of an exemplary polishing pad conditioner of an embodiment of the present invention. The second A is an enlarged perspective view of an exemplary grinding section that can be used in the polishing pad conditioner of the first figure. ® First B is an enlarged perspective view of an exemplary abrasive segment that can be used in the polishing 塾 dresser of Figure 1. The third A is a side view of an abrasive segment having a cut surface to show removal of material from a portion of the CMP pad. Figure 3B is a schematic side view of an abrasive segment having a different configuration of cut faces to show removal of material from a portion of the CMP pad. The third C is a schematic side view of an abrasive segment having a different configuration of cut faces to show removal of material from a portion of the CMP polishing pad. The fourth figure has a series of sections of the abrasive segments arranged at different heights. 29 201016387 A side view of the CMP pad dresser. • It is to be understood that the drawings are only for the purpose of further understanding of the invention, and that the drawings are not drawn or displayed in terms of dimensions, and thus may be, and usually have, The present invention is more clearly described. For example, an abrasive layer is represented by some illustrations including a plurality of abrasive particles, however, many of the specific embodiments disclosed herein do not require the inclusion of abrasive particles. Therefore, in order to manufacture the polishing pad conditioner of the present invention, the specific dimensions and aspects shown in the drawings may be deviated. β [Major component symbol description] (10) Polishing pad dresser (12) Blade-shaped grinding segment (14) Granular grinding segment (16) Polishing pad conditioner substrate (18) (24) (30) Fragment matrix (20) ) (26) (32) (44) (54, 54·, 54,, ·) Abrasive Layer (22) Superabrasive Particles® (28) Cutting Edge (34) Cutting Sawtooth (42) CMP Polishing Pad (46) (50 ) cutting surface (48) direction 30