200809973 (1) 九、發明說明 【發明所屬之技術領域】 本發明係關於，於使微波所產生的電漿進行作 半導體晶圓等施以處理時，所使用之微波導入裝置 處理裝置。 【先前技術】 近年來，隨著半導體製品的高密度化及高精細伯 半導體製品的製程中，於成膜、蝕刻、灰化等的各霍 時’乃具有採用電漿處理裝置之傾向。尤其是，就爾 O.lmTorr ( 13.3mPa)〜數 Torr (數百 Pa)的高真空 7 夠安定地生成高密度的電漿之優點來看，乃具有偏好 微波電漿裝置之傾向。如此之微波電漿處理裝置，例 日本特開平3 - 1 9 1 073號公報、日本特開平5 -3 43 3 3 4 報、日本特開平9-181052號公報、及日本特開 3 323 26號公報等所揭示者。 以下參照第6圖〜第8圖，簡單說明以往一般的 電漿處理裝置。第6圖係槪略地顯示電漿處理裝置的 之縱向剖面圖，第7圖係顯示第6圖所示之平面天縛 及慢波構件的中心部之擴大圖，第8圖係顯示第7圖 之慢波構件的中心部之立體圖。 如第6圖所不般，電黎處理裝置2係具備，可 空抽引之處理容器4 ;設置於處理容器4內之用以 導體晶圓W之載置台6 ;及與載置台6對向設置， 而對 電漿 :，於 【處理 〗使於 :亦能 :使用 丨如有 號公 2003 - 丨微波 丨構成 〖構件 I所示 【行真 $置半 .能夠 -5- (2) (2)200809973 以氣密方式封閉處理容器4之頂部的開口之圓板狀的頂板 8。頂板8係由可讓微波透射之材料，例如二氧化銘、氮 化鋁或石英所構成。於處理容器4的側壁，設置有用以將 特定的處理氣體導入至處理容器4內之氣體導入手段，例 如爲氣體噴嘴1 〇。於處理容器4的側壁，更設置有晶圓 W的搬出入用的開口 1 2，於此開口 1 2中設置有閘閥G。 於處理容器4的底部設置有排氣口 1 4，於此排氣口 1 4中 連接有真空排氣系統，並如上述般可對處理容器4內進行 真空抽引。 於頂板8的上側，設置有用以將電漿形成用的微波導 入至處理容器4內之微波導入裝置16。微波導入裝置16 係具備，設置於頂板8的上面之由厚度約爲數mm的銅圓 板所形成之平面天線構件1 8 ;及用以縮短平面天線構件 1 8的半徑方向之微波的波長之由電介質所構成的慢波構件 20。於平面天線構件1 8中，形成有由細長形貫通孔所構 成之多數個微波放射用槽孔22。一般而言，槽孔22係配 置爲同心圓狀或渦捲狀。此外，亦如第7圖及第8圖所示 般，於慢波構件20的上面中央部，設置有從該處往上方 突出之截頭圓錐形的供電部26。於供電部26上形成有貫 通孔2 8。 同軸導波管24的中心導體24A，係通過貫通孔28而 連接於平面天線構件18。同軸導波管24的外側導體24B ，係連接於覆蓋慢波構件2 0的全體之導波箱3 0的中央部 。由微波產生器32所產生之特定頻率數，例如爲 -6 - (3) (3)200809973 2.45GHz的微波，係於模式轉換器34中轉換爲特定的振 動模式，之後被導入至平面天線構件1 8及慢波構件20。 微波係以放射狀往平面天線構件1 8的半徑方向傳輸，於 該過程中，係從平面天線構件1 8中所設置之各個槽孔22 當中放射，並通過頂板8而導入至處理容器4內。藉由因 該微波於處理容器4內的處理空間S所產生之電漿，而對 半導體晶圓W施以蝕刻或成膜等之特定的電漿處理。於 導波箱30的上面，設置有用以冷卻因微波的介電損失而 導致發熱之慢波構件20之冷卻器36。 於此類的微波導入裝置1 6中，爲了儘可能地提高微 波的傳輸效率，眾所皆知的是必須儘可能地抑制反射波。 因此，即使於從同軸導波管24的下端部將微波導入至平 面天線構件1 8及慢波構件20之供電部26中，就微波的 反射抑制之觀點來看，於該處的特性阻抗之變化，較理想 爲儘可能地緩慢變化。因此，係如上述般將供電部26形 成爲截頭圓錐形狀。結果爲，特性阻抗例如於同軸導波管 24中爲50Ω，於供電部26與同軸導波管24的交界部分上 爲1 5 · 9Ω，隨著更往傳輸方向的下游側行進，乃依序從 7.4 Ω、之後爲1 · 5 Ω而緩慢變化。 由於作爲慢波構件20的材料而使用之電介質（具體 而言爲石英、或是氮化鋁或二氧化鋁等的陶瓷），其硬度 極高且較脆，因此非常難以於高加工精密度下予以加工。 高度H0爲3〜10mm之截頭圓錐形的供電部26之外周面的 錐面加工（硏磨加工），乃不易提高其加工精密度，該加 200809973 (4) 工精密度頂多約爲土0.5mm之相對較低的程度。因此，如 第7圖所示般，於供電部26之錐狀的側周面26A與導波 箱3 0的內面之間，經常會產生相對較大的間隙3 8。 起因於此間隙3 8，而會產生下列問題，亦即，微波的 ' 電場集中於此間隙3 8所導致之異常放電的產生，或是平 ^ 面天線構件1 8的電場分布失去對稱性之問題。此外，由 於間隙3 8不均一地產生，因而無法實現如設計値所設計 φ 之特性阻抗，亦會導致微波的反射率增大之問題。 再者，若產生間隙3 8，則從供電部2 6至導波箱3 0 ( 由冷卻器3 6予以冷卻）之熱傳導降低，亦可能導致供電 部26附近的冷卻效率降低之問題。 【發明內容】 本發明乃著眼於上述問題點，並爲了更能夠有效解決 此等問題點而創作出本發明。本發明之目的在於，藉由簡 ® 化慢波構件之供電部的形狀而提升加工時的尺寸精密度， 並藉此抑制成爲種種問題點的產生原因之供電部之間隙的 產生。 爲了達成上述目的，本發明係提供一種微波導入裝置 ，係具備：產生微波之微波產生器；及形成有微波放射用 的槽孔之平面天線構件；及具有中心導體及外側導體，並 將上述微波產生器所產生的微波傳送至上述平面天線構件 之同軸導波管；及爲與上述平面天線構件重疊而設置之平 板狀的慢波構件，且具有面對上述平面天線構件之第1面 -8 - (5)200809973[Technical Field] The present invention relates to a microwave introducing device processing apparatus used when a plasma generated by microwaves is subjected to a semiconductor wafer or the like. [Prior Art] In recent years, with the increase in the density of semiconductor products and the process of high-definition semiconductor products, there has been a tendency to use a plasma processing apparatus for film formation, etching, ashing, and the like. In particular, the high vacuum 7 of O.lmTorr (13. 3 mPa) to several Torr (hundreds of Pa) is sufficient to stably produce a high-density plasma, which has a tendency to favor a microwave plasma device. Such a microwave plasma processing apparatus, for example, Japanese Patent Laid-Open No. Hei 3 - 1 9 1 073, Japanese Patent Laid-Open No. Hei 5 - 3 43 3 3 4, Japanese Patent Laid-Open No. Hei 9-181052, and Japanese Patent Laid-Open No. 3 323-26 The person disclosed in the bulletin. Hereinafter, a conventional general plasma processing apparatus will be briefly described with reference to Figs. 6 to 8 . Fig. 6 is a longitudinal sectional view showing the plasma processing apparatus, and Fig. 7 is an enlarged view showing the center portion of the planar sky-binding and slow-wave member shown in Fig. 6, and Fig. 8 shows the seventh A perspective view of the center portion of the slow wave member of the figure. As shown in Fig. 6, the electric power processing apparatus 2 includes a processing container 4 that can be evacuated, a mounting table 6 for the conductor wafer W that is disposed in the processing container 4, and a mounting table 6 Set, and for the plasma:, in the [processing] to: can also: use the 丨 有 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2003 2) 200809973 The open disc-shaped top plate 8 of the open top of the processing container 4 is hermetically sealed. The top plate 8 is made of a material that allows microwave transmission, such as dioxin, aluminum nitride or quartz. A gas introduction means for introducing a specific processing gas into the processing container 4, for example, a gas nozzle 1 设置, is provided on the side wall of the processing container 4. In the side wall of the processing container 4, an opening 1 2 for carrying in and out of the wafer W is further provided, and a gate valve G is provided in the opening 1 2 . An exhaust port 14 is provided at the bottom of the processing container 4, and a vacuum exhaust system is connected to the exhaust port 14, and the inside of the processing container 4 can be vacuum-extracted as described above. On the upper side of the top plate 8, a microwave introducing device 16 for introducing microwaves for plasma formation into the processing container 4 is provided. The microwave introducing device 16 includes a planar antenna member 18 formed of