TW200805611A - Manufacturing method of substrate without using exposure developing process and its inserted circuit structure - Google Patents

Manufacturing method of substrate without using exposure developing process and its inserted circuit structure Download PDF

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TW200805611A
TW200805611A TW95124867A TW95124867A TW200805611A TW 200805611 A TW200805611 A TW 200805611A TW 95124867 A TW95124867 A TW 95124867A TW 95124867 A TW95124867 A TW 95124867A TW 200805611 A TW200805611 A TW 200805611A
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Taiwan
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layer
line
substrate
metal layer
forming
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TW95124867A
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Chinese (zh)
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TWI310599B (en
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Qian-Wei Zhang
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Kinsus Interconnect Tech Corp
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Abstract

In the invented manufacturing method of substrate without the application of exposure developing process and its embedded circuit structure, only one from the UV (ultra-violet) light, the excimer laser and the mold is used to form the minute via -hole trough and/or circuit trough in the build-up material on the core-layer substrate, in which minute via -hole and circuit are formed after forming the electroplated metal inside the via -hole trough and the circuit trough. Thus, as no exposure developing is used, it is capable of using the same machine to manufacture the minute via -hole and circuit such that it is easy to control the precision. As the circuit isembedded in the build-up material, the adhesion force is greatly increased and is not changed due to the condition control of the following process and the chemical liquid such that the line-width control is easy to reach high density. Therefore, the alignment precision is high; and it is easy to manufacture the ring-less via -hole for the minute via hole between the layers so as to increase the layout space.

Description

200805611 九、發明說明: 【發明所屬之技術領域】 本發明係_-種載板製作方法及其喊線路結構,尤指不採 用曝光顯影製㈣載板製作綠及其⑽線路結構。200805611 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method for fabricating a carrier plate and a shunting circuit structure thereof, and more particularly to the use of exposure and development (4) carrier plates for green and (10) wiring structures.

【先前技術】 由於電子產品輕薄短小之趨勢,加上功能之不斷增多,使得晶片 之I/O數快速增加,相對的封裝技術也不斷更新,現今在高階產 品中已多數覆晶封裝(Flip Chip) ,封裝密度也隨之[Prior Art] Due to the trend of thin and light electronic products and the increasing functions, the number of I/Os in the chip is rapidly increasing, and the relative packaging technology is constantly updated. Nowadays, in the high-end products, most of the flip chip packages (Flip Chip) ), the packing density is also followed

