NL121810C - - Google Patents

Info

Publication number
NL121810C
NL121810C NL121810DA NL121810C NL 121810 C NL121810 C NL 121810C NL 121810D A NL121810D A NL 121810DA NL 121810 C NL121810 C NL 121810C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL121810C publication Critical patent/NL121810C/xx

Links

Classifications

    • H01L29/73—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H01L27/082—
    • H01L29/00—
    • H01L29/86—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/167—Two diffusions in one hole
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
NL121810D 1955-11-04 NL121810C (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US544897A US2858489A (en) 1955-11-04 1955-11-04 Power transistor
US810388A US3025589A (en) 1955-11-04 1959-05-01 Method of manufacturing semiconductor devices
US30256A US3064167A (en) 1955-11-04 1960-05-19 Semiconductor device

Publications (1)

Publication Number Publication Date
NL121810C true NL121810C (de)

Family

ID=27363619

Family Applications (3)

Application Number Title Priority Date Filing Date
NL121810D NL121810C (de) 1955-11-04
NL251064D NL251064A (de) 1955-11-04
NL6605653A NL6605653A (de) 1955-11-04 1966-04-27

Family Applications After (2)

Application Number Title Priority Date Filing Date
NL251064D NL251064A (de) 1955-11-04
NL6605653A NL6605653A (de) 1955-11-04 1966-04-27

Country Status (5)

Country Link
US (3) US2858489A (de)
CH (3) CH384082A (de)
DE (1) DE1197548C2 (de)
GB (2) GB843409A (de)
NL (3) NL6605653A (de)