a copper disk having a thickness of about several mm provided on the upper surface of the top plate 8, and a wavelength for shortening the microwave of the radial direction of the planar antenna member 18. A slow wave member 20 composed of a dielectric. In the planar antenna member 18, a plurality of microwave radiation slots 22 formed of elongated through holes are formed. In general, the slots 22 are configured to be concentric or spiral. Further, as shown in Figs. 7 and 8, a frusto-conical power supply portion 26 projecting upward from the upper portion of the slow wave member 20 is provided. A through hole 28 is formed in the power supply portion 26. The center conductor 24A of the coaxial waveguide 24 is connected to the planar antenna member 18 through the through hole 28. The outer conductor 24B of the coaxial waveguide 24 is connected to a central portion of the waveguide 30 that covers the entire slow-wave member 20. The specific frequency generated by the microwave generator 32, for example, -6 - (3) (3) 200809973 2.45 GHz microwave, is converted into a specific vibration mode in the mode converter 34, and then introduced into the planar antenna member. 18 and the slow wave member 20. The microwave system is radially radiated toward the radial direction of the planar antenna member 18, and is radiated from the respective slots 22 provided in the planar antenna member 18 in the process, and introduced into the processing container 4 through the top plate 8. . The semiconductor wafer W is subjected to a specific plasma treatment such as etching or film formation by the plasma generated by the microwave in the processing space S in the processing container 4. On the upper surface of the waveguide case 30, a cooler 36 for cooling the slow-wave member 20 which causes heat due to dielectric loss of the microwave is provided. In the microwave introducing device 16 of this type, in order to increase the transmission efficiency of the microwave as much as possible, it is known that the reflected wave must be suppressed as much as possible. Therefore, even if microwaves are introduced from the lower end portion of the coaxial waveguide 24 into the power feeding portion 26 of the planar antenna member 18 and the slow wave member 20, the characteristic impedance at that point is suppressed from the viewpoint of suppression of reflection of the microwave. Changes, ideally, change as slowly as possible. Therefore, the power supply portion 26 is formed into a frustoconical shape as described above. As a result, the characteristic impedance is, for example, 50 Ω in the coaxial waveguide 24, and is 1 5 · 9 Ω at the boundary portion between the power supply portion 26 and the coaxial waveguide 24, and proceeds in the direction of the downstream side of the transmission direction. 7.4 Ω, followed by 1 · 5 Ω and slowly changes. Since the dielectric used as the material of the slow wave member 20 (specifically, quartz or ceramic such as aluminum nitride or aluminum oxide) is extremely high in hardness and brittle, it is extremely difficult to be processed under high processing precision. Processed. The taper surface processing (honing processing) of the outer peripheral surface of the frustoconical power supply unit 26 having a height H0 of 3 to 10 mm is difficult to improve the processing precision, and the addition of the 200809973 (4) precision is about earth. A relatively low degree of 0.5 mm. Therefore, as shown in Fig. 7, a relatively large gap 38 is often generated between the tapered side peripheral surface 26A of the feeding portion 26 and the inner surface of the waveguide 30. Due to this gap 3 8, the following problem arises, that is, the electric field of the microwave concentrates on the abnormal discharge caused by the gap 38, or the electric field distribution of the planar antenna member 18 loses symmetry. problem. Further, since the gap 38 is unevenly generated, it is impossible to achieve the characteristic impedance of φ designed as designed, and the reflectance of the microwave is also increased. Further, if the gap 3 8 is generated, the heat conduction from the power supply portion 26 to the waveguide box 30 (cooled by the cooler 36) is lowered, which may cause a problem that the cooling efficiency in the vicinity of the power supply portion 26 is lowered. SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has been made in order to solve such problems more effectively. It is an object of the present invention to improve the dimensional precision during processing by simplifying the shape of the power supply portion of the slow wave member, and thereby suppressing the occurrence of a gap in the power supply portion which is a cause of various problems. In order to achieve the above object, the present invention provides a microwave introducing device comprising: a microwave generator for generating microwaves; and a planar antenna member formed with a slot for microwave radiation; and having a center conductor and an outer conductor, and the microwave a microwave generated by the generator is transmitted to the coaxial waveguide of the planar antenna member; and a flat wave member provided to overlap the planar antenna member, and having a first surface facing the planar antenna member -8 - (5)200809973
