KR960010909A - 박막형성장치 및 박막형성방법 - Google Patents

박막형성장치 및 박막형성방법 Download PDF

Info

Publication number: KR960010909A
Authority: KR; South Korea
Prior art keywords: thin film; film forming; forming apparatus; forming method; thin
Prior art date: 1994-09-01

Application number

KR1019950027426A

Other languages

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1994-09-01

Filing date

1995-08-30

Publication date

1996-04-20

1995-08-30 Application filed filed Critical

1996-04-20 Publication of KR960010909A publication Critical patent/KR960010909A/ko

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

Chemical & Material Sciences (AREA)
Metallurgy (AREA)
Chemical Kinetics & Catalysis (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Organic Chemistry (AREA)
General Chemical & Material Sciences (AREA)
Mechanical Engineering (AREA)
Crystallography & Structural Chemistry (AREA)
Chemical Vapour Deposition (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Physical Vapour Deposition (AREA)
Electrodes Of Semiconductors (AREA)

KR1019950027426A 1994-09-01 1995-08-30 박막형성장치 및 박막형성방법 KR960010909A (ko)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP6208427A JPH0874028A (ja)	1994-09-01	1994-09-01	薄膜形成装置および薄膜形成方法

Publications (1)

Publication Number	Publication Date
KR960010909A true KR960010909A (ko)	1996-04-20

Family

ID=16556044

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019950027426A KR960010909A (ko)	1994-09-01	1995-08-30	박막형성장치 및 박막형성방법

Country Status (5)

Country	Link
US (1)	US5755888A (ko)
EP (1)	EP0699777A1 (ko)
JP (1)	JPH0874028A (ko)
KR (1)	KR960010909A (ko)
CN (1)	CN1132803A (ko)