Families Citing this family (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
BE560551A (de) * 1956-09-05
US2967985A (en) * 1957-04-11 1961-01-10 Shockley Transistor structure
BE570082A (de) * 1957-08-07 1900-01-01
GB945742A (de) * 1959-02-06 Texas Instruments Inc
DE1207013B (de) * 1959-05-06 1965-12-16 Texas Instruments Inc Mikrominiaturisierte integrierte Halbleiter-schaltungsanordnung und Verfahren zu deren Herstellung
NL252131A (de) * 1959-06-30
US3117260A (en) * 1959-09-11 1964-01-07 Fairchild Camera Instr Co Semiconductor circuit complexes
NL113570C (de) * 1959-11-25
US3234440A (en) * 1959-12-30 1966-02-08 Ibm Semiconductor device fabrication
NL265382A (de) * 1960-03-08
NL269092A (de) * 1960-09-09 1900-01-01
US3278811A (en) * 1960-10-04 1966-10-11 Hayakawa Denki Kogyo Kabushiki Radiation energy transducing device
US3193418A (en) * 1960-10-27 1965-07-06 Fairchild Camera Instr Co Semiconductor device fabrication
US3189798A (en) * 1960-11-29 1965-06-15 Westinghouse Electric Corp Monolithic semiconductor device and method of preparing same
US3151004A (en) * 1961-03-30 1964-09-29 Rca Corp Semiconductor devices
US3166448A (en) * 1961-04-07 1965-01-19 Clevite Corp Method for producing rib transistor
NL274830A (de) * 1961-04-12
GB967002A (en) * 1961-05-05 1964-08-19 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3227933A (en) * 1961-05-17 1966-01-04 Fairchild Camera Instr Co Diode and contact structure
US3177414A (en) * 1961-07-26 1965-04-06 Nippon Electric Co Device comprising a plurality of transistors
US3233305A (en) * 1961-09-26 1966-02-08 Ibm Switching transistors with controlled emitter-base breakdown
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
US3330030A (en) * 1961-09-29 1967-07-11 Texas Instruments Inc Method of making semiconductor devices
US3189973A (en) * 1961-11-27 1965-06-22 Bell Telephone Labor Inc Method of fabricating a semiconductor device
DE1639051C2 (de) * 1961-12-01 1981-07-02 Western Electric Co., Inc., 10038 New York, N.Y. Verfahren zum Herstellen eines ohmschen Kontakts an einem Silicium-Halbleiterkörper
NL286507A (de) * 1961-12-11
US3184657A (en) * 1962-01-05 1965-05-18 Fairchild Camera Instr Co Nested region transistor configuration
US3200019A (en) * 1962-01-19 1965-08-10 Rca Corp Method for making a semiconductor device
DE1444521B2 (de) * 1962-02-01 1971-02-25 Siemens AG, 1000 Berlin u 8000 München Verfahren zur herstellung einer halbleiteranordnung
US3265542A (en) * 1962-03-15 1966-08-09 Philco Corp Semiconductor device and method for the fabrication thereof
BE631066A (de) * 1962-04-16
US3260115A (en) * 1962-05-18 1966-07-12 Bell Telephone Labor Inc Temperature sensitive element
US3212160A (en) * 1962-05-18 1965-10-19 Transitron Electronic Corp Method of manufacturing semiconductive devices
US3266137A (en) * 1962-06-07 1966-08-16 Hughes Aircraft Co Metal ball connection to crystals
US3183576A (en) * 1962-06-26 1965-05-18 Ibm Method of making transistor structures
BE634311A (de) * 1962-06-29
US3255005A (en) * 1962-06-29 1966-06-07 Tung Sol Electric Inc Masking process for semiconductor elements
US3206827A (en) * 1962-07-06 1965-09-21 Gen Instrument Corp Method of producing a semiconductor device
US3296040A (en) * 1962-08-17 1967-01-03 Fairchild Camera Instr Co Epitaxially growing layers of semiconductor through openings in oxide mask
NL302804A (de) * 1962-08-23 1900-01-01
US3204321A (en) * 1962-09-24 1965-09-07 Philco Corp Method of fabricating passivated mesa transistor without contamination of junctions
US3271640A (en) * 1962-10-11 1966-09-06 Fairchild Camera Instr Co Semiconductor tetrode
US3245794A (en) * 1962-10-29 1966-04-12 Ihilco Corp Sequential registration scheme
US3271201A (en) * 1962-10-30 1966-09-06 Itt Planar semiconductor devices
BE639365A (de) * 1962-10-30
US3373324A (en) * 1962-12-05 1968-03-12 Motorola Inc Semiconductor device with automatic gain control
US3362858A (en) * 1963-01-04 1968-01-09 Westinghouse Electric Corp Fabrication of semiconductor controlled rectifiers
US3275910A (en) * 1963-01-18 1966-09-27 Motorola Inc Planar transistor with a relative higher-resistivity base region
NL303035A (de) * 1963-02-06 1900-01-01
US3205798A (en) * 1963-03-29 1965-09-14 Polaroid Corp Shutter timing apparatus and method
US3328214A (en) * 1963-04-22 1967-06-27 Siliconix Inc Process for manufacturing horizontal transistor structure
US3246214A (en) * 1963-04-22 1966-04-12 Siliconix Inc Horizontally aligned junction transistor structure
GB1054331A (de) * 1963-05-16
US3291658A (en) * 1963-06-28 1966-12-13 Ibm Process of making tunnel diodes that results in a peak current that is maintained over a long period of time
US3279963A (en) * 1963-07-23 1966-10-18 Ibm Fabrication of semiconductor devices
US3354364A (en) * 1963-08-22 1967-11-21 Nippon Electric Co Discontinuous resistance semiconductor device
DE1229650B (de) * 1963-09-30 1966-12-01 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelementes mit pn-UEbergang nach der Planar-Diffusionstechnik
