TW200841498A - Process for making contained layers and devices made with same - Google Patents

Process for making contained layers and devices made with same Download PDF

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Publication number
TW200841498A
TW200841498A TW096113046A TW96113046A TW200841498A TW 200841498 A TW200841498 A TW 200841498A TW 096113046 A TW096113046 A TW 096113046A TW 96113046 A TW96113046 A TW 96113046A TW 200841498 A TW200841498 A TW 200841498A
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Taiwan
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layer
rsa
radiation
organic
active layer
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TW096113046A
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Chinese (zh)
Inventor
Daniel David Lecloux
Eric Maurice Smith
Gray A Johansson
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Du Pont
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Priority claimed from US11/401,151 external-priority patent/US8124172B2/en
Application filed by Du Pont filed Critical Du Pont
Publication of TW200841498A publication Critical patent/TW200841498A/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

There is provided a process for forming a contained second layer over a first layer, including the steps: forming the first layer having a first surface energy; treating the first layer with a reactive surface-active composition to form a treated first layer having a second surface energy which is lower than the first surface energy; exposing the treated first layer with radiation; and forming the second layer. There is also provided an organic electronic device made by the process.

Description

200841498 九、發明說明: 【發明所屬之技術領域】 「般而言’本發明揭示内容係關於一種製造電子裝置之 方法本叙明進一步係關於藉由該方法製得之裝置。 【先前技術】 在許多不同種類的電子設備中 1有τ白存在利用有機活性材料 之電子裝置。在該等裝詈中,_ 置中一有機活性層係夾於兩個電 極之間。 # 一種類型之電子裝置係有機發光二極體(oled)。由於 OLED之高功率轉換效率及低處理成本,故希望其用於顯 不器應用。該等顯示器尤其希望用於電池供電之便攜式電 T裝置’其包:行動電話、個人數位助理、手持式個人電 腦及DVD播放器。該算庳用亞七g 一 寺應用要求顯不器除低功率消耗外具 有高資訊容量、全色及快速視訊速率相應時間。 目前在製造全色OLED中之硏穿仫t μ 、 Τ <研九係針對研發製造彩色像 素之成本》丈率、生產量方法。炎丄 沄為稭由液體處理製造單色 顯示器,已廣泛採用旋塗製程(參見例如^細及200841498 IX. Description of the Invention: [Technical Field of the Invention] "Generally speaking" the present disclosure relates to a method of manufacturing an electronic device. The present invention further relates to a device produced by the method. [Prior Art] In many different types of electronic devices, there is an electronic device using organic active materials in a white color. In these devices, an organic active layer is sandwiched between two electrodes. # One type of electronic device Organic light-emitting diodes (OLEDs). Due to their high power conversion efficiency and low processing cost, OLEDs are expected to be used in display applications. These displays are particularly desirable for battery-powered portable electrical T devices. Telephone, personal digital assistant, handheld personal computer and DVD player. This calculation uses the sub-seven g-one temple application to require the display device to have high information capacity, full color and fast video rate in addition to low power consumption.制造 μ μ μ μ μ μ μ μ μ μ 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 μ Straw is manufactured by liquid processing to produce monochrome displays, and spin coating processes have been widely used (see, for example,

AlanJ.Heeger,AppLPhys.Letters58, i982 (i99⑺。然 而,全色顯示器之製造需要對萝拌苗 言I 4早色顯示器所用程序進 行某些修改。舉例而言,為使—顯示器具有全色圖像,每 -顯示器像素皆分成三個子像素,每—子像素發射三種主 顯示器顏色紅色、綠色及藍芦中夕 ^ χ 邑中之—。將全色像素分成三 個子像素導致需要修改目前方法 月J力忐以防止液體著色材料 (即’油墨)擴展及顏色混合。 120l97.doc 200841498 文獻中已Μ述若干提供油墨圍包之方^該等係基於圍 包結構、表面張力不連續性及二者之組合。圍包結構係針 對擴展之幾何障礙物:像素井、堤等。為了使該等結構有 效,其必須大,與所沈積材料之濕厚度相當。當將發光油 墨印刷於該等結構中時,由於其在該結構表面上係渴的, 因此靠近該結構之厚度均勾性降低。因此,必須將該等結 構移出發射「像素」區域以便在作業中看不到不均句性。 由於顯示器(尤其高分辨率顯示器)上之有限空間,此降低 =料之有效發射區。當沈積電荷注人及傳輸層之連續層 牯,貫際圍包結構通常對品質具有負面影響。因此,所有 層必須皆經印刷。 =外,當有低表面張力材料之㈣或氣體沈積區域時獲 付表面張力不連續性。讀笙 德去「Λ 料低表面張力材料通常必須在該 ::區中印刷或塗佈該第—有機活性層之前施加。通常, 連㈣發光層時,料處理之使用影響品質,因此 所有層必須皆經印刷。 兩種油墨圍包技彳軒^ 辛井、 、3的一個實例係光阻堤結構(像 道)之^電褒處理。通常,該等像素 有活性層必須皆經印刷。 ^ 所有該等圍包方法昏且士^ 望一或更多層之連續塗佈^礙連續塗佈之缺點。人們期 設備成本。因此,掌内,要^乃因其獲得較高產率及較低 【發明内容】 ”成電子裝置之經改良方法。 ^月提供#在第—層上形成一經圍包第二層之方 120I97.doc 200841498 法’该方法包括: 形成具有第一表面能之第一層; 利用-反應性表面活性組合物處理該第一層以形成―昱 有低於該第一表面能之第二表面能的經處理第一層;、 使該經處理第一層曝露於輻射;及 曰 形成第二層。 本發明提供一種製造—有機電子裝 子裳置包括定位於_電極上之帛h方法,該有機電 電極上之弟一有機活性層及第二有檣 活性層,該方法包括: ,機 在該電極上形成具有第一表 剎田„ ^ . 此之弟一有機活性層,· 利用-反應性表面活性組合物處理該第 形成一具有低於該第一表面能之 '曰以 有機活性層; —表面此的經處理第— 使該經處理第一有機活性層曝露於輕 形成該第二有機活性層。 , 本發明亦提供一種有機電子裝置, 定位於電極上之第一有機活性層及第:有機電子裝置包括 一步包括在該第一有機活性層與該第Γ有機活性層’且進 應性表面活性組合物。 一有機活性層間之反 以上概述及以下詳細說明僅出於 限制本發明,本發明係由隨附請 π及說明之目的而非 【實施方式】 月項界定。 本發明提供一種在第一層上形一 法,該方法包括·· 麵圍包第二層之方 120197.doc 200841498 开&gt; 成具有弟一表面能之第一層; 利用一反應性表面活性組合物處理該第一層卩形成—具 有低於《亥帛纟面能之第二表面能的經處理第—層; 使該經處理第一層曝露於輻射;並 將該第二層施加於該經處理及經曝露第一層上。AlanJ.Heeger, AppLPhys.Letters58, i982 (i99(7). However, the manufacture of a full-color display requires some modifications to the program used in the early-color display. For example, to make the display have a full-color image Each display pixel is divided into three sub-pixels, and each of the sub-pixels emits three main display colors of red, green, and blue reeds in the middle of the ^ χ 邑 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Forced to prevent liquid coloring materials (ie, 'ink' expansion and color mixing. 120l97.doc 200841498 Several documents providing ink wraps have been described in the literature. These are based on the surrounding structure, surface tension discontinuity and both. The combination of wrap structures for extended geometric obstructions: pixel wells, banks, etc. In order for these structures to be effective, they must be large, comparable to the wet thickness of the deposited material. When luminescent inks are printed in such structures At this time, since it is thirsty on the surface of the structure, the thickness of the structure is reduced near the structure. Therefore, the structures must be removed from the emission "pixel". Domain so that unevenness is not seen in the job. Due to the limited space on the display (especially the high-resolution display), this reduction = the effective emission area of the material. When depositing the charge and the continuous layer of the transport layer, The outer envelope structure usually has a negative impact on quality. Therefore, all layers must be printed. = Outside, when there is a low surface tension material (4) or a gas deposition area, the surface tension discontinuity is obtained. The low surface tension material usually has to be applied before printing or coating the first organic active layer in the :: zone. Generally, when the (four) light emitting layer is connected, the use of the material treatment affects the quality, so all layers must be printed. An ink enveloping technique ^ ^ ^ An example of 辛井, , 3 is the electric barrier treatment of the light barrier structure (image path). Usually, the active layers of the pixels must be printed. ^ All such packages The method is faint and gentleman. It is expected that the continuous coating of one or more layers will hinder the shortcoming of continuous coating. The cost of equipment is popular. Therefore, in the palm, it is required to obtain higher yield and lower [invention content]. Electronic device Improved method. ^月提供# Forming a second layer on the first layer 120I97.doc 200841498 Method 'The method comprises: forming a first layer having a first surface energy; utilizing a reactive surface active combination Treating the first layer to form a treated first layer having a second surface energy lower than the first surface energy; exposing the treated first layer to radiation; and forming a second layer. The invention provides a method for manufacturing an organic electronic device, comprising: a method of positioning a germanium on the electrode, an organic active layer and a second active layer on the organic electrode, the method comprising: the machine is on the electrode Forming a first active surface active layer with a first surface, </ RTI> </ RTI> </ RTI> using a reactive surface active composition to form the first active layer having a lower than the first surface energy; Treated by this - exposing the treated first organic active layer to light formation of the second organic active layer. The present invention also provides an organic electronic device, wherein the first organic active layer and the organic electronic device disposed on the electrode include a step including the first organic active layer and the second organic active layer and the surface activity is active combination. The above summary of the invention and the following detailed description are only for the purpose of limiting the invention, and the invention is defined by the accompanying π and the description, rather than the [the embodiment]. The present invention provides a method for forming a first layer on a first layer, the method comprising: a square layer of the second layer 120197.doc 200841498 opening &gt; forming a first layer having a surface energy; utilizing a reactive surface activity The composition treats the first layer of germanium to form - a treated first layer having a second surface energy lower than "the surface energy of the surface"; exposing the treated first layer to radiation; and applying the second layer to The treated and exposed first layer.

上文已闡述若干態樣及實施例且其僅出於例示而非限制 之目的。閱讀本說明書後,熟習該項技術者應理解,可存 在其他態樣及實施例而不背離本發明之範圍。 自以下詳細說明及請求項將明瞭任_個或多個實施例之 其他特徵及優點。該詳細說明首先著重於術語之定義及說 明、隨後反應性表面活性組合物、方&amp;、有機電子裝置且 表後實例。 丄· 術語之定義及說明 在詳細說明下述實施例之前,定義或說明一些術語。 當術語「活性」係指一層或材料時,其意欲指一展現電 子或電輻射性質之層或材料。在一電子裝置中,活性材料 用電子方法促進裝置之作業。活性材料之實例包括(但不 限於)傳導 '注人、傳輪或封阻-電荷之材料(其中該電荷 可為一電子或電洞)及發射輻射或當受到輻射時展現電子 電洞對之濃度變化之材料。非活性材料之實例包括(但不 限於)平面化材料、絕緣材料及環境障壁柯料。 當術語「圍包」係指一層時,其意欲指 • ?日忒層亚未擴展明 硝%出其所沈積區。該層可藉由表面能 ㈢甄表面能影響 一物理障壁結構之組合圍包。 120197.doc 200841498 術§吾「電極」意欲指—細 ..^ 、,二構 在電子組件内傳輪载流 子之膜或結構。舉例而言,一帝 电極可為_極、陰極、雷v 器電極、閘電極等。_雷 、 極了包括龟日日體、電容器、電阻 姦、感應器、二極體、電子 电卞、、且仵電源或其任何組合之一 部分。 術語「有機電子裂置」意欲指一包括一或多個有機半導 體層或材料之裝置。一有機 有機電子裝置包括(但不限於):Several aspects and embodiments have been set forth above and are for purposes of illustration and not limitation. It will be understood by those skilled in the art <Desc/Clms Page number number> Other features and advantages of one or more embodiments will be apparent from the following detailed description and claims. This detailed description first focuses on the definition and description of the terms, the subsequent reactive surface active composition, the square &amp;, the organic electronic device and the post-table examples.丄· Definitions and Explanations of Terms Before describing the following examples in detail, some terms are defined or explained. When the term "active" refers to a layer or material, it is intended to mean a layer or material that exhibits the properties of electrons or electrical radiation. In an electronic device, the active material electronically promotes the operation of the device. Examples of active materials include, but are not limited to, materials that conduct 'inject, pass or block-charge (where the charge can be an electron or a hole) and emit radiation or exhibit electron holes when exposed to radiation Material with varying concentrations. Examples of inactive materials include, but are not limited to, planarized materials, insulating materials, and environmental barrier materials. When the term "container" refers to a layer, it is intended to mean that the 忒 忒 layer has not expanded its nitrate area. This layer can affect the combination of a physical barrier structure by the surface energy (3) surface energy. 120197.doc 200841498 § _ my "electrode" is intended to mean - fine, .. , , two structures in the electronic components of the film or structure of the carrier. For example, an electrode can be a _ pole, a cathode, a lightning electrode, a gate electrode, or the like. _Ray, including turtles, capacitors, resistors, inductors, diodes, electronic cymbals, and 仵 power supplies or any combination of them. The term "organic electronic cracking" is intended to mean a device comprising one or more organic semiconductor layers or materials. An organic organic electronic device includes (but is not limited to):

