NL181830C - LAYERED SYSTEM. - Google Patents
LAYERED SYSTEM.Info
- Publication number
- NL181830C NL181830C NLAANVRAGE7414702,A NL7414702A NL181830C NL 181830 C NL181830 C NL 181830C NL 7414702 A NL7414702 A NL 7414702A NL 181830 C NL181830 C NL 181830C
- Authority
- NL
- Netherlands
- Prior art keywords
- layered system
- layered
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/066—Gp III-V liquid phase epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/097—Lattice strain and defects
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/938—Lattice strain control or utilization
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41466473A | 1973-11-12 | 1973-11-12 | |
US05/463,871 US3958263A (en) | 1973-11-12 | 1974-04-25 | Stress reduction in algaas-algaasp multilayer structures |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7414702A NL7414702A (en) | 1975-05-14 |
NL181830B NL181830B (en) | 1987-06-01 |
NL181830C true NL181830C (en) | 1987-11-02 |
Family
ID=27022651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7414702,A NL181830C (en) | 1973-11-12 | 1974-11-11 | LAYERED SYSTEM. |
Country Status (8)
Country | Link |
---|---|
US (1) | US3958263A (en) |
JP (1) | JPS5818792B2 (en) |
CA (1) | CA1040514A (en) |
DE (1) | DE2453347C2 (en) |
FR (1) | FR2251101B1 (en) |
GB (1) | GB1492808A (en) |
IT (1) | IT1025701B (en) |
NL (1) | NL181830C (en) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4121177A (en) * | 1973-05-28 | 1978-10-17 | Hitachi, Ltd. | Semiconductor device and a method of fabricating the same |
US4213805A (en) * | 1973-05-28 | 1980-07-22 | Hitachi, Ltd. | Liquid phase epitaxy method of forming a filimentary laser device |
JPS52109884A (en) * | 1976-03-11 | 1977-09-14 | Nec Corp | Stripe type hetero junction semoonductor laser |
US4032951A (en) * | 1976-04-13 | 1977-06-28 | Bell Telephone Laboratories, Incorporated | Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses |
US4037111A (en) * | 1976-06-08 | 1977-07-19 | Bell Telephone Laboratories, Incorporated | Mask structures for X-ray lithography |
FR2435816A1 (en) * | 1978-09-08 | 1980-04-04 | Radiotechnique Compelec | METHOD FOR PRODUCING, BY EPITAXY, A SEMICONDUCTOR DEVICE WITH MULTI-LAYERED STRUCTURE AND APPLICATION THEREOF |
FR2447612A1 (en) * | 1979-01-26 | 1980-08-22 | Thomson Csf | HETEROJUNCTION SEMICONDUCTOR COMPONENT |
US4372791A (en) * | 1979-04-30 | 1983-02-08 | Massachusetts Institute Of Technology | Method for fabricating DH lasers |
US4319937A (en) * | 1980-11-12 | 1982-03-16 | University Of Illinois Foundation | Homogeneous liquid phase epitaxial growth of heterojunction materials |
FR2502847A1 (en) * | 1981-03-25 | 1982-10-01 | Western Electric Co | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING CURRENT PIPE STRUCTURE |
US4678266A (en) * | 1983-06-29 | 1987-07-07 | Stauffer Chemical Company | Use of pnictide films for wave-guiding in opto-electronic devices |
IL78840A0 (en) * | 1985-10-17 | 1986-09-30 | Holobeam | Lattice-graded epilayer |
US5294808A (en) * | 1992-10-23 | 1994-03-15 | Cornell Research Foundation, Inc. | Pseudomorphic and dislocation free heteroepitaxial structures |
JPH0766455A (en) * | 1993-08-24 | 1995-03-10 | Shin Etsu Handotai Co Ltd | Semiconductor light emitting device |
JPH10214993A (en) * | 1997-01-29 | 1998-08-11 | Hitachi Cable Ltd | Epitaxial wafer and its manufacture as well as light-emitting diode |
US6327293B1 (en) * | 1998-08-12 | 2001-12-04 | Coherent, Inc. | Optically-pumped external-mirror vertical-cavity semiconductor-laser |
US6636538B1 (en) * | 1999-03-29 | 2003-10-21 | Cutting Edge Optronics, Inc. | Laser diode packaging |