US3206339A (en) * 1963-09-30 1965-09-14 Philco Corp Method of growing geometricallydefined epitaxial layer without formation of undesirable crystallites
DE1228343B (de) * 1963-10-22 1966-11-10 Siemens Ag Steuerbare Halbleiterdiode mit stellenweise negativer Strom-Spannungs-Kennlinie
US3312881A (en) * 1963-11-08 1967-04-04 Ibm Transistor with limited area basecollector junction
DE1250790B (de) * 1963-12-13 1967-09-28 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Verfahren zur Herstellung diffundierter Zonen von Verunreinigungen in einem Halbleiterkörper
NL134170C (de) * 1963-12-17 1900-01-01
US3504239A (en) * 1964-01-31 1970-03-31 Rca Corp Transistor with distributed resistor between emitter lead and emitter region
GB993388A (en) * 1964-02-05 1965-05-26 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3298879A (en) * 1964-03-23 1967-01-17 Rca Corp Method of fabricating a semiconductor by masking
GB1102164A (en) * 1964-04-15 1968-02-07 Texas Instruments Inc Selective impurity diffusion
US3290570A (en) * 1964-04-28 1966-12-06 Texas Instruments Inc Multilevel expanded metallic contacts for semiconductor devices
US3409483A (en) * 1964-05-01 1968-11-05 Texas Instruments Inc Selective deposition of semiconductor materials
US3363151A (en) * 1964-07-09 1968-01-09 Transitron Electronic Corp Means for forming planar junctions and devices
US3364399A (en) * 1964-07-15 1968-01-16 Irc Inc Array of transistors having a layer of soft metal film for dividing
US3492546A (en) * 1964-07-27 1970-01-27 Raytheon Co Contact for semiconductor device
DE1261480B (de) * 1964-09-17 1968-02-22 Telefunken Patent Verfahren zur Erzeugung einer elektrisch isolierenden Schicht auf einem Halbleiterkoerper
US3310442A (en) * 1964-10-16 1967-03-21 Siemens Ag Method of producing semiconductors by diffusion
US3341380A (en) * 1964-12-28 1967-09-12 Gen Electric Method of producing semiconductor devices
US3409482A (en) * 1964-12-30 1968-11-05 Sprague Electric Co Method of making a transistor with a very thin diffused base and an epitaxially grown emitter
USB311264I5 (de) * 1964-12-31 1900-01-01
GB1124762A (en) * 1965-01-08 1968-08-21 Lucas Industries Ltd Semi-conductor devices
US3391023A (en) * 1965-03-29 1968-07-02 Fairchild Camera Instr Co Dielecteric isolation process
US3313661A (en) * 1965-05-14 1967-04-11 Dickson Electronics Corp Treating of surfaces of semiconductor elements
DE1264619C2 (de) * 1965-06-18 1968-10-10 Siemens Ag Verfahren zum Herstellen einer Halbleiteranordnung, insbesondere aus Silizium, einer Silizium-Germanium-Legierung oder aus Siliziumkarbid
US3667115A (en) * 1965-06-30 1972-06-06 Ibm Fabrication of semiconductor devices with cup-shaped regions
US3922706A (en) * 1965-07-31 1975-11-25 Telefunken Patent Transistor having emitter with high circumference-surface area ratio
GB1161782A (en) * 1965-08-26 1969-08-20 Associated Semiconductor Mft Improvements in Semiconductor Devices.
US3461550A (en) * 1965-09-22 1969-08-19 Monti E Aklufi Method of fabricating semiconductor devices
US3360851A (en) * 1965-10-01 1968-01-02 Bell Telephone Labor Inc Small area semiconductor device
US3457631A (en) * 1965-11-09 1969-07-29 Gen Electric Method of making a high frequency transistor structure
DE1283400B (de) * 1965-11-23 1968-11-21 Siemens Ag Verfahren zum Herstellen einer Vielzahl von Siliciumplanartransistoren
DE1293308B (de) * 1966-01-21 1969-04-24 Siemens Ag Transistoranordnung zur Strombegrenzung
US3490962A (en) * 1966-04-25 1970-01-20 Ibm Diffusion process
US3504430A (en) * 1966-06-27 1970-04-07 Hitachi Ltd Method of making semiconductor devices having insulating films
DE1300164B (de) * 1967-01-26 1969-07-31 Itt Ind Gmbh Deutsche Verfahren zum Herstellen von Zenerdioden
US3503124A (en) * 1967-02-08 1970-03-31 Frank M Wanlass Method of making a semiconductor device
US3577042A (en) * 1967-06-19 1971-05-04 Int Rectifier Corp Gate connection for controlled rectifiers
DE1764759C3 (de) * 1968-07-31 1983-11-10 Telefunken Patentverwertungsgesellschaft Mbh, 6000 Frankfurt Verfahren zum Kontaktieren einer Halbleiterzone einer Diode
US3639186A (en) * 1969-02-24 1972-02-01 Ibm Process for the production of finely etched patterns
BE758160A (fr) * 1969-10-31 1971-04-01 Fairchild Camera Instr Co Structure metallique a couches multiples et procede de fabrication d'une telle structure
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US3808475A (en) * 1972-07-10 1974-04-30 Amdahl Corp Lsi chip construction and method
US3935587A (en) * 1974-08-14 1976-01-27 Westinghouse Electric Corporation High power, high frequency bipolar transistor with alloyed gold electrodes
JPS5193874A (en) * 1975-02-15 1976-08-17 Handotaisochino seizohoho
JPS5834945B2 (ja) * 1980-06-02 1983-07-29 株式会社東芝 ヒユ−ズ形ｐｒｏｍ半導体装置
US4633092A (en) * 1984-11-13 1986-12-30 Eastman Kodak Company Light sensing device
DE19600780B4 (de) * 1996-01-11 2006-04-13 Micronas Gmbh Verfahren zum Kontaktieren von Bereichen mit verschiedener Dotierung in einem Halbleiterbauelement und Halbleiterbauelement

