KR20150042989A - Organic Light Emitting Diode Display Device And Manufacturing Method Of The Same - Google Patents

Abstract

The present invention provides an organic light emitting diode display device which includes a first substrate, a thin film transistor which is formed on the first substrate and includes a source electrode and a drain electrode, an insulation layer which is located on the upper side of the thin film transistor, an anode electrode which is located on the upper side of the insulation layer and is connected to the thin film transistor, an auxiliary ground electrode which is adjacent to the anode electrode and is separately arranged, a reverse taped partition which is located on the upper side of the auxiliary ground electrode, a bank which distinguishes the anode electrode from the auxiliary ground electrode, an organic layer which is deposited on the upper sides of the partition and the anode electrode, and a cathode electrode which is deposited on the upper sides of the partition and the organic layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode (OLED) display device,

The present invention relates to a manufacturing method for reducing the number of mask layers required to form barrier ribs in an organic light emitting diode display device and a manufacturing method thereof.

Conventionally, a display device which mainly uses a cathode ray tube (OLT) has developed from a device using a liquid crystal panel to an organic light emitting diode (OLED) panel. OLED panels were initially applied to small-sized display devices, but gradually applied to large-sized display devices and used in various fields.

The top emission organic light emitting diode (TE OLED) emits light on the surface where the circuit is formed. It emits light directly to the transparent substrate without passing through the circuit for blocking light, have.

The TE OLED display device generally uses a cathode electrode as a ground electrode. Since the cathode electrode is generally formed of Mg, Ag, Ca, Mg: Ag, Al: Li, etc., .

The cathode electrode having such a structure has a high surface resistance. As the area of the panel is gradually widened, it becomes difficult to generate holes that recombine with the electric charge due to the increased surface resistance, so that the luminance representation gradually decreases. Thereby causing a problem that the luminance becomes uneven.

In order to solve this problem, a method has been proposed in which a supplementary ground electrode is formed in one pixel and then connected to the cathode electrode to complement the surface resistance of the cathode electrode.

1 is a cross-sectional view showing an array substrate of a TE OLED display device in which banks are formed.

1, an array substrate of a conventional TE OLED display device includes a first substrate 1, a switching transistor (not shown) and a driving transistor DTr formed on the first substrate 1, An anode electrode 11 connected to the driving transistor DTr through a first contact hole CT1 formed in the insulating film 15 and an insulating film 15 formed to cover the driving transistor DTr, The auxiliary ground electrode 13 formed on the same layer as the anode electrode 11 and separated from the driving transistor DTr and the anode electrode 11 is formed, And the bank 31 is formed while the anode electrode 11 is spaced apart.

The gate electrode G and the source electrode S, the drain electrode D, and the semiconductor T are formed in the same structure as the driving transistor DTr. The switching transistor (not shown) and the driving transistor DTr have the same structure. And the gate electrode G is laminated on the gate insulating film 5 to be spaced apart from the source electrode S and the drain electrode D and the semiconductor T and the drain electrode D is formed on the anode electrode (11).

At this time, the bank 31 is formed between the anode electrode 11 and the auxiliary ground electrode 13 and is made of a positive photoresist which is soluble in exposure and removes the exposure surface in the shape. .

When an organic film (not shown) is stacked on the structure, the auxiliary ground electrode 13 is covered by an organic film (not shown) and can not be connected to the cathode electrode (not shown).

Hereinafter, a process of forming barrier ribs for preventing this will be described with reference to FIG.

2 is a cross-sectional view showing an array substrate of a TE OLED display device in which banks and barrier ribs are formed.

As shown in FIG. 2, the TE OLED display array substrate on which the barrier ribs 32 are formed is formed on the auxiliary ground electrode 13 and is formed of a negative photo resist.

At this time, the barrier rib 32 has a reverse taper shape whose upper side is longer than the lower side, which is insoluble at the time of exposure, so that a negative photoresist (negative photo resist) By decreasing the amount of exposure and causing the lower photoresist to exhibit insolubility slower than the upper photoresist.

