SG11201804407UA - Polishing method - Google Patents

Polishing method

Info

Publication number
SG11201804407UA
SG11201804407UA SG11201804407UA SG11201804407UA SG11201804407UA SG 11201804407U A SG11201804407U A SG 11201804407UA SG 11201804407U A SG11201804407U A SG 11201804407UA SG 11201804407U A SG11201804407U A SG 11201804407UA SG 11201804407U A SG11201804407U A SG 11201804407UA
Authority
SG
Singapore
Prior art keywords
polishing method
polishing
Prior art date
Application number
SG11201804407UA
Inventor
Masaaki Oseki
Michito Sato
Kaoru Ishii
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of SG11201804407UA publication Critical patent/SG11201804407UA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/015Temperature control
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/14Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
SG11201804407UA 2015-12-10 2016-11-29 Polishing method SG11201804407UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015241203A JP6432497B2 (en) 2015-12-10 2015-12-10 Polishing method
PCT/JP2016/004996 WO2017098696A1 (en) 2015-12-10 2016-11-29 Polishing method

Publications (1)

Publication Number Publication Date
SG11201804407UA true SG11201804407UA (en) 2018-06-28

Family

ID=59012907

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201804407UA SG11201804407UA (en) 2015-12-10 2016-11-29 Polishing method

Country Status (8)

Country Link
US (1) US10300576B2 (en)
JP (1) JP6432497B2 (en)
KR (1) KR102299152B1 (en)
CN (1) CN108290266B (en)
DE (1) DE112016005236T5 (en)
SG (1) SG11201804407UA (en)
TW (1) TWI700146B (en)
WO (1) WO2017098696A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7020507B2 (en) 2020-04-28 2022-02-16 信越半導体株式会社 Cleaning method for semiconductor wafers
CN112378546B (en) * 2020-10-09 2023-03-24 上海新昇半导体科技有限公司 Method for detecting temperature of high-temperature cavity

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2850803B2 (en) * 1995-08-01 1999-01-27 信越半導体株式会社 Wafer polishing method
JP3449509B2 (en) * 1995-08-25 2003-09-22 三菱住友シリコン株式会社 Manufacturing method of epitaxial wafer
JP3536618B2 (en) * 1997-09-30 2004-06-14 信越半導体株式会社 Method of improving surface roughness of silicon wafer and silicon wafer having improved surface roughness
JP2000210860A (en) * 1999-01-19 2000-08-02 Tosoh Corp Grinding method for silicon wafer
US20020072296A1 (en) * 2000-11-29 2002-06-13 Muilenburg Michael J. Abrasive article having a window system for polishing wafers, and methods
JP2003086553A (en) * 2001-09-13 2003-03-20 Hitachi Cable Ltd Semiconductor crystal wafer
JP2003159645A (en) * 2001-11-22 2003-06-03 Sumitomo Mitsubishi Silicon Corp Grinding device
JP4683233B2 (en) * 2004-09-30 2011-05-18 信越半導体株式会社 Manufacturing method of semiconductor wafer
TWI498954B (en) * 2009-08-21 2015-09-01 Sumco Corp Method for manufacturing an epitaxial silicon wafer
DE102010063179B4 (en) * 2010-12-15 2012-10-04 Siltronic Ag Method for simultaneous material-removing machining of both sides of at least three semiconductor wafers
DE102011082777A1 (en) * 2011-09-15 2012-02-09 Siltronic Ag Method for double-sided polishing of semiconductor wafer e.g. silicon wafer, involves forming channel-shaped recesses in surface of polishing cloth of semiconductor wafer
JP6311446B2 (en) * 2014-05-19 2018-04-18 株式会社Sumco Silicon wafer manufacturing method
TWM489383U (en) * 2014-06-26 2014-11-01 Wha Yu Industrial Co Ltd High gain dipole circuit board antenna

Also Published As

Publication number Publication date
KR102299152B1 (en) 2021-09-07
TWI700146B (en) 2020-08-01
WO2017098696A1 (en) 2017-06-15
DE112016005236T5 (en) 2018-07-26
JP6432497B2 (en) 2018-12-05
US10300576B2 (en) 2019-05-28
CN108290266B (en) 2020-06-05
KR20180092966A (en) 2018-08-20
TW201720578A (en) 2017-06-16
CN108290266A (en) 2018-07-17
US20180369984A1 (en) 2018-12-27
JP2017104946A (en) 2017-06-15

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