不斷地由90咖快速發展至65nm,甚至到45nm的量產技術。 製作載板時為了效能的提升,也開始使用低介電常數([⑽k)晶圓 (Wafer),但線寬均勻性(祕㈣⑺的控制,必須由現行^ 仏一15%(25咖V- 5um)提升至1〇〜15um仏1〇%(1〇咖仏 之高規格’同時IC載板上的線寬變細,亦即也須由快速縮 小至30卿甚至有2〇⑽的絲。對於層間削、導孔的孔環⑻呢) 大小也由單邊25规縮至15卿甚至無孔娜的設叶。 然而’因線路變細使得線路和基材附著力大幅減少,對產品信賴 性測試均產生極大顧。所叫發新触結構减造方法以提供 解決對策乃是當務之急。 /' 習知的1C編構—般為:層至八轉層板,其所用材料為陶 5 200805611 究或有機材料。在製造過財,均料敏流程依料連,不作 繁複多工’且各流程會因魏生產條件控制,製造公差 簡略來說,㈣嶋嘛槪致分為:⑽作核心板 ⑵增層麵合;⑶雷射鑽微小導孔;⑷沉積 金屬;⑸貼_光材料,·⑹曝光形成線路;⑺顯像;⑻電錢; ⑼剝除感光材料’·⑽快速钱刻露出沉積導電金屬層形成要線 路0 在上述⑶〜⑹和⑷步驟之間因由不同機械製造,在高精密 求時,對位精度會產生因難。而在⑻〜⑽步驟♦,則因藥ς的 特性及設備的設計會使得魏製作雜寬㈣財錄以掌握, 其製造_金屬鱗,尤其是在線路變細,將因 材有單面接觸’又加上細線變細而大幅減少致: 過對信賴性測試。 通 【發明内容】 本發明之主要目的在提供—種不採_絲難簡载板製作方 法及其内麟路結構,其朗排除固有偏見,排除微小導孔及線 路的製作必須_曝光、顯影等製程,鶴著紫外光_、準分 子雷射版薦Laser)和模具財之―,在核心祕板上的增刀層 200805611 材料中形成微小導孔样 樣製作出微小導孔和/或線=線路槽,並在其内形纖金屬後同 :此二=採Γ光顯影,可由同台機器製作微小導孔及線 不因後㉟、 内嵌在增層獅巾,畴力讀提升,且 声。賴相條件控編改變,線寬控㈣達到高密 ==7##娜㈣爾_及所關式得 【實施方式】 ==:;=_製作方法及其_路_ 於對位、製作细飨敗毋+、 不而衣與成本考1,對 衣作、、、田線路要求不高的結構 基板20的製作,tiτ、& 第1F圖所不之核心層 製作細線路要求a ㈣棚影馳,但對位、 回的增層的部分 本發明不採用曝氺顧旦 、用如1G〜II圖所示之 18h . 先為以程的載板製作方法,去製作出微j彻 18卜線路18a(如第π圖所示)。 专衣作出微小通孔 晴參閱第1Α〜Η图,# 1Α 載板製作方法Α 11圖為本發明不採用曝光顯影製程的 製造方法,而第uflH _核心層基板20的習知 第1叫圖所示則為本發明不採用曝光顯影製程的 7 200805611 載板製作方法。 簡略而言,本每 ....................Constantly developed from 90 coffee to 65nm, even to 45nm mass production technology. In order to improve the performance of the carrier, the low dielectric constant ([(10)k) wafer (Wafer) is also used, but the line width uniformity (secret (4) (7) control must be controlled by the current ^ 15% (25 coffee V- 5um) is upgraded to 1〇15um仏1〇% (1〇Curry's high specification' while the line width on the IC carrier board is thinner, that is, it must be quickly reduced to 30 qing or even 2 〇 (10). For the inter-layer shaving and guiding hole ring (8)), the size is also reduced from one side 25 to 15 sec or even no bonnet. However, due to the thinning of the line, the adhesion of the line and the substrate is greatly reduced, and the product is trusted. Sexual testing has produced great care. It is imperative to call the new touch structure reduction method to provide solutions. /' The well-known 1C structure is generally: layer to eight-layer laminate, the material used is Tao 5 200805611 Research or organic materials. In the manufacture of wealth, the process of the material-sensitive process is based on the material, and the process is controlled by the production conditions of Wei, and the manufacturing tolerances are simply Plate (2) layered; (3) laser drilled micro-via; (4) deposited metal; (5) posted _ light material, (6) exposure Into the line; (7) imaging; (8) electric money; (9) stripping of photosensitive material '·(10) fast money engraved deposition of conductive metal layer formation to line 0 between the above steps (3) ~ (6) and (4) due to different machinery manufacturing, in high precision When the accuracy of the alignment is difficult, and in the steps (8) to (10) ♦, due to the characteristics of the drug cartridge and the design of the device, Wei will make a miscellaneous (four) financial record to master, the manufacture of metal scales, especially in the line. Thinning, the material has a single-sided contact 'and the thin line is thinned and greatly reduced: over the reliability test. [Invention] The main purpose of the present invention is to provide a kind of not to use The production method and its inner lining structure, which excludes the inherent prejudice, eliminates the production of micro-via holes and circuits, must be exposed, developed, and other processes, with ultraviolet light _, excimer laser version recommended Laser and mold money - , in the core layer of the knife layer 200805611 material to form a small hole pattern to make tiny holes and / or line = line groove, and after the shape of the metal inside the same: the second = mining light development, Small guide holes can be made from the same machine After not because ㉟, embedded in the build-lion towel, domains force to enhance reading and sound. The control of the Lai phase condition is changed, the line width control (4) reaches the high density ==7##娜(四)尔_ and the closed type [implementation] ==:;=_production method and its _ road_ in the alignment, making fine飨 毋 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 GALAXY, but the part of the aligning and returning layer of the present invention does not use the exposure of Gu Dan, using 18h as shown in Figure 1G~II. First, the method of making the carrier board is to make the micro-j Line 18a (as shown in Figure π). The special clothes made a small through hole clear reference to the first Α Η , ,, # 1 Α 载 制作 制作 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 uf uf uf uf uf uf uf uf uf uf uf uf uf uf uf uf uf uf uf uf uf Shown here is a method for fabricating a 7 200805611 carrier board which does not employ an exposure and development process. In short, this is ....................

