KR900000989A - Semiconductor contact manufacturing method - Google Patents

Semiconductor contact manufacturing method Download PDF

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Publication number
KR900000989A
KR900000989A KR1019880008106A KR880008106A KR900000989A KR 900000989 A KR900000989 A KR 900000989A KR 1019880008106 A KR1019880008106 A KR 1019880008106A KR 880008106 A KR880008106 A KR 880008106A KR 900000989 A KR900000989 A KR 900000989A
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KR
South Korea
Prior art keywords
base
emitter
oxide layer
region
exposing
Prior art date
Application number
KR1019880008106A
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Korean (ko)
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KR960008568B1 (en
Inventor
이경일
Original Assignee
최근선
주식회사 금성사
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Priority to KR1019880008106A priority Critical patent/KR960008568B1/en
Publication of KR900000989A publication Critical patent/KR900000989A/en
Application granted granted Critical
Publication of KR960008568B1 publication Critical patent/KR960008568B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음No content

Description

반도체 콘텍트 제조방법Semiconductor contact manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명 방법의 공정도1 is a process diagram of the method of the present invention

Claims (1)

베이스 및 에미터 영역(1,2)위의 산화층(3)에 감광층(PR)을 도포하여 베이스 콘텍트마스크로서 베이스 영역(1)위에만 노광 및 현상하여 베이스 영역(1)위의 산화층(3)을 노툴시킨다음 베이스 영역 산화층(3)을 에미터 영역 산화층(3´)의 두께만큼 에칭한후 다시 에미터영역(2)위의 감광층(PR)만 에미터 콘텍트 마스크로서 노광 및 현상하여 에미터 영역(2)위의 산화층(3´)을 노출시켜 산화층(3,3´)을 동시에 에칭하여 베이스 및 에미터 영역을 노출시킨 다음 감광층(PR)을 제거하는 공정으로된 반도체 콘텍트 제조방법.The photosensitive layer PR is applied to the oxide layer 3 on the base and emitter regions 1 and 2 to expose and develop only on the base region 1 as a base contact mask, thereby exposing the oxide layer 3 on the base region 1. After etching, the base region oxide layer 3 is etched to the thickness of the emitter region oxide layer 3 ', and only the photosensitive layer PR on the emitter region 2 is exposed and developed as an emitter contact mask. Manufacture of semiconductor contacts by exposing the oxide layer 3 'on the emitter region 2 to simultaneously etch the oxide layers 3, 3', exposing the base and emitter regions, and then removing the photosensitive layer PR. Way. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880008106A 1988-06-30 1988-06-30 Semiconductor contact manufacturing method KR960008568B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880008106A KR960008568B1 (en) 1988-06-30 1988-06-30 Semiconductor contact manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880008106A KR960008568B1 (en) 1988-06-30 1988-06-30 Semiconductor contact manufacturing method

Publications (2)

Publication Number Publication Date
KR900000989A true KR900000989A (en) 1990-01-31
KR960008568B1 KR960008568B1 (en) 1996-06-28

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ID=19275773

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880008106A KR960008568B1 (en) 1988-06-30 1988-06-30 Semiconductor contact manufacturing method

Country Status (1)

Country Link
KR (1) KR960008568B1 (en)

Also Published As

Publication number Publication date
KR960008568B1 (en) 1996-06-28

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