KR20200112782A - Light-emitting module - Google Patents

Abstract

Provided is a light-emitting module including a light-emitting device bonded to a mounting substrate with high strength while suppressing a decrease in strength. The light-emitting module comprises: a light-emitting device; and a mounting substrate on which the light-emitting device is mounted. The light-emitting device includes: the substrate having a base member having a front surface, a rear surface, a lower surface, and an upper surface, a first wiring disposed on the front surface, a second wiring disposed on the rear surface, and a via hole electrically connected to the first wiring and the second wiring: at least one light-emitting element electrically connected with the first wiring and disposed on the first wiring; and a light-reflective covering member covering a side surface of the light-emitting element and the front surface of the substrate. The base member has a plurality of depressed portions opening the rear surface and the lower surface. The mounting substrate includes a plurality of land patterns disposed at a position corresponding to each of openings of the plurality of depressed portions in a lower surface of the light-emitting device.

Description

Light-Emitting Module{LIGHT-EMITTING MODULE}

The present invention relates to a light emitting device.

A light-emitting device is known in which a mounting surface of a support (substrate) has a concave portion, and a support (substrate) and a mounting substrate are fixed by filling the concave with brazing (see, for example, Patent Document 1).

Japanese Patent Publication No. 2013-041865

An object of the present invention is to provide a light emitting device capable of improving the bonding strength with a mounting substrate while suppressing a decrease in the strength of the substrate.

A light emitting device according to an aspect of the present invention includes a front extending in a first direction that is a long side direction and a second direction that is a short side direction, a rear surface positioned on the opposite side of the front side, and adjacent to the front side, and A substrate having an orthogonal bottom surface and an upper surface located on the opposite side of the bottom surface, a first wiring arranged on the front surface, a second wiring arranged on the rear surface, and the first wiring and the second wiring are electrically A substrate having a via hole connected to each other; at least one light emitting device electrically connected to the first wiring and placed on the first wiring; and light covering the side surfaces of the light emitting device and the front surface of the substrate A light-emitting device having a reflective covering member, wherein the substrate is spaced apart from the via hole when viewed from a front surface, and has a plurality of pits that are opened to the rear surface and the bottom surface, and the substrate comprises: a plurality of the pits. And a third wiring electrically connected to the second wiring, covering the inner wall of the pit, and each of the depths of the plurality of pits in the front direction from the rear surface is deeper on the bottom side than on the top side. .

According to the light emitting device of the present invention, it is possible to provide a light emitting device capable of improving the bonding strength with a mounting substrate while suppressing a decrease in the strength of the substrate.

1A is a schematic perspective view 1 of a light emitting device according to the first embodiment.
1B is a schematic perspective view 2 of a light emitting device according to the first embodiment.
[Fig. 1C] Fig. 1C is a schematic front view of a light emitting device according to the first embodiment.
[Fig. 2A] Fig. 2A is a schematic cross-sectional view taken along line 2A-2A in Fig. 1C.
[Fig. 2B] Fig. 2B is a schematic cross-sectional view taken along line 2B-2B in Fig. 1C.
[Fig. 3A] Fig. 3A is a schematic bottom view of a light emitting device according to Embodiment 1. [Fig.
3B is a schematic bottom view of the deformability of the light emitting device according to the first embodiment.
3C is a schematic front view of a substrate according to the first embodiment.
4A is a schematic rear view of a light emitting device according to the first embodiment.
4B is a schematic rear view showing a modified example of the light emitting device according to the first embodiment.
4C is a schematic rear view showing a modified example of the light emitting device according to the first embodiment.
[Fig. 4D] Fig. 4D is a schematic bottom view of the deformability of the light emitting device according to the first embodiment.
4E is a schematic bottom view of the deformability of the light emitting device according to the first embodiment.
4F is a schematic bottom view of the deformability of the light emitting device according to the first embodiment.
5A is a schematic right side view of the light emitting device according to the first embodiment.
5B is a schematic left side view of the light emitting device according to the first embodiment.
6 is a schematic top view of a light emitting device according to the first embodiment.
7 is a schematic front view of a light emitting device according to the second embodiment.
Fig. 8A is a schematic cross-sectional view taken along line 8A-8A in Fig. 7.
Fig. 8B is a schematic cross-sectional view taken along line 8B-8B in Fig. 7.
[Fig. 9A] Fig. 9A is a schematic bottom view of a light emitting device according to Embodiment 2. [Fig.
9B is a schematic rear view of a light emitting device according to the second embodiment.
10 is a schematic front view of a light emitting device according to a third embodiment.
11 is a schematic cross-sectional view taken along line 11A-11A in FIG. 10.
12 is a schematic bottom view of a light emitting device according to the third embodiment.
13 is a schematic rear view of a light emitting device according to a third embodiment.
14 is a schematic right side view of the light emitting device according to the third embodiment.
15 is a schematic front view showing a modified example of the light emitting device according to the third embodiment.
16 is a schematic cross-sectional view taken along the line 15A-15A in FIG. 15.
17 is a schematic front view of a light emitting device according to a fourth embodiment.
18 is a schematic cross-sectional view taken along the line 18A-18A in FIG. 17.
19 is a schematic bottom view of a light emitting device according to the fourth embodiment.
20 is a schematic rear view of a light emitting device according to a fourth embodiment.
[Fig. 21] Fig. 21 is a schematic right side view of the light emitting device according to the fourth embodiment.
22 is a schematic rear view of a light emitting device according to the fifth embodiment.
23 is a schematic rear view of the light emitting device according to the sixth embodiment.
[Fig. 24] Fig. 24 is a schematic rear view of a light emitting device according to Embodiment 7. [Fig.
[Fig. 25A] Fig. 25A is a schematic bottom view of a land pattern in which the light emitting device according to the first embodiment is described with a dotted line.
[Fig. 25B] Fig. 25B is a schematic bottom view showing a modified example of a land pattern in which the light emitting device according to the first embodiment is described with a dotted line.
[Fig. 25C] Fig. 25C is a schematic bottom view showing a modified example of a land pattern in which the light emitting device according to the first embodiment is described with a dotted line.
[Fig. 26A] Fig. 26A is a schematic bottom view of a land pattern in which the light emitting device according to the fourth embodiment is described with a dotted line.
26B is a schematic bottom view showing a modified example of a land pattern in which the light emitting device according to the fourth embodiment is described by a dotted line.
[Fig. 27] Fig. 27 is a schematic front view of a light emitting device according to Embodiment 8. [Fig.
[Fig. 28A] Fig. 28A is a schematic cross-sectional view taken along line 28A-28A in Fig. 27.
28B is a schematic cross-sectional view taken along line 28B-28B in FIG. 27.
[Fig. 29] Fig. 29 is a schematic bottom view of a light emitting device according to Embodiment 8. [Fig.
[Fig. 30] Fig. 30 is a schematic rear view of a light emitting device according to Embodiment 8. [Fig.
31 is a schematic cross-sectional view of a modified example of the light emitting device according to the eighth embodiment.

Hereinafter, embodiments of the invention will be described appropriately with reference to the drawings. However, the light-emitting device described below is for embodying the technical idea of the present invention, and the present invention is not limited to the following unless otherwise specified. In addition, the size and positional relationship of members shown in the drawings are sometimes exaggerated in order to clarify explanation.

<Embodiment 1>

A light emitting device 1000 according to an embodiment of the present invention will be described with reference to FIGS. 1A to 6. The light emitting device 1000 includes a substrate 10, at least one light emitting device 20, and a covering member 40. The substrate 10 includes a substrate 11, a first wiring 12, a second wiring 13, a third wiring 14, and a via hole 15. The substrate 11 includes a front surface 111 extending in a first direction that is a long side and a second direction that is a short side direction, a rear surface 112 located on the opposite side of the front surface, and a front surface ( It has a bottom surface 113 orthogonal to 111 and an upper surface 114 positioned on the opposite side of the bottom surface 113. The base material 11 further has a plurality of pits 16. The first wiring 12 is disposed on the front surface 111 of the substrate 11. The second wiring 13 is disposed on the rear surface 112 of the substrate 11. The via hole 15 electrically connects the first wiring 12 and the second wiring 13. The light emitting device 20 is electrically connected to the first wiring 12 and is mounted on the first wiring 12. The covering member 40 has light reflectivity and covers the side surface 202 of the light emitting element 20 and the front surface 111 of the substrate. The plurality of pits 16 are spaced apart from the via hole 15 when viewed from the front, and open to the rear surface 112 and the bottom surface 113. The third wiring 14 covers the inner walls of the plurality of pits 16 and is electrically connected to the second wiring 13. In each of the depths of the plurality of pits 16 in the direction from the rear surface 112 to the front surface 111, the depth W1 of the pits on the bottom side is deeper than the depth W2 of the pits on the upper surface side. In addition, in this specification, orthogonal means 90±3 degrees.