圖所不製作核心層基板2()的習知製造方法。 如第1F圖所示,在核心曆其七9n uυ “π _A conventional manufacturing method in which the core layer substrate 2 () is not produced is shown. As shown in Figure 1F, in the core calendar, its seven 9n uυ "π _

⑩原有的介電材質外會針對增層的部分形成增層材料i3,不過在材 質上並沒有差異,所以並沒有特別用不同的名詞作區別。 在完成形成增層材料13後,在不採用曝光顯影製程,僅藉著紫外 光(UV)、準分子雷射(Excimer Laser)和模具其中之_,在增層材 料13中形成微小導孔槽14和/或線路槽12,如ig圖所示。由於 知用紫外光(UV)對增層材料13作燒钱佈線及微小導孔(触· ation)時,除了比較不會伴隨一些問題外,由於在控制上比較 谷易進行,因此在形成微小導孔槽14和/或線路槽12時,採用紫 200805611 外光(UV)進行燒蝕會是最佳的選擇。 _紫外光⑽進行燒辦,可逐一形成每個微小導孔槽14和/ 或_路槽12,並在控制燒姓時間與速度下可形成深淺、形狀不同 的微小導孔槽14和/或線路槽12。若配合特殊透鏡作分光,紫外 光(―uv)燒韻還能同時製作數個微小導孔槽14和/或線路槽。 在完成了微小導孔槽14和/或線路槽12後還需形成可以傳遞訊號 的金屬線材、以及後處理程序。先在微小導孔槽14和/或線路槽 12中"请導電金屬層’而在增屠材料13上形成能夠傳導電鑛電流 的環境。接著,再如第1H圖所示以全板填孔電鑛在導電金如上 ^二電鏟金屬層16,並以侧和/或研磨去除部分第二麵金 屬層16 ’直到曝露出部分增層材料13,如第π騎示。在如第 =中,被填滿第二電鍍金屬16的線路槽12即為線路版,而 真滿4-電鑛金屬16的微小導孔槽12即為微小導孔⑽。 如此一來’因不採用曝光顯影,可由同台機器製作微小導孔勘 及線路版,精度易掌握。線路18a被内歲在增 =知_細曝_議切物13之±,2 線路收對增層材料13的附著力大幅提升,且德心/吏件 水(因無需使用曝光顯影)的條件控制而 ㈣及藥 密度。_器製作微小導孔⑽及線 間微小導孔也糊作出無孔娜邮⑽導孔 Y曰 此外,如第㈣所示之核心層基板20的製作,^佈,工間。 自无’提供一厚 9 200805611 度約為〇. 8mm的基板1 ’並形成厚度約為5〜12/zm的金屬層3於基 板1上,如第1A圖所示。基板1的材質一般選用Bismaleimide Triazine(BT)或其他有機材料,甚至為陶竞材質。接著,以機械 鐵孔’而貫穿金屬層3和基板卜形成寬度約為1〇〇〜25〇_的核 心基板通孔5 (core through h〇le),如第1B圖所示。然後,形 成枯質可為銅且厚度約為丨㈣_的第—電鍍金屬層7於金屬層 上3以及核心基板通孔5側壁上’如第1(:圖所示。如第圖所 7Γ去除刀第一電鍵金屬層7和金屬層3直到曝露出基板卜如 此,在第一電鍍金屬層7和金屬層3内,形成内層線路開口 n, 未被去除的第一電鍍金屬層7和金屬層3為内層線路。如第1F圖 所示之乾膜9 _以形献_電路。於f —魏金屬層7上形 成已圖案化的乾膜9,以作為去除部分第—電鍍金顧7和金屬声 3的光罩。接著,形成增層材料13,以包覆住第一電鑛金屬層7、 内層線路開口 n和核心基板通孔5,如第3f騎示。如㈣圖 所不之其表面為由增層材料13所包覆的,乃為已包覆載板。 藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明 之特徵與精神,而並非以上述所揭露的 ㈣Μ具體實施例來對本發 ^粑从嫌制。相反地,其目的是希望能涵蓋各種改變及具 目等性的安排於本發明所欲申請之專利範圍的範脅内。 200805611 【圖式簡單說明】 第1A〜II圖為本發明不採用曝光顯影製程的載板製作方法。 【主要元件符號說明】 1基板 3金屬層 _ 5核心基板通孔 7第一電鍍金屬層 9乾膜 11内層線路開口 13增層材料 12線路槽 14微小導孔槽 φ 16第二電鍍金屬層 18a線路 18b微小導孔 1110 The original dielectric material will form the build-up material i3 for the layered portion, but there is no difference in the material, so there is no special difference between the different terms. After the completion of the formation of the build-up material 13, a micro-via hole is formed in the build-up material 13 by ultraviolet light (UV), excimer laser, and mold without using an exposure and development process. 14 and/or line slot 12, as shown in the ig diagram. Since it is known that ultraviolet light (UV) is used as a burnt wiring and a small pilot hole (contact), it is not accompanied by some problems, and since it is relatively easy to control, it is formed in a small amount. When the guide hole 14 and/or the line groove 12 are used, ablation using violet 200805611 external light (UV) is the best choice. The ultraviolet light (10) is fired, and each of the small via holes 14 and/or the path grooves 12 may be formed one by one, and the micro-channel holes 14 having different depths and shapes may be formed under the control of the burning time and speed. Line slot 12. If a special lens is used for the splitting, the ultraviolet light (―uv) can also be used to make several tiny via slots 14 and/or line slots at the same time. After the microvia 14 and/or the trench 12 are completed, a metal wire capable of transmitting a signal and a post-processing procedure are formed. An environment capable of conducting an electric ore current is formed on the augmented material 13 in the small via holes 14 and/or the line grooves 12 in the "conductive metal layer'. Then, as