、及朝向與上述第1面爲相反方向之第2 面上形成有，由從該中心部所突出之突起 同軸導波管中供電之供電部之慢波構件； 通過上述供電部上所形成之貫通孔，而連 線構件的中心部；上述供電部具有垂直於 第2面之側壁。 上述慢波構件可由電介質所形成。 較理想爲，上述慢波構件之以上述第 述供電部的高度，係位於6.5〜13.0mm的 慢波構件由二氧化鋁所形成時，上述慢波 2面爲基準之上述供電部的高度， 6.5〜8.5mm的範圍內。此外，於上述慢波 形成時，上述慢波構件之以上述第2面爲 部的高度，較理想爲位於11〜13mm的範圍 上述慢波構件亦能夠以由導電性材料 予以覆蓋。此外，於上述導波箱中，可設 述慢波構件之冷卻手段。 上述微波的頻率數可設定爲2.45GHz 此外，根據本發明，係提供一種電漿 備：於頂部具有開口，且內部可進行真空 :及用以載置被處理體之設置於上述處理 :及以氣密方式安裝於上述開口，且由可 介質所構成之頂板；及將所需的處理氣體 Ρΐί 上 接 上 或 處 抽 容 讓 導 容器內之氣體導入手段；及爲了將微波導 ，於上述第2 構成且從上述 述中心導體係 於上述平面天 述慢波構件的 面爲基準之上 圍內。於上述 件之以上述第 理想爲位於 件係由石英所 準之上述供電 〇 構成之導波箱 有用以冷卻上 8.35GHz。 理裝置，係具 引之處理容器 器內的載置台 微波透射之電 入至上述處理 至上述處理容 -9 - 200809973 (6) 器內而設置於上述頂板的上方之申請專利範圍第1項所記 載之微波導入裝置。上述頂板與上述慢波構件可由相同材 料所形成。 【實施方式】 以下係參照附加圖式，說明本發明之微波導入裝置及 電漿處理裝置的一項實施例之型態。第1圖係顯示本發明 φ 之具備微波導入裝置之電漿處理裝置的一例之構成圖，第 2圖係顯示微波導入裝置的平面天線構件及慢波構件的中 心部之擴大圖，第3圖係顯示慢波構件的中心部之立體圖 〇 電漿處理裝置42係具備，該側壁及底壁由鋁等的導 體所構成之圓筒形的處理容器44。處理容器44的內部， 係區隔成圓柱形之密閉的處理空間S。處理容器44爲接 地。 • 於處理容器44內，收納有於其上面用以載置被處理 體，例如爲半導體晶圓W之圓板狀的載置台46。載置台 46係隔著由鋁所構成之支柱4 8而固定於容器底部。於處 理容器44的側壁，設置有用以對處理容器44的內部進行 晶圓W的搬出及搬入之搬出入口 50，於此搬出入口 50中 ，設置有能夠以氣密方式封閉該處之閘閥52。 於處理容器44中，設置有用以將必要的處理氣體導 入至該處理容器44內之氣體導入手段54。於本例中，此 氣體導入手段5 4具有貫通處理容器4 4的側壁之氣體噴嘴 -10- (7) 200809973 54A，並可因應必要，一邊控制流量一邊供應必要 氣體。此外，亦可設置多數個氣體噴嘴54A而將不 的氣體個別導入至處理容器44內。此外，氣體導 54亦可具有設置於處理容器44內的上部之所謂的 ，以取代上述方式。 於處理容器44的底壁上設置有排氣口 56。於 56中，係連接有依序中介連接壓力控制閥58及真 60之排氣路徑62，並可因應必要，對處理容器44 真空抽引至特定的壓力爲止。 於載置台46的下方，設置有於晶圓W的搬出 以使該晶圓W升降之多數根，例如爲3根的升降$ 於第1圖中僅表示出2根）。升降桿68係貫通處 44的底壁，爲了確保處理容器44內的氣密性，此 68係以可伸縮的風箱66所包圍。升降桿68係使 64升降。於載置台46上，形成有用以讓升降銷64 插銷通孔70。載置台46係由耐熱材料，例如爲二 等的陶瓷所形成。於載置台46內設置有加熱手段 熱手段72可由埋入於載置台46的大致爲全區之薄 的電阻加熱器所構成。加熱手段72係透過通過支柏 之配線74而連接於加熱器電源76。And a slow wave member formed by the power supply portion for supplying power from the protruding coaxial waveguide protruding from the center portion on the second surface facing the first surface opposite to the first surface; formed by the power supply portion a through hole and a center portion of the wire connecting member; the power feeding portion has a side wall perpendicular to the second surface. The slow wave member described above may be formed of a dielectric. Preferably, in the slow wave member, when the height of the power supply portion is 6.5 to 13.0 mm, the slow wave member is formed of alumina, and the height of the power supply portion based on the two sides of the slow wave is 6.5~8.5mm range. Further, in the formation of the slow wave, the height of the slow-wave member as the second surface is preferably in the range of 11 to 13 mm. The slow-wave member can also be covered with a conductive material. Further, in the above-described waveguide box, a cooling means for the slow wave member can be provided. The frequency of the above microwaves can be set to 2.45 GHz. Further, according to the present invention, there is provided a plasma preparation having an opening at the top and a vacuum inside: and a method for placing the object to be processed in the above treatment: a top plate that is attached to the opening and is made of a medium; and a gas introduction means for connecting the required process gas to or from the guide container; and for guiding the microwave, in the second The configuration is based on the surface of the planar waveguide system described above from the central guiding system. The above-described first preferred embodiment is a waveguide box formed of the above-mentioned power supply 所 which is made of quartz, for cooling 8.35 GHz. And a device for receiving the microwave transmission of the mounting table in the processing container to the processing of the above-mentioned processing to the above-mentioned processing device -9 - 200809973 (6), which is disposed above the top plate The described microwave introduction device. The above top plate and the above-mentioned slow wave member may be formed of the same material. [Embodiment] Hereinafter, an embodiment of a microwave introducing device and a plasma processing device according to the present invention will be described with reference to additional drawings. Fig. 1 is a block diagram showing an example of a plasma processing apparatus including a microwave introducing device of the present invention, and Fig. 2 is an enlarged view showing a central portion of a planar antenna member and a slow wave member of the microwave introducing device, Fig. 3 A three-dimensional drawing plasma processing apparatus 42 that displays a central portion of a slow-wave member includes a cylindrical processing container 44 in which the side wall and the bottom wall are made of a conductor such as aluminum. The interior of the processing vessel 44 is separated into a cylindrical closed processing space S. Processing vessel 44 is grounded. In the processing container 44, a mounting table 46 on which a substrate to be processed, for example, a disk-shaped semiconductor wafer W, is placed is placed. The mounting table 46 is fixed to the bottom of the container via a post 48 made of aluminum. The side wall of the container 44 is disposed, and a carry-out port 50 for carrying out and loading the wafer W into the inside of the processing container 44 is provided. The carry-out port 50 is provided with a gate valve 52 that can be sealed in an airtight manner. In the processing