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2345122A (en) * 1939-10-17 1944-03-28 Herrmann Heinrich Dry rectifier
NL89623C (de) * 1949-04-01
US2680220A (en) * 1950-06-09 1954-06-01 Int Standard Electric Corp Crystal diode and triode
BE503668A (de) * 1950-06-09
US2697269A (en) * 1950-07-24 1954-12-21 Bell Telephone Labor Inc Method of making semiconductor translating devices
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices
US2796562A (en) * 1952-06-02 1957-06-18 Rca Corp Semiconductive device and method of fabricating same
US2713132A (en) * 1952-10-14 1955-07-12 Int Standard Electric Corp Electric rectifying devices employing semiconductors
NL182212B (nl) * 1952-10-22 Nemag Nv Grijper.
NL87620C (de) * 1952-11-14
BE525280A (de) * 1952-12-31 1900-01-01
US2748325A (en) * 1953-04-16 1956-05-29 Rca Corp Semi-conductor devices and methods for treating same
US2798189A (en) * 1953-04-16 1957-07-02 Sylvania Electric Prod Stabilized semiconductor devices
US2976426A (en) * 1953-08-03 1961-03-21 Rca Corp Self-powered semiconductive device
NL89952C (de) * 1953-10-16 1900-01-01
US2886748A (en) * 1954-03-15 1959-05-12 Rca Corp Semiconductor devices
US2862160A (en) * 1955-10-18 1958-11-25 Hoffmann Electronics Corp Light sensitive device and method of making the same
US2866140A (en) * 1957-01-11 1958-12-23 Texas Instruments Inc Grown junction transistors
BE565907A (de) * 1957-03-22
NL230243A (de) * 1957-08-07
NL125999C (de) * 1958-07-17

Also Published As

Publication number Publication date
DE1197548C2 (de) 1975-02-13
US2858489A (en) 1958-10-28
CH384082A (de) 1964-11-15
NL6605653A (de) 1966-07-25
CH399604A (de) 1965-09-30
GB843409A (en) 1960-08-04
US3064167A (en) 1962-11-13
DE1197548B (de) 1975-02-13
CH399603A (de) 1965-09-30
NL251064A (de)
US3025589A (en) 1962-03-20
GB947520A (en) 1964-01-22

Similar Documents

Publication Publication Date Title
AT198143B (de)
AT198671B (de)
AT195787B (de)
AT195882B (de)
AT197696B (de)
AT198478B (de)
DE1050050B (de)
AT196599B (de)
AT196487B (de)
AT195705B (de)
AT195857B (de)
AT195858B (de)
AT196153B (de)
AT196165B (de)
AT196279B (de)
AT196336B (de)
AT196338B (de)
AT196484B (de)
AT196488B (de)
AT196671B (de)
AT196795B (de)
AT198439B (de)
AT198360B (de)
AT198283B (de)
AT198281B (de)