TW200809209A - Probe card and glass substrate drilling method - Google Patents
Probe card and glass substrate drilling method Download PDFInfo
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- TW200809209A TW200809209A TW96113702A TW96113702A TW200809209A TW 200809209 A TW200809209 A TW 200809209A TW 96113702 A TW96113702 A TW 96113702A TW 96113702 A TW96113702 A TW 96113702A TW 200809209 A TW200809209 A TW 200809209A
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- glass substrate
- hole
- mold
- opening
- guide hole
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07314—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support
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- General Physics & Mathematics (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
200809209 九、發明說明: 【發明所屬之技術領域】 本發明係關係探針卡及玻璃基板開孔方法。 .【先前技術】 例如形成於半導體晶圓上之IC、LSI等電子電路之 特性之檢查係利用安裝於探針裝置之探針卡執行H 可探針型之探針+A目士+ 斤明灰 或稱A^ 持多數針狀之探針之連接器200809209 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a probe card and a glass substrate opening method. [Prior Art] For example, the inspection of the characteristics of an electronic circuit such as an IC or an LSI formed on a semiconductor wafer is performed by using a probe card mounted on the probe device to execute a probe capable of a probe type + A mesh + jinming Gray or A2 connector with a majority of needle-like probes
- ’"、板之支持板、及與該支持板電性連接之電路美 板。。支持板係被配置成使探針之前端接觸部突出之下面: 日。曰圓相對向,電路基板係被重疊配置於支持板之上面。晶 2之兀件之電氣特性之檢查係使複數探針之前端接觸部- '", the board's support board, and the circuit board that is electrically connected to the board. . The support plate is configured such that the front end of the probe protrudes below the surface: day. The rounded surfaces are opposed to each other, and the circuit board is placed on top of the support plate. The electrical characteristics of the element of the crystal 2 are checked at the front end of the complex probe.
接觸於元件之雷;發A 電子電路之電極,透過電路基板由 該電極施加檢杳用夕雪A^ 木t對 一用之電乳^號所執行。探針係向上下方向 滑動、:如地被收容於形成在支持板之導孔之中。而,二 在‘孔之水平剖面形狀為圓形(專利文獻丨)。 專利文獻i·日本特開2⑽4-1 56969號公報 【發明内容】 •明所欲解決之問題 但’導孔之水平剖面形狀為圓形日夺,不能符合近年來之 南積體化元件需要。即,導孔之形狀㈣料,欲窄化孔 f孔之間隙之情形,在微細孔之情形,不管孔之直徑是大 疋小,’、在開孔加工上最低限所需要之圓孔與圓孔間之隔牆 之間隙都不變’故必須將孔之直徑極端地縮小。但,開孔 加工與波可探針之小型化有其極限,又欲符合高積體化而 120334.doc 200809209 縮小鄰接之探針間之間距,也有其㈣。 而且’雖適合於將.使用作為彈 圓形之導孔内,伸全♦合太具士之螺方疋舞黃收容於 弱之檢查信號而言,並不理相b 曰大對^ 並不理想,且不利於精細之測定。另 夕,在谷易感染周邊雜訊之問 η 失。為防止該等問題,在構、止上ϋΛ 認的缺 碡在構以上會使波可探針大型化, 能符合高積體化需要。The lightning contact with the component; the electrode of the A-electronic circuit is applied to the circuit substrate through the circuit substrate, and the inspection is performed by using the electric snow. The probe slides in the up and down direction, and is housed in a guide hole formed in the support plate. However, the shape of the horizontal cross section of the hole is circular (Patent Document 丨). [Problem to be Solved] However, the horizontal cross-sectional shape of the guide hole is a rounded shape, which cannot meet the needs of the conventional integrated components in recent years. That is, the shape of the guide hole (four) material, to narrow the gap of the hole of the hole f, in the case of the micro hole, regardless of the diameter of the hole is large and small, ', the minimum hole required for the hole processing and The gap between the partitions of the round holes is constant, so the diameter of the holes must be extremely narrowed. However, the miniaturization of the aperture processing and the wave probe has its limits, and it is also desirable to conform to the high integration. 120334.doc 200809209 Reduces the distance between adjacent probes, and also has (4). And 'Although it is suitable for use as a guide hole in the round shape, the extension of the ♦ 太 之 之 疋 疋 收容 收容 收容 收容 收容 收容 收容 收容 收容 收容 收容 收容 收容 收容 收容 收容 收容 收容 收容 收容 收容 收容 收容 收容Ideal and not conducive to fine determination. On the other hand, in the valley easy to infect the surrounding noise η lost. In order to prevent such problems, the lack of recognition on the structure and the structure will increase the size of the wave probe and meet the needs of high integration.
本發明係齡此輯研發而成,其目的在於:在探針卡 之同-區域之支持板中,以窄於以往之間距之高的位置精 度$成可收谷%針之導孔’而精細地施行高積體化元件之 檢查。 解決問題之技術手段 為達成前述目的,本發明之特徵在於探針卡係包含電路 基板及配置於該電路基板之下而支持探針之支持板,用於 檢查被檢查體之電氣特性之探針卡,且在形成於前述支持 板之導孔内插入有探針,該探針之前端突出於前述支持板 下方别述導孔係並排具有複數之前述探針之插入部。 如此’由於在一個導孔設有插入複數探針之複數插入 部’故本發明之探針卡可以比以往具有圓形導孔之探針卡 更窄之間距配置探針。又,因將探針插入並排於一個導孔 之複數插入部,故可以高的位置精度配置探針。 另外’前述探針卡之前述導孔係該導孔之水平剖面形狀 為四角形’在該導孔中相對向之側面分別具有複數溝部, 该等溝部係對向而設,前述插入部係該導孔内之該相對向 120334.doc 200809209 之溝部間之孔’也可在該插入部插入前述探針。 由於導孔具有前述形狀,探針可使用例如波形之彈笼 可使其粗於螺旋彈簧且縮短全長而縮小電感。又,探二也 可=成具有卡止於導孔之上端緣部之卡止部之構成。 前述導孔之水平剖面形狀之四角形尤其在形成長方形 時’可在同-區域内配置更窄間距之探針。例如,可在寬 3〇〇 之長方形導孔中,在對向之側面形成6〇 ^The invention is developed according to the series of the invention, and the purpose of the invention is to: in the support plate of the same area of the probe card, the positional accuracy of the needle can be reduced by a positional accuracy which is narrower than the previous distance. Fine inspection of high integrated components is performed. Means for Solving the Problems In order to achieve the above object, a probe card includes a circuit board and a support plate disposed under the circuit board and supporting the probe, and a probe for inspecting electrical characteristics of the object to be inspected And a probe is inserted into the guide hole formed in the support plate, and the front end of the probe protrudes from the guide hole below the support plate, and the insertion portion of the plurality of probes is arranged side by side. Thus, since a plurality of insertion portions for inserting a plurality of probes are provided in one guide hole, the probe card of the present invention can be disposed with a narrower distance than a probe card having a circular guide hole. Further, since the probe is inserted and arranged in parallel with the plurality of insertion portions of one of the guide holes, the probe can be placed with high positional accuracy. Further, the guide hole of the probe card has a horizontal cross-sectional shape of a quadrangular shape, and each of the guide holes has a plurality of groove portions on opposite sides thereof, and the groove portions are opposite to each other, and the insertion portion is the guide portion The probe in the hole may be inserted into the hole of the groove between the grooves of the 120334.doc 200809209. Since the via hole has the aforementioned shape, the probe can use a cage such as a wave shape to make it thicker than the coil spring and shorten the overall length to reduce the inductance. Further, the probe 2 can also be configured to have a locking portion that is locked to the upper edge portion of the guide hole. The quadrangular shape of the horizontal cross-sectional shape of the above-mentioned guide holes can be arranged with a narrower pitch probe in the same-area, especially when forming a rectangular shape. For example, in a rectangular guide hole having a width of 3 inches, 6 〇 ^ is formed on the opposite side.
