KR20130098838A - Laser processing apparatus, laser processing method and computer-readable recording medium storing laser processing program - Google Patents

Abstract

PURPOSE: A laser machining apparatus, a laser machining method, and a laser machining program-installed recording medium decoded by a computer are provided to accurately implement a laser machining process regardless of arranging multiple pattern parts. CONSTITUTION: A laser machining apparatus includes a stage (116), a stage control part (104), a microscope part (110), a laser repair head (120), an image processing part (102), a memory part (107), a control part (101), a region determining part (103), a display part (105), and an input part (106). The stage moves within an X-Y plane. The stage control part controls the horizontal movement of the stage. The laser repair head outputs a laser light for repairing a defect, and the laser light is irradiated to a work. The image processing part implements various image processes. The memory part stores various programs or various parameters. The control part implements the programs or the parameters decoded from the memory part. The region determining part adjusts the cross-sectional shape of the laser light for repairing the defect. The display part displays obtained images or a variety of information. [Reference numerals] (100) Laser processing unit; (101) Control unit; (102) Image processing unit; (102a) Extracting unit; (102b) Matching unit; (102c) Mask generation unit; (103) Area setting unit; (104) Stage control unit; (105) Display unit; (106) Input unit; (107) Memory unit; (112) Light source; (121) Laser light source

Description

Computer-readable recording medium recording a laser processing apparatus, a laser processing method and a laser processing program {LASER PROCESSING APPARATUS, LASER PROCESSING METHOD AND COMPUTER-READABLE RECORDING MEDIUM STORING LASER PROCESSING PROGRAM}

The present invention relates to a laser processing apparatus, a laser processing method, and a laser processing program for repairing a patterning error (defect) generated during a patterning process for various substrates.

Background Art Conventionally, in the manufacture of various substrates such as flat panel display (FPD) substrates such as liquid crystal displays (LCDs), plasma display panels (PDPs), organic electroluminescent (EL) displays, semiconductor wafers, and printed circuit boards, In order to improve the yield, after each patterning process, it is checked whether patterning errors (defects) such as short-circuits of wiring and connection defects, disconnection or pattern defects, etc. exist sequentially. As a result of the inspection, if a defect exists, the error site is corrected from time to time.

As a technique for correcting the above-described defects, there is a technique called so-called laser repair that irradiates and corrects laser light on a defect site (see Patent Document 1, for example). In the defect correction method (laser processing apparatus) disclosed in Patent Literature 1, the pattern image of the workpiece is compared with the normal pattern image (reference image) to detect a defect in the pattern, and the pattern of the workpiece obtained from the normal pattern image. A mask image provided with a laser light irradiation area and a non-irradiation area according to the present invention, and a cross-sectional shape of the laser light is molded according to the pattern by using a micromirror array (space modulation device) such as a mask image and a DMD. The defect is corrected by irradiating the workpiece with laser light. In this defect correction method, reshaping a defective pattern into a desired pattern or removing a defect existing near the pattern can be performed. In addition, according to this defect correction method, not only the defects described above, but also foreign substances such as particles and resist adhered to the substrate surface can be removed.

Japanese Patent Application Laid-Open No. 2011-194432

By the way, in the conventional defect correction method disclosed by patent document 1, the mask image according to the pattern of the to-be-processed object of the laser beam is shape | molded. It is a schematic diagram which shows an example of the reference image in the conventional laser processing apparatus. For example, as shown in Fig. 23, when three pattern portions P101 to P103 to be irradiated are formed on the reference image Dr100, a mask image Dm100 for shaping the cross-sectional shape of the laser light ( Mask information). In the mask image Dm100, irradiation portions Pm101 to Pm103 which are irradiation regions of laser light along the three pattern portions P101 to P103 are provided, and other regions are non-irradiated regions to which laser light is not irradiated ( (A) of FIG.

Here, when the space | interval of each irradiation part Pm101-Pm103 formed in the mask image Dm100 is narrow, especially when the laser beam of the wavelength band more than near ultraviolet light is used, the processing precision of the pattern shape to be processed may fall. One of the causes is a change in the profile of the heat distribution of the laser light due to the thermal conductivity of the material used for the processed surface of the workpiece. 24 (b) and 24 (c) show energy distribution during laser light irradiation on the processing surface of the workpiece. For example, when the thermal conductivity, the heat absorption rate of the material used for the processing surface of a workpiece is low, or the specific heat is large, as shown in the graph shown in FIG. 24B, the thermal energy according to the irradiation portions Pm101 to Pm103. It becomes the heat distribution profile shown by curve L1. On the other hand, when the thermal conductivity and heat absorption of the material used for the processed surface of the workpiece are high or the specific heat is small, as shown in the graph shown in Fig. 24C, the heat distribution profile shown in the thermal energy curve L2 is Thus, heat of the laser light is applied to the non-irradiation area of the laser light between the irradiation parts Pm101 to Pm103. In addition, the curve L3 in a graph has shown the ideal heat distribution profile in one irradiation part.

When laser light is irradiated to the workpiece with the heat distribution profile shown in the thermal energy curve L2 shown in FIG. 24C, the pattern portions P101 to P103 are similar to the captured image Da100 shown in FIG. 25. In FIG. 23, pattern portions P104 connected to adjacent pattern portions are formed. Moreover, even if the irradiated area | region and the non-irradiated area | region of a laser beam are reversed, the same problem arises by the space | interval of a non-irradiated area | region, and when irradiating a laser beam and correct | amends a defect, there exists a possibility that the pattern which is non-removing object may be removed. . As described above, depending on the arrangement of the pattern portions, there is a concern that the laser beam irradiation region does not correspond to the desired pattern, and thus the desired laser processing cannot be performed.

This invention is made | formed in view of the said problem, and provides the computer-readable recording medium which recorded the laser processing apparatus, laser processing method, and laser processing program which can perform laser processing correctly irrespective of arrangement | positioning of several pattern part. It aims to do it.

In order to solve the problem mentioned above and achieve the objective, the laser processing apparatus which concerns on this invention is a laser processing apparatus which irradiates a laser beam with respect to the board | substrate with a predetermined pattern, and performs the correction process of the defect on the said board | substrate, The said board | substrate The stage which is relatively movable with respect to the imaging unit which acquires the image which enlarged a part of the said board | substrate, and controls the movement of the said stage, and performs the said correction process at the said defect correction position A matching unit for comparing the stage control unit for moving the stage, a captured image captured at the defect correction position moved by the stage movement by the stage control unit, and a reference image that is a normal pattern, based on the determination by the matching unit; The irradiation area is a region for irradiating the laser light, and the other part is the laser light. A mask generation section for generating a plurality of mask images having non-irradiated areas as the non-irradiation section so as to have the same pattern as the reference image as a whole based on the reference image, and a cross-sectional shape of the light beam cross section of the laser light from the laser light source. The light beam shaping | molding means shaping | molding to the said shape is provided, The said mask generating part produces | generates a mask image so that the distance between each irradiation part may be more than a predetermined distance, when there are multiple said irradiation part in the said mask image.