The light emitting device 1000 can be fixed to the mounting substrate by a bonding member such as solder formed in the plurality of pits 16. Since the bonding member may be located in the plurality of pits, the bonding strength between the light emitting device 1000 and the mounting substrate may be improved compared to the case of a single pits. As shown in Fig. 2A, each of the depths of the plurality of pits in the direction from the rear to the front (Z direction) is deeper on the bottom side than on the top side, so that in the front direction (Z direction) from the rear, the top side of the pit The thickness W5 of the substrate positioned at can be made thicker than the thickness W6 of the substrate positioned at the bottom side of the pit. Thereby, a decrease in the strength of the substrate can be suppressed. Further, since the depth W1 of the pit on the bottom side increases, the volume of the bonding member formed in the pit increases, so that the bonding strength between the light emitting device 1000 and the mounting substrate can be improved. The light emitting device 1000 is a top light emitting type (top view type) in which the rear surface 112 of the substrate 11 and the mounting substrate are mounted to face each other, and the bottom surface 113 of the substrate 11 and the mounting substrate are opposed to each other. Even in the side-emitting type to be mounted (side-view type), the bonding strength with the mounting substrate can be improved by increasing the volume of the bonding member. In addition, in this specification, the direction from the back to the front is also referred to as the Z direction.

The bonding strength between the light emitting device 1000 and the mounting substrate can be improved, particularly in the case of a side-emitting type. When the depth of the pit in the Z direction is deeper on the bottom side than on the top side, the area of the opening of the pit in the bottom can be increased. By increasing the area of the opening of the pit in the bottom surface facing the mounting substrate, the area of the bonding member located on the bottom surface can also be increased. Accordingly, since the area of the bonding member positioned on the surface opposite to the mounting substrate can be increased, the bonding strength between the light emitting device 1000 and the mounting substrate can be improved.

As shown in FIG. 2A, the depth W1 of the pit 16 in the Z direction is shallower than the thickness W3 of the base material in the Z direction. That is, the pit 16 does not penetrate the substrate. Forming a hole through the substrate lowers the strength of the substrate. For this reason, it is possible to suppress a decrease in strength of the substrate by providing a pits that do not penetrate the substrate. It is preferable that the maximum of each depth of the plurality of pits in the Z direction is 0.4 to 0.8 times the thickness of the substrate. Since the depth of the pit is greater than 0.4 times the thickness of the substrate, the volume of the bonding member formed in the pit increases, so that the bonding strength between the light emitting device and the mounting substrate can be improved. Since the depth of the pit is shallower than 0.8 times the thickness of the substrate, a decrease in the strength of the substrate can be suppressed.

When viewed from a cross section, it is preferable that the pit 16 includes a parallel portion 161 extending from the rear surface 112 to the bottom surface 113 in a parallel direction (Z direction). By providing the parallel portion 161, the volume of the pit can be increased even if the area of the opening of the pit on the rear surface is the same. By increasing the volume of the pit, it is possible to increase the amount of bonding members such as solder that can be formed in the pit, so that the bonding strength between the light emitting device 1000 and the mounting substrate can be improved. In addition, in the present specification, parallel means allowing an inclination of about ±3°. Further, the pit 16 is provided with an inclined portion 162 inclined in a direction in which the thickness of the substrate 11 becomes thicker from the bottom surface 113 when viewed in cross section. The inclined portion 162 may be straight or curved. Since the inclined portion 162 is straight, it is easy to form by a drill having a sharp tip. Incidentally, the straight line in the inclined portion 162 means that fluctuations such as bending or shift of about 3 μm are allowed.

As shown in FIG. 3A, in the bottom surface, it is preferable that the depth W1 at the center of each of the plurality of pits 16 is the maximum of the depth of the pits in the Z direction. By doing in this way, since the thickness W8 of the base material in the Z direction can be made thick at the end of the hole in the X direction on the bottom surface, the strength of the base material can be improved. In addition, in the present specification, the term “center” means that a variation of about 5 μm is allowed. In addition, as shown in FIG. 3B which is a modified example of Embodiment 1, in the bottom surface, the depth W7 of the pit 16 in the Z direction may be substantially constant. In other words, the deepest portion of the pit 16 may be a flat surface. The pit 16 can be formed by a known method such as a drill or a laser. In the bottom surface, the pit with the maximum depth in the center can be easily formed by a drill with a sharp tip. In addition, by using a drill, it is possible to form a pit having a substantially circular columnar shape that has a substantially conical shape at the deepest portion and continues from the circular shape of the substantially conical bottom surface. By cutting a part of the pit by dicing or the like, it is possible to form a pit having a substantially semi-circular column shape and a substantially semi-circular column shape continuous from a substantially semi-circular column shape.

As shown in FIG. 4A, on the rear surface, it is preferable that each shape of the plurality of pits 16 is the same. Since each of the plurality of pits has the same shape, formation of the pits becomes easier than when the pits have different shapes. For example, in the case of forming a pit by a drilling method, a pit can be formed by a single drill if the shape of each of the plurality of pits is the same. In addition, the same in the present specification means that a difference of about 5 μm is allowed.

In addition, the areas of the openings of the plurality of pits when viewed from the rear surface may be the same or different. For example, as shown in Fig. 4B, the area of the opening of the pit 16C located in the center of the base material when viewed from the rear is the pit 16L located on the X+ side and the pit 16R located on the X- side. ) May be larger than the area of each opening. In addition, when viewed from the rear surface shown in Figs. 4B, 4C, or the like, the right side on the X-axis from the center of the light emitting device is set as X+ side, and the left side is set as X- side. By increasing the area of the opening portion of the pit 16C located in the center of the substrate, the bonding strength between the light emitting device and the mounting substrate can be improved. Moreover, since the area of the openings of the pit 16L located on the X+ side and the pit 16R located on the X- side is small, the area of the second wiring 13 can be increased easily. Since the area of the second wiring 13 is large, the inspection becomes easy when the probe needle is brought into contact with the second wiring in a characteristic inspection of a light emitting device or the like. In addition, as shown in Fig. 4C, when viewed from the rear, the area of each opening of the pit 16L located on the X+ side and the pit 16R located on the X- side is located at the center of the base material. It may be larger than the area of the opening of. By increasing the area of each opening of the pit 16L located on the X+ side and the pit 16R located on the X- side, the bonding strength between the light emitting device and the mounting substrate can be improved. In addition, it is preferable that the areas of the openings of the pit 16L located on the X+ side and the pit 16R located on the X- side are substantially the same as viewed from the rear. By doing in this way, it becomes easy to suppress the deflection of the bonding member formed in the pit 16L located on the X+ side and the bonding member formed in the pit 16R located on the X- side. Thereby, it becomes easy to suppress that the light emitting device is mounted inclined to the mounting substrate.

3A and 3B, the depths W1 and W7 of the plurality of pits in the Z direction may be the same, and as shown in FIG. 4D, the depths of the plurality of pits in the Z direction may not be the same. For example, as shown in Fig. 4D, the depth W1C in the Z direction of the pit 16C located at the center of the base material when viewed from the bottom surface is in the Z direction of the pit 16L located at the X+ side. It may be deeper than the depth W1L and the depth W1R in the Z direction of the pit 16R located on the X- side. In addition, when viewed from the bottom surface shown in Figs. 4D, 4E, and 4F, the left side on the X-axis from the center of the light emitting device is the X+ side, and the right side is the X- side. Since the depth W1C of the pit 16C located in the center of the substrate is deep, the bonding strength between the light emitting device and the mounting substrate can be improved. When viewed from the bottom, the depth W1L in the Z direction of the pit 16L located on the X+ side and the depth W1R in the Z direction of the pit 16R located on the X- side are the pit located in the center of the substrate ( It may be deeper than the depth (W1C) of 16C). In addition, it is preferable that the depth W1L in the Z direction of the pit 16L located on the X+ side and the depth W1R in the Z direction of the pit 16R located on the X- side are substantially the same. By doing in this way, it becomes easy to suppress the deflection of the bonding member formed in the pit located on the X+ side and the bonding member formed in the pit located on the X- side, so that it is possible to prevent the light emitting device from tilting and mounting on the mounting substrate. It gets easier.

