SG11201600129XA - Plasma processing apparatus and plasma processing method - Google Patents

Plasma processing apparatus and plasma processing method

Info

Publication number
SG11201600129XA
SG11201600129XA SG11201600129XA SG11201600129XA SG11201600129XA SG 11201600129X A SG11201600129X A SG 11201600129XA SG 11201600129X A SG11201600129X A SG 11201600129XA SG 11201600129X A SG11201600129X A SG 11201600129XA SG 11201600129X A SG11201600129X A SG 11201600129XA
Authority
SG
Singapore
Prior art keywords
plasma processing
processing apparatus
processing method
plasma
processing
Prior art date
Application number
SG11201600129XA
Inventor
Koji Maruyama
Masato Horiguchi
Tetsuri Matsuki
Akira Koshiishi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG11201600129XA publication Critical patent/SG11201600129XA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • H01J37/32165Plural frequencies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357Generation remote from the workpiece, e.g. down-stream
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422Arrangement for selecting ions or species in the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32568Relative arrangement or disposition of electrodes; moving means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
SG11201600129XA 2013-08-09 2014-07-03 Plasma processing apparatus and plasma processing method SG11201600129XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013166908 2013-08-09
PCT/JP2014/067844 WO2015019765A1 (en) 2013-08-09 2014-07-03 Plasma processing device and plasma processing method

Publications (1)

Publication Number Publication Date
SG11201600129XA true SG11201600129XA (en) 2016-02-26

Family

ID=52461104

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201600129XA SG11201600129XA (en) 2013-08-09 2014-07-03 Plasma processing apparatus and plasma processing method

Country Status (8)

Country Link
US (1) US9685305B2 (en)
EP (1) EP3032925B1 (en)
JP (1) JP6169701B2 (en)
KR (1) KR101809150B1 (en)
CN (1) CN105379428B (en)
SG (1) SG11201600129XA (en)
TW (1) TWI645443B (en)
WO (1) WO2015019765A1 (en)

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US8129288B2 (en) * 2008-05-02 2012-03-06 Intermolecular, Inc. Combinatorial plasma enhanced deposition techniques
JP6516542B2 (en) * 2015-04-20 2019-05-22 東京エレクトロン株式会社 Method of etching a layer to be etched
WO2017170411A1 (en) 2016-03-29 2017-10-05 東京エレクトロン株式会社 Method for processing object to be processed
JP6784530B2 (en) * 2016-03-29 2020-11-11 東京エレクトロン株式会社 How to process the object to be processed
KR101798373B1 (en) 2016-05-03 2017-11-17 (주)브이앤아이솔루션 Dielectric window supporting structure for inductively coupled plasma processing apparatus
US9644271B1 (en) * 2016-05-13 2017-05-09 Lam Research Corporation Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication
US10418226B2 (en) * 2016-05-27 2019-09-17 Toshiba Mitsubishi-Electric Industrial Systems Corporation Activated gas generation apparatus
EP3563401B1 (en) * 2016-12-27 2022-11-23 Evatec AG Rf capacitive coupled dual frequency etch reactor
CN106653660B (en) * 2017-01-25 2019-08-20 重庆京东方光电科技有限公司 A kind of gas flow control device and plasma etch apparatus
JP7052796B2 (en) * 2017-07-28 2022-04-12 住友電気工業株式会社 Shower head and its manufacturing method
KR102443036B1 (en) * 2018-01-15 2022-09-14 삼성전자주식회사 Plasma processing apparatus
JP6851706B2 (en) * 2018-05-30 2021-03-31 東芝三菱電機産業システム株式会社 Inert gas generator
JP7194937B2 (en) * 2018-12-06 2022-12-23 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP7190948B2 (en) 2019-03-22 2022-12-16 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
CN112017936B (en) * 2019-05-28 2024-05-31 东京毅力科创株式会社 Plasma processing apparatus
WO2021095120A1 (en) 2019-11-12 2021-05-20 東芝三菱電機産業システム株式会社 Activated gas generation device
EP3886540B1 (en) 2019-11-27 2023-05-03 Toshiba Mitsubishi-Electric Industrial Systems Corporation Active gas generation device
JP2022102490A (en) * 2020-12-25 2022-07-07 東京エレクトロン株式会社 Plasma processing device and cleaning method

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US6165311A (en) 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US5248371A (en) 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
JPH07226395A (en) 1994-02-15 1995-08-22 Matsushita Electric Ind Co Ltd Vacuum plasma treatment apparatus
JPH08279495A (en) * 1995-02-07 1996-10-22 Seiko Epson Corp Method and system for plasma processing
JP3317209B2 (en) 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 Plasma processing apparatus and plasma processing method
JP2001230208A (en) * 2000-02-16 2001-08-24 Komatsu Ltd Surface-treating apparatus
JP4212215B2 (en) * 2000-03-24 2009-01-21 株式会社小松製作所 Surface treatment equipment
US6875366B2 (en) 2000-09-12 2005-04-05 Hitachi, Ltd. Plasma processing apparatus and method with controlled biasing functions
US7951262B2 (en) * 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
JP4773079B2 (en) * 2004-11-26 2011-09-14 株式会社日立ハイテクノロジーズ Control method of plasma processing apparatus
US20080193673A1 (en) 2006-12-05 2008-08-14 Applied Materials, Inc. Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
CN101911804B (en) * 2008-01-04 2013-06-05 交互数字专利控股公司 Method and apparatus for performing WTRU state transition with enhanced RACH in HSPA systems
JP5319150B2 (en) * 2008-03-31 2013-10-16 東京エレクトロン株式会社 Plasma processing apparatus, plasma processing method, and computer-readable storage medium
KR100978859B1 (en) 2008-07-11 2010-08-31 피에스케이 주식회사 Apparatus for generating hollow cathode plasma and apparatus for treating a large area substrate by hollow cathode plasma
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Also Published As

Publication number Publication date
EP3032925A1 (en) 2016-06-15
EP3032925A4 (en) 2017-03-22
WO2015019765A1 (en) 2015-02-12
KR101809150B1 (en) 2017-12-14
TWI645443B (en) 2018-12-21
CN105379428B (en) 2017-07-04
EP3032925B1 (en) 2020-05-13
KR20160040512A (en) 2016-04-14
JPWO2015019765A1 (en) 2017-03-02
TW201511077A (en) 2015-03-16
JP6169701B2 (en) 2017-07-26
US20160163515A1 (en) 2016-06-09
CN105379428A (en) 2016-03-02
US9685305B2 (en) 2017-06-20

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