KR20160141357A - Flexible display device and fabrication method of the same - Google Patents

Abstract

A flexible display device includes a flexible substrate and a conductive pattern. The flexible substrate includes a bending part where bending occurs. At least a part of the conductive pattern is provided on the bending part and includes a plurality of grains. The grains have a grain size of 10 nm to 100 nm. Accordingly, the present invention can reduce a crack due to the bending.

Description

[0001] FLEXIBLE DISPLAY DEVICE AND FABRICATION METHOD OF THE SAME [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flexible display device and a method of manufacturing the same, and more particularly, to a flexible display device capable of reducing the occurrence of a crack due to bending and a method of manufacturing the same.

The display device displays various images on the display screen to provide information to the user. Recently, a display device capable of bending is being developed. Unlike flat panel display devices, flexible display devices can be folded or rolled like paper. The flexible display device whose shape can be changed variously is easy to carry and can improve the convenience of the user.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a flexible display device capable of reducing the occurrence of cracks due to bending.

Another object of the present invention is to provide a method of manufacturing a flexible display device capable of reducing the occurrence of cracks due to bending.

A flexible display device according to an embodiment of the present invention includes a flexible substrate and a conductive pattern. The flexible substrate includes a bending portion. At least a portion of the conductive pattern is provided on the bending portion and has a plurality of grains. The grains have a grain size of 10 nanometers (nm) to 100 nanometers (nm).

The conductive pattern may comprise 200 to 1200 grains within a unit area of one square micrometer ([mu] m < ² >).

The conductive pattern may include at least one of a metal, an alloy of the metal, and a transparent conducting oxide.

The metal may include at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr.

The transparent conductive oxide may include at least one of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), and ITZO (indium tin zinc oxide).

The conductive pattern may include a plurality of conductive pattern layers each having a grain size of 10 nanometers (nm) to 100 nanometers (nm).

Each of the conductive pattern layers may have a thickness of 10 nanometers (nm) to 150 nanometers (nm).

Each of the conductive pattern layers may be formed of the same material.

The conductive pattern may include a first conductive pattern layer, a first air layer provided on the first conductive pattern layer, a second conductive pattern layer provided on the first air layer, a second conductive pattern layer provided on the second conductive pattern layer, An air layer, and a third conductive pattern layer provided on the second air layer.

Wherein each of the first conductive pattern layer and the third conductive pattern layer has a thickness of 10 nanometers (nm) to 150 nanometers (nm), and the second conductive pattern layer has a thickness of 5 nanometers (nm) And may have a thickness less than a meter (nm).

Wherein the conductive pattern comprises a first conductive pattern layer containing Al, a second conductive pattern layer provided on the first conductive pattern layer and including Ti, and a second conductive pattern layer provided on the second conductive pattern layer, And may include a third conductive pattern layer.

Wherein the conductive pattern comprises a first conductive pattern layer containing Al, a second conductive pattern layer provided on the first conductive pattern layer and containing Cu, and a second conductive pattern layer provided on the second conductive pattern layer, And may include a third conductive pattern layer.

Wherein the conductive pattern comprises a first conductive pattern layer containing Ti, a second conductive pattern layer provided on the first conductive pattern layer and containing Cu, and a second conductive pattern layer provided on the second conductive pattern layer, And may include a third conductive pattern layer.

Wherein the conductive pattern is electrically connected to a wiring having a grain size of 10 nanometers (nm) to 100 nanometers (nm) and a wiring having a grain size of 10 nanometers (nm) to 100 nanometers Electrode.

The wiring may include a plurality of wiring layers each having a grain size of 10 nanometers (nm) to 100 nanometers (nm).

Each of the wiring layers may have a thickness of 10 nanometers (nm) to 150 nanometers (nm).

The electrode may comprise a plurality of electrode layers each having a grain size of 10 nanometers (nm) to 100 nanometers (nm).

Each of the electrode layers may have a thickness of 10 nanometers (nm) to 150 nanometers (nm).

The flexible display device according to an embodiment of the present invention may further include an insulating layer. The wiring may include a first wiring provided between the flexible substrate and the insulating layer and a second wiring provided on the insulating layer.

The first wiring may include a plurality of first wiring layers each having a grain size of 10 nanometers (nm) to 100 nanometers (nm). The second wiring may include a plurality of second wiring layers each having a grain size of 10 nanometers (nm) to 100 nanometers (nm).

Each of the first wiring layers and the second wiring layers may have a thickness of 10 nanometers (nm) to 150 nanometers (nm).

The flexible display device according to an exemplary embodiment of the present invention may operate in a first mode or a second mode. In the first mode, at least a part of the flexible substrate and the conductive pattern is bended. In the second mode, the bending is unfolded.

The first mode may include a first bending mode in which the bending axis is bent in one direction with respect to the bending axis and a second bending mode in which the bending axis is bent in a direction opposite to the one direction with respect to the bending axis.

A flexible display device according to an embodiment of the present invention includes a flexible display panel and a touch screen panel. The flexible display panel includes a panel bending portion. The touch screen panel includes a touch bending portion and is provided on the flexible display panel. At least one of the flexible display panel and the touch screen panel includes a conductive pattern including a plurality of conductive pattern layers each having a grain size of 10 nanometers (nm) to 100 nanometers (nm) . The conductive pattern is included in at least one of a panel bending portion and a touch bending portion.

The conductive pattern may include at least one of a metal, an alloy of the metal, and a transparent conducting oxide.

Each of the conductive pattern layers may have a thickness of 10 nanometers (nm) to 150 nanometers (nm).

Wherein the flexible display panel includes a plurality of gate wirings, a plurality of data wirings electrically connected to the gate wirings, and a plurality of pixels each connected to at least one of the gate wirings and at least one of the data wirings . At least one of the gate lines and the data lines may be the conductive pattern.

The plurality of pixels include a thin film transistor including a semiconductor pattern, a source electrode electrically connected to the semiconductor pattern, and a drain electrode spaced apart from the source electrode. At least one of the semiconductor pattern, the source electrode, and the drain electrode may be the conductive pattern.

The touch screen panel includes a sensing electrode, a pad portion electrically connected to the sensing electrode, a connection wiring connected to the sensing electrode, and a fan-out wiring connecting the connection wiring and the pad portion. At least one of the sensing electrode, the pad portion, the connection wiring, and the fan-out wiring may be the conductive pattern.

The sensing electrode may have a mesh shape.

The flexible display device according to an exemplary embodiment of the present invention may operate in a first mode or a second mode. At least a portion of the conductive pattern in the first mode is bended. In the second mode, the bending is unfolded.

The first mode may include a first bending mode in which the bending axis is bent in one direction with respect to the bending axis and a second bending mode in which the bending axis is bent in a direction opposite to the one direction with respect to the bending axis.

A flexible display device according to an embodiment of the present invention includes a flexible display panel and a touch screen panel. The touch screen panel includes a touch bending portion. The touch bending portion includes a sensing electrode having a mesh shape. The sensing electrode includes the plurality of sensing electrode layers. The sensing electrode layers may be formed of the same material.

The material may be one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr.

Each of the sensing electrode layers may have a grain size of 10 nanometers (nm) to 100 nanometers (nm).

Each of the sensing electrode layers may have a thickness of 10 nanometers (nm) to 150 nanometers (nm).

The flexible display device according to an exemplary embodiment of the present invention may operate in a first mode or a second mode. At least a portion of the conductive pattern in the first mode is bended. In the second mode, the bending is unfolded.

The first mode may include a first bending mode in which the bending axis is bent in one direction with respect to the bending axis and a second bending mode in which the bending axis is bent in a direction opposite to the one direction with respect to the bending axis.

A method of manufacturing a flexible display device according to an embodiment of the present invention includes the steps of preparing a flexible substrate and providing a conductive pattern having a grain size of 10 nanometers (nm) to 100 nanometers (nm) on the flexible substrate Step < / RTI >

The step of providing the conductive pattern may be performed by sputtering at least one of a metal, an alloy of the metal, and a transparent conductive oxide.

The step of providing the conductive pattern may include forming a plurality of conductive pattern layers having a grain size of 10 nanometers (nm) to 100 nanometers (nm).

Wherein the providing of the conductive pattern comprises: sputtering at least one of a metal, an alloy of the metal, and a transparent conductive oxide to form a first conductive layer; depositing a metal directly on the first conductive layer, Forming a second conductive layer by sputtering at least one of the transparent conductive oxides; and masking and etching a part of the first conductive layer and the second conductive layer to form the conductive pattern.

According to the flexible display device according to an embodiment of the present invention, cracking due to bending can be reduced.

According to the method of manufacturing a flexible display device according to an embodiment of the present invention, it is possible to provide a method of manufacturing a flexible display device capable of reducing the occurrence of cracks due to bending.

1A, 1B and 1C are schematic perspective views of a flexible display device according to an embodiment of the present invention.
2A to 2D are schematic cross-sectional views corresponding to line I-I 'of FIG. 1B.
3A is a schematic perspective view of a flexible display device according to an embodiment of the present invention.
3B is a schematic cross-sectional view of a wiring included in a flexible display device according to an embodiment of the present invention.
3C is a schematic cross-sectional view of an electrode included in a flexible display device according to an embodiment of the present invention.
4A is a schematic perspective view of a flexible display device according to an embodiment of the present invention.
4B is a schematic cross-sectional view corresponding to line II-II 'of FIG. 4A.
4C is a schematic cross-sectional view of a first wiring included in a flexible display device according to an embodiment of the present invention.
4D is a schematic cross-sectional view of a second wiring included in a flexible display device according to an embodiment of the present invention.
5A, 5B and 5C are schematic perspective views of a flexible display device according to an embodiment of the present invention.
6A is a circuit diagram of one of pixels included in a flexible display panel according to an embodiment of the present invention.
6B is a plan view showing one of the pixels included in the flexible display panel according to the embodiment of the present invention.
FIG. 6C is a schematic cross-sectional view corresponding to line III-III 'of FIG. 6B.
7A is a schematic cross-sectional view of a flexible display device according to an embodiment of the present invention.
7B is a plan view schematically showing a touch screen panel included in a flexible display device according to an embodiment of the present invention.
8A is a schematic cross-sectional view of a flexible display device according to an embodiment of the present invention.
8B is a plan view schematically illustrating a touch screen panel included in a flexible display device according to an embodiment of the present invention.
9A is a schematic cross-sectional view of a sensing electrode included in a touch screen panel according to an embodiment of the present invention.
9B is a schematic cross-sectional view of a wiring included in a touch screen panel according to an embodiment of the present invention.
10 is a flowchart schematically showing a method of manufacturing a flexible display device according to an embodiment of the present invention.
11A and 11B are SEM photographs of Examples 1 to 4 and Comparative Examples 1 and 2.
12 is a cross-sectional photograph of Examples 3 and 4 and Comparative Examples 1 and 2.
Fig. 13 is a photograph of the inner bending and the outer bending of Comparative Examples 1 and 3, respectively, showing whether or not they are broken.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, and advantages of the present invention will become more readily apparent from the following description of preferred embodiments with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

Like reference numerals are used for like elements in describing each drawing. In the accompanying drawings, the dimensions of the structures are shown enlarged from the actual for the sake of clarity of the present invention. The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component. The singular expressions include plural expressions unless the context clearly dictates otherwise.

In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, where a portion such as a layer, film, region, plate, or the like is referred to as being "on" another portion, this includes not only the case where it is "directly on" another portion, but also the case where there is another portion in between. On the contrary, when a part such as a layer, film, region, plate or the like is referred to as being "under" another part, it includes not only the case where it is "directly underneath" another part but also another part in the middle.