The barrier rib 32 thus formed can cover the auxiliary ground electrode 13 to prevent the organic film 40 from being laminated on the auxiliary ground electrode 13 and after the deposition of the organic film 40, The cathode electrode 51 and the auxiliary ground electrode 13 are connected to each other to manufacture a TE OLED display device capable of compensating the center luminance.

Although the TE OLED display device manufactured through the above structure has an advantage in that the cathode electrode 51 can be easily connected to the auxiliary ground electrode 13, the characteristics of the material forming the bank 31 and the barrier rib 32 The number of manufacturing steps is increased, and the manufacturing cost of the TE OLED display device is increased due to the additional cost of manufacturing the mask layer.

The present invention relates to an organic light emitting diode (OLED) display device and a method of manufacturing the organic light emitting diode display device, In order to solve the problem that the total manufacturing cost is increased according to the additional mask process.

In order to solve the above-described problems, the present invention provides a plasma display panel comprising: a first substrate; A driving and switching transistor formed on the first substrate and each formed of a gate electrode, a source electrode, a drain electrode, and a semiconductor; An anode connected to the drain electrode of the driving transistor, and an auxiliary ground electrode adjacent to the anode electrode and spaced apart from each other; A reverse tapered partition located above the auxiliary ground electrode; A bank that is formed of the same material as the barrier ribs and that separates the anode electrode and the auxiliary ground electrode; An organic film stacked on the anode electrode and the barrier rib; A cathode electrode deposited on the organic layer and the barrier rib, and a transparent electrode layer coated on the cathode electrode.

The anode electrode includes a transparent electrode material having high light transmittance and high electrical conductivity.

The bank and the bank are formed of a negative photoresist.

The gate electrode of the driving transistor and the drain electrode of the switching transistor are connected to each other.

And, the driving and switching transistors include using an oxide semiconductor or low temperature polysilicon as a semiconductor.

The cathode electrode may be formed of an opaque conductive material such as Mg, Ag, Ca, Mg: Ag, or Al: Li to have a thickness of 200 Å on the organic layer.

The transparent electrode layer is characterized by high light transmittance and high electrical conductivity, such as ITO, IZO, and IGZO.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a driving and switching transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor on a first substrate; Forming an insulating film on the first substrate; Forming an anode electrode connected to a drain electrode of the driving transistor by forming a contact hole in the insulating film and forming an auxiliary ground electrode at a position spaced apart from the anode electrode; Depositing a photoresist layer on the first substrate; Wherein a transmissive portion is formed at a corresponding position between the anode electrode and the auxiliary ground electrode, a semi-transmissive portion is formed at a position corresponding to the auxiliary ground electrode, and the transmissive portion and the semi- Exposing and removing the mask layer formed thereon; Depositing an organic film on the first substrate; Depositing a cathode electrode on the first substrate; And applying a transparent electrode layer to the first substrate. The present invention also provides a method of manufacturing an organic light emitting diode display device.

The photoresist layer is a negative photoresist.

The step of exposing and removing the photoresist layer may further include adjusting the exposure time and the exposure angle so that the bank exhibits a tapered shape and the partition wall exhibits an inverted tapered shape.

The organic light emitting diode display device and the method of manufacturing the same according to the present invention can reduce the manufacturing cost by using the mask layer and the negative photo resistor having the semitransmissive portion, the transmitting portion, and the blocking portion, unlike the conventional method of forming the partition using two mask layers. The organic light emitting diode display device manufactured according to the present invention has the effect of uniformly expressing the luminance per position even when the area is widened.

1 is a cross-sectional view showing an array substrate of a TE OLED display device in which banks are formed.
2 is a cross-sectional view showing an array substrate of a TE OLED display device in which banks and barrier ribs are formed.
3 is a cross-sectional view of a TE OLED display device according to an embodiment of the present invention.
4 to 10 are cross-sectional views illustrating a manufacturing process of a TE OLED display device having banks and barrier ribs according to an embodiment of the present invention.

Hereinafter, an organic light emitting diode display device and a method of manufacturing the same according to the present invention will be described with reference to the drawings.

3 is a cross-sectional view of a TE OLED display device according to an embodiment of the present invention.