In the laser processing apparatus according to the present invention, in the above invention, the light beam shaping means includes a two-dimensional modulation element.

In the laser processing apparatus according to the present invention, in the above invention, the mask generating unit is based on the thermal conductivity, the heat absorption rate, the specific heat, the film thickness, the density, the energy of the laser irradiation, and the irradiation size on the substrate or the laser processed surface. To generate a mask image.

Moreover, the laser processing apparatus which concerns on this invention is further equipped with the extraction part which extracts the defect area | region which exists in the said defect correction position in the said invention, and the said mask generation part forms the irradiation part corresponding to the said defect area | region. It features.

In the laser processing apparatus according to the present invention, in the above invention, the mask generating unit divides an area for irradiating the laser light, and forms an irradiation part in each of the divided areas so as to be equal to or more than the predetermined distance. It is done.

Moreover, the laser processing method which concerns on this invention is a laser processing method which irradiates a laser beam with respect to the board | substrate with a predetermined pattern, and performs the correction | amendment process of the defect on the said board | substrate. A stage shift step for moving to a defect correction position to be performed, an imaging step for picking up an image of the substrate at the defect correction position moved by the stage shift step, a captured image picked up by the imaging step, and a reference that is a normal pattern The matching step for comparing the images and the mask image using the area irradiated with the laser light based on the determination by the matching step as the irradiating part, and the other part as the non-irradiating part as the non-irradiating part for the other part are referred to the above. Based on the image, a plurality of images may be generated to have the same pattern as that of the reference image as a whole. A mask generation step and a beam shaping step of shaping the cross-sectional shape of the beam of laser light from the laser light source into a shape according to the mask image, wherein the mask generation step includes a plurality of irradiation units in the mask image, It is characterized by generating a mask image so that the space | interval may be more than predetermined distance.

Moreover, the computer-readable recording medium which recorded the laser processing program which concerns on this invention is a laser processing program for irradiating a laser beam to the board | substrate with a predetermined pattern, and performing a correction process of the defect on the said board | substrate, A stage movement procedure for moving the stage on which the substrate is placed to a defect correction position for performing the correction process, an imaging procedure for imaging an image of the substrate at the defect correction position moved by the stage movement procedure, and the imaging A matching procedure for comparing the captured image captured by the procedure with a reference image that is a normal pattern and a region for irradiating the laser light based on the determination by the matching procedure are used as irradiation units, and other portions are not irradiated with the laser light. Based on the reference image, a mask image having a non-irradiated area And a mask generating procedure for generating a plurality of patterns so as to have the same pattern as the reference image as a whole, and a beam shaping procedure for shaping the cross-sectional shape of the beam of laser light from a laser light source into a shape corresponding to the mask image. When the plurality of irradiation sections are provided in the mask image, a mask image is generated such that the distance between the irradiation sections is a predetermined distance or more.

According to the present invention, a plurality of mask information according to the arrangement of the pattern portion of the laser light irradiation target is generated for one reference image, and the laser light constituting the cross-sectional shape according to each mask image is irradiated. Irrespective of the arrangement of the pattern portions, the effect of being able to perform laser processing accurately is exerted.

BRIEF DESCRIPTION OF THE DRAWINGS It is a conceptual diagram for demonstrating the outline of the defect correction method integrated in the laser processing apparatus which concerns on embodiment of this invention.
2 is a schematic diagram showing a schematic configuration of a laser processing apparatus according to the embodiment of the present invention.
3 is a flowchart showing a schematic flow of a defect correction process including the laser processing performed by the laser processing apparatus according to the embodiment of the present invention.
4 is a schematic diagram illustrating an example of an image of a defect correction target according to an embodiment of the present invention.
FIG. 5: is a schematic diagram which shows an example of the reference image stored in the memory part of the laser processing apparatus which concerns on embodiment of this invention.
6 is a schematic diagram illustrating an example of a defect extraction image according to an embodiment of the present invention.
7 is a schematic diagram showing on and off of each mirror in the micromirror array of the laser processing apparatus according to the embodiment of the present invention.
8 is a schematic diagram illustrating an example of a reference image stored in a storage unit of the laser processing apparatus according to the embodiment of the present invention.
FIG. 9: is a schematic diagram which shows an example of the 1st mask image produced | generated by the laser processing apparatus which concerns on embodiment of this invention.
FIG. 10: is a schematic diagram which shows an example of the 2nd mask image produced | generated by the laser processing apparatus which concerns on embodiment of this invention.
It is a schematic diagram which shows an example of the defect correction process of the laser processing apparatus which concerns on embodiment of this invention.
It is a schematic diagram which shows an example of the defect correction process of the laser processing apparatus which concerns on embodiment of this invention.
It is a schematic diagram which shows an example of the defect correction process of the laser processing apparatus which concerns on embodiment of this invention.
It is a schematic diagram which shows an example of the defect correction process of the laser processing apparatus which concerns on embodiment of this invention.
It is a schematic diagram which shows an example of the defect correction process of the laser processing apparatus which concerns on embodiment of this invention.
FIG. 16: is a schematic diagram which shows the 1st mask image produced | generated by the laser processing apparatus which concerns on the modification 1 of Embodiment of this invention.
It is a schematic diagram which shows the 2nd mask image produced | generated by the laser processing apparatus which concerns on the modification 1 of Embodiment of this invention.
FIG. 18: is a schematic diagram which shows the 1st mask image produced | generated by the laser processing apparatus which concerns on the modification 2 of Embodiment of this invention.
FIG. 19: is a schematic diagram which shows the 2nd mask image produced | generated by the laser processing apparatus which concerns on the modification 2 of Embodiment of this invention.
20 is a schematic diagram illustrating an example of a reference image stored in a storage unit of a laser processing apparatus according to Modification Example 3 of the embodiment of the present invention.
FIG. 21: is a schematic diagram which shows the 1st mask image produced | generated by the laser processing apparatus which concerns on the modification 3 of Embodiment of this invention.
FIG. 22: is a schematic diagram which shows the 2nd mask image produced | generated by the laser processing apparatus which concerns on the modification 3 of Embodiment of this invention.
It is a schematic diagram which shows an example of the reference image in the conventional laser processing apparatus.
24 is a schematic diagram illustrating an example of a mask image generated by a conventional laser processing apparatus and a heat distribution profile.
It is a schematic diagram which shows an example of the image after laser irradiation in the conventional laser processing apparatus.

Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments. In addition, each drawing referred to in the following description is only showing the shape, size, and positional relationship so that the content of this invention can be understood. That is, the present invention is not limited only to the shape, size, and positional relationship illustrated in each drawing.