container 44, a gas introduction means 54 for introducing the necessary processing gas into the processing container 44 is provided. In the present example, the gas introduction means 504 has a gas nozzle -10- (7) 200809973 54A penetrating the side wall of the processing container 44, and can supply a necessary gas while controlling the flow rate as necessary. Further, a plurality of gas nozzles 54A may be provided to introduce the non-gas into the processing container 44 individually. Further, the gas guide 54 may have a so-called upper portion disposed in the processing container 44 instead of the above. An exhaust port 56 is provided on the bottom wall of the processing vessel 44. In Fig. 56, the pressure control valve 58 and the exhaust path 62 of the true 60 are connected in series, and the processing container 44 can be evacuated to a specific pressure as necessary. Below the mounting table 46, a plurality of lifts of the wafer W are carried out so that the wafer W is lifted and lowered, for example, three lifts are shown in FIG. 1 (only two are shown in the first figure). The lifting rod 68 is a bottom wall of the penetration portion 44, and the 68 is surrounded by a retractable wind box 66 in order to ensure airtightness in the processing container 44. The lifter 68 is raised and lowered 64. On the mounting table 46, a lift hole 64 is formed to allow the lift pin 64 to be inserted into the through hole 70. The mounting table 46 is formed of a heat resistant material such as a ceramic of the second class. The heating means is provided in the mounting table 46. The thermal means 72 can be constituted by a thin electric resistance heater which is embedded in the mounting base 46 and which is substantially the entire area. The heating means 72 is connected to the heater power source 76 through the wiring 74 of the cypress.
於載置台46的上面側，設置有薄板狀的靜電 80。靜電吸附盤80可構成爲於其內部具有配設爲 之導體線78。靜電吸附盤80可藉由靜電吸附力， 於載置台4 6上，亦即靜電吸附盤8 0上之晶圓W 的處理 同種類 入手段 蓮蓬頭 排氣口 空泵浦 內進行 入時用 § 64 ( 理容器 升降桿 升降銷 插通之 氧化鋁 72。加 板形狀 i 48內 吸附盤 網目狀 將載置 予以吸 -11 - (8) 200809973 附。靜電吸附盤8 0的導體線7 8，係透過配線8 2而連接於 用以將靜電吸附用的電壓施加於導體線78之直流電源84 。此外，爲了於必要時將特定頻率數，例如爲13·56ΜΗζ 之偏壓用高頻電力施加於靜電吸附盤8 0的導體線7 8，因 此於配線8 2中更連接有偏壓用高頻電源8 6。此外，可因 電漿處理裝置所執行之處理的種類之不同，而有省略此偏 壓用高頻電源8 6之情況。 # 處理容器44係於上端形成開口，此開口係隔著〇型 環等的密封構件90，藉由頂板8 8而以氣密方式予以封閉 。頂板8 8係由對微波具有透射性之材料，具體而言爲石 英、或是二氧化鋁（A12 Ο 3)或氮化銘（A1N)等陶瓷之電 介質等所構成。頂板8 8的厚度，在考量到耐壓性之下， 例如可形成爲大約20mm。 於頂板8 8的上面側，設置有本發明之微波導入裝置 92。微波導入裝置92係具有，用以將微波導入至處理容 ® 器4 4內之圓板狀的平面天線構件9 4。平面天線構件9 4的 下面係接觸於頂板8 8的上面。平面天線構件9 4係由導電 性材料，較理想爲表面施以銀鍍敷後之銅或是鋁所構成。 於此電紫處理裝置構成爲對3 0 0 m m大小的晶圓進行處理 時，平面天線構件94可形成爲直徑約400〜500mm、厚度 1〜數mm。於平面天線構件94中，形成有由細長形貫通孔 所構成之多數個微波放射用槽孔96。槽孔96可配置爲同 心圓狀、渦捲狀或放射狀。槽孔9 6亦可均一'地分布於平 面天線構件94的全面。此平面天線構件94爲所謂的稱爲 -12- 200809973 Ο) RLSA ( Radial Line Slot Antenna :輻射線槽孔天線 線’並可於高密度下將低電子能量的電漿形成於處 44內。 於平面天線構件94上，係於全體設置有薄圓 慢波構件9 8。慢波構件9 8的下面，亦即第1面， 於平面天線構件94。慢波構件98係由用以縮短微 長之高電介質材料所形成，例如可由石英、或是二 Φ 或氮化鋁等的陶瓷所形成。慢波構件98係覆蓋平 構件94的上面之大致爲全面。於慢波構件9 8的上 即第2面的中央部，形成有從該處往上方突出之圓 突起之形態的供電部100 (參照第3圖）。供電部 慢波構件98的上面爲基準，係具有高度H1。供電 之側壁1 00A的表面，並非如以往的供電部（參照^ )般之對慢波構件的上面呈傾斜之錐狀面，而是如彳 所示般，垂直於慢波構件的上面。 # 因此，可藉由硏磨加工等的機械加工而容易形 1 00A的形狀，因此能夠於高加工精密度下加工側璧 。具備附有錐面的外周面之以往的供電部（第8圖 號爲26 )的加工精密度約爲±〇.5 mm ’但根據本發 確認出垂直於慢波構件98的上面之具有側壁100A 部100的加工精密度，約爲士0.lmm。供電部100之 度Η 1，雖因構成慢波構件9 8之材料的不同而有所 但爲了抑制微波的反射率，可設定於6·5〜13.0mm 內。於供電部1 〇 〇中，形成有於該中心往上下方向 )之天 理容器 板狀的 係接觸 波的波 氧化鋁 面天線 面，亦 柱狀的 100以 部 100 赛8圖 赛3圖 成側壁 ：1 0 0 A 中的圖 明，乃 之供電 上述高 不同， 的範圍 貫通之 -13 -On the upper surface side of the mounting table 46, a thin plate-shaped static electricity 80 is provided. The electrostatic chuck 80 may be configured to have a conductor line 78 disposed therein. The electrostatic chuck 80 can be electrostatically adsorbed on the mounting table 46, that is, the processing of the wafer W on the electrostatic chuck 80, and the type of the inlet nozzle is used in the empty pump. (The container lifter lift pin is inserted into the alumina 72. The shape of the plate is increased by the shape of the plate in the i 48. The suction wire mesh will be placed and sucked -11 - (8) 200809973 Attached. The conductor wire of the electrostatic adsorption disk 80 is 7.8. It is connected to the DC power supply 84 for applying a voltage for electrostatic adsorption to the conductor line 78 through the wiring 82. Further, in order to apply a specific frequency, for example, a bias high frequency power of 13·56 施加 to The conductor wire 7 of the electrostatic chuck 80 is connected to the wiring 8 2, and the bias high frequency power source 86 is further connected. Further, the type of processing performed by the plasma processing apparatus may be omitted. The case where the biasing high-frequency power source 8 6 is used. # The processing container 44 is formed with an opening at the upper end, and the opening is sealed in a gastight manner by the top plate 8 8 via a sealing member 90 such as a 〇-shaped ring. 8 series of materials that are transparent to microwaves, In other words, it is made of quartz or a dielectric such as alumina (A12 Ο 3) or nitrite (A1N), etc. The thickness of the top plate 8 8 can be formed, for example, in consideration of pressure resistance. 