SG10201709524QA - Chemical sensor package for highly pressured environment - Google Patents
Chemical sensor package for highly pressured environmentInfo
- Publication number
- SG10201709524QA SG10201709524QA SG10201709524QA SG10201709524QA SG10201709524QA SG 10201709524Q A SG10201709524Q A SG 10201709524QA SG 10201709524Q A SG10201709524Q A SG 10201709524QA SG 10201709524Q A SG10201709524Q A SG 10201709524QA SG 10201709524Q A SG10201709524Q A SG 10201709524QA
- Authority
- SG
- Singapore
- Prior art keywords
- sensor package
- chemical sensor
- highly pressured
- pressured environment
- environment
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/315—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the encapsulation having a cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Molecular Biology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Measuring Fluid Pressure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG2013096045 | 2013-12-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201709524QA true SG10201709524QA (en) | 2018-01-30 |
Family
ID=53545461
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201709524QA SG10201709524QA (en) | 2013-12-26 | 2014-12-26 | Chemical sensor package for highly pressured environment |
SG10201408698SA SG10201408698SA (en) | 2013-12-26 | 2014-12-26 | Chemical Sensor Package For Highly Pressured Environment |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201408698SA SG10201408698SA (en) | 2013-12-26 | 2014-12-26 | Chemical Sensor Package For Highly Pressured Environment |
Country Status (2)
Country | Link |
---|---|
US (2) | US9431315B2 (en) |
SG (2) | SG10201709524QA (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG10201709524QA (en) | 2013-12-26 | 2018-01-30 | Agency Science Tech & Res | Chemical sensor package for highly pressured environment |
KR102497583B1 (en) | 2015-10-27 | 2023-02-10 | 삼성전자주식회사 | Semiconductor devices having flexible interconnection and methods for fabricating the same |
KR102632563B1 (en) | 2016-08-05 | 2024-02-02 | 삼성전자주식회사 | Semiconductor Package |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5632854A (en) * | 1995-08-21 | 1997-05-27 | Motorola, Inc. | Pressure sensor method of fabrication |
US6790599B1 (en) * | 1999-07-15 | 2004-09-14 | Microbionics, Inc. | Microfluidic devices and manufacture thereof |
US6548895B1 (en) * | 2001-02-21 | 2003-04-15 | Sandia Corporation | Packaging of electro-microfluidic devices |
WO2003019617A2 (en) * | 2001-08-24 | 2003-03-06 | Schott Glas | Method for producing electronic components |
EP1419534A2 (en) * | 2001-08-24 | 2004-05-19 | Schott Glas | Method for producing contacts and printed circuit packages |
DE102005052713A1 (en) * | 2005-11-04 | 2007-05-16 | Clondiag Chip Tech Gmbh | Apparatus and method for detecting molecular interactions |
US7538401B2 (en) * | 2005-05-03 | 2009-05-26 | Rosemount Aerospace Inc. | Transducer for use in harsh environments |
US7875942B2 (en) * | 2007-01-04 | 2011-01-25 | Stmicroelectronics, S.R.L. | Electronic device including MEMS devices and holed substrates, in particular of the LGA or BGA type |
ITMI20070099A1 (en) * | 2007-01-24 | 2008-07-25 | St Microelectronics Srl | ELECTRONIC DEVICE INCLUDING DIFFERENTIAL SENSOR DEVICES MEMS AND SUBSTRATES LAUNDRY |
US8945066B2 (en) * | 2009-11-06 | 2015-02-03 | Crisi Medical Systems, Inc. | Medication injection site and data collection system |
US20110192121A1 (en) * | 2010-02-08 | 2011-08-11 | Sealed Air Corporation (Us) | Inflatable Mailer, Apparatus, and Method for Making the Same |
US9389158B2 (en) * | 2010-02-12 | 2016-07-12 | Dan Angelescu | Passive micro-vessel and sensor |
US8981789B2 (en) * | 2012-04-16 | 2015-03-17 | Sharp Kabushiki Kaisha | Active matrix device and method of driving the same |
US9010190B2 (en) * | 2012-04-20 | 2015-04-21 | Rosemount Aerospace Inc. | Stress isolated MEMS structures and methods of manufacture |
US9447895B2 (en) * | 2012-05-25 | 2016-09-20 | The Board Of Trustees Of The University Of Illinois | Microfluidic pressure amplifier circuits and electrostatic gates for pneumatic microsystems |
SG10201709524QA (en) | 2013-12-26 | 2018-01-30 | Agency Science Tech & Res | Chemical sensor package for highly pressured environment |
-
2014
- 2014-12-26 SG SG10201709524QA patent/SG10201709524QA/en unknown
- 2014-12-26 US US14/583,261 patent/US9431315B2/en not_active Expired - Fee Related
- 2014-12-26 SG SG10201408698SA patent/SG10201408698SA/en unknown
-
2016
- 2016-07-26 US US15/219,986 patent/US9841399B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9431315B2 (en) | 2016-08-30 |
US9841399B2 (en) | 2017-12-12 |
SG10201408698SA (en) | 2015-07-30 |
US20170003247A1 (en) | 2017-01-05 |
US20150206816A1 (en) | 2015-07-23 |
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