Hereinafter, a flexible display device according to an embodiment of the present invention will be described.

1A, 1B and 1C are schematic perspective views of a flexible display device according to an embodiment of the present invention.

1A, 1B and 1C, a flexible display device 10 according to an embodiment of the present invention includes a flexible substrate FB and a conductive pattern CP. The conductive pattern CP may be laminated on the flexible display substrate FB in the first direction DR1. Flexible is a characteristic that can be bent, and may include a structure that is completely folded to a few nanometers. The flexible substrate FB is not particularly limited as long as it can be used normally, but may include plastic, organic polymer, and the like. Examples of the organic polymer constituting the flexible substrate FB include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide, and polyether sulfone. The flexible substrate FB can be selected in consideration of mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and waterproofness. The flexible substrate FB may be transparent.

The flexible display device 10 according to an embodiment of the present invention may operate in a first mode or a second mode. The flexible substrate FB includes a bending portion BF and a non-bending portion NBF. The bending portion BF is bent with respect to the bending axis BX extending in the second direction DR2 in the first mode and the bending is unfolded in the second mode. The bending portion NBF is connected to the non-bending portion NBF. The unbending portion NBF does not cause bending in each of the first mode and the second mode. At least a part of the conductive pattern CP is provided on the bending portion BF. Bending may mean that the flexible substrate FB or the like is bent into a specific shape by an external force.

Referring to Figs. 1A and 1C, in the first mode, at least a part of the flexible substrate FB and the conductive pattern CP is bended. Referring to FIG. 1B, the bending of the bending portion BF is unfolded in the first mode in the second mode.

The first mode includes a first bending mode and a second bending mode. Referring to FIG. 1A, a flexible display device 10 according to an embodiment of the present invention can be bent in either direction with respect to a bending axis BX in a first bending mode. The flexible display device 10 may be one that is inner bent in the first bending mode. Hereinafter, when the flexible display device 10 is bent with respect to the bending axis BX, the distance between the bending conductive patterns CP facing each other is bent so that the distance between the opposing flexible display substrates FB The shorter case is defined as inner bending. In the inner bending, one surface of the bending portion BF may have a first radius of curvature R1. The first radius of curvature R1 may be, for example, from about 1 millimeter (mm) to about 10 millimeters (mm).

Referring to FIG. 1C, the flexible display device 10 according to an embodiment of the present invention may be bent in a direction opposite to the direction bent in FIG. 1A with respect to the bending axis BX in the second bending mode. The flexible display device 10 may be outwardly bent in the second bending mode. Hereinafter, when the flexible display device 10 is bent with respect to the bending axis BX, the distance between the bending flexible printed display boards FB is bent so that the distance between the opposing conductive patterns CP The shorter case is defined as outer bending. At the time of outer bending, one surface of the bending portion BF may have a second radius of curvature R2. The second radius of curvature R2 may be equal to or different from the first radius of curvature R1. The second radius of curvature R2 may be, for example, from about 1 millimeter (mm) to about 10 millimeters (mm).

In FIGS. 1A and 1C, when the flexible display device 10 is bent with respect to the bending axis BX, the distances between the flexible display substrates FB and the flexible display substrates FB are constant, And the distance between the flexible display substrates FB that are bent and facing each other may not be constant. In FIGS. 1A and 1C, when the flexible display device 10 is bent with respect to the bending axis BX, the areas of the flexible display substrates FB that are bent and facing each other are shown as being equal to each other. However, However, the present invention is not limited to this, and the area of the flexible display substrate FB bent and facing each other may be different from each other.

2A to 2D are schematic cross-sectional views corresponding to line I-I 'of FIG. 1B.

Referring to Figs. 1A to 1C and 2A, at least a part of the conductive pattern CP is provided on the bending portion. The conductive pattern CP has a plurality of grains. A grain can be defined as a grain formed by regularly arranging component atoms and the like. The grains GR have a grain size of about 10 nanometers (nm) to about 100 nanometers (nm).

With respect to the grain size to be described below, the grain size may mean an average grain size, a maximum grain size, and the like. In addition, the grain size of each of the grains GR may be from about 10 nanometers (nm) to about 100 nanometers (nm), and the average grain size of the grains GR may be about 10 nanometers May be about 100 nanometers (nm), and representative values may be about 10 nanometers (nm) to about 100 nanometers (nm).

If the grain size of the conductive pattern CP is less than about 10 nanometers (nm), the resistance of the conductive pattern CP increases, and the power consumption for driving the flexible display device 10 can be increased. If the grain size of the conductive pattern (CP) is more than about 100 nanometers (nm), the grain size is large and it is difficult to secure the flexibility due to bending, thereby causing cracks or disconnection, resulting in reliability problems.

Generally, as the grain size of the conductive pattern CP becomes smaller, the resistance of the conductive pattern CP increases, so that the power consumption for driving the flexible display device 10 can be increased. However, flexibility is ensured, . On the contrary, if the grain size of the conductive pattern CP is increased, the resistance can be reduced, but it is difficult to secure the flexibility due to bending, so cracks or disconnection may occur.

The conductive pattern CP of the flexible display device 10 according to the embodiment of the present invention may have a grain size of about 10 nanometers (nm) to about 90 nanometers. Accordingly, the conductive pattern CP can have improved flexibility while having a resistance of a size capable of ensuring proper driving characteristics. Accordingly, the reliability of the flexible display device 10 according to the embodiment of the present invention can be improved.

The conductive pattern CP may comprise about 200 to about 1200 grains GR within a unit area of one square micrometer (mu m < ² >)."Within a unit area of one square micrometer (占 퐉 ² )" may be defined as an arbitrary region on the plane of the conductive pattern CP, for example. When the number of grains GR is less than about 200 grains GR within a unit area of 1 square micrometer (탆 ² ) on a plane, it is difficult to secure flexibility according to bending, thereby causing cracks or disconnection, resulting in reliability problems . Further, when the number of grains GR within a unit area of one square micrometer (mu m < ² >) on the plane is more than about 1200, the resistance of the conductive pattern CP increases, The power consumption can be increased.

The conductive pattern (CP) is not particularly limited as long as it is commonly used, and may include at least one of, for example, a metal, an alloy of a metal, and a transparent conducting oxide. The grains GR may be at least one of grains of a metal, grains of an alloy, and grains of a transparent conductive oxide.

The metal may be at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr, .

The transparent conductive oxide may be at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), and ITZO (indium tin zinc oxide) .

Referring to FIGS. 1A to 1C and 2A to 2C, the conductive pattern CP may include a plurality of conductive pattern layers CPL. The conductive pattern CP may comprise, for example, two, three, four, five, six conductive pattern layers (CPL). However, the present invention is not limited thereto, and the conductive pattern CP may include seven or more conductive pattern layers CPL. The grains in the different conductive pattern layers (CPL) are not connected to each other. That is, the grains are included in each of the conductive pattern layers CPL.

Each of the conductive pattern layers CPL may have a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). If the grain size of the conductive pattern layers CPL is less than about 10 nanometers (nm), the resistance of the conductive pattern layers CPL increases, and the power consumption for driving the flexible display device 10 may increase have. If the grain size of the conductive pattern layers CPL is larger than about 100 nanometers (nm), the grain size is large and it is difficult to secure the flexibility of the conductive pattern layers CPL due to bending, Thereby causing problems in reliability.

Each of the conductive pattern layers CPL may have a thickness tl of about 10 nanometers (nm) to about 150 nanometers (nm). If the thickness t1 of each of the conductive pattern layers CPL is less than about 10 nanometers (nm), the number of interfaces between the conductive pattern layers CPL increases in the conductive pattern CP of the same thickness The resistance may increase. Thus, the power consumption for driving the flexible display device 10 can be increased. In addition, reliability may be a problem in the process of manufacturing or providing each of the conductive pattern layers CPL. If the thickness t1 of each of the conductive pattern layers CPL is about 150 nanometers (nm), it is difficult to secure the flexibility of the conductive pattern layers CPL due to bending, thereby causing cracks or breaks, A problem may arise.

Each of the conductive pattern layers CPL is not particularly limited as long as it is commonly used, and may include at least one of, for example, a metal, an alloy of a metal, and a transparent conducting oxide.

The metal may be at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr, .

The transparent conductive oxide may be at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), and ITZO (indium tin zinc oxide) .

Each of the conductive pattern layers CPL may be made of the same material. For example, each of the conductive pattern layers CPL may be made of Al. However, the present invention is not limited thereto, and each of the conductive pattern layers CPL may be made of Cu, ITO, or the like.

Each of the conductive pattern layers CPL may be formed of a material different from each other. For example, when the conductive pattern CP has two conductive pattern layers CPL, one conductive pattern layer may be made of Al, and the other conductive pattern layer may be made of Cu. When the conductive pattern CP has four conductive pattern layers CPL, the conductive pattern CP sequentially includes a conductive pattern layer made of Al, a conductive pattern layer made of Cu, a conductive pattern layer made of Al, Cu may be formed by stacking a conductive pattern layer made of Cu. When the conductive pattern CP has four conductive pattern layers CPL, the conductive pattern CP sequentially includes a conductive pattern layer made of Al, a conductive pattern layer made of Ag, a conductive pattern layer made of Al, Ag may be formed by stacking conductive pattern layers.

Referring to FIG. 2C, the conductive pattern CP may include a first conductive pattern CPL1, a second conductive pattern CPL2, and a third conductive pattern CPL3. The second conductive pattern layer CPL2 is provided on the first conductive pattern layer CPL1. The third conductive pattern layer CPL3 is provided on the second conductive pattern layer CPL2.

The first conductive pattern layer CPL1, the second conductive pattern layer CPL2, and the third conductive pattern layer CPL3 may be formed of the same material. For example, each of the conductive pattern layers CPL may be made of Al. However, the present invention is not limited thereto, and each of the conductive pattern layers CPL may be made of Cu. The thicknesses of the first conductive pattern layer CPL1, the second conductive pattern layer CPL2 and the third conductive pattern layer CPL3 may be equal to each other, and the thicknesses of the first conductive pattern layer CPL1, At least one of the thicknesses of the third conductive pattern layer CPL2 and the third conductive pattern layer CPL3 may be different from the thickness of the other conductive pattern layers.

For example, the conductive pattern CP may be formed on the first conductive pattern layer CPL1 including Al and the second conductive pattern layer CPL2 provided on the first conductive pattern layer CPL1, 2 conductive pattern layer CPL2 provided on the second conductive pattern layer CPL2. The thicknesses of the first conductive pattern layer CPL1, the second conductive pattern layer CPL2 and the third conductive pattern layer CPL3 may be, for example, 100 nanometers (nm), 100 nanometers (nm) For example, the conductive pattern CP may be provided on the first conductive pattern layer CPL1 including Ti and the first conductive pattern layer CPL1, And a third conductive pattern layer CPL3 provided on the second conductive pattern layer CPL2 and the second conductive pattern layer CPL2 and containing Al. The thicknesses of the first conductive pattern layer CPL1, the second conductive pattern layer CPL2 and the third conductive pattern layer CPL3 may be, for example, 200 nanometers (nm), 150 nanometers (nm) , And 150 nanometers (nm).

Referring to FIG. 2D, the conductive pattern CP includes a first conductive pattern CPL1, a first air layer AIL1, a second conductive pattern CPL2, a second air layer AIL2, and a third conductive pattern layer CPL3).