將電能,化成輕射之裝置(例如,發光二極體、發光二極 體顯不盎、二極體雷射或照明面板)’⑺利用電子方法偵 測信號之裝置(例如’光電㈣器、光導電池、光敏電阻 器、光電開關、光電電晶體、光電管、紅外(剛測器或 生物感測益)’ (3)將輻射轉化成電能之裝置(例如,光電伏 打裝置或太陽電池),及(4)包含一或多個電子組件(其包括 一或多個有機半導體層)(例如,電晶體或二極體)之裝置, 或項(1)至(4)中裝置之任何組合。 田術^氟化」係指一有機化合物時,其意欲指該化合 物中一或多個氫原子已被氟代替。該術語涵蓋部分及全部 氟化材料。 ° 術語「輻射(radiating)/輻射(radiation)」係指以任何形 式增加能量,其包括任何形式之加熱、整個電磁波譜或次 原子粒子,無論該輻射係射線、波還是粒子形式。 術語「反應性表面活性組合物」意欲指一包含至少一種 輕射敏感材料之組合物,且當將該組合物施加於一層時, 降低彼層之表面能。將該反應性表面活性組合物曝露於輕 120197.doc •10- 200841498 射使得該組合物之至少一種物理性質發生改變。該術語縮 寫為「RSA」’且係指曝露於輻射之前及之後之組合物。 當術語「輻射敏感」係指材料時,其意欲指曝露於輻射 導致該材料之至少一種化學、物㊣或電性質發生改變。 術语「表面能」係產生一材料之單位表面積所需能量。 表面能之特性在於具有既定表面能之液體材料不能潤濕具 有更低表面能之表面。a device that converts electrical energy into a light-emitting device (for example, a light-emitting diode, a light-emitting diode, a diode laser, or a lighting panel)' (7) a device that detects signals using an electronic method (eg, an optoelectronic (four) device, Photoconductive batteries, photoresistors, photoelectric switches, photovoltaic transistors, photocells, infrared (rigid detectors or biosensing benefits)' (3) Devices that convert radiation into electrical energy (eg, photovoltaic devices or solar cells), And (4) a device comprising one or more electronic components (which include one or more organic semiconductor layers) (eg, a transistor or a diode), or any combination of devices in items (1) through (4). "Field fluorination" means an organic compound which is intended to mean that one or more hydrogen atoms in the compound have been replaced by fluorine. The term covers some and all fluorinated materials. ° The term "radiating" / radiation ( ""radiation"" refers to the addition of energy in any form, including any form of heating, the entire electromagnetic spectrum or subatomic particles, whether in the form of radiation, waves or particles. The term "reactive surface active composition" Reference is made to a composition comprising at least one light-sensitive material, and when the composition is applied to a layer, the surface energy of the layer is lowered. The reactive surface active composition is exposed to light 120197.doc •10- 200841498 The composition causes a change in at least one physical property of the composition. The term is abbreviated as "RSA" and refers to a composition that is exposed to radiation before and after. When the term "radiation-sensitive" refers to a material, it is intended to mean exposure to Radiation causes at least one chemical, positive or electrical property of the material to change. The term "surface energy" is the energy required to produce a unit surface area of a material. The surface energy is characterized by a liquid material having a given surface energy that cannot be wetted. The surface of the lower surface energy.

術語「層」與術語「薄膜」可互換使用且係指一覆蓋期 望區之塗層。該術語並不受限於尺寸。該區可與整個裝置 :般大或與一諸如實際視覺顯示器等具體功能區、或舆單 一子像2—般小。層及膜可藉由任何習知沈積技術形成, f包括氣體沈積、液體沈積(連續及不連續技術)、及熱轉 術浯「液體組合物」意欲指一材料溶於其中形成溶液之 攻體介質、—材料分散於其中形成分散液之液體介質 體::懸:於其中以形成懸浮液或乳液之液體介質。「液 之材:…指:在未添加溶劑或載流體之情況下為液體 _ ’、即,在南於其凝固溫度之溫度下的材料。 術&quot;。「液體圍包結構」意欲指一在工件内发 ^其中當-液體流過紅件時此—或多個結構單獨= 起約束或引導該液體在一區或區域内 〜、 包結構可包括陰極分離器或井結構。 —液體圍 體:::IT。欲指—液體材料,其包括純液體、液 -液、少刀放液、懸浮液及乳液。無論存在—種還 120197.doc 200841498 是多種溶劑皆可使用液體介質。 本文所用術6吾「在· ·上」並非一定意謂著—声 結構緊鄰或接觸另—岸、 θ構件或 Η厚接〇 曰構件或結構。該等可係額外、中 間層、構件或結構。 Η Γ〒 本文所用術語「包合、「 變形詞彙均意欲涵蓋非排二括、,有」或其任何其它 -非排他性包括之内容。舉例而言,一 “ 之製程、方法、物件或儀器並The term "layer" is used interchangeably with the term "film" and refers to a coating that covers the desired area. The term is not limited by size. The zone may be as large as the entire device: or as a specific functional area such as an actual visual display, or a single sub-image 2. The layers and films can be formed by any conventional deposition technique, including gas deposition, liquid deposition (continuous and discontinuous techniques), and heat transfer. "Liquid composition" is intended to mean a material in which the material is dissolved to form a solution. A medium, a liquid medium in which a material is dispersed to form a dispersion: a suspension: a liquid medium in which a suspension or emulsion is formed. "Liquid material: ... means: a liquid _ ', that is, a material at a temperature south of its solidification temperature without adding a solvent or a carrier fluid. "The liquid envelope structure" is intended to mean a This is done in the workpiece where the liquid flows through the red piece - or the plurality of structures alone = constrain or direct the liquid in a zone or region ~, the package structure may comprise a cathode separator or well structure. - Liquid enclosure:::IT. To be referred to as a liquid material, which includes pure liquid, liquid-liquid, less knife discharge, suspension and emulsion. Whether present or not, 120197.doc 200841498 is a liquid medium that can be used in a variety of solvents. The technique used in this paper does not necessarily mean that the acoustic structure is in close proximity to or in contact with another shore, a θ member, or a thick 〇 member or structure. These may be additional, intermediate layers, members or structures. Η Γ〒 The terms “inclusion,” “deformation vocabulary are intended to cover non-existence, and have any” or any other non-exclusive nature. For example, a "process, method, object or instrument

於此等要素,而是可包含其他未明確列出的或此製 二开广牛或儀器固有之要素。此外,除非明確說明相反之 : &gt; ’否貝a ’「或」係指包括性「或」且非指排他性 或」、。舉例而言,一條件A或B可藉由下述任一得以滿 足A為真(或存在)&amp;B為假(或不存在卜a為假(或不存在) 且B為真(或存在),以及入與]3均為真(或存在)。 同樣,使用「一」用於闡述本文所述之要素或組份。此 舉僅為方便之目的並給出本發明範圍之一般意義。除非該 詞浯明顯指其他情形,否則,其應理解為包括一或至少一 個且該單數形式亦包括複數形式。 對應於元素週期表中行之族數使用rNew Notation」約 &amp; ’ 如參紀 CRC Handbook of Chemistry and Physics,% 版(2000-2001) 〇 除非另有說明,否則本文所用所有技術及科學術語皆具 有與熟習本發明所屬技術者通常所瞭解的意義相同的意 義。儘管與本文所述方法及材料類似或等效之方法及材料 皆可用於實施或試驗本發明之實施例,但下文描述適宜之 120197.doc -12- 200841498 方法及材料。除非引用一牯 '^特疋#又洛,否則本文所提及之所 有出版物、專利申培安奎丨 甲”專利、及其他參考文獻之全部内 容皆以引用方式倂入本文中。 T 1向右出現衝突,則以本說明 書(包括疋義)為准。此外,亨蓉 Γ鑌等材枓、方法及實例僅出於 說明之目的而非意欲限制本發明。 對於本文未述及之範圍,已習知諸多關於具體材料、處 理方法及電路之細節且可在關於有機發光二極體顯示器、These elements may include other elements that are not explicitly listed or that are inherent in the system. In addition, unless expressly stated to the contrary: &gt; 'No' a 'or' means an inclusive "or" and not an exclusive or ",". For example, a condition A or B can be satisfied by any of the following: A is true (or exists) & B is false (or no a is false (or non-existent) and B is true (or exists) And, the words "and" are used to describe the elements or components described herein. For the sake of convenience, the general meaning of the scope of the invention is given. Unless the term clearly indicates otherwise, it should be understood to include one or at least one and the singular form also includes the plural. The number corresponding to the number of rows in the periodic table is rNew Notation" about &amp; ' Handbook of Chemistry and Physics, % Edition (2000-2001) Unless otherwise stated, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art. Methods and materials similar or equivalent to methods and materials may be used in the practice or testing of the embodiments of the invention, but the methods and materials described in the following are described in the following. #又洛, otherwise all the publications mentioned in this article, patents, patents, and patents, and other references are incorporated herein by reference. T 1 conflicts to the right, this manual ( In addition, Henry's materials, methods, and examples are for illustrative purposes only and are not intended to limit the invention. For the scope not described herein, many specific materials and treatments are known. Details of the method and circuit and can be related to an organic light emitting diode display,

Μ測ϋ '光f伏打及半導體構件技術之教 源中找到。 + 2·反應性表面活性組合物 反應座表面活性組合物(「RSA」)係輕射敏感組合物。 當曝露於輻射時,RSA之至少—種物理性質及/或化學性質 改變以便經曝露或未曝露區可物理上加以區分。利用驗 處理可降低所處理材料之表面能。 “⑪例中,忒RS A係一可輕射硬化組合物。在此情 況下’當曝露於輻射時,RSA可變得更易溶於或分散於一 液體’I貝+,變得較不黏、不軟、不易流動、不易移除或 不易吸收。亦可影響其他物理性質。 在:貫施例中,該RSA係可輻射軟化組合物。在此情況 下二:曝露於輻射時,RSA可變得不易溶於或分散於一液 體’I貝中’變得更黏、更軟、更易流動、更易移除或更易 吸收。亦可影響其他物理性質。 幸田射可為引起RSA物理改變之任何類型輻射。在一實施 例中輻射係選自紅外輻射、可見輻射、紫外輻射、及其 120197.doc -13 - 200841498 組合。 八RSA之曝露於輻射之區與未曝露於輻射之區間之物理區 为(在下文中稱為「顯 r —, ^ ^如J ) 了猎由任何習知技術實施。該 術已廣泛用於光阻技術令。顯影技術之實例包括(但 :限於)用一液體介質處理、用吸收劑材料處理、用黏性 材料處理及諸如此類。 在“e例中’ RSA貫質上由—或多種輻射敏感材料構 成。在-實施例中,RSA實質上由—種當曝露於輕射時變 硬、或變得不易溶解、溶脹或分散於液體介質中、或變得 較不黏或不易吸收之材料構成。在一實施例中,該說實 質上由具有輻射可聚合基團之材料構成。該等基團之實例 包括(但不限於)烯烴、丙烯㈣、f基丙稀酸自旨及乙稀基 鍵。在-實施例中,該RSA材料具有兩個或以上可引起交 聯之可聚合基團。在一實施例中,RSA實質上由一當曝露 於輻射時變軟、或變得更易溶解、溶脹或分散於液體介質 中、或變得更黏或更易吸收之材料構成。在—實施例中, 該RSA實質上由至少一種聚合物構成,該聚合物當曝露於 波長介於200-300奈米範圍内之深uv輻射時經受主鏈降 解。經受該降解之聚合物的實例包括(但不限於)聚丙㈣ 醋、聚甲基丙稀酸醋、聚酮、聚石風、其共聚物及其混合 物。 在-實施例中,該RSA實質上由至少—種反應性材料與 至少一種輻射敏感材料構成。當該輻射敏感材料曝露於浐 射時產生-引發該反應性材料反應之活性物質。輻射敏感田 120197.doc -14- 200841498 材料之實例包括(但不限於)彼等產生自由基、酸或其組合 者。在一實施例中,該反應性材料可聚合或可交聯。該材 料之聚合或交聯反應係藉由該等活性物質引發或催化。該 輻射敏感材料以該RSA之總重量計通常以自〇.⑽1%至 10.0%之量存在。 在一貫施例中,該RS A實質上由一種當曝露於輻射時變 硬、或變得不易溶於解、溶脹或分散於液體介質中、或變 %較不黏或不易吸收之材料構成。在一實施例中,該反應 性材料係乙烯系不飽和化合物且該輻射敏感材料產生自由 基。乙烯系不飽和化合物包括(但不限於)丙烯酸酯、曱基 丙烯酸酯、乙烯基化合物、及其組合。可使用產生自由基 之任何習知種類輻射敏感材料。產生自由基之輻射敏感材 料之實例包括(但不限於)苯醌、二苯甲酮、安息香醚、芳 基酮、過氧化物、二咪唑、苄基二甲基縮酮、羥基烷基苯 基苯乙酮、二烷氧基苯乙酮、三甲基苯甲醯基氧化膦衍生 物、胺基酮、苯甲醯基環己醇、甲硫基苯基嗎啉基酮、嗎 啉基苯基胺基酮、α鹵代苯乙酮 '氧基磺醯基酮、磺醯基 酮、氧基磺醯基_、磺醯基酮、苯甲醯基肟酯、噻噸明、 樟腦醌、香豆素酮、及Michler酮。或者,該輻射敏感材料 可為化合物之混合物,其中之一當因藉由輻射活化之敏化 劑導致如此時提供自由基。在一實施例中,該輻射敏感材 料對可見或紫外輻射敏感。 在一實施例中,該RSA係具有一或多個可交聯基團之化 合物。可交聯基團可具有含雙鍵、三鍵、能夠原位形成雙 120197.doc -15- 200841498 鍵之前體或雜環可加成聚合基團之部分。可交聯基團之一 些實例包括苯并環丁烷、疊氮化物、氧雜環丙烷、二(烴 基)胺基、氰酸酯、羥基、縮水甘油醚、丙烯酸c卜1〇烷^ 醋、甲基丙烯酸C1-10烷基酯、烯基、烯氧基、快基、^ 來醯亞胺、nadimide、三(C1-4)烷基甲矽烷氧基、三((:ι·4) 烷基甲矽烷基、及其鹵代衍生物。在一實施例中,該可交 聯基團係選自由乙烯基苄基、對_乙烯基苯基、全氟乙烯 基、全氟乙烯基氧基、苯并-3,心環丁-1-基、及對_(苯并· 3,4-環丁-1-基)苯基組成之群。Μ ϋ ϋ 'Light f volts and semiconductor component technology teaching source found. + 2. Reactive Surface Active Composition The Resin Surface Active Composition ("RSA") is a light sensitive composition. When exposed to radiation, at least the physical properties and/or chemical properties of the RSA are altered so that the exposed or unexposed regions can be physically distinguished. The surface energy of the treated material can be reduced by using the treatment. "In 11 cases, 忒RS A is a light-hardening composition. In this case, when exposed to radiation, RSA can become more soluble or dispersed in a liquid 'I shell +, becoming less sticky. It is not soft, not easy to flow, difficult to remove or difficult to absorb. It can also affect other physical properties. In the following examples, the RSA system can radiate softening composition. In this case, 2: when exposed to radiation, RSA can Becomes less soluble or dispersible in a liquid 'I shell' becomes more viscous, softer, more fluid, easier to remove or more easily absorbed. It can also affect other physical properties. Koda Shot can be any physical change that causes RSA Type of radiation. In one embodiment the radiation is selected from the group consisting of infrared radiation, visible radiation, ultraviolet radiation, and combinations thereof, 120197.doc -13 - 200841498. Eight areas of the RSA exposed to radiation and physical areas not exposed to radiation For (hereinafter referred to as "display r-, ^^如J") hunting is performed by any conventional technique. This technique has been widely used in photoresist technology orders. Examples of development techniques include (but are limited to) using a liquid medium. Treatment, treatment with absorbent material, In the viscous material handling and the like "e embodiment 'consistent quality of the RSA - or more radiation-sensitive material constituted. In an embodiment, the RSA consists essentially of a material that becomes hard when exposed to light radiation, or that becomes less soluble, swells or disperses in a liquid medium, or becomes less viscous or less absorbing. In one embodiment, the material is substantially comprised of a material having a radiation polymerizable group. Examples of such groups include, but are not limited to, olefins, propylene (tetra), f-propyl acrylate, and ethylenic bonds. In an embodiment, the RSA material has two or more polymerizable groups that can cause crosslinking. In one embodiment, the RSA consists essentially of a material that softens when exposed to radiation, or that becomes more soluble, swells or disperses in a liquid medium, or becomes more viscous or more absorbing. In an embodiment, the RSA consists essentially of at least one polymer that undergoes degradation of the backbone when exposed to deep uv radiation having a wavelength in the range of 200-300 nm. Examples of polymers that undergo such degradation include, but are not limited to, poly (iv) vinegar, polymethyl acrylate vinegar, polyketones, polychlorite, copolymers thereof, and mixtures thereof. In an embodiment, the RSA consists essentially of at least one reactive material and at least one radiation-sensitive material. When the radiation-sensitive material is exposed to radiation, it produces an active substance that initiates the reaction of the reactive material. Radiation-sensitive fields 120197.doc -14- 200841498 Examples of materials include, but are not limited to, those that generate free radicals, acids, or combinations thereof. In an embodiment, the reactive material can be polymerized or crosslinkable. The polymerization or crosslinking reaction of the material is initiated or catalyzed by the active materials. The radiation sensitive material is typically present in an amount from 1% to 10.0% by weight of the total weight of the RSA. In a consistent embodiment, the RS A consists essentially of a material that hardens when exposed to radiation, or that becomes less soluble, swells or disperses in a liquid medium, or becomes less viscous or less absorbing. In one embodiment, the reactive material is an ethylenically unsaturated compound and the radiation-sensitive material produces a free radical. Ethylene-based unsaturated compounds include, but are not limited to, acrylates, decyl acrylates, vinyl compounds, and combinations thereof. Any of the well-known types of radiation-sensitive materials that generate free radicals can be used. Examples of radiation-sensitive materials that generate free radicals include, but are not limited to, benzoquinone, benzophenone, benzoin ether, aryl ketone, peroxide, diimidazole, benzyl dimethyl ketal, hydroxyalkyl phenyl Acetophenone, dialkoxyacetophenone, trimethylbenzimidylphosphine oxide derivative, aminoketone, benzhydrylcyclohexanol, methylthiophenylmorpholinyl ketone, morpholinylbenzene Amino ketone, α-haloacetophenone oxysulfonyl ketone, sulfonyl ketone, oxysulfonyl ketone, sulfonyl ketone, benzhydryl decyl ester, thioxanthene, camphorquinone, Coumarinone, and Michler ketone. Alternatively, the radiation-sensitive material may be a mixture of compounds, one of which provides free radicals when caused by a sensitizer activated by radiation. In one embodiment, the radiation-sensitive material is sensitive to visible or ultraviolet radiation. In one embodiment, the RSA is a compound having one or more crosslinkable groups. The crosslinkable group may have a moiety containing a double bond, a triple bond, and capable of forming a double 120197.doc -15-200841498 bond precursor or a heterocyclic addition polymerizable group in situ. Some examples of crosslinkable groups include benzocyclobutane, azide, oxirane, bis(hydrocarbyl)amine, cyanate, hydroxy, glycidyl ether, acrylic acid, vinegar, C1-10 alkyl methacrylate, alkenyl, alkenyloxy, fast radical, imine, nadimide, tri(C1-4)alkylcarboxyoxy, tris((:1,4) alkane a mercaptoalkyl group, and a halogenated derivative thereof. In one embodiment, the crosslinkable group is selected from the group consisting of vinylbenzyl, p-vinylphenyl, perfluorovinyl, perfluorovinyloxy a group consisting of benzo-3, a heart-butan-1-yl group, and a p-(benzo-3,4-cyclobutan-1-yl)phenyl group.