As shown in Fig. 4D, the width D1C in the X direction of the pit 16C located at the center of the base material when viewed from the bottom, and the width D1L and X- in the X direction of the pit 16L located at the X+ side. The width D1R in the X direction of the pit 16R located on the side may be approximately the same, and as shown in Figs. 4E and 4F, the X direction of the pit 16C located at the center of the substrate when viewed from the bottom surface The width D1C in D1C, the width D1L in the X direction of the pit 16L located on the X+ side and/or the width D1R in the X direction of the pit 16R located on the X- side may not be the same. When viewed from the bottom, the width D1C in the X direction of the pit 16C located at the center of the substrate, the width D1L in the X direction of the pit 16L located at the X+ side, and/or the pit located at the X- side Even when the width D1R in the X direction of (16R) is not the same, the depths of the plurality of pits in the Z direction may or may not be the same. In addition, it is preferable that the width D1L in the X direction of the pit 16L located on the X+ side and the width D1R in the X direction of the pit 16R located on the X- side are substantially the same when viewed from the bottom surface. By doing in this way, it becomes easy to suppress the deflection of the bonding member formed in the pit 16L located on the X+ side and the bonding member formed in the pit 16R located on the X- side. Thereby, it becomes easy to suppress that the light emitting device is mounted inclined to the mounting substrate.

In the rear surface, it is preferable that the plurality of pits 16 are positioned symmetrically with respect to the center line of the substrate parallel in the second direction (Y direction). In this way, when the light emitting device is mounted on the mounting substrate via the bonding member, the self-alignment works effectively, and the light emitting device can be mounted with high precision within the mounting range.

In the rear surface, it is preferable that the opening shape of each of the plurality of pits is substantially semicircular. A pit having a circular opening shape can be formed by drilling, and by cutting a part of the pit having a circular shape by dicing or the like, it is possible to easily form a pit having a substantially semicircular shape on the rear surface. Further, since the opening shape of the pit is a substantially semicircular shape without corners on the rear surface, concentration of the stress on the pit can be suppressed, so that the substrate can be prevented from cracking.

1A, 2A, and 2B, the light emitting device 1000 may include a light-transmitting member 30. As shown in FIGS. It is preferable that the light-transmitting member 30 is positioned on the light-emitting element 20. Since the light-transmitting member is positioned on the light-emitting device, it is possible to protect the light-emitting device 20 from external stress. It is preferable that the covering member 40 covers the side surface of the translucent member 30. In this way, the light from the light emitting device can be brought close to the point light source. By bringing the light emitting device closer to the point light source, for example, adjustment of light distribution by an optical system such as a lens becomes easy.

The light-emitting device 20 includes a mounting surface facing the substrate 10 and a light extraction surface 201 positioned on the opposite side of the mounting surface. As shown in Fig. 2A, in the case of flip-chip mounting of the light emitting device, the surface on which the positive and negative electrodes of the light emitting device are located and the surface opposite to the light extraction surface are used. The light-transmitting member 30 may be bonded to the light-emitting element 20 via the light guide member 50. The light guide member 50 may be positioned only between the light extraction surface 201 of the light emitting device and the light-transmitting member 30 and may adhere the light emitting device 20 and the covering member 40 to each other, or the light extraction surface 201 of the light emitting device. ) To the side surface 202 of the light-emitting element, and attach the light-emitting element 20 and the covering member 40 to each other. The light guide member 50 has a higher transmittance of light from the light emitting element 20 than the covering member 40. For this reason, by covering the light guide member 50 to the side surface 202 of the light emitting device, light emitted from the side surface of the light emitting device 20 is easily extracted to the outside of the light emitting device through the light guide member 50. You can increase the efficiency.

When there are a plurality of light-emitting elements 20, the peak wavelengths of one light-emitting element and the other light-emitting element may be the same or different. When the peak wavelength of one light-emitting device and the other light-emitting device are different, a light-emitting device with a peak wavelength of 430 nm or more and less than 490 nm (wavelength range in the blue region) and a peak wavelength of light emission is 490 nm or more and 570 nm or less It is preferable that the light emitting device is in the range of (wavelength range in the green region). In this way, the color rendering property of the light emitting device can be improved.

2A and 2B, the light-transmitting member 30 may contain the wavelength converting material 32. The wavelength conversion material 32 is a member that absorbs at least a portion of the primary light emitted by the light emitting device 20 and emits secondary light having a wavelength different from that of the primary light. By including the wavelength converting material 32 in the light-transmitting member 30, a mixed color light obtained by mixing the primary light emitted by the light emitting device 20 and the secondary light emitted by the wavelength converting material 32 may be output. For example, if a blue LED is used for the light emitting device 20 and a phosphor such as YAG is used for the wavelength conversion material 32, white light obtained by mixing the blue light of the blue LED and the yellow light that is excited by the blue light and emitted by the phosphor. It is possible to configure a light emitting device that outputs.

The wavelength conversion material may be uniformly dispersed in the light-transmitting member, or the wavelength conversion material may be unevenly distributed in the vicinity of the light-emitting element than the upper surface of the light-transmitting member 30. In this way, even if the wavelength conversion material 32 weak to moisture is used, the base material 31 of the light-transmitting member 30 also functions as a protective layer, so that deterioration of the wavelength conversion material 32 can be suppressed. In addition, as shown in Figs. 2A and 2B, the translucent member 30 may include a layer containing the wavelength converting material 32 and a layer 33 substantially not containing the wavelength converting material. The layer 33 substantially free of the wavelength conversion material is protected by a layer 33 that does not substantially contain the wavelength conversion material on the layer in which the translucent member 30 contains the wavelength conversion material 32. Since it also functions as a layer, deterioration of the wavelength conversion material 32 can be suppressed. As the wavelength conversion material 32 weak to moisture, a manganese activated fluoride phosphor is exemplified. The manganese-activated fluoride-based phosphor can emit light with a relatively narrow spectral line width, and is a preferable member from the viewpoint of color reproducibility.

As shown in FIG. 2B, the via hole 15 is provided in a hole penetrating the front surface 111 and the rear surface 112 of the base material 11. The via hole 15 includes a fourth wiring 151 covering the surface of the through hole of the substrate and a filling member 152 filled in the fourth wiring 151. The filling member 152 may be conductive or insulating. It is preferable to use a resin material for the filling member 152. In general, since the resin material before curing has higher fluidity than the metal material before curing, it is easy to fill in the fourth wiring 151. For this reason, by using a resin material for the filling member, it becomes easy to manufacture the substrate. As a resin material which is easy to fill, an epoxy resin is mentioned, for example. When using a resin material as a filling member, it is preferable to contain an additive member in order to lower a linear expansion coefficient. In this way, since the difference in the coefficient of linear expansion from the fourth wiring becomes small, it is possible to suppress the occurrence of a gap between the fourth wiring and the filling member due to heat from the light emitting element. As an additive member, silicon oxide is mentioned, for example. Moreover, when a metallic material is used for the filling member 152, heat dissipation can be improved.

As shown in FIG. 4A, the area of the via hole 15 on the rear surface is smaller than the area of the opening of the pit 16 on the rear surface. For this reason, although the via hole 15 penetrates the base material 11, since it is smaller than the area of the opening part of the pit 16 in the rear surface, it can suppress that the strength of the base material 11 falls.

As shown in Fig. 4A, it is preferable that the pit 16 is positioned between the via hole 15 and adjacent via holes when viewed from the rear. In other words, it is preferable that the pit 16 is located on a straight line connecting the via hole 15 and the adjacent via hole when viewed from the rear. In this way, heat from the light emitting device can be efficiently transferred from the via hole 15 to the third wiring 14 located in the pit 16. Heat transferred to the third wiring 14 is transferred to the mounting substrate through the bonding member, so that the heat dissipation of the light emitting device is improved.

Further, as shown in Fig. 4A, it is preferable that the via hole 15 is positioned between the pit 16 and the pit adjacent to each other when viewed from the rear surface. In other words, it is preferable that the via hole 15 is located on a straight line connecting the pit 16 and the adjacent pit when viewed from the rear. In this way, heat from the light emitting device can be efficiently transferred from the via hole 15 to the third wiring 14 located in the pit. Thereby, the heat dissipation property of the light emitting device is improved.

As shown in FIG. 2B, the light emitting device 20 includes at least a semiconductor laminate 23, and the semiconductor laminate 23 is provided with positive and negative electrodes 21 and 22. The positive and negative electrodes 21 and 22 are formed on the same side of the light emitting device 20, and the light emitting device 20 is preferably flip-chip mounted on the substrate 10. This eliminates the need for a wire for supplying electricity to the positive and negative electrodes of the light emitting device, so that the light emitting device can be downsized. Further, in this embodiment, the light emitting element 20 has the element substrate 24, but the element substrate 24 may be removed. When the light emitting element 20 is flip-chip mounted on the substrate 10, the positive and negative electrodes 21 and 22 of the light emitting element are connected to the first wiring 12 via a conductive adhesive member 60.

As shown in FIG. 2B, when the light emitting device 1000 includes a plurality of light emitting elements 20, it is preferable that the plurality of light emitting elements are installed side by side in the first direction (X direction). In this way, the width of the light emitting device 1000 in the second direction (Y direction) can be shortened, and thus the light emitting device can be made thinner. In addition, the number of light-emitting elements may be three or more, or may be one.