(Embodiment 1)

EMBODIMENT OF THE INVENTION Hereinafter, the laser processing apparatus, the laser processing method, and the laser processing program concerning Embodiment 1 of this invention are demonstrated in detail using drawing.

1 is a conceptual diagram for explaining an outline of a defect tracking method incorporated in the laser processing apparatus 100 (see FIG. 2) according to the first embodiment. In this Embodiment 1, the laser processing apparatus 100 inputs the coordinate of the defect specified by external inspection means, such as an AOI (Automated Optical Inspection) system, for example. Hereinafter, in this description, a patterning error and a foreign substance such as particles or resist attached to the substrate surface are simply referred to as defects. This coordinate is called a defect coordinate to distinguish it from other coordinates. The defect coordinates are given one by one defect. In addition, in the following description, a coordinate means two-dimensional coordinate in the workpiece | work surface or stage upper surface which made the reference position provided on the stage upper surface on which the board | substrate (henceforth a workpiece | work) is mounted, or the housing | casing which supports the stage as an origin. .

In the defect correction method performed by the laser processing apparatus 100 according to the first embodiment, as shown in FIG. 1A, first, an input defect on the surface of a repair target substrate (hereinafter referred to as a workpiece) is described. The work is moved based on the coordinates, and the stage 116 is controlled so that a defect is taken into the field of view area R1 of the microscope unit 110 (objective lens) in the laser processing apparatus 100. Subsequently, the microscope unit 110 analyzes an image obtained by imaging the visual field region R1 of the objective lens M15, thereby specifying the region (recognition defect region) G1 of the defect G included in this image. do. However, the specific region to be analyzed may be a specific recognition region R2 smaller than the entire view region R1 corresponding to the entire image, not the entire image. In addition, you may set a plurality of this recognition area | region R2 in the visual field area | region R1.

In the microscope section according to the first embodiment, the objective lens M15 is, for example, an objective lens having a relatively low magnification of 1, 2, and 5 times (hereinafter referred to as a "low magnification objective lens"), At least one objective lens (hereinafter referred to as "high magnification objective lens") having a high magnification relative to the magnification of the low magnification objective lens of 10 times, 20 times, and 50 times is attached to the revolver so that the objective lens can be switched. The magnification of the low magnification objective lens and the high magnification objective lens is an example, and the high magnification objective lens should just be high with respect to the low magnification objective lens. In addition, the objective lens M15 of this time (viewing area | region R1) is a low magnification objective lens.

Moreover, in this defect correction method, the coordinate of the center of gravity C1 of the recognition defect area | region G1 which was specified above is specified (refer FIG. 1 (a)), and the visual field area R1 of the defect G is then continued. Tracking process (S1) which tracks the part (or non-recognition defect area | region G2) extended to outside (or recognition area | region R2) is performed. In this Embodiment 1, as this tracking process S1, the center of gravity C1 specified in FIG. 1A as shown in FIG. 1B is attached to the microscope portion of the laser processing apparatus 100. The case where the process (centering) which draws to the center of the visual field area | region R1 by this is performed is taken as an example. By this attracting, as shown in Fig. 1B, at least part or the entirety of the non-recognition defect area G2 that is outside the viewing area R1 among the defects G is dragged into the viewing area R1. Since it is indented, laser repair on this drawn part becomes possible. However, this tracking process S1 is, for example, the coordinates of the calculated center of gravity C1 are located near the outer end of the recognition area R2, that is, within the recognition area R2 and included in the center area R3. May only be executed.

Subsequently, in this defect correction method, as shown in Fig. 1C, the recognition defect region G1a included in the image obtained by imaging the visual field region R1 after the attraction is identified, and this recognition defect is identified. The repair coordinate calculation processing S2 for calculating the center coordinates (repair coordinates) c1 to c5 of one or more shot regions (correction regions) E1 to E5 allocated to the region G1a, respectively, is executed. do.

Next, the objective lens M15 is switched to a high magnification objective lens (laser processing objective lens), and the stage 116 is sequentially arranged at the center coordinates (repair coordinates) c1 to c5 of the shot regions (correction regions) E1 to E5. ), The microscope unit 110 picks up an image within the field of view of the laser processing objective lens. The mask image is created by matching the inspection subject image picked up by the microscope unit 110 with the reference image stored in the storage unit 107 as a recipe beforehand. In addition, the laser processing objective lens may use a low magnification objective lens as long as it can process even if it is low magnification.

After that, as shown in FIG. 1D, the control unit 101 sequentially performs two-dimensional modulation elements (micromirror arrays) based on the obtained mask images in accordance with the calculated repair coordinates c1 to c5. 123)) and laser irradiation of the defect G, the repair process S3 which repairs the defect site | part on the workpiece surface is performed.

According to the above operation, in the first embodiment, even if the defect G is outside the viewing area R1, the defect is drawn after the part outside the viewing area R1 in the defect G is brought into the field of view ˜˜R1. It is possible to allocate the shot regions E1 to E5 (repair coordinates c1 to c5) for (G). As a result, even when the entirety of the defect G cannot be taken by one imaging, it is possible to continuously irradiate the entirety of the defect G, resulting in an increase in the number of strokes and redundancy of the working time. It becomes possible to repair the whole defect G, suppressing it.

Next, the laser processing apparatus 100 which concerns on this Embodiment 1 is demonstrated in detail with reference to drawings. 2 is a block diagram showing a schematic configuration of a laser machining apparatus according to the first embodiment. As shown in FIG. 2, the laser processing apparatus 100 includes a stage 116 that can move in an XY plane, a stage control unit 104 that controls horizontal movement of the stage 116, and a stage 116. The microscope repair part 120 which observes the mounted workpiece | work W10 from upper direction, the laser repair head 120 which outputs the laser beam for defect repair which irradiates the workpiece | work W10, and the microscope part 110 acquired An image processing unit 102 for performing various image processing on image data, and a storage unit 107 for storing various programs, various parameters, and the like, including a laser processing program which is a program for realizing the laser processing method according to the first embodiment. ) And control to control each part in the laser processing apparatus 100 while realizing the defect tracking method according to the first embodiment by executing various programs and parameters read from the storage unit 107. 101 and an area setting unit 103 for adjusting the light beam cross-sectional shape (shape of the cross section perpendicular to the optical axis of the laser light) for the defect repair laser beam output by the laser repair head 120 under the control from the control unit 101. ) And a user interface including a display unit 105 for displaying images and various information acquired by the microscope unit 110, and an input unit 106 for inputting various operations or settings for the laser processing apparatus 100 to the user. Equipped. In addition to the configuration where the stage 116 can move within the XY plane, the microscope 110 may be configured to move within the XY plane, and the stage 116 and the microscope 110 are relatively moved to move the microscope section ( As long as the structure 110 can scan the workpiece | work W10, it may be in any form.