The first air layer AIL1 is provided on the first conductive pattern layer CPL1. The second conductive pattern layer CPL2 is provided on the first air layer AIL1. The second air layer AIL2 is provided on the second conductive pattern layer CPL2. The third conductive pattern layer CPL3 is provided on the second air layer AIL2.

Each of the first conductive pattern layer CPL1 and the third conductive pattern layer CPL3 has a thickness of 10 nanometers or more and 150 nanometers or less and the second conductive pattern layer CPL2 has a thickness of 5 nanometers (nm) and less than 10 nanometers (nm).

In the first conductive pattern layer CPL1, a region adjacent to the first air layer AIL1 may be oxidized. In the second conductive pattern layer CPL2, the region adjacent to the first air layer AIL1 and the region adjacent to the second air layer AIL2 may be oxidized. In the third conductive pattern layer CPL3, the region adjacent to the second air layer AIL2 can be oxidized.

For example, the conductive pattern CP is provided on the first conductive pattern layer CPL1 including Al, the first conductive pattern layer CPL1, the second conductive pattern layer CPL2 including Ti, 2 conductive pattern layer CPL2 provided on the second conductive pattern layer CPL2. The thickness of each of the first conductive pattern layer CPL1, the second conductive pattern layer CPL2 and the third conductive pattern layer CPL3 may be, for example, 150 nanometers (nm), 5 nanometers (nm) , And 150 nanometers (nm).

In the first conductive pattern layer CPL1, a region adjacent to the first air layer AIL1 may be oxidized and exist in the form of aluminum oxide. In the second conductive pattern layer CPL2, a region adjacent to the first air layer AIL1 And the region adjacent to the second air layer AIL2 may be oxidized and exist in the form of titanium oxide. In the third conductive pattern layer CPL3, the region adjacent to the second air layer AIL2 is oxidized to form aluminum oxide And the like.

3A is a schematic perspective view of a flexible display device according to an embodiment of the present invention. 3B is a schematic cross-sectional view of a wiring included in a flexible display device according to an embodiment of the present invention. 3C is a schematic cross-sectional view of an electrode included in a flexible display device according to an embodiment of the present invention.

Referring to Figs. 1A to 1C and 3A, the conductive pattern CP may include a wiring WI and an electrode EL. The wiring WI can be included, for example, in a touch screen panel (TSP in Fig. 5A), a flexible display panel (DP in Fig. 5A), and the like.

The wiring WI may be provided on the flexible substrate FB. At least a part of the wiring WI may be provided on the bending portion BF. For example, the wiring WI may be provided on the bending portion BF and not on the non-bending portion NBF. For example, the wiring WI may be provided on the bending portion BF and the non-bending portion NBF.

The wiring WI may have a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). If the grain size of the wiring WI is less than about 10 nanometers (nm), the resistance of the wiring WI increases, and the power consumption for driving the flexible display device 10 may increase. If the grain size of the wiring WI is larger than about 100 nanometers (nm), the grain size is large and it is difficult to ensure the flexibility of the wiring WI due to bending, thereby causing cracks or disconnection, .

Referring to FIGS. 1A to 1C, 3A and 3B, the wiring WI may include a plurality of wiring layers WIL. The wiring WI may include, for example, two, three, four, five, and six wiring layers WIL. However, the present invention is not limited to this, and the wiring WI may include seven or more wiring layers WIL. The grains in the different wiring layers (WIL) are not connected to each other. That is, the grains are included in each of the wiring layers WIL.

Each of the wiring layers WIL may have a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). If the grain size of the wiring layers WIL is less than about 10 nanometers (nm), the resistance of the wiring layers WIL increases, and the power consumption for driving the flexible display device 10 may increase. If the grain size of the wiring layers WIL is larger than about 100 nanometers (nm), the grain size is large and it is difficult to secure the flexibility of the wiring layers WIL due to bending, thereby causing cracks or disconnection, .

Each of the wiring layers WIL may have a thickness of about 10 nanometers (nm) to about 150 nanometers (nm). If the thickness of each of the wiring layers WIL is less than about 10 nanometers (nm), the number of interfaces between the wiring layers WIL in the wiring WI of the same thickness increases and the resistance may increase. Thus, the power consumption for driving the flexible display device 10 can be increased. Also, reliability may be a problem in the process of manufacturing or providing each of the wiring layers WIL. If the thickness of each of the wiring layers WIL is greater than about 150 nanometers (nm), it is difficult to secure the flexibility of the wiring layers WIL due to bending, thereby causing cracks or disconnection, which may cause reliability problems.

Each of the wiring layers WIL is not particularly limited as long as it is commonly used, and may include at least one of, for example, a metal, an alloy of a metal, and a transparent conducting oxide.

The metal may be at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr, .

The transparent conductive oxide may be at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), and ITZO (indium tin zinc oxide) .

Referring to Figs. 1A to 1C, 3A and 3C, an electrode EL may be provided on a flexible substrate FB. At least a portion of the electrode EL may be provided on the bending portion BF. For example, the electrode EL is provided on the bending portion BF and may not be provided on the non-bending portion NBF. For example, the electrode EL may be provided on the bending portion BF and the non-bending portion NBF.

The electrode EL is electrically connected to the wiring WI. The electrode EL may be spaced apart from the wiring WI. However, the present invention is not limited to this, and the electrode EL may be formed integrally with the wiring WI.

The electrode EL and the wiring WI may be provided on the same layer. However, the present invention is not limited thereto, and the electrode EL and the wiring WI may be provided on different layers from each other. Although not shown, for example, an intermediate layer may be provided between the wiring WI and the electrode EL.

The electrode EL may have a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). If the grain size of the electrode EL is less than about 10 nanometers (nm), the resistance of the electrode EL increases, and the power consumption for driving the flexible display device 10 may increase. If the grain size of the electrode EL is more than about 100 nanometers (nm), the grain size is large and it is difficult to secure the flexibility of the electrode EL due to bending, thereby causing cracks or breaks, .

The electrode EL may include a plurality of electrode layers ELL. The electrode EL may comprise, for example, two, three, four, five, and six electrode layers (ELL). However, the present invention is not limited thereto, and the electrode EL may include seven or more electrode layers ELL. In the different electrode layers (ELL), the grains are not connected to each other. That is, the grains are contained in each of the electrode layers ELL.

Each of the electrode layers ELL may have a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). If the grain size of the electrode layers ELL is less than about 10 nanometers (nm), the resistance of the electrode layers ELL increases, and the power consumption for driving the flexible display device 10 may increase. When the grain size of the electrode layers ELL is more than about 100 nanometers (nm), the grain size is large and it is difficult to ensure the flexibility of the electrode layers ELL due to bending. As a result, cracks or breaks occur, .

Each of the electrode layers ELL may have a thickness of about 10 nanometers (nm) to about 150 nanometers (nm). If the thickness of each of the electrode layers ELL is less than about 10 nanometers (nm), the number of interfaces between the electrode layers ELL in the electrode EL of the same thickness increases, and the resistance may increase. Thus, the power consumption for driving the flexible display device 10 can be increased. In addition, reliability may be a problem in the process of manufacturing or providing each of the electrode layers ELL. If the thickness of each of the electrode layers ELL is more than about 150 nanometers (nm), it is difficult to secure the flexibility of the electrode layers ELL due to bending, thereby causing cracks or disconnection, which may cause reliability problems.

Each of the electrode layers ELL is not particularly limited as long as it is commonly used, and may include at least one of, for example, a metal, an alloy of a metal, and a transparent conducting oxide.

The metal may be at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr, .

The transparent conductive oxide may be at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), and ITZO (indium tin zinc oxide) .

4A is a schematic perspective view of a flexible display device according to an embodiment of the present invention. 4B is a schematic cross-sectional view corresponding to line II-II 'of FIG. 4A. 4C is a schematic cross-sectional view of a first wiring included in a flexible display device according to an embodiment of the present invention. 4D is a schematic cross-sectional view of a second wiring included in a flexible display device according to an embodiment of the present invention.

Referring to FIGS. 1A to 1C and FIGS. 4A and 4B, the wiring WI may include a first wiring WI1 and a second wiring WI2. An insulating layer IL may be provided between the first wiring WI1 and the second wiring WI2. The first wiring WI1 may be provided between the flexible substrate and the insulating layer IL and the second wiring WI2 may be provided on the insulating layer IL. The insulating layer IL is not particularly limited as long as it is generally used, but may be formed of an organic insulating material or an inorganic insulating material.

Referring to FIG. 4C, the first wiring WI1 may include a plurality of first wiring layers WIL1. The first wiring WI1 may include, for example, two, three, four, five, and six first wiring layers WIL1. However, the present invention is not limited thereto, and the first wiring WI1 may include seven or more first wiring layers WIL1. Referring to FIG. 4D, the second wiring WI2 may include a plurality of second wiring layers WIL2. The second wiring WI2 may include, for example, two, three, four, five, and six second wiring layers WIL2. However, the present invention is not limited thereto, and the second wiring WI2 may include seven or more second wiring layers WIL2.

1A to 1C and 4A to 4D, each of the first wiring layers WIL1 and the second wiring layers WIL2 has a grain size of about 10 nanometers (nm) to about 100 nanometers (nm) Lt; / RTI > If the grain sizes of the first wiring layers WIL1 and the second wiring layers WIL2 are less than about 10 nanometers (nm), the resistance of the first wiring layers WIL1 and the second wiring layers WIL2 increases, The power consumption for driving the flexible display device 10 can be increased. If the grain size of the first wiring layers WIL1 and the second wiring layers WIL2 exceeds about 100 nanometers (nm), the grain size is large and the first wiring layers WIL1 and the second wiring layers WIL1 It is difficult to secure the flexibility of the WIL2, and thus cracks or disconnection may occur, which may cause reliability problems.

Each of the first wiring layers WIL1 and WIL2 may have a thickness of about 10 nanometers (nm) to about 150 nanometers (nm). When the thicknesses of the first wiring layers WIL1 and the second wiring layers WIL2 are less than about 10 nanometers (nm), in the first wiring WI1 of the same thickness, The number of interfaces and the number of interfaces between the second wiring layers WIL2 in the second wirings WI2 having the same thickness are respectively increased and the resistance can be increased. Thus, the power consumption for driving the flexible display device 10 can be increased. Also, reliability may be a problem in the process of manufacturing or providing each of the first wiring layers WIL1 and the second wiring layers WIL2. If the thicknesses of the first wiring layers WIL1 and the second wiring layers WIL2 are greater than about 150 nanometers (nm), the flexibility of the first wiring layers WIL1 and the second wiring layers WIL2 due to bending It is difficult to ensure securing it, and thus cracks or disconnection may occur, which may cause reliability problems.

Each of the first wiring layers WIL1 and the second wiring layers WIL2 is not particularly limited as long as it is commonly used. For example, the first wiring layers WIL1 and the second wiring layers WIL2 may include at least one of a metal, a metal alloy, and a transparent conducting oxide can do.

The metal may be at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr, .

The transparent conductive oxide may be at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), and ITZO (indium tin zinc oxide) .

5A, 5B and 5C are schematic perspective views of a flexible display device according to an embodiment of the present invention.

Referring to FIGS. 5A to 5C, as described above, the flexible display device 10 according to an exemplary embodiment of the present invention may operate in a first mode or a second mode. The flexible display device 10 according to an embodiment of the present invention includes a touch screen panel TSP and a flexible display panel DP. The touch screen panel TSP may be stacked in the first direction DR1 on the flexible display panel DP.