3C and 4A, the substrate 10 includes a substrate 11, a first wiring 12, and a second wiring 13. The substrate 11 includes a front surface 111 extending in a first direction that is a long side and a second direction that is a short side direction, a rear surface 112 located on the opposite side of the front surface, and a front surface ( It has a bottom surface 113 orthogonal to 111 and an upper surface 114 positioned on the opposite side of the bottom surface 113.

As shown in FIG. 4A, the light emitting device 1000 may be provided with an insulating film 18 covering a part of the second wiring 13. By providing the insulating film 18, it is possible to secure the insulating property on the back surface and to prevent a short circuit. Further, it is possible to prevent the second wiring from peeling off from the substrate.

As shown in FIG. 5A, it is preferable that the side surface 403 in the long side direction of the covering member 40 located on the bottom surface 113 side is inclined toward the inside of the light emitting device 1000 in the Z direction. In this way, when the light emitting device 1000 is mounted on the mounting substrate, contact between the side surface 403 of the covering member 40 and the mounting substrate is suppressed, and the mounting posture of the light emitting device 1000 is easily stabilized. Further, when the covering member 40 is thermally expanded, stress due to contact with the mounting substrate can be suppressed. It is preferable that the side surface 404 of the covering member 40 located on the upper surface 114 side in the long-side direction is inclined toward the inside of the light emitting device 1000 in the Z direction. In this way, contact between the side surface of the covering member 40 and the suction nozzle (collet) is suppressed, and damage to the covering member 40 during suction of the light emitting device 1000 can be suppressed. In addition, when the light emitting device 1000 is assembled into a lighting unit or the like, the upper surface 114 of the base material 11 preferentially contacts the peripheral member rather than the side surface 404 of the covering member 40, so that the covering member 40 Stress related to can be suppressed. In this way, the side surface 403 in the long side direction of the covering member 40 located on the bottom surface 113 side and the side surface 404 in the long side direction of the covering member 40 located on the upper surface 114 side are from the rear surface. It is preferable that it is inclined toward the inside of the light emitting device 1000 in the front direction (Z direction). The inclination angle θ of the covering member 40 can be appropriately selected, but from the viewpoint of easiness of obtaining such an effect and the strength of the covering member 40, it is preferably 0.3° or more and 3° or less, and 0.5° or more and 2° or less. It is more preferable, and it is even more preferable that it is 0.7 degrees or more and 1.5 degrees or less.

As shown in Figs. 5A and 5B, it is preferable that the right and left surfaces of the light emitting device 1000 have substantially the same shape. In this way, the light emitting device 1000 can be downsized.

As shown in Fig. 6, it is preferable that the side surface 405 of the covering member 40 in the short side direction and the side surface 105 of the substrate 10 in the short side direction are substantially on the same plane. By doing in this way, since the width in the long side direction (X direction) can be shortened, the light emitting device can be downsized.

<Embodiment 2>

The light emitting device 2000 according to Embodiment 2 of the present invention shown in FIGS. 7 to 9B is compared with the light emitting device 1000 according to Embodiment 1, the number of light emitting devices placed on the substrate, and The number of pits and via holes is different. The shape of the pit 16 is the same as that of the first embodiment.

As shown in Fig. 8A, in the light emitting device 2000, as in the first embodiment, the depth of the pit in the direction from the rear to the front is deeper on the bottom side than on the top side, so that the thickness of the substrate located on the top side of the pit Can be made thicker than the thickness of the substrate positioned on the bottom side of the pit. Thereby, a decrease in the strength of the substrate can be suppressed. Further, since the pit on the bottom side is deep, the volume of the bonding member formed in the pit increases, so that the bonding strength between the light emitting device 2000 and the mounting substrate can be improved.

As shown in Fig. 8B, the number of light-emitting elements may be one. Since there is only one light-emitting element, the width in the first direction (X direction) can be shorter than when there are a plurality of light-emitting elements, so that the light-emitting device can be downsized. Since the width of the light emitting device in the first direction (X direction) is shortened, the number of pits may be appropriately changed. For example, as shown in Fig. 9A, the number of pits 16 may be two. Further, the number of pits 16 may be one, or three or more pits 16 may be used.

As shown in Fig. 9B, it is preferable that a plurality of via holes 15 are located between the pit 16 and the adjacent pit when viewed from the rear. In other words, it is preferable that the plurality of via holes 15 are located on a straight line connecting the pit 16 and the adjacent pit when viewed from the rear. In this way, heat from the light emitting device can be efficiently transferred from the via hole 15 to the third wiring 14 located in the pit. Thereby, the heat dissipation property of the light emitting device is improved.

<Embodiment 3>

The light emitting device 3000 according to the third embodiment of the present invention shown in Figs. 10 to 14 is different from the light emitting device 1000 according to the first embodiment in that it includes a pit 16 having a different shape. .

Like the light emitting device 1000, the light emitting device 3000 includes a substrate 10, at least one light emitting device 20, and a covering member 40. The substrate 10 includes a substrate 11, a first wiring 12, a second wiring 13, a third wiring 14, and a via hole 15. The substrate 11 includes a front surface 111 extending in a first direction that is a long side and a second direction that is a short side direction, a rear surface 112 located on the opposite side of the front surface, and a front surface ( A bottom surface 113 orthogonal to 111, an upper surface 114 located on the opposite side of the bottom surface 113, and a side surface 115 located between the front surface 111 and the rear surface 112 are provided. The base material 11 further has a plurality of pits 16. The plurality of pits 16 includes a central pits 161 opened to the rear surface 112 and the bottom surface 113, and an end pits 162 opened to the rear surface 112 and the bottom surface 113 and the side surface 115. Equipped. The third wiring 14 covers the inner wall of the pit 16 and is electrically connected to the second wiring 13.

As shown in FIG. 14, in the light emitting device 3000, since the depth of the central pit 161 and/or the end pit 162 in the front direction from the rear is deeper on the bottom side than on the top side, the central pit 161 ) And/or the thickness of the substrate positioned on the upper surface side of the end pit 162 may be thicker than the thickness of the substrate positioned on the bottom side of the central pit 161 and/or the end pit 162. Thereby, a decrease in the strength of the substrate can be suppressed. In addition, since the central pit 161 and/or the end pit 162 on the bottom side is deep, the volume of the bonding member formed in the central pit 161 and/or the end pit 162 increases, so that the light emitting device 3000 ) And the mounting substrate can improve the bonding strength. In addition, at least one central pit 161 and/or an end pit 162 is sufficient.

The end pit 162 is also open to the side surface 115 of the base material, as shown in FIGS. 11 to 14. Accordingly, since the bonding member is also located on the side surface 115 side of the substrate, the bonding strength between the light emitting device 3000 and the mounting substrate can be further improved. In the case where the light emitting device 3000 is a side-emitting type in which the bottom surface 113 of the base material 11 and the mounting substrate are mounted so as to be opposed to each other, it is particularly preferable to have an end pit 162. Since the end pit 162 is provided, the side surface 115 of the base material can be fixed, so that the light emitting device 3000 is inclined on the mounting substrate, or the back surface of the base material rises up against the mounting board. It can suppress the outbreak. At least one end pit 162 may be sufficient, but it is preferable that there are a plurality of ends. Since there are a plurality of end pits 162, the bonding strength between the light emitting device 3000 and the mounting substrate can be further improved. When there are a plurality of end pits 162, it is preferable that the end pits are located at both ends of the substrate when viewed from the rear surface. By doing in this way, it is possible to further suppress the occurrence of the Manhattan phenomenon.

When viewed from the rear, the shape of the central pit 161 is a substantially semicircular shape that is half of the circular shape, and when the shape of the end pit 162 is approximately one-quarter of the circular shape, the central pit 161 The circular diameters of the and end pit 162 may not be the same or may be substantially the same. If the diameter of the circular shape of the central pit 161 and the end pit 162 is approximately the same, it is preferable because the central pit 161 and the end pit 162 can be formed by a single drill. In addition, when the central pit 161 and the end pit 162 have an inclined portion inclined in a direction in which the thickness of the base material 11 increases from the bottom surface 113 when viewed from the cross section, the central pit 161 The angle of the inclined portion and the inclined portion of the end pit 162 may be different, or may be substantially the same. If the angle of the inclined portion of the central pit 161 and the inclined portion of the end pit 162 is approximately the same, the central pit 161 and the end pit 162 can be formed by a single drill, which is preferable.

As shown in Figs. 15 and 16, one light-transmitting member 30 may be positioned on a plurality of light-emitting elements. By doing in this way, since the area of the light-transmitting member can be increased when viewed from the front, the light extraction efficiency of the light emitting device is improved. Further, since the light emitting device has one light emitting surface, unevenness in luminance of the light emitting device can be reduced.