In the above configuration, the workpiece W10 to be repaired is a glass substrate, a semiconductor substrate, a printed circuit board or the like for an FPD in which a predetermined pattern is formed. This work W10 is mounted on the stage 116. On the mounting surface of the stage 116, a myriad of holes are formed. These countless holes are held on the stage 116 by a fixing member (not shown) while the workpiece W10 is raised by a gas supplied from a pump (not shown). Alternatively, this myriad of holes can be connected to a vacuum pump (not shown), and the work W10 placed on the stage 116 can be sucked and fixed to the stage 116 by the intake air from the myriad of holes. . Moreover, as a holding means which hold | maintains the workpiece | work W10 on the stage 116 as mentioned above, you may make it the structure of the roller stage which hold | maintains a board | substrate so that a movement is possible by the some roller which rotates besides the above. In addition, it is good also as a structure which supports a board | substrate using mechanical means, such as a support pin and a clamp mechanism.

The microscope unit 110 includes a light source 112 for illuminating the workpiece W10 on the stage 116 and an imaging element 111 such as a CCD sensor or a CMOS sensor for imaging the illuminated workpiece W10 (this embodiment). In an aspect, the CCD includes a CCD and functions as an imaging unit for acquiring an enlarged image of a part of the workpiece W10 as a target substrate. The illumination light output from the light source 112 of the microscope unit 110 passes through the relay lens M16 and is reflected by the half mirror M14, and then is coaxial with the observation optical axis AX to the workpiece W10. The workpiece W10 is illuminated through the objective lens M15. Moreover, the image of the workpiece | work W10 illuminated in this way is the observation containing objective lens M15, the half mirror M14, the relay lens M13, and the imaging lens M12 arrange | positioned along the observation optical axis AX. By the optical system, the light receiving surface of the imaging element 111 is enlarged and formed, for example, several times to several tens of times. In addition, the viewing area of the imaging element 111 through this observation optical system corresponds to the viewing area R1 shown in FIG. 1. This viewing region R1 is wider than one shot region. In addition, the area | region illuminated by the light source 112 is wider than at least the visual field area R1. In addition, at least in the viewing area R1 is illuminated substantially uniformly from above by the illumination light from the light source 112.

The image data acquired by the imaging element 111 is input to the image processing unit 102. The image processing unit 102 performs various image processing on the input image data, and then inputs the processed image data to the display unit 105. Thereby, the image of the visual field area R1 acquired by the microscope part 110 is displayed on the display part 105 in real time, for example. The image processing unit 102 also stores in the extraction unit 102a which extracts the defective area from the image acquired by the imaging element 111, and the image and storage unit 107 obtained by the imaging element 111. A matching part 102b which performs a matching process using the reference image (normal pattern image) that has been used, and a mask image at the processing target position of the workpiece W10 based on the matching result of the matching part 102b. The mask generating unit 102c generates mask information based on the reference image.

In addition, under the control of the control unit 101, the stage control unit 104 has a defect correction position (predetermined position coordinates such as a defect coordinate, a center of gravity coordinate, and a repair coordinate) input from the control unit 101 to the microscope unit 110. The stage 116 is moved horizontally so as to be located at the center of the viewing area R1. Thereby, the relative position of the microscope part 110 and the workpiece | work W10 is controlled so that the coordinate input from the control part 101 may be located in the center in the visual field area R1 of the microscope part 110. FIG.

The laser repair head 120 includes a laser light source 121 for outputting laser light (hereinafter referred to as a repair laser light) irradiated onto the work W10, and a light beam cross-sectional shape of the laser light from the laser light source 121 (hereinafter referred to as "repair laser light"). As a beam shaping means for shaping a laser cross-sectional shape into a desired shape (a shape according to a mask image to be described later), the micromirror array 123 which is a spatial light modulation element, and the repair laser light from the laser light source 121; And an LED 122 for outputting light (hereinafter referred to as guide light) for adjusting the field of view of the observation optical system, and spatially modulating the workpiece W10 for defect repair based on the image acquired by the microscope unit 110. Irradiate one laser light. The guide light from the LED 122 is reflected by the half mirror M21 so that its optical axis coincides with the optical axis of the laser light source 121.

The optical axis of the repair laser light from the laser light source 121 and the guide light from the LED 122 passes through the high reflection mirror M22, the micromirror array 123, and the high reflection mirror M23, By reflecting from the mirror M24, the optical axis coincides with the observation optical axis AX. Therefore, the repair laser light and the guide light reflected by the half mirror M24 are upwardly above the workpiece W10 on the stage 116 through the relay lens M13, the half mirror M14, and the objective lens M15. It is irradiated along the observation optical axis AX. In addition, for example, DMD (Digital Micromirror Device) may be used for the micro mirror array 123. It is also possible to substitute other devices such as other MEMS devices or transmissive spatial modulators such as liquid crystal shutters as the light beam shaping means. In the case of employing such another device, the optical system described above has a configuration using an appropriate arrangement or member according to the optical conditions in view of the technical common knowledge in the art. In addition, since said LED 122 is used in order to confirm or adjust the irradiation position of a repair laser light by guide light, you may abbreviate | omit as needed.

In addition, the micromirror array 123 which is a spatial light modulation element is equipped with the structure which the micromirror which is one of microdevices is arrange | positioned in 2-dimensional array shape, for example. The reflection angle of each micromirror can be switched to any one of at least two of an on angle and an off angle under the control from the control part 101. The on angle is the angle at which the repair laser light reflected from the micromirror in this state is projected onto the work W10 on the stage 116. The off angle is the repair laser light reflected from the micromirror in this state. It is an angle irradiated to a laser damper, such as a light shielding member, an absorption member, etc. which are provided in addition to an optical path as unnecessary light. Therefore, it is possible to control the cross-sectional shape of the repair laser beam projected on the workpiece W10 by switching the reflection angle of each of the micromirrors arranged in the two-dimensional array shape to either one of an on angle and an off angle. Switching of an on angle and an off angle is controlled based on the mask image mentioned later. Thereby, it becomes possible to adjust the cross-sectional shape of the repair laser light from the laser light source 121 to the shape of a repair pattern (irradiation part mentioned later), and to irradiate the workpiece | work W10. The repair pattern is a repair pattern for irradiating a repair laser light in addition to the normal wiring pattern. For example, when repairing a defect such as a pattern removal failure, the repairing pattern is turned off at a fine mirror corresponding to an area such as normal wiring in the short region. It is set as the pattern which made the micromirror corresponding to the area | region other than that at the on angle.