The touch screen panel TSP includes a touch bending portion BF2 and a touch non-bending portion NBF2. The touch bending part BF2 bends on the bending axis BX1 extending in the second direction DR2 in the first mode and bends in the second mode. The touch bending portion BF2 is connected to the touch non-bending portion NBF2. The touch non-bending portion NBF2 does not cause bending in each of the first mode and the second mode.

The flexible display panel DP includes a panel bending portion BF1 and a panel non-bending portion NBF1. The panel bending portion BF1 bends with respect to the bending axis BX1 extending in the second direction DR2 in the first mode and bends in the second mode. The panel bending portion BF1 is connected to the panel non-bending portion NBF1. The panel non-bending portion NBF1 does not cause bending in each of the first mode and the second mode.

Referring to FIGS. 5A and 5C, at least a part of the touch screen panel TSP and the flexible display panel DP is bended in the first mode. Referring to FIG. 5B, bending of the touch bending portion BF2 of the touch screen panel TSP and the panel bending portion BF1 of the flexible display panel DP is unfolded in the first mode in the second mode.

The first mode includes a first bending mode and a second bending mode. Referring to FIG. 5A, the flexible display device 10 according to an embodiment of the present invention can be bent in either direction with respect to the bending axis BX1 in the first bending mode. The flexible display device 10 may be one that is inner bent in the first bending mode. When the flexible display device 10 is bent inward, the distance between the bent and touched touch screen panels TSP is bent to be shorter than the distance between the flexible display panels DP facing each other. During inner bending, one surface of the touch bending portion BF2 of the touch screen panel TSP may have a third radius of curvature R3. The third radius of curvature R3 may be, for example, from about 1 nanometer (nm) to about 10 nanometers (nm).

Referring to FIG. 5C, the flexible display device 10 according to an embodiment of the present invention may be bent in a direction opposite to the direction bent in FIG. 5A with respect to the bending axis BX1 in the second bending mode. The flexible display device 10 may be outwardly bent in the second bending mode. When the flexible display device 10 is bent outward, the distance between the flexible display panels DP bended and facing each other is smaller than the distance between the opposing touch screen panels TSP when the flexible display device 10 is bent. At the time of outer bending, one surface of the panel bending portion BF1 of the flexible display panel DP may have a fourth radius of curvature R4. The fourth radius of curvature R4 may be, for example, from about 1 nanometer (nm) to about 10 nanometers (nm).

At least one of the flexible display panel DP and the touch screen panel TSP has a grain size of 10 nanometers (nm) to 100 nanometers (nm) (see FIG. 1A through FIG. 1C and FIGS. 5A through 5C) grain size of the conductive pattern CP. The conductive pattern CP may be included in at least one of the panel bending portion BF1 and the touch bending portion BF2. The conductive pattern CP may include a plurality of conductive pattern layers (CPL of FIG. 2B) having a grain size of 10 nanometers (nm) to 100 nanometers (nm).

6A is a circuit diagram of one of pixels included in a flexible display panel according to an embodiment of the present invention. 6B is a plan view showing one of the pixels included in the flexible display panel according to the embodiment of the present invention. FIG. 6C is a schematic cross-sectional view corresponding to line III-III 'of FIG. 6B.

Hereinafter, the flexible display panel DP is an organic light-emitting display panel, but the present invention is not limited thereto. The flexible display panel may be a liquid crystal display panel, a plasma display panel, An electrophoretic display panel, a microelectromechanical system display panel, and an electrowetting display panel.

Referring to Figs. 1A to 1C, 5A to 5C, and 6A and 6B, the flexible display panel DP includes a flexible substrate FB and a conductive pattern CP provided on the flexible substrate FB can do. At least a part of the conductive pattern CP may be included in the panel bending portion BF1. The conductive pattern CP may be included in the panel bending portion BF1 and not included in the panel non-bending portion NBF1. The conductive pattern CP may be included in each of the panel bending portion BF1 and the panel non-bending portion NBF1. The conductive pattern CP may have a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). The conductive pattern CP may comprise a plurality of conductive pattern layers (CPL of FIG. 2B) having a grain size of about 10 nanometers (nm) to about 100 nanometers (nm).

The conductive pattern CP is electrically connected to the gate lines GL, the data lines DL, the driving voltage lines DVL, the switching thin film transistor TFT1, the driving thin film transistor TFT2, the capacitor Cst, 1 semiconductor pattern SM1, a second semiconductor pattern SM2, a first electrode EL1, and a second electrode EL2. The switching thin film transistor TFT1 may include a first gate electrode GE1, a first source electrode SE1, and a first drain electrode DE1. The driving thin film transistor TFT2 may include a second gate electrode GE2, a second source electrode SE2 and a second drain electrode DE2. The capacitor Cst may include a first common electrode CE1 and a second common electrode CE2.

Referring to FIGS. 6A and 6B, each of the pixels PX may be connected to a wiring portion composed of gate lines GL, data lines DL, and driving voltage lines DVL. Each of the pixels PX includes thin film transistors TFT1 and TFT2 connected to a wiring portion, an organic light emitting element OEL connected to the thin film transistors TFT1 and TFT2, and a capacitor Cst.

In an embodiment of the present invention, one pixel is connected to one gate line, one data line, and one driving voltage line. However, the present invention is not limited to this, One gate line, one data line, and one drive voltage line. Further, one pixel may be connected to at least one gate line, at least one gate line, and at least one drive voltage line.

The gate wirings GL extend in the third direction DR3. The data lines DL extend in a fourth direction DR4 intersecting the gate lines GL. The driving voltage lines DVL extend in substantially the same direction as the data lines DL, i.e., in the fourth direction DR4. The gate wirings GL transfer scan signals to the thin film transistors TFT1 and TFT2 and the data wirings DL transfer data signals to the thin film transistors TFT1 and TFT2 while the drive voltage wirings DVL Thereby providing a driving voltage to the thin film transistors TFT1 and TFT2.

At least one of the gate wirings GL, the data lines DL and the driving voltage wirings DVL may have a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). At least one of the gate lines GL, the data lines DL and the driving voltage lines DVL includes a plurality of layers having a grain size of about 10 nanometers (nm) to about 100 nanometers (nm) can do. Each of the plurality of layers included in at least one of the gate wirings GL, the data wirings DL and the driving voltage wirings DVL has a thickness of about 10 nanometers (nm) to about 150 nanometers (nm) .

Each of the pixels PX can emit light of a specific color, for example, either red light, green light, or blue light. The type of color light is not limited to those described above, and for example, white light, cyan light, magenta light, yellow light, and the like may be added.

The thin film transistors TFT1 and TFT2 may include a driving thin film transistor TFT2 for controlling the organic light emitting element OEL and a switching thin film transistor TFT1 for switching the driving thin film transistor TFT2. In an embodiment of the present invention, each of the pixels PX includes two thin film transistors TFT1 and TFT2. However, the present invention is not limited thereto, and each of the pixels PX may include one thin film transistor and a capacitor Or each of the pixels PX may include three or more thin film transistors and two or more capacitors.

At least one of the switching thin film transistor TFT1, the driving thin film transistor TFT2 and the capacitor Cst may have a grain size of 10 nanometers (nm) to about 100 nanometers (nm). At least one of the switching thin film transistor TFT1, the driving thin film transistor TFT2 and the capacitor Cst may comprise a plurality of layers having a grain size of about 10 nanometers (nm) to about 100 nanometers (nm) . Each of the plurality of layers included in at least one of the switching thin film transistor TFT1, the driving thin film transistor TFT2 and the capacitor Cst may have a thickness of about 10 nanometers (nm) to about 150 nanometers (nm) have.

The switching thin film transistor TFT1 includes a first gate electrode GE1, a first source electrode SE1, and a first drain electrode DE1. The first gate electrode GE1 is connected to the gate lines GL and the first source electrode SE1 is connected to the data lines DL. The first drain electrode DE1 is connected to the first common electrode CE1 by a fifth contact hole CH5. The switching thin film transistor TFT1 transfers a data signal applied to the data lines DL to the driving thin film transistor TFT2 according to a scanning signal applied to the gate lines GL.

At least one of the first gate electrode GE1, the first source electrode SE1 and the first drain electrode DE1 may have a grain size of 10 nanometers (nm) to about 100 nanometers (nm). At least one of the first gate electrode GE1, the first source electrode SE1 and the first drain electrode DE1 is formed of a plurality of layers having a grain size of about 10 nanometers (nm) to about 100 nanometers (nm) Lt; / RTI > Each of the plurality of layers included in at least one of the first gate electrode GE1, the first source electrode SE1 and the first drain electrode DE1 has a thickness of about 10 nanometers (nm) to about 150 nanometers (nm) Thickness.

The driving thin film transistor TFT2 includes a second gate electrode GE2, a second source electrode SE2 and a second drain electrode DE2. The second gate electrode GE2 is connected to the first common electrode CE1. And the second source electrode SE2 is connected to the driving voltage lines DVL. The second drain electrode DE2 is connected to the first electrode EL1 by the third contact hole CH3.

At least one of the second gate electrode GE2, the second source electrode SE2 and the second drain electrode DE2 may have a grain size of 10 nanometers (nm) to about 100 nanometers (nm). At least one of the second gate electrode GE2, the second source electrode SE2 and the second drain electrode DE2 is formed of a plurality of layers having a grain size of about 10 nanometers (nm) to about 100 nanometers (nm) Lt; / RTI > Each of the plurality of layers included in at least one of the second gate electrode GE2, the second source electrode SE2 and the second drain electrode DE2 has a thickness of about 10 nanometers (nm) to about 150 nanometers (nm) Thickness.

The first electrode EL1 is connected to the second drain electrode DE2 of the driving thin film transistor TFT2. A common voltage is applied to the second electrode EL2, and the light emitting layer (EML) emits blue light in accordance with the output signal of the driving thin film transistor TFT2 to display an image. The first electrode EL1 and the second electrode EL2 will be described later in more detail.

The capacitor Cst is connected between the second gate electrode GE2 and the second source electrode SE2 of the driving thin film transistor TFT2 and is connected to the data input to the second gate electrode GE2 of the driving thin film transistor TFT2 Charge and hold the signal. The capacitor Cst includes a first common electrode CE1 connected to the first drain electrode DE1 and the sixth contact hole CH6 and a second common electrode CE2 connected to the driving voltage lines DVL .

At least one of the first common electrode CE1 and the second common electrode CE2 may have a grain size of 10 nanometers (nm) to about 100 nanometers (nm). At least one of the first common electrode CE1 and the second common electrode CE2 may comprise a plurality of layers having a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). Each of the plurality of layers included in at least one of the first common electrode CE1 and the second common electrode CE2 may have a thickness of about 10 nanometers (nm) to about 150 nanometers (nm).

Referring to FIGS. 6A to 6C, the first flexible substrate FB1 is not particularly limited as long as it can be used normally. For example, the first flexible substrate FB1 may include plastic, organic polymer, and the like. Examples of the organic polymer constituting the first flexible substrate FB1 include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide, polyether sulfone, and the like. The first flexible board FB1 can be selected in consideration of mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and waterproofness. The first flexible substrate FB1 may be transparent.

A substrate buffer layer (not shown) may be provided on the first flexible substrate FB1. The substrate buffer layer (not shown) prevents impurities from diffusing into the switching thin film transistor TFT1 and the driving thin film transistor TFT2. The substrate buffer layer (not shown) may be formed of silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiOxNy) or the like and may be omitted depending on the material and process conditions of the first flexible substrate FB1.