在一實施例中,該反應性材料可經受由酸引發之聚合, 且該輻射敏感材料產生酸。該等反應性材料之實例包括 (但不限於)環氧樹脂。產生酸之輻射敏感材料之實例包括 (但不限於)硫鑌及礎鏽鹽,知如六氟磷^酸二苯基蛾鑌。 在一實施例中,該RSA實質上由一當曝露於輻射時變 軟、或變得更易溶解、溶脹或分散於液體介質中、或變得 更黏或更易吸收之材料構成。在一實施例中,該反應性材 料係酚醛樹脂且該輻射敏感材料係重氮萘醌。 同樣可使用該項技術中習知之其他輻射敏感系統。 在一實施例中,該RS A包含氟化材料。在一實施例中, 該RS A包含一具有一或多個氟烧基基團之不飽和材料。在 一實施例中,該等氟烷基基團具有2-20個碳原子。在一實 施例中,該RSA係氟化丙烯酸酯、氟化酯或氟化烯烴單 體。可用作RSA材料之市售材料的實例包括(但不限 於)Zonyl㊣ 8857A(—種自 Ε· I· du Pont de Nemours and 120197.doc -16 - 200841498In an embodiment, the reactive material can undergo acid initiated polymerization and the radiation sensitive material produces an acid. Examples of such reactive materials include, but are not limited to, epoxy resins. Examples of radiation-sensitive materials that generate acid include, but are not limited to, thioindigo and rust salts, such as hexafluorophosphonate diphenyl moth. In one embodiment, the RSA consists essentially of a material that softens when exposed to radiation, or that becomes more soluble, swells or disperses in a liquid medium, or becomes more viscous or more absorbing. In one embodiment, the reactive material is a phenolic resin and the radiation-sensitive material is diazonaphthoquinone. Other radiation sensitive systems known in the art can be used as well. In an embodiment, the RS A comprises a fluorinated material. In one embodiment, the RS A comprises an unsaturated material having one or more fluoroalkyl groups. In one embodiment, the fluoroalkyl groups have from 2 to 20 carbon atoms. In one embodiment, the RSA is a fluorinated acrylate, fluorinated ester or fluorinated olefin monomer. Examples of commercially available materials that can be used as RSA materials include, but are not limited to, Zonyl Plus 8857A (a species from Ε· I· du Pont de Nemours and 120197.doc -16 - 200841498)

Company (Wilmington,DE)購得之氟化不飽和酯單體)及自 Sigma-Aldrich有限公司(St· Louis,MO)購得之丙稀酸 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12512512-二十一敦 十二烷基酯(H2〇CHC02CH2CH2(CF2)9CF3)。 在一貫施例中,該RSA係氟化大單體。本文所用術語 「大單體」係指具有一或多個封端或懸掛於該鏈之反應性 基團之寡聚物材料。在一些實施例中,該大單體具有大於Company (Wilmington, DE) purchased fluorinated unsaturated ester monomer) and acrylic acid purchased from Sigma-Aldrich Co., Ltd. (St. Louis, MO) 3,3,4,4,5,5,6 6,6,7,8,8,9,9,10,10,11,11,12512512- twenty-one Dundecyl ester (H2〇CHC02CH2CH2(CF2)9CF3). In a consistent embodiment, the RSA is a fluorinated macromonomer. The term "macromonomer" as used herein, refers to an oligomeric material having one or more reactive groups that are capped or pendant from the chain. In some embodiments, the macromonomer has a greater than

1000之分子量;在一些 例中,大於50G0。在-些實施例中,該大單體之主鍵包括 喊鏈段及及全氟鍵鏈段。在—些實施例中,該大單體之主 鏈包括烧基鏈段及全氟絲鏈段。在—些實施例中,該大 單體之主鏈包括部分說化之烷基或部分氟化之醚鏈段:在 一些實施例中,該大單體具有—或兩個封端可聚合或可交 聯基團。 合物材料,宜中且有衣㈣鍵之寡聚物或聚 八中〃有忒專侧鏈之材料形成表面能愈不且古 該等側鏈之材料不同之膜。在一The molecular weight of 1000; in some cases, greater than 50 G0. In some embodiments, the primary bond of the macromonomer comprises a shunt segment and a perfluoro bond segment. In some embodiments, the backbone of the macromonomer comprises a burn-in segment and a perfluoro-filament segment. In some embodiments, the backbone of the macromonomer comprises a partially alkylated or partially fluorinated ether segment: in some embodiments, the macromonomer has - or both capping polymerizable or Crosslinkable groups. The material of the composition, which is preferably a material having a coating of the (four) bond or a material having a side chain of the polystyrene, forms a film having a different surface energy and a different material of the side chain. In a

狀牡男知例中,該RS 氟化主鏈及部分或全部氟化之側鏈。〃In the case of the genus, the RS fluorinated backbone and some or all of the fluorinated side chains. 〃

將形成表相鏈之RSA 干助个/、百該#側鏈之RSA所费 之膜。因此,可脾裏成之膜為低 D 了將忒rsa施加於第一声 輻射以使該等侧鏈解離一圖案曝露於 〒硬胛雕、亚顯影以去 在曝露於輻射其中已去 Μ 1鏈。此獲得The film of the RSA of the surface chain and the RSA of the side chain will be formed. Therefore, the film formed in the spleen is low D, and 忒rsa is applied to the first sound radiation to expose the side chains to a pattern exposed to the hard enamel, sub-developed to be exposed to the radiation. chain. This is obtained