3, a TE OLED display device according to an embodiment of the present invention includes a first substrate 101 on which a driving and switching transistor DTr (not shown) is formed, An anode electrode 111 connected to the drain electrode D of the driving transistor DTr through a first contact hole CT1 formed in the insulating film 115 and an anode electrode 111 connected to the drain electrode The auxiliary ground electrode 113 formed on the insulating film 115 and spaced apart from the anode electrode 111 and the anode electrode 111 and the bank formed between the anode electrode 111 and the auxiliary ground electrode 113, An organic layer 140 stacked on the first substrate 101 on which the barrier ribs 132 are formed and a barrier rib 132 formed on the auxiliary ground electrode 113, And a transparent electrode layer 152 formed on the cathode electrode 151. The cathode electrode 151 is formed on the upper surface of the cathode electrode 151, To include a diode (not shown).

In this case, the first substrate 101 is an insulating substrate, and the driving transistor DTr formed on the first substrate 101 has a low voltage of the source electrode S when a voltage is applied to the gate electrode G (Not shown) of a switching transistor (not shown), which is applied to the drain electrode D through a semiconductor T formed of polysilicon, polysilicon, or oxide thin film transistor, And a gate electrode G connected to the gate electrode.

The switching transistor (not shown) may have the same structure as the driving transistor DTr, and the structure of the switching transistor (not shown) and the driving transistor DTr and the material forming the switching transistor (not shown) are not limited to the above description.

The insulating film 115 located on the upper portion of the driving transistor DTr is electrically isolated from the source electrode S or the drain electrode D of the driving transistor DTr by the anode electrode 111 and the auxiliary ground electrode 113 In the drawings, planarization is shown. However, the planarization is not limited to the flattened planarization.

The anode electrode 111 is connected to the drain electrode D of the driving transistor DTr through the first contact hole CT1 and transmits electrons to the organic film 140 deposited on the anode electrode 111 to generate light. .

The auxiliary ground electrode 113 is provided to improve the structure in which the conventional cathode electrode 151 has a reduced center luminance due to surface resistance and is spaced apart from the anode electrode 111 and the drain electrode D, As shown in FIG.

In the embodiment of the present invention, the banks 131 and the barrier ribs 132 are formed of the same material in the same layer and are formed of a negative photoresist exhibiting insulating properties.

The bank 131 has a taper shape whose upper side is shorter than the lower side and serves to separate the anode electrode 111 from the auxiliary ground electrode 113.

In the case of the barrier ribs 132, the upper side is formed to be longer than the lower side so that the barrier ribs 132 appear in an inverted tapered shape that can indicate the shielding regions 145. In this case, the organic film 140 is stacked on the auxiliary ground electrode 113 So that the auxiliary ground electrode 113 is exposed to the outside of the stacked organic film 140.

The cathode electrode 151 generates holes so that electrons transferred from the first and second anode electrodes 111 and 112 to the organic layer 140 can recombine.

Since the cathode 151 formed on the TE OLED display device is formed at a position where light is output, a material such as Mg, Ag, Ca, Mg: Ag, or Al: Li is formed to a thickness of 200 Å, Is not reduced.

Meanwhile, the barrier rib 132 of the TE OLED display device according to the embodiment of the present invention may be formed at a position where the auxiliary ground electrode 113 and the gate wiring (not shown) cross each other, (Not shown) on the entire surface of the position, or may extend in the direction of the gate wiring (not shown).

The transparent electrode layer 152 is stacked in order to reduce the surface resistance of the cathode electrode 151 which has been conventionally formed to have a thickness of 200 ANGSTROM and can be applied to the auxiliary ground electrode 113 exposed by the partition wall 132, .

The banks and barrier ribs of the TE OLED display device may be manufactured by a mask layer having a transflective portion, a transmissive portion, and a blocking portion, which will be described with reference to FIGS. 4 to 10 below.

4 to 10 are cross-sectional views illustrating a manufacturing process of a TE OLED display device having banks and barrier ribs according to an embodiment of the present invention.

