KR950015689A - Transistor Impulse Fracture Characteristics Measuring Device - Google Patents

Transistor Impulse Fracture Characteristics Measuring Device Download PDF

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Publication number
KR950015689A
KR950015689A KR1019930024223A KR930024223A KR950015689A KR 950015689 A KR950015689 A KR 950015689A KR 1019930024223 A KR1019930024223 A KR 1019930024223A KR 930024223 A KR930024223 A KR 930024223A KR 950015689 A KR950015689 A KR 950015689A
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KR
South Korea
Prior art keywords
transistor
power supply
control
destroyed
supply device
Prior art date
Application number
KR1019930024223A
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Korean (ko)
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KR970007976B1 (en
Inventor
김진호
Original Assignee
배순훈
대우전자 주식회사
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Priority to KR1019930024223A priority Critical patent/KR970007976B1/en
Publication of KR950015689A publication Critical patent/KR950015689A/en
Application granted granted Critical
Publication of KR970007976B1 publication Critical patent/KR970007976B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

본 발명은 트랜지스터의 임펄스 파괴특성 측정장치에 관한 것으로서, 더욱 상세하게는 트랜지스터의 콜렉터측에 각기 다른 레벨의 전류값을 인가시킨 후 트랜지스터의 파괴 여부를 검출할 수 있도록 한 트랜지스터의 임펄스 파괴특성 측정장치에 관한 것이다.The present invention relates to a device for measuring impulse breakdown characteristics of a transistor, and more particularly, to a device for measuring impulse breakdown characteristics of a transistor capable of detecting whether a transistor is destroyed after applying different current values to the collector side of the transistor. It is about.

즉 본 발명은 제1도에서와 같이 정전류 전원장치(30)의 전류값을 선택하여 피측정용 트랜지스터(Q)의 콜렉터측에 인가시키며, 상기 피측정용 트랜지스터(Q)의 파괴여부를 검출하는 제어 및 처리장치(10)와, 상기 정전류 전원장치(30)의 선택 전류값과 피측정 트랜지스터(Q)의 파괴여부를 표시하는 표시장치(20)로 구성한 것이다.That is, according to the present invention, as shown in FIG. 1, the current value of the constant current power supply device 30 is selected and applied to the collector side of the transistor under measurement Q, and detecting whether the transistor Q under measurement is destroyed. The control and processing device 10 and the display device 20 which displays the selected current value of the constant current power supply device 30 and whether or not the transistor under measurement Q is destroyed.

Description

트랜지스터 임펄스 파괴특성 측정장치Transistor Impulse Fracture Characteristics Measuring Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 회로도.1 is a circuit diagram according to the present invention.

제2도는 본 발명에 따른 흐름도이다.2 is a flow chart according to the present invention.

Claims (5)

정전류 전원장치(30)의 전류값을 선택하여 피측정용 트랜지스터(Q)의 콜렉터측에 인가시키며, 상기 피측정용 트랜지스터(Q)의 파괴여부를 검출하는 제어 및 처리장치(10)와, 상기 정전류 전원장치(30)의 선택 전류값과 피측정 트랜지스터(Q)의 파괴여부를 표시하는 표시장치(20)로 구성함을 특징으로 하는 트랜지스터 임펄스 파괴특성 측정장치.A control and processing device 10 which selects a current value of the constant current power supply device 30 and applies it to the collector side of the transistor under measurement Q, and detects whether the transistor under measurement Q is destroyed; And a display device (20) which displays the selected current value of the constant current power supply device (30) and whether or not the transistor to be measured (Q) is destroyed. 제1항에 있어서, 제어 및 처리장치(10)의 제어로 정전류 전원장치(30)의 전류 출력을 단속하는 임펄스 전류 단속부(40)가 구성되어진 특징을 갖는 트랜지스터 임펄스 파괴특성 측정장치.2. An apparatus for measuring transistor impulse destruction characteristics according to claim 1, characterized in that an impulse current interrupter (40) is configured to control the current output of the constant current power supply device (30) under control of the control and processing device (10). 제2항에 있어서, 정전류 전원장치(30)의 전류 출력시간(T)을 임의로 선택하도록 구성함을 특징으로 하는 트랜지스터 임펄스 파괴특성 측정장치.3. The apparatus for measuring transistor impulse breakdown characteristics according to claim 2, wherein the current output time T of the constant current power supply device is selected arbitrarily. 제2항에서 있어서, 임펄스 전류 단속부(40)는 상호 연동하는 트랜지스터(Q2)(Q1)로 구성되어짐을 특징으로 하는 트랜지스터 임펄스 파괴특성 측정장치.3. The apparatus of claim 2, wherein the impulse current interrupter (40) is comprised of transistors (Q 2 ) (Q 1 ) interoperating with each other. 제1항에 있어서, 제어 및 처리장치(10)의 제어데이타를 피측정 트랜지스터(Q)의 베이스측에 인가시키는 버퍼부(60)와, 제어 및 처리장치(10)의 제어로 피측정 트랜지스터(Q)의 콜렉터측에 풀업전원을 인가시키는 풀업전원부(50)를 구성시켜 피측정 트랜지스터(Q)의 파괴여부를 검출함을 특징으로 하는 트랜지스터 임펄스 파괴특성 측정장치.The buffer unit 60 according to claim 1, further comprising a buffer unit 60 for applying the control data of the control and processing apparatus 10 to the base side of the transistor Q to be measured, and the transistor to be measured under control of the control and processing apparatus 10. And a pull-up power supply unit (50) for applying a pull-up power supply to the collector side of Q) to detect whether or not the transistor to be measured (Q) is destroyed. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930024223A 1993-11-15 1993-11-15 Impulse measurement apparatus of transistor KR970007976B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930024223A KR970007976B1 (en) 1993-11-15 1993-11-15 Impulse measurement apparatus of transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930024223A KR970007976B1 (en) 1993-11-15 1993-11-15 Impulse measurement apparatus of transistor

Publications (2)

Publication Number Publication Date
KR950015689A true KR950015689A (en) 1995-06-17
KR970007976B1 KR970007976B1 (en) 1997-05-19

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ID=19368069

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930024223A KR970007976B1 (en) 1993-11-15 1993-11-15 Impulse measurement apparatus of transistor

Country Status (1)

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KR (1) KR970007976B1 (en)

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Publication number Publication date
KR970007976B1 (en) 1997-05-19

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