SU457407A1

SU457407A1 - Photoresistance

Info

Publication number: SU457407A1
Application number: SU1899516A
Authority: SU
Inventors: П.М. Валов; Б.С. Рывкин; С.М. Рывкин; И.Д. Ярошецкий
Original assignee: Ордена Ленина Физико-Технический Институт Имени А.Ф.Иоффе
Priority date: 1973-04-02
Filing date: 1973-04-02
Publication date: 1976-08-25

Description

(54) ФОТОСОПРОТИВЛЕНИЕ(54) PHOTO RESISTANCE

1one

Изобретение относитс к технике измерени временных и энергетических характеристик импульсов инфракрасного излучени СО и СО лазеров ( Я 10,6 мкм и 5,3 мкм соответственно) различной дли- тепьности вплоть до длительности 5 .,The invention relates to a technique for measuring the temporal and energy characteristics of infrared radiation pulses of CO and CO lasers (I 10.6 µm and 5.3 µm, respectively) of various lengths up to a duration of 5.,

Известны различные устройства дл измерени временных и энергетических характеристик импульсов инфракрасного излучени СО и СО лазеров. Одними из наиболее распространенных вл ютс устройства , датчики которых работают на принципе измерени межзонной или примесной фотопроводимости.Various devices are known for measuring the temporal and energy characteristics of infrared radiation pulses of CO and CO lasers. One of the most common are devices whose sensors operate on the principle of measuring interband or impurity photoconductivity.

Однако такими устройствами невозможно измер ть импульсы ивлучени длительностью короче 10 сек, а также их датчику часто требуетс принудительное охлаждение . Так например, наиболее быстрые из известных в насто щее вреьет фотоприемников дл СО -лазера - фотосопротивлени на основе + 5Ь требуют принудительного охлаждени и имеют разрешение не лучше 10 сек.However, such devices cannot measure pulses and radiation with a duration shorter than 10 seconds, and their sensor often requires forced cooling. Thus, for example, the fastest photo detectors for a CO laser, which are currently known, are photoresistance based on + 5L, they require forced cooling and have a resolution of no better than 10 sec.

Дл измерени временных и энергетических характеристик импульсов инфракрасного излучени СО и СО лазеров с длительностью вплоть до 5-10 сек и обеспечени возможности работы при комнатной температуре предлагаемое фотосопротивпение , служащее датчиком излучени , вьшолнено из дырочного материала с шириной запрещенной зоны, более чем в два раза превышающей энергию кванта излуче ни , примесные центры которого ионизированы , фотосопротивление дл получени наилучщей чувствительности при регистрации излучени СО -лазера может быть выполнено из дырочного германи , легированного элементами Щ группы, например Gtt или I п .To measure the temporal and energy characteristics of infrared radiation pulses of CO and CO lasers with a duration of up to 5-10 seconds and to enable operation at room temperature, the proposed photoresistance, which serves as a radiation sensor, is made of a hole material with a forbidden gap width of more than two times the energy of a quantum of radiation, whose impurity centers are ionized, the photoresistance can be performed to obtain the best sensitivity when registering radiation from a CO laser EHO hole of germanium, doped elements ui group, e.g. Gtt or I p.

Claims

The work of photoprotection made from a material whose impurity centers are ionized is based on the phenomenon of heating conductivity, the characteristic time of which is 10 seconds. In this case, in order to heat up the carriers, it is proposed to use, as the most effective, quantum phototransitions between the valence aona of the hole materials. Under the action of light incident on the photosensor, the effect of the change in mobility, its resistance, which leads to a change in the current in the circuit, changes. This change in current is recorded by the change in voltage taken from the load resistance. The dimensions of the sensor area may vary depending on the size of the spot of radiation incident on it. The concentration of free carriers of the photoresistance matter in the case of CO laser exceeds the level B, since at higher concentrations there is a danger of thermal signals competing with the photoconductivity signals . The optimum concentration from the point of view of sensitivity for a wavelength of 10.6 μm is a concentration of 6–10 cm. An experiment with a laser pulse duration of 10 s for this concentration is the following relative photoconductivity of O, 1 at an intensity of 1 MW / cm of incident light on the sample, which is not bad consistent with theoretical estimates. Claim 1. Photoresistance for measuring the temporal and energetic energies of infrared radiation, performed in the fuser with a band gap of more than two times the energy of the radiation quantum, characterized in that, in order to improve the temporal resolution and enable operation at At room temperature, the photoresistance is made of a hole semiconductor with ionized impurity centers.

2. The photoresistance according to claim 1, which is made from oily germanium doped with elements of 111 groups, for example G-a, I with concentration of free carriers in the range of 10 -