The repair pattern may be set in accordance with the normal wiring pattern as described above, or in accordance with the defect shape. In this case, the cross-sectional shape of the repair laser light may be adjusted to the defect shape, and the micromirror corresponding to the defect area may be an on angle, and the micromirror corresponding to an area other than the defect area may be an off angle.

The area setting unit 103 controls the reflection angle of the micromirrors of the micromirror array 123 in accordance with the repair pattern (mask image) input from the control unit 101, thereby converting the cross-sectional shape of the repair laser light into the shape of the repair pattern. To control.

As described above, the control unit 101 implements the defect correction method according to the first embodiment by executing various programs and parameters read from the storage unit 107, and simultaneously controls each unit in the laser processing apparatus 100. To control. Here, the defect correction method performed by the control unit 101 will be described in detail with reference to the drawings. 3 is a flowchart showing a schematic flow of a defect correction method including laser processing performed by the laser processing apparatus according to the present embodiment. In addition, in the following description, it demonstrates as each addition operation | movement under control of the control part 101. FIG.

First, the control part 101 acquires defect position information which is the coordinate of the defect specified by the external inspection means (step S101). After acquiring defect position information, the stage control part 104 moves the stage 116 to a defect position so that a defect may be contained in the visual field area of the objective lens M15 (step S102). After the movement to the defect position of the stage 116, the CCD 111 picks up an image of the field of view of this objective lens M15 and outputs it as an image signal (step S103). The image signal output by the CCD 111 is received by the image processing unit 102 (step S104).

When the image signal is received by the image processing unit 102, the extraction unit 102a extracts the position along the field of view imaged from the reference image (normal pattern image) stored in advance. The matching unit 102b matches the reference image extracted by the extraction unit 102a with an image according to the received image signal. Then, the extraction part 102a extracts the defect area | region in an image based on the comparison result by the matching part 102b (step S105).

In this matching process, a matching score, which is the degree of matching (fitting degree, matching ratio) between the picked-up image and the reference image, is calculated based on the ratio of the white area in the image and the like. Based on the comparison result by this matching section 102b, it is determined to which position in the reference image the captured image corresponds.

For example, as shown in FIG. 4, the predetermined pattern P is formed in the picked-up image Da in the visual field area of the objective lens M15, and arbitrary adjacent patterns P are shown. The defect G3 exists in the liver. At this time, when the reference image determined based on the comparison result by the matching unit 102b is the reference image Dr shown in FIG. 5, the extraction unit 102a is based on the picked-up image Da and the reference image Dr. ), The defect region Gd as shown in FIG. 6 is extracted, and the extracted image Ds including the defect region Gd is output by the image processing unit 102 as an image signal.

The control unit 101 determines whether or not defect correction needs to be performed based on the defect area extracted by the extraction unit 102a (step S106). Here, when the control part 101 determines that it is not necessary to perform a defect correction based on the extracted defect area (step S106: No), it progresses to step S107 and acquires next defect position information, and acquires the stage control part ( The stage 116 is moved by driving 104. Thereafter, the control unit 101 returns to step S103 to cause the CCD 111 to perform the imaging process at the next defective position.

On the other hand, when the control unit 101 determines that the defect correction needs to be performed based on the extracted defect region (step S106: YES), the control unit 101 proceeds to step S108 to be subjected to exposure by laser light. It is determined whether or not there is a plurality. Here, when the control part 101 determines that the exposure object by a laser beam is not plural (step S108: no), it will transfer to step S109 and will switch the objective lens M15 as an objective lens (high magnification objective lens) for laser processing. do.

Thereafter, the CCD 111 picks up an image of the field of view of the objective lens M15 (laser processing objective lens) and outputs it as an image signal, and the output image signal is received by the image processing unit 102 (step S110). ). When the image signal is received by the image processing unit 102, the extraction unit 102a extracts the defect area in the image based on the comparison result by the matching unit 102b for this image (step S111). .

When extraction of the defect area | region by the objective lens for laser processing is complete | finished by step S111, the mask generation part 102c produces the mask information containing a mask image at least. For example, according to the pattern P of the reference image Dr shown in FIG. 5, a mask image is made into the irradiation part (region controlled by an on angle) which irradiates a laser beam other than the pattern P. And mask information including a mask image in which the formation region of the pattern P is a non-irradiation portion (other portions other than the irradiation portion, the area controlled by the off angle) to which the laser light is not irradiated. In addition to the mask image, the mask information includes instruction information for controlling on and off angles of the micromirrors of the micromirror array 123 (DMD 123).

When the mask image generation process in step S112 ends, the area setting unit 103 controls the reflection angle of the micromirrors of the micromirror array 123 in accordance with the mask image input from the control unit 101, thereby repairing the laser beam. The cross-sectional shape of the light is controlled to the shape of the repair pattern (step S113). Thereafter, the laser light source 121 is turned on to irradiate the laser beam forming the cross-sectional shape according to the mask image to the workpiece W10 to be inspected (step S114).

At this time, the mask generation unit 102c may control to generate a mask image having an irradiation unit in accordance with the shape of the defect area Gd and to irradiate a laser beam having a cross-sectional shape along the defect area Gd. In this case, in each micromirror M of the micromirror array 123, when the micromirror controlled by an on angle is displayed on a net, the on-angle control area | region Gm as shown in FIG. 7 is formed. Each micromirror M controlled in this way can irradiate the laser beam of cross-sectional shape along the defect area | region Gd (defect G3).

After laser irradiation, the CCD 111 picks up an image of the field of view of the objective lens for laser processing after laser light irradiation and outputs it as an image signal, and the output image signal is received by the image processing unit 102 (step S115). The control unit 101 determines whether or not defect correction (repair) is completed by matching processing or the like based on the image of the received image signal (step S116).

Here, when it determines with the completion of a repair in the image after laser light irradiation (step S116: Yes), the control part 101 complete | finishes a defect correction process. In addition, if it is determined that the repair is not completed in the image after the laser light irradiation (step S116: No), the control unit 101 proceeds to step S110 to allow the image signal to be received again to perform the laser irradiation process.

On the other hand, when the control unit 101 determines that the number of exposures by the laser light is plural (the object of plural exposures) with respect to one reference image to be irradiated (step S108: YES), the control proceeds to step S117, and the laser The objective lens M15 is switched as the processing objective lens (high magnification objective lens). Here, as a judgment of whether it is the object of multiple exposure, for example, the extracted defect area | region has the shape which needs a defect correction process, and the processed surface of the workpiece | work W10 or the workpiece | work W10 has heat conductivity or heat absorption rate, for example. The case of a material with high or low specific heat, or the area | region set as the laser beam non-irradiation part, or the case including the pattern which may influence the heat mentioned above are mentioned.

After switching the objective lens M15, the CCD 111 picks up an image of the field of view area of the objective lens M15 (laser processing objective lens) and outputs it as an image signal, and the output image signal is the image processing unit 102. Is accepted (step S118). If the image signal is received by the image processing unit 102, the extraction unit 102a extracts the defect area in the image based on the comparison result by the matching unit 102b for this image (step S119). .