When one light-transmitting member 30 is located on a plurality of light-emitting elements, the light-guide members 50 that bond each light-emitting element 20 and the light-transmitting member 30 may be connected or are spaced apart from each other. You may have it. As shown in Fig. 16, it is preferable that the light guide member is positioned so as to connect between one light emitting element and the other light emitting element. In this way, since the light from the light-emitting element can be guided to the light-transmitting member through the light-guiding member even between one light-emitting element and the other light-emitting element, it is possible to reduce uneven brightness of the light-emitting device. In addition, since the portion of the covering member positioned between one light emitting element and the other light emitting element is reduced, deterioration of the covering member due to light from the light emitting element can be suppressed. Further, as the light guide member, it is preferable to use a material that is less likely to be deteriorated by light from the light emitting element than the covering member.

<Embodiment 4>

The light-emitting device 4000 according to the fourth embodiment of the present invention shown in FIGS. 17 to 21 is different from the light-emitting device 2000 according to the second embodiment in that it has a pit 16 having a different shape. .

As shown in FIG. 21, the light emitting device 4000 is provided with an end pit 162. Since the depth of the end pit in the front direction from the back is deeper on the bottom side than on the top side, the thickness of the base material located on the upper surface side of the end pit can be made thicker than the thickness of the base material located on the bottom side of the pit. Thereby, a decrease in the strength of the substrate can be suppressed. Further, since the end pit on the bottom side is deep, the volume of the bonding member formed in the end pit increases, so that the bonding strength between the light emitting device 4000 and the mounting substrate can be improved.

The end pit 162 is also open to the side surface 115 of the base material, as shown in FIGS. 18 to 21. Accordingly, since the bonding member is also located on the side surface 115 side of the substrate, the bonding strength between the light emitting device 4000 and the mounting substrate can be further improved.

<Embodiment 5>

The light emitting device 5000 according to the fifth embodiment of the present invention shown in FIG. 22 is different from the light emitting device 4000 according to the fourth embodiment in that it has a central pit 161.

Since the light emitting device 5000 includes the central hole 161 and the end hole 162, the number of locations that can be fixed by the bonding member is increased, so that the bonding strength between the light emitting device and the mounting substrate can be improved. Further, the depth of the central pit 161 and/or the end pit 162 in the front direction from the rear surface is deeper on the bottom side than on the top side. Thereby, the bonding strength between the light emitting device 5000 and the mounting substrate can be improved.

<Embodiment 6>

In the light emitting device 6000 according to the sixth embodiment of the present invention shown in Fig. 23, compared to the light emitting device 1000 according to the first embodiment, the shape of the second wiring and the insulating film, and the pit (center) in the center of the light emitting device It is different in that it does not have a pit).

The second wiring 13 of the light emitting device 6000 is positioned between the two end pits when viewed from the rear, and includes an exposed portion 131 exposed from the insulating film 18. The exposed portion 131 is surrounded by the insulating film 18 except for the bottom surface 113 side. By disposing the bonding member on the exposed portion 131, the bonding strength between the light emitting device and the mounting substrate may be improved. The shape of the exposed portion 131 as viewed from the rear surface may be a square shape, a hemispherical shape, or an arbitrary shape. The shape of the exposed portion 131 as viewed from the rear can be easily changed by changing the shape of the insulating film. It is preferable that the shape of the exposed portion 131 as viewed from the rear is provided with the narrow portion 132 on the bottom side and the wide portion 133 at a position extending in the second direction (Y direction). By arranging the narrow portion, when the light emitting device is mounted, it is possible to suppress the flux or the like contained in the bonding member from penetrating down the light emitting element along the surface of the exposed portion 131. In addition, the shape of the second wiring 13 exposed from the insulating film 18 is preferably positioned symmetrically with respect to the center line of the substrate parallel in the second direction (Y direction). In this way, when the light emitting device is mounted on the mounting substrate via the bonding member, the self-alignment works effectively, and the light emitting device can be mounted with high precision within the mounting range.

<Embodiment 7>

The light-emitting device 7000 according to the seventh embodiment of the present invention shown in FIG. 24 is different from the light-emitting device 4000 according to the fourth embodiment in the shape of the second wiring and the insulating film.

Like the light emitting device 6000, the second wiring 13 of the light emitting device 7000 is located between the two end pits when viewed from the rear, and has an exposed portion 131 exposed from the insulating film 18. . The exposed portion 131 is surrounded by the insulating film 18 except for the bottom surface 113 side. By disposing the bonding member on the exposed portion 131, the bonding strength between the light emitting device 7000 and the mounting substrate can be improved.

The shape of the land pattern of the mounting substrate on which the light emitting device is mounted is not particularly limited, and may be a substantially rectangular shape or a substantially circular shape. For example, as shown in Fig. 25A, the land pattern of the mounting substrate on which the light emitting device according to the first embodiment is mounted includes a wide wide portion W10 and a narrow narrow portion W9 in the X direction. You may have it. When viewed from the bottom, the narrow portion W9 is positioned at a position overlapping the pit, so that self-alignment when the light emitting device is mounted on a mounting substrate can be improved. In addition, when the land pattern includes the wide portion W10, the area of the land pattern when viewed from the bottom surface can be increased. Thereby, it is possible to suppress unevenness in the thickness of the bonding member. In addition, as in the light emitting device according to the first embodiment, the land pattern of the mounting substrate on which the light emitting device having the maximum depth of the pit in the Z direction is mounted is the land pattern as shown in FIG. 25B. It is preferable that the length W12 in the Z direction at the center of the pattern is longer than the length W11 in the Z direction at the end of the land pattern. By doing in this way, the self-alignment property when mounting a light emitting device on a mounting board can be improved. In addition, as shown in FIG. 25C, the land pattern includes a wide portion W10 and a narrow portion W9, and the length W14 in the central Z direction in the narrow portion of the land pattern is the land pattern. It may be longer than the length W13 in the Z direction of the end portion of the narrower width of. By doing in this way, the self-alignment property at the time of mounting the light emitting device according to the first embodiment on the mounting substrate can be improved, and nonuniformity in the thickness of the bonding member can be suppressed.

In addition, as in the light emitting device according to the fourth embodiment, the land pattern of the mounting substrate on which the light emitting device is mounted in which the depth of the pit in the Z direction increases as the distance from the center of the light emitting device increases, as shown in Fig. 26A. It is preferable that the length W15 in the Z direction of the land pattern far from the center of is longer than the length W16 in the Z direction of the land pattern closer to the center of the light emitting device. By doing in this way, the self-alignment property when mounting a light emitting device on a mounting board can be improved. In addition, as shown in FIG. 26B, the land pattern includes a wide portion W10 and a narrow narrow portion W9 in the X direction, and a land pattern far from the center of the light emitting device. It is preferable that the length W17 of the end of the narrow width of the light emitting device in the Z direction is longer than the length W18 of the end of the narrow width of the land pattern near the center of the light emitting device. When viewed from the bottom, the narrow portion is positioned at a position overlapping the end pit, thereby improving self-alignment when mounting the light emitting device on the mounting substrate. In addition, when the land pattern includes a wide portion, the area of the land pattern when viewed from the bottom surface can be increased. Thereby, it is possible to suppress unevenness in the thickness of the bonding member. Further, the length W17 in the Z direction of the end of the narrow portion of the land pattern far from the center of the light emitting device is longer than the length W18 of the end of the narrow portion of the land pattern near the center of the light emitting device. , It is possible to improve self-alignment when the light emitting device is mounted on a mounting substrate.

<Embodiment 8>

The light emitting device 8000 according to the eighth embodiment of the present invention shown in Figs. 27 to 30 is compared with the light emitting device 1000 according to the first embodiment, the number of light emitting elements mounted on the substrate and the substrate The number of pits and via holes, and the shape of the translucent member are different. The shape of the pit 16 is the same as that of the first embodiment.

As shown in Fig. 28A, in the light emitting device 8000, as in the first embodiment, the depth of the pit in the direction from the rear to the front is deeper on the bottom side than on the top side, so that the thickness of the base material located on the top side of the pit Can be made thicker than the thickness of the substrate positioned on the bottom side of the pit. Thereby, a decrease in the strength of the substrate can be suppressed. Further, since the pit on the bottom side is deep, the volume of the bonding member formed in the pit increases, so that the bonding strength between the light emitting device 8000 and the mounting substrate can be improved.