4, a gate electrode G is formed on an upper portion of a first substrate 101, and a gate electrode G is formed on an upper portion of a gate electrode G. In order to manufacture a TE OLED display device according to an embodiment of the present invention, A source electrode S and a drain electrode D which are connected to each other through a semiconductor 108 are formed on the gate insulating film 105 to form a driving transistor DTr and a switching transistor And then connected to the drain electrode D through a first contact hole CT1 formed in an insulating film 115 and an insulating film 115 at a position corresponding to the drain electrode D, The anode electrode 111 is formed and the auxiliary ground electrode 113 is formed on the same layer as the anode electrode 111 at a position spaced apart from the anode electrode 111 and the drain electrode D by the same process .

In addition, a process for creating a diode (not shown) for rectifying supply must be added.

In this case, although the driving transistor DTr is illustrated as a reverse staggered structure in the drawing, it is shown in one embodiment, and the process and structure for forming the thin film transistor are not limited to the shape and the type thereof It is clear that it does not receive.

Then, as shown in FIG. 5, a photoresist layer 120 is stacked on top of the first substrate 101 to form banks and barrier ribs.

At this time, the photoresist layer 120 is a negative photoresist. Generally, the photoresist layer 120 reacts with UV light and is insoluble by light. Thus, the exposed portion is not removed and shrinkage occurs depending on the exposure amount use.

6, a mask layer M having a transflective portion H, a transmissive portion O, and a blocking portion C is disposed on the photoresist layer 120, and then exposed to light do.

At this time, the mask layer M located on the upper part of the auxiliary ground electrode 113 is provided with the transflective portion H, and the upper portion between the auxiliary ground electrode 113 and the anode electrode 111 spaced apart from each other, And the cutoff portion C is positioned above the anode electrode 111. [0064] As shown in FIG.

When the mask layer M is used to expose the photoresist layer 120, the photoresist layer 120 located in the transmissive portion O is insoluble as the amount of exposure increases, Many upper sides are gradually contracted.

Thus, the photoresist layer 120 located in the transmissive portion O may exhibit a tapered shape.

Since the photoresist layer 120 located in the transflective portion H has a smaller amount of exposure than the transmissive portion O, the photoresist layer 120 takes longer time to be insoluble than the transmissive portion O, The exposed amount of exposure is much less than that of the upper part, and only a part located at the center among the exposed areas is insoluble.

In particular, in the case of the upper side, even when exposure is performed so that insolubility appears in a part of the lower side, since the amount of exposure is small, shrinkage does not occur largely and the length of the upper side can be maintained. In the case of the lower side, Since it shows insolubility, the lower region showing insolubility increases as the exposure amount increases.

Accordingly, the photoresist layer 120 located in the transflective portion H may exhibit an inverted tapered shape.

Since the taper and the reverse taper are formed of negative photoresist and the amount of shrinkage changes according to the exposure amount, the angle of the taper and reverse taper structures can be adjusted by controlling the time, the exposure angle, or the exposure amount.

Thereafter, the photoresist layer 120 (FIG. 5) is developed as shown in FIG.

3) of the mask layer (M in Fig. 3) is completely removed by development, and the photoresist in the mask layer (M in Fig. 3) The mask layer (M in FIG. 3) is used as a bank 131 which is insoluble in a taper shape while being shrunk on the upper side of the photoresist layer 120 and exhibits a taper shape after development, as described above, The photoresist exposed by the semi-transparent portion (H in Fig. 3) of the photoresist gradually increases in the amount of the insolubilized photoresist from the upper side to the lower side, And is used as the barrier ribs 132. [

Thereafter, the organic film 140 is stacked as shown in FIG.

Since the barrier ribs 132 are longer than the lower barrier ribs 132, the organic layers 140 may not be stacked on the auxiliary ground electrodes 113 corresponding to the upper side of the barrier ribs 132, (113) may be exposed to the outside of the organic film (140).

Thereafter, the cathode electrode 151 is deposited as shown in FIG.

The cathode electrode 151 is formed of a material such as Mg, Ag, Ca, Mg: Ag, and Al: Li, and may be formed to have a thickness of 200 ANGSTROM.

Thereafter, a transparent electrode layer 152 is deposited as shown in FIG.