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US6132564A (en) *	1997-11-17	2000-10-17	Tokyo Electron Limited	In-situ pre-metallization clean and metallization of semiconductor wafers
US6152070A (en) *	1996-11-18	2000-11-28	Applied Materials, Inc.	Tandem process chamber
US6077157A (en) *	1996-11-18	2000-06-20	Applied Materials, Inc.	Process chamber exhaust system
US6280790B1 (en) *	1997-06-30	2001-08-28	Applied Materials, Inc.	Reducing the deposition rate of volatile contaminants onto an optical component of a substrate processing system
US6228773B1 (en)	1998-04-14	2001-05-08	Matrix Integrated Systems, Inc.	Synchronous multiplexed near zero overhead architecture for vacuum processes
JP2001023978A (ja) *	1999-07-05	2001-01-26	Mitsubishi Electric Corp	半導体装置の製造装置および製造方法
JP5054874B2 (ja) *	1999-12-02	2012-10-24	ティーガルコーポレイション	リアクタ内でプラチナエッチングを行う方法
US6630053B2 (en) *	2000-08-22	2003-10-07	Asm Japan K.K.	Semiconductor processing module and apparatus
JP2005534174A (ja) *	2002-07-19	2005-11-10	アクセリステクノロジーズ，インコーポレイテッド	フォトレジスト・アッシング装置
KR100429296B1 (ko) *	2002-09-09	2004-04-29	한국전자통신연구원	반도체 소자 제조 장치 및 이를 이용한 반도체 소자 제조방법
JP4833512B2 (ja) *	2003-06-24	2011-12-07	東京エレクトロン株式会社	被処理体処理装置、被処理体処理方法及び被処理体搬送方法
US7467916B2 (en) *	2005-03-08	2008-12-23	Asm Japan K.K.	Semiconductor-manufacturing apparatus equipped with cooling stage and semiconductor-manufacturing method using same
US7845540B2 (en) *	2005-08-30	2010-12-07	Micron Technology, Inc.	Systems and methods for depositing conductive material into openings in microfeature workpieces
US20080006650A1 (en) *	2006-06-27	2008-01-10	Applied Materials, Inc.	Method and apparatus for multi-chamber exhaust control
JP2008234850A (ja) *	2007-03-16	2008-10-02	Matsushita Electric Ind Co Ltd	電気化学素子とその電極の製造方法、製造装置
CN101845620B (zh) *	2009-03-27	2012-07-18	亚洲太阳科技有限公司	脉冲加热多匣式化学气相沉积p-i-n镀膜装置
US20110100554A1 (en) *	2009-09-09	2011-05-05	Applied Materials, Inc.	Parallel system for epitaxial chemical vapor deposition
US10204790B2 (en)	2015-07-28	2019-02-12	Asm Ip Holding B.V.	Methods for thin film deposition
US11421321B2 (en)	2015-07-28	2022-08-23	Asm Ip Holding B.V.	Apparatuses for thin film deposition
JP7014055B2 (ja) *	2018-06-15	2022-02-01	東京エレクトロン株式会社	真空処理装置、真空処理システム、及び真空処理方法
KR20210157338A (ko)	2020-06-19	2021-12-28	에이에스엠 아이피 홀딩 비.브이.	다중 스테이지 기판 처리 시스템
TW202223991A (zh)	2020-10-21	2022-06-16	荷蘭商ＡｓｍＩｐ私人控股有限公司	用於可流動間隙填充之方法及裝置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS59123226A (ja) *	1982-12-28	1984-07-17	Fujitsu Ltd	半導体装置の製造装置
JPS61149476A (ja) *	1984-12-24	1986-07-08	Toshiba Corp	スパツタリング装置
EP0246453A3 (en) *	1986-04-18	1989-09-06	General Signal Corporation	Novel multiple-processing and contamination-free plasma etching system
US4725204A (en) *	1986-11-05	1988-02-16	Pennwalt Corporation	Vacuum manifold pumping system
US4951601A (en) *	1986-12-19	1990-08-28	Applied Materials, Inc.	Multi-chamber integrated process system
US5292393A (en) *	1986-12-19	1994-03-08	Applied Materials, Inc.	Multichamber integrated process system
JPS63274765A (ja) *	1987-04-28	1988-11-11	Nec Corp	薄膜形成装置
US5016562A (en) *	1988-04-27	1991-05-21	Glasstech Solar, Inc.	Modular continuous vapor deposition system
US4911810A (en) *	1988-06-21	1990-03-27	Brown University	Modular sputtering apparatus
US5076205A (en) *	1989-01-06	1991-12-31	General Signal Corporation	Modular vapor processor system
JP2948842B2 (ja) *	1989-11-24	1999-09-13	日本真空技術株式会社	インライン型ｃｖｄ装置
US5043299B1 (en) *	1989-12-01	1997-02-25	Applied Materials Inc	Process for selective deposition of tungsten on semiconductor wafer
EP0448223B1 (en) *	1990-02-19	1996-06-26	Canon Kabushiki Kaisha	Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminum hydride
DE4005956C1 (ko) *	1990-02-26	1991-06-06	Siegfried Dipl.-Ing. Dr. 5135 Selfkant De Straemke
JP2525284B2 (ja) *	1990-10-22	1996-08-14	ティーディーケイ株式会社	クリ―ン搬送方法及び装置
JPH04268725A (ja) *	1991-02-25	1992-09-24	Canon Inc	力学量検出センサおよびその製造方法
US5324360A (en) *	1991-05-21	1994-06-28	Canon Kabushiki Kaisha	Method for producing non-monocrystalline semiconductor device and apparatus therefor
JPH081923B2 (ja) *	1991-06-24	1996-01-10	ティーディーケイ株式会社	クリーン搬送方法及び装置
JPH05109655A (ja) *	1991-10-15	1993-04-30	Applied Materials Japan Kk	Ｃｖｄ−スパツタ装置
JP2598353B2 (ja) *	1991-12-04	1997-04-09	アネルバ株式会社	基板処理装置、基板搬送装置及び基板交換方法
JPH05218176A (ja) *	1992-02-07	1993-08-27	Tokyo Electron Tohoku Kk	熱処理方法及び被処理体の移載方法
US5303671A (en) *	1992-02-07	1994-04-19	Tokyo Electron Limited	System for continuously washing and film-forming a semiconductor wafer
JP3186262B2 (ja) *	1992-10-14	2001-07-11	ソニー株式会社	半導体装置の製造方法
JP3330166B2 (ja) *	1992-12-04	2002-09-30	東京エレクトロン株式会社	処理装置
DE19505258C2 (de) *	1995-02-16	1998-08-06	Samsung Electronics Co Ltd	Beschichtungsvorrichtung