On the first flexible substrate FB1, a first semiconductor pattern SM1 and a second semiconductor pattern SM2 are provided. The first semiconductor pattern SM1 and the second semiconductor pattern SM2 are formed of a semiconductor material and operate as active layers of the switching thin film transistor TFT1 and the driving thin film transistor TFT2, respectively. The first semiconductor pattern SM1 and the second semiconductor pattern SM2 each include a source portion SA and a drain portion DA and a channel portion CA provided between the source portion SA and the drain portion DA do. The first semiconductor pattern SM1 and the second semiconductor pattern SM2 may be formed of an inorganic semiconductor or an organic semiconductor, respectively. The source portion SA and the drain portion DA may be doped with an n-type impurity or a p-type impurity.

At least one of the first semiconductor pattern SM1 and the second semiconductor pattern SM2 may have a grain size of 10 nanometers (nm) to about 100 nanometers (nm). At least one of the first semiconductor pattern SM1 and the second semiconductor pattern SM2 may comprise a plurality of layers having a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). Each of the plurality of layers included in at least one of the first semiconductor pattern SM1 and the second semiconductor pattern SM2 may have a thickness of about 10 nanometers (nm) to about 150 nanometers (nm).

A gate insulating layer GI is provided on the first semiconductor pattern SM1 and the second semiconductor pattern SM2. The gate insulating layer GI covers the first semiconductor pattern SM1 and the second semiconductor pattern SM2. The gate insulating layer (GI) may be formed of an organic insulating material or an inorganic insulating material.

A first gate electrode GE1 and a second gate electrode GE2 are provided on the gate insulating layer GI. The first gate electrode GE1 and the second gate electrode GE2 are formed so as to cover the regions corresponding to the first semiconductor pattern SM1 and the drain portion DA of the second semiconductor pattern SM2, respectively.

A first insulating layer IL1 is provided on the first gate electrode GE1 and the second gate electrode GE2. The first insulating layer IL1 covers the first gate electrode GE1 and the second gate electrode GE2. The first insulating layer IL1 may be formed of an organic insulating material or an inorganic insulating material.

A first source electrode SE1 and a first drain electrode DE1, a second source electrode SE2 and a second drain electrode DE2 are provided on the first insulating layer IL1. The second drain electrode DE2 is in contact with the drain portion DA of the second semiconductor pattern SM2 by the gate insulating layer GI and the first contact hole CH1 formed in the first insulating layer IL1, The second source electrode SE2 is in contact with the source portion SA of the second semiconductor pattern SM2 by the gate insulating layer GI and the second contact hole CH2 formed in the first insulating layer IL1. The first source electrode SE1 is in contact with the source portion (not shown) of the first semiconductor pattern SM1 by the gate insulating layer GI and the fourth contact hole CH4 formed in the first insulating layer IL1 The first drain electrode DE1 contacts the drain portion (not shown) of the first semiconductor pattern SM1 by the gate insulating layer GI and the fifth contact hole CH5 formed in the first insulating layer IL1. do.

A passivation layer PL is provided on the first source electrode SE1 and the first drain electrode DE1, the second source electrode SE2 and the second drain electrode DE2. The passivation layer PL may serve as a protective film for protecting the switching thin film transistor TFT1 and the driving thin film transistor TFT2 or may serve as a flattening film for flattening the upper surface thereof.

A first electrode EL1 is provided on the passivation layer PL. The first electrode EL1 may be, for example, a cathode. The first electrode EL1 is connected to the second drain electrode DE2 of the driving TFT TR2 through the third contact hole CH3 formed in the passivation layer PL.

On the passivation layer PL, a pixel defining layer (PDL) for partitioning the light emitting layer (EML) is provided so as to correspond to each of the pixels PX. The pixel defining layer PDL exposes the upper surface of the first electrode EL1 and protrudes from the first flexible substrate FB1. The pixel defining layer (PDL) may include, but is not limited to, a metal-fluorine ion compound. For example, the pixel defining layer (PDL) is any one metal of LiF, BaF _2, CsF, and - may be of a fluoride compound. The metal-fluorine ion compound has an insulating property when it has a predetermined thickness. The thickness of the pixel defining layer (PDL) may be, for example, 10 nm to 100 nm. The pixel defining layer (PDL) will be described in more detail later.

An organic light emitting element OEL is provided in a region surrounded by the pixel defining layer PDL. The organic light emitting diode OEL includes a first electrode EL1, a hole transporting region HTR, a light emitting layer EML, an electron transporting region ETR and a second electrode EL2.

The first electrode EL1 has conductivity. The first electrode EL1 may be a pixel electrode or an anode. The first electrode EL1 may have a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). The first electrode EL1 may comprise a plurality of layers having a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). Each of the plurality of layers included in the first electrode EL1 may have a thickness of about 10 nanometers (nm) to about 150 nanometers (nm).

The first electrode EL1 may be a transmissive electrode, a transflective electrode, or a reflective electrode. When the first electrode EL1 is a transmissive electrode, the first electrode EL1 is formed of a transparent metal oxide such as ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO tin zinc oxide, and the like. When the first electrode EL1 is a transflective electrode or a reflective electrode, the first electrode EL1 is formed of one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, And may include at least one.

An organic layer may be disposed on the first electrode EL1. The organic layer includes a light emitting layer (EML). The organic layer may further include a hole transporting region (HTR) and an electron transporting region (ETR).

The hole transporting region HTR is provided on the first electrode EL1. The hole transporting region HTR may include at least one of a hole injecting layer, a hole transporting layer, a buffer layer, and an electron blocking layer.

The hole transporting region (HTR) may have a single layer of a single material, a single layer of a plurality of different materials, or a multi-layer structure having a plurality of layers of a plurality of different materials.

For example, the hole transporting region (HTR) may have a structure of a single layer made of a plurality of different materials, or may have a structure of a single hole transporting layer / hole transporting layer, a hole injecting layer / / Buffer layer, a hole injection layer / a buffer layer, a hole transporting layer / a buffer layer, a hole injecting layer / a hole transporting layer / an electron blocking layer.

The hole transporting region HTR can be formed by a variety of methods such as vacuum deposition, spin coating, casting, Langmuir-Blodgett, inkjet printing, laser printing, and laser induced thermal imaging .

When the hole transporting region HTR includes a hole injecting layer, the hole transporting region HTR may include a phthalocyanine compound such as copper phthalocyanine; (N, N'-diphenyl-N, N'-bis- [4- (phenyl-m-tolyl-amino) -phenyl] -biphenyl-4,4'-diamine, m- , 4 "-tris (3-methylphenylphenylamino) triphenylamine), TDATA (4,4'4" -Tris (N, N-diphenylamino) triphenylamine), 2TNATA (naphthyl) -N-phenylamino} -triphenylamine, PEDOT / PSS, poly (4-styrenesulfonate), PANI / DBSA (polyaniline / dodecylbenzenesulfonic acid), PANI / CSA ), PANI / PSS ((Polyaniline) / Poly (4-styrenesulfonate), and the like.

When the hole transporting region HTR includes a hole transporting layer, the hole transporting region HTR includes a carbazole-based derivative such as N-phenylcarbazole and polyvinylcarbazole, a fluorine-based derivative, TPD (N, N -bis (3-methylphenyl) -N, N'-diphenyl- [1,1-biphenyl] -4,4'- diamine), TCTA (4,4 ', 4 "-tris (N-carbazolyl) triphenylamine) N, N'-diphenylbenzidine), TAPC (4,4'-Cyclohexylidene bis [N, N-bis (4-methylphenyl) benzenamine]), and the like, but the present invention is not limited thereto.

In addition to the above-mentioned materials, the hole transporting region (HTR) may further include a charge generating material for improving conductivity. The charge generating material may be uniformly or non-uniformly dispersed in the hole transporting region (HTR). The charge generating material may be, for example, a p-dopant. The p-dopant may be, but is not limited to, one of quinone derivatives, metal oxides, and cyano group-containing compounds. For example, non-limiting examples of the p-dopant include quinone derivatives such as TCNQ (tetracyanoquinodimethane) and F4-TCNQ (2,3,4,6-tetrafluoro-tetracyanoquinodimethane), metal oxides such as tungsten oxide and molybdenum oxide But the present invention is not limited thereto.

The light emitting layer (EML) is provided on the hole transporting region (HTR). The light emitting layer (EML) may have a single layer made of a single material, a single layer made of a plurality of different materials, or a multi-layered structure having a plurality of layers made of a plurality of different materials.

The light emitting layer (EML) is not particularly limited as long as it is a commonly used material. For example, the light emitting layer (EML) may be made of a material emitting red, green and blue light and may include a fluorescent material or a phosphorescent material. Further, the light emitting layer (EML) may include a host and a dopant.

For example, Alq3 (tris (8-hydroxyquinolino) aluminum), CBP (4,4'-bis (N-carbazolyl) -1,1'-biphenyl) PVK (n-vinylcabazole), ADN (naphthalene-2-yl) anthracene, TCTA (4,4 ', 4' '- Tris (carbazol- (3-tert-butyl-9,10-di (naphth-2-yl) anthracene), DSA (distyrylarylene), CDBP Bis (9-carbazolyl) -2,2'-dimethyl-biphenyl, MADN (2-Methyl-9,10-bis (naphthalen-2-yl) anthracene).

When the light emitting layer (EML) emits red light, the light emitting layer (EML) may include a fluorescent substance containing PBD: Eu (DBM) 3 (Phen) (tris (dibenzoylmethanato) phenanthoroline europium) or perylene . When the light emitting layer EML emits red light, the dopant included in the light emitting layer EML is, for example, PIQIr (acac) bis (1-phenylisoquinoline) acetylacetonate iridium, PQIr acac bis (1-phenylquinoline) metal complexes such as acetylacetonate iridium, PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) or organometallic complexes.

When the light emitting layer (EML) emits green light, the light emitting layer (EML) may include a fluorescent material including, for example, Alq3 (tris (8-hydroxyquinolino) aluminum). When the light emitting layer (EML) emits green light, the dopant contained in the light emitting layer (EML) may be a metal complex such as Ir (ppy) 3 (fac-tris (2-phenylpyridine) iridium) It can be selected from organometallic complexes.

When the light-emitting layer (EML) emits blue light, the light-emitting layer (EML) may include, for example, spiro-DPVBi, spiro-6P, distyryl-benzene, distyryl- ), A PFO (polyfluorene) -based polymer, and a poly (p-phenylene vinylene) -based polymer. When the light emitting layer (EML) emits blue light, (EML) can be selected from a metal complex or an organometallic complex such as, for example, (4,6-F2ppy) 2Irpic. More specifically, for the light emitting layer (EML) Will be described later.

An electron transporting region (ETR) is provided on the light-emitting layer (EML). The electron transporting region may include at least one of a hole blocking layer, an electron transporting layer and an electron injecting layer, but is not limited thereto.

When the electron transporting region comprises an electron transporting layer, the electron transporting region may be an Alq3 (Tris (8-hydroxyquinolinato) aluminum), TPBi (1,3,5- (4-diphenyl-1,10-phenanthroline), Bphen (4,7-diphenyl-1,10-phenanthroline), TAZ (3- (4-Biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazole), NTAZ (4- (Naphthalen- 1 -yl) -3,5-diphenyl-4H- -PBD (2- (4-Biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole), BAlq (Bis (2-methyl-8- quinolinolato- 1'-Biphenyl-4-olato) aluminum, Bebq2 (benzoquinolin-10-olate), ADN (9,10-di (naphthalene-2-yl) anthracene) The thickness of the electron transporting layers may be from about 100 A to about 1000 A, for example, from about 150 A to about 500 A. When the thickness of the electron transporting layer satisfies the above-described range, satisfactory degree Of electrons Transport properties can be obtained.