The transparent electrode layer 152 has high light transmittance and electrical conductivity and can electrically connect the cathode electrode 151 and the auxiliary ground electrode 113 exposed by the barrier rib 132 to the cathode electrode 151 Can be compensated for.

The transparent electrode layer may be formed of a transparent material such as indium tin oxide (ITO), indium zinc oxide (IZO), or indium gallium zinc oxide (IGZO), or may be replaced with another material having a high transmittance and high electrical conductivity .

In addition, when the first substrate 101 is used as a transparent insulating substrate, the TE OLED display device having the above-described structure can emit light from both sides of the substrate. Therefore, the first substrate 101 may be formed of an opaque material, A reflection plate for reflecting the light toward one side can be further added to output light from one side.

The TE OLED display device thus manufactured has an auxiliary ground electrode 113 and a partition wall 132 for exposing the auxiliary ground electrode 113 from the organic layer 140 so as to reduce the surface resistance of the cathode electrode 151 And the manufacturing method for manufacturing the same may be the same as the number of masks used in manufacturing the TE OLED display device not including the barrier rib 132 and the auxiliary ground electrode 113, This shows the effect of saving.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. It can be understood that

TR: thin film transistor 111: first anode electrode
112: second anode electrode 113: auxiliary ground electrode
120: photoresist layer 131:
132: barrier rib 140: organic film
145: blocking region 151: cathode electrode
152: transparent electrode

Claims (10)

A first substrate;
A driving and switching transistor formed on the first substrate and each formed of a gate electrode, a source electrode, a drain electrode, and a semiconductor;
An insulating film located above the driving and switching transistors,
An anode electrode connected to the drain electrode of the driving transistor,
An auxiliary ground electrode adjacent to the anode electrode and spaced apart from each other;
A reverse tapered partition located above the auxiliary ground electrode;
A bank that is formed of the same material as the barrier ribs and that separates the anode electrode and the auxiliary ground electrode;
An organic film stacked on the anode electrode and the barrier rib;
A cathode electrode deposited on the organic film and the barrier rib;
A transparent electrode layer
And an organic light emitting diode (OLED) display device.
The method according to claim 1,
Wherein the anode electrode is formed of a transparent electrode material having high light transmittance and high electrical conductivity.
The method according to claim 1,
Wherein the bank and the bank are formed of a negative photoresist.
The method according to claim 1,
Wherein a gate electrode of the driving transistor and a drain electrode of the switching transistor are connected to each other.
The method according to claim 1,
Wherein the driving and switching transistors comprise an oxide semiconductor, or low temperature polysilicon as a semiconductor.
The method according to claim 1,
Wherein the cathode electrode is an opaque conductive material such as Mg, Ag, Ca, Mg: Ag, and Al: Li, and is formed to a thickness of 200 A on the organic film.

The method according to claim 1,
Wherein the transparent electrode layer has high light transmittance and high electrical conductivity such as ITO, IZO, and IGZO.
Forming a driving and switching transistor including a gate electrode, a source electrode, a drain electrode and a semiconductor on the first substrate, respectively;
Forming an insulating film on the first substrate;
Forming an anode electrode connected to a drain electrode of the driving transistor by forming a contact hole in the insulating film and forming an auxiliary ground electrode at a position spaced apart from the anode electrode;
Depositing a photoresist layer on the first substrate;
Wherein a transmissive portion is formed at a corresponding position between the anode electrode and the auxiliary ground electrode, a semi-transmissive portion is formed at a position corresponding to the auxiliary ground electrode, and the transmissive portion and the semi- Exposing and removing the mask layer formed thereon;
Depositing an organic film on the first substrate;
Depositing a cathode electrode on the first substrate;
Applying a transparent electrode layer to the first substrate
Wherein the organic light emitting diode display device comprises a light emitting diode.
9. The method of claim 8,
Wherein the photoresist layer is a negative photoresist. ≪ RTI ID = 0.0 > 11. < / RTI >
9. The method of claim 8,
Wherein the step of exposing and removing the photoresist layer further comprises adjusting the exposure time and the exposure angle so that the bank exhibits a tapered shape and the partition wall exhibits an inverted tapered shape. Gt;

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