之對向之溝部。可在此對向之溝部間之插人部插人探針, 以1 00 μηι間隔並聯地加以配置。 又,前述導孔也可形成於貫通前述支持板而設置之樹脂 層。如此,由於在導狀外周形成樹脂,故縱使在支持板 之材料使用例如切削加工性不良之玻璃基板,也容易形成 微細之導孔。 又,在前述支持板也可進一步形成插入2支探針之另一 導孔。 而,為形成前述形狀之導孔,有必要在插入探針之支持 板開汉微細之孔。但,,採用以往一般使用之鑽孔加工、或 超音波加工、喷砂加工等之機械加工、雷射加工時,難以 以高的位置精度與尺寸精度形成微細之前述形狀之導孔。 因此,在本發明中,在支持板中使用例如以派萊克絲玻璃 (美國康等公司註冊商標)所代表之蝴石夕酸玻璃之基板,經 由如下之步驟,在玻璃基板形成前述形狀之導孔。 即’首先,將並排具有複數插入有探針之插入部之孔之 模具立設於設置在立模基板之孔中。而將玻璃基板收容於 120334.doc 200809209 上面開口之容器,以前述立模基板之前述模具朝向前述容 器内之玻璃基板側之方式,將前述立模基板對前述玻璃基 板對向配置。接著,加熱前述容器内之玻璃基板,使該玻 离基板炫化使則述立模基板接近炼化之玻璃基板而將前 述立模基板之前述模具插入前述玻璃基板内。而在前述模 具插入前述玻璃基板之狀態下,冷卻該容器内之玻璃基 板,使該玻璃基板固化。苴尨 &义 ^具後,自别述容器取出前述玻璃 基板而除去插人玻璃基板之模具。而研磨除去前述模具之 前述玻璃基板之下面而形成前述導孔。又,所謂立模基 板,係用於立設模具之基板。又,前述模具係該模旦之水 平剖面形狀為四角形,在該模具中相對向之一組側面也可 具有複數相對向之凸部。 士前述模4之水平剖面形狀之四角形尤其在形成長方形 時,可在同一區域内配置更窄間距之探針。 前述孔也可為適合前述模具形狀。藉此’可更確實地在 立模基板立設模具。 、 一又,前述孔也可利用蝕刻形成於立模基板。藉此,可更 高精度地在立模基板形成孔。 將前述模具插入玻璃基板之步驟也可利用升降自如之保 持構件保持前述立模基板’藉前述保持構件以特定速度使 前述立模基板下降而施行…在加熱前述容器之玻璃基 板之際,前述立模基板亦可被加熱。 前述立模基板例如可由矽基板所構成。又,前述容器也 可由碳所形成。碳使用熱傳導性優異’且熱膨脹率與:石夕 120334.doc 200809209 酸玻璃同等或其以下之碳。因此’加熱時可將容器之熱有 效傳達至玻璃基板,又,碳在素材之粒子間有間隙,容易 排出玻璃基板内之氣泡。另外,碳不接著於玻璃基板,故 可由谷益簡單地取出玻璃基板。最好前述模具係由具有對 前述玻璃基板加熱溫度之耐熱性之材質所形成。 在除去模具之際’例如也可藉液體使模具熔化而由前述 玻璃f板加以除去。此情形’例如模具也可由金屬所形 成,前述液體也可#用不士 + » u 」使用王水。在模具之材料中,例如可使 用鎢、不銹鋼、鉬、鎳或鎳合金。 又,在除去模具之際,例如也可燃燒模具而由前述玻璃 基板加以除去。此情形,例如可在模具之材料中使用碳。 又在作為!木針卡之支持板之玻璃基板形成並排具有複 數插入有探針之插人部之導孔之際,也可使用包含下列步 驟之玻璃基板開孔方法:在玻璃基板形成具有大^前述導 孔=水平剖面之臨時孔之步驟;將溶化之樹脂填充於前述 臨時孔’其後使該樹脂固化之步驟.;及在前述固化之樹脂 形成兩述導孔之步辨 > ❿ ^ 依據此方法,由於樹脂之切削加工 I·生通比玻璃基板良好’故例如縱使利用機械加卫,也可容 易形成微細之導孔。因此’可在玻璃基板之特定位置,以 =的位置精度與尺寸精度形成特定尺寸之導孔。又,前述 V孔係έ亥導孔之太承 尺千纠面形狀為四角形,在該導孔十相對 ° 1面刀別具有複數溝部,該等溝部係對向而設,前述 插入部也可為該導孔内之該相對向之溝部間之孔。 在作為彳木針卡之支持板之玻璃基板形成並排具有複 120334.doc 10 200809209 數插入探針之插入部之導 ^ ^ ¥孔之際,也可使用包含下列步驟 之玻璃基板開孔方法:在玻填基板形成具有大於前述導孔 之JC平σ_(面之gro日守孔之步驟,·將具有適合前述臨時孔之形 狀之^模插入前述臨時孔之下部之步驟;將炼化之樹脂填 充:則述代挺上方之臨時孔,其後使該樹脂固化之步驟; 自前j臨時孔移除前述代模之步驟;及在前述固化之樹脂 形成前述導孔之步驟。依據此方法,僅加工臨時孔上部而The opposite of the ditch. The insertion of the probes between the opposing grooves can be arranged in parallel at intervals of 100 μm. Further, the via hole may be formed in a resin layer provided to penetrate the support plate. As described above, since the resin is formed on the outer periphery of the guide, it is easy to form fine guide holes even when a material for the support plate is used, for example, a glass substrate having poor machinability. Further, another guide hole into which two probes are inserted may be further formed on the support plate. Further, in order to form the guide holes of the aforementioned shape, it is necessary to open the fine holes in the support plate of the probe. However, it is difficult to form a fine guide hole of the above-described shape with high positional accuracy and dimensional accuracy when drilling or laser machining such as ultrasonic machining or sand blasting is generally used. Therefore, in the present invention, a substrate such as a oleophthalic acid glass represented by a Phillips glass (registered trademark of the company) is used in the support sheet, and the above-described shape guide is formed on the glass substrate via the following steps. hole. That is, first, a mold in which a plurality of holes having inserted into the insertion portion of the probe are arranged side by side is placed in a hole provided in the vertical mold substrate. The glass substrate is placed in a container opened on the upper surface of the 120334.doc 200809209, and the vertical mold substrate is disposed to face the glass substrate so that the mold of the vertical mold substrate faces the glass substrate side in the container. Next, the glass substrate in the container is heated to smear the substrate, and the vertical mold substrate is brought close to the refining glass substrate, and the mold of the above-described vertical mold substrate is inserted into the glass substrate. On the other hand, in the state in which the mold is inserted into the glass substrate, the glass substrate in the container is cooled to cure the glass substrate. After the 苴尨 & means, the glass substrate was taken out from the container and the mold for inserting the glass substrate was removed. The guide holes are formed by grinding and removing the underside of the glass substrate of the mold. Further, the vertical mold substrate is a substrate for erecting a mold. Further, in the mold, the horizontal cross-sectional shape of the die is a quadrangular shape, and a plurality of convex portions may be opposed to one side of the mold in the mold. In the square shape of the horizontal cross-sectional shape of the modulo 4, especially when a rectangle is formed, a probe having a narrower pitch can be disposed in the same region. The aforementioned holes may also be suitable for the aforementioned mold shape. Thereby, the mold can be erected more reliably on the vertical mold substrate. Further, the holes may be formed on the vertical mold substrate by etching. Thereby, a hole can be formed in the vertical mold substrate with higher precision. The step of inserting the mold into the glass substrate may be performed by holding the vertical mold substrate by a lifting member capable of lifting and lowering the vertical mold substrate at a specific speed by the holding member. When the glass substrate of the container is heated, the foregoing The mold substrate can also be heated. The above-mentioned vertical mold substrate can be constituted, for example, by a tantalum substrate. Further, the container may be formed of carbon. The carbon is excellent in thermal conductivity and has a thermal expansion coefficient of carbon equivalent to or lower than that of Shishi 120334.doc 200809209 acid glass. Therefore, the heat of the container can be efficiently transmitted to the glass substrate during heating, and carbon has a gap between the particles of the material, and the bubbles in the glass substrate are easily discharged. Further, since the carbon is not attached to the glass substrate, the glass substrate can be easily taken out by the company. Preferably, the mold is formed of a material having heat resistance to a heating temperature of the glass substrate. When the mold is removed, for example, the mold may be melted by a liquid to be removed by the glass plate. In this case, for example, the mold may be formed of a metal, and the liquid may also be aqua regia using <+> Among the materials of the mold, for example, tungsten, stainless steel, molybdenum, nickel or a nickel alloy can be used. Further, when the mold is removed, for example, the mold may be burned and removed from the glass substrate. In this case, for example, carbon can be used in the material of the mold. Also in action! When the glass substrate of the support plate of the wood needle card is formed side by side with a plurality of guide holes into which the insertion portion of the probe is inserted, a glass substrate opening method including the following steps may be used: the conductive substrate is formed on the glass substrate. a step of forming a temporary hole in the horizontal section; a