TW200723540A - Display device and method for manufacturing the same - Google Patents

Display device and method for manufacturing the same

Info

Publication number
TW200723540A
TW200723540A TW095139416A TW95139416A TW200723540A TW 200723540 A TW200723540 A TW 200723540A TW 095139416 A TW095139416 A TW 095139416A TW 95139416 A TW95139416 A TW 95139416A TW 200723540 A TW200723540 A TW 200723540A
Authority
TW
Taiwan
Prior art keywords
gate
electrode
wires
layer
display device
Prior art date
Application number
TW095139416A
Other languages
Chinese (zh)
Other versions
TWI338373B (en
Inventor
Keun-Kyu Song
Bo-Sung Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200723540A publication Critical patent/TW200723540A/en
Application granted granted Critical
Publication of TWI338373B publication Critical patent/TWI338373B/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/125Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/311Phthalocyanine

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

A display device includes an insulating substrate; a plurality of gate wires formed on the insulating substrate, the plurality of gate wires including a gate electrode; a gate insulating layer covering the plurality of gate wires; a transparent electrode layer formed on the gate insulating layer, the transparent electrode layer including a source electrode and a drain electrode disposed about the gate electrode and spaced apart from each other to define a channel region disposed therebetween; a plurality of data wires covering a predetermined portion of the transparent electrode layer and being crossed insulatedly with the plurality of gate wires to define pixels; and an organic semiconductor layer formed on the channel region for each pixel, a predetermined portion of the organic semiconductor layer being operatively connected with the source electrode, the drain electrode, and the gate electrode to form a transistor having an improved characteristic and a novel structure.
TW095139416A 2005-11-17 2006-10-25 Display device and method for manufacturing the same TWI338373B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050110230A KR101219046B1 (en) 2005-11-17 2005-11-17 Display device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW200723540A true TW200723540A (en) 2007-06-16
TWI338373B TWI338373B (en) 2011-03-01

Family

ID=38039816

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095139416A TWI338373B (en) 2005-11-17 2006-10-25 Display device and method for manufacturing the same

Country Status (5)

Country Link
US (2) US7781759B2 (en)
JP (1) JP4602959B2 (en)
KR (1) KR101219046B1 (en)
CN (1) CN100573903C (en)
TW (1) TWI338373B (en)

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US7858513B2 (en) * 2007-06-18 2010-12-28 Organicid, Inc. Fabrication of self-aligned via holes in polymer thin films
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US7824939B2 (en) * 2007-10-23 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device comprising separated and electrically connected source wiring layers
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KR101670695B1 (en) * 2008-09-19 2016-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8841661B2 (en) * 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US20100224878A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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CN104795323B (en) 2009-12-04 2017-12-29 株式会社半导体能源研究所 Semiconductor device and its manufacture method
JP5636981B2 (en) * 2011-01-21 2014-12-10 セイコーエプソン株式会社 Liquid crystal display device and electronic device
WO2014109830A1 (en) * 2013-01-08 2014-07-17 Applied Materials, Inc. Metal oxynitride based heterojunction field effect transistor
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CN106647076A (en) * 2016-12-28 2017-05-10 深圳市华星光电技术有限公司 Liquid crystal display and liquid crystal display panel thereof
US20220242234A1 (en) * 2020-09-11 2022-08-04 Stephen Favis System integrating autonomous driving information into head up display
CN112242407B (en) * 2020-10-14 2022-07-12 武汉华星光电技术有限公司 Array substrate and preparation method thereof

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Also Published As

Publication number Publication date
JP2007140527A (en) 2007-06-07
US20070108442A1 (en) 2007-05-17
TWI338373B (en) 2011-03-01
US8044392B2 (en) 2011-10-25
JP4602959B2 (en) 2010-12-22
CN100573903C (en) 2009-12-23
KR20070052515A (en) 2007-05-22
KR101219046B1 (en) 2013-01-08
US20100276681A1 (en) 2010-11-04
US7781759B2 (en) 2010-08-24
CN1967867A (en) 2007-05-23

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