shown in FIG. 1H, a full-plate fill electric ore is used in the conductive gold to shovel the metal layer 16 and remove a portion of the second metal layer 16' by side and/or grinding until the exposed portion is exposed. Material 13, such as the π riding. In the case of =1, the line groove 12 filled with the second plating metal 16 is the circuit board, and the minute hole 12 of the true full-metal metal 16 is the minute conduction hole (10). In this way, because the exposure and development are not used, the micro-conductor can be made into the circuit board by the same machine, and the accuracy is easy to grasp. The line 18a is increased by the internal temperature, and the adhesion of the layered material 13 is greatly improved, and the condition of the German/female water (due to the need to use exposure development) is greatly improved. Control and (4) and drug density. _Make a small guide hole (10) and a small guide hole between the lines to make a non-porous Namail (10) guide hole Y 曰 In addition, as shown in the fourth (four), the production of the core layer substrate 20, ^ cloth, work room. A metal layer 3 having a thickness of 9 200805611 and a thickness of about 8 to 12/zm is formed on the substrate 1 as shown in Fig. 1A. The material of the substrate 1 is generally selected from Bismaleimide Triazine (BT) or other organic materials, and even ceramic materials. Next, a core substrate through hole 5 having a width of about 1 〇〇 to 25 〇 is formed through the metal layer 3 and the substrate by a mechanical iron hole ', as shown in Fig. 1B. Then, a first plating metal layer 7 having a thickness of about 丨(四)_ is formed on the metal layer 3 and the sidewall of the core substrate via 5 as shown in the first figure (as shown in the figure). The first key metal layer 7 and the metal layer 3 of the knives are removed until the substrate is exposed. Thus, in the first plating metal layer 7 and the metal layer 3, the inner layer wiring opening n, the first plating metal layer 7 and the metal which are not removed are formed. The layer 3 is an inner layer line. The dry film 9_ shown in Fig. 1F is formed by a circuit. The patterned dry film 9 is formed on the f-wei metal layer 7 as a removed portion. And a mask of the metal sound 3. Then, a build-up material 13 is formed to cover the first electric metal layer 7, the inner layer line opening n and the core substrate through hole 5, as shown in the third figure. The surface of which is covered by the build-up material 13 is a coated carrier. It is intended to more clearly describe the features and spirit of the present invention by the detailed description of the preferred embodiments above, and not The specific embodiment disclosed above (4) is intended to be against the present invention. Conversely, the purpose is to The arrangement of various changes and specificities is within the scope of the patent scope of the present invention. 200805611 [Simple Description of the Drawings] Figs. 1A to II are diagrams showing a method of manufacturing a carrier which does not employ an exposure and development process. [Description of main component symbols] 1 substrate 3 metal layer _ 5 core substrate via 7 first plated metal layer 9 dry film 11 inner layer line opening 13 build-up material 12 line groove 14 micro-via hole φ 16 second plated metal layer 18a Line 18b tiny guide hole 11