When the extraction of the defective area by the laser processing objective lens is finished in step S119, centering of the defective area in the image is performed (step S120), and the mask generating unit 102c generates mask information including the mask image ( Step S121). When there are a plurality of exposure targets by laser light, a plurality of mask images are also generated for one reference image.

For example, the reference image corresponding to the picked-up image including the defect area is referred to as reference image Dr1 shown in FIG. 8. In the reference image Dr1, a plurality of pattern portions P1 to P3 are formed in the pattern formation region Ps. Each of the pattern portions P1 to P3 is arranged in the order of the pattern portion P1, the pattern portion P3, and the pattern portion P2 from the left side of the sheet in the pattern formation region Ps. In addition, in this reference image Dr1, it demonstrates as pattern parts P1-P3 as a laser light irradiation area.

Here, the distance d1 between the pattern portion P1 and the pattern portion P3, and the distance d2 between the pattern portion P2 and the pattern portion P3 are the heat energy curves L2 described above, respectively. May be affected by heat (see FIG. 24C). For this reason, the mask generation part 102c produces | generates the 1st and 2nd mask information, respectively containing the some mask image (1st mask image, 2nd mask image) for avoiding the influence by a heat | fever. These first and second mask images become the same pattern as the pattern of the reference image Dr1 as a whole. The distance that can be affected by heat includes the intensity of the laser light, the energy of the laser irradiation, the size of the irradiation, the width of the pattern portion, the thermal conductivity of the material used to form the pattern (material of the processing surface, the pattern forming material), and the heat absorption rate. , Specific heat, film thickness, density, and the like. As a distance for avoiding the influence by heat, it is set to 3 micrometers or more, for example. Here, the material of a process surface may be a single layer which consists of one type of material, and the multilayer which laminated | stacked several different materials may be sufficient as it. In addition, when a process surface forms a multilayer, it is preferable to consider the said characteristic in each material.

FIG. 9: is a schematic diagram which shows the 1st mask image Dm1a produced | generated by the laser processing apparatus 100 which concerns on this embodiment. The first mask image Dm1a is irradiated with laser light at a position corresponding to the pattern portions P1 and P2 in the mask pattern formation region Pms along the pattern formation region Ps of the reference image Dr1. Irradiation portions Pm1 and Pm2 are formed. Here, when there are a plurality of irradiation portions in the mask image, such as the irradiation portions Pm1 and Pm2, the distance d3 between the irradiation portions Pm1 and Pm2 is a distance which is not affected by heat as the heat energy curve L2 described above. .

FIG. 10: is a schematic diagram which shows the 2nd mask image Dm1b produced | generated by the laser processing apparatus 100 which concerns on this embodiment. The second mask image Dm1b is an irradiation unit to which laser light is irradiated to a position corresponding to the pattern portion P3 in the mask pattern formation region Pms along the pattern formation region Ps of the reference image Dr1. (Pm3) is formed.

When the process of generating the first and second mask information in step S121 ends, the area setting unit 103 firstly performs the micromirror array 123 in accordance with the first mask image Dm1a input from the control unit 101. By controlling the reflection angles of the micromirrors, the cross-sectional shape of the repair laser light is controlled to the shape of the repair pattern (step S122). After that, by turning on the laser light source 121, the laser light having a cross-sectional shape along the irradiation portions Pm1 and Pm2 of the mask image is irradiated to the workpiece W10 to be inspected (step S123).

Thereafter, the reflection angles of the micromirrors of the micromirror array 123 are controlled in accordance with the second mask image Dm1b input from the control unit 101, thereby controlling the cross-sectional shape of the repair laser light in the shape of the repair pattern (step). S124). After that, the laser light source 121 is turned on to irradiate the laser beam having a cross-sectional shape along the irradiation part Pm3 of the mask image to the workpiece W10 to be inspected (step S125).

After laser irradiation by a plurality of mask information, the CCD 111 picks up an image of the field of view area of the objective lens for laser processing after laser light irradiation and outputs it as an image signal, and the output image signal is received by the image processing unit 102. (Step S126). The control unit 101 determines whether or not defect correction (repair) is completed by matching processing or the like based on the image of the received image signal (step S127).

Here, when it determines with the completion of a repair in the image after laser light irradiation (step S127: YES), the control part 101 complete | finishes a defect correction process. In addition, if it is determined that the repair has not been completed in the image after the laser light irradiation (step S127: No), the control unit 101 proceeds to step S118 to allow the image signal to be received again to perform the laser irradiation process.

11-15 is a schematic diagram which shows an example of the defect correction process of the laser processing apparatus 100 which concerns on this embodiment. Specifically, the above-described steps S110 to S114 and S118 to S125 are subjected to defect correction processing as shown in the schematic diagram shown in FIGS. 11 to 15 as an example. As shown in FIG. 11, the pattern part P4 which has a substantially convex shape, and the pattern part P5 which has a concave part accommodating the protrusion part of the pattern P4 is formed, and the pattern P4 The defect G4 exists in the area | region containing the protrusion part and the recessed part of the pattern part P5.

With respect to the defect G4 shown in FIG. 11, the mask pattern formation area | region Pms1 (corresponding to steps S117-S127) which performs a some exposure process is set, and in parts other than this mask pattern formation area Pms1, A mask image along the pattern portion P5 is generated to irradiate laser light (see FIG. 12).

By the laser light irradiation process shown in FIG. 12, the defect G4 of parts other than the mask pattern formation area Pms1 is removed, and the defect G4a remains in the mask pattern formation area Pms1 (FIG. 13). On the other hand, the mask pattern formation area | region Pms2 (corresponding to step S117-S127) which can be influenced by heat by the space | interval of a pattern is set, and the pattern part P4 in parts other than this mask pattern formation area Pms2 is set. And a first mask image according to P5), and irradiates laser light (see FIG. 13).

Thereafter, a second mask image along the pattern portions P4 and P5 is generated for the defect G4b remaining between the pattern portions P4 and P5 and irradiated with laser light (see FIG. 14). Thereby, the pattern parts P4 and P5 from which the defect G4 was removed can be obtained (refer FIG. 15).