step of filling the melted resin in the temporary hole 'after the resin is cured; and a step of forming the two conductive holes in the cured resin> 依据 ^ according to this method Since the cutting process of the resin I is better than that of the glass substrate, for example, fine guide holes can be easily formed even by mechanical reinforcement. Therefore, a specific size of the via hole can be formed at a specific position of the glass substrate with a positional accuracy of =1 and dimensional accuracy. Further, the V-hole type of the guide hole has a square shape, and the plurality of groove portions have a plurality of groove portions, and the groove portions are opposite to each other, and the insertion portion is also It is a hole between the opposite grooves in the guide hole. When the glass substrate which is the support plate of the eucalyptus needle card is formed side by side with the hole of the insertion portion of the insertion probe, the glass substrate opening method including the following steps can also be used: Forming a step of inserting a mold having a shape suitable for the temporary hole into the lower portion of the temporary hole in a glass-filled substrate having a JC level σ_ larger than the above-mentioned via hole; and refining the resin Filling: a step of preparing a temporary hole above the upper portion, and thereafter curing the resin; a step of removing the aforementioned molding from the temporary hole; and a step of forming the aforementioned via hole in the cured resin. According to the method, only Processing the upper part of the temporary hole
形成導孔即可,可更衮具/ 了更谷易形成導孔。又,樹脂僅填充於臨 訏孔之上部即可’可減少必要之樹脂量。又,前述導孔係 該導孔之水平剖面形狀為四角形,在該導孔中相對向之側 面/刀別具有複數溝部,該等溝部係對向而設,前述插入部 也可為該導孔内之該相對向之溝部間之孔。 另外’在作為探針卡之支持板之玻㈣板形成並排且有 複數插入有探針之插入部之導孔之際,也可使用包含下列 步驟之玻璃基板開孔方法:在玻璃基板形成具有大於前述 V孔之水平剖面之臨時孔之步驟;將適合前述導孔形狀之 模具t丁方之面插入前述臨時孔之步驟;將炼化之樹脂填 充於前述臨時孔與模具之間隙,其後使該樹脂固化之步 驟;除去插入前述樹脂之模具之步驟,·及研磨前述玻璃基 板之另一面,在前述玻璃基板移除模具之位置形成前述導 孔之步驟。依據此方法’由於樹脂之之熔化時之黏性低於 玻璃基板,故可毫無間隙地將熔化之樹脂填充於臨時孔與 模/、門可谷易形成微細之導孔。又,前述導孔係該導孔 之水平剖面形狀為四角形,在該導孔中相對向之側面分別 120334.doc 200809209 具有複數溝部,該等溝部係對向而設,前述插入部也可為 該導孔内之該相對向之溝部間之孔。 在前述模具之插入之際,可利用立設模具之治具插入, 該治具在前述樹脂固化後被移除。在此情形之模具之插入 中,也可在玻璃基板之下面側配置立設模具之治具,其 後,將模具立設於此立設模具之治具而將模具插入臨時孔 中又,也可預先將模具立設於立設模具之治具,由玻璃 除基板之下面側接近此立設模具之治具而同時將各模具插入 δπχ守孔令總之,可正禮地將模具配置於臨時孔内之特定 位置,故可正確地在玻璃基板之特定位置形成導孔。 發明之效果 依據本發明,由於在一個導孔中並聯地設有安裝探針之 複數插入部,故可在同一區域之支持板以比以往更窄間距 安裝更多數之探針,可以高的位置精度配置探針。又,可 提尚所形成之導孔之位置精度與尺寸精度。藉此,可精細 I 地施行高積體化元件之檢查。又,因間距雖窄,但可增加 探針之厚度,故可增加探針之設計自由度,製作高可靠性 之探針卡。 【實施方式】 以下,說明本發明之理想之實施型態。圖i係表示本實 施型態之探針卡1之側面之概略,此探針卡i具有電路基= 2、與配置於電路基板2之下面之支持板3。又,探針卡1全 體係以與載置於載置台4上之被檢查體之晶圓%相對向而 成平行方式被支持於未圖示之探針裝置。 120334.doc 200809209 支持板3係由玻璃板所形成,如圖2所示,全體上略呈圓 板化狀,在與載置台4上之晶圓%相對向之中央部,形成 複數導.孔5。 導孔5 ’如圖3所示,孔之水平剖面形狀為四角形,在孔 之對向之側面分別具有複數溝部5 a,溝部5 a係對向地被設 置。在導孔5中對向之溝部5a間之區域形成插入部%,在 此插入部5b插入探針! !,纟本實施型態中之導孔$之寬〇為The guide holes can be formed, and the guide holes can be formed more easily. Further, the resin can be filled only in the upper portion of the boring hole, and the amount of resin required can be reduced. Further, the guide hole has a horizontal cross-sectional shape of the guide hole having a square shape, and the side surface of the guide hole has a plurality of groove portions, and the groove portions are opposite to each other, and the insertion portion may be the guide hole. The hole between the grooves facing the inside. In addition, when the glass (four) plate as the support plate of the probe card is formed side by side and has a plurality of guide holes into which the insertion portion of the probe is inserted, a glass substrate opening method including the following steps may be used: the glass substrate is formed with a step of inserting a temporary hole larger than a horizontal cross section of the V hole; inserting a surface of the mold T which is suitable for the shape of the via hole into the temporary hole; filling the refining resin into the gap between the temporary hole and the mold, and thereafter a step of curing the resin; removing the mold inserted into the resin; and grinding the other side of the glass substrate to form the via hole at a position where the glass substrate is removed from the mold. According to this method, since the viscosity of the resin is lower than that of the glass substrate, the molten resin can be filled in the temporary hole and the mold/door, and the gate can be easily formed into a fine guide hole without any gap. Further, the guide hole has a horizontal cross-sectional shape of the guide hole having a square shape, and the side surface of the guide hole is opposite to each other 120334.doc 200809209 has a plurality of groove portions, and the groove portions are opposite to each other, and the insertion portion may be the same The hole in the guide hole that faces the groove. At the time of insertion of the aforementioned mold, the jig of the standing mold can be inserted, and the jig is removed after the resin is cured. In the insertion of the mold in this case, the jig for erecting the mold may be disposed on the lower side of the glass substrate, and thereafter, the mold is erected on the jig of the standing mold, and the mold is inserted into the temporary hole, and The mold can be set up in advance on the fixture of the vertical mold, and the lower side of the glass substrate is close to the fixture of the vertical mold, and at the same time, each mold is inserted into the δπχ 守孔令, and the mold can be arranged in a temporary manner. The specific position in the hole allows the guide hole to be formed at a specific position on the glass substrate. Advantageous Effects of Invention According to the present invention, since a plurality of insertion portions for mounting a probe are provided in parallel in one guide hole, a plurality of probes can be mounted at a narrower pitch than a conventional support plate in the same region, which can be high. Position accuracy configuration probe. Moreover, the positional accuracy and dimensional accuracy of the formed via holes can be improved. Thereby, the inspection of the highly integrated component can be performed finely. Moreover, since the pitch is narrow, the thickness of the probe can be increased, so that the design freedom of the probe can be increased, and a highly reliable probe card can be produced. [Embodiment] Hereinafter, a preferred embodiment of the present invention will be described. Fig. i is a view showing the side of the probe card 1 of the present embodiment. The probe card i has a circuit base = 2, and a support plate 3 disposed under the circuit board 2. Further, the entire probe card 1 is supported in parallel with the probe device (not shown) so as to face the wafer % of the object to be inspected placed on the mounting table 4. 120334.doc 200809209 The support plate 3 is formed of a glass plate. As shown in Fig. 2, the whole plate is slightly rounded, and a plurality of guide holes are formed in the central portion opposite to the wafer % on the mounting table 4. 5. As shown in Fig. 3, the guide hole 5' has a horizontal cross-sectional shape of a quadrangular shape, and has a plurality of groove portions 5a on the opposite side faces of the holes, and the groove portions 5a are opposed to each other. The insertion portion % is formed in the region between the opposing groove portions 5a in the guide hole 5, and the probe is inserted into the insertion portion 5b! ! , the width of the guide hole $ in this embodiment is
