SG11201804407UA - Polishing method - Google Patents
Polishing methodInfo
- Publication number
- SG11201804407UA SG11201804407UA SG11201804407UA SG11201804407UA SG11201804407UA SG 11201804407U A SG11201804407U A SG 11201804407UA SG 11201804407U A SG11201804407U A SG 11201804407UA SG 11201804407U A SG11201804407U A SG 11201804407UA SG 11201804407U A SG11201804407U A SG 11201804407UA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing method
- polishing
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/14—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015241203A JP6432497B2 (en) | 2015-12-10 | 2015-12-10 | Polishing method |
PCT/JP2016/004996 WO2017098696A1 (en) | 2015-12-10 | 2016-11-29 | Polishing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201804407UA true SG11201804407UA (en) | 2018-06-28 |
Family
ID=59012907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201804407UA SG11201804407UA (en) | 2015-12-10 | 2016-11-29 | Polishing method |
Country Status (8)
Country | Link |
---|---|
US (1) | US10300576B2 (en) |
JP (1) | JP6432497B2 (en) |
KR (1) | KR102299152B1 (en) |
CN (1) | CN108290266B (en) |
DE (1) | DE112016005236T5 (en) |
SG (1) | SG11201804407UA (en) |
TW (1) | TWI700146B (en) |
WO (1) | WO2017098696A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7020507B2 (en) | 2020-04-28 | 2022-02-16 | 信越半導体株式会社 | Cleaning method for semiconductor wafers |
CN112378546B (en) * | 2020-10-09 | 2023-03-24 | 上海新昇半导体科技有限公司 | Method for detecting temperature of high-temperature cavity |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2850803B2 (en) * | 1995-08-01 | 1999-01-27 | 信越半導体株式会社 | Wafer polishing method |
JP3449509B2 (en) * | 1995-08-25 | 2003-09-22 | 三菱住友シリコン株式会社 | Manufacturing method of epitaxial wafer |
JP3536618B2 (en) * | 1997-09-30 | 2004-06-14 | 信越半導体株式会社 | Method of improving surface roughness of silicon wafer and silicon wafer having improved surface roughness |
JP2000210860A (en) * | 1999-01-19 | 2000-08-02 | Tosoh Corp | Grinding method for silicon wafer |
US20020072296A1 (en) * | 2000-11-29 | 2002-06-13 | Muilenburg Michael J. | Abrasive article having a window system for polishing wafers, and methods |
JP2003086553A (en) * | 2001-09-13 | 2003-03-20 | Hitachi Cable Ltd | Semiconductor crystal wafer |
JP2003159645A (en) * | 2001-11-22 | 2003-06-03 | Sumitomo Mitsubishi Silicon Corp | Grinding device |
JP4683233B2 (en) * | 2004-09-30 | 2011-05-18 | 信越半導体株式会社 | Manufacturing method of semiconductor wafer |
TWI498954B (en) * | 2009-08-21 | 2015-09-01 | Sumco Corp | Method for manufacturing an epitaxial silicon wafer |
DE102010063179B4 (en) * | 2010-12-15 | 2012-10-04 | Siltronic Ag | Method for simultaneous material-removing machining of both sides of at least three semiconductor wafers |
DE102011082777A1 (en) * | 2011-09-15 | 2012-02-09 | Siltronic Ag | Method for double-sided polishing of semiconductor wafer e.g. silicon wafer, involves forming channel-shaped recesses in surface of polishing cloth of semiconductor wafer |
JP6311446B2 (en) * | 2014-05-19 | 2018-04-18 | 株式会社Sumco | Silicon wafer manufacturing method |
TWM489383U (en) * | 2014-06-26 | 2014-11-01 | Wha Yu Industrial Co Ltd | High gain dipole circuit board antenna |
-
2015
- 2015-12-10 JP JP2015241203A patent/JP6432497B2/en active Active
-
2016
- 2016-11-29 DE DE112016005236.7T patent/DE112016005236T5/en active Pending
- 2016-11-29 SG SG11201804407UA patent/SG11201804407UA/en unknown
- 2016-11-29 WO PCT/JP2016/004996 patent/WO2017098696A1/en active Application Filing
- 2016-11-29 KR KR1020187015957A patent/KR102299152B1/en active IP Right Grant
- 2016-11-29 US US15/777,745 patent/US10300576B2/en active Active
- 2016-11-29 CN CN201680067980.4A patent/CN108290266B/en active Active
- 2016-12-01 TW TW105139687A patent/TWI700146B/en active
Also Published As
Publication number | Publication date |
---|---|
KR102299152B1 (en) | 2021-09-07 |
TWI700146B (en) | 2020-08-01 |
WO2017098696A1 (en) | 2017-06-15 |
DE112016005236T5 (en) | 2018-07-26 |
JP6432497B2 (en) | 2018-12-05 |
US10300576B2 (en) | 2019-05-28 |
CN108290266B (en) | 2020-06-05 |
KR20180092966A (en) | 2018-08-20 |
TW201720578A (en) | 2017-06-16 |
CN108290266A (en) | 2018-07-17 |
US20180369984A1 (en) | 2018-12-27 |
JP2017104946A (en) | 2017-06-15 |
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