By the laser processing described above, even when the arrangement of the pattern portion can be affected by the heat of the laser light, the laser processing can be performed accurately. That is, this invention has the imaging part which acquires the image which expanded the part of the workpiece | work W10 in which the predetermined | prescribed pattern was formed, and irradiates a laser beam to the workpiece | work W10 using the image which the imaging part acquired, and the workpiece | work W10 is carried out. It is a laser processing method of correcting the defect of an image, and the stage which mounts the workpiece | work W10 and moves relatively with respect to an imaging part on the plane parallel to the plate surface of the workpiece | work W10 to the defect correction position which correct | amends a process It moves (stage movement step: S102), and image | photographs the image of the workpiece | work W10 at the moved defect correction position (imaging step: step S118), compares the picked-up captured image and a reference image, and determines by this comparison The irradiation part which irradiates a laser beam based on this is formed, and the mask image which makes another part into the non-irradiation part which is an area | region to which a laser light is not irradiated is produced | generated based on a reference image (mask creation First step: Step S121) includes shaping the light beam cross-sectional shape of the laser light from the laser light source into a shape according to the mask image (beam shaping steps: S122, S124), wherein the mask generating step includes: In the case of having a plurality of corresponding patterns, a plurality of mask images are generated such that the distance between each irradiation section on the mask image is equal to or greater than a predetermined distance, and not all steps in FIG. 3 are required as a technical solution of the present invention.

According to the embodiment described above, a plurality of mask information according to the arrangement of the pattern portion of the laser light irradiation target is generated for one reference image, and the laser light constituting the cross-sectional shape according to each mask image is irradiated. Laser processing can be performed correctly irrespective of arrangement | positioning of several pattern part. Thereby, even if a pattern part is fine, the fine processing by a laser is attained. Moreover, even when using the laser beam of the wavelength range more than near-ultraviolet light, laser processing can be performed without the processing precision of the pattern shape to be processed being reduced.

In addition, as a conventional technique, a method using a ultraviolet ray (wavelength 266 nm) is mentioned as a defect correction method without the influence of heat. In this method, the micromirror array 123 (DMD 123) is replaced with an ultraviolet ray-compatible one. It is necessary to design in consideration of the influence on the apparatus and the irradiation target, such as increase in cost and deterioration of DMD by this wavelength (266 nm) by this substitution.

16 and 17 are schematic diagrams each showing first and second mask images generated by the laser processing apparatus according to Modification Example 1 of the present embodiment. In addition, the 1st and 2nd mask image which concerns on the modification 1 respond | corresponds to the reference image Dr1 shown in FIG. 8 as a whole, and it demonstrates as irradiating a laser beam with respect to the pattern parts P1-P3. Although the above-mentioned embodiment demonstrated that the irradiation part which forms substantially the same shape as a pattern part is formed according to each pattern part, but forms the irradiation part in the divided area | region so that the shape of a pattern part may be divided | divided so that it may become more than predetermined distance. It may be.

In the first mask image Dm2a illustrated in FIG. 16, irradiation portions Pm1a, Pm2a, and Pm3a that divide the pattern portions P1 to P3 of FIG. 8 along the longitudinal direction are formed. Here, in the modification 1, the relative position of irradiation part Pm1a, Pm2a, Pm3a with respect to each pattern part P1-P3 is the same.

In addition, in the second mask image Dm2b illustrated in FIG. 17, similar to the irradiation units Pm1a, Pm2a, and Pm3a, the irradiation units Pm1b and Pm2b which divide the pattern portions P1 to P3 of FIG. 8 along the length direction. , Pm3b) is formed. Here, the relative positions of the irradiation portions Pm1b, Pm2b, and Pm3b with respect to the pattern portions P1 to P3 are the same, respectively, and are disposed on the opposite side to the irradiation portions Pm1a, Pm2a, and Pm3a with respect to the pattern portions P1 to P3. .

At this time, the distance d4 between the irradiation part Pm1a and the irradiation part Pm3a, the distance d5 between the irradiation part Pm2a and the irradiation part Pm3a, and the distance between the irradiation part Pm1b and the irradiation part Pm3b. (d6), the distance d7 between the irradiation part Pm2b and the irradiation part Pm3b becomes more than the predetermined distance without the influence of a heat | fever. Thereby, by irradiating laser light step-by-step using a 1st and 2nd mask image like embodiment mentioned above, laser processing can be performed correctly irrespective of arrangement | positioning of several pattern part.

18 and 19 are schematic diagrams each showing first and second mask images generated by the laser processing apparatus according to Modification Example 2 of the present embodiment. The first and second mask images according to the second modified example correspond to the reference image Dr1 shown in FIG. 8 as a whole in the first modified example, and irradiate laser light to the pattern portions P1 to P3. It demonstrates as a thing.

As for the 1st mask image Dm3a shown in FIG. 18, the irradiation part Pm1c, Pm1d, Pm1e is formed in the thinning position by dividing the pattern part P1 of FIG. 8 along the longitudinal direction, respectively. Similarly, the irradiation portions Pm2c, Pm2d, and Pm2e are formed at the same interval with respect to the pattern portion P2, and the irradiation portions Pm3c, Pm3d are formed at the same interval with respect to the pattern portion P3. Here, the irradiation units Pm3c and Pm3d are disposed at positions not adjacent to the irradiation units Pm1c, Pm1d and Pm1e and the irradiation units Pm3c and Pm3d in order to secure the distance to the irradiation units of the adjacent pattern portions.

Further, in the second mask image Dm3b illustrated in FIG. 19, the irradiation portions Pm1f and Pm1g are formed at positions where the irradiation portions Pm1c, Pm1d, and Pm1e of the pattern portion P1 divided into five portions are not disposed. Similarly, irradiation parts Pm2f and Pm2g are formed with respect to pattern part P2. About the pattern part P3, irradiation part Pm3e, Pm3f, Pm3g is formed in the position opposite to pattern part P1, P2 in the position in which irradiation part Pm3c, Pm3d is not arrange | positioned.

At this time, the space | interval (relative distance) of each irradiation part becomes more than predetermined distance, respectively without influence of a heat | fever. Thereby, like the embodiment mentioned above, laser processing can be performed correctly regardless of arrangement | positioning of several pattern part.

FIG. 20: is a schematic diagram which shows an example of the reference image memorize | stored from the memory | storage part of the laser processing apparatus which concerns on the modification 3 of this embodiment. 21 and 22 are schematic diagrams each showing first and second mask images generated by the laser processing apparatus according to Modification Example 3 of the present embodiment. In addition, the 1st and 2nd mask image which concerns on the modification 3 irradiates a laser beam to the pattern part P6 which forms L shape corresponding to the pattern of the reference image Dr2 shown in FIG. 20 as a whole. Explain.

The irradiation part Pm4a is formed in the 1st mask image Dm4a shown in FIG. 21 in the position corresponding to one linear part of L-shape of the pattern part P6 of FIG. In addition, the irradiation part Pm4b is formed in the 2nd mask image Dm4b shown in FIG. 22 in the position corresponding to the other linear part of L-shape of the pattern part P6 of FIG.

As described above, when an angle of 90 degrees or less exists in a pattern such as an L shape, the angle of the pattern can be formed more precisely by dividing and irradiating like the irradiation portions Pm4a and Pm4b.