则μιη,溝部5a係以八為5〇 _,_6〇 _之大小及⑽ μπι之間距p被配置。 探針11如圖4所示,具有彈性部12與位於彈性部12之上 端部之^止部13成一體之構成。彈性部12係呈帶狀及波形 形狀。彈性部12之下端部成形為略c型,在此彈性部此 前端設有與晶圓1接觸之接觸部12a。卡止部13係長於導 孔5之溝部&之寬D,在將探針Π插人導孔5之際,卡止部 13具有作為阻擔部之功能。在此卡止部以上面設有與電 路基板2接觸之接觸部13a。本實施型態中之探仙之長ε 為1500 μιη,’彈性部12之厚度為5〇 μηι。 接觸部12a向支持板3之下面側突出而如圖$所示,接觸 &晶® W上之特定處’例如接觸於所形成之元件之電極 卡止。(U3之接觸部13a向支持板3之上面側突出而接觸 於電路基板2之特定之接納μ。 接觸邛2a。而,使晶圓W上之電極 部與電路基板2上之接觸部2a電性導通。 此種導孔5例如係以如 基板形成導孔5用之開孔 以下方式形成。圖6係表示在玻璃 I置21之構成之概略,此開孔裝 120334.doc 200809209 置21係設置有收容成為支持板3之玻璃基板22之容器。 容器23之上面開口’縱剖面形成凹型之箱狀。容器23之内 側之側面隨著由容器23之底面接近於開口面,而形成容器 23之内徑逐次增大之圓錐形狀。容器23係以線膨脹係數稍 微小於玻璃基板22之材料,且熱傳導性良好而不炼黏於玻 璃基板22之材質,例如碳所形成。藉此,防止因冷卻時之Then, μιη, the groove portion 5a is arranged with an interval of 8 〇, _6 〇 _ and a distance (10) between μ μm. As shown in Fig. 4, the probe 11 has an elastic portion 12 integrally formed with a stopper portion 13 located at an upper end portion of the elastic portion 12. The elastic portion 12 has a strip shape and a wave shape. The lower end portion of the elastic portion 12 is formed in a slightly c-shaped shape, and the front end of the elastic portion is provided with a contact portion 12a which is in contact with the wafer 1. The locking portion 13 is longer than the width D of the groove portion of the guide hole 5, and the locking portion 13 functions as a blocking portion when the probe is inserted into the guide hole 5. The locking portion is provided with a contact portion 13a that is in contact with the circuit board 2 on the locking portion. In the present embodiment, the length ε of the sensation is 1500 μm, and the thickness of the elastic portion 12 is 5 〇 μηι. The contact portion 12a protrudes toward the lower surface side of the support plate 3, and as shown in Fig. $, the specific portion on the contact & crystal W is locked, for example, by contact with the electrode of the formed element. (The contact portion 13a of the U3 protrudes toward the upper surface side of the support plate 3 to contact the specific receiving μ of the circuit substrate 2. The contact electrode 2a is electrically connected to the electrode portion on the wafer W and the contact portion 2a on the circuit substrate 2. Such a via hole 5 is formed, for example, in the following manner as an opening for forming a via hole 5 in a substrate. Fig. 6 is a schematic view showing a configuration in which a glass I is placed 21, which is provided with a structure of 120334.doc 200809209 A container for accommodating the glass substrate 22 serving as the support plate 3 is provided. The upper opening of the container 23 is formed in a concave shape in a longitudinal section. The side of the inner side of the container 23 forms a container 23 as the bottom surface of the container 23 approaches the opening surface. The inner diameter of the container is increased in a conical shape. The container 23 has a linear expansion coefficient slightly smaller than that of the glass substrate 22, and has good thermal conductivity and is not formed by adhering to the material of the glass substrate 22, such as carbon. When cooling
縮小導致容H23内之玻璃基板22破損,或冷卻後不能由容 裔2 3取出玻璃基板2 2。 容器2 3係被支持構件3 0支持而被收容於加熱容器3】内。 加熱容器3“列如係形成上面開口且底面閉口之略圓筒狀。 加熱容器3 1例如係由石英祐:殖形士、 央圾离形成。加熱容器31之上面開 口部係被蓋體32氣密地封閉。蓋體32例如係由陶瓷所形 成0 在加熱容器31之周圍,配置有藉電力之供應而發孰之^ 熱器33。加熱器33例如係配置於加熱容⑽之外側面與_ 面。加熱容器31係被隔熱材料形成之外蓋34所覆苗。上主 加熱器33係介在外蓋34與加熱容器31之間。 .在蓋體32之中央部,形成貫通上下方向之貫通孔— 在貝通孔32a,由蓋體32之上方至加熱容器η内插通著卢 上下方向延伸之軸40。軸4〇例如係由陶究所形成。軸· 如係形成中空。 之二Hi下方,例如安裝具有有厚度之四角板狀之形狀 =構㈣。保持構件41之下面仏係形成水平 持構㈣之下面仏形成吸引口 41“吸引口叫所 I20334.doc 200809209 利用通過軸4〇内之真 $ i 路42連通於未圖示真空泵等 置。藉由起動·停止來自此吸引口撕吸 可使作為亦如圖7所 立 保持構件41之下面41a。 _基板之石夕基板50裝卸於 部連接於配置在蓋體32之上方之馬達等之升 =相。升降驅動部_如係被支持於設置在蓋體32 支持體61上。升降驅動部6g例如係被控制㈣控 升降驅動部60使軸40上下動時’可使保持構件41 敎I動而使保持於保持構件41之石夕基板5〇對容器23内之加 ;"31進退。利用控制部62控制石夕基板50之升降速度、 升降位置。 I + 般:如在蓋體32與升降驅動部60之間之軸40,安袭例如圓 :之凸緣7:。在凸緣70與蓋體32之間介著伸縮自如之膜 -1。在此艇盒71設有未圖示之冷卻機構,以 ^側之熱傳達至升降驅動部6_。又,上述真㈣㈣ 係由凸緣70連接至外部之負壓產生裝置。 在開孔裝置21設有料定氣體供應至加熱容H31内之奉 體供應管75。氣體供應管75例如連接至加熱容器η之側 面。氣體供應管75通至未圖示之氣體供應源。在本實施型 恶中,在氣體供應源中封入氮氣,氮氣經由氣體供應管乃 被供應至加熱容器3 1内。 其次,說明有關使用上述開孔裝置21之導孔之形成步 驟。在本實施型態中’以對派萊克絲破璃(美國康寧公司 註冊商標)等之硼石夕酸玻璃之破璃基板,形成圖3所示之導 120334.doc 200809209 孔5之情形為例加以說明。 首先,如圖7所示,在方开彡 … 在方形之矽基板5〇之特定位置形成 :數孔5〇a。孔50a係其水平剖面形狀為四角形,孔5〇a之 對向之侧面分別形成複數溝部50b,此溝部邊係對向被設 置。在此等各孔5〇a中插入具有適合於孔5〇a之形狀之周面 2開孔拉具80。開孔模具8Q之水平剖面形狀與導孔5之水 =面形狀一致,本實施型態中之開孔難之高度阳 如為 10000 μιη。 石夕基板50之孔5Ga例如係藉❹光微影技術之乾式餘刻 所形成。孔5〇a具有2 μπι以内之位置精度與尺寸精度。孔 5〇a係以稍微大於被插入之開孔模具8〇之尺寸形成。矽基 板50之孔50a之配置及數係依照最終形成於玻璃基板^之 WL5之位置.適宜地設^。又,孔^之形成方法並不限於 乾式蝕刻加工。又,孔5〇a也可非為貫通孔。 開孔模具8 0例如且右對;^、中> 1 & 。 J戈/、有對後述之加熱時之溫度,例如 入〇 C之耐熱性’例如由鎢、不銹鋼、鉬、鎳或鎳合金等 五屬所形成。開孔模具崎如係利用㈣加工所形成。 又’開孔模具8G例如也可利用機械加工或電鑄所形成。 將開孔模具嶋4基㈣時,例如如圓8所示,在石夕 土板50塗佈接著劑L,將開孔模具8〇固定於石夕基板別。 又,此開孔模具80之固定例如也可藉利用摩入之嵌合進 行。 。 固定開孔模具80之矽基板5〇如圖6所示,在開孔模具肋 狀態’被吸附保持於開孔裝置21内之保持構件41之 J20334.doc -16- 200809209 下面41a。此矽基板50之吸附係藉來自吸引口 41b之吸引所 施行 ° 另一方面,在開孔裝置21之容器23收容方形且平板形狀 之玻璃基板22。玻璃基板22收容於容器23内時,氮氣由氣 體供應管75供應至加熱容器3 1内,將加熱容器3 j内維持於 含氮氣環境中。此際,加熱容器3 i内對外部維持正壓,以 防止外氣流入加熱容器3 1内。 _ 如此,如圖9(a)所示,在矽基板5〇與玻璃基板22接近之 狀態,利用加熱器33之發熱將加熱容器31内升溫。藉此, 將容器23内之玻璃基板22加熱至高於軟化點之約1〇〇〇c>c。 此%,矽基板50與開孔模具8〇亦升溫至與玻璃基板u同程 度之溫度。 玻璃基板22之溫度超過軟化點時.,玻璃基板“開始熔化 (圖9(b))。玻璃基板22開始熔化時,升降驅動部6〇藉控制 部62執行動作,使保持構件41以敎速度下降至特定位置 •(圖9(C))。藉此,將矽基板50之開孔模具80插入至玻璃基 板22内之特定深度。其後’停止加熱器33之發熱,在開孔 模具崎入溶化之玻璃基板22之狀態下,使玻璃基板⑽ 郃、固化。此時之冷卻係藉加熱時之温度變動緩慢施行。 又,此冷卻係在保持構件〇保持石夕基板Μ之狀態下施行。 玻璃基板22冷卻、固化後,停止保持構件41之吸引口 41b之吸引’藉升降驅動部6()使保持構件μ上升,使保持 構件41由矽基板50退避(圖9(d))。 其次,如圖⑷所示,玻璃基板22係在安裝開孔模具8〇 120334.doc -17- 200809209 與矽基板50之狀態下,由加熱容器3〗被取出。接著,例如 被浸潰於王水等藥劑,熔化開孔模具80(圖10(b))。如此, 由玻璃基板22除去開孔模具8〇與矽基板5〇,在玻璃基板22 之上面形成孔1〇〇。 ’、後例如研磨玻璃基板22之下面,貫通玻璃基板22之 孔100。如此,在玻璃基板22形成圖3所示之導孔5(圖 1 o(c))。此後,依需要研磨玻璃基板22之上面。 依據以上之步驟,利用光微影技術在矽基板50形成具有 高的位置精度與尺寸精度之複數之孔50a,利用立設於該 孔5 0a之開孔模具80,在玻璃基板22形成孔,故可容易 在作為支持板3之玻璃基板22形成具有高的位置精度與尺 寸精度之導孔5。 又,在開孔模具80也可使用碳。開孔模具80例如可藉切 削加工成導孔5之形狀。依據本發明之實施型態,在開孔 模具80例如使用鎢、不銹鋼、鉬、鎳或鎳合金等金屬之情 形,在由固化之玻璃基板22除去開孔模具8〇之際,例如浸 潰於王水等藥劑,溶化開孔模具8〇。另一方面,在開孔模 具8〇使用碳之情形,可藉燃燒碳,由玻璃基板^除去開孔 扠具80。妷之燃燒溫度約4〇〇,低於玻璃基板^之應變點 之5 1 0 C可僅燃燒開孔模具80而不致於使玻璃基板22變 形。 在開孔模具80使用碳之情形,作為玻璃基板之開孔裝 置,也可使用圖11所示之開孔裝置11()。開孔裝置11〇係在 本I明之貫施型態之開孔裝置21係附加使開孔模具燃燒 120334.doc 200809209 用之氧氣供應管76。氧氣供應管76連接於加熱容器31之側 面氧氣供應官76係通至未圖示之氧氣供應源,經由氧氣 仏H 76將氧氣供應至加熱容器3 1内。 將開孔核具8〇插入玻璃基板22,玻璃基板固化後(圖 ())利用開孔裝置Π0除去碳之開孔模具8〇之步驟例如 係利用如以下方式施行。