When an electron transporting region an electron injection layer, an electron transporting region is LiF, LiQ (Lithium quinolate), Li ₂ O, BaO, NaCl, CsF, lanthanide metal such as Yb, or RbCl, such as a metal halide, such as RbI But is not limited thereto. The electron injection layer may also be made of a mixture of an electron transport material and an insulating organometallic salt. The organometallic salt may be a material having an energy band gap of about 4 eV or more. Specifically, for example, the organic metal salt may include metal acetate, metal benzoate, metal acetoacetate, metal acetylacetonate or metal stearate . The thickness of the electron injection layers may be from about 1 A to about 100 A, from about 3 A to about 90 A. When the thickness of the electron injection layers satisfies the above-described range, satisfactory electron injection characteristics can be obtained without substantial increase in driving voltage.

The electron transporting region may include a hole blocking layer, as mentioned above. The hole blocking layer may comprise, for example, at least one of BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) and Bphen (4,7-diphenyl-1,10-phenanthroline) However, the present invention is not limited thereto.

And the second electrode EL2 is provided on the electron transporting region ETR. The second electrode EL2 may be a common electrode or a cathode. And the second electrode EL2 may have a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). The second electrode EL2 may comprise a plurality of layers having a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). Each of the plurality of layers included in the second electrode EL2 may have a thickness of about 10 nanometers (nm) to about 150 nanometers (nm).

The second electrode EL2 may be a transmissive electrode, a transflective electrode, or a reflective electrode. In the case where the second electrode EL2 is a transmissive electrode, the second electrode EL2 may be formed of any of Li, Ca, LiF / Ca, LiF / Al, Al, Mg, BaF, Ba, Ag, , A mixture of Ag and Mg).

The second electrode EL2 may include an auxiliary electrode. The auxiliary electrode includes a film formed by depositing the material so as to face the emission layer (EML), and a transparent metal oxide such as ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide) , ITZO (indium tin zinc oxide), Mo, Ti, and the like.

The second electrode EL2 may be formed of Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, or a compound or mixture thereof (for example, a mixture of Ag and Mg). Or a transparent conductive film formed of a reflective film or a semi-transmissive film formed of the above material and indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide Lt; / RTI >

When the organic light emitting diode OEL is of the top emission type, the first electrode EL1 may be a reflective electrode and the second electrode EL2 may be a transmissive electrode or a transflective electrode. When the organic light emitting diode is of the back emission type, the first electrode EL1 may be a transmissive electrode or a transflective electrode, and the second electrode EL2 may be a reflective electrode.

As a voltage is applied to the first electrode EL1 and the second electrode EL2 in the organic light emitting diode OEL, the holes injected from the first electrode EL1 pass through the hole transport region HTR The electrons injected from the second electrode EL2 are transferred to the light emitting layer EML via the electron transporting region ETR. Electrons and holes are recombined in the light emitting layer (EML) to generate an exciton, and the excitons emit as they fall from the excited state to the ground state.

An encapsulation layer SL is provided on the second electrode EL2. The sealing layer SL covers the second electrode EL2. The sealing layer SL may comprise at least one layer of an organic layer and an inorganic layer. The sealing layer SL may be, for example, a thin sealing layer. The sealing layer SL protects the organic light emitting element OEL.

7A is a schematic cross-sectional view of a flexible display device according to an embodiment of the present invention. 7B is a plan view schematically showing a touch screen panel included in a flexible display device according to an embodiment of the present invention.

8A is a schematic cross-sectional view of a flexible display device according to an embodiment of the present invention. 8B is a plan view schematically illustrating a touch screen panel included in a flexible display device according to an embodiment of the present invention.

7A, 7B, 8A and 8B, a touch screen panel TSP is provided on a flexible display panel DP. The touch screen panel TSP may be provided on the sealing layer (SL in Fig. 6C). The touch screen panel (TSP) can recognize a user's direct touch, indirect touch of a user, direct touch of an object, or indirect touch of an object. Indirect touch refers to the fact that the touch screen panel TSP is at a distance that the user or the object can perceive as being touched even if the user or the object does not directly touch the touch screen panel TSP, ≪ / RTI >

When a direct touch or an indirect touch is generated, for example, a capacitance change occurs between the first sensing electrodes Tx and the second sensing electrodes Rx included in the sensing electrode TE. The sensing signal applied to the first sensing electrodes Tx may be delayed and provided to the second sensing electrodes Rx according to the change of the capacitance. The touch screen panel (TSP) can sense the touch coordinates from the delay value of the sensing signal.

In the display device 10 according to an embodiment of the present invention, the touch screen panel TSP is driven in an electrostatic capacity manner. However, the present invention is not limited to this, . In addition, the touch screen panel TSP may be driven by any one of a self cap method and a mutual cap method.

Referring to FIGS. 1A to 1C, 5A to 5C, 7A, 7B, 8A and 8B, in the touch screen panel TSP, at least a part of the conductive pattern CP is connected to the touch bending portion BF2 . The conductive pattern CP may be included in the touch bending portion BF2 and not included in the touch non-bending portion NBF2. The conductive pattern CP may be included in each of the touch bending portion BF2 and the touch non-bending portion NBF2. The conductive pattern CP may have a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). The conductive pattern CP may comprise a plurality of conductive pattern layers (CPL of FIG. 2B) having a grain size of about 10 nanometers (nm) to about 100 nanometers (nm).

The conductive pattern CP is electrically connected to the sensing electrode TE, the first connection wiring TL1, the second connection wiring TL2, the first fan-out wiring PO1, the second fan-out wiring PO2, A bridge BD1, and a second bridge BD2.

The sensing electrode TE is provided on the sealing layer SL. Although not shown, a separate flexible substrate may be provided between the sensing electrode TE and the sealing layer SL. The sensing electrode TE may have a grain size of 10 nanometers (nm) to 100 nanometers (nm).

The sensing electrode TE includes first sensing electrodes Tx and second sensing electrodes Rx. The first sensing electrodes Tx and the second sensing electrodes Rx are electrically insulated from each other. Each of the first sensing electrodes Tx and the second sensing electrodes Rx may be formed in a substantially rhombic, square, rectangular, circular or unformed shape (e.g., a dendrite structure, Shape), and the like. Each of the first sensing electrodes Tx and the second sensing electrodes Rx may have a mesh shape.

7A and 7B, the first sensing electrodes Tx and the second sensing electrodes Rx may be provided on different layers from each other. For example, the first sensing electrodes Tx may be provided on the sealing layer SL, and the insulating layer IL2 may be provided on the first sensing electrodes Tx. And the second sensing electrodes Rx may be provided on the first sensing electrodes Tx.

The first sensing electrodes Tx may extend in the fifth direction DR5, for example, and may be spaced from each other in the sixth direction DR6. The second sensing electrodes Rx may extend in the sixth direction DR6, for example, and may be spaced apart from each other in the fifth direction DR5.

Referring to FIGS. 8A and 8B, the first sensing electrodes Tx and the second sensing electrodes Rx may be provided on the same layer. Each of the first sensing electrodes Tx and the second sensing electrodes Rx may be provided on the sealing layer SL. The first sensing electrodes Tx may be provided in a fifth direction DR5 and a sixth direction DR6.

The first sensing electrodes Tx spaced in the fifth direction DR5 may be connected by the first bridge BD1. The second sensing electrodes Rx may be provided in the fifth direction DR5 and the sixth direction DR6. The second sensing electrodes Rx spaced in the sixth direction DR6 may be connected by a second bridge BD2. The second bridge BD2 may be provided on the first bridge BD1. Although not shown, an insulating layer may be provided between the second bridge BD2 and the first bridge BD1.

Each of the first bridge BD1 and the second bridge BD2 may have a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). Each of the first bridge BD1 and the second bridge BD2 may be composed of a plurality of layers having a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). Each of the plurality of layers included in each of the first bridge BD1 and the second bridge BD2 may have a thickness of about 10 nanometers (nm) to about 150 nanometers (nm).

The connection wirings TL1 and TL2 are electrically connected to the sensing electrode TE. The connection lines TL1 and TL2 may have a grain size of 10 nanometers (nm) to 100 nanometers (nm).

The connection wirings TL1 and TL2 include first connection wirings TL1 and second connection wirings TL2. The first connection wirings TL1 may be connected to the first sensing electrodes Tx and the first fan-out wirings PO1. The second connection wirings TL2 may be connected to the second sensing electrodes Rx and the second fan-out wirings PO2.

The fan-out wirings PO1 and PO2 are connected to the connection wirings TL1 and TL2 and the pad portions PD1 and PD2. The fan-out wirings PO1 and PO2 include first fan-out wirings PO1 and second fan-out wirings PO2. The first fan-out lines PO1 are connected to the first connection lines TL1 and the first pad portion PD1. The second fan-out wirings PO2 are connected to the second connection wirings TL2 and the second pad portion PD2.

The pad portions PD1 and PD2 are electrically connected to the sensing electrode TE. The pad portions PD1 and PD2 may have a grain size of 10 nanometers (nm) to 100 nanometers (nm). The pad portions PD1 and PD2 may include a plurality of layers having a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). Each of the plurality of layers included in the pad portions PD1 and PD2 may have a thickness of about 10 nanometers (nm) to about 150 nanometers (nm).

The pad portions PD1 and PD2 include a first pad portion PD1 and a second pad portion PD2. The first pad portion PD1 is connected to the first fan-out lines PO1. The first pad unit PD1 may be electrically connected to the first sensing electrodes Tx. And the second pad portion PD2 is connected to the second fan-out lines PO2. The second pad portion PD2 may be electrically connected to the second sensing electrodes Rx.

9A is a schematic cross-sectional view of a sensing electrode included in a touch screen panel according to an embodiment of the present invention.

Referring to FIG. 9A, the sensing electrode TE may include a plurality of sensing electrode layers TEL. The sensing electrode TE may include, for example, two, three, four, five, and six sensing electrode layers TEL. However, the present invention is not limited thereto, and the sensing electrode TE may include seven or more sensing electrode layers TEL. An air layer may be provided between the sensing electrode layers TEL.

Each of the sensing electrode layers TEL may have a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). If the grain size of the sensing electrode layers TEL is less than about 10 nanometers (nm), the resistance of the sensing electrode layers TEL increases and the power consumption for driving the flexible display device 10 . If the grain size of the sensing electrode layers TEL is more than about 100 nanometers (nm), the grain size is large and it is difficult to secure the flexibility of the sensing electrode layers TEL due to bending. As a result, A problem may arise.

Each of the sensing electrode layers TEL may have a thickness of about 10 nanometers (nm) to about 150 nanometers (nm). If the thickness of each of the sensing electrode layers TEL is less than about 10 nanometers (nm), the number of interfaces between the sensing electrode layers TEL increases in the sensing electrode TE of the same thickness, have. Thus, the power consumption for driving the flexible display device (10 in Fig. 5A) can be increased. Also, reliability may be a problem in the process of manufacturing or providing each of the sensing electrode layers TEL. If the thickness of each of the sensing electrode layers TEL is greater than about 150 nanometers (nm), it is difficult to ensure the flexibility of the sensing electrode layers TEL due to bending, thereby causing cracks or disconnection, have.