20mm. On the upper side of the top plate 8 8 , a microwave introducing device 92 of the present invention is provided. The microwave introducing device 92 has a disk-shaped planar antenna member 9 for introducing microwaves into the processing container 4 4 . The lower surface of the planar antenna member 94 is in contact with the upper surface of the top plate 88. The planar antenna member 94 is made of a conductive material, preferably a surface coated with copper or aluminum after silver plating. When the processing apparatus is configured to process a wafer having a size of 300 mm, the planar antenna member 94 can be formed to have a diameter of about 400 to 500 mm and a thickness of 1 to several mm. In the planar antenna member 94, an elongated through hole is formed. A plurality of slots 96 for microwave radiation are formed. The slots 96 may be arranged concentrically, in a spiral shape or in a radial shape. The slots 96 may also be uniformly distributed throughout the planar antenna member 94. Member 94 is called -12-200809973 Ο RLSA (radiial Line Slot Antenna) and can form a plasma of low electron energy at a high density in the portion 44. On the planar antenna member 94, a thin circular slow wave is disposed in the whole Member 98. The lower surface of the slow wave member 98, that is, the first surface, is the planar antenna member 94. The slow wave member 98 is formed of a high dielectric material for shortening the micro length, for example, quartz or two Φ. It is formed of a ceramic such as aluminum nitride, and the slow wave member 98 covers substantially the entire upper surface of the flat member 94. The power supply unit 100 (see Fig. 3) in the form of a circular protrusion that protrudes upward from the upper portion of the slow wave member 98 is formed in the center portion of the second surface. Power Supply Unit The upper surface of the slow wave member 98 has a height H1 as a reference. The surface of the side wall 1 00A of the power supply is not perpendicular to the upper surface of the slow wave member as shown by 彳, as shown by the conventional power supply unit (see ^). # Therefore, it is easy to shape the shape of 00A by machining such as honing, so that the side boring can be processed with high machining precision. The conventional power supply unit (No. 8 is 26) having a tapered outer peripheral surface has a machining precision of about ± 0.5 mm. However, according to the present invention, it is confirmed that the upper surface of the slow wave member 98 has a side wall. The machining precision of the 100A part 100 is about 0.1 mm. The degree Η1 of the power supply unit 100 is different depending on the material constituting the slow wave member 9.8, but it can be set within 6·5 to 13.0 mm in order to suppress the reflectance of the microwave. In the power supply unit 1 ,, the aluminum oxide antenna surface of the solar contact vessel plate-shaped contact wave is formed in the vertical direction of the center, and the column 100 is also formed into a side wall by the part 100 :1 0 0 A in the figure, is the power supply above the above high, the range is through the-13 -
200809973 do) 貫通孔102。貫通孔102的下部，愈接近於下端貝 擴徑。慢波構件9 8的材料，就考量到微波的波長 果’可使用與頂板8 8相同的材料。 由導體所構成之薄型圓筒形狀的導波箱〗0 4， 慢波構件9 8的上面及側面的全部。平面天線構件 成導波箱1 04的底板。於導波箱〗〇4的上面，設濯 進行冷卻而使冷煤流通之作爲冷卻手段的冷卻夾套 導波箱104及平面天線構件94的周邊部，赶 處理容器4 4。於供電部1 〇 〇中，連接有同軸導波， 同軸導波管1 0 8係由，中心導體！ 〇 8 a ;及隔著转 而配置於該周圍之剖面呈圓形的外側導體1 〇 8 B戶f 外側導體1 08B係連接於導波箱〗04上部的中央咅丨 導體1 08A係通過慢波構件98中心的貫通孔1 02而 平面天線構件9 4的中心部。 於高加工精密度下進行加工後之圓柱狀突起纪 供電部100的側壁100A，係緊密接觸於外側導體 內壁面。同軸導波管108係隔著模式轉換器1 10万 途具有匹配器（圖中未顯示）之矩形導波管112, 於2.4 5 GHz的微波產生器114，並將微波傳輸至耳 構件94及慢波構件98。微波的頻率數並不 2.45GHz，亦可爲其他頻率數，例如爲8.35GHz。 電漿處理裝置42全體的動作，係藉由以微霄 構成之控制手段1 1 6予以控制。進行此動作之電朋 ，係記憶於軟碟、CD (Compact Disc:光碟）或杉 J愈予以 :縮短效 係覆蓋 94係形 【有用以 106° J導通於 r 108 ° i定間隔 :構成。 ;，中心 丨連接於 f形態之 108B 的 .於該中 而連接 :面天線 限定於 :腦等所 i的程式 :閃記憶 -14- 200809973 (11) 體等之記憶媒體11 8。藉由來自於此控制手段11 6的指令 ，而進行各種處理氣體的供應及流量控制、微波及高頻的 供應及電力控制、以及製程溫度及製程壓力的控制。 接下來說明以電漿處理裝置42所執行之處理方法的 一例。首先開啓閘閥5 2，藉由搬送臂（圖中未顯示），透 ’ 過搬出入口 50將半導體晶圓W收納至處理容器44內， 使升降銷64上下移動而藉此將晶圓W載置於載置台46 # 的載置面，之後藉由靜電吸附盤80將晶圓W予以吸附。 此晶圓W可因應必要，藉由加熱手段72而維持於特定的 製程溫度中。從圖中未顯示的氣體源當中，一邊控制流量 ，一邊透過氣體導入手段54的氣體噴嘴54Α將特定的處 理氣體供應至處理容器44內，並控制壓力控制閥5 8以將 處理容器44內維持於特定的製程壓力。 同時藉由驅動微波導入裝置92的微波產生器114，將 此微波產生器1 1 4所產生的微波，透過矩形導波管1 1 2及 ® 同軸導波管108而從供電部100供應至平面天線構件94 及慢波構件98。藉由慢波構件98而縮短波長後的微波， 係透射頂板8 8而導入至處理空間S，藉此於處理空間S 中產生電漿，並使用此電漿進行特定的處理。 在此，係詳細說明從同軸導波管1 08的下端部將微波 予以傳輸之情況。於同軸導波管1 08中傳輸來的微波，係 通過慢波構件9 8的中央部上所設置之供電部1 00，並以放 射狀朝向慢波構件98及平面天線構件94的周邊部傳輸。 於此過程中，微波係從各個槽孔96朝向下方的處理空間 -15- 200809973 (12) S放射，而導入至處理容器44內。 如上述般，根據本發明之具有嶄新形狀的供電部1 00 ，由於能夠於高加工精密度下予以加工，因此可在不會產 生間隙下，嵌入於同軸導波管1 〇 8之外側導體1 0 8 B的下 * 端部。因此可防止起因於該間隙而於供電部1 〇〇與外側導 ' 體108B之間產生異常放電之問題，並且可防止平面天線 構件94的電場分布失去對稱性之問題。 φ 此外，由於不會產生間隙，因此可實現如設計値所設 計之特性阻抗，藉此可抑制供電部1 〇〇及其附近之微波的 反射。再者，於將冷卻手段106設置於同軸導波管108時 ，由於可將供電部100與同軸導波管108的內壁面予以密 接，因此可改善兩構件間的熱傳導性，而提升供電部1 〇〇 的冷卻效率。 惟若將供電部100構成爲圓柱形，則較將供電部1〇〇 構成爲截頭圓錐形的情況（參照第7圖及第8圖），可能 # 更會導致特性阻抗的急遽變化，而增大微波的反射率。然 而，此問題可藉由使供電部100的高度H1達到最適化而 予以解決。 最適化的高度H1，於慢波構件98及供電部100的材 料爲相對介電常數約 9.8之二氧化鋁時，係位於 6.5〜8.5mm的範圍內，於相對介電常數約3.8之石英時， 係位於1 1〜13 mm的範圍內。藉由如此般使供電部100的 高度H1達到最適化，可抑制微波的反射率的增大，而抑 制在5 %以下。 -16 - (13) (13)200809973 <特性阻抗的變化與反射率> 接下來參照第4圖及第5圖，說明供電部1 〇〇的高度 Η 1的最適化之探討結果。第4圖係顯示成爲特性阻抗的 計算基礎之慢波構件的中心部之模型，第5圖係顯示慢波 構件之供電部的高度與微波的反射率之間的關係之圖式。 於本模型中，微波的頻率數係設定爲2.45GHz，但頻率數 並不限定於此。 第4圖（A )係顯示以往技術之慢波構件的供電部周 圍之模型，第4圖（B)係顯示本發明之慢波構件的供電 部周圍之模型。 在此係根據下列前提而進行計算。 