The shrinkage causes the glass substrate 22 in the container H23 to be broken, or the glass substrate 2 2 cannot be taken out by the holder 2 3 after cooling. The container 2 3 is supported by the support member 30 and housed in the heating container 3]. The heating container 3 is formed in a slightly cylindrical shape in which the upper surface is open and the bottom surface is closed. The heating container 3 1 is formed, for example, by quartz: a shape, a central waste, and the upper opening of the heating container 31 is covered by the cover 32. The lid body 32 is, for example, made of ceramic. For example, a heater 33 is disposed around the heating container 31, and the heater 33 is disposed on the side of the heating chamber (10). The heating container 31 is formed of a heat insulating material and covered with a cover 34. The upper main heater 33 is interposed between the outer cover 34 and the heating container 31. In the central portion of the cover 32, a through-up is formed Through-hole in the direction - In the Beton-hole 32a, the shaft 40 extending in the up-and-down direction is inserted from the upper side of the cover 32 to the heating container η. The shaft 4 is formed, for example, by a ceramics. Below the Hi, for example, a shape having a square plate shape having a thickness = a structure (4) is attached. The lower side of the holding member 41 is formed into a horizontal holding structure (4), and the lower surface is formed to form a suction port 41. "Attraction port is called I20334.doc 200809209 Through the axis 4〇, the true $i road 42 is connected to the The vacuum pump is shown. The lower surface 41a of the holding member 41 can also be held as shown in Fig. 7 by starting and stopping the tearing from the suction port. The _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The lift drive unit_ is supported on the cover body 32 support body 61. When the lift drive unit 6g is controlled, for example, when the lift/lower drive unit 60 moves the shaft 40 up and down, the holding member 41 can be moved to hold the holding member 41 in the container 23; ; 31 advance and retreat. The control unit 62 controls the raising and lowering speed and the lifting position of the stone substrate 50. I + like: As the shaft 40 between the cover 32 and the lifting drive 60, the flange 7 is rounded, for example. A film -1 which is stretchable and contractible is interposed between the flange 70 and the lid body 32. The boat case 71 is provided with a cooling mechanism (not shown), and the heat of the side is transmitted to the elevation drive unit 6_. Further, the above true (four) (four) is a negative pressure generating device which is connected to the outside by the flange 70. The opening device 21 is provided with a body supply pipe 75 for supplying a predetermined gas to the heating capacity H31. The gas supply pipe 75 is connected, for example, to the side of the heating vessel n. The gas supply pipe 75 is connected to a gas supply source not shown. In the present embodiment, nitrogen gas is sealed in a gas supply source, and nitrogen gas is supplied into the heating vessel 31 through a gas supply pipe. Next, a step of forming a guide hole using the above-described opening device 21 will be described. In the present embodiment, the case of the glass substrate of the borax acid glass of the lyocell glass (registered trademark of Corning Co., Ltd.), etc., is formed as a guide 120334.doc 200809209 hole 5 shown in FIG. Explain. First, as shown in Fig. 7, in the square opening, a certain number of holes 5〇a are formed at a specific position of the square substrate 5〇. The hole 50a has a square cross-sectional shape in a square shape, and a plurality of groove portions 50b are formed on the opposite side faces of the holes 5〇a, and the groove portions are opposed to each other. A peripheral surface 2 opening puller 80 having a shape suitable for the hole 5〇a is inserted into each of the holes 5〇a. The horizontal cross-sectional shape of the opening die 8Q is identical to the water=face shape of the guide hole 5, and the height of the opening in this embodiment is difficult to be 10000 μm. The hole 5Ga of the Shixi substrate 50 is formed, for example, by a dry residual of the lithography technique. The hole 5〇a has positional accuracy and dimensional accuracy within 2 μπι. The hole 5〇a is formed to be slightly larger than the size of the inserted die 8〇. The arrangement and number of holes 50a of the ruthenium substrate 50 are suitably set at the position of WL5 which is finally formed on the glass substrate. Further, the method of forming the holes is not limited to the dry etching process. Further, the hole 5〇a may not be a through hole. The aperture die 80 is, for example, and right-handed; ^, medium > 1 & J Ge / has a temperature at the time of heating as described later, for example, the heat resistance of 〇 C is formed, for example, by five genera such as tungsten, stainless steel, molybdenum, nickel or nickel alloy. The open hole mold is formed by the processing of (4). Further, the opening die 8G can be formed, for example, by machining or electroforming. When the hole die 4 is used, the adhesive L is applied to the stone earth plate 50, for example, as shown by the circle 8, and the hole die 8 is fixed to the stone substrate. Further, the fixing of the opening die 80 can be carried out, for example, by fitting by friction. . The crucible substrate 5 of the fixed perforating die 80 is held as shown in Fig. 6 in the state of the perforated die ribs, which is held by the holding member 41 in the opening device 21, J20334.doc -16 - 200809209 below 41a. The adsorption of the crucible substrate 50 is performed by suction from the suction port 41b. On the other hand, the glass substrate 22 having a square shape and a flat shape is accommodated in the container 23 of the perforating device 21. When the glass substrate 22 is housed in the container 23, nitrogen gas is supplied from the gas supply pipe 75 to the heating container 31, and the inside of the heating container 3j is maintained in a nitrogen-containing atmosphere. At this time, the inside of the heating container 3 i maintains a positive pressure to the outside to prevent the outside air from entering the heating container 31. As shown in Fig. 9(a), in the state where the crucible substrate 5A and the glass substrate 22 are close to each other, the inside of the heating container 31 is heated by the heat generated by the heater 33. Thereby, the glass substrate 22 in the container 23 is heated to about 1 〇〇〇 c > c above the softening point. At this %, the crucible substrate 50 and the perforated mold 8 are also heated to the same temperature as the glass substrate u. When the temperature of the glass substrate 22 exceeds the softening point, the glass substrate "be begins to melt (Fig. 9 (b)). When the glass substrate 22 starts to melt, the elevation drive unit 6 performs an operation by the control unit 62 to cause the holding member 41 to rotate at a weft speed. Drop to a specific position (Fig. 9(C)). Thereby, the opening die 80 of the ruthenium substrate 50 is inserted into a specific depth in the glass substrate 22. Thereafter, the heat of the heater 33 is stopped, and the hole mold is opened. In the state in which the molten glass substrate 22 is melted, the glass substrate (10) is kneaded and solidified. At this time, the