TW200738859A - Etchant composition, composition for polishing, method for producing polishing composition and polishing method - Google Patents

Etchant composition, composition for polishing, method for producing polishing composition and polishing method

Info

Publication number
TW200738859A
TW200738859A TW096108392A TW96108392A TW200738859A TW 200738859 A TW200738859 A TW 200738859A TW 096108392 A TW096108392 A TW 096108392A TW 96108392 A TW96108392 A TW 96108392A TW 200738859 A TW200738859 A TW 200738859A
Authority
TW
Taiwan
Prior art keywords
composition
polishing
etchant
aqueous solution
weak acid
Prior art date
Application number
TW096108392A
Other languages
Chinese (zh)
Inventor
Kuniaki Maejima
Shinsuke Miyabe
Masahiro Izumi
Hiroaki Tanaka
Original Assignee
Nippon Chemical Ind
Speedfam Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Chemical Ind, Speedfam Co Ltd filed Critical Nippon Chemical Ind
Publication of TW200738859A publication Critical patent/TW200738859A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/023—Preparation by reduction of silica or free silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)

Abstract

The invention provides an etchant composition for polishing a semiconductor wafer, a method for preparing the etchant composition, and a method for polishing a semiconductor wafer by using the composition are provided to suppress the generation of particle, to obtain satisfactory surface smoothness and to improve polishing velocity. An etchant composition is an aqueous solution having the buffer solution composition comprising a weak acid and a quaternary ammonium, wherein the weak acid has pKa of 8.0-12.5 at 25 deg. C and the aqueous solution shows a buffer action at a pH range of 9.5-12 when diluted to 100 times. Also the etchant composition is an aqueous solution having the buffer solution composition comprising a weak acid, a quaternary ammonium and potassium wherein the weak acid has pKa of 8.0-12.5 at 25 deg. C and the aqueous solution shows a buffer action at a pH range of 9.5-12 when diluted to 100 times.
TW096108392A 2006-04-05 2007-03-12 Etchant composition, composition for polishing, method for producing polishing composition and polishing method TW200738859A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006103892 2006-04-05
JP2007048265A JP2007300070A (en) 2006-04-05 2007-02-28 Etchant composition for polishing semiconductor wafer, manufacturing method of polishing composition using same, and polishing method

Publications (1)

Publication Number Publication Date
TW200738859A true TW200738859A (en) 2007-10-16

Family

ID=38769283

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096108392A TW200738859A (en) 2006-04-05 2007-03-12 Etchant composition, composition for polishing, method for producing polishing composition and polishing method

Country Status (4)

Country Link
JP (1) JP2007300070A (en)
KR (1) KR20070100122A (en)
CN (1) CN101050348B (en)
TW (1) TW200738859A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009188058A (en) * 2008-02-04 2009-08-20 Nippon Chem Ind Co Ltd Polishing colloidal silica for semiconductor wafer, and method for producing same
DE102009022477A1 (en) * 2009-05-25 2010-12-16 Universität Konstanz A method of texturing a surface of a semiconductor substrate and apparatus for performing the method
TWI465556B (en) * 2010-09-14 2014-12-21 Everlight Chem Ind Corp Polishing composition for primary polishing of wafer
CN102618174A (en) * 2012-02-28 2012-08-01 南通海迅天恒纳米科技有限公司 Silicon wafer chemical-mechanical polishing composition with high dilution ratio and high stability
CN102775915B (en) * 2012-06-25 2014-04-16 深圳市力合材料有限公司 Silicon wafer fine polishing combined solution capable of inhibiting particle deposition and preparation method thereof
EP2682440A1 (en) * 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and a carbonate salt
US9633831B2 (en) * 2013-08-26 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same
CN108648995B (en) * 2018-05-22 2021-03-19 深圳市盛鸿运科技有限公司 Silicon wafer etching method for semiconductor integrated circuit
CN117431013B (en) * 2023-12-21 2024-04-26 芯越微电子材料(嘉兴)有限公司 Chemical mechanical polishing solution and polishing method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4163785B2 (en) * 1998-04-24 2008-10-08 スピードファム株式会社 Polishing composition and polishing method
JP4113282B2 (en) * 1998-05-07 2008-07-09 スピードファム株式会社 Polishing composition and edge polishing method using the same
JP4113288B2 (en) * 1998-09-04 2008-07-09 スピードファム株式会社 Polishing composition and silicon wafer processing method using the same
JP4179448B2 (en) * 2002-03-28 2008-11-12 スピードファム株式会社 Abrasive circulation supply method
JPWO2005029563A1 (en) * 2003-09-24 2007-11-15 日本化学工業株式会社 Silicon wafer polishing composition and polishing method
JP4291665B2 (en) * 2003-10-15 2009-07-08 日本化学工業株式会社 Abrasive composition for siliceous material and polishing method using the same

Also Published As

Publication number Publication date
CN101050348B (en) 2012-06-06
KR20070100122A (en) 2007-10-10
CN101050348A (en) 2007-10-10
JP2007300070A (en) 2007-11-15

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