方你β寺側鏈之區中 A 能、且在1中俾囪兮發 /、有較尚表面 U保邊该丰侧鏈之未曝露 之圖案。在一些實 I、有較低表面能 中㈣侧鏈係以熱方式逃逸且係 120I97.doc -17- 200841498 猎由加熱(如同紅 拦、…々 偽产,, 田射一樣)裂解。在此情況下,顯黌可 契在紅外輻射中曝露 ,〜了 空或用溶劑處理來,/或者’顯影可藉由施加真 由曝露u °在—些貫施财,該等側鏈係藉 於υν輻射裂解。如同上述紅外系統—樣,顯影可 實施。 ·、、或猎由施加真空或用溶劑處理來 2以例中’該RSA包含具有反應性基團及第二類官 :二材料。可存在第二類官能團以改良該RSA之物理處 塑=或光物理性質。改良處理性質之基團的實例包括增 光物理性質之基團的實例 團 寻輸基團’例如味唾、三芳基胺基、或喔二唾基 在-實施例中,當該RSA曝露於輻射時與下伏區反應。 反應之準確機制應取決於所用材料。曝露於輻射後,藉 由適宜顯影處理去除未曝露區中之RSAe在_些實施^ 中’僅去除未曝露區中之RSA。在一些實施例中,同樣部 分二去除曝露區中之RSA,此在該等區中留下—較薄層。 在一些實施例中,料曝露區中保留之RSA厚度小於50 埃在些實施例中,該等曝露區中保留之Rs A厚度實質 上係單層》 3· 方法 在本文所提供之方法中,形成第一層,利用一反應性表 面活^組合物(rRSA」)處理該第一,,將該經處理第一 層曝路於輻射,並在該經處理及經曝露第一層上形成第二 120197.doc •18· 200841498 層。 在一實施例中’該第—層係基板。該基板可為無機物或 有機物。基板之實例包括(但*限於)麵、㈣及聚合物 膜(例如聚酯及聚醯亞胺膜)。 ‘在-實施例中,該第—層係電極。該電極可未經圖案化 《經圖案化。在一實施例中’該電極係以平行線圖案化。 該電極可位於基板上。 • 在一實施例中’該第一層係沈積於基板上。該第-層可 經圖案化或未經圖案化。在一實施例中,該第一層係電子 裝置中之有機活性層。 該第-層可藉由任何沈積技術形成,其包括氣體沈積技 術、液體沈積技術及熱轉移技術。在一實施例中,該第一 層係藉由液體沈積技術沈積,隨後乾燥。在此情況下,將 一第一材料溶解或分散於液體介質中。該液體沈積方法可 為連續或不連續。連續液體沈積技術包括(但不限於)旋 # 塗、滚筒塗佈、幕塗、浸塗、狹缝模具式塗佈、噴塗及連 續喷嘴塗佈。不連續液體沈積技術包括(但不限於)噴墨印 刷、凹板印刷、柔性版印刷及網板印刷。在一實施例中, 該第一層係藉由連續液體沈積技術沈積。該乾燥步驟可在 至溫或面/JHL下貫施’只要不損壞該第一材料及任何下伏材 料即可。 該第一層係用RS A處理。該處理可與該第一層之形成同 時或在此之後實施。 在一實施例中,該RSA處理係與第一有機活性層之形成 120197.doc -19- 200841498 同時或在此之後實施。在一實施例中,將該RSA添加於用 於形成該第一層之液體組合物中。當乾燥所沈積組合物以 形成膜時,該RSA遷移至該第一層之空氣介面(即,頂表 面)以降低該系統之表面能。 在一實施例中,該RSA處理係在形成該第一層之後實 施。在一實施例中,該RSA係作為單獨層施加覆蓋並直接 接觸該第一層。 在貝施例中,RS A可在未向其中添加溶劑之情況下施 加。在一實施例中,RSA係藉由氣體沈積施加。在一實施 例中,RSA於室溫下係液體且藉由液體沈積施加於第一層 上。該液體RS A可成膜或其可被吸收或吸附於該第—層之 表面上。在一實施例中,將該液體RSA冷卻至低於其熔點 之溫度以在該第一層上形成第二層。在一實施例中,RsA 於室溫下並非液體且將其加熱至高於其熔點至溫度、沈積 於第一層上、並冷卻至室溫以在該第一層上形成第二層。 對於該液體沈積,可使用任何上述方法。 在一貝施例中,該RS A係自第二液體組合物沈積。該液 體沈積方法可為連續或不連續,如上文所述。在一實施例 中,該RSA液體組合物係使用連續液體沈積方法沈積。用 於沈積该RSA之液體介質的選擇應取決於該a材料自身 之確切性質。在一實施例中,該RSA係氟化材料且該液體 介質係氟化液體。氟化液體之實例包括(但不限於)全氟辛 烧、三氟甲苯、及六氟二甲苯。 在一些貫施例中,該RSA處理包括在該第一層上形成一 120197.doc -20- 200841498 犧牲層之第一步、及將RSA層施加於該犧牲層上之第二 步。該犧牲層係一較RSA層更易藉由任何所選顯影處理: 除之層。因此’曝露於輻射後,如下文所述在顯影步驟中 去除曝露或未曝露區中之RSA層及犧牲層。該犧牲層意欲 促使完全去除所選區中之RSA層並保護下伏第一層免^來 自η亥RSA層中反應性物質之任何不利影響。 該⑽處理後,將該經處理第—層曝露於輻射。所神 射類型應端視該RSA之敏感性而定,如上文所述。該曝露田 可為毯覆式整體曝露,或該曝露可按照圖案曝露。如本文 術語「按«案」表示僅使—材料或層之所選部分 曝路。按照圖案曝露可使用任何習知成像技術達成。在一 κ施例中’該圖案係藉由藉助—遮罩曝露來達成。在 施例中,該圖案係蕤ά 胃 糸猎由利用雷射曝露僅選擇部分來達成。 曝露時間可介於數秒至數八 双矽至數刀鐘之間,此取決於所用RSA之In the area of the side chain of your β temple, A can, and in 1, the 俾 兮 / 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 In some real I, there is a lower surface energy. (4) The side chain system escapes thermally and the system is lysed by heating (like red trap, ... 伪 pseudo-production, field shot). In this case, it is obvious that it can be exposed to infrared radiation, ~ empty or treated with a solvent, and / or 'development can be applied by the application of true u ° - some of the side chains are borrowed from Υν radiation cracking. As with the infrared system described above, development can be carried out. •, or hunting by vacuum or solvent treatment 2 In the example of 'the RSA contains a reactive group and a second type of: two materials. A second type of functional group may be present to improve the physical plasticity or photophysical properties of the RSA. Examples of groups that modify the nature of the treatment include an example group of groups that enhance the physical properties of the group, such as a saliva, a triarylamine group, or a geminyl group, in an embodiment, when the RSA is exposed to radiation. Reacts with the underlying zone. The exact mechanism of the reaction should depend on the materials used. After exposure to radiation, the RSAe in the unexposed areas is removed by suitable development treatment to remove only the RSA in the unexposed areas. In some embodiments, the same portion of the two removes the RSA in the exposed zone, which leaves a thinner layer in the zones. In some embodiments, the RSA thickness retained in the exposed area of the material is less than 50 angstroms. In some embodiments, the thickness of the Rs A retained in the exposed areas is substantially a single layer. 3 Methods In the methods provided herein, Forming a first layer, treating the first with a reactive surface composition (rRSA), exposing the treated first layer to radiation, and forming a first layer on the treated and exposed first layer Two 120197.doc •18· 200841498 layers. In an embodiment, the first layer substrate. The substrate can be inorganic or organic. Examples of substrates include, but are limited to, faces, (iv), and polymeric films (e.g., polyester and polyimide films). In the embodiment, the first layer is an electrode. The electrode can be unpatterned "patterned. In one embodiment, the electrodes are patterned in parallel lines. The electrode can be located on the substrate. • In an embodiment the first layer is deposited on the substrate. The first layer can be patterned or unpatterned. In one embodiment, the first layer is an organic active layer in an electronic device. The first layer can be formed by any deposition technique including gas deposition techniques, liquid deposition techniques, and thermal transfer techniques. In one embodiment, the first layer is deposited by a liquid deposition technique followed by drying. In this case, a first material is dissolved or dispersed in the liquid medium. The liquid deposition method can be continuous or discontinuous. Continuous liquid deposition techniques include, but are not limited to, spin coating, roller coating, curtain coating, dip coating, slot die coating, spray coating, and continuous nozzle coating. Discontinuous liquid deposition techniques include, but are not limited to, ink jet printing, gravure printing, flexographic printing, and screen printing. In one embodiment, the first layer is deposited by a continuous liquid deposition technique. The drying step can be carried out under a temperature or face/JHL as long as the first material and any underlying material are not damaged. This first layer is treated with RS A. This treatment can be carried out simultaneously with or after the formation of the first layer. In one embodiment, the RSA treatment is performed simultaneously with or after the formation of the first organic active layer 120197.doc -19- 200841498. In one embodiment, the RSA is added to the liquid composition used to form the first layer. When the deposited composition is dried to form a film, the RSA migrates to the air interface (i.e., the top surface) of the first layer to reduce the surface energy of the system. In one embodiment, the RSA processing is performed after forming the first layer. In one embodiment, the RSA applies a cover as a separate layer and directly contacts the first layer. In the case of Bayes, RS A can be applied without adding a solvent thereto. In one embodiment, the RSA is applied by gas deposition. In one embodiment, the RSA is liquid at room temperature and applied to the first layer by liquid deposition. The liquid RS A may be formed into a film or it may be absorbed or adsorbed on the surface of the first layer. In one embodiment, the liquid RSA is cooled to a temperature below its melting point to form a second layer on the first layer. In one embodiment, RsA is not liquid at room temperature and is heated above its melting point to temperature, deposited on the first layer, and cooled to room temperature to form a second layer on the first layer. For the liquid deposition, any of the above methods can be used. In one embodiment, the RS A is deposited from a second liquid composition. The liquid deposition method can be continuous or discontinuous as described above. In one embodiment, the RSA liquid composition is deposited using a continuous liquid deposition process. The choice of liquid medium used to deposit the RSA should depend on the exact nature of the material a itself. In one embodiment, the RSA is a fluorinated material and the liquid medium is a fluorinated liquid. Examples of fluorinated liquids include, but are not limited to, perfluorooctane, trifluorotoluene, and hexafluoroxylene. In some embodiments, the RSA process includes a first step of forming a 120197.doc -20-200841498 sacrificial layer on the first layer and a second step of applying an RSA layer to the sacrificial layer. The sacrificial layer is easier to process by any selected development than the RSA layer: the layer is removed. Thus, after exposure to radiation, the RSA layer and the sacrificial layer in the exposed or unexposed regions are removed in the development step as described below. The sacrificial layer is intended to promote complete removal of the RSA layer in the selected region and to protect the underlying first layer from any adverse effects of the reactive species in the RSA layer. After the (10) treatment, the treated first layer is exposed to radiation. The type of reflection should be based on the sensitivity of the RSA, as described above. The exposed field may be blanket-integrated, or the exposure may be exposed as a pattern. As used herein, the term "by" indicates that only the selected portion of the material or layer is exposed. Exposure to the pattern can be achieved using any conventional imaging technique. In a κ embodiment, the pattern is achieved by exposure by means of a mask. In the example, the pattern is achieved by using only portions of the laser exposure. Exposure time can range from a few seconds to several octaves to several knives, depending on the RSA used

具體化學性質。當僙用帝M 更用田射時,端視該雷射之功率,各單Specific chemical properties. When using Emperor M to use the field, look at the power of the laser, each single