As shown in Fig. 28B, the number of light-emitting elements may be three. The peak wavelengths of the three light-emitting devices may be the same, the peak wavelengths of the three light-emitting devices may be different, and the peak wavelengths of the two light-emitting devices are the same, and the peak wavelength of one light-emitting device is the same as that of the two light-emitting devices. It may be different. In addition, in the present specification, when the peak wavelength of the light emitting device is the same, it means that a variation of about 5 nm is allowed. When the peak wavelength of the light emitting device is different, as shown in FIG. 28B, the first light emitting device 20B having a peak wavelength of light emission in a range of 430 nm or more and less than 490 nm (wavelength range in the blue region) and the peak wavelength of light emission It is preferable to have the second light emitting element 20G in the range of 490 nm or more and 570 nm or less (wavelength range in the green region). In particular, as the second light-emitting device 20G, it is preferable to use a light-emitting device having a half-value width of 40 nm or less, and more preferably a light-emitting device having a half-value width of 30 nm or less. Accordingly, compared to the case where green light is obtained using a green phosphor, green light can easily have a sharp peak. As a result, the liquid crystal display device provided with the light emitting device 8000 can achieve high color reproducibility.

The arrangement of the first light emitting device 20B and the second light emitting device 20G is not particularly limited, but as shown in FIG. 28B, the first light emitting device 20B and the green light emitting device are blue light emitting devices in order from the left. It is preferable that the phosphorous second light-emitting device 20G and the first light-emitting device 20B, which is a blue light-emitting device, are arranged side by side. Since the first light-emitting elements 20B and the second light-emitting elements 20G are alternately arranged side by side, color mixing of the light-emitting device may be improved. Further, the second light emitting device, the first light emitting device, and the second light emitting device may be arranged side by side in order from the left. In addition, depending on the light-emitting characteristics to be obtained, the number of first light-emitting elements 20B may be larger than the number of second light-emitting elements 20G, and the number of second light-emitting elements 20G may be higher than the first light-emitting elements ( The number of the first light emitting elements 20B and the second light emitting elements 20G may be the same. By adjusting the number of light-emitting elements, it is possible to obtain a light-emitting device having an arbitrary color tone or amount of light.

As shown in FIG. 28B, when one light-transmitting member 30 is positioned on the first light-emitting device 20B and the second light-emitting device 20G, the wavelength conversion material 32 is used as the second light-emitting device ( It is preferable that there is hardly any absorbing green light of 20G) and emitting red light. That is, it is preferable that the wavelength conversion material 32 does not substantially convert green light into red light. In addition, it is preferable that the reflectance of the wavelength conversion material 32 for green light is 70% or more on average over the range of the wavelength of green light. By using the wavelength conversion material 32 as a phosphor having high reflectance for green light, that is, less absorbing green light, that is, a phosphor having less wavelength conversion of green light, designing a light emitting device can be facilitated.

When a red phosphor having a large absorption of green light is used, the output balance of the light emitting device is reviewed in consideration of wavelength conversion by the wavelength conversion material 32 for not only the first light emitting device 20B but also the second light emitting device 20G. I have to do it. On the other hand, if the wavelength conversion material 32 which hardly converts green light is used, the output balance of the light emitting device can be designed only by considering only the wavelength conversion of blue light emitted by the first light emitting device 20B.

As such a preferable wavelength conversion material 32, the following red phosphors are mentioned. The wavelength converting material 32 is at least one or more of these.

The first kind is a red phosphor whose composition is represented by the following general formula (I).

A ₂ MF ₆ ：Mn ⁴⁺ ......(I)

However, in the general formula (I), A is at least one selected from the group consisting of K, Li, Na, Rb, Cs, and NH ⁴⁺ , and M is composed of a group 4 element and a group 14 element. It is at least one element selected from the group.

Group 4 elements are titanium (Ti), zirconium (Zr) and hafnium (Hf). Elements of Group 14 are silicon (Si), germanium (Ge), tin (Sn), and lead (Pb).

Specific examples of the first type of red phosphor include K ₂ SiF ₆ :Mn ^{4 +} , K ₂ (Si, Ge)F ₆ :Mn ^{4 +} , and K ₂ TiF ₆ :Mn ^{4 +} .

The second type, the composition is 3.5MgO · 0.5MgF ₂ · GeO _2: a red phosphor or a red phosphor is represented by Mn ^{+ 4,} the composition represented by the following formula (II) below.

(xa)MgO·a(Ma)O·b/2(Mb) ₂ O ₃ ·yMgF ₂ ·c(Mc)X ₂ ·(1-de)GeO ₂ ·d(Md)O ₂ ·e(Me) ₂ O ₃ ：Mn ⁴⁺ ......(II)

However, in the general formula (II), Ma is at least one selected from Ca, Sr, Ba, and Zn, Mb is at least one selected from Sc, La, and Lu, and Mc is, Ca, Sr, Ba , At least one selected from Zn, X is at least one selected from F, Cl, Md is at least one selected from Ti, Sn, and Zr, and Me is at least one selected from B, Al, Ga, and In It is one. In addition, for x, y, a, b, c, d, e, 2≤x≤4, 0<y≤2, 0≤a≤1.5, 0≤b<1, 0≤c≤2, 0≤ d≤0.5, 0≤e<1.

Since the light emitting device 8000 has three light emitting elements, the width in the first direction (X direction) tends to be longer than in the case of one light emitting element. For this reason, the number of pits and via holes may be appropriately changed. For example, as shown in Fig. 30, the number of pits 16 and via holes may be set to four.

As shown in Fig. 31, one light-transmitting member 30 may be positioned on each of the first light-emitting element and the second light-emitting element, and as shown in Fig. 28B, one light-transmitting member 30 is It may be located on the device. As shown in FIG. 31, when one light-transmitting member 30 is positioned on each of the first light-emitting device and the second light-emitting device, the light-transmitting member 30 and the second light-emitting device are positioned on the first light-emitting device 20B. The material of the wavelength converting material 32 contained in the translucent member 30 positioned on the element 20G may be the same or different. For example, when the wavelength conversion material 32 absorbs green light of the second light emitting device 20G and emits red light, the light-transmitting member 30 positioned on the first light emitting device 20B The wavelength converting material 32, which is a red phosphor, is contained, and the wavelength converting material 32, which is a red phosphor, does not need to be contained in the light-transmitting member 30 positioned on the second light emitting element 20G. In this way, it is possible to design the output balance of the light-emitting device only by considering only the wavelength conversion of blue light emitted by the first light-emitting element 20B. When one light-transmitting member 30 is disposed on the first light-emitting device and the second light-emitting device, respectively, the light-transmitting member 30 and the second light-emitting device 20G are disposed on the first light-emitting device 20B. A covering member is formed between the translucent members 30 positioned thereon. As shown in Fig. 28B, when one light-transmitting member 30 is located on a plurality of light-emitting elements, the area of the light-transmitting member 30 when viewed from the front can be increased, and thus light extraction efficiency of the light-emitting device This is improved. Further, since the light emitting device has one light emitting surface, unevenness in luminance of the light emitting device can be reduced.

When one light-transmitting member 30 is located on a plurality of light-emitting elements, the light-guide members 50 that bond each light-emitting element 20 and the light-transmitting member 30 may be connected or are spaced apart from each other. You may have it. As shown in Fig. 28B, it is preferable that the light guide member 50 is positioned so as to connect between one light emitting element and the other light emitting element. In this way, since the light from the light-emitting element can be guided to the light-transmitting member through the light-guiding member even between one light-emitting element and the other light-emitting element, it is possible to reduce uneven brightness of the light-emitting device.

As shown in Figs. 28B and 31, the light-transmitting member 30 may include a layer containing the wavelength conversion material 32 and a layer 33 that does not substantially contain the wavelength conversion material. The layer 33 substantially free of the wavelength conversion material is protected by a layer 33 that does not substantially contain the wavelength conversion material on the layer in which the translucent member 30 contains the wavelength conversion material 32. Since it also functions as a layer, deterioration of the wavelength conversion material 32 can be suppressed. As shown in Fig. 31, when one light-transmitting member 30 is positioned on the first light-emitting device and the second light-emitting device, wavelength conversion of the light-transmitting member 30 on the first light-emitting device 20B Even if the thickness of the layer 33 that does not contain a material substantially and the thickness of the layer 33 that does not contain a wavelength conversion material of the light-transmitting member 30 positioned on the second light emitting device 20G are the same, It can be nice and different. In addition, when one light-transmitting member 30 is positioned on each of the first light-emitting device and the second light-emitting device, the wavelength conversion material 32 of the light-transmitting member 30 disposed on the first light-emitting device 20B The thickness of the layer containing? And the thickness of the layer containing the wavelength conversion material 32 of the light-transmitting member 30 positioned on the second light-emitting element 20G may be the same or different, respectively. In addition, in this specification, when the thickness is the same, a difference of about 5 μm is allowed.

Hereinafter, each component in the light emitting device according to the embodiment of the present invention will be described.

(Substrate (10))

The substrate 10 is a member on which a light emitting element is mounted. The board|substrate 10 is comprised by the base material 11, the 1st wiring 12, the 2nd wiring 13, the 3rd wiring 14, and the via hole 15 at least.