cooling is performed by the temperature fluctuation during heating. This cooling is performed while the holding member is held by the substrate. After the glass substrate 22 is cooled and solidified, the suction of the suction port 41b of the holding member 41 is stopped. The holding member μ is raised by the lifting/lowering driving unit 6 (), and the holding member 41 is retracted by the crucible substrate 50 (Fig. 9(d)). Next, as shown in Fig. 4, the glass substrate 22 is taken out by the heating container 3 in a state where the opening die 8 〇 120334.doc -17- 200809209 and the 矽 substrate 50 are mounted. Then, for example, it is immersed in the king. Water and other chemicals, melt the hole mold 80 (Figure 10 ( b)), the opening die 8 〇 and the 矽 substrate 5 除去 are removed from the glass substrate 22, and a hole 1 形成 is formed on the upper surface of the glass substrate 22. After that, for example, the underside of the glass substrate 22 is polished, and the glass substrate 22 is penetrated. The hole 100. Thus, the via hole 5 shown in Fig. 3 is formed on the glass substrate 22. (Fig. 1 (c)). Thereafter, the upper surface of the glass substrate 22 is polished as needed. According to the above steps, the photolithography technique is used. The substrate 50 is formed with a plurality of holes 50a having high positional accuracy and dimensional accuracy, and a hole is formed in the glass substrate 22 by the opening die 80 which is erected in the hole 50a, so that the glass substrate 22 as the support plate 3 can be easily formed. The guide hole 5 having high positional accuracy and dimensional accuracy is formed. Further, carbon may be used in the hole-opening mold 80. The hole-opening mold 80 may be processed into a shape of the guide hole 5, for example, according to an embodiment of the present invention, In the case where the hole mold 80 is made of a metal such as tungsten, stainless steel, molybdenum, nickel or a nickel alloy, when the perforated mold 8 is removed from the solidified glass substrate 22, for example, a chemical such as aqua regia is melted and melted. Mold 8 〇. On the other hand, in the opening In the case of using 8 碳 carbon, the open hole fork 80 can be removed from the glass substrate by burning carbon. The burning temperature of 妷 is about 4 〇〇, which is lower than the strain point of the glass substrate. The hole mold 80 does not deform the glass substrate 22. In the case where the hole mold 80 uses carbon, as the hole opening device of the glass substrate, the hole opening device 11 () shown in Fig. 11 can also be used. The opening device 21 of the present embodiment is additionally provided with an oxygen supply pipe 76 for burning the open hole mold 120334.doc 200809209. The oxygen supply pipe 76 is connected to the side of the heating container 31. Oxygen supply source, not shown, supplies oxygen to the heating vessel 31 via oxygen helium H 76. The step of inserting the opening core 8 into the glass substrate 22 and curing the glass substrate (Fig.) to remove the carbon opening die 8 by the opening device 例如 0 is performed, for example, in the following manner.
^固化玻璃基板22,由氧氣供應管76將氧氣供應至冷卻 、、、、。之加熱谷态3 1内。藉此可燃燒除去碳之開孔模 ”80此h形,玻璃基板22處於應變點之5〗,故可照 舊維持形狀而不致於變形。 利用以上,在開孔模具8〇使用碳之情形,可在開孔裝置 110之加熱容器31内除去開孔模具8〇。 形成於以上之實施型態之探針卡1之支持板3之導孔5如 圖12所示,也可形成在貫通支持板3而形成之樹脂層200。 樹脂層2(H)具有大於導孔5之水平剖面,其水平剖面例如為 略圓形。X ’樹脂層如圖13所示,其水平剖面也可為 長方形。又’導孔5彼此之間隔較小之情形,如圖⑷斤 示,也可將此等複數導孔5形成在〗處樹脂層2〇〇。另外, 如圖15所不’也可在支持板3混合地形成導孔5與例如水平 剖面形狀為長方形之另一導孔2〇1。另一導孔2〇1係形成於 探針Η之間隔較大處,在另—導孔加中插人旧探針… 而,導孔5、201分別形成於樹脂層2〇()。 形成於此種樹脂層2〇〇之導孔5例如可利用如以下方式形 成0 120334.doc -19· 200809209 首先,如圖16⑷所示,在支持板3之特定位置,例如利 鑽孔加工等之機械加工’貫通支持板3形成具有大於導 孔5之水平剖面之臨時孔21 〇。 於臨時孔210。其 而使其固化,形成 其次’將以约40(TC熔化之樹脂填充 後,如圖16(b)所示,冷卻所填充之樹脂 樹脂層2 0 0。 形成 在The glass substrate 22 is cured, and oxygen is supplied from the oxygen supply pipe 76 to the cooling, the, and the like. The heating valley is within 3 1. Thereby, the carbon opening die 80 can be burned and removed, and the glass substrate 22 is at the strain point 5, so that the shape can be maintained as it is without deformation. With the above, the carbon is used in the opening die 8 The opening die 8 can be removed in the heating container 31 of the opening device 110. The guiding hole 5 of the supporting plate 3 formed in the probe card 1 of the above embodiment can also be formed in the through support as shown in FIG. The resin layer 200 formed by the plate 3. The resin layer 2 (H) has a horizontal cross section larger than the guide hole 5, and its horizontal cross section is, for example, a slightly circular shape. The X' resin layer is as shown in Fig. 13, and its horizontal section may also be a rectangle. Further, in the case where the distance between the guide holes 5 is small, as shown in Fig. 4, the plurality of guide holes 5 may be formed in the resin layer 2'. Further, as shown in Fig. 15, The support plate 3 is mixedly formed with the guide hole 5 and another guide hole 2〇1 having a rectangular shape in a horizontal cross section. The other guide hole 2〇1 is formed at a larger interval between the probe turns, and is added to the other guide hole. The old probe is inserted in the middle... The via holes 5, 201 are respectively formed in the resin layer 2 (). The resin layer 2 is formed on the resin layer 2 The guide hole 5 can be formed, for example, by the following method: 0 120334.doc -19·200809209 First, as shown in Fig. 16 (4), at a specific position of the support plate 3, for example, a machining process such as a drilling process is performed to form a through support plate 3 A temporary hole 21 大于 having a horizontal cross section larger than the guide hole 5 is formed in the temporary hole 210. It is solidified, and the second portion will be cooled by about 40 (filled with TC melted resin, as shown in Fig. 16 (b) The filled resin resin layer 200 is formed in
而,如圖16(c)所示,例如藉機械加工貫通導孔$而 固化之樹脂層200之特定位置。 經由以上之步驟,首先在支持板3形成臨時孔21〇,在設 於此臨時孔21〇内之樹脂層形成導孔5。樹脂層2〇〇與形 成支持板3之玻璃基板相比’切削加工極為良好,故縱使 例如利用機械加工等’纟可容易形成極微小之導孔5。因 此’可以高的位置精度與尺寸精度在支持板3之特定位置 形成特定尺寸之導孔5。又,樹脂層200之熱膨脹率雖大於 玻璃基板,但如本實施型態般,由於樹脂層2〇〇形成於支Further, as shown in Fig. 16 (c), for example, a specific position of the resin layer 200 which is cured by mechanically passing through the via hole $ is obtained. Through the above steps, first, a temporary hole 21 is formed in the support plate 3, and a via hole 5 is formed in the resin layer provided in the temporary hole 21''. Since the resin layer 2 is more excellent in cutting work than the glass substrate on which the support plate 3 is formed, the minute guide holes 5 can be easily formed, for example, by machining or the like. Therefore, the guide hole 5 of a specific size can be formed at a specific position of the support plate 3 with high positional accuracy and dimensional accuracy. Further, although the coefficient of thermal expansion of the resin layer 200 is larger than that of the glass substrate, as in the present embodiment, the resin layer 2 is formed on the branch.