獨區可使用更短曝露時間。# A A — +路步驟可在空軋或情性氣 乱中::,此取決於該等材料之敏感性。 、,在K %例中,該輻射係選自由紫外輻射(1G-390奈 米)可見幸田射(390-770奈米)、紅外輕射 及其組合組成之群,苴句士 不木) ,、匕括同日寸及相繼處理。在一實施例 中,该輪射係熱輻射。在_告 在只她例中,曝露於輻射係藉由 熱以°遠加熱步驟之溫度及持續時間係使得該RSA之 至少=物理性質改變,而不損害發光區之任何下伏層。 在 貝施例中,該加、、® # / 力熱/皿度低於25〇。〇。在一實施例中, 120197.doc -21 - 200841498 該加熱溫度低於150°C。 在一實施例中,該輻射係紫外或可見輻射。在一實施例 中,該輻射係按照圖案施加,此獲得RSA之曝露區域及 RSA之未曝露區域。 - 在一實施例中,按照圖案曝露於輻射後,處理該第一層 以去除該RS A之曝露或未曝露區域。在光阻技術中已習知 按照圖案曝露於輻射及去除曝露或未曝露區域之處理。 | 在一實施例中,將該RSA曝露於輻射使得該RSA在溶劑 中之溶解性或分散性改變。當該曝露係按照圖案實施時, 此可隨後進行濕顯影處理。該處理通常涉及用溶解、分散 或移除一類區之溶劑洗滌。在一實施例中,按照圖案曝露 於輻射使得該RSA之曝露區不溶,且用溶劑處理使得該 RSA之未曝露區去除。 在一實施例中,將該RSA曝露於可見或UV輻射引起降低 曝露區中該RSA之揮發性的反應。當該曝露係按照圖案實 φ 施時,此可隨後實施熱顯影處理。該處理涉及加熱至一高 於未曝露材料之揮發或昇華溫度且低於該材料熱反應性之 溫度的溫度。舉例而言,對於一可聚合單體,該材料應在 • 高於昇華溫度且低於熱聚合溫度之溫度下加熱。應瞭解, . 熱反應溫度接近或低於揮發溫度之RS A材料可能不能以此 方式顯影。 在一實施例中,將該RSA曝露於輻射使得該材料熔融、 軟化或流動之溫度發生改變。當該曝露係按照圖案實施 時,此可隨後實施乾顯影處理。乾顯影處理可包括使該元 120197.doc -22- 200841498 件之最外表面接觸-吸收表面以吸收或吸去較軟部分。此 :.、員&quot;可在间,皿下貫施,只要其不會進一步影響初始未曝 露區之性質即可。 义利用該RSA處理並曝露於輕射後,t亥第—層具有較處理 1為低之表面能。在其中曝露於輻射後去除一部分RSA之 情=下,該第-層被該RSA覆蓋之區將具有較未被該燃 覆盍之區為低之表面能。 一種測定相對表面能之途徑係比較用RSA處理之前及之 後給定液體在該第一有機活性層上之接觸角。如本文所用 術^接觸角」意欲指圖1中所示角度φ。對於一滴液體介 質而言,角度Φ係藉由該表面之平面與自該液滴之外邊緣 至該表面之線相交來界定。而且,角度〇係在施加該液滴 後其在該表面上達到平衡位置後量測,即「靜止接觸 角」。若干製造商製造了能夠量測接觸角之設備。 然後將第二層施加於經RSA處理之第一層上。該第二層 可藉由任何沈積技術施加。在一實施例中,該第二層係藉 由液體沈積技術施加。在此情況下,一液體組合物包含第 二材料,該材料溶解或分散於液體介質中、施加於經rsa 處理之弟層上、並乾燥以形成第二層。該液體組合物係 經選擇以便具有較經RSA處理第一層之表面能為大、但大 約與未經處理第一層之表面能相同或小於其之表面能。因 此’該液體組合物將潤濕該未處理第一層,但將被排除出 經RS A處理之區。該液體可在經RSA處理之區上擴展,但 其將去濕潤。 120197.doc -23 - 200841498 在一實施例中,該RSA經圖案化且該第二層係使用連續 液體沈積技術施加。在一實施例中,該第二層係使用不連 續液體沈積技術施加。 在一實施例中,該RSA未經圖案化且該第二層係使用不 連續液體沈積技術施加。 在一實施例中,第一層係施加於一液體圍包結構上。可 月b會期望使用一不足以完全圍包、但仍允許調節印刷層之 厚度均勻性之結構。在此情況下,可期望控制厚度調節結 構上之潤濕,此提供圍包及均勻性二者。因而期望能夠調 整發光油墨之接觸角。用於圍包之大多數表面處理㈠列 如’ CF4電漿)不能提供此控制水平。 在一貧施例中,該第一層係施加於所謂堤結構上。堤結 構通常自光阻劑、有機材料(例如,聚醯亞胺)、或無機材 料(氧化物、氮化物及諸如此類)形成。堤結構可用於圍包 、、液體开y式之第一層’防止顏色混合;及,或當該第一 層自其液體形式乾料用於改良其厚度均句性;及/或用 」呆漢下伏#件免於接觸該液體。該等下伏部件可包括導 電跡線、導電跡繞問夕虹、 , m㈣之㈣、賴電晶體、電極、及諸如 此類。通常期望在該蓉提4士 4疋、、、°構上形成具有不同表面能之區 戶達成兩個或以上目的(例如,防止顏色混合且亦改良 :度均句性)。一種途徑係提供具有若干層之堤結構,每 層具有不同表面能。一種 ^ ^ 種達成表面能此調整之更成本有 效途控係經由調整用於 ,..ώ 化RSA之輻射术控制表面能。固 幸§射之此調整可為能量 w里形式(功率*曝露時間)、或藉 120l97.doc -24- 200841498 藉助板擬不同表面能之光罩圖案使該rsa曝露(例如 助半色調密度遮罩曝露)。 曰 在本文所提供方法之—實施例中,該第_及第二 有機活性層。兮穿 .^ ^ kiL 0 曰白句 一二 5亥弟一有機活性層係形成於一第一電極上, 將該第-有機活性層用反應性表面活性組合物處理以降低 Μ之表面能’並在該經處理第_有機活性層上形成該第 二有機活性層。 在一實施例中,該第—有機活性層係藉由液體組合物之 液體沈積形成,該組合物包含該第_有機活性材料及液體 介質。、將該液體組合物沈積於電極上,並然後乾燥 以形成-層。在一實施例中,該第一有機活性層係藉由: 續液體沈積方法形成。該等方法可獲得較高產率及較低設 備成本。 在一實施例中,該RSA處理係在形成該第—有機活性層 之後實施。在-實施例中,該RSA係作為單獨層施加覆蓋 並錢接觸該第-有機活性層。在—實施例中,該rsa係 自士第二液體組合物沈積。該液體沈積方法可為連續或不連 繽的,如上文所述。在—實施例中,該rsa液體組合物係 使用連續液體沈積方法沈積。 該rsa層之厚度可取決於該材料之最終用♦。在一些實 施例中’該RSA層厚度至少1〇〇埃。在一些實施例中,: RSA層係介於100-3〇〇fH仓々戸弓· a iVl ^ 埃之間,在一些實施例中1〇〇〇·2〇〇〇 埃。 該RSA處理後,將該經處理第一有機活性層曝露於輕 120197.doc -25- 200841498 射。所用輕射類型應取決於該RSA之敏感性,如上文所 述。該曝露可為毯覆式整體曝露,或該曝露可按照圖案曝 露。 在一實施例中,將該RSA曝露於輻射使得該rsa在液體 介質中之溶解性或分散性改變。在—實施例中,該曝露係 按照圖案實施。此可隨後利用一液體介質處理rsa以去除 «亥RSA之曝路或未曝露部分。在—實施例巾,該rsa可輻 射硬化且該等未曝露部分係藉由該液體介質去除。 4· 有機電子裝置 將板據其在電子裝置中之應用進一步闡述該方法,但其 並不限於該應用。 圖2係只例性電子裝置,即有機發光二極體(〇LED)顯 不器’其包括至少兩個位於兩個電接觸層間之有機活性 層。電子裝置100包括一或多個層120及13()以有助於將電 洞自陽極層110注入光活性層140。通常,當存在兩個層 時,毗鄰陽極之層120稱為電洞注入層或緩衝層。毗鄰該 光活性層之層13〇稱為電洞傳輸層。一可選電子傳輸層15〇 係位於光活性層140與陰極層160之間。端視裝置1〇〇之應 用而定,光活性層140可為一藉由外施電壓激發之發光層 (例如在一發光一極體或發光電化學電池中)、一可響應輻 射能並在有或無外施偏壓的情況下產生一信號之材料層 (例如在光偵測器中)。該裝置並不因系統、驅動方法及利 用模式而受限。 對於多色裝置而言,光活性層140係由至少三種不同顏 120197.doc -26 - 200841498A shorter exposure time can be used in a single zone. # A A — The road steps can be in the air rolling or emotional chaos::, depending on the sensitivity of the materials. In the case of K %, the radiation is selected from the group consisting of ultraviolet radiation (1G-390 nm), Koda Shot (390-770 nm), infrared light shot, and a combination thereof, and the group is not woody. Including the same day and processing. In one embodiment, the train is thermally radiated. In the case of her only exposure to radiation, the temperature and duration of the heating step by heat are such that at least the physical properties of the RSA change without damaging any underlying layers of the luminescent region. In the case of Besch, the addition, ® # / heat / dish is less than 25 〇. Hey. In one embodiment, 120197.doc -21 - 200841498 the heating temperature is below 150 °C. In an embodiment, the radiation is ultraviolet or visible radiation. In one embodiment, the radiation is applied in a pattern which results in an exposed area of the RSA and an unexposed area of the RSA. - In one embodiment, after exposure to radiation in a pattern, the first layer is treated to remove exposed or unexposed regions of the RS A. It is known in the art of photoresist to be exposed to radiation in a pattern and to remove exposed or unexposed areas. In one embodiment, exposing the RSA to radiation changes the solubility or dispersibility of the RSA in a solvent. When the exposure is carried out in a pattern, this can be followed by a wet development process. This treatment typically involves washing with a solvent that dissolves, disperses or removes a type of zone. In one embodiment, exposure to radiation in a pattern such that the exposed area of the RSA is insoluble and treated with a solvent removes the unexposed areas of the RSA. In one embodiment, exposing the RSA to visible or UV radiation causes a reaction that reduces the volatility of the RSA in the exposed zone. When the exposure is applied as a pattern, this can be followed by a thermal development process. The treatment involves heating to a temperature above the volatilization or sublimation temperature of the unexposed material and below the thermal reactivity of the material. For example, for a polymerizable monomer, the material should be heated at a temperature above the sublimation temperature and below the thermal polymerization temperature. It should be understood that the RS A material with a thermal reaction temperature near or below the volatilization temperature may not be developed in this manner. In one embodiment, exposing the RSA to radiation causes a change in the temperature at which the material melts, softens, or flows. When the exposure is carried out in a pattern, this can be followed by a dry development process. The dry development process can include contacting the outermost surface of the element 120197.doc -22- 200841498 with an absorbent surface to absorb or absorb the softer portion. This: ., member &quot; can be applied in between, as long as it does not further affect the nature of the initial unexposed area. After the RSA treatment and exposure to light shot, the t-hai layer has a lower surface energy than the treatment 1. In the case where a portion of the RSA is removed after exposure to radiation, the area of the first layer covered by the RSA will have a lower surface energy than the area not covered by the enthalpy. One way to determine relative surface energy is to compare the contact angle of a given liquid on the first organic active layer before and after treatment with RSA. The contact angle as used herein is intended to mean the angle φ shown in Fig. 1. For a drop of liquid medium, the angle Φ is defined by the plane of the surface intersecting the line from the outer edge of the drop to the surface. Moreover, the angle 〇 is measured after the droplet is applied to the equilibrium position on the surface, i.e., the "stationary contact angle". Several manufacturers have created equipment capable of measuring contact angles. A second layer is then applied to the first layer treated by RSA. This second layer can be applied by any deposition technique. In one embodiment, the second layer is applied by a liquid deposition technique. In this case, a liquid composition comprises a second material which is dissolved or dispersed in a liquid medium, applied to the rsa-treated layer, and dried to form a second layer. The liquid composition is selected to have a surface energy greater than that of the first layer treated by RSA, but substantially equal to or less than the surface energy of the untreated first layer. Thus the liquid composition will wet the untreated first layer but will be excluded from the RS A treated zone. The liquid can expand over the area treated by RSA, but it will dewet. 120197.doc -23 - 200841498 In one embodiment, the RSA is patterned and the second layer is applied using a continuous liquid deposition technique. In one embodiment, the second layer is applied using a discontinuous liquid deposition technique. In one embodiment, the RSA is unpatterned and the second layer is applied using a discontinuous liquid deposition technique. In one embodiment, the first layer is applied to a liquid enclosure structure. Month b would be desirable to use a structure that is not sufficient to completely enclose, but still allows adjustment of the thickness uniformity of the printed layer. In this case, it may be desirable to control the wetting of the thickness adjustment structure, which provides both containment and uniformity. It is therefore desirable to be able to adjust the contact angle of the luminescent ink. Most surface treatments used for wrapping (a) such as 'CF4 plasma' do not provide this level of control. In a lean embodiment, the first layer is applied to a so-called bank structure. The bank structure is typically formed from a photoresist, an organic material (e.g., polyimide), or an inorganic material (oxide, nitride, and the like). The bank structure can be used for wrapping, liquid-opening the first layer of the y type to prevent color mixing; and, or when the first layer is used to improve its thickness from its liquid form dry material; and/or Hanxia ## is free from contact with the liquid. The underlying components can include conductive traces, conductive traces around the ray, m(d), (4), lyon transistors, electrodes, and the like. It is generally desirable to achieve two or more purposes for the formation of zones having different surface energies in the structure of the slabs (e.g., to prevent color mixing and also to improve: degree uniformity). One approach is to provide a bank structure with several layers, each layer having a different surface energy. A more cost-effective way to achieve surface energy adjustment is to adjust the surface energy by adjusting the radiation used by RSA. Fortunately, this adjustment can be in the form of energy w (power * exposure time), or by using a reticle pattern of different surface energies by means of a plate to expose the rsa (for example, to help halftone density cover) Cover exposed).曰 In the embodiments of the methods provided herein, the first and second organic active layers.兮 wear. ^ ^ kiL 0 曰白句一二五海弟 an organic active layer is formed on a first electrode, the first organic active layer is treated with a reactive surface active composition to reduce the surface energy of Μ And forming the second organic active layer on the treated first organic active layer. In one embodiment, the first organic active layer is formed by liquid deposition of a liquid composition comprising the first organic active material and a liquid medium. The liquid composition is deposited on an electrode and then dried to form a layer. In one embodiment, the first organic active layer is formed by a continuous liquid deposition process. These methods result in higher yields and lower equipment costs. In one embodiment, the RSA treatment is performed after forming the first organic active layer. In an embodiment, the RSA is applied as a separate layer to cover and contact the first organic active layer. In an embodiment, the rsa is deposited from a second liquid composition. The liquid deposition method can be continuous or inconsistent, as described above. In an embodiment, the rsa liquid composition is deposited using a continuous liquid deposition process. The thickness of the rsa layer may depend on the final use of the material. In some embodiments, the RSA layer has a thickness of at least 1 angstrom. In some embodiments, the RSA layer is between 100-3 〇〇fH 々戸 · · a iVl ^ angstroms, in some embodiments 1 〇〇〇 2 埃 angstroms. After the RSA treatment, the treated first organic active layer was exposed to light 120197.doc -25-200841498. The type of light shot used should depend on the sensitivity of the RSA, as described above. The exposure can be blanket-integrated, or the exposure can be exposed as a pattern. In one embodiment, exposing the RSA to radiation changes the solubility or dispersibility of the rsa in a liquid medium. In the embodiment, the exposure is carried out in accordance with a pattern. This can then be treated with a liquid medium to remove rsa exposed or unexposed portions of the RSA. In the embodiment, the rsa is radiation hardened and the unexposed portions are removed by the liquid medium. 4. Organic electronic device The method is further explained in terms of its application in an electronic device, but it is not limited to this application. Figure 2 is an exemplary electronic device, i.e., an organic light emitting diode (〇LED) display, which includes at least two organic active layers between two electrical contact layers. The electronic device 100 includes one or more layers 120 and 13() to facilitate injecting holes from the anode layer 110 into the photoactive layer 140. Generally, when two layers are present, the layer 120 adjacent to the anode is referred to as a hole injection layer or a buffer layer. The layer 13 adjacent to the photoactive layer is referred to as a hole transport layer. An optional electron transport layer 15 is interposed between the photoactive layer 140 and the cathode layer 160. Depending on the application of the device, the photoactive layer 140 can be an illuminating layer (for example, in a light-emitting diode or a luminescent electrochemical cell) excited by an applied voltage, and can respond to radiant energy and A layer of material that produces a signal with or without an applied bias (eg, in a photodetector). The device is not limited by the system, the driving method, and the mode of use. For a multi-color device, the photoactive layer 140 is composed of at least three different colors 120197.doc -26 - 200841498

色之不同區構成。X 带成w 丨问顏色之區可藉由印刷單獨著色區來 形成。或者,其可藉由形 且 Λ正饈層並將忒層之不同區用 ,、有不同顏色之發光材 ^^雜术貝轭。此一方法已闡述於 ,開之美國專利申請案第2004-009068號中。 ❻在中’本文所述之新穎方法可用於將—有機層 (弟一層)施加於一電極層(第—層)。在一實施例中,該第 一層係陽極110,且該第二層係緩衝層12〇。Different regions of color. The area where X is brought into the w color can be formed by printing a separate colored area. Alternatively, it may be formed by embossing the ruthenium layer and using different regions of the ruthenium layer, and luminescent materials having different colors. This method is described in U.S. Patent Application Serial No. 2004-009068. The novel method described herein can be used to apply an organic layer (layer) to an electrode layer (layer). In one embodiment, the first layer is an anode 110 and the second layer is a buffer layer 12〇.