(Material (11))

The substrate 11 can be constituted by using an insulating member such as resin or fiber-reinforced resin, ceramics, and glass. Examples of the resin or fiber-reinforced resin include epoxy, glass epoxy, bismaleimide triazine (BT), and polyimide. Examples of ceramics include aluminum oxide, aluminum nitride, zirconium oxide, zirconium nitride, titanium oxide, titanium nitride, or mixtures thereof. Among these substrates, it is particularly preferable to use a substrate having physical properties close to the linear expansion coefficient of the light emitting device. The lower limit of the thickness of the substrate can be appropriately selected, but from the viewpoint of the strength of the substrate, it is preferably 0.05 mm or more, and more preferably 0.2 mm or more. In addition, the upper limit of the thickness of the substrate is preferably 0.5 mm or less, and more preferably 0.4 mm or less from the viewpoint of the thickness (depth) of the light emitting device.

(1st wiring 12, 2nd wiring 13, 3rd wiring 14)

The first wiring is disposed on the front surface of the substrate and is electrically connected to the light emitting element. The second wiring is disposed on the rear surface of the substrate, and is electrically connected to the first wiring through a via hole. The third wiring covers the inner wall of the pit and is electrically connected to the second wiring. The first wiring, the second wiring, and the third wiring may be formed of copper, iron, nickel, tungsten, chromium, aluminum, silver, gold, titanium, palladium, rhodium, or an alloy thereof. A single layer or multiple layers of these metals or alloys may be used. In particular, copper or a copper alloy is preferred from the viewpoint of heat dissipation. In addition, a layer of silver, platinum, aluminum, rhodium, gold, or an alloy thereof may be provided on the surface layer of the first wiring and/or the second wiring from the viewpoint of wettability and/or light reflectivity of the conductive adhesive member. good.

(Beer hole (15))

The via hole 15 is a member provided in a hole penetrating the front and rear surfaces of the substrate 11 and electrically connecting the first wiring and the second wiring. The via hole 15 is constituted by the fourth wiring 151 covering the surface of the through hole of the substrate and the filling member 152 filled in the fourth wiring 151. For the fourth wiring 151, a conductive member similar to the first wiring, the second wiring, and the third wiring can be used. For the filling member 152, a conductive member may be used or an insulating member may be used.

(Insulation film (18))

The insulating film 18 is a member that aims at securing the insulating properties on the back surface and preventing a short circuit. The insulating film may be formed of any of those used in the field. For example, a thermosetting resin or a thermoplastic resin may be mentioned.

(Light-emitting device (20))

The light-emitting device 20 is a semiconductor device that emits light by itself by applying a voltage, and an existing semiconductor device composed of a nitride semiconductor or the like can be applied. As the light emitting element 20, an LED chip is mentioned, for example. The light-emitting element 20 is provided with at least the semiconductor laminate 23, and in many cases further includes an element substrate 24. The shape as viewed from the top surface of the light-emitting element is preferably a rectangle, particularly a square shape, or a rectangular shape long in one direction, but other shapes may be used. For example, the luminous efficiency can be improved if it is a hexagonal shape. The side surface of the light-emitting element may be perpendicular to the upper surface, or may be inclined inward or outward. In addition, the light emitting device has positive and negative electrodes. The positive and negative electrodes can be made of gold, silver, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel, or an alloy thereof. The emission peak wavelength of the light emitting device can be selected from the ultraviolet region to the infrared region depending on the semiconductor material and its mixed ratio. As the semiconductor material, it is preferable to use a nitride semiconductor, which is a material capable of emitting short wavelength light that can efficiently excite a wavelength conversion material. The nitride semiconductor is mainly represented _{by the} general formula In _x Al _y Ga _{1 -x- y} N (0≦x, 0≦y, x+y≦1). The emission peak wavelength of the light-emitting device is preferably 400 nm or more and 530 nm or less, more preferably 420 nm or more and 490 nm or less, and 450 nm or more and 475 nm or less, from the viewpoints of luminous efficiency, excitation of the wavelength conversion material, and a mixed color relationship with the light emission. Is more preferred. In addition, InAlGaAs-based semiconductors, InAlGaP-based semiconductors, zinc sulfide, zinc selenide, silicon carbide, and the like can also be used. The element substrate of the light-emitting element is a crystal growth substrate capable of growing crystals of a semiconductor mainly constituting a semiconductor laminate, but may be a bonding substrate that bonds to a semiconductor element structure separated from the crystal growth substrate. Since the element substrate has light transmission properties, it is easy to adopt flip chip mounting, and it is easy to increase light extraction efficiency. Examples of the base material of the device substrate include sapphire, gallium nitride, aluminum nitride, silicon, silicon carbide, gallium arsenide, gallium phosphorus, indium phosphorus, zinc sulfide, zinc oxide, zinc selenide, and diamond. Among them, sapphire is preferable. The thickness of the element substrate can be appropriately selected, for example, 0.02 mm or more and 1 mm or less, and preferably 0.05 mm or more and 0.3 mm or less from the viewpoint of the strength of the element substrate and/or the thickness of the light emitting device.

(Translucent member 30)

The light-transmitting member is provided on the light emitting device and is a member that protects the light emitting device. The translucent member is composed of at least the following base materials. In addition, the light-transmitting member can function as a wavelength conversion material by containing the following wavelength conversion material 32 in the base material. Even when the light-transmitting member includes a layer containing a wavelength converting material and a layer substantially not containing a wavelength converting material, the base material of each layer is configured as follows. In addition, the base material of each layer may be the same or different. However, it is not essential that the translucent member has a wavelength converting material. In addition, as the light-transmitting member, a sintered body of a wavelength conversion material and an inorganic material such as alumina, or a plate crystal of a wavelength conversion material may be used.

(Base material of translucent member (31))

The base material 31 of the light-transmitting member may have a light-transmitting property for light emitted from the light-emitting element. In addition, "transmissivity" means that the light transmittance at the emission peak wavelength of the light-emitting element is preferably 60% or more, more preferably 70% or more, and even more preferably 80% or more. As the base material of the translucent member, a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, or a modified resin thereof can be used. It may be glass. Among them, silicone resins and modified silicone resins are preferable because they are excellent in heat resistance and light resistance. As a specific silicone resin, a dimethyl silicone resin, a phenyl-methyl silicone resin, and a diphenyl silicone resin are mentioned. The light-transmitting member can be constituted by a single layer of one of these base materials, or by stacking two or more of these base materials. In addition, the "modified resin" in this specification shall contain a hybrid resin.

The base material of the translucent member may contain various fillers in the resin or glass. As this filler, silicon oxide, aluminum oxide, zirconium oxide, zinc oxide, etc. are mentioned. The filler can be used alone or in combination of two or more of these. In particular, silicon oxide having a small coefficient of thermal expansion is preferable. In addition, by using nanoparticles as a filler, it is possible to increase scattering of light emitted by the light emitting device and reduce the amount of the wavelength conversion material used. In addition, the nanoparticle is a particle having a particle diameter of 1 nm or more and 100 nm or less. In addition, "particle size" in this specification is defined as D50, for example.

(Wavelength conversion material (32))

The wavelength converting material absorbs at least a portion of the primary light emitted by the light emitting device and emits secondary light having a wavelength different from that of the primary light. The wavelength conversion material can be used singly or in combination of two or more of the specific examples shown below.

As a wavelength converting substance that emits green light, a yttrium-aluminum-garnet-based phosphor (for example, Y ₃ (Al, Ga) ₅ O ₁₂ :Ce), a lutetium-aluminum-garnet-based phosphor (e.g., Lu ₃ (Al, Ga) ₅ O ₁₂ :Ce), terbium/aluminum/garnet-based phosphor (eg, Tb ₃ (Al, Ga) ₅ O ₁₂ :Ce)-based phosphor, silicate-based phosphor (eg (Ba, Sr) ₂ SiO ₄ :Eu), a chlorosilicate phosphor (for example, Ca ₈ Mg(SiO ₄ ) ₄ Cl ₂ :Eu), β-sialon-based phosphors (e.g., Si _{6 -z} Al _z O _z N _8-z : Eu (0<z<4.2)), SGS-based phosphors (e.g., SrGa ₂ S ₄ :Eu) Can be lifted. As a wavelength converting material for yellow light emission, an α-sialon-based phosphor (e.g., M _z (Si, Al) ₁₂ (O, N) ₁₆ (however, 0<z≤2, M is Li, Mg, Ca, Y and a lanthanide element excluding La and Ce), etc. In addition, among the wavelength conversion materials that emit green light, there are also wavelength conversion materials that emit yellow light, and for example, yttrium-aluminum-garnet-based phosphors are used. , By substituting a part of Y with Gd, the emission peak wavelength can be shifted to the long wavelength side, thus enabling yellow light emission, and among them, some wavelength conversion materials capable of emitting orange light are also available. Alumino calcium silicate (CASN or SCASN)-based phosphors (for example, (Sr, Ca)AlSiN ₃ : Eu), etc. In addition, manganese-activated fluoride-based phosphors (general formula (I) A ₂ M _{1 -} of _a Mn _a F _6] is a phosphor represented by (note that the formula (I), a is a least one member selected from the group consisting of K, Li, Na, Rb, Cs and NH _4, M is , At least one element selected from the group consisting of a group 4 element and a group 14 element, and a satisfies 0<a<0.2)) As a representative example of this manganese-activated fluoride-based phosphor, There is a phosphor of manganese-activated potassium fluoride silicate (for example, K ₂ SiF ₆ :Mn).