慢波構件的材料：二氧化鋁（相對介電常數9.8 ) 慢波構件的厚度d : 4mm 供電部之貫通孔的半徑dl : 8.45mm 供電部的半徑d2 : 1 9.4mm 同軸導波管的特性阻抗：5 0Ω 供電部的高度H0 (以往技術）：6mm 供電部的高度HI (本發明）：8mm 特性阻抗係由下列式子所求取。 Z = V/I = 60d/ ( W〇 r :從慢波構件的中心之距離 ε :相對介電常數 於第4圖（A )所示之以往的慢波構件時，特性阻抗 -17- 200809973 (14) 於同軸導波管與供電部的交界上爲1 5 · 9 Ω，於包含供電部 外周的終端點之斜向剖面上爲1 0Ω ’於包含供電部外周的 終端點之上下剖面上爲3.9 5 Ω。此時之微波的反射率爲 3.6%，而確認出可較以往技術的4· 5%大幅降低。 在此，於第4圖（Β )所示之本發明之慢波構件的模 * 型中，係針對微波的反射率對供電部高度Η1之依存性進 行探討。第5圖（A )係顯示其結果。如第5圖（A )所 Φ 示般，於供電部的高度H1爲6〜9mm的範圍內，微波的反 射呈現出向下凹的曲線，於高度Η 1爲8mm時，係呈現出 反射率的最低値之大約3.5。在此，若以反射率的容許限 度（上限）爲 5%，則確認出可藉由將高度Η1設定爲 6· 5〜8.5mm的範圍內，而將反射率控制在上述容許限度內 。此外，於以反射率的容許限度爲4%時，係確認出可藉 由將高度H1設定爲7.0〜8.1mm的範圍內，而將反射率控 制在上述容許限度內。 ^ 接下來讓使用依據本發明之形狀，且具有高度HI爲 8mm的供電部1〇〇之慢波構件之電漿處理裝置實際進行運 轉’而確認出所產生之電漿的狀態。亦即藉由目視方式確 認出，即使於1 000〜3 5 00瓦的範圍內改變微波功率，並於 50〜200mTorr的範圍內改變處理容器內的壓力，亦能夠安 定地形成電漿。 將慢波構件的材料從二氧化鋁改變爲石英，並進行與 上述相同之探討。第5圖（B )係顯示此時之供電部的高 度Η 1與反射率之間的關係。在此，由石英所構成之慢波 -18- 200809973 (15) 構件的厚度d爲7mm，石英的相對介電常數ε爲3 · 8。從 第5圖（Β )當中可得知，爲了使微波的反射率到達5 %以 下’只要將局度Η1設定爲11·〇〜13.0mm的範圍內即可。 此外，氮化鋁（A1N)的相對介電常數爲8.0，與二氧化鋁 大致相同，因此，於慢波構件的材料爲氮化鋁時，亦可將 * 對二氧化鋁所求取的上述尺寸予以適用。 上述電漿處理裝置的構成，僅顯示出一項例子而不限 # 定於此。此外，慢波構件9 8的材質及相對介電常數，亦 僅顯示出一項例子而不限定於此。尤其是，供電部1 〇 〇的 高度Η 1，當然較理想爲因應所使用之材料的相對介電常 數而達到最適化。此外，以電漿處理裝置所處理之被處理 體，並不限定於半導體晶圓，亦可爲玻璃基板、LCD基板 、陶瓷基板等之其他種類的被處理體。 【圖式簡單說明】 • 第1圖係槪略地顯示本發明的一項實施型態之具備微 波導入裝置之電漿處理裝置的構成之縱向剖面圖。 _ 第2圖係顯示第1圖所示之微波導入裝置的平面天線 構件及慢波構件的中心部之擴大圖。 第3圖係顯示第2圖所示之慢波構件的中心部之立體 圖。 第4圖係顯示於求取特性阻抗時所使用之慢波構件的 中心部的各部分尺寸之模型圖。 第5圖係顯示慢波構件之供電部的高度與微波的反射 -19- 200809973 (16) 率之間的關係之圖式。 第6圖係槪略地顯示以往的電漿處理裝置的構成之縱 向剖面圖。 第7圖係顯示第6圖之電漿處理裝置的平面天線構件 及慢波構件的中心部之擴大圖。 ' 第8圖係顯示第7圖所示之慢波構件的中心部之立體 圖。 【主要元件符號說明】 2、42 :電漿處理裝置 4、44 :處理容器 6、46 :載置台 8、8 8 :頂板 1〇、54 :氣體導入手段 12 :開口 # 14、56 :排氣口 16、92 :微波導入裝置 18、94 :平面天線構件 2〇、98 :慢波構件 22、96 :槽孔 2 4、1 0 8 :同軸導波管 2 4 A、1 0 8 A :中心導體 24B、108B :外側導體 26 Μ共電部 -20- (17) 200809973 26A :側周面 28、102 :貫通孔 30、104 :導波箱 32、114:微波產生器 34、110 :模式轉換器 。 3 6 :冷卻器 3 8 :間隙 • 4 8 :支柱 50 :搬出入口 54A :氣體噴嘴 5 8 :壓力控制閥 60 :真空泵浦 62 :排氣路徑 64 :升降銷 66 :風箱 • 68 :升降桿 7 〇 :插銷通孔 72 :加熱手段 74 、 82 :配線 76 :加熱器電源 78 :導體線 80 :靜電吸附盤 84 :直流電源 86 :偏壓用高頻電源 -21 (18) (18)200809973 90 :密封構件 100 :供電部 100A :側壁 1 0 6 :冷卻夾套 1 1 2 :矩形導波管 1 1 6 :控制手段 1 1 8 :記憶媒體 G、5 2 :閘閥 S :處理空間 W :半導體晶圓200809973 do) Through hole 102. The lower portion of the through hole 102 is closer to the lower end. The material of the slow wave member 98 can be measured to the wavelength of the microwave, and the same material as the top plate 8 8 can be used. A thin cylindrical waveguide box composed of a conductor, all of the upper surface and the side surface of the slow wave member 98. The planar antenna member serves as the bottom plate of the waveguide box 104. On the upper surface of the waveguide box 〇4, the cooling jacket is used to cool the coal, and the cooling jacket, the waveguide box 104, and the peripheral portion of the planar antenna member 94 are used as cooling means to process the container 44. In the power supply unit 1 〇 ,, a coaxial guided wave is connected, and the coaxial waveguide 1 8 8 is the center conductor! 〇8 a ; and the outer conductor 1 having a circular cross section disposed around the circumference of the turn B8 B household f outer conductor 1 08B is connected to the central 咅丨 conductor 1 08A of the upper portion of the waveguide box -04 The through hole 102 in the center of the wave member 98 and the central portion of the planar antenna member 94. The side wall 100A of the cylindrical projection power supply unit 100 which is processed under high machining precision is in close contact with the inner wall surface of the outer conductor. The coaxial waveguide 108 is a rectangular waveguide 112 having a matching device (not shown) via a mode converter 1100, a microwave generator 114 at 2.4 5 GHz, and transmits the microwave to the ear member 94 and Slow wave member 98. The frequency of the microwave is not 2.45 GHz, and may be other frequency numbers, for example, 8.35 GHz. The operation of the entire plasma processing apparatus 42 is controlled by a control means 1 16 composed of micro enthalpy. The e-friends who perform this action are memorized in a floppy disk, CD (Compact Disc) or cedar J: The shortening effect covers the 94 series [uses 106° J to conduct at r 108 ° i. ;, Center 丨 is connected to 108B of f form. Connected in this: The antenna is limited to: the program of the brain, etc.: Flash memory -14- 200809973 (11) Memory media of the body 11 8 . By the command from this control means 116, various processing gas supply and flow rate control, microwave and high frequency supply and power control, and process temperature and process pressure control are performed. Next, an example of a processing method executed by the plasma processing apparatus 42 will be described. First, the gate valve 52 is opened, and the semiconductor wafer W is stored in the processing container 44 through the transfer port 50 by the transfer arm (not shown), and the lift pin 64 is moved up and down to mount the wafer W. The wafer W is adsorbed by the electrostatic chuck 80 after the mounting surface of the mounting table 46 #. This wafer W can be maintained at a particular process temperature by heating means 72 as necessary. From the gas source not shown in the figure, while controlling the flow rate, a specific processing gas is supplied into the processing container 