在一些實施例中’本文所述之新穎方法可祕該裝置中 任何連續有機層對,其中該第二層係包含於特定區中。在 該新穎方法之一實施例中,第二有機活性層係光活性層 140,且第一有機活性層係恰在層14〇之前施加的裝置層。 在許多情況下,該裝置係以該陽極層開始構造。當存在電 洞傳輸層13〇時,RSA處理應在施加光活性層14〇層之前施 加於層130。當不存在層13〇時,將RSA處理施加於層 120。在其中該裝置係以該陰極開始構造之情況下,該 RSA處理應在施加光活性層14〇之前施加於電子傳輸声 150。 θ 在该新穎方法之一實施例中,該第二有機活性層係電洞 傳輸層130,且該第一有機活性層係恰在層13〇之前施加的 裝置層。在其中該裝置係以該陽極層開始構造之實施例 中’該RS Α處理應在施加電洞傳輸層13 〇之前施加於緩衝 層 120 〇 在一實施例中,陽極110係以平行條帶圖案形成。緩衝 層120且視情況電洞傳輸層130係作為連續層形成於陽極 120197.doc -27- 200841498 上忒RSA係作為單獨層直接施加於層130(當存在 或層120(當声六士 士 仔在 曰 子在訏)上❶該RSA係以一圖案曝露以 便曝露該等陽極條帶與該等陽極條帶之外邊緣間之區。 /亥裝置中之層可由任何習知用於料層之材料構成。該 裝置可包括-可毗鄰於陽極層110或陰極層150之載體或基 板(未出)。在大多數情況下,該載體係础鄰於陽極層 110。錢體可為撓性或剛性、有機或無機材料。通常, 玻璃或撓性有機膜可用作一载體。陽極層110為一與陰極 層150相比對於電祠注入更為有效之電極。該陽極可包括 含金屬、混合金屬、合金、金屬氧化物或混合氧化物之材 料。適宜材料包括2族元素(即,Be、Mg、Ca、Sr、Ba、 叫、11族元素、4、5及6族元素及81〇族過渡元素之混合 氧化物。若陽極層110可透光,則可使用12、13及14族元 素之混合氧化物’例如姻-錫氧化物。本文所用短語「混 合氧化物」係指具有選自2族元素或第12、13幻4族元素 的兩種或以上不同陽離子之氧化物。用於暢極層110之材 料的-些非限定性特定實例包括(但不限於)鋼·錫氧化物 (「™」)、銘-錫氧化物、金、銀、銅及録。該陽極亦可 包,-有機材料,例如’聚苯胺、聚噻吩或聚吡咯。 陽極層110可藉由一化學或物理氣體沈積製程或旋轉澆 注製程形成。化學氣體沈積可作為一電榮增強之化學氣體 沈積(「PECVD」)或金屬有機化學品氣體沈積 (「MOCVD」)實施。物理氣體沈積可包括賤射之所有形 式,其包括離子束滅射以及電子束蒸發及電阻蒸發。物理 120197.doc -28- 200841498 氣體沈積之具體形式包括“磁控管濺射及誘導耦合電漿物 理氣體沈積(「IMP-PVD」)。此等濺射技術在半導造 業中已為吾人所熟知。 t 通常,陽極層110在微影作業中進行圖案化。該圖案可 根據需要改變。該等層可藉由(例如)在施加第一電接觸層 材料之前將—圖案化遮罩或抗钕劑纽第-撓性複合障^ 結構上以一圖案形成。或者,該等層也可作為一整體2 (亦稱為毯覆式沈積)施加,並隨後使用(例如)一圖案化抗 钱層及濕化學或乾㈣技藝進行圖案化。亦可使用該項技 術中習知之其它圖案化製程。t該等電子裝置位於—陣列 中時,陽極層110通常形成基本平行且在長度方向基本沿 同一方向延伸之若干條帶。 σ 緩衝層120起促使電洞注入該光活性層及使該陽極表面 平滑以防止該裝置短路之作用。該缓衝層通常由通常摻雜 有質子酸之聚合物材料形成(例如聚苯胺(ΡΑΝΙ)或聚= =氧基售吩(PED0T))。該等質子酸可為(例如)聚(苯乙.烯 磺酸)、聚(2-丙烯醯胺基_2_甲基_丙烷磺酸)、及諸如此 類。緩衝層120可包含電荷轉移化合物、及諸如此類,例 如銅酞菁與四硫富瓦烯-四氰基啥諾二甲烷系統(T T F _ tCNQ)。在一實施例中,緩衝層i2〇係由一導電聚合物與 一可形成膠體的聚合酸之分散液形成。該等材料已闇述於 (例如)公開的美國專利申請案第2004-0102577號及第2004- 0127637號中。 緩衝層120可藉由任何沈積技術施加。在一實施例中, 120197.doc •29- 200841498 。亥緩衝層係藉由溶液沈積方法施加,如上文所述。在一實 知例中,該緩衝層係藉由連續溶液沈積方法施加。In some embodiments, the novel methods described herein may be directed to any continuous organic layer pair in the device, wherein the second layer is contained in a particular zone. In one embodiment of the novel method, the second organic active layer is a photoactive layer 140, and the first organic active layer is a device layer applied just prior to layer 14〇. In many cases, the device begins to construct with the anode layer. When the hole transport layer 13 is present, the RSA process should be applied to layer 130 prior to application of the photoactive layer 14 layer. The RSA process is applied to layer 120 when layer 13 is absent. In the case where the device is constructed with the cathode, the RSA treatment should be applied to the electron transporting sound 150 before the photoactive layer 14 is applied. θ In one embodiment of the novel method, the second organic active layer is a hole transport layer 130, and the first organic active layer is a device layer applied just prior to layer 13〇. In an embodiment in which the device is constructed with the anode layer, the RS treatment should be applied to the buffer layer 120 prior to application of the hole transport layer 13 . In one embodiment, the anode 110 is in a parallel strip pattern. form. The buffer layer 120 and optionally the hole transport layer 130 is formed as a continuous layer on the anode 120197.doc -27- 200841498. The RSA system is applied as a separate layer directly to the layer 130 (when present or layer 120 (when the sound is sixties) The RSA is exposed in a pattern to expose the areas between the anode strips and the outer edges of the anode strips. The layers in the apparatus can be used in any conventional layer. The device may comprise a carrier or substrate (not shown) that may be adjacent to the anode layer 110 or the cathode layer 150. In most cases, the carrier is adjacent to the anode layer 110. The body may be flexible or A rigid, organic or inorganic material. Typically, a glass or flexible organic film can be used as a carrier. The anode layer 110 is an electrode that is more efficient for electrical injection than the cathode layer 150. The anode can include a metal, Mixing materials of metals, alloys, metal oxides or mixed oxides. Suitable materials include Group 2 elements (ie, Be, Mg, Ca, Sr, Ba, 、, Group 11 elements, Groups 4, 5 and 6 elements and 81〇) a mixed oxide of a family transition element. If the anode layer 110 is For light, a mixed oxide of elements of Groups 12, 13 and 14 can be used, such as a s-tin oxide. The phrase "mixed oxide" as used herein means having an element selected from Group 2 elements or Groups 12 and 13 Oxides of two or more different cations. Some non-limiting specific examples of materials for the breeze layer 110 include, but are not limited to, steel tin oxide ("TM"), in-tin oxide, Gold, silver, copper and recorded. The anode may also be coated with an organic material such as 'polyaniline, polythiophene or polypyrrole. The anode layer 110 may be formed by a chemical or physical gas deposition process or a rotary casting process. Deposition can be performed as a chemically enhanced chemical gas deposition ("PECVD") or metal organic chemical gas deposition ("MOCVD"). Physical gas deposition can include all forms of sputtering, including ion beam emission and electron beam Evaporation and resistance evaporation. Physics 120197.doc -28- 200841498 Specific forms of gas deposition include "magnetron sputtering and induced coupling plasma physical gas deposition ("IMP-PVD"). These sputtering techniques are semi-conducting industry It is well known to us. t Typically, the anode layer 110 is patterned in a lithographic process. The pattern can be varied as desired. The layers can be patterned, for example, prior to application of the first electrical contact layer material. The mask or the anti-caries agent Newton-flexible composite barrier is structurally formed in a pattern. Alternatively, the layers may be applied as a unitary 2 (also known as blanket deposition) and subsequently used (for example) A patterned anti-money layer and wet chemical or dry (four) technique are used for patterning. Other patterning processes known in the art can also be used. When the electronic devices are in the array, the anode layers 110 are typically formed substantially parallel and A plurality of strips extending substantially in the same direction in the length direction. The σ buffer layer 120 serves to cause holes to be injected into the photoactive layer and to smooth the surface of the anode to prevent shorting of the device. The buffer layer is typically formed from a polymeric material that is typically doped with a protic acid (e.g., polyaniline (poly) or poly = oxy phenoxy (PEDOT). The protic acids may be, for example, poly(phenylethylene sulfonic acid), poly(2-acrylamido-2-methyl-propanesulfonic acid), and the like. Buffer layer 120 may comprise a charge transfer compound, and the like, such as copper phthalocyanine and tetrathiafulvalene-tetracyanonono-methane system (T T F _ tCNQ). In one embodiment, the buffer layer i2 is formed from a dispersion of a conductive polymer and a colloid-forming polymeric acid. Such materials are described in, for example, U.S. Patent Application Serial Nos. 2004-0102577 and 2004- 0127637. Buffer layer 120 can be applied by any deposition technique. In an embodiment, 120197.doc • 29- 200841498. The buffer layer is applied by a solution deposition method as described above. In one embodiment, the buffer layer is applied by a continuous solution deposition process.

用於可選層130之電洞傳輸材料的實例已由Y. Wang匯總 於(例如)Kirk-〇thmer Encyclopedia of Chemical Technology (第四版,第18卷,第837_860頁,1996年)中。可使用電洞 傳輸分子及聚合物二者。常用電洞傳輸分子包括(但不限 於)· 4,4’,4&quot;·叁(N,N-二苯基_胺基)三苯基胺(TDATA); 4’4,4 -卷(N-3-曱基苯基-N_苯基-胺基)·三苯基胺 (MTDATA),N,N’-二苯基_N,N匕雙(3_曱基苯基卜以」,-聯苯 基]_4,4’-二胺(TPD);丨,1-雙[(二-4-甲苯基胺基)苯基]環己 烧(TAPC) ; N,N’-雙(4-甲基苯基)_n,N,-雙(4-乙基苯基) -[1,1-(3,3’-二曱基)聯苯基]-4,4’_二胺(]£了卩〇);四-(3-甲基 苯基)-队队&gt;1,,&gt;^2,5-伸苯基二胺(1&gt;〇八);(^苯基_4長^二 苯基胺基苯乙烯(TPS);對_(二乙基胺基)苯甲醛二苯基腙 (DEH),三苯胺(TPA);雙[4-(N,N•二乙基胺基)_2_甲基苯 基](4·曱基苯基)甲烷(MPMP) ; 1-苯基_3_ [對_(二乙基胺基) 苯乙烯基]-5-[對-(二乙基胺基)苯基]吼唑啉(ppR或 DEASP) ; l,2-反-雙(9H_ 味唑冬基)環丁烷(Dczb); N,N,N’,N’-四(4-曱基苯基聯苯基 &gt;4,4,-二胺(TTB); Ν,&gt;Γ-雙(萘-ij)_N,N,-雙_(苯基)聯苯胺(α-ΝρΒ);及卟啉 類化合物,例如銅酞菁。常用電洞傳輸聚合物包括(但不 限於)聚乙稀基。卡哇、(苯基曱基)聚石夕烧、聚(二氧基嘆 吩)、聚苯胺及聚吡咯。亦可藉由將電洞傳輸分子(例如彼 等上述者)摻雜於諸如聚苯乙烯及聚碳酸酯等聚合物中獲 120197.doc -30- 200841498 行二傳輪聚合物。在—些實施例中,該電洞傳輪材料包 括可又养聚物或聚合物材肖。形成該電洞#輪層後,將 ;斗用幸田射處理以實施交聯。在一些實施例中, 私 係熱輻射。 射 电洞傳輸層13〇可藉由任何沈積技術施加。在—實施例 中名電/同傳輸層係藉由溶液沈積技術施加,如上文所 述。在一實施例中,該電洞傳輸層係藉由連續溶液沈積方 法施加。 任何有機電致發光(「EL」)材料皆可用於光活性層 中’該材料包括(但不限於)小分子有機螢光化合物、螢光 與磷光金屬錯合物、共軛聚合物及其混合物。螢光化合物 之實例包括(但不限於)嵌二萘、茈、紅螢烯、香豆素、其 衍生物、及其混合物。金屬錯合物之實例包括(但不限於) 金屬螯合之類噁辛化合物,例如,叁(8_羥基喹啉基)鋁 (A1 q 3)’紅ί衣金屬化之錶及翻電致發光化合物,例如錶與 苯基ϋ比咬、苯基喹啉、或苯基嘧啶配位體之錯合物(如An example of a hole transport material for the optional layer 130 has been summarized by Y. Wang in, for example, Kirk-〇thmer Encyclopedia of Chemical Technology (Fourth Edition, Vol. 18, pp. 837-860, 1996). Holes can be used to transport both molecules and polymers. Common hole transport molecules include, but are not limited to, 4,4',4&quot;(N,N-diphenyl-amino)triphenylamine (TDATA); 4'4,4-volume (N -3-nonylphenyl-N-phenyl-amino)·triphenylamine (MTDATA), N,N′-diphenyl-N,N匕bis(3_fluorenylphenyl) -biphenyl]_4,4'-diamine (TPD); hydrazine, 1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC); N,N'-double (4 -Methylphenyl)_n,N,-bis(4-ethylphenyl)-[1,1-(3,3'-diindenyl)biphenyl]-4,4'-diamine (] £卩〇()); tetrakis-(3-methylphenyl)-team&gt;1,,&gt;^2,5-phenylenediamine (1&gt;〇8); (^phenyl_4 long ^Diphenylaminostyrene (TPS); p-(diethylamino)benzaldehyde diphenylsulfonium (DEH), triphenylamine (TPA); bis[4-(N,N•diethylamine) Base)_2_methylphenyl](4·nonylphenyl)methane (MPMP); 1-phenyl_3_[p-(diethylamino)styryl]-5-[p--(two Ethylamino)phenyl]oxazoline (ppR or DEASP); l,2-trans-bis(9H-isoxazolidine)cyclobutane (Dczb); N,N,N',N'-tetra 4-nonylphenylbiphenyl &Gt;4,4,-diamine(TTB); Ν, &gt; Γ-bis(naphthalene-ij)_N,N,-bis-(phenyl)benzidine (α-ΝρΒ); and porphyrin compounds, For example, copper phthalocyanine. Common hole transport polymers include, but are not limited to, polyethylene. Kawa, (phenyl phenyl) polyglycol, poly (dioxy sin), polyaniline and polypyrrole It is also possible to obtain 120197.doc -30- 200841498 two-pass polymer by doping a hole transporting molecule (for example, the above) into a polymer such as polystyrene and polycarbonate. In some embodiments, the hole-passing material comprises a polymerizable polymer or a polymer material. After forming the hole # wheel layer, the bucket is treated with Koda to perform cross-linking. In some embodiments, private Thermal radiation. The radio transmission layer 13 can be applied by any deposition technique. In the embodiment the nominal/co-transport layer is applied by a solution deposition technique, as described above. In one embodiment, the electricity The hole transport layer is applied by a continuous solution deposition method. Any organic electroluminescence ("EL") material can be used in the photoactive layer. Including, but not limited to, small molecule organic fluorescent compounds, fluorescent and phosphorescent metal complexes, conjugated polymers, and mixtures thereof. Examples of fluorescent compounds include, but are not limited to, pentaphthalene, anthracene, and fluorene. , coumarin, derivatives thereof, and mixtures thereof. Examples of metal complexes include, but are not limited to, organochelating compounds such as ruthenium (8-hydroxyquinolinyl) aluminum (A1 q 3 ) ) 'Red metal metallized surface and electroluminescent compound, such as a complex with a phenyl hydrazine bite, a phenylquinoline, or a phenylpyrimidine ligand (eg