Claims (1)

200805611 十、申請專利範圍: 1. 一種不採用曝光顯影製程的載板製作方法,該載板 製作方法包含: 提供一核心層基板; 在該核心層基板上形成一增層材料;以及 0 不採用曝光顯影製程,僅藉著紫外光(UV)、準分 子雷射(Excimer Laser)和模具其中之一,在 該增層材料中形成一微小導孔槽和/或一線 路槽。 2. 如申請專利範圍第1項所述之不採㈣光顯影製程 的載板製作方法,其中該載板製作方法進-步包含·· 在該微小導孔槽和/或該線路槽中沉積一導電金 φ 屬層; 以全板填孔電錢在該導電金屬層上形成—第 電鍍金屬層;以及 以钱刻和/或研磨去除部分該第二電鍍金屬層 直到曝露出部分該增層材料; s 其中, 路, 填滿該第二電鍍金屬的該線路槽即為線 而被填滿該第二電鐘金屬的該微小導孔 12 200805611 槽即為該微小導孔。 3·如申請專利範圍第1項所述之不採用曝光顯影製程 的載板製作方法,其中該核心層基板的製作方法進 一步包含: 提供一基板; 形成一金屬層於該基板上; 貫穿該金屬層和該基板,形成至少一核心基板通 孔(core through hole); 形成一第一電鍍金屬層於該金屬層上以及該核 心基板通孔侧壁上; 去除部分該第一電鍍金屬層和該金屬層直到曝 露出該基板,而在該第一電鍍金屬層和該金 屬層内,形成一内層線路開口,未被去除的 該第一電鍍金屬層和該金屬層為内層線路; 以及 形成該增層材料,以包覆住該第一電鍍金屬層、 該内層線路開口和該核心基板通孔。 4. -種不採用曝光顯影製程的載板内&線路結構,包 含: 13 200805611 -核心層基板,其表面上至少具有一增層材料; 一線路槽,係僅藉著紫外光(uv)、準分子雷射 (Excimer Laser)和模具其中之一形成在該增 層材料内; 一線路,係在該線路槽中形成屬於該線路的一電 鍍金屬,且該線路被内嵌在屬於該增層材料 φ 的該線路槽中; 其中,在形成該電鍵金屬前需在該線路槽中沉積 一導電金屬層。 14200805611 X. Patent application scope: 1. A method for fabricating a carrier board without using an exposure and development process, the method for fabricating the carrier comprises: providing a core layer substrate; forming a build-up material on the core layer substrate; The exposure developing process forms a micro via groove and/or a line trench in the build-up material only by one of ultraviolet light (UV), excimer laser and mold. 2. The method for fabricating a carrier plate according to claim 1, wherein the method for fabricating the carrier further comprises: depositing in the microvia and/or the trench a conductive gold φ layer; forming a first plated metal layer on the conductive metal layer with a full-board fill-in electricity; and removing a portion of the second plated metal layer by etching and/or grinding until the portion of the layer is exposed Material; s where, the line, the line groove filling the second plating metal is a line and is filled with the micro-via 12 of the second electric clock metal. The 200805611 slot is the micro-via. 3. The method of fabricating a carrier layer that does not use an exposure and development process as described in claim 1, wherein the method of fabricating the core layer substrate further comprises: providing a substrate; forming a metal layer on the substrate; penetrating the metal a layer and the substrate, forming at least one core through hole; forming a first plated metal layer on the metal layer and the sidewall of the core substrate; removing a portion of the first plated metal layer and the Forming a metal layer until the substrate is exposed, and forming an inner layer wiring opening in the first plating metal layer and the metal layer, the first plating metal layer not removed and the metal layer being an inner layer line; a layer of material to cover the first plated metal layer, the inner layer line opening, and the core substrate via. 4. - In-board & line structure without exposure and development process, comprising: 13 200805611 - Core layer substrate having at least one build-up material on its surface; a line groove, only by ultraviolet light (uv) One of an excimer laser and a mold is formed in the build-up material; a line is formed in the line groove to form an electroplated metal belonging to the line, and the line is embedded in the increase The layer material φ is in the line trench; wherein a conductive metal layer is deposited in the line trench before forming the key metal. 14
TW95124867A 2006-07-07 2006-07-07 Manufacturing method of substrate without using exposure developing process and its inserted circuit structure TW200805611A (en)