DE19918651A1 (en) * | 1999-04-16 | 2000-10-19 | Friedrich Schiller Uni Jena Bu | LED, e.g. for displays, lighting and data transmission, has thick epitaxial layers with an active zone delimited by deep separation regions of crystal structure irreversibly damaged by high energy ion irradiation |
US6524971B1 (en) | 1999-12-17 | 2003-02-25 | Agere Systems, Inc. | Method of deposition of films |
US7305016B2 (en) * | 2005-03-10 | 2007-12-04 | Northrop Grumman Corporation | Laser diode package with an internal fluid cooling channel |
US20070235839A1 (en) * | 2005-08-24 | 2007-10-11 | Nlight Photonics Corporation | Semiconductor devices utilizing AlGaAsP |
US20070053396A1 (en) * | 2005-08-24 | 2007-03-08 | Nlight Photonics Corporation | Semiconductor lasers utilizing AlGaAsP |
US7656915B2 (en) * | 2006-07-26 | 2010-02-02 | Northrop Grumman Space & Missions Systems Corp. | Microchannel cooler for high efficiency laser diode heat extraction |
US20080056314A1 (en) * | 2006-08-31 | 2008-03-06 | Northrop Grumman Corporation | High-power laser-diode package system |
JP2008140887A (en) * | 2006-11-30 | 2008-06-19 | Mitsubishi Electric Corp | Semiconductor laser |
DE102007030062A1 (en) * | 2007-06-29 | 2009-01-02 | Osram Opto Semiconductors Gmbh | Monolithically integrated laser diode chip with a construction as a multi-beam laser diode |
US7724791B2 (en) * | 2008-01-18 | 2010-05-25 | Northrop Grumman Systems Corporation | Method of manufacturing laser diode packages and arrays |
US8345720B2 (en) * | 2009-07-28 | 2013-01-01 | Northrop Grumman Systems Corp. | Laser diode ceramic cooler having circuitry for control and feedback of laser diode performance |
US9590388B2 (en) | 2011-01-11 | 2017-03-07 | Northrop Grumman Systems Corp. | Microchannel cooler for a single laser diode emitter based system |
US8937976B2 (en) | 2012-08-15 | 2015-01-20 | Northrop Grumman Systems Corp. | Tunable system for generating an optical pulse based on a double-pass semiconductor optical amplifier |
CN110190512A (en) * | 2019-05-31 | 2019-08-30 | 度亘激光技术(苏州)有限公司 | The preparation method and GaAs base VCSEL of DBR |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3812516A (en) * | 1970-05-01 | 1974-05-21 | Bell Telephone Labor Inc | Spontaneously emitting hetero-structure junction diodes |
JPS5527474B2 (en) * | 1971-12-17 | 1980-07-21 | ||
US3838359A (en) * | 1973-11-23 | 1974-09-24 | Bell Telephone Labor Inc | Gain asymmetry in heterostructure junction lasers operating in a fundamental transverse mode |
-
1974
- 1974-04-25 US US05/463,871 patent/US3958263A/en not_active Expired - Lifetime
- 1974-09-05 CA CA208,566A patent/CA1040514A/en not_active Expired
- 1974-11-08 IT IT29253/74A patent/IT1025701B/en active
- 1974-11-08 FR FR7437210A patent/FR2251101B1/fr not_active Expired
- 1974-11-11 DE DE2453347A patent/DE2453347C2/en not_active Expired
- 1974-11-11 NL NLAANVRAGE7414702,A patent/NL181830C/en not_active IP Right Cessation
- 1974-11-12 GB GB48843/74A patent/GB1492808A/en not_active Expired
- 1974-11-12 JP JP49129615A patent/JPS5818792B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5818792B2 (en) | 1983-04-14 |
FR2251101A1 (en) | 1975-06-06 |
FR2251101B1 (en) | 1979-02-23 |
GB1492808A (en) | 1977-11-23 |
JPS5081486A (en) | 1975-07-02 |
US3958263A (en) | 1976-05-18 |
NL181830B (en) | 1987-06-01 |
IT1025701B (en) | 1978-08-30 |
CA1040514A (en) | 1978-10-17 |
DE2453347A1 (en) | 1975-05-15 |
DE2453347C2 (en) | 1984-06-20 |
NL7414702A (en) | 1975-05-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V1 | Lapsed because of non-payment of the annual fee |