持板3令,幾乎沒有其影響。又’形成於樹脂層200之另一 導孔20 1也可利用以上之步驟形成。 又’形成於樹脂層200之導孔5也可利用如以下方式形 成首先如圖17(a)所示,形成與前述實施型態之臨時孔 2 1 0同一臨時孔210。 其次’如圖17(b)所示,將適合於臨時孔21〇之剖面形狀 且具有短於支持板3之厚度之長度之代模22〇插入臨時孔 2 1 〇。代模220之材料例如使用銅。 將代模220插入臨時孔21〇之下部後,將以約4⑽。c熔化 120334.doc -20- 200809209 之樹脂填充於此代模220上方之臨時孔21〇。其後,如圖 (c)所示,冷卻所填充之樹脂而使其固化,形成樹脂層 200 〇 形成樹脂層200時,以藥劑蝕刻代模22〇而由臨時孔21〇 中加以除去。而,如圖17⑷所示’例如藉機械加工貫通導 孔5而形成在固化之樹脂層2⑽之特定位置。 依據以上之方法,首先在支持板3形成臨時孔21〇,在此 • 臨時孔210之下部插入代模後,將溶化之樹脂填充於代 模220上方之臨時孔1〇,其後除去代模22〇,在固化之樹脂 層200形成導孔5,故僅加工臨時㈣之上部而形成導孔$ 即可,可更容易形成導孔5。又,樹脂層謂只要填充於臨 時孔10之上部即可,可減少其樹脂量。此方法對於即使不 在支持板3之厚纟全部形成導孔5也可引導探針^情形相 當有效。又,形成於樹脂層2〇〇之另一導孔2〇ι也可利用以 上步驟形成。 • 另外,形成於樹脂層20〇之導孔5也可利用如以下之方式 形成。首先’如圖18(a)所示,形成與前述實施型態之臨時 孔210同一之臨時孔2丨〇。 其次’如圖18(b)所示,將立模治具23〇配置成接觸於支 持板3之下面。在立模治具23〇之上面,與形成在支持板3 之導孔5相對之特定位置,形成有與導孔5之尺寸同一尺寸 之溝潰。溝23〇a係不貫通支持板3之淺溝,例如可利用 姓刻形成。而以·立模治呈+、、塞ΙΟ A从。α 供/口具23 0之溝230a為目標將適合導孔5 之模具231插入臨時孔21〇,#模具231之前端部屡入溝 120334.doc • 21 - 200809209 23〇a而將其豎起。在立模治具230中使用具有與支持板3同 私度之熱膨脹率之材料,例如使用砍基板。模具23丨之材 料中’使用在後述之樹脂之熔化溫度之400艺也不變形之 材料例如使用錄、鎳合金、銅、鋼合金、链或銘合金等 金屬。 將模具231插入臨時孔210後,將以400°c熔化之樹脂填 充於臨時孔21〇與模具231之間隙。其後,如圖18(c)所示, 冷卻填充之樹脂使其固化而形成樹脂層200。 形成樹脂層200後,如圖i8(d)所示,除去立模治具 230。而將插入模具23丨之支持板3例如浸潰於王水等藥 劑’如圖18(e)所示,將模具231熔化。 如此’除去模具2 3 1後,研磨支持板3之上面使其平坦化 日守’如圖18(f)所示,形成貫通樹脂層200之導孔5。 依據以上之方法,首先在支持板3形成臨時孔2 1 0,利用 此立模治具230在臨時孔210中插入模具231,故可正確地 決定對支持板3之模具231之位置。又其後,將樹脂填充於 S品時孔210與模具231之間隙,除去模具231而研磨支持板3 之上面’即可在除去模具231後之位置形成導孔5。又,形 成於樹脂層200之另一導孔2〇丨也可利用以上之步驟形成。 又’在利用立模治具230在臨時孔210中插入模具231之 際’也可預先在立模治具23〇之全部之溝23〇a中立設模具 23 1 ’由支持板3之下面側接近此立模治具230而同時在臨 時孔2 1 0中插入全部之模具23 1。 又’模具231之長度也可為長於臨時孔21〇,使模具231 120334.doc -22- 200809209 可貫通臨時孔2 1 〇。 以上,—面參照附圖—面說明本發明之適當實施型態, 但本發明不受此例所限定。且可瞭解:只要是同業業者, 顯然均可在申請專利範圍所載之範嘴内,想到各種之變更 - ㈣修正例,該等例當'然也屬於本發明之技術的範園。 產業上之可利用性 本^明可有效利用於檢查高積體度之電子元件之電氣特 性之探針卡。 ^ 【圖式簡單說明】 圖1係實施型態之探針卡之側面圖。 圖2係使用於圖1之探針卡之支持板之平面圖。 圖3係表示探針插入導孔之情形之導孔之平面圖。 ’係表示探針插人導孔之情形之導孔之縱剖面圖。 π圖5係表示探針之接觸部接觸於晶圓上之被測定對象, 十之卡止邵之接觸部接觸於電路基板之情形之說明圖。 籲 圖6係表不開孔裝置之構成之概略之縱剖面圖。 圖7係矽基板之立體圖。 圖8係固疋開孔銷之矽基板之縱剖面圖。 圖9係表不在玻璃基板形成導孔之步驟之說明圖,(a)係 j不在保持構件安裝秒基板之情形,(b)係表示使玻璃基板 、々之狀恶,(C)係表示使銷進入熔化之玻璃基板内之情 ()系表示解除保持構件對玻璃基板之吸附之情形。 圖1〇係表示接續在圖9後之在玻璃基板形成導孔之步 η ()表示由谷益取出玻璃基板之情形,(b)表示取走石夕 I20334.doc -23 - 200809209 基板,除去銷之情形,(C)表示研磨玻璃基板之下面而完成 導孔之情形。 圖11係表不其他實施型態之開孔裝置之構成之概略之縱 剖面圖。 圖12係表不其他實施型態之支持板之平面圖。 圖3係表不其他實施型態之支持板之平面圖。 圖係表示其他實施型態之支持板之平面圖。 圖15係表示其他實施型態之支持板之平面圖。 圖16係表示支持板之導孔之形成步驟之說明圖,⑷係表 示形成臨時孔之彳杳在彡 > ^ 形,(b)係表示形成樹脂層之情形, 係表示完成導孔之情形。 圖17係表示支持;夕道7丨 泠孔之形成步驟之說明圖,()俦奈 示形成臨時孔之情形,总主-> 1 Μ系表 (b)係表不在臨時孔中插入代模 形,(C)係表示在代模上方合月 < I B守孔形成樹脂層之愔, (d)係表示完成導孔之情形。 圖1 8係表示支持板之導 〒敬之v孔之形成步驟之說明圖 示形成臨時孔之情形,(b)# )糸表 (㈧係表不在臨時孔中插入 形,(C)係表示在臨時孔盥掇目 、…之ί月 才钆舁拉具之間隙形成樹 (d)係表示除去立模基板之 ㈢之h形, 伋之^形,(e)係表示除去模且 形,(f)係表示完成導孔之情形。 、/、之f月 【主要元件符號說明】 2 3 探針卡 電路基板 支持板 120334.doc -24. 200809209 5 導孔 11 探針 13 卡止部 50 矽基板 80 開孔模具 200 樹脂層 201 其他導孔 210 臨時孔Holding the board 3 orders, almost no impact. Further, another via hole 20 1 formed in the resin layer 200 can also be formed by the above steps. Further, the via hole 5 formed in the resin layer 200 can be formed as follows. First, as shown in Fig. 17 (a), the temporary hole 210 is formed in the same manner as the temporary hole 2 1 0 of the above-described embodiment. Next, as shown in Fig. 17 (b), a dummy 22 〇 which is suitable for the cross-sectional shape of the temporary hole 21 且 and has a length shorter than the thickness of the support plate 3 is inserted into the temporary hole 2 1 〇. The material of the mold 220 is, for example, copper. After inserting the mold 220 into the lower portion of the temporary hole 21, it will be about 4 (10). c The resin of 120334.doc -20- 200809209 is melted to fill the temporary hole 21〇 above the mold 220. Thereafter, as shown in (c), the filled resin is cooled and solidified to form a resin layer 200. When the resin layer 200 is formed, it is removed by the temporary etching hole 21 by the chemical etching mold 22. Further, as shown in Fig. 17 (4), a specific position of the cured resin layer 2 (10) is formed by, for example, machining through the via hole 5. According to the above method, first, a temporary hole 21 is formed in the support plate 3, and after the mold is inserted into the lower portion of the temporary hole 210, the melted resin is filled in the temporary hole 1〇 above the mold 220, and then the mold is removed. 22, since the via hole 5 is formed in the cured resin layer 200, it is only necessary to process the upper portion of the temporary (4) to form the via hole $, and the via hole 5 can be formed more easily. Further, the resin layer may be filled in the upper portion of the temporary hole 10 to reduce the amount of resin. This method is effective for guiding the probe even if the guide holes 5 are not formed entirely in the thickness of the support plate 3. Further, the other via hole 2〇 formed in the resin layer 2 can be formed by the above steps. Further, the via hole 5 formed in the resin layer 20A can also be formed as follows. First, as shown in Fig. 18 (a), a temporary hole 2 is formed in the same manner as the temporary hole 210 of the above-described embodiment. Next, as shown in Fig. 18 (b), the vertical jig 23 is placed in contact with the lower surface of the support plate 3. On the upper surface of the vertical mold fixture 23, a groove having the same size as that of the guide hole 5 is formed at a specific position opposed to the guide hole 5 formed in the support plate 3. The groove 23〇a is a shallow groove that does not penetrate the support plate 3, and can be formed, for example, by a surname. And the vertical model is +, and the ΙΟ ΙΟ A. The α supply/mouth 23 0 groove 230a is intended to insert the mold 231 suitable for the guide hole 5 into the temporary hole 21〇, and the front end of the mold 231 is repeatedly plunged into the groove 120334.doc • 21 - 200809209 23〇a . A material having a coefficient of thermal expansion which is the same as that of the support plate 3 is used in the vertical jig 230, for example, a chopped substrate is used. In the material of the mold 23, a material which is not deformed by using 400, which is a melting temperature of a resin to be described later, is used, for example, a metal such as a nickel alloy, a copper alloy, a steel alloy, a chain or an alloy. After the mold 231 was inserted into the temporary hole 210, the resin melted at 400 ° C was filled in the gap between the temporary hole 21 〇 and the mold 231. Thereafter, as shown in FIG. 18(c), the filled resin is cooled and solidified to form the resin layer 200. After the resin layer 200 is formed, the vertical mold jig 230 is removed as shown in Fig. i8(d). On the other hand, the support plate 3 inserted into the mold 23 is dipped in a drug such as aqua regia, as shown in Fig. 18(e), and the mold 231 is melted. After the mold 213 is removed, the upper surface of the support plate 3 is polished to be flattened. As shown in Fig. 18 (f), the via hole 5 penetrating the resin layer 200 is formed. According to the above method, the temporary hole 2 1 0 is first formed in the support plate 3, and the mold 231 is inserted into the temporary hole 210 by the vertical mold jig 230, so that the position of the mold 231 of the support plate 3 can be accurately determined. Thereafter, the resin is filled in the gap between the hole 210 and the mold 231 in the S product, and the mold 231 is removed to polish the