44 through the gas nozzle 54 of the gas introducing means 54, and the pressure control valve 58 is controlled to maintain the inside of the processing container 44. For specific process pressures. At the same time, the microwave generated by the microwave generator 1 14 is supplied to the plane from the power supply unit 100 through the rectangular waveguide 1 1 2 and the coaxial waveguide 108 by the microwave generator 114 that drives the microwave introduction device 92. The antenna member 94 and the slow wave member 98. The microwave having the wavelength shortened by the slow wave member 98 is transmitted to the processing space S by the transmission of the top plate 88, whereby plasma is generated in the processing space S, and the plasma is used for specific processing. Here, the case where the microwave is transmitted from the lower end portion of the coaxial waveguide 810 will be described in detail. The microwaves transmitted from the coaxial waveguide 810 are transmitted through the power supply unit 100 provided on the central portion of the slow wave member 98, and are radially transmitted toward the slow wave member 98 and the peripheral portion of the planar antenna member 94. . In this process, the microwave system is radiated from the respective slots 96 toward the lower processing space -15-200809973 (12) S, and introduced into the processing container 44. As described above, according to the present invention, the power supply unit 100 having a new shape can be processed under high machining precision, so that it can be embedded in the outer conductor 1 of the coaxial waveguide 1 〇8 without generating a gap. 0 8 B's lower * end. Therefore, it is possible to prevent the problem of abnormal discharge occurring between the power supply portion 1A and the outer guide body 108B due to the gap, and it is possible to prevent the problem that the electric field distribution of the planar antenna member 94 loses symmetry. φ Further, since no gap is generated, the characteristic impedance designed as in the design can be realized, whereby the reflection of the microwave of the power supply unit 1 and its vicinity can be suppressed. Further, when the cooling means 106 is provided in the coaxial waveguide 108, since the power supply unit 100 and the inner wall surface of the coaxial waveguide 108 can be closely contacted, the thermal conductivity between the two members can be improved, and the power supply unit 1 can be improved. The cooling efficiency of the crucible. However, when the power supply unit 100 is formed in a cylindrical shape, the power supply unit 1 is configured to be frustoconical (see FIGS. 7 and 8), and the # may cause a sharp change in the characteristic impedance. Increase the reflectivity of the microwave. However, this problem can be solved by optimizing the height H1 of the power supply unit 100. The optimum height H1 is in the range of 6.5 to 8.5 mm when the material of the slow wave member 98 and the power supply unit 100 is a relative dielectric constant of about 9.8 Å, and is about a quartz having a relative dielectric constant of about 3.8. , is located in the range of 1 1~13 mm. By optimizing the height H1 of the power supply unit 100 in this manner, it is possible to suppress an increase in the reflectance of the microwave, and it is suppressed to 5% or less. -16 - (13) (13) 200809973 <Change in characteristic impedance and reflectance> Next, the results of the optimization of the height Η 1 of the power supply unit 1 说明 will be described with reference to Figs. 4 and 5 . Fig. 4 is a view showing a model of a central portion of a slow wave member which is a basis for calculation of a characteristic impedance, and Fig. 5 is a view showing a relationship between a height of a power supply portion of a slow wave member and a reflectance of microwave. In the present model, the frequency of the microwave is set to 2.45 GHz, but the number of frequencies is not limited to this. Fig. 4(A) shows a model around the power supply unit of the conventional slow wave member, and Fig. 4(B) shows a model around the power supply unit of the slow wave member of the present invention. This is calculated based on the following premise. Material of the slow wave member: alumina (relative dielectric constant 9.8) thickness of the slow wave member d: 4 mm radius of the through hole of the power supply portion dl: 8.45 mm radius of the power supply portion d2: 1 9.4 mm characteristics of the coaxial waveguide Impedance: 50 Ω Height H0 of the power supply unit (Prior Art): 6 mm Height of the power supply unit HI (Invention): 8 mm The characteristic impedance is obtained by the following equation. Z = V / I = 60d / ( W〇r : distance from the center of the slow wave member ε : relative dielectric constant in the conventional slow wave member shown in Fig. 4 (A), characteristic impedance -17- 200809973 (14) At the boundary between the coaxial waveguide and the power supply unit, it is 1 5 · 9 Ω, and the diagonal section of the terminal point including the outer periphery of the power supply unit is 10 Ω ' on the lower cross section of the terminal point including the outer periphery of the power supply unit. It is 3.9 5 Ω. The reflectance of the microwave at