SU1597019A1 - METHOD FOR DEPOSITING POLYCRYSTALLINE SILICON FILMS - Google Patents

METHOD FOR DEPOSITING POLYCRYSTALLINE SILICON FILMS

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Publication number
SU1597019A1
SU1597019A1 SU4655025/25A SU4655025A SU1597019A1 SU 1597019 A1 SU1597019 A1 SU 1597019A1 SU 4655025/25 A SU4655025/25 A SU 4655025/25A SU 4655025 A SU4655025 A SU 4655025A SU 1597019 A1 SU1597019 A1 SU 1597019A1
Authority
SU
USSR - Soviet Union
Prior art keywords
polycrystalline silicon
silicon films
depositing polycrystalline
films
deposition
Prior art date
Application number
SU4655025/25A
Other languages
Russian (ru)
Inventor
А.С. Турцевич
В.П. Лесникова
В.И. Гранько
Л.Г. Семенов
Original Assignee
А.С. Турцевич
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by А.С. Турцевич filed Critical А.С. Турцевич
Priority to SU4655025/25A priority Critical patent/SU1597019A1/en
Application granted granted Critical
Publication of SU1597019A1 publication Critical patent/SU1597019A1/en

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Abstract

Способ осаждения пленок поликристаллического кремния, включающий осаждение на кремниевую подложку подслоя кремния толщиной 30-50 нм пиролитическим разложением моносилана при температуре 550-600°С, последующее доращивание подслоя до получения пленки поликристаллического кремния при температуре 600-650°С до заданной толщины, отличающийся тем, что, с целью улучшения качества пленок путем снижения в них уровня механических напряжений при одновременном снижении трудоемкости, подслой осаждают при давлении 2,66-13,3 Па.The method of deposition of polycrystalline silicon films, including the deposition on the silicon substrate of the silicon sublayer with a thickness of 30-50 nm by the pyrolytic decomposition of monosilane at a temperature of 550-600 ° C that, in order to improve the quality of the films by reducing the level of mechanical stresses in them while reducing the labor intensity, the sublayer is deposited at a pressure of 2.66-13.3 Pa.

SU4655025/25A 1989-02-27 1989-02-27 METHOD FOR DEPOSITING POLYCRYSTALLINE SILICON FILMS SU1597019A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU4655025/25A SU1597019A1 (en) 1989-02-27 1989-02-27 METHOD FOR DEPOSITING POLYCRYSTALLINE SILICON FILMS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU4655025/25A SU1597019A1 (en) 1989-02-27 1989-02-27 METHOD FOR DEPOSITING POLYCRYSTALLINE SILICON FILMS

Publications (1)

Publication Number Publication Date
SU1597019A1 true SU1597019A1 (en) 2012-03-20

Family

ID=60529674

Family Applications (1)

Application Number Title Priority Date Filing Date
SU4655025/25A SU1597019A1 (en) 1989-02-27 1989-02-27 METHOD FOR DEPOSITING POLYCRYSTALLINE SILICON FILMS

Country Status (1)

Country Link
SU (1) SU1597019A1 (en)

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