(Cover member (40))

From the viewpoint of the light extraction efficiency of the light-reflective coating member, the light reflectance at the emission peak wavelength of the light-emitting element is preferably 70% or more, more preferably 80% or more, and more preferably 90% or more. More preferable. Moreover, it is preferable that the covering member is white. Therefore, it is preferable that the covering member contains a white pigment in the base material. The covering member passes through a liquid state before curing. The covering member can be formed by transfer molding, injection molding, compression molding, potting, or the like.

(Base material of covering member)

Resin can be used as the base material of the covering member, and examples thereof include silicone resins, epoxy resins, phenolic resins, polycarbonate resins, acrylic resins, or modified resins thereof. Among them, silicone resins and modified silicone resins are preferable because of their excellent heat resistance and light resistance. As a specific silicone resin, a dimethyl silicone resin, a phenyl-methyl silicone resin, and a diphenyl silicone resin are mentioned. In addition, the base material of the covering member may contain the same filler as the translucent member described above.

(White pigment)

The white pigment is one of titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide, zirconium oxide, and silicon oxide. May be used alone or in combination of two or more of them. The shape of the white pigment can be appropriately selected and may be amorphous or crushed, but a spherical shape is preferable from the viewpoint of fluidity. In addition, the particle diameter of the white pigment may be, for example, about 0.1 µm or more and 0.5 µm or less, but in order to increase the effect of light reflection or coating, the smaller the more preferable. The content of the white pigment in the light reflective coating member can be appropriately selected, but from the viewpoints of light reflectivity and viscosity in a liquid state, for example, 10 wt% or more and 80 wt% or less is preferable, and 20 wt% or more and 70 wt% or less Is more preferable, and 30 wt% or more and 60 wt% or less are even more preferable. In addition, "wt%" is a weight percent, and represents the ratio of the weight of the material to the total weight of the light reflective covering member.

(Light guide member 50)

The light guide member is a member that bonds the light emitting element and the light-transmitting member, and guides light from the light-emitting element to the light-transmitting member. As the base material of the light guide member, a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, or a modified resin thereof may be mentioned. Among them, silicone resins and modified silicone resins are preferable because of their excellent heat resistance and light resistance. As a specific silicone resin, a dimethyl silicone resin, a phenyl-methyl silicone resin, and a diphenyl silicone resin are mentioned. Further, the base material of the light guide member may contain the same filler as the light-transmitting member described above. In addition, the light guide member can be omitted.

(Conductive adhesive member (60))

The conductive adhesive member is a member that electrically connects the electrode of the light emitting device and the first wiring. Examples of the conductive adhesive member include bumps such as gold, silver, copper, metal powders such as silver, gold, copper, platinum, aluminum, palladium, and a metal paste containing a resin binder, tin-bismuth, tin-copper, tin-silver , Gold-tin type solder, or a low melting point metal, etc., can be used.

[Industrial availability]

A light emitting device according to an embodiment of the present invention includes a backlight device for a liquid crystal display, various lighting devices, large displays, various display devices such as advertisements and destination guides, a projector device, and furthermore, a digital video camera, facsimile, copier, and scanner. It can be used for an image reading device or the like.

1000, 2000: light emitting device
10: substrate
11: description
12: first wiring
13: the second wiring
14: third wiring
15: Beer Hall
151: fourth wiring
152: filling member
16: pit
18: insulating film
20: light-emitting element
30: light-transmitting member
40: covering member
50: light guide member
60: conductive adhesive member

Claims (5)

A light-emitting module comprising a light-emitting device and a mounting substrate on which the light-emitting device is mounted,
The light emitting device,
A front extending in a first direction that is a long side and a second direction that is a short side direction, a rear surface located on the opposite side of the front side, a bottom surface adjacent to the front side, orthogonal to the front side, and a side opposite to the bottom surface A substrate including a substrate having an upper surface positioned, a first wiring disposed on the front surface, a second wiring disposed on the rear surface, and a via hole electrically connecting the first wiring and the second wiring;
At least one light emitting device electrically connected to the first wiring and mounted on the first wiring,
And a light-reflective coating member covering the side surface of the light emitting device and the front surface of the substrate,
The substrate has a plurality of pits open to the rear surface and the bottom surface and arranged in the first direction,
The plurality of pits are spaced apart from the via hole when viewed from the front,
The substrate has a third wiring covering the inner walls of the plurality of pits and electrically connected to the second wiring,
Each of the depths of the plurality of pit in the front direction from the rear surface is deeper on the bottom side than on the top side,
The mounting substrate,
A plurality of land patterns disposed at positions respectively corresponding to openings of the plurality of pits in the bottom surface of the substrate provided in the substrate of the light emitting device,
Each of the plurality of land patterns,
A narrow portion and a wide portion disposed in a third direction orthogonal to the first direction and the second direction with respect to the narrow portion,
The width of the wide portion in the first direction is wider than the narrow portion,
The light-emitting module, wherein the narrow portion is aligned with one of the openings of the plurality of pits in the bottom surface. The method of claim 1,
In the narrow portion of the land pattern, the length in the third direction at the center in the first direction is longer than the length in the third direction of the end portion in the first direction. module. The method of claim 1,
In the narrow portion of the land pattern, the length in the third direction on the side close to the center of the light emitting device in the first direction is far from the center of the light emitting device in the first direction. A light emitting module that is longer than the length in the third direction of the side. A light-emitting module comprising a light-emitting device and a mounting substrate on which the light-emitting device is mounted,
The light emitting device,
A front extending in a first direction that is a long side and a second direction that is a short side direction, a rear surface located on the opposite side of the front side, a bottom surface adjacent to the front side, orthogonal to the front side, and a side opposite to the bottom surface A substrate including a substrate having an upper surface positioned, a first wiring disposed on the front surface, a second wiring disposed on the rear surface, and a via hole electrically connecting the first wiring and the second wiring;
At least one light emitting device electrically connected to the first wiring and mounted on the first wiring,
And a light-reflective coating member covering the side surface of the light emitting device and the front surface of the substrate,
The substrate has a plurality of pits open to the rear surface and the bottom surface and arranged in the first direction,
The plurality of pits are spaced apart from the via hole when viewed from the front,
The substrate has a third wiring covering the inner walls of the plurality of pits and electrically connected to the second wiring,
Each of the depths of the plurality of pit in the front direction from the rear surface is deeper on the bottom side than on the top side,
The mounting substrate,
A plurality of land patterns disposed at positions respectively corresponding to openings of the plurality of pits in the bottom surface of the substrate provided in the substrate of the light emitting device,
In each of the plurality of land patterns, a length in the first direction at the center in the first direction and in a third direction orthogonal to the second direction is the length of the end portion in the first direction. A light emitting module that is longer than the length in the third direction. A light-emitting module comprising a light-emitting device and a mounting substrate on which the light-emitting device is mounted,
The light emitting device,
A front extending in a first direction that is a long side and a second direction that is a short side direction, a rear surface located on the opposite side of the front side, a bottom surface adjacent to the front side, orthogonal to the front side, and a side opposite to the bottom surface A substrate including a substrate having an upper surface positioned, a first wiring disposed on the front surface, a second wiring disposed on the rear surface, and a via hole electrically connecting the first wiring and the second wiring;
At least one light emitting device electrically connected to the first wiring and mounted on the first wiring,
And a light-reflective coating member covering the side surface of the light emitting device and the front surface of the substrate,
The substrate has a plurality of pits open to the rear surface and the bottom surface and arranged in the first direction,
The plurality of pits are spaced apart from the via hole when viewed from the front,
The substrate has a third wiring covering the inner walls of the plurality of pits and electrically connected to the second wiring,
Each of the depths of the plurality of pit in the front direction from the rear surface is deeper on the bottom side than on the top side,
The mounting substrate,
A plurality of land patterns disposed at positions respectively corresponding to openings of the plurality of pits in the bottom surface of the substrate provided in the substrate of the light emitting device,
In each of the plurality of land patterns, the length in the third direction orthogonal to the first direction and the second direction on a side close to the center of the light emitting device in the first direction is the A light emitting module that is longer than a length in the third direction on a side far from the center of the light emitting device in a first direction.

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