upper surface of the support plate 3. The guide hole 5 can be formed at a position after the mold 231 is removed. Further, the other via hole 2 formed in the resin layer 200 can also be formed by the above steps. Further, when the mold 231 is inserted into the temporary hole 210 by the vertical mold fixture 230, the mold 23 1 ' may be vertically set in the groove 23 〇 a of the vertical mold fixture 23 ' from the lower side of the support plate 3 Close to the vertical mold fixture 230 while inserting all of the molds 23 1 into the temporary holes 210. Further, the length of the mold 231 may be longer than the temporary hole 21, so that the mold 231 120334.doc -22-200809209 can penetrate the temporary hole 2 1 〇. The above embodiments are described with reference to the accompanying drawings, but the present invention is not limited by this example. It can be understood that as long as they are peers, it is obvious that they can all think of various changes in the scope of the application for patents - (4) Amendments, which are also the scope of the technology of the present invention. Industrial Applicability This specification can be effectively utilized as a probe card for inspecting the electrical characteristics of electronic components having a high degree of integration. ^ [Simple description of the drawing] Fig. 1 is a side view of the probe card of the embodiment. Figure 2 is a plan view of a support plate used in the probe card of Figure 1. Fig. 3 is a plan view showing a guide hole in a case where a probe is inserted into a guide hole. ' is a longitudinal sectional view showing a guide hole in the case where the probe is inserted into the guide hole. πFig. 5 is an explanatory view showing a case where the contact portion of the probe is in contact with the object to be measured on the wafer, and the contact portion of the ten-card stop is in contact with the circuit board. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 6 is a schematic longitudinal sectional view showing the configuration of a non-opening device. Figure 7 is a perspective view of a substrate. Figure 8 is a longitudinal cross-sectional view of the ruthenium substrate of the tamping aperture pin. Fig. 9 is an explanatory view showing a step of forming a via hole in a glass substrate, wherein (a) is a case where the second substrate is not mounted on the holding member, (b) is a glass substrate, and a crucible is formed, and (C) is a The fact that the pin enters the molten glass substrate means that the adsorption of the holding member to the glass substrate is released. Fig. 1 is a view showing a step of forming a via hole on a glass substrate subsequent to Fig. 9 (wherein η) indicates that the glass substrate is taken out by the valley, and (b) indicates that the substrate is removed by Shixia I20334.doc -23 - 200809209, In the case of a pin, (C) represents a case where the underside of the glass substrate is ground to complete the via hole. Fig. 11 is a schematic longitudinal cross-sectional view showing the configuration of a perforating device of another embodiment. Figure 12 is a plan view showing a support plate of another embodiment. Figure 3 is a plan view of a support plate of another embodiment. The figure shows a plan view of a support plate of other embodiments. Figure 15 is a plan view showing a support plate of another embodiment. Fig. 16 is an explanatory view showing a step of forming a guide hole of a support plate, wherein (4) indicates that a temporary hole is formed in the shape of 彡>^, and (b) indicates a case where a resin layer is formed, which indicates a case where the guide hole is completed. . Fig. 17 is a view showing the support; the explanation of the step of forming the pupil of the eve 7; () shows the case where the temporary hole is formed, and the total master-> 1 Μ series table (b) is not inserted into the temporary hole. The mold shape, (C) indicates that the merging of the resin layer is formed on the upper side of the mold, and (d) indicates the case where the guide hole is completed. Fig. 1 is a diagram showing the steps of forming the v-hole of the support plate. The illustration shows the case of forming the temporary hole, (b) #) 糸 table ((8) the table is not inserted into the temporary hole, and (C) is expressed in The temporary hole 、 , , , , , , , , , , , , , , , , , , , , , , , ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( f) indicates the completion of the guide hole. / /, f month [main symbol description] 2 3 probe card circuit board support plate 120334.doc -24. 200809209 5 guide hole 11 probe 13 lock portion 50 矽Substrate 80 Perforated mold 200 Resin layer 201 Other guide holes 210 Temporary holes
220 代模 230 立模治具 231 模具 120334.doc -25-220 Die Model 230 Vertical Form Fixture 231 Mold 120334.doc -25-
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TWI422834B (en) * | 2009-11-04 | 2014-01-11 | Nihon Micronics Kk | A probe guide member and a test method having a probe card and a semiconductor device using the same |
TWI684011B (en) * | 2016-07-28 | 2020-02-01 | 義大利商探針科技公司 | Probe card for electronic devices |
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WO2008133089A1 (en) * | 2007-04-20 | 2008-11-06 | Nhk Spring Co., Ltd. | Conductive contact unit |
JPWO2009130737A1 (en) * | 2008-04-21 | 2011-08-04 | 富士通株式会社 | Inspection substrate, inspection substrate manufacturing method, and inspection method using the inspection substrate |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6343940B1 (en) * | 2000-06-19 | 2002-02-05 | Advantest Corp | Contact structure and assembly mechanism thereof |
JP2002365308A (en) * | 2001-06-08 | 2002-12-18 | Japan Electronic Materials Corp | Vertical blade type probe, vertical blade type probe unit and vertical blade type probe card using the same |
JP3991682B2 (en) * | 2001-12-28 | 2007-10-17 | 松下電器産業株式会社 | Precision drilling method of glass, manufacturing method of ferrule for optical fiber connector, and manufacturing method of magnetic disk glass substrate |
JP4578807B2 (en) * | 2002-04-16 | 2010-11-10 | 日本発條株式会社 | Conductive contact holder |
JP4905872B2 (en) * | 2005-02-18 | 2012-03-28 | 日本発條株式会社 | Conductive contact unit |
US20090205372A1 (en) * | 2005-07-13 | 2009-08-20 | Toyko Electron Limited | Method and device for forming hole in glass substrate |
JP5005195B2 (en) * | 2005-07-13 | 2012-08-22 | 東京エレクトロン株式会社 | Probe card manufacturing method |
JP4884753B2 (en) * | 2005-11-22 | 2012-02-29 | 日本発條株式会社 | Conductive contact unit and conductive contact |
-
2007
- 2007-04-18 TW TW96113702A patent/TW200809209A/en not_active IP Right Cessation
- 2007-04-18 WO PCT/JP2007/058420 patent/WO2007123150A1/en active Application Filing
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI422834B (en) * | 2009-11-04 | 2014-01-11 | Nihon Micronics Kk | A probe guide member and a test method having a probe card and a semiconductor device using the same |
TWI684011B (en) * | 2016-07-28 | 2020-02-01 | 義大利商探針科技公司 | Probe card for electronic devices |
Also Published As
Publication number | Publication date |
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TWI328685B (en) | 2010-08-11 |
WO2007123150A1 (en) | 2007-11-01 |
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