Each of the sensing electrode layers TEL is not particularly limited as long as it is commonly used. For example, the sensing electrode layers TEL may include at least one of a metal, an alloy of a metal, and a transparent conducting oxide.

The metal may be at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr, .

The transparent conductive oxide may be at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), and ITZO (indium tin zinc oxide) .

9B is a schematic cross-sectional view of a wiring included in a touch screen panel according to an embodiment of the present invention.

Referring to FIG. 9B, the wirings TL1, TL2, PO1, and PO2 may include a plurality of wiring layers TLL. The wirings TL1, TL2, PO1 and PO2 may comprise, for example, two, three, four, five or six wiring layers (TLL). However, the present invention is not limited thereto, and the wirings TL1, TL2, PO1, and PO2 may include seven or more wiring layers TLL. An air layer may be provided between the wiring layers (TLL).

Each of the wiring layers (TLL) may have a grain size of about 10 nanometers (nm) to about 100 nanometers (nm). If the grain size of the wiring layers TLL is less than about 10 nanometers (nm), the resistance of the wiring layers TLL increases, and the power consumption for driving the flexible display device 10 (Fig. 5A) . When the grain size of the wiring layers TLL is larger than about 100 nanometers (nm), the grain size is large and it is difficult to ensure the flexibility of the wiring layers TLL due to bending, thereby causing cracks or disconnection, .

Each of the wiring layers (TLL) may have a thickness of about 10 nanometers (nm) to about 150 nanometers (nm). When the thickness of each of the wiring layers TLL is less than about 10 nanometers (nm), the number of interfaces between the wiring layers TLL in the wiring lines TL1, TL2, PO1, and PO2 of the same thickness increases, . Thus, the power consumption for driving the flexible display device (10 in Fig. 5A) can be increased. Also, reliability may be a problem in the process of manufacturing or providing each of the wiring layers TLL. If the thickness of each of the wiring layers TLL is greater than about 150 nanometers (nm), it is difficult to secure the flexibility of the wiring layers TLL due to bending, thereby causing cracks or disconnection, thereby causing reliability problems.

Each of the wiring layers (TLL) is not particularly limited as long as it is commonly used, and may include at least one of, for example, a metal, an alloy of a metal, and a transparent conducting oxide.

The metal may be at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr, .

The transparent conductive oxide may be at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), and ITZO (indium tin zinc oxide) .

The conductive patterns included in the conventional flexible display device have a grain size larger than that of the conductive pattern according to the embodiment of the present invention and it is difficult to ensure the flexibility of bending. As a result, when the bending is repeated in the flexible display device, there is a problem that cracks or broken lines are generated in the conductive patterns and the reliability of the flexible display device deteriorates.

In addition, it is difficult to secure the flexibility due to bending, and when the bending in any one direction and the bending in the direction opposite to the above direction are repeatedly generated, cracks or broken lines are often generated in the conductive pattern.

The conductive patterns included in the flexible display device according to an embodiment of the present invention include a plurality of conductive pattern layers having grain sizes in the above-mentioned range or having grain sizes in the above-mentioned range, It is possible to secure flexibility according to bending without greatly increasing the bending strength. Therefore, even if bending is repeated in the flexible display device, the occurrence frequency of cracks or disconnection in the conductive pattern is significantly lower than the occurrence frequency of cracks or disconnection in the conventional flexible display device. Thus, the reliability of the flexible display device according to the embodiment of the present invention can be secured.

Also, in the flexible display device according to the embodiment of the present invention, flexibility with respect to bending is ensured, and even when bending in any one direction and bending in a direction opposite to the " The frequency of occurrence of cracks or disconnection can be significantly reduced.

Hereinafter, a method of manufacturing a flexible display device according to an embodiment of the present invention will be described. Hereinafter, differences from the flexible display device according to an embodiment of the present invention will be specifically described, and a part that is not described will follow the flexible display device according to the embodiment of the present invention described above.

10 is a flowchart schematically showing a method of manufacturing a flexible display device according to an embodiment of the present invention.

Referring to FIGS. 1A to 1C, 2A, 2B and 10, a manufacturing method of a flexible display device 10 according to an embodiment of the present invention includes a step S100 of preparing a flexible substrate FB, And providing a conductive pattern CP having a grain size of 10 nanometers (nm) to 100 nanometers (nm) on the substrate FB (S200).

The flexible substrate FB is not particularly limited as long as it can be used normally, but may include plastic, organic polymer, and the like. Examples of the organic polymer constituting the flexible substrate FB include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide, and polyether sulfone. The flexible substrate FB can be selected in consideration of mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and waterproofness. The flexible substrate FB may be transparent.

And the conductive pattern CP is provided on the flexible substrate FB. The step S200 of providing the conductive pattern CP may be performed by sputtering at least one of a metal, an alloy of a metal, and a transparent conductive oxide. For example, the conductive pattern CP may be formed by sputtering at room temperature for about 1 minute to about 3 minutes. For example, the conductive pattern (CP) may be formed by sputtering at about 50 캜 to 60 캜 for about 1 minute to about 3 minutes.

The metal may be at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr, .

The transparent conductive oxide may be at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), and ITZO (indium tin zinc oxide) .

If the grain size of the conductive pattern CP is less than about 10 nanometers (nm) in step S200 of providing the conductive pattern CP, the resistance of the conductive pattern CP increases, Can be increased. If the grain size of the conductive pattern (CP) is more than about 100 nanometers (nm), the grain size is large and it is difficult to secure the flexibility due to bending, thereby causing cracks or disconnection, resulting in reliability problems.

Step S200 of providing a conductive pattern CP may include forming a plurality of conductive pattern layers CPL having a grain size of 10 nanometers (nm) to 100 nanometers (nm) . The step S200 of providing the conductive pattern CP may include forming a first conductive layer by sputtering at least one of a metal, an alloy of a metal, and a transparent conductive oxide, forming a first conductive layer directly on the first conductive layer, Forming a second conductive layer by sputtering at least one of the first conductive layer and the transparent conductive oxide, and forming a conductive pattern by masking and etching portions of the first conductive layer and the second conductive layer.

If the grain size of the conductive pattern layers CPL is less than about 10 nanometers (nm), the resistance of the conductive pattern layers CPL increases, and the power consumption for driving the flexible display device 10 may increase have. If the grain size of the conductive pattern layers CPL is larger than about 100 nanometers (nm), the grain size is large and it is difficult to secure the flexibility of the conductive pattern layers CPL due to bending, Thereby causing problems in reliability.

Each of the conductive pattern layers CPL may have a thickness tl of about 10 nanometers (nm) to about 150 nanometers (nm). If the thickness t1 of each of the conductive pattern layers CPL is less than about 10 nanometers (nm), the number of the interfaces between the conductive pattern layers CPL in the conductive pattern CP of the same thickness t1 The resistance can be increased. Thus, the power consumption for driving the flexible display device 10 can be increased. In addition, reliability may be a problem in the process of manufacturing or providing each of the conductive pattern layers CPL. If the thickness t1 of each of the conductive pattern layers CPL is about 150 nanometers (nm), it is difficult to secure the flexibility of the conductive pattern layers CPL due to bending, thereby causing cracks or breaks, A problem may arise.

Each of the conductive pattern layers CPL is not particularly limited as long as it is commonly used, and may include at least one of, for example, a metal, an alloy of a metal, and a transparent conducting oxide.

The metal may be at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr, .

The transparent conductive oxide may be at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), and ITZO (indium tin zinc oxide) .

The conductive patterns included in the flexible display device manufactured by the conventional manufacturing method of the flexible display device have a grain size larger than that of the conductive pattern according to the embodiment of the present invention and it is difficult to secure flexibility according to the bending. As a result, when the bending is repeated in the flexible display device, there is a problem that cracks or broken lines are generated in the conductive patterns and the reliability of the flexible display device deteriorates.

In addition, it is difficult to secure the flexibility due to bending, and when the bending in any one direction and the bending in the direction opposite to the above direction are repeatedly generated, cracks or broken lines are often generated in the conductive pattern.

The conductive patterns included in the flexible display device manufactured by the method of manufacturing a flexible display device according to an embodiment of the present invention may have a plurality of conductive patterns having the grain sizes in the above- It is possible to secure flexibility according to the bending without increasing the resistance of the conductive pattern significantly, including the pattern layers. Therefore, even if bending is repeated in the flexible display device, the occurrence frequency of cracks or disconnection in the conductive pattern is significantly lower than the occurrence frequency of cracks or disconnection in the conventional flexible display device. Thus, the reliability of the flexible display device according to the embodiment of the present invention can be secured.

The flexible display device manufactured by the manufacturing method of a flexible display device according to an embodiment of the present invention has flexibility in bending and is capable of bending in any one direction and bending in the opposite direction The occurrence frequency of cracks or disconnection in the conductive pattern can be remarkably reduced.

Hereinafter, the present invention will be described more specifically by way of specific examples. The following examples are provided to aid understanding of the present invention, and the scope of the present invention is not limited thereto.

Example

Example 1

Al was sputtered to a thickness of about 50 nm on a PC (PolyCarbonate) substrate to form a conductive pattern. An insulating layer was formed on the conductive pattern.

Example 2

The procedure of Example 1 was repeated except that Al was formed to a thickness of about 100 nm to form a conductive pattern.

Example 3

Aluminum was sputtered on a PC (PolyCarbonate) substrate at about 60 DEG C for about 2 minutes to form a conductive pattern layer having a thickness of 50 nm six times to form a conductive pattern including six conductive pattern layers.

Example 4

Example 3 was carried out in the same manner as in Example 3, except that sputtering was performed at about 20 캜, which is not about 60 캜.

Example 5

Cu was sputtered on a PC (PolyCarbonate) substrate to form a conductive pattern layer having a thickness of 50 nm six times to form a conductive pattern including six conductive pattern layers.

Example 6

Al was sputtered on a PC (PolyCarbonate) substrate to form a first Al conductive pattern layer having a thickness of 150 nm, Ti was sputtered on the first Al conductive pattern layer to form a Ti conductive pattern layer having a thickness of 5 nm, Al was sputtered on the layer to form a second Al conductive pattern layer having a thickness of 150 nm.

Example 7

Al was sputtered on a PC (PolyCarbonate) substrate to form a first Al conductive pattern layer having a thickness of 100 nm, Cu was sputtered on the first Al conductive pattern layer to form a Cu conductive pattern layer having a thickness of 100 nm, Al was sputtered on the layer to form a second Al conductive pattern layer having a thickness of 100 nm.

Example 8

Ti was sputtered on a PC (PolyCarbonate) substrate to form a Ti conductive pattern layer with a thickness of 20 nm, Cu was sputtered on the Ti conductive pattern layer to form a Cu conductive pattern layer with a thickness of 150 nm, and Al Was sputtered to form an Al conductive pattern layer having a thickness of 150 nm.

Comparative Example 1

Except that Al was sputtered on a PC (PolyCarbonate) substrate at about 60 DEG C for about 2 minutes to form a conductive pattern with a thickness of 300 nm.

Comparative Example 2

Comparative Example 1 was carried out in the same manner as in Comparative Example 1, except that sputtering was performed at about 20 캜 instead of about 60 캜.

Comparative Example 3

Except that a conductive pattern was formed on a PC (PolyCarbonate) substrate with Al being 200 nm thick.