In addition, embodiment mentioned above and the modified example are only the examples for implementing this invention, This invention is not limited to these, It is within the scope of this invention to variously change according to specification, etc. Moreover, this invention It is apparent from the above description that other various embodiments are possible within the scope of. For example, the modifications suitably illustrated for each embodiment can also be applied to the other embodiments.

For example, the laser processing apparatus 100 of embodiment mentioned above comprises the stage 116 which can move in an XY plane, and the stage control part 104 which controls the horizontal movement of the stage 116, and the stage ( Although the workpiece | work W10 is moved in XY plane by 116, even if it is set as the structure which fixes the workpiece | work W10 on a stage and moves the microscope part 110 and the laser repair head 120 in an XY plane. good. That is, the movement means which changes the relative position of the microscope part 110, the laser repair head 120, and the workpiece | work W10, and the movement control part which controls this movement means include any structure.

In addition, although the micromirror array 123 which is a spatial light modulator is used as a beam shaping means in the above-mentioned embodiment, you may make it the structure which uses a variable slit, a liquid crystal shutter, etc. as other beam shaping means. In other words, any configuration is included as long as the beam shaping means forms the cross-sectional shape of the laser beam in a desired shape.

In addition, although the above-mentioned embodiment showed the example of the defect correction apparatus which has a defect correction part which irradiates a laser beam with respect to a defect, and performs a defect repair, it is not limited to the defect correction part using such a laser light, for example, Defect correction (generally, coating correction) or a method of repairing defects by applying, drawing, or transferring correction materials to defects, such as a method using a probe such as a dispenser or a needle, an inkjet method, a transfer method, or the like. For example, you may substitute by the defect correction part which cut | disconnects, ablates, and shapes a defect with probes, such as a needle. In this case, the repair processing (repairing) in the laser processing method and the laser processing program of the above embodiment is replaced by, for example, the processing by coating, drawing, or transferring a quartz material in the repair processing by laser irradiation. The laser processing method and the laser processing program which are common to various laser processing apparatuses can be made.

As mentioned above, the computer-readable recording medium which recorded the laser processing apparatus, the defect correction method, and the defect correction program which concerns on this invention is useful for performing laser processing correctly irrespective of arrangement | positioning of several irradiation pattern.

100: laser processing device
101:
102: image processing unit
102a: extraction unit
102b: matching part
102c: mask generator
103: area setting unit
104: stage control unit
105:
106: input unit
107: memory
110: microscope unit
111: imaging device
112: light source
116: stage
120: laser repair head
121: laser light source
122: LED
123: micro mirror array (DMD)
Da, Da100: captured image
Dr, Dr1, Dr2: reference picture
Ds: Defective burn
Dm1a, Dm2a, Dm3a, Dm4a: First Mask Image
Dm1b, Dm2b, Dm3b, Dm4b: Second Mask Image
P1 ~ P6: Pattern part
Pm1, Pm2, Pm1a-Pm1g, Pm2a-Pm2g, Pm3a-Pm3g, Pm4a, Pm4b: Irradiation part

Claims (7)

A laser processing apparatus for irradiating laser light to a substrate on which a predetermined pattern is formed to perform a correction process for defects on the substrate,
A stage movable relative to the imaging unit which mounts the substrate and acquires an image in which part of the substrate is enlarged;
A stage control unit which controls the movement of the stage and moves the stage to a defect correction position that performs the correction process;
A matching unit for comparing the captured image picked up at the defect correction position moved by the stage movement by the stage control unit with the reference image which is a normal pattern;
Based on the said reference image, the mask image which makes the area | region which irradiates a laser beam based on the determination by the said matching part, and makes the other part the non-irradiation part the area | region which is not irradiated with a laser beam based on the said reference image as a whole A mask generator for generating a plurality of patterns so as to have the same pattern as the image;
Beam shaping means for shaping the cross-sectional shape of the beam of laser light from the laser light source into a shape according to the mask image
And,
And the mask generating unit generates a mask image so that the distance between each irradiating unit is equal to or greater than a predetermined distance when the mask generating unit has a plurality of the irradiating units in the mask image. The method of claim 1,
The beam shaping means includes a two-dimensional modulation element. 3. The method according to claim 1 or 2,
And the mask generating unit generates a mask image based on thermal conductivity, heat absorption rate, specific heat, film thickness, density, energy of laser irradiation, and irradiation size on the substrate or the laser processing surface. The method of claim 1,
And an extraction unit for extracting a defect area existing at the defect correction position,
And the mask generating unit forms an irradiation unit corresponding to the defect area. The method of claim 1,
And said mask generating part divides the area | region which irradiates the said laser light, and forms irradiation part in the division | segmentation area so that it may become more than the said predetermined distance, respectively. As a laser processing method of irradiating laser light to a substrate on which a predetermined pattern is formed, and correcting a defect on the substrate,
A stage movement step of moving the stage on which the substrate is placed to a defect correction position that performs the correction process;
An imaging step of picking up an image of the substrate at the defect correction position moved by the stage moving step;
A matching step of comparing the captured image picked up by the imaging step with a reference image which is a normal pattern;
Based on the said reference image, the mask image which makes the area | region which irradiates a laser beam based on the determination by the said matching step, and makes the other part the non-irradiation part the area | region where laser light is not irradiated is based on the said reference image as a whole A mask generation step of generating a plurality of patterns so as to have the same pattern as the image,
Luminous flux shaping step of shaping the cross-sectional shape of the luminous flux of the laser light from the laser light source into the shape according to the mask image
/ RTI >
The said mask generation step produces | generates a mask image so that the distance between each irradiation part may become more than a predetermined distance, when it has two or more said irradiation parts in the said mask image. A computer-readable recording medium having a laser processing program recorded thereon for irradiating laser light to a substrate on which a predetermined pattern is formed to cause a computer to perform a correction process for defects on the substrate,
A stage movement procedure for moving the stage on which the substrate is placed to a defect correction position for performing the correction process;
An imaging procedure for imaging an image of the substrate at the defect correction position moved by the stage movement procedure,
A matching procedure for comparing the picked-up image picked up by the pick-up procedure with a reference image that is a normal pattern;
Based on the reference image, the mask image having the area irradiated with the laser light as the irradiating part and the other part as the non-irradiating part as the non-irradiating part based on the determination by the matching procedure is referred to as a whole. A mask generation procedure for generating a plurality of patterns so as to have the same pattern as the image;
Beam shaping procedure for shaping the cross-sectional shape of the beam of laser light from the laser light source into a shape according to the mask image
/ RTI >
The mask generating procedure is a computer-readable recording medium having a laser processing program recorded thereon, wherein the mask generation procedure generates a mask image such that the distance between each irradiation section is equal to or larger than a predetermined distance when the mask image has a plurality of irradiation sections.

Images