NL6806497A - - Google Patents

Info

Publication number
NL6806497A
NL6806497A NL6806497A NL6806497A NL6806497A NL 6806497 A NL6806497 A NL 6806497A NL 6806497 A NL6806497 A NL 6806497A NL 6806497 A NL6806497 A NL 6806497A NL 6806497 A NL6806497 A NL 6806497A
Authority
NL
Netherlands
Application number
NL6806497A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6806497A publication Critical patent/NL6806497A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/12Gaseous compositions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/054Flat sheets-substrates
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/974Substrate surface preparation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Sealing Of Bearings (AREA)
NL6806497A 1967-05-08 1968-05-08 NL6806497A (xx)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US63693867A 1967-05-08 1967-05-08
US63692867A 1967-05-08 1967-05-08

Publications (1)

Publication Number Publication Date
NL6806497A true NL6806497A (xx) 1968-11-11

Family

ID=27092726

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6806497A NL6806497A (xx) 1967-05-08 1968-05-08

Country Status (6)

Country Link
US (2) US3479680A (xx)
BE (1) BE714771A (xx)
DE (1) DE1771301B1 (xx)
FR (1) FR1563406A (xx)
GB (1) GB1180187A (xx)
NL (1) NL6806497A (xx)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
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NL7003431A (xx) * 1970-03-11 1971-09-14
US3816166A (en) * 1970-03-11 1974-06-11 Philips Corp Vapor depositing method
FR2130353A1 (en) * 1971-03-19 1972-11-03 Itt Gas-etching for silicon nitride deposits - by glow discharge technique
FR2138539B1 (xx) * 1971-05-27 1973-05-25 Alsthom
US3900363A (en) * 1972-11-15 1975-08-19 Nippon Columbia Method of making crystal
LU67513A1 (xx) * 1972-11-20 1973-07-13
US3854443A (en) * 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films
US3964124A (en) * 1974-12-30 1976-06-22 Midwest-Precision Corporation Sealed caster
US4243865A (en) * 1976-05-14 1981-01-06 Data General Corporation Process for treating material in plasma environment
US4348784A (en) * 1980-06-23 1982-09-14 Stewart-Warner Corporation Swivel type caster with seal and lubrication ring
US4421576A (en) * 1981-09-14 1983-12-20 Rca Corporation Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
US4494271A (en) * 1981-11-30 1985-01-22 Perlin Materials Handling Development Co. Caster having a three piece encapsulating bearing assembly
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
DE3345353A1 (de) * 1983-12-15 1985-08-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren und metallisierung einer keramikoberflaeche
US4738272A (en) * 1984-05-21 1988-04-19 Mcconnell Christopher F Vessel and system for treating wafers with fluids
FR2574816B1 (fr) * 1984-12-14 1987-02-20 Cogema Procede de fabrication de pieces en forme par elimination chimique selective d'un noyau
JP2720966B2 (ja) 1987-07-13 1998-03-04 セントラル硝子株式会社 薄膜を付着した部品の再生利用方法
US5159267A (en) * 1990-09-28 1992-10-27 Sematech, Inc. Pneumatic energy fluxmeter
US5159264A (en) * 1991-10-02 1992-10-27 Sematech, Inc. Pneumatic energy fluxmeter
US5461753A (en) * 1993-10-22 1995-10-31 Albion Industries, Inc. Seal for swivel caster assembly
US5534107A (en) * 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
JPH0864559A (ja) * 1994-06-14 1996-03-08 Fsi Internatl Inc 基板面から不要な物質を除去する方法
US6015503A (en) * 1994-06-14 2000-01-18 Fsi International, Inc. Method and apparatus for surface conditioning
US5479677A (en) * 1994-09-07 1996-01-02 Chong; Ping-Feng Caster device
US5635102A (en) 1994-09-28 1997-06-03 Fsi International Highly selective silicon oxide etching method