1. Measurement.

1) Measurement of grain size

Sections of the conductive patterns of each of Examples 1 to 3, Examples 5 to 8, and Comparative Examples 1 and 2 were photographed by SEM (Scanning Electron Microscope), and the grain size was measured. SEM photographs were taken using Helios 450 from FEI. The measured SEM images are shown in Figs. 11A and 11B, and the grain sizes are shown in Table 1 below. In addition, cross sections of Examples 3 and 4 and Comparative Examples 1 and 2 were photographed and shown in Fig.

Size of grain (nm) Example 1 29 Example 2 58 Example 3 32 Example 5 38.6 Example 6 97.7 Example 7 69.9 Example 8 88.1 Comparative Example 1 196 Comparative Example 3 119

2) Number of grains

Sections of the conductive patterns of each of Examples 1 and 2 and Comparative Examples 1 and 2 were photographed by SEM and the number of grains was measured within a unit area of 1 square micrometer (탆 ² ). The number of grains is shown in Table 2 below.

Number of grains () Example 1 1189 Example 2 297 Comparative Example 1 26 Comparative Example 3 71

3) Confirm whether the inner bend and outer bend are broken.

It was confirmed whether or not the inner bending of each of Examples 1 to 8 and Comparative Examples 1 and 3 was broken, and whether the outer bending was broken according to the inner bending. Fig. 13 shows whether or not each of the comparative examples 1 and 3 is broken according to the inner bending.

4) Measurement of resistance change rate by inner bending and outer bending

The resistance change rate according to the inner bending of each of Examples 1, 2 and 5, and Comparative Examples 1 and 3 and the rate of change of resistance according to the outer bending were measured. Table 3 shows the rate of change in resistance due to the inner bending, and Table 4 shows the rate of change in resistance according to the outer bending.

Rate of change in resistance (%) Inner bending times Example 1 Example 2 Example 5 Comparative Example 1 Comparative Example 3 0 0 0 0 0 0 50000 0 0 0 500 0 100000 0 0 0 500 9 150000 0 0 0 500 19 200000 0 0 0 500 24

Rate of change in resistance (%) Outside bending times Example 1 Example 2 Example 5 Comparative Example 1 Comparative Example 3 0 0 0 0 0 0 50000 0 0 0 303 0 100000 2 4 5 448 11 150000 3 6 5 506 27 200000 3 10 5 528 54

2. Measurement results

1) Measurement of grain size

Referring to Figs. 11A, 11B, and 12 and Table 1, it was confirmed that the grain sizes of Examples 1 to 8 were smaller than those of Comparative Examples 1 and 2, respectively.

2) Number of grains

As can be seen in Table 2, it was confirmed that the number of grains in Examples 1 and 2 was larger than the number of grains in Comparative Examples 1 and 3.

3) Confirm whether the inner bend and outer bend are broken.

In Examples 1 to 8, disconnection was not caused by inner bending and outer bending, but in Comparative Examples 1 and 3, as shown in FIG. 13, both inner bending and outer bending caused disconnection.

4) Measurement of resistance change rate by inner bending and outer bending

Referring to Tables 3 and 4, in Examples 1, 2 and 5, the rate of resistance change due to the inner bending and the rate of change in resistance according to the outer bending hardly occur. In Comparative Examples 1 and 3, It was confirmed that the rate of resistance change due to the outer bending was large.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood. It is therefore to be understood that the above-described embodiments are illustrative and non-restrictive in every respect.

10: Flexible display device FB: Flexible substrate
CP: conductive pattern DP: display panel
TSP: Touch screen panel

Claims (41)

A flexible substrate including a bending portion; And
At least a portion of which is provided on the bending portion, the conductive pattern having a plurality of grains,
The grains
And a grain size of 10 nanometers (nm) to 100 nanometers (nm). The method according to claim 1,
The conductive pattern
Within a unit area of 1 square micrometer (㎛ ² )
≪ / RTI > comprising from 200 to 1200 grains. The method according to claim 1,
The conductive pattern
Wherein the flexible display device includes at least one of a metal, an alloy of the metal, and a transparent conducting oxide. The method of claim 3,
The metal
And at least one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr. The method of claim 3,
The transparent conductive oxide
Wherein at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and indium tin zinc oxide (ITZO) is used. The method according to claim 1,
The conductive pattern
Wherein each of the plurality of conductive pattern layers includes a plurality of conductive pattern layers each having a grain size of 10 nanometers (nm) to 100 nanometers (nm). The method according to claim 6,
Each of the conductive pattern layers
And a thickness of 10 nanometers (nm) to 150 nanometers (nm). The method according to claim 6,
Each of the conductive pattern layers
Wherein the flexible substrate is made of the same material. The method according to claim 6,
The conductive pattern
A first conductive pattern layer;
A first air layer provided on the first conductive pattern layer;
A second conductive pattern layer provided on the first air layer;
A second air layer provided on the second conductive pattern layer; And
And a third conductive pattern layer provided on the second air layer. 10. The method of claim 9,
Wherein each of the first conductive pattern layer and the third conductive pattern layer has a thickness of 10 nanometers (nm) to 150 nanometers (nm)
Wherein the second conductive pattern layer has a thickness of less than 5 nanometers (nm) and less than 10 nanometers (nm). The method according to claim 6,
The conductive pattern
A first conductive pattern layer including Al;
A second conductive pattern layer provided on the first conductive pattern layer and including Ti; And
And a third conductive pattern layer provided on the second conductive pattern layer and including Al. The method according to claim 6,
The conductive pattern
A first conductive pattern layer including Al;
A second conductive pattern layer provided on the first conductive pattern layer and including Cu; And
And a third conductive pattern layer provided on the second conductive pattern layer and including Al. The method according to claim 6,
The conductive pattern
A first conductive pattern layer containing Ti;
A second conductive pattern layer provided on the first conductive pattern layer and including Cu; And
And a third conductive pattern layer provided on the second conductive pattern layer and including Al. The method according to claim 1,
The conductive pattern
A wiring having a grain size of 10 nanometers (nm) to 100 nanometers (nm); And
And an electrode electrically connected to the wiring and having a grain size of 10 nanometers (nm) to 100 nanometers (nm). 15. The method of claim 14,
The wiring
Wherein each of the plurality of wiring layers includes a plurality of wiring layers each having a grain size of 10 nanometers (nm) to 100 nanometers (nm). 16. The method of claim 15,
Each of the wiring layers
And a thickness of 10 nanometers (nm) to 150 nanometers (nm). 15. The method of claim 14,
The electrode
Wherein each of the plurality of electrode layers includes a plurality of electrode layers each having a grain size of 10 nanometers (nm) to 100 nanometers (nm). 18. The method of claim 17,
Each of the electrode layers
And a thickness of 10 nanometers (nm) to 150 nanometers (nm). The method according to claim 1,
Further comprising an insulating layer,
The wiring
A first wiring provided between the flexible substrate and the insulating layer; And
And a second wiring provided on the insulating layer. 20. The method of claim 19,
The first wiring
A plurality of first wiring layers each having a grain size of 10 nanometers (nm) to 100 nanometers (nm)
The second wiring
Wherein each of the plurality of second wiring layers includes a plurality of second wiring layers each having a grain size of 10 nanometers (nm) to 100 nanometers (nm). 21. The method of claim 20,
Each of the first wiring layers and the second wiring layers
And a thickness of 10 nanometers (nm) to 150 nanometers (nm). The method according to claim 1,
The flexible display device
The first mode in which at least a part of the flexible substrate and the conductive pattern is bended, or the second mode in which the bending is deployed. 22. The method of claim 21,
The first mode
A first bending mode bending in either direction with respect to the bending axis; And
And a second bending mode in which the bending direction is bent in a direction opposite to the one direction with respect to the bending axis. A flexible display panel including a panel bending portion; And
And a touch screen panel including a touch bending portion and provided on the flexible display panel,
At least one of the flexible display panel and the touch screen panel
And a conductive pattern comprising a plurality of conductive pattern layers each having a grain size of 10 nanometers (nm) to 100 nanometers (nm)
Wherein the conductive pattern is included in at least one of the panel bending portion and the touch bending portion. 25. The method of claim 24,
The conductive pattern
Wherein the flexible display device includes at least one of a metal, an alloy of the metal, and a transparent conducting oxide. 25. The method of claim 24,
Each of the conductive pattern layers
And a thickness of 10 nanometers (nm) to 150 nanometers (nm). 25. The method of claim 24,
The flexible display panel
A plurality of gate wirings;
A plurality of data lines electrically connected to the gate lines; And
Each of the plurality of pixels being connected to at least one of the gate lines and at least one of the data lines,
At least one of the gate wirings and the data wirings
Wherein the conductive pattern is the conductive pattern. 28. The method of claim 27,
The plurality of pixels
A thin film transistor including a semiconductor pattern, a source electrode electrically connected to the semiconductor pattern, and a drain electrode spaced apart from the source electrode,
At least one of the semiconductor pattern, the source electrode, and the drain electrode
Wherein the conductive pattern is the conductive pattern. 25. The method of claim 24,
The touch screen panel
Sensing electrodes;
A pad portion electrically connected to the sensing electrode;
A connection wiring connected to the sensing electrode; And
And a fan-out wiring connected to the connection wiring and the pad portion,
Wherein at least one of the sensing electrode, the pad portion, the connection wiring, and the fan-
Wherein the conductive pattern is the conductive pattern. 30. The method of claim 29,
The sensing electrode
Wherein the flexible display device has a mesh shape. 25. The method of claim 24,
The flexible display device
The first mode in which at least a part of the conductive pattern is bended or the second mode in which the bending is deployed. 32. The method of claim 31,
The first mode
A first bending mode bending in either direction with respect to the bending axis; And
And a second bending mode in which the bending direction is bent in a direction opposite to the one direction with respect to the bending axis. A flexible display panel; And
And a touch screen panel including a touch bending portion,
The touch bending portion
And a sensing electrode having a mesh shape,
The sensing electrode
A plurality of sensing electrode layers,
The sensing electrode layers
Wherein the flexible substrate is made of the same material. 34. The method of claim 33,
The material
Wherein the first electrode is one of Al, Cu, Ti, Mo, Ag, Mg, Pt, Pd, Au, Ni, Nd, Ir and Cr. 34. The method of claim 33,
Each of the sensing electrode layers
And a grain size of 10 nanometers (nm) to 100 nanometers (nm). 34. The method of claim 33,
Each of the sensing electrode layers
And a thickness of 10 nanometers (nm) to 150 nanometers (nm). 34. The method of claim 33,
The flexible display device
A first mode in which at least a part of the flexible substrate and the conductive pattern are bending, or a second mode in which the bending is deployed,
The first mode
A first bending mode bending in either direction with respect to the bending axis; And
And a second bending mode in which the bending direction is bent in a direction opposite to the one direction with respect to the bending axis. Preparing a flexible substrate; And
And providing a conductive pattern having a grain size of 10 nanometers (nm) to 100 nanometers (nm) on the flexible substrate. 39. The method of claim 37,
The step of providing the conductive pattern
Wherein at least one of the metal, the alloy of the metal and the transparent conductive oxide is sputtered. 39. The method of claim 38,
The step of providing the conductive pattern
And forming a plurality of conductive pattern layers each having a grain size of 10 nanometers (nm) to 100 nanometers (nm). 39. The method of claim 38,
The step of providing the conductive pattern
Forming a first conductive layer by sputtering at least one of a metal, an alloy of the metal, and a transparent conductive oxide; And
Sputtering at least one of a metal, an alloy of the metal, and a transparent conductive oxide directly on the first conductive layer to form a second conductive layer; And
And forming the conductive pattern by masking and etching a part of the first conductive layer and the second conductive layer.

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