1994
- 1994-09-01 JP JP6208427A patent/JPH0874028A/ja active Pending
1995
- 1995-08-23 US US08/518,267 patent/US5755888A/en not_active Expired - Fee Related
- 1995-08-26 EP EP95113430A patent/EP0699777A1/en not_active Withdrawn
- 1995-08-30 KR KR1019950027426A patent/KR960010909A/ko not_active Application Discontinuation
- 1995-09-01 CN CN95117104A patent/CN1132803A/zh active Pending

Also Published As

Publication number	Publication date
CN1132803A (zh)	1996-10-09
JPH0874028A (ja)	1996-03-19
US5755888A (en)	1998-05-26
EP0699777A1 (en)	1996-03-06

Legal Events

Date	Code	Title
1995-08-30	A201	Request for examination
1998-04-20	E902	Notification of reason for refusal
1998-07-11	E601	Decision to refuse application

Publication	Publication Date	Title
FI100409B (fi)	1997-11-28	Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
FI945612A (fi)	1996-05-29	Menetelmä ja laite ohutkalvojen valmistamiseksi
KR960010909A (ko)	1996-04-20	박막형성장치 및 박막형성방법
DE69535393D1 (de)	2007-04-05	Bilderzeugungsverfahren und -gerät
FI973378A (fi)	1997-10-16	Laite ja menetelmä
DE69633218D1 (de)	2004-09-30	Bildreproduktionsverfahren und -gerät
DE69527353D1 (de)	2002-08-14	Beschichtungsverfahren und -vorrichtung
GB2292113B (en)	1997-11-05	Film peeling method and apparatus
DE69404128D1 (de)	1997-08-14	Abbildungsverfahren und -apparat
DE69623096D1 (de)	2002-09-26	Belichtungsapparat und -verfahren
EP0997552A4 (en)	2001-05-02	METHOD FOR MANUFACTURING THIN FUNCTIONAL FILM AND APPARATUS THEREOF
DE69633319D1 (de)	2004-10-14	Bildreproduktionsverfahren und -gerät
FI972401A (fi)	1997-07-15	Kuvansiirtomenetelmä ja -laite
DE69629790D1 (de)	2003-10-09	Bildwiedergabeverfahren und -vorrichtung
KR960013620A (ko)	1996-05-22	성형 방법 및 성형 장치
KR970005038A (ko)	1997-02-19	근경조식방법과 그 장치
KR960009003A (ko)	1996-03-22	박막형성방법 및 장치
DE69736412D1 (de)	2006-09-14	Bilderzeugungsverfahren und -vorrichtung
DE69618636D1 (de)	2002-02-28	Druckverfahren und -vorrichtung
DE69518183D1 (de)	2000-09-07	Beschichtungsvorrichtung und -verfahren
DE69534048D1 (de)	2005-04-07	Bilderzeugungsverfahren und -vorrichtungen
KR960701745A (ko)	1996-03-28	박막형성장치 및 박막형성방법(thin film forming apparatus and thin film forming method)
DE69534638T2 (de)	2006-06-14	Bildverarbeitungsvorrichtung und -verfahren
DE69736880D1 (de)	2006-12-14	Bilderzeugungsgerät und -verfahren
DE69536034D1 (de)	2010-02-04	Belichtungsapparat und Belichtungsverfahren