US6849471B2 (en) 2003-03-28 2005-02-01 Reflectivity, Inc. Barrier layers for microelectromechanical systems
US6083413A (en) * 1995-10-19 2000-07-04 Massachusetts Institute Of Technology Metals removal process
US5817174A (en) * 1995-12-15 1998-10-06 Kabushiki Kaisha Toshiba Semiconductor substrate and method of treating semiconductor substrate
US7025831B1 (en) 1995-12-21 2006-04-11 Fsi International, Inc. Apparatus for surface conditioning
US6077451A (en) * 1996-03-28 2000-06-20 Kabushiki Kaisha Toshiba Method and apparatus for etching of silicon materials
JP3055471B2 (ja) * 1996-10-03 2000-06-26 日本電気株式会社 半導体基板の製造方法及びその製造装置
US5954884A (en) * 1997-03-17 1999-09-21 Fsi International Inc. UV/halogen metals removal process
US6165273A (en) 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
US6465374B1 (en) 1997-10-21 2002-10-15 Fsi International, Inc. Method of surface preparation
KR100271763B1 (ko) * 1997-12-05 2001-02-01 윤종용 폴리실리콘식각방법및그식각장치
US7041224B2 (en) * 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
US6949202B1 (en) 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
US6942811B2 (en) * 1999-10-26 2005-09-13 Reflectivity, Inc Method for achieving improved selectivity in an etching process
US6960305B2 (en) * 1999-10-26 2005-11-01 Reflectivity, Inc Methods for forming and releasing microelectromechanical structures
US7019376B2 (en) * 2000-08-11 2006-03-28 Reflectivity, Inc Micromirror array device with a small pitch size
WO2002095800A2 (en) * 2001-05-22 2002-11-28 Reflectivity, Inc. A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
US7189332B2 (en) * 2001-09-17 2007-03-13 Texas Instruments Incorporated Apparatus and method for detecting an endpoint in a vapor phase etch
US20030073302A1 (en) * 2001-10-12 2003-04-17 Reflectivity, Inc., A California Corporation Methods for formation of air gap interconnects
US6965468B2 (en) * 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US7027200B2 (en) * 2002-03-22 2006-04-11 Reflectivity, Inc Etching method used in fabrications of microstructures
WO2004026804A1 (en) 2002-09-20 2004-04-01 Integrated Dna Technologies, Inc. Anthraquinone quencher dyes, their methods of preparation and use
US6913942B2 (en) 2003-03-28 2005-07-05 Reflectvity, Inc Sacrificial layers for use in fabrications of microelectromechanical devices
JP4204374B2 (ja) * 2003-04-21 2009-01-07 信越石英株式会社 石英ガラス治具の製造方法
US20040239062A1 (en) * 2003-05-30 2004-12-02 Red Lan Stroller with a rotatable seat disposed rotatably on a stroller frame through bearings and connected fixedly to a fork member
US6980347B2 (en) * 2003-07-03 2005-12-27 Reflectivity, Inc Micromirror having reduced space between hinge and mirror plate of the micromirror
US7645704B2 (en) * 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures
DE102004036803A1 (de) * 2004-07-29 2006-03-23 Robert Bosch Gmbh Verfahren zum Ätzen einer Schicht auf einem Substrat
CN101880880B (zh) * 2009-05-06 2011-07-27 中国科学院微电子研究所 二氧化碳缓冲硅片打孔装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2787804A (en) * 1955-03-23 1957-04-09 Faultless Caster Corp Caster bearing seal and damper
BE575793A (xx) * 1959-02-17
DE1202616B (de) * 1962-02-23 1965-10-07 Siemens Ag Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
US3399421A (en) * 1965-03-22 1968-09-03 Thomas A. Crawford Sanitary seal for casters

Also Published As

Publication number Publication date
US3511727A (en) 1970-05-12
FR1563406A (xx) 1969-04-11
GB1180187A (en) 1970-02-04
DE1771301B1 (de) 1971-10-07
BE714771A (xx) 1968-11-07
US3479680A (en) 1969-11-25

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