Petrov 4人之美國專利第6,670,64 5號及公開之PCT申請案 W0 03/063555及W0 2004/016710中所揭示者)及有機金屬 錯合物(例如,公開之P C T申請案W Ο 0 3 / 0 0 8 4 2 4、 WO 03/091688及W0 03/040257中所揭示者);及其混合 物。Thompson等人在美國專利第6,303,238號中及Burrows 與 Thompson在公開 PCT 申請案 WO 00/70655及 WO 01/41512 中已經闡述了包含帶電主體材料及金屬錯合物之電致發光 層。共軛聚合物之實例包括(但不限於)聚(伸苯基伸乙烯 120197.doc -31 - 200841498 基)、聚第、聚(螺二苐)、聚噻吩、聚(對_伸苯基)、其共聚 物、及其混合物。 光活性層140可藉由任何沈積技術施加。在一實施例 中,言έ光活性層係藉由溶液沈積方法施加,如上文所述。 - 在—實施例中,該光活性層係'藉由連續溶液沈積方法施 加0 可k層1 5 0可具有便於電子注入/傳輸且亦可作為一限制 • 層以防止層介面處反應中止兩種作用。更具體而言,層 可促進電子遷移並在層14〇與16〇直接接觸之狀況下降 低反應中止之可能性。用於可選層150之材料之實例包括 (但不限於)金屬螯合之㈣辛化合物(例如,卿或諸如此 類);基於菲咯啉之化合物(例如,2,9_二甲基_4,7_二苯基 -l,l〇-菲咯啉(「DDPA」)、4,7_二苯基_u〇•菲咯啉 (「DPA」)或諸如此類);唑類化合物(例如,聯苯基) -5-(4-第三-丁基苯基)噁二唑(「pBD」或諸如此 鲁 類)、3-(4-聯苯基)_4_苯基·5_(4_第三_丁基苯基h,2,心三唑 (「TAZ」或諸如此類);其他類似化合物;或其任一或多 種之組合。或者,可選層15〇可為無機物且可包含仏〇、 LiF、Li20或諸如此類。 陰極160為一對於注入電子或負電荷載流子特別有效之 電極。陰極160可為任何其功函數較第一電接觸層(在本發 明之狀況下指陽極層110)為低之金屬或非金屬。在一實施 例中,術言吾「低功函數」意、欲指一材料之功函數不大於約 4.4eV。在一實施例中,「高功函數」意欲指一材料之功函 120197.doc -32- 200841498 數至少為约4.4 eV。 用於該陰極層之材料登 [灿、叫、2族全屬^&quot;驗金屬(例如^、他、 12族金屬、射元幸^ Mg、Ca、Ba或諸如此類)、 蜀鑭糸7G素(例如, 系元素(例如,Th、u u或诸如此類)及锕 銦、紀等材料及a组」如此類)。亦可使用諸如銘、 限制性實例包括&quot;Η π 曰160之材料的特定非 例包括(但不限於)鋇、鐘 釔、鎂、釤及其合金及組合。 銪、铷、 陰極層160通常藉由仆與 在盆它〜存丨φ 予或物理氣體沈積製程形成。 ㈣η, 機電子裝置中可存在額外層。 田μ裝置係以陽極側開始 之RSA處理步驟可在夺貝,J本文所述新穎方法 後、形成雷 ' 10之後、形成緩衝層120之 $成電洞傳輸層130、或其任何組 裝置係以陰極側開始製 “。“亥U.S. Patent No. 6,670,64, to the disclosure of U.S. Pat. / 0 0 8 4 2 4, as disclosed in WO 03/091688 and WO 03/040257; and mixtures thereof. An electroluminescent layer comprising a charged host material and a metal complex has been described by Thompson et al. in U.S. Patent No. 6,303,238, and to Burrows and Thompson, the disclosure of PCT applications WO 00/70655 and WO 01/41512. Examples of conjugated polymers include, but are not limited to, poly(phenylene extended ethylene 120197.doc -31 - 200841498 base), polydiene, poly(spirobifluorene), polythiophene, poly(p-phenylene), Its copolymers, and mixtures thereof. Photoactive layer 140 can be applied by any deposition technique. In one embodiment, the photoactive layer is applied by a solution deposition process as described above. In the embodiment, the photoactive layer is applied by a continuous solution deposition method. The 0k layer 150 can have electron injection/transportation and can also serve as a limiting layer to prevent the reaction at the layer interface from being suspended. Role. More specifically, the layer promotes electron migration and reduces the likelihood of a low reaction suspension in the case where the layer 14 is in direct contact with 16 〇. Examples of materials for the optional layer 150 include, but are not limited to, metal chelated (tetra) octyl compounds (eg, qing or the like); phenanthroline-based compounds (eg, 2,9-dimethyl-4, 7_Diphenyl-l,l-phenanthroline ("DDPA"), 4,7-diphenyl-u〇•phenanthroline ("DPA") or the like); azole compounds (eg, Phenyl)-5-(4-t-butylphenyl)oxadiazole ("pBD" or such a ruthenium), 3-(4-biphenyl)_4_phenyl·5_(4_ Tri-butylphenyl h, 2, cardiotriazole ("TAZ" or the like); other similar compounds; or a combination of any one or more thereof. Alternatively, the optional layer 15 can be inorganic and can contain ruthenium, LiF, Li20 or the like. Cathode 160 is an electrode that is particularly effective for injecting electrons or negative charge carriers. Cathode 160 can be any of its work functions compared to the first electrical contact layer (in the context of the present invention, anode layer 110) Low metal or non-metal. In one embodiment, the term "low work function" means that the work function of a material is not greater than about 4.4 eV. In one embodiment, "high power" The number is intended to refer to a material's work function 120197.doc -32- 200841498. The number is at least about 4.4 eV. The material used for the cathode layer is [can, call, 2 family all ^^"; metal (such as ^, he , Group 12 metals, shots, Mg, Ca, Ba, or the like), 蜀镧糸7G (for example, elemental elements (eg, Th, uu, or the like) and indium, yttrium, etc., and a group" Specific examples of materials such as, for example, indefinite examples including &quot;Η π 曰 160 include, but are not limited to, ruthenium, samarium, magnesium, strontium, alloys and combinations thereof. 铕, 铷, cathode The layer 160 is usually formed by a servant or a physical gas deposition process in the basin. (IV) η, an additional layer may exist in the electronic device. The field device is based on the anode side and the RSA processing step can be used to capture the shellfish. After the novel method described herein, after forming the Ray '10, the formation of the buffer layer 120 into the hole transport layer 130, or any group of devices thereof is started on the cathode side.

處理牛驟/ J本文所述新穎方法之R.SA 處里乂驟可在形成陰極16〇、 之後實施。 Η傳輸層150或其任何組合 各不同層可具有任何適當厚度。盔 妒讲妁, …、械知極層110通常不 赵過約500奈米,例如大約1〇 吊不 傳輪声130夂6、呂a 十,緩衝層120及電洞 得秭層130各自通常不超過約25〇 半·止冰α只 、木例如大約50-200奈 ,’㈢140通常不超過約1000太乎 太半.环、登揉不木,例如大約50-80 不未,了選層15〇通常不超過約1〇〇太 太半·日昤# a , 不木,例如大約20-80 不未,且陰極層160通常不超過約100太半 太半。芒晤#昆, 不永,例如大約1-50 不水右除極層110或陰極層160需透 該戶之厚声I座心 而透過至少部分光線,則 A潛之与度不應超過約100奈米。 120197.doc -33 - 200841498 實例 以下實例將進一步闡述本文所述概念,該等實例並不限 制申請專利範圍中所述的本發明範圍。 實例1 實例1闡述與該第一層之形成同時實施之RSA處理。該 第一層係有機活性層。 ~ 塗層 1 :將材料 A(— 種來自 Sumit〇m〇 Chemicai c〇i, • T〇ky〇, Japan之可交聯電洞傳輸材料)之第一有機活性層自 對-二甲苯旋塗於載玻片上。 塗層2 · —第一有機活性層係將自含95%材料入及作為 RSA之氟化不飽和酯單體(z〇nyl(g) 8857A,自E. L加p⑽ de Nemours and Company,Wilmingi〇n,DE購得)之溶液藉 由旋塗於載玻片上製得。 將兩個塗層皆於130下在熱板上在空氣中乾燥。調節 旋塗條件以便乾燥後提供具有相似厚度之膜。該經塗佈材 _ 料係在具有氮氣氣氛之對流烘箱中於200°C下熱固化30分 鐘將種由BD052及BH140(Idemitsu Kosan有限公司, Chiba,Japan)以8:92之比例以l5%總固體存於苯甲醚中構 成之發光油墨使用MicroFab印刷機印刷於各個塗層上,其 中階段溫度為50°C。藉由量測乾燥後所印刷墨滴之直徑來 比較該油墨在兩個表面上之擴展。與不含RSA之塗層1相 比’在包含RSA之塗層2上油墨擴展減少7%。苯甲醚之接 觸角在塗層1上為約9度,且在含z〇nyl⑧8857A之塗層2之 表面上為約1 5度。 120197.doc -34- 200841498 實例2 實例2闡述形成該第一層後之RSA處理。該第一層係有 機活性層。 在載玻片上製備材料A之塗層並於200°C下在具有氮氣氣 氛之對流烘箱中固化30分鐘。將一氟化丙烯酸酯單體作為 RSA(Zonyl® TA-N、自 Ε· I. du Pont de Nemours and Company, Wilmington,DE購得)之溶液旋塗於固化材料A表 面上。該RSA溶液係以約20%固體存於六氟丙氧基苯中。 該RSA係藉由於130°C下在熱板上在空氣中固化。藉由在 三氟甲苯中在培養皿中浸泡1 5分鐘沖洗掉任何未固化 RS A,並於環境溫度下在空氣中乾燥。使用苯曱醚所量測 經固化未塗佈材料A之接觸角為约9度。若該表面係簡單用 三氟甲苯沖洗(無RSA塗層),則在實驗誤差内經固化未塗 佈材料A之接觸角係相同的。若該RS A係塗佈於材料A上並 用三氟甲苯洗滌而未在烘箱中使RSA反應,則在實驗誤差 内該接觸角係相同的。烘箱固化RSA表面之接觸角為27 度。此表明,可施加及去除該RS A而不影響下伏表面能, 且可容易地量測固化膜之差異。 實例3 實例3闡述形成該第一層後之RSA處理。該第一層係有 機活性層。 將載玻片用材料A塗佈並如上文所述熱固化。在一些載 玻片上,將材料A利用上述RSA(Zonyl® TA-N)之溶液塗 佈,並將該RSA於環境下乾燥。使用VEECO NT3300干涉 120197.doc -35- 200841498 式輪廓曲線儀測定該RSA塗 RSA在*友士 土曰之;子度為約1〇〇埃(A)。將該 工乳中㈣於μ減(365_4{)5奈米,2 7 公分);遮蔽—车+杳4 μ 十方 “蚊丰此載玻片以防止曝露。曝露後,將 化RSA藉由浸泡於三氟甲 A'掉。苯甲醚在复 ^ Α曝路於光化輻射之區域中之接觸角為 驗誤差範圍内,該未曝露區域中之接觸角與材料a相同式 ,表明未曝露RSA已完全溶解且可自材料八表面沖洗乾 :。將材料A無RSA之塗層曝露於光化輪射且接觸角未改 變°此表明’ #由曝露於光化輻射在RSA中產生―圖案, 且表面能之改變係由於該R s A而非該等處理步驟。 實例4 實例4闡述形成該第一層後之RSA處理。此實例亦闊述 圍包,如同印刷發光油墨期間所實施的一樣。此實例係展 示於圖3至6中。Treatment of the bolus / J The procedure at the R. SA of the novel method described herein can be carried out after the formation of the cathode 16 〇. The ruthenium transport layer 150, or any combination thereof, can have any suitable thickness.妒 妒 妒 妁 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , No more than about 25 〇 half, ice only α, wood, for example, about 50-200 奈, '(三) 140 usually not more than about 1000 is too much. The ring, the raft is not wood, for example about 50-80 is not, the layer 15 〇 usually does not exceed about 1 〇〇 半 半 · a a a , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,芒会# Kun, not always, for example, about 1-50, the right depolarization layer 110 or the cathode layer 160 needs to pass through the thick voice of the household and pass at least part of the light, then the degree of A potential should not exceed 100 nm. 120197.doc -33 - 200841498 EXAMPLES The following examples will further illustrate the concepts described herein, and are not intended to limit the scope of the invention described in the claims. Example 1 Example 1 illustrates the RSA treatment performed simultaneously with the formation of the first layer. The first layer is an organic active layer. ~ Coating 1: The first organic active layer of material A (the kind of crosslinkable hole transport material from Sumit〇m〇Chemicai c〇i, • T〇ky〇, Japan) is spin-coated on p-xylene On the slide. Coating 2 · The first organic active layer will be self-contained with 95% material and used as a fluorinated unsaturated ester monomer of RSA (z〇nyl(g) 8857A, from E. L plus p(10) de Nemours and Company, Wilmingi A solution of 〇n, DE purchased) was prepared by spin coating on a glass slide. Both coatings were dried in air on a hot plate at 130. The spin coating conditions are adjusted to provide a film having a similar thickness after drying. The coated material was thermally cured at 200 ° C for 30 minutes in a convection oven with a nitrogen atmosphere. The ratio was 5% from BD052 and BH140 (Idemitsu Kosan Co., Ltd., Chiba, Japan) at a ratio of 8:92. The luminescent ink consisting of total solids in anisole was printed on each of the coatings using a MicroFab printer with a stage temperature of 50 °C. The spread of the ink on both surfaces was compared by measuring the diameter of the ink droplets printed after drying. Compared to coating 1 without RSA, the ink spread was reduced by 7% on coating 2 containing RSA. The contact angle of anisole was about 9 degrees on the coating 1 and about 15 degrees on the surface of the coating 2 containing z〇nyl88857A. 120197.doc -34- 200841498 Example 2 Example 2 illustrates the RSA treatment after formation of the first layer. The first layer is an organic active layer. A coating of material A was prepared on a glass slide and cured in a convection oven with a nitrogen atmosphere at 200 ° C for 30 minutes. A solution of a monofluorinated acrylate monomer as RSA (Zonyl® TA-N, available from I. du Pont de Nemours and Company, Wilmington, DE) was spin-coated on the surface of the cured material A. The RSA solution was stored in hexafluoropropoxybenzene at about 20% solids. The RSA was cured in air on a hot plate at 130 °C. Any uncured RS A was rinsed off by soaking in a petri dish for 15 minutes in trifluorotoluene and dried in air at ambient temperature. The contact angle of the cured uncoated material A was about 9 degrees as measured using phenyl ether. If the surface is simply rinsed with trifluorotoluene (without RSA coating), the contact angle of the cured uncoated material A is the same within experimental error. If the RS A system is coated on material A and washed with trifluorotoluene without reacting RSA in an oven, the contact angle is the same within experimental error. The contact angle of the oven-cured RSA surface was 27 degrees. This indicates that the RS A can be applied and removed without affecting the underlying surface energy, and the difference in the cured film can be easily measured. Example 3 Example 3 illustrates the RSA treatment after formation of the first layer. The first layer is an organic active layer. The slides were coated with material A and thermally cured as described above. On some slides, material A was coated with a solution of the above RSA (Zonyl® TA-N) and the RSA was dried under ambient conditions. Using the VEECO NT3300 Interference 120197.doc -35- 200841498 The profilometer was used to determine that the RSA was coated with RSA at *Friends' soil; the sub-degree was about 1 〇〇 (A). In the work milk (4) minus μ (365_4{) 5 nm, 2 7 cm); shading - car + 杳 4 μ 十方 "Mosquito Feng this slide to prevent exposure. After exposure, will RSA by exposure Soaked in trifluoromethyl A'. The contact angle of anisole in the region of the exposure to actinic radiation is within the error range. The contact angle in the unexposed area is the same as that of material a, indicating that Exposure to RSA is completely soluble and can be rinsed from the surface of material 8. The material A without RSA is exposed to the actinic shot and the contact angle is unchanged. This indicates that '# is exposed to actinic radiation in RSA' The pattern, and the change in surface energy, is due to the R s A rather than the processing steps. Example 4 Example 4 illustrates the formation of the first layer after the RSA treatment. This example also broadly describes the package as implemented during printing of the luminescent ink. The same is shown in Figures 3 to 6.

