SG114566A1 - Liquid composition for removing a photoresist - Google Patents
Liquid composition for removing a photoresistInfo
- Publication number
- SG114566A1 SG114566A1 SG200205478A SG200205478A SG114566A1 SG 114566 A1 SG114566 A1 SG 114566A1 SG 200205478 A SG200205478 A SG 200205478A SG 200205478 A SG200205478 A SG 200205478A SG 114566 A1 SG114566 A1 SG 114566A1
- Authority
- SG
- Singapore
- Prior art keywords
- photoresist
- liquid composition
- composition
- liquid
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001304664A JP4639567B2 (en) | 2001-09-28 | 2001-09-28 | Photoresist stripping composition |
Publications (1)
Publication Number | Publication Date |
---|---|
SG114566A1 true SG114566A1 (en) | 2005-09-28 |
Family
ID=19124553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200205478A SG114566A1 (en) | 2001-09-28 | 2002-09-12 | Liquid composition for removing a photoresist |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4639567B2 (en) |
KR (1) | KR20030051188A (en) |
SG (1) | SG114566A1 (en) |
TW (1) | TW593224B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2591477A1 (en) | 2004-12-10 | 2006-06-22 | Mallinckrodt Baker, Inc. | Non-aqueous, non-corrosive microelectronic cleaning compositions containing polymeric corrosion inhibitors |
US7879782B2 (en) * | 2005-10-13 | 2011-02-01 | Air Products And Chemicals, Inc. | Aqueous cleaning composition and method for using same |
KR100718527B1 (en) * | 2006-04-12 | 2007-05-16 | 테크노세미켐 주식회사 | Stripper composition for negative photoresist |
KR20220056194A (en) * | 2019-08-30 | 2022-05-04 | 다우 글로벌 테크놀로지스 엘엘씨 | photoresist stripping composition |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6249355A (en) * | 1985-08-10 | 1987-03-04 | Nagase Sangyo Kk | Stripping agent composition |
EP0828197A1 (en) * | 1996-09-06 | 1998-03-11 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
JPH1184686A (en) * | 1997-09-01 | 1999-03-26 | Mitsubishi Gas Chem Co Inc | Resist removing agent composition |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08334905A (en) * | 1995-06-08 | 1996-12-17 | Tokyo Ohka Kogyo Co Ltd | Removing solution composition for resist |
JP3236220B2 (en) * | 1995-11-13 | 2001-12-10 | 東京応化工業株式会社 | Stripper composition for resist |
JP3891768B2 (en) * | 1999-12-28 | 2007-03-14 | 株式会社トクヤマ | Residual cleaning solution |
US6268115B1 (en) * | 2000-01-06 | 2001-07-31 | Air Products And Chemicals, Inc. | Use of alkylated polyamines in photoresist developers |
-
2001
- 2001-09-28 JP JP2001304664A patent/JP4639567B2/en not_active Expired - Lifetime
-
2002
- 2002-09-12 SG SG200205478A patent/SG114566A1/en unknown
- 2002-09-18 TW TW091121292A patent/TW593224B/en not_active IP Right Cessation
- 2002-09-26 KR KR1020020058314A patent/KR20030051188A/en active Search and Examination
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6249355A (en) * | 1985-08-10 | 1987-03-04 | Nagase Sangyo Kk | Stripping agent composition |
EP0828197A1 (en) * | 1996-09-06 | 1998-03-11 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
JPH1184686A (en) * | 1997-09-01 | 1999-03-26 | Mitsubishi Gas Chem Co Inc | Resist removing agent composition |
Also Published As
Publication number | Publication date |
---|---|
JP4639567B2 (en) | 2011-02-23 |
KR20030051188A (en) | 2003-06-25 |
JP2003107754A (en) | 2003-04-09 |
TW593224B (en) | 2004-06-21 |
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