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US7906200B2 (en) 2009-02-20 2011-03-15 Unimicron Technology Corp. Composite circuit substrate structure
US8132321B2 (en) 2008-08-13 2012-03-13 Unimicron Technology Corp. Method for making embedded circuit structure
US8161638B2 (en) 2009-10-29 2012-04-24 Unimicron Technology Corp. Manufacturing method of circuit structure
US8191248B2 (en) 2008-09-17 2012-06-05 Unimicron Technology Corp. Method for making an embedded structure
US8288662B2 (en) 2009-10-26 2012-10-16 Unimicron Technology Corp. Circuit structure
US8294034B2 (en) 2009-12-17 2012-10-23 Unimicron Technology Corp. Circuit board and process for fabricating the same
US8424202B2 (en) 2009-12-31 2013-04-23 Unimicron Technology Corp. Process for fabricating a circuit board
US8578600B2 (en) 2009-12-30 2013-11-12 Unimicron Technology Corp. Process for manufacturing a circuit board

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TWI405514B (en) 2009-12-22 2013-08-11 Unimicron Technology Corp Method for fabricating wiring structure of wiring board

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8132321B2 (en) 2008-08-13 2012-03-13 Unimicron Technology Corp. Method for making embedded circuit structure
US8191248B2 (en) 2008-09-17 2012-06-05 Unimicron Technology Corp. Method for making an embedded structure
US7906200B2 (en) 2009-02-20 2011-03-15 Unimicron Technology Corp. Composite circuit substrate structure
US8288662B2 (en) 2009-10-26 2012-10-16 Unimicron Technology Corp. Circuit structure
US8161638B2 (en) 2009-10-29 2012-04-24 Unimicron Technology Corp. Manufacturing method of circuit structure
US8294034B2 (en) 2009-12-17 2012-10-23 Unimicron Technology Corp. Circuit board and process for fabricating the same
US8578600B2 (en) 2009-12-30 2013-11-12 Unimicron Technology Corp. Process for manufacturing a circuit board
US8424202B2 (en) 2009-12-31 2013-04-23 Unimicron Technology Corp. Process for fabricating a circuit board

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