將具有約1100埃厚之銦錫氧化物(IT〇)塗層的玻璃基板 (在圖3中示為200)以微影蝕刻方式圖案化以產生ιτ〇線之 陣列(不為210),其中寬度為約9〇微米,且該等線間之間距 為1〇微米。將材料Α之層220塗佈於線陣列上並於2〇〇它在 具有氮氣氣氣之對流烘箱中固化3 〇分鐘,如圖4中所示。 經材料A塗佈之ITO線圖示為211。在一基板藉由自六氟丙 氧基苯旋塗將Zonyl® TA-N之塗層230施加於材料a上,並 在空氣中乾燥,如圖5中所示。使用負性光罩將此塗層曝 露於來自其發射主要介於365-404奈米間之源的輻射以便 曝露區域覆蓋ITO線間之間隙、及該ιτο線邊緣2-3微米。 120197.doc -36- 200841498 該曝露為約3.8 J/cmA2。將該等板在三氟甲苯中洗滌以去 除未曝露RSA。圖6展示顯影後之工件,其具有rSA覆蓋區 211及在ITO上之材料A覆蓋區230及在玻璃上之材料a覆蓋 區220。BH119及BH215(二者皆來自Idemitsu)以8:92之比例 以1.5%總固體存於苯甲醚中構成之發光油墨使用Mig〇Fab 印刷機在環境下印刷於ιτο線上。墨滴體積為約4〇_45微微 升’且墨滴間距為〇 · 〇 8毫秒’此產生連續印刷線。在無 RS A之面板上,印刷線擴展約200-300微米;換言之,該油 墨擴展越過3根ITO線。在實際印刷製程中此將導致不可接 文的顏色混合。在具有印刷RSA之面板上,該油墨完全圍 包於經遠RSA處理之區域中,且獲得高品質經印刷裝置。 實例5 實例5闡述形成該第一層後之rS a處理。 如上文所述製備材料A之塗層並熱固化。然後如上文所 述將該等用Zonyl® TA-N之RSA塗層塗佈。該等RSA塗層 接受尚達約4 J/cm 2之毯覆式曝露。曝露後將該等塗層在 三氟甲苯中洗滌,並利用苯甲醚量測接觸角。苯曱醚接觸 角自約9度(材料A表面)調整至40-45度。若在空氣或惰性 氣氛中實施曝露,則不能觀察到明顯差異。 實例6 實例6闡述形成該第一層後之rs A處理,其中經由昇華 實施未曝露區域之去除。 如上文所述製備材料A之塗層並熱固化。然後該等利用 丙細酸一十一氟十二烧基醋之;RS A塗層藉由自存於全敦辛 120197.doc -37- 200841498 燒中之3%重量/體積溶液旋塗來塗佈。該等rsa塗層之一 接叉約1.5 J/Cm2之毯覆式·^曝露;另一塗層未接受而曝 露。將該兩個塗層於195°C下在熱板上在空氣中烘烤20分 鐘,並利用苯甲醚量測接觸角。在曝露於UV輻射之RSA塗 層^苯甲醚接觸角為約55度。在未曝露於UV輻射之塗層 上本甲秘接觸角為10度。此表明,未曝露於射之腿 可藉由加熱去除。若該RSA塗層已以一圖案曝露於而輕射 ,加熱’則在該等曝露區中所保留之⑽將具有約55 度之接=角,且未曝露區將具有約1〇度之接觸角。 應:意’並不需要上文在一般說明或實例中所闡述之所 以能不需要一部分具體行為,且除本文所闊述者 順序並非必須係其實施之順序。更進步’㈣舉行為之 铁月書中’已參考具體實施例閣述了若干概念。 變,此並不背離下文申嗜專利進仃各種修改及改 因此,岸… 乾圍所闊明之本發明範圍。 義,且戶書及附圖具㈣釋性而非限定性意 所有此卓修改皆意欲包括於本發明範圍内。 本文已根據具體實施例描述 方案及任何可達成任何益處、優點或解決問題ί 出之要件皆不應被理解為係任何 之更大 關鍵、必需或基本要件。 $申-專利範圍之一 應理解,本文為清晰起見結合單獨實施例所述的某些特 120l97.doc -38- 200841498 單-實施例中組合提供。相反,㈣便起見結合 早貫施例所述的各特徵亦可單獨或以任何子組合提供。 此外,當以範圍形式闡述數值時其包括此範圍内的每一 各個數值。 【圖式簡單說明】 在Ik附圖中闡述實施例以更好的理解本文所呈現之概 念。A glass substrate (shown as 200 in Figure 3) having an indium tin oxide (IT〇) coating of about 1100 angstroms is patterned in a lithographically etched manner to produce an array of ιτ〇 lines (not 210), wherein The width is about 9 microns and the distance between the lines is 1 inch. The layer of material tantalum 220 was coated onto a wire array and cured in a convection oven with nitrogen gas for 3 minutes, as shown in Figure 4. The ITO line coated with material A is shown as 211. A coating 230 of Zonyl® TA-N was applied to the material a by spin coating from a hexafluoropropoxybenzene on a substrate and dried in air as shown in FIG. The coating is exposed to radiation from a source that emits primarily between 365-404 nm using a negative mask such that the exposed area covers the gap between the ITO lines and the edge of the line is 2-3 microns. 120197.doc -36- 200841498 The exposure is about 3.8 J/cmA2. The plates were washed in trifluorotoluene to remove unexposed RSA. Figure 6 shows the developed workpiece having an rSA footprint 211 and a material A footprint 230 on the ITO and a material a footprint 220 on the glass. BH119 and BH215 (both from Idemitsu) were printed on the ιτο line in an environment using a Mig〇Fab printer at a ratio of 8:92 with 1.5% total solids in anisole. The drop volume is about 4 〇 45 45 μl and the ink drop pitch is 〇 · 〇 8 ms' which produces a continuous print line. On panels without RS A, the printed line extends approximately 200-300 microns; in other words, the ink extends over 3 ITO lines. This will result in an inexplicable color mixing in the actual printing process. On panels with printed RSA, the ink is completely enclosed in the area treated by the remote RSA and a high quality printing unit is obtained. Example 5 Example 5 illustrates the rS a treatment after formation of the first layer. The coating of material A was prepared as described above and thermally cured. These were then coated with ZONyl® TA-N RSA coating as described above. These RSA coatings receive a blanket exposure of up to about 4 J/cm 2 . After exposure, the coatings were washed in trifluorotoluene and the contact angle was measured using anisole. The phenyl ether ether contact angle was adjusted from about 9 degrees (surface of material A) to 40-45 degrees. If exposure is carried out in air or an inert atmosphere, no significant difference can be observed. Example 6 Example 6 illustrates the rs A treatment after formation of the first layer, wherein removal of the unexposed regions was carried out via sublimation. The coating of material A was prepared as described above and thermally cured. These are then coated with propionate eleven fluorododecyl vinegar; the RS A coating is applied by spin coating from a 3% by weight/volume solution stored in Quandeng 120197.doc -37-200841498. cloth. One of the rsa coatings was bonded to a blanket coating of about 1.5 J/cm2; the other coating was not exposed and exposed. The two coatings were baked in air on a hot plate at 195 ° C for 20 minutes and the contact angle was measured using anisole. The contact angle of the anisole in the RSA coating exposed to UV radiation was about 55 degrees. The contact angle of the nail is 10 degrees on a coating that is not exposed to UV radiation. This indicates that the legs that are not exposed to the shot can be removed by heating. If the RSA coating has been exposed to light in a pattern, heating '(10) retained in the exposed areas will have an angle of about 55 degrees, and the unexposed areas will have a contact of about 1 degree. angle. It should be understood that the above description is not necessarily to be construed as a More progress' (4) is held in the Iron Moon Book, which has been described with reference to specific examples. Change, this does not deviate from the following modifications and changes in the application of the patent, so the shore... The scope of the invention is broad. </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; What has been described herein with respect to specific embodiments and any achievable benefits, advantages, or problems are not to be construed as any more critical, essential, or essential. One of the scope of the patents is to be understood to be provided in combination in the sole-embodiments of the specific embodiments described herein in connection with the individual embodiments. Conversely, (4) the features described in connection with the prior art examples may be provided separately or in any sub-combination. Further, when a numerical value is recited in the range, it includes each individual value within the range. BRIEF DESCRIPTION OF THE DRAWINGS The embodiments are set forth in the Ik drawings to provide a better understanding of the concepts presented herein.

圖1包括繪示接觸角之圖。 圖2包括一有機電子裝置之圖解。 圖3包括一具有陽極線之基板的圖解。 圖4包括圖3之基板用緩衝材料塗佈的圖解。 圖5包括圖4之基板進一步用反應性表面活性組合物 的圖解。 ” 圖ό包括圖5之基板曝露及顯影後之圖解。 热習此項技術者應瞭解,附圖中之工件係出於簡單明晰 之目的而繪示,而未必按照比例尺繪製。舉例而古, I 口 有 助於更佳地理解實施例,附圖中某些工件之尺寸 於其他工件而誇大。 此相斜 【主要元件符號說明】 100 電子裝置 110 陽極層 120 電洞注入層或緩衝層 130 電洞傳輸層 140 光活性層 120197.doc -39- 200841498 150 可選電子傳輸層 160 陰極層 200 玻璃基板 210 ITO線之陣列 211 RSA覆蓋區 220 在玻璃上之材料A覆蓋區 230 在ITO上之材料A覆蓋區 120197.doc -40-Figure 1 includes a diagram depicting contact angles. Figure 2 includes an illustration of an organic electronic device. Figure 3 includes an illustration of a substrate having an anode line. 4 includes an illustration of the substrate of FIG. 3 coated with a buffer material. Figure 5 includes an illustration of a further reactive surface active composition of the substrate of Figure 4. The figure includes the illustration of the substrate after exposure and development of Figure 5. It should be understood by those skilled in the art that the workpieces in the drawings are drawn for the purpose of simplicity and clarity, and are not necessarily drawn to scale. Port I helps to better understand the embodiment, and the dimensions of some of the workpieces in the drawings are exaggerated for other workpieces. This phase is inclined [Main component symbol description] 100 Electronic device 110 Anode layer 120 Hole injection layer or buffer layer 130 Hole transport layer 140 photoactive layer 120197.doc -39- 200841498 150 optional electron transport layer 160 cathode layer 200 glass substrate 210 array of ITO lines 211 RSA footprint 220 material A on the glass A coverage area 230 on ITO Material A coverage area 120197.doc -40-

Claims (1)

200841498 十、申請專利範圍: 1 · 種用於在一第一 &gt; 匕# &amp; 層上形成一經圍包第二 方法包括: 万决’該 形成具有第一表面能之該第一層; 利用一反應性表面活性έ入 面活r生組合物處理該第-層以形成一 具有低於該第一表面銥主 战 lb之弟一表面能的經處理第一 其中該反應性表面活性組合物係 液體處3 使δ亥經處理第一層曝露於輻射,·及 形 成第 二層。 2. 如 請 求項 1之方法, 其中 種 氟化材料。 3· 如 請 求項 1之方法, 其中 種 可 輻射硬化材料。 4. 如 請 求項 1之方法, 其中 種 可 交聯 氟化表面活性劑 5. 如 請 求項 1之方法, 其中 該 第 /f 一起沈積。 6. 如 請 求項 1之方法, 其中 為 單 獨層 施加於該第 一層 7. 如 請 求項 1之方法, 其中 該 反 應性表面活性組合物 8. 如 請 求項 7之方法, 其進 性 組合物 之曝露或未 -曝露 9. 如 請 求項 8之方法, 其中 而 去 除。 120197.doc 200841498 二:求㈣之方法,其中該等區域係藉由加熱去除。 一:求項8之方法,其中該等區域係藉由使最外表面與 一吸收表面接觸以吸收或吸去較軟區域去除。 、 I2· —種製造一有 裝置方法,该有機電子裝置包括 ' 、一電極上之第一有機活性層及第二有機活性層, . 该方法包括: 曰 在该電極上形成具有第一表面能之第一有機活性層, • #用一反應性表面活性組合物處理該第-有機活;生層 以形成一經處理之第一有機活性層, θ J 吏該經處理第一有機活性層曝露於輻射,藉此 弟一表面能,及 - 形成該第二有機活性層。 13. —種有機電子裝置,其包括定位於一電極上之第— 活性層及第二有機活性層,且進一步在該第_有機=機 層與該第二有機活性層之間包括反應性表面 生 赢 物。 /性組合 120197.doc200841498 X. Patent application scope: 1 · A second method for forming a wrap around a first &gt;匕#&amp; layer includes: forming a first layer having a first surface energy; Treating the first layer with a reactive surface active intrusion surface active composition to form a treated first having the surface energy lower than the surface energy of the first surface, wherein the reactive surface active composition The liquid portion 3 exposes the first layer of the δ hai treatment to radiation, and forms a second layer. 2. The method of claim 1, wherein the fluorinated material. 3. The method of claim 1, wherein the radiation hardenable material is used. 4. The method of claim 1, wherein the fluorinated surfactant is cross-linkable. 5. The method of claim 1, wherein the /f is deposited together. 6. The method of claim 1, wherein a separate layer is applied to the first layer. 7. The method of claim 1, wherein the reactive surface active composition is 8. The method of claim 7, the initiating composition Exposure or non-exposure 9. The method of claim 8, wherein it is removed. 120197.doc 200841498 II: The method of (4), wherein the regions are removed by heating. A method of claim 8, wherein the regions are removed by absorbing or aspirating the softer regions by contacting the outermost surface with an absorbing surface. , I2. A device having a device, the organic electronic device comprising ', a first organic active layer on an electrode and a second organic active layer, the method comprising: forming a first surface energy on the electrode a first organic active layer, • a treatment of the first organic activity with a reactive surface active composition; a green layer to form a treated first organic active layer, θ J 吏 the treated first organic active layer is exposed Radiation, whereby a surface energy, and - formation of the second organic active layer. 13. An organic electronic device comprising a first active layer and a second organic active layer positioned on an electrode, and further comprising a reactive surface between the first organic layer and the second organic active layer Born to win. / Sex combination 120197.doc
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