this time is 3.6%, and it is confirmed that it can be greatly reduced by 4.5% compared with the prior art. Here, the slow wave member of the present invention shown in Fig. 4 (Β) In the mold type, the dependence of the reflectivity of the microwave on the height Η1 of the power supply unit is discussed. Fig. 5(A) shows the result. As shown in Fig. 5(A), in the power supply unit. In the range where the height H1 is 6 to 9 mm, the reflection of the microwave exhibits a downward concave curve, and when the height Η 1 is 8 mm, the lowest reflectance of the reflectance is about 3.5. Here, the allowable limit of the reflectance is used. (Upper limit) is 5%, it is confirmed that the reflectance can be controlled by setting the height Η1 to a range of 6.5 to 8.5 mm. In addition, when the allowable limit of the reflectance is 4%, it is confirmed that the reflectance can be controlled within the above tolerance by setting the height H1 to a range of 7.0 to 8.1 mm. Next, the plasma processing apparatus of the slow-wave member having the shape of the present invention having a height HI of 8 mm is actually operated, and the state of the generated plasma is confirmed by visual observation. The method confirmed that even if the microwave power was changed in the range of 1 000 to 3 50,000 watts and the pressure in the processing container was changed within the range of 50 to 200 mTorr, the plasma could be stably formed. The dialumina is changed to quartz, and the same discussion as above is carried out. Fig. 5(B) shows the relationship between the height Η 1 of the power supply portion and the reflectance at this time. Here, the slow wave composed of quartz -18- 200809973 (15) The thickness d of the member is 7 mm, and the relative dielectric constant ε of quartz is 3 · 8. As can be seen from Fig. 5 (Β), in order to make the reflectance of the microwave reach 5% or less 'as long as Set the degree Η1 to 11·〇~13. In addition, aluminum nitride (A1N) has a relative dielectric constant of 8.0, which is substantially the same as that of alumina. Therefore, when the material of the slow-wave member is aluminum nitride, *2 The above-described dimensions obtained by the alumina are applied. The configuration of the plasma processing apparatus is merely an example and is not limited thereto. Further, the material and relative dielectric constant of the slow wave member 98 are only An example is shown without limitation. In particular, the height Η 1 of the power supply unit 1 当然 is preferably optimized to match the relative dielectric constant of the material used. Further, the object to be processed which is processed by the plasma processing apparatus is not limited to the semiconductor wafer, and may be another type of object to be processed such as a glass substrate, an LCD substrate or a ceramic substrate. [Brief Description of the Drawings] Fig. 1 is a longitudinal cross-sectional view showing a configuration of a plasma processing apparatus equipped with a microwave introducing device according to an embodiment of the present invention. Fig. 2 is an enlarged view showing a central portion of a planar antenna member and a slow wave member of the microwave introducing device shown in Fig. 1. Fig. 3 is a perspective view showing the center portion of the slow wave member shown in Fig. 2. Fig. 4 is a model diagram showing the dimensions of the respective portions of the center portion of the slow wave member used in obtaining the characteristic impedance. Fig. 5 is a diagram showing the relationship between the height of the power supply portion of the slow wave member and the reflection of the microwave -19-200809973 (16). Fig. 6 is a longitudinal sectional view showing a schematic configuration of a conventional plasma processing apparatus. Fig. 7 is an enlarged view showing the center portion of the planar antenna member and the slow wave member of the plasma processing apparatus of Fig. 6. Fig. 8 is a perspective view showing the center portion of the slow wave member shown in Fig. 7. [Description of main component symbols] 2, 42: plasma processing apparatus 4, 44: processing container 6, 46: mounting table 8, 8 8: top plate 1 〇, 54: gas introduction means 12: opening # 14, 56: exhaust Ports 16, 92: Microwave introducing devices 18, 94: Planar antenna members 2, 98: Slow wave members 22, 96: Slots 2 4, 1 0 8 : Coaxial waveguides 2 4 A, 1 0 8 A: Center Conductor 24B, 108B: Outer conductor 26 Μ Common electric part -20- (17) 200809973 26A: Side peripheral surface 28, 102: Through hole 30, 104: Guide box 32, 114: Microwave generator 34, 110: Mode conversion Device. 3 6 : Cooler 3 8 : Clearance • 4 8 : Pillar 50 : Carry-out inlet 54A : Gas nozzle 5 8 : Pressure control valve 60 : Vacuum pump 62 : Exhaust path 64 : Lift pin 66 : Bellows • 68 : Lifting rod 7 〇: bolt through hole 72: heating means 74, 82: wiring 76: heater power supply 78: conductor line 80: electrostatic adsorption disk 84: DC power supply 86: bias high frequency power supply-21 (18) (18) 200809973 90: sealing member 100: power supply unit 100A: side wall 1 0 6 : cooling jacket 1 1 2 : rectangular waveguide 1 1 6 : control means 1 1 8 : memory medium G, 5 2 : gate valve S